530096 A7 B7 五、發明說明（1 ) 〔技術領域〕 本發明係爲關於在真空氣相內處理基板之真空處理裝 置的技術領域；特別是關於在豎立基板的狀態下進行處理 同時形成多層膜之濺射處理裝置。 〔先行技術〕 過去，採用如第1 4圖中圖號1 0 0所示之裝置，作 爲用以形成多層膜之濺射裝置。 此濺射裝置1 0 0具有放入取出室1 0 1及運送自動 機112及成膜室103、113。 被運入到放入取出室1 0 1之基板，被構成爲利用運 送自動機1 1 2從放入取出室1 0 1運送到成膜室1 0 3 第1 5圖表示上述成膜室1 0 3的詳細構 室103具有真空槽1 1 1。在真空槽1 1 1 板（hotplate)兼用的基板載置部1 0 4。另 1 1 1通到運送室1 10 ;在運送部1 10內 自動機1 1 2。 運送自動機1 1 2被構成爲具有朝水平方 之臂1 1 6 ;在該臂1 1 6先端部分的伸叉1 平地載置基板1 0 6，就可以朝水平方向運送 ，使其至基板載置部1 0 4上的所定位置爲止 在基板載置部1 0 4設有複數個孔，在各 基板昇降機構1 2 0所具有的複數個銷柱1 〇 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4 - 請。 先 閱、 背 面 之* 注 意 k 頁 I 訂 成。此成膜 內配置有熱 外真空槽 配置有運送 向自由伸縮 1 7上，水 基板1 0 6 移動。 孔內收容有 5 ° 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 五、發明說明（2 ) f奋先閱讀背面之注意事項再^^本貢) 在基板1 0 6使其位於基板載置部1 0 4上方的狀態 下，使基板昇降機構1 2 0動作，且使銷柱1 0 5移動至!1 上方，則基板1 0 6搭載於銷柱1 0 5先端。在該狀態下 縮回臂1 1 6，從基板1 06與基板載置部1 〇4之間抽 出伸叉，回到運送室1 1 0內後，使銷柱1 〇 5移動到下 方，將各銷柱1 0 5收容到基板載置部1 0 4的孔內，則 基板1 0 6變更動到基板載置部1 0 4。 其後，使其動作被設在基板載置部1 0 4之基板保持 機構，且將基板1 0 6使其密接保持在基板載置部1 0 4 表面。在此基板載置部1 0 4安裝回轉軸2 4 ;在回轉軸 1 2 4直接連結馬達（未圖示）：驅動馬達使回轉軸 1 24回轉而使其豎立基板載置部1 04，則基板1 06 與基板載置部10 6同時豎立。 在真空槽1 1 1的壁面設置陰極1 0 8 ;在密接於基 板載置部1 0 4的狀態下豎立基板1 0 6，則該基板 1 0 6，與被設在陰極1 0 8之靶體物平行地被對向配置 〇 經濟部智慧財產局員工消費合作社印製 在該狀態下電壓施加到陰極1 0 8，則靶體物被濺射 ，在經豎立之基板1 0 6表面形成第1層的薄膜。 經此在基板1 0 6的表面形成薄膜後，此基板利用運 送自動機1 1 2從成膜室1 0 3運出而運入到成膜室 1 1 3 ;在成膜室1 1 3進行第2層的成膜處理。 其後，基板從成膜室1 1 3運送到放入取出室1 〇 1 ，取出到裝置外。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ 5 - 530096 ___— B7___ 五、發明說明（3 ) 以上所說明過之成膜室1〇3，113，由於基板 106進行移動或豎立時不滑動，所以在真空槽111內 不致產生粉塵；另外因在豎立狀態下基板1 〇 6表面形成 薄膜，所以就是從靶體物或其近旁產生粉塵也不致付著在 基板1 0 6表面，因而得到無缺陷且高品質之薄膜。 不過’成膜室103，113，因如第15圖所示分 別只具有1個陰極1〇8，所以在各成膜室1〇3， 1 1 3內只能形成單層膜。 因此，形成多層膜時，必須多數個成膜室；例如，如 液晶顯示裝置用的玻璃基板般，從4 0 Ommx 5 0 0 mm至更大面積的基板被要求大面積化之裝置，成膜室所 占用的空間增大。進而，因必須在複數個成膜室間移動基 板，所以會造成基板的移動時間變長，降低產量之問題點 (請先閱讀背面之注意事項再 i I 本頁) 訂： -線： 〔發明所欲解決之課題〕530096 A7 B7 V. Description of the Invention (1) [Technical Field] The present invention relates to the technical field of a vacuum processing apparatus for processing a substrate in a vacuum gas phase; in particular, it relates to processing in a state of standing a substrate while forming a multilayer film Sputtering device. [Preceding Technology] In the past, the apparatus shown in Fig. 14 as shown in Fig. 100 was used as a sputtering apparatus for forming a multilayer film. This sputtering apparatus 100 includes a loading / unloading chamber 101, a transfer robot 112, and film forming chambers 103 and 113. The substrate carried into the loading and unloading chamber 1 0 1 is configured to be transferred from the loading and unloading chamber 1 0 1 to the film forming chamber 1 0 3 by using the transfer robot 1 1 2. The detailed structure chamber 103 of 0 has a vacuum tank 1 1 1. A substrate mounting portion 104 serving as a hot plate is also used in the vacuum chamber 1 1 1. The other 1 1 1 leads to the conveying room 1 10; in the conveying section 1 10, the automaton 1 1 2. The transport robot 1 1 2 is configured to have a horizontal arm 1 1 6; the fork 1 at the leading end of the arm 1 1 6 is placed flat on the substrate 1 and can be transported horizontally to the substrate. A plurality of holes are provided in the substrate mounting portion 104 until a predetermined position on the mounting portion 104, and a plurality of pins 10 in each of the substrate lifting mechanisms 120 are provided. This paper standard applies Chinese national standards ( CNS) A4 size (210 X 297 mm) -4-Please. Read first, back * Note k pages I order. In this film formation, a heat is placed inside, an outer vacuum tank is provided, and a conveyance is provided. The water base plate 10 is moved to and retracted freely. Contained in the hole is 5 ° Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 530096 A7 B7 V. Description of the invention (2) f Please read the precautions on the back before ^^ Ben Gong) Place it on the substrate 1 0 6 In a state above the placement portion 104, the substrate lifting mechanism 120 is moved and the pin 105 is moved above! 1, and the substrate 106 is mounted on the tip of the pin 105. In this state, the arm 1 1 6 is retracted, the fork is pulled out between the substrate 10 06 and the substrate placing portion 104, and after returning to the inside of the transport chamber 1 10, the pin 10 is moved downward, and Each pin 105 is accommodated in the hole of the substrate mounting portion 104, and the substrate 106 is changed to the substrate mounting portion 104. Thereafter, the substrate holding mechanism provided on the substrate mounting portion 104 was operated, and the substrate 106 was held in close contact with the surface of the substrate mounting portion 104. A rotary shaft 2 4 is mounted on the substrate mounting portion 104; a motor (not shown) is directly connected to the rotary shaft 1 2 4: driving the motor to rotate the rotary shaft 1 24 to make the substrate mounting portion 104 stand up, The substrate 1 06 and the substrate placing portion 106 are erected simultaneously. A cathode 10 8 is provided on the wall surface of the vacuum tank 1 1 1; and a substrate 10 6 is erected in a state of being in close contact with the substrate mounting portion 104, the substrate 106 and the target provided on the cathode 108 The object is arranged in parallel to the consumer ’s cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In this state, the voltage is applied to the cathode 108, and the target is sputtered to form a first surface on the vertical surface of the substrate 106. 1 layer of film. After a thin film is formed on the surface of the substrate 106, the substrate is transported out of the film formation chamber 103 by a transport robot 1 12 and is carried into the film formation chamber 1 1 3; Film formation of the second layer. After that, the substrate is transported from the film formation chamber 1 13 to the loading and unloading chamber 10 1 and taken out of the apparatus. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) _ 5-530096 ___— B7___ V. Description of the invention (3) The film forming chambers described above are 103, 113. It does not slide when moving or standing, so no dust is generated in the vacuum tank 111. In addition, a thin film is formed on the surface of the substrate 1 06 in the standing state, so even if dust is generated from the target or its vicinity, the substrate 1 is not attached. 0 6 surface, so a defect-free and high-quality film is obtained. However, since the 'film-forming chambers 103 and 113 have only one cathode 108 as shown in Fig. 15, only a single-layer film can be formed in each of the film-forming chambers 103 and 113. Therefore, when forming a multilayer film, a large number of film forming chambers are required; for example, as a glass substrate for a liquid crystal display device, a substrate having a large area from 400 mm to 500 mm is required to be formed by a device having a large area for film formation. The space occupied by the room increases. Furthermore, since the substrate must be moved between a plurality of film-forming chambers, it will cause a long substrate moving time and reduce the problem of yield (please read the precautions on the back before this page). Order: -Line: [Invent Problems to be solved]
經濟部智慧財產局員工消費合作社印製 - _IL 本發明係爲因應於上述過去技術的要求而進行硏發； 其目的係爲提供可以在豎立基板的狀態下進行處理，進而 能在同真空槽內形成多層膜之真空處理裝置。 〔用以解決課題之手段〕 爲了解決上述課題，本發明申請專利範圍第1項，係 爲具有載置基板之基板載置部，及一端介由回轉構件被設 置在前述基板載置部之腕部，及被設置在前述腕部的他端 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱1 " 530096 Α7 Β7 五、發明說明（4 ) ’能以中心軸線爲中心回轉所構成之驅動軸等所形成之基 板豎立裝置；其特徵爲：由前述基板載置部與前述腕部成 爲水平的水平姿勢使前述基板載置部豎立的情況，前述基 板豎jz裝置被構成爲能促成使其前述驅動軸的回轉力傳達 到刖述腕部，與前述腕部同時使其豎立前述基板載置部之 第1豎立姿勢、及介由前述回轉構件使前述驅動軸的回轉 力傳達到前述基板載置部，維持前述腕部爲水平的狀態， 並且使其豎立前述基板載置部之第2豎立姿勢。 本發明申·§靑專利範圍第2項，係被構成爲具有以水平 的姿勢重疊在上下的至少2片基板載置部，在前述各基板 載置部分別設有驅動軸，使其回轉該驅動軸，而分別豎立 前述各基板載置部之基板豎立裝置；其特徵爲··被構成爲 前述基板載置部當中，在被置於上方之基板載置部，設置 朝上下方向使其通過水平狀態的基板之基板通過孔，在該 基板通過孔的周邊部設有掛鈎，當該掛鈎突出到前述基板 通過孔內時，在其掛钩上載置前述基板。 本發明申請專利範圍第3項，係爲如申請專利範圍第 2項之基板豎立裝置，其中被構成爲當前述各基板載置部 重疊在上下時，被配置在前述各基板載置部的下方之基板 昇降銷柱的先端可以上昇到此前述各基板載置部還上方的 位置爲止。 本發明申請專利範圍第4項，係爲真有能真空排氣的 真空槽，及被配置在該真空槽內的基板豎立裝置之真空處 理裝置；其特徵爲：被構成爲前述基板豎立裝置爲具有載 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） tr 先 閱· η- 背 面· 注 意 事 項 頁 經濟部智慧財產局員工消費合作社印？衣 530096 A7 B7 五、發明說明（5 ) (請先閱讀背面之注意事項再本頁) 置基板的基板載置部，及一端介由回轉構件而被在前述基 板載置部的腕部，及被設置在前述腕部的他端，能以中心 軸線爲中心回轉所構成的驅動軸等之基板豎立裝置，從前 述基板載置部與前述腕部成爲水平之水平姿勢使其豎立前 述基板載置部的情況，前述基板豎立裝置促成使前述驅動 軸的回轉力傳達到前述腕部，與前述腕部同時使其豎立前 述基板載置部之第1豎立姿勢，及維持前述腕部爲水平的 狀態’並且使其豎立前述基板載置部之第2豎立姿勢。 本發明申請專利範圍第5項，係爲如申請專利範圍第 4項之真空處理裝置，其中更而具有回轉台；前述回轉台 被構成爲被配置在前述真空槽的底部，可以在水平內回轉 ;前述基板豎立裝置被構成爲安裝在前述回轉台，前述回 轉台回轉時，能與前述回轉台同時回轉。 經濟部智慧財產局員工消費合作社印制衣 本發明申請專利範圍第6項，係爲具有能真空排氣的 真空槽，及被配置在該真空槽內的基板豎立裝置等之真空 處理裝置；其特徵爲：前述基板豎立裝置被構成爲：具有 以水平的姿勢重疊在上下的至少2片基板載置部，在前述 各基板載置部分別設置驅動軸，使其回轉該驅動軸，而分 別豎立前述各基板載置部之基板豎立裝置；被構成爲前述 各基板載置部當中，在被配置於上方之基板載置部，設有 朝上下方向使其通過水平狀態的基板之基板通過孔，在該 基板通過孔的周邊設有掛鈎，當該掛鈎突出到前述基板通 過孔內時，在其掛鈎上使其載置前述基板。 本發明申請專利範圍第7項，係爲如申請專利範圍第 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8 · 530096 A7 _______ B7 五、發明說明（6 ) (請先閲讀背面之注意事項再ί本頁) 6項’其中更而具有回轉台；前述回轉台被構成爲配置在 則述真空槽的底部，可以在水平面內回轉，前述基板豎立 裝置被構成爲安裝在前述回轉台，當前述回轉台回轉時， 能與前述回轉台同時回轉。 本發明申請專利範圍第8項，係爲真空處理裝置；其 特徵爲：具有在側壁具備複數個處理手段，能真空排氣之 真空槽’及基板豎立裝置；前述基板豎立裝置，就是保持 前述基板也能維持水平狀態或是豎立狀態，在豎立的狀態 下使.其分別對向於前述複數個處理手段而將前述基板配置 在前述真空槽內。 本發明申請專利第9項，係爲如申請專利範圍第8項 ’其中更而具有回轉台；前述回轉台被構成爲配置在前述 真空槽的底部，可以在水平面內回轉，前述基板豎立裝置 被構成爲安裝在前述回轉台，當前述回轉台回轉時，能與 前述回轉台同時回轉。 本發明申請專利第1 〇項，係爲如申請專利範圍第8 項之真空處理裝置，其中前述處理手段爲濺射用陰極。 經濟部智慧財產局員工消費合作社印制π 本發明申請專利範圍第1 1項，係爲真空處理裝置； 其特徵爲：具有能真空排氣的真空槽，及被設置在前述真 空槽側壁的窗口，及被安裝在前述窗口周圍的框體，及被 安裝在前述框體，對向於前述窗口所配置的處理手段，及 被配置在前述真空槽底部的回轉台，及被設在前述回轉台 上的複數個基板豎立裝置；前述基板豎立裝置被構成爲在 前述的豎立狀態下能使基板對向於前述處理手段；前述回 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-9 - 530096 A7 _____ B7 五、發明說明（7 ) 轉台被構成爲能與前述基板豎立裝置同時在水平面內回轉 本發明申請專利第1 2項，係爲如申請專利範圍第1 1項之真空處理裝置，其中前述處理手段爲濺射用陰極。 本發明申請專利第1 3項，係爲如申請專利範圍第1 1項之真空處理裝置，其中前述複數個基板豎立裝置具有 載置部；前述基板載置部被構成爲可以維持水平狀態 或是豎立狀態，在前述豎立的狀態下介由前述窗口可以對 向於前述處理手段；前述基板載置部當中，至少1個基板 載置部具有遮蔽部；前述遮蔽部被構成爲在具有該遮蔽部 之基板載置部爲豎立的狀態下，可以覆蓋前述窗口。 本發明申請專利第1 4項，係爲如申請專利範圍第1 3項之真空處理裝置，其中前述遮蔽部被形成爲板狀。 本發明申請專利第1 5項，係爲如申請專利範圍第1 3項之真空處理裝置，其中被構成爲在豎立前述基板的狀 態下，當與前述處理手段對向時，能使被形成在前述框體 ，處理手段及基板載置部之間的空間形成爲氣密的狀態。 本發明申請專利第1 6項，係爲如申請專利範圍第1 5項之真空處理裝置，其中在前述真空槽的內壁或是前述 基板載置部的任何一者或兩者，設置密封材；前述密封材 被構成爲在豎立前述基板的狀態下與前述處理手段對向時 ，被配置在前述窗口周邊的前述真空槽內壁與前述基板載 置部之間。 本發明申請專利第1 7項，係爲如申請專利範圍第1 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10- 請 先 閱 讀 背 面 之 注 意 事 項 頁 經濟部智慧財產局員工消費合作社印製 530096 A7 ______ B7__ 五、發明說明（8 ) 5項之真空處理裝置；其中前述處理手段爲濺射用陰極 且被構成爲在被形成於前述框體、處理手段及基板載置部 之間的空間內，可以導入濺射氣體。 依據上述過本發明的基板豎立裝置，被構成爲具有基 板載置部、及回轉構件、及腕部、及驅動軸，促成從基板 載置部與腕部成爲水平的水平姿勢，使驅動軸的回轉力傳 達到腕部’使其豎立基板載置部及腕部之第丨豎立姿勢、 及從塞板載置部與腕部成爲水平的水平姿勢，介由回轉構 件使驅動軸的回轉力傳達到基板載置部，腕部保持水平原 樣，使基板載置部豎立之第2豎立姿勢。 將驅動軸的回轉力傳達到腕部而使其回轉，從水平姿 勢使其錯直豎立基板載置部的情況，基板載置部與腕體一 體化’以驅動軸爲中心立起，促成基板載置部的表面朝向 基板豎裝置外方之姿勢（第1豎立姿勢）。 他方’使驅動軸的回轉力傳達到回轉構件，腕部保持 水平原樣，使基板載置部豎立的情況，基板載置部以回轉 構件爲中心立起，促成基板載置部的表面朝向基板豎立裝 置外方之姿勢（第2豎立姿勢）。 經濟部智慧財產局員工消費合作社印製 此樣’第1豎立姿勢及第2豎立姿勢，都是鉛直豎立 基板載置部，使基板載置部的表面朝向基板豎立裝置的外 方’但因第1豎立姿勢以驅動軸爲中心立起基板載置部及 腕部’第2豎立姿勢以回轉構件爲中心只立起基板載置部 ’所以第1、第2豎立姿勢，形成爲基板載置部的伸起方 向爲相互間相反方向；在基板載置部的表面載置基板，則 11 (請先閱讀背面之注意事項再本頁} 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 530096 A7 __ B7 五、發明說明（9 ) 第1、第2豎立姿勢，基板表面相互間面向相反方向。 將此樣的基板豎立裝置配置在真空槽內，在其真空槽 內使其對向配置2個陰極，在各陰極設置靶體物的情況， 在保持基板的狀態下，基板載置部形成爲第1豎立姿勢， 則可以使基板表面對向配置在一方的陰極；他方基板載置 部形成爲第2豎立姿勢，則可以使基板表面對向配置在他 方的陰極。 因而，使基板表面對向配置在一方的陰極，而將一方 的靶體物材濺射到基板表面進行第1層的成膜處理後，使 基板表面對向配置在他方的陰極，而將他方的靶體物材濺 射至基板表面進行第2層的成膜處理，所以能在單一的真 空槽內形成二層的積層膜。 因此，形成二層膜的情況，如過去因不必要2個成膜 室，所以其佔用部分縮小成膜的佔用空間。進而，在二個 成膜室間使其移動基板的時間不須要，所以能使其提高產 量。 本發明其他構成之基板豎立裝置，具有以水平姿勢重 疊於上下的至少2片基板載置部，在各基板載置部分別設 有驅動軸，使其回轉該驅動軸，而分別豎立各基板載置部 0 基板載置部，當以水平姿勢使掛鈎突出到基板通過孔 時可以保持基板’當收容掛鈎時可以通‘過基板，所以收容 保持基板之基板載置部及其他基板載置部的掛鈎，所被保 持的基板形成爲通過基板通過孔而能移動到其他的基板載 (請先閱讀背面之注意事項再 -- 本頁：Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-_IL The present invention is developed in response to the requirements of the above-mentioned past technology; its purpose is to provide processing that can be performed in the state of a standing substrate, so that it can be placed in the same vacuum tank. Vacuum processing device for forming a multilayer film. [Means to solve the problem] In order to solve the above-mentioned problem, the first item of the scope of patent application of the present invention is a substrate mounting portion having a substrate on which the substrate is mounted, and one end of which is provided on the wrist of the substrate mounting portion via a rotating member. And the other papers set on the aforementioned wrist, the size of this paper applies the Chinese National Standard (CNS) A4 (210 X 297 Public Love 1 " 530096 Α7 Β7) 5. Description of the invention (4) 'Can be centered on the central axis A substrate erecting device formed by a rotating drive shaft and the like; characterized in that the substrate erecting device is constituted by the substrate erecting portion being placed in a horizontal posture in which the substrate erecting portion and the wrist portion are horizontal, and the substrate erecting device is configured In order to facilitate the transmission of the rotation force of the drive shaft to the wrist, the first upright posture of the substrate mounting portion is made to stand at the same time as the wrist, and the rotation force of the drive shaft is passed through the rotation member. It is conveyed to the said board | substrate mounting part, maintaining the said wrist part in a horizontal state, and making it the 2nd standing posture of the said board | substrate mounting part. This invention claims. Two items are structured to have at least two substrate mounting portions overlapping each other in a horizontal posture. Each of the substrate mounting portions is provided with a driving shaft to rotate the driving shaft, and each of the substrates is erected. The substrate erecting device of the mounting portion is characterized in that: it is constituted as the substrate mounting portion described above, and a substrate passing portion provided above the substrate mounting portion is provided with a substrate passing hole for passing the substrate in a horizontal state in the vertical direction, A hook is provided at the periphery of the substrate passing hole, and when the hook protrudes into the substrate passing hole, the substrate is placed on the hook. The third item of the scope of patent application of the present invention is the second item of the scope of patent application. The substrate erecting device of this item is configured such that when the aforementioned substrate mounting portions are overlapped up and down, a tip of a substrate lifting pin disposed below the aforementioned substrate mounting portions may be raised to the aforementioned substrate mounting portions. The fourth item in the scope of patent application of the present invention is a vacuum tank that can be vacuum exhausted, and the vacuum of the substrate erection device arranged in the vacuum tank. The device is characterized in that the above-mentioned substrate erecting device is provided with a paper-carrying paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) tr read-ahead · η- back · Caution Page Wisdom of the Ministry of Economic Affairs Printed by the employee ’s consumer cooperative of the Property Bureau? Clothing 530096 A7 B7 5. Description of the invention (5) (Please read the precautions on the back before this page) The substrate mounting part on which the substrate is placed, and one end is placed on the aforementioned substrate through the rotating member. The wrist portion of the mounting portion and a substrate erecting device such as a driving shaft which is provided at the other end of the wrist portion and can be rotated around the central axis as a center. The horizontal posture from the substrate mounting portion to the wrist portion is horizontal. When the substrate mounting portion is erected, the substrate erection device facilitates transmitting the rotation force of the drive shaft to the wrist portion, and simultaneously maintains the first standing posture of the substrate mounting portion at the same time as the wrist portion, and maintains The wrist portion is in a horizontal state, and the second upright posture of the substrate mounting portion is caused to stand up. Item 5 of the scope of patent application of the present invention is a vacuum processing device as described in item 4 of the scope of patent application, which further includes a rotary table; the rotary table is configured to be arranged at the bottom of the vacuum tank, and can be rotated in a horizontal direction. The substrate erecting device is configured to be mounted on the turntable, and when the turntable is rotated, it can rotate simultaneously with the turntable. The sixth item of the patent application scope of the present invention is the printed clothing of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, which is a vacuum processing device having a vacuum tank capable of vacuum exhaust and a substrate erecting device arranged in the vacuum tank; The substrate erecting device is characterized in that it has at least two substrate placing portions overlapping each other in a horizontal posture, and each of the substrate placing portions is provided with a drive shaft to rotate the drive shaft and stand upright. The substrate erecting device of each of the substrate placing sections is configured as a substrate passing hole provided in the substrate placing section disposed above the substrate placing section arranged above to pass through the substrate in a horizontal state. A hook is provided around the substrate passage hole, and when the hook protrudes into the substrate passage hole, the substrate is placed on the hook. Item 7 of the scope of patent application of the present invention is that if the paper size of the scope of patent application is applied to the Chinese paper standard (CNS) A4 (210 X 297 mm) -8 · 530096 A7 _______ B7 V. Description of the invention (6) ( Please read the precautions on the back of this page first, and then this page) 6 of which has a turntable; the turntable is configured to be placed on the bottom of the vacuum tank, and can be rotated in a horizontal plane. Installed on the turntable, when the turntable rotates, it can rotate simultaneously with the turntable. The eighth item of the patent scope of the present invention is a vacuum processing device; it is characterized by having a vacuum tank with a plurality of processing means on the side wall and capable of vacuum exhausting, and a substrate erecting device; the substrate erecting device is to hold the substrate It is also possible to maintain the horizontal state or the erected state, and use it in the erected state. The substrates are arranged in the vacuum chambers respectively facing the plurality of processing means. Item 9 of the present invention is a rotary table as described in item 8 of the scope of the patent application; the rotary table is configured at the bottom of the vacuum tank and can be rotated in a horizontal plane. It is configured to be mounted on the turntable, and when the turntable is rotated, it can rotate simultaneously with the turntable. Item 10 of the present invention is a vacuum processing device such as item 8 of the scope of patent application, wherein the aforementioned processing means is a cathode for sputtering. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs π The scope of patent application for the present invention is item 11 which is a vacuum processing device; it is characterized by having a vacuum tank capable of vacuum exhaust and a window provided on the side wall of the aforementioned vacuum tank , And a frame installed around the window, and a processing means arranged to the window, a turntable arranged at the bottom of the vacuum tank, and a turntable arranged at the bottom of the vacuum tank, A plurality of substrate erecting devices on the substrate; the aforementioned substrate erecting device is configured to enable the substrate to face the aforementioned processing means in the aforementioned erect state; the aforementioned paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297) (Centi) -9-530096 A7 _____ B7 V. Description of the invention (7) The turntable is configured to be able to rotate in the horizontal plane with the aforementioned substrate erection device at the same time. The vacuum processing apparatus, wherein the processing means is a cathode for sputtering. Item 13 of the patent application of the present invention is a vacuum processing device such as item 11 of the scope of patent application, wherein the plurality of substrate erecting devices has a mounting portion; the substrate mounting portion is configured to maintain a horizontal state or In the erected state, the processing means can be opposed to the processing means through the window in the erected state; at least one of the substrate placing portions has a shielding portion; and the shielding portion is configured to have the shielding portion. When the substrate mounting portion is in an upright state, the window can be covered. Item 14 of the patent application of the present invention is a vacuum processing device such as item 13 of the patent application scope, wherein the aforementioned shielding portion is formed in a plate shape. Item 15 of the patent application of the present invention is a vacuum processing device such as item 13 of the scope of patent application, which is configured to be formed in a state where the aforementioned substrate is erected and opposed to the aforementioned processing means. The space between the processing means and the substrate mounting portion is formed in an airtight state. Item 16 of the patent application of the present invention is a vacuum processing device such as item 15 of the scope of patent application, in which a sealing material is provided on one or both of the inner wall of the vacuum chamber or the substrate mounting portion. The sealing material is configured to be disposed between the inner wall of the vacuum chamber and the substrate placing portion around the window when the sealing material faces the processing means while the substrate is erected. The 17th item of the patent application of this invention is the same as the first paper scope of the patent application. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -10- Please read the note on the back page of the Ministry of Economy Printed by the Consumer Cooperative of the Property Bureau 530096 A7 ______ B7__ V. Vacuum processing device of item 5 of the invention (8); wherein the aforementioned processing means is a sputtering cathode and is configured to be formed in the aforementioned frame, processing means and substrate A sputtering gas can be introduced into the space between the mounting portions. According to the above-mentioned substrate erecting device of the present invention, the substrate erecting device is configured to have a substrate mounting portion, a rotating member, a wrist portion, and a drive shaft, and promote a horizontal posture from the substrate mounting portion and the wrist portion to a horizontal posture to drive the drive shaft. Rotating force is transmitted to the wrist 'to make the substrate mounting portion and the wrist stand in the upright posture, and the horizontal posture from the plug plate mounting portion and the wrist to be horizontal, and the turning force of the driving shaft is transmitted through the turning member At the substrate mounting portion, the wrist portion was kept horizontal as it was, and the second standing posture in which the substrate mounting portion stood upright. When the rotation force of the drive shaft is transmitted to the wrist and rotated, and the substrate mounting portion is erected upright from a horizontal posture, the substrate mounting portion is integrated with the wrist body, and the substrate is raised with the driving shaft as the center to promote the substrate. A posture in which the surface of the mounting portion faces outside the substrate erecting device (a first erect posture). Others' transmit the turning force of the drive shaft to the turning member, keep the wrist horizontally as it is, and erect the substrate mounting portion, and the substrate mounting portion is raised with the turning member as the center, so that the surface of the substrate mounting portion is erected toward the substrate. Position outside the device (second upright position). This is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 'The first and second erection postures are both vertical erection of the substrate mounting portion, so that the surface of the substrate mounting portion faces the outside of the substrate erection device. 1Erecting position raises the substrate mounting portion and the wrist portion with the drive shaft as the center. "Second standing posture sets the substrate placing portion with the rotating member as the center." Therefore, the first and second standing postures are formed as the substrate placing portion. The directions of extension are opposite to each other; if the substrate is placed on the surface of the substrate mounting section, 11 (please read the precautions on the back before this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 530096 A7 __ B7 V. Description of the invention (9) In the first and second erect postures, the substrate surfaces face each other in opposite directions. This substrate erecting device is arranged in a vacuum tank, and the vacuum tank is used in the vacuum tank. When two cathodes are arranged opposite to each other, and a target is provided on each of the cathodes, the substrate mounting portion is formed into the first upright posture while the substrate is held, so that the substrate surface can be arranged opposite to one cathode; When the square substrate placing portion is formed in the second upright posture, the substrate surface can be disposed opposite to the other cathode. Therefore, the substrate surface can be disposed opposite to one cathode, and one target material can be sputtered onto the substrate. After the first layer is formed on the surface, the substrate surface is arranged opposite to the cathode, and the other target material is sputtered onto the substrate surface to perform the second layer of film formation. Therefore, a single vacuum can be applied. A two-layer laminated film is formed in the tank. Therefore, in the case of forming a two-layer film, as in the past, two film-forming chambers were unnecessary, so the occupied area was reduced. The space occupied by the film was further reduced. The time required for moving the substrate is not required, so that it can increase the yield. The substrate erection device of the other structure of the present invention has at least two substrate mounting portions overlapping each other in a horizontal posture, and each substrate mounting portion is provided with a drive Shaft to rotate the drive shaft to erect each substrate mounting section 0 substrate mounting section, the substrate can be held when the hook is protruded to the substrate through hole in a horizontal posture when the hook is received Can pass through the substrate, so the substrate holding part that holds and holds the substrate and the hooks of other substrate placing parts, the substrate being held is formed to be able to be moved to other substrates through the substrate through hole (please read the note on the back first) Matters again-this page:
I 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） .12- 530096 A7 B7 五、發明說明（1〇 ) 置部之狀態；朝上方向移動該基板，使其位於其他基板載 置部的基板通過孔，使其他基板載置部的掛鈎突出到基板 通過孔，而能在其他的基板載置部保持基板，在基板載置 部間能使其移動基板。 因此樣在基板載置部間能移動基板，所以相互間朝不 同的方向豎立，朝不同的方向面向基板表面，若在面向基 板表面的各個方向各別配置1個陰極，則將基板使其載置 在一個基板載置部，將基板表面使其對向配置於所定的陰 極，而將被設在該陰極的靶體物濺射到基板表面進行第1 層的成膜處理後，使基板從載置基板的基板載置部移動到 其他的基板載置部，將基板表面使其對向配置在其他的陰 極，而將其他的靶體物濺射到基板表面進行第2層的成膜 處理。 進而，本發明的其他基板豎立裝置，具有複數個基板 豎立裝置及回轉台及處理手段；回轉台以鉛直方向的回轉 軸爲中心在水平面內回轉時，可以使其回轉複數個基板豎 立裝置；在各基板豎立裝置保持基板的狀態下，可以使基 板對向於處理手段。 一例，在真空槽內各設置3個處理手段及基板豎立裝 置，在水平狀態下從上依順序第1、第2、第3基板豎立 裝置被配置在回轉台上的情況，首先使第1片的基板保持 在水平狀態下被配置在最上位之第1基板豎立裝置，其次 豎II桌1基板暨1L裝置而對向於第1處理手段，並且使第 2片的基板保持在水平狀態下所被配置之第2基板豎立裝 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-13 - (請先閱讀背面之注意事項再？k本頁) . --線· 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 五、發明說明（11 ) 置。 (請先閱讀背面之注意事項再本頁) 繼而，以第1處理手段處理第1片的基板，其後以所 定角度使其回轉回轉台，而以所定角度回轉第丄〜第3基 丰反豎立裝置，使第1片的基板對向於第2處理手段，並且 使其豎立第基板豎立裝置，使第2片的基板對向於第1 處理手段。 在此狀態下，以第2處理手段處理第1片的基板，並 且以第1處理手段處理第2片的基板，而可以同時處理2 片的基板。因此，特別是當連續處理複數片基板時，可以 比過去更縮短處理所須要的時間。 --線· 另外，依據上述過本發明之真空處理裝置，利用配置 在真空槽內之基板豎立裝置，可以使基板的表面依順對向 於被設置在真空槽側壁之複數個處理手段，例如對向於濺 射用陰極，且可以對基板表面依順施予濺射所形成之成膜 處理。 此樣，基板表面朝向複數個陰極，可以將各別的靶體 物濺射到基板表面；可以在1個的真空槽內形成多層膜。 經濟部智慧財產局員工消費合作社印製 因此，形成多層膜的情況，因不須要複數個成膜室， 所以可以縮小成膜室所佔用的空間。進而，因形成爲不須 要爲了在成膜室間移動基板的時間，所以能使其提高產量 〇 另外’在本發明的其他構成，具有真空槽及基板豎立 裝置之真空處理裝置，具有能在水平面內回轉之回轉台； 基板豎立裝置，被安裝在回轉台，可以與回轉台同時回轉 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱）-14 - 530096 A7 __ B7 五、發明說明（12 ) 〇 因而，保持基板之基板豎立裝置，當成爲水平的狀態 時，回轉回轉台而使其回轉基板豎立裝置，在來到陰極的 位置處，使基板成爲豎立狀態下，而能朝真空槽內的任意 陰極的方向面向基板的表面。 另外’依據本發明的其他真空處理裝置，被構成爲複 數個基板豎立裝置，具有基板載置部；基板載置部當中， 至少1個基板載置部，具有板狀的基板載置部，能形成水 平狀態或是豎立狀態，在豎立的狀態下可以對向於處理手 段。 真空處理裝置爲濺射裝置，處理手段爲濺射用的靶體 物的情況，當新的靶體物配置在真空槽時，必須預先使其 一定量濺射該良好的靶體物，而形成靶體物的良好表面狀 態後（以下，稱成前置濺射），在成膜對象的基板使其成 膜。過去進行前置濺射，對向於靶體物使其配置模擬的基 板，將所定膜厚的薄膜形成在模擬的基板上。 此時，使用玻璃基板作爲模擬的基板，但玻璃基板由 於強度較弱，無法形成厚膜，所以若不頻更換並且形成複 數片的玻璃基板，則無法進行充分的前置濺射，由於玻璃 基板的更換時間，因而濺射須要長時間。 另外，也考慮使用強度較強的金屬板作爲模擬基板， 但原本玻璃基板用所設計之運送自動機，由於無法將金屬 板運入到真空槽內，所以使用金屬板作爲模擬基板’實際 上則是不可能。 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -15- (請先閱讀背面之注意事項再 --- 本頁)I Printed by the Intellectual Property Bureau of the Ministry of Economy ’s Consumer Cooperatives. The paper size is in accordance with the Chinese National Standard (CNS) A4 (210 x 297 mm). 12- 530096 A7 B7 V. Description of the invention (1〇) The state of the Ministry; The substrate is moved in the upward direction so that the substrate passing holes in the other substrate placing portions are made, and the hooks of the other substrate placing portions protrude to the substrate passing holes, so that the substrate can be held in the other substrate placing portions, and the substrate placing portions can be held in the substrate placing portions. Can make it move the substrate. Therefore, the substrate can be moved between the substrate mounting parts, so they stand in different directions from each other and face the substrate surface in different directions. If one cathode is arranged in each direction facing the substrate surface, the substrate is placed on it. The substrate is placed on a substrate mounting portion, and the substrate surface is arranged to face a predetermined cathode, and a target object provided on the cathode is sputtered onto the substrate surface to perform the first-layer film forming process, and the substrate is removed from the substrate. The substrate placing portion on which the substrate is placed is moved to another substrate placing portion, the substrate surface is arranged opposite to the other cathode, and other targets are sputtered onto the substrate surface to perform the second-layer film forming process. . Further, other substrate erection devices of the present invention include a plurality of substrate erection devices, a turntable, and a processing means; when the turntable is rotated in a horizontal plane around a rotation axis in the vertical direction, the plurality of substrate erection devices can be rotated; Each of the substrate erecting devices can face the processing means while holding the substrate. As an example, in the case where three processing means and a substrate erecting device are installed in the vacuum tank, and the first, second, and third substrate erecting devices are arranged on the turntable in order from the top, the first piece is firstly placed. The first substrate erecting device is arranged at the highest position while maintaining the horizontal substrate, and the second substrate 1 and the 1L device are erected next to the first processing means, and the second substrate is kept horizontally. The second substrate that is configured is installed vertically. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -13-(Please read the precautions on the back first? This page). --Line · Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 530096 A7 B7 V. Description of Invention (11). (Please read the precautions on the back first, then this page.) Then, the first substrate is processed by the first processing method, and then it is turned to the turntable at a predetermined angle, and the third to third bases are turned at a predetermined angle. The anti-erecting device makes the first substrate to face the second processing means, and makes the second substrate erect device to make the second substrate to face the first processing means. In this state, the first substrate is processed by the second processing means, and the second substrate is processed by the first processing means, and the two substrates can be processed simultaneously. Therefore, especially when a plurality of substrates are continuously processed, the time required for processing can be shortened more than in the past. --Line · In addition, according to the above-mentioned vacuum processing apparatus of the present invention, by using a substrate erecting device arranged in a vacuum tank, the surface of the substrate can be aligned with a plurality of processing means provided on the side wall of the vacuum tank, such as It is opposite to the cathode for sputtering, and the film formation process by sputtering can be applied to the substrate surface in order. In this way, the substrate surface faces a plurality of cathodes, and respective targets can be sputtered onto the substrate surface; a multilayer film can be formed in a single vacuum chamber. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, in the case of forming a multilayer film, the space occupied by the film forming room can be reduced because it does not require multiple film forming rooms. Furthermore, it is formed so that it does not require time for moving the substrate between the film-forming chambers, so that it can increase the yield. In addition, in another configuration of the present invention, a vacuum processing device having a vacuum tank and a substrate erecting device is provided. Rotary table with internal rotation; The substrate erection device is installed on the rotary table, which can be rotated at the same time as the rotary table. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) -14-530096 A7 __ B7 V. Description of the invention (12) 〇 Therefore, when the substrate erection device holding the substrate is in a horizontal state, the rotary table is rotated to rotate the substrate erection device. When the substrate comes to the cathode position, the substrate is erected. It can face the surface of the substrate toward any cathode in the vacuum chamber. In addition, according to another vacuum processing apparatus of the present invention, it is configured as a plurality of substrate erecting devices, and includes a substrate mounting portion. Among the substrate mounting portions, at least one substrate mounting portion includes a plate-shaped substrate mounting portion. Form a horizontal state or an erected state, in the erected state, you can face the processing means. When the vacuum processing device is a sputtering device and the processing means is a sputtering target, when a new target is placed in a vacuum tank, it must be sputtered in advance to a certain amount to form a good target. After the target has a good surface state (hereinafter referred to as pre-sputtering), a film is formed on the substrate to be filmed. In the past, pre-sputtering was performed, and a thin film having a predetermined film thickness was formed on a simulated substrate with a target substrate having a simulated substrate disposed thereon. At this time, a glass substrate is used as the simulated substrate, but the glass substrate cannot be formed into a thick film due to its weak strength. Therefore, if the glass substrate is not replaced frequently and a plurality of glass substrates are formed, sufficient pre-sputtering cannot be performed. Replacement time, so sputtering takes a long time. In addition, it is also considered to use a strong metal plate as the analog substrate. However, the original glass substrate was designed with a transport robot. Since the metal plate cannot be transported into the vacuum tank, the metal plate is used as the analog substrate. It is impossible. This paper size is applicable to China National Standard (CNS) A4 specification (210 x 297 mm) -15- (Please read the precautions on the back before --- this page)
.丨線J 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 五、發明說明（13 ) 不過在本發明，基板載置部的至少1個，例如具有板 遮蔽部，當基板載置部成爲豎立的狀態而對向於靶體 物/時’因可以覆蓋視窗，所以在遮蔽部覆蓋視窗的狀態下 _射靶體物，則可以在遮蔽部形成薄膜，且可以不用模擬 的基板進行前置灘射。 因此，如同過去由於不須要基板更換所要的時間，所 以比過去縮短時間進行前置濺射。 進而，依據本發明的其他真空處理裝置，在基板豎立 的狀態下，當對向於處理手段時，例如利用將密封材設置 在基板載置部或是真空槽的內部，可以將由框體，處理手 段及基板所構成之空間形成爲氣密的狀態。 因而，利用複數個處理手段處理複數個基板的情況， 當以1個處理手段處理所定的基板之際，由於所定基板的 處理氣相能與其他基板的處理氣相隔離，所以對所定的基 板、及其他的基板，可以個別地進行不同的處理。當經濺 射在基板表面形成薄膜之際，可以對所定的基板進行反應 性濺射，對其他的基板進行通常的濺射處理。 經濟部智慧財產局員工消費合作社印製 〔實施形態〕 以下，參照圖面說明本發明的實施形態。 第1 ( a )圖中圖號3係爲從上方直視本發明真空處 理裝置的一實施形態之斷面圖；具有真空槽11及運送室 1〇。 在真空槽11內設有基板昇降機構（未圖示），被構 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-16 - 530096 A7 -- B7 五、發明說明,(14 ) 成爲利用真空泵（未圖示），可以將內部真空排氣。 (請先閱讀背面之注意事項再^Ν4·Ι) 在真空槽1 1所相對向的二壁面，設置各1個視窗（ 未圖示）；在各窗口，分別裝著各1個的陰極8:、8 2 〇 各陰極8^、 82被構成爲從窗口面對真空槽11內。 基板豎立裝置31，如第1(b)、 1(c)圖所示 ’具有板狀的基板載置部3 2，及腕部3 3、回轉構件 3 4、驅動軸3 5。 基板載置部3 2，其一面形成爲載置面3 7，將基板 載置在該載置面上後，可以利用保持機構（未圖）保持。 此基板載置部3 2通常爲水平（此狀態，以下稱爲水 平姿勢）：在該狀態下載置面3 7面向上方。回轉構件 3 4的一端被安裝在基板載置部3 2的側面；以中心軸線 2 1爲中心能所定角度回轉。 在回轉構件3 4的他端安裝腕部3 3的一端，腕部 3 3的他端安裝驅動軸3 5的一端，驅動軸3 5以其中心 線2 2爲中心能所定角度回轉。驅動軸3 5的他端被安裝 於馬達3 6 ’馬達3 6回轉（以下，所謂「回轉」也包含 回轉角未滿3 6 0 °的回轉），則可以回轉驅動軸3 5。 經濟部智慧財產局員工消費合作社印制农 在腕部3 3的內部設置皮帶等的動力傳達機構（未圖 示）及動力切換機構（未圖示），利用動力切換機構，驅 動軸3 5的回轉力，也可以傳達到腕部3 3及回轉構件 3 4° 當驅動軸3 5的回轉力傳達到腕部3 3時，藉由動力 必換機構，而形成回轉構件3 4與基板載置部3 2被固定 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）· 17 - 530096 A7 __ B7 五、發明說明（15 ) (請先閱讀背面之注意事項再@本頁) 的狀態，回轉腕部3 3則基板載置部3 2與腕部3 3 —體 化後豎立；他則，當驅動軸3 5的回轉力傳達到回轉構件 3 4時，藉由動力切換機構，解除回轉構件3 4與基板載 置部3 2的固定狀態，以動力傳達機構，驅動軸3 5的回 轉力被傳達到回轉構件，回轉驅動軸3 5，則腕部3 3保 持水平原樣只豎立基板載置部3 2。 利用此樣的基板豎立裝置3 1，從基板載置部3 2與 腕部3 3爲水平之水平姿勢，驅動馬達3 6則以中心軸線 2 2爲中心回轉驅動軸3 5。動作動力切換機構，驅動軸 3 5的回轉力傳達到腕部3 3的情況，基板載置部3 2與 腕部3 3 —體化後豎立。馬達3 6回轉所定角度後使其停 止驅動軸35 ;當停止驅動軸35時，如第1 (d)圖所 示，可以在7 0°〜9 0°的範圍豎立的狀態下（第1豎 立姿勢）使其靜止基板載置部3 2。 經濟部智慧財產局員工消費合作社印製 他則，基板載置部3 2成爲水平姿勢後，切換動力切 換機構的動作，驅動馬達3 6而使其回轉驅動軸3 5，則 驅動軸3 5的回轉力介由動力傳達機構傳達到回轉構件 3 4，以中心軸線2 1爲中心回轉回轉構件3 4，腕部 3 3保持水平原樣只豎立基板載置部3 2。 馬達3 6經回轉所定角度後使其停止驅動軸3 5 ;當 停止驅動軸35時，如第1(e)圖所示，可以在70° 〜9 0°的範圍豎立的狀態下（第2豎立姿勢）使其靜止 基板載置部3 2。 上述過的基板豎立裝置31中第1豎立姿勢（第1 ( 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -18 - 530096 A7 B7 五、發明說明（16 ) d)®)及第2豎立姿勢（第1 (e)圖）都是形成爲基 板載置部32在70°〜90。的範圍豎立之狀態；第1 姿勢係爲以驅動軸3 $爲中心豎立基板載置部3 2， 第2豎立姿勢則是以回轉構件3 4爲中心豎立，所以第1 、第2豎立姿勢，基板載置部32相互間朝相反方向豎立 ’載置面3 7也是相互間面向相反方向。 在具有此樣基板豎立裝置31之本實施形態的真空處 理裝置，基板載置部3 2被配置在真空槽1 1內使其第1 聲立姿勢爲載置面37平行地對向於一方的陰極8 i (第1 (d)圖），第2豎立姿勢則是載置面37平行地對向於 他方的陰極82 (第1 1 (e)圖）。 在此真空處理裝置3，利用濺射法將薄膜形成在基板 ’最初，以運送系（未圖示）從運送室1 0使水平狀態的 基板運送到真空槽1 1內，且使其載置在水平姿勢的基板 載置部3 2之載置面3 7，以保持機構（未圖示）使其密 接保持在載置面37的表面。 繼而，使其回轉驅動軸3 5而昇起基板載置部3 2， 成爲第1豎立姿勢（第1 (d)圖）。如上述，第1豎立 姿勢則是載置面3 7平行地對向配置在一方的陰極8 1，所 以基板表面平地地配置在陰極8 i。 在該狀態下所定的電壓施加到一方的陰極8 !。在一方 的陰極8!設有A 1 (鋁）靶體物（未圖示）：此A 1靶體 物濺射到基板表面，在基板表面形成第1層的薄膜（A 1 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） -19 - (請先閱讀背面之注意事項再本頁) 訂· --線： 經濟部智慧財產局員工消費合作社印製 530096 A7 — B7 五、發明說明（17 ) 所定膜厚的A 1薄膜形成在基板表面後，電壓停止施 加到一方的陰極8 i，中止濺射。 其後，驅動馬達3 6以所定角度使其回轉驅動軸3 5 ，而將基板載置部3 2倒下而使其回歸到水平姿勢。回歸 到水平姿勢後驅動馬達3 6而使其以所定角度回轉回轉構 件34，基板載置部32成爲第2豎立姿勢（第1 (e) 圖）。如上述過，因第2豎立姿勢爲載置面37平行地對 向配置在他方的陰極82，所以基板表面平行地配置在陰極 82。 在該狀態下電壓施加到他方的陰極8 2，則在他方的陰 極82設置Ti (鈦）靶體物（未圖示）；因濺射Τι靶體 物’所以在所豎立狀態的基板表面形成第2層的薄膜（ 丁 1 )。 繼而，驅動馬達3 6而只以所定角度使其回轉回轉構 件3 4，基板載置部3 2回歸到水平姿勢後，以運送系（ 未圖示）從真空槽1 1將基板運出到運送室1 〇，取出到 裝置外。 如以上所說明過，在本發明的真空處理裝置3 ，具有 基板豎立裝置31 ;可以將基板表面，以第1、第2豎立 姿勢分別平行地對向配置在陰極8 i、8 2，所以基板載置 部3 2形成第1豎立姿勢，將被設置在一方的陰極8 :之 A 1靶體物濺射到基板表面而形成A 1膜後，在相同真空 槽1 1內，基板載置部3 2形成第2豎立姿勢，將他方的 陰極8 2濺射到基板表面，可以在基板表面形成τ i膜；在 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -20 - (請先閱讀背面之注意事項再#本頁) ->0 . •線： 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（18 ) 單一的真空槽1 1內，可以將丁 i及A 1的2層膜形成在 基板表面。 因此，形成之層膜的情況，因如過去不須要2個成膜 室，所以該所佔用的部分可以縮小成膜室所佔用的空間。 然而，上述的基板豎立裝置3 1，在腕部3 3內部設 有皮帶等的傳力傳達機構及動力切換機構，但本發明並不 限於此，驅動軸3 5的回轉力可以傳達到腕部3 3及回轉 構件3 4的任何一方；若爲具有得以取得第1豎立姿勢及 第2.豎立姿勢之機構即可。 另外，使用板狀的基板載置部3 2，但本發明並不限 於此，例如使用框體狀的基板載置部亦可。 以下，說明本發明的其他實施形態。 第2 ( a )圖的圖號3 3係爲表示本發明其他實施形 態之真空處理裝置。此真空處理裝置3 3具有真空槽 3 0及運送室40。 真空槽3 0的一壁面’面向運送室4 0 ;在不面向運 送室40之真空槽30的三壁面，各設置1個窗口（未圖 示）；在各窗口，裝著第〜第3陰極38:-383。各 陰極3 8 1〜3 8 3內的表面被構成爲從窗口面向真空槽3 0內。 在真空槽30內，設置基板豎立裝置41;被構成爲 利用真空泵（未圖示），可以將真空槽3 0內真空排氣。 基板豎立裝置41’如第1(b)、 1(c)圖所示，具 有第1〜第3基板載置部42^〜423以及回轉軸45ι (請先閱讀背面之注意事項再本頁) 士 線： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 21 530096 A7 B7 五、發明說明（19 ) 〜4 5 3。 (請先閱讀背面之注意事項再本頁) 第1〜第3基板載置部42:〜423,如第2 (c) 圖所示，都形成水平狀態，被配置成從上依第1、第2、 第3基板載置部42l、 422、 423的順序重疊。 在第1〜第3基板載置部4 2 :〜4 23的側面分別安 裝第1〜第3驅動軸45i〜453 ;第1〜第3驅動軸 4 5 !〜4 5 3只以所定角度回轉，則以各別的中心軸線 5 3!〜5 33爲中心，使其豎立第1〜第3基.板載置部4 〜423，而形成爲在70°〜90°的範圍豎立的狀 育旨〇 在第1〜第3基板載置部4 2 4 2 3相互間朝不同 的方向豎立；各基板載置部4 2 :〜4 2 3相互間面向不同 的方向。此處，當各基板載置部4 4 23成爲豎立的 狀態時，分別使其平行地對向於第1、第2、第3陰極 ;線- 3 8 1 . 382、383° 各基板載置部42，如第3 (a)、3 (b)圖示， 係爲由在中央具有比基板還大的基板通過孔4 9之框體 4 8所形成；使其朝基板通過孔4 9的上下方向可以通過 經濟部智慧財產局員工消費合作社印製 基板。 在此框體4 8的背面設置突出到基板通過孔4 9之4 個掛鈎4 7 :〜4 7 4 ;各掛鈎4 7 ^〜4 7 4，以軸4 6 ! 〜4 6 4爲中心，經所定角度回轉，而突出到基板通過孔 4 9 ;當已突出時則使基板可以載置到掛鈎4 7 !〜4 7 4 上。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）· 22 - 530096 A7 __ B7 五、發明說明（2〇 ) 使用具有上述過基板豎立裝置41之本實施形態的真 空處理裝置3 3，形成薄膜的情況，預先從運送室4 0， 利用運送自動機的伸叉，水平狀態的基板被運入到真空槽 3 0內，在基板豎立裝置4 1的上方靜止。此時，基板豎 立裝置41的第1〜第3基板載置部42i〜423預先被 形成爲水平狀態；基板以水平的狀態被配置在第1基板載 置部4 2 1的上方。 在基板豎立裝置4 1的下方配置基板昇降機構4 4 ; 此基板昇降機構4 4具有能上下作動的複數個基板昇降銷 柱5 1ι、5 12。此昇降銷柱5 11、5 12，當移動到上 方時，通過各基板載置部4 2i〜4 23的基板通過孔4 9 ，其先端可以位於比第1基板載置部4 2 ^還上方。 在使基板5 0位於第1基板載置部4 2 :上的狀態下， 使昇降銷柱5 1 :、5 1 2移動到上方，則基板搭載在昇降 銷柱5 1 !、5 1 2的先端。 在使其突出第1基板載置部4 2 i的掛鈎4 7之狀態下 ，從基板5 0與第1基板載置部4 2 :之間抽出伸叉而回到 運送室1 0內後，昇降銷柱5 1 τ、5 1 2移動到下方，則 基板搭載到掛鈎4 7上，從伸叉移往第1基板載置部4 2 i (第4 (a)圖、第4 (b)圖）。 在此狀態下，利用保持機構（未圖示）使基板密接保 持在第1基板載置部4 2 i，以所定角度使其回轉第1驅動 軸4 5 1而將第1基板載置部4 2 i形成爲豎立的狀態，則 基板5 0的表面平行地對向配置在第1陰極3 8:。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 23 - (請先閱讀背面之注意事項再9本頁) -^1·- ,線_ 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 五、發明說明（21 ) (請先閱讀背面之注意事項再本頁) 在第1陰極3 82設置Mo (鉬）靶體物（未圖示）； 在平行地對向配置基板表面與第1陰極3 8 ^的狀態下’電 壓施加到第1陰極3 8:，則濺射Mo靶體物，在豎立的狀 態下，第1圖的薄膜（Mo )形成在基板表面。 其次，使其回轉第1驅動軸4 5 1而使第1基板載置部 4 2 !回歸到水平的狀態（第4 ( a )圖、第4 ( b )圖） 〇 繼而，使昇降銷柱5 1 i、5 1 2移動到上方，先端使 其抵接到基板5 0的背面（第4 ( c )圖）。在此狀態下 ，收容至此爲止載置了基板5 0之第1基板載置部4 2 !的 掛鈎4 7 τ、4 7 2，則基板5 0介由基板通過孔4 9能朝 上下方向自由地移動。 --線- 此時，使其突出下方第2基板載置部4 2 2的掛鈎 571、572，下降昇降銷柱511、512(4(己）圖 )。因此，基板50被載置在第2載置部422的掛鈎 57!、572上（第 5 (a)圖）。 經濟部智慧財產局員工消費合作社印製 此樣，基板5 0從第1基板載置部4 2 τ變更載置到第 2基板載置部4 22，並且使其下降昇降銷柱5 1 i、 5 1 2，而收容在基板保持機構4 4後，第1基板載置部 4 2 1再度成爲暨的狀（弟5 ( b )圖），則以所定角 度使其回轉第2驅動軸4 52，而能使其豎立第2基板載置 部4 2 2，且能將所保持之基板5 0表面，平行地對向配置 在第2陰極3 8 2。 在第2陰極3 82設有A 1 (鋁）靶體物（未圖示）； 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-24 - 530096 A7 B7 五、發明說明（22 ) 在基板5 0的表面對向配置在第2陰極3 82的狀態下，所 定電壓施加到第2陰極，則A 1靶體物濺射到基板5 0的 表面，在基板50的表面形成第2層的薄膜（A1)。 繼而，使其以所定角度回轉第2驅動軸4 52，而將第 2基板載置部4 2 2回歸到水平的狀態，與上述同樣地使其 上昇昇降銷柱5 1 i、5 1 2，其先端抵接到基板5 0的背 面，收容第2基板載置部422的掛鈎57:、572，形 成爲介由基板通過孔4 9能上下作動基板的狀態下，使其 下降昇降銷柱5 1 X、5 12而使其將基板載置到第3基板 載置部4 23的掛钩6 7 1、6 72上。 其後，再度使其豎立第2基板載置部4 2 2而成爲豎立 狀態，且形成能豎立第3基板載置部4 2 3的狀態。 從此狀態能使其以所角度回轉第3驅動軸4 5 3，則豎 立第3基板載置部4 23 ;將所保持的基板5 0形成爲豎立 的狀態，而能將基板表面平行地對向，配置在第3陰極3 8 2 〇 在第3陰極3 83設置Ti (鈦）靶體物；所定電壓施 加到第3陰極3 8 3，則T i靶體物濺射到基板5 0的表面 ，在基板50的表面形成第3層的薄膜（Ti)。 經此在基板5 0的表面形成3層的薄膜，再度以所定 角度使其回轉第3驅動轉4 53，將第3基板載置部4 23 使其回歸到水平狀態，昇降銷柱5 1 i、5 1 2移動到上方 。因此，基板50搭載於昇降銷柱51^、 512的先端而 上昇。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-25 - (請先閱讀背面之注意事項再 --- 頁) --線· 經濟部智慧財產局員工消費合作社印制衣 530096 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（23 ) 基板5 0上昇到所定的高度爲止，再度將伸叉伸入到 真空槽3 1內’使其位於基板5 〇的下方。在此狀態下， 昇降銷柱5 1 i、5 1 2移動到下方，則基板5 0在水平的 狀態下被載置在伸叉上。在伸叉上載置基板5 〇後，使伸 叉從真空槽3 1移動到運送室4 0而將基板運出到運送室 4 0，取出到裝置外。 如上述過’在本發明其他實施形態之真空處理裝置3 3 ’具有基板豎立裝置41，使基板50成爲豎立的狀態 ，而能將基板5 0的表面朝不同的三方向面向，所以將分 別設置在朝三方向配置的陰極3 8 3 8 3之合計3種靶 體物，使其在1個真空槽3 0內依順序濺射到基板5 0的 表面，而可以形成3層膜。 經此樣，在一個真空槽3 0內，因可以將3層膜積層 在基板5 0的表面，所以形成3層膜的情況，因不須要如 過去的3個真空槽，所以該所佔用的部分可以縮小真空槽 所佔用的空間。進而，因不須要在真空槽間使其移動基板 的時間，所以能使其提高產量。 然而，在上述的基板豎立裝置4 1，由於保持基板的 掛鈎4 7，以軸4 6爲中心經所定角度回轉，因而突出到 基板通過孔4 9且能收容到框體4 8側’但本發明的掛鈎 並不限於此，若能突出即可，例如水平移動掛鈎4 7而突 出且收容之構成亦可。 以下，說明本發明的其他實施形態。 第6圖中圖號6 3係爲表示本發明的其他實施形態之 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -26- — — — — — — — — — — — — 11 — 11 — I t — — — — — — — I- (請先閱讀背面之注意事項再填寫本頁) ' 530096 A7 --- B7 五、發明說明（24 ) 真空處理裝置。此真空處理裝置6 3具有真空槽6 1及運 送室7 〇。 真空槽6 1，如第6圖所示從上方直視形成爲五角形 ’具有5個壁面。其中的一壁面面向運送室7 〇 ,剩餘的 四壁面各設置1個窗口（未圖示）·，在各窗口，以反時鐘 的順序分別各裝置1個陰極68!、 682、 683、 684 。各陰極68ι、 682、 683、 684的表面被構成爲從 窗口面向真空槽61內。 在真空槽6 1內設置基板豎立裝置7 1及回轉台7 2 ’回轉台7 2被配置在真空槽6 1的底部。在回轉台7 2 的上方安裝基板豎立裝置71。 此基板豎立裝置7 1具有基板載置部8 0。此基板載 置部8 0係爲與過去裝置的基板載置部丨〇 4同樣的構成 ’密接保持基板，使其可以促成水平姿勢及7 〇。〜 90°範圍的豎立姿勢的其中一者。 回轉台7 2形成爲以鉛直方向的回轉軸7 3爲中心能 在水平面內回轉；基板豎立裝置71，回轉回轉台72 , 則與回轉台7 2同時回轉，基板載置部8 0可以面向水平 面內的所有方向。 利用上述的真空處理裝置6 3，在基板形成多層膜， 首先從運送室7 0，以運送機構（未圖示）將水平狀態的 基板（未圖示）運入到真空槽6 1內，而使其密接保持在 基板載置部8 0。 預先真空槽6 1內被真空排氣，在保持基板的狀態下 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-27 · 請 先 閱 讀 背 面 之 注 意 事 項 再 頁 經濟部智慧財產局員工消費合作社印制衣 530096 A7 B7 五、發明說明（25 ) ，朝陰極6 8 i方向使其豎立基板載置部8 0，而成爲豎立 基板的狀態，則與陰極6 8 :平行地對向配置基板表面。 (請先閱讀背面之注意事項再本頁) 在此狀態下所定的電壓施加到陰極6 8 ^。在陰極 6 8 !設置Μ 〇 (鉬）靶體物（未圖示）；施加電壓則濺射 Μ 〇靶體物，在豎立狀態的基板表面形成第1層的薄膜（ Mo)。所定膜厚的Mo薄膜形成在基板表面後，停止電 壓施加到陰極6 ，而使其中止濺射。 繼而，朝圖面反時鐘方向使其回轉回轉台7 2，而使 其回轉豎立狀態的基板載置部8 0。因此被保持在基板載 置部8 0之基板表面也可以使其面向水平面內的所有方向 ，所以朝圖面反時鐘方向回轉之基板載置部8 0，經一定 時間後平行地對向配置在陰極6 8 2。被對向配置後，停止 回轉台7 2的回轉，而使其靜止基板載置部8 0。 --線： 在此狀態下，所定的電壓施加到陰極6 8 2，則濺射陰 極6 8 2內的.T i靶體物，在豎立狀態的基板表面形成第2 層的薄膜（A1)。所定膜厚的A 1薄膜形成在基板表面 後，停止電壓施加到陰極6 8 2，而使其中止濺射。 經濟部智慧財產局員工消費合作社印制衣 其後，再度使其回轉回轉台7 2，而使其回轉基板載 置部8 0，在陰極6 83平行地使其對向配置基板表面，電 壓施加到陰極6 8 3而將陰極6 8 3的靶體物使其濺射到基 板表面，形成第3層的薄膜（Ti)，形成所定膜厚的 T 1薄膜後，停止陰極6 83的電壓施加，而使其中止濺射 0 繼而，再度使其回轉回轉台7 2而使其回轉基板載置 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -28- 530096 A7 _____ B7 五、發明說明（26 ) 部8 0 ’在陰極6 83平行地使其對向配置基板表面，電壓 施加到陰極6 84而將陰極6 8 4.的靶體物使其濺射到基板 表面’形成第4層的薄膜（I TO)，形成所定膜厚的 ITO(銦、錫氧化物）薄膜後，停止陰極684的電壓施 加而使其中止濺射。 經此4層的薄膜形成在基板表面後，基板豎立裝置 7 1將基板載置部8 0形成爲水平狀態。所被形成爲水平 狀態的基板，利用運送系（未圖示）從真空槽6 1取出而 被運送到運送室7 p，取出到裝置外。 如以上所說明過，本發明其他實施形態的真空處理裝 置63，具有回轉台；使其回轉回轉台72，則將垂直狀 態的基板載置部8 0，在水平面內可以面向所有的方向。 因而，在回轉台的周圍配置複數個陰極，而將基板表 面面向複數個陰極，可以平行地使其對向配置陰極及基板 表面，所以在1個真空槽6 1內，將複數種靶體物使其濺 射到1片基板而可以使其形成多層膜，且可以得到小型、 低成本且高產量之濺射裝置。 然而，在上述的真空處理裝置6 3，具有五角形的真 空槽6 1 ，在該內壁面的四面，配置合計4個的陰極6 8ι 〜6 8 4，但本發明並限於此，例如從上方正視在四角形真 空槽的三壁面各裝著1個陰極68!、 682、 683亦可 。第7〜9圖係爲說明該狀態之斜視圖。 在此情況，預先以運送臂7 8 7將基板8 0 a運入到 真空槽（未圖示）內，變更移動被配置在真空槽內之基板 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-29- -------------,¾ (請先閱讀背面之注意事項再填寫本頁) 訂---------線 « 經濟部智慧財產局員工消費合作社印製 530096 A7 ----- B7 五、發明說明（27 ) 裝置8 2 ’利用基板載置裝置8 2將基板8 0 a使其 到基板載置部8 0，基板8 0 a使其密接保持在基板 «g部8 0 °在此狀態下朝鉛直方向使其豎立基板載置部 8〇 ’則基板80a平行地對向配置在陰極68!(第7 ( a )圖）。 繼而’只以所定角度（10°〜20° )傾斜基板載 置部80 (第7 (b)圖），在水平面內使其90°回轉 S板載置部80 (第7 (c)圖），再度朝鉛直方向使其 豎立基板載置部80 (第8 (d)圖）。因此，基板 8 0 a平行地對向配置在陰極6 8ι。 其次’只以所定角度傾斜基板載置部8 0 (第8 ( e )圖）’在水平面內使其90°回轉基板載置部80 (第 8(f)圖）’再度朝鉛直方向使其豎立基板載置部80 (第9 (g)圖）。因此，基板80a平行地對向配置在 陰極6 8 3。 其後’只以所定角度傾斜基板載置部8 0 (第9 ( h )圖）’在水平面內使其90°回轉基板載置部80而將 基板載置部8 0形成爲水平狀態，則基板8 0 a形成爲水 平狀態（第9 ( i )圖）。其後，利用基板載置裝置8 2 使其上昇基板8 0 a，改移到運送臂8 7，運出到真空槽 外。 依據上述第7圖〜第9圖所示之真空處理裝置，在基 板8 0 a平行地對向配置在各陰極6 8 i〜6 8 3的狀態下 ，所定電壓施加到各陰極6 8 χ〜6 8 3，分別濺射各陰極 本紙張尺度適·用中國國家標準（CNS)A4規格（210 X 297公釐）-30 - 請 先 閱 讀 背 面 之 注 意 事 項 再 頁 經濟部智慧財產局員工消費合作社印製 530096 A7 _______ B7 五、發明說明（28 ) 6 81〜6 8 3內的靶體物，因而可以在1個真空槽內形成 3層膜。 (請先閱讀背面之注意事項再本頁) 進而，若爲使用多角形的真空槽而在其內壁面配置陰 極之構成即可；例如使用六角形的真空槽，而在其內壁面 的五角分別配置陰極亦可。此情況/可以在1個真空槽將 五層的積層膜形成在基板。 以下，說明本發明的其他實施形態。 第1 0 ( a )圖的圖號7 4係爲表示本發明其他實施 形態之真空處理裝置。此真空處理裝置7 4具有真空槽 75及運送室79。 真空槽7 5的一壁面面向運送室7 9 ;在未面向運送 室7 9之真空槽7 5的三壁面各自設置1個窗口 7 5 a、 75b、 75c。在各窗口75a、 75b、 75c的周 圍分別配置第1〜第3框體76〜76s ;在框體76〜 7 63分別安裝第1〜第3陰極78ι〜7 83 ;各陰極 7 8!〜7 83內的表面被構成爲分別介由窗口 7 5 a、 75b、 75c而面向真空槽75內。 經濟部智慧財產局員工消費合作社印製 在真空槽7 5設置未圖示的氣體導入口及排氣口；從 氣體導入口導入濺射氣體，利用真空泵（未圖示），可以 將真空槽7 5真空排氣。 進而，在真空槽7 5的內部底面設置基板豎立裝置 8 1。 基板豎立裝置81，如第10 (b)、10 (c)圖 所示，具有回轉台8 4及第1〜第4基板載置部8 2 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐）-31 - 530096 A7 B7 五、發明說明（29 ) 8 2 4。 回轉台8 4，被配置在真空槽7 5的內部底面，以鉛 直方向的回轉軸7 7爲中心能在水平面內回轉。 第1〜第4基板載置部8 2ι〜8 24，如第1 〇 ( c )圖所示，都形成爲水平狀態，被配置在回轉台8 4之上 使其從1依第1、第2、第3、第4基板載置部8 2i、 8 22、8 23、8 24的順序重疊。第1〜第4基板載置 部8 2 !〜8 24當中，被配置最下面之第4基板載置部 8 2 4被形成爲板狀；其他3片的基板載置部8 2 824被形成爲框體狀。 在第1〜第4基板載置部8 2 1〜8 2 4的側端分別安 裝第1〜第4驅動軸8 5ι〜8 54 ;只以所定角度回轉第 第1〜第4驅動軸8 5 !〜8 5 4，則以各自的中心軸線 7 6ι〜7 64爲中心使其豎立第1〜第4基板載置部 8 2ι〜8 24而形成爲在7 0。〜9 0。的範圍豎立的狀 態。 第1〜第4基板載置部8 2ι〜8 24相互間朝不同的 方向豎立’各基板載置部8 2 1〜8 24相互間面向不同的 方向。在最初的狀態，豎立第1〜第3基板載置部8 2 8 23，則分別面向第1〜第3陰極7 81〜7 83，豎立 第4基板載置部8 2，則面向運送室7 9。 然後，第1〜第4基板載置部8 2ι〜8 24，回轉回 轉台8 4，則與回轉台8 4同時回轉，可以面向水平面內 的所有方向。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-32- 請 先 閱 讀 背 面 之 注 意 事 項 再 頁 經濟部智慧財產局員工消費合作社印製 530096 A7 _ B7 五、發明說明（3〇 ) 針對使用具有上述過基板豎立裝置81的本實施形態 之真空處理裝置7 4，而在複數片基板形成3層膜，以下 進行說明。在此情況，預先將真空槽7 5內真空排氣，從 氣體導入口導入濺射氣體。在此狀態下，從運送室7 9 , 利用運送機構（未圖示），將水平狀態的第1片基板9 Oi 運入到真空槽7 5內，使其載置到第1基板載置部8 2 :上 ’第1基板載置部8 密接保持第1片的基板9 0:(第 1 1 ( a )圖）。 在此狀態下使其豎立第1基板載置部8 2 i，則第1片 的基板9 Οι表面介面窗口 7 5 a而與第1陰極7 8ι平行 地對向配置（第1 1 ( b )圖）。 其次，所定的電壓施加到第1陰極7 8:。在第1陰極 7 8 :設置Μ 〇 (鉬）靶體物，施加電壓則濺射Μ 〇靶體物 ，在第1片的基板90!表面形成第1層的薄膜（Mo)。 所定膜厚的Μ 〇薄膜形成在基板表面後，停止電壓施加到 第Γ陰極7而使其中止濺射。 繼而，從運送室79,利用運送機構（未圖示），將 水平狀態之第1片基板9 0 2運入到真空槽7 5內，而載置 到水平狀態的第2基板載置部8 2 :上。第2基板載置部 8 2 :密接保持所被載置之第2片基板9 0 2。 其次，以回轉軸7 7爲中心使其9 0 °回轉回轉台， 只90°使其回轉第1〜第4基板載置部8 2i〜8 24。 因此，被保持在第1基板載置部8 之第1片基板9 Oi 表面，介面窗口 7 5 b而平行地對向配置在第2陰極7 82 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 請 先 閱 讀 背 面 之 注 意 事 項 再 頁 經濟部智慧財產局員工消費合作社印製 -33- 530096 A7 B7 五、發明說明（S1 ) 。在此狀態下，使其豎立第2基板載置部8 22，則第2片 的基板9 〇2介由窗口7 5 a而平行地對向配置在第1陰極 第 11 (c)圖）。 在此狀態下，所定的電壓施加到第2陰極7 8 2。在第 2陰極782設置A1 (鋁）靶體物（未圖示），所定的電 壓施加到第2陰極7 8 2，則濺射A 1靶體物而在第1片的 基板9 Oi表面形成第2層的薄膜（A 1 )。 '所定的電壓施加到第2陰極7 82，並且所定的電壓施 加到第1陰極7 8 ^，則濺射第1陰極7 8 :內的Μ 〇靶體 物，在對向配置於第1陰極7 之第2片基板9 〇2的表 面形成第1層的薄膜（Mo)。此樣，同時將所定電壓施 加到各個第1、第2陰極78:、 782，因而可以同時成 膜在第1片的基板9 0:、第2片的基板9 〇2之兩者。 第二層的薄膜（A1)、第一層的薄膜（Mo)，分 別只所定膜厚形成在第1片的基板9 0:、第2片的基板 9〇2後，停止電壓施加到第1、第2陰極78:、782 而使其中止濺射。 繼而，從運送室7 9，利用運送機構（未圖示），將 水平狀態的第3片基板9 0 3運入到真空槽7 5內，而使其 載置到水平狀態之第3基板載置部8 2 3。第3基板載置部 8 2 3密接保持所被載置的第3片基板9 0 3。 其次，使其90°回轉回轉台72，只90°使其回 轉第1〜第4基板載置部8 2ι〜8 24。因此，被保持在 第1基板載置部8 之第1片基板9 0:的表面，介由窗 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-34 - 請 先 閱 讀 背 面 之 注 意 事 項 再 i 經濟部智慧財產局員工消費合作社印制取 530096 A7 B7 五、發明說明（32 ) (請先閱讀背面之注意事項再填寫本頁) 口 7 5 c而平行地對向配置在第3陰極7 83 ;被保持在第 2基板載置部8 22之第2片基板9 〇2的表面，平行地對 向配置在第2陰極7 82。在此狀態下，使其豎立第3基板 載置部8 23，則第3片的基板9 〇3平行地對向配置在第 1陰極78i(第11(d)圖）。 在此狀態下，所定的電壓施加到第3陰極7 8 3，則利 用反應性濺射，因而在第1片基板9 0:的表面形成第3層 的薄膜（T i N )。針對利用反應性濺射形成T i N膜之 詳情，於後述。 經此在第3陰極7 8 3施加所定電壓，並且分別將所定 電壓施加到第1、第2陰極7 8 :、7 8 2，則分別濺射第 1、第2陰極78:、782內的Mo靶體物、A 1靶體物 ，在被對向配置於第1陰極7 8!之第3片基板9 〇3的表 面形成第1層的薄膜（Mo )，在被對向配置於第2陰極 7 82之第2片基板9 〇2的表面形成第2層的薄膜（A 1 )。此樣，同時將所定的電壓施加到第1〜第3陰極78ι 〜7 82，因而可以同時使其成膜在第1片〜第3片基板 的全部表面。 經濟部智慧財產局員工消費合作社印製 第3層的薄膜（TiN)、第2層的薄膜（A1 )、 第1層的薄膜（Μ 〇 )，分別只以所定膜厚形成在第1片 、弟2片、弟3片之基板90ι、 9〇2、 9〇3後，停止 電壓施加到第1〜第3陰極而使其中止濺射。 繼而’將第1基板載置部8 2形成爲水平狀態，使其 將形成三層膜的第1片基板9 OiB成爲水平狀態，利用運 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱)-35 - " 530096 A7 B7 五、發明說明（33 ) 送機構（未圖示），從真空槽75將第1片基板9〇1運出 到運送室7 9 ，從運送室7 9，利用運送機構（未圖示） (請先閱讀背面之注意事項再@本頁) ，將水平狀態之第4片基板9 〇4運入到真空槽7 5內，而 使其密接保持在水平狀態之第1基板載置部8 2 :(第1 1 (e )圖）。 如以上所說明過，在第1 〇 ( a )圖所示的真空處理 裝置7 4 ’當在複數片的基板表面進行成膜處理之際，在 第1片基板9 0形成第1層的薄膜（Mo )後，將第2片 的基板9 0 !運入到真空槽內，在第1片基板9 0 !形成第 2層的薄膜（A 1 )則可以同時在第2片的基板9 〇2形成 第1層的薄膜（Mo):因每次各一層逐一形成薄膜將次 片基板運入到真空槽內，依順可以形成薄膜，所以能縮短 成膜所要的時間。 •綠· 不過，在於濺射裝置，新的靶體物設在陰極的情況， 不施行任何處理保持原樣進行濺射，則表會造成面狀態惡 化而放電不安定，在表面發生電弧放電，劣化了濺射結果 所成膜之膜質，產生脫落之問題。 經濟部智慧財產局員工消費合作社印創衣 第12圖係爲表示將具備靶體物之真空槽內部施於大 氣氣相後，再度從真空槽內形成爲真空狀態的時間點，被 供給到靶體物之積算電力與電弧放電發生次數的關係。依 據第1 2圖，若積算電力爲1 Kwh以下，則電弧放電的 發生次數形成爲1分間1 0 0次以上，頻繁地發生電弧放 電，但積算電力形成爲2 K w h以上，則降低到1分間2 次以下，若積算電力減小則電弧放電的發生次數增多’積 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ 36 - 530096. 丨 Line J Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 530096 A7 B7 V. Description of the Invention (13) However, in the present invention, at least one of the substrate mounting portions, for example, has a board shielding portion. It can face the target object / time 'because it can cover the window, so when the shielding part covers the window, if you shoot the target object, you can form a thin film on the shielding part, and you can do the front beach without using a simulated substrate. Shoot. Therefore, as in the past, since the time required for substrate replacement is not required, the pre-sputtering is performed in a shorter time than in the past. Furthermore, according to another vacuum processing apparatus of the present invention, when the substrate is in an upright state, when facing the processing means, for example, by using a sealing material provided in the substrate mounting portion or the inside of the vacuum tank, the frame can be processed. The space formed by the means and the substrate is formed in an airtight state. Therefore, when a plurality of substrates are processed by a plurality of processing methods, when a predetermined substrate is processed by one processing method, since a processing gas phase of the predetermined substrate can be separated from a processing gas phase of other substrates, the predetermined substrate, And other substrates can be processed separately. When a thin film is formed on the surface of a substrate by sputtering, a predetermined substrate may be reactively sputtered, and other substrates may be subjected to a normal sputtering process. Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 (a) is a cross-sectional view of an embodiment of the vacuum processing apparatus of the present invention when viewed directly from above; the vacuum tank 11 and the transport chamber 10 are provided. A substrate lifting mechanism (not shown) is provided in the vacuum tank 11. The paper size of the constructed paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -16-530096 A7-B7 V. Description of the invention, (14) A vacuum pump (not shown) can be used to evacuate the internal vacuum. (Please read the precautions on the back side before ^ N4 · Ι) Set two windows (not shown) on the two walls opposite to the vacuum tank 1 1; each window is equipped with a cathode 8 :, 8 2 0 Each cathode 8 ^, 82 is configured to face the inside of the vacuum tank 11 from the window. As shown in Figs. 1 (b) and 1 (c), the substrate erecting device 31 has a plate-shaped substrate mounting portion 3 2 and a wrist portion 3 3, a rotating member 3 4, and a drive shaft 35. One side of the substrate mounting portion 32 is formed as a mounting surface 37. After the substrate is mounted on the mounting surface, it can be held by a holding mechanism (not shown). This substrate mounting portion 3 2 is usually horizontal (in this state, hereinafter referred to as a horizontal posture): in this state, the mounting surface 37 faces upward. One end of the revolving member 34 is mounted on the side surface of the substrate mounting portion 32; the revolving member 34 can revolve at a predetermined angle with the center axis 21 as the center. One end of the wrist portion 33 is attached to the other end of the turning member 34, and one end of the drive shaft 35 is attached to the other end of the wrist member 33, and the drive shaft 35 can be rotated around the center line 22 of the predetermined angle. The other end of the drive shaft 35 is attached to the motor 36. The motor 36 is rotated (hereinafter, "swivel" also includes rotation with a rotation angle of less than 360 °), and the drive shaft 35 can be rotated. The Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed a power transmission mechanism (not shown) and a power switching mechanism (not shown) equipped with a belt, etc. inside the wrist 3, and uses the power switching mechanism to drive the shaft 35 The turning force can also be transmitted to the wrist 3 3 and the turning member 3 4 °. When the turning force of the drive shaft 35 is transmitted to the wrist 33, the turning mechanism 34 is formed by the power to change the mechanism, and the substrate is placed. Part 3 2 is fixed The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) · 17-530096 A7 __ B7 V. Description of the invention (15) (Please read the precautions on the back before @ this page ), The rotating wrist part 3 3 is erected after the substrate mounting part 3 2 and the wrist part 3 3 are integrated; when the rotating force of the driving shaft 35 is transmitted to the rotating member 34, it is switched by power. The mechanism releases the fixed state of the rotating member 34 and the substrate mounting portion 32, and transmits the turning force of the driving shaft 35 to the rotating member by the power transmission mechanism. When the driving shaft 35 is rotated, the wrist portion 3 3 remains horizontal as it is. Only the substrate mounting portion 3 2 is erected. With such a substrate erecting device 31, the substrate mounting portion 32 and the wrist portion 33 are in a horizontal posture, and the driving motor 36 is rotated around the central axis 22 as the driving shaft 35. The operating power switching mechanism transmits the turning force of the drive shaft 35 to the wrist portion 33, and the substrate mounting portion 32 and the wrist portion 3 are integrated and stand upright. The motor 36 stops the driving shaft 35 after turning a predetermined angle; when the driving shaft 35 is stopped, as shown in FIG. 1 (d), it can be erected in a range of 70 ° to 90 ° (the first erected Posture) make the stationary substrate mounting portion 3 2 stand still. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, after the substrate mounting portion 32 is in a horizontal posture, the operation of the power switching mechanism is switched to drive the motor 36 to rotate the driving shaft 35, and the driving shaft 35 The turning force is transmitted to the turning member 3 4 through the power transmission mechanism, and the turning member 3 4 is rotated about the central axis 21 as the center, and the wrist portion 3 3 is kept horizontal as it is, and only the substrate mounting portion 32 is erected. The motor 36 stops the drive shaft 35 after turning a predetermined angle; when the drive shaft 35 is stopped, as shown in FIG. 1 (e), it can be erected in a range of 70 ° to 90 ° (second Stand up) to make the stationary substrate mounting portion 3 2 stand still. The first erected posture in the above-mentioned substrate erection device 31 (the first (this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -18-530096 A7 B7 V. Description of the invention (16) d ) ®) and the second upright posture (Fig. 1 (e)) are formed so that the substrate mounting portion 32 is at 70 ° to 90 °. The first posture is to erect the substrate mounting portion 3 2 with the drive shaft 3 $ as the center, and the second posture is to erect the rotating member 34 as the center. Therefore, the first and second postures, The substrate mounting portions 32 are erected in opposite directions from each other. The mounting surfaces 37 also face each other in opposite directions. In the vacuum processing apparatus of this embodiment having such a substrate erecting device 31, the substrate mounting portion 32 is arranged in the vacuum tank 11 so that the first acoustic standing posture thereof is parallel to the mounting surface 37 facing one side. The cathode 8 i (Figure 1 (d)), and the second upright posture is such that the mounting surface 37 faces the other cathode 82 in parallel (Figure 1 1 (e)). In this vacuum processing apparatus 3, a thin film is formed on a substrate by a sputtering method. First, a substrate in a horizontal state is transferred from a transfer chamber 10 to a vacuum chamber 11 by a transfer system (not shown), and placed thereon. The mounting surface 37 of the substrate mounting portion 32 in the horizontal posture is closely held on the surface of the mounting surface 37 by a holding mechanism (not shown). Then, the board | substrate mounting part 32 is raised by rotating the drive shaft 35, and it is set as a 1st standing posture (FIG. 1 (d)). As described above, in the first standing posture, the placing surface 37 is arranged in parallel to the cathode 81 on one side, and the substrate surface is arranged flat on the cathode 8i. In this state, a predetermined voltage is applied to one cathode 8 !. One cathode 8! Is provided with an A 1 (aluminum) target (not shown): This A 1 target is sputtered onto the substrate surface to form a first layer of thin film on the substrate surface (A 1 applicable to this paper size) China National Standard (CNS) A4 Specification (210x297mm) -19-(Please read the precautions on the back before this page) Order --- Line: Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 530096 A7 — B7 V. Description of the invention (17) After the A 1 thin film having a predetermined film thickness is formed on the substrate surface, the voltage is stopped from being applied to one of the cathodes 8 i and the sputtering is stopped. Thereafter, the drive motor 36 rotates the drive shaft 3 5 at a predetermined angle, Then, the substrate mounting portion 32 is lowered to return to the horizontal posture. After returning to the horizontal posture, the motor 36 is driven to rotate the rotating member 34 at a predetermined angle, and the substrate mounting portion 32 is set to the second upright posture (the 1 (e)). As described above, since the second erection posture is that the placement surface 37 is arranged opposite to the cathode 82 in parallel, the substrate surface is arranged in parallel to the cathode 82. In this state, a voltage is applied to the other side. Cathode 8 2, then Ti ( ) Target object (not shown); due to the sputtering target object, a second layer of film (Ding 1) is formed on the surface of the substrate in the erect state. Then, the motor 36 is driven to make it only at a predetermined angle After turning the rotary member 34 and the substrate mounting portion 32 back to the horizontal position, the substrate is transported out of the vacuum chamber 11 to the transport chamber 10 by a transport system (not shown) and taken out of the apparatus. As explained above However, in the vacuum processing apparatus 3 of the present invention, there is a substrate standing device 31. The substrate surface can be arranged in parallel to the cathodes 8 i and 8 2 in the first and second standing postures, respectively. Therefore, the substrate mounting section 3 2 forms the first upright posture, and the A 1 target placed on one of the cathodes 8: is sputtered onto the surface of the substrate to form an A 1 film, and then in the same vacuum chamber 1 1, the substrate mounting portion 3 2 forms the first 2 Stand up and sputter the other cathode 8 2 onto the substrate surface to form a τ i film on the substrate surface; the Chinese National Standard (CNS) A4 specification (210 X 297 mm) applies to this paper size -20-(Please (Read the notes on the back before # this page)-> 0. • Line: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 530096 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy The layer film is formed on the surface of the substrate. Therefore, in the case of the formed film, since two film forming chambers are not required in the past, the occupied portion can reduce the space occupied by the film forming chamber. However, in the above-mentioned substrate erection device 31, a force transmission mechanism and a power switching mechanism such as a belt are provided inside the wrist portion 33, but the present invention is not limited thereto, and the turning force of the driving shaft 35 can be transmitted to the wrist portion. Either 3 3 or the revolving member 3 4; if it has the first standing position and the second. The erection mechanism is sufficient. In addition, a plate-shaped substrate mounting portion 32 is used, but the present invention is not limited to this. For example, a frame-shaped substrate mounting portion may be used. Hereinafter, other embodiments of the present invention will be described. Fig. 2 (a) of Fig. 2 is a vacuum processing apparatus showing another embodiment of the present invention. This vacuum processing apparatus 33 includes a vacuum tank 30 and a transfer chamber 40. One wall surface of the vacuum tank 30 faces the transport chamber 40. One window (not shown) is provided on each of the three wall surfaces of the vacuum tank 30 that does not face the transport chamber 40. Each window is provided with a third to third cathodes. 38: -383. The surface inside each cathode 3 8 1 to 3 8 3 is configured to face the inside of the vacuum tank 30 from the window. In the vacuum tank 30, a substrate erecting device 41 is provided; it is configured to evacuate the inside of the vacuum tank 30 by a vacuum pump (not shown). As shown in Figs. 1 (b) and 1 (c), the substrate erecting device 41 'includes first to third substrate mounting portions 42 ^ to 423 and a rotating shaft 45m (please read the precautions on the back before this page) Taxi line: This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 21 530096 A7 B7 V. Description of the invention (19) ~ 4 53. (Please read the precautions on the back first, then this page.) The first to third substrate mounting sections 42: to 423, as shown in Figure 2 (c), are in a horizontal state. The order of the second and third substrate mounting portions 42l, 422, and 423 overlaps. The first to third drive shafts 45i to 453 are mounted on the sides of the first to third substrate mounting portions 4 2: to 4 23; the first to third drive shafts 4 5! To 4 5 are only rotated at a predetermined angle. Then, take the respective central axis 5 3! ~ 5 33 as the center to make it stand up to the 1st ~ 3rd base. The board mounting portions 4 to 423 are formed to stand in a range of 70 ° to 90 °. The first to third substrate mounting portions 4 2 4 2 3 are erected in different directions from each other; each substrate The mounting portions 4 2: to 4 2 3 face different directions from each other. Here, when each of the substrate placing portions 4 4 23 is in an upright state, they are respectively made to face the first, second, and third cathodes in parallel; line-3 8 1. Each of the substrate mounting portions 42 at 382 and 383 ° is formed by a frame body 4 8 having a substrate passage hole 4 9 larger than the substrate in the center, as shown in FIGS. 3 (a) and 3 (b); The substrate can be printed through the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in the up and down direction of the substrate through hole 49. On the back of this frame body 4 8 are provided four hooks 4 7: ~ 4 7 4 protruding to the substrate through hole 4 9; each hook 4 7 ^ ~ 4 7 4 is centered on the shaft 4 6! ~ 4 6 4 After rotating at a predetermined angle, it protrudes to the substrate through hole 4 9; when it has protruded, the substrate can be placed on the hooks 4 7! ~ 4 7 4. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) · 22-530096 A7 __ B7 V. Description of the invention (20) The vacuum processing device of this embodiment having the above-mentioned substrate erecting device 41 is used 33. In the case of forming a thin film, the substrate in a horizontal state is transported into the vacuum tank 30 from the transport chamber 40 in advance using a fork of a transport robot, and is kept still above the substrate erection device 41. At this time, the first to third substrate mounting portions 42i to 423 of the substrate standing device 41 are formed in a horizontal state in advance; the substrate is arranged above the first substrate mounting portion 421 in a horizontal state. A substrate elevating mechanism 4 4 is disposed below the substrate erecting device 41; the substrate elevating mechanism 4 4 includes a plurality of substrate elevating pins 5 1 and 5 12 which can be moved up and down. When the lifting pins 5 11 and 5 12 are moved to the upper side, the substrate passing holes 4 9 passing through the substrate placing portions 4 2i to 4 23 may be positioned above the first substrate placing portion 4 2 ^. . When the substrate 50 is positioned on the first substrate mounting portion 4 2: and the lifting pins 5 1:, 5 1 2 are moved upward, the substrate is mounted on the lifting pins 5 1!, 5 1 2 Apex. With the hook 4 7 protruding from the first substrate mounting portion 4 2 i, the extension fork is pulled out between the substrate 50 and the first substrate mounting portion 4 2: and returned to the transport chamber 10. When the lift pins 5 1 τ and 5 1 2 are moved downward, the substrate is mounted on the hook 4 7 and moved from the extension fork to the first substrate mounting portion 4 2 i (Fig. 4 (a), Fig. 4 (b) Figure). In this state, the substrate is tightly held on the first substrate mounting portion 4 2 i by a holding mechanism (not shown), and the first driving shaft 4 5 1 is rotated at a predetermined angle, and the first substrate mounting portion 4 is rotated. 2 i is formed in an upright state, and the surface of the substrate 50 is arranged in parallel to the first cathode 38 :. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) _ 23-(Please read the precautions on the back and then 9 pages)-^ 1 ·-, Line _ Employee Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative 530096 A7 B7 V. Description of the invention (21) (Please read the notes on the back before this page) Set the Mo (molybdenum) target (not shown) on the first cathode 3 82; In the state where the substrate surface and the first cathode 3 8 are disposed, when a voltage is applied to the first cathode 3 8 :, the Mo target is sputtered, and the thin film (Mo) of FIG. 1 is formed on the substrate surface in a standing state. . Next, the first driving shaft 4 5 1 is rotated to return the first substrate mounting portion 4 2! To a horizontal state (Fig. 4 (a), Fig. 4 (b)). Then, the lifting pins are raised. 5 1 i, 5 1 2 are moved to the top, and the tip is brought into contact with the back surface of the substrate 50 (Fig. 4 (c)). In this state, if the hooks 4 7 τ, 4 7 2 of the first substrate mounting portion 4 2! On which the substrate 50 is placed so far are accommodated, the substrate 50 can be freely moved up and down through the substrate through hole 4 9. To move. --Line- At this time, make it protrude from the hooks 571 and 572 of the lower 2nd board | substrate mounting part 4 2 2 and lower the lift pins 511 and 512 (4 (figure) figure). Therefore, the substrate 50 is placed on the hooks 57! And 572 of the second placing portion 422 (Fig. 5 (a)). This is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The substrate 50 is changed from the first substrate mounting portion 4 2 τ to the second substrate mounting portion 4 22 and lowered and the lifting pins 5 1 i, 5 1 2 and after being accommodated in the substrate holding mechanism 4 4, the first substrate mounting portion 4 2 1 becomes cum again (Figure 5 (b)), and then the second driving shaft 4 52 is rotated at a predetermined angle. The second substrate mounting portion 4 2 2 can be erected, and the surface of the substrate 50 held can be arranged in parallel to the second cathode 3 8 2. A 1 (aluminum) target (not shown) is provided on the second cathode 3 82; This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -24-530096 A7 B7 V. Invention Explanation (22) In a state where the surface of the substrate 50 is disposed opposite to the second cathode 3 82, and a predetermined voltage is applied to the second cathode, the A 1 target is sputtered to the surface of the substrate 50, and A second thin film (A1) is formed on the surface. Then, the second driving shaft 4 52 is rotated at a predetermined angle to return the second substrate mounting portion 4 2 2 to a horizontal state, and the pins 5 1 i and 5 1 2 are raised in the same manner as described above. The tip thereof abuts on the back surface of the substrate 50, and receives the hooks 57 :, 572 of the second substrate mounting portion 422. The hooks 57: and 572 are formed so that the substrate can be moved up and down through the substrate passage hole 49 to lower the lifting pin 5. 1 X, 5 12 to mount the substrate on the hooks 6 7 1, 6 72 of the third substrate mounting portion 4 23. Thereafter, the second substrate mounting portion 4 2 2 was erected again to be erected, and the third substrate mounting portion 4 2 3 was erected. From this state, the third driving shaft 4 5 3 can be rotated at an angle, and the third substrate mounting portion 4 23 is erected; the held substrate 50 is formed in an upright state, and the substrate surface can be faced in parallel. A Ti (titanium) target is disposed on the third cathode 3 8 2 0, and a third cathode 3 83 is provided. When a predetermined voltage is applied to the third cathode 3 8 3, the Ti target is sputtered on the surface of the substrate 50. A thin film (Ti) of a third layer is formed on the surface of the substrate 50. After that, three layers of thin films are formed on the surface of the substrate 50, and the third driving rotation 4 53 is rotated again at a predetermined angle, and the third substrate placing portion 4 23 is returned to a horizontal state, and the pins 5 1 i are lifted. , 5 1 2 moves to the top. Therefore, the substrate 50 is mounted on the tips of the lift pins 51 ^, 512 and rises. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -25-(Please read the precautions on the back before --- page)-Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Clothing 530096 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (23) The substrate 50 is raised to a predetermined height, and the extension fork is extended into the vacuum tank 31 again so that it is located on the substrate 5 〇 Below. In this state, the lifting pins 5 1 i, 5 1 2 are moved downward, and the substrate 50 is placed on the extension fork in a horizontal state. After the substrate 50 is placed on the fork, the fork is moved from the vacuum tank 31 to the transfer chamber 40, and the substrate is carried out to the transfer chamber 40 and taken out of the apparatus. As described above, the 'vacuum processing apparatus 3 3' in other embodiments of the present invention has a substrate erecting device 41 to make the substrate 50 stand, and the surface of the substrate 50 can be faced in three different directions. A total of three kinds of targets of the cathodes 3 8 3 8 3 arranged in three directions can be sequentially sputtered on the surface of the substrate 50 in a vacuum chamber 30 to form a three-layer film. In this way, in a vacuum chamber 30, three layers of film can be laminated on the surface of the substrate 50, so in the case of forming a three-layer film, it is not necessary to use the three vacuum chambers as in the past. Partially reduces the space occupied by the vacuum tank. Furthermore, since the time required to move the substrate between the vacuum chambers is not required, the throughput can be increased. However, in the above-mentioned substrate erecting device 41, since the hook 47 holding the substrate rotates around the shaft 46 at a predetermined angle, it protrudes to the substrate through hole 4 9 and can be accommodated on the frame body 4 8 side. The hook of the invention is not limited to this, as long as it can protrude, for example, a structure in which the hook 47 can be moved horizontally to protrude and accommodate can be used. Hereinafter, other embodiments of the present invention will be described. Fig. 6 in Fig. 6 indicates that the paper size of other embodiments of the present invention is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -26- — — — — — — — — — — — — 11 — 11 — I t — — — — — — — I- (Please read the notes on the back before filling this page) '530096 A7 --- B7 V. Description of the invention (24) Vacuum processing device. This vacuum processing apparatus 63 has a vacuum tank 61 and a transfer chamber 70. The vacuum tank 61 is formed in a pentagonal shape when viewed directly from above as shown in Fig. 6 and has five wall surfaces. One of the walls faces the transport room 70, and one window (not shown) is provided for each of the remaining four walls. Each window is provided with a cathode 68 !, 682, 683, and 684 in the counterclockwise order. The surfaces of the cathodes 68m, 682, 683, and 684 are formed so as to face the inside of the vacuum tank 61 from the window. A substrate erection device 71 and a turntable 7 2 ′ are provided in the vacuum tank 61, and the turntable 7 2 is arranged at the bottom of the vacuum tank 61. A substrate erecting device 71 is mounted above the turntable 7 2. This substrate erection device 71 includes a substrate mounting portion 80. This substrate mounting portion 80 has the same structure as the substrate mounting portion of the conventional device. The substrate is tightly held so that the substrate can be brought into a horizontal posture and 70 °. One of the upright positions in the range of ~ 90 °. The turntable 7 2 is formed so as to be able to rotate in a horizontal plane around the rotation axis 73 in the vertical direction; the substrate erection device 71 and the turntable 72 are rotated at the same time as the turntable 7 2, and the substrate mounting portion 80 can face All directions in the horizontal plane. In the vacuum processing apparatus 63 described above, a multilayer film is formed on a substrate. First, a substrate (not shown) in a horizontal state is transferred into the vacuum tank 61 by a transfer mechanism (not shown) from a transfer chamber 70, and This is held in close contact with the substrate mounting portion 80. The pre-vacuum tank 61 is evacuated by vacuum. The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) -27 while holding the substrate. -27 · Please read the precautions on the back before the Ministry of Economy Intellectual Property Bureau employee clothing cooperative printed clothes 530096 A7 B7 5. Description of the invention (25), the substrate mounting portion 80 is erected in the direction of the cathode 6 8 i, and the state of the erected substrate is parallel to the cathode 6 8: Place the substrate surface opposite to the ground. (Please read the precautions on the back before this page) The voltage set in this state is applied to the cathode 6 8 ^. A cathode (molybdenum) target (not shown) is provided on the cathode 68; the target is sputtered by applying a voltage, and a first-layer film (Mo) is formed on the surface of the substrate in an upright state. After a Mo thin film having a predetermined thickness is formed on the substrate surface, the application of voltage to the cathode 6 is stopped, and the sputtering is stopped. Then, the turntable 72 is rotated in the counterclockwise direction of the drawing, and the substrate mounting portion 80 in the upright state is rotated. Therefore, the substrate surface held on the substrate mounting portion 80 can also face in all directions in the horizontal plane. Therefore, the substrate mounting portion 80 rotated in the counterclockwise direction of the drawing surface is arranged in parallel to each other after a certain period of time. Cathode 6 8 2. After being arranged facing each other, the rotation of the turntable 72 is stopped, and the stationary substrate mounting portion 80 is made to stand still. -Line: In this state, a predetermined voltage is applied to the cathode 6 8 2 and the sputtering cathode 6 8 2 is sputtered. The T i target has a thin film (A1) of the second layer formed on the surface of the substrate in a standing state. After the A 1 thin film having a predetermined film thickness is formed on the surface of the substrate, the application of a voltage to the cathode 6 8 2 is stopped, and the sputtering is stopped. After the clothing was printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, it was rotated to turn the turntable 72 again, and the substrate mounting part 80 was rotated, and the substrate surface was arranged opposite to the cathode 6 83 in parallel. The cathode 6 8 3 is applied and the target of the cathode 6 8 3 is sputtered on the surface of the substrate to form a thin film (Ti) of the third layer. After the T 1 thin film having a predetermined thickness is formed, the voltage of the cathode 6 83 is stopped. Apply, and stop sputtering 0, and then turn the rotary table 7 2 again to place the rotary substrate on this paper. This paper applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) -28- 530096 A7 _____ B7 V. Description of the invention (26) The part 8 0 'is arranged on the surface of the cathode 6 83 parallel to the surface of the substrate, and a voltage is applied to the cathode 6 84 and the cathode 6 8 4. The target is sputtered on the surface of the substrate to form a thin film (I TO) of the fourth layer. After forming an ITO (indium, tin oxide) film with a predetermined thickness, the voltage application of the cathode 684 is stopped to stop the sputtering. Shoot. After the four layers of thin films are formed on the surface of the substrate, the substrate erecting device 71 forms the substrate placing portion 80 in a horizontal state. The substrate formed in the horizontal state is taken out of the vacuum tank 61 by a conveyance system (not shown), and is conveyed to the conveyance chamber 7p, and taken out of the apparatus. As described above, the vacuum processing device 63 according to another embodiment of the present invention has a turntable; and when the turntable 72 is rotated, the substrate mounting portion 80 in a vertical state can face in all directions in a horizontal plane. Therefore, by placing a plurality of cathodes around the turntable and facing the substrate surface to the plurality of cathodes, the cathode and the substrate surface can be arranged in parallel facing each other. Therefore, a plurality of target objects are placed in one vacuum tank 61. By sputtering this onto a single substrate, a multilayer film can be formed, and a small-sized, low-cost, and high-yield sputtering device can be obtained. However, the vacuum processing device 63 described above has a pentagonal vacuum tank 6 1 and a total of 4 cathodes 6 8 ι to 6 8 4 are arranged on the four sides of the inner wall surface. However, the present invention is not limited to this. The three walls of the apparently rectangular vacuum tank are each equipped with one cathode 68 !, 682, 683. Figures 7 to 9 are perspective views illustrating this state. In this case, the substrate 80a is transported into the vacuum tank (not shown) by the conveying arm 7 8 7 in advance, and the substrate placed in the vacuum tank is changed and moved. The paper size applies the Chinese National Standard (CNS) A4 standard. (210 X 297 mm) -29- -------------, ¾ (Please read the notes on the back before filling out this page) Order --------- line « Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 530096 A7 ----- B7 V. Description of the invention (27) Device 8 2 'Using the substrate mounting device 8 2 Place the substrate 8 0 a to the substrate mounting portion 8 0 If the substrate 80a is held in close contact with the substrate «g portion 80 °, in this state, the substrate placing portion 80 'is erected in a vertical direction, and the substrate 80a is arranged parallel to the cathode 68! (No. 7 ( a) Figure). Then 'tilt the substrate mounting portion 80 only at a predetermined angle (10 ° to 20 °) (Fig. 7 (b)), and turn the S-plate mounting portion 80 by 90 ° in the horizontal plane (Fig. 7 (c)) , And erected the substrate mounting portion 80 again in the vertical direction (Fig. 8 (d)). Therefore, the substrate 80 a is arranged in parallel to the cathode 68. Next, 'tilt the substrate mounting portion 80 only at a predetermined angle (FIG. 8 (e))' and turn the substrate mounting portion 80 by 90 ° in the horizontal plane (FIG. 8 (f)) 'again in the vertical direction. The substrate mounting portion 80 is erected (Fig. 9 (g)). Therefore, the substrate 80a is arranged in parallel to the cathode 6 8 3. Thereafter, 'the substrate mounting portion 80 is tilted only at a predetermined angle (FIG. 9 (h))' and the substrate mounting portion 80 is rotated 90 ° in the horizontal plane to form the substrate mounting portion 80 in a horizontal state. The substrate 80a is formed in a horizontal state (FIG. 9 (i)). Thereafter, the substrate 80 a is lifted by the substrate mounting device 8 2, moved to the transfer arm 87, and carried out of the vacuum chamber. According to the vacuum processing apparatus shown in Figs. 7 to 9 above, a predetermined voltage is applied to each cathode 6 8 χ ~ in a state where the substrate 80 a is arranged in parallel to each cathode 6 8 i to 6 8 3 in parallel. 6 8 3. Separate sputtering of each cathode. This paper is suitable for use. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -30-Please read the precautions on the back before page Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Print 530096 A7 _______ B7 V. Description of the invention (28) 6 81 ~ 6 8 The target object in 3, so 3 layers of film can be formed in 1 vacuum tank. (Please read the precautions on the back page before this page.) Furthermore, if you use a polygonal vacuum tank, you can arrange the cathode on the inner wall surface; for example, use a hexagonal vacuum tank, and separate the five corners of the inner wall surface. It is also possible to arrange the cathode. In this case, a five-layer laminated film can be formed on the substrate in one vacuum chamber. Hereinafter, other embodiments of the present invention will be described. Reference numeral 74 of Fig. 10 (a) is a vacuum processing apparatus showing another embodiment of the present invention. This vacuum processing apparatus 74 includes a vacuum tank 75 and a transfer chamber 79. One wall surface of the vacuum tank 75 faces the transport chamber 7 9; one window 7 5 a, 75b, 75c is provided on each of the three wall surfaces of the vacuum tank 75 which does not face the transport chamber 7 9. The first to third frames 76 to 76s are arranged around the windows 75a, 75b, and 75c, respectively; the first to third cathodes 78 to 7 83 are installed to the frames 76 to 7 63; each of the cathodes 7 8! To 7 The surface inside 83 is configured to face the inside of the vacuum tank 75 through the windows 75a, 75b, and 75c, respectively. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, a vacuum tank 7 5 is provided with a gas inlet and an exhaust port (not shown); a sputtering gas is introduced from the gas inlet, and a vacuum pump (not shown) can be used to vacuum the tank 5Vacuum exhaust. Further, a substrate erecting device 81 is provided on the inner bottom surface of the vacuum chamber 75. The substrate erecting device 81, as shown in Figs. 10 (b) and 10 (c), has a turntable 8 4 and first to fourth substrate mounting portions 8 2 This paper is in accordance with China National Standard (CNS) A4 specifications ( 210x297 mm) -31-530096 A7 B7 V. Description of the invention (29) 8 2 4 The turntable 84 is arranged on the inner bottom surface of the vacuum tank 75, and is capable of turning in a horizontal plane around a rotation axis 77 in the vertical direction. The first to fourth substrate mounting portions 8 2 to 8 24 are formed in a horizontal state as shown in FIG. 10 (c), and are arranged on the turntable 8 4 so that they are aligned in order from 1 to 1. 2. The order of the 3rd and 4th board | substrate mounting parts 8 2i, 8 22, 8 23, and 8 24 overlaps. Among the first to fourth substrate mounting portions 8 2! To 8 24, the fourth substrate mounting portion 8 2 4 arranged at the bottom is formed in a plate shape; the other three substrate mounting portions 8 2 824 are formed. It is frame-like. Attach the first to fourth drive shafts 8 5 to 8 54 to the side ends of the first to fourth substrate mounting portions 8 2 1 to 8 2 4 respectively; and rotate the first to fourth drive shafts 8 5 at a predetermined angle only. ! ~ 8 5 4 and the first to fourth substrate mounting portions 8 2 to 8 24 are erected around 7 0 to 7 64 with their respective central axes as the center. ~ 9 0. The range is upright. The first to fourth substrate mounting portions 8 2 to 8 24 are erected in different directions from each other 'and each of the substrate mounting portions 8 2 1 to 8 24 faces different directions from each other. In the initial state, the first to third substrate mounting portions 8 2 8 23 are erected to face the first to third cathodes 7 81 to 7 83, and the fourth substrate mounting portion 8 2 is erected to face the transport room 7 9. Then, the first to fourth substrate mounting portions 8 2 to 8 24 and the rotary table 8 4 are rotated at the same time as the rotary table 8 4 and can face in all directions in the horizontal plane. This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -32- Please read the precautions on the back before printing on page 530096 A7 _ B7 printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs 3) A three-layer film is formed on a plurality of substrates by using the vacuum processing apparatus 74 of the present embodiment having the above-mentioned substrate erecting device 81, which will be described below. In this case, the inside of the vacuum tank 75 is evacuated in advance, and the sputtering gas is introduced from the gas introduction port. In this state, the first substrate 9 Oi in a horizontal state is carried into the vacuum chamber 75 from the transfer chamber 7 9 by a transfer mechanism (not shown), and is placed on the first substrate mounting portion. 8 2: Upper 1st substrate mounting portion 8 closely holds the first substrate 9 0: (Figure 1 (a)). In this state, if the first substrate mounting portion 8 2 i is erected, the first substrate 9 0 m surface interface window 7 5 a is arranged in parallel to the first cathode 7 8 i (the first 1 (b) Figure). Next, a predetermined voltage is applied to the first cathode 7 8 :. The first cathode 78 is provided with a mo (molybdenum) target, and the mo target is sputtered by applying a voltage, and a thin film (Mo) of a first layer is formed on the surface of the first substrate 90 !. After the Mo thin film having a predetermined film thickness is formed on the substrate surface, the application of a voltage to the? -Th cathode 7 is stopped to stop the sputtering. Then, the first substrate 902 in the horizontal state is transported into the vacuum chamber 75 by the transport chamber 79 using a transport mechanism (not shown), and is placed on the second substrate mounting portion 8 in the horizontal state. 2: On. Second substrate mounting portion 8 2: The second substrate 902 placed on the second substrate is tightly held. Next, the rotary table is rotated 90 ° around the rotary shaft 7 7, and the first to fourth substrate mounting portions 8 2i to 8 24 are rotated only 90 °. Therefore, the surface of the first substrate 9 Oi held on the first substrate mounting portion 8 and the interface window 7 5 b are arranged in parallel to the second cathode 7 82. This paper is in accordance with China National Standard (CNS) A4. (210 X 297 public love) Please read the precautions on the back before printing the page printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-33- 530096 A7 B7 V. Description of Invention (S1). In this state, the second substrate mounting portion 8 22 is erected, and the second substrate 9 0 2 is arranged in parallel to the first cathode via the window 7 5 a (Fig. 11 (c)). In this state, a predetermined voltage is applied to the second cathode 7 8 2. An A1 (aluminum) target (not shown) is provided on the second cathode 782, and a predetermined voltage is applied to the second cathode 7 8 2 so that the A 1 target is sputtered and formed on the surface of the first substrate 9 Oi The second layer of film (A 1). 'If a predetermined voltage is applied to the second cathode 7 82 and a predetermined voltage is applied to the first cathode 7 8 ^, the target object in the first cathode 7 8: is sputtered, and the target is disposed opposite to the first cathode. The surface of the second substrate 9 of 7 is a thin film (Mo) of the first layer. In this way, a predetermined voltage is applied to each of the first and second cathodes 78 :, 782 at the same time, so that both the first substrate 90: and the second substrate 902 can be formed simultaneously. After the second layer of the film (A1) and the first layer of the film (Mo) are formed with predetermined film thicknesses on the first substrate 90: 2 and the second substrate 900, respectively, the application of voltage is stopped And second cathodes 78 :, 782 to stop sputtering. Next, the third substrate 903 in a horizontal state is transported into the vacuum chamber 75 from the transport chamber 79 by a transport mechanism (not shown), and it is placed on the third substrate on the horizontal state. Placing section 8 2 3. The third substrate mounting portion 8 2 3 closely holds the third substrate 903 placed thereon. Next, the rotary table 72 is rotated 90 °, and the first to fourth substrate mounting portions 8 2 to 8 24 are rotated only 90 °. Therefore, the surface of the first substrate 9 0: held on the first substrate mounting portion 8 is compliant with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) through the window paper size -34-Please first Read the precautions on the back and then print them from the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 530096 A7 B7 V. Description of the invention (32) (Please read the precautions on the back before filling out this page.) The second cathode 7 82 is arranged on the third cathode 7 83; the surface of the second substrate 9 02 held on the second substrate mounting portion 8 22 is arranged parallel to the second cathode 7 82. In this state, the third substrate mounting portion 8 23 is erected, and the third substrate 903 is arranged in parallel to the first cathode 78i (FIG. 11 (d)). In this state, when a predetermined voltage is applied to the third cathode 7 8 3, reactive sputtering is used to form a third layer thin film (T i N) on the surface of the first substrate 9 0 :. The details of forming the T i N film by reactive sputtering will be described later. After applying a predetermined voltage to the third cathode 7 8 3 and applying the predetermined voltage to the first and second cathodes 7 8:, 7 8 2 respectively, the first and second cathodes 78 :, 782 are sputtered, respectively. The Mo target object and the A 1 target object form a first-layer thin film (Mo) on the surface of the third substrate 9 03 which is disposed opposite to the first cathode 7 8 !, and is disposed opposite to the first substrate 7 0 !. The surface of the second substrate 9 02 of the second cathode 7 82 forms a thin film (A 1) of the second layer. In this way, a predetermined voltage is simultaneously applied to the first to third cathodes 78m to 782, so that they can be simultaneously formed on all surfaces of the first to third substrates. The third layer of the film (TiN), the second layer of the film (A1), and the first layer of the film (M 〇) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs are formed on the first film with the predetermined film thickness, After the 2nd and 3rd substrates were 90m, 902, and 903, the application of voltage to the first to third cathodes was stopped to stop sputtering. Then, 'the first substrate mounting portion 8 2 is formed in a horizontal state, so that the first substrate 9 OiB forming a three-layer film becomes a horizontal state, and the Chinese National Standard (CNS) A4 specification (210 X 297 public love) -35-" 530096 A7 B7 V. Description of the invention (33) a delivery mechanism (not shown), the first substrate 9101 is transported from the vacuum tank 75 to the transport room 7 9 The chamber 7 9 uses a transport mechanism (not shown) (please read the precautions on the back and then @this page) to transport the fourth substrate 9 0 4 in a horizontal state into the vacuum tank 7 5 and make it tightly contacted. The first substrate mounting portion 8 2 held in a horizontal state: (Figure 1 1 (e)). As described above, in the vacuum processing apparatus 7 4 ′ shown in FIG. 10 (a), when a film formation process is performed on a plurality of substrate surfaces, a first layer of thin film is formed on the first substrate 90. After (Mo), the second substrate 90! Is transported into the vacuum chamber, and the second substrate film (A1) formed on the first substrate 90! Can be simultaneously on the second substrate 9! 2 Forming the first layer of thin film (Mo): Since the film is formed one by one each time and the sub-substrate is transported into the vacuum tank, the film can be formed in accordance with the order, so the time required for film formation can be shortened. • Green · However, in the case of a sputtering device, where a new target is set on the cathode, and the sputtering is performed without any treatment, the surface will be deteriorated and the discharge will be unstable. Arc discharge will occur on the surface and deteriorate. The film quality of the film formed by the sputtering result is problematic. Figure 12 of the Employees' Cooperative Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs shows the time when the inside of the vacuum tank with the target object was applied to the atmosphere and then the vacuum tank was formed into a vacuum state again, and was supplied to the target. The relationship between the body's accumulated power and the number of arc discharges. According to Figure 12, if the accumulated power is 1 Kwh or less, the number of arc discharges will be 100 times or more and the arc discharge will occur frequently, but if the accumulated power is 2 K wh or more, it will be reduced to 1. If the division is less than 2 times, the number of arc discharges will increase if the accumulated power decreases. The paper size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) _ 36-530096
五、發明說明（34 ) 胃電力增大，則電弧放電的發生次數減少。 (請先閱讀背面之注意事項再本頁) 增大靶體物的積算電力，而降低電弧放電的發生次數 2方法，已被廣泛使用預先一定量濺射靶體物（以下，稱 爲前置濺射。 過去前置濺射使模擬用的玻璃基板，在其表面使其形 成薄膜。玻璃基板強度較弱，膜厚只可以形成1 程度 的薄膜；進行充分的前置濺射，由於必須形成5 0 # m程 度的厚膜，因而過去必須頻繁地更換複數片的玻璃基板並 且成膜，因而過去由於更換模擬用玻璃基板的更換時間， 前置濺射須要長時間。 不過，在第10 (a)圖所示之真空處理裝置74， 因如上述第4基板載置部8 2 4呈板狀成形，所以在前置灘 射時，使其豎立呈板狀所形成之第4基板載置部8 2 4而使 其對向於靶體物，使其濺射靶體物而能使其成膜在第4基 板載置部8 2 4的表面。 經濟部智慧財產局員工消費合作社印製 進而，在第4基板載置部8 24的表面進行A 1溶射， 施予膜脫落對象。因而利用前置濺射就是在第4基板載置 部8 2 4的表面形成薄膜，也不致因薄膜脫落而污染裝置內 。此樣，利用第4基板載置部8 2 4，不使用模擬用的玻璃 基板就可以進行前置濺射。 如上述過在第1 0 ( a )圖所示之真空處理裝置7 4 ，因不須要使用模擬用的玻璃基板，所以不須要模擬用基 板的更換時間，可以縮短前置濺射所要的時間。 如上述過在第1 0 ( a )圖所示之真空處理裝置7 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-37 - 530096 A7 _ B7 五、發明說明（35 ) ’因不須要模擬用的玻璃基板，所以不須要模擬用基板的 更換時間，可以縮短前置濺射所要的時間。 然而，在第10 (a)圖所示之真空處理裝置74， 呈板狀成形第4基板載置部8 2 4，但本發明並不限於此， 被構成爲在框體狀的基板載置部能裝脫地安裝金屬板亦可 。在此情況，當裝置維修之際，可以更換金屬板。 進而在第1 0 ( a )圖所示真空處理裝置7 4的真空 槽7 5內，爲了進行上述過的濺射，而設有〇密封環。在 第1 3圖表示設有〇密封封環9 9之真空處理裝置7 4的 要部斷面圖。 在第1 3圖只表示基板載置部8 2及第3陰極7 83 ; 表示基板載置部8 2利用驅動機構8 4 a豎立，與第3陰 極7 8 3平行地對向配置的狀態。〇密封環9 9被設置在真 空槽7 5的內壁使其圍繞面向第3陰極7 8 3之視窗的周圍 :在面向第.1、第2陰極78:、782之窗口的周圍則未 設置。 利用設置〇密封環9 9，而在保持基板9 0的狀態下 豎立基板載置部8 2，與第3陰極7 8 3對向配置，則以基 板載置部8 2、框體7 6、第3陰極7 8 3所隔開之空間 9 4內形成爲氣密；使空間9 4中的氣相與真空槽7 5中 的氣相隔離。 在框體7 6設置未圖示的排氣口及氣體導入口，在氣 體導入口連接被設在真空槽7 5外部之氣體導入系9 8， 起動氣體導入系9 8則濺射氣體及N 2等的反應性氣體分別 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐）-38- (請先虬讀背面之注意事項再9本頁) · 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 五、發明說明（36 ) 從氣體導入口導入到空間9 4內，從排氣口真空排氣。 在此狀態下，所定電壓施加到第3陰極7 83。在第3 陰極783設置Ti (鈦）靶體物（未圖示），所定的電壓 施加到第3陰極7 8 3，則濺射T i靶體物，所被濺射的 T i與^^2氣體反應，而進行上述過反應性濺射，因此在基 板9 0的表面形成T i N膜。 以基板載置部8 2、框體7 6、第3陰極7 83所隔開 之空間9 4內形成爲氣密，被導入到此空間9 4內之濺射 氣體或反應性氣體進不到真空槽7 5內，所以所定電壓施 加到第3陰極7 8 3而進行反應性濺射，並且所定電壓施加 到第1、第2陰極78i、 782,可以在對向於各別的陰 極78!、782之基板表面分別形成Mo膜、A 1膜。 然而，第10 (a)圖所示之真空處理裝置74，具 有陰極作爲處理手段，構成濺射裝置，但本發明並不限於 此，適用於其他的成膜裝置，例如適用於CVD裝置等亦 可。 另外，在設有第3陰極7 8s之窗口 7 5 c的周圍設置 〇密封環9 9，只有第3陰極形成爲氣密狀態，進行與第 1、第2陰極不同的處理，但本發明並不限於此，在任何 1個窗口設置0密封環亦可，若爲必要則在全部的窗口 7 5a、 75b、 75c設置〇密封環之構成亦可。 進而，使用四角形的真空槽7 5，在其內壁面的三面 面向第1〜第3陰極7 8:〜7 8s所構成，但若爲真空槽 形成爲多角形而分別設置在壁面之構成亦可。例如使用六 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-39 - (請先閱讀背面之注意事項再填寫本頁) -¾ -線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 530096 ________Β7 __ 五、發明說明（37 ) 胃开彡的真空槽，而在其內壁面的五面分別配置陰極亦可。 另外，在第1 3圖則是將0密封環9 9設置在真空槽 ΊΤ 5的內壁，但本發明並不限於此，在基板載置部8 2側 設置〇密封環亦可。 進而，使用Ο密封環作爲密封材，但若爲可以將以基 板載置部8 2、框體7 6、第3陰極7 8 3所隔開之空間9 4內形成爲氣密則並不限於此。 〔發明效果〕 得到小型且高產量之真空處理裝置，特別是適用於濺 射裝置的情況，可以在單一的真空槽形成多層膜。 另外’不使用模擬的玻璃基板就可以濺射，進而可以 在單一的真空槽進行處理氣相不同之處理。 〔圖面之簡單說明〕 第1 ( a )圖係爲說明本發明一實施形態的真空處理 裝置之斷面圖；第1 ( b )圖係爲說明本發明一實施形態 的基板豎立裝置之斜視圖；第i ( c )圖係爲說明本發明 一實施形態的基板豎立裝置之平面圖；第1 ( d )圖係爲 說明基板豎立裝置的第1豎立姿勢之圖；第1 ( e )圖係 爲說明基板豎立裝置的第2豎立姿勢之圖。 第2 ( a )圖係爲說明本發明其他實施形態的真空處 理裝置之斷面圖；第2 ( b )圖係爲說明本發明其他實施 形態的基板豎立裝置之豎立狀態的側面圖；第2 ( c )圖 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮）-40 - I I I ! I 訂·1111111 (請先閱讀背面之注意事項再填寫本頁) « 530096 A7 ___ B7 五、發明說明（38 ) 係爲說明本發明其他實施形態的水平狀態之基板豎立裝置 的側面圖；第2 ( d )圖係爲說明本發明其他實施形態的 水平狀態之基板豎立裝置的斜視圖。 第3 ( a )圖係爲說明本發明其他實施形態基板載置 部的能通過基板狀態之平面圖；第3 ( b )圖係爲說明本 發明其他實施形態基板載置部的能通過基板狀態之斷面圖 :第3 ( c )圖係爲說明本發明其他實施形態基板載置部 的能載置基板狀態之平面圖；第3(d)圖係爲說明本發 明其他貫施形態基板載置部的能載置基板狀態之斷面圖。 第4 ( a )圖係爲表示本發明其他實施形態基板載置 部的變更移動基板作業之第1斷面圖；第4(b)圖係爲 表示本發明實施形態基板載置部的變更移動基板作業之平 面圖；第4 ( c )圖係爲表示本發明其他實施形態基板載 置部的變更移動基板作業之第2斷面圖；第4(d)圖係 爲表示本發明其他實施形態基板載置部的變更移動基板作 業之第3斷面圖。 第5 ( a )圖係爲表示本發明其他實施形態基板載置 部的變更移動基板作業之第4斷面圖；第5 ( b )圖係爲 表示本發明其他實施形態基板載置部的變更移動基板作業 之第5斷面圖。 第6 ( a )圖係爲說明本發明其他實施形態的真空處 理裝置之第1斷面圖；第6 (b)圖係爲說明本發明其他 實施形態的真空處理裝置之第2斷面圖。 第7 ( a )圖係爲針對本發明的其他實施形態，說明 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-41 - 請 先 閱_ 讀 背 之 注 意 事 項 再 % 本 頁 經濟部智慧財產局員工消費合作社印製 530096 A7 B7 五、發明說明（39 ) (請先閱讀背面之注意事項再填寫本頁) 具有3個陰極之真空處理裝置的動作之第1斜視圖；第7 (b )圖係爲針對本發明的其他實施形態，說明具有3個 陰極之真空處理裝置的動作之第2斜視圖；第7 ( c )圖 係爲針對本發明的其他實施形態，說明具有3個陰極之真 空處理裝置的動作之第3斜視圖。 第8 ( d )圖係爲針對本發明的其他實施形態，說明 具有3個陰極之真空處理裝置的動作之第4斜視圖；第8 (e )圖係爲針對本發明的其他實施形態，說明具有3個 陰極之真空處理裝置的動作之第5斜視圖；第8 (f)圖 係爲針對本發明的其他實施形態，說明具有3個陰極之真 空處理裝置的動作之第6斜視圖。 第9 ( g )圖係爲針對本發明的其他實施形態，說明 具有3個陰極之真空處理裝置的動作之第7斜視圖；第9 (η )圖係爲針對本發明其他實施形態，說明具有3個陰 極之真空處理裝置的動作之第8斜視圖；第9 (i)圖係 爲針對本發明的其他實施形態，說明具有3個陰極之真空 處理裝置的動作之第9斜視圖。 經濟部智慧財產局員工消費合作社印製 第1 0 ( a )圖係爲說明本發明其他實施形態的真空 處理裝置之斷面圖；第1 〇 ( b )圖係爲·說明本發明其他 實施形態基板豎立裝置的豎立狀態之側面圖；第1 〇 ( c )圖係爲說明本發明其他實施形態水平狀態的基板豎立裝 置之側面圖’第1 〇 ( d )圖係爲說明本發明其他實施形 態豎立狀態的基板豎立裝置之斜視圖。 第1 1 ( a )圖係爲說明本發明其他實施形態真空處 42 本紙張尺度適用巾關家標準（CNS)A4規格（210 X 297公爱） 530096 A7 B7 五、發明說明（4〇 ) 理裝置的動作之第1圖；第11 (b)圖係爲說明本發明 其他實施形態真空處理裝置的動作之第2圖；第11(C )圖係爲說明本發明其他實施形態真空處理裝置的動作之 第3圖；第1 1 ( d )圖係爲說明其他實施形態真空處理 裝置的動作之第4圖；第1 1 ( d )'圖係爲說明本發明其 他實施形態真空處理裝置的動作之第5圖。 第1 2圖係爲說明大氣開放後靶體物的積算電力與_ 弧放電的發生次數之關係圖形。 第1 3圖係爲說明本發明其他實施形態的真空處理裝 置之要部斷面欄。 第1 4圖係爲表示過去真空處理裝置的一例之圖。 第1 5圖係爲表示過去技術成膜室的一例之圖。 〔圖號說明〕 請 先 閱· 讀 背 φ 之 注 意 事 項 再 m 本 頁 經濟部智慧財產局員工消費合作社印製 31、 41、 71、 81 基板豎立裝置 3 22、42 丨、4 2 2、423、80 基板載置部 30、 41、 61、 75、 93 真空槽 34 回轉構件 35 驅動軸 47、 57、 67 掛鈎 49 基板通過孔 72 回轉台 75a、75b、75c 窗口 7 6 1 . 7 6 2 . 7 0 3 框體 (CNS)A4 規格（210 X 297 公釐） -43- 530096 A7 __Β7_ 五、發明說明（41 ) 99 〇密封環（密封材） -------------^--- (命先¾¾.背面'之注意事項再本頁) 經濟部智慧財產局員工消費合作社印製V. Description of the Invention (34) As gastric power increases, the number of arc discharges decreases. (Please read the precautions on the back of this page before this page.) Increasing the accumulated power of the target and reducing the number of arc discharges 2 methods have been widely used in advance a certain amount of sputtering target (hereinafter referred to as the front Sputtering. In the past, pre-sputtering used a glass substrate for simulation to form a thin film on the surface. The glass substrate is relatively weak, and the film thickness can only form a thin film. 5 0 # m thick film, so in the past, multiple glass substrates had to be frequently replaced and formed. Therefore, in the past, due to the replacement time of the glass substrate for simulation, the pre-sputtering took a long time. However, in the 10th ( a) The vacuum processing device 74 shown in the figure is formed in a plate shape as the fourth substrate mounting portion 8 2 4 described above. Therefore, when the front substrate is shot, the fourth substrate mounting is formed in a plate shape. The part 8 2 4 is made to face the target, so that the target can be sputtered to form a film on the surface of the fourth substrate mounting part 8 2 4. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Furthermore, in the fourth substrate mounting portion 8 24 The surface is subjected to A 1 dissolution shooting to apply the film falling object. Therefore, by using front sputtering, a thin film is formed on the surface of the fourth substrate mounting portion 8 2 4 and the inside of the device is not polluted by the falling film. In this way, the fourth The substrate mounting portion 8 2 4 can perform pre-sputtering without using a glass substrate for simulation. As described above, the vacuum processing device 7 4 shown in FIG. 10 (a) does not require the use of a simulation. The glass substrate does not require the replacement time of the simulation substrate, which can shorten the time required for pre-sputtering. As mentioned above, the vacuum processing device shown in Figure 10 (a) 7 4 This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) -37-530096 A7 _ B7 V. Description of the invention (35) 'Since the glass substrate for simulation is not required, the replacement time of the substrate for simulation is not required, and the front splash can be shortened However, in the vacuum processing device 74 shown in FIG. 10 (a), the fourth substrate mounting portion 8 2 4 is formed in a plate shape. However, the present invention is not limited to this and is configured in a housing. Metal plate can be detachably mounted on the substrate mounting portion Yes. In this case, the metal plate can be replaced when the device is being repaired. Furthermore, in the vacuum tank 75 of the vacuum processing device 7 4 shown in FIG. 10 (a), it is set to perform the above-mentioned sputtering. A seal ring is provided. A cross-sectional view of a main part of the vacuum processing device 74 provided with a seal ring 9 9 is shown in FIG. 13. Only the substrate mounting portion 8 2 and the third cathode 7 are shown in FIG. 13. 83; indicates a state where the substrate mounting portion 8 2 is erected by the driving mechanism 8 4 a and is arranged to face the third cathode 7 8 3 in parallel. The seal ring 9 9 is provided on the inner wall of the vacuum tank 75 to surround it. Around the window facing the third cathode 7 8 3: There is no setting around the window facing the .1, 2 cathodes 78 :, 782. A seal ring 9 9 is provided, and the substrate mounting portion 8 2 is erected while the substrate 90 is held, and the third cathode 7 8 3 is arranged to face the substrate mounting portion 8 2, the frame body 7 6, The space 9 4 partitioned by the third cathode 7 8 3 is formed to be airtight; the gas phase in the space 9 4 is isolated from the gas phase in the vacuum tank 75. An exhaust port and a gas introduction port (not shown) are provided in the housing 76, and the gas introduction port is connected to a gas introduction system 9 8 provided outside the vacuum tank 75, and the starting gas introduction system 98 is a sputtering gas and N Reactive gases of 2nd grade and so on. This paper size is applicable to China National Standard (CNS) A4 (210x 297 mm) -38- (Please read the precautions on the back first and then 9 pages). • Consumption by the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 530096 A7 B7 V. Description of the invention (36) It is introduced from the gas introduction port into the space 94, and is evacuated from the exhaust port by vacuum. In this state, a predetermined voltage is applied to the third cathode 7 83. A Ti (titanium) target (not shown) is provided on the third cathode 783, and a predetermined voltage is applied to the third cathode 7 8 3, and then the T i target is sputtered, and the T i and ^^ which are sputtered are ^^ 2 gas reacts to perform the above-mentioned over-reactive sputtering, so a T i N film is formed on the surface of the substrate 90. The space 9 4 partitioned by the substrate mounting portion 8 2, the frame body 7 6, and the third cathode 7 83 is formed to be airtight, and the sputtering gas or the reactive gas introduced into the space 9 4 cannot enter. In the vacuum chamber 75, a predetermined voltage is applied to the third cathode 7 8 3 for reactive sputtering, and a predetermined voltage is applied to the first and second cathodes 78i, 782, which can be opposed to the respective cathodes 78! Mo and A 1 films are formed on the substrate surfaces of 782 and 782, respectively. However, the vacuum processing apparatus 74 shown in FIG. 10 (a) has a cathode as a processing means and constitutes a sputtering apparatus. However, the present invention is not limited to this, and is applicable to other film forming apparatuses, such as a CVD apparatus. can. In addition, a seal ring 9 9 is provided around the window 7 5 c provided with the third cathode 7 8s, and only the third cathode is formed in an airtight state, and a treatment different from that of the first and second cathodes is performed. It is not limited to this, and a zero seal ring may be provided in any one window. If necessary, a seal ring may be provided in all windows 75a, 75b, and 75c. Further, a quadrangular vacuum tank 75 is used, and the three surfaces of the inner wall surface thereof face the first to third cathodes 7 8: to 7 8s. However, if the vacuum tank is formed in a polygonal shape, it may be provided on the wall surface. . For example, the use of six paper sizes is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -39-(Please read the precautions on the back before filling out this page) Cooperative printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative, 530096 ________ Β7 __ V. Description of the invention (37) A vacuum tank with an open stomach, and cathodes may be arranged on five sides of the inner wall surface. In addition, in FIG. 13, the 0 seal ring 9 9 is provided on the inner wall of the vacuum tank ΊΤ 5. However, the present invention is not limited to this, and a 0 seal ring may be provided on the substrate mounting portion 8 2 side. Furthermore, the O seal ring is used as the sealing material, but it is not limited to the case where the space 9 4 partitioned by the substrate mounting portion 8 2, the frame 7 6, and the third cathode 7 8 3 can be formed airtight. this. [Effects of the Invention] A small-sized and high-yield vacuum processing apparatus is obtained, and it is particularly suitable for a sputtering apparatus, and a multilayer film can be formed in a single vacuum tank. In addition, it can be sputtered without using a simulated glass substrate, and can be processed in a single vacuum chamber with different gas phases. [Brief Description of Drawings] Figure 1 (a) is a cross-sectional view illustrating a vacuum processing apparatus according to an embodiment of the present invention; Figure 1 (b) is a perspective view illustrating a substrate erecting apparatus according to an embodiment of the present invention. FIG. I (c) is a plan view illustrating a substrate erecting device according to an embodiment of the present invention; FIG. 1 (d) is a view illustrating a first erecting posture of the substrate erecting device; FIG. 1 (e) It is a figure explaining the 2nd standing posture of a board | substrate erection apparatus. Fig. 2 (a) is a sectional view illustrating a vacuum processing apparatus according to another embodiment of the present invention; Fig. 2 (b) is a side view illustrating a standing state of a substrate erecting apparatus according to another embodiment of the present invention; (c) The paper size of the drawing applies to the Chinese National Standard (CNS) A4 specification (210 X 297) -40-III! I order 1111111 (Please read the precautions on the back before filling this page) «530096 A7 ___ B7 V. Description of the invention (38) is a side view of a substrate erecting device for explaining a horizontal state of another embodiment of the present invention; FIG. 2 (d) is a perspective view of a substrate erecting device for explaining a horizontal state of another embodiment of the present invention . Figure 3 (a) is a plan view illustrating the state of the substrate-mounting portion that can pass through the substrate in another embodiment of the present invention; Figure 3 (b) is a view illustrating the state of the substrate-passing portion that can pass through the substrate in another embodiment of the present invention Sectional view: FIG. 3 (c) is a plan view illustrating a state where a substrate can be mounted on a substrate mounting portion of another embodiment of the present invention; FIG. 3 (d) is a substrate mounting portion illustrating another embodiment of the present invention A sectional view of a state where a substrate can be placed. Fig. 4 (a) is a first cross-sectional view showing the operation of changing and moving a substrate mounting portion in another embodiment of the present invention; and Fig. 4 (b) is a view showing the change and movement of a substrate mounting portion in accordance with an embodiment of the present invention. Plane view of substrate operation; Figure 4 (c) is a second cross-sectional view showing the operation of changing the substrate on the substrate mounting portion of another embodiment of the present invention; Figure 4 (d) is a substrate showing another embodiment of the present invention The third cross-sectional view of the operation of changing the placement section and moving the substrate. Fig. 5 (a) is a fourth cross-sectional view showing the operation of changing the substrate mounting portion in another embodiment of the present invention, and Fig. 5 (b) is a diagram showing the modification of the substrate mounting portion in another embodiment of the present invention. The fifth cross-sectional view of the moving substrate operation. Fig. 6 (a) is a first cross-sectional view illustrating a vacuum processing apparatus according to another embodiment of the present invention; and Fig. 6 (b) is a second cross-sectional view illustrating a vacuum processing apparatus according to another embodiment of the present invention. Figure 7 (a) is for other embodiments of the present invention, illustrating that this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -41-Please read _ Precautions for reading and then% Printed on this page by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperative 530096 A7 B7 V. Description of Invention (39) (Please read the precautions on the back before filling this page) The first oblique view of the operation of the vacuum processing device with 3 cathodes 7 (b) is a second perspective view illustrating the operation of a vacuum processing apparatus having three cathodes for another embodiment of the present invention; FIG. 7 (c) is a view illustrating another embodiment of the present invention, A third perspective view illustrating the operation of the vacuum processing apparatus having three cathodes. Fig. 8 (d) is a fourth perspective view illustrating the operation of a vacuum processing apparatus having three cathodes for another embodiment of the present invention; Fig. 8 (e) is an explanation for another embodiment of the present invention The fifth perspective view of the operation of the vacuum processing apparatus having three cathodes; the eighth (f) diagram is a sixth perspective view illustrating the operation of the vacuum processing apparatus having three cathodes according to another embodiment of the present invention. Fig. 9 (g) is a seventh perspective view illustrating the operation of a vacuum processing apparatus having three cathodes in accordance with another embodiment of the present invention; Fig. 9 (η) is an illustration of another embodiment of the present invention The eighth perspective view of the operation of the vacuum processing apparatus with three cathodes; the ninth (i) diagram is a ninth perspective view illustrating the operation of the vacuum processing apparatus with three cathodes according to another embodiment of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 10 (a) is a cross-sectional view of a vacuum processing apparatus illustrating other embodiments of the present invention. Figure 10 (b) is a diagram illustrating another embodiment of the present invention. Side view of the substrate standing device in an upright state; FIG. 10 (c) is a side view of the substrate standing device in a horizontal state illustrating other embodiments of the present invention. 'No. 10 (d) is a view illustrating another embodiment of the present invention. An oblique view of a substrate erecting device in an erected state. Figure 1 1 (a) is a diagram illustrating the vacuum position of other embodiments of the present invention. 42 The paper size is applicable to the Household Standard (CNS) A4 specification (210 X 297 public love). 530096 A7 B7 V. Description of the invention (40) The first diagram of the operation of the device; the 11th (b) diagram is the second diagram illustrating the operation of the vacuum processing apparatus according to another embodiment of the present invention; the 11th (C) diagram is the diagram illustrating the vacuum processing apparatus according to the other embodiment of the present invention. FIG. 3 of the operation; FIG. 11 (d) is a fourth diagram illustrating the operation of the vacuum processing apparatus in another embodiment; FIG. 1 (d) is a diagram illustrating the operation of the vacuum processing apparatus in other embodiments of the present invention Figure 5. Figure 12 is a graph illustrating the relationship between the accumulated power of the target and the number of arc discharges that occur after the atmosphere is opened. Fig. 13 is a sectional view of a main part of a vacuum processing apparatus for explaining another embodiment of the present invention. Fig. 14 is a diagram showing an example of a conventional vacuum processing apparatus. FIG. 15 is a diagram showing an example of a conventional film forming chamber. [Illustration of drawing number] Please read and read the notes on φ before m. Printed on the page 31, 41, 71, 81 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy on this page Printed on the substrate 3 22, 42 丨, 4 2 2, 423 , 80 Substrate mounting section 30, 41, 61, 75, 93 Vacuum tank 34 Rotating member 35 Drive shaft 47, 57, 67 Hook 49 Substrate passing hole 72 Rotary table 75a, 75b, 75c Window 7 6 1. 7 6 2. 7 0 3 Frame (CNS) A4 Specifications (210 X 297 mm) -43- 530096 A7 __Β7_ V. Description of the invention (41) 99 〇 Sealing ring (sealing material) ------------ -^ --- (Matters first ¾¾. Note on the back side of this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs
本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -44-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -44-