TW546752B

TW546752B - Nozzle plate structure at wafer stage and the fabrication method thereof

Info

Publication number: TW546752B
Application number: TW91113778A
Authority: TW
Inventors: Ching-Yu Chou; Chang-Mou Yang
Original assignee: Nano Dynamics Inc
Priority date: 2002-06-24
Filing date: 2002-06-24
Publication date: 2003-08-11

Abstract

A nozzle plate structure at wafer stage is disclosed, which includes a silicon substrate having an actuating device, a photoresist film formed on the surface of the silicon substrate; a first opening formed inside the photoresist film to expose the surface of the actuating device for serving as an inkjet chamber; a first metal layer is formed on the surface of the photoresist film; a second metal layer formed on the surface of the first metal layer; and a second opening penetrating through the second metal layer and the first metal layer and located on top of the first opening for use as a nozzle orifice.

Description

546752 五、發明說明（1) 【發明領域】本發明係有關於一種喷墨式列印頭晶粒（i nk j e t Print head chip)之喷孑L片（nozzle plate)白勺製作方〉去，特別有關於一種採用晶圓階段製程以製作喷孔片的方法及其噴孑L片結構。【發明背景】在電腦列印設備之主流產品中，噴墨印表機之列印技術係將精確體積的微量墨水液滴，快速地以電腦數值驅動放置於精確的特定位置，不但可提供高解析度、全彩的圖片輸出，還可滿足電子工業製造技術對自動化、微小化、降低成本、降低時程、減少環境的衝擊等的要求與趨勢。其中一種已經被成功地商業化的熱感應喷墨式列印頭晶粒 (thermal ink j et print head chi p)，其原理乃利用加熱杰將墨水瞬間氣化’再藉由產生的高壓氣泡推動墨水，進而使墨水經由喷孔（nozzle orifice)射出以列印在紙張上。噴墨式列印技術之品質主要取決於噴孔的物理特性，如· '"Μ孔之底切輪廓與開口形狀，這會影響到墨水液滴之體積、執道、噴射速度等等。早期技術係採用$板印刷電鑄（1 i thographic electroforming)製程或是其他電化學加工成型方法，以製作成一種金屬喷孔片，然後將此金\ 喷孔片粘著至列印頭晶粒上。然而，這種電鏟“胃以下缺點：第…金屬喷孔片與下方之高分546752 V. Description of the invention (1) [Field of the invention] The present invention relates to a method for manufacturing a nozzle plate for an ink jet print head chip. In particular, it relates to a method for manufacturing a nozzle plate using a wafer stage process and a structure for spraying L-pieces. [Background of the Invention] Among the mainstream products of computer printing equipment, the printing technology of inkjet printers is to place a precise volume of ink droplets in a precise and specific position with a computer numerical drive, which can not only provide high Resolution and full-color picture output can also meet the requirements and trends of electronics industry manufacturing technology for automation, miniaturization, cost reduction, time reduction, and environmental impact. One of the thermal inkjet print head chips that has been successfully commercialized is based on the principle that the ink is instantaneously vaporized by heating and then pushed by the generated high-pressure bubbles The ink is further ejected through a nozzle orifice to be printed on the paper. The quality of inkjet printing technology mainly depends on the physical characteristics of the nozzle holes, such as the undercut contour and opening shape of the “M” holes, which will affect the volume, execution, and ejection speed of ink droplets. The early technology used a 1 ithographic electroforming process or other electrochemical processing to form a metal orifice plate, and then stuck this gold \ orifice plate to the print head grain on. However, this kind of electric shovel "stomach has the following disadvantages: the first ...

546752 五、發明說明（2) 性不佳，因此戶彳不佳。弟二，不度、對準問題；到限制；第四，五，易發生墨水面上電每金（Au) 了解決上述問題 laser)處理方式 (mi sa 1 ignment ) 有鑑於此，發一種新的噴孑匕成本以及提高噴能提供易精確第三，枉成腐敍喷以延緩 ’現今來製作、設備為了有片製程孔之圖之喷墨解析控制製程條喷孔的形狀本過高，不孔片之問題腐蝕現象，技術改採用喷孔，但是過於龐大與效提昇噴孔，以同時達案精確度等度有限，而件，如應力、尺寸等設敷大量生產 ’雖然可以但需耗費更準分子雷射這又會遭遇昂貴等問題片的製程品到簡化製程目的。且生產效能、電鑄厚計選擇性受之需求；第在喷孔片表多成本。為 (exc i mer 到對不準〇質，亟需開、降低製作【發明概要】本發明之方法，係採用層、微影、I虫片，則可以有及喷孔設計受本發明提主要目的在於提晶圓階段製程，刻等組合步驟，效解決習知粘著限等問題。出一種晶圓階段出一種喷孔片結構及其、塗佈上製作確度不藉由電鑄金屬層可直接於矽晶圓性不佳、圖案精底包含有一致動元件；一光阻上；一第一開口形成於光阻薄喷墨腔；二金屬層面，可以提供薄膜之表面上作為 ;一第製作之喷孔片結薄膜形成於矽基膜内，以暴露致一第一金屬層係係形成於第一金構。一底之表動元件形成於屬層之製作光阻噴孔佳以矽基面之表光阻表面546752 V. Description of the invention (2) Poor property, so poor households. Second, the problem of degree and alignment; to the limit; fourth, fifth, prone to electricity on the ink surface (Au) to solve the above problem, laser) processing method (mi sa 1 ignment) In view of this, a new The cost of the spray gun and the increase of the spray energy can provide easy and accurate third. The spraying of the rotten spray is delayed to delay the production of the inkjet analysis control process strip of the production process for the picture of the sheet process hole. The shape of the spray hole is too high. The problem of non-porous sheet corrosion phenomenon, the technology changed to the use of spray holes, but the nozzle is too large and effective to improve the accuracy of the same time to achieve the same limited accuracy, and parts, such as stress, size, etc. It takes more excimer lasers, which will encounter expensive and other problematic films, to simplify the process. And the production efficiency, electroforming thickness gauge is subject to the demand; the number of nozzles in the table is more cost. In order to make the excimer to be inaccurate, it is necessary to open and reduce the production. [Summary of the invention] The method of the present invention, which uses layers, lithography, and I worms, can be designed with nozzle holes. The purpose is to improve the wafer stage process, engraving and other combined steps to effectively solve problems such as the conventional adhesion limit. A wafer stage and a nozzle structure can be produced and the coating can be made without using an electroformed metal layer. Directly on a silicon wafer with poor performance and a patterned bottom including uniform moving elements; a photoresist; a first opening formed in the photoresist thin inkjet cavity; two metal layers, which can be provided on the surface of the film as a first The fabricated nozzle hole junction film is formed in a silicon-based film to expose a first metal layer system formed on a first metal structure. A bottom surface of a moving element is formed on a metal layer. Surface photoresist surface

0741-7735TW(N);ND-P0045;Cherry.ptd 第5頁 546752 五、發明說明（3) 上；以及一第二開口係貫穿第二金屬層以及第一金屬層，且位於第一開口之上方，以提供作為一喷孔。本發明之苐一種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該石夕基底之表面形成一光阻薄膜，其中藉由光罩作選擇區域之曝光可使該光阻薄膜形成一未交聯區以及一交聯區，且該未交聯區係位於該致動元件上方；進行濺鍍或蒸鍍製程，以於該光阻薄膜之表面上形成一第一金屬層；進行電鎮製程，以於該第一金屬層表面上形成一第二金屬層；於該第二金屬層之表面上定義形成一光阻層，其中該光阻層包含有一開口，其位置包括該未交聯區上方之一部份或全部；以該光阻層為罩幕進行餘刻製程’將該開口下方之該第二金屬層以及該第一金屬層去除，以形成一喷孔；顯影去除該光阻層；以及顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。本發明之第二種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一矽基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中藉由光罩作選擇區域之曝光可使該光阻薄膜形成一未交聯區以及一交聯區，且該未交聯區係位於該致動元件上方；進行濺鍍或蒸鍍製程，以於該光阻薄膜之表面上形成一第一金屬層；於該第一金屬層之表面上定義形成一光阻層，其中該光阻層包含有一開口，其位置包括該未交聯區上方之一部份或全部；以該光阻層為罩幕進行蝕刻製程，將該開口下方之該0741-7735TW (N); ND-P0045; Cherry.ptd Page 5 546752 5. In the description of the invention (3); and a second opening penetrates the second metal layer and the first metal layer and is located in the first opening The top is provided as a spray hole. According to the invention, a method for fabricating an orifice plate at a wafer stage includes the following steps: providing a Shi Xi substrate with a uniform moving element on its surface; and forming a photoresist film on the surface of the Shi Xi substrate, wherein The exposure of the photomask as a selected area can make the photoresist film form an uncrosslinked area and a crosslinked area, and the uncrosslinked area is located above the actuating element; a sputtering or vapor deposition process is performed on the Forming a first metal layer on the surface of the photoresist film; performing an electric ballasting process to form a second metal layer on the surface of the first metal layer; defining a photoresist layer on the surface of the second metal layer, Wherein, the photoresist layer includes an opening, and its position includes a part or all of the area above the uncrosslinked region. The photoresist layer is used as a mask to perform a post-cut process. The second metal layer below the opening and the The first metal layer is removed to form a spray hole; the photoresist layer is removed by development; and the uncrosslinked area of the photoresist film is removed by development to form an inkjet cavity in the photoresist film. The method for manufacturing a nozzle plate of the second wafer stage of the present invention includes the following steps: providing a silicon substrate with a uniformly moving element on its surface; and forming a photoresist film on the surface of the silicon substrate, wherein The exposure of the photomask as a selected area can make the photoresist film form an uncrosslinked area and a crosslinked area, and the uncrosslinked area is located above the actuating element; a sputtering or vapor deposition process is performed on the A first metal layer is formed on the surface of the photoresist film; a photoresist layer is defined on the surface of the first metal layer, wherein the photoresist layer includes an opening and its position includes a portion above the uncrosslinked region Or all; using the photoresist layer as a mask to perform an etching process, the

0741-7735TWF(N);ND-P0045;Cherry.ptd 第6頁 546752 五、發明說明（4) 第一金屬層去除，以形成一孔洞；顯影去除該光阻層；進行電鱗製程，以於該第一金屬層表面上形成一第二金屬層，貝ιΐ該第二金屬層以及該第一金屬層内形成一喷孔；顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。本發明之第三種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一矽基底，其表面上包含有一致動元件；於該石夕基底之表面形成一光阻薄膜，其中藉由光罩作選擇區域之曝光可使該光阻薄膜形成一未交聯區以及一交聯區，且該未交聯區係位於該致動元件上方；進行濺鍍或蒸鍍製程，以於該光阻薄膜之表面上形成一第一金屬層；於該第一金屬層之表面上定義形成一光阻層，其中該光阻層之位置包括該未交聯區上方之一部份或全部；進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層；選擇性研磨該第二金屬層，直至使該第二金屬層到預定喷孔片之厚度；顯影去除該光阻層，以於第二金屬層内形成一孔洞；以該第二金屬層為罩幕進行蝕刻製程，將該孔洞下方之該第一金屬層去除，則可於該第二金屬層以及該第一金屬層内形成一喷孔；以及顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一噴墨腔。本發明之第四種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一矽基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中藉由光罩作選擇區域之曝光可使該光阻薄膜形成一未交聯區以及一交聯0741-7735TWF (N); ND-P0045; Cherry.ptd Page 6 546752 V. Description of the invention (4) The first metal layer is removed to form a hole; the photoresist layer is removed by development; an electric scale process is performed to A second metal layer is formed on the surface of the first metal layer, and the second metal layer and a spray hole are formed in the first metal layer; the uncrosslinked area of the photoresist film is removed by development to make the photoresist An ink-jet cavity is formed in the film. The method for manufacturing a nozzle plate of the third wafer stage of the present invention includes the following steps: providing a silicon substrate with a uniformly moving element on its surface; forming a photoresist film on the surface of the stone substrate, wherein The exposure of the selected area by the photomask can make the photoresist film form an uncrosslinked area and a crosslinked area, and the uncrosslinked area is located above the actuating element; a sputtering or evaporation process is performed to A first metal layer is formed on the surface of the photoresist film; a photoresist layer is defined on the surface of the first metal layer, and the position of the photoresist layer includes a part or all of the area above the uncrosslinked area. Performing an electroforming process to form a second metal layer on the surface of the first metal layer; selectively grinding the second metal layer until the second metal layer reaches a thickness of a predetermined orifice plate; developing to remove the light A barrier layer to form a hole in the second metal layer; using the second metal layer as a mask to perform an etching process, and removing the first metal layer below the hole, the second metal layer and the first metal layer can be removed. A spray is formed in a metal layer Holes; and developing to remove uncrosslinked areas of the photoresist film to form an inkjet cavity in the photoresist film. The fourth method for manufacturing a nozzle plate in the wafer stage of the present invention includes the following steps: providing a silicon substrate with a uniformly moving element on its surface; forming a photoresist film on the surface of the silicon substrate, wherein Exposure of the photomask as a selected area can form the photoresist film into an uncrosslinked area and a crosslinked

0741-7735TW(N);ND-P0045;Cherry.ptd 第7頁 546752 五、發明說明（5) 區，且該未交聯區係位於該致動元件上方；於該光阻薄膜之表面上定義形成一光阻層，其中該光阻層之位置包括該未交聯區上方之一部份或全部；進行濺鍍或蒸鍍製程，以於該光阻層與光阻薄膜之表面上形成一第一金屬層；進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層；進行選擇性研磨製程，將該光阻層上方之該第二金屬層以及該第一金屬層去除，並使該第二金屬層達到預定喷孔片之厚度；顯影去除該光阻層，以於第二金屬層以及該第一金屬層内形成*一喷孔；以及顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。本發明之第五〜八種晶圓階段之喷孔片的製作方法，係改良前述之第一〜四種方法，於製作完成該未交聯區之後，以顯影方式去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一噴墨腔，再於該矽基底之整個表面上形成一固態薄膜，以覆蓋該光阻薄膜以及該喷墨腔。後續之相關製程可於固態薄膜上進行，直至製作完成喷孔片，便可暴露該噴墨腔。根據上述目的，本發明之一特徵在於，採用光阻、微影、蝕刻等步驟於製作金屬喷孔片以及喷孔，其可精確控制喷孔之尺寸與位置，有助於提昇噴孔之積集度，且可提供極高解析度之喷墨品質。本發明之另一特徵在於，以濺鍍第一金屬層以及電鑄第二金屬層的方式製作喷孔片，可以有效解決習知喷孔片粘著性不佳的問題。0741-7735TW (N); ND-P0045; Cherry.ptd Page 7 546752 V. Description of the invention (5) area, and the uncrosslinked area is located above the actuating element; defined on the surface of the photoresist film Forming a photoresist layer, wherein the position of the photoresist layer includes a part or all of the area above the uncrosslinked area; and a sputtering or evaporation process is performed to form a photoresist layer and a surface of the photoresist film A first metal layer; an electroforming process to form a second metal layer on the surface of the first metal layer; a selective grinding process to perform the second metal layer above the photoresist layer and the first metal layer Removing and making the second metal layer reach the thickness of the predetermined nozzle hole sheet; developing and removing the photoresist layer to form * a nozzle hole in the second metal layer and the first metal layer; and developing and removing the photoresist film The uncrosslinked area is used to form an inkjet cavity in the photoresist film. The fifth to eight kinds of wafer orifice fabrication methods of the present invention are modified from the aforementioned first to fourth methods. After the uncrosslinked region is completed, the photoresist film is removed by development. The cross-linking area forms an inkjet cavity in the photoresist film, and then forms a solid film on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity. Subsequent related processes can be performed on the solid film until the nozzle plate is completed, and the inkjet cavity can be exposed. According to the above object, one feature of the present invention is that the steps of photoresist, lithography, etching, etc. are used to make metal nozzle holes and nozzle holes, which can accurately control the size and position of the nozzle holes and help improve the product Set, and can provide very high resolution inkjet quality. Another feature of the present invention is that making the nozzle plate by sputtering the first metal layer and electroforming the second metal layer can effectively solve the problem of poor adhesion of the conventional nozzle plate.

0741-7735TW(N);ND-P0045;Cherry.ptd 第8頁 546752 五、發明說明（6) 本發明之再一特徵在於，直接在晶圓上進行微影I虫刻製程，其製程簡易且成本低廉，符合商業化之大量生產需求。【發明之詳細說明】為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：【實施例說明】本發明提出一種喷孔片結構及其多種搭配製作方法，係採用晶圓階段製程，藉由電鑄金屬層、塗佈光阻層、微影、勒刻等組合步驟，可直接於晶圓上製作喷孔片。至於喷孔之數量、排列方式以及尺寸係屬於選擇設計，本發明之實施例並未力口以限定。此外，有關列印頭晶片之喷墨槽的製作，可於製作喷墨腔之前進行，或是在製作完成喷墨腔圖案之後進行。以下係以舉例說明於一個致動元件（例如：薄膜加熱器）上製作喷孔片之一個喷孔的結構。請參閱第1圖，其顯示本發明之喷孔片結構的剖面示意圖。一矽基底1 0，其可為晶粒型式或是晶圓型式，其表面上包含有至少一致動元件11 (例如：薄膜加熱器）、一光阻薄膜12、至少一第一金屬層16以及一第二金屬層18，其中光阻薄膜1 2是用作為一阻隔結構，而第一金屬層1 6與第二金屬層18是用作為一喷孔片。而且，光阻薄膜12内形0741-7735TW (N); ND-P0045; Cherry.ptd Page 8 546752 V. Description of the invention (6) Another feature of the present invention is that the lithography I insect engraving process is performed directly on the wafer. The process is simple and easy. The cost is low, which meets the needs of commercial mass production. [Detailed description of the invention] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments and the accompanying drawings for detailed description as follows: [Example Description] The present invention proposes an orifice plate structure and a variety of matching manufacturing methods, which adopt a wafer stage process, and can be directly combined with the crystal through the combined steps of electroforming metal layer, coating photoresist layer, lithography, and engraving. Make a nozzle plate on the circle. As for the number, arrangement, and size of the nozzle holes are selected designs, the embodiments of the present invention are not limited. In addition, the manufacture of the inkjet tank of the print head wafer can be performed before the inkjet cavity is produced, or after the inkjet cavity pattern is completed. The following is an example to illustrate the structure of a nozzle hole in an actuator element (for example, a thin film heater). Please refer to FIG. 1, which shows a schematic cross-sectional view of a nozzle plate structure of the present invention. A silicon substrate 10, which may be of a die type or a wafer type, and whose surface includes at least a uniform moving element 11 (such as a thin film heater), a photoresist film 12, at least a first metal layer 16 and A second metal layer 18, wherein the photoresist film 12 is used as a barrier structure, and the first metal layer 16 and the second metal layer 18 are used as an orifice plate. Moreover, the photoresist film 12 has an inner shape

0741-7735TW(N);ND-P0045;Cherry.ptd 第9頁 546752 五、發明說明（7) 1 成有一第一開口 1 4，係暴露致動元件丨丨之表面，以提供作為一喷墨腔。另外，第一金屬層16與第二金屬層18内形成有一第二開口 1 9，係位於第一開口丨4以及致動元件丨丨上方，可提供作為一噴孔。在^佳貫施例中，光阻薄膜丨2的材質係可選用具有感光性之高分子材料，例如：環氧樹脂（ep〇xy)、酚樹酯 (novolak)、丙烯酸脂（arcyUte)、聚醯亞胺 (poly imide)、聚醯胺（polyamide)、感光高分子 (photosensitive polymer)或是液態光阻材質，而依據搭配製程之需求，光阻薄膜12的材質特性係可選用水洗型^ 溶劑型。第一金屬層16係用來提供第二金屬層18與光阻膜1 2之間的枯著性，其厚度約為卜2微米，其材質可、琴用鎳、銅或其他與第二金屬層1 8之材料晶格匹配之金&，且第一金屬層1 6可製作成多層堆疊的結構，其製作方、而選用濺鍍、蒸鍍或電鑄。第二金屬層丨8係提供^孔去可要厚度及應力，其厚度可依據噴孔片之需求作、高者^之主其材質可選用鎳、銅或其他金屬，其製作方 ^田调整，鍍、蒸鍍或電鑄。 / σ選用濺以下係以多種製程變化說明本發明之喑只1匕片於曰向段製程的各種製作方法。〃、曰曰®階【第一實施例】请參閱弟2Α至2F圖，其顯示本發明第一给片於晶圓階段製程的剖面示意圖。首先，如笙 < T孔戈第2A圖所示，0741-7735TW (N); ND-P0045; Cherry.ptd Page 9 546752 V. Description of the invention (7) 1 has a first opening 1 4 which exposes the surface of the actuating element to provide an inkjet Cavity. In addition, a second opening 19 is formed in the first metal layer 16 and the second metal layer 18, which is located above the first opening 4 and the actuating element 丨, and can be provided as a spray hole. In the ^ Jiaguan embodiment, the material of the photoresist film 2 can be selected from photosensitive polymer materials, such as epoxy resin (epoxy), phenol resin (novolak), acrylic resin (arcyUte), Polyimide, polyamide, photosensitive polymer, or liquid photoresist material. Depending on the requirements of the manufacturing process, the material characteristics of the photoresist film 12 are optional. Washable type ^ Solvent-based. The first metal layer 16 is used to provide the bulkiness between the second metal layer 18 and the photoresist film 12, and its thickness is about 2 micrometers. The material can be nickel, copper or other metals The material of layer 18 is lattice-matched gold & and the first metal layer 16 can be made into a multi-layered stack structure. For the production method, sputtering, evaporation, or electroforming is selected. The second metal layer 丨 8 provides the thickness and stress of the holes. The thickness can be made according to the requirements of the nozzle plate. The master of the higher one can choose nickel, copper or other metals. , Plating, evaporation or electroforming. / σ Selective splashing The following is a description of the various manufacturing methods of the 1-knife Yu Xiang section of the present invention with various process variations.阶, Said ® Stage [First Embodiment] Please refer to Figures 2A to 2F, which show a schematic cross-sectional view of the first wafer of the present invention in the wafer stage process. First, as shown in Sheng < T Kongo Figure 2A,

546752 五、發明說明（8) 提供:矽基底20，其乃為晶圓型式，且其表面上製作有一致動=件21，然後於矽基底2〇之表面上塗佈_光阻薄膜 ^卩返後利用曝光方式，可使致動元件2 1上方之光阻薄膜22成，一未交聯區22A，用以定義噴墨腔之圖形。馨 )如第Μ圖所示，利用卷鍍製程，於光阻薄膜22之表面士升^成第一金屬層2 6，然後利用電鑄方法，於第一金屬 "表，上形成一第二金屬層28,、ϋ如第2C圖所示。隨 \ H2D圖戶斤示，於第二金屬層28表面上塗佈一光阻層 /，，、、'、後以曝光、顯影等步驟於光阻層27内形成一開口 JA ’其位於a交聯區m之上方，可用來定義噴孔之圖接來進行以及第將光阻光阻薄完成本值以及光於去除區 2 2 A ( 顯影型 27，再另夕卜一 ^ μ……r ,巧團荼作為罩幕程，則可去除開口27Α下方之第二金屬層Μ 丄/以形成一喷孔29。隨後，以顯影方式 ;22的U後’ ^第2F圖所示，以顯·的方式將 .、又如區22八去除，以形成一喷墨腔24，則發明之晶圓階段製程的喷孔片。得注意的是，本發明篦—宭阻芦27》]中’ #光阻薄膜22 :層27之材質性質同為溶劑型光阻層27的步驟中，㈣m料 1光阻薄賴選用溶劑型材質且光=的以材質的情況下，則需先以水顯影方式去曰二用水以溶劑顯影方式去除光阻薄膜2 2的未交，j二層種去除光阻薄膜22之未交聯區2法。 j >/ π，卟於石夕546752 V. Description of the invention (8) Provide: Silicon substrate 20, which is a wafer type, and has a uniform motion piece 21 on its surface, and then coated on the surface of the silicon substrate 20 with a photoresist film ^ 卩The exposure method can be used later to make the photoresist film 22 above the actuating element 21 into an uncrosslinked area 22A, which is used to define the pattern of the inkjet cavity. (Xin) As shown in FIG. M, a first metal layer 26 is formed on the surface of the photoresist film 22 using a coil plating process, and then a first metal layer is formed on the surface of the first metal using an electroforming method. The two metal layers 28, and ϋ are shown in FIG. 2C. As shown in the H2D illustration, a photoresist layer is coated on the surface of the second metal layer 28, and an opening JA 'is formed in the photoresist layer 27 by exposure, development, and other steps, which is located at a Above the cross-linking area m, it can be used to define the pattern of the nozzle holes to be carried out and the first value of the photoresist thinner and the light removal area 2 2 A (Development type 27, and then another ^ μ ......) r, as a mask, the second metal layer M Μ / under the opening 27A can be removed to form a spray hole 29. Subsequently, in a developing manner; after the U of 22 ′, as shown in FIG. 2F, In the obvious way, the area, such as the area 22, is removed to form an inkjet cavity 24, and the nozzle plate of the wafer stage process is invented. It should be noted that the present invention 篦 — 宭阻芦 27》] 中'#Photoresistive film 22: The material properties of layer 27 are the same as those of the solvent-based photoresist layer 27. In the case where the photoresist 1 is thin and the solvent-based material is used, the material must be water. The developing method is to use two solvents to remove the uncrossed photoresist film 22, and the two-layer method to remove the uncrosslinked area 2 of the photoresist film 22. j > / π

546752 五、發明說明（9) 基底2 0之背面挖洞，則於顯光阻材質自…2。之背程中可使未交聯區22A的相較於習知技術以電本發明係採用絲、微影、餘式f作的喷孔片，喷孔之積集度，且可提供以；；；；位；’，助於提昇本發明以錢鍍$ 一金屬層以及：心二：：品質。而且’ 嘴孔片，可以*效解決習知噴孔片二：1的方式製作外，本發明直接在晶圓上逸」 /耆生不佳的問題。此且忐士你③ 進仃被影蝕刻製程，苴f程鸿易且成本低廉，符合商業化之大量生產需求。八衣矛間易【弟-貫施例】 °月茶閱弟3A至3F圖，：^:題干太恭日一意圖…，孔 r基=面以=;:r 膜32 m用曝光方式’可使致動元件31上方之光阻薄膑32成，一未交聯區32A，用以定義喷墨腔之圖形。 =第3B圖所示，利用考鑛製程，於光阻薄膜^之表面形成一第一金屬層36，然後如第3C圖所示，於第一公 Γ: 2上塗佈一光阻層37，然後以曝光、顯影等步：於光P層37内形成一開口 37A，其位於未交聯區32a之可用來定義喷孔之圖案。接著，以光阻層37的圖， ^進仃蝕刻&私，則可去除開口 37A下方之第」金屬層546752 V. Description of the invention (9) Holes in the back of the substrate 20 are made of ... 2. In the backward process, compared with the conventional technology, the present invention is a nozzle plate made of silk, lithography, and residual type f compared with the conventional technology. The degree of accumulation of the nozzle holes can be provided; ;; bit; ', help to improve the present invention to plate a metal layer with money and: heart two :: quality. Moreover, the “mouth hole sheet” can effectively solve the problem of making the conventional spray hole sheet 2: 1. In addition, the present invention directly escapes on the wafer. In addition, you can enter the photoetching process, which is easy and cost-effective, and meets the needs of commercial mass production. Ba Yi Jian Jian Yi [brother-consistent example] ° Yuecha reading brother 3A to 3F ,: ^: title stem too respectful intention ..., hole r base = surface with = ;: r film 32 m with exposure method 'The photoresist thin film 32 above the actuating element 31 can be made into a non-crosslinked area 32A, which is used to define the pattern of the inkjet cavity. = As shown in FIG. 3B, a first metal layer 36 is formed on the surface of the photoresist thin film ^ by using a mining test process, and then as shown in FIG. 3C, a photoresist layer 37 is coated on the first male Γ: 2 Then, exposure, development and other steps are performed: an opening 37A is formed in the light P layer 37, which is located in the uncrosslinked area 32a and can be used to define the pattern of the orifice. Next, using the figure of the photoresist layer 37, if the etching is performed, the first metal layer under the opening 37A can be removed.

0741-7735TWF(N)；ND-P〇〇45;Cherry ptd 第12頁0741-7735TWF (N); ND-P〇〇45; Cherry ptd Page 12

546752 五、發明說明（ίο) 3 6 ’以形成一孑匕洞3 6 a 除。士口弟3 E圖所屬層36表面上形以及第一金屬層示，以顯影的方示，利成一第 36内形式將光，貝ιΐ完形成一喷墨腔3 4 值得注意的是，本除光阻層37時將光阻薄阻薄膜3 2以及光阻層3 7 光阻薄膜32選用溶劑型質的情況下，貝ij需以水溶劑顯影方式去除光阻去除光阻薄膜32之未交背面挖洞’則於顯影過自矽基底30之背面流出 ’然後以顯影方式將光阻層3 7去用，方法，可選擇性地於第一金二金屬層38 ，則可於第二金屬層38 成一噴孔39。最後，如第3F圖所阻薄膜3 2的未交聯區3 2 A去除，以成本發明之晶圓階段製程的喷孔务明第一貫施例中，為了避免在去膜32的未交聯區32A去除，因此光之材貝性負不可相同。舉例來說，材質，且光阻層37選用水顯影型材顯影方式去除光阻層37，後續需以薄膜32的未交聯區“A。另外一種聯區32A的方法，可於矽基底3〇之程中可使未交聯區32A的光阻材質【第三實施例】靖簽閱第4 A至4G圖，其顯示本發明第三命片於晶圓階段製程的剖面示意圖。首先，噴孔 =…底40’其乃為晶圓型式，且其表面上= ,動元件41、然後於石夕基底40之表面上塗 =- 42。隨後，利用曝光方式，可使致動元件41 =546752 V. Description of the invention (ίο) 3 6 ′ to form a dagger hole 3 6 a except. The image of Shikoudi 3E is shown on the surface of the layer 36 and the first metal layer. It is shown in the development method to form a 36th inner shape to form an inkjet cavity 3 4 It is worth noting that this When the photoresist layer 37 and the photoresist thin film 3 2 and the photoresist layer 3 7 are used as the photoresist film 32, if the photoresist film 32 is of a solvent type, Beij needs to remove the photoresist with a water-solvent developing method to remove the photoresist film 32. Crossing the back side of the hole 'flows out from the back of the silicon substrate 30 after development' and then uses the photoresist layer 37 in a developing manner. The method can be selectively used in the first gold-metal layer 38 and then in the second The metal layer 38 forms an injection hole 39. Finally, as shown in FIG. 3F, the uncrosslinked region 3 2 A of the resist film 32 is removed, and the injection hole of the wafer stage process of the invention is used in the first embodiment to avoid the uncrosslinked region of the film 32 being removed. 32A is removed, so the material properties of light cannot be the same. For example, the photoresist layer 37 is made of a material and the photoresist layer 37 is developed by using a water-developed profile to develop the photoresist layer 37. Subsequently, the uncrosslinked area "A" of the film 32 is used. Another method of connecting the area 32A can be used on a silicon substrate. In the process, the photoresist material of the non-crosslinked region 32A can be made. [Third embodiment] Jing signed the 4A to 4G diagrams, which shows a schematic cross-sectional view of the third wafer of the present invention in the wafer stage process. First, spray Hole = ... bottom 40 'It is a wafer type, and its surface =, moving element 41, and then coating on the surface of Shixi substrate 40 = -42. Then, using the exposure method, the actuating element 41 =

546752 五、發明說明⑴）膜42成為一未女口第46圖上形成一第一屬層4 6表面上疋義光阻層4 7 區4 2 A之上方所示，利用零形成一第二金厚度研磨至所一金屬層4 8之方法可採用化來研磨第二金父聯區42A，用以定義喷墨腔之圖形。所示，利用濺鍍製程，於光阻薄膜42之表面金屬層46。然後，如第4C圖所示，於第一金塗佈一光阻層47，然後以曝光、顯影等步驟的圖形，則殘留之光阻層47係覆蓋於未交聯 1 —可用來定義喷孔之圖案。接著，如第〇圖一續一方法，可選擇性地於第一金屬層46表面上屬層48，然後以研麼方式將第二金屬層48之需之喷孔片厚度。在較佳實施例中，可使第表面高度略低於光阻層47的高度，且此研磨 f機械研磨（CMP)製程，以選擇性研磨方式屬層48。如弟4 E圖所示，以顯寻；古々脸以第二金屬層48作為罩幕來進行^者制’如弟F圖所示， 48A下方之第一金屬層46，則可丁於^，則可去除孔洞屬層46内形成一喷孔49。最後，、弟:孟屬層Μ與第一金方式將光阻薄膜42的未交聯區42 圖所不，以顯影的『則發明之晶圓階段Τ/的除喷孔以片形成一喷墨腔值得主思的是，本發明=者、除光阻層47時將光阻薄膜4?沾:二施例中，為了避免在去阻薄膜42以及光阻層47之材併=聯區42A去除，因此光光阻薄膜4 2選用溶劑型材所貝二不可相同。舉例來說，質的情況下，貝ij需以水g \ 光阻層選用水顯影型材顯衫方式去除光阻層47，後續需以546752 V. Description of the invention ⑴) The film 42 becomes a female mouth. Figure 46 forms a first metal layer 4 on the surface. The photoresist layer 4 7 on the surface is shown above 4 2 A, and zero is used to form a second gold. The method of grinding the thickness to the first metal layer 48 can be used to grind the second gold parent region 42A to define the pattern of the inkjet cavity. As shown, a metal layer 46 is formed on the surface of the photoresist film 42 by a sputtering process. Then, as shown in FIG. 4C, a photoresist layer 47 is coated on the first gold, and then the patterns of steps such as exposure and development are applied, and the remaining photoresist layer 47 is covered with uncrosslinked 1—can be used to define the spray Pattern of holes. Next, as shown in FIG. 0, the method may be followed by selectively forming the metal layer 48 on the surface of the first metal layer 46, and then spraying the required thickness of the second metal layer 48 in a research manner. In a preferred embodiment, the height of the first surface can be made slightly lower than the height of the photoresist layer 47, and the polishing f mechanical polishing (CMP) process uses the selective polishing method to belong to the layer 48. As shown in Figure 4E, the search is performed; Gu's face uses the second metal layer 48 as a mask to perform the system. As shown in Figure F, the first metal layer 46 below 48A can be used in ^, A spray hole 49 can be formed in the hole-containing metal layer 46. Finally, my brother: the Mon layer M and the first gold method will not show the uncrosslinked area 42 of the photoresist film 42 in order to develop a spray hole for the wafer stage T / of the invention to form a spray. The ink cavity is worth thinking about. In the present invention, when the photoresist layer 47 is removed, the photoresist film 4 is adhered. In the two embodiments, in order to avoid the combination of the deblocking film 42 and the photoresist layer 47, the connection zone 42A is removed, so the photoresist film 4 2 is different from the solvent profile. For example, in the case of high quality, Beiij needs to use water-developed profiles with a water-g \ photoresist layer to remove the photoresist layer 47 in a visible shirt method.

546752 五、發明說明（12) 浴劑顯影方式去除光阻薄膜42的未交聯區42A。另外一種 ^除光阻薄膜4 2之未交聯區42a的方法，可於矽基底4〇之月面挖洞’則於顯影過程中可使未交聯區4 2 A的光阻材質自矽基底40之背面流出。、【第四實施 J青參閱片於晶圓階提供一 ί夕基致動元件51 52。隨後，膜5 2成為^— 士口第 5Β 然後以曝光光阻層5 7係之圖案。其膜5 2以及矽如弟5 D圖所形成一第二將光阻層5 7 並將第二金佳實施例中層5 7的高度程，以選擇例】第5 Α至5 F圖，其顯示本發明第四實施例之喷孔段製程的剖面示意圖。首先，如第5 A圖所示，底50 ’其乃為晶圓型式，且其表面上製作有一 ’然後於石夕基底5 〇之表面上塗佈一光阻薄膜利=曝光方式，可使致動元件5丨上方之光阻薄未父聯區5 2 A，用以定義喷墨腔之圖形。圖所示，於矽基底50表面上塗佈一光阻層57，、顯影等步驟定義光阻厣^ 7 1增13 f的圖开> ，則錄留之覆蓋於未交聯區52A之上方叮兩十声心上方，可用來定義喷孔後’如第5 C圖所示，刹田、、也、 =吓丁利用，鑛製程，於光阻薄基底50之表面上形成一笼人M Rlr· 一从弟一金屬層56。捲著，示’利用電鑄方法，可於筮 .m 一- 」於弟一金屬層56夷面上金屬層58。然後，如第5Fpi邮—曰〇b表曲上士 „ 圖所不，以研麼方式表面之弟二金屬層58以及第一金屬屬層58之厚度研磨至所+ $56去除’ 芏所需之噴孔片厚度。在較，可使第二金屬層58之表面古二度在华乂 e 士讲疳古、nr 回度可略低於光阻，且此研磨方法可採用於與4k 用化予機械研磨（C μ p )穸性研磨方式來研磨第二金屬層58。 «546752 V. Description of the invention (12) The non-crosslinked region 42A of the photoresist film 42 is removed by a bath developing method. Another method of removing the non-crosslinked area 42a of the photoresist film 42 is to dig a hole on the silicon surface 40 ′. During the development process, the photoresist material of the uncrosslinked area 4 2 A can be made of silicon. The back surface of the substrate 40 flows out. [Fourth implementation J Qing refer to the film at the wafer level to provide a 夕 Xiji actuating element 51 52. Subsequently, the film 5 2 becomes a pattern 5B and is then exposed to a photoresist layer 5 7 pattern. The film 52 and the silicon 5D pattern form a second photoresist layer 5 7 and the height range of the second gold layer in the embodiment 57 to select an example.] Figures 5A to 5F, which A schematic cross-sectional view showing a process of a nozzle section according to a fourth embodiment of the present invention. First, as shown in FIG. 5A, the bottom 50 ′ is a wafer type, and a surface is fabricated thereon, and then a photoresist film is coated on the surface of the Shi Xi substrate 50. The method of exposure = A thin photoresistive region 5 2 A above the actuating element 5 丨 is used to define the pattern of the inkjet cavity. As shown in the figure, a photoresist layer 57 is coated on the surface of the silicon substrate 50, and the steps of development and photoresist are defined to define the photoresistance ^ 7 1 to increase 13 f >, then the recorded area is covered in the uncrosslinked area 52A. Twenty sounds above the heart, which can be used to define the post-spouting hole. As shown in Figure 5C, Sakata ,,,, and = are used by mining. The mining process forms a cage on the surface of the thin photoresistive substrate 50. M Rlr · One from the young one metal layer 56. It is shown that the electroforming method can be used to apply the metal layer 58 on the surface of the first metal layer 56. Then, as described in Section 5Fpi—Singer 〇b Table Qu „Figure, the surface of the second metal layer 58 and the first metal layer 58 are ground to the thickness of +56 to remove the 芏 required The thickness of the orifice plate. In comparison, the surface of the second metal layer 58 can be reduced in ancient times, and the degree of nr can be slightly lower than the photoresistance, and this grinding method can be used in combination with 4k. Pre-mechanical grinding (C μ p) lapping method to grind the second metal layer 58. «

0741-7735TWF(N);ND-P0045;Cherry.ptd 第15頁 546752 圖式簡單說明第1圖顯示本發明之喷孔片結構的剖面示意圖。第2A至2F圖顯示本發明第一實施例之喷孔片於晶圓階段製程的剖面示意圖。第3A至3F圖顯示本發明第二實施例之喷孔片於晶圓階段製程的剖面示意圖。第4A至4G圖顯示本發明第三實施例之喷孔片於晶圓階段製程的剖面示意圖。第5A至5F圖顯示本發明第四實施例之喷孔片於晶圓階段製程的剖面示意圖。第6A至6F圖顯示本發明第五實施例之喷孔片於晶圓階段製程的剖面示意圖。第7A至7E圖顯示本發明第六實施例之喷孔片於晶圓階段製程的剖面示意圖。第8A至8F圖顯示本發明第七實施例之噴孔片於晶圓階段製程的剖面示意圖。第9 A至9 G圖顯示本發明第八實施例之喷孔片於晶圓階段製程的剖面示意圖。，【符號說明】 10、20、30、40、50、60、70、80、90 〜矽基底； 1 1、21、3 1、4 1、5 1、6 1、7 1、8 1、9 1 〜致動元件； 12、22、32、42、52、62、72、82、92 〜光阻薄膜； 12A、22A、32A、42A、52A、62A、72A、82A、92A〜未交聯區；0741-7735TWF (N); ND-P0045; Cherry.ptd Page 15 546752 Brief Description of Drawings Figure 1 shows a schematic cross-sectional view of the structure of the orifice plate of the present invention. Figures 2A to 2F are schematic cross-sectional views showing the process of forming the orifice plate in the wafer stage according to the first embodiment of the present invention. Figures 3A to 3F are schematic cross-sectional views showing the process of forming the orifice plate in the wafer stage according to the second embodiment of the present invention. Figures 4A to 4G are schematic cross-sectional views showing a process of a nozzle plate in a wafer stage according to a third embodiment of the present invention. Figures 5A to 5F are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a fourth embodiment of the present invention. Figures 6A to 6F are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a fifth embodiment of the present invention. Figures 7A to 7E are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a sixth embodiment of the present invention. Figures 8A to 8F are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a seventh embodiment of the present invention. Figures 9A to 9G are schematic cross-sectional views showing the process of forming an orifice plate in a wafer stage according to an eighth embodiment of the present invention. , [Symbol description] 10, 20, 30, 40, 50, 60, 70, 80, 90 ~ silicon substrate; 1 1, 21, 3 1, 4 1, 5 1, 6 1, 7 1, 8 1, 9 1 ~ Actuating element; 12, 22, 32, 42, 52, 62, 72, 82, 92 ~ Photoresist film; 12A, 22A, 32A, 42A, 52A, 62A, 72A, 82A, 92A ~ Uncrosslinked area ;

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Claims

)4()752 六申if專利範圍 1 · 種晶圓階段萝作> + —矽基底，Α勺乂右臂孔片結構，包括有： -光阻薄脬其；含有—致動元件；證 ^，係形成於該矽基底之#而, ， —弟一開D ，#带$/丞底之表面上；元件之表面，q接徂^ ; 5亥光阻薄膜内，係暴露該致動一第一八麼乍為—噴墨腔；一第二金屬】成於該光阻薄膜之表面上；及屬層，係形成於該第—金屬層之表面上；以一第二開XU，係貫穿今層，且位於該苐一口1^弟二金屬層以及該第一金屬 2.如申請專利：圍第丨上項方’以提，作^ ^ 片結構，其中該、斤述之曰曰圓階段製作之喷孔 3 ·如申笋 =-係為一晶圓型式。片結構，其中該矽1項所曰述之晶圓階段製作之喷孔 4 ·如申請專利範圍第j”項晶粒型式。 ϋ社構，J： + β 項所述之晶圓階段製作之噴孔動元件係為-薄膜加熱器。 p〇甘Γ ^利範圍第1項所述之晶圓階段製作之噴孔所… "該光阻薄膜係為高分子材質或是液態光阻材 6 ·如申請專利範圍第i項所述之晶圓階段製作之片結構，其中該第一金屬層係為單層金屬結構或多結構。屬 7 ·如申請專利範圍第1項所述之晶圓階段製作之噴孔片結構，其中該噴孔片係應用於一喷墨式列印頭晶片。 [_7735TWF(N)；ND-P0045;Cher ry.ptd 第24頁 546752 六、申請專利範圍 8 . —種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；進行濺鍍或蒸鍍製程，以於該光阻薄膜之表面上形成一第一金屬層；進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層；於該第二金屬層之表面上定義形成一光阻層，其中該光阻層包含有一開口，其位置包括該未交聯區上方之一部份或全部；以該光阻層為罩幕進行蝕刻製程，將該開口下方之該第二金屬層以及該第一金屬層去除，以形成一噴孔；顯影去除該光阻層；以及顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。 9 .如申請專利範圍第8項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 1 0.如申請專利範圍第8項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 1 1.如申請專利範圍第8項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有相同之) 4 () 752 Liushen if Patent Scope 1 · Kinds of wafer stage crops + +-silicon substrate, 乂乂臂 right arm hole sheet structure, including:-Photoresistance thin; containing-actuating element; Proof ^, is formed on the silicon substrate # ,, --- the first open D, # on the surface with $ / 丞 bottom; the surface of the component, q is connected ^; 5 Hai photoresist film, the exposure A first eighteenth is an inkjet cavity; a second metal] is formed on the surface of the photoresist film; and a metal layer is formed on the surface of the first metal layer; a second opening XU It runs through this layer and is located in the first metal layer and the first metal in the mouth. If you apply for a patent: you should mention the first item above to make a ^ ^ sheet structure. Nozzle 3 made in the round stage · If applied, =-is a wafer type. Wafer structure, in which the orifices made in the wafer stage described in item 1 of silicon 4 are as described in the patent application scope j "grain type. ΫSocial Structure, J: + β The spray hole moving element is a thin film heater. The spray hole manufactured in the wafer stage described in item 1 of the scope of the invention ... " The photoresist film is a polymer material or a liquid photoresist material 6 · The wafer structure produced at the wafer stage as described in item i of the patent application scope, wherein the first metal layer is a single-layer metal structure or a multi-structure. Belonging to 7 · The crystal as described in item 1 of the patent application scope The structure of the orifice plate produced in the round stage, wherein the orifice plate is applied to an inkjet print head wafer. [_7735TWF (N); ND-P0045; Cher ry.ptd Page 24 546752 6. Application patent scope 8 -A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist film Contains an uncrosslinked region, and the uncrosslinked region is located in the Over the element; performing a sputtering or evaporation process to form a first metal layer on the surface of the photoresist film; performing an electroforming process to form a second metal layer on the surface of the first metal layer; A photoresist layer is defined on the surface of the second metal layer, wherein the photoresist layer includes an opening, and its position includes a part or all of the area above the uncrosslinked area; the photoresist layer is used as a mask to perform an etching process. Removing the second metal layer and the first metal layer below the opening to form a spray hole; developing to remove the photoresist layer; and developing to remove uncrosslinked areas of the photoresist film for the photoresist An ink-jet cavity is formed in the thin film. 9. The method for manufacturing the orifice plate at the wafer stage as described in item 8 of the patent application scope, wherein the silicon substrate is a wafer type. The manufacturing method of the orifice plate at the wafer stage according to item 8, wherein the actuating element is a thin film heater. 1 1. The manufacturing of the orifice plate at the wafer stage according to item 8 of the patent application scope Method, wherein the photoresist film and the The material of the photoresist layer has the same

0741-7735TWF(N);ND-P0045;Cherry.ptd 第25頁 546752 六、申請專利範圍水顯影或溶劑顯影性質。 1 2.如申請專利範圍第8項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有不相同之水顯影或溶劑顯影性質。 1 3.如申請專利範圍第8項所述之晶圓階段之喷孔片的製作方法，其中於顯影去除該未交聯區的步驟中，該光阻薄膜之未交聯區的材質可自該矽基底之背面流出。 1 4. 一種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；進行濺鍍或蒸鍍製程，以於該光阻薄膜之表面上形成一第一金屬層；於該第一金屬層之表面上定義形成一光阻層，其中該光阻層包含有一開口，其位置包括該未交聯區上方之一部份或全部；以該光阻層為罩幕進行蝕刻製程，將該開口下方之該第一金屬層去除，以形成一孔洞；顯影去除該光阻層；進行電铸製程，以於該第一金屬層表面上形成一第二金屬層，則該第二金屬層以及該第一金屬層内形成一喷 iL ；0741-7735TWF (N); ND-P0045; Cherry.ptd Page 25 546752 6. Scope of patent application Water development or solvent development properties. 1 2. The method for manufacturing the orifice plate at the wafer stage according to item 8 of the scope of the patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 1 3. The method for manufacturing a nozzle plate at the wafer stage according to item 8 of the scope of patent application, wherein in the step of developing and removing the uncrosslinked region, the material of the uncrosslinked region of the photoresist film can be The back of the silicon substrate flows out. 1 4. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist film An uncrosslinked region is included, and the uncrosslinked region is located above the actuating element; a sputtering or evaporation process is performed to form a first metal layer on the surface of the photoresist film; A photoresist layer is defined on the surface of the metal layer, wherein the photoresist layer includes an opening, and its position includes a part or all of the area above the uncrosslinked area. The photoresist layer is used as a mask to perform an etching process. Removing the first metal layer under the opening to form a hole; developing to remove the photoresist layer; performing an electroforming process to form a second metal layer on the surface of the first metal layer, the second metal layer And forming a spray iL in the first metal layer;

0741-7735TWF(N);ND-P0045;Cherry.ptd 第26頁 546752 六、申請專利範圍顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。 1 5.如申請專利範圍第1 4項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 1 6.如申請專利範圍第1 4項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 1 7.如申請專利範圍第1 4項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有不相同之水顯影或溶劑顯影性質。 1 8. —種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；進行濺鍍或蒸鍍製程，以於該光阻薄膜之表面上形成一第一金屬層於該第一金屬層之表面上定義形成一光阻層，其中該光阻層之位置包括該未交聯區上方之一部份或全部；進行電禱製程，以於該第一金屬層表面上形成一第二金屬層；選擇性研磨該第二金屬層，直至使該第二金屬層達到預定喷孔片之厚度；顯影去除該光阻層，以於第二金屬層内形成一孔洞；0741-7735TWF (N); ND-P0045; Cherry.ptd Page 26 546752 VI. Patent Application Scope The uncrosslinked area of the photoresist film is removed by development to form an inkjet cavity in the photoresist film. 1 5. The method for manufacturing a nozzle plate at the wafer stage as described in item 14 of the scope of patent application, wherein the silicon substrate is a wafer type. 16. The method for manufacturing a nozzle plate at the wafer stage according to item 14 of the scope of patent application, wherein the actuating element is a thin film heater. 1 7. The method for manufacturing the orifice plate at the wafer stage as described in item 14 of the scope of the patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 1 8. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element. A sputtering or evaporation process is performed to form a first metal layer on the surface of the photoresist film. A photoresist layer is defined on the surface of the metal layer, and the position of the photoresist layer includes a part or all of the area above the uncrosslinked area; an electrical prayer process is performed to form a first layer on the surface of the first metal layer. Two metal layers; selectively grinding the second metal layer until the second metal layer reaches a thickness of a predetermined nozzle hole; developing and removing the photoresist layer to form a hole in the second metal layer;

0741-7735TWF(N);ND-P0045;Cherry.ptd 第27頁 546752 六、申請專利範圍以該第二金屬層為罩幕進行蝕刻製程，將該孔洞下方之該第一金屬層去除，則可於該第二金屬層以及該第一金屬層内形成一喷孔；以及顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。 1 9.如申請專利範圍第1 8項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 2 0.如申請專利範圍第1 8項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 2 1.如申請專利範圍第1 8項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有不相同之水顯影或溶劑顯影性質。 2 2. —種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；於該光阻薄膜之表面上定義形成一光阻層，其中該光阻層之位置包括該未交聯區上方之一部份或全部；進行濺鍍或蒸鍍製程，以於該光阻層與光阻薄膜之表面上形成一第一金屬層；達行電禱製程，以於該第一金屬層表面上形成一第二金屬層；0741-7735TWF (N); ND-P0045; Cherry.ptd Page 27 546752 Sixth, the scope of the patent application for the etching process using the second metal layer as a mask, removing the first metal layer under the hole, you can Forming a spray hole in the second metal layer and the first metal layer; and developing and removing the uncrosslinked area of the photoresist film to form an inkjet cavity in the photoresist film. 1 9. The method for manufacturing a nozzle plate at the wafer stage as described in item 18 of the scope of patent application, wherein the silicon substrate is a wafer type. 20. The method for manufacturing a nozzle plate at the wafer stage according to item 18 of the scope of the patent application, wherein the actuating element is a thin film heater. 2 1. The method for manufacturing a nozzle plate at the wafer stage as described in item 18 of the scope of patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 2 2. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform moving element on its surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element. A photoresist layer is defined on the surface of the photoresist film, and the position of the photoresist layer includes the uncrosslinked region. Part or all of the area above the area; performing a sputtering or evaporation process to form a first metal layer on the surface of the photoresist layer and the photoresist film; Forming a second metal layer on the surface;

0741 -7735TWF(N) ;ND-P0045 ;Cher ry .ptd 第28頁 546752 六、申請專利範圍進行選擇性研磨製程，將該光阻層上方之該第二金屬層以及該第一金屬層去除，並使該第二金屬層達到預定喷孔片之厚度；顯影去除該光阻層，以於第二金屬層以及該第一金屬層内形成一喷孑L ;以及顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔。 2 3.如申請專利範圍第22項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 2 4.如申請專利範圍第22項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 2 5.如申請專利範圍第2 2項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有相同之水顯影或溶劑顯影性質。 2 6.如申請專利範圍第22項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有不相同之水顯影或溶劑顯影性質。 2 7. —種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内0741 -7735TWF (N); ND-P0045; Cherry.ptd Page 28 546752 6. Apply for a selective grinding process to remove the second metal layer and the first metal layer above the photoresist layer. And making the second metal layer reach the thickness of the predetermined orifice; developing to remove the photoresist layer to form a spray film in the second metal layer and the first metal layer; and developing to remove the photoresist film. A cross-linking area to form an inkjet cavity in the photoresist film. 2 3. The manufacturing method of the nozzle plate at the wafer stage according to item 22 of the scope of patent application, wherein the silicon substrate is a wafer type. 2 4. The manufacturing method of the nozzle plate at the wafer stage according to item 22 of the patent application scope, wherein the actuating element is a thin film heater. 2 5. The method for manufacturing a nozzle plate at the wafer stage according to item 22 of the scope of patent application, wherein the material of the photoresist film and the photoresist layer have the same water developing or solvent developing properties. 2 6. The method for manufacturing the orifice plate at the wafer stage according to item 22 of the scope of patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 2 7. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform moving element on its surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element; the uncrosslinked region of the photoresist film is removed by development so as to be within the photoresist film

0741-7735TWF(N);ND-P0045;Cherry.ptd 第29頁 546752 六、申請專利範圍形成一喷墨腔；於該矽基底之整個表面上形成一固態薄膜，以覆蓋該光阻薄膜以及該喷墨腔；進行濺鍍或蒸鍍製程，以於該固態薄膜之表面上形成一第一金屬層；進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層；於該第二金屬層之表面上定義形成一光阻層，其中該光阻層包含有一開口，係位於該喷墨腔之上方；以及以該光阻層為罩幕進行蝕刻製程，將該開口下方之該第二金屬層、該第一金屬層以及該固態薄膜去除，以形成一喷孑L，並同時暴露出該喷墨腔。 2 8.如申請專利範圍第27項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 2 9.如申請專利範圍第27項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 3 〇.如申請專利範圍第2 7項所述之晶圓階段之喷孔片的製作方法，其中該光阻薄膜與該光阻層的材質具有相同之水顯影或溶劑顯影性質。 3 1.如申請專利範圍第2 7項所述之晶圓階段之喷孔片的製作方法，其中於顯影去除該未交聯區的步驟中，該光阻薄膜之未交聯區的材質可自該矽基底之背面流出。 3 2. —種晶圓階段之喷孔片的製作方法，包括下列步驟：、0741-7735TWF (N); ND-P0045; Cherry.ptd page 29 546752 6. Application for patent formation to form an inkjet cavity; a solid film is formed on the entire surface of the silicon substrate to cover the photoresist film and the An inkjet cavity; performing a sputtering or evaporation process to form a first metal layer on the surface of the solid film; performing an electroforming process to form a second metal layer on the surface of the first metal layer; A photoresist layer is defined on the surface of the second metal layer, wherein the photoresist layer includes an opening, which is located above the inkjet cavity; and an etching process is performed using the photoresist layer as a mask, and a photoresist layer is formed below the opening. The second metal layer, the first metal layer, and the solid-state film are removed to form a spray nozzle L, and at the same time, the inkjet cavity is exposed. 2 8. The manufacturing method of the nozzle plate at the wafer stage according to item 27 of the patent application scope, wherein the silicon substrate is a wafer type. 2 9. The method for manufacturing a nozzle plate at the wafer stage according to item 27 of the patent application scope, wherein the actuating element is a thin film heater. 3 〇. The method for manufacturing the orifice plate at the wafer stage according to item 27 of the patent application scope, wherein the material of the photoresist film and the photoresist layer have the same water developing or solvent developing properties. 3 1. The method for manufacturing a nozzle plate at the wafer stage as described in item 27 of the patent application scope, wherein in the step of developing and removing the uncrosslinked region, the material of the uncrosslinked region of the photoresist film may be Flowing from the back of the silicon substrate. 3 2. — A method of making a nozzle plate at the wafer stage, including the following steps:

0741-7735TWF(N);ND-P0045;Cherry.ptd 第30頁 546752 六、申請專利範圍提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一噴墨腔；於該矽基底之整個表面上形成一固態薄膜，以覆蓋該光阻薄膜以及該噴墨腔；進行濺鍍或蒸鍍製程，以於該固態薄膜之表面上形成一第一金屬層；於該第一金屬層之表面上定義形成一光阻層，其中該光阻層包含有一開口，其位置包括該喷墨腔上方之一部份或全部；以該光阻層為罩幕進行蝕刻製程，將該開口下方之該第一金屬層以及該固態薄膜去除，以形成一孔洞，並暴露該喷墨腔；顯影去除該光阻層；以及進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層，則該第二金屬層以及該第一金屬層内形成一喷孔。 3 3.如申請專利範圍第32項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 3 4.如申請專利範圍第3 2項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。0741-7735TWF (N); ND-P0045; Cherry.ptd Page 30 546752 6. The scope of the patent application provides a Shi Xi substrate, which includes a uniform moving element on the surface; a photoresist film is formed on the surface of the silicon substrate, where The photoresist film includes an uncrosslinked area, and the uncrosslinked area is located above the actuating element. The uncrosslinked area of the photoresist film is removed by development to form an inkjet cavity in the photoresist film. Forming a solid film on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity; performing a sputtering or evaporation process to form a first metal layer on the surface of the solid film; A photoresist layer is defined on the surface of the first metal layer, wherein the photoresist layer includes an opening at a position including a part or all of the upper part of the inkjet cavity; the photoresist layer is used as a mask to perform an etching process. Removing the first metal layer and the solid film under the opening to form a hole and exposing the inkjet cavity; developing to remove the photoresist layer; and performing an electroforming process on the surface of the first metal layer Forming a second metal layer, the second metal layer and forming a metal layer within the first orifice. 3 3. The manufacturing method of the nozzle plate at the wafer stage according to item 32 of the patent application scope, wherein the silicon substrate is a wafer type. 3 4. The method for manufacturing a nozzle plate at the wafer stage according to item 32 of the scope of the patent application, wherein the actuating element is a thin film heater.

0741-7735TWF(N);ND-P0045;Cherry.ptd 第31頁 546752 六、申請專利範圍 3 5.如申請專利範圍第3 2項所述之晶圓階段之喷孔片的製作方法，其中於顯影去除該未交聯區的步驟中，該光阻薄膜之未交聯區的材質可自該矽基底之背面流出。 3 6. —種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔；於該矽基底之整個表面上形成一固態薄膜，以覆蓋該光阻薄膜以及該喷墨腔；進行濺鍍或蒸鍍製程，以於該固態薄膜之表面上形成一第一金屬層；於該第一金屬層之表面上定義形成一光阻層，其中該光阻層之位置包括該喷墨腔上方之一部份或全部；進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層；選擇性研磨該第二金屬層，直至使該第二金屬層達到預定喷孔片之厚度；顯影去除該光阻層，以於第二金屬層内形成一孔洞；以該第二金屬層為罩幕進行|虫刻製程，將該孔洞下方之該第一金屬層以及該固態薄膜去除，則可於該第二金屬0741-7735TWF (N); ND-P0045; Cherry.ptd Page 31 546752 VI. Application for patent scope 3 5. The method for making the orifice plate of the wafer stage as described in Item 32 of the patent application scope, where In the step of removing the uncrosslinked region during development, the material of the uncrosslinked region of the photoresist film can flow out from the back surface of the silicon substrate. 3 6. A method for manufacturing a nozzle plate at the wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element; the uncrosslinked region of the photoresist film is removed by development to form an inkjet cavity in the photoresist film; A solid film is formed on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity; a sputtering or evaporation process is performed to form a first metal layer on the surface of the solid film; A photoresist layer is defined on the surface of the metal layer, and the position of the photoresist layer includes a part or all of the upper part of the inkjet cavity. An electroforming process is performed to form a second layer on the surface of the first metal layer. A metal layer; selectively grinding the second metal layer until the second metal layer reaches a thickness of a predetermined nozzle hole; developing and removing the photoresist layer to form a hole in the second metal layer; using the second metal Floor For the mask | worm process, removing the first metal layer and the solid film under the hole can be performed on the second metal.

0741-7735TWF(N);ND-P0045;Cherry.ptd 第32頁 546752 六、申請專利範圍層以及該第一金屬層内形成一喷孔，並暴露該喷墨腔。 3 7 ·如申請專利範圍第3 6項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 3 8.如申請專利範圍第3 6項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 3 9 ·如申請專利範圍第3 6項所述之晶圓階段之喷孔片的製作方法，其中於顯影去除該未交聯區的步驟中，該光阻薄膜之未交聯區的材質可自該矽基底之背面流出。 4 0. —種晶圓階段之喷孔片的製作方法，包括下列步驟：提供一石夕基底，其表面上包含有一致動元件；於該矽基底之表面形成一光阻薄膜，其中該光阻薄膜内包含有一未交聯區，且該未交聯區係位於該致動元件上方；顯影去除該光阻薄膜之未交聯區，以於該光阻薄膜内形成一喷墨腔；於該矽基底之整個表面上形成一固態薄膜，以覆蓋該光阻薄膜以及該喷墨腔；於該固態薄膜之表面上定義形成一光阻層，其中該光阻層之位置包括該喷墨腔上方之一部份或全部；進行濺鍍或蒸鍍製程，以於該光阻層與該固態薄膜之表面上形成一第一金屬層；進行電鑄製程，以於該第一金屬層表面上形成一第二金屬層；0741-7735TWF (N); ND-P0045; Cherry.ptd Page 32 546752 VI. Scope of patent application A spray hole is formed in the layer and the first metal layer, and the inkjet cavity is exposed. 37. The method for manufacturing a nozzle plate at the wafer stage according to item 36 of the patent application scope, wherein the silicon substrate is a wafer type. 3 8. The method for manufacturing a nozzle plate at the wafer stage according to item 36 of the patent application scope, wherein the actuating element is a thin film heater. 3 9 · According to the method for manufacturing a nozzle plate at the wafer stage described in item 36 of the patent application scope, in the step of removing the uncrosslinked region by development, the material of the uncrosslinked region of the photoresist film may be Flowing from the back of the silicon substrate. 4 0. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform moving element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element; the uncrosslinked region of the photoresist film is removed by development to form an inkjet cavity in the photoresist film; A solid film is formed on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity; a photoresist layer is defined on the surface of the solid film, wherein the position of the photoresist layer includes above the inkjet cavity Part or all of them; performing a sputtering or evaporation process to form a first metal layer on the surface of the photoresist layer and the solid film; and performing an electroforming process to form a first metal layer surface A second metal layer;

0741-7735TWF(N);ND-P0045;Cher ry.ptd 第33頁 546752 六、申請專利範圍進行選擇性研磨製程，將該光阻層上方之該第二金屬層以及該第一金屬層去除，並使該第二金屬層達到預定喷孔片之厚度；顯影去除該光阻層，以於第二金屬層以及該第一金屬層内形成一喷孑L ;以及顯影去除該固態薄膜，以暴露該喷墨腔。 4 1.如申請專利範圍第4 0項所述之晶圓階段之喷孔片的製作方法，其中該矽基底係為一晶圓型式。 4 2 ·如申請專利範圍第4 0項所述之晶圓階段之喷孔片的製作方法，其中該致動元件係為一薄膜加熱器。 4 3.如申請專利範圍第4 0項所述之晶圓階段之喷孔片的製作方法，其中於顯影去除該未交聯區的步驟中，該光阻薄膜之未交聯區的材質可自該石夕基底之背面流出。0741-7735TWF (N); ND-P0045; Cher ry.ptd Page 33 546752 6. Apply for a selective grinding process to remove the second metal layer and the first metal layer above the photoresist layer. And making the second metal layer reach the thickness of the predetermined nozzle hole; developing to remove the photoresist layer to form a spray film in the second metal layer and the first metal layer; and developing to remove the solid film to expose The inkjet cavity. 4 1. The manufacturing method of the nozzle plate at the wafer stage as described in item 40 of the scope of patent application, wherein the silicon substrate is a wafer type. 4 2 · The method for manufacturing a nozzle plate at the wafer stage according to item 40 of the patent application scope, wherein the actuating element is a thin film heater. 4 3. The method for manufacturing a nozzle plate at the wafer stage as described in item 40 of the scope of patent application, wherein in the step of removing the uncrosslinked region by development, the material of the uncrosslinked region of the photoresist film may be From the back of the Shi Xi base.

0741-7735TWF(N);ND-P0045;Cherry.ptd 第34頁0741-7735TWF (N); ND-P0045; Cherry.ptd p.34