A7 541628 ____B7____ 五、發明說明（/ ) 【技術領域】 本發明係有關用於使構成導入有雜質之基板的原子所 產生之晶格缺陷予以復原，在使原子再結晶後，使被導入 基板之雜質活性化之退火方法、極淺接合層形成方法及極 淺接合層形成裝置。 【習知技術】 近年來，在以矽單結晶晶圓作爲基板所形成的超大規 模積體電路（LSI)爲始之半導體裝置，隨著半導體裝置之 設計規格之縮小，而爲了防止短路效應，並且使半導體裝 置高速動作，故產生使設於半導體裝置之電晶體形成之擴 散層的接合深度變淺的必要性。因此，在動態隨機存取記 憶裝置（DRAM)等所使用之MOSFET乃至雙極電晶體（ bipolar transistor)中，例如，在具有閘極長度爲1〇0納米 左右之電晶體形成之擴散層的接合深度，被要求爲50納米 左右。進而，在具有閘極長度爲50納米左右之電晶體形成 之擴散層的接合深度，被要求爲10納米左右。因此，正檢 討在具有10〜50納米左右深度之極淺接合層摻入高濃度之 雜質的技術，以及用以使被摻入極淺接合層之雜質活性化 之退火技術。 此種習知退火技術之一例，已知係利用固態擴散過程 (將注入有雜質之基板全體，使用紅外線燈管等加熱成 1000°C左右之紅外線急速熱處理（RTA))之在熱平衡狀 態之活性化法。 又，就使用雷射之習知技術而言，照射308nm之 —----3_ 衣紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (氣先閱讀t面之注意事項再填寫本頁) I I 1 1 1 I 1 訂11 I — II--· A7 541628 ___B7_____ 五、發明說明（i )A7 541628 ____B7____ V. Description of the Invention (/) [Technical Field] The present invention relates to the restoration of lattice defects generated by atoms constituting a substrate into which impurities are introduced. After the atoms are recrystallized, the defects introduced into the substrate are restored. An annealing method for activating impurities, a method for forming a very shallow bonding layer, and a device for forming a very shallow bonding layer. [Know-how] In recent years, in semiconductor devices starting with very large scale integrated circuits (LSIs) formed using silicon single crystal wafers as substrates, as the design specifications of semiconductor devices have been reduced, in order to prevent short-circuit effects, In addition, since the semiconductor device is operated at a high speed, it is necessary to reduce the bonding depth of a diffusion layer formed by a transistor provided in the semiconductor device. Therefore, in MOSFETs and bipolar transistors used in dynamic random access memory (DRAM) and the like, for example, bonding of a diffusion layer formed by a transistor having a gate length of about 100 nanometers The depth is required to be around 50 nm. Furthermore, the junction depth of a diffusion layer formed with an transistor having a gate length of about 50 nm is required to be about 10 nm. Therefore, a technique for incorporating a high concentration of impurities in an extremely shallow bonding layer having a depth of about 10 to 50 nm, and an annealing technique for activating the impurities incorporated in the extremely shallow bonding layer are being examined. An example of such a conventional annealing technique is known to be the activity in thermal equilibrium using a solid state diffusion process (infrared rapid heat treatment (RTA) which heats the entire substrate with impurities implanted to about 1000 ° C using an infrared lamp).化 法。 The law. In addition, as far as the conventional technology of using laser is concerned, the irradiation of 308nm —---- 3_ The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love). Fill out this page again) II 1 1 1 I 1 Order 11 I — II-- · A7 541628 ___B7_____ V. Description of the invention (i)
XeCl準分子雷射，在使矽基板的表面溶融後，使矽原子再 結晶之技術，係眾所周知之雷射退火。此處’例如，將 0.35J/cm2之雷射退火與800°C10秒之RTA加以組合來進 行熱處理（參考文獻 Ken-ich Goto他，ρ931-933·、 International Electron Device Meeting 1999 at Washington DC)。 但，利用在熱平衡狀態下之藉由紅外線急速熱處理 (RTA)之固態擴散過程之前述習知退火技術，雖對使雜質 摻入層活性化有效，惟基板全體係以i〇〇〇°C左右的高溫加 熱，因此，會有使被注入之雜質往基板的深部擴散的問題 。例如，以低能量所得之深20納米的硼元素注入層，係藉 由進行10秒間之1000°C急速加熱處理，其深度變爲50納 米，因而造成比加熱前2.5倍的深度之問題。 又，在必須有複數次雜質導入程序之LSI製程，以習 知熱處理技術，由於基板全體被雜質擴散之高溫加熱，因 此，會有雜質擴散到不需擴散的位置的問題。 進而，在照射前述準分子雷射之前述習知技術，雖可 使對基板深度之不必要的擴散作相當程度之抑制，但，由 於無法使構成導入有雜質之基板的原子所產生之晶格缺陷 予以充分復原，因此，在所製成之半導體裝置所形成的電 晶體，會產生漏電流變大的問題。 本發明係爲解決則述問題而成者，其目的係提供可防 止活性化之雜質往基板的深部進行不必要之擴散之退火方 法。 ........... «Α---- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (策先閱讀t面之注意事項再填寫本頁) --I I I I I 訂·111111 I - *5^ . 541628 A7 ____B7___ 五、發明說明（$ ) (讒先閱讀t面之注意事項再填寫本頁) 本發明之其他目的，係提供可形成接合深度淺的極薄 接合層之極淺接合層形成方法及極淺接合層形成裝置。 【發明之揭示】 本發明之退火方法，係用以將導入有雜質之基板進行 退火之方法，其特徵係包含：再結晶步驟，在被導入前述 基板之前述雜質未活性化之程度且十分低的基板溫度，使 前述基板變爲熱的平衡狀態的方式來進行前述基板之熱處 理，藉以使構成前述基板之原子再結晶；及電磁波照射步 驟’在述再結晶步驟之後’以將即述基板保持在g[j述十 分低的基板溫度之狀態下，爲於熱的非平衡狀態下使前述 雜質活性化，而以直接激發前述原子的晶格振動(phonon) 的方式，將具有既定頻帶之電磁波照射於前述基板。 在前述中，所謂之晶格振動(phonon)，係藉由熱運動 或來自外部的強制運動，而在存在於結晶晶格位置的原子 間，相對於原子的微小位移，在作爲依虎克（Hooke)定 律之還原力（彈力）而作用之原子間力所造成的原子振動 ，係往相鄰之原子傳導之連成振動。 本發明之極淺接合層形成方法，係用以在導入有雜質 之半導體基板上’形成極淺接合層之極淺接合層形成方法 ，其特徵係包含：再結晶步驟，在被導入前述半導體基板 之前述雜質未活性化之程度且十分低的基板溫度，使前述 半導體基板變爲熱的平衡狀態的方式來進行前述半導體基 板之熱處理，藉以使構成前述半導體基板之半導體原子再 結晶；及電磁波照射步驟，在前述再結晶步驟之後，以將 -§--- 衣紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 541628 A7 五、發明說明（绦） 即述半導體基板保持在前述十分低的基板溫度之狀態下， 爲於熱的非平衡狀態下使前述雜質活性化，來形成極淺接 合層’而以直接激發前述半導體原子的晶格振動(ph〇non) 白勺方式：’將具有既定頻帶之電磁波照射於前述半導體基板 Ο 前述所謂之極淺接合層，係形成於設於半導體裝置電 晶體之擴散層，其接合深度大致20納米以下、1納米以上 〇 本發明之極淺接合層形成裝置，係用以在導入有雜質 t半1導體基板上，形成極淺接合層之極淺接合層形成裝置 ’其特徵係具有··再結晶機構，在被導入前述半導體基板 之前述雜質未活性化之程度且十分低的基板溫度，使前述 半導體基板變爲熱的平衡狀態的方式來進行前述半導體基 板之熱處理，藉以使構成前述半導體基板之半導體原子再 結晶；及電磁波照射機構，在藉由前述再結晶機構將再結 晶厚之前述半導體基板保持在前述十分低的基板溫度之狀 態下，爲於熱的非平衡狀態下使前述雜質活性化，來形成 極淺接合層，而以直接激發前述半導體原子的晶格振動 (phonon)的方式，將具有既定頻帶之電磁波照射於前述半 導體基板上。 【圖式之簡單說明】 圖1係表示本實施形態之導入有雜質之半導體基板之 截面圖。 圖2係表示本實施形態之用以進行再結晶步驟之電爐 (讒先閱讀t面之注意事項再填寫本頁) - 訂--------線_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 541628 __B7 _ 五、發明說明（r ) 之模式截面圖。 圖3係表示本實施形態之用以進行電磁波照射步驟之 電磁波照射裝置之模式截面圖。 圖4係表示本實施形態之用以進行再結晶步驟及電磁 波照射步驟兩者之極淺接合層形成裝置之模式截面圖。 【發明之較佳實施形態】 就本發明之極淺接合層形成方法而言，前述半導體基 板較佳係由矽和矽化合物兩者任一而構成。此係可獲得形 成於矽基板之半導體裝置。 在前述再結晶步驟中’較佳係以700°C以下之基板溫 度來對前述半導體基板進行熱處理。此係由於被導入於半 導體基板之雜質，在熱的平衡狀態下，不會活性化程度之 十分低的基板溫度。 在前述再結晶步驟中，較佳係以電熱爐及燈管加熱爐 兩者之一^來對則述半導體基板進彳了熱處理。此係由於藉此 簡單之構成，即可進行熱處理。 在前述電磁波照射步驟中，較佳係被照射之前述電磁 波包含具有10毫微微秒以上、1000毫微微秒以下之脈衝 寬之超短脈衝雷射光，又，較佳係包含具有10GHz以上、 ITHz以下之頻帶寬之連續波輸出雷射光，又，較佳係包含 具有10GHz以上、100GHz以下之振盪頻率之毫米波帶電 磁波。在前述電磁波照射步驟中，較佳係被照射之前述電 磁波具有對應於前述半導體原子與前述雜質間之結合能量 之頻帶。此係由於可更確實地激發半導體原子之晶格振動 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (讒先閱讀常面之注意事項再填寫本頁) 訂---------線· A7 541628 ___B7__ 五、發明說明（厶） (phonon)之古夂。 前述電磁波照射步驟中，較佳係以將前述半導體基板 保持在前述十分低的基板溫度的方式，來邊冷卻前述半導 體基板，邊照射前述電磁波於前述半導體基板上。藉由該 冷卻，由於可將半導體基板確實保持在熱的平衡狀態下， 雜質實質上未活性化的程度之十分低的基板溫度，因此， 可確實防止活性化之雜質往半導體基板的深部之不必要的 擴散。 以下，參照圖式以說明本實施形態。圖1係本實施形 態之導入有雜質之矽基板2之截面圖。在矽基板2表面， 形成雜質層3。雜質層3，例如係以離子注入法或電漿摻入 法，將雜質導入矽基板2的方式來形成。 圖2係表示用以進行本實施形態之再結晶步驟之電熱 爐4之模式截面圖。電熱爐4具有室14。在室14內部， 容置預先形成有雜質之矽基板2。在室14設置加熱器7， 用以對容置於室14之矽基板2進行加熱。在室14之一方 側壁設置氣體導入管5，用以將氮氣（N2)導入室Η內部 ，而在室14之另一方側壁設置氣體排出管6，用以將室14 內部之氣體往室Η外部排出。 在如此構成之電熱爐4，在將預先形成有雜質之矽基 板2容置於室14中之後，使氮氣（N2)通過氣體導入管5 ，並將其導入室14內部’而將存在於室14內部之熱體通 過氣體排出管6，藉此，在室14內部形成氮氣（N2)之環 境氣氛。 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (讒先閱讀f*面之注意事項再填寫本頁) - 541628 A7 __B7__ 五、發明說明（1 ) 又，矽基板2之基板溫度，係以加熱器7對砂基板2 加熱，俾使矽基板2在熱的平衡狀態下，形成雜質未活性 化程度之十分低的700°C以下。例如，矽基板2係在大致 600°C的基板溫度，大致5小時期間對矽基板2加熱，俾變 爲熱的平衡狀態。構成加熱後之矽基板2的砂原子，以 致600°C的基板溫度進行再結晶，並將構成矽基板2 (導入 有雜質）的矽原子所產生之晶格缺陷予以復原。 藉由該熱處理，而將構成矽基板2的矽原子再排列， 並消除矽原子所產生之晶格缺陷。該熱處理之重點，係在 使矽原子再結晶時的基板溫度，在熱的平衡狀態下，形成 雜質實質上未活性化程度之十分低的700°C以下。 圖3係表示用以進行本實施形態之電磁波照射步驟之 電磁波照射裝置8之模式截面圖。電磁波照射裝置8具有 室9。在室9內部設置載置台13。在載置台13上，將藉由 前述電熱爐4熱處理後之矽基板2，以使雜質層3形成於 其上側的方式載置。 電磁波照射裝置8具有相干電磁波源10。相干電磁波 源10係產生入射相干電磁波12。在室9，以與形成於矽基 板2 (被載置於載置台13)之雜質層3相對向的方式來設 置照射光學系統11。照射光學系統11，係將以相干電磁波 源10所產生之入射相干電磁波12轉換爲照射相干電磁波 1後，往形成有雜質層3之矽基板2照射。又，照射光學 系統11，係由用以確保往矽基板2照射之照射相干電磁波 1之照射均一性所需之既定光學構件所構成。在室9內部 (讒先閱讀t面之注意事項再填寫本頁) 訂---------線_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 541628 A7 __ __ B7 —_ 五、發明說明（g ) ’例如保持氮、氦、氬等惰性氣體之環境氣氛。 在如此所構成之電磁波照射裝置8，若將藉由前述電 熱爐4以大致600°C的基板溫度熱處理後之矽基板2，載置 於設在室9內部（保持於惰性氣體之環境氣氛）之載置台 13上，則矽基板2之基板溫度係在熱的平衡狀態下，保持 雜質未活性化程度之十分低的500°C以下。 又，藉由相干電磁波源10來產生入射相干電磁波12 。照射光學系統11，以確保往矽基板2照射之照射相干電 磁波1之照射均一性的方式，而將入射相干電磁波12轉換 爲照射相干電磁波1，矽基板2在熱的平衡狀態下，以使 包含於雜質層3的雜質活性化的方式，將具有既定頻帶之 照射相干電磁波1往矽基板2照射。 在被照射具有既定頻帶之照射相干電磁波1照射之矽 基板2的固體結晶中，原子係呈不規則排列，而存在於結 晶晶格位置之原子間具有原子間力。該原子間力，由於係 相對於原子的微小位移，作爲依虎克（Hooke)定律之復 原力（彈力）而作用，因此，若藉由熱運動或由外部之強 制振動來使原子振動，則該原子之振動會傳導至相鄰之原 子而產生連鎖振動。此即所謂之晶格振動，由於係在固態 時被量子化，因此稱之爲晶格振動(phonon)。進而，原子 之質量、原子間距離、以及相當於復原力的彈性常數之原 子間力，由於係各物質而具有固定之値，因此，晶格振動 (phonon)之振動數與波數具有相互依存關係，此謂之分散 關係。 —----------- 未紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (後先閱讀t面之注意事項再填寫本頁) -------訂---------. A7 541628 __B7 __ 五、發明說明（7 ) (後先閱讀f*面之注意事項再填寫本頁) 在對固體結晶照射電磁波後之情況，由於局部的溫度 上升（熱結合）或介電分極的擾亂（光彈性結合），而產 生與光結合後之彈性偏移。若以該彈性偏移作爲外力，而 將在晶格振動(phonon)之振動數的領域之光（電磁波）照 射於固體結晶，則可藉由誘導喇曼（Raman)散亂，來激 發相位排列後之相干晶格振動(phonon)。 例如，若依據眾所周知之在矽單結晶中晶格振動之分 散關係（參考文獻，例如F·FavotandA·D·Corso,Phys· Rev· B 60, 11427 ( 1999) ·)，則晶格振動(phonon)之振動 數存在於10GHz〜ΙΟΤΗζ之間。 爲獲得在10GHz〜ΙΟΤΗζ之頻帶（微米波領域）內之 相干電磁波，而將以陀螺振子（gyrotnm)等之微米波振盪 管所得之微米波領域之相干電磁波照射於矽單結晶，藉由 相干電磁波之交換電場，使矽單結晶表面之介電分極產生 相干振動，藉此，來激發晶格振動(phonon)。 以相干電磁波源10所產生之入射相干電磁波12及以 照射光學系統11將入射相干電磁波12轉換爲照射相干電 磁波1，係以振盪頻率10GHz〜ΙΟΤΗζ之微米波帶電磁波所 構成。微米波帶電磁波，可將陀螺振子振盪管、調速振盪 管（klystron)乃至進行波管用於相干電磁波源10而產生 〇 構成往矽基板2照射之照射相干電磁波1之微米波帶 電磁波，具有對應於矽原子（構成矽基板2)與雜質間之 結合能量之頻帶。 氏張尺度適用中國國家標準（CNS)A4規格（210 X 29^公董1 A7 541628 ____B7___ 五、發明說明（〜） 當以振盪頻率爲10GHz以上、100GHz以下之微米波 帶電磁波所構成之照射相干電磁波1，往矽基板2照射時 ，則會直接激發矽原子之晶格振動(phonon)，在熱的非平 衡狀態下使雜質活性化，被活性化之雜質進行擴散，而形 成極薄接合層。 被活性化之雜質，係在熱的平衡狀態下，雜質實質上 未活性化程度之十分低的500°C以下之基板溫度而擴散。 因此，雜質不會往矽基板的深度作不必要的擴散。結果， 可形成接合深度爲大致20納米以下、1納米以上之極淺接 合層。 依以上所述之本實施形態，其係包含：再結晶步驟， 在被導入矽基板2之雜質未活性化之程度且十分低的基板 溫度下，使矽基板變爲熱的平衡狀態的方式來進行矽基板 2之熱處理，藉以使構成矽基板2之原子再結晶；及電磁 波照射步驟，於再結晶步驟之後，以將矽基板2保持在十 分低的基板溫度之狀態下，爲於熱的非平衡狀態下使雜質 活性化來形成極淺接合層，而以直接激發矽原子的晶格振 動(phonon)的方式，將具有既定頻帶之電磁波照射於砂基 板2。 因此，在熱的平衡狀態下，雜質實質上未活性化程度 之十分低的基板溫度，使雜質活性化，而被活性化之雜質 係在如此十分低的基板溫度下擴散。結果，由於可防止被 活性化之雜質往矽基板的深度作不必要的擴散，因此，可 形成接合深度淺的極淺接合層。 (讒先閱讀t面之注意事項再填寫本頁) •ϋ 1 1 n n n emmmw I ϋ ϋ ϋ- I ι 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 541628 A7 _____Β7_____ 五、發明說明（！丨） 又，在本實施形態，雖以使用矽基板2爲例，惟本發 明並未限於此。其亦可使用以形成有矽膜等之玻璃材料、 高分子材料等所構成之基板，或使用GaAs等之化合物半 導體基板。進而，亦可使用光阻等之光罩材料。 又，雖將照射相干電磁波1以微米波帶電磁波所構成 之例作說明，惟本發明並未限於此。照射相干電磁波1， 亦可以10GHz以上、ITHz以下之連續波輸出雷射光而構 成。連續波輸出雷射光，例如可將半導體雷射裝置用於相 干電磁波源10來產生。又，照射相干電磁波1，亦可以脈 衝寬爲10毫微微秒以上、1000毫微微秒以下（頻帶寬爲 ITHz以上〜100THZ以下）之超短脈衝雷射光而構成。超短 脈衝雷射光，例如可將鈦藍寶石（Titan Sapphire)雷射裝 置用於相干電磁波源10來產生。進而，照射相干電磁波1 ，亦可以前述超短脈衝雷射光、連續波輸出雷射光及微米 波帶電磁波任何兩者以上複合而構成。 當以具有10毫微微秒以上、1000毫微微秒以下之脈 衝寬之前述超短脈衝雷射光往矽基板2照射時，即使形成 於矽基板2之雜質層3的表面溶融，由於雜質層3之溶融 固化現象係隔熱且局部地產生，故不會有問題。此係由於 被照射之脈衝寬爲10毫微微秒以上、1000毫微微秒以下 ，因此，對矽基板2全體之溫度的影響小到可忽視之程度 〇 雖例示設於電磁波照射裝置8之室9內部係保持在不 活性化氣體之環境氣氛，惟亦可保持在1x1(T6Toit以下之 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (请先閱讀t面之注意事項再填寫本頁) 訂---------線‘ 541628 A7 ____B7_ ~ ----- 五、發明說明（A ) 真空度。此處，lTorr=133.322Pa。 雖例示以電熱爐4來對矽基板2進行熱處堙，惟亦可 利用燈管退火爐來進行熱處理。 如圖1及圖2所示，雖例示預先將形成有雜質層3之 矽基板2進行熱處理，惟亦可在電熱爐4之室14內^設置 離子源，並藉由該離子源將雜質導入於形成有雜質胃3 $ 前述矽基板2，來形成雜質層3。 圖4係表不本實施形態之極淺接合層形成方法之用以 進行再結晶步驟及電磁波照射步驟兩者之極淺接合層形成 裝置21之模式截面圖。參照圖2之前述電熱爐4之構成要 件及參照圖3之前述電磁波照射裝置8之構成要件，賦予 相同之參考符號。因此，省略該等構成要件之詳細說明。 極淺接合層形成裝置21具有室9Α。在室9Α內部設 置載置台13Α。在載置台13Α上，載置矽基板2，俾使雜 質層3形成於上側。在載置台UA形成使液體氮流通之未 圖示之流路，該液體氮係用以使矽基板2保持在被導入於 矽基板2之雜質’於熱的平衡狀態下未活性化程度之十分 低的基板溫度。在極淺接合層形成裝置21設置液體氮供給 裝置24，用以供給液體氮至載置台ΠΑ。在載置台13A設 置冷卻裝置23，用以控制流經形成於載置台13A之流路之 液體氮的溫度。 在室9A之一方側壁設置氣體導入管5，用以將氮氣導 入於室9A內部，而在室9A之另一方側壁設置氣體排出管 6，用以將室9A內部之氣體往室9A外部排出。 _____u---—- 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公董） (請先閱讀t面之注意事項再填寫本頁) 訂---------線· A7 541628 B7 五、發明說明（6 ) 在室9A內部設置紅外線燈管22，用以對被載置於載 置台13A上之砂基板2進行加熱。 極淺接合層形成裝置21具有相干電磁波源1〇。相干 電磁波源10，用以產生入射相干電磁波12。在室9設置照 明光學系統11，使其與形成於矽基板2 (載置於載置台 13A上）之雜質層3相對向。照明光學系統11，係將以相 干電磁波源10所產生之入射相干電磁波12轉換爲照射相 干電磁波1後，再往形成有雜質層3之矽基板2照射。 在如此所構成之極淺接合層形成裝置21，在將預先形 成雜質層3之矽基板2載置於室9A中之載置台13A上之 後，使氮氣流經氣體導入管5，再將其導入於室9A內部， 並使存在於室9A內部之氣體通過氣體排出管6而排出， 藉此，使室9A內部變爲氮氣之環境氣氛。 又，矽基板2之基板溫度，係在熱的平衡狀態下，形 成雜質實質上未活性化程度之十分低的700°C以下的方式 ，以紅外線燈管22對矽基板2進行加熱。例如，矽基板2 係在大致600°C的基板溫度，以大致5小時期間對矽基板2 加熱，俾形成熱的平衡狀態。構成加熱後之矽基板2的矽 原子’以大致600°C的基板溫度進行再結晶，並將構成矽 基板2 (導入有雜質）的砂原子所產生之晶格缺陷予以復 原。藉由該熱處理’將構成政基板2的砂原子再排列，並 消除矽原子所產生之晶格缺陷。 其次’由液體氮供給裝置24往形成於載置台13A (載 置有被施以前述熱處理後之矽基板2)之流路供給液體氮 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀f*面之注意事項再填寫本頁) 訂---------線· 541628 A7 ----------B7_ 五、發明說明（…） °又’藉由流經該流路之液體氮之熱傳導，俾在熱的平衡 狀態下’形成雜質實質上未活性化程度之十分低的5〇(rc &下的方式來保持矽基板2之基板溫度，而藉由冷卻裝置 23來冷卻流經流路(形成於載置台13A)之液體氮。 其後，藉由相干電磁波源10來產生入射相干電磁波 12 °照明光學系統11，係以確保往矽基板2照射之照射相 干電磁波1之照射均一性的方式，將入射相干電磁波12轉 換爲照射相干電磁波1，且於矽基板2在熱的非平衡狀態 下’以使包含於雜質層3之雜質活性化的方式，而對被冷 卻裝置23保持在500°C以下的基板溫度之矽基板2照射照 射相干電磁波1。照射相干電磁波1係與前述電磁波照射 裝置8同樣地，由10GHz以上、100GHz以下之微米波帶 電磁波所構成。 當由10GHz以上、100GHz以下之微米波帶電磁波所 構成之照射相干電磁波1，往矽基板2照射時，則直接激 發矽原子之晶格振動(phonon)，在熱的非平衡狀態下使雜 質活性化，被活性化之雜質進行擴散，而形成極薄接合層 〇 與前述電磁波照射裝置8同樣地，活性化之雜質係在 熱的平衡狀態下，雜質實質上未活性化程度之十分低的 500°C以下基板溫度進行擴散。因此，雜質不會往矽基板的 深度作不必要的擴散。結果，可形成接合深度爲大致2〇納 米以下、1納米以上之極淺接合層。 如此，依極淺接合層形成裝置21，可藉由單一之裝置 一 —-u--- 表紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公爱） (讒先閱讀f*面之注意事項再填寫本頁) ---I 1--訂---------線. 541628 A7 --- -B7_一 五、發明說明（K ) 來形成極淺接合層。又，雖例示藉由冷卻裝置23來冷卻流 經流路(形成於載置有矽基板2之載置台13A)之液體氮， 俾在熱的平衡狀態下，雜質實質上未活性化程度之十分低 的500°C以下的方式來保持矽基板2之基板溫度，惟亦可 藉由冷卻室9A全體，來將矽基板2之基板溫度保持在5〇〇 °C以下。 【產業上之可利用性】 如以上所述，依本發明，其可提供防止活性化之雜質 往基板的深部進行不必要之擴散之退火方法。 又’依本發明，其可提供形成接合深度淺的極薄接合 層之極淺接合層形成方法及極淺接合層形成裝置。 【符號說明】 (讒先閱讀t面之注意事項再填寫本頁) --I----訂---------- 1 照射相干電磁波 2 石夕基板 3 雜質層 4 電熱爐 5 氣體導入管 6 氣體排出管 7 加熱器 8 電磁波照射裝置 9 室 10 相干電磁波源 11 照射光學系統 12 入射相干電磁波 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 29Γ公釐） A7 541628 _B7 五、發明說明（4 ) 13 載置台 14 室 21 極淺接合層形成裝置 22 紅外線燈管 23 冷卻裝置 24 液體氮供給裝置 (請€閱讀犷面之注意事項再填寫本頁) -- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）XeCl excimer laser is a technique known as laser annealing after melting the surface of a silicon substrate and recrystallizing silicon atoms. Here, for example, heat treatment is performed by combining a laser annealing of 0.35 J / cm2 and RTA at 800 ° C for 10 seconds (Ref. Ken-ich Goto, p. 931-933, International Electron Device Meeting 1999 at Washington DC). However, the aforementioned conventional annealing technology using the solid state diffusion process by infrared rapid thermal treatment (RTA) under thermal equilibrium state is effective for activating the impurity doped layer, but the entire substrate system is at about 1000 ° C. Because of the high-temperature heating, there is a problem that the implanted impurities diffuse into the deep part of the substrate. For example, a boron-injection layer with a depth of 20 nanometers obtained at a low energy is subjected to rapid heating at 1000 ° C for 10 seconds, and the depth becomes 50 nanometers, which causes a problem of 2.5 times the depth before heating. Furthermore, in the LSI process in which a plurality of impurity introduction procedures are required, and the conventional heat treatment technology is used, since the entire substrate is heated by the high temperature of the impurity diffusion, there is a problem that the impurity diffuses to a position where the diffusion is not required. Furthermore, although the aforementioned conventional technique of irradiating the excimer laser can suppress the unnecessary diffusion of the depth of the substrate to a considerable extent, it is impossible to make a lattice generated by the atoms constituting the substrate into which the impurity is introduced. The defect is sufficiently restored, so that a transistor formed in the manufactured semiconductor device has a problem that a leakage current becomes large. The present invention has been made to solve the problems described above, and an object thereof is to provide an annealing method that can prevent activated impurities from being diffused unnecessarily into a deep portion of a substrate. ........... «Α ---- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (It is recommended that you read the precautions on the t side before filling out this page) --IIIII Order · 111111 I-* 5 ^. 541628 A7 ____B7___ V. Description of the invention ($) (谗 Please read the notes on the t side before filling out this page) The other purpose of the present invention is to provide a shallow joint depth. Method for forming extremely shallow bonding layer and device for forming extremely shallow bonding layer. [Disclosure of the invention] The annealing method of the present invention is a method for annealing a substrate introduced with impurities, and is characterized in that it includes a recrystallization step in which the aforementioned impurities introduced into the substrate are not activated and are very low. Heat treatment of the substrate in such a manner that the substrate becomes a thermal equilibrium state so as to recrystallize the atoms constituting the substrate; and an electromagnetic wave irradiation step 'after the recrystallization step' to hold the substrate in question In the state where the substrate temperature is very low, in order to activate the aforementioned impurities in a thermal non-equilibrium state, an electromagnetic wave having a predetermined frequency band will be excited by directly exciting the lattice phonon of the aforementioned atom. The substrate is irradiated. In the foregoing, the so-called lattice vibration (phonon) is caused by thermal movement or forced movement from the outside, and the small displacement relative to the atom between the atoms existing in the crystal lattice position is used as Ehuk ( Hooke) law's reducing force (elastic force) caused by the interatomic force caused by the atomic vibration, is the conduction of adjacent atoms to form a continuous vibration. The method for forming an extremely shallow bonding layer of the present invention is a method for forming an extremely shallow bonding layer to form an extremely shallow bonding layer on a semiconductor substrate into which impurities are introduced, and is characterized by including a recrystallization step in which the semiconductor substrate is introduced into the semiconductor substrate. Conducting the heat treatment of the semiconductor substrate in such a way that the aforementioned impurities are not activated and the substrate temperature is very low, so that the semiconductor atoms constituting the semiconductor substrate are recrystallized; and electromagnetic wave irradiation Step, after the aforementioned recrystallization step, to apply -§ --- the size of the paper to the Chinese National Standard (CNS) A4 (210 X 297 mm) 541628 A7 V. Description of the invention (i) The semiconductor substrate is held at In the state of the aforementioned very low substrate temperature, in order to activate the impurities in a thermally unbalanced state to form a very shallow bonding layer, and to directly excite the lattice vibration of the semiconductor atoms (phonon). : 'Irradiate an electromagnetic wave having a predetermined frequency band to the aforementioned semiconductor substrate 0, and the aforementioned so-called very shallow bonding layer is formed The diffusion layer provided in the transistor of the semiconductor device has a bonding depth of approximately 20 nanometers or less and 1 nanometer or more. The ultra-shallow bonding layer forming device of the present invention is used to form an extremely shallow semiconductor substrate on which a impurity t is introduced. The device for forming a very shallow bonding layer of a bonding layer is characterized by having a recrystallization mechanism that makes the semiconductor substrate become thermally balanced at a very low substrate temperature to the extent that the impurities introduced into the semiconductor substrate are not activated. Heat treatment of the semiconductor substrate to recrystallize the semiconductor atoms constituting the semiconductor substrate; and an electromagnetic wave irradiation mechanism, in which the recrystallized thick semiconductor substrate is held at the very low substrate by the recrystallization mechanism. In the state of temperature, in order to activate the aforementioned impurities in a thermally unbalanced state to form a very shallow bonding layer, the electromagnetic waves having a predetermined frequency band are irradiated in such a manner as to directly excite the phonon of the semiconductor atoms. On the aforementioned semiconductor substrate. [Brief description of the drawings] FIG. 1 is a cross-sectional view showing a semiconductor substrate into which impurities are introduced in this embodiment. Figure 2 shows the electric furnace used for the recrystallization step in this embodiment (谗 Please read the precautions on the t side before filling this page)-Order -------- Line _ This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) A7 541628 __B7 _ V. A schematic sectional view of the description of the invention (r). Fig. 3 is a schematic cross-sectional view showing an electromagnetic wave irradiation device for performing an electromagnetic wave irradiation step in this embodiment. Fig. 4 is a schematic cross-sectional view showing an extremely shallow bonding layer forming apparatus for performing both a recrystallization step and an electromagnetic wave irradiation step in this embodiment. [Preferred Embodiment of the Invention] In the method for forming an extremely shallow bonding layer according to the present invention, it is preferable that the semiconductor substrate is composed of either silicon or a silicon compound. In this system, a semiconductor device formed on a silicon substrate can be obtained. In the aforementioned recrystallization step, it is preferred that the semiconductor substrate is heat-treated at a substrate temperature of 700 ° C or lower. This is because the impurities introduced into the semiconductor substrate do not activate the substrate at a very low temperature in a thermal equilibrium state. In the aforementioned recrystallization step, the semiconductor substrate is preferably heat-treated with one of an electric heating furnace and a lamp heating furnace ^. Because of this simple structure, heat treatment can be performed. In the aforementioned electromagnetic wave irradiation step, it is preferable that the aforementioned electromagnetic wave to be irradiated includes ultra-short pulse laser light having a pulse width of 10 femtoseconds or more and 1000 femtoseconds or less, and more preferably, it includes 10GHz or more and ITHz or less. The continuous wave output laser light with a frequency bandwidth is preferably a millimeter wave band electromagnetic wave having an oscillation frequency above 10 GHz and below 100 GHz. In the aforementioned electromagnetic wave irradiation step, it is preferable that the electromagnetic wave to be irradiated has a frequency band corresponding to a binding energy between the semiconductor atom and the impurity. This is because it can excite the lattice vibration of semiconductor atoms more accurately. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (常 Please read the precautions for the regular surface before filling out this page) Order- ------- Line · A7 541628 ___B7__ 5. The ancient description of the phonon. In the electromagnetic wave irradiation step, the semiconductor substrate is preferably irradiated with the electromagnetic wave while cooling the semiconductor substrate while maintaining the semiconductor substrate at the very low substrate temperature. By this cooling, since the semiconductor substrate can be surely kept in a thermal equilibrium state, the substrate temperature to which the impurities are substantially inactivated is extremely low, and therefore, the activated impurities can be reliably prevented from reaching deep portions of the semiconductor substrate. Necessary proliferation. Hereinafter, this embodiment will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a silicon substrate 2 into which impurities are introduced in this embodiment. An impurity layer 3 is formed on the surface of the silicon substrate 2. The impurity layer 3 is formed by introducing impurities into the silicon substrate 2 by an ion implantation method or a plasma doping method, for example. Fig. 2 is a schematic cross-sectional view showing an electric heating furnace 4 for performing the recrystallization step in this embodiment. The electric heating furnace 4 has a chamber 14. Inside the chamber 14, a silicon substrate 2 in which impurities are formed in advance is housed. A heater 7 is provided in the chamber 14 to heat the silicon substrate 2 accommodated in the chamber 14. A gas introduction pipe 5 is provided on one side wall of the chamber 14 to introduce nitrogen (N2) into the inside of the chamber ，, and a gas discharge pipe 6 is provided on the other side wall of the chamber 14 to guide the gas inside the chamber 14 to the outside of the chamber Η discharge. In the electric heating furnace 4 thus constructed, after the silicon substrate 2 in which impurities have been formed in advance is housed in the chamber 14, nitrogen (N2) is passed through the gas introduction pipe 5 and introduced into the chamber 14 'to exist in the chamber. The hot body inside 14 passes through the gas exhaust pipe 6, whereby an ambient atmosphere of nitrogen (N2) is formed inside the chamber 14. The paper size of the table applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (谗 Please read the precautions on the f * face before filling this page)-541628 A7 __B7__ V. Description of the invention (1) In addition, the silicon substrate 2 The substrate temperature is that the sand substrate 2 is heated by the heater 7, so that the silicon substrate 2 is formed in a thermally balanced state to form a very low degree of impurity inactivation below 700 ° C. For example, the silicon substrate 2 is at a substrate temperature of approximately 600 ° C, and the silicon substrate 2 is heated in a period of approximately five hours, thereby becoming a thermal equilibrium state. The sand atoms constituting the heated silicon substrate 2 are recrystallized at a substrate temperature of 600 ° C, and the lattice defects generated by the silicon atoms constituting the silicon substrate 2 (with impurities introduced therein) are restored. By this heat treatment, the silicon atoms constituting the silicon substrate 2 are rearranged, and lattice defects generated by the silicon atoms are eliminated. The main point of this heat treatment is the temperature of the substrate when the silicon atoms are recrystallized, and in a thermal equilibrium state, the formed impurities are substantially 700 ° C or lower, which is substantially inactive. Fig. 3 is a schematic cross-sectional view of the electromagnetic wave irradiation device 8 for performing the electromagnetic wave irradiation step of this embodiment. The electromagnetic wave irradiation device 8 includes a chamber 9. A mounting table 13 is provided inside the chamber 9. The silicon substrate 2 which has been heat-treated in the electric heating furnace 4 is placed on the mounting table 13 so that the impurity layer 3 is formed on the silicon substrate 2. The electromagnetic wave irradiation device 8 includes a coherent electromagnetic wave source 10. The coherent electromagnetic wave source 10 generates an incident coherent electromagnetic wave 12. In the chamber 9, the irradiation optical system 11 is installed so as to face the impurity layer 3 formed on the silicon substrate 2 (mounted on the mounting table 13). The irradiation optical system 11 converts the incident coherent electromagnetic wave 12 generated by the coherent electromagnetic wave source 10 into a coherent electromagnetic wave 1 and irradiates the silicon substrate 2 on which the impurity layer 3 is formed. The irradiation optical system 11 is composed of predetermined optical members necessary to ensure the uniformity of irradiation of the irradiation coherent electromagnetic waves 1 irradiated onto the silicon substrate 2. In Room 9 (谗 Please read the precautions on the t side before filling in this page) Order --------- Line_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 541628 A7 __ __ B7 —_ 5. Description of the invention (g) 'For example, to maintain an ambient atmosphere of nitrogen, helium, argon and other inert gases. In the electromagnetic wave irradiation device 8 thus constituted, if the silicon substrate 2 which has been heat-treated at the substrate temperature of approximately 600 ° C. by the electric heating furnace 4 is placed inside the chamber 9 (maintained in an inert gas atmosphere) On the mounting table 13, the substrate temperature of the silicon substrate 2 is kept at a very low temperature of 500 ° C. or less under the condition of thermal equilibrium. The coherent electromagnetic wave source 10 generates an incident coherent electromagnetic wave 12. The irradiation optical system 11 converts the incident coherent electromagnetic wave 12 into the irradiated coherent electromagnetic wave 1 in a manner to ensure the uniformity of irradiation of the irradiated coherent electromagnetic wave 1 to the silicon substrate 2. The silicon substrate 2 is in a thermal equilibrium state so that The method for activating the impurities in the impurity layer 3 is to irradiate the silicon substrate 2 with an irradiation coherent electromagnetic wave 1 having a predetermined frequency band. In a solid crystal irradiated with a silicon substrate 2 irradiated with an irradiated coherent electromagnetic wave 1 having a predetermined frequency band, the atomic system is irregularly arranged, and there is an interatomic force between atoms existing at the crystal lattice position. This interatomic force acts as a restoring force (elastic force) according to Hooke's law because it is a small displacement relative to the atom. Therefore, if the atom is vibrated by thermal motion or external forced vibration, then The vibration of this atom will be transmitted to adjacent atoms to produce chain vibration. This is the so-called lattice vibration. Since it is quantized in the solid state, it is called phonon. Furthermore, the mass of the atom, the distance between the atoms, and the interatomic force corresponding to the elastic constant of the restoring force are fixed due to each substance. Therefore, the vibration number and wave number of the phonon are interdependent. Relationship, this is the decentralized relationship. —----------- The Chinese standard (CNS) A4 specification (210 X 297 mm) is applied to the paper size (please read the precautions on the t side before filling in this page) ----- --Order ---------. A7 541628 __B7 __ V. Description of the invention (7) (Read the precautions on the f * face before filling in this page) After the solid crystal is irradiated with electromagnetic waves, The local temperature rise (thermal bonding) or the perturbation of the dielectric polarization (photoelastic bonding) results in an elastic shift after combining with light. If the elastic deviation is used as an external force, and the light (electromagnetic wave) in the field of the number of vibrations of the phonon is irradiated to the solid crystal, the phase alignment can be stimulated by inducing Raman scattering. The subsequent coherent lattice vibration (phonon). For example, if according to the well-known dispersion relationship of lattice vibration in silicon single crystals (references, such as F. Favotand A. D. Corso, Phys. Rev. B 60, 11427 (1999) ·), then the lattice vibration (phonon ) The vibration number exists between 10 GHz and 10 ΤΗζ. In order to obtain coherent electromagnetic waves in a frequency band (microwave field) of 10 GHz to 10 ΤΗζ, a silicon single crystal is irradiated with a coherent electromagnetic wave in a microwave field obtained by a microwave oscillator tube such as a gyrotnm (gyrotnm). The exchange electric field causes coherent vibration of the dielectric poles on the surface of the silicon single crystal, thereby exciting the phonon. The incident coherent electromagnetic wave 12 generated by the coherent electromagnetic wave source 10 and the irradiation optical system 11 are used to convert the incident coherent electromagnetic wave 12 into the irradiated coherent electromagnetic wave 1 and are composed of a microwave band electromagnetic wave with an oscillation frequency of 10 GHz to 10 ΤΗζ. Microwave band electromagnetic waves can be generated by using a gyro oscillator tube, a klystron, or a wave tube for a coherent electromagnetic wave source 10, which constitutes a microwave band electromagnetic wave that irradiates the silicon substrate 2 with a coherent electromagnetic wave 1 and has a corresponding response. The frequency band of the bonding energy between silicon atoms (constituting the silicon substrate 2) and impurities. The Zhang scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 29 ^ Public Manager 1 A7 541628 ____B7___) V. Description of the invention (~) When the irradiation coherence is composed of electromagnetic waves with a micron wave band with an oscillation frequency of 10 GHz to 100 GHz When the electromagnetic wave 1 is irradiated onto the silicon substrate 2, it will directly excite the phonon of the silicon atoms, activate the impurities in a thermal non-equilibrium state, and diffuse the activated impurities to form an extremely thin bonding layer. Activated impurities are diffused at a substrate temperature below 500 ° C, which is very low, in a thermal equilibrium state. The impurities do not diffuse unnecessarily to the depth of the silicon substrate. As a result, an extremely shallow bonding layer having a bonding depth of approximately 20 nm or less and 1 nm or more can be formed. According to the embodiment described above, it includes a recrystallization step, and impurities that are introduced into the silicon substrate 2 are inactive. At a very low substrate temperature, the silicon substrate 2 is heat-treated in such a manner that the silicon substrate becomes a thermal equilibrium state, so that the atoms constituting the silicon substrate 2 are re-junctioned. And an electromagnetic wave irradiation step, after the recrystallization step, to maintain the silicon substrate 2 at a very low substrate temperature, to activate the impurities in a thermally unbalanced state to form a very shallow bonding layer, and directly The method of exciting the lattice vibration of silicon atoms (phonon) irradiates electromagnetic waves with a predetermined frequency band to the sand substrate 2. Therefore, in a thermal equilibrium state, the impurities are substantially inactivated at a substrate temperature that is very low, so that the impurities Activated and activated impurities diffuse at such a very low substrate temperature. As a result, since the activated impurities can be prevented from diffusing unnecessarily to the depth of the silicon substrate, a very shallow junction depth can be formed. Shallow bonding layer. (谗 Please read the notes on the t side before filling in this page) • ϋ 1 1 nnn emmmw I ϋ ϋ ϋ- I ι This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 541628 A7 _____ Β7 _____ 5. Description of the invention (! 丨) In this embodiment, although the silicon substrate 2 is used as an example, the present invention is not limited to this. It can also be used to form silicon Substrates made of glass materials such as films, polymer materials, etc., or compound semiconductor substrates such as GaAs. Furthermore, photoresist materials such as photoresist can also be used. In addition, coherent electromagnetic waves 1 will be irradiated in the microwave band. The structure example is described, but the present invention is not limited to this. The coherent electromagnetic wave 1 may be irradiated with a continuous wave output laser light above 10 GHz and below IT Hz. The continuous wave output laser light may be used for a semiconductor laser device, for example. It is generated from the coherent electromagnetic wave source 10. Furthermore, the coherent electromagnetic wave 1 can be irradiated with ultra-short pulse laser light with a pulse width of 10 femtoseconds or more and 1000 femtoseconds or less (frequency bandwidth from ITHz to 100THZ). The ultra-short pulse laser light can be generated by using a Titan Sapphire laser device for the coherent electromagnetic wave source 10, for example. Furthermore, the coherent electromagnetic wave 1 may be irradiated, and it may be formed by combining any two or more of the ultra-short pulse laser light, the continuous wave output laser light, and the micro-wave band electromagnetic wave. When the silicon substrate 2 is irradiated with the aforementioned ultra-short pulse laser light having a pulse width of more than 10 femtoseconds and less than 1000 femtoseconds, even if the surface of the impurity layer 3 formed on the silicon substrate 2 is melted, The melt-solidification phenomenon is thermally insulated and locally generated, so there is no problem. This is because the pulse width to be irradiated is 10 femtoseconds or more and 1000 femtoseconds or less. Therefore, the influence on the temperature of the entire silicon substrate 2 is small to a negligible degree. The interior is kept in an atmosphere of inert gas, but it can also be maintained at 1x1 (the paper size of the table below T6Toit applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)) (Please read the precautions on t side first) (Fill in this page again) Order --------- line '541628 A7 ____B7_ ~ ----- V. Description of the invention (A) Vacuum degree. Here, lTorr = 133.322Pa. Although it is exemplified by electric heating furnace 4 The silicon substrate 2 is thermally treated, but a lamp annealing furnace can also be used for heat treatment. As shown in FIG. 1 and FIG. 2, although the silicon substrate 2 on which the impurity layer 3 is formed is heat-treated in advance, it is also possible to perform heat treatment. An ion source is set in the chamber 14 of the electric heating furnace 4, and the impurity is introduced into the silicon substrate 2 on which the impurity stomach 3 is formed by the ion source to form the impurity layer 3. Fig. 4 shows the pole of this embodiment. Method for forming shallow bonding layer for performing recrystallization step and electromagnetic wave irradiation step 2 are schematic sectional views of the extremely shallow bonding layer forming device 21. The same reference numerals are assigned to the constituent elements of the aforementioned electric heating furnace 4 of FIG. 2 and the aforementioned constituent elements of the electromagnetic wave irradiation apparatus 8 of FIG. 3, and therefore are omitted. These components are described in detail. The super shallow bonding layer forming device 21 includes a chamber 9A. A mounting table 13A is provided inside the chamber 9A. A silicon substrate 2 is mounted on the mounting table 13A so that the impurity layer 3 is formed on the upper side. The mounting table UA forms an unillustrated flow path through which liquid nitrogen flows. The liquid nitrogen is used to keep the silicon substrate 2 at a level of inactivation of impurities introduced into the silicon substrate 2 under a thermal equilibrium state. The temperature of the substrate is provided. A liquid nitrogen supply device 24 is provided in the extremely shallow bonding layer forming device 21 to supply liquid nitrogen to the mounting table ΠA. A cooling device 23 is provided in the mounting table 13A to control the flow passing through the formation table 13A. The temperature of liquid nitrogen in the road. A gas introduction pipe 5 is provided on one side wall of the chamber 9A to introduce nitrogen into the inside of the chamber 9A, and a gas discharge pipe 6 is provided on the other side wall of the chamber 9A to use the chamber 9A. The gas from the Ministry is discharged to the outside of the chamber 9A. _____ u ------ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) (please read the precautions on t side before filling out this page) Order- -------- Line · A7 541628 B7 V. Description of the invention (6) An infrared lamp tube 22 is provided inside the chamber 9A to heat the sand substrate 2 placed on the mounting table 13A. Very shallow The bonding layer forming device 21 has a coherent electromagnetic wave source 10. The coherent electromagnetic wave source 10 is used to generate incident coherent electromagnetic waves 12. An illumination optical system 11 is provided in the chamber 9 so as to be formed on a silicon substrate 2 (mounted on a mounting table 13A). ) 'S impurity layer 3 is opposite. The illumination optical system 11 converts the incident coherent electromagnetic wave 12 generated by the coherent electromagnetic wave source 10 into the irradiated coherent electromagnetic wave 1 and then irradiates the silicon substrate 2 on which the impurity layer 3 is formed. In the extremely shallow bonding layer forming device 21 configured as described above, after the silicon substrate 2 on which the impurity layer 3 is formed in advance is placed on the mounting table 13A in the chamber 9A, nitrogen gas is passed through the gas introduction pipe 5 and then introduced. Inside the chamber 9A, the gas existing inside the chamber 9A is exhausted through the gas exhaust pipe 6, thereby changing the inside of the chamber 9A into an ambient atmosphere of nitrogen. In addition, the substrate temperature of the silicon substrate 2 is such that the silicon substrate 2 is heated by the infrared lamp 22 in a manner that the impurities are substantially inactivated to a temperature of 700 ° C or lower in a thermal equilibrium state. For example, the silicon substrate 2 is heated at a substrate temperature of approximately 600 ° C. for approximately 5 hours to form a thermal equilibrium state. The silicon atoms' constituting the heated silicon substrate 2 are recrystallized at a substrate temperature of approximately 600 ° C, and lattice defects generated by the sand atoms constituting the silicon substrate 2 (with impurities introduced therein) are restored. By this heat treatment, the sand atoms constituting the political substrate 2 are rearranged, and lattice defects generated by the silicon atoms are eliminated. Secondly, the liquid nitrogen supply device 24 is used to supply the liquid nitrogen meter to the flow path formed on the mounting table 13A (on which the silicon substrate 2 subjected to the aforementioned heat treatment is applied). The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on f * before you fill out this page) Order --------- line · 541628 A7 ---------- B7_ V. Description of the invention (... ) ° Then, through the heat conduction of liquid nitrogen flowing through the flow path, 俾 in the state of thermal equilibrium, 'the impurities are substantially inactivated to form a very low 50 ° (rc & way) to maintain the silicon substrate The temperature of the substrate is 2 and the liquid nitrogen flowing through the flow path (formed on the mounting table 13A) is cooled by the cooling device 23. Thereafter, the coherent electromagnetic wave source 10 is used to generate the incident coherent electromagnetic wave 12 °. Illumination optical system 11, In order to ensure the uniformity of irradiation of the irradiated coherent electromagnetic wave 1 to the silicon substrate 2, the incident coherent electromagnetic wave 12 is converted into the irradiated coherent electromagnetic wave 1 and the silicon substrate 2 is 'in a thermally unbalanced state' so as to be contained in the impurity layer 3 impurity activation method, while the cooled device 23 is kept at 500 The silicon substrate 2 at a substrate temperature of below ° C is irradiated with a coherent electromagnetic wave 1. The coherent electromagnetic wave 1 is irradiated with a microwave band electromagnetic wave of 10 GHz or more and 100 GHz or less as in the aforementioned electromagnetic wave irradiation device 8. When composed of 10 GHz or more and 100 GHz or less, The following coherent electromagnetic wave 1 composed of the following micro-wave band electromagnetic waves, when irradiated to the silicon substrate 2, directly stimulates the lattice vibration of the silicon atoms (phonon), and activates impurities in a thermal non-equilibrium state and is activated. Impurities are diffused to form an extremely thin bonding layer. Similar to the electromagnetic wave irradiation device 8 described above, the activated impurities are in a thermal equilibrium state, and the impurities are substantially inactivated at a substrate temperature of 500 ° C or lower, which is very low. Diffusion. Therefore, impurities do not diffuse unnecessarily to the depth of the silicon substrate. As a result, an extremely shallow bonding layer having a bonding depth of approximately 20 nm or less and 1 nm or more can be formed. ， Using a single device —-u --- The paper size is applicable to China National Standard (CNS) A4 (210 x 297 public love) (谗 read first f * Notes on this page, please fill out this page again) --- I 1--Order --------- line. 541628 A7 --- -B7_ 一 五 、 Invention description (K) to form very shallow The bonding layer. Although the liquid nitrogen flowing through the flow path (formed on the mounting table 13A on which the silicon substrate 2 is mounted) is cooled by the cooling device 23, the impurities are substantially inactivated in a thermal equilibrium state. The substrate temperature of the silicon substrate 2 is kept at a very low degree of 500 ° C or less, but the substrate temperature of the silicon substrate 2 can also be kept below 500 ° C by the entire cooling chamber 9A. [Industrial Applicability] As described above, according to the present invention, it is possible to provide an annealing method that prevents activated impurities from being diffused unnecessarily into the deep part of the substrate. According to the present invention, it is possible to provide an extremely shallow bonding layer forming method and an extremely shallow bonding layer forming apparatus for forming an extremely thin bonding layer with a shallow bonding depth. [Symbol] (谗 Please read the precautions on the t side before filling in this page) --I ---- Order ---------- 1 Irradiate coherent electromagnetic waves 2 Shi Xi substrate 3 Impurity layer 4 Electric furnace 5 Gas introduction pipe 6 Gas discharge pipe 7 Heater 8 Electromagnetic wave irradiation device 9 Room 10 Coherent electromagnetic wave source 11 Irradiation optical system 12 Incident coherent electromagnetic wave The paper size applies the Chinese National Standard (CNS) A4 (21〇X 29Γmm) A7 541628 _B7 V. Description of the invention (4) 13 Mounting table 14 Room 21 Very shallow bonding layer forming device 22 Infrared lamp tube 23 Cooling device 24 Liquid nitrogen supply device (please read the precautions on the front side and fill out this page)-this Paper size applies to China National Standard (CNS) A4 (210 X 297 mm)