TW519677B - Deposition uniformity control for electroplating apparatus, and associated method - Google Patents
Deposition uniformity control for electroplating apparatus, and associated method Download PDFInfo
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- TW519677B TW519677B TW90125342A TW90125342A TW519677B TW 519677 B TW519677 B TW 519677B TW 90125342 A TW90125342 A TW 90125342A TW 90125342 A TW90125342 A TW 90125342A TW 519677 B TW519677 B TW 519677B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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Abstract
Description
519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明() 續案申請資訊: 本揭露書所主張之優先權為美國專利暫時申請案,序 號 60/216,790,於2000年 7月 7日所申請,其名稱 為,,VERTICAL ADJUSTMENT FOR ELECTROPLATING APPARATUS AND ASSOCIATED METHOD”(在此列為參考文件)。 本案為先前所申請之美國專利案之續案申請,其申請 ,序號為09/289,074,於1999年4月8曰所申請,其名稱 為 ’’ELECTRO-CHEMICAL DEPOSITION SYSTEM’,(在此歹ij 為參 考文件)。 發明領域= 本發明係關於金屬薄膜層沉積於基板上,特別是在金 屬薄膜沉積於基板時所使用之基板承載座的定位方式。 發明背景: 先前限制於積體電路板上導線製造之電鍍製程,現在 則用來在基板上所形成的種子層上沉積金屬。在電鍍時沉 積於基板上之複合層包括擴散阻障層、種子層和金屬層薄 膜。金屬層薄膜填入基板上之種子層所形成的特徵中。包 括電鍍之填入特徵製程的一個實施例包含了最初在欲電 鍍之基板表面上沉積擴散阻障層,製程方法則為物理氣相 沉積(PVD)或化學氣相沉積法(CVD)。接著,以例如PVD 或CVD之製程方法在擴散阻障層上沉積種子層。然後以 電鍍方式在基板之種子層上沉積金屬層。最後,所沉積之 第4頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) .........•「…囔.........、玎.........· (請先閲讀背面之注意事項再填寫本頁) 519677 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明( 金屬層以另一個製程例如化學機械研磨(CMp)法加以全面 平坦化而定義出具導電性之内連線妹構。 在電鍍t後,所沉積足金屬層的輪廓為測量金屬層沉 積於基板上不同位置足種子層上之厚.度的均勻度。通常此 輸廓取自基板上種子層之周圍到其中心。而所沉積之金屬 層的輪廓因而也提供了金屬層沉積到基板上之種子層的 沉積速率均勻度。例如,位於基板上之種子層若經歷了大 量的金屬層沉積’則其輪廓厚度將比基板上種子層經歷了 較少:!:金屬層’儿積之厚度為厚。在電鍍之後的製程如Cmp 時,決定金屬層之輪廓變得相當重要。此輪廓可用來決定 是否需要進一步的製程以補償變化的電鍍厚度及/或沉積 在種子層上之金屬層不需要的截面形狀。例如,若有一基 板在接下來的製程時發現金屬層沉積在基板種子層周圍 的輪廓厚度要比金屬層沉積在基板種子層中心的輪摩厚 度來的厚。在CMP製程時,基板周圍之上的金屬層研磨 蝕刻程度將比基板中心之金屬層研磨蝕刻程度來得大,以 便在CMP之後提供較為平坦之金屬層厚度。此選擇性研 磨或蝕刻在產生基板上均勻的金屬層沉積厚度是有必要 的。在CMP製程之後,整個種子層上將顯現出均勻的金 屬層沉積厚度。 在不規則形狀之物體上沉積金屬層為具有挑戰性的 工作。於某些傳統之電鍍系統中,其意欲在電鍍製程時控 制金屬層沉積於基板上之輪廓外觀。若由基板中心到周圍 所沉積之金屬層厚度愈均勻,則後續製程時(例如CMP)在 第5頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ........丨··1·:重::.....訂.........# (請先閲讀背面之注意事項再填寫本頁) 519677 A7519677 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Application Information for Continuation: The priority claimed in this disclosure is the provisional US patent application, serial number 60 / 216,790, July 7, 2000 The name of this application is, VERTICAL ADJUSTMENT FOR ELECTROPLALATING APPARATUS AND ASSOCIATED METHOD "(herein referred to as a reference document). This case is a renewed application for a previously applied US patent case, and its application number is 09 / 289,074. It was applied on April 8, 1999, and its name is "ELECTRO-CHEMICAL DEPOSITION SYSTEM '" (here 歹 ij is the reference document). Field of the Invention = The present invention relates to the deposition of a metal thin film layer on a substrate, especially on a substrate The positioning method of the substrate carrier used when the metal thin film is deposited on the substrate. BACKGROUND OF THE INVENTION: The electroplating process previously limited to the manufacture of wires on integrated circuit boards is now used to deposit metal on the seed layer formed on the substrate. The composite layer deposited on the substrate during plating includes a diffusion barrier layer, a seed layer, and a metal layer film. The metal layer film is filled in Among the features formed by the seed layer on the board. One embodiment of the filling feature process including electroplating includes initially depositing a diffusion barrier layer on the surface of the substrate to be plated. The process method is physical vapor deposition (PVD) or Chemical vapor deposition (CVD). Next, a seed layer is deposited on the diffusion barrier layer by a process method such as PVD or CVD. Then a metal layer is deposited on the seed layer of the substrate by electroplating. Finally, the fourth deposited The paper size of this page applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ......... "" ... 囔 ........., 玎 ....... .. (Please read the notes on the back before filling out this page) 519677 A7 B7 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (The metal layer is fully processed by another process such as chemical mechanical polishing (CMp) method Flattening defines a conductive interconnect structure. After plating, the contour of the deposited foot metal layer is a measure of the thickness of the foot layer on the substrate. The profile is taken from around the seed layer on the substrate The contour of the deposited metal layer thus provides a uniform deposition rate of the seed layer on which the metal layer is deposited on the substrate. For example, if a seed layer on the substrate undergoes a large amount of metal layer deposition, its contour thickness will be Experienced less than the seed layer on the substrate:!: The thickness of the metal layer is thicker. In the process after electroplating, such as Cmp, determining the contour of the metal layer becomes very important. This contour can be used to determine whether further Processes to compensate for varying plating thicknesses and / or unwanted cross-sectional shapes of metal layers deposited on seed layers. For example, if a substrate is found in the following process, the contour thickness of the metal layer deposited around the seed layer of the substrate is thicker than the thickness of the wheel friction deposited on the center of the substrate seed layer. During the CMP process, the degree of grinding and etching of the metal layer above the substrate will be greater than the degree of grinding and etching of the metal layer in the center of the substrate, so as to provide a flatter metal layer thickness after CMP. This selective grinding or etching is necessary to produce a uniform metal layer deposition thickness on the substrate. After the CMP process, a uniform metal layer deposition thickness will appear on the entire seed layer. Depositing metal layers on irregularly shaped objects is a challenging task. In some conventional electroplating systems, it is intended to control the contour appearance of the metal layer deposited on the substrate during the electroplating process. If the thickness of the metal layer deposited from the center of the substrate to the surrounding area becomes more uniform, the subsequent papermaking process (such as CMP) on page 5 applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ... .. 丨 · 1 ·: Re :: ..... Order ......... # (Please read the notes on the back before filling this page) 519677 A7
f請先閲讀背面之注意事項再場寫本頁) 基板上所執行的研磨或蝕刻程度就愈少,以便產生均勻厚 度之沉積金屬層薄膜。因此,CMp設備有較少的磨耗,而 較少的研磨表示CMP時間也會縮短。 電鍍製程也可用在半導體製程以外其它的領域,如金 屬汽車保險桿。一般在電鍍製程時,在種子層上之特定電 鐘目標點的距離,經由電鍍溶液到陽極,將反比於此電缝 目標點經由電鍍溶液的電性阻抗。由陽極加到電鍍目標點 之電流密度為陽極和此電鍍目標點之間距離的函數。在電 鍍目標點之沉積速率和加到此特定電鍍目標點之電流密 度有直接的關係。因此,在特定電鍍目標點之沉積速率將 反比於最接近之陽極點的距離。當電鍍目標上不同的點和 陽極之距離有不同的差距時,提供一個所需的或一致的電 鍍金屬沉積速率到電鍍目標上將很困難。例如,電鍍一個 大型且具曲面的金屬目標如汽車保險桿即很困難,因為此 汽車保險桿表面上的不同點和陽極的距離也有所不同。假 設陽極和目標物之間的電場在電鍍時沒有改變,則愈接近 陽極的電鍍目標點將會有最高的沉積速率。 經濟部智慧財產局員工消費合作社印製 場造型設備,例如開關器(shutter)和隔板(baffle),均 可用來補償由於不同的電鍍目標點和陽極有不同的距離 所產生的不均勻沉積厚度。場造型設備可以改變電鍍系統 内之電場的形狀’因此電場會在不規則型狀的物體上加強 其沉積速率的均勻性。然而,此類如開關器或隔板之場造 型設備的使用需要複雜、維護及花費乃結合另一個複雜的 機械設備***到電鍍系統中加以使用。通常也需要一個促 第6頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐)—— Α7f Please read the precautions on the back before writing this page.) The less grinding or etching is performed on the substrate, in order to produce a uniform thickness of deposited metal layer film. Therefore, CMP equipment has less wear and tear, and less grinding means that CMP time is also reduced. The plating process can also be used in other fields than semiconductor processes, such as metal automobile bumpers. Generally, in the electroplating process, the distance between a specific clock target point on the seed layer and the anode through the plating solution will be inversely proportional to the electrical impedance of the electric slot target point through the plating solution. The current density applied from the anode to the plating target is a function of the distance between the anode and the plating target. The deposition rate at the plating target point is directly related to the current density applied to this particular plating target point. Therefore, the deposition rate at a specific plating target point will be inversely proportional to the distance of the closest anode point. When the distance between the different points on the plating target and the anode is different, it will be difficult to provide a required or consistent plating metal deposition rate to the plating target. For example, it is difficult to plate a large, curved metal target such as a car bumper, because the distance between the different points on the car bumper surface and the anode is also different. Assuming that the electric field between the anode and the target does not change during electroplating, the closer the anode's electroplating target point will have the highest deposition rate. Modeling equipment for the printing field of the consumer cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, such as switches and baffles, can be used to compensate for uneven deposition thickness caused by different plating target points and anodes with different distance . The field modeling device can change the shape of the electric field within the plating system, so the electric field will enhance the uniformity of the deposition rate on the irregularly shaped object. However, the use of such field-building equipment, such as switches or partitions, requires complexity, maintenance, and expense in combination with another complex mechanical device to be used in a plating system. Usually also requires a promotion page 6 This paper size applies to China National Standard (CNS) A4 size (210x297 mm)-Α7
]不同的位置以調整電鍍目標表 519677 五、發明説明() 動器來移動% 面不同的沉積速率。另外,此媼诛剂' Μ , r此场造型設備如開關器和隔板 通常並不和電鍍裝置同一中心,以極4, . Y “以便加強不規則型狀物體 上的電場。此不同中心之媒#开丨〗m %造土 ά又備因而可以提供電鍍溶 液中不預期的電場變化’結果產生了加到基板上種子層之 沉積速率的不均勻性。 另一種場造型方法包括了在具有不同形狀或直徑的 多個電鍍室中電鍍此基板。此不同的電鍍室因而各自產生 不同形狀的電場。例如,若一基板在其中一電鍵室中處理 後產生不希望得到的金屬潛於種子層上之沉積,則其它類 似大小和結構之基板即可在另一個不同直徑或形狀的售 鍍室中處理。具有不同直徑或尺寸之不同電鍍室可產生不 同的電場。改變電鍵室以S供不_電場將需要成本和Ν 間,多個電鍍室的使用和改變電鍍室這二者皆是如此。Λ 且也有可能沒有任何一個電鍍室可提供所需的電鍍相 性。 因此,仍需要提供一個簡單的機構,以便在種子層2 以電化學沉積金屬層時可控制基板上之種子層由中心至 周圍的電流密度。沉積到基板上之種子層的金屬層輪廓, 和基板上不同種子層位置的電流密度有關。 發明目的及概沭: 本發明提供了一種在具有金屬種子層的基板上 化學沉積金屬層之方法和其設備。此設備包含了可承 第7頁 本紙張尺度適用中國國家標準(CNS)A4規格(210χ297公釐) ........….........訂.........# (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 519677 A7 B7 五、發明說明() 板之基板承載座。電解質室於一製程位置接收此基板。促 動器則連接到基板承載座並可調整基板和電解質室之相 對位置。此方·法包含了在具有金屬種子層的基板上以電化 學沉積金屬層,並包含了將基板放在電解質室中,而此電 解質室之設計即為接收基板之用。此方法也包含了相對於 電解質室來調整置放基板,以便在基板上的種子層得到所 要的沉積均勻性。於一態樣中,調整置放基板也包含了在 電解質室中垂直放置基板。 圖式簡簟說明: 值得注意的是此些附圖僅為本發明之典型實施 例,且並不構成本發明之限制範圍,本發明仍有其它相對 等的實施例。 第1圖為簡化的典型電鍍室之截面示意圖; 第2圖為電化學電鍍(ECP)系統之一實施例之透視圖; 第3圖為第2圖所示之ECP系統之上視圖; 第4圖為旋轉-清洗-乾燥(s R D)模組之一實施例的透視 圖’並結合了清洗和溶解液體之入口; 第5圖為第4圖之旋轉-清洗-乾燥(s R D )模組之側邊截面 示意圖,其顯示了位於處理位置之基板垂直置放於 流體入口之間; 弟6圖為電鍍製程室之一實施例之截面示意圖; 第7圖為電性接觸元件之一實施例之部分截面透視圖; 第8圖為電性接觸元件之另一接觸墊實施例之截面透視 第8頁 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) ------------裝— (請先閱讀背面之注意事項再填冩本頁) 訂---- Ψ 經濟部智慧財產局員工消費合作社印製 519677 A7 B7 五、發明說明() _ , (請先閱讀背面之注意事項再填寫本頁) 第9圖為電性接觸元件之另一接觸墊和獨立襯墊之實施例 之截面透視圖; 第1 0圖為電性接觸元件之獨立襯墊之截面透視圖; 第11圖為簡化的電路示意圖,代表ECP系統到每個接觸 栓; 第1 2圖為一基板組合之一實施例的截面示意圖; 第12A圖為第12圖之囊袋區域之放大截面示意圖; 第13圖為基板承載座平板之一實施例的部分截面示意 圖, 第14圖為歧管之一實施例的部分截面示意圖; 第1 5圖為囊袋之一實施例的部分截面示意圖; 第1 6圖為一電解溶液系統之一實施例的示意圖; 第17圖為一快速熱退火反應室之一實施例的截面示意 圖; 第1 8圖為一電性接觸元件之另一實施例的透視圖; 第1 9圖為一基板承載座組合之另一實施例的部分截面示 意圖, 第20圖為一密封陽極之一實施例的截面示意圖; 經濟部智慧財產局員工消費合作社印製 第21圖為一密封陽極之另一實施例的截面示意圖; 第22圖為一密封陽極之另一實施例的截面示意圖; 第23圖為一密封陽極再一實施例的截面示意圖; 第24圖為具有蹼狀機械手臂之傳送機械手臂主架構之一 實施例的上視圖; 第9頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 519677] Different positions to adjust the plating target table 519677 V. Description of the invention () The actuator moves to the different deposition rates of the surface. In addition, this tincture 'M, r this field modeling equipment such as switches and partitions is usually not at the same center as the plating device, with a pole 4, .Y "in order to strengthen the electric field on the irregular object. This different center The media # 开 丨〗 m% soil preparation is prepared and can provide unexpected changes in the electric field in the plating solution. As a result, the deposition rate of the seed layer added to the substrate is uneven. Another field modeling method includes The substrate is plated in multiple plating chambers having different shapes or diameters. The different plating chambers each thus generate an electric field with a different shape. For example, if a substrate is processed in one of the key chambers, an undesired metal is buried in the seed Deposition on the layer, then other substrates of similar size and structure can be processed in another plating room with a different diameter or shape. Different plating rooms with different diameters or sizes can generate different electric fields. Change the key room to S for No. The electric field will require cost and time, both for the use of multiple plating chambers and for changing the plating chamber. Λ, and it is possible that no one plating chamber can provide Therefore, it is still necessary to provide a simple mechanism to control the current density of the seed layer on the substrate from the center to the surroundings when the metal layer is electrochemically deposited on the seed layer 2. The seed layer deposited on the substrate The contour of the metal layer is related to the current density of different seed layer positions on the substrate. Purpose and summary of the invention: The present invention provides a method for chemically depositing a metal layer on a substrate with a metal seed layer and an apparatus therefor. According to page 7, this paper size applies Chinese National Standard (CNS) A4 specification (210x297 mm) .................... Order ......... # (Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 B7 V. Description of the invention () The substrate carrier of the board. The electrolyte chamber receives this board at a process position. The device is connected to the substrate carrier and can adjust the relative position of the substrate and the electrolyte chamber. This method includes electrochemically depositing a metal layer on a substrate with a metal seed layer, and includes placing the substrate in the electrolyte chamber. The design of the electrolyte chamber is to receive the substrate. This method also includes adjusting the placement of the substrate relative to the electrolyte chamber so that the seed layer on the substrate can obtain the desired deposition uniformity. In one aspect, adjusting the placement The substrate also includes a vertical placement of the substrate in the electrolyte chamber. Brief description of the drawings: It is worth noting that these drawings are only exemplary embodiments of the present invention and do not constitute a limiting scope of the present invention. The present invention still has other Relative embodiment. Figure 1 is a simplified cross-sectional view of a typical electroplating chamber; Figure 2 is a perspective view of an embodiment of an electrochemical plating (ECP) system; Figure 3 is an ECP system shown in Figure 2 Top view; Figure 4 is a perspective view of one embodiment of the spin-wash-dry (s RD) module, and the inlet of the cleaning and dissolving liquid is combined; Figure 5 is the rotation-wash-dry of Figure 4 (S RD) A schematic side sectional view of the module, which shows that the substrate at the processing position is placed vertically between the fluid inlets; Figure 6 is a schematic sectional view of an embodiment of the plating process chamber; Figure 7 is electrical Contact element A partial cross-sectional perspective view of one embodiment; FIG. 8 is a cross-sectional perspective view of another contact pad embodiment of the electrical contact element. Page 8 This paper size is applicable to China National Standard (CNS) A4 (210 X 297). ) ------------ Install— (Please read the notes on the back before filling in this page) Order ---- 印 Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs 519677 A7 B7 V. Description of the invention () _, (Please read the precautions on the back before filling out this page) Figure 9 is a sectional perspective view of another embodiment of the contact pad and independent pad of the electrical contact element; Figure 10 is the electrical Sectional perspective view of the independent pad of the sexual contact element; Figure 11 is a simplified circuit diagram representing the ECP system to each contact plug; Figure 12 is a schematic sectional view of an embodiment of a substrate assembly; Figure 12A is Figure 12 is an enlarged cross-sectional view of a pouch area; Figure 13 is a partial cross-sectional view of an embodiment of a flat plate of a substrate carrier, and Figure 14 is a partial cross-sectional view of an embodiment of a manifold; Figure 15 is a capsule Partial cross-sectional view of one embodiment of the bag; FIG. 16 is A schematic view of an embodiment of an electrolytic solution system; FIG. 17 is a schematic cross-sectional view of an embodiment of a rapid thermal annealing reaction chamber; FIG. 18 is a perspective view of another embodiment of an electrical contact element; The figure is a partial cross-sectional schematic diagram of another embodiment of a substrate carrier combination, and FIG. 20 is a cross-sectional schematic diagram of one embodiment of a sealed anode. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 21 is a sealed anode. A schematic sectional view of another embodiment; FIG. 22 is a schematic sectional view of another embodiment of a sealed anode; FIG. 23 is a schematic sectional view of another embodiment of a sealed anode; and FIG. 24 is a transmission with a web-shaped robot arm Top view of one embodiment of the main structure of the robot arm; page 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 519677
五、發明說明() 第25圖為具有可轉動頭部組合241〇之製程頭部組合的另 一實施例; (請先閱讀背面之注意事項再填寫本頁) 第2 6a和2 6b圖為除氣模組之一實施例的截面示意圖; 第27圖為第25圖之基板承載座之一實施例的放大截面示 意圖; 第28圖為從基板之邊緣開始作為橫座標,相對於電化學 沉積之後位於陽極之上不同高度之銅厚度(微米) 的曲線圖實施例;以及 第2 9圖為第2 7圖中所示的可轉動頭部組合以力量加到基 板上使得基板成為弓形的實施例侧視圖。 於說明書中使用的…之上、…之下、底部、往上、往 下、較高的、較低的和其它有關位置的說法均為了描述圖 形中所示的實施例,且可能因為和製程設備的相對位置而 有所不同。 同時,為了幫助說明起見,在圖形中相同的元件將儘 可能以相同的參考數字加以標示。 經濟部智慧財產局員工消費合作社印製 圖號對照說明: 10 電鍍室 12 電解質室 14 基板承載座 15 電鍍表面 16 陽極 20 接觸環 21 頂端開口 22 基板 66 推擠板 67 電性接觸元件 159 幫浦系統 210 負載站 第10頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 519677 經濟部智慧財產局員工消費合作社印製 212旋轉-清洗-乾燥(SRD)站 216 主架構傳送站 2 2 0 電解質溶液補充系統 224 基板卡夾接收區域 230 基板*** 2 3 6 S R D模組 242 主架構傳送機械手臂 246 機械葉片 248 蹼狀控制裝置 2 52 蹼狀械機手臂 260 中央處理單元(CPU) 264 電路部分 330b 側壁 3 3 0 d 碗狀空間 334 腳座促動器 337 夾鉗 339 出口 342 托架部分 344 連結部分 347a 閥門 348 第一噴嘴 350 第二流體入口 352 第二導管 第11頁 A7 B7 五、發明說明() 2 0 0 電化學電鍍(ECP)系統 211 熱退火反應室 214 主架構 218 製程站 222 控制器 228 負載站傳送機械手臂 232 基板卡夾 2 3 8 卡夾 240 製程室 244, 2402 機械手臂 250 主體 254 真空吸爪 262 記憶體 3 3 0 a 底面 330c 上半遮蓋 332 腳座支撐 3 3 6 腳座 338 腳座上表面支撐基板 340 第一導管入口 343 連接元件 346 第一導管 347 第一流體 349a 第二閥門 351 第二噴嘴 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公t ) ---------------------------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明説明() 經濟部智慧財產局員工消費合作社印製 353 連接元件 400,420 製程室 410 頭部組合 430 碗狀物 440 電解質溶液收集器 443 開口 446 内壁 447 底部 448 外壁 450 基板承載座組合 452 頭部組合支架 454 置放柱 456 懸臂樑 457 懸臂樑促動器 458 基板組合促動器 460 置放平板 462 頭部組合軸 464 基板承載器 466 陰極接觸環 470 囊狀組合 472 容器本體 474 陽極組合 476 過濾器 478 環狀堰 480 内部環狀平坦部分 482 中間傾斜部分 484 外部傾斜部分 486 環狀凸緣 487 密封環 488 螺栓 494 陽極圍場 496 可溶解金屬 497 螺紋部分 498 1%極電性接點 499 固定螺帽 502 圓柱部分 504 底面部分 506 環狀凸緣 508 孔洞 510 電解質溶液入口 602 電解質溶液槽 603 給料模組 605 過濾模組 607 閥門 608 流體幫浦 610 控制器 612 電解質溶液供應管線 613 抽樣管線 第12頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ........-Μ: .........訂.........« (請先閲讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明() 615 自動滴定分析器 616 化學分析模組 620 電解質溶液廢棄排放 622 電解質溶液廢棄處理系統 624 熱交換器 630 除氣模組 632 排水性薄膜 634 通道 636 真空系統 638 密封器 700 電阻器 702 電源供應器 704 感測器/警報器 754 基板電鍍表面 762 凸緣 764 肩狀部分 765 導電構件 768 基板座落表面 770 環絕緣本體 772 内部電性接觸墊 776 導電連接部分 7 80 外部電性接觸墊 782 襯墊 802 容器本體 832 基板承載座平板 836 囊袋 837 密封墊 838 流體源 840 環狀凹槽 841 真空埠 842 入口 843 通道 845 幫浦 846 歧管 847 交叉閥 848 内肩部 849 真空噴射器 850 外肩部 851 軟管 852 置放軌道 853 壓力管路 854 流體出口 855 真空管路 856 環狀唇形密封墊 857 覆蓋物 859 真空/壓力幫浦系統 第13頁 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 519677 A7 B7 五、發明説明() 經濟部智慧財產局員工消費合作社印製 861 關閉閥 902 圍場 904 加熱器板 906 基板支撐栓 907 加熱器 908 基底 910 侧壁 912 頂端 913 冷卻平板 914 反射器絕緣盤 920 熱電耦 926 管狀導管 928 上升板 930 促動器 932 上升軸 934 密封凸緣 944 釋放/檢查閥 1800 陰極接觸環 1810 置放部分 1820 基板接收部分 1822 環狀基板座落表面 1824 凸塊 1900 基板承載座組合 1910 基板承載座平板 1912 背部表面 1914 前表面 1916 彈性0型環 1918 環形凹槽 1920 孔洞 2000 密封陽極 2002 陽極密封薄膜 2004 陽極板 2006 進料貫穿 2008 頂端密封薄膜 2010 底部密封薄膜 2012 薄膜支撐環 2014 流體入口 2016 旁通出口 2020,2022 流體控制閥 2410 可轉動性之頭部組合 2452 頭部組合支架 2454 置放柱 2455 柱覆蓋物 2456 懸臂樑 2457 懸臂樑促動器 2458 頭部上舉促動器 2459 樞轴接頭 2460 置放滑軌 ........./…耋.........訂.........耱 (請先閲讀背面之注意事項再填寫本頁} 第14頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 519677 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明() 2464 轉動促動器 2466 上舉導軌 2468 抽心 * 2470 轴心 2706 頭部轉動馬達 2720 流體護罩 2728 上彈簧表面 2729 彈簧摺箱連接器 2732 彈簧組合 2760 頭部轉動外殼 2763 軸心護罩 2765 接觸外殼 2767 電性進料貫穿 2771 電性導體 2773 氣動進料貫穿 2775 中空的線圈部分 2776 磁性旋轉元件 2777 磁性部分 2785 軸承 2790 真空供應器 2792 套筒元件 2794 流體導管 2795 周圍凹槽 2796 流體孔洞 2798 流體通道 2799 旋轉底座 2802 橫座標 2804 縱座標 2806 曲線 發明詳細說明: 下列說明中將描述多個電化學電鍍(ECP)系統2〇〇之 實施例。基板承載座設備之操作將以加強種子層之表面的 沉積均勻性方式加以描述。基板則為欲進行電缝之主要目 標物。而在此所說的基板(substrate)可為任何有關半導體 晶圓、基板或其目標物。此基板一般為圓柱形或方形結 構,同時包括了不規則結構如凹口或平坦的切面以協助製 程。此基板(substrate)也包括了大型的光發射二極體(LED) 第15頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ......................訂......... · (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 519677 A7 --------- R7___ 五、發明説明() 面板如一般使用於電腦和電視之顯示面板。 一般地,本揭露書係有關於將基板放置於含有電解溶 液(電解1中的位置以控制電鍍製程。於一實施例中,基 板上種子層之垂直尚度可加以調整以修改加到種子層的 電流密度。多個電鍍系統實施例之結構和操作將加以插 述,例如第1圖中所示的電鍍室和第2和第3圖中之電鍍 系統平台200。放置基板種子層之多個實施例亦將加以插 述。 第1圖顯示了用於電鍍之電鍍室10之一實施例。電 鍍室10包括了一電解質室12,一基板承載座14,一陽 極16,和一接觸環2〇。電解質室12包含了電解溶液,且 此包解質皇具有頂端開口 21由接觸環20所包圍定義。基 板承載座14放置於電解質室之上,並且能夠將基板浸泡 到私解液中或將其移出。基板承載座可經由電解質室之頂 端開口進入或移出電解溶液。此基板承載座丨4也可以在 製程時於電解溶液中將基板固定在需求的位置上。接觸環 20包含了多個金屬或金屬合金電性接觸點,可和基板上之 種子層電性接觸。控制器222則分別和此多個接觸點和陽 極一者包性連接。當基板上之種子層進行電鍍時,此控制 器將提供電流到基板上。因此控制器可決定從陽極到基板 上之種子層的電流/電壓。在電鍍室1〇操作時,基板22 放置於陽極上且從陽極到基板上之種子層將產生電流。 當種子層浸泡在電解溶液中時,種子層為金屬層沉積 時基板上之被沉積層。當足夠的負向電壓由基板經過電解 第16頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) -------------.........訂......... (請先閲讀背面之注意事項再填寫本頁) _ 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明() 溶液加到陽極上時,種子層將充滿相對於陽極足夠的負向 電壓,並使得金屬層沉積到種子層上(電鍍)。此負向電壓 即為電鍍電壓(plating voltage)。將電鍍電壓加到電解溶液 中可在此電解溶液的空乏區中破壞正電荷銅離子和負電 荷硫離子之間的硫化銅離子鍵。空乏區則接近基板上的種 子層。大量帶正電荷的銅離子將沉積在基板上具負向電壓 的種子層上。在電鍍製程時銅離子由空乏區的沉積產生了 空乏區中銅離子的缺乏。而在電解質室中從陽極到基板上 之種子層間所產生的電壓使得電流由陽極經電解溶液流 到種子層。一原子等級的電子交換將結合此電流而驅使陽 極中的銅原子由陽極進入電解溶液中,此陽極一般為銅金 屬塊。 靠近基板上種子層之電解溶液中的區域性電壓相當 的小,約為1伏特之等級,因此到達基板上種子層表面的 銅離子主要是銅離子在電解溶液中的擴散作用而完成 的。種子層的電壓等級則使銅離子沉積在種子層上形成金 屬層。在陽極和基板上種子層之間較高的電壓將促使更多 離子進入電解溶液中,因而有較高沉積速率的金屬離子沉 積在基板上種子層之上。陽極和種子層之間的電塵影響到 種子層之沉積速率只有對所有擴散離子均轉換成銅離子 的擴散限制下。在此擴散限制之上,陽極和種子層之間電 壓的進一步增加將使得電解溶液中的水分子鍵結破壞。在 擴散限制以上的電壓增加並不會改善沉積到種子層上之 金屬層的速率。如果電解質室212中沒有進行再循環或再 第17頁 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ 297公爱) ......................訂.........雜 (請先閲讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明() 補充’當更多的銅離子由電解溶液沉積到種子層上一段時 間之後,空乏區的大小最終還是會擴大。維持新鮮的電解 溶液流經種子層可更新電解溶液中的化學成分,並縮減空 乏區的大小。 第2圖為電鍍系統平台200之一實施例的透視圖。第 3圖為第2圖所示之電鍍系統平台200之概要示圖。第2 和第3圖最好是一起參考。電鍍系統平台200 —般包含有 負載站210’熱退火反應室211,旋轉-清洗-乾燥(srd)站 212,主架構214,和電解質溶液補充系統220。電鍍系統 平台200最好包含在乾淨的環境内並利用如 PLEXIGLAS (此為 Rohm and Haas Company 〇f WestV. Description of the Invention () Figure 25 is another embodiment of a process head combination with a rotatable head combination 2410; (Please read the precautions on the back before filling this page) Figures 2 6a and 2 6b are A schematic cross-sectional view of one embodiment of an outgassing module; FIG. 27 is an enlarged cross-sectional view of an embodiment of a substrate bearing seat of FIG. 25; and FIG. 28 is a horizontal coordinate starting from the edge of the substrate. Example of a graph of copper thickness (microns) at different heights above the anode; and Figure 29 is the implementation of the combination of the rotatable head shown in Figure 27 and Figure 7 to apply force to the substrate to make the substrate arcuate Case side view. The terms "above, below, bottom, up, down, higher, lower, and other relevant positions" used in the description are the embodiments shown in the description drawings, and may be due to the manufacturing process. The relative position of the device varies. At the same time, for the purpose of explanation, the same elements in the drawings will be marked with the same reference numerals as much as possible. Contrast description of printed numbers printed by employees ’cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: 10 Electroplating room 12 Electrolyte room 14 Substrate carrier 15 Plated surface 16 Anode 20 Contact ring 21 Top opening 22 Substrate 66 Pushing plate 67 Electrical contact element 159 Pump System 210 load station page 10 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 519677 Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economy 212 Spin-wash-dry (SRD) station 216 Main architecture Transfer station 2 2 0 Electrolyte solution replenishing system 224 Substrate clip receiving area 230 Substrate locator 2 3 6 SRD module 242 Main frame transfer robot 246 Mechanical blade 248 Web control unit 2 52 Web robot arm 260 Central processing unit (CPU) 264 Circuit section 330b Side wall 3 3 0 d Bowl-shaped space 334 Foot actuator 337 Clamp 339 Exit 342 Bracket section 344 Connecting section 347a Valve 348 First nozzle 350 Second fluid inlet 352 Second conduit 11th Page A7 B7 V. Description of the invention 2 0 0 Electrochemical plating (ECP) system 211 Thermal annealing reaction chamber 214 Main frame 218 Process station 222 Controller 228 Load station transfer robot 232 Substrate clamp 2 3 8 Clip 240 Process chamber 244, 2402 Robot arm 250 Main body 254 Vacuum gripper 262 Memory 3 3 0 a Bottom surface 330c Upper half cover 332 Foot support 3 3 6 Feet 338 Supporting base plate on the upper surface of the foot 340 First conduit inlet 343 Connecting element 346 First conduit 347 First fluid 349a Second valve 351 Second nozzle This paper size applies to Chinese National Standard (CNS) A4 specification (210 X 297 male t) ---------------------------- (Please read the precautions on the back before filling this page) 519677 A7 B7 5 Description of the invention () Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 353 Connecting elements 400, 420 Process room 410 Head assembly 430 Bowl 440 Electrolyte solution collector 443 Opening 446 Inner wall 447 Bottom 448 Outer wall 450 Combination bracket 454 Placement column 456 Cantilever beam 457 Cantilever beam actuator 458 Substrate combination actuator 460 Placement plate 462 Head combination shaft 464 Substrate carrier 466 Cathode contact ring 470 Capsule combination 472 Container body 474 Anode combination 476 Filter 478 Ring weir 480 Inner ring flat portion 482 Middle inclined portion 484 Outer inclined portion 486 Ring flange 487 Seal ring 488 Bolt 494 Anode pad 496 Dissolvable metal 497 Threaded portion 498 1% pole connection Point 499 Fixing nut 502 Cylindrical part 504 Bottom part 506 Ring flange 508 Hole 510 Electrolyte solution inlet 602 Electrolyte solution tank 603 Feeding module 605 Filter module 607 Valve 608 Fluid pump 610 Controller 612 Electrolyte solution supply line 613 Sampling Pipeline page 12 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) ........- M: ......... Order ... . «(Please read the precautions on the back before filling this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () 615 Automatic titration analyzer 616 Chemical analysis module 620 Waste electrolyte discharge 622 Electrolyte solution disposal system 624 Heat exchanger 630 Degassing module 632 Draining membrane 634 Channel 636 Vacuum system 638 Sealer 700 Resistor 7 02 Power supply 704 Sensor / alarm 754 Substrate plating surface 762 Flange 764 Shoulder portion 765 Conductive member 768 Substrate seating surface 770 Ring insulation body 772 Internal electrical contact pad 776 Conductive connection portion 7 80 External electrical contact Pad 782 Pad 802 Container body 832 Substrate carrier plate 836 Pouch 837 Seal 838 Fluid source 840 Circular groove 841 Vacuum port 842 Inlet 843 Channel 845 Pump 846 Manifold 847 Cross valve 848 Inner shoulder 849 Vacuum ejector 850 outer shoulder 851 hose 852 placement rail 853 pressure line 854 fluid outlet 855 vacuum line 856 annular lip seal 857 cover 859 vacuum / pressure pump system page 13 (please read the precautions on the back first) (Fill in this page) This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 519677 A7 B7 V. Description of the invention () Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumption Cooperative 861 Closed valve 902 Paddock 904 Heater plate 906 Base plate support bolt 907 Heater 908 Base 910 Side wall 912 Top 913 Cooling plate 914 Reflector insulation plate 92 0 Thermocouple 926 Tubular tube 928 Rising plate 930 Actuator 932 Rising shaft 934 Sealing flange 944 Release / check valve 1800 Cathode contact ring 1810 Placement portion 1820 Substrate receiving portion 1822 Ring substrate seating surface 1824 Bump 1900 Substrate carrying Block combination 1910 Substrate carrier plate 1912 Back surface 1914 Front surface 1916 Elastic 0-ring 1918 Ring groove 1920 Hole 2000 Sealed anode 2002 Anode sealing film 2004 Anode plate 2006 Feed through 2008 Top sealing film 2010 Bottom sealing film 2012 Film support ring 2014 Fluid inlet 2016 Bypass outlet 2020, 2022 Fluid control valve 2410 Rotatable head assembly 2452 Head assembly bracket 2454 Placement column 2455 Column cover 2456 Cantilever 2457 Cantilever actuator 2458 Actuation on the head 2459 Pivot joint 2460 Place the slide rail ......... / ... 耋 ......... Order ......... 订 (Please read the precautions on the back first Refill this page} Page 14 This paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm) 519677 A7 B7 Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (2464) Rotary actuator 2466 Lifting rail 2468 Pulling heart * 2470 Shaft 2706 Head rotation motor 2720 Fluid shield 2728 Upper spring surface 2729 Spring folding box connector 2732 Spring combination 2760 Head rotation housing 2763 Shaft Shield 2765 Contact Housing 2767 Electrical Feed Through 2771 Electrical Conductor 2773 Pneumatic Feed Through 2775 Hollow Coil Part 2776 Magnetic Rotary Element 2777 Magnetic Part 2785 Bearing 2790 Vacuum Supply 2792 Sleeve Element 2794 Fluid Conduit 2795 Concave around Slot 2796 fluid hole 2798 fluid channel 2799 rotating base 2802 horizontal coordinate 2804 vertical coordinate 2806 Detailed description of the invention of the curve: In the following description, embodiments of a plurality of electrochemical plating (ECP) systems 200 will be described. The operation of the substrate carrier device will be described in terms of enhancing the deposition uniformity of the surface of the seed layer. The substrate is the main target for electrical stitching. The substrate referred to herein may be any related semiconductor wafer, substrate or its target. This substrate is generally cylindrical or square structure, and includes irregular structures such as notches or flat cut planes to assist the process. This substrate (substrate) also includes large light emitting diodes (LEDs). Page 15 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ............ .......... Order ......... (Please read the precautions on the back before filling out this page) Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 ---- ----- R7___ V. Description of the invention () The panel is generally used as a display panel of a computer and a television. Generally, this disclosure relates to placing a substrate in a position containing an electrolytic solution (electrolysis 1 to control the electroplating process. In one embodiment, the vertical degree of the seed layer on the substrate can be adjusted to modify the seed layer. The structure and operation of multiple embodiments of the plating system will be interpolated, such as the plating chamber shown in Figure 1 and the plating system platform 200 in Figures 2 and 3. Multiple substrate seed layers are placed The embodiment will also be interpolated. Figure 1 shows an embodiment of a plating chamber 10 for electroplating. The plating chamber 10 includes an electrolyte chamber 12, a substrate carrier 14, an anode 16, and a contact ring 2 〇. The electrolyte chamber 12 contains an electrolytic solution, and this solution has a top opening 21 defined by a contact ring 20. The substrate carrier 14 is placed on the electrolyte chamber, and the substrate can be immersed in the private solution or Remove it. The substrate carrier can enter or remove the electrolytic solution through the top opening of the electrolyte chamber. This substrate carrier 4 can also fix the substrate in the required position in the electrolytic solution during the manufacturing process. The contact ring 20 contains a plurality of metal or metal alloy electrical contact points, which can be in electrical contact with the seed layer on the substrate. The controller 222 is individually and individually connected to the multiple contact points and the anode. When the seed layer is plated, this controller will provide current to the substrate. Therefore, the controller can determine the current / voltage from the anode to the seed layer on the substrate. During operation in the plating chamber 10, the substrate 22 is placed on the anode and from A current will be generated from the anode to the seed layer on the substrate. When the seed layer is immersed in the electrolytic solution, the seed layer is the deposited layer on the substrate when the metal layer is deposited. When sufficient negative voltage is passed from the substrate through the electrolysis, page 16 of this paper Standards are applicable to China National Standard (CNS) A4 specifications (210X 297 mm) -------------......... Order ... (Please (Please read the notes on the back before filling this page) _ 519677 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () When the solution is added to the anode, the seed layer will be filled with sufficient negative voltage relative to the anode And cause the metal layer to be deposited on the seed layer (plating). The direction voltage is the plating voltage. Adding the plating voltage to the electrolytic solution can destroy the copper sulfide ion bond between the positively charged copper ions and the negatively charged sulfur ions in the empty region of the electrolytic solution. The empty region is close to Seed layer on the substrate. A large amount of positively charged copper ions will be deposited on the seed layer with a negative voltage on the substrate. During the electroplating process, copper ions are deposited from the empty regions, resulting in a lack of copper ions in the empty regions. The voltage generated from the anode to the seed layer on the substrate in the electrolyte chamber causes a current to flow from the anode to the seed layer through the electrolytic solution. An atomic level of electron exchange will combine this current to drive the copper atoms in the anode from the anode into the electrolytic solution. This anode is generally a copper metal block. The regional voltage in the electrolytic solution near the seed layer on the substrate is quite small, about 1 volt. Therefore, the copper ions reaching the surface of the seed layer on the substrate are mainly due to the diffusion of copper ions in the electrolytic solution. The voltage level of the seed layer causes copper ions to be deposited on the seed layer to form a metal layer. The higher voltage between the anode and the seed layer on the substrate will cause more ions to enter the electrolytic solution, so metal ions with a higher deposition rate are deposited on the seed layer on the substrate. Electrostatic dust between the anode and the seed layer affects the deposition rate of the seed layer only under the diffusion limit that all diffusing ions are converted to copper ions. Above this diffusion limit, a further increase in voltage between the anode and the seed layer will destroy the water molecule bonds in the electrolytic solution. Increasing the voltage above the diffusion limit does not improve the rate of metal layers deposited on the seed layer. If the electrolyte chamber 212 is not recirculated or re-paged, the paper size of this paper applies the Chinese National Standard (CNS) A4 specification (21〇 297 public love) ... ...... Order ......... Miscellaneous (Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Supplement 'As more copper ions are deposited on the seed layer from the electrolytic solution for a period of time, the size of the empty area will eventually expand. Maintaining a fresh electrolytic solution flowing through the seed layer renews the chemical composition in the electrolytic solution and reduces the size of the empty area. FIG. 2 is a perspective view of one embodiment of the plating system platform 200. FIG. 3 is a schematic diagram of the plating system platform 200 shown in FIG. 2. Figures 2 and 3 are best referenced together. The plating system platform 200 generally includes a load station 210 'thermal annealing reaction chamber 211, a spin-wash-dry (srd) station 212, a main frame 214, and an electrolyte solution replenishing system 220. The plating system platform 200 is preferably contained in a clean environment and utilizes, for example, PLEXIGLAS (this is Rohm and Haas Company 〇f West
Philadelphia,PA之註冊商標)之面板。主架構214 一般包 括了主架構傳送站216和複數個製程站218。每個製程站 218包括了一或多個製程室240。電解質溶液補充系統22〇 則位於電鍍系統平台2 0 0旁且單獨連接到製程室2 4 〇以便 循環用於電鍍製程的電解溶液。電鍍系統平台2〇〇也包括 了控制器222,其一般具有可程式化的微處理器。 第3圖中所示的控制器222包含了中央處理單元 (CPU)260,電路部分264,輸入輸出(I/O)界面264,和匯 流排(未顯示)。此控制器222可為一般目的之電腦、一微 處理器、一微控制器、或其它已知適合型式之電腦或控制 器。CPU260執行控制器222之程序和算術運算。控制器 222則控制製程、機械手臂操作 '閥門操作、時序控制等 等結合電鍍系統平台200之控制。控制器222控制了加到 第18頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------------- (請先閲讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明説明() 陽極16的電壓、基板22之電鍍表面15、和如第6圖中所 示的基板承載座組合450之操作。 (請先閲讀背面之注意事項再填、寫本頁) 記憶體262包括了隨機存取記憶體(RaM)和唯讀記憶 體(ROM),其儲存了電腦程式、運算域、操作者、尺寸值、 系統操作溫度和結構、及其它控制電鍍操作之參數等。匯 流排提供了 CPU260、電路部分264、記憶體262和1/0264 之間的數位訊息傳遞。匯流排也連接了 I / 〇 2 6 4到E C P系 統200之部分以便由控制器222接收數位訊息或傳遞數位 訊息。 1/02 64提供了界面在控制器222中的每個元件之間控 制數位訊息之傳遞。I / 〇 2 6 4也提供了控制器2 2 2之元件和 ECP系統200之不同部分之間的界面。電路部分264包本 所有其它使用者界面裝置,如顯示器和鍵盤。 經濟部智慧財產局員工消費合作社印製 負載站210最好包括一或多個基板卡夾接收區域 224 ’ 一或多個負載站傳送機械手臂228和至少一基板定 位器230。基板卡夾接收區域、負載站傳送機械手臂228 和基板***均包含在負載站210内並依系統所需的產能 加以配置。如第2和第3圖中之實施例所示的,負載站2工〇 包括了兩個基板卡夹接收區域224、兩個負載站傳送機械 手臂228和一個基板***230。内含有基板234之夷板 卡夾232乃載入基板卡夾接收區域224以將基板234導入 電鍍系統平台。負載站傳送機械手臂228則在基板卡爽 232和基板***230之間傳送基板234。負載站傳送機 械手臂228包含了傳統上所使用的典型傳送機械手臂。其 第19頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) ' --—-- 519677 A7 B7 五、發明説明( (請先閲讀背面之注意事項再填寫本頁) 板***230將每個基板234放置在所需的方位上以確保 基板可以適當的處理。負載站傳送機械手臂228也可將基 板234傳送於負載站210和SRD站212之間及負載站210 和熱退火反應室211之間。 第4圖所示為旋轉-清洗-乾燥模組之一實施例 的透視圖,並結合清洗和溶解流體入口。第5圖所示為第 4圖之旋轉-清洗-乾燥(SRD)模組側面截面示意圖,並顯示 一基板位於製程位置垂直放置在流體入口之間。SRD站 212最妤包括一或多個SRD模組236和一或多個基板通過 卡夾23 8。SRD站212最好包括兩個SRD模組236對應負 載站傳送機械手臂228的數目,而基板通過卡夹238則位 於每個SRD模組236之上。基板通過卡夾238可幫助基板 在負載站210和主架構214之間傳送。基板通過卡夬238 提供了負載站傳送機械手臂228和位於主架構傳送站216 中之機械手臂兩者存取的裝置。 經濟部智慧財產局員工消費合作社印製 參閱第4和第5圖,此SRD模組238包含了底面330a 和侧壁3 30b,且上半遮蓋330c共同定義出SRD模組之碗 狀空間330d,其中遮蓋乃貼附在側壁上並可將流體維持在 SRD模組中。另外,亦可使用一可移除的上蓋。腳座336 位於SRD模組中,其包括了腳座支撐332和腳座促動器 334。如第5圖中所示的,腳座3 3 6在製程時於腳座上表 面支撐基板33 8。腳座促動器334可轉動腳座以帶動旋轉 基板並如下面所描述的上升和下降腳座。基板則以複數個 夾鉗337固定在腳座上。夾鉗因離心力轉動而夹緊基板, 第20頁 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 且最好固足在基板製程區以外的邊緣。於一較佳實施例 中’夹甜只有在製程時當基板欲離開腳座才會加以接合固 足°真2通道(未顯示)也可和其它固定裝置一樣加以使 用。腳座具有複數個腳座臂33 6a和33 6b,因此經由第二 喷嘴喷出的流體可以實際的盡可能噴灑到基板之下表 面。出口 339可讓流體由srd模組中移除。 第一流禮347所流經的第一導管346將連接到閥門 3 4 7a上。此導管可為軟管、輸送管、或其它可輸送流體之 導管。閥門347a控制第一流體347之流動並可選自各種 不同的閥門包括針狀、球狀、蝶狀、或其它的閥門型式並 包含一閥門促動器如螺線管,且可由控制器2 2 2加以控 制。導管346乃連接到第一導管入口 34〇且位於基板之 上’同時並包含了托架部分342和SRD模組相接,連結部 分344和導管346相接。所示的第一流體入口具有單一的 第一噴嘴348以在壓力下輸送第一流體347到基板上部表 面。然而,也可利用複數個噴嘴和複數個流體入口放置於 SRD模組之内部周圍。位於基板上之喷嘴最好放置在基板 直徑的外面以減輕噴嘴中的流體滴到基板的危險性。第一 流體入口可放置在多個位置中,其中包括了經由位於基板 之上的上蓋。另外,噴嘴可利用連接元件3 4 3連接到多個 位置,此連接元件可為例如球形和托座接頭。 類似於上面所提到的第一導管和相關的元件,一第二 導管3 5 2則連接到第二閥門3 4 9 a和第二流體入口 3 5 0,且 具有第二喷嘴351。所示之第二流體入口 35〇乃位於基板 第21頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7Philadelphia, PA). The main frame 214 generally includes a main frame transfer station 216 and a plurality of process stations 218. Each process station 218 includes one or more process chambers 240. The electrolyte solution replenishing system 22 is located beside the plating system platform 200 and is separately connected to the process chamber 24 to recycle the electrolytic solution used for the plating process. The plating system platform 2000 also includes a controller 222, which typically has a programmable microprocessor. The controller 222 shown in FIG. 3 includes a central processing unit (CPU) 260, a circuit portion 264, an input / output (I / O) interface 264, and a bus (not shown). The controller 222 may be a general purpose computer, a microprocessor, a microcontroller, or other known suitable types of computers or controllers. The CPU 260 executes programs and arithmetic operations of the controller 222. The controller 222 controls the manufacturing process, the operation of the robot arm, the valve operation, the timing control, etc. in combination with the control of the electroplating system platform 200. The controller 222 controls the paper size added to page 18. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ------------- (Please read the precautions on the back before filling (This page) 519677 A7 B7 V. Description of the invention () The operation of the anode 16 voltage, the plated surface 15 of the substrate 22, and the substrate carrier combination 450 shown in FIG. (Please read the precautions on the back before filling and writing this page) Memory 262 includes random access memory (RaM) and read-only memory (ROM), which stores computer programs, computing domains, operators, and sizes Values, system operating temperature and structure, and other parameters that control plating operations. The bus provides digital information transfer between CPU260, circuit part 264, memory 262 and 1/0264. The bus also connects the I / O 264 to the part of the EC CP system 200 for receiving or transmitting digital messages by the controller 222. 1/02 64 provides an interface to control the transfer of digital messages between each element in the controller 222. I / 〇 2 64 also provides an interface between the elements of the controller 22 and the different parts of the ECP system 200. The circuit section 264 covers all other user interface devices such as displays and keyboards. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The load station 210 preferably includes one or more substrate clip receiving areas 224 ′ one or more load station transfer robots 228 and at least one substrate positioner 230. The substrate clip receiving area, the load station transfer robot 228, and the substrate positioner are all contained in the load station 210 and are configured according to the required capacity of the system. As shown in the embodiments in FIGS. 2 and 3, the load station 2 includes two substrate clip receiving areas 224, two load station transfer robot arms 228, and a substrate positioner 230. The plate clamp 232 containing the substrate 234 is loaded into the substrate clip receiving area 224 to introduce the substrate 234 into the plating system platform. The load station transfer robot 228 transfers the substrate 234 between the substrate clamp 232 and the substrate positioner 230. The load station transfer robot arm 228 contains a typical transfer robot arm traditionally used. Page 19 of this paper applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) '----- 519677 A7 B7 V. Description of the invention ((Please read the precautions on the back before filling this page) Board The positioner 230 places each substrate 234 in a desired orientation to ensure that the substrate can be properly processed. The load station transfer robot 228 can also transfer the substrate 234 between the load station 210 and the SRD station 212 and between the load station 210 and Thermal annealing reaction chamber 211. Figure 4 shows a perspective view of one embodiment of the spin-wash-dry module, combined with the cleaning and dissolving fluid inlets. Figure 5 shows the spin-wash in Figure 4 -Side cross-sectional view of the drying (SRD) module, and shows that a substrate is located in the process position and placed vertically between the fluid inlets. The SRD station 212 includes one or more SRD modules 236 and one or more substrates through the clip 23 8. The SRD station 212 preferably includes two SRD modules 236 corresponding to the number of load station transfer robotic arms 228, and the substrate through the clip 238 is located above each SRD module 236. The substrate through the clip 238 can help the substrate Transfer between load station 210 and main frame 214 The substrate provides access to both the load station transfer robot 228 and the robot arm located in the main frame transfer station 216 through the card 238. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, see Figures 4 and 5, This SRD module 238 includes a bottom surface 330a and a side wall 3 30b, and the upper half cover 330c collectively defines a bowl-shaped space 330d of the SRD module. The cover is attached to the side wall and can maintain the fluid in the SRD module. In addition, a removable top cover can also be used. The feet 336 are located in the SRD module and include the feet support 332 and the feet actuator 334. As shown in Figure 5, the feet 3 3 6 Support the substrate 33 on the upper surface of the foot during the manufacturing process. 8. The foot actuator 334 can rotate the foot to drive the rotation of the base and raise and lower the foot as described below. The base is fixed to the base with a plurality of clamps 337. On the foot. The clamp clamps the substrate due to the centrifugal force. Page 20 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, A7 B7. In a preferred embodiment, The substrate will only be engaged when the substrate is to be removed from the foot during the manufacturing process. The true 2-channel (not shown) can also be used in the same way as other fixtures. The foot has a plurality of foot arms 33 6a and 33 6b. The fluid sprayed by the second nozzle can be sprayed onto the lower surface of the substrate as much as possible. The outlet 339 allows the fluid to be removed from the srd module. The first conduit 346 through which the first flow 347 flows will be connected to the valve 3 4 7a. The conduit may be a hose, a delivery tube, or other conduit capable of conveying fluid. The valve 347a controls the flow of the first fluid 347 and can be selected from various valves including needle, ball, butterfly, or other valve types and includes a valve actuator such as a solenoid, and can be controlled by the controller 2 2 2 to control. The duct 346 is connected to the first duct inlet 34 and is located above the base plate. At the same time, the duct 346 includes a bracket portion 342 and the SRD module, and a connecting portion 344 and the duct 346 are connected. The first fluid inlet shown has a single first nozzle 348 to deliver the first fluid 347 under pressure to the upper surface of the substrate. However, multiple nozzles and multiple fluid inlets can also be used to place around the interior of the SRD module. The nozzle on the substrate is preferably placed outside the diameter of the substrate to reduce the risk of fluid from the nozzle dripping onto the substrate. The first fluid inlet can be placed in a number of locations, including via an upper cover located above the substrate. In addition, the nozzle can be connected to a plurality of positions using a connecting element 3 4 3, which can be, for example, a ball and a socket joint. Similar to the first conduit and related components mentioned above, a second conduit 3 5 2 is connected to the second valve 3 4 9 a and the second fluid inlet 3 50, and has a second nozzle 351. The second fluid inlet 35 shown is located on the substrate on page 21. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ ^ --- ----- ^ --------- (Please read the notes on the back before filling this page) 519677 A7
經濟部智慧財產局員工消費合作社印製 五、發明說明() 之下且具有一向上角度以便導引第二流體經由第二噴嘴 351到達基板下方。類似於第一流體入口的,此第二流體 入口也可包括複數個噴嘴、複數個流體入口和放置位置, 以及複數個包括利用連接元件3 5 3所調整的方位。每一個 流體入口可以多個位置延伸到SRD模組中。例如,可依所 需之SRD製程調整流體噴出的角度對準基板中心或基板的 周圍。 控制器222可分別控制位於SRD模組中的二種流體, 及其流率、壓力、和時間等,及其閥門的開關和旋轉的週 期。此控制器可以放在例如較遠的控制面板或控制室中並 以較遠的促動器進行流體控制。另一實施例以虛線加以顯 示’則提供了輔助流體入口 346a以導管346b連接到第一 導管3 4 6並具有控制閥3 4 6 c。此實施例可在溶解溶液使用 後在基板背面流過清洗溶液。此清洗溶液之使用不需要重 新定位基板或者將第二流體入口轉換成清洗溶液。 於一實施例中,在SRD模組碗狀空間裏基板的放置係 將欲 >儿積表面朝上。下面將會加以解釋,在此種配置下, 第一流體入口 一般係流經清洗溶液,通常為去離子水或酒 精。結果將使得基板背面向下且流經第二流體入口之流體 為溶解性流體,例如酸性溶液,包括了氣化氫、硫酸、鱗 酸、氫氟酸、或其它溶解性液體或流體,依所要溶解的材 料有關。另外,當所需的製程為清洗處理中的基板時,第 一流體和第二流體兩者皆為清洗液體如去離子水或酒 精。 第22頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 在操作時’腳座如第4圖中所示位於升起位置,且機 械手臂(未顯示)將基板面向上放置於腳座之上。腳座將基 板降低到製程位置並使基板位於第一和第二流體入口之 間。一般說來,腳座啟動器以大約5到大約5〇〇〇rpm的速 度轉動腳座,對2 00ππη之基板來說典型的範圍约在2〇到 約2 0 0 0rpm之間。旋轉時由於離心力的作用,使得夾鉗的 下半部337a依樞軸337b往外轉動,並朝向SRD模組側壁 周圍。夹麵的轉動力量使得夾鉗之上半部337c往内及往 下壓住固足基板338在腳座336之上,且最好是壓在基板 邊緣。夾鉗可以轉動到不與基板接觸的位置,並且只有在 製程中基板明顯的要離開腳座時才將基板固定在腳座 上。在腳座轉動基板時,一清洗溶液經由第一流體入口 3 “ 輸送到基板正面。第二流體如酸性溶液則經由第二流體入 口輸送到基板背面來移除不必要的沉積物。溶解性流體和 沉積物質起化學反應,將其溶解,然後將此物質由基板背 面沖走,並將此物質由不想產生沉積物之區域沖走。於一 較佳實施例中,清洗溶液的流量要大於溶解性流體的流 量,以保護基板正面不受到溶解性流體的影響。第一和第 二泥體入口除了其它因素之外,並和基板之尺寸、分別的 流動率、噴射形態和所要沉積的數量及形式等而調整到最 佳效能的位置。於某些例子中,在溶解性流體將不要的沉 積物落解以清除基板背面之後,清洗溶液也可經由第-节 體入口噴出。於某些例子中,可使用一輔助性流體入:: 接清洗溶液到基板背面,以清洗背面的溶解溶液殘餘物。 第23頁 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 適 度 尺 張 紙 本 Μ 公 97 2 X 110 一 2 I規 Μ 5) Ν (C 準 標 家 國 國 519677 A7 B7 五、發明說明() 在清洗基板之正面及/或背面之後,流體之流入將會停 止,腳座仍繼續轉動以旋轉基板,因而使得表面能有效的 乾燥。 ·裝 流體一般係以噴射方式來傳送,而其形態則和所需的 特殊噴嘴喷射形態之變化有關,其可包括扇狀、噴射狀、 圓椎狀和其它不同的形態。當第一流體為清洗溶液時,經 由不同流體入口之第一和第二流體的喷射形態為扇狀,其 壓力為每平方英对約1 0到約1 5镑(p s i)且流動率每分鐘 約1到3加侖(gpm)(對200 mm之基板來說)。 訂---------Φ, SRD系統也可用來移除沿著基板邊緣不必要的沉積 物,產生邊緣排除區域。由調整喷嘴的方位和佈置、流體 的流動率、基板的轉動速度、和流體的化學組成便可從基 板之邊緣及/或邊緣排除區域來移除不需要的沉積物。因 此,實際上避免沉積物質在基板之正面上溶解並不一定需 要包括基板之邊緣或邊緣排除區域。而且,避免沉積物質 在正面上之溶解可包括至少避免此溶解不會使具有沉積 物質之正面受到損傷。 經濟部智慧財產局員工消費合作社印製 完成邊緣排除區域溶解程序的一個方法為以大約1 〇 〇 到約1 0 0 0rpm的速度轉動基板,此時則分配溶液到基板的 背面。離心力將溶解流體移到基板邊緣並由於流體的表面 張力而沿著邊緣形成一層流體,因此溶解流體從基板邊緣 區域的背面到正面重疊形成。基板的轉動速度和溶解流體 的流動率可用來決定正面之重疊範圍。例如,轉動速率的 降低或流動速率的增加產生了不同面(例如:正面)之流體 第24頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 519677 A7 濟 部 智 慧 員 工 消 費 五、發明說明( 較少的重疊。另外’輸送到正面之清洗溶液的流動速率和 流動角度可加以調整而補償在基板邊緣及/或正面之溶解 流體層。在某些例子中,此溶解流體之使用最初可不需要 清洗么液而得到邊緣及/或邊緣排除區的移除,並接著上 面所描述之清洗/溶解程序。 SRD模組238連接在負載站210和主架構214之間。 主架構214 —般包含了主架構傳送站216和複數個製程站 218。參閱第2和第3圖,其顯示了主架構214包括了兩 個製程站218,每個製程站218具有兩個製程室24〇。主 架構傳送站216包括了主架構傳送機械手臂242。此主架 構傳送機械手臂242最好包含複數個單獨的機械手臂2“ 以提供製程站218和SRD站212中基板的獨立存取。如第 3圖中所示的,主架構傳送機械手臂242包含兩個機械手 臂244 ,相當於每個製程站218之製程室24〇的數目。每 個機械手臂244包括一機械葉片246在基板傳送時用以承 載基板。每個機械手臂244最好可獨立操作以便在系統中 各自傳送基板。另外,機械手臂244也可以協調方式操作, 當一機械手臂伸出時另一機械手臂就會收回。 王架構傳送站216最妤包括蹼狀控制裝置248。蹼狀 控制裝置可幫助主架構傳送機械手臂242之機械葉片 上的基板由面朝上轉成製程室24〇中面朝下以完成基板面 朝下之製程。蹼狀控制裝置248包括了主體250以提供相 對於主f豊250之垂直軸向的垂直和轉動位移,1 一蹲狀機 械手才252沿著蹼狀械機手臂奶之水平轴提供了轉動位 -----------裝--------訂-------— (請先閱讀背面之注意事項再填寫本頁) 社 印 第25頁 本纸張&適用r閱冢標準(CNS)A4 χ 297公餐_ 519677 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 五、發明說明() 移。一位於蹲狀機械手臂252末端的真空吸爪254在基板 翻轉及蹼狀控制裝置2 4 8傳逆其土 時可將其抓住。蹼狀控 :將基板234放入製程室24"進行面朝下的製 程。電鍍製程室之細節將在下面加以討論。 第24圖為具有蹼狀控制裝置之主架構傳送機械手臂 的上視圖。如第24圖中所示的主架構傳送機械手臂242 提供了附於主架構站之不同站台之間基板的傳送,包括了 製程站和SRD站。主架構傳送機械手臂m包括了 機械手臂24°2’如圖中所顯示的兩個,和附在機械手臂 2402末端的蹼狀控制裝置24〇4。蹼狀控制裝置為傳統上 所’知且可貼附在末端做為承載基板之機械手臂,例如 RR701模型’可由位於Milpitas,㈤如…之Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The description of the invention () has an upward angle to guide the second fluid through the second nozzle 351 to the bottom of the substrate. Similar to the first fluid inlet, this second fluid inlet may also include a plurality of nozzles, a plurality of fluid inlets and placement positions, and a plurality of positions including orientations adjusted using the connecting element 3 5 3. Each fluid inlet can extend into the SRD module in multiple locations. For example, the angle of fluid ejection can be adjusted to the center of the substrate or the periphery of the substrate according to the required SRD process. The controller 222 can control the two fluids located in the SRD module, and their flow rate, pressure, and time, as well as the opening and closing periods of their valves. This controller can be placed in, for example, a remote control panel or control room and fluid control can be performed with remote actuators. Another embodiment is shown in dashed lines' and an auxiliary fluid inlet 346a is provided which is connected to the first conduit 3 4 6 by a conduit 346 b and has a control valve 3 4 6 c. In this embodiment, the cleaning solution can be flowed on the back surface of the substrate after the dissolving solution is used. The use of this cleaning solution does not require repositioning the substrate or converting the second fluid inlet into a cleaning solution. In one embodiment, the substrate is placed in the bowl-shaped space of the SRD module with the product surface facing upward. As will be explained below, in this configuration, the first fluid inlet typically flows through a cleaning solution, usually deionized water or alcohol. The result will be that the backside of the substrate is downward and the fluid flowing through the second fluid inlet is a soluble fluid, such as an acidic solution, including gasified hydrogen, sulfuric acid, scale acid, hydrofluoric acid, or other soluble liquids or fluids, as required. Dissolved material related. In addition, when the required process is cleaning the substrate, both the first fluid and the second fluid are cleaning liquids such as deionized water or alcohol. Page 22 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- ^ -------- ^ ------- -(Please read the precautions on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () During operation, the feet are raised as shown in Figure 4 Position, and the robot arm (not shown) places the substrate face up on the stand. The stand lowers the substrate to the process position and positions the substrate between the first and second fluid inlets. Generally speaking, the foot starter rotates the foot at a speed of about 5 to about 5000 rpm. A typical range for a 200ππη substrate is about 20 to about 2000 rpm. Due to the centrifugal force during rotation, the lower half 337a of the clamp is rotated outward according to the pivot 337b, and faces the side wall of the SRD module. The rotation force of the clamping surface causes the upper half 337c of the clamp to press the foot-holding base plate 338 on the foot 336 inward and downward, and preferably on the edge of the base plate. The clamp can be rotated to a position where it is not in contact with the substrate, and the substrate is fixed on the foot only when the substrate is obviously away from the foot during the manufacturing process. When the substrate rotates the substrate, a cleaning solution is delivered to the front surface of the substrate through the first fluid inlet 3 ". A second fluid such as an acidic solution is delivered to the back of the substrate through the second fluid inlet to remove unnecessary deposits. Soluble fluid It chemically reacts with the deposited substance, dissolves it, and then flushes the substance from the back of the substrate, and flushes the substance from the area where the sediment is not desired. In a preferred embodiment, the flow rate of the cleaning solution is greater than the dissolution. The flow of the fluid to protect the front of the substrate from the influence of the soluble fluid. The first and second mud inlets are, among other factors, the size of the substrate, the respective flow rate, the spray pattern, the number of deposits and Form, etc. to adjust to the position of the best performance. In some examples, after the dissolving fluid dissolves unwanted deposits to remove the back of the substrate, the cleaning solution can also be sprayed through the inlet of the first section. In some examples You can use an auxiliary fluid into :: Connect the cleaning solution to the back of the substrate to clean the residue of the dissolved solution on the back. Page 23 ----------- Load- ------- Order --------- (Please read the precautions on the back before filling out this page) Moderate paper size M Male 97 2 X 110 1 2 I M 5) Ν ( C quasi standard home country 519677 A7 B7 V. Description of the invention () After cleaning the front and / or back of the substrate, the inflow of fluid will stop and the feet will continue to rotate to rotate the substrate, so that the surface can be effectively dried. · The loading fluid is generally transmitted by spraying, and its shape is related to the change of the spraying pattern of the special nozzle required. It can include fan-shaped, spray-shaped, cone-shaped and other different shapes. When the first fluid is When the cleaning solution is used, the spray patterns of the first and second fluids through different fluid inlets are fan-shaped, with a pressure of about 10 to about 15 pounds (psi) per square inch and a flow rate of about 1 to 3 gallons per minute. (Gpm) (for 200 mm substrate). Order --------- Φ, SRD system can also be used to remove unnecessary deposits along the edge of the substrate, resulting in edge exclusion areas. By adjusting the nozzle Orientation and arrangement, fluid flow rate, substrate rotation speed, and chemical composition of the fluid Unwanted deposits can be removed from the edges and / or edge exclusion areas of the substrate. Therefore, actually avoiding the dissolution of deposited materials on the front side of the substrate does not necessarily include the edges or edge exclusion areas of the substrate. Also, avoid Dissolution of the deposited material on the front side may include at least avoiding this dissolution without damaging the front side with the deposited material. One method of printing out the margin exclusion zone by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is to complete the dissolution process at about 1,000 to The substrate is rotated at a speed of about 100 rpm, and the solution is distributed to the back of the substrate at this time. The centrifugal force moves the dissolved fluid to the edge of the substrate and forms a layer of fluid along the edge due to the surface tension of the fluid. Back to front overlap. The rotation speed of the substrate and the flow rate of the dissolving fluid can be used to determine the overlapping range of the front faces. For example, a decrease in the rotation rate or an increase in the flow rate results in fluids with different sides (for example, the front side). Page 24 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 519677 A7. Consumption 5. Invention description (less overlap. In addition, the flow rate and flow angle of the cleaning solution delivered to the front side can be adjusted to compensate for the dissolving fluid layer at the edge of the substrate and / or the front side. In some examples, this dissolution The use of the fluid may initially remove the edge and / or the edge exclusion zone without cleaning the liquid, and then follow the cleaning / dissolution procedure described above. The SRD module 238 is connected between the load station 210 and the main frame 214. Main The architecture 214 generally includes a main architecture transfer station 216 and a plurality of process stations 218. Referring to Figures 2 and 3, it is shown that the main architecture 214 includes two process stations 218, each of which has two process rooms 24. The main frame transfer station 216 includes a main frame transfer robot 242. The main frame transfer robot 242 preferably includes a plurality of separate robot arms 2 "to Provides independent access to the substrates in process station 218 and SRD station 212. As shown in Figure 3, the main frame transfer robot 242 contains two robot arms 244, which is equivalent to the processing room 24 of each process station 218. Number. Each robot arm 244 includes a mechanical blade 246 to carry the substrate during substrate transfer. Each robot arm 244 is preferably capable of operating independently to transfer substrates in the system. In addition, the robot arm 244 can also operate in a coordinated manner. When one robotic arm is extended, the other robotic arm is retracted. The king frame transfer station 216 includes a web-shaped control device 248. The web-shaped control device helps the main frame to transfer the substrate on the mechanical blade of the robotic arm 242 from the side to the side. Turn up into the process chamber 24. Face down to complete the substrate face down process. The web control device 248 includes a main body 250 to provide vertical and rotational displacement relative to the vertical axis of the main f 豊 250, 1 squat The robotic arm 252 provides a rotation position along the horizontal axis of the web-shaped robotic arm milk ----------- installation -------- order --------- ( (Please read the notes on the back before filling out this page) 5 pages of this paper & Applicable standard for reading the mounds (CNS) A4 χ 297 public meal _ 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Moved. One is located at the end of the squatting robotic arm 252 The vacuum claw 254 can be grasped when the substrate is turned over and the web-shaped control device 2 4 8 transmits its soil. Web-shaped control: Place the substrate 234 into the process chamber 24 " for the face-down process. Details will be discussed below. Figure 24 is a top view of the main frame transfer robot with a web control. The main frame transfer robot 242 shown in FIG. 24 provides the transfer of substrates between different stations of the main frame station, including the process station and the SRD station. The main structure transmission robot arm m includes two robot arms 24 ° 2 'as shown in the figure, and a web-shaped control device 2404 attached to the end of the robot arm 2402. The web-shaped control device is a conventionally known mechanical arm that can be attached to the end as a carrier substrate. For example, the RR701 model can be located in Milpitas, such as ...
Automation,Uc•取得。具有蹼狀控制裝置末端之主架 傳送機械手t 242可在附於主架構之不同站之間傳送基 板,而且翻轉基板以傳送到所需的表面方向,也就是基= 製程表面向下以進行電鏡製程。主架構傳送機械手臂'^ 最好可沿著u-z軸以機械手臂24〇2提供獨立的機械手 臂運動,且以蹼狀控制裝置末端24〇4進行獨立的基板翻 轉。結合了蹼狀控制裝置2404做為主架構傳送機械手臂 的末端之後,由於從主架構傳送機械手臂傳遞基板到蹼狀 控制裝置的步驟可省略,基板的傳送程序因而也可簡化。 第6圖為電鍍製程室4〇〇之截面示意圖。在此圖中之 電鍍製程室400類似於第2和第3圖中所示的電鍍製程室 240之操作。此製程室400 —般包含了頭部組合41〇,= 第26頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐 ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 程室420和電解質溶液收集器44〇。電解質溶液收集器44〇 最好固定在主架構214之本體442上,並位於定義製程室 420之配置位置的開口 443之上。電解質溶液收集器440 包括了内壁446,外壁448和連接壁面之底部447。電解 質溶液出口 449位於電解質溶液收集器440之底部447, 並經由管路、軟管、輸送管、或其它流體傳送管路連接到 電解質溶液補充系統2 2 0,如第2圖中所示。 頭部組合41 0放置於頭部組合支架4 5 2上。頭部組合 支架45 2包括了置放柱454和懸臂樑456。置放柱454放 置在主架構214的本體44 2上,且懸臂樑456由置放柱454 的上半邵分橫向延伸。此置放柱454最好可以在垂直軸向 沿著置放柱轉動位移,如此頭部組合41 0也可以跟著轉 動。頭部組合41〇則裝在位於懸臂樑456末端的置放平板 4 6 0上。懸臂樑4 5 6之另一端則連接到置放柱4 5 4上的懸 臂樑促動器457,如氣壓缸上。懸臂樑促動器457使懸臂 樑456以置放柱454和懸臂樑456之間妁關節處作樞軸運 動。當懸臂樑促動4 5 7收回時,懸臂樑4 5 6將頭部組合41 0 移動遠離製程室420,以提供電鍍室400中移除及/或置換 製程室420所需的空間。當懸臂樑促動器457延伸時,懸 臂樑4 5 6將頭部組合41 0移往製程室4 2 0 ,以便在製程位 置中及頭部組合41 0中放置基板。 頭部組合410 —般包含了基板承載組合450和基板組 合促動器458。基板組合促動器458放在置放平板460之 上,並包括了頭部組合軸462往下延伸穿過置放平板 第27頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------- •裝--------訂---------Φ (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明( 460。頭部組合細、 、 〈下端連接到基板承載組合450上 以、承載組合450放到製程位置和基板負載位置。 基板承載組合450 一般包含了基板承載器464和陰極 接觸=66。第7圖為陰極接觸環之一實施例的截面示意 、又說纟此接觸環466包含了具有複數個導電構件 置於其中的環狀本體。環狀本體由絕緣材質所組成,以便 和其中的複數個導電構件形成電性絕緣。環狀本體和導電 構件整個形成了直徑内部基板座落表面,在製程時則可支 撐基板並提供電流。 現在詳細參閱第7圖,接觸環 一般包含了複數個 導电構件765,其至少邵分位於環絕緣本體之中。所 顯示的絕緣本體770具有一凸緣m及往下傾斜的肩狀部 分m連接到位於凸緣762之下的基板座落表面768。凸 緣762和基板座落表面76δ位於一固定偏移且互相平行的 平面上。因此,可以瞭解到凸緣762定義出第一平面,基 板座落表面768定義出平行於第一平面的第二平面,肩狀 部分764則連接此兩個平面。然而,在第?圖中接觸環的 設計只為其中一個例子。在其它的實施例中,肩狀部分 具有陡降的角度,包括垂直於凸緣762和基板座落表面 768的垂直角度。另外,接觸環466也可為不具有肩狀部 分764的平面。然而,為了下面所要描述的理由,一較佳 實施例包含了第6圖所示的肩狀部分或者其類似的變化。 導電構件765之結構係由複數個外部電性接觸墊 環狀放置於凸緣7 6 2上,複數個内部電性接觸塾7 7 2放置 第28頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) --------^--------- <請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明( 於部分基板座落表面768上,和複數個嵌入的導電連接部 刀776以連接電性接觸整772, 78〇。導電構件765各由絕 緣本體770產生電性絕緣。絕緣本體則由膠材料如聚偏二 氟乙婦(PVDF),過氟烷氧基化合物(PFA),TEFLON®(為 Ε·Ι. duPont de Nemoirs Company of Wilmington, DE·之註 冊商標),和TefzelTM,或其它絕緣材料如氧化鋁(Ai2〇3) 和其i陶瓷;材料等所製成。在製程時,外部接觸蟄7 8 〇係 隸接到電源供應(未顯示)以經過連接部分776傳送電流和 電壓到内部接觸墊772。接著内部接觸墊772供應電流和 電壓到基板上並維持基板周圍部分的接觸。因此,在操作 時此導電構件7 6 5如同一分離的電流路徑以電性連接到基 板上。 低電阻率,或者相反的說具高導電率,均直接與良好 的電鍍有關。為了確保低電阻率,導電構件765最好由銅 (Cu)、鉑(Pt)、妲(Ta)、鈦(Ti)、金(Au)、銀(Ag)、不銹鋼 或其它導電材料所製成。低電阻率和低接觸阻抗也可將導 電構件765鍍上一層導電材料來達成。因此,導電構件765 可以由例如銅所製成,銅的電阻率約為2χ1〇-8Ω .m,並且 鍍上一層鉑,鉑的電阻率則約為1〇.6χ1〇·8 Ω .m。也可以在 導電基底材料如不銹鋼、4目(Mo)、銅和欽之上鏡上一層氮 化is (TaN)、氮化鈦(TiN)、铑(Rh)、金銅或銀。再者,由 於接觸墊772,780分別連接到導電連接部分776上,接 觸塾772,780可為一種材料,如銅,而導電構件765則 為另一種材料,如不銹鋼。接觸墊772,7 80和導電連接 第29頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) ......................、可......... (請先閲讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明() 部分776均可分別或同時鍍上一層導電材料。另外,由於 電鍍的重覆性可能因氧化作用而有不良影響(如同一絕緣 材質),内部接觸墊772最好包含可抗氧化的材料如鉑、 银、或金。 除了接觸材料的作用之外,每個電路的全部阻抗並和 内部接觸墊772的幾何形狀和接觸環446所供應的力量有 關。這些因素定義了内部接觸墊772和基板座落表面768 之界面由於兩個表面間的粗糙而產生的壓縮阻抗rcr。一 般說來,當所加的力量增加時外觀面積也會增加。然而外 觀面積將反比於Rcr,所以外觀面積的增加產生了 rcr的 降低。因此,為了降低整個阻抗最好將力量加到最大。在 操作時所加的最大力量將被基板的降伏力量所限制,此力 量則可能使基板因太大的力量和壓力而損壞。然而,由於 壓力和力量及面積兩者有關,最大可承受力量也和内部接 觸塾7 7 2的幾何形狀有關。因此,如第7圖中所示的接觸 塾772雖為水平上半表面,也可使用其它具優點的形狀。 例如第8和第9圖中所示的兩種較佳形狀。第8圖顯示了 如刀鋒邊緣之接觸墊,而第9圖則顯示了半球狀接觸塾。 熟知此項技術的人將可以很容易的知道其它有利的形 狀。對於接觸幾何形狀、力量、和阻抗之間關係的完整討 論可由 Ney Contact Manual,by Kenneth E. Pitney,The J· M. Ney Company, 1 973所獲得,在此將整份文件列為參考 文獻。 連接部分776的數目可因接觸塾772之特殊數目而改 第30頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) " ' --------訂 (請先閲讀背面之注意事項再填寫本頁} 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 變,如第7圖中顯示所需要的。對於2〇〇mm的基板來說, 最好有至少二十四個連接部分?76平均分配在整個36〇 。然而,當連接部分的數目到達一臨界值時,基板對接 觸環4 6 6的依順度卻有不利的影響。因此,雖然可以使用 超過二十四個連接部分776,由於接觸墊772和基板之堅 硬度所產生的外形影響,接觸均勻性終究會減低。相類似 地’雖然也可使用小於二十四個連接部分776,但如此電 >見將會逐漸限制及區域化,因而產生了不佳的電鍍效果。 由於製程室的尺寸可以容易的改變以適合特殊應用,例如 一 300mm的基板,最佳的數目可以容易地變化尺度和實施 例來加以決定。 如第10圖中所示的,基板座落表面768包含一獨立 的襯塾7 8 2。此獨立襯塾放置於絕緣本體7 7 0上且以直徑 方向往内延伸到内部接觸墊7 7 2以定義出接觸環4 6 6的内 部直徑。此獨立襯墊7 8 2最好稍微延伸到内部接觸塾7 7 2 之上,例如幾個mi 1,且最好包含例如VITON®(E. I. duPont de Memoirs and Company of Wilmington, DE 之註冊商 標)、TEFLON®、丁納橡膠和類似材料等彈性體。其中絕緣 本體770也包含了和獨立襯墊782相同材料之彈性體。在 稍後的實施例中,獨立襯整7 8 2和絕緣本體7 7 0具整體 性,也就是以單塊所組成。然而,此獨立襯墊7 8 2最好可 和絕緣本體7 7 0分開以便較容易進行移除更換或清潔之 用。 第1 0圖中所顯示的為獨立襯墊7 8 2之較佳實施例, 第31頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------•裝--------訂---------Φ (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 其中獨立襯墊完全座落在絕緣本體770之上,第8和第9 圖則顯示不同的貫施例。在後面的實施例中,絕緣本體γ 7 〇 係部分以機械加工而曝露出連接部分7 7 6的上半表面,且 獨立襯墊782置放其中。因而獨立襯墊782將接觸部分的 連接部分7 7 6。此設計使得内部接觸墊7 7 2可使用較少的 材料,這對包含有金之内部接觸墊7 7 2來說材料的節省相 當顯著,因此也較為有利。 在製程時,獨立襯墊782持續和基板電鍍表面之周邊 部分接觸’並且加以壓縮以提供其餘的陰極接觸環4 6 6和 基板之間的密封作用。此密封作用可避免電解質溶液接觸 到基板的邊緣和背面。如同上面所要注意的,為了得到高 電鍍重覆性,維持乾淨的接觸表面是必要的。先前的接觸 環設計由於其接觸表面外形經過一段時間後會產生變 化,並不能提供一致性的電鍍結果。此接觸環會消除,或 者實際上會減低聚集在内部接觸墊7 7 2上的沉積物,且改 變其特性而產生基板電鍍表面上具高重覆性、一致性、及 均均性的電鍍結果。 第11圖所顯示的為接觸環4 6 6之可能的電路結構簡 化圖。為了在導電構件7 6 5之間提供均句的電流分布,外 部電阻器700乃和每個導電構件765串聯連接。此外部電 阻器70 0 (以Rg;XT表示)之電阻值大小最好比電路中其它元 件的阻值要大。如第11圖中所示的,經過每個導電構件 765之電路以串聯到電源供應器702之每個元件的電阻值 加以表示。RE代表電解質溶液之電阻值,其特性和陽極與 第32頁 -----------·裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 ----------丨丨裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) A7 —----^_5Z_----- 五、發明說明() 陰極接觸%之間的距離及電解質溶液之化學組成都有關 係。因此,RA代表電解質溶液鄰近基板電鍍表面754之電 阻值。RS代表基板電鍍表面754之電阻值,且Rc代表陰極 導電構件765之電阻值加上内部接觸塾772和基板電艘層 7 5 4之間界面所產生的壓縮電阻值。一般說來,外部電阻 器REXT足電阻值至少要大到ΣΙ?,而ΣΙ?等於Re、Ra、Rs和 Rc 4總和。最好此外部電阻器Rext之電阻值要遠大於, 因此Σβ可加以忽略且每個申聯電路之電阻值約為bn。 典型地,電源功率器連接到陰極接觸環466之所有外 部接觸整780,產生了經由内部接觸墊772之平行電路。 然而,由於内部接觸墊到基板界面電阻值因每個内部接觸 墊ί 72而變化,更多的電流將流過最低電阻值的部分,產 生更户的電鍍效果。然而,如果在每個導電構件7 6 5串聯 一外部電阻器,則通過每個導電構件765之電流的數量或 數值變成主要由外部電阻器之電阻值加以控制。結果,在 每個内部接觸墊772之間的電性特性變化並不會影響基板 上的電流分佈。加到電鍍表面之均勾電流密度使得基板種 子層上足金屬層沉積產生均勻的電鍍厚度。外部電阻器也 在製程順序的不同基板之間提供了均勻的電流分佈。 雖然接觸環466的設計可抵抗沉積物聚集在内部接觸 墊772上,在多次的基板電鍍循環之後基板-墊界面之阻 抗可能會增加,終究達到無法接受的數值。一電子感測器 /警報器704可跨過外部電阻器7〇〇和其連接以監視經過 此外部電阻器的電壓/電流而解決此問題。假如經過外部 第33頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐y ----- 519677 經濟部智慧財產局員工消費合作社印製 A? ______B7_ 五、發明說明() 電阻器70 0之電壓/電流落到預設操作範圍之外,代表很 高的基板-墊阻抗值,則感測器/警報器7 0 4會觸發修正措 施如關閉電鍍製程直到問題經操作員解決為止。另外,分 離的電源供應器可連接到每個導電構件7 6 5並加以分別控 制和監視,以提供基板均勻的電流分佈。也可使用一極度 自動化系統(VSS)來調節電流。VSS —般包含了處理單元並 組合工業上常用的元件如可變電阻器、分離的電源供應 器、等等來供應及/或控制電流。當内部接觸墊772之物 理化學特性,也就是電流,經過一段時間而變化時,vss 會將回饋的資料加以處理和分析。此資料將和預先設定點 加以比較’接著vss改變電流和電壓到適當值以確保均勻 的沉積特性。 第1 8圖為陰極接觸環之另一實施例的透視圖。在第 18圖中所示的陰極接觸環ι8〇〇包含一導電金屬或金屬合 金,例如不銹鋼、銅、銀、金、鉑、鈦、鋰、和其它導電 材料,或者為導電材料之組合,例如不銹鋼材質鍵上一層 鉑金屬。此陰極接觸環1 8 〇 〇包括了上面的置放部分丨81 〇 以將陰極接觸環裝在基板承載座組合上及下面的基板接 收部分1 820用以在其中接收基板。此基板接收部分182〇 包括了環狀基板座落表面1 822,其上具有複數個接觸墊或 凸塊1 824且間隔一致。當基板放置於此基板座落表面 1 822上時,接觸墊1 824實際和基板之周圍區域接觸以提 供和基板沉積表面上欲電鍍之種子層的電性接觸。此接觸 土 1 8 2 4可鍍上層貴金屬如鉑或金以抵抗氧化作用。 第34耳 -----------•裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 除了接觸基板之接觸墊表面之外,陰極接觸環之曝露 表面最好處理以提供親水性表面,或者鍍上一層材料而成 為親水特性。親水材料和親水性表面處理均為習知的技 術。其中一個可提供親水性表面處理的公司為M i 1 1 i p〇reAutomation, Uc • Acquired. The main frame transfer robot t 242 with the end of the web-shaped control device can transfer the substrate between different stations attached to the main structure, and flip the substrate to transfer to the required surface direction, that is, base = process surface down for Electron microscope process. The main frame transfer robot arm is best to provide independent robot arm movement along the u-z axis with the robot arm 2402, and independent substrate turning with the web-shaped control device end 2404. After combining the web-shaped control device 2404 as the end of the main-frame transfer robot, the steps of transferring the substrate from the main-frame transfer robot to the web-shaped control device can be omitted, and the substrate transfer process can be simplified. FIG. 6 is a schematic cross-sectional view of the electroplating process chamber 400. The plating process chamber 400 in this figure operates similarly to the plating process chamber 240 shown in Figures 2 and 3. This process room 400 generally includes a head assembly 41〇, = page 26 This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 public meals ^ -------- ^ ---- ----- (Please read the precautions on the back before filling this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description () Process chamber 420 and electrolyte solution collector 44〇. Electrolyte solution The collector 44 is preferably fixed on the body 442 of the main frame 214 and is located above the opening 443 defining the configuration position of the process chamber 420. The electrolyte solution collector 440 includes an inner wall 446, an outer wall 448, and a bottom portion 447 connecting the wall surfaces. The electrolyte solution outlet 449 is located at the bottom 447 of the electrolyte solution collector 440, and is connected to the electrolyte solution replenishing system 2 2 0 through a pipe, a hose, a delivery pipe, or other fluid transfer pipeline, as shown in Fig. 2. Head The assembly 41 0 is placed on the head assembly bracket 4 5 2. The head assembly bracket 45 2 includes a placement column 454 and a cantilever beam 456. The placement column 454 is placed on the body 44 2 of the main frame 214, and the cantilever beam 456 by the upper half of the placement column 454 horizontal The placement column 454 can preferably be rotated and displaced along the placement column in the vertical axis direction, so that the head assembly 41 0 can also be rotated. The head assembly 41 0 is installed on the placement plate at the end of the cantilever beam 456 4 6 0. The other end of the cantilever beam 4 56 is connected to the cantilever actuator 457 on the placement column 4 5 4 such as a pneumatic cylinder. The cantilever actuator 457 causes the cantilever beam 456 to place the column The sacroiliac joint is pivoted between 454 and the cantilever beam 456. When the cantilever beam is actuated 4 5 7 to retract, the cantilever beam 4 5 6 moves the head assembly 41 0 away from the process chamber 420 to provide the electroplating chamber 400 to the center Remove and / or replace the space required by the process chamber 420. When the cantilever actuator 457 is extended, the cantilever beam 4 5 6 moves the head assembly 4 0 to the process chamber 4 2 0 to allow for the head in the process position The substrate is placed in the combination 41 0. The head combination 410 generally includes a substrate carrying combination 450 and a substrate combination actuator 458. The substrate combination actuator 458 is placed on the placement plate 460 and includes a head combination shaft 462 Extending down through the placement plate, page 27. This paper is sized for the Chinese National Standard (CNS) A4 (210 X 297 mm) ---------- • Installation -------- Order --------- Φ (Please read the precautions on the back before filling this page) 519677 A7 B7 V. Description of the invention (460. The head assembly is thin, and the lower end is connected to the substrate carrier assembly 450, and the carrier assembly 450 is placed at the process position and the substrate load position. The substrate carrier assembly 450 generally includes a substrate carrier 464 and Cathode contact = 66. FIG. 7 is a schematic cross-sectional view of one embodiment of a cathode contact ring. It is also said that the contact ring 466 includes a ring-shaped body having a plurality of conductive members placed therein. The ring body is made of insulating material so as to form electrical insulation with a plurality of conductive members therein. The ring-shaped body and the conductive member form the entire diameter of the inner substrate seating surface, which can support the substrate and provide current during the manufacturing process. Referring now to FIG. 7 in detail, the contact ring generally includes a plurality of conductive members 765, which are at least located in the ring insulating body. The illustrated insulating body 770 has a flange m and a shoulder portion m inclined downwardly connected to a substrate seating surface 768 located below the flange 762. The flange 762 and the substrate seating surface 76δ are located on a plane that is fixedly offset and parallel to each other. Therefore, it can be understood that the flange 762 defines a first plane, the base plate seating surface 768 defines a second plane parallel to the first plane, and the shoulder portion 764 connects the two planes. However, in the first? The design of the contact ring in the figure is just one example. In other embodiments, the shoulder portion has a steep angle, including a vertical angle perpendicular to the flange 762 and the substrate seating surface 768. Alternatively, the contact ring 466 may be a flat surface without the shoulder portion 764. However, for reasons described below, a preferred embodiment includes a shoulder-like portion as shown in Fig. 6 or a similar variation. The structure of the conductive member 765 consists of a plurality of external electrical contact pads placed in a ring on the flange 7 6 2 and a plurality of internal electrical contacts 塾 7 7 2 placed on page 28. This paper applies the Chinese National Standard (CNS) A4 Specifications (210 X 297 public love) -------- ^ --------- < Please read the precautions on the back before filling out this page) 519677 A7 B7 Employees ’Intellectual Property Bureau, Ministry of Economic Affairs Consumption Cooperative printed 5. Description of the invention (on part of the substrate seating surface 768, and a plurality of embedded conductive connection blades 776 are used to connect electrical contacts 772, 78. The conductive members 765 are each electrically insulated by the insulating body 770 The insulating body is made of rubber materials such as polyvinylidene difluoride (PVDF), perfluoroalkoxy compounds (PFA), TEFLON® (registered trademark of E.I. duPont de Nemoirs Company of Wilmington, DE ·), And TefzelTM, or other insulating materials such as aluminum oxide (Ai203) and its ceramics; materials, etc. During the manufacturing process, external contacts 蛰 7 8 〇 are connected to a power supply (not shown) to pass through the connection part 776 transmits current and voltage to the internal contact pad 772. Then the internal contact pad 77 2 Supply current and voltage to the substrate and maintain contact with the surrounding parts of the substrate. Therefore, the conductive member 7 6 5 is electrically connected to the substrate as a separate current path during operation. Low resistivity, or vice versa High conductivity is directly related to good plating. In order to ensure low resistivity, the conductive member 765 is preferably made of copper (Cu), platinum (Pt), hafnium (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, or other conductive materials. Low resistivity and low contact resistance can also be achieved by plating the conductive member 765 with a layer of conductive material. Therefore, the conductive member 765 can be made of, for example, copper. The rate is about 2 × 10-8Ω.m, and a layer of platinum is plated, and the resistivity of platinum is about 10.6 × 10 · 8 Ω.m. It can also be used in conductive substrate materials such as stainless steel, 4 mesh (Mo), copper A layer of nitride (TaN), titanium nitride (TiN), rhodium (Rh), gold, copper, or silver is formed on the mirror of He Qin. Furthermore, since the contact pads 772 and 780 are connected to the conductive connection portion 776, respectively, contact 塾772,780 may be one material, such as copper, while conductive members 765 are another Materials such as stainless steel. Contact pads 772, 7 80 and conductive connections. Page 29 This paper is sized for China National Standard (CNS) A4 (210X 297 mm) ............... ....... 、 Can ......... (Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description () The portions 776 can be plated with a conductive material separately or simultaneously. In addition, since the repeatability of the plating may be adversely affected by oxidation (such as the same insulating material), the internal contact pad 772 preferably contains an oxidation-resistant material such as platinum, silver, or gold. In addition to the effect of the contact material, the overall impedance of each circuit is related to the geometry of the internal contact pads 772 and the force supplied by the contact ring 446. These factors define the compression resistance rcr generated by the interface between the internal contact pad 772 and the substrate seating surface 768 due to the roughness between the two surfaces. In general, the appearance area increases as the applied force increases. However, the apparent area will be inversely proportional to Rcr, so an increase in the apparent area results in a decrease in rcr. Therefore, it is best to maximize the force in order to reduce the overall impedance. The maximum force applied during operation will be limited by the undulating force of the substrate. This force may cause the substrate to be damaged by too much force and pressure. However, since pressure is related to both force and area, the maximum tolerable force is also related to the geometry of the internal contact 7 7 2. Therefore, although the contact 塾 772 shown in FIG. 7 is a horizontal upper surface, other advantageous shapes may be used. For example, two preferred shapes shown in Figs. 8 and 9 are shown. Figure 8 shows contact pads such as blade edges, and Figure 9 shows hemispherical contact pads. Those skilled in the art will readily know other advantageous shapes. A complete discussion of the relationship between contact geometry, force, and impedance can be obtained from the Ney Contact Manual, by Kenneth E. Pitney, The J.M. Ney Company, 1 973, and the entire document is incorporated herein by reference. The number of connecting parts 776 can be changed due to the special number of 塾 772 contacts. Page 30 This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) " '-------- Order (please Read the precautions on the back before filling in this page} 519677 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Changes, as shown in Figure 7. For 200mm substrates Say, it is better to have at least twenty-four connection parts? 76 is evenly distributed throughout 36. However, when the number of connection parts reaches a critical value, the compliance of the substrate to the contact ring 4 6 6 is adversely affected. Therefore, although more than twenty-four connection portions 776 can be used, the uniformity of the contact will eventually be reduced due to the external shape of the contact pad 772 and the rigidity of the substrate. Similarly, although less than twenty-four can be used The connection part 776, but the electricity will gradually be limited and regionalized, resulting in a poor plating effect. Because the size of the process chamber can be easily changed to suit special applications, such as a 300mm substrate, the best The number can be easily determined by varying the scale and the embodiment. As shown in FIG. 10, the substrate seating surface 768 includes an independent liner 7 8 2. This independent liner is placed on the insulating body 7 7 0 and Extend inwardly to the inner contact pad 7 7 2 to define the inner diameter of the contact ring 4 6 6. This independent pad 7 8 2 preferably extends slightly above the inner contact 塾 7 7 2, for example several mi 1, and preferably contains elastomers such as VITON® (registered trademark of EI duPont de Memoirs and Company of Wilmington, DE), TEFLON®, butadiene rubber, and similar materials. The insulating body 770 also includes a separate gasket 782 Elastomers of the same material. In a later embodiment, the individual lining 7 8 2 and the insulating body 7 7 0 are integrated, that is, composed of a single piece. However, the independent pad 7 8 2 is preferably Separate from the insulating body 7 7 0 for easier removal, replacement or cleaning. The figure 10 shows a preferred embodiment of the independent pad 7 8 2, page 31. This paper size applies Chinese national standards (CNS) A4 size (210 X 297 mm) ----- ------- • Equipment -------- Order --------- Φ (Please read the precautions on the back before filling out this page) 519677 Employees' Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed A7 B7 5. Description of the invention () The independent gasket is completely seated on the insulating body 770, and Figures 8 and 9 show different embodiments. In the following embodiments, the insulating body γ 7 〇 The upper part of the connecting part 7 7 6 is exposed by machining, and the independent pad 782 is placed therein. Thus, the independent pad 782 will contact the connecting portion 7 7 6 of the portion. This design allows less material to be used for the internal contact pads 7 7 2, which is quite significant for the internal contact pads 7 7 2 that contain gold and is therefore more advantageous. During the manufacturing process, the independent pad 782 is in continuous contact with the peripheral portion of the plated surface of the substrate 'and is compressed to provide a sealing effect between the remaining cathode contact ring 4 6 6 and the substrate. This sealing prevents the electrolyte solution from contacting the edges and back of the substrate. As noted above, in order to obtain high plating repeatability, it is necessary to maintain a clean contact surface. Previous contact ring designs did not provide consistent plating results due to changes in the shape of their contact surfaces over time. This contact ring will eliminate, or actually reduce, the deposits accumulated on the internal contact pad 7 7 2 and change its characteristics to produce a highly repeatable, uniform, and uniform plating result on the substrate plating surface. . Figure 11 shows a simplified diagram of the possible circuit structure of the contact ring 4 6 6. To provide a uniform current distribution between the conductive members 7 65, an external resistor 700 is connected in series with each conductive member 765. The resistance of the external resistor 70 0 (expressed as Rg; XT) is better than the resistance of other components in the circuit. As shown in Fig. 11, the circuit passing through each conductive member 765 is represented by the resistance value of each element connected in series to the power supply 702. RE stands for the resistance value of the electrolyte solution, its characteristics and anode and page 32 ----------- · equipment -------- order --------- (please first (Read the notes on the back and fill out this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ---------- 丨 丨 Installation -------- Order ----------- -(Please read the notes on the back before filling out this page) A7 —---- ^ _ 5Z _----- 5. Description of the invention () The distance between the cathode contact% and the chemical composition of the electrolyte solution are related . Therefore, RA represents the resistance value of the electrolyte solution adjacent to the plated surface 754 of the substrate. RS represents the resistance value of the plating surface 754 of the substrate, and Rc represents the resistance value of the cathode conductive member 765 plus the compressive resistance value generated at the interface between the internal contact 塾 772 and the substrate electrode layer 754. Generally speaking, the resistance value of the external resistor REXT should be at least as large as ΣΙ ?, and ΣΙ? Is equal to the sum of Re, Ra, Rs, and Rc 4. It is better that the resistance value of this external resistor Rext is much larger than that, so Σβ can be ignored and the resistance value of each application circuit is about bn. Typically, the power amplifier is connected to all external contacts 780 of the cathode contact ring 466, creating a parallel circuit via internal contact pads 772. However, because the internal contact pad-to-substrate interface resistance value changes for each internal contact pad 72, more current will flow through the portion of the lowest resistance value, resulting in a more effective plating effect. However, if an external resistor is connected in series to each conductive member 7 65, the amount or value of the current passing through each conductive member 765 becomes controlled mainly by the resistance value of the external resistor. As a result, the change in electrical characteristics between each of the internal contact pads 772 does not affect the current distribution on the substrate. The average hook current density added to the plating surface enables the deposition of a sufficient metal layer on the substrate seed layer to produce a uniform plating thickness. External resistors also provide uniform current distribution between different substrates in the process sequence. Although the contact ring 466 is designed to resist the accumulation of deposits on the internal contact pads 772, the substrate-pad interface resistance may increase after multiple substrate plating cycles, eventually reaching unacceptable values. An electronic sensor / alarm 704 can overcome this problem by crossing the external resistor 700 and its connection to monitor the voltage / current through the external resistor. If the external paper on page 33 applies the Chinese National Standard (CNS) A4 specification (210 X 297 public meals y ----- 519677 printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A? ______B7_ V. Description of the invention () The voltage / current of the resistor 70 0 falls outside the preset operating range, which represents a very high substrate-pad impedance value. The sensor / alarm 7 0 4 will trigger corrective measures such as shutting down the plating process until the problem is detected by the operator. Until the solution. In addition, a separate power supply can be connected to each conductive member 7 65 and separately controlled and monitored to provide a uniform current distribution on the substrate. A highly automated system (VSS) can also be used to regulate the current. VSS -Generally includes a processing unit and combines components commonly used in the industry such as variable resistors, separate power supplies, etc. to supply and / or control current. When the physical and chemical characteristics of the internal contact pad 772, that is, the current, passes through When it changes over time, vss will process and analyze the feedback data. This data will be compared with the preset point. Then the vss will change the current and voltage to appropriate Value to ensure uniform deposition characteristics. Figure 18 is a perspective view of another embodiment of a cathode contact ring. The cathode contact ring shown in Figure 18 includes a conductive metal or metal alloy such as stainless steel, Copper, silver, gold, platinum, titanium, lithium, and other conductive materials, or a combination of conductive materials, for example, a layer of platinum metal on a stainless steel key. This cathode contact ring 1 800 includes the above placement portion 81 〇The cathode contact ring is mounted on and under the substrate receiving base assembly 1 820 to receive the substrate therein. This substrate receiving part 1820 includes a ring-shaped substrate seating surface 1 822 having a plurality of The contact pads or bumps 1 824 are uniformly spaced. When the substrate is placed on the substrate seating surface 1 822, the contact pads 1 824 actually contact the surrounding area of the substrate to provide electricity to the seed layer to be plated on the substrate deposition surface. Sexual contact. The contact soil 1 8 2 4 can be plated with a precious metal such as platinum or gold to resist oxidation. Ear No. 34 --------------- Installation -------- Order-- ------- (Please read the notes on the back first (Fill in this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Except for the contact pad surface that contacts the substrate, the exposed surface of the cathode contact ring is best treated to provide a hydrophilic surface, or plated The upper layer of material becomes hydrophilic. Hydrophilic materials and hydrophilic surface treatments are conventional techniques. One of the companies that can provide hydrophilic surface treatments is M i 1 1 ip〇re
Corporation,位於 Bedford,Massachusetts。親水性表 面可以有效的降低電解質溶液在陰極接觸環表面上形成 珠狀’並在陰極接觸環由電鍍槽或電解質溶液移出時,使 電解質落液由陰極接觸環平順的流下。由於在陰極接觸環 上提供親水性表面使得電解質溶液更容易移除,則陰極接 觸%上因殘留電解質溶液所產生的電鍍缺陷可以有效的 降低。發明人也可將此親水性表面處理或鍍層的應用方式 加以思考而用於陰極接觸環的其它實施例中,以降低陰極 接觸環上之殘餘電解質溶液的珠狀現象及後續的基板製 程中產生電鍍的缺陷。 參閱第12和12A圖,基板承載座464最好放置於陰 極接觸環466之上並包含一囊狀組合470以供應壓力到基 板背面且確保基板電鍍表面和陰極接觸環466之間的電性 接觸。可膨脹的囊狀組合4 7 0係配置在基板承載座平板 832之上。囊袋836配置於基板承載座平板832之下半表 面’因此係靠近陰極接觸環4 6 6上之接觸點的相反方向, 基板821則置於其間。流體源838供應流體(如氣體或液 體)到囊袋8 3 6中使得囊袋8 3 6膨脹而改變角度。 現在參閱第12、12A和13圖,其中囊狀組合470之 細節將在此加以討論。基板承載座平板832顯示其實際上 第35頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 1— n n a— n (n n a·— ·ϋ n n · 11 n I— n ·1 n / )0- · n ·1_1 nf n I— n n I (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 為碟片形狀’並具有形成於下表面上之環狀凹槽840及置 放在中心的真空埠841。一或多個入口 842形成於基板承 載座平板832中且通向擴大的環狀置放通道843和環狀凹 槽840中。快拆管844耦合流體源838到入口 842以便供 應流體。真空皡841最好接到真空/壓力幫浦系統859以 便選擇性的在基板821的背面供應壓力或產生真空。在第 1 2圖中所顯示的幫浦系統8 5 9包含了 一幫浦8 4 5、一交又 閥847、和一真£嘴射器849,通常稱之為venturi。一具 有優點之真空噴射器可由SMCPneumatics, Inc_, QfCorporation, located in Bedford, Massachusetts. The hydrophilic surface can effectively reduce the formation of beads on the surface of the cathode contact ring by the electrolyte solution, and when the cathode contact ring is removed from the electroplating tank or the electrolyte solution, the electrolyte dripping liquid flows smoothly from the cathode contact ring. Since a hydrophilic surface is provided on the cathode contact ring to make it easier to remove the electrolyte solution, plating defects caused by the residual electrolyte solution on the cathode contact% can be effectively reduced. The inventors can also think about the application of this hydrophilic surface treatment or coating and use it in other embodiments of the cathode contact ring to reduce the bead phenomenon of the residual electrolyte solution on the cathode contact ring and the subsequent substrate production process. Defects in plating. Referring to Figures 12 and 12A, the substrate carrier 464 is preferably placed on the cathode contact ring 466 and includes a capsule-like assembly 470 to supply pressure to the back of the substrate and ensure electrical contact between the substrate plating surface and the cathode contact ring 466 . The expandable sac-like assembly 470 is arranged on the base plate 832 of the substrate. The pouch 836 is disposed on the lower surface of the substrate-bearing plate 832 ', and is therefore in a direction opposite to the contact point on the cathode contact ring 4 66, with the substrate 821 therebetween. The fluid source 838 supplies a fluid (such as a gas or a liquid) to the bladder 8 3 6 to expand the bladder 8 3 6 to change the angle. Referring now to Figures 12, 12A, and 13, the details of the capsular combination 470 are discussed herein. The base plate 832 shows that it is actually on page 35. The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 1— nna— n (nna · — · ϋ nn · 11 n I— n · 1 n /) 0- · n · 1_1 nf n I— nn I (Please read the notes on the back before filling this page) 519677 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economy It has a sheet shape and has an annular groove 840 formed on the lower surface and a vacuum port 841 placed in the center. One or more inlets 842 are formed in the substrate support plate 832 and lead into the enlarged annular placement passage 843 and the annular recess 840. The quick release tube 844 couples a fluid source 838 to the inlet 842 to supply fluid. The vacuum pump 841 is preferably connected to a vacuum / pressure pumping system 859 to selectively apply pressure or generate a vacuum on the back surface of the substrate 821. The pump system 8 5 9 shown in Fig. 12 includes a pump 8 45, a cross valve 847, and a true mouth shooter 849, commonly referred to as venturi. An advantageous vacuum ejector is available from SMCPneumatics, Inc_, Qf
Indianapolis, Indiana獲得。幫浦845可為商業上的壓 縮氣體源且係耦合到軟管8 5 1的一端,軟管8 5 1的另一端 則摘合到真空埠841。軟管851係分成壓力管路853和具 有真空喷射器849之真空管路855。流體由交叉閥847所 控制’其可選擇性的更換幫浦845與壓力管路853和真空 管路855之間的交流。此交叉閥847最好具有一停止(0FF) 的設定使得流體限制在軟管8 5 1的一個方向。位於軟管 8 5 1中的關閉閥8 61則可避免流體由壓力管路8 5 5逆流經 真2喷射器8 4 9。其中的箭頭則表示流體的流動方向。 當流體源8 3 8供應氣體時,其可_合到軟管8 51以排 除不同壓縮氣體供應的需求,也就是繁浦845。再者,不 同的氣體供應和真空幫浦可提供基板背面壓力和真空之 情況。雖然最好可以容許有背面壓力和背面真空兩者,一 簡化實施例則包含一幫浦僅提供背面真空。然而,下面將 會解釋,若在製程時提供背面壓力將可改善沉積之均勻 第36頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公釐) --- -----------^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 性 五、發明說明( 因此,如上面所述包括真空噴射器和交叉閥的配置是 較佳的。 現在參閱第12A和14圖,一實際上為圓形環狀之歧 管846置放於環狀凹槽840中。此歧管846包含一置放軌 道852位於内肩部848和外肩部“ο之間。置放軌道852 可至少部分***環狀置放通道843内。形成於歧管846中 的複數個流體出口 854提供了入口 842和囊袋836之間的 溝通管道。密封墊837(例如〇型環)則位環狀置放通道843 中和入口 842及出口 854對準,並由基板承載座平板832 固定以確保密閉性。傳統的扣件如螺栓(未顯示)則可用來 將歧管846經由配合的螺紋孔(未顯示,形成於歧管846 和基板承載座平板832中)固定到基板承載座平板832。 現在參閱第15圖,其所顯示之囊袋836截面如同延 長的半管狀材料部分並在每個邊緣具有環狀唇形密封墊 856 ,或者如同腫瘤狀.於第12A圖中,唇形密封墊856 乃顯示位於内肩部848和外肩部85〇之上。部分的囊袋836 則由歧管846靠著環形凹槽840壁面壓縮。此歧管的寬度 要稍小於環形凹槽8 4 0大約數個亳米。因此,歧管8 4 6、 囊袋836、和環形凹槽84〇配合形成了流體密封物。為了 避免 >瓦體減少,囊袋836最好包含某些流體不能透過的材 料如矽膠或任何相當的彈性體,其對電解質溶液不起化學 反應並可保持可靠的彈性。其中如第15圖中所示的,一 柔順的覆蓋物857可覆蓋於囊袋836之上,並由黏著劑或 熱接合加以固定。覆蓋物857最好包含例如VITON®,buna -----------裝--------訂---------^9. (請先閱讀背面之注意事項再填寫本頁) 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製Indianapolis, Indiana. Pump 845 may be a commercially available source of compressed gas and is coupled to one end of hose 851, and the other end of hose 851 is closed to vacuum port 841. The hose 851 is divided into a pressure line 853 and a vacuum line 855 having a vacuum ejector 849. The fluid is controlled by a cross valve 847 'which can selectively replace the communication between the pump 845 and the pressure line 853 and the vacuum line 855. The cross valve 847 preferably has a stop (0FF) setting so that the fluid is restricted in one direction of the hose 851. A shut-off valve 8 61 in the hose 8 5 1 prevents the fluid from flowing back through the pressure line 8 5 5 through the true 2 injector 8 4 9. The arrows indicate the direction of fluid flow. When the fluid source 8 3 8 supplies gas, it can be coupled to the hose 8 51 to eliminate the need for different compressed gas supplies, which is Fanpu 845. Furthermore, different gas supplies and vacuum pumps can provide pressure and vacuum conditions on the back of the substrate. Although it is desirable to allow both back pressure and back vacuum, a simplified embodiment includes a pump that provides only back vacuum. However, it will be explained below that if the back pressure is provided during the manufacturing process, the uniformity of the deposition will be improved. Page 36 This paper size applies the Chinese National Standard (CNS) A4 specification (210x 297 mm) --- ------ ----- ^ -------- ^ --------- (Please read the notes on the back before filling out this page) 519677 A7 B7 Property 5. Description of the invention (So, as above The arrangement including the vacuum ejector and the cross valve is preferred. Referring now to Figures 12A and 14, a substantially circular annular manifold 846 is placed in the annular groove 840. This manifold 846 A placement track 852 is included between the inner shoulder 848 and the outer shoulder "ο. The placement track 852 can be inserted at least partially into the annular placement channel 843. A plurality of fluid outlets 854 formed in the manifold 846 provide The communication channel between the inlet 842 and the pouch 836. A gasket 837 (such as an O-ring) is positioned in the annular placement channel 843 and aligned with the inlet 842 and the outlet 854, and is fixed by the substrate bearing plate 832 to ensure tightness. Traditional fasteners such as bolts (not shown) can be used to pass the manifold 846 through mating threaded holes (not shown, formed in Tube 846 and the substrate carrier plate 832) are fixed to the substrate carrier plate 832. Referring now to Figure 15, the pouch 836 is shown in section like an extended semi-tubular material and has a ring-shaped lip seal on each edge Pad 856, or tumor-like. In Figure 12A, the lip seal 856 is shown above the inner shoulder 848 and the outer shoulder 85. Part of the pouch 836 rests on the annular groove by the manifold 846 The wall of 840 is compressed. The width of this manifold is slightly smaller than the annular groove 8 4 0 by several meters. Therefore, the manifold 8 4 6, the bladder 836 and the annular groove 84 0 cooperate to form a fluid seal. To avoid > reduction of tile body, the bladder 836 preferably contains certain fluid impermeable materials such as silicone or any equivalent elastomer, which does not chemically react with the electrolyte solution and maintain reliable elasticity. Among them is shown in Figure 15 As shown, a compliant cover 857 may be placed over the pouch 836 and secured by adhesive or thermal bonding. The cover 857 preferably contains, for example, VITON®, buna ---------- -Install -------- Order --------- ^ 9. (Please read the note on the back first Items and then Complete this page) Ministry of Economy wisdom property office employees consumer cooperatives PRINTED
519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 橡膠或類似的彈性體,並由例如KEVLAR®加以強化(此為 E. I. duPont de Nemoirs and Company of Wilmington, DE 之註冊商標)。於一實施例中,覆蓋物8 5 7和囊袋8 3 6包 含了相同之材料。覆蓋物857具有特殊應用,其中囊袋836 容易破裂。另外,囊袋836的厚度可以在製造時就增加以 減低穿孔的可能性。囊袋8 3 6的曝露表面如果未經覆蓋, 則其和覆蓋物8 5 7之曝露表面最好加上鍍層或處理以提供 親水性表面,如同上面所討論的陰極接觸環之表面。此鍍 層可促使頭部組合在移除製程室時使殘餘的電解質溶液 容易滴下並移除。 依照特定的應用可以改變明確的入口 8 4 2和出口 8 5 4 的數目。例如’雖然第1 2圖顯示兩個入口對應到相同的 出口,另一個實施例則只應用單一流體入口以供應流體到 囊袋836。 於操作時,基板821導入容器本體802並固定到基板 承載座平板8 3 2的下半面。此係由幫浦系統1 5 9經接口 8 41 來抽掉基板821和基板承載座平板832之間的空氣以產真 空狀態而固定完成。囊袋836接著由流體源838供應例如 氣體或水等流體到入口 842而膨服起來。此流體經由歧管 出口 854傳送到囊袋836中,因而均勻的壓迫基板821到 陰極接觸環4 6 6之接觸點。電鍍製程接著開始。然後電解 質溶液灌注到製程室420中並朝向基板821 ,因而接觸曝 露之基板電鍍表面820。電源供應器經陰極接觸環466提 供負向偏壓到基板電鍍表面820。當電解質溶液流到基板 第38頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 電鍍表面820時,電解質溶液中 ^ _ 從T的離子會被表面820吸引 並沉積到表面820上形成所需的薄膜鍍層。 由於囊袋836的變化彈性,其 、〃周即基板背面之粗糙 程度和陰極接觸環46 6之接觸點•土一 1 土 知觸點以減輕和傳導性陰極接觸 環466不對準的情沉。此彈性 表:衣8db可在基板821的 背面周圍部分建立起流體密封f 在訂$衣以避免電解質溶液污染 到基板821的背面〇 —曰装膨he » ^ 一具馬脹起來,均勻的壓力會往下519677 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Rubber or similar elastomers and reinforced by, for example, KEVLAR® (this is a registered trademark of EI duPont de Nemoirs and Company of Wilmington, DE) . In one embodiment, the cover 8 5 7 and the pouch 8 3 6 contain the same material. The cover 857 has a special application in which the pouch 836 is prone to rupture. In addition, the thickness of the pouch 836 can be increased during manufacture to reduce the possibility of perforation. If the exposed surface of the pouch 8 3 6 is uncovered, it is best to add plating or treatment to the exposed surface of the cover 8 5 7 to provide a hydrophilic surface, such as the surface of the cathode contact ring discussed above. This coating facilitates the removal of the residual electrolyte solution and removal of the head assembly when the process chamber is removed. The number of specific inlets 8 4 2 and outlets 8 5 4 can be changed depending on the particular application. For example, although Figure 12 shows that two inlets correspond to the same outlet, another embodiment uses only a single fluid inlet to supply fluid to the bladder 836. In operation, the substrate 821 is introduced into the container body 802 and fixed to the lower half of the substrate-bearing plate 8 32. This system is fixed by pumping the air between the base plate 821 and the base plate 832 of the base plate 821 through the interface 8 41 by the pump system 1 9. The bladder 836 is then inflated by a fluid source 838 supplied with a fluid such as gas or water to the inlet 842. This fluid is transferred into the bladder 836 via the manifold outlet 854, thereby uniformly pressing the substrate 821 to the contact point of the cathode contact ring 4 6 6. The plating process then begins. The electrolytic solution is then poured into the process chamber 420 and faces the substrate 821, thereby contacting the exposed substrate plating surface 820. The power supply provides negative bias to the substrate plating surface 820 via the cathode contact ring 466. When the electrolyte solution flows to the substrate, page 38, this paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------- installation -------- order- -------- (Please read the precautions on the back before filling out this page) 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs V. Description of the invention () When plating surface 820, electrolyte solution ^ _ from The ions of T will be attracted by the surface 820 and deposited on the surface 820 to form a desired thin film coating. Due to the changing elasticity of the pouch 836, its roughness, that is, the roughness of the back surface of the substrate and the contact points of the cathode contact ring 46 6 are known to reduce the misalignment with the conductive cathode contact ring 466. This elastic watch: 8db of clothing can establish a fluid seal around the back of the substrate 821. Order clothes to prevent the electrolyte solution from contaminating the back of the substrate 821. ----- He swells with a uniform pressure Will go down
傳送到陰極接觸環466以便在其扣δ91 i 1 L 從在暴板821和陰極接觸環466 界面所有接觸點得到實質上相同的力量。此力量可因流體 源838所供應的壓力而變化。再者,囊袋組合47〇之有效 性並不和陰極接觸環466之結構有關。例如,雖然第12 圖顯示其為栓狀結構及複數個不連續的接觸點,此陰極接 觸環466也可為連續的接觸表面。 由於囊袋836傳送到基板821的力量是可變化的,由 接觸% 4 6 6所供應的電流也可加以調整。如上面所描述 的’氧化層可能會在陰極接觸環4 6 6之上形成而限制了電 流。然而’增加囊袋8 3 6之壓力可抵消由於氧化而產生的 電流限制。當壓力增加時,具延展性的氧化層會更妥協而 使得陰極接觸環4 6 6和基板8 2 1之間的接觸變得更好。此 容量之囊袋836的有效性可因陰極接觸環466的幾何形狀 之改變而更加改善。例如,刀鋒邊緣形狀要比圓鈍邊緣或 平坦邊緣更容易穿透氧化層。 另外,由膨脹之囊袋836所提供之流體密封環可讓幫 浦8 4 5在製程之前,製程中或之後選擇性或連續地維持真 第39頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------•裝--------訂---------參 (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 -------- - B7___ _ 五、發明說明() 2或壓力。然而,一般說來,由於囊袋836能夠在製程中 不必持續的作動就可維持背面的真空條件’背浦州只有 在基板傳送到(或傳送出)電鍍製程室4〇〇時才需要作用以 維持真空。因此,當囊袋836如上面所描述的膨服時,背 面f空條件在移除幫浦系統…時才會同時解除,例如, 在交又闕847關閉(〇FF)的選擇位置。移除f浦系統859 可突然的或包含逐漸的使真空條件下滑的製程。下滑可提 供膨脹的囊袋836和同時降低背面真空條件之間的控制交 換。此交換可手動或由電腦加以控制。 如同上面所描述妁,當囊袋δ36膨脹時並不需要連續 的背面抽真空,因為實際上其可能導致基板82〇寶曲或變 形而產生不良的沉積結果。在基板82〇的背面可以提供背 面壓力使基板產生”彎曲狀(b〇wing)„效應而進行製程。當 基板呈弓狀或彎曲時’整個基板可能形成所需的沉積外 觀。因此,t浦系統859可以選擇性的在基板背面提供真 空或壓力的情況。對於一 2〇〇 mm之基板來說,最好可提供 到達5Psi的背面壓力以弯曲此基板。由於基板一般都會 有某種程度的曲折度’相對於電解質溶液之向上流動,背 面壓力使得基Μ曲<呈現凸面狀。弓$之程度則依幫浦 系統8 5 9所供應的壓力而變化。 第12Α圖顯示一較佳的囊袋836具有一表面區域足以 覆蓋基板背面相當小的周圍部分,其直徑則等於陰極接觸 環466。囊袋組合470之幾何構造可加以變化。因此,囊 袋組合可利用流體較無法滲過的材質所構成,以覆蓋基板 第4〇χ 本紙張尺度適用中國國家標準(CNS)A4規格(21〇xlif公爱)--——--- -----------·裝--------訂---------Φ (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明( 8 21增加的表面面積。 第1 9圖為基板承載座組合之另一實施例的部分截面 示意圖。此不同的基板承載座組合19〇〇包含了囊袋組合 470,如同上面所描述的,其具有膨脹性囊袋836接到中 間基板承載座平板1910的背面。一部分的膨脹性囊袋836 最好利用黏著劑或其它接合材料而密封接到中間基板承 載座平板1910的背部表面1912 ^中間基板承載座平板 1910之前表面1914則可調整接收欲進行處理的基板 82卜一彈性〇型環1916則位於中間基板承載座平板丨91〇 之前表面1914上的環形凹槽1918中,用以和基板之背面 周圍部分互相接觸。彈性〇型環1916提供了基板背面和 中間基板承載座平板前表面之間的密封墊。中間基板承載 座平板最好包括了複數個孔洞192〇延伸穿過平板並和真 空埠8 41之流體互相交通。 此複數個孔洞1 920可協助基板承載座利用加到基板 背面的真空吸力將基板固定。依照此基板承載座組合之另 一實施例,膨脹性囊袋並不直接和處理中的基板互相接 觸,因而在基板進行傳送時,此膨脹性囊袋被切割到或損 壞的危險性大大的降低了。彈性〇型環1 9丨6最好鍍層或 處理成親水性表面和基板接觸,如同上面所討論的陰極接 觸環表面。彈性〇型環1 9 1 6可加以替換以確保和基板適 當的接觸和密封性。 第25圖為具有可轉動性之頭部組合241 0的製程頭部 組合之另一實施例。一轉動性促動器位於懸臂樑上並接到 第41頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ' (請先閲讀背面之注意事項再填寫本頁) -·1111111 ·11111111 - 經濟部智慧財產局員工消費合作社印製 519677 A7 B7 五、發明說明() ^員部組合以便在基板製程時轉動頭部組合。此可轉動之頭 部組合2410係設置在頭部组合支架2452上。此不同的頭 邵組合支架2 4 5 2和可轉動之頭部組合2 41 〇係設置在主架 構上並類似第6圖中所示和上面所描述的頭部組合支架 4 5 2和頭邵組合41 0。頭部組合支架2 4 5 2包括了置放柱 2454、柱覆蓋物2455和懸臂樑2456。置放柱2454放在主 架構214的本體上,而柱覆蓋物2455則覆蓋置放柱2454 的頂端部分。置放柱2454最好可提供轉動位移,如箭頭 A1所示的’以相對於置放柱之垂直軸心轉動頭部組合支架 2452。懸臂樑2456由置放柱2454之上半部分橫向延伸並 以樞軸方式在樞軸接頭2459連接到柱覆蓋物2455。可轉 動之頭邵組合2 41 0則接到位於懸臂樑2 4 5 6之末端的置放 滑軌2460上。置放滑軌2460導引頭部組合2410的垂直 運動。頭部上舉促動器2458位於置放滑軌2460的頂端以 提供頭邵組合2 4 1 0的垂直位移。 懸臂樑2 4 5 6之下端係連接到懸臂樑促動器2 4 5 7之軸 心2 4 5 3 ’此促動器為例如氣壓缸或導螺桿促動器,並放在 置放柱2454之上。懸臂樑促動器2457提供了懸臂樑2456 相對於懸臂樑2 4 5 6和柱覆蓋物2 4 5 5之間的接頭2 4 5 9樞 軸運動,如箭頭A2所示。當懸臂樑促動器2457回收時, 懸臂樑2456將頭部組合241〇移到製程室42〇之外。頭部 組合2410的移動提供了所需的空間從電鍍製程室24〇移 除及/或取代製程室420。當懸臂樑促動器2457延伸時, 懸臂樑2 4 5 將頭部組合2 41 0移往製程室4 2 0以便在製程 第42頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) (請先閱讀背面之注意事項再填寫本頁) 裝 tr--------- 經濟部智慧財產局員工消費合作社印製 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 位置中將基板放到頭部組合2 4丨〇中。 可轉動之頭部組合2 4 1 〇包括了轉動促動器2 4 6 4滑動 地和置放滑執2460連接。頭部上舉促動器2458之軸心 2468乃穿過連接到轉動促動器2464之本體的上舉導軌 2 4 6 6。轴心2 4 6 8最好為一導螺桿型式之軸心,以便將上 舉導執2466以箭頭A3所示的方向移動到不同的垂直位 置。轉動促動器2464則經軸心2470連接到基板承載座組 合2 45 0並轉動基板承載座組合2450,如箭頭A4所示。基 板承載座組合2450包括了囊袋組合,如上面第12-15圖 和第1 9圖 < 實施例所描述的,及陰極接觸環,如上面第 7 - 1 0圖和第1 8圖之實施例所描述的。 於電艘製程時將基板轉動一般會加強沉積結果。在電 鍍製程時’頭部組合最好以大約2rp(n和大約2〇rpm之間 的速度轉動。頭部組合也可被轉動。此頭部組合可往下降 以將基板上之種子層和製程室中的電解質溶液互相接 觸。此頭部組合也可往上昇以將基板上之種子層從製程室 中的電解質溶液移除。在頭部組合由製程室舉起之後,為 了加強移除頭部組合上之殘存電解質溶液,此頭部組合最 好以向速旋轉(如大於20rpm)。 於一實施例中,沉積薄膜之均勾度已經改善到2%之 内,也就是說,沉積薄膜厚度最大的偏差約為平均薄膜厚 度的2%,而標準的電鍍製程一般最佳可達到約5·5%之内 的均勻度。然而,頭部組合之轉動在某些例子中並不一定 可以達到均句的電鍍沉積,特別是以調整製程參數而達到 第43頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 Β7 五、發明說明() 均勻電鍍沉積時,例如電解質溶液中的化學品,電解質溶 液流動和其它的參數等。 回頭參閱第6圖,其顯示的為電鍍製程室4〇〇之截面 示意圖,而基板承載座組合450則位於製程室420之上。 製程室420 —般包含了碗狀物430,容器本體472,陽極 組合474和過濾器476。陽極組合474最好置放於容器本 體4 7 2之下且貼附到容器本體4 7 2的下半部,而過濾器4 7 6 則置放於陽極組合474和容器本體472之間。容器本體472 最好為一圓柱形本體並包含電性絕緣的材質,例如陶资、 塑膠、PLEXIGLAS®(丙晞酸)、iexane、pvc、CPVC、和 PVDF。 另外,容器本體472也可由具鍍層的金屬如不銹鋼、鎳和 鈥所製成。具鍍層的金屬係鍍上一層絕緣層,例如 TEFLON®(E. I. du Pont de Nemours and Company of i lmington, DE之註冊商標)、PVDF、塑膠、橡膠和其它 材料之組合,且不會溶解於電解質溶液中。此絕緣層在電 性上和電極呈絕緣狀態,也就是電鍍系統之陽極和陰極。 容器本體472之大小和形狀最好可符合基板電鍍表面和經 由系統所處理之基板的外形,一般為圓形或矩形。容器本 體4 7 2之一較佳實施例包含一圓柱形陶瓷管,其内部直徑 約為基板直徑或稍大。發明人發現在典型的電鍍系統中所 需要的轉動位移中,當容器本體的大小約符合基板電鍍表 面的大小時欲得到均勻的電鍍結果並不需要轉動。 谷器本體472之上半部分徑向往外延伸以形成環狀堪 478。此環狀堰478延伸超過電解質溶液收集器440之内 第Μ頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 Β7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明( 壁446,並讓電解質溶液流入電解質溶液收集器44〇中。 壤狀堪478之上表面最好可和陰極接觸環466之下表面互 相配合。此彡哀狀堰478之上表面最好包括了内部環狀平坦 部分480、中間領斜部分482和外部傾斜部分484。當基 板放置於製程位置中時,基板電鍍表面放置於容器本體 472足圓柱狀開口之上。在陰極接觸環466之下表面和環 形堰478之上表面之間形成一缝隙以讓電解質溶液流過。 陰極接觸裱466之下表面置放於環狀堰478之内部平坦部 分480和中間傾斜部分之上。外部傾斜部分484則往下傾 斜以幫助電解質溶液流入電解質溶液收集器44〇中。 谷器本體472之下半部分放射狀往外延伸以形成下半 部凸緣486以將容器本體472和碗狀物43〇固定在一起。 環狀凸緣486之外部尺寸(圓周)要小於開口 4“之尺寸和 電解質溶液收集器440之内部圓周。此較小尺寸的環狀凸 緣可讓製程室420由電鍍製程室4〇〇中移除和替換。複數 個螺栓488則最好配置在環狀凸緣486之上,透過碗狀物 430上的螺栓孔往下延伸固定。複數個可移動的固定螺帽 490則將製程室420固定在碗狀物43〇上。一種例如彈性 〇型環之密封環487則位於容器本體472和碗狀物43〇之 間和螺栓488的内側以避免製程室42〇之洩露。螺帽/螺 栓的組α可讓製程室4 2 0在維修時快速且容易的移動並替 換零件。 過濾器476最好裝在且完全的覆蓋住容器本體472的 下半開口,且陽極組合474位於過濾器476之下。側壁492It is transmitted to the cathode contact ring 466 so as to buckle δ91 i 1 L to obtain substantially the same force from all contact points at the interface between the storm plate 821 and the cathode contact ring 466. This force may vary due to the pressure supplied by the fluid source 838. Furthermore, the effectiveness of the pouch assembly 47 is not related to the structure of the cathode contact ring 466. For example, although Fig. 12 shows a pin-like structure and a plurality of discontinuous contact points, the cathode contact ring 466 may also be a continuous contact surface. Since the force transmitted from the pouch 836 to the substrate 821 is variable, the current supplied by the contact% 466 can also be adjusted. As described above, an 'oxidation layer may be formed on the cathode contact ring 4 6 6 to limit the current. However, 'increasing the pressure of the pouch 8 3 6 can offset the current limitation due to oxidation. When the pressure is increased, the ductile oxide layer is more compromised and the contact between the cathode contact ring 4 6 6 and the substrate 8 2 1 becomes better. The effectiveness of this capacity pouch 836 can be further improved by changing the geometry of the cathode contact ring 466. For example, the shape of the blade edge penetrates the oxide layer more easily than a rounded or flat edge. In addition, the fluid sealing ring provided by the expanded bag 836 allows the pump 8 4 5 to maintain the true or selective state before, during, or after the process. Page 39 This paper applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) ----------- • Installation -------- Order --------- Refer to (Please read the precautions on the back before filling (This page) 519677 A7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ---------B7___ _ 5. Description of the invention () 2 or pressure. However, in general, because the pouch 836 can maintain the vacuum condition on the back without continuous operation during the process, the back of Puzhou only needs to function when the substrate is transferred to (or transferred out of) the plating process chamber 400. Maintain vacuum. Therefore, when the bladder 836 is inflated as described above, the back empty condition will be released at the same time when the pump system is removed, for example, at the selected position of the 847 closed (0FF). Removal of the fpu system 859 may be abrupt or involve a process of gradually lowering vacuum conditions. Sliding can provide a control exchange between the inflated bladder 836 and the simultaneous reduction of backside vacuum conditions. This exchange can be controlled manually or by a computer. As described above, when the pouch δ36 is inflated, there is no need to continuously apply a vacuum on the back side, because it may actually cause the substrate to deform or deform and cause poor deposition results. A back surface pressure can be provided on the back surface of the substrate 82 to make the substrate produce a "bowing" effect to perform the process. When the substrate is bowed or curved, the entire substrate may form the desired deposition appearance. Therefore, the tpu system 859 can selectively provide vacuum or pressure conditions on the back of the substrate. For a 200 mm substrate, it is best to provide a back pressure of 5 Psi to bend the substrate. Since the substrate generally has a certain degree of tortuosity 'flowing upward relative to the electrolyte solution, the back pressure makes the substrate M < convex-shaped. The degree of bow $ varies depending on the pressure supplied by the pump system 8 5 9. Figure 12A shows that a preferred pouch 836 has a surface area sufficient to cover a relatively small peripheral portion on the back of the substrate, and its diameter is equal to the cathode contact ring 466. The geometry of the pouch assembly 470 can be changed. Therefore, the bag assembly can be made of a material that is less permeable to the fluid to cover the substrate. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇xlif). ------- ----------- · Installation -------- Order --------- Φ (Please read the notes on the back before filling this page) 519677 A7 B7 V. Description of the invention (8 21 Increased surface area. Figures 19 and 9 are schematic partial cross-sectional views of another embodiment of a substrate carrier combination. This different substrate carrier combination 1900 includes a pouch combination 470, as described above. It has an expandable pouch 836 connected to the back of the intermediate substrate carrier plate 1910. A part of the expandable pouch 836 is preferably sealed to the back surface 1912 of the intermediate substrate carrier plate 1910 by using an adhesive or other bonding material. ^ The front surface 1914 of the intermediate substrate carrier plate 1910 can be adjusted to receive the substrate 82 to be processed. An elastic O-ring 1916 is located in the annular groove 1918 on the front surface 1914 of the intermediate substrate carrier plate. 91 It is in contact with the surrounding part of the back surface of the substrate. Elasticity The mold ring 1916 provides a seal between the back surface of the substrate and the front surface of the intermediate substrate carrier plate. The intermediate substrate carrier plate preferably includes a plurality of holes 1920 extending through the plate and communicating with the fluid in the vacuum port 8 41. The plurality of holes 1 920 can assist the substrate carrier to fix the substrate with a vacuum suction force applied to the back surface of the substrate. According to another embodiment of the substrate carrier combination, the expandable pouch does not directly contact the substrate in process. Therefore, when the substrate is transported, the risk of the inflated pouch being cut or damaged is greatly reduced. The elastic O-ring 1 9 丨 6 is preferably plated or treated so that the hydrophilic surface contacts the substrate, as discussed above. The cathodic contact ring surface. The elastic O-ring 1 9 1 6 can be replaced to ensure proper contact and sealing with the substrate. Figure 25 shows another process of a head assembly with a rotatable head assembly 2410. Example: A rotary actuator is located on a cantilever beam and received on page 41. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) '(Please read first Note on the back, please fill in this page again)-· 1111111 · 11111111-Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 519677 A7 B7 V. Description of the invention () ^ Member department assembly to turn the head assembly during the substrate manufacturing process. This can be The rotating head combination 2410 is set on the head combination support 2452. The different head combination combination 2 4 5 2 and the rotatable head combination 2 41 〇 are provided on the main structure and are similar to those shown in FIG. 6 The head combination bracket 4 5 2 shown above and the head combination 41 0 are shown. The head combination bracket 2 4 5 2 includes a placement column 2454, a column cover 2455, and a cantilever beam 2456. The placement column 2454 is placed on the body of the main frame 214, and the column cover 2455 covers the top portion of the placement column 2454. The placement post 2454 preferably provides a rotational displacement, as indicated by arrow A1 ', to rotate the head combination bracket 2452 with respect to the vertical axis of the placement post. A cantilever beam 2456 extends laterally from the upper half of the placement column 2454 and is pivotally connected to the column cover 2455 at a pivot joint 2459. The rotatable head Shao 2401 is connected to the mounting slide 2460 located at the end of the cantilever beam 2 4 5 6. The placement slide 2460 guides the vertical movement of the head assembly 2410. A head lift actuator 2458 is located at the top of the placement slide 2460 to provide a vertical displacement of the head-shaft assembly 241. The lower end of the cantilever beam 2 4 5 6 is connected to the axis of the cantilever actuator 2 4 5 7 2 4 5 3 'This actuator is, for example, a pneumatic cylinder or a lead screw actuator, and is placed on the placement column 2454 Above. The cantilever actuator 2457 provides pivot movement of the cantilever beam 2456 relative to the joint 2 4 5 9 between the cantilever beam 2 4 5 6 and the column cover 2 4 5 5 as shown by arrow A2. When the cantilever actuator 2457 is recovered, the cantilever beam 2456 moves the head assembly 2410 out of the process chamber 42o. Movement of the head assembly 2410 provides the space needed to remove and / or replace the process chamber 420 from the plating process chamber 24o. When the cantilever actuator 2457 is extended, the cantilever beam 2 4 5 moves the head assembly 2 4 1 0 to the process chamber 4 2 0 so that the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love) (Please read the precautions on the back before filling out this page) Install tr --------- Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 Printed by A7 5. Description of the invention () Position the substrate in the head assembly 2 4 丨 0. The rotatable head combination 2 4 10 includes a rotary actuator 2 4 6 4 which is slidably connected to the slide holder 2460. The axis 2468 of the head lifting actuator 2458 passes through the lifting rail 2 4 6 6 connected to the body of the rotary actuator 2464. The shaft center 2 4 6 8 is preferably a shaft center of a lead screw type, so that the lifting guide 2466 can be moved to a different vertical position in the direction shown by the arrow A3. The rotary actuator 2464 is connected to the substrate carrier assembly 2 450 through the shaft center 2470 and rotates the substrate carrier assembly 2450, as shown by arrow A4. The substrate carrier assembly 2450 includes a pouch assembly, as described in Figures 12-15 and 19 above, and a cathode contact ring, as shown in Figures 7-10 and 18 above. Examples described. Rotating the substrate during the electric boat process generally enhances the deposition results. During the plating process, the head assembly is preferably rotated at a speed between about 2 rp (n and about 20 rpm. The head assembly can also be rotated. This head assembly can be lowered down to remove the seed layer and process on the substrate The electrolyte solution in the chamber is in contact with each other. The head assembly can also be raised to remove the seed layer on the substrate from the electrolyte solution in the process chamber. After the head assembly is lifted from the process chamber, the head is removed in order to enhance the removal. The remaining electrolyte solution on the combination, the head combination is preferably rotated at a high speed (for example, greater than 20 rpm). In one embodiment, the average hook degree of the deposited film has been improved to within 2%, that is, the thickness of the deposited film The maximum deviation is about 2% of the average film thickness, and the standard plating process generally achieves a uniformity within about 5.5%. However, the rotation of the head combination may not be achieved in some examples. Uniform electroplating, especially by adjusting the process parameters to reach page 43. This paper is sized to the Chinese National Standard (CNS) A4 (210 χ 297 mm) ----------- install- ------ Order --------- (Please read the back (Please fill in this page for the matters needing attention) 519677 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () For uniform plating deposition, such as chemicals in electrolyte solution, electrolyte solution flow and other parameters, etc. FIG. 6 shows a schematic cross-sectional view of the electroplating process chamber 400, and the substrate carrier assembly 450 is located above the process chamber 420. The process chamber 420 generally includes a bowl 430, a container body 472, and an anode assembly. 474 and filter 476. The anode combination 474 is preferably placed under the container body 4 7 2 and attached to the lower half of the container body 4 7 2 and the filter 4 7 6 is placed on the anode combination 474 and the container Between the bodies 472. The container body 472 is preferably a cylindrical body and contains electrically insulating materials such as ceramics, plastic, PLEXIGLAS®, iexane, pvc, CPVC, and PVDF. In addition, the container body 472 can also be made from plated metals such as stainless steel, nickel, and “. The plated metal is plated with an insulating layer, such as TEFLON® (EI du Pont de Nemours and Company of Ilmington, DE (Registered trademark), PVDF, plastic, rubber, and other materials, and will not dissolve in the electrolyte solution. This insulating layer is electrically insulated from the electrode, that is, the anode and cathode of the plating system. The size and shape preferably conform to the shape of the plated surface of the substrate and the substrate processed by the system, and are generally circular or rectangular. A preferred embodiment of the container body 4 7 2 includes a cylindrical ceramic tube having an internal diameter of approximately Substrate diameter or slightly larger. The inventors have found that in a required rotational displacement in a typical electroplating system, no rotation is required to obtain a uniform electroplating result when the size of the container body approximately matches the size of the plating surface of the substrate. The upper part of the trough body 472 extends radially outward to form a loop 478. This ring-shaped weir 478 extends beyond the electrolyte solution collector 440, page M. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------- ----- ^ --------- (Please read the notes on the back before filling out this page) 519677 A7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Wall 446, and The electrolyte solution is allowed to flow into the electrolyte solution collector 44. The upper surface of the ridge 478 is preferably matched with the lower surface of the cathode contact ring 466. The upper surface of the weir 478 preferably includes an internal annular flat surface. Portion 480, middle collar portion 482, and outer slope portion 484. When the substrate is placed in the process position, the plated surface of the substrate is placed above the cylindrical opening of the container body 472. The surface below the cathode contact ring 466 and the annular weir 478 A gap is formed between the upper surfaces to allow the electrolyte solution to flow through. The lower surface of the cathode contact mount 466 is placed on the inner flat portion 480 and the middle inclined portion of the annular weir 478. The outer inclined portion 484 is inclined downward to Help electrolyte solution Into the electrolyte solution collector 44o. The lower half of the trough body 472 extends radially outward to form a lower half flange 486 to fix the container body 472 and the bowl 43o together. The outer dimension (circumference) is smaller than the opening 4 "size and the inner periphery of the electrolyte solution collector 440. This smaller-sized annular flange allows the process chamber 420 to be removed and replaced from the plating process chamber 400. Plurality The bolts 488 are preferably arranged on the annular flange 486 and extend downward through the bolt holes in the bowl 430. A plurality of movable fixing nuts 490 fix the process chamber 420 to the bowl 43 〇. A sealing ring 487, such as an elastic O-ring, is located between the container body 472 and the bowl 43 and the inside of the bolt 488 to avoid leakage of the process chamber 42. The nut / bolt group α allows the process The chamber 4 2 0 can be moved and replaced quickly and easily during maintenance. The filter 476 is preferably installed and completely covers the lower half opening of the container body 472, and the anode assembly 474 is located under the filter 476. The side wall 492
-------------------1--------- <請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明() 則位於過濾器476和陽極組合474之間。過濾器476、側 壁492和陽極組合474最好以可移動的扣件,如螺釘及/ 或螺栓固定在谷器本體472的下半表面。另外,此過濾器 476、侧壁492和陽極組合474也可移動式的固定在碗狀 物430上。 陽極組合474最好包含一消耗性陽極以作為電解質溶 液中的金屬來源。另外,陽極組合474也可包含一不會消 耗之陽極,而欲電鍍之金屬則由電解質溶液補充系統22〇 所供應之電解質溶液來提供。如第6圖中所示的,陽極組 合474為自我封閉型模組,其具有多孔的陽極圍場494 且最好由欲电鑛之金屬所製成,例如銅金屬。另外,此陽 極圍場4 9 4也可由多孔的材料如陶瓷或聚合薄膜所製成。 一可溶解金屬496,例如電化學沉積銅金屬之高純度銅, 則放置於陽極圍場494之中。此可溶解金屬最好包含 金屬粒子、金屬線或穿孔之薄板等。此多孔的陽極圍場 之作用也如同一過濾器,可留住陽極圍場中溶解金屬 所產生的微粒。和不會消耗的陽極比較起來,會消耗的(也 就是會溶解的)陽極提供& 杈供了不會產生氣體之電解質溶液並 降低了電解質溶液中經常補充金屬的需求。 一陽極電性接點498乃經由陽極圍場494***以提供 可溶解金屬496來自電源供應器的電性連接。此陽極電性 接點498最好由不會在電解質溶液中溶解的導電材料所製 成,如欽、舶和具始鍵層的不銹鋼。陽極電性接點498延 仲到碗狀物430並連接到電源供應器上。此陽極電性接點 第46頁 本纸張尺度_ 家標準(CNS)A4規格(210 ------------_裝--------訂---------參 (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 498最好包含了螺纹4分497和密封環495。固定螺帽499 之螺紋部分可用來將陽極電性接點498固定在碗狀物43〇 上。-種例如彈性襯塾之密封環495則位於固定螺帽499 和碗狀物430之間以避免來自製程室42〇的洩露。 碗狀物430 —般包含了圓柱部分5〇2和底面部分 504。上半部環狀凸緣50 6由圓柱部分5〇2之頂端徑向往 外延伸。上半部環狀凸緣506包括了複數個孔洞5〇8以搭 配容器本體472之下半部環狀凸緣486的螺栓488數目。 螺栓488穿過孔洞508 ,且固定螺帽49〇鎖在螺栓488上 以固定碗狀物430之上半部環狀凸緣5〇6和容器本體472 之下半邵彡哀狀凸緣4 8 6。上半部環狀凸緣5 〇 6之外部尺 寸,也就是其周長,最好約和下半部環狀凸緣486之外部 尺寸,也就是其周長,為相同的。當製程室42〇位於主架 構214上時,碗狀物430之上半部環狀凸緣5〇6的下半部 表面置於主架構214之支撐凸緣上。 圓柱部分50 2之内部圓周則容納了陽極組合474和過 滤器476。過濾器476和陽極組合474之外部尺寸略小於 圓柱部分502之内部尺寸。這些相對尺寸可促使大部分的 電解質溶液在流經過濾器4 7 6之前首先流過陽極組合 474。碗狀物430之底面部分504包括了電解質溶液入口 510 ’其連接到電解質溶液補充系統22〇之電解質溶液供 應線路上。陽極組合4 7 4最好放在碗狀物4 3 〇之圓柱部分 5 02的中間部分,此陽極組合474的結構可提供一縫隙作 為陽極組合474和底面部分504上之電解質溶液入口 第47頁 (請先閱讀背面之注意事項再填寫本頁)------------------- 1 --------- < Please read the notes on the back before filling this page) 519677 A7 B7 V. Description of the invention () Is located between the filter 476 and the anode combination 474. The filter 476, the side wall 492, and the anode assembly 474 are preferably fixed to the lower half surface of the trough body 472 with removable fasteners such as screws and / or bolts. In addition, the filter 476, the side wall 492, and the anode combination 474 may be movably fixed to the bowl 430. The anode assembly 474 preferably includes a consumable anode as a source of metal in the electrolyte solution. In addition, the anode assembly 474 may also include an anode that does not consume, and the metal to be plated is provided by the electrolyte solution supplied by the electrolyte solution replenishing system 22. As shown in Fig. 6, the anode assembly 474 is a self-enclosed module, which has a porous anode pad 494 and is preferably made of a metal such as copper metal. Alternatively, the anode pad 4 4 may be made of a porous material such as a ceramic or a polymer film. A soluble metal 496, such as high-purity copper of electrochemically deposited copper metal, is placed in the anode pad 494. The soluble metal preferably contains metal particles, metal wires, perforated sheets, and the like. This porous anode pad also acts like a filter, retaining particulates from dissolved metals in the anode pad. Compared with non-consumable anodes, consumable (ie, dissolvable) anodes provide & branches that provide an electrolyte solution that does not generate gas and reduce the need for frequent metal replenishment in the electrolyte solution. An anode electrical contact 498 is inserted through the anode pad 494 to provide an electrical connection of the dissolvable metal 496 from the power supply. The anode electrical contact 498 is preferably made of a conductive material that will not dissolve in the electrolyte solution, such as stainless steel and stainless steel with a bonding layer. The anode electrical contact 498 extends to the bowl 430 and is connected to the power supply. This anode electrical contact page 46 This paper size _ Home Standard (CNS) A4 specifications (210 ------------_ installed -------- ordered ---- ----- Refer to (Please read the precautions on the back before filling this page) 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () 498 It is best to include 4 points of thread 497 and seal ring 495 The threaded part of the fixing nut 499 can be used to fix the anode electrical contact 498 on the bowl 43. A sealing ring 495 such as an elastic liner is located between the fixing nut 499 and the bowl 430. Avoid leakage from the process chamber 42. The bowl 430 generally includes a cylindrical portion 502 and a bottom portion 504. The upper half of the annular flange 506 extends radially outward from the top of the cylindrical portion 502. Top The half annular flange 506 includes a plurality of holes 508 to match the number of bolts 488 of the half annular flange 486 below the container body 472. The bolts 488 pass through the holes 508, and the fixing nuts 49 are locked on the bolts. The upper half of the 488 is fixed with a ring-shaped flange 506 above the bowl 430 and the lower half of the container body 472 with a saddle-shaped flange 4 8 6. The upper half of the ring-shaped flange 506 is outside The size, that is, its perimeter, is preferably about the same as the outer dimensions of the lower half annular flange 486, that is, its perimeter. When the process chamber 42 is located on the main frame 214, the bowl 430 The lower half surface of the upper half annular flange 506 is placed on the supporting flange of the main frame 214. The inner circumference of the cylindrical portion 50 2 contains the anode combination 474 and the filter 476. The filter 476 and the anode The external dimensions of the assembly 474 are slightly smaller than the internal dimensions of the cylindrical portion 502. These relative dimensions may cause most of the electrolyte solution to flow through the anode assembly 474 before passing through the filter 4 7 6. The bottom portion 504 of the bowl 430 includes the electrolyte The solution inlet 510 'is connected to the electrolyte solution supply line of the electrolyte solution replenishing system 22. The anode combination 4 7 4 is preferably placed in the middle portion of the cylindrical portion 5 02 of the bowl 4 3 0. The structure of the anode combination 474 A slit can be provided as the electrolyte solution inlet on the anode combination 474 and the bottom surface portion 504 (please read the precautions on the back before filling this page)
519677 A7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明() 之間的電解質溶液流動。 一可釋放的連接器最妤連接電解質溶液入口 510和電 解質溶液供應線,使得製程室420較容易移除和替換。當 製程室420需要維護時,電解質溶液由製程室420排除, 且電解質溶液供應線中的電解質溶液流動加以中斷並排 除。電解質溶液供應線之連接器由電解質溶液入口 5丨0放 鬆,而連接到陽極組合474之電性連接也加以分開。頭部 組合410會舉起或旋轉而清出製程室420要移除的空間。 接著將製程室420由主架構214中移走,然後一新的或修 理過後的製程室則放入此主架構2 1 4中。 另外,碗狀物430可固定在主架構214之支撐凸緣 上’且具有陽極和過濾器之容器本體472可移除而進行維 護。於此例子中,固定陽極組合474和容器本體472到碗 狀物430之螺帽可移除以協助陽極組合474和容器本體 4 7 2之移動。新的或修理過的陽極組合4 7 4和容器本體4 7 2 接著放入主架構214中並固定在碗狀物430上。 第20圖為一密封陽極的實施例之截面示意圖。此密 封陽極2000包括了具滲透性的陽極圍場,其可過濾或者 捕捉陽極板2004所溶解之金屬所產生的,,陽極沉澱,,或微 粒。如第20圖中所示的,陽極板2〇〇4包含了 一塊銅金屬。 此陽極板2004最好為一高純度、無氧之銅金屬,並包圍 在具親水性的陽極密封薄膜2002中。陽極板2004由複數 個延伸到碗狀物430底部的電性接點或進料貫穿2〇〇6所 固定並支撐。電性接點或進料貫穿2〇〇6延伸經過陽極密 本紙張尺度適用中國國家標準(CNS)A4規 第48| (請先閱讀背面之注意事項再填寫本頁) 裝---- 訂.丨 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 封薄膜2002到陽極板2004之底部表面。電解質溶液之方 動以箭頭A指示,其由位於碗狀物4 3 0之底部的電解質& 液入口 5 1 0流經過陽極和碗狀物側壁之間的縫隙。電解質 溶液也滲透到陽極密封薄膜2002中並流入或流出陽 封薄膜和陽極板之間的缝隙,如箭頭B所示。此陽極_ # 薄膜2002最好包含一親水性多孔薄膜,例如一修正過的 聚偏二氟乙烯薄膜,其多孔性在約60%和80%之間,較佳 約7 0%,且孔徑大小在約〇. 025微米和約1微米之間,較 佳約0 · 1微米和約0 · 2微米之間。親水性多孔薄膜的一個 範例為 Durapore Hydrophi 1 ic Membrane,可由 Mi 11 ipore Corporation,位於 Bedford, Massachusetts 的公司獲 得。當電解質溶液流經密封薄膜時,由溶解之陽極所產生 的陽極沉澱物和微粒被密封薄膜所過濾或捕捉住。因此, 在電鍍製程中此密封薄膜可改善電解質溶液之純度,且在 電鍍製程中由於陽極沉澱物和污染微粒在基板上所生成 的缺陷可有效的降低。 第21圖為密封陽極之另一實施例的截面示意圖。類 似於第一實施例之密封陽極,陽極平板2 〇 〇 4乃固定及支 撐於電性進料貫穿2006上。頂端密封薄膜2〇 〇8和底部密 封薄膜2010則分別位於陽極平板2〇〇4的上面和下面,並 貼附在位於陽極平板2004周圍之薄膜支撐環2012上。頂 端和底部密封薄膜2008,2010包含了上述所列有關第一 實施例之密封陽極之密封薄膜材料。薄膜支撐環2012和 密封薄膜比較起來最好包含較硬的材料,例如塑膠或其 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) • ϋ I I I n n n ϋ ϋ I n · i n n n n n i 一aj» n ϋ ϋ· »ϋ n I— I f請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 它的聚合物。一旁通的流體入口 2 0 1 4穿過碗狀物4 3 0之底 部及密封薄膜2010之底部以便將電解質溶液導入密封薄 膜和陽極平板之間的縫隙。一旁通出口 2 0 1 6則連接到薄 膜支撐環2 0 1 2並延伸穿過碗狀物4 3 0以協助具有陽極沉 殿或所產生之微粒的多餘電解質溶液流出密封陽極到廢 棄槽中(未顯示出來)。 在旁通流體入口 2014和主要的電解質溶液入口 510 中流動的電解質溶液最好個別由流體控制閥2 0 2 0,2 0 2 2 所控制。個別的流體控制閥2020,2022分別放置在連接 到入口之流體管路上。在旁通流體入口 2 0 1 4中的流體壓 力最好維持在比主要電解質溶液入口 510中的壓力較高 的情況。碗狀物430中電解質溶液來自主要電解質溶液入 口 510以箭頭A表示,且在密封陽極200 0中電解質溶液之 流動以箭頭B表示。導入密封陽極之部分電解質溶液經由 旁通出口 2016流出密封陽極。在提供了專用的旁通電解 質溶液供應到密封陽極後,陽極沉澱物或因陽極溶解所 產生的微粒可連續的由陽極移除,因而在電鍍製程中改 善了電解質溶液之純度。 第22圖為密封陽極之第三實施例的截面示意圖。此 實施例之密封陽極2000包括了陽極平板2002,頂端密封 薄膜20 0 6,底部密封薄膜2010,和薄膜支撐環2010。陽 極平板2002係固定並支撐於複數個電性進料貫穿2006 上。頂端和底部密封薄膜2 〇 〇 8 , 2 0 1 〇則貼附到薄膜支撐 環2012。一旁通的流體入口 2014穿過碗狀物430之底部及 第50頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) -------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明() 密封薄膜20 10之底部以便將電解質溶液導入密封薄膜和 陽極平板之間的缝隙。此密封陽極之第三實施例最好包 含了上述第一和第二實施例所提的密封陽極材料。依照 第三實施例之底部密封薄膜2〇1〇包括了位於主要電解質 溶液入口 5 1 0之上的一或多個開口 2 〇 2 4。此開口 2 〇 2 4可調 適成接收來自主要電解質溶液入口 51 〇的電解質溶液流 且其大小最好和主要電解質溶液入口 51〇之内部周圍尺 寸約略相同。來自主要電解質溶液入口 51 〇的電解質溶液 流以前頭A表示,且在密封陽極内之電解質溶液流以箭頭 B表示。部分的電解質溶液經由旁通出口 2〇16流出,並攜 帶了部分的陽極沉澱和陽極溶解所產生的微粒。 經濟部智慧財產局員工消費合作社印製 ------------^---- (請先閱讀背面之注意事項再填寫本頁) Φ 第23圖為密封陽極之再一實施例的截面示意圖。此 實施例之密封陽極2000包括了陽極平板2002,頂端密封 薄膜2006,底部密封薄膜2010,和薄膜支撐環2012。陽 極平板2 0 0 2係固定並支撐在複數個電性進料貫穿2 〇 〇 g 上。頂端和底部密封薄膜2 0 0 8,2 0 1 0則貼附到薄膜支撐 環2012上。一旁通的流體入口 2014穿過碗狀物430之底部 及底部密封薄膜2 0 1 0以便將電解質溶液導入密封薄膜和 陽極平板之間的缝隙。此實施例之密封陽極最好包含了 上述第一和第二實施例的密封陽極材料。電解質溶液最 好流經旁通流體入口 2 0 1 4且主要電解質溶液入口 5 1 〇分 別由控制閥2 0 2 0,2 0 2 2各別控制。來自主要電解質溶液 入口 5 1 0的電解質溶液流以箭頭A表示。經由密封陽極之 電解質溶液流則以箭頭B表示。對此實施例來說,陽極沉 第51頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 519677 A7 B7 五、發明說明() 殿物和陽極平板溶解而產生的微粒在電解質溶液通過薄 膜時即由密封薄膜所過濾和捕捉。 第1 6圖為電解質溶液補充系統2 2 〇之示意圖。電解質 溶液補充系統220在電鍍製程時提供電鍍製程室之電解 質溶液。電解質溶液補充系統22 0 —般包含了主要的電解 質溶液槽6 0 2,給料模組6 0 3,過濾模組6 0 5,化學分析模 组6 1 6,和以電解質溶液廢棄排放6 2 〇連接到分析模組6 16 的包解質溶液廢棄處理系統6 2 2。一或多個控制器控制了 王槽602中電解質溶液之組成和電解質溶液補充系統22〇 之操作。此些控制器最好可以獨立操作但卻也和電鍍系 統平σ 2 0 0之控制器2 2 2整合在一起。主要的電解質溶液 槽602提供了電解質溶液之貯存槽,且包括了電解質溶液 供應管線61 2經由流體幫浦6〇8和閥門607而連接到每個 运鍍製私皇。配置於主槽602並和其熱連接之熱交換器 624或加熱器/冷卻器控制了儲存於主槽6〇2之電解質溶 液的溫度。熱交換器624係連接並由控制器610所操作。 給料模組6 0 3以供應管線連接到主槽β 〇 2,且包括了 複數個來源槽6 0 6,或進料瓶,複數個閥門6 〇 9,和一控 制器611。來源槽6 〇 6含有組成電解質溶液之化學物質且 一般也包括了去離子水來源槽和硫酸銅(CuS〇4)來源槽 以組成電解質溶液。其它的來源槽6 〇 6可包含硫酸 (H2S〇4) ’氫氯酸(HC1)和各種添加劑如乙二醇。每個來源 槽取好以色彩加以編碼且接上獨特的配合出口連接器到 給料模組中的配合入口連接器。由於將來源槽以色彩編 第52頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ▼裝--------訂--------—· 經濟部智慧財產局員工消費合作社印製 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 碼並以獨特的連接器裝到來源槽上’則當交換或取代來 源槽時由於人為所產生的失誤可有效的降低。 去離子水來源槽最好也可以在系統維護時提供去離 子水進行系統清潔。閥門609及所連結的每個來源槽6〇6 可調節流到主槽602的化學物質,且其可為任何數種商業 上可取得之閥門如蝴蝶閥’節流閥和類似閥門等。閥門 6 0 9之啟動則由控制器6 11來完成,控制器6丨丨最好連接到 控制器2 2 2以便接收訊息。 電解質溶液過濾模組6 0 5包括了複數個過濾槽6 〇 4。 電解質溶液返回管線.6 14連接到每個製程室和一或多個 過滤槽604之間。在電解質溶液回到主槽6〇2進行再利用 時’過滤槽6 0 4將使用過之電解質溶液中不必要的成分移 除。主槽602也連接到過濾槽6〇4以幫助主槽602中之電解 質溶液之再循環和過濾。經過濾槽6〇4由主槽6〇2再循環 電解質溶液後’電解質溶液中不需要的成分可由過濾槽 β 0 4持續的移除以維持一定程度的純度。另外,在主槽6 〇 2 和過濾模組605之間再循環電解質溶液可讓電解質溶液 中不同的化學成分完全的混合。 電解質溶液補充系統2 2 0也包括了化學成分分析器 模組61 6以提供電解質溶液之化學組成的即時化學成分 分析。此分析器模組61 6由一抽樣管線6 1 3流體性耦合到 主槽602,且由一出口管線621耦合到廢棄處理系統622。 分析益模組β 1 6 —般至少包含一分析器和一控制器來操 作此分析器。一特別處理工具所需之分析器數目和電解 第53頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ----------------------------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明( 質溶液的成分有關。例如,第一個分析器可用來監測有 機物質的濃度,第二個分析器則用來監測無機物化學成 分。於第1 6圖中所示的特定實施例中,化學成分分析器 模、’且6 1 6 ^ ^自動滴定分析器6 1 5和一循環電量剥離器 (CVS) 617。兩個分析器皆可由不同的供應商來取得。可 使用的較有利之自動滴定分析器可由派克系統(Parker519677 A7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Electrolyte solution flows between. A releasable connector connects the electrolyte solution inlet 510 and the electrolytic solution supply line, making the process chamber 420 easier to remove and replace. When the process chamber 420 requires maintenance, the electrolyte solution is discharged from the process chamber 420, and the flow of the electrolyte solution in the electrolyte solution supply line is interrupted and eliminated. The connector of the electrolytic solution supply line is loosened from the electrolytic solution inlet 5 and 0, and the electrical connection to the anode assembly 474 is also separated. The head assembly 410 is raised or rotated to clear the space to be removed from the process chamber 420. The process room 420 is then removed from the main frame 214, and then a new or repaired process room is placed in the main frame 2 1 4. In addition, the bowl 430 may be fixed on the supporting flange of the main frame 214 'and the container body 472 having an anode and a filter may be removed for maintenance. In this example, the nut fixing the anode assembly 474 and the container body 472 to the bowl 430 can be removed to assist the movement of the anode assembly 474 and the container body 472. The new or repaired anode assembly 4 7 4 and the container body 4 7 2 are then placed in the main frame 214 and fixed on the bowl 430. Figure 20 is a schematic cross-sectional view of an embodiment of a sealed anode. The sealed anode 2000 includes a permeable anode pad which can filter or capture the anode, precipitation, or particles generated by the dissolved metals in the anode plate 2004. As shown in Figure 20, the anode plate 2004 contains a piece of copper metal. The anode plate 2004 is preferably a high-purity, oxygen-free copper metal and is enclosed in a hydrophilic anode sealing film 2002. The anode plate 2004 is fixed and supported by a plurality of electrical contacts or feeds extending through the bottom of the bowl 430 through 2006. Electrical contacts or feeds extend through the anode seal through 2006. The paper size is subject to Chinese National Standard (CNS) A4 Rule 48 | (Please read the precautions on the back before filling this page).丨 519677 A7 B7 printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Sealing film 2002 to the bottom surface of anode plate 2004. The direction of the electrolyte solution is indicated by arrow A, which flows through the gap between the anode and the side wall of the bowl from the electrolyte & liquid inlet 5 10 located at the bottom of the bowl 430. The electrolyte solution also penetrates into the anode sealing film 2002 and flows into or out of the gap between the anode sealing film and the anode plate, as shown by arrow B. The anode_ # film 2002 preferably includes a hydrophilic porous film, such as a modified polyvinylidene fluoride film, having a porosity between about 60% and 80%, preferably about 70%, and a pore size Between about 0.025 microns and about 1 microns, preferably between about 0.1 microns and about 0.2 microns. An example of a hydrophilic porous membrane is Durapore Hydrophi 1 ic Membrane, available from Mi 11 ipore Corporation, a company based in Bedford, Massachusetts. When the electrolyte solution flows through the sealing film, the anode precipitates and particles generated by the dissolved anode are filtered or captured by the sealing film. Therefore, the sealing film can improve the purity of the electrolyte solution during the electroplating process, and defects generated on the substrate due to anode precipitation and contamination particles can be effectively reduced during the electroplating process. FIG. 21 is a schematic cross-sectional view of another embodiment of a sealed anode. Similar to the sealed anode of the first embodiment, the anode plate 2004 is fixed and supported by an electrical feed through 2006. The top sealing film 2000 and the bottom sealing film 2010 are located above and below the anode plate 2004, respectively, and are attached to a film support ring 2012 located around the anode plate 2004. The top and bottom sealing films 2008, 2010 contain the sealing film materials for the sealing anode of the first embodiment listed above. Compared with the sealing film, the film support ring 2012 should preferably contain a harder material, such as plastic or its paper size. Applicable to China National Standard (CNS) A4 (210 X 297 mm) • ϋ III nnn ϋ ϋ I n · innnnni aj »n ϋ ϋ ·» ϋ n I— I f Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention . A bypass fluid inlet 2 0 1 4 passes through the bottom of the bowl 4 3 0 and the bottom of the sealing film 2010 to introduce the electrolyte solution into the gap between the sealing film and the anode plate. A bypass outlet 2 0 1 6 is connected to the membrane support ring 2 0 1 2 and extends through the bowl 4 3 0 to assist the excess electrolyte solution with the anode sink or the generated particles to flow out of the sealed anode into the waste tank ( Not shown). The electrolyte solution flowing in the bypass fluid inlet 2014 and the main electrolyte solution inlet 510 is preferably controlled individually by the fluid control valves 2 0 2 0 2 0 2. Individual fluid control valves 2020, 2022 are placed on the fluid lines connected to the inlet, respectively. The pressure of the fluid in the bypass fluid inlet 2014 is preferably maintained at a higher pressure than in the main electrolyte solution inlet 510. The electrolyte solution in the bowl 430 comes from the main electrolyte solution inlet 510 as indicated by arrow A, and the flow of the electrolyte solution in the sealed anode 2000 is indicated by arrow B. Part of the electrolyte solution introduced into the sealed anode flows out of the sealed anode through the bypass outlet 2016. After a dedicated bypass electrolyte solution is supplied to the sealed anode, the anode precipitate or particles generated by the anode dissolution can be continuously removed by the anode, thereby improving the purity of the electrolyte solution during the plating process. Fig. 22 is a schematic sectional view of a third embodiment of a sealed anode. The sealed anode 2000 of this embodiment includes an anode plate 2002, a top sealing film 206, a bottom sealing film 2010, and a film support ring 2010. The anode plate 2002 is fixed and supported on a plurality of electrical feedthroughs 2006. The top and bottom sealing films 2008 and 2000 are attached to the film support ring 2012. A bypassed fluid inlet 2014 passes through the bottom of the bowl 430 and page 50. This paper size applies to China National Standard (CNS) A4 (210 X 297 meals) ------------- ------ ^ --------- (Please read the precautions on the back before filling this page) 519677 A7 B7 V. Description of the invention The gap between the film and the anode plate. The third embodiment of the sealed anode preferably contains the sealed anode material mentioned in the first and second embodiments. The bottom sealing film 2010 according to the third embodiment includes one or more openings 204 above the main electrolyte solution inlet 5 10. This opening 2 0 2 4 is adapted to receive the electrolyte solution flow from the main electrolyte solution inlet 51 0 and preferably has a size approximately the same as the size of the surrounding area inside the main electrolyte solution inlet 51 0. The electrolyte solution flow from the main electrolyte solution inlet 51 ° is indicated by head A, and the electrolyte solution flow in the sealed anode is indicated by arrow B. Part of the electrolyte solution flows out through the bypass outlet 2016, and carries part of the particles produced by anode precipitation and anode dissolution. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ ^ ---- (Please read the precautions on the back before filling out this page) Φ Figure 23 is another one of the sealed anode A schematic cross-sectional view of the embodiment. The sealed anode 2000 of this embodiment includes an anode plate 2002, a top sealing film 2006, a bottom sealing film 2010, and a film supporting ring 2012. The anode plate 2000 was fixed and supported on a plurality of electrical feeds through 2000 g. The top and bottom sealing films 2 0 8 and 2 0 10 are attached to the film support ring 2012. A bypassed fluid inlet 2014 passes through the bottom of the bowl 430 and the bottom sealing film 2 10 to introduce the electrolyte solution into the gap between the sealing film and the anode plate. The sealed anode of this embodiment preferably contains the sealed anode materials of the first and second embodiments described above. The electrolyte solution preferably flows through the bypass fluid inlet 20 14 and the main electrolyte solution inlet 5 1 0 is controlled by the control valves 2 0 2 and 2 2 2 respectively. The electrolyte solution flow from the main electrolyte solution inlet 5 10 is indicated by arrow A. The flow of the electrolyte solution through the sealed anode is indicated by arrow B. For this example, the paper size on page 51 of the anode sink is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) 519677 A7 B7. 5. Description of the invention As the electrolyte solution passes through the membrane, it is filtered and captured by the sealing membrane. FIG. 16 is a schematic diagram of the electrolyte solution replenishing system 2 2 0. The electrolyte solution replenishing system 220 provides an electrolytic solution in the plating process chamber during the plating process. The electrolyte solution replenishing system 22 0 generally includes a main electrolyte solution tank 6 0 2, a feed module 6 0 3, a filter module 6 0 5, a chemical analysis module 6 1 6, and waste electrolyte discharge 6 2 〇 An encapsulation solution disposal system 6 2 2 connected to the analysis module 6 16. One or more controllers control the composition of the electrolyte solution in the king tank 602 and the operation of the electrolyte solution replenishing system 22o. These controllers can preferably be operated independently but also integrated with the controller 2 2 2 of the plating system level σ 2 0 0. The main electrolytic solution tank 602 provides an electrolytic solution storage tank, and includes an electrolytic solution supply line 612, which is connected to each of the plating princes via a fluid pump 608 and a valve 607. A heat exchanger 624 or a heater / cooler disposed in the main tank 602 and thermally connected thereto controls the temperature of the electrolyte solution stored in the main tank 602. The heat exchanger 624 is connected and operated by the controller 610. The feed module 603 is connected to the main tank β 02 with a supply line, and includes a plurality of source tanks 606, or a feed bottle, a plurality of valves 609, and a controller 611. The source tank 606 contains chemicals that make up the electrolyte solution and generally also includes a deionized water source tank and a copper sulfate (CuS04) source tank to make up the electrolyte solution. Other source tanks 606 may contain sulfuric acid (H2S04) 'hydrochloric acid (HC1) and various additives such as ethylene glycol. Each source slot is color-coded and connected with a unique mating outlet connector to a mating inlet connector in the feed module. Since the source slot is color-coded, page 52, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ▼ Install ------ --Order --------- · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description () code On the source slot, errors caused by human error can be effectively reduced when the source slot is exchanged or replaced. Deionized water source tanks are also recommended to provide deionized water for system cleaning during system maintenance. The valve 609 and each source tank 606 connected to it can regulate the chemicals flowing to the main tank 602, and it can be any of several commercially available valves such as butterfly valves' throttles and the like. The activation of the valve 6 0 9 is performed by the controller 6 11. The controller 6 丨 丨 preferably is connected to the controller 2 2 2 to receive the message. The electrolytic solution filtering module 605 includes a plurality of filtering tanks 604. The electrolyte solution return line. 6 14 is connected between each process chamber and one or more filter tanks 604. When the electrolyte solution is returned to the main tank 602 for reuse, the 'filter tank 604' removes unnecessary components from the used electrolyte solution. The main tank 602 is also connected to the filter tank 604 to assist the recycling and filtration of the electrolytic solution in the main tank 602. After the electrolyte solution is recycled from the main tank 602 through the filter tank 604, the unnecessary components in the electrolyte solution can be continuously removed by the filter tank β 0 4 to maintain a certain degree of purity. In addition, recycling the electrolyte solution between the main tank 602 and the filter module 605 allows the different chemical components in the electrolyte solution to be completely mixed. The electrolyte solution replenishing system 220 also includes a chemical composition analyzer module 616 to provide instant chemical composition analysis of the chemical composition of the electrolyte solution. The analyzer module 616 is fluidly coupled to the main tank 602 by a sampling line 6 1 3 and is coupled to the waste treatment system 622 by an outlet line 621. The analysis module β 1 6 generally includes at least an analyzer and a controller to operate the analyzer. Number of analyzers and electrolysis required for a special processing tool Page 53 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ---------------- ------------- (Please read the notes on the back before filling out this page) 519677 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The first analyzer can be used to monitor the concentration of organic substances, and the second analyzer can be used to monitor the chemical composition of inorganic substances. In the specific embodiment shown in FIG. 16, the chemical composition analyzer module, 'and 6 1 6 ^ ^ Automatic Titration Analyzer 6 1 5 and a Cyclic Power Stripper (CVS) 617. Both analyzers can be obtained from different suppliers. The more advantageous automatic titration analyzer can be used by Parker
Systems)取得,且循環電量剥離器可由ΕΠ取得❶此自動 滴定分析器615決定了無機物質之濃度如氯化銅和酸。 CVS6 1 7決定有機物質之濃度,例如用於電解質溶液中的 不同添加物和製程中所產生的副產品,兩者皆由製程室 返回主槽6 0 2。 弟6圖所示之分析器模組僅為例舉而已。於另一實 施例中每個分析器以不同的供應線耦合到主要的電解質 落敗槽,且由不同的控制器加以操作。熟知此項技術的 人士將會瞭解其它的實施例。 於操作時,電解質溶液樣本經由抽樣管線613流到分 析器模組616。雖然此樣本可週期性的擷取,但最好有連 續性的包解質〉谷液維持流入分析器模組6 1 6。一部分的樣 本送到自動滴定分析器615且一部分送到CVS617進行適 當的分析。控制器619將指令訊號初始化以操作分析器 615,617並產生資料。來自化學成分分析器6丨5,Η?之 訊息接著傳遞到控制器222。控制器222處理此訊息且傳 輸包括使用者所定義的化學劑量參數訊號到進料控制器 6 11。所接收到的訊息則用來提供由操作一或多個閥門 第54頁 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 609對來源化學成分補充速率的即時調整。所接收到的訊 息因而包含了在整個電鍍製程中想要達成的,且最好是. 固定的電解質溶液之化學組成。來自分析模組之廢棄電 解質溶液接著經由出口管線621流到廢棄物處理系統 622 〇 雖然較佳實施例利用了電解質溶液的即時監測和調 整,但仍可利用不同的方式。例如,進料模組603可由操 作者觀察化學分析模組6丨6所提供的輸出閥門手動加以 控制。系統軟體最好可容許自動即時調整模式及操作者 手動模式兩者。再者,雖然複數個控制器顯示於第丨6圖 中同時也可使用單一控制器來操作系統的不同元件, 例如化學分析器模組616,進料模組6〇3,和加熱交換器 6 24。其它的實施例對於熟知此項技術的人將為顯而易見 的0 電解質溶液補充系統2 2 0也包括了連接到電解質溶 液廢棄物處理系統6 2 2之電解質溶液廢棄排放6 2 0,以便 對電鍍系統中使用過的電解質溶液,化學物質和其它的 流體進行安全的棄置。電鍍室最好包括對電解質溶液廢 棄排放620,或電解質溶液廢棄物處理系統622直接的管 線連接。電解質溶液廢棄排放620將電鍍室之電解質溶液 不回到電解質溶液補充系統2 2 0而加以排放。電解質溶液 補充系統2 2 0最好也包括了壓榨連線以便將電解質溶液 廢棄排放620之多餘的電解質溶液排出。 電解質溶液補充系統220最妤也包括了一或多個除 第55頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ' . --------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 氣模組630可由電解質溶液中移除不需要的氣體。除氣模 組一般包含了薄膜來分離經過除氣模組之流體所產生的 氣體’及真$系統來移除釋放出的氣體。除氣模組6 3 〇最 好放在電解質溶液供應線61 2上靠近製程室24〇的位置。 除氣模組最好儘可能的靠近製程室24〇,因此來自電解質 溶液補充系統的大部分氣體均可在電解質溶液進入製程 室之前以除氣模組加以移除。每個除氣模組最好包括兩 個出口以供應除氣後的電解質溶液到每個製程站2丨8的 兩個製程室2 4 0。另外,除氣模組6 3 0也可提供到每個製 程室。此除氣模組可放在許多不同的位置。例如,此除 氣模組可放在電解質溶液補充系統中不同的位置,如沿 著過濾器部分或在與主槽或製程室的封閉迴路系統中。 於另一個實施例中,一除氣模組位於電解質溶液供應管 路6 1 2的線上以提供除氣後之電解質溶液到電子_化學沉 積系統之所有的製程室240。另外,一不同的除氣模組位 於去離子水供應管線之線上或封閉迴路中,用於去除去 離子水源中的氧氣。由於去離子水係用來清洗製程基 板,自由的氧氣最好在去離子水到達SRD模組前即去除, 因而電鍍銅金屬較不會在清洗製程時被氧化。除氣模組 為習知的技術且商業上之實施可容易的獲得並在不同的 應用情況中加以利用。商業上可取得之除氣模組來自 Millipore公司,位於Bedford,Massachusetttes。 如第26a圖中所示的除氣模組630之一實施例包括了 具有流體(也就是電解質溶液)之排水性薄膜6 3 2,通道 第56頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) -------!·裝--------訂---------Φ (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 一— . ..........— 一 五、發明說明() 6 3 4在薄膜6 3 2之一側。真空系統6 3 6則配置於薄膜之另一 面。除氣模組之密封器638包括了入口 640和一或多個出 口 642。當電解質溶液通過除氣模組630時,在電解質溶 液中的氣體和其它的微氣泡被排水性薄膜從電解質溶液 中分離並由真空系統移除。除氣模組630’之另一實施 例,如第26b圖中所示,包括了管狀排水性薄膜632,和配 置於管狀排水性薄膜6 3 2周圍之真$系統6 3 6 ^電解質溶 液係導入管狀排水性薄膜内,且電解質溶液通過管内的 流體通道6 3 4。排水性薄膜將電解質溶液中的氣體和其它 微氣泡分離,且管路連接到真空系統6 3 6以移除分離之氣 體。更多複雜的除氣模組設計亦被仔細考量,其中包括 了穿過薄膜具彎曲路徑的電解質溶液設計和其它多段設 計之除氣模組。 雖然第1 6圖中並未顯示出來’但電解質溶液補充系 統2 2 0也包括了一些不同的元件。例如,電解質溶液補充 系統2 2 0最好也包括了一或多個額外的化學物品辟存槽 以做為基板清潔系統,如SRD站。也可利用雙重管線來進 行危險材料之連接以提供整個系統中化學物品安全的傳 送。選擇性地,此電解質溶液補充系統2 2 0也可包括連接 到額外或外部的電解質溶液處理系統以供應額外的電解 質溶液到電鍍系統中。 第17圖為快速熱退火(RTA)反應室之一實施例的截 面示意圖。RTA反應室211最好連接到負載站210,且基板 乃利用負載站傳送機械手臂228送入和送出RTA反應室 第57頁 ‘紙張尺度適用中國國家標準(CNS)A4規格(21〇 χ 297公釐 (請先閱讀背面之注意事項再填寫本頁) 零裝--- tr--------- 經濟部智慧財產局員工消費合作社印製 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 211。如第2和第3圖中所示的電鍍系統最好包含兩個RTA 反應室211置於負載站210之兩邊,相當於負載站210之對 稱性設計。RTA反應室一般為習知的技術,而一般RTA反 應室乃於基板製程系統中用來加強沉積材料之性質。多 種RTA反應室設計,包括熱平板設計和熱燈泡設計,均可 用來加強電鍍結果。其中一種特別有用的RTA反應室為WxZ 反應室,可由位於 Santa Clara, California 之 Applied materials, Inc·取得。雖然在此所描述的為熱平板RTA 反應室,其它的RTA反應室亦可使用。 RTA反應室211 —般包含了圍場902,加熱器板904, 加熱器907和複數個基板支撐栓906。圍場902包括了基 底908,側壁910和頂端912。冷卻平板913最好位於圍 場的頂端912之下。另外,冷平板也可整合成圍場之頂端 9 1 2的一部分。反射器絕緣盤9 1 4最妤位於圍場9 0 2中的 基底908之上。此反射器絕緣盤914 一般由石英、鋁或其 它能耐高溫(大於約5 0 0 °C )的材料所製成。此反射器絕緣 盤乃作為加熱器9 0 7和圍場9 0 2之間的熱絕綠器。絕緣盤 914也可鍍上一層反射材料如金,以便將熱導回加熱器板 906 $ 加熱器板9 0 4和系統中所處理的基板比較起來具有較 大質量。加熱器板最好由例如碳化矽、石英或其它不會在 RTA反應室211中和周圍氣體反應或和基板材料反應的材 料所製成。加熱器907 —般包含了阻抗性加熱元件或導電 性/輻射性加熱源,且位於加熱器板9〇6和反射器絕緣盤 第58| 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297^^1-- ^^ ---------------------------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 9 1 4之間。加熱器9 0 7係連接到電源9 i 6以供應所需的能 量以加熱加熱器907。熱電耦920最妤位於導管922中, 通過基底908和絕緣盤914,並延伸到加熱器板904中。 熱電耦9 2 0連接到控制器上,也就是下面所要描述的系統 控制器並將測得的溫度提供到控制器。控制器根據所測得 的溫度和所需的退火溫度而增加或減少供應到加熱器9 0 7 的熱量。 圍場90 2最好包括位於圍場902外部的冷卻元件918 和側壁91 0熱接觸以便冷卻圍場902。另外,一或多個冷 卻通道(未顯示出來)則形成於側壁9 1 0中以控制圍場9 0 2 之溫度。冷卻平板913位於頂端912之内部表面上,可冷 卻靠近冷卻平板913的基板。 RTA反應室211包括了位於圍場902之側壁910上的 縱切閥922以輔助基板傳送及傳出rtA反應室。縱切閥92 2 選擇性的密封圍場之側壁9 1 0上的開口 9 2 4,此開口 9 2 4 可和負載站210溝通。見第2圖中負載站傳送機械手臂228 可經由開口 924將基板傳送到和傳送出RTA反應室。 基板支撐栓906最好包含了其末端變細的構件並且由 石英、氧化鋁、碳化矽、或其它耐高溫材料所組成。每個 基板支撐栓906則位於管狀導管926中,此導管由耐熱和 抗氧化的材料所製成且延伸穿過加熱器板904。基板支撐 栓9 0 6乃連接到上升板9 2 8以便以均勻的方式移動此基板 支撐栓906。上升板928則經由上升軸932連接到一促動 器930,如步進馬達上。促動器930移動上升板928以幫 第59頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)Systems), and the cycle power stripper can be obtained from EII. This automatic titration analyzer 615 determines the concentration of inorganic substances such as copper chloride and acid. CVS6 1 7 determines the concentration of organic substances, such as different additives used in the electrolyte solution and by-products produced during the process, both of which are returned from the process chamber to the main tank 602. The analyzer module shown in Figure 6 is just an example. In another embodiment, each analyzer is coupled to the main electrolyte failure tank with a different supply line and is operated by a different controller. Those skilled in the art will appreciate other embodiments. During operation, a sample of the electrolyte solution flows through the sampling line 613 to the analyzer module 616. Although this sample can be taken periodically, it is best to have continuous encapsulation> Valley fluids flow into the analyzer module 6 1 6. A portion of the sample is sent to the automatic titration analyzer 615 and a portion is sent to the CVS617 for proper analysis. The controller 619 initializes the command signals to operate the analyzers 615, 617 and generate data. The information from the chemical composition analyzers 6 and 5 is then passed to the controller 222. The controller 222 processes this message and transmits a signal including a user-defined chemical dose parameter to the feed controller 6 11. The received message is used to provide the operation of one or more valves. Please read the notes on the back before filling out this page) 519677 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. What is desired in the entire electroplating process, and preferably is. The chemical composition of the fixed electrolyte solution. The waste electrolyte solution from the analysis module then flows to the waste treatment system 622 through the outlet line 621. Although the preferred embodiment utilizes Real-time monitoring and adjustment of the electrolyte solution, but different methods can still be used. For example, the feed module 603 can be manually controlled by the operator by observing the output valve provided by the chemical analysis module 6 丨 6. The system software should preferably allow automatic Both the real-time adjustment mode and the operator's manual mode. Furthermore, although multiple controllers are shown in Fig.6, a single controller can also be used to operate different components, such as the chemical analyzer module 616 , Feed module 603, and heat exchanger 6 24. Other embodiments will be apparent to those skilled in the art. 0 Electrolyte solution replenishment system 2 2 0 also includes a connection to the electrolyte solution waste treatment system. 6 2 2 Electrolyte solution waste discharge 6 2 0, in order to safely dispose of electrolyte solution, chemicals and other fluids used in the plating system. The electroplating chamber preferably includes 620 waste electrolyte solution discharge, or electrolyte solution waste The physical treatment system 622 is directly connected to the pipeline. The electrolyte solution waste discharge 620 discharges the electrolyte solution of the plating room without returning to the electrolyte solution replenishing system 2 2 0. The electrolyte solution replenishing system 2 2 0 preferably also includes a squeeze line so that Discard the excess electrolyte solution from the electrolyte solution waste discharge 620. The electrolyte solution replenishment system 220 also includes one or more except for page 55. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). '. -------- ^ --------- (Please read the notes on the back before filling out this page) 519677 Intellectual Property of the Ministry of Economic Affairs Printed by employee consumer cooperative A7 B7 V. Description of the invention () The gas module 630 can remove unwanted gas from the electrolyte solution. The degas module generally contains a membrane to separate the gas generated by the fluid passing through the degas module ' And the real system to remove the released gas. The degassing module 6 3 0 is best placed on the electrolyte solution supply line 61 2 near the process chamber 24 0. The degassing module is preferably as close to the process chamber as possible. 24〇 Therefore, most of the gas from the electrolyte solution replenishment system can be removed by the degassing module before the electrolyte solution enters the process chamber. Each degassing module preferably includes two outlets to supply the degassed electrolyte The solution goes to the two process chambers 2 4 0 of each process station 2 8. In addition, a degassing module 630 can also be supplied to each process room. This degassing module can be placed in many different positions. For example, this degassing module can be placed in different locations in the electrolyte solution replenishment system, such as along the filter section or in a closed loop system with the main tank or process chamber. In another embodiment, a degassing module is located on the line of the electrolyte solution supply line 6 12 to provide the degassed electrolyte solution to all the process chambers 240 of the electron-chemical deposition system. In addition, a different degassing module is located on the line of the deionized water supply line or in a closed loop to remove oxygen from the deionized water source. Since deionized water is used to clean the process substrate, free oxygen is best removed before the deionized water reaches the SRD module, so the copper electroplated metal is less likely to be oxidized during the cleaning process. The degassing module is a well-known technology and commercial implementation can be easily obtained and used in different applications. Commercially available degassing modules are from Millipore, located in Bedford, Massachusetts. An example of the degassing module 630 shown in FIG. 26a includes a water-repellent film 6 3 2 with a fluid (ie, an electrolyte solution), a passage page 56. The paper size is applicable to the Chinese National Standard (CNS) A4 Specifications (210 X 297 public love) -------! · Install -------- order --------- Φ (Please read the precautions on the back before filling this page) 519677 A7 B7 I —.... — 5. Explanation of the invention () 6 3 4 is on one side of the film 6 3 2. The vacuum system 6 3 6 is arranged on the other side of the film. The degassing module seal 638 includes an inlet 640 and one or more outlets 642. When the electrolyte solution passes through the degassing module 630, the gas and other microbubbles in the electrolyte solution are separated from the electrolyte solution by the drainage film and removed by the vacuum system. Another embodiment of the degassing module 630 ', as shown in Fig. 26b, includes a tubular drainage film 632, and a true system 6 3 6 ^ electrolyte solution system arranged around the tubular drainage film 6 3 2 It is introduced into the tubular drainage membrane, and the electrolyte solution passes through the fluid passage 6 3 4 in the tube. The water-repellent membrane separates the gas in the electrolyte solution from other microbubbles, and the pipe is connected to a vacuum system 6 3 6 to remove the separated gas. More complex degassing module designs have also been carefully considered, including electrolyte solution designs with curved paths through the membrane and other multi-stage degassing modules. Although not shown in Figure 16 ', the electrolyte solution replenishing system 2 2 0 also includes some different components. For example, the electrolyte solution replenishment system 220 preferably also includes one or more additional chemical storage tanks as a substrate cleaning system, such as an SRD station. Double pipelines can also be used to connect hazardous materials to provide safe transfer of chemicals throughout the system. Alternatively, this electrolyte solution replenishing system 220 may also include an electrolyte solution processing system connected to an additional or external source to supply additional electrolyte solution to the plating system. Figure 17 is a schematic cross-sectional view of one embodiment of a rapid thermal annealing (RTA) reaction chamber. The RTA reaction chamber 211 is preferably connected to the load station 210, and the substrate is transferred into and out of the RTA reaction chamber using the load station transfer robot arm 228. The paper size applies to Chinese National Standard (CNS) A4 specification (21〇χ297 (Please read the precautions on the back before filling out this page) Zero-loading --- tr --------- Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 519677 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics A7 B7 V. Description of the invention () 211. The plating system shown in Figures 2 and 3 preferably includes two RTA reaction chambers 211 placed on both sides of the load station 210, which is equivalent to the symmetrical design of the load station 210. The RTA reaction chamber is generally a known technology, and the general RTA reaction chamber is used to enhance the properties of the deposition material in the substrate processing system. A variety of RTA reaction chamber designs, including hot plate design and hot light bulb design, can be used to enhance the plating results. One of the particularly useful RTA reaction chambers is the WxZ reaction chamber, available from Applied materials, Inc., Santa Clara, California. Although described herein as hot-plate RTA reaction chambers, other RTAs The reaction chamber can also be used. The RTA reaction chamber 211 generally includes a pad 902, a heater plate 904, a heater 907, and a plurality of substrate support bolts 906. The pad 902 includes a base 908, a side wall 910, and a top 912. The cooling plate 913 is most It is located below the top 912 of the paddock. In addition, the cold slab can also be integrated into a part of the top 9 2 of the paddock. The reflector insulation plate 9 1 4 is most positioned above the base 908 in the paddock 9 02. This reflector Insulation plate 914 is generally made of quartz, aluminum or other materials that can withstand high temperatures (greater than about 50 ° C). This reflector insulation plate is used as a thermal insulation between the heater 9 07 and the paddock 9 02 The insulating disc 914 can also be plated with a layer of reflective material such as gold in order to conduct heat back to the heater plate 906. The heater plate 904 has a larger mass compared to the substrate processed in the system. The heater plate is best Made of, for example, silicon carbide, quartz, or other materials that do not react with the surrounding gas or with the substrate material in the RTA reaction chamber 211. The heater 907 generally includes a resistive heating element or a conductive / radiative heating source And located on heater board 9 6 和 Reflector Insulating Disk No. 58 | This paper size applies to China National Standard (CNS) A4 (210 X 297 ^^ 1-- ^^ ------------------ ---------- (Please read the notes on the back before filling out this page) 519677 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of Invention () 9 1 4 The heater 9 0 7 is connected to a power source 9 i 6 to supply the required energy to heat the heater 907. The thermocouple 920 is most located in the duct 922, passes through the base 908 and the insulating disc 914, and extends into the heater plate 904. The thermocouple 9 2 0 is connected to the controller, which is the system controller described below and provides the measured temperature to the controller. The controller increases or decreases the amount of heat supplied to the heater 907 based on the measured temperature and the required annealing temperature. The paddock 90 2 preferably includes a cooling element 918 located outside the paddock 902 and a sidewall 9 10 in thermal contact to cool the paddock 902. In addition, one or more cooling channels (not shown) are formed in the side wall 9 10 to control the temperature of the paddock 90 2. The cooling plate 913 is located on the inner surface of the top plate 912, and can cool the substrate near the cooling plate 913. The RTA reaction chamber 211 includes a slit valve 922 on the side wall 910 of the enclosure 902 to assist substrate transfer and transfer from the rtA reaction chamber. The slit valve 92 2 selectively seals the opening 9 2 4 on the side wall 9 1 0 of the paddock. This opening 9 2 4 can communicate with the load station 210. See Figure 2. The load station transfer robot 228 can transfer substrates to and from the RTA reaction chamber through the opening 924. The substrate support bolt 906 preferably includes a member having a tapered end and is composed of quartz, alumina, silicon carbide, or other high temperature resistant materials. Each substrate support peg 906 is located in a tubular conduit 926, which is made of a heat and oxidation resistant material and extends through the heater plate 904. The substrate supporting pin 906 is connected to the rising plate 9 2 8 so as to move the substrate supporting pin 906 in a uniform manner. The rising plate 928 is connected to an actuator 930, such as a stepping motor, via a rising shaft 932. Actuator 930 moves the rising plate 928 to help Page 59 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
It--- tr--------- 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 助基板在RTA反應室中不同的垂直位置上定位。上升軸 932延伸穿過圍場902之基底908並由位於軸心周圍之密 封凸緣934加以密封。 若要傳送基板到RTA反應室211中,縱切閥922將會 開啟,而負載站傳送機械手臂2 2 8則延伸其上具有基板之 機械葉片經由開口 924到RTA反應室中。負載站傳送機械 手臂228之械械葉片將基板放置在RTA反應室中的加熱器 板904上,且基板支撐栓906往上延伸以便從機械葉片舉 起基板。機械葉片接著縮回離開RTA反應室,縱切閥922 則將開口關閉。基板支撐栓9 0 6接著回縮降低基板到加熱 器板9 0 4上所需的位置。選擇性地,基板支撐栓9 0 6可完 全回縮而將基板直接和加熱器板接觸。 氣體入口 936最好配置穿過圍場90 2之側壁910,以 便在退火處理製程時所選擇的氣體可流入RTA反應室 2 11。此氣體入口 9 3 6經由閥門9 4 0連接到氣體源9 3 8以 便控制流入RTA反應室211之氣體。氣體出口 942則最好 配置於圍場902之側壁的下半部分以便排出RTA反應室的 氣體。此氣體出口最好連接到一釋放/檢查閥944以避免 大氣由反應室外回流到室内。選擇性地,此氣體出口 942 可連接到真空幫浦(未顯示出來)以在退火製程時將RTA反 應室抽取到所需的真空度。 基板在電鍍室中電鍍完成並在SRD站清潔之後,接著 將在RTA反應室211中進行退火。此RTA反應室211最好 維持約大氣壓力下,且在退火處理製程時RTA反應室211 第60頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 _______B7__ 五、發明說明() 中氧氣的含量需控制在小於約lOOppm。RTA反應室21 1中 的周圍環境最好包含了氮氣(NO或氮氣(N2)之組合及小於 約4%的氫氣(HO。流入RTA反應室211之氣體維持在大於 2 0升/分鐘以便控制氧氣含量小於1 〇 〇ppm。已經電鍍的基 板最好在約2 0 0 °C和約4 5 0 °C的溫度之間退火約3 0秒和3 0 分鐘之間,且最佳是在約2 5 0 °C和約4 0 0 °C之間退火約1 分鐘和5分鐘之間。RTA製程一般需要每秒增加至少5 0 °C 之溫度。為了提供基板在退火處理時所需的溫度增加速 率,加熱器板最好維持在約35ITC和450°C之間。在退火 處理製程中,基板最好放置在距離加熱器板(也就是和加 熱器板互相接觸)約〇 m m和約2 0 m m之間的位置。控制器2 2 2 可控制RTA反應室2 11之操作,包括了維持rt A反應室中 所需的周邊環境和加熱器板之溫度。 退火處理製程完成之後,基板支撐栓906將基板舉起 以便將其傳送到RTA反應室2 11之外。縱切閥922打開, 負載站傳送機械手臂228之機械葉片伸入RTA反應室中並 置於基板之下。基板支撐栓906縮回而將基板置於機械葉 片上’接著機械葉片伸出RTA反應室之外。負載站傳送機 械手臂2 2 8接著傳送已處理過的基板到卡失2 3 2中以便移 出電鍍製程系統(見第2和第3圖)。 回頭參關第2圖,電鍍系統平台200包括了控制器222 以控制平台之每個元件的功能。此控制器222最好放置在 王架構21 4之上,且此控制器包含了可程式化的微處理 器。此可程式化的微處理器一般利用特別為了控制電鍍系 第61頁 --I----I------I----^ 0 I------- (請先閱讀背面之注意事項再填寫本頁) Μ ΜIt --- tr --------- 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The auxiliary substrate is positioned at different vertical positions in the RTA reaction chamber. The ascending shaft 932 extends through the base 908 of the enclosure 902 and is sealed by a sealing flange 934 located around the shaft center. To transfer the substrate to the RTA reaction chamber 211, the slitting valve 922 will be opened, and the load station transfer robot 2 2 8 will extend the mechanical blade with the substrate thereon to the RTA reaction chamber through the opening 924. The load station conveys the robot. The mechanical blade of the arm 228 places the substrate on the heater board 904 in the RTA reaction chamber, and the substrate support pin 906 extends upward to lift the substrate from the mechanical blade. The mechanical blade then retracts away from the RTA reaction chamber, and the slit valve 922 closes the opening. The substrate support pin 9 0 6 is then retracted to lower the substrate to a desired position on the heater plate 9 0 4. Alternatively, the substrate support bolt 906 can be fully retracted to directly contact the substrate with the heater board. The gas inlet 936 is preferably configured to pass through the side wall 910 of the pad 90 2 so that the gas selected during the annealing process can flow into the RTA reaction chamber 2 11. This gas inlet 9 3 6 is connected to a gas source 9 3 8 via a valve 9 40 to control the gas flowing into the RTA reaction chamber 211. The gas outlet 942 is preferably disposed in the lower half of the side wall of the paddock 902 to discharge the gas from the RTA reaction chamber. This gas outlet is preferably connected to a release / check valve 944 to prevent the atmosphere from flowing back into the room from outside the reaction chamber. Optionally, this gas outlet 942 can be connected to a vacuum pump (not shown) to draw the RTA reaction chamber to the required vacuum level during the annealing process. After the substrate is plated in the plating chamber and cleaned at the SRD station, it is then annealed in the RTA reaction chamber 211. The RTA reaction chamber 211 is preferably maintained at about atmospheric pressure, and the RTA reaction chamber 211 during the annealing process page 60. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- ------ Equipment -------- Order --------- (Please read the precautions on the back before filling this page) 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs _______B7__ 5. Description of the invention () The oxygen content in () should be controlled to less than about 100ppm. The surrounding environment in the RTA reaction chamber 21 1 preferably contains a combination of nitrogen (NO or nitrogen (N2) and less than about 4% hydrogen (HO. The gas flowing into the RTA reaction chamber 211 is maintained at more than 20 liters / minute for control. The oxygen content is less than 1000 ppm. The plated substrate is preferably annealed at a temperature between about 200 ° C and about 450 ° C for about 30 seconds and 30 minutes, and most preferably at about Annealing between 2 50 ° C and about 4 0 ° C for about 1 minute and 5 minutes. RTA processes generally require an increase in temperature of at least 50 ° C per second. In order to provide the temperature required for the substrate during the annealing process Increasing the rate, the heater board is preferably maintained between about 35 ITC and 450 ° C. During the annealing process, the substrate is preferably placed at a distance of about 0 mm from the heater board (that is, in contact with the heater board) and about 2 The position between 0 mm. The controller 2 2 2 can control the operation of the RTA reaction chamber 2 11, including maintaining the required ambient environment and the temperature of the heater board in the rt A reaction chamber. After the annealing process is completed, the substrate support The peg 906 lifts the substrate to transfer it out of the RTA reaction chamber 2 11. Slitting valve 922 opens, the mechanical blade of the load station transfer robot arm 228 extends into the RTA reaction chamber and is placed under the substrate. The substrate support bolt 906 retracts and places the substrate on the mechanical blade 'and then the mechanical blade extends out of the RTA reaction chamber. The load station transfers the robotic arm 2 2 8 and then transfers the processed substrate to the card 2 2 2 for removal from the plating process system (see Figures 2 and 3). Referring back to Figure 2, the plating system platform 200 includes The controller 222 controls the functions of each component of the platform. The controller 222 is preferably placed on the King frame 21 4 and the controller includes a programmable microprocessor. The programmable microprocessor General use is specially for the control of electroplating. Page 61--I ---- I ------ I ---- ^ 0 I ------- (Please read the precautions on the back before filling in this (Page) Μ Μ
MI 3— MI I A7MI B7 「囬册描述如第2圖中所 五、發明說明() 統平台20 0之所有元件的軟體加以程式化。控制器222也 提供了系統元件的電力且包括了控制面板2 2 3以便操作者 監視並操作此電鍍系統平台200。如第2圖中所示的控制 面板2 2 3為一獨立的模組,並經由電纜線連接到控制器 222且提供操作者操作上的便利性。一般說來,控制器222 協調負載站210、RTA反應室211、SRD站212、主架構214 和製程站218之操作。另外,控制器222可協調電解質溶 液補充系統2 2 0之控制器以供應電解質溶液到電鍍製程 中。 典型的基板電鍍製程程序。裝有複數片基板之基板卡夹先 載入電鍍系統平台200之負載站210中的基板卡夾接收區 224中。負載站傳送機械手臂228由基板卡夾中的基板槽 中取出基板並將其置放在基板***23〇上。基板*** 2 3 0可決定並將基板轉到所需的方位上以便在整個系統中 進灯處理。負載站傳送機械手臂228接著由基板*** 230傳送已定位之基板並置放在SRD# 212之基板通過卡 夾238的其中一個基板槽中。主架構傳送機械手冑⑷由 基板通過卡夾238取出基板並置放基板以便蹼狀械機手臂 248來傳送。蹼狀機械手臂m轉動其機械葉片到基板之 下,由主架構傳送機械葉片取出基板。在蹼狀機械葉片上 的真玄吸取握爪可將基板固定在蹼狀機械葉片丨,且此蹼 狀機械手臂將基板由表面朝上的位 pi 夏糊轉成表面朝下的 位置。蹼狀機械手臂248轉動 文此表面朝下的基板於 第62頁 --------^--------- (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) 519677 A7 Β7 部 智 消 費 五、發明說明( 基板承載座組合450中。基板位於基板承載座464之下但 在陰極接觸環466之上。蹼狀機械手臂248接著釋放基板 以置放基板到陰極接觸環466中。基板承載座464往基板 移動且真空夾盤將基板固定在基板承載座464上。在基板 承載座組合450上的囊狀組合47〇施加壓力到基板背面以 確保基板電鍍表面和陰極接觸環466之間的電性接觸。 頭邵組合452將降低到製程室42〇之上的處理位置。 於此位置基板乃在環狀堰478之上平面之下並和製程室 420中的電解質落液接觸。電源供應器啟動後供應電壓和 電流到陰極和陽極以產生電鍍製程。在電鍍製程中電解質 溶液一般會連續的加入製程室中。供應到陰極和陽極的電 功率和電解質溶液的流動均由控制器222加以控制。頭部 組合降下時和電鍍製程時最好此頭部組合也會轉動。 當電鍍製程完成時,頭部組合41 〇舉起基板承載座組 合並由電解質溶液中移除基板。頭部組合最好轉動一段時 門加速殘餘I解質溶液由基板承載座組合中移除。基板 承載厘<真空夾盤和囊狀組合接著由基板承載座釋放基 板基板承載座上升可讓蹼狀機械手臂葉片由陰極接觸環 取出處理後的基板。蹲狀機械手臂在陰極接觸環中處理後 的基板背面上轉動蹼狀機械葉片,然後利用蹼狀機械葉片 上的真2吸取握爪取出基板。蹲狀機械手臂在基板離開基 板承載座組合後轉動蹼狀機械葉片,並將基板由表面朝下 轉成表面朝上的位置,並將基板置放在主架構傳送機械葉 片上。主架構傳送機械手臂接著將處理後的基板傳送並置 第63頁 本紙張尺度適财國國家標準(CNS;A4規格(21() χ 2犯公[ ·裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁)MI 3— MI I A7MI B7 "The description of the booklet is as shown in Figure 2. V. Invention Description () The software of all components of the system platform 200 is programmed. The controller 222 also provides power to the system components and includes control Panel 2 2 3 for the operator to monitor and operate the plating system platform 200. The control panel 2 2 3 shown in Figure 2 is an independent module and is connected to the controller 222 via a cable and provides operator operation In general, the controller 222 coordinates the operations of the load station 210, the RTA reaction chamber 211, the SRD station 212, the main frame 214, and the process station 218. In addition, the controller 222 can coordinate the electrolyte solution replenishment system 2 2 0 The controller supplies the electrolyte solution to the electroplating process. Typical substrate electroplating process. The substrate clips with a plurality of substrates are first loaded into the substrate clip receiving area 224 in the load station 210 of the electroplating system platform 200. The load The station transfer robot 228 takes the substrate out of the substrate slot in the substrate holder and places it on the substrate positioner 23. The substrate positioner 2 30 can decide and turn the substrate to the desired orientation so that The light is processed in the entire system. The load station transfer robot arm 228 then transfers the positioned substrate from the substrate positioner 230 and places it in one of the substrate slots of the substrate pass SRD 212 of the SRD # 212. The main structure transfer robot 胄取出 Remove the substrate from the substrate through the clip 238 and place the substrate for transfer by the webbed robot arm 248. The webbed robot arm m rotates its mechanical blade below the substrate, and the main frame transfers the mechanical blade to take out the substrate. In the webbed mechanical blade The mysterious suction gripper on the upper part can fix the substrate to the web-shaped mechanical blade, and this web-shaped robot arm turns the substrate from the surface-up position pi to the surface-down position. The web-shaped robotic arm 248 rotates the text The substrate with this surface facing down is on page 62 -------- ^ --------- (Please read the precautions on the back before filling out this page) The paper size of the paper is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 519677 A7 Β7 Ministry of Consumer Affairs 5. Description of the invention (in the substrate holder combination 450. The substrate is located below the substrate holder 464 but in the shade Above the pole contact ring 466. The web-like robot arm 248 then releases the substrate to place the substrate into the cathode contact ring 466. The substrate carrier 464 moves toward the substrate and the vacuum chuck secures the substrate to the substrate carrier 464. On the substrate carrier The capsule assembly 47 on the seat assembly 450 applies pressure to the back of the substrate to ensure electrical contact between the plated surface of the substrate and the cathode contact ring 466. The head Shao assembly 452 will be lowered to a processing position above the process chamber 42. The substrate at this position is below the plane above the annular weir 478 and is in contact with the electrolyte falling liquid in the process chamber 420. After the power supply starts, it supplies voltage and current to the cathode and anode to produce a plating process. The electrolyte solution is generally continuously added to the process chamber during the plating process. The electric power supplied to the cathode and the anode and the flow of the electrolyte solution are controlled by the controller 222. When the head assembly is lowered and during the plating process, it is preferable that the head assembly also rotates. When the electroplating process is completed, the head assembly 41 lifts the substrate carrier assembly and removes the substrate from the electrolyte solution. The head assembly is preferably rotated for a period of time to remove the residual I-degrading solution from the substrate carrier assembly. Substrate bearing centimeter < vacuum chuck and bladder combination is then released by the substrate carrier. The substrate substrate carrier rises to allow the web-shaped robot arm blade to take out the processed substrate from the cathode contact ring. The squat robotic arm rotates the webbed mechanical blade on the back of the substrate processed in the cathode contact ring, and then uses the true 2 suction gripper on the webbed mechanical blade to remove the substrate. The squat robotic arm rotates the webbed mechanical blade after the substrate leaves the combination of the substrate bearing seat, and turns the substrate from the surface down to the surface up position, and places the substrate on the main frame transfer mechanical blade. The main structure transfer robotic arm then transfers and aligns the processed substrates. Page 63 The paper size is suitable for national standards of the country (CNS; A4 specifications (21 () χ 2 criminals [· 装 -------- Order- -------- (Please read the notes on the back before filling this page)
I 519677I 519677
、發明說明( 經 濟 部 智 彗 •以 財 產 局 員 工 消 費 合 社 印 製 放在SRD模組236之上。SRD基板承載座舉起基板,主架 構傳送機械葉片則由SRD模組236抽回。接著利用去離子 水或上面所描述的去離子水和清潔液之組合在SRD模組中 ⑺’絮基板。然後即準備將基板由模組中移走。負載站 傳送機械手臂228由SRD模組236中取出基板並將處理後 的基板傳迗到RTA反應室2 11中進行退火處理製程以加強 沉積材料之特性。退火後的基板接著再由負載站機械手臂 2 28傳送到RTA反應室211外面並放回基板卡夾中以便由 電鍍系統中移除。上㊆所描㉟的程彳可以複數片基板同時 在電鍍系統平台20 0中執行。電鍍系統可調整為提供多個 堆登之基板處理。 孔洞1 920和真空埠841以流體互相溝通,以利用加 到基板底面的真空吸力來t助固定基板到基板承載座 上。依照頭部部分之另一實施例,可膨脹之囊袋並不直接 和處理中的基板互相接觸,因此在基板傳送時切割或損害 到可膨脹之囊袋的危險性可有效的降低。彈性的〇型^ 1 91 6最好加以鍍層或處理以提供親水性表面,如同上面所 討論的對於電性接觸元件之表面的處理,以便接觸基板。 彈性的0型環1916可視需要而更換以確保基板適度的接 觸和密封性。 於-實施例中,沉積薄膜的均勻性已經改善到約2% 之内,也就是說’沉積薄膜厚度之最大偏移為平均薄膜厚 度的2%左右,而標準電鍍製程一般所達到的均句度最好在 約5. 5 %以内。頭部組合之轉動在某些例子中並不一定會達 第64| 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 到均勻的電鍍沉積。特別是在電鍍沉積之均勻度藉由調整 製程參數就可達到的例子更是不需要轉動,製程參數例如 電解質溶液化學、電解質溶液流動和其它的參數等。 再回頭參閱第6圖,電鍍製程室400之截面示圖中, 頭部部分450位於製程室420之上。製程室420 —般包含 碗狀物430,容器本體472,陽極組合474和過濾器476。 陽極組合474最好位於容器本體472之下並接到容器本體 472之下半部,過濾器476則位於陽極組合474和容器本 體472之間。容器本體472最好為包含了電性絕緣材料之 圓柱形禮,如陶瓷、塑膠、PLEXIGUS⑧(丙烯酸)、lexane、 PVC、CPVC、和PVDF。另外,容器本體472可由金屬所製 成,例如不銹鋼、鎳和鈦,並鍍上一層絕緣層,例如 TEFLON®、PVDF、塑膠、橡膠和材料的其它組合,其不溶 解於電解質落液且和電極為電性上絕緣,也就是和ECD系 統之陽極和陰極。容器本體472之大小最好可調適成適合 基板電鍍表面和整個系統所處理之基板的形狀,基板的形 狀一般不是圓形就是矩形。容器本體472之一較佳實施例 包含了圓柱形陶瓷管其内部直徑約為或大於基板之直 徑。發明人發現到當容器本體之尺寸調整成約為基板電鍍 表面的尺寸時,典型的ECD系統中要達到均勻電鍍結果所 需要的轉動便不需要了。 谷器本體472 4上半部分徑向往外延伸以形成環狀堰 478。環狀堰478延伸超過電解質溶液收集器44〇之内壁 446,並讓電解質溶液流入電解質溶液收集器44〇中。環 第65頁 --------------------訂--------- (請先閱讀背面之>i意事項再填寫本頁) 519677 A7Description of the invention (Ministry of Economy Zhihui • Printed on the SRD module 236 with the property consumer cooperative of the Property Bureau. The SRD substrate carrier lifts the substrate, and the main structure transfer mechanical blade is withdrawn by the SRD module 236. Then Use deionized water or the combination of deionized water and cleaning solution described above to bounce the substrate in the SRD module. The substrate is then ready to be removed from the module. The load station transfer robot 228 is provided by the SRD module 236 The substrate is taken out, and the processed substrate is transferred to the RTA reaction chamber 2 11 for an annealing process to enhance the characteristics of the deposited material. The annealed substrate is then transferred by the load station robot arm 2 28 to the outside of the RTA reaction chamber 211 and Put it back into the substrate holder for removal by the plating system. The process described above can be executed on the plating system platform 200 at the same time. The plating system can be adjusted to provide multiple stacked substrate processing. The holes 1 920 and the vacuum port 841 communicate with each other in fluid, so as to use a vacuum suction force applied to the bottom surface of the substrate to help fix the substrate to the substrate carrier. According to another implementation of the head part For example, the expandable pouch does not directly contact the substrate in process, so the risk of cutting or damaging the expandable pouch during substrate transfer can be effectively reduced. The elastic type 0 ^ 1 91 6 is best Coated or treated to provide a hydrophilic surface, as discussed above for the surface treatment of electrical contact elements, so as to contact the substrate. The flexible 0-ring 1916 can be replaced as necessary to ensure proper contact and sealing of the substrate. -In the embodiment, the uniformity of the deposited film has been improved to within about 2%, that is, the maximum deviation of the thickness of the deposited film is about 2% of the average film thickness, and the average degree of uniformity achieved by standard plating processes is generally It is best to be within about 5.5%. The rotation of the head combination may not necessarily reach the 64th in some examples | This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^- ------ ^ --------- (Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of invention () To uniform Electroplating. Especially in For example, the uniformity of the plating deposition can be achieved by adjusting the process parameters without turning, and process parameters such as electrolyte solution chemistry, electrolyte solution flow, and other parameters. Referring back to FIG. 6, the section of the plating process chamber 400 In the figure, the head portion 450 is located above the process chamber 420. The process chamber 420 generally includes a bowl 430, a container body 472, an anode assembly 474, and a filter 476. The anode assembly 474 is preferably located below the container body 472 and Connected to the lower half of the container body 472, the filter 476 is located between the anode assembly 474 and the container body 472. The container body 472 is preferably a cylindrical gift containing electrical insulating materials, such as ceramic, plastic, PLEXIGUS⑧ (acrylic ), Lexane, PVC, CPVC, and PVDF. In addition, the container body 472 can be made of metal, such as stainless steel, nickel, and titanium, and plated with an insulating layer, such as TEFLON®, PVDF, plastic, rubber, and other combinations of materials, which are insoluble in electrolyte dripping and electrodes It is electrically insulated, that is, anode and cathode of the ECD system. The size of the container body 472 is preferably adjusted to suit the shape of the substrate plating surface and the substrate processed by the entire system. The shape of the substrate is generally either circular or rectangular. A preferred embodiment of the container body 472 includes a cylindrical ceramic tube having an internal diameter of about or greater than the diameter of the substrate. The inventors have discovered that when the size of the container body is adjusted to approximately the size of the plated surface of the substrate, the rotation required to achieve a uniform plating result in a typical ECD system is not required. The upper part of the trough body 4724 extends radially outward to form an annular weir 478. The annular weir 478 extends beyond the inner wall 446 of the electrolytic solution collector 44o, and allows the electrolytic solution to flow into the electrolytic solution collector 44o. Page 65 -------------------- Order --------- (Please read the > i notice on the back before filling in this page) 519677 A7
五、發明說明() 經濟部智慧財產局員工消費合作社印製 狀堰478之上表面最好可和電性接觸環466之下表面互相 配合。此環狀堰478之上表面最好包括了内部環狀平坦部 分480、中間傾斜部分482和外部傾斜部分_。當基板 放置於製程位置中時,基板電鍍表面放置於容器本體 之圓柱狀開口之上。在電性接觸$ 466之下表面和環形堰 478之上表面之間形成一缝隙以讓電解質溶液流過。電性 接觸環466之下表面置放於環狀堰478之内部平坦部分 480和中間傾斜部分之上。外部傾斜部分484則往下傾斜 以幫助電解質溶液流入電解質溶液收集器44〇中。 容器本體472之下半部分放射狀往外延伸以形成下半 部環狀凸緣486以將容器本體472和碗狀物43〇固定在一 起。環狀凸緣4 8 6之外部尺寸(也就是圓周)要小於開口 444之尺寸和電解質溶液收集器44〇之内部圓周。此環狀 凸緣486可讓製程室420由電鍍製程室40 0中移除和替 換。複數個螺栓488則最妤配置固定在環狀凸緣486之 上,透過碗狀物430上的螺栓孔往下延伸固定。複數個可 移動的固定螺帽490則將製程室420固定在碗狀物430 上。一種例如彈性0型環之密封環487則位於容器本體472 和碗狀物430之間和螺栓488的内側以避免製程室420之 洩露。螺帽/螺栓的組合可讓製程室4 2 0在維修時快速且 容易的移動並替換零件。 過濾器476最好裝在且完全的覆蓋住容器本體472的 下半開口,且陽極組合474位於過濾器476之下。側壁492 則位於過濾器476和陽極組合474之間。過濾器476、側 第66頁 _本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------•裝--------訂---------· (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 壁492和陽極組合474最好以可移動的扣件,如螺釘及/ 或螺栓固定在容器本體472的下半表面❹另外,此過濾器 4 7 6、侧壁4 9 2和陽極組合4 7 4也可移動式的固定在碗狀 物430上。 陽極組合474最妤包含一消耗性陽極以作為電解質溶 液中的金屬來源。另外,陽極組合474也可包含一不會消 耗之陽極,而欲電鍍之金屬則由電解質溶液補充系統22〇 所供應之電解質溶液來提供。如第6圖中所示的,陽極組 合474為一自我封閉型模組,其具有多孔的陽極圍場494 且最妤由欲電鍍之金屬所製成,例如銅金屬。另外,此陽 極圍場494也可由多孔的材料如陶瓷或聚合薄膜所製成。 一可溶解金屬496,例如電化學沉積銅金屬之高純度銅, 則放置於陽極圍場494之中。此可溶解金屬496最好包含 金屬粒子、金屬線或穿孔之薄板等。此多孔的陽極圍場494 之作用也如同過/慮器,可留住陽極圍場494中溶解金屬 所產生的微粒。和不會消耗的陽極比較起來,會消耗的(也 就是會落解的)陽極提供了不會產生氣體之電解質溶液並 降低了電解質溶液中經常補充金屬的需求。 一陽極電性接點498乃經由陽極圍場494***以提供 可溶解金屬496來自電源供應器的電性連接。此陽極電性 接點498由不會在電解質溶液中溶解的導電材料所製成, 如鈦、鉑和具鉑鍍層的不銹鋼。陽極電性接點498延伸到 碗狀物430之外並連接到電源供應器上。此陽極電性接點 498最妤包含了螺紋部分497和密封環495。固定螺帽499 第67頁 本紙張尺度適用中國國ϋ準(CNS)A4規格(210 X 297公爱) -* -- -----------裝--------訂--------- (請先閲讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 之螺紋部分可用來將陽極電性接點498固定在碗狀物430 上。一種例如彈性襯墊之密封環4 9 5則位於固定螺帽4 9 9 和碗狀物4 3 0之間以避免來自製程室4 2 0的淺露。 碗狀物430 —般包含了圓柱部分502和底面部分 5 0 4。上半部環狀凸緣5 0 6由圓柱部分5 0 2之頂端徑向往 外延伸。上半部環狀凸緣5 0 6包括了複數個孔洞5 0 8以搭 配容器本體472之下半部環狀凸緣486的螺栓488數目。 螺栓488穿過孔洞508,且固定螺帽490鎖在螺栓488上 以固定碗狀物430之上半部環狀凸緣506和容器本體472 之下半部環狀凸緣486。上半部環狀凸緣506之外部尺寸, 也就是其周長,最好約和下半部環狀凸緣486之外部尺 寸,也就是其周長,為相同的。當製程室420位於主架構 214上時,碗狀物430之上半部環狀凸緣5〇6的下半部表 面置於主架構214之支撐凸緣上。 圓柱部分5 0 2之内部圓周則容納了陽極組合$ 7 4和過 滤器4 7 6。過滤器4 7 6和陽極組合4 7 4之外部尺寸略小於 圓柱部分5 0 2之内部尺寸。這些相對尺寸可促使大部分的 電解質溶液在流經過濾器4 7 6之前首先流過陽極組合 474。碗狀物430之底面部分504包括了電解質溶液入口 510 ’其連接到電解質溶液補充系統220之電解質溶液供 應線路上。陽極組合4 7 4最好放在碗狀物4 3 0之圓柱部分 502的中間部分。此陽極組合474的結構可提供一縫隙作 為陽極組合474和底面部分504上之電解質溶液入口 51〇 之間的電解質溶液流動。 第68頁V. Description of the invention () The upper surface of the weir 478 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs should preferably be matched with the lower surface of the electrical contact ring 466. The upper surface of the annular weir 478 preferably includes an inner annular flat portion 480, a middle inclined portion 482, and an outer inclined portion. When the substrate is placed in the process position, the plated surface of the substrate is placed over the cylindrical opening of the container body. A gap is formed between the lower surface of the electrical contact $ 466 and the upper surface of the annular weir 478 to allow the electrolyte solution to flow through. The lower surface of the electrical contact ring 466 is placed on the inner flat portion 480 and the middle inclined portion of the annular weir 478. The outer inclined portion 484 is inclined downward to help the electrolyte solution flow into the electrolyte solution collector 44o. The lower half of the container body 472 extends radially outward to form a lower half annular flange 486 to fix the container body 472 and the bowl 43 together. The outer dimensions (ie, the circumference) of the annular flange 4 8 6 are smaller than the size of the opening 444 and the inner circumference of the electrolyte solution collector 44o. This annular flange 486 allows the process chamber 420 to be removed and replaced from the electroplating process chamber 400. The plurality of bolts 488 are arranged on the annular flange 486 at the top, and are fixed downward through the bolt holes in the bowl 430. A plurality of movable fixing nuts 490 fix the process chamber 420 on the bowl 430. A sealing ring 487, such as an elastic O-ring, is located between the container body 472 and the bowl 430 and the inside of the bolt 488 to prevent leakage of the process chamber 420. The nut / bolt combination allows the process room 40 to quickly and easily move and replace parts during maintenance. The filter 476 is preferably installed and completely covers the lower half opening of the container body 472, and the anode assembly 474 is located under the filter 476. The side wall 492 is located between the filter 476 and the anode assembly 474. Filter 476, side page 66_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- • Installation -------- Order --------- · (Please read the notes on the back before filling this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Wall 492 and anode combination 474 are best Removable fasteners, such as screws and / or bolts, are fixed to the lower half of the container body 472. In addition, the filter 4 7 6, side wall 4 9 2 and anode combination 4 7 4 can also be fixed to the On the bowl 430. The anode assembly 474 includes a consumable anode as a source of metal in the electrolyte solution. In addition, the anode assembly 474 may also include an anode that does not consume, and the metal to be plated is provided by the electrolyte solution supplied by the electrolyte solution replenishing system 22. As shown in Fig. 6, the anode assembly 474 is a self-enclosed module, which has a porous anode pad 494 and is made of a metal to be electroplated, such as copper metal. Alternatively, the anode pad 494 may be made of a porous material such as a ceramic or polymer film. A soluble metal 496, such as high-purity copper of electrochemically deposited copper metal, is placed in the anode pad 494. The dissolvable metal 496 preferably contains metal particles, metal wires or perforated sheets. The porous anode pad 494 also functions as a filter / retainer, and can retain particles generated by dissolved metals in the anode pad 494. Compared with non-consumable anodes, consumable (ie, disintegrated) anodes provide an electrolyte solution that does not generate gas and reduces the need for frequent metal replenishment in the electrolyte solution. An anode electrical contact 498 is inserted through the anode pad 494 to provide an electrical connection of the dissolvable metal 496 from the power supply. The anode electrical contact 498 is made of a conductive material that does not dissolve in the electrolyte solution, such as titanium, platinum, and stainless steel with platinum plating. The anode electrical contact 498 extends beyond the bowl 430 and is connected to the power supply. The anode electrical contact 498 includes a threaded portion 497 and a seal ring 495. Fixed nut 499 page 67 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love)-*------------ install ------- -Order --------- (Please read the notes on the back before filling out this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. The threaded part of the invention description () can be used for the anode The electric contact 498 is fixed on the bowl 430. A sealing ring 4 9 5 such as an elastic gasket is located between the fixing nut 4 9 9 and the bowl 4 3 0 to avoid light exposure from the process chamber 4 2 0. The bowl 430 generally includes a cylindrical portion 502 and a bottom portion 504. The upper half annular flange 50 6 extends radially outward from the top end of the cylindrical portion 50 2. The upper half annular flange 506 includes a plurality of holes 508 to match the number of bolts 488 of the lower half annular flange 486 of the container body 472. The bolt 488 passes through the hole 508, and the fixing nut 490 is locked on the bolt 488 to fix the upper annular flange 506 of the bowl 430 and the lower annular flange 486 of the container body 472. The outer dimensions of the upper half annular flange 506, i.e. its perimeter, are preferably about the same as the outer dimensions of the lower half annular flange 486, i.e. its perimeter. When the process chamber 420 is located on the main frame 214, the lower half surface of the annular flange 506 on the upper half of the bowl 430 is placed on the supporting flange of the main frame 214. The inner circumference of the cylindrical part 50 2 contains the anode combination $ 7 4 and the filter 4 7 6. The external dimensions of the filter 4 7 6 and the anode combination 4 7 4 are slightly smaller than the internal dimensions of the cylindrical portion 50 2. These relative sizes can cause most of the electrolyte solution to flow through the anode assembly 474 before passing through the filter 4 7 6. The bottom portion 504 of the bowl 430 includes an electrolyte solution inlet 510 'which is connected to the electrolyte solution supply line of the electrolyte solution replenishing system 220. The anode assembly 4 7 4 is preferably placed in the middle of the cylindrical portion 502 of the bowl 4 3 0. The structure of the anode assembly 474 can provide a gap as the electrolyte solution flow between the anode assembly 474 and the electrolyte solution inlet 51 of the bottom surface portion 504. Page 68
本紙張尺度適用中國國家標準(CNS)A4規格(210 X -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明( 一可釋放的連接器最好連接電解質溶液入口 510和電 解質溶液供應線。此可釋放的連接器可使得製程室4 2 〇較 容易移除和替換。當製程室420需要維護時,電解質溶液 由製程室420排除,且電解質溶液供應線中的電解質溶液 流動加以中斷並排除。電解質溶液供應線之連接器由電解 質溶液入口 5 1 0放鬆,而連接到陽極組合474之電性連接 也加以分開。頭部組合41 0會舉起或旋轉而清出製程室 420要移除的空間。接著將製程室420由主架構214中移 走 中 後一新的或修理過後的製程室則放入此主架構2 j 4 經 濟 部 智 慧 財 產 局 員 X 消 費 合 作 社 印 製 另外,碗狀物430可固定在主架構214之支撐凸緣 且具有陽極和過濾器之容器本體472可移除而進行維 於此例子中’固定陽極組合4 7 4和容器本體4 7 2到碗 狀物430之螺帽可移除以協助陽極組合474和容器本體 472之移動。新的或修理過的陽極組合474和容器本體472 接著放入主架構214中並固定在碗狀物430上。 第2 0圖為一密封陽極的實施例之截面示意圖。此密 封陽極2000包括了具滲透性的陽極圍場,其可過濾或者 捕捉陽極板2004所溶解之金屬所產生的,,陽極沉澱,,或微 粒。如第20圖中所示的,陽極板2〇〇4包含了 一塊銅金屬。 此陽極板2004最好為一高姑片 A. , tst ^ 问純度、典乳之銅金屬,並包圍 在具親水性的陽極密封薄膜2002中。陽極板20 04由複數 個延伸到碗狀物430底部的雷料垃科十M _ ⑤π们%性接點或進料貫穿2 0 〇 6所 固定並支撐。電性接點或進料貫冑2〇〇6延伸經過陽極密 上 護 第69頁 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 封薄膜2002到陽極板2004之底部表面。電解質溶液之流 動以箭頭A指示,其由位於碗狀物43〇之底部的電解質溶 液入口 5 1 0流經過陽極和碗狀物側壁的縫隙。電解質溶液 也滲透到陽極密封薄膜2002中並流進或流出陽極密封薄 膜和陽極板之間的縫隙,如箭頭B所示。此陽極密封薄膜 2 0 0 2最好包含一親水性多孔薄膜,例如一修正過的聚偏二 氟乙烯薄膜,其多孔性在约60%和80%之間,較佳約70%, 且孔徑大小在約〇. 〇 2 5微米和约1微米之間,較佳约〇」 微米和約0. 2微米之間。親水性多孔薄膜的一個範例為This paper size applies to China National Standard (CNS) A4 specifications (210 X ----------- installed -------- order --------- (please read the back first) Please pay attention to this page and fill in this page) 519677 A7 B7 V. Description of the invention (A releasable connector is best connected to the electrolyte solution inlet 510 and the electrolyte solution supply line. This releasable connector can make the process chamber 4 2 0 easier Remove and replace. When the process chamber 420 needs maintenance, the electrolyte solution is eliminated by the process chamber 420, and the electrolyte solution flow in the electrolyte solution supply line is interrupted and eliminated. The connector of the electrolyte solution supply line is from the electrolyte solution inlet 5 1 0 Relax, and the electrical connection to the anode assembly 474 is also separated. The head assembly 410 will be raised or rotated to clear the space to be removed from the process chamber 420. Then the process chamber 420 is removed from the main frame 214 The new or repaired process room is placed in the main frame 2 j 4 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs X Consumer Cooperatives In addition, the bowl 430 can be fixed to the supporting flange of the main frame 214 and has an anode and Filter container The body 472 can be removed to maintain the nuts in this example 'fixed anode assembly 4 7 4 and container body 4 7 2 to bowl 430 to assist the movement of anode assembly 474 and container body 472. New The repaired or repaired anode assembly 474 and the container body 472 are then placed in the main frame 214 and fixed on the bowl 430. Figure 20 is a schematic cross-sectional view of an embodiment of a sealed anode. The sealed anode 2000 includes The anode paddock, which can filter or capture the metal produced by the anode plate 2004, anode precipitation, or particles. As shown in Figure 20, the anode plate 2004 contains a piece of copper metal. The anode plate 2004 is preferably a copper metal of high purity A, tst, and purity, and is enclosed in a hydrophilic anode sealing film 2002. The anode plate 20 04 extends from a plurality of bowls. Lightning material at the bottom of the 430 is not limited. The electrical contacts or feedthroughs are fixed and supported through 2006. The electrical contacts or feedthroughs extend through the anode cover. Page ----------- install -------- order --------- (Please read the back Note: Please fill in this page again.) 519677 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs. 5. Description of the invention () Sealing film 2002 to the bottom surface of anode plate 2004. The flow of electrolyte solution is indicated by arrow A, which is located in the bowl. The electrolyte solution inlet 5 10 at the bottom of the object 43 flows through the gap between the anode and the side wall of the bowl. The electrolyte solution also penetrates into the anode sealing film 2002 and flows into or out of the gap between the anode sealing film and the anode plate. As shown by arrow B. The anode sealing film 2000 preferably contains a hydrophilic porous film, such as a modified polyvinylidene fluoride film, having a porosity between about 60% and 80%, preferably about 70%, and a pore size The size is between about 0.005 micron and about 1 micron, preferably between about 0 "micron and about 0.2 micron. An example of a hydrophilic porous film is
Durapore Hydrophilic Membrane,其可由 Millipore Corporation,位於 Bedford, Massachusetts 的公司獲 得。當電解質溶液流經密封薄膜時,由溶解之陽極所產生 的陽極沉澱物和微粒被密封薄膜所過濾或捕捉住。因此, 在電鍍製程中此密封薄膜可改善電解質溶液之純度,且在 電鍍製程中由於陽極沉澱物和污染微粒在基板上所生成 的缺陷可有效的降低。 2.基板承裁座 第25圖為第6圖中所示之實施例的基板承載座14之 另一實施例的部分截面示意圖。於第2 5圖中所示的基板 承載座1 4之實施例中,由基板承載座所支撐的基板可以 延伸經過基板之垂直軸加以旋轉。基板承載座14包含了 可轉動之踴部組合2 41 0和頭部組合支架2 4 5 2。頭部組合 支架2452包括了置放柱2454、支軸2453、柱覆蓋物2455、 第70頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) 裝---- ί清先閱璜皆δι.主t事頃年真窝^1) 訂--------- 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 懸臂樑2 4 5 6、懸臂樑促動器2 4 5 7、和一樞軸接頭2 4 5 9。 置放柱2454放置於主架構214之本體上,且柱覆蓋物2455 覆蓋置放柱2454之頂端部分。置放柱2454最好可提供轉 動功能,如箭頭A1所示,其係相對於置放柱之垂直軸轉 動,因而使得頭部組合支架2452亦沿此垂直軸轉動。懸 臂樑2456由置放柱2454之上半部分橫向延伸並於樞軸接 頭2 4 5 9和柱覆蓋物2 4 5 5轴向連接。可轉動的頭部組合 2 41 0則接到位於懸臂樑2 4 5 6之末端的置放滑軌2 4 6 0上。 置放滑軌2 4 6 0導引頭邵組合2 41 0的垂直運動。頭部上舉 促動器2458位於置放滑軌2460的頂端以提供頭部組合 2 41 0的垂直位移。 懸臂樑2456之下端係連接到懸臂樑促動器2457之軸 心2453,此促動器為例如氣壓缸、導螺桿促動器、或伺服 馬達。懸臂樑促動器2457係放置在置放柱2454之上。樞 軸接頭2459軸向連接懸臂樑2456和柱覆蓋2454。懸臂樑 促動器2457提供了懸臂樑2456相對於懸臂樑2456和柱 覆蓋物2455之間的接頭2459樞軏運動,如箭頭A2所示。 當懸臂樑促動器2457回收時,懸臂樑2456將頭部組合 2410移到製程室420之外,如$ 6圖中所示。頭部組合 2410的移動提供了所需的空間可從電鍍製程室24〇移除 及/或取代製程t 420。當頭部組合由製程室㈣時,基板 可由颈部組合加入或移除。以樞軸接頭2459轉動頭部組 合2410使得基板和製程室成一角度。當懸臂樑促動器 2457延伸時,懸臂樑2456將頭部組合2410移往製程室 第71頁 本紙張尺度適用中國國家標準((:ϋ規格(21G χ 297 - ------—丨丨·裝--------訂---------Φ (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明() 420以便在製程位置中將基板放到頭部組合241〇中。 可轉動之頭部組合2410包括了轉動促動器2464滑動 地和置放滑軌24 60連接。頭部上舉促動器2458之軸心 2468乃穿過連接到轉動促動器2464之本體的上舉導軌 2466。軸心2468最好為一導螺桿型式之軸心,以便將上 舉導軌2 4 6 6以箭頭A 3所示的方向移動到不同的垂直位 置。轉動促動器2464則經軸心2470連接到基板承載座組 合2 450並轉動基板承載座組合2450,如箭頭A4所示。 電鍍製程時基板的轉動一般可增強沉積結果。電鍍製 程時頭部組合轉動在約Orpm和約20 0rpm之間(最好約 10-4 0RPM)。當基板及/或基板承載座浸沒在電解質溶液中 時,若基板和基板承載座在200RPM限制以上的轉速轉動, 則流體擾動將傳到電解質溶液中。當頭部組合降低位置以 將基板和製程室中的電解質溶液接觸,或者在頭部組合舉 起以將基板從製程室中的電解質溶液分離時,頭部組合也 可以轉動。當頭部組合由製程室舉起時,其最好以大到約 250 0RPM的高速轉動(最好是約從25rpm到2500RPM),以 加強殘留之電解質溶液由頭部組合上移除。 第27圖顯示了可轉動之頭部組合2410之一實施例的 截面示意圖,其可包含在第25圖中所示之實施例的基板 承載座14中。可轉動之頭部組合2410包含了基板承載座 組合2450,轉動促動器2464,軸心護罩2763,軸心2470, 電性進料貫穿2767,電性導體2771,和氣動進料貫穿 2773。轉動促動器2464包含了頭部轉動外殼2760和頭部 第72頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 一 « n an n I ϋ n n 一5, · n in n n in n n I - 經濟部智慧財產局員工消費合作社印製 519677 A7 五、發明說明() 轉動馬達2706。頭部轉動馬 運Z706包含了中空的線圈部 分2775和磁性旋轉元件2776。中六 甲二-泉圈部分2775以傳統 馬達技術之方式沿著垂直軸 轉動磁性旋轉元件2776。基 板承載座組合2450包厶τ w、论 。了成體護罩272 0,接觸外殼 2765,旋轉底座2799 ,推挤姑^ 难琢板66,電性接觸元件67 ,和 彈簧組合2 7 3 2。 接觸外殼2765和彈黃組合⑽-般為環狀,且此兩 元件互相配合以提供結合的轉動。彈簧組纟2732包含了 上彈簧表面2728,彈螢摺箱連接器2729,和下彈夢^面 2738。密封元件275 1密封了上彈黃表面2?28和推擠板66 之間的流體通道.密封元件2753則密封了下彈簧表面 2 7 3 8和接觸外殼2 7 6 5之間的流體通道。 私力乃供應到接觸基板上之種子層的電性接觸元件 6 7以提供陽極1 6和基板上之種子層之間所需的電壓而影 響到電鍍製程。電力由控制器2 2 2經電性進料穿透2 7 6 7 和接觸外殼2 7 6 5供應到電性接觸元件6 7。電性接觸元件 6 7乃在物性上及電性上和基板上的種子層接觸。軸心 2470、接觸外殼2765、彈簧組合2732、推擠板66、電性 接觸元件67、旋轉底座2799、和基板22(固定在推擠板 6 6和電性接觸元件6 7之間)如同一組合單位且皆沿著頭 部組合2410之縱軸旋轉。頭部轉動馬達270 6提供驅動力 使上述元件沿其垂直軸心轉動。 真空控制係由氣動進料貫穿2773提供到部分的可轉 動之頭部組合241 0以便控制推擠板相對於電性接觸元件 第73頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ------------. 經濟部智慧財產局員工消費合作社印製 519677 A7 五、發明說明( 67之位置。可提供真空度之氣動進料貫穿2773包本了可 控制的真空供應器2790,套筒元件2792,流體導管Aw, 周圍凹槽2795,流體孔洞2796,和流體通道mi套筒 元件2792可為不同的元件,或如冑27圖中所示為一部分 的軸心。周圍凹槽2795沿著軸心247〇的周邊在套筒元件 2792中延伸。氣動進料貫穿供應壓力槽274〇之真空度。 壓力槽的結構可維持正氣壓或真空,並和頭部組合2410 之結構有關。流體孔洞2796和周圍凹槽互通流體。流體 孔洞2796由周圍凹槽2795軸向延伸經過軸心247〇並到 達钟心247G之底部。流體通道2798延伸通過接觸外殼 2765°在軸心底部之流體孔洞2796和流體通道2798互通 流體°套筒元件2792之内部表面和軸心2470之外部表面 具有一小空隙’例如約〇 · 〇 〇 〇 2英吋大小,因而此兩元件 之間可有相對轉動。 真空度係由真空供應器2790經由流體導管2794加到 套筒元件2792和周圍凹槽2795之内部表面。此真空度係 由流體孔洞2796加到流體通道2798,及廢力槽2740。由 於套筒元件2 7 9 2和轴心2 4 7 0之間的空隙很小,加到套筒 元件2 7 9 2之内部表面的真空度經由周圍凹槽2 7 9 5通到流 體孔洞2 7 9 6。小空隙將限制空氣進入套筒元件2 7 9 2和軸 心2 470之外部表面之間。因此,由可控制的真空供應器 2790所提供的真空度延伸到壓力槽。在軸心2470中的真 空度通過流體通道2798到達形成於弹簧組合2732和接觸 外殼2765之間的壓力槽2740。由可控制的真空供應器 第74頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ▼裝--------訂---- 經濟部智慧財產局員工消費合作社印製 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 2790所提供的真空因而也控制了壓力槽274〇中的真士 度。 、二 彈簧摺箱連接器2729結合了彈簧和摺箱的概念。此 彈簧偏斜連接器272 9乃連接在推擠板66和接觸外殼n65 之間。彈簧摺箱連接器2729限制了推擠板66和電性接觸 元件67之間的流體流動。彈簧摺箱連接器2729在放鬆狀 態軸向位移時(無論是壓縮或延伸)將產生彈簧參數。彈簧 摺箱連接器2729之偏移可用來放置相對於電性接觸元$ 67之推擠板66。任何適當的偏壓元件若具有彈簧常數均 可做為彈簧摺箱連接器2729。另外,分開的彈簧和摺箱元 件也可用來做為彈簧摺箱連接器2729。上半部彈發表面 2728為環狀且密封連接到推擠板66。下半部彈簧表面 2738則牢牢地密封連接到接觸外殼2765。壓力槽2740則 定義於接觸外殼2765和彈簧組合2732之間的環狀區。於 一實施例中,由彈簧摺箱連接器2729所產生的彈簧張力 將推擠板堅固地壓靠在基板的背面。在壓力反應室274〇 中抽真空會舉起彈簧摺箱連接器2729,因此也會舉起推擠 板6 6 〇 當機械手臂(未顯示出來)將基板22載入或移出電性 接觸元件67上時,推擠板66將位移到上昇的位置。當機 械手臂***後,基板2 2將停在電性接觸元件6 7上,使得 基板22之電鍍表面的周圍和電性接觸元件接觸。推擦板 66接著降下並穩固的靠在基板22的上表面以確保基板 和電性接觸元件67之間緊密的接觸。控制器222則選定 第75頁 --------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明() 由控制器222加到基板22上之種子層的電性。 基板承載座組合2450的結構可將基板22固定在確實· 的位置上使得基板在交換、乾燥和製程位置時可以移動Y 推擠板66也可往下偏移而將基板22固定在電性接觸元件 67上。推擠板66往上偏移則提供了推擠板66和電性接觸 元件67之間的空間而讓機械手臂裝置將基板載入。於第 27圖所示的實施例中,推擠板往上偏移係由可控制的真空 供應器2790在壓力槽2740所產生的真空而提供。壓:二 2740中的真空使得上半部彈簧表面2728、剩下的彈簧組 合2 7 3 2、和貼附的推擠板6 6往上位移。 從可控制的真空供應器2790降低真空度將使得彈黃 摺相連接器2729回到其正常的張力位置,上半部彈簽表 面2728則將推擠板66偏移而固定基板22在電性接觸元 件6 7的位置上。基板倚靠著電性接觸元件6 7之物性偏移 可加強電性接觸元件6 7和基板2 2上之種子層之間的電性 接觸。電性接觸元件6 7以***基板承載座組合中的基板 上之種子層周圍往外延伸,並以相對於第6圖之實施例中 所示的陽極組合4 7 4之電性偏壓來影響種子層上之金屬層 沉積。推擠板6 6、電性接觸元件6 7、彈簧摺箱連接器 2 7 2 9、和***電性接觸元件上之基板均相對於流體護罩 2 7 2 0轉動。此流體護罩2 7 2 0則仍固定於軸心護罩2 7 6 3 且不會轉動。 頭部轉動馬達2706係配置在(且至少部分延伸穿過) 中空頭部轉動外殼2 7 6 0之内部周圍且連接到軸心2 4 7 0。 第76頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 B7 五、發明說明() (請先閱讀背面之注意事項再填寫本頁) 中空線圈部分2 7 7 5則配置於中空頭部轉動外殼2 7 6 0之内 部且相對其固定不動。轴心2470包括了磁性部分2777並 可沿著垂直軸心旋轉。磁性部分2 7 7 7則完全位於中空線 圈部分2775之中空部分内。中空線圈部分2775包括了磁 性部分2777和剩餘的軸心2470中的轉動。抽承2785位 於軸心護罩2 7 6 3和軸心2 4 7 0之間以限制軸心2 4 7 0沿著 垂直軸轉動時不會有橫向的運動。軸心2470之輸出,也 就是軸心的下半部分,可提供基板承載座組合2450某些 部分之轉動運動,包括推擠板66和承載於推擠板及電性 接觸元件6 7之間的基板2 2,如同下面所要描述的。頭部 轉動馬達2706之型式可產生輸出轉動的範圍在控制器 222的影響下可為,例如〇rpm到25 0 0RPM之間。 流體護罩2 7 2 0可選擇性的使用,而當其使用時可將 其配置於基板承載座裝置2450的周圍且最好和其有一距 離。流體護罩中含有電解質溶液或其它物質,可因基板承 載座裝置2450的離心力轉動而旋轉出來。 3.基板承裁座之榉作 經濟部智慧財產局員工消費合作社印製 基板承載座組合2450的操作如下所述。當機械手臂 將基板22***或抽出基板承載座組合245〇時,基板承載 座組合2450會移動到交換位置。壓力槽2740中的真空度 開始增加(或壓力降低),使得基板承載座組合舉起推擠板 而位移到交換位置。壓力槽2740中所增加的真空度讓彈 簧組合2732除了活塞桿330之外也偏移了密封活塞328 第77頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印製 519677 A7 ______B7_ 五、發明說明() 和推擠板6 6,偏移方向則如箭頭3 3 6所示的向上方位。當 推擠板位置向上使得基板承載組合2450在交換位置時, 機械手臂可將基板22***推擠板66和電性接觸元件67 之間。接著機械手臂縮回而留下基板在電性接觸元件上。 推擠板66接著降下來和基板背面接觸並施以一輕微 的力量。為了要完成此動作,壓力槽2 740中的真空度會 降低,也就是彈簧組合2 7 3 2所產生的偏移力量會被增加 的壓力克服。降低的真空度將推擠板6 6往下推移。推擠 板和靜止在電性接觸·元件6 7上之基板以足夠的壓力接 觸,使得基板與電性接觸元件6 7進行電性接觸。由於真 空度所施加的基板承載裝置14中面積的集中性,及基板 的型狀’加到壓力槽2740中的真空度將平均的分佈在上 彈簧表面2728之上表面周圍。上彈簧表面2728乃連接到 推擠板66。均勻加在上半部彈簧表面2728的壓力因而也 均勻的轉換成推擠板66往下的力並壓在基板的背面。由 邊緣密封398加在基板上之均勾力量會在基板周圍形成偏 壓。基板周圍所形成的偏壓使得電性接觸元件6 7和基板 上之種子層之間均句的電性接觸。 當推擠板66降低到使得電性接觸元件和基板22接 觸’則推擠板 '基板22、電性接觸元件6?、和密封活塞 328皆如同-組合單位而旋轉,其中的轉動並可傳到基板 22。上述之轉動更可在電鍍換 幾探作時於基板足電鍍表面沉積 一層更均勻的金屬層薄膜。文k 、 嘴存膜另外,此製程也可在靜態的基 板2 2上執行,而此時推协姑 摧擠板66、基板22、電性接觸元件 第78頁 私紙張尺度中_家標準(CNS)A4 -----------.—I—^--------- (請先閱讀背面之注意事項再填寫本頁) 519677 A7 五、發明說明( 6绝封活塞3 2 8、和彈簧組合2 7 3 2也維持不動。電性接 觸疋件67 it常具有突出的部分(未顯示出來),此部分可 和種子層接觸而加強和種子層的電性接觸。 於製&位置中’基板承載座組合2450支撐基板22之 將使知"/、电鍍表面浸泡在電解質室中的電鍍溶液 裏’如弟2圖中所示。當基板承載座組合245 0降低到製 私位置時,部分的頭部部分2 4 5 0包括了一整塊結構3 2 6、 推擠板6 6 ’在基板轉動的實施例中,且電性接觸元件π 以大約〇.和約200RpM之間的角速度轉動,最好約10到約 4 0RPM。固定在推擠板和電性接觸元件之間的基板22之轉 動了加強金屬薄膜在整個電鍍表面沉積的均勻性。基板Μ (角速度和基板承載座組合2450之轉動部分的轉動程度 並不會在電鍍溶液中產生太大的擾動,而過度的角速度則 會有較大的擾動。當基板承載座14位於製程位置時,電 鍍溶液和陽極1 6之間的反應所產生之金屬離子則沉積在 基板22上的電鍍表面。另外,基板承載座組合並不和例 如第1圖中之電鍍室一起轉動的那些實施例中,基板 承載座組合2450之部分包括了一整塊結構326、推擠板 66、和電性接觸元件67並不會轉動。 當基板22上的製程完成之後,基板承載座組合 將由電鍍溶液中撤換移除整個基板22。為了提供製程位置 和乾燥位置之間的替換,上舉導軌2466轉換性的相對置 放滑軌2460往上位移。當基板22由電鍍溶液中移除,基 板承載座組合2450位於乾燥位置時,頭部轉動部分3〇 第79頁 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) Γ琦先閱讀背面之>it事項再填寫本頁} C----Durapore Hydrophilic Membrane, which is available from Millipore Corporation, a Bedford, Massachusetts-based company. When the electrolyte solution flows through the sealing film, the anode precipitates and particles generated by the dissolved anode are filtered or captured by the sealing film. Therefore, the sealing film can improve the purity of the electrolyte solution during the electroplating process, and defects generated on the substrate due to anode precipitation and contamination particles can be effectively reduced during the electroplating process. 2. Substrate receiving seat Fig. 25 is a schematic partial cross-sectional view of another embodiment of the substrate bearing seat 14 of the embodiment shown in Fig. 6. In the embodiment of the substrate carrier 14 shown in FIG. 25, the substrate supported by the substrate carrier can be extended through the vertical axis of the substrate and rotated. The substrate carrier 14 includes a rotatable crotch assembly 2 410 and a head assembly bracket 2 4 5 2. The head combination bracket 2452 includes a placing column 2454, a supporting shaft 2453, a column cover 2455, page 70. This paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meals). ---- Qing Read all 璜 ι δι. The main thing is the real nest of the year ^ 1) Order --------- 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention () Cantilever 2 4 5 6 , Cantilever actuator 2 4 5 7 and a pivot joint 2 4 5 9. The placement column 2454 is placed on the body of the main frame 214, and the column cover 2455 covers the top portion of the placement column 2454. The placement column 2454 preferably can provide a rotation function, as shown by arrow A1, which is rotated relative to the vertical axis of the placement column, so that the head combination bracket 2452 is also rotated along this vertical axis. The cantilever beam 2456 extends laterally from the upper half of the placement column 2454 and is axially connected to the pivot joint 2 4 5 9 and the column cover 2 4 5 5. The rotatable head assembly 2 4 1 0 is connected to the placement slide 2 4 6 0 at the end of the cantilever beam 2 4 5 6. Set the vertical movement of the slide 2 4 6 0 seeker Shao 2 410. A head lift actuator 2458 is located at the top of the placement slide 2460 to provide a vertical displacement of the head assembly 2 410. The lower end of the cantilever beam 2456 is connected to the axis 2453 of the cantilever beam actuator 2457, which is, for example, a pneumatic cylinder, a lead screw actuator, or a servo motor. A cantilever actuator 2457 is placed above the placement column 2454. The pivot joint 2459 connects the cantilever beam 2456 and the column cover 2454 axially. Cantilever actuator 2457 provides pivoting movement of the cantilever beam 2456 relative to the joint 2459 between the cantilever beam 2456 and the column cover 2455, as shown by arrow A2. When the cantilever actuator 2457 is retracted, the cantilever beam 2456 moves the head assembly 2410 out of the process chamber 420, as shown in the $ 6 figure. The movement of the head assembly 2410 provides the required space to be removed from the plating process chamber 24o and / or to replace the process t 420. When the head assembly is removed from the process chamber, the substrate can be added or removed from the neck assembly. Rotating the head assembly 2410 with a pivot joint 2459 makes the substrate and the process chamber at an angle. When the cantilever actuator 2457 is extended, the cantilever beam 2456 moves the head assembly 2410 to the process room. Page 71 This paper standard applies to Chinese national standards ((: ϋSpecification (21G χ 297----------- 丨丨 · Assembly -------- Order --------- Φ (Please read the notes on the back before filling this page) 519677 A7 B7 V. Description of the invention () 420 in order to be in the process position Place the base plate in the head assembly 2410. The rotatable head assembly 2410 includes a rotary actuator 2464 to be slidably connected to the placement slide 24 60. The shaft 2468 of the actuator 2458 is lifted on the head Through the lifting guide 2466 connected to the body of the rotary actuator 2464. The shaft center 2468 is preferably a lead screw type shaft center to move the lifting guide 2 4 6 6 to a different direction shown by the arrow A 3 The vertical position of the actuator. The rotary actuator 2464 is connected to the substrate carrier assembly 2 450 via the axis 2470 and rotates the substrate carrier assembly 2450, as shown by arrow A4. The rotation of the substrate during the plating process generally enhances the deposition result. When the head combination rotates between about 0rpm and about 200rpm (preferably about 10-4 0RPM). When the substrate and / or When the substrate carrier is immersed in the electrolyte solution, if the substrate and the substrate carrier rotate at a rotation speed above the 200RPM limit, the fluid disturbance will be transmitted to the electrolyte solution. When the head assembly is lowered to bring the substrate and the electrolyte solution in the process chamber into contact Or, when the head assembly is lifted to separate the substrate from the electrolyte solution in the process chamber, the head assembly can also be rotated. When the head assembly is lifted from the process chamber, it is preferably rotated at a high speed of about 250 0RPM (Preferably from about 25 rpm to 2500 RPM) to remove the residual electrolyte solution from the head assembly. Figure 27 shows a schematic cross-sectional view of one embodiment of a rotatable head assembly 2410, which can be included in the first In the substrate carrier 14 of the embodiment shown in Fig. 25, the rotatable head assembly 2410 includes a substrate carrier assembly 2450, a rotary actuator 2464, a shaft guard 2763, a shaft center 2470, and electrical feed. Through 2767, electrical conductor 2771, and pneumatic feed through 2773. Rotary actuator 2464 includes a head turning housing 2760 and a head. Page 72 This paper applies Chinese National Standard (CNS) A4 regulations. (210 X 297 mm) (Please read the notes on the back before filling out this page)-«n an n I ϋ nn -1, · n in nn in nn I-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 519677 A7 V. Description of the invention () Rotating motor 2706. The head-turning Ma Yun Z706 contains a hollow coil part 2775 and a magnetic rotating element 2776. Secondary 6 A 2-Spring ring part 2775 rotates the magnetic rotating element 2776 along the vertical axis in the manner of conventional motor technology. The base plate bearing seat combination 2450 includes ττw. An adult shield 2720, a contact housing 2765, a rotating base 2799, a pusher 66, an electric contact element 67, and a spring combination 2 7 3 2 are pushed. The contact housing 2765 and the elastic yellow combination ⑽ are generally ring-shaped, and these two elements cooperate with each other to provide a combined rotation. The spring set 纟 2732 includes an upper spring surface 2728, an elastic folding box connector 2729, and a lower elastic dream surface 2738. The sealing element 275 1 seals the fluid passage between the upper yellow surface 2-28 and the pushing plate 66. The sealing element 2753 seals the fluid passage between the lower spring surface 2 7 3 8 and the contact case 2 7 6 5. Self-power is an electrical contact element 67 that is supplied to the seed layer on the contact substrate to provide the required voltage between the anode 16 and the seed layer on the substrate to affect the plating process. Electricity is supplied by the controller 2 2 2 to the electrical contact element 67 via the electrical feedthrough 2 7 6 7 and the contact housing 2 7 6 5. The electrical contact element 67 is in physical and electrical contact with the seed layer on the substrate. The axis 2470, the contact housing 2765, the spring combination 2732, the push plate 66, the electrical contact element 67, the rotating base 2799, and the base plate 22 (fixed between the push plate 66 and the electrical contact element 67) are the same The combination units are all rotated along the longitudinal axis of the head combination 2410. The head rotation motor 2706 provides a driving force to rotate the above-mentioned element along its vertical axis. The vacuum control system is provided by a pneumatic feed penetrating through the 2773 to a part of the rotatable head assembly 2410 to control the push plate relative to the electrical contact element. Page 73 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) ------------. Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 V. Description of Invention (Location of 67 Pneumatic feed can provide vacuum degree through the 2773 package controllable vacuum supply 2790, sleeve element 2792, fluid conduit Aw, surrounding groove 2795, fluid hole 2796, and fluid channel mi sleeve element 2792 can be Different elements, or a part of the axis as shown in Figure 27. A peripheral groove 2795 extends in the sleeve element 2792 along the periphery of the axis 247 °. Pneumatic feeding penetrates the vacuum degree of the supply pressure tank 2740 The structure of the pressure tank can maintain positive air pressure or vacuum, and is related to the structure of the head combination 2410. The fluid hole 2796 communicates with the surrounding grooves. The fluid hole 2796 extends from the surrounding groove 2795 axially through the axis 247 and reaches Bell Heart 247G The fluid channel 2798 extends through the fluid hole 2796 which contacts the housing 2765 ° at the bottom of the shaft center and the fluid channel 2798 communicates fluid. The inner surface of the sleeve member 2792 and the outer surface of the shaft center 2470 have a small gap, such as about 0 · The size is 002 inches, so there can be relative rotation between the two elements. The degree of vacuum is applied from the vacuum supply 2790 to the inner surface of the sleeve element 2792 and the surrounding groove 2795 through the fluid conduit 2794. The fluid hole 2796 is added to the fluid channel 2798 and the waste groove 2740. Since the gap between the sleeve element 2 7 9 2 and the shaft center 2 4 7 0 is very small, it is added to the inner surface of the sleeve element 2 7 9 2 The degree of vacuum passes through the surrounding groove 2 7 9 5 to the fluid hole 2 7 9 6. The small gap will restrict air from entering between the sleeve element 2 7 9 2 and the external surface of the shaft center 2 470. Therefore, the controllable The degree of vacuum provided by the vacuum supply 2790 extends to the pressure groove. The degree of vacuum in the shaft center 2470 passes through the fluid passage 2798 to the pressure groove 2740 formed between the spring assembly 2732 and the contact housing 2765. By a controllable vacuum supply74 pages of this paper are applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ▼ Packing -------- Order ---- Economy Printed by the Ministry of Intellectual Property Bureau employee consumer cooperative 519677 Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative A7 V. Description of the invention () The vacuum provided by 2790 therefore also controls the degree of realism in the pressure slot 2740. 2, 2 Spring folding box connector 2729 combines the concept of spring and folding box. This spring deflection connector 2729 is connected between the push plate 66 and the contact housing n65. The spring box connector 2729 restricts fluid flow between the push plate 66 and the electrical contact member 67. The spring box connector 2729 will produce spring parameters when it is axially displaced (either compressed or extended) in a relaxed state. The offset of the spring-folded box connector 2729 can be used to place a push plate 66 relative to the electrical contact element of $ 67. Any suitable biasing element having a spring constant can be used as the spring box connector 2729. Alternatively, separate spring and box components can be used as the spring box connector 2729. The upper ejection surface 2728 is annular and is sealingly connected to the push plate 66. The lower half spring surface 2738 is firmly sealed to the contact housing 2765. The pressure groove 2740 is defined in the annular area between the contact housing 2765 and the spring combination 2732. In one embodiment, the spring tension generated by the spring box connector 2729 presses the push plate firmly against the back of the substrate. Evacuating in the pressure reaction chamber 274〇 will lift the spring folding box connector 2729, so the push plate 6 6 will also be lifted when the robot arm (not shown) loads or removes the substrate 22 from the electrical contact element 67 When up, the push plate 66 will be moved to the raised position. When the mechanical arm is inserted, the substrate 22 will stop on the electrical contact element 67, so that the periphery of the electroplated surface of the substrate 22 and the electrical contact element come into contact. The wiper plate 66 is then lowered and firmly rested on the upper surface of the substrate 22 to ensure a close contact between the substrate and the electrical contact element 67. The controller 222 is selected on page 75 -------------------- ^ --------- (Please read the precautions on the back before filling this page ) 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention () The electrical property of the seed layer added to the substrate 22 by the controller 222. The structure of the substrate carrier combination 2450 can fix the substrate 22 in a certain position so that the substrate can be moved during the exchange, drying and process positions. The Y push plate 66 can also be shifted downward to fix the substrate 22 in electrical contact. Element 67. The upward displacement of the pushing plate 66 provides a space between the pushing plate 66 and the electrical contact element 67 to allow the robot arm device to load the substrate. In the embodiment shown in FIG. 27, the upward displacement of the pushing plate is provided by the vacuum generated by the controllable vacuum supplier 2790 in the pressure tank 2740. Pressure: The vacuum in the second 2740 causes the upper half of the spring surface 2728, the remaining spring combination 2 7 3 2, and the attached push plate 6 6 to move upward. Decreasing the vacuum from the controllable vacuum supply 2790 will return the spring-folded connector 2729 to its normal tension position, and the upper surface of the spring-stretched tab 2728 will offset the push plate 66 and fix the substrate 22 in electrical Contact element 67. The physical displacement of the substrate against the electrical contact element 67 can strengthen the electrical contact between the electrical contact element 67 and the seed layer on the substrate 22. The electrical contact element 67 extends outwards around the seed layer inserted on the substrate in the substrate carrier assembly, and affects the seed with an electrical bias relative to the anode assembly 4 7 4 shown in the embodiment of FIG. 6. A metal layer is deposited on the layers. The push plate 6 6, the electrical contact element 6 7, the spring folding box connector 2 7 2 9, and the substrate inserted on the electrical contact element are rotated relative to the fluid shield 2 7 2 0. The fluid shield 2 7 2 0 is still fixed to the shaft shield 2 7 6 3 and does not rotate. The head rotation motor 2706 is disposed around (and at least partially extends through) the inside of the hollow head rotation housing 2 7 60 and is connected to the shaft center 2 4 7 0. Page 76 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- installation -------- order ------- -(Please read the precautions on the back before filling this page) 519677 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page) Hollow coil part 2 7 7 5 is configured on the hollow head Rotate the inside of the housing 2760 and keep it stationary. The axis 2470 includes a magnetic portion 2777 and is rotatable along a vertical axis. The magnetic part 2 7 7 7 is completely located in the hollow part of the hollow coil part 2775. The hollow coil portion 2775 includes the rotation in the magnetic portion 2777 and the remaining shaft center 2470. The drawing bearing 2785 is located between the shaft guard 2 7 6 3 and the shaft center 2 4 7 0 to restrict the shaft center 2 4 7 0 from rotating laterally when it is rotated along the vertical axis. The output of the shaft center 2470, that is, the lower half of the shaft center, can provide the rotational movement of some parts of the substrate bearing base assembly 2450, including the push plate 66 and the load between the push plate 66 and the electrical contact element 67. The substrate 22 is as described below. The range in which the head rotation motor 2706 can generate output rotation can be under the influence of the controller 222, for example, between 0 rpm and 2500 RPM. The fluid shield 2 7 2 0 can be used selectively, and when it is used, it can be arranged around the substrate carrier device 2450, preferably at a distance from it. The fluid shield contains an electrolyte solution or other substance, which can be rotated out by the centrifugal force of the substrate carrier device 2450. 3. The beech of the substrate cutting seat Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The operation of the substrate bearing seat combination 2450 is as follows. When the robot arm inserts or removes the substrate 22 into or out of the substrate holder assembly 2450, the substrate holder assembly 2450 moves to the exchange position. The degree of vacuum in the pressure groove 2740 starts to increase (or the pressure decreases), so that the combination of the substrate bearing seat is pushed and pushed to the exchange position. The increased vacuum in the pressure groove 2740 causes the spring assembly 2732 to shift the seal piston 328 in addition to the piston rod 330. Page 77 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Ministry of Economy Printed by the Intellectual Property Bureau employee consumer cooperative 519677 A7 ______B7_ V. Description of the invention () and push plate 6 6; the offset direction is upward as shown by arrow 3 3 6. When the pushing plate position is upward so that the substrate carrying assembly 2450 is in the exchange position, the robot arm can insert the substrate 22 between the pushing plate 66 and the electrical contact element 67. The robot arm then retracts and leaves the substrate on the electrical contact element. The push plate 66 is then lowered to contact the back of the substrate and exerts a slight force. In order to accomplish this, the vacuum in the pressure tank 2 740 is reduced, that is, the offset force generated by the spring combination 2 7 3 2 is overcome by the increased pressure. The reduced vacuum will push the plate 66 down. The push plate and the substrate resting on the electrical contact and component 67 are brought into contact with each other with sufficient pressure so that the substrate and the electrical contact component 67 are in electrical contact. Due to the concentration of the area in the substrate carrier 14 applied by the vacuum and the shape of the substrate ', the degree of vacuum applied to the pressure groove 2740 will be evenly distributed around the upper surface of the upper spring surface 2728. The upper spring surface 2728 is connected to the pushing plate 66. The pressure evenly applied to the upper surface 2728 of the spring is thus uniformly converted into a downward force of the pushing plate 66 and pressed against the back surface of the substrate. The uniform hooking force applied to the substrate by the edge seal 398 creates a biasing force around the substrate. The bias voltage formed around the substrate makes a uniform electrical contact between the electrical contact element 67 and the seed layer on the substrate. When the push plate 66 is lowered so that the electrical contact element and the substrate 22 are in contact, the push plate 66, the substrate 22, the electrical contact element 6 ?, and the sealing piston 328 all rotate as a combined unit, and the rotation therein can be transmitted. To the substrate 22. The above rotation can even deposit a more uniform metal layer film on the plating surface of the substrate foot during the electroplating operation. In addition, the film is stored in the mouth. In addition, this process can also be performed on the static substrate 22, and at this time, the push plate 66, the substrate 22, and the electrical contact element are on the private paper scale. CNS) A4 -----------.— I — ^ --------- (Please read the notes on the back before filling out this page) 519677 A7 V. Description of the invention (6 must The sealing piston 3 2 8 and the spring combination 2 7 3 2 also remain stationary. The electrical contact member 67 it often has a protruding portion (not shown), which can be in contact with the seed layer to enhance the electrical properties of the seed layer. Contact. In the manufacturing position, 'the substrate support base assembly 2450 supports the substrate 22 will be known " /, the plating surface is immersed in the plating solution in the electrolyte chamber' as shown in Figure 2. When the substrate support base assembly When 245 0 is lowered to the private position, the head portion 2 4 5 0 includes a whole structure 3 2 6. The pushing plate 6 6 ′ In the embodiment in which the substrate rotates, and the electrical contact element π is approximately 〇. And angular speed between about 200 RpM, preferably about 10 to about 40 RPM. Rotation of the substrate 22 fixed between the push plate and the electrical contact element This enhances the uniformity of the metal film deposition on the entire plating surface. The substrate M (angular velocity and the degree of rotation of the rotating part of the substrate carrier combination 2450 will not cause too much disturbance in the plating solution, and excessive angular velocity will have Large disturbance. When the substrate support 14 is located at the process position, metal ions generated by the reaction between the plating solution and the anode 16 are deposited on the plating surface of the substrate 22. In addition, the combination of the substrate support and the In those embodiments in which the electroplating chamber rotates together in FIG. 1, a part of the substrate carrier assembly 2450 includes a whole structure 326, a pushing plate 66, and an electrical contact element 67 and does not rotate. After the manufacturing process is completed, the substrate carrier assembly will be removed from the plating solution to remove the entire substrate 22. In order to provide a replacement between the process position and the drying position, the upper guide rail 2466 converts the oppositely disposed slide rail 2460 upward. When The substrate 22 is removed from the plating solution, and when the substrate carrier assembly 2450 is in a dry position, the head rotating part 30. page 79 This paper is applicable in this paper National Standards (CNS) A4 size (21〇 x 297 mm) Γ Qi read the back of > it matters to fill out this page} C ----
訂---------I 經濟部智慧財產局員工消費合作社印製 519677 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 中的頭部轉動馬達306在約60 0和約8000RPM之間的轉速 轉動基板承载座組合,最好則約2〇〇〇RPM,此係在基板承 載座組合轉動的實施例中所實施的。基板2 2的轉動可利 用慣性將基板上的液體旋轉排除並使基板22乾燥。另外, 基板22也可傳送到不同的旋轉-清洗-乾燥單元中,但並 未顯示出來。 在此必需特別注意的是,雖然上面提供了數個基板承 載座之貫施例的詳細描述,任何一個能夠將基板送入具有 電解質溶液之製程室420的基板承載座均可使用。例如, 此基板承載座可沿著垂直軸心轉動基板,或者不進行轉 動。 4 ·沉猜均勻性之考暑 第28圖顯示了圖形2800中有複數條曲線28〇6a、 2806b、2806c、和2806d,每條曲線均描繪了由基板中心 到周圍經過一個半徑所沉積金屬薄膜之厚度均勻性。於此 圖中,”半徑”一詞係用在實際為圓形的基板上。基板形狀 實際上也可為矩形、橢圓形等等。如此則”半徑,,一詞所鹿 用的基板係為由基板中心延伸到基板邊緣的直線。此種金 屬薄膜由種子層的中心到周圍沉積厚度之均勻性所顯示 的曲線也稱之為輪廊、外觀(profile)。電解質室2丨2勺 括了具有實際上和基板相同直徑的圓柱形部分及 室212開口端的溢流部分。<見第6圖,高度z為基板才 於電解質室之垂直位置。高度Z可因不同之電解質室位置 第80頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項再填寫本頁) ▼裝--------訂-------- 519677 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 而取得。然而,在此圖中,高度2可視為基板之電鍍表面 到第6圖中的電鍍室之上半部邊緣的距離。在第2 8圖中, 橫座標2 8 0 2代表基板種子層點距基板之邊緣的距離(厘 米)。縱座標2 8 0 4代表沉積之銅金屬的厚度(微米)。跨過 基板上種子層半徑的沉積金屬層薄膜厚度以複數個曲線 2806a、2806b、2806c 和 2806d 表示。每條曲線 28〇6a、 280 6b、2806c和28 06d和其它曲線之變化只為高度z的函 數。曲線280 6a代表的高度z為12厘米。曲線280 6b代 表的高度Z為10厘米。曲線2806c代表的高度z為6厘 米。曲線280 6d代表的高度Z為2厘米。第28圖顯示了 修改高度Z值可影響基板上種子層之金屬薄膜沉積厚度之 均勻性。整個種子層之電鍍厚度的各種均勻度做為高度z 之函數的類似關係也在相當不同的電鍍狀況下加以顯 示。在電鍍時種子層中典型之電流密度值包括了 5到 6OMa/cm2。沉積1· 2微米厚之鍍層的沉積時間和特定的製 程參數和電鍍電流有關,但一般的範圍從約3 〇秒到約3 分鐘。在種子層上由陽極到種子層之電壓降的等級為 伏特,且此數值和元件阻抗及所需的電流有關。 第28圖所例舉的為改變高度Z對於整個基板半彳承由 中心到周圍之電鍍厚度均勻性之影響。對上逑之曲線來 說,例如2806c之沉積厚度與曲線2806a比起來較為一 致、也較均勻。基板22之高度Z變化如第25圖中所示係 由相對於置放滑軌2460的上舉導軌2466之垂亩得& 且%勒加以 改變。上舉導軌2466相對於置放滑軌2460之泰古$ a , I I連動則 第81頁 --------------------訂--------- (請先閱讀背面之注意事項再填冩本頁)Order --------- I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description (the head rotation motor 306 in about 60 0 The substrate carrier combination is rotated at a speed between about 8000 RPM, and preferably about 2000 RPM, which is implemented in the embodiment of the substrate carrier combination rotation. The rotation of the substrate 22 can be used to rotate the substrate on the substrate. The liquid is rotated and removed and the substrate 22 is dried. In addition, the substrate 22 can also be transferred to different spin-clean-dry units, but it is not shown. It is important to note here that although several substrate supports are provided above The detailed description of the embodiment of the seat can be used for any substrate carrier capable of feeding the substrate into the process chamber 420 with the electrolyte solution. For example, the substrate carrier can rotate the substrate along the vertical axis or not rotate 4 · The test of Shen Guai uniformity Figure 28 shows that there are a plurality of curves 2806a, 2806b, 2806c, and 2806d in the graph 2800. Each curve depicts the path from the center of the substrate to the surroundings. The thickness uniformity of the metal film deposited over a radius. In this figure, the term "radius" is used on a substrate that is actually circular. The shape of the substrate can actually be rectangular, oval, etc. Radius, the term used for the substrate is a straight line extending from the center of the substrate to the edge of the substrate. The curve shown by the uniformity of the thickness of this metal thin film from the center of the seed layer to the surrounding deposition is also called the contour, appearance (Profile). The electrolyte chamber 2 2 includes a cylindrical portion having substantially the same diameter as the substrate and an overflow portion of the open end of the chamber 212. < See FIG. 6 where the height z is the vertical position of the substrate in the electrolyte chamber The height Z can be different due to different electrolyte chamber positions. Page 80 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) ▼ Load --- ----- Order -------- 519677 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. The description of the invention was obtained. However, in this figure, the height 2 can be regarded as the plating surface of the substrate. To the plating room in Figure 6 The distance from the upper half edge. In Figure 28, the horizontal coordinate 2 8 0 2 represents the distance (cm) from the substrate seed layer point to the edge of the substrate. The vertical coordinate 2 8 0 4 represents the thickness of the deposited copper metal (micron ). The thickness of the deposited metal layer film across the radius of the seed layer on the substrate is represented by a plurality of curves 2806a, 2806b, 2806c, and 2806d. Each curve 280a, 280 6b, 2806c, and 28 06d and other curves change only by height A function of z. The height z represented by curve 280 6a is 12 cm. The height z represented by curve 280 6b is 10 cm. Curve 2806c represents a height z of 6 cm. Curve 280 6d represents a height Z of 2 cm. Figure 28 shows that modifying the height Z value can affect the uniformity of the metal film deposition thickness of the seed layer on the substrate. Similar relationships between the various uniformities of the plating thickness of the entire seed layer as a function of height z are also shown under quite different plating conditions. Typical current density values in the seed layer during plating include 5 to 6 OMa / cm2. The deposition time for depositing a 1.2 micron-thick plating layer is related to specific process parameters and plating currents, but generally ranges from about 30 seconds to about 3 minutes. The level of the voltage drop from the anode to the seed layer on the seed layer is volts, and this value is related to the element impedance and the required current. Figure 28 illustrates the effect of changing the height Z on the uniformity of the plating thickness from the center to the surroundings of the entire substrate half-bearing. For the upper curve, for example, the deposition thickness of 2806c is more consistent and uniform than that of curve 2806a. The change in the height Z of the base plate 22 is shown in FIG. 25 by changing the width of the lift rail 2466 with respect to the placement slide rail 2460. The lift rail 2466 is relative to the Thai ancient $ a of the slide rail 2460, and the II linkage is page 81 -------------------- Order ------ --- (Please read the notes on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 519677 五、發明說明() 由控制器222藉由頭部上舉促動器2458而加以控制。為 了由基板中心到基板邊緣提供更為一致的沉積厚度,高度 Z之選擇將可提供整個基板半徑最大的沉積厚度均句性。 有數種技術可影響基板上之種子層的沉積厚度。這些 技術一般包括了在沉積之後以物理測量法來測沉積層之 厚度。此沉積層的物理性測量法可利用破壞性和非破壞性 之基板顯微測量,化學分析技術如電性四點探針測量法、 X射線為主的厚度測量、和聲波反應為厚度之函數的雷射 /貝J 置。例如’由 Rud〇iph Research Corporation ofPrinted by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 V. Description of the invention () Controlled by the controller 222 by lifting the actuator 2458 on the head. In order to provide a more consistent deposition thickness from the center of the substrate to the edge of the substrate, the choice of height Z will provide a uniform deposition thickness with the largest radius across the substrate. There are several techniques that can affect the thickness of the seed layer deposited on a substrate. These techniques generally include physical measurement of the thickness of the deposited layer after deposition. The physical measurement of the deposited layer can use destructive and non-destructive substrate micro-measurement, chemical analysis techniques such as electrical four-point probe measurement, X-ray-based thickness measurement, and acoustic response as a function of thickness Laser / Bay J. For example, ‘by Rud〇iph Research Corporation of
Flanders,New Jersey 所生產的 METAPULSE®工具即為其 中一種可兹利用之雷射測量工具。於操作時,數種基板會 在各種不同的條件下加以電鍍,如高度Ζ的變化,不同的 基板寶曲形狀,等等。由基板之中心到邊緣之沉積厚度的 均勻性可於每個基板中利用上述技術加以測量。 於第6圖所示之實施例中,基板承載座相對於電解質 室之Ζ位置可加以校正。此校正假設置放滑軌2460對於 樞軸接頭2459來說,其相對於頭部組合支架2452為垂直 的’而樞軸接頭2459並未如第25圖之實施例中所呈的角 度。假如樞軸接頭2 4 5 9具有角度,Ζ位置就必須針對每個 樞軸接頭角度加以校正。控制器222可輸入Ζ位置之常數 值。例如’在樞軸接頭2459未具有角度時,假定基板於 電解質室中的位置校正在控制器222中的Ζ位置 為”Z = 2mm”。為了將基板22移動到Z = 6mm的位置(也就是 在先前位置4mm以上),上舉導軌將垂直的上昇4mm。為了 第82頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐 (請先閱讀背面之沒意事項再填寫本頁) ---------訂---------· 519677 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 完成此動作,控制器將啟動頭部上舉促動器2458將上舉 導軌2466沿著置放滑軌246〇位移到標準為”+栩‘,的位 置。 金屬薄膜’/儿積於基板上種子層每一點之沉積速率為 此點之廷流余度的函數。整個種子層半徑精確的電流密度 測量提供了在種子層之半徑上將會產生的沉積速率之指 示。假如整個種子之電流密度由基板之周圍到基板之中心 都為均勻不變的,則由於沉積速率為電流密度的函數,吾 人可假足整個電鍍表面之沉積速率也為固定的。加到基板 整個半徑之電流密度因而將以基板上之種子層在電解質 室中的高度而變化。Z位置便和整個基板之電流密度的一 致性(或均勻性)有一定之關係。電流密度經過整個種子層 (由基板之周圍到中心)之變化有數個原因。首先,電性接 觸元件67的位置較接近基板周圍而非中心。由於種子層 之材質具有一固定的阻抗,則靠近電性接觸元件之位置的 电‘达度將比遠離電性接觸元件之位置的電流密度要來 得高。此結果將使得靠近基板周圍之電流密度比基板中心 之電流密度來得高。 另一個加到基板上之種子層的電流密度變化原因係 和陽極與特別的種子層位置之間的垂直距離有關。電流由 陽極流過電解質室2 ί 2中所含的電鍍溶液到達基板上之種 子層。電解質室212中所含的電鍍溶液亦具有固定的阻 抗。由陽極流到陰極之電流將在其中找尋最直接的路徑以 降低阻抗。在大部分的例子中,如同第2圖之實施例中所 第83頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ▼裝--------訂---------. A7One of the available laser measurement tools is the METAPULSE® tool from Flanders, New Jersey. During operation, several substrates are plated under various conditions, such as changes in height Z, different shapes of substrates, and so on. The uniformity of the deposition thickness from the center to the edge of the substrate can be measured in each substrate using the techniques described above. In the embodiment shown in Fig. 6, the Z position of the substrate carrier relative to the electrolyte chamber can be corrected. This correction assumes that the slide rail 2460 is perpendicular to the head combination bracket 2452 for the pivot joint 2459, and the pivot joint 2459 is not at an angle as shown in the embodiment in FIG. If the pivot joint 2 4 5 9 has an angle, the Z position must be corrected for each pivot joint angle. The controller 222 can input a constant value of the Z position. For example, when the pivot joint 2459 does not have an angle, it is assumed that the position correction of the position of the substrate in the electrolyte chamber in the controller 222 is "Z = 2mm". In order to move the substrate 22 to a position of Z = 6mm (that is, 4mm or more in the previous position), the lifting guide will be vertically raised by 4mm. In order to apply the Chinese National Standard (CNS) A4 specification (210 X 297 meals) on page 82 (please read the unintentional matter on the back before filling this page) --------- Order ---- ----- · 519677 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (Complete this action, the controller will start the head lifting actuator 2458 and the lifting guide 2466 will slide along the placement. The orbit 246 ° is shifted to the position of "+ Xu" as standard. The deposition rate of each point of the metal film on the seed layer on the substrate is a function of the current margin of the point. The precise current density of the entire seed layer radius The measurement provides an indication of the deposition rate that will occur over the radius of the seed layer. If the current density of the entire seed is uniform from the periphery of the substrate to the center of the substrate, since the deposition rate is a function of the current density, we It can be assumed that the deposition rate of the entire electroplated surface is also fixed. The current density added to the entire radius of the substrate will therefore vary with the height of the seed layer on the substrate in the electrolyte chamber. The Z position is one of the current density of the entire substrate. There is a certain relationship between the property (or uniformity). There are several reasons for the change in current density through the entire seed layer (from the periphery to the center of the substrate). First, the position of the electrical contact element 67 is closer to the periphery of the substrate than to the center. The material of the layer has a fixed impedance, so the electrical reach of the position close to the electrical contact element will be higher than the current density of the position farther away from the electrical contact element. This result will make the current density near the substrate more than that of the substrate. The current density at the center is high. Another reason for the change in the current density of the seed layer added to the substrate is related to the vertical distance between the anode and the special seed layer position. The current flows from the anode through the electrolyte compartment 2 ί 2 The plating solution reaches the seed layer on the substrate. The plating solution contained in the electrolyte chamber 212 also has a fixed impedance. The current flowing from the anode to the cathode will find the most direct path among them to reduce the impedance. In most examples As shown in the example in Figure 2 on page 83, this paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the back of the precautions to fill out this page) ▼ loading Order -------- ---------. A7
519677 五、發明說明() 示的,陽極和種子層之間最短的路徑為彼此之間垂直的距 離。例如,由陽極到種子層之大部分電流一般將垂直陽極 表面16往上流動,到達最接近之種子層位置,並和種子 層之底部垂直的接觸。大部分例子中,陽極並沒有和基板 上之種子層相當大小的水平直徑❶例如,假如陽極1 6要 比基板2 2來得大,則由基板中心到周圍之整個種子層的 電流密度將會不同。並且由於種子層外形和陽極之外形不 同,基板上之種子層的某些部分將曝露在來自陽極較 南的電流。 另外’假如基板承載座14將基板22放置於離陽極16 較近或較遠的位置上,則陽極1 6到種子層之間整個電缝 溶液的阻抗值將會改變。當電解質室中基板之高度z增 加,則陽極1 6和種子層之間的阻抗值也會增加。當電缝 溶液之阻抗值增加,則由陽極到種子層之整個電流也會減 少,導致後續基板之沉積厚度的變化。電解質溶液之阻抗 的不規則性也會影響到整個基板不同位置的電流密度。高 度Z將影響到電解質溶液之阻抗值的一致性。 上述各個原因說明了整個基板之電流密度的變化產 生了金屬薄膜沉積速率之變化及金屬薄膜之沉積速率的 不一致性,而此電流密度係加到基板上種子層的種子屬半 徑上。在種子層之電流密度中包含了如此多的複雜因素, 因此很難精確的預測由基板的周圍到中心之整個種予展 之電流密度。類似地,金屬薄膜沉積速率包含了許多複雜 的因素,因此通常也很難預測沉積速率。通常較有用也幹 第84頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------------------訂--------- (請先閱讀背面之注意事項再填冩本頁) 經濟部智慧財產局員工消費合作社印製 519677 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 為精確的疋測I電流德、度或者整個種子層之沉積居 度。在第1圖所顯示之電鍍室實施例中,整個基板半徑之 電流密度之精確測量較為簡單’此時基板並不像第6圖所 示之電鍍製程室40 0在操作時加以旋轉。當基板在製程中 旋轉的實施例中’電流密度之感測器必需和基板一起,,旋 轉”。上面所述提供了電解質室中整個基板之半徑為基板 高度Z之函數時可控制之沉積厚度和速率均勻性的描述。 吾人可以想像整個基板半徑均勻的沉積速率可由改變基 板在電解室中不同的位置而加以控制。例如,在電解質室 中橫向移動基板可加強整個基板半徑之電流密度之均句 性。電解質室可配置成不同的水平橫截面形狀以加強沉積 速率之均勻性。吾人可以想像可轉動之頭部組合2 4丨〇可 在電解質室中不同的位置放置複數個基板^整個基板半徑 之沉積速率的均勻性可由曝露在不同測試位置之基板、電 解質室中不同的基板高度或橫向位置而加以決定。整個測 試基板半徑中複數個不同位置所得到的沉積速率均勻性 的實際曲線可儲存在控制器222中作為不同的參數。這些 參數可包括(但並不限於)製程時間、陽極和基板上種子層 之間的電流/電壓、電解質溶液之化學物組合…等等。在 進行電鍍時,可轉動之頭邵組合將基板放置在所需的位置 上,以提供整個基板上之種子層最適合的沉積特性。例 如,吾人可能需要中心厚度大於周圍厚度、邊緣厚度大於 周圍厚度、或者整個種子層由中心到周圍都有均勻的厚 度。為了提供所需的沉積方式,基板在電解質室中的位置 第85耳 ------------裝--------訂--------- ί請先閱讀背面之注音?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Μ 9677 五、發明說明() 將使得基板上之沉積金屬薄膜產生最接近的厚度形狀,且 基板將歷經同樣的製程。 ,另一個在電解質室中,,放置,,基板以便沿著種予層之 半徑改變沉積厚度均勻性之實施例包含了改變基板:: 〈垂直截面形狀。例如,基板22可能在某方向呈,,狐形,,, 因而基板之中心便和基板之周圍不為同平面,也就是基板 為彎曲的。基板呈彎曲狀可由第27圖之實施例中所=由 可轉動 < 頭部组合2410的操作來提供。其它可以置敌美 板或使其變形的裝置並讓基板的不同部分距陽極有不= 距離亦在本發明之範圍内.假定推擠板66接觸其上半表 面,或者包括了例如檔板之偏壓裝置和其上表面接觸。同 時也假定推擠板接觸基板的位置其半徑要比電性接觸^ 件67接觸基板之底部表面之周圍的半徑來得小❶η表示 由電性接觸元件67加到基板下半部表面之向上施力。= 代表由推擠板66加到基板上半部表面之二個向下施力。 在一般的操作狀況下施力Π的大小等於施力F2的大小, 因為在基板上只有此些垂直施力’且基板並不會有垂直的 位移。由於F1係加到基板22外面且和F2有一段距離, 在其平衡下基板將呈現彎曲狀。 假定可轉動之頭部組合241〇在一定的方位承載基 板,則不考慮其彎曲程度下,基板2 2之中心2 9 〇 2要比基 板之周圍2904來得低。如第6圖所示之電鍍製程室4〇〇 t實施例中若陽極比基板來得低時,中心29〇2和陽極的 距離要比周圍2904接近。如此一來,由於從陽極到中心 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297 ^ 裝--------訂--------- (請先閱讀背面之注幸?事項再填寫本頁} 519677 經濟部智慧財產局員工消費合作社印製 A7 B7_ 五、發明說明() 2 9 0 2之電解質溶液比到周圍2 9 0 4具有較小之阻抗,則中 心之沉積速率應該超越周圍之沉積速率。利用此種彎曲可 使得基板中心之沉積速率比基板周圍之沉積速率增加。在 金屬薄膜沉積於種子層上靠近周圍比中心有較高速率的 情況,此種彎曲方式可使得整個基板上之種子層具有較為 均勻之沉積厚度。 上面所述僅為本發明之較佳實施例而已,在不偏離本 發明之基本範圍下可產生其它的實施例,而此範圍則由下 述之申請專利範圍所定義。 第87頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------^^裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁)519677 V. The description of the invention () shows that the shortest path between the anode and the seed layer is the vertical distance between each other. For example, most of the current from the anode to the seed layer will generally flow up the vertical anode surface 16 up to the nearest seed layer position and make vertical contact with the bottom of the seed layer. In most cases, the anode does not have a horizontal diameter comparable to the seed layer on the substrate. For example, if the anode 16 is larger than the substrate 22, the current density from the center of the substrate to the surrounding seed layer will be different. . And because the shape of the seed layer is different from the shape of the anode, some parts of the seed layer on the substrate will be exposed to the current from the south of the anode. In addition, if the substrate carrier 14 places the substrate 22 near or far away from the anode 16, the impedance value of the entire electrical gap solution between the anode 16 and the seed layer will change. When the height z of the substrate in the electrolyte chamber increases, the impedance value between the anode 16 and the seed layer also increases. When the resistance value of the electrical gap solution increases, the entire current from the anode to the seed layer also decreases, resulting in a change in the thickness of the subsequent substrate deposition. Irregularities in the impedance of the electrolyte solution will also affect the current density at different locations throughout the substrate. The high Z will affect the consistency of the impedance value of the electrolyte solution. Each of the above reasons explained that the change in the current density of the entire substrate caused a change in the deposition rate of the metal thin film and an inconsistency in the deposition rate of the metal thin film, and this current density was added to the seed radii of the seed layer on the substrate. There are so many complex factors in the current density of the seed layer, so it is difficult to accurately predict the current density of the entire species from the substrate to the center. Similarly, the deposition rate of metal thin films involves many complex factors, so it is often difficult to predict the deposition rate. It is usually more useful and useful. Page 84 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) --------------------- Order- -------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Precise measurement of I current, degree, or depositional density of the entire seed layer. In the embodiment of the electroplating chamber shown in Figure 1, the accurate measurement of the current density of the entire substrate radius is simpler. 'At this time, the substrate is not like the first The electroplating process chamber 400 shown in Fig. 6 is rotated during operation. In the embodiment where the substrate is rotated during the process, the "current density sensor must be rotated with the substrate". The electrolyte chamber is provided above. Description of the controllable deposition thickness and rate uniformity when the radius of the entire substrate is a function of the substrate height Z. I can imagine that the uniform deposition rate of the entire substrate radius can be controlled by changing the substrate's different positions in the electrolysis chamber. For example, in Electrolyte compartment Moving the substrate to the right can strengthen the uniformity of the current density over the entire substrate radius. The electrolyte chamber can be configured with different horizontal cross-sectional shapes to enhance the uniformity of the deposition rate. I can imagine a rotatable head combination 2 4 丨 〇 Multiple substrates are placed at different locations in the electrolyte chamber ^ The uniformity of the deposition rate across the entire substrate radius can be determined by the substrates exposed at different test locations, different substrate heights, or lateral positions in the electrolyte chamber. Multiple of the entire test substrate radius The actual curves of the deposition rate uniformity obtained at different locations can be stored in the controller 222 as different parameters. These parameters can include (but are not limited to) process time, current / voltage between the anode and the seed layer on the substrate, Chemical composition of electrolyte solution ... etc. During electroplating, the rotatable head assembly places the substrate at the desired position to provide the most suitable deposition characteristics for the seed layer on the entire substrate. For example, we may need Center thickness is greater than surrounding thickness, edge thickness is greater than surrounding thickness, or entire The sublayer has a uniform thickness from the center to the surroundings. In order to provide the required deposition method, the substrate is positioned at the 85th ear in the electrolyte chamber. -Order --------- ί Please read the phonetic on the back? Matters before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, M 9677 V. Description of the invention () Will cause the deposition of metal on the substrate The thin film produces the closest thickness shape, and the substrate will go through the same process. Another example of placing the substrate in the electrolyte chamber to change the thickness uniformity of the deposition along the radius of the seed layer includes changing the substrate: : <Vertical cross-sectional shape. For example, the substrate 22 may have a fox shape in a certain direction, so the center of the substrate and the periphery of the substrate are not in the same plane, that is, the substrate is curved. The curved substrate can be provided by the operation of the rotatable < head assembly 2410 in the embodiment of FIG. 27. Other devices that can be placed against or deformed and have different parts of the substrate at a distance from the anode are also within the scope of the present invention. It is assumed that the push plate 66 contacts its upper half surface, or includes, for example, a baffle plate. The biasing device is in contact with its upper surface. At the same time, it is also assumed that the radius of the position where the pushing plate contacts the substrate is smaller than the radius around the bottom surface where the electrical contact member 67 contacts the substrate. . = Represents two downward forces applied by the pushing plate 66 to the upper half of the surface of the substrate. Under normal operating conditions, the magnitude of the force Π is equal to the magnitude of the force F2, because there are only these vertical forces on the substrate and the substrate does not have a vertical displacement. Since F1 is added to the outside of the substrate 22 and has a distance from F2, the substrate will appear curved under its balance. Assuming that the rotatable head assembly 2410 carries the substrate in a certain orientation, regardless of its degree of bending, the center 2 9 2 of the substrate 2 is lower than the periphery 2904 of the substrate. In the example of the electroplating process chamber 400t shown in FIG. 6, if the anode is lower than the substrate, the distance between the center 2902 and the anode is closer than the surrounding 2904. As a result, since the paper size from the anode to the center applies the Chinese National Standard (CNS) A4 specification (210 x 297 ^ Pack -------- Order --------- (Please read the back first Fortunately, please fill in this page again. 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7_ 5. Description of the invention () The electrolyte solution of 2 9 0 2 has a smaller impedance than the surrounding 2 9 0 4 The deposition rate at the center should exceed the surrounding deposition rate. Using this bending can increase the deposition rate at the center of the substrate compared to the deposition rate around the substrate. In the case where the metal film is deposited on the seed layer near the periphery with a higher rate than the center, this This bending method can make the seed layer on the entire substrate have a relatively uniform deposition thickness. The above description is only a preferred embodiment of the present invention, and other embodiments can be produced without departing from the basic scope of the present invention. The scope is defined by the following patent application scope. Page 87 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ ^^ 装- ------- Order --------- (Please read the back first Notes on filling out this page)
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US09/687,053 US6837978B1 (en) | 1999-04-08 | 2000-10-12 | Deposition uniformity control for electroplating apparatus, and associated method |
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TW519677B true TW519677B (en) | 2003-02-01 |
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Application Number | Title | Priority Date | Filing Date |
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TW90125342A TW519677B (en) | 2000-10-12 | 2001-10-12 | Deposition uniformity control for electroplating apparatus, and associated method |
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TW (1) | TW519677B (en) |
WO (1) | WO2002031227A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI453947B (en) * | 2011-08-05 | 2014-09-21 | Univ Chang Gung | Manufacturing method of electro - optical diode for electroforming |
TWI566314B (en) * | 2014-07-31 | 2017-01-11 | 日立國際電氣股份有限公司 | Substrate processing apparatus, non-transitory computer-readable recording medium thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3052869B1 (en) * | 2016-06-17 | 2018-06-22 | Unity Semiconductor | DEVICE FOR POSITIONING AN INTEGRATED CIRCUIT PLATE, AND APPARATUS FOR INSPECTING AN INTEGRATED CIRCUIT PLATE COMPRISING SUCH A POSITIONING DEVICE |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000032835A2 (en) * | 1998-11-30 | 2000-06-08 | Applied Materials, Inc. | Electro-chemical deposition system |
US6837978B1 (en) * | 1999-04-08 | 2005-01-04 | Applied Materials, Inc. | Deposition uniformity control for electroplating apparatus, and associated method |
-
2001
- 2001-10-12 TW TW90125342A patent/TW519677B/en not_active IP Right Cessation
- 2001-10-12 WO PCT/US2001/031943 patent/WO2002031227A2/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI453947B (en) * | 2011-08-05 | 2014-09-21 | Univ Chang Gung | Manufacturing method of electro - optical diode for electroforming |
TWI566314B (en) * | 2014-07-31 | 2017-01-11 | 日立國際電氣股份有限公司 | Substrate processing apparatus, non-transitory computer-readable recording medium thereof |
Also Published As
Publication number | Publication date |
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WO2002031227A2 (en) | 2002-04-18 |
WO2002031227A3 (en) | 2005-08-18 |
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