TW538257B

TW538257B - Microlithography projection objective

Info

Publication number: TW538257B
Application number: TW090118732A
Authority: TW
Inventors: Hans-Jurgen Mann; Udo Dinger; Michael Muhlbeyer
Original assignee: Zeiss Stiftung
Priority date: 2000-08-01
Filing date: 2001-08-01
Publication date: 2003-06-21
Also published as: JP2002107630A; KR20020011340A; KR100787525B1

Abstract

There is provided a microlithography projection objective for short wavelengths, with an entrance pupil and an exit pupil for imaging an object field in an image field, which represents a segment of a ring field, in which the segment has an axis of symmetry and an extension perpendicular to the axis of symmetry and the extension is at least 20mm. The objective comprises a first (S1), a second (S2), a third (S3), a fourth (S4), a fifth (S5) and a sixth minor (S6) in centered arrangement relative to an optical axis. Each of these mirrors have an off-axis segment, in which the light beams traveling through the projection objective impinge. The diameter of the off-axis segment of the first, second, third, fourth, fifth and sixth mirrors as a function of the numerical aperture NA of the objective at the exit pupil is <= 1200 mm*NA.

Description

538257 五、發明說明（1) &本發明係有關一種如申請專利範圍第1項前言部份之微影術物鏡，一種如申請專利範圍第21項之投影曝光設備及一種如申請專利範圍第2 2項之晶片製造方法。波長<193 nm的微影術，尤其是λ=11 nm或λ=ΐ3 ηπι的 EUV彳政影術被討論作為使〈1 3 〇 nm之結構成像的可能技術。此種微影術系統的解析度可以下述公式表示：驗Ί 其中k!代表 >(政影術程序的比參數，a代表入射光波長，n a 代表系統像側數值孔徑。 EUV範圍成像系統可使用之光學元件基本上為多層反射系統。入=1111111時多層反射系統最好是^1〇/66系統，入= 1 3 n m時最好是Μ 〇 / S i系統。數值孔徑為0 · 2時，以1 3 nm的光使5 0 nm結構成像需使匕=0· 77，以11 nm的光使35 nm結構成像則需使4 = 0.64。 t 由於所使用多塗層的反射率只約為70%，故以最少之EUV 投影物鏡光學元件達到足夠的光強度對EUV微影術投影物鏡極為重要。六反射鏡被發現特別可達到高光強度及可校正NA = 0. 2 0時的成像誤差。曾提出使用六反射鏡於微影術的專利為US-A-5 153 898，EP-A-0 252 734，ΕΡ + 0 94 7 882，US-A-5686728, EP 0 779 528， US 5 815 310， WO 99/57606及US 6 033538257 V. Description of the invention (1) & The present invention relates to a lithography objective lens such as the foreword part of the scope of patent application, a projection exposure device such as the scope of patent application, and a projection exposure equipment such as 2 The method for manufacturing a wafer of 2 items. Lithoscopy with a wavelength of <193 nm, and in particular EUV microscopy with λ = 11 nm or λ = ΐ3 ηπm, are discussed as a possible technique for imaging a structure of <130 nm. The resolution of this lithography system can be expressed by the following formula: Ί where k! Represents > (the ratio of the political shadowing program, a represents the wavelength of incident light, and na represents the numerical aperture of the image side of the system. The usable optical element is basically a multilayer reflection system. The multilayer reflection system is preferably a ^ 10/66 system when the value is 11111111, and the MIMO / Si system is the best when the value is 13 nm. The numerical aperture is 0 · At 2 o'clock, imaging of a 50 nm structure with 13 nm light requires 0 = 77, and imaging of a 35 nm structure with 11 nm light requires 4 = 0.64. T Due to the reflectivity of the multiple coatings used It is only about 70%, so it is very important for EUV lithography projection objectives to achieve sufficient light intensity with the minimum number of EUV projection objective optical elements. Six mirrors were found to achieve particularly high light intensity and correctable NA = 0.20 US-A-5 153 898, EP-A-0 252 734, EP + 0 94 7 882, US-A-5686728, EP 0 779 528 , US 5 815 310, WO 99/57606 and US 6 033

C:\2D-C0DE\90-10\90118732.ptd 第4頁 538257 五、發明說明（2) 079 ° 專利US-A - 5 686 728提出之微影術投影系統具一六反射鏡投影物鏡，每一反射鏡反射面均為非球面。反射鏡沿一共同的光軸適當設置，而使得光程無遮攔。由於專利US-A-5 686 728提出之投影物鏡只可使用於波長1 00 - 3 0 0 nm的UV光，故此投影物鏡之反射鏡非球面度極高，約為+ /-50 /zm，且入射角極大，約為38。。即使縮小光闌至N A = 0 · 2，非球面度仍為2 5 // m且入射角幾乎無縮小。由於對反射鏡表面品質及反射率的高要求，此種非球面度與入射角無法應用於EUV範圍。C: \ 2D-C0DE \ 90-10 \ 90118732.ptd Page 4 538257 V. Description of the invention (2) 079 ° The lithography projection system proposed by the patent US-A-5 686 728 has a six-reflector projection objective, The reflecting surface of each mirror is aspheric. The mirrors are appropriately arranged along a common optical axis so that the optical path is not blocked. Since the projection objective proposed by patent US-A-5 686 728 can only be used for UV light with a wavelength of 100-300 nm, the asphericity of the projection objective lens is extremely high, about +/- 50 / zm, And the angle of incidence is extremely large, about 38. . Even if the diaphragm is reduced to N A = 0 · 2, the asphericity is still 2 5 // m and the incident angle is hardly reduced. Due to the high requirements for mirror surface quality and reflectivity, such asphericity and incident angle cannot be applied in the EUV range.

V 專利US-A- 5 686 728所提出無法應用於λ< 100 nm，尤其是波長11及1 3 nm，之物鏡的另一缺點為，晶圓與最接近晶圓之反射鏡間的距離小。專利US-A-5 686 728所提出晶圓到最接近晶圓之反射鏡的距離極小。由於波長丨丨nm 及1 3 nm多層系統的塗層應力，此種反射鏡極不穩定。專利ΕΡ-Α-0 779 528將一種具六反射鏡之投影物鏡應用於E U V微影術中’尤其是波長11 n m及1 3 n m。此種投影物鏡的缺點在於，至少兩反射鏡具極高非球面度，為26或18.5 vm。專利EP-A-0 77 9 528所提出晶圓到最接近晶圓之反射鏡的光學自由工作距離亦極小，而會導致不穩定或負面之機械自由工作距離。專利WO 9 9/5760 6提出一種EUV微影術之六反射鏡投影物鏡，其反射鏡依序為凹面、凹面、凸面、凹面、凸面、凹面，物側數值孔徑NaQbject = 〇·2。專利WO 99/57606所有反V-patent US-A-5 686 728 proposes that objective lenses that cannot be applied to λ <100 nm, especially at wavelengths 11 and 13 nm. Another disadvantage is that the distance between the wafer and the mirror closest to the wafer is small. . Patent US-A-5 686 728 proposes that the distance from the wafer to the mirror closest to the wafer is extremely small. Such mirrors are extremely unstable due to the coating stresses of the wavelength 丨 nm and 13 nm multilayer systems. The patent EP-A-0 779 528 applies a projection objective with six mirrors to EUV lithography ', especially with wavelengths of 11 nm and 13 nm. The disadvantage of this type of projection objective is that at least two mirrors have extremely high asphericity, either 26 or 18.5 vm. Patent EP-A-0 77 9 528 proposes that the optical free working distance from the wafer to the mirror closest to the wafer is also very small, which may lead to unstable or negative mechanical free working distance. Patent WO 9 9/5760 6 proposes a six-mirror projection objective lens for EUV lithography, the reflectors of which are sequentially concave, concave, convex, concave, convex, and concave, and the object-side numerical aperture NaQbject = 0.2. Patent WO 99/57606

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第5頁 538257 五、發明說明（3) 射鏡皆為非球面。專利W0 99/57606所提出六反射鏡物鏡的缺點為，無、、輕易接近有效範圍以鑲嵌反射鏡，尤其是第二及第=、、、法鏡。此外’專利W〇 99/5 760 6所提出系統第四反射鏡的反射效範圍在光軸之外甚遠。如此使得反射鏡系統的穩兄性此種反射鏡的製造產生問題。此處需要一大空間^包步/ 統。由於系統使用於真空，需要將相當大的空間抽系空。專利WO 99/5760 6所提出系統設在第二與第： /、間的光闌導致第三反射鏡入射角大，尤其是大於反射鏡專利US Θ 0 33 0 79提出一種六反射鏡系統，其的入射角皆小於1 8。。但此系統的缺點亦為，第一子鏡的有效範圍不能被接近，且各反射鏡，：鏡的有效範圍極…致系統需要一大空間，而=’ 將相當大的空間抽成真$。反射鏡相當大—缺=需需要大的塗層室及製造機械。缺^為’ 本發明之目的因此在於提供一種適合於1 〇〇 nm，之微影術的投影物鏡，其不具上二最好是小缺點，尤其是一種投影物鏡，其尺寸最^ ,二二知技術之有效範圍可被輕易接近’且孔徑最大，：像：：J 3之性最高。从1豕决差的可校正本目的依據本發明因一短波長，尤其影術投影物鏡而達成，該投影物女=M nm ,之微射光瞳，以將一物場成像於一像場，；：u -出環形場具-對稱轴與-垂直於對稱轴ϋ;::;至:: C:\2D-CODE\9iM0\90118732.ptd 第6頁 538257 五、發明說明（4) —-- f2〇丄最好是25 _，投影物鏡並設有一第一、一第二、一第=、一第四、一第五、一第六反射鏡，其對中光軸設置，每一反射鏡皆具一有效範圍，穿過投影物鏡的光束射入該有效範圍，第一、第二、第三、第四、第五、第六反射鏡有效圍的直徑受出射光瞳數值孔徑左右$丨2 〇〇 mm NA，最好是$ 3 00 mm，該出射光瞳數值孔徑大於〇.工，最好是大於0.2，尤其最好是大於〇·23。本發明出射光瞳數值孔徑係指到達像平面之光束的數值孔徑，即所謂的像側數值孔徑。Page 5 538257 5. Description of the invention (3) The mirrors are aspherical. The disadvantage of the six-reflector objective lens proposed in the patent WO 99/57606 is that, without, it is easy to approach the effective range to mosaic the reflector, especially the second and third lenses. In addition, the reflection effect range of the fourth mirror of the system proposed by the patent WO 99/5 760 6 is far away from the optical axis. This makes the stability of the mirror system problematic in the manufacture of such mirrors. You need a lot of space here. Since the system is used in a vacuum, a considerable amount of space needs to be evacuated. Patent WO 99/5760 6 proposes a system with diaphragms located between the second and the first: /, leading to a large incident angle of the third mirror, especially larger than the mirror Patent US Θ 0 33 0 79 proposed a six-mirror system, Its angle of incidence is less than 18. . However, the disadvantage of this system is that the effective range of the first sub-mirror cannot be approached, and the reflectors: the effective range of the mirror is extremely ... the system requires a large space, and = 'will draw a considerable amount of space into the real $ . Mirrors are quite large-missing = large coating room and manufacturing machinery required. The object of the present invention is therefore to provide a projection objective lens suitable for lithography at 1000 nm, which does not have the above two and is preferably a small disadvantage, especially a projection objective lens, which has the largest size. The effective range of the known technology can be easily approached, and the aperture is the largest, like :: J 3 has the highest sexuality. The objective of correcting from a difference of 1 本 is achieved according to the present invention due to a short wavelength, especially a shadow projection objective lens, the projection object = M nm, the micro-pupil pupil, to image an object field in an image field, ;: U -out ring field with-symmetry axis and-perpendicular to the symmetry axis ϋ; ::; to :: C: \ 2D-CODE \ 9iM0 \ 90118732.ptd Page 6 538257 5. Description of the invention (4) —- -f2〇丄 is preferably 25 _, the projection objective is provided with a first, a second, a first =, a fourth, a fifth, a sixth mirror, the centering optical axis is set, each reflection The mirrors all have an effective range. The beam passing through the projection objective enters the effective range. The diameter of the effective range of the first, second, third, fourth, fifth, and sixth reflectors is controlled by the numerical aperture of the exit pupil.丨 200mm NA, preferably $ 300 mm. The exit pupil has a numerical aperture of greater than 0.1 mm, preferably greater than 0.2, and particularly preferably greater than 0.23. The exit pupil numerical aperture of the present invention refers to the numerical aperture of the light beam reaching the image plane, the so-called image-side numerical aperture.

在微影術中為有利的是，使成像光束遠心射至像平面。故有利地將投影物鏡第六反射鏡S6設作凹面。第五反射鏡 S5位在第六反射鏡S6與像平面之間。如欲使此種物鏡光程無遮攔，則需控制出射光瞳數值孔徑。在一有利實施例態樣中，達成物鏡光程無遮攔的原因係’隨出射光瞳數值孔徑增大，欲成像環形場半徑亦增大0It is advantageous in lithography to make the imaging beam telecentric to the image plane. Therefore, it is advantageous to set the sixth objective mirror S6 of the projection objective as a concave surface. The fifth mirror S5 is located between the sixth mirror S6 and the image plane. If you want to make the objective path unobstructed, you need to control the exit pupil numerical aperture. In an advantageous embodiment aspect, the reason why the optical path of the objective lens is not blocked is that as the numerical aperture of the exit pupil increases, the radius of the annular field to be imaged also increases.

一更進一步之貫施例確保了物鏡各反射鏡的可接近性，尤其是為了鑲嵌反射鏡，其使第一、第二、第三、第四、第五、第六反射鏡各具一向後的結構空間，其在有效範圍由反射鏡前側平行於光軸具一深度，第一、第二、第三、第四、第五、第六結構空間的深度至少為5〇 mm，第五反射鏡結構空間的深度大於第五反射鏡直徑的三分之_，且各結構空間不被穿透。A further embodiment ensures the accessibility of the mirrors of the objective lens, especially for the mosaic mirror, which makes the first, second, third, fourth, fifth, and sixth mirrors each have a backward direction. The structure space has a depth from the front side of the mirror parallel to the optical axis in the effective range. The depth of the first, second, third, fourth, fifth, and sixth structure spaces is at least 50 mm. The fifth reflection The depth of the mirror structure space is greater than one third of the diameter of the fifth mirror, and each structure space is not penetrated.

C:\2D-OODE\90-10\90118732.ptd 第7頁五發明說明（5) 對可接近性特別 θ ^ 稱軸延展，而X 的疋，使所有結構空間可平；r ^ ^ 有鑑於塗層靡：^:鏡光程或另-反射鏡的結構：門、有限範圍的邊邊：變形，如使戶:有反射；1 繞得到特別穩定的系統。、且物鏡光私無遮攔，則可反射鏡基質、含灣μ、+、^ 應力，…：；i=’。/Si多層系統通常會產生防止變形”至反射鏡有效範圍。邊、“伤可在一優先實施例中第四反射鏡有效範圍在第二反射像平面之間。〃特別有利的是使第四反射鏡位在第三與第二反射鏡之間，尤其是第一與第二反射鏡之間。此種配置可使第一、弟二、第三、第四反射鏡尺寸特別小。第四反射鏡頂點沿光軸到第一反射鏡的距離（S4S1)與第二反射鏡到第一反射鏡的距離（S 2 S1 )比值在下述範圍内： < &鈐沾花雠Γ S 2 S 3 )與第四反射鏡到第二反射鏡到第三反射鏡的距離1 、μ · 第三反射鏡的距離（S4S3 )比值在下述祀圍内· 〜1 S3 S4 ) <0,9 〇> 3 < ( S2 S3 )C: \ 2D-OODE \ 90-10 \ 90118732.ptd Page 7 of the five invention description (5) special accessibility θ ^ called the axis extension, and the 疋 of X makes all structural space flat; r ^ ^ has In view of the coating: ^: mirror optical path or another-the structure of the mirror: the door, a limited range of edges: deformation, such as users: there is reflection; 1 around to get a particularly stable system. , And the objective lens light is not blocked, the mirror matrix, including the μ, +, ^ stress, ...:; i = '. The / Si multi-layer system usually produces "distortion prevention" to the effective range of the mirror. Edge, "Injury In a preferred embodiment, the effective range of the fourth mirror is between the second reflective image plane. 〃 It is particularly advantageous to position the fourth mirror between the third and second mirrors, especially between the first and second mirrors. This configuration makes the size of the first, second, third, and fourth mirrors particularly small. The ratio of the distance (S4S1) from the vertex of the fourth mirror to the first mirror along the optical axis to the distance (S 2 S1) from the second mirror to the first mirror is within the following range: < & 钤钤花雠 Γ S 2 S 3) and the distance from the fourth mirror to the second mirror to the third mirror 1, μ · The distance of the third mirror (S4S3) ratio is within the following range. ~ 1 S3 S4) < 0 , 9 〇 > 3 < (S2 S3)

538257538257

則第五與第六反射鏡所構成的物鏡部五、發明說明（6) 如光程需無遮攔份有兩問題部份。一問題部份在第五反射鏡上緣。光程需適當設計，下邊緣光線在該反射鏡有效範圍之上而射至像平面。传問題部份則為第六反射鏡下緣。另如配合出射光瞳數值孔徑NA、第五與第六反射鏡距離 (S5S6)、第五反射鏡與像平面距離（S5B)、第五與第六反射鏡彎曲半徑rs，Γβ而選擇平均環形場半徑，則可在^述第五與第六反射鏡部份傍軸近似達到無遮攔之光程； /? > tan ( arc sin { ΝΑ) ) ^ { S5 Β ) ^ {S5 S6) - —__]_ ~6 S5 S6 ) 遵寸無遮攔光程之條件而小於最小半徑時，會導致反射鏡對球面基本形狀的非球面偏差，亦即反射鏡的非球面度，躍升’尤其是第五反射鏡。於是偏離傍軸近似及上述公式適用之部分。具高非球面度的反射鏡製造技術耗煩。為抑低反射鏡的角度負荷，有利的是使所有反射鏡物場中間對稱軸上的場點主光線入射角< 1 8。。在本發明一特別實施例中投影物鏡具一中間像，該中間像有利地位在第四反射鏡後方光方向上。在本發明第一實施例中第一反射鏡為凸面，所有反射鏡為非球面。Then the objective lens unit composed of the fifth and sixth reflectors 5. Description of the invention (6) If the optical path needs to be unobstructed, there are two problematic parts. One problem is at the upper edge of the fifth mirror. The optical path needs to be properly designed, and the light at the lower edge is above the effective range of the mirror and reaches the image plane. The problem part is the lower edge of the sixth mirror. Another example is to select the average annular shape with the exit pupil numerical aperture NA, the distance between the fifth and sixth mirrors (S5S6), the distance between the fifth and sixth mirrors (S5B), and the bending radius rs, Γβ of the fifth and sixth mirrors. The field radius can be approximately unobstructed in the paraxial of the fifth and sixth mirror parts. /? &Gt; tan (arc sin {ΝΑ)) ^ {S5 Β) ^ {S5 S6)- —__] _ ~ 6 S5 S6) In accordance with the condition of unobstructed light path and smaller than the minimum radius, it will cause the aspheric deviation of the basic shape of the mirror to the spherical surface, that is, the asphericity of the mirror. Five mirrors. Then deviate from the paraxial approximation and the part to which the above formula applies. Mirror manufacturing technology with high asphericity is tedious. In order to suppress the angular load of the mirror, it is advantageous to make the main ray incident angle < 18 of the field point on the middle symmetry axis of the object field of all the mirrors. . In a special embodiment of the invention, the projection objective has an intermediate image, which is advantageously in the light direction behind the fourth mirror. In the first embodiment of the present invention, the first reflecting mirrors are convex, and all reflecting mirrors are aspherical.

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五、發明說明（7) __V. Description of the invention (7) __

在本發日月g _叙 A 為非球面。一貫轭例中第一反射鏡為凹面，所有反射鏡除此之外亦#努非球面。了使第一反射鏡為傍軸平面，所有反射鏡為鏡為有反射鏡為非球面之外，#可只使至多五反射特古面，而得到特別簡單的製造。 s 利的是使有效距離與光軸距離最遠的反射鏡，通吊疋弟四反射鏡，為球面。射镜逋括影Ϊ鏡外本發明尚提供-種投影曝光設備，其包以;：：：？場之照明裝置及本發明之投影物鏡。夺依據貫施例進一步說明本發明。 1·^之样jg^j兒明 H可看出本發明有效範圍及有效範圍直徑。顯示—腰子料投影物鏡反射鏡照㈣1。本發物鏡使用於微影術投影照明設備二 Υ ^2 ^; ;y 1, -On this day, the moon and moon A are aspheric. In the conventional yoke example, the first mirror is concave, and all mirrors are also aspheric. In order to make the first mirror a paraxial plane, all mirrors are mirrors, mirrors are aspheric, and #up to five special reflective surfaces can be used, resulting in a particularly simple manufacturing. The advantage of s is that the reflector that makes the effective distance from the optical axis the furthest is the spherical surface of the four-mirror. The scope of the invention, in addition to the scope of the mirror, the present invention also provides a projection exposure device, which includes ::::? Field illumination device and projection objective lens of the present invention. The invention is further illustrated by the following examples. 1 · ^ 之 jg ^ j 儿明 H can see the effective range and effective range diameter of the present invention. Display—Waist Material Projection Objective Mirror Photograph ㈣1. This objective lens is used in lithography projection lighting equipment 照明 ^ 2 ^;; y 1,-

圓、。腰有子效V圍邊Λ10重疊。包絡圓為包住有效範回。有效乾圍的直徑D由包絡圓2的直徑而得。取J 圖2顯示一投影照明設備投影物鏡物其藉本發明投影物鏡而成像於一放置 0=11，晶圓’的像平面上。像平面上的像=物例如場或像場11為扇狀環形場，具一對稱軸丨2。/目同。物示圖2尚顯示出物平面上的轴，亦即χ軸及y軸。，環形場11對稱軸1 2在y軸方向上。euv於旦> μ回杈影照明設備的circle,. Waist has sub-effect V perimeter Λ10 overlapping. The envelope circle is the effective range for enveloping. The diameter D of the effective dry circumference is obtained from the diameter of the envelope circle 2. Take J. Fig. 2 shows a projection objective of a projection illuminating device, which is imaged on an image plane of a wafer 'placed at 0 = 11 by the projection objective of the present invention. The image or object on the image plane, for example, the field or image field 11 is a fan-shaped annular field with a symmetry axis 2. / 目同. Object display Figure 2 also shows the axes in the object plane, namely the χ and y axes. The ring field 11 symmetry axis 12 is in the y-axis direction. euv Yu Dan > μ back

C:\2D-CODE\90-10\90118732.ptd 第10頁 538257 、發明說明（8) 掃彳田方向亦在y軸上，掃描使用環形場掃描器。X方向為物平$上垂直於掃描方向的方向。環形場具一所謂的平均環形场半梭R ’其由像場中心點1 5到投影物鏡光軸HA的距離定義。C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 10 538257, Description of the invention (8) The direction of the sweep field is also on the y-axis, and a circular field scanner is used for scanning. The X direction is the direction perpendicular to the scanning direction on the object plane. The annular field has a so-called mean annular field half shuttle R 'which is defined by the distance from the image field center point 15 to the optical axis HA of the projection objective.

圖3舉例顯示本發明投影物鏡整個系統的兩反射鏡元件 H 22 ’該反射鏡元件2 0，2 2相應於反射鏡有效範圍，其 /σ Γ ί轴24而設置。如圖3所示，投影物鏡反射鏡之每一 $效fe圍2 0，2 2皆具一結構空間2 6，2 8。在本發明中結構工=的深度T係指有效範圍2 〇，2 2點3 0，3 2處平行於光軸的見度。在本發明中有效範圍的中心點為中心像點主光線 CR的入射點。如圖3所示，投影物鏡之反射鏡被適當設置’使得結構空間26，28不被穿透。圖4顯示本發明六反射鏡系統之第一實施例，其中構成扇狀環形場並具如圖2所示對稱軸之欲成像物垂直於對稱軸方向的尺寸最小為2〇 mm，最好是25 mm。欲成像物位在圖4所示，鏡的物平面1〇〇上。在所示實施例中物平面1〇〇上的物場為一環形場。物平面上放置欲成像於一光敏層上的物，其在微影術中被稱作調制盤。FIG. 3 shows two examples of the two mirror elements H 22 ′ of the entire system of the projection objective lens according to the present invention. The mirror elements 20 and 22 are arranged corresponding to the effective range of the mirror, and / σ Γ axis 24 is set. As shown in Fig. 3, each of the projection objective mirrors 20, 22 has a structural space 26, 28. In the present invention, the depth T of the structure means = the visibility in the effective range of 20, 22, 30, 32 parallel to the optical axis. The center point of the effective range in the present invention is the incident point of the central image point main ray CR. As shown in Fig. 3, the mirror of the projection objective is appropriately set 'so that the structural spaces 26, 28 are not penetrated. FIG. 4 shows a first embodiment of a six-mirror system according to the present invention, wherein the size of the object to be imaged which forms a fan-shaped annular field and has the axis of symmetry as shown in FIG. 2 perpendicular to the direction of the axis of symmetry is at least 20 mm, preferably 25 mm. The object level to be imaged is shown in Fig. 4 on the object plane 100 of the lens. The object field on the object plane 100 in the illustrated embodiment is a ring field. An object to be imaged on a photosensitive layer is placed on the object plane, which is called a modulation disk in lithography.

物以本發明投影物鏡而成像的平面為像平面1 〇 2，其上 I放置一晶圓。本發明投影物鏡包括一第一反射鏡31、一第反射鏡S2第二反射鏡S3、一第四反射鏡S4、一第五反射鏡S5及一第六反射鏡別。在圖4所示實施例中，所有六反射鏡Sl，S2，M cc ^ , =&址 M，S5， S6皆設作非球面形反射鏡。第一反射鏡S1為一凸反射鏡。The plane on which the object is imaged by the projection objective lens of the present invention is the image plane 102, and a wafer is placed on it. The projection objective lens of the present invention includes a first mirror 31, a first mirror S2, a second mirror S3, a fourth mirror S4, a fifth mirror S5, and a sixth mirror. In the embodiment shown in Fig. 4, all six mirrors Sl, S2, Mcc ^, = & address M, S5, S6 are all set as aspherical mirrors. The first mirror S1 is a convex mirror.

视257 五、發明說明（9) 在圖4所示實施例中，光闌B在第二反射鏡32上。系統對中光軸HA，且像側，亦即像平面1〇2，為遠心。像側遠心係指主光線CR以接近或約90。角射至像平面丨〇2。為儘量抑低反射鏡系統内的光損失及塗層感生的波前像差。，中心像點主光線CR射入反射鏡表面的入射角恆小於 8。。圖4同樣標示出反射鏡S1，S2， S3，％， S5> % =範圍 N!，N2, N3, N4, N5, N6 的結構空間 B1，B B4， B5， B6 。 ’ 如圖4清楚所示，整個物鏡的結構為，所有結構空間βι，，B3，B4’ B5，B6可在平行於物平面1〇〇物場對稱軸12 方向上延展，而不切割物鏡光程或另一反射鏡之結構空 :。為能清楚辨識，圖4標示出一座標系統χ，y，z。物鏡 ^由在Z方向上，物場在xy平面上’物場對稱軸12在丫方向上〇View 257 V. Description of the invention (9) In the embodiment shown in FIG. 4, the diaphragm B is on the second mirror 32. The system is centered on the optical axis HA, and the image side, that is, the image plane 102, is telecentric. Image-side telecentricity means that the main ray CR is close to or about 90 °. Angular to the image plane 丨〇2. In order to minimize the light loss in the mirror system and the wavefront aberration induced by the coating. , The incident angle of the central image point principal ray CR into the surface of the mirror is always less than 8. . Figure 4 also shows the structural spaces B1, B B4, B5, B6 of the mirrors S1, S2, S3,%, S5>% = range N !, N2, N3, N4, N5, N6. 'As shown clearly in Figure 4, the structure of the entire objective lens is that all structural spaces βι,, B3, B4' B5, B6 can be extended in a direction parallel to the object plane 100 object field symmetry axis 12 without cutting the objective light Structure or another reflector: For clear identification, Fig. 4 shows a standard system χ, y, z. Objective lens ^ In the Z direction, the object field is on the xy plane. The object field symmetry axis 12 is in the Y direction.

^圖4所示’所有有效範圍的結構空間可在物場對稱軸 2:向上延展，故確保至少可由物鏡一側接鑲嵌及組裝反射鏡。 J 此外，圖4實施例是一具平均像z的系統。平均像2 二反射鏡3丨後方第四與第五反射鏡84’ S5之間。由於此平 =像Z圖4系統分成兩部份’第一部份包括反射鏡礼s2, S3，S4，第二部份包括反射鏡S5，％。反射鏡S1至S4及S6的結構空間B1至以及“至少為5〇 =古第五反射鏡S5的結構空間B5至少為第五反射鏡有效範位的一刀之一，使得最靠近晶圓的第五反射鏡Μ與像^ As shown in Figure 4 ', all the structural space of the effective range can be extended upwards on the symmetry axis 2: of the object field, so it is ensured that at least one side of the objective lens can be mounted and assembled with the reflector. J In addition, the embodiment of FIG. 4 is a system with an average image z. The average image 2 is between the second mirror 3 and the fourth rear and fifth mirror 84 'S5. Since this plane = Z, the system is divided into two parts. The first part includes the mirrors s2, S3, and S4, and the second part includes the mirror S5,%. The structural spaces B1 to S1 to S4 and S6 and "at least 50 = the structural space B5 of the ancient fifth mirror S5 is at least one of the effective levels of the fifth mirror, so that the first Five mirrors M and image

C:\2D-CODE\90-10\90118732.ptd 第12頁 538257 五、發明說明（ίο) 平面1 0 2間至少有1 2 m m的自由工作距離。圖4第-實施例之Code V資料顯示於附錄表！。該射鏡 S1，/2, M，S4, S5, S6 為元件 l 2, 3, 4, 5, 6。第一貫施例系統像側數值孔徑為〇 2 5。圖5顯示本發明第二貫施例。斑' u 兴圖4相同το件標以相同編號。同樣地六個反射鏡表面皆為非 4 w白馬非球面，但不同於圖4實施例’第一反射鏡S1為非凸面而為凹面。 , e v表。圖5投影物鏡數值孔徑與圖4實施例同為N A = 〇. 2 5。圖5實施例中物鏡所有反射镑古 # 身了鏡有效乾圍直徑D皆小於3 〇〇 mm，欲成像物構成如圖2所示扇狀環形場。圖5第一貫施例各反射鏡在X v平而u A 士闰夺以甘比 —兄杜ΧΥ干面上的有效範圍顯示於圖6a至6f，其皆以xy座標標示，如C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 12 538257 V. Description of the invention (ίο) There is a free working distance of at least 12 m between the planes of 102. The Code V data of the fourth embodiment of Fig. 4 is shown in the appendix table! . The mirrors S1, / 2, M, S4, S5, and S6 are components 1, 2, 3, 4, 5, 6. The numerical aperture of the image side of the first embodiment is 0.25. Fig. 5 shows a second embodiment of the present invention. The same items in Figure 4 are labeled with the same numbers. Similarly, the surfaces of the six mirrors are all non- 4 w white horse aspheric surfaces, but different from the embodiment of FIG. 4, the first mirror S1 is non-convex and concave. , e v table. The numerical aperture of the projection objective lens of FIG. 5 is the same as that of the embodiment of FIG. 4 as N A = 0.25. In the embodiment of FIG. 5, all reflections of the objective lens are effective. The effective diameter D of the lens is less than 300 mm. The object to be imaged constitutes a fan-shaped annular field as shown in FIG. 2. Fig. 5 The first embodiment of each mirror on X v flat and u A is taken as a ratio of Gambie-Du Du X 杜 The effective range on the dry surface is shown in Figs. 6a to 6f, which are marked with xy coordinates, such as

方向為環形場掃描器的掃描方肖。W 向的方向。 ^方向’X方向為垂直於掃描方如^所示’反射鏡S1上的有效範圆基本 ,Γ J圖?斤定義之直徑D為“5. 042關。圖6b反射鏡 S 2上的有效範圍N 2基本上a圓报甘士 » 个上马_形，其直徑為157.168 mm ° .圖6c反射鏡S3上的有效蘇[fiMq π & 109 ,R7 図。秀政轭圍N3又為腰子形，其直徑D為 lUZ.367mm〇圖 6d 反射错— 汉耵鏡Μ上的有效範圍Ν4直徑為 49 7 mm 〇圖6e反射鏡S5，S6上的有效範圍N5，㈣有效範圍N5直徑D為】n? ^ 马圓心马1〇2· 367咖，有效範圍㈣直徑!）為第13頁 C:\2D-G0DE\90-10\90118732.ptd 538257 五、發明說明（11) 270·054 mm 〇施例所有有效範圍N1 因此，依據本發明圖5投影物鏡實至N 6直徑皆小於3 〇〇 m m。圖7顯示本發明六反射鏡投及圖5相同元件同樣地標以相料見附錄表3之Code V表。圖圖7實施例第一反射鏡S1為傍率接近光抽HA同為〇。影物鏡之第三實施例。與圖4 同編號。圖7第三實施例之資 7糸統數值孔徑N A = 〇 2 5。、轴平面，亦即反射鏡1基本曲圖8顯示-在製造方面特別有利的六反射鏡*** 統數值孔徑為0.23，第四反射鏡為球面反射鏡’此對製造極為有利，因球面加工比非球面容易，且第四反射鏡上之有效範圍與光軸距離最遠。圖8系統資料見附錄表4 iC〇de v表。在第二與第二或第一與第二反射鏡間的第四反射鏡位置可導致反射鏡’尤其是第四反射鏡，有效範圍尺寸相當小〇第二與第二或第一與第二反射鏡間之第四反射鏡位置的相關資料可由下述條件而得：〇, 1 < 〇, 3 < (s^^sjx (5/) [S3、S41 (S3) <〇,9 ( 1) <0,9 (2) 條件（2)尤其是:The direction is the scanning square of the circular field scanner. W direction. ^ Direction 'X direction is perpendicular to the scanning side as shown by ^' The effective range circle on the mirror S1 is basic, and the diameter D defined by the Γ J diagram is "5.04 Off. Figure 6b is valid on the mirror S 2 The range N 2 is basically a round report Gansu shape with a diameter of 157.168 mm °. Figure 6c Effective Sue on the mirror S3 [fiMq π & 109, R7 図. Xiusheng yoke around N3 is waist-shaped again , Its diameter D is 1UZ.367mm. Figure 6d. Reflection error—the effective range N4 diameter on the Han mirror M is 49 7 mm. Figure 6e. The effective range N5 on the mirror S5, S6, and the effective range N5 diameter D is]. n? ^ Horse circle heart horse 102, 367 coffee, effective range ㈣ diameter!) is page 13 C: \ 2D-G0DE \ 90-10 \ 90118732.ptd 538257 V. Description of the invention (11) 270 · 054 mm 〇 All effective ranges N1 of the embodiment, therefore, according to the present invention, the diameter of the projection objective lens to N 6 is less than 300 mm. FIG. 7 shows that the six mirrors of the present invention and the same elements of FIG. Code V table. The first mirror S1 in the embodiment of FIG. 7 is close to the light extraction HA and the same is 0. The third embodiment of the shadow objective lens. Same number as in FIG. 4. The third embodiment has a numerical aperture NA = 0 2 5. The axial plane, that is, the basic curve of the mirror 1 Figure 8 shows-a six-mirror system with a numerical aperture of 0.23, which is particularly advantageous in terms of manufacturing. Mirror is a spherical mirror 'This is extremely advantageous for manufacturing, because spherical processing is easier than aspheric, and the effective range on the fourth mirror is the farthest from the optical axis. Figure 8 System data see Appendix Table 4 The position of the fourth mirror between the second and the second or the first and the second mirror may cause the mirror, especially the fourth mirror, the effective range size is quite small. The second and second or the first and the first The relevant data of the position of the fourth mirror between the two mirrors can be obtained from the following conditions: 〇, 1 < 〇, 3 < (s ^^ sjx (5 /) [S3, S41 (S3) < 〇, 9 (1) < 0,9 (2) condition (2) especially:

第14頁 C:\2D-C0DE\90-10\90118732.ptd 538257 五、發明說明（12) 〇,4 〇, 9 ( 2a) 四實施例之條件岭人丨卞知合於下矣 (S4S1)/(S2S1) 凸面 0. 14 _JLL凹面 0. 35 Ml平面 ~~—__ 0. 19 五非球面 0. 67 表5 :條件（1 )資料實施例圖4 圖5 圖7 圖8 表6 :條件（2 )資料實施例 "* —--- 特性 (S3S4)/(S2S3) 1 =圖4 Ml凸面 0. 31 ~ 2 =圖5 Ml凹面 0. 44 3 =圖7 Ml平面 0.34 4 =圖8 NA : 〇· 23，五非球面 0. 69 有效範圍及大反射鏡需要極大的結構空間，其對較大UHV 系統之抽真空為不利。大反射鏡之另一缺點為，對機械振盪的敏感性較高，因其固有頻率小於較小的反射鏡。反射鏡尺寸小的另一優1Ϊ為，基質的非球面化及塗層可在較小的UHV力口工室中進行。由於反射鏡基質的多層系統導致產生塗層應力，在基質邊緣可能會出現變形。為使變形不延伸至有效範圍，需要Page 14 C: \ 2D-C0DE \ 90-10 \ 90118732.ptd 538257 V. Description of the invention (12) 〇, 4 〇, 9 (2a) The conditions of the four embodiments are described in the following. (S4S1) / (S2S1) convex 0. 14 _JLL concave 0. 35 Ml plane ~~ —__ 0. 19 five aspheric 0. 67 Table 5: Conditions (1) Data Example Figure 4 Figure 5 Figure 7 Figure 8 Table 6: Conditions ( 2) Example of data " * ----- characteristics (S3S4) / (S2S3) 1 = Figure 4 Ml convex surface 0.31 ~ 2 = Figure 5 Ml concave surface 0.44 3 = Figure 7 Ml plane 0.34 4 = Figure 8 NA: 〇23, five aspheric surface 0.69 effective range and large reflectors require a large amount of structural space, which is not good for the vacuum of larger UHV systems. Another disadvantage of large mirrors is that they are more sensitive to mechanical oscillations because their natural frequencies are smaller than smaller mirrors. Another advantage of the small mirror size is that the asphericity of the substrate and coating can be performed in a smaller UHV lab. Deformation may occur at the edges of the substrate due to the coating stress caused by the multilayer system of the mirror substrate. In order for the deformation not to extend into the effective range,

\\312\2d-code\90-10\90118732.ptd 第15頁 538257 五、發明說明（13) 在有效範圍外設一最小溢流道，使其内部的變形可被縮減。第一至第四實施例各反射鏡邊緣部份列於表7中。”’ 表7 :反射鏡S1至S6邊緣部份資料、又 ° 反射鏡 A1: :圖4 A2 = S1 13 mm 21 S2 11 mm 11 S3 22 mm 28 "T ram S6 5 mm 6 mm A3 -一—-— 16mm 如此處所示，圖4，5，7實施例每一^部份皆大於4 mm，此對鑲框時的塗層應力特別有利。圖9顯示本發明投影物鏡一有利實施例第五及第六反射鏡S 5，S 6的配置。圖9中成像光束2 0 0达心射至像平面1 〇 2，該像平面上例如放置一晶圓。第六反射鏡S6為凹面。第五反射鏡S5在第六反射鏡與像平面1 02之間。在本發明投影物鏡中所有反射鏡Sl，S2，S3，S4，S5，S6皆設在物平面iQQ與像平面 1 02之間。如投影物鏡中光程需無遮攔，則圖9反射鏡託與 S 6所構成的物鏡像側部份有兩問題部份。一問題部份在第五反射鏡S5有效範圍的上緣2〇2。光程需適當設計，使得光束2 0 0下邊緣光線2 〇 4在反射鏡S 5有效範圍N5之上而射至像平面丨〇2。如r代表環形場半徑， (S 5 B )代表反射鏡s 5與像平面1 〇 2的距離，則下邊緣光線 2 04與光軸HA的距離由下述關係而得\\ 312 \ 2d-code \ 90-10 \ 90118732.ptd Page 15 538257 V. Description of the invention (13) In the effective range, there is a minimum overflow channel in the periphery, so that the internal deformation can be reduced. The edge portions of each of the first to fourth embodiments are shown in Table 7. ”'Table 7: Mirror S1 to S6 edge data, and ° Mirror A1 :: Figure 4 A2 = S1 13 mm 21 S2 11 mm 11 S3 22 mm 28 " Tram S6 5 mm 6 mm A3-one —-— 16mm As shown here, each of the embodiments of Figs. 4, 5, and 7 is larger than 4 mm, which is particularly advantageous for the coating stress when framing. Fig. 9 shows an advantageous embodiment of the projection objective of the present invention. Configurations of the fifth and sixth mirrors S 5, S 6. In FIG. 9, the imaging beam 2000 hits the image plane 100, and a wafer is placed on the image plane. The sixth mirror S6 is concave. The fifth mirror S5 is between the sixth mirror and the image plane 102. In the projection objective lens of the present invention, all the mirrors S1, S2, S3, S4, S5, and S6 are set on the object plane iQQ and the image plane 102. Between. If the light path in the projection objective lens needs to be unobstructed, the object mirror side part formed by the reflector holder and S 6 in FIG. 9 has two problem parts. One problem part is above the effective range of the fifth mirror S5. Edge 200. The optical path needs to be properly designed so that the lower edge light 2 of the beam 2000 is above the effective range N5 of the mirror S 5 and strikes the image plane. 〇 2 Table ring field radius, (S 5 B) representative of the mirrors from the image plane with s 5 2 1 billion, the lower edge of the relationship between the light 204 from the optical axis HA obtained by the following

C:\2D-CODE\90.10\90ll8732.ptd 第16頁 538257 五、發明說明（14) Y = R - (S5B)* tan (arc sin (ΝΑ)) 其中N A代表出射光瞳數值孔徑。有效範圍N5的上限由光束200上邊緣光束206射至第五反射鏡的入射點決定。使用變量 r6 : S6靑曲半徑 (S5S6):S5 與S6 (正）距離可應用截距公式於第六反射鏡以求得第五反射鏡有效範圍N%上緣2 02與光軸HA，的距離y，。 y --、S5S6) tan (S5 B) + [ S5 SG)-C: \ 2D-CODE \ 90.10 \ 90ll8732.ptd Page 16 538257 V. Description of the invention (14) Y = R-(S5B) * tan (arc sin (ΝΑ)) where N A represents the numerical aperture of the exit pupil. The upper limit of the effective range N5 is determined by the incident point where the upper edge beam 206 of the beam 200 hits the fifth mirror. Using the variable r6: S6 curvature radius (S5S6): the distance between S5 and S6 (positive) can apply the intercept formula to the sixth mirror to obtain the fifth mirror effective range N% upper edge 2 02 and the optical axis HA, Distance y ,. y-, S5S6) tan (S5 B) + (S5 SG)-

R tan(arcsin(A//4)) arc sin (Λ//4) +2 arc sinR tan (arcsin (A // 4)) arc sin (Λ // 4) +2 arc sin

[NA ( M {S5Bj + (S5S0i-r6+-[NA (M {S5Bj + (S5S0i-r6 +-

R tan (arcsin {NA)) 為使苐五反射鏡S 5光程無遮搁，需使 △ y = y - y’ ^ 0 另一問題部份在S6下緣。為在此處確保傍軸近似無遮攔，可兩度應用截距公式於S5及S6以求得像平面1〇2環形場半徑R而得到： /? > tan ( arc sin ( NAj ) * {S5 B) ^ {S5 S6) 1 1 厂5 S5 S6 如r6，r5，（S5B)及（S5S6)為固定，且 r6 = 53 5.2 1 5 mm; r5 = 5 9 4.2 1 5 mm;R tan (arcsin {NA)) In order to make the optical path of the fifth-mirror S 5 unobstructed, △ y = y-y ’^ 0 Another part of the problem is at the lower edge of S6. In order to ensure that the paraxial is almost unobstructed, the intercept formula can be applied to S5 and S6 twice to obtain the ring radius R of the image plane 102: /? &Gt; tan (arc sin (NAj) * { S5 B) ^ {S5 S6) 1 1 Plant 5 S5 S6 such as r6, r5, (S5B) and (S5S6) are fixed, and r6 = 53 5.2 1 5 mm; r5 = 5 9 4.2 1 5 mm;

C:\2D-CODE\90-10\90118732.ptd 第17頁 538257C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 17 538257

(S5B) =,44·083 mm; (S5S6) = 437.186 mm 卜:據' 及△ y公式在第五反射鏡光程無遮攔條件下由主衣形場半徑R公式得到如表5所列與孔徑的關係：表5(S5B) =, 44.083 mm; (S5S6) = 437.186 mm. B: According to the formula 'and △ y, the formula R of the main garment shape field radius is obtained as shown in Table 5 under the condition that the optical path of the fifth mirror is not blocked. Relationship of Aperture: Table 5

NA 0. 15 0. 20 0. 2 5 mm 18.191 0. 30 24.475 30. 958 37. 707 ^1 ---二-----------v v ^ w__Ο I . 班y，5所不，出射光瞳數值孔徑大時，環形場半徑大。 %形場半徑设定時，同軸六反射鏡物鏡孔徑增大只可到某值。超過此值時’第五反射鏡的非球面度躍升，如此對非球面製造與非球面測量技術以及物鏡校正會有問題。 (S5B)是所謂的物鏡對晶圓工作距離，其不得小於〆最小值。藉縮小（S 5 B)以縮小環形場半徑只能到達最小距離0 距離（S5S6)的縮小雖然會使環形場半徑較小，但另一方面卻增大第五反射鏡S 5的入射角。大的s 5入射角以多層系統製造時欲達最佳反射性能需花費極高成本。縮小h導致與縮小距離（S 5 S 6 )相同的缺點，因此種縮小亦會使g 5入射角增大。增大re雖然得到較小的環形場半徑，但有損第五反射鏡的無遮攔。圖1 0顯示設本發明六反射鏡投影物鏡2 〇〇之微影術投影曝光設備。照明系統2 0 0可是專利EP 99 1 06348. 8之「照明系統，尤指用於EUV微影術」或US申請案號〇 9/30 5, 0 1 7之「Illumination system particularly forNA 0. 15 0. 20 0. 2 5 mm 18.191 0. 30 24.475 30. 958 37. 707 ^ 1 --- two ----------- vv ^ w__Ο I. Class y, 5 No, when the numerical aperture of the exit pupil is large, the ring field radius is large. When the% shape field radius is set, the aperture of the coaxial six-reflection lens can only be increased to a certain value. When this value is exceeded, the aspheric degree of the fifth mirror jumps, so that there will be problems with aspheric manufacturing and aspheric measurement technology and objective lens correction. (S5B) is the so-called objective lens-to-wafer working distance, which must not be less than the minimum value of 〆. By reducing (S 5 B) to reduce the ring field radius, only the minimum distance 0 (S5S6) can be reduced. Although the ring field radius is smaller, the incident angle of the fifth mirror S 5 is increased on the other hand. A large s 5 angle of incidence can be extremely expensive to achieve optimal reflection performance when manufactured in a multilayer system. Reducing h causes the same disadvantage as reducing the distance (S 5 S 6), so this reduction also increases the angle of incidence of g 5. Increasing re will get a smaller ring field radius, but it will damage the unobstructed fifth mirror. FIG. 10 shows a lithography projection exposure apparatus provided with a six-mirror projection objective lens 200 of the present invention. The lighting system 2000 is the "Illumination system particularly for the EUV lithography" of the patent EP 99 1 06348. 8 or the "Illumination system particularly for the

\\312\2d-code\9〇-l〇\90118732.ptd 第18頁 538257 五、發明說明（16) EUV-Lithography」，其公告内容完全採納於本發明中。此種照明系統包括一EUV光源204。EUV光源的光被聚光反射鏡2 0 6會聚。經一包括光柵元件（所謂的光瞳蜂窩）之第一反射鏡及一第二反射鏡而照射調制盤212。調制盤212 反射的光經一本發明投影物鏡而射至一包括一光敏層的體213上。有效範圍尺寸小，且是一種在設計及的輕薄短小投影物鏡。元件編號之說明 Z 包絡圓 6, 8 包絡圓與腰子形照射場重疊二 10 腰子形照射場邊緣 11 物場 12 環形場對稱軸 15 物場或像場中心點 20, 22 反射鏡元件 26, 28 結構空間 30, 32 有效範圍中心點 100 物平面 102 像平面 200 成像光束 202 S5有效範圍N5上緣 204 下邊緣光線利\\ 312 \ 2d-code \ 9〇-l〇 \ 90118732.ptd Page 18 538257 V. Description of the invention (16) EUV-Lithography ", the content of the announcement is fully incorporated in the present invention. Such a lighting system includes an EUV light source 204. The light from the EUV light source is focused by the condenser mirror 206. The modulation disk 212 is illuminated through a first mirror and a second mirror including a grating element (so-called pupil honeycomb). The light reflected by the modulation disc 212 is incident on a body 213 including a photosensitive layer through a projection objective lens of the present invention. The effective range size is small, and it is a thin and light projection lens designed in. Explanation of component number Z Envelope circle 6, 8 Envelope circle overlaps with waist-shaped irradiation field 2 10 Edge of waist-shaped irradiation field 11 Object field 12 Axis of symmetry of circular field 15 Center point of object field or image field 20, 22 Mirror element 26, 28 Structure space 30, 32 effective range center point 100 object plane 102 image plane 200 imaging beam 202 S5 effective range N5 upper edge 204 lower edge light

538257538257

五、發明說明（17) 206 上邊緣光線 S1 第一反射鏡 S2 第二反射鏡 S3 第三反射鏡 S4 第四反射鏡 S5 第五反射鏡 S6 第六反射鏡 Bl，B2, B3,B4,B5,B6 反射鏡結構空間 Nl,N2, N3,N4,N5,N6 反射鏡有效範圍 X, y，z 物平面與像平面座標系統之座標 HA 投影物鏡光軸 ΝΑ 出射光瞳數值孔徑 R 環形場半徑 CR 主光線 B 光闌 Z 中間像 D 有效範圍直徑 C:\2D-CODE\90-10\90118732.ptd 第20頁 538257 五、發明說明（18) 附錄：表1 - 4 C 〇 d e V -物鏡資料表1 :實施例1 (圖4 )V. Description of the invention (17) 206 Upper edge light S1 First reflector S2 Second reflector S3 Third reflector S4 Fourth reflector S5 Fifth reflector S6 Sixth reflector Bl, B2, B3, B4, B5 , B6 Reflector structure space Nl, N2, N3, N4, N5, N6 Mirror effective range X, y, z Coordinates of the object plane and image plane coordinate system HA Projection objective optical axis NA The exit pupil numerical aperture R Circular field radius CR main ray B diaphragm Z intermediate image D effective range diameter C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 20 538257 V. Description of the invention (18) Appendix: Table 1-4 C 〇de V-Objective lens Data sheet 1: Example 1 (Figure 4)

元件編號半徑厚度直徑種類 aaaacT 1 1 3 4 5 6 3ILQ INF A(l) Αζ2) α〇) Α(4) ACS) ACS〕 INF 743.3275 -557.1363 APHTTURaLSNOE 0.QQQQ •7G2.996a -221.1310 737.9929 -436.7697 430.7697 210.3986 177.1640 177.3847 191.0743 426.0706 U0.I796 310.5313 70.5007 R£FL ^EFL HSFL HEFl. REFU 非球面常數 2 Ccurv)y 4 S 3 χα 2 -------- 2 2 1/2 + + (c)y + c〇)y 1 -η Cl-Cl+O Ccurv) y ] 12 14 is ia 2Q + Cs〕y — Cp〕y + Cg)y > ch)y 4. 0)YElement number Radius Thickness Diameter type aaaacT 1 1 3 4 5 6 3 ILQ INF A (l) Αζ2) α〇) Α (4) ACS) ACS] INF 743.3275 -557.1363 APHTTURaLSNOE 0.QQQQ • 7G2.996a -221.1310 737.9929 -436.7697 430.7697 210.3986 177.1640 177.3847 191.0743 426.0706 U0.I796 310.5313 70.5007 R £ FL ^ EFL HSFL HEFl. REFU aspheric constant 2 Ccurv) y 4 S 3 χα 2 -------- 2 2 1/2 + + (c) y + c〇) y 1 -η Cl-Cl + O Ccurv) y] 12 14 is ia 2Q + Cs] y — Cp] y + Cg) y > ch) y 4. 0) Y

非球面曲率 κ c A F 3 G c H a 1 AC 1) 0.Q0006144 〇.〇〇〇〇〇〇 1.3725βε-Ζ9 .S.48969E-10 • o.aoaaoe-eoo -4.477106-1S o.aaoooe+OQ S.93S97E-2Q α.οαοοοε+οο -1.S1832E-E4 O.O.QOGOE十 GO AC 2) 0.000929SS a.QOOOGO -7.386B9e-30 -4.S0667E-U Q. QQQOQE-i-QO -3.a3QS5E-lS ο.οααοοε^-οο -3.520S0E-Z1 o.oooaoe+ao 7.4S57Qe-2S ο.οοοααε-^οο AC 3) 0.00234106 a -oooooo 1.64447c-27 -3.98337S-10 0.QQQQQ£<h0Q '2.92857E-15 O.OQOOQ£<t-QQ 8.46236S-13 o.a〇QQ〇e-Hao -5.98614S-23 O.QOOQO&-OQ A( 4) 0.001938S7 O.aOQOQQ -1.71S15c-31 -3.SS491E-I2 Q.QQQOGE-^OQ 7.43877^-17 Q.aaaGoe+oa -S.3S969e-22 ο.οααοαε+αο 2.3S53BE-25 0.0QGQQe-»-O0 A( s〕 O.QQ179SS1 0.QQQQ0Q -9.96Z5a£-2S 3.445696-09 0. QQQQOE-rOQ 1.4S719E-13 · O.QQQQQEi-OQ -S.07132E«13 a. oooQoe-toa 1.U331H-21 q.oqqoqe~qo AC δ) 0.0Gia69QS Q.OQOOQO 4.+4608E-32 S.(598S3E-U Q.QQQQQE-eOQ 3.06114E-1S a.aooQQe-f-oa 1.Z9I23E-21 0. OOQQOMO 2.32734£t27 Q. OQQOQe-^OQ 參考波長=Π.4ΜΜ 成像比=0.25 像側孔徑=0.25Aspheric curvature κ c AF 3 G c H a 1 AC 1) 0.Q0006144 〇〇〇〇〇〇〇〇 1.3725 βε-Z9 .S.48969E-10 • o.aoaaoe-eoo -4.477106-1S o.aaoooe + OQ S.93S97E-2Q α.οαοοοε + οο -1.S1832E-E4 OOQOGOE TEN GO AC 2) 0.000929SS a.QOOOGO -7.386B9e-30 -4.S0667E-U Q. QQQOQE-i-QO -3. a3QS5E-lS ο.οααοοε ^ -οο -3.520S0E-Z1 o.oooaoe + ao 7.4S57Qe-2S ο.οοοααε- ^ οο AC 3) 0.00234106 a -oooooo 1.64447c-27 -3.98337S-10 0.QQQQQ £ < h0Q '2.92857E-15 O.OQOOQ £ < t-QQ 8.46236S-13 oa〇QQ〇e-Hao -5.98614S-23 O.QOOQO & -OQ A (4) 0.001938S7 O.aOQOQQ -1.71S15c -31 -3.SS491E-I2 Q.QQQOGE- ^ OQ 7.43877 ^ -17 Q.aaaGoe + oa -S.3S969e-22 ο.οααοαε + αο 2.3S53BE-25 0.0QGQQe-»-O0 A (s) O. QQ179SS1 0.QQQQ0Q -9.96Z5a £ -2S 3.445696-09 0. QQQQOE-rOQ 1.4S719E-13 · O.QQQQQEi-OQ -S.07132E «13 a. OooQoe-toa 1.U331H-21 q.oqqoqe ~ qo AC δ) 0.0Gia69QS Q.OQOOQO 4. + 4608E-32 S. (598S3E-U Q.QQQQQE-eOQ 3.06114E-1S a.aooQQe-f-oa 1.Z9I23E-21 0. OOQQOMO 2.32734 £ t27 Q. OQQOQe- ^ OQ reference wavelength = Π.4MM imaging The image side numerical aperture = 0.25 = 0.25

第21頁 C:\2D-CODE\90-10\90118732.ptd 538257 五、發明說明（19) 表2 :實施例2 (圖5 ) 元件編號半徑厚度. 直徑種類 OBJEKT INP 753-1539 217.5892 157.2983 1 aCI) -508.3959 ， AP£HTUR3L£N〇e Q.OGOO REP- 2 aC2〕 592.9977 157.6453 REFL 3 Αζ3) Α(4) -263.0251 186.9465 ilSFL 4 357.5155 464.9979 R£FL 5 a(S) -437.1855 110.6968 REFL β SILO Α(δ) INF 431.2631 311.3894 70.8868 非球面常數 12 14 16 13 20Page 21 C: \ 2D-CODE \ 90-10 \ 90118732.ptd 538257 V. Description of the invention (19) Table 2: Example 2 (Figure 5) Element number radius thickness. Diameter type OBJEKT INP 753-1539 217.5892 157.2983 1 aCI) -508.3959, AP £ HTUR3L £ N〇e Q.OGOO REP- 2 aC2] 592.9977 157.6453 REFL 3 Αζ3) Α (4) -263.0251 186.9465 ilSFL 4 357.5155 464.9979 R £ FL 5 a (S) -437.1855 110.6968 REFL β SILO Α (δ) INF 431.2631 311.3894 70.8868 Aspheric constant 12 14 16 13 20

—十 CF)Y + CG)Y ♦ CH)Y + C3〕Y 非球面曲率 iC E A F 3 G C H □ 3 AC l) -0.00009342 0.000000 3.Q984SE-29 S.02Q48£-1Q ο.αοοοοε十〇〇 -3.S9798S-I5 o.ooco〇E+ao 4.63491H-20 ο.οοοοοε 十oo -1.24487E-Z4 q . οοοαοε-τοα AC 2) 0.00094495 · -O.QOOOOQ O.QGOOOe-rQQ -a.S4008c-ll ο.οοοοοΕ+αο -a.2iaase-is O.OQQQQE-t^O -7.41356E-21 ο·οοοοοε+co -3.30250E-Z5 o. αοοαοε-^ο aC 3〕 0.00281349 0.QQOOQQ -3.93860E-27 -a.95729e-ia ο.οοοοοε+οο i.oaoaas-i4 Q. QQOOOE-tOQ -1.55198ε-18 0.00000&+·00 1.20451E-Z2 α. oooooe-rQO aC *0 0.00176899 0.7993S2 -1.S729SE-3Q -6.057695-10 o.ooaooe-foo -1.1482QE-1S o. oooooe-hoo -3.64542E-2Q o.〇G〇ooe+ao 2.50132E-2S ο. αοοαοε+ύο aC s) Q.00132073 O.QOOOOQ -8.779295-25 5.28849Ε-09 ο.αοοοοε^οο 1.32SQ7S-I3 o.οοοαοε+οα -2.78314Ε~18 o. ooooae-t-oo 7.00685£-22 ο.οοαοοε+οο aC s〕 • 0.00186381 a.OOGOOQ S.8Q814£-32 6.68738ε-Ι1 0. OQOQOE-fOa 3.06141E-1S 0.QOQQQ£+OQ 1.3438SE-21 Q.QOQOOe+OO 1.39691E-27 ο.αοαοοε+αο 參考波長=Β·4ΝΜ 成像比=0.25 像側孔徑=0.25—Ten CF) Y + CG) Y ♦ CH) Y + C3] Y Aspheric curvature iC EAF 3 GCH □ 3 AC l) -0.00009342 0.000000 3.Q984SE-29 S.02Q48 £ -1Q ο.αοοοοε 十〇〇- 3.S9798S-I5 o.ooco〇E + ao 4.63491H-20 ο.οοοοοε 十 oo -1.24487E-Z4 q. Οοοαοε-τοα AC 2) 0.00094495 · -O.QOOOOQ O.QGOOOe-rQQ -a.S4008c- ll ο.οοοοοΕ + αο -a.2iaase-is O.OQQQQE-t ^ O -7.41356E-21 ο · οοοοοε + co -3.30250E-Z5 o. αοοαοε- ^ ο aC 3] 0.00281349 0.QQOOQQ -3.93860E -27 -a.95729e-ia ο.οοοοοε + οο i.oaoaas-i4 Q. QQOOOE-tOQ -1.55198ε-18 0.00000 & + · 00 1.20451E-Z2 α. Oooooe-rQO aC * 0 0.00176899 0.7993S2- 1.S729SE-3Q -6.057695-10 o.ooaooe-foo -1.1482QE-1S o. Oooooe-hoo -3.64542E-2Q o.〇G〇ooe + ao 2.50132E-2S ο. Αοοαοε + ύο aC s) Q .00132073 O.QOOOOQ -8.779295-25 5.28849E-09 ο.αοοοοε ^ οο 1.32SQ7S-I3 o.οοοαοε + οα -2.78314Ε ~ 18 o. Ooooae-t-oo 7.00685 £ -22 ο.οοαοοε + οο aC s ] 0.00186381 a.OOGOOQ S.8Q814 £ -32 6.68738ε-Ι1 0. OQOQOE-fOa 3.06141E-1S 0.QOQ QQ £ + OQ 1.3438SE-21 Q.QOQOOe + OO 1.39691E-27 ο.αοαοοε + αο Reference wavelength = B · 4NM Imaging ratio = 0.25 Image side aperture = 0.25

IIHiH 第22頁 C:\2D-CODE\90-]0\90118732.ptd 538257 五、發明說明（20) 表3 :實施例3 (圖7 )IIHiH Page 22 C: \ 2D-CODE \ 90-] 0 \ 90118732.ptd 538257 V. Description of the invention (20) Table 3: Example 3 (Figure 7)

2 (GJRV)Y 2 2 1/2 1 + CI-CI+kKcurv) γ ) 4 Ο 3 ΙΟ + Ca)y + Ca)y + Cc)y C〇)y 12 14 IS 13 20 i- (ξ)υ + Cr)Y -»· Cg)y Ch)y + (J)y2 (GJRV) Y 2 2 1/2 1 + CI-CI + kKcurv) γ) 4 〇 3 IO + Ca) y + Ca) y + Cc) y C〇) y 12 14 IS 13 20 i- (ξ) υ + Cr) Y-»· Cg) y Ch) y + (J) y

元件編號半徑厚度 :直徑種類 α8]£ΚΤ 1 2 INF a CD 757.2557 -S55.7Q33 . 215.0671 RZfL α(2) ApzpmjRaLcNDe ο.ααοα S32.2766 173.9832 174.2476 REFL 3 aC3) -233.53S9 iaa.2262 R£FL 4 a(4) 794.6148 423.4357 RSrL a(S) -436.8293 110.5239 RErL 3 a(S〕 480.3400 310.5587 ^EFL 3IU3 INF 7Q.476S 非球面常數非球面曲率 κ c A F 3 G c H a 1 aC 1〕 ο.αααοοοαο α.αοαοοο 2.03931=-29 S.576346-10 ο · οοοοοε十00 -4.285052-15 Q.aaoooe-hOQ 6.16577E-2Q Q.QQQOOe-t-aO -I.427156-24 0. QQOOQE-f-aO aC 2〕 0.QQ09Z3S2 ο.ααοοοο -7.38639ε-30 -4.S06S7e-U Q.QQQQQE+OO -3.53053£-lS O.aQOQOE-fOQ -3.S20SOE-21 a.OQOQOErOO 7.4657〇e-2S a.Q〇Q〇a£-r〇o aC 3〕 0.Q0277S71 ο.αοαοοο 1.03438ε-27 -3.ZS329£-L0 O.QGOOOS-hOO -7.025235-IS 0. OOOOQE-rOO 5.33788c-19 a.oooaae+oo -3.32007ε-23 O.QOQGQ&rQQ A( 0.00138296 ο.οοααοο -5.3454ZS-31 -9.S1406£-12 o.oocaoe-foo S-06179e-lS α.αοοοαε+οο -9.93523S-21 α.αααοοε-^ο 1.330S4£-25 Q.OQQQOe+QO aC s) (3.00135523 ο.ααοοοο -1.0SQ73£-25 5.1573S£-09 ο.οοσοοε+οο 1.S4832S-13 a.ooaooe+oo -3.2aai2s-ia α.αοαοοε+οο 1.16863E-21 Q.QOOQOE-i-aO A〔 s) 0.00135397 ο.οοααοο 6.23447£-32 5.62264E-U Q.QGQQQE+OQ 2.9909βε-1δ o.aoaooe+oQ 1.29774E-21 O.QOOQQE-rOO 1.07497S.-27 Q.0QQQQE-t-00 參考波長=〖3.4NM 成像比3=0.25 像側孔徑=0.25 iiriiiii C:\2D-CODE\90-10\90118732.ptd 第23頁 538257 五、發明說明（21) 表4 :實施例4 (圖8 ) S件編號半徑厚度直徑 OBJEXT INf= 739.9343 1 A(D -659.9343 APERTURaLaNOe . Q.000G 188.S091 219.3872 2 a(2) 709.9848 219.1277 3 a(3) -492.0904 X79.7S99 4 847.3874 CC 1094.5501 577.4446 5 A(〇 -412.2S37 109.4460 6 A(5〕 452.2537 273.6442 BILD INF 71.0012Component Number Radius Thickness: Diameter Type α8] £ ΚΤ 1 2 INF a CD 757.2557 -S55.7Q33. 215.0671 RZfL α (2) ApzpmjRaLcNDe ο.ααοα S32.2766 173.9832 174.2476 REFL 3 aC3) -233.53S9 iaa.2262 R £ FL 4 a (4) 794.6148 423.4357 RSrL a (S) -436.8293 110.5239 RErL 3 a (S) 480.3400 310.5587 ^ EFL 3IU3 INF 7Q.476S aspheric constant aspheric curvature κ c AF 3 G c H a 1 aC 1) ο. αααοοοαο α.αοαοοο 2.03931 = -29 S.576346-10 ο · οοοοοεε00 -4.285052-15 Q.aaoooe-hOQ 6.16577E-2Q Q.QQQOOe-t-aO -I.427156-24 0. QQOOQE-f- aO aC 2] 0.QQ09Z3S2 ο.ααοοοο -7.38639ε-30 -4.S06S7e-U Q.QQQQQE + OO -3.53053 £ -lS O.aQOQOE-fOQ -3.S20SOE-21 a.OQOQOErOO 7.4657〇e-2S aQ〇Q〇a £ -r〇o aC 3] 0.Q0277S71 ο.αοαοοο 1.03438ε-27 -3.ZS329 £ -L0 O.QGOOOS-hOO -7.025235-IS 0. OOOOQE-rOO 5.33788c-19 a. oooaae + oo -3.32007ε-23 O.QOQGQ & rQQ A (0.00138296 ο.οοααοο -5.3454ZS-31 -9.S1406 £ -12 o.oocaoe-foo S-06179e-lS α.αοοοαε + οο -9.93523S- 21 α.αααοοε- ^ ο 1.33 0S4 £ -25 Q.OQQQOe + QO aC s) (3.00135523 ο.ααοοοο -1.0SQ73 £ -25 5.1573S £ -09 ο.οοσοοε + οο 1.S4832S-13 a.ooaooe + oo -3.2aai2s-ia α. αοαοοε + οο 1.16863E-21 Q.QOOQOE-i-aO A [s) 0.00135397 ο.οοααοο 6.23447 £ -32 5.62264EU Q.QGQQQE + OQ 2.9909βε-1δ o.aoaooe + oQ 1.29774E-21 O.QOOQQE- rOO 1.07497S.-27 Q.0QQQQE-t-00 reference wavelength = 〖3.4NM imaging ratio 3 = 0.25 image side aperture = 0.25 iiriiiii C: \ 2D-CODE \ 90-10 \ 90118732.ptd page 23 538257 5. Description of the invention (21) Table 4: Example 4 (Figure 8) S piece number radius thickness diameter OBJEXT INf = 739.9343 1 A (D -659.9343 APERTURaLaNOe. Q.000G 188.S091 219.3872 2 a (2) 709.9848 219.1277 3 a ( 3) -492.0904 X79.7S99 4 847.3874 CC 1094.5501 577.4446 5 A (〇-412.2S37 109.4460 6 A (5) 452.2537 273.6442 BILD INF 71.0012

RSFLRSFL

RE.CL REFL REfL REFL 非球面常數RE.CL REFL REfL REFL aspheric constant

CCURV)Y r 4 6 3 10 (C〕Y + 〇3〕Y is ia CG)Y + (H)Y + L· 1 + Cl-Cl+K〕C〇JRV) 221/2 ^ r ： 12 id r COY + C?)Y ^ 20 0)Y 非球面曲率 1C ε A P 3 G c H 0 : AC 1) 0.00046523 〇.〇〇〇〇〇〇 •3-23637E-23 -7.3632BH-U o.oooooe十00 1.36189E-15 o. οοοοαε-ταο -7.73130E-20 O.QOOQOE-hOO 8.54337Ξ-24 O.QQOQOE-i^Q A( Z) 0.00092527 . -0.Q000Q0 0.OOQQOe+OO -S.U521E-U O.OQQQQe+OQ -3.806875-16 o. οοοοοε-τοο -3.05S82E-21 O.QQQOOE+QO -7.83S97S-27 O.OQOOOE+OQ AC 3〕 0.00241893 0.000301 7.76365E-28 S.Q1337E-1Q O.QQOOQ£-hOQ 2.76322S-1S 0. OGOOGE^Q 1.650S3S-19 a.οοοοοε十oo -1.79843E-23 o.Qooooe+oo A( 4) 0.00112101 0.000000 2.29050E-2S 5.420535-09 O.QOOOQE-hOO 6.30201H-1S a .QOOOQE+QQ 6.1S162S-IS α.οοοοοε-ταο -2.1S921E-21 O.QOQQOE-hOO AC SD 0.00192607 0.00Q0QQ Q.OQQOOe+QQ 1.4Q503E-10 α.αααοοε-ί-οο 8.32770E-16 Q.QOQQOE-rQQ 3.64734E-21 0.qqqqqe+qq 5.66305E-26 Q.QQQQQE-hOO 參考波長=13·4ΝΜ 成像比=0.25 像側孔徑=0.23 Ηϋ· C:\2D-CODE\90-10\90118732.ptd 第 24 頁 538257CCURV) Y r 4 6 3 10 (C) Y + 〇3] Y is ia CG) Y + (H) Y + L · 1 + Cl-Cl + K] C〇JRV) 221/2 ^ r: 12 id r COY + C?) Y ^ 20 0) Y Aspheric curvature 1C ε AP 3 G c H 0: AC 1) 0.00046523 〇.〇〇〇〇〇〇 3-23637E-23 -7.3632BH-U o.oooooe Dec 1.36189E-15 o. Οοοοαε-ταο -7.73130E-20 O.QOOQOE-hOO 8.54337Ξ-24 O.QQOQOE-i ^ QA (Z) 0.00092527. -0.Q000Q0 0.OOQQOe + OO -S.U521E -U O.OQQQQe + OQ -3.806875-16 o. Οοοοοε-τοο -3.05S82E-21 O.QQQOOE + QO -7.83S97S-27 O.OQOOOE + OQ AC 3] 0.00241893 0.000301 7.76365E-28 S.Q1337E-1Q O.QQOOQ £ -hOQ 2.76322S-1S 0. OGOOGE ^ Q 1.650S3S-19 a.οοοοοοε oo -1.79843E-23 o.Qooooe + oo A (4) 0.00112101 0.000000 2.29050E-2S 5.420535-09 O.QOOOQE -hOO 6.30201H-1S a .QOOOQE + QQ 6.1S162S-IS α.οοοοοε-ταο -2.1S921E-21 O.QOQQOE-hOO AC SD 0.00192607 0.00Q0QQ Q.OQQOOe + QQ 1.4Q503E-10 α.αααοοε-ί- οο 8.32770E-16 Q.QOQQOE-rQQ 3.64734E-21 0.qqqqqe + qq 5.66305E-26 Q.QQQQQE-hOO reference wavelength = 13 · 4NM imaging ratio = 0.25 image side aperture = 0.23 Ηϋ · C: \ 2D-CODE \ 90-10 \ 90118732.ptd page 24 538257

圖1係一反射鏡之有效範圍。圖2係物鏡物平面上之環形場。圖3係投影物鏡兩任意反射鏡結構空間之定義。圖4係本發明投影物鏡之第一實施例，設六非球面反射鏡，其中第一反射鏡為凸面。圖5係本發明投影物鏡之第二實施例，設六非球面反射鏡，其中第一反射鏡為凹面。圖6a-6f係圖4投影物鏡六反射鏡之有效範圍。圖7係本發明投影物鏡之第三實施例，設六非球面反射鏡，其中第一反射鏡為傍軸平面。圖8係本發明投影物镑夕楚 ^ #工c / 鏡之第四實施例.，設五非球面及一球面反射鏡，其中第四反射鏡為球面。圖9係本發明六反射鏡投影你分。又〜物鏡第五與第六反射鏡之部圖1 0係設本發明物鏡之投影_， ?又〜曝光設備的基本結構圖。Figure 1 shows the effective range of a mirror. Figure 2 shows the annular field on the objective plane of the objective lens. Figure 3 is the definition of the structure space of two arbitrary mirrors of the projection objective. Fig. 4 is a first embodiment of the projection objective lens of the present invention, which is provided with a six aspherical mirror, wherein the first mirror is convex. Fig. 5 is a second embodiment of the projection objective lens of the present invention, which is provided with a six aspherical mirror, wherein the first mirror is concave. Figures 6a-6f are the effective ranges of the six-reflector objective lens of Figure 4; Fig. 7 is a third embodiment of the projection objective lens of the present invention, which is provided with six aspherical mirrors, wherein the first mirror is a paraxial plane. FIG. 8 is a fourth embodiment of the projection object of the present invention, # 工 c / mirror. A five aspheric surface and a spherical reflecting mirror are provided, and the fourth reflecting mirror is a spherical surface. Fig. 9 shows the projection of the six mirrors of the present invention. Part of the fifth and sixth mirrors of the objective lens. Fig. 10 is a projection diagram of the objective lens of the present invention, and again ~ a basic structural diagram of an exposure device.

C:\2D-OODE\90-10\90118732.ptd ---- 頁第25C: \ 2D-OODE \ 90-10 \ 90118732.ptd ---- page 25

Claims

538257 92, 2. 25 替換本曰 -ί^_9〇Π8732 六、申請專利範圍 1 · 一種短波長之微影術投影物鏡，射光瞳與一出射光瞳，以將一物 =又影物鏡設有一入狀環形場，該環形場具一對稱輛與一 ^於一像場，其為扇度，並設有 /、垂直於對稱軸之寬了第一（S1)、一第二（S2)、一第三（s —— 一第五（S5)、一第六反射鏡（S6)，農、一第四（S4)、每一反射鏡皆具一有效範圍，穿過於If轴設置，該有效範圍，其特徵為，又〜物鏡的光束射入第一、第二、第三、第四、第五、第的直徑受出射光瞳數值孔徑左右；，、反射鏡有效範圍有效範圍直徑介於〇及1 200 mm*NA之間。 2. 如申請專利範圍第！項之微影術投數值孔徑大於ο.1，且第一、第二、第三、第四H象側第六反射鏡有效範圍的直徑介於〇及3〇〇 _之間。弟五、 3. 如申請專利範圍第丨項之微影術投影物鏡，i -、第二、第三、第四、第五、第六反射鏡各具、結構空間，其在有效範圍由反射鏡前侧平行於光二一 j 度，第-、第：、第三、第四、第五、第六結構空間：:：度大於50 min，第五反射鏡結構空間的深度大於第五 /衣鏡直徑的三分之一，且各結構空間不被穿透。射 4. 如申請專利範圍第3項之微影術投影物鏡，其中所結構空間可平行於對稱軸延展，而不切割物鏡光程反射鏡的結構空間。 3另一 5·如申請專利範圍第1項之微影術投影物鏡，其中第538257 92, 2. 25 Replacement of this-^ _9〇Π8732 VI. Patent application scope 1 · A short-wavelength lithography projection objective lens, with an exit pupil and an exit pupil, so that one object = another shadow objective is provided with a Into an annular field, the annular field has a symmetrical vehicle and an image field, which is a fan, and is provided with /, a width perpendicular to the axis of symmetry. A third (s-a fifth (S5), a sixth mirror (S6), a farm, a fourth (S4), each mirror has an effective range, set through the If axis, the effective The range is characterized in that the diameter of the first, second, third, fourth, fifth, and third diameters of the light beam entering the objective lens is controlled by the numerical aperture of the exit pupil; 〇 and 1 200 mm * NA. 2. If the lithographic projection numerical aperture is greater than ο.1 in the scope of patent application, and the first, second, third, and fourth H image-side sixth mirrors The diameter of the effective range is between 0 and 300. 5. Brother 5. 3. The lithography projection of item 丨 in the scope of patent application Mirrors, i-, second, third, fourth, fifth, and sixth reflectors each have a structure space, and in the effective range, the front side of the mirror is parallel to the light j-degrees, the-,-: 3rd, 4th, 5th, and 6th structural space :: Degree is greater than 50 min, the depth of the 5th reflector's structural space is greater than the fifth / third of the diameter of the clothes mirror, and each structural space is not penetrated 4. Projection objectives such as the lithography projection objective in item 3 of the scope of patent application, wherein the structure space can be extended parallel to the axis of symmetry without cutting the structure space of the optical path reflector of the objective lens. 3 Another 5. If the scope of patent application The lithography projection objective of item 1, wherein

538257 六、申請專利範圍一、第二、第限範圍的邊緣圍，以及其中 6 ·如申請專反射鏡有效範 7·如申請專反射鏡在第三 8·如申請專反射鏡在第一 9·如申請專反射鏡頂點沿鏡到第一反射三、第部份， ’物鏡利範圍圍在第利範圍與第二利範圍與第二利範圍光轴到鏡的距538257 VI. Application of patent scopes I, II, and the edge of the limited range, and 6 of them. · If applying for a special mirror effective range 7 · If applying for a special mirror in the third 8 · If applying for a special mirror in the first 9 · If you apply for the special mirror's vertex along the mirror to the first and the third reflection part, the objective lens's range of interest is in the range of the second range of interest and the distance between the optical axis of the second range of interest and the distance of the mirror

四、第五、第六反射鏡皆具一環繞有該邊緣部份為2 mm至28 _之間的範光程無遮攔。其中第四其中第四其中第四其中第四弟1項之微影術投影物鏡二反射鏡與像平面之間c 弟1項之微影術投影物鏡反射鏡之間。第1項之微影術投影物鏡反射鏡之間。第1項之微影術投影物鏡第一反射鏡的距離（S4S1 )與第二反射離（S2S1)比值在下述範圍内：〇, 1 S4 S1 S2 S1 < 0, 9 1 0 ·如申請專利範圍第1項之微影術投影物鏡，其中第二反射鏡頂點沿光軸到第三反射鏡的距離（S2S3)與第四反射鏡到第三反射鏡的距離（S4S3 )比值在下述範圍内： 0,3 ^ ( S3S4) (S2 S3 ) <0, 9The fourth, fifth, and sixth mirrors all have a range of optical path that is surrounded by the edge part and is between 2 mm and 28 mm. Among them, fourth among them, fourth among them, and fourth among them, the lithography projection objective of item 1 is between the second reflector and the image plane, and the lithography projection objective of item 1 is between the reflector and the mirror. The lithography projection objective of item 1 is between the reflectors. The ratio of the distance between the first reflector (S4S1) and the second reflection distance (S2S1) of the lithography projection objective of item 1 is within the following range: 〇, 1 S4 S1 S2 S1 < 0, 9 1 0 The lithography projection objective of the range item 1, wherein the ratio of the distance (S2S3) of the vertex of the second mirror to the third mirror along the optical axis to the distance (S4S3) of the fourth mirror to the third mirror is within the following range : 0,3 ^ (S3S4) (S2 S3) < 0, 9

1 1 ·如申請專利範圍第1項之微影術投影物鏡，其中平均環形場半徑R與出射光瞳數值孔徑NA、第五與第六反射鏡距離（S5S6)、第五反射鏡與像平面距離（S5B)、第五與第1 1 · The lithography projection objective of item 1 of the scope of patent application, wherein the average annular field radius R and the exit pupil numerical aperture NA, the distance between the fifth and sixth mirrors (S5S6), the fifth mirror and the image plane Distance (S5B), fifth and first

C:\專利案件總檔案\90\90118732\90118732(替換)-].ptc 第 27 頁 538257 案號 90118732 六、申請專利範圍六反射鏡彎曲半徑r5， r6的關係為： R ^ tan ( arc sin ( ΝΑ) ) * {S5 Β) ^ {S5 S6) 』C: \ General file of patent cases \ 90 \ 90118732 \ 90118732 (replacement)-]. Ptc Page 27 538257 Case No. 90118732 Sixth, the scope of patent application Six mirrors bending radius r5, r6 The relationship is: R ^ tan (arc sin (ΝΑ)) * (S5 Β) ^ (S5 S6) 』

1 2 .如申請專利範圍第1項之微含一場點主光線入射角，其中所上的場點主光線入射角係介於〇 ° 1 3 ·如申請專利範圍第1項之微物鏡在第四反射鏡（S4)後方光方 1 4 ·如申請專利範圍第1項之微 (B)在第二反射鏡（S2)光程上。 1 5 ·如申請專利範圍第1項之微反射鏡為凸面，且第一、第二、反射鏡皆為非球面。 1 6 ·如申請專利範圍第1項之微反射鏡為傍軸平面，且第一、第第六反射鏡皆為非球面。 1 7 ·如申請專利範圍第丨項之微影術投影物鏡，進有反射鏡物場中間與1 8 °之間。影術投影物鏡，其向上具一中間像。' 影術投影物鏡，其影術投影物鏡，其 '第五弟三、第四影術投影物鏡，其二、第三、第一四反射鏡為凹面，且第第二反射鏡皆為非球面。 1 8 ·如申請專利範圍第1項之微反射鏡皆為非球面。 19·如申請專利範圍第1項之微影術投影物鏡，其卓三、第四、第五影術投影物鏡，其一步包對稱車由中投影中光闌中第一、第六中第一第五、中第一、第六中所有中最多影術投影物鏡，其1 2. If the micro-inclusion field has a main field incident angle of item 1 in the scope of patent application, where the main field incident angle of the field point is between 0 ° 1 3 Back light side of the four-mirror (S4) 1 4 · As the micro- (B) of item 1 of the scope of patent application is on the optical path of the second mirror (S2). 1 5 · If the micro-mirror in item 1 of the patent application is convex, and the first, second, and mirrors are aspherical. 16 · If the micro-mirror in item 1 of the patent application is a paraxial plane, and the first and sixth mirrors are aspherical. 1 7 · If the lithography projection objective of item 丨 of the patent application scope, enter between the middle of the objective field of the mirror and 18 °. Shadow projection objective with an intermediate image in the upward direction. 'Shadow projection lens, its shadow projection lens, its fifth, third and fourth shadow projection lenses, the second, third, and first four mirrors are concave, and the second mirror is aspherical . 1 8 · If the micro-mirrors in item 1 of the patent application are aspherical. 19. If the lithography projection objective of item 1 of the scope of the patent application, its third, fourth, and fifth shadow projection projection lenses, one step includes a symmetrical car from the first in the middle of the diaphragm, the first in the sixth Five, the first and sixth in all the most shadow projection lens,

538257538257

五反射鏡為非球面。 2 0 ·如申請專利範圍第丨9項之四反射鏡為球面。微影術投影物鏡，其中第 2 1 ·如申請專利範圍第1項之微至第六（S2S6)反射鏡依序為凹面面。影術投影物鏡、凸面、凹面其中第二凸面、凹 2 2 ·如申請專利範圍第}項之微像側為遠心。文〜術才又影物鏡，其中物鏡 2 3 · —種投影曝光設備，其特徵，％場之照明，置及—如申請專利7照射一環形 24. -種製造晶片之方法，係包園 =士投影物鏡\ 圍第2 3項之投影曝光設備。如申請專利範 2 5 · —種短波長之微影術投影物入射光瞳與-出射光瞳，以將影物鏡設有一扇狀環形場，該環形場具一對稱軸盥一古像场兵^ 度，並包含： ^ —直於對稱軸之覓一第一（S1)、一第二（S2)、一第三（S3)、四）、一第五（S5)及一第六反射鏡（S6)， - , 具對中光軸設置，該有效範圍，牙過技影物鏡的光束射入第，、第五及第六反射鏡有孔被左右：有效範圍直徑介其中，第一、第二、第三效範圍的直徑受出射光瞳數於0及1 20 0 mm*NA之間；其中，第一、第二、第三第四、第五、第六反射鏡各The five mirrors are aspherical. 2 0 · If the scope of patent application No. 丨 9 is four spherical mirrors. The lithography projection objective lens, in which the 21st, as described in the first patent application scope of the micro to sixth (S2S6) mirrors are sequentially concave. Shadow projection objective lens, convex surface, concave surface Among them, the second convex surface, concave surface 2 2 · If the micro-image side of the scope of application for patent is} telecentric. Wen ~ Shucai shadow objective lens, in which the objective lens 2 3 ·-a projection exposure equipment, its characteristics,% field illumination, and--such as the application for patent 7 to irradiate a ring 24.-a method of manufacturing wafers, the system package = Projection objective lens \ Projection exposure equipment around item 23. For example, a patent application of 25. A short-wavelength lithography projection object's entrance pupil and -exit pupil is used to set the shadow objective lens in a fan-shaped annular field with a symmetrical axis and an ancient image field soldier. ^ Degrees, and include: ^ — a first (S1), a second (S2), a third (S3), four), a fifth (S5), and a sixth mirror that are perpendicular to the axis of symmetry (S6),-, With centering optical axis setting, in this effective range, the beam passing through the dental objective lens enters the first, fifth, and sixth mirrors with holes left and right: the effective range diameter is between, the first, The diameters of the second and third effective ranges are between 0 and 120 mm * NA. The first, second, third, fourth, fifth, and sixth mirrors each

\\A326\專利案件總檔\90\90118732\90118732(替換H.ptc第 29 頁 538257\\ A326 \ Patent Case File \ 90 \ 90118732 \ 90118732 (Replace H.ptc, page 29 538257

案號901187叩六、申請專利範圍具—向後的結構空間，其在有效範圍由光轴具-深度，第―、第二、第三、第四射=側平行於構空間的深度大於50 -，第五反射I 弟、/六結於第五反射鏡直徑的三分之一，且各社工間的凍度大以及其巾，所有結構空間可平行於對稱皮：透’ 』物鏡光程或另一反射鏡的結構空間。而不切 26. —種短波長之微影術投影物鏡，該，瞳與-出射光瞳，以將—物場成像於二物像鏡場'有- ，狀環形場，該環形場具一對稱軸與一垂 j 度，並包含：且仏耵％軸之寬 :第一（si)、一第二（S2)、—第三（S3)、_ 第四（s 一第五（S5)及一第六反射鏡（S6)，其對中光軸設置，該皆具一有效範s，穿過投影物鏡的光束射入其中’第-、第=、第三、第四、第五及第六反射鏡有效範圍的直徑受出射光瞳數值孔徑左右：有效範圍直徑介於0及1 20 0 mm* NA之間；以及其中，第四反射鏡頂點沿光軸到第一反射鏡的距離 (S4S1)與第二反射鏡到第一反射鏡的距離（S2S1)比值在下述範圍内：〇, < (S4 S7 ) 一 (S2 S1 ) <0, 9 2 7· —種短波長之微影術投影物鏡，該投影物鏡設有Case No. 901187 6. The scope of the patent application is-backward structural space, which is in the effective range by the optical axis-depth, the first, second, third, and fourth shots = the depth parallel to the structural space is greater than 50- The fifth reflection I, / 6 knot is one third of the diameter of the fifth mirror, and the degree of freezing between the social workers is large and its towels, and all structural spaces can be parallel to the symmetrical skin: through the optical path of the objective lens or Structural space of another mirror. Without cutting 26. — a kind of short-wavelength lithography projection objective, the pupil and -exit pupil to image the -object field on the two objective image field 'yes', a ring-shaped field, the ring field has a The axis of symmetry and a vertical j degree, and include: And the width of the 仏耵% axis: first (si), a second (S2),-third (S3), _ fourth (s a fifth (S5) And a sixth reflector (S6), which is set to the center of the optical axis, which has an effective range s, and the light beam passing through the projection objective enters the '-th,-=, third, fourth, fifth, and The diameter of the effective range of the sixth mirror is determined by the numerical aperture of the exit pupil: the effective range diameter is between 0 and 120 mm * NA; and the distance from the vertex of the fourth mirror to the first mirror along the optical axis The ratio of (S4S1) to the distance from the second mirror to the first mirror (S2S1) is within the following range: 〇, < (S4 S7) ((S2 S1) < 0, 9 2 7 Lithography projection objective provided with

\\八326\專利案件總檔·\90118732\90118732(替換卜^阶第3〇頁 538257 案號 90118732 年六、申請專利範圍\\ Eight 326 \ Patent case file \ 90118732 \ 90118732 (Replace Bu ^ ^ page 30 538257 Case No. 90118732 Year 6. Scope of patent application

入射光瞳與一出射光瞳，以將一你p 1 扇狀環形場，該環形場具一對稱轴盥一於一像％，其為度，並包含： /、—垂直於對稱軸之寬第二（S3)、一第四（S4)、 ’其對中光軸設置，牙過投影物鏡的光束射入一第一（S1)、一第二（S2)、一一第五（S5)及一第六反射鏡（S6) 每一反射鏡皆具一有效範圍，該有效範圍，An entrance pupil and an exit pupil to fan a p 1 fan-shaped annular field with an axis of symmetry and an image%, which are degrees, and include: /, — the width perpendicular to the axis of symmetry Second (S3), fourth (S4), 'the optical axis is aligned, and the light beam passing through the projection objective enters a first (S1), a second (S2), and a fifth (S5) And a sixth mirror (S6), each mirror has an effective range, the effective range,

其中，第一、第二、第三、第四、第五及第六反射鏡有效範圍的直徑受出射光瞳數值孔徑左右：有效範圍直徑介於0及1 20 0 mm*NA之間；以及其中第二反射鏡頂點沿光軸到第三反射鏡的距離（S2S3) 與第四反射鏡到第三反射鏡的距離（S4S3)比值在下述範圍内： 0,3 < (S4 ) J~S2 S3) <0, 9Among them, the diameter of the effective range of the first, second, third, fourth, fifth and sixth mirrors is influenced by the numerical aperture of the exit pupil: the effective range diameter is between 0 and 120 mm * NA; and The ratio of the distance (S2S3) from the vertex of the second mirror to the third mirror along the optical axis to the distance (S4S3) from the fourth mirror to the third mirror is in the following range: 0,3 < (S4) J ~ S2 S3) < 0, 9

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