TW514751B

TW514751B - Dual-panel active-matrix organic electroluminescent display

Info

Publication number: TW514751B
Application number: TW90125355A
Authority: TW
Inventors: Cheng-Xian Han; Heng-Long Yang; Feng-Yu Chuang; Yung-Hui Yeh; Yuan-Chang Huang
Original assignee: Ind Tech Res Inst
Priority date: 2001-10-08
Filing date: 2001-10-08
Publication date: 2002-12-21

Abstract

There is provided a dual-panel active-matrix organic electroluminescent display, which includes an organic electroluminescent display panel, an active device panel and conductive material between the two panels. These two panels form a composite structure and the conductive material between the two substrates is used as a combining layer. The method for manufacturing this dual-panel active-matrix organic electroluminescent display comprises the manufacture of the organic electroluminescent display panel, the manufacture of the active device panel, and bonding of the conductive material for combining the two panels. The two panels can be made separately, thereby increasing the circuit layout area of polysilicon TFT. Alternatively, amorphous TFT is used with n-channel source follower to implement the circuit and solve the problem in uneven illumination effect, thereby increasing the resolution of the electroluminescent display. When bonding is performed by thermal pressing, no transparent area is reserved in the pixels of the lower plate. When illuminating by ultraviolet, only a small amount of transparent area is reserved for curing by ultraviolet. Accordingly, the illuminating area of the electroluminescent display is nearly 100%.

Description

514751514751

本發明係關於有機發光顯示器（organic electroluminescent display)。特別是關於一種使用雙基板（dual panel)結構的全彩（full c〇l〇r)主動式 (active matrix)有機發光顯示器。發明背景平面顯示器（flat panel display)是目前最重要的電子應用產品之一，舉凡電視、儀器的顯示幕，筆記型電月齒產品等顯示幕。而有機發光顯示元件具有自發光（1丨ght emitting)、高亮度（high luminance)、廣視角（wide viewing angle)、高應答速度（fast response speed)、高穩定性（high rel iabi 1 i ty)、全彩色、低驅動電壓（i〇w voltage driving)、低耗電量（low power consumption) 及製程簡易（simple process)等優點。此種產品無疑的將成為時下平面顯示器的主流。傳統被動式（passive)有機發光顯示元件，雖製作成本便宜、製程簡單，但解析度不佳，只能做小尺寸、低解析度的顯示器。而主動式驅動，如薄膜電晶體（th i n f i 1阳 transistor ’TFT)的有機發光顯示元件則具高解析度、高亮度及低耗電特質。一般而言，主動式驅動是高解析度畫The invention relates to an organic electroluminescent display. In particular, it relates to a full color active matrix organic light emitting display using a dual panel structure. BACKGROUND OF THE INVENTION Flat panel displays are currently one of the most important electronic application products, such as display screens for televisions, instruments, and notebook-type electric crescent products. The organic light-emitting display element has self-emission (1 丨 ght emitting), high luminance (high luminance), wide viewing angle (wide viewing angle), high response speed (fast response speed), high stability (high rel iabi 1 i ty) , Full color, low driving voltage (iow voltage driving), low power consumption (low power consumption) and simple process (simple process). This kind of product will undoubtedly become the mainstream of the current flat panel display. Traditional passive organic light-emitting display elements, although cheap to produce and simple to process, have poor resolution and can only be used for small-sized, low-resolution displays. Organic light-emitting display elements, such as thin film transistors (thi n f i 1 transistor TFT), have high resolution, high brightness, and low power consumption. Generally speaking, active driving is high-resolution drawing

第5頁 514751 五、發明說明（2) 質驅動技術的主流。當顯示器的尺寸越做越大，解析度的要求越來越高，以及全彩化的需求的情況下，全彩化的主動式驅動有機發光顯示元件勢必成為一個主要的趨勢。在美國專利5, 550, 066的文獻裡，揭露了一種製作薄膜電晶體有機電激發光（organic emitting light，OEL) 元件之畫素結構與製程。圖1 a和圖1 b分別為此薄膜電晶體有機電激發光元件的一平面（p 1 a n v i e w)概要示意圖，及一剖面（c r 〇 s s s e c t i ο n a 1 )結構示意圖。 ._ 如圖1 a所示，此薄膜電晶體電激發光元件1 〇〇的畫素元件結構主要包含兩個薄膜電晶體1 0 1和1 〇 2、一個電容儲存器（storage capacitor)103、和一個置於基板上的光發射有機電激發光塾（light emitting organic EL pad) 1 〇 4。薄膜電晶體1 〇 1以源匯流排（s our ce bus ) 1 0 5作為資料線（data line)，以閘匯流排（gate bus)106作為閘線 (gate line)，而接地匯流排（ground bus)107在閘匯流排和電容儲存器的下方。薄膜電晶體101的源電極（souree electrode)電性連結至一源匯流排，其閘電極（gate electrode)則包含了一閘匯流排的一部分。光發射有機電激發光墊104與薄膜電晶體102的汲極（drain)電性連結 (electrically connected)。薄膜電晶體101的汲極與薄膜電晶體1 02的閘電極電性連結。此薄膜電晶體有機電激發光元件基本上是一些形成一平面顯示器的畫素單元Page 5 514751 V. Description of the invention (2) Mainstream of mass drive technology. As the size of the display becomes larger and larger, and the requirements for resolution become higher and higher, and full color is required, the active driving of organic light-emitting display elements with full color is bound to become a major trend. In US Pat. No. 5,550,066, a pixel structure and a process for fabricating an organic emitting light (OEL) element of a thin film transistor are disclosed. FIG. 1 a and FIG. 1 b are respectively a schematic view of a plane (p 1 a n v i e w) and a cross-sectional view (c r s s s e c t i ο n a 1) of the thin film transistor organic electro-optic light-emitting device. ._ As shown in Fig. 1a, the pixel element structure of the thin film transistor electro-optic light emitting element 100 includes two thin film transistors 101 and 102, a storage capacitor 103, And a light emitting organic EL pad 104 placed on the substrate. The thin film transistor 1 〇1 uses a source bus (s our ce bus) 105 as a data line, a gate bus 106 as a gate line, and a ground bus bus) 107 is under the gate bus and capacitor storage. A source electrode of the thin film transistor 101 is electrically connected to a source bus, and a gate electrode thereof includes a part of a gate bus. The light-emitting organic electrical excitation light pad 104 and the drain of the thin film transistor 102 are electrically connected. The drain of the thin film transistor 101 is electrically connected to the gate electrode of the thin film transistor 102. The thin film transistor organic electroluminescent light emitting element is basically a pixel unit forming a flat display.

五、發明說明（3) (pixel uni t)所構成。攸圖1 b的剖面結構示意圖，說明此薄膜電晶體有機電，發光元件之畫素元件結構的製作流程。如圖lb所示，多晶矽島丘（？〇15^;[14〇1141抓(3)118植入在絕緣基板 (insulting substrate)111的上方後，再覆蓋第一層閘絕緣層（gate insuiating layer)112，閘絕緣層 112 的上方植入一聚合石夕閘（poly —si以4)層114，以使源極 (source)和汲極區域在離子植入（i〇n implantati〇n)後，形成在此閘絕緣層11 2之内。離子植入係以N型攙雜物 (dopant)導通。閘匯流排116成形在絕緣層112上，在此發光元件表面上再覆盍第二絕緣層1丨3，此絕緣層11 3上挖出兩個接觸孔，並使用電極材料與薄膜電晶體形成電性導通。附在薄膜電晶體1 〇2的電極材料同時形成電容儲存器 103的頂層電極（top electr〇de)122。源匯流排和接地匯流排也形成在第二絕緣層113上。頂層電極122與薄膜電晶體102的源極接觸，而對應與薄膜電晶體1〇2的汲極接觸乃作為有機電激發光材料的陽極電極層（an〇de electr〇de layer)136上。接著，有機電激發光元件的表面上植入— ，、、、邑緣材料的隔離層（paSSiVating layer)124。此隔離層召置逐漸變小的邊緣（tapered edge)，來增強與所使用的有機電激發光層132之間的黏著度。有機電激發光層132 係植入在隔離層124和陽極層136的上方。最後，有機電激發光元件的表面上再植入一層陰極電極層（cath〇de 514751 五、發明說明（4) electrode layer) 134 〇傳統的主動式驅動有機發光顯示元件的結構在驅動有機發光二極體的電晶體時必須使用下列方式之一來製作：5. Description of the invention (3) (pixel uni t). The schematic cross-sectional structure of FIG. 1b illustrates the manufacturing process of the pixel element structure of the thin-film transistor organic light-emitting element. As shown in FIG. Lb, polycrystalline silicon island hills (? 〇15 ^; [14〇1141) (3) 118 are implanted above the insulating substrate 111, and then covered with a first gate insuiating layer. ) 112, a polysilicon gate (poly 4 to 4) layer 114 is implanted above the gate insulation layer 112, so that the source and drain regions are after ion implantation Is formed in the gate insulating layer 112. The ion implantation is conducted by N-type dopant. The gate bus 116 is formed on the insulating layer 112, and a second insulating layer is covered on the surface of the light-emitting element. 1 丨 3, two contact holes are dug out of the insulating layer 11 3, and the electrode material is used to form electrical conduction with the thin film transistor. The electrode material attached to the thin film transistor 1 〇2 also forms the top electrode of the capacitor storage 103 (Top electrode) 122. A source bus bar and a ground bus bar are also formed on the second insulating layer 113. The top electrode 122 is in contact with the source of the thin film transistor 102, and corresponds to the drain of the thin film transistor 102. Contact is the anode electrode layer (an〇de electr〇de la yer) 136. Next, a paSSiVating layer 124 is implanted on the surface of the organic electro-excitation light element. This isolating layer calls for tapered edges to come. Enhance the adhesion to the organic electroluminescent layer 132. The organic electroluminescent layer 132 is implanted above the isolation layer 124 and the anode layer 136. Finally, the surface of the organic electroluminescent layer is re-implanted. A cathode electrode layer (cathode 514751 V. Description of the invention (4) electrode layer) 134 〇 The structure of the traditional active driving organic light-emitting display element must use one of the following methods to drive the organic light-emitting diode transistor Production:

(1)源極跟隨p-通道（source follow p-channel)的 TFT，並配合常態型（normal type)有機電激發光（organic electric luminance，〇EL)的製程，將發光層與TFT-陣列 (TFT-array)製作在同一片基板上，光源經由TFT基板透光而出’在主動元件佈局（layout)區域無法發光， TFT-array 發光面積（aperture rati〇)通常只有 1〇〜30%，未來在提高解析度將會遇到瓶頸。 (2)源極跟隨n —通道（s〇urce f〇n〇w n-chan n el )的薄膜電晶體’並配合逆向型（invert type)0EL的結構。而現今逆向型0EL的製程相較常態型〇EL的製程，並不成熟。而以系L型0EL製程者其發光效率比逆向型〇el製程者高出 1〜2個級數。因此（2 )的結構方式可行性並不高。(1) Source follow p-channel (TFT) source, and in conjunction with a normal type organic electric luminance (OLED) process, the light emitting layer and the TFT-array ( TFT-array) is fabricated on the same substrate, and the light source is transmitted through the TFT substrate. 'Cannot emit light in the active device layout area. The TFT-array emission area (aperture rati0) is usually only 10 ~ 30%. In the future, There will be bottlenecks in improving the resolution. (2) A structure in which the source electrode follows a thin film transistor of n-channel (source fnow n-chan n el) and cooperates with an inverted type OEL. However, the process of the reverse type 0EL is immature compared with the process of the normal type 0EL. The luminous efficiency of the L-type OEL process is 1 to 2 stages higher than that of the reverse-type Oel process. Therefore, the feasibility of the structural method of (2) is not high.

石另/卜，若採用多晶矽（poly-Si)TFT製程，則由於多晶In addition, if a poly-Si TFT process is used,

, σ界電壓變動的關係’使用此方法來實作主動式〇 E 很難展現出灰階的層次（g r a y 1 e ν e 1 )。沈吩下的發展情形，全彩的主動式驅動有機發光顯示, The relationship of σ-boundary voltage variation ’Using this method to implement the active formula θ E is difficult to show the gray level (g r a y 1 e ν e 1). Development situation under Shen Fen, full-color active driving organic light-emitting display

第8頁 314751Page 8 314751

器要攻佔平面顯示器的市場，出另一高效能的全彩主動式有發明概要必須去克服上述問題，發展機發光顯示器。要目ϋ:ΐ服傳統有機發光二極體顯示器的缺點。其主 ' 疋 k供一種雙基板主動式有機發光§貞示。此有機發光顯示器主要包含上Μ1 f ^^為 ^ ^ ^ , ^ , 时王旻匕3上層有機發光顯示基板、下層 I k &德:板L和介於此雙基板之間的導電材質，而此雙土、的復合結構，其兩基板之間係以此導電材質做在本發明之較佳實施例中，此上層有機發光顯示基板主要包括一透明基板、一層鍍在基板上方的銦錫氧化物 (indium tin oxide，ITO)、一層鑛在銦錫氧化物層上方的0EL膜（film)、一層鍍在〇el膜上方的陰極層（cath〇de layer) ’和一層覆蓋的絕緣層（passvati〇rl iayer)。在陰極層上方並留有窗口（ wi n(jow)，作為與下層主動元件基板接觸（contact)的區域。此貫施例中’下層主動元件基板係一 T F T面板（p a n e 1 ) ，此TFT面板上的單一晝素包含有掃描匯流排線（scan bus line)、資料匯流排線（data bus line)，和主動驅動電路佈局部分。畫素内並包含一塊與上層基板作為黏合並導電In order to capture the market of flat-panel displays, another high-performance full-color active type has to be summarized. SUMMARY OF THE INVENTION The above-mentioned problems must be overcome to develop machine-emitting displays. Objective: To overcome the shortcomings of traditional organic light-emitting diode displays. Its main device is a dual-substrate active organic light emitting device. This organic light-emitting display mainly includes the upper M1 f ^^ as ^ ^ ^, ^, when the upper layer of the organic light-emitting display substrate 3, the lower layer I k & Germany: the plate L and the conductive material interposed between the two substrates, and this A two-soil, composite structure with two conductive substrates made of conductive material in the preferred embodiment of the present invention. The upper organic light-emitting display substrate mainly includes a transparent substrate and a layer of indium tin oxide plated on the substrate. (indium tin oxide, ITO), a layer of OEL film (mine) over the indium tin oxide layer, a cathode layer ('cathode layer') plated on top of the oel film, and a covered insulating layer (passvati). rl iayer). A window (wi n (jow)) is left above the cathode layer as a contact area with the lower active element substrate. In this embodiment, the 'lower active element substrate is a TFT panel (pane 1), which is a TFT panel. The single day element on the device includes a scan bus line, a data bus line, and an active drive circuit layout. The pixel contains a conductive layer that is bonded to the upper substrate to conduct electricity.

^/51 五、發明說明（6) 白勺接觸區域依此，兩基板之間的導電材質層將此雙基板 t束。此導電材質έ士人声為非堃a 子位勘合棧。卩分導電，橫向並不會導電。上下有電本發明之另一目的是，提供· ，光顯示器的方法。此製造方法主要包含；：J:飞有機質的接合方式。和結合此兩板之導電材二據士發明，Λ雙基板主動式有機發光顯示土板可以为別製作，主動元件面板書兩片匸戍或僅需要預留小部分透明區域供f*##πιν>#導先㈣叫），發光面積接近1〇〇%。 “外^〇熱固（茲配合下列圖式、實施例之詳細說圍’將上述及本發明之其他目的與優點詳述於后。叫乾發明之詳細說明圖2為根據本發明之雙基板主動式 -平面概要示意圖。此雙基板主動式式有有機機蝥基柘胼嫌丄、λ w ^ „ I Α發光> 顯不器係以五、發明說明（7) t為結合、層。其中一層基板為全彩或是單色有機發光顯示土板（稱為上板）211，其架構可以常態型或是逆向型的結構來製作，OEL材料可以是高分子與小分子系列，基板可以是玻璃基板或是塑膠基板。另一層基板為主動元件面板 %為下板）221，其架構可以是多晶矽或是非晶矽^了基板。而接合此兩板的導電材質231可以是異方性導電膜 (Anisotropic Conductive Film，ACF)、異方性導電膠 (Anisotropic Conductive Adhesive，ACA)、導電樹脂 (conducting resin)、銀膠（Ag ep〇xy)、或是金蜃凸塊 (metal bump)等。接合方式為紫外線照射或是熱固 (thermal curing)。導電材質的阻值介於每平方〇•卜1〇6 歐姆。以下說明此雙板的製作流程和剖面結構。圖3a〜圖3d依序說明製造本發明之上板的流程。首先在備有頂部和底部表面的透明基板3丨丨的頂部表面上鍍上一層透明材質層3 1 5如I TO，如圖3a所示。再鍍上已圖樣化的（patterned)OEL膜321，如圖3b所示，其製程在小分子有機發光二極體（0LED)可以影罩（shad〇w mask)方式處理，高分子0LED可以用喷墨印刷（inkjet print)方式處理等。0EL膜可以是電洞傳輸層、有機發光層（〇rganic light layer，0LL)、電子傳輸層等。接著鍍上陰極層 (cathode)331，如圖3c所示，此陰極層可以是銘等金屬。^ / 51 V. Description of the invention (6) Contact area According to this, the conductive material layer between the two substrates bundles the two substrates. The voice of this conductive material is a non- 堃 a sub-position survey stack. It is conductive, but it does not conduct in the lateral direction. Power on and off Another object of the present invention is to provide a method for light display. This manufacturing method mainly includes: J: flying organic matter bonding method. According to the invention of the two conductive materials combined with the two plates, the Λ dual-substrate active organic light-emitting display clay plate can be made separately. Two pieces of active component panel books or only a small part of the transparent area need to be reserved for f * ## πιν &######## "Outer thermosetting (in conjunction with the following drawings and detailed description of the examples), the above and other objects and advantages of the present invention will be described in detail below. Called a detailed description of the dry invention Figure 2 is a dual substrate according to the present invention Active-planar schematic diagram. This dual-substrate active type has organic components, λ w ^ I Α luminescent, and the display device is based on the fifth and seventh invention description (7) t as the combination and layer. One layer of the substrate is a full-color or monochrome organic light-emitting display soil plate (called the upper plate) 211. Its structure can be made of a normal type or a reverse type structure. The OEL material can be a polymer and small molecule series, and the substrate can be It is a glass substrate or a plastic substrate. The other layer of the substrate is the active device panel (the bottom plate is the lower plate) 221, and its structure can be a polycrystalline silicon or an amorphous silicon substrate. The conductive material 231 joining the two plates may be an anisotropic conductive film (ACF), anisotropic conductive adhesive (ACA), conductive resin, silver glue (Ag ep〇). xy), or metal bumps. The bonding method is ultraviolet irradiation or thermal curing. The resistance of the conductive material is between 1.06 ohms per square. The following describes the manufacturing process and cross-sectional structure of this double plate. 3a to 3d sequentially illustrate the process of manufacturing the upper board of the present invention. First, a transparent material layer 3 1 5 is plated on the top surface of the transparent substrate 3 丨 with top and bottom surfaces, as shown in Figure 3a. Then, a patterned OEL film 321 is plated. As shown in FIG. 3b, the manufacturing process of the small-molecule organic light-emitting diode (0LED) can be processed by a shadow mask, and the polymer 0LED can be used. Inkjet print processing. The OEL film may be a hole transport layer, an organic light emitting layer (ORL), an electron transport layer, and the like. Next, a cathode layer 331 is plated. As shown in FIG. 3c, the cathode layer may be a metal such as Ming.

第11頁 514751 五、發明說明（8) 最後，覆上絕緣層（passvation layer)341，如圖3d所示，作為晝素（p i xe 1)之間的絕緣體，並防止水、氧傷害該0EL膜321。另外，值得一提的是在陰極層上方必須有窗口，作為與下層主動元件面板接觸的區域。圖4係根據圖3製作完成之上層有機發光顯示基板的一剖面結構示意圖。 & 圖5係根據本發明之下層主動元件基板上單一書素的示意圖。如圖5所示，在單一晝素内包含有掃描匯流排線 (scan bus line)501(可能為一條或多條金屬線）、資料匯流排線（data bus line) 502 (可能為一條或多條金屬線），以及主動驅動電路佈局部分503。晝素内需包含一塊與上板作為黏合並導電的接觸區域504。 η 本發明之實施例中，此下層主動元件基板係—TFT面板’可以是多晶石夕或是非晶石夕TFT ’其結構設計為此領域者所熟悉，其一剖面結構示意圖如圖6a所示。參照此圖^ 簡單說明如下：（a)玻離基板6 11的上方為一緩衝層（bu ^ ^r layer)621，（b)在緩衝層621的上方植入一聚合i(p〇ly^ si)或非晶矽層631，用以定義TFT的源極區域631&和沒極區域631b，（c)利用一結晶和蝕刻方式來定義並形成/一聚合結晶矽島丘6 4 1，（ d)在聚合結晶矽島丘6 41的上方植Λ 電性材料以形成一閘層651，（e)在該閘層651的上方和^Page 11 514751 V. Description of the invention (8) Finally, as shown in Fig. 3d, an insulation layer (passvation layer) 341 is covered, as an insulator between pi xe 1 and water and oxygen are prevented from damaging the 0EL Film 321. In addition, it is worth mentioning that there must be a window above the cathode layer as an area in contact with the lower active device panel. FIG. 4 is a schematic cross-sectional structure diagram of the upper organic light-emitting display substrate manufactured according to FIG. 3. & Fig. 5 is a schematic diagram of a single element on a substrate of an underlying active device according to the present invention. As shown in FIG. 5, a single day element includes a scan bus line 501 (may be one or more metal lines), a data bus line 502 (may be one or more) Metal lines), and the active driving circuit layout section 503. It is necessary to include a contact area 504 with the upper plate as a conductive bond. η In the embodiment of the present invention, the underlying active element substrate system—the TFT panel may be a polycrystalline or amorphous TFT. Its structural design is familiar to those skilled in the art, and a schematic cross-sectional structure is shown in FIG. 6a. Show. Referring to this figure, ^ is briefly explained as follows: (a) a buffer layer (bu ^ ^ r layer) 621 is above the glass substrate 611; (b) a polymer i (p0ly ^) is implanted above the buffer layer 621; si) or amorphous silicon layer 631, which is used to define the source region 631 & and the non-polar region 631b of the TFT, (c) using a crystallization and etching method to define and form / a polymerized crystalline silicon island hill 6 4 1, ( d) planting an electrically conductive material over the polymerized crystalline silicon island mound 6 41 to form a gate layer 651, (e) above the gate layer 651 and ^

第12頁 514751 五、發明說明（9) ' - 聚合結晶石夕島丘6 4 1的上方，再植入一中間層 (interlayerHei，（f)之後，再挖出接觸孔曰，並於中間声 661的上方再覆蓋一層金屬層671，（g)金屬層6?1的上方: 覆蓋一層隔離層681(可為光阻材料或是非光阻材料），（h) 之後，，利用一黃光製程（photolith〇graphy pr〇cess)，使用一光罩圖案，經曝光和顯影後，蝕刻隔分後，塗佈-層光阻型彩色遽光片，在中間層661=上= 定義一彩色濾光片6 9 1，（ i)最後，在隔離層6 8 J、彩色濾光片691及整個表面的上方，再植入一層透明材質層6ΐ〇ι ，如銦錫氧化物，作為陽極電極層，並與另一薄膜9電晶體的汲電極電性連結。圖6b係圖6a的簡示圖。上下板製作完成後，必須在其中一塊板塗上一層導電並黏合（conducting and adhesive)的材質711，以畫素對晝素（pixel to pixel)將此雙板對位黏合起來，如圖7a所示。由於導電並黏合的材質是非等向性導體（類似虹门，所以只有上下有電極部分才會導電，橫向並不會導電。圖 7 b所示為雙板黏合後之紅、綠、藍三種光色的三晝素整體示意圖。接合此雙板的方式可以熱固或是紫外線照射處理，導電並黏合的材質也隨之不同。圖8a所示為以熱空氣（hot a i r) 811分別加在上板的透明基板3 11表面和下板的玻璃基板611表面，並以低溶點（low melting point)的金屬凸塊Page 12 514751 V. Description of the invention (9) '-Above the polycrystalline crystalline stone Xijiu Qiu 6 4 1, an intermediate layer (interlayerHei, (f)) is implanted, and then the contact hole is dug out, and the middle sound A layer of metal layer 671 is overlaid on top of 661. (g) A layer of metal 6-1 is overlaid on top: a layer of isolation layer 681 (can be a photoresist material or a non-photoresist material). (H) After that, a yellow light process is used. (Photolith〇graphy pr〇cess), using a mask pattern, after exposure and development, after etching the partition, coating-layer photoresistive type color phosphor film, on the intermediate layer 661 = on top = defining a color filter Sheet 6 91, (i) Finally, a layer of transparent material, such as indium tin oxide, is implanted as an anode electrode layer on top of the isolation layer 6 8 J, the color filter 691, and the entire surface. It is electrically connected to the drain electrode of another thin-film transistor. Figure 6b is a schematic diagram of Figure 6a. After the upper and lower boards are manufactured, one of the boards must be coated with a conductive and adhesive material 711. , The pixel to pixel (pixel to pixel) to glue the two plates in position, as shown in the figure As shown in Figure 7a. Because the conductive and bonded material is an anisotropic conductor (similar to the rainbow gate, only the upper and lower electrode parts will conduct electricity, and it will not conduct in the horizontal direction. Figure 7b shows the red and green after the two plates are bonded. The three schematic diagrams of the three colors of blue and blue. The method of joining the two plates can be treated by thermosetting or ultraviolet irradiation, and the conductive and adhesive materials are also different. Figure 8a shows hot air 811. Add on the surface of the transparent substrate 3 11 of the upper plate and the surface of the glass substrate 611 of the lower plate, and use low-melting point metal bumps.

第13頁 514751 五、發明說明（10) 812作為導電並黏合的材質。圖gb所示為加壓（pressure) 821於上板之透明基板mi表面上的加熱器（heater)M2，並以^外光（UV light) 823照射下板的玻璃基板611表面，而=紫外光可固化的異方性導電膠825作為導電並黏合的材貝。圖8c所示為熱壓（heat and pressure)831於上板之透明基板311表面上的加熱器822，並以異方性導電膜827 作為導電並黏合的材質。圖8所使用的這些導電並黏合材質的阻值介於每平方0·1〜1〇6歐姆。、採用熱壓方式時，下板的晝素無需預留透明導光區域。採用紫外光照射時，僅需要預留小部分透明區域供叭熱固。依此，本發明之發光顯示器的發光面積接近100%。制甚且，由於本發明將發光層與TFT-陣列（TFT-array) 製作在不同基板上，光源可經由TFT基板透光而出，因而 γ以增加多晶矽TFT電路佈局區域，並解決發光效果不均勻的問通。也可以用非晶石夕T f τ，以n -通道源極跟隨型式 n channel source f〇u〇w type)的電路來解決發光效果不均勻的問題。因而提高發光顯示器的解析度。板由於分別製作，也提高其產量和良率。而兩片基綜上所述，本發明使用雙基板結構的全彩主動式有二ί顯T器克服了傳統有機發光二極體顯示器的缺點。不衣程簡單，並且具有高解析度、高發光效率和高產量及Page 13 514751 V. Description of the invention (10) 812 As a conductive and adhesive material. Figure gb shows a heater M2 pressure 821 on the surface of the transparent substrate mi of the upper plate, and the surface of the glass substrate 611 of the lower plate is illuminated with UV light 823, and = UV The photo-curable anisotropic conductive adhesive 825 serves as a conductive and adhesive material. FIG. 8c shows a heater 822 with heat and pressure 831 on the surface of the transparent substrate 311 of the upper plate, and an anisotropic conductive film 827 is used as a conductive and adhesive material. The resistance values of these conductive and adhesive materials used in Figure 8 are between 0.1 · 106 ohms per square. When using the hot pressing method, the daylight element of the lower board does not need to reserve a transparent light guide area. When using ultraviolet light, only a small part of the transparent area needs to be reserved for thermosetting. Accordingly, the light-emitting area of the light-emitting display of the present invention is close to 100%. Furthermore, since the light emitting layer and the TFT-array are fabricated on different substrates in the present invention, the light source can be transmitted through the TFT substrate, so γ increases the layout area of the polycrystalline silicon TFT circuit and solves the problem of light emitting effects. Ask evenly. The problem of non-uniform luminous effect can also be solved by using a circuit of amorphous stone T f τ with an n-channel source follower type (n channel source f0u00w type). Therefore, the resolution of the light emitting display is improved. Because the boards are made separately, their yield and yield are also improved. The two-chip base In summary, the present invention overcomes the disadvantages of the traditional organic light-emitting diode display by using a full-color active two-display device with a dual substrate structure. The clothing process is simple, and has high resolution, high luminous efficiency and high output.

第14頁 514751Page 14 514751

第15頁Page 15

514751 圖式簡單說明圖式之簡要說明圖1 a為一習知之薄膜電晶體有機電激發光元件的一平面概要示意圖。圖1 b為圖1 a之一剖面結構示意圖。514751 Brief description of the drawings Brief description of the drawings Figure 1a is a schematic plan view of a conventional thin-film transistor organic electro-optic light-emitting device. FIG. 1 b is a schematic cross-sectional structure diagram of FIG. 1 a.

圖2為根據本發明之雙基板主動式有機發光顯示器的一平面概要示意圖。圖3a〜圖3d依序說明製造本發明之上層基板的流程。圖4係根據圖3製作完成之上層有機發光顯示基板的一剖面結構示意圖。圖5係根據本發明之下層主動元件基板上單一晝素的示意圖。FIG. 2 is a schematic plan view of a dual substrate active organic light emitting display according to the present invention. 3a to 3d sequentially illustrate the process of manufacturing the upper substrate of the present invention. FIG. 4 is a schematic cross-sectional structure diagram of the upper organic light emitting display substrate manufactured according to FIG. 3. Fig. 5 is a schematic diagram of a single day element on a substrate of an underlying active device according to the present invention.

圖6 a係圖5的一剖面結構示意圖。圖6b係圖6a的簡示圖。圖7a為圖4和圖6b之雙基板黏合後的示意圖。FIG. 6 a is a schematic cross-sectional structure diagram of FIG. 5. Fig. 6b is a simplified diagram of Fig. 6a. FIG. 7a is a schematic view of the double substrates of FIGS. 4 and 6b after being bonded.

第16頁 514751 圖式簡單說明圖7b為雙基板紅綠、藍三種光色的三晝素整體示意圖圖8a說明本發明之雙板接合的一種方式，其中以熱空氣分別加在上板基板表面和下板基板表面，並以低熔點金屬凸塊作為導電並黏合的材質。圖8b說明本發明之雙板接合的另一種方式，其中施壓於上板基板表面上的加熱器，並以紫外光照射下板基板表面，而以ACA作為導電並黏合的材質。圖8c說明本發明之雙板接合的另一種方式，其中熱壓於上 =^板表面上的加熱器，並以ACF作為導電並黏合的圖號說明 1 00習知之薄膜電晶體有機電激發光元件 101、102薄膜電晶體 103電容儲存器 1 0 4光發射有機電激發光墊 1 0 5源匯流排 1 0 6閘匯流排 1 0 7接地匯流排 111 絕緣基板 11 4 聚合矽閘層 11 2第一閘絕緣層 11 6閘匯流排Page 16 514751 Brief description of the diagram. Figure 7b is the overall schematic diagram of the three light colors of the three substrates red, green, and blue. Figure 8a illustrates a method of joining the two plates of the present invention, in which hot air is separately added to the surface of the upper substrate. And the lower substrate surface, and a low melting point metal bump is used as a conductive and adhesive material. Fig. 8b illustrates another embodiment of the two-plate bonding method of the present invention, in which a heater is pressed on the surface of the upper substrate and the surface of the lower substrate is irradiated with ultraviolet light, and ACA is used as a conductive and adhesive material. FIG. 8c illustrates another way of bonding the two plates of the present invention, in which the heater on the surface of the upper plate is hot pressed, and ACF is used to conduct and adhere to the drawing. FIG. Element 101, 102 Thin film transistor 103 Capacitor storage 1 0 4 Light emitting organic electrical excitation light pad 1 0 5 Source bus 1 0 6 Gate bus 1 0 7 Ground bus 111 Insulating substrate 11 4 Polymeric silicon gate layer 11 2 First gate insulation layer 11 6 gate bus

第17頁 514751Page 17 514751

11 8多晶矽島丘 1 2 2頂層電極 11 3第二絕緣層 1 2 4隔離層 132有機電激發光層 134陰極電極層 1 3 6陽極電極層 211有機發光顯示基板221 231導電材質主動元件面板11 8 Polycrystalline silicon island mound 1 2 2 Top electrode 11 3 Second insulating layer 1 2 4 Isolation layer 132 Organic electroluminescent layer 134 Cathode electrode layer 1 3 6 Anode electrode layer 211 Organic light-emitting display substrate 221 231 Conductive material Active element panel

3 11透明基板 321 OEL 膜 3 4 1 絕緣層 315透明材質層 3 3 1陰極層 501 503 504 掃描匯流排線 502窨％l > .^ ζ貝枓匯流排主動驅動電路佈局部接觸區域 6 11 玻離基板 6 3 1聚合；5夕或非晶石夕層 6 3 1 b >及極區域 651閘層 6 71金屬層 6 9 1彩色濾光片 711導電並黏合的材質 6 2 1緩衝層 6 3 1 a源極區域 641 聚合 Α κ 0結晶矽島丘 6 6 1中間層 681隔離層 6101透明材質層3 11 Transparent substrate 321 OEL film 3 4 1 Insulating layer 315 Transparent material layer 3 3 1 Cathode layer 501 503 504 Scan bus line 502 窨% l >. ^ Ζ Shell bus active drive circuit layout part contact area 6 11 The glass separation substrate 6 3 1 polymerizes; 5 or amorphous stone layer 6 3 1 b > and pole region 651 gate layer 6 71 metal layer 6 9 1 color filter 711 conductive and adhesive material 6 2 1 buffer layer 6 3 1 a Source region 641 Aggregate A κ 0 Crystalline silicon island hill 6 6 1 Intermediate layer 681 Isolation layer 6101 Transparent material layer

第18頁 514751 圖式簡單說明 811熱空氣 8 2 1 施壓 823紫外光 827 異方性導電膜 8 1 2 低熔點的金屬凸塊 822加熱器 8 2 5 異方性導電膠 831熱壓Page 18 514751 Brief description of the diagram 811 Hot air 8 2 1 Pressure 823 UV light 827 Anisotropic conductive film 8 1 2 Low melting point metal bump 822 Heater 8 2 5 Anisotropic conductive adhesive 831 Hot pressing

第19頁Page 19

Claims

514751 六、申請專利範圍 1 · 一種雙；一有機，一主動；一導電；公告本丨板主動- 肩^機發光顯不斋’包含有：皆光顯示基板；元件基板；以及时質的結合層，介於該兩基板之間，並以一接如申請專利範圍第1項所述之雙基板主動式有機發光顯示器，其中，該有機發光顯示基板更包含： x # 一透明基板，備有頂部和底部表面；一層透明材質層，鍍於該透明基板的頂部表面上； I層已圖樣化的有機電激發光膜，鍍於該透明材質層該已圖樣化的有機電激發光膜;以及 =層’覆盍於該陰極層的上方，作為該發光顯示膜;旦素之間的絕緣體，並防止傷害該層有機電激發光 ^中在該陰極層上方並留有窗口 ’作為基板接觸的區域。 /、q主動兀件 3. 如申請專利範圍第丨項示器，其中，該主動元件m基板/動式有機發光顯動凡件基板係一薄膜電晶體面板。 4. 如。申請專利範圍第3項所述之雙基不态，其中，該薄土動式有機發光顯電曰曰體面板上的單-畫素包含有六、申請專利範圍【二f掃描匯流排線、至少-條資料匯流排绩* 毺政，路佈局部分，且該畫素内並包含一祕咖女機發光顯示基板作為黏合並導電的接觸區域。塊與有女申口月專利範圍第】項所示器，其中，嗜接人14 式有機發光顯甲省接合方式為紫夕卜線照射或是熱固。 6·如申請專利範圍第丨項所述之示器，其巾，該接合此兩板的導電材機發光顯 T、異方性導電膠、導電樹脂、銀膠貝；=導電塊。 4疋金屬凸如申請專利範圍第1項所述之雙基板主不器，其中，該接合此兩板的導電材x機發光顯平方〇·1〜1〇6歐姆。貝的阻值介於每 8. 如申請專利範圍第丨項所述之雙基板主身 :器，其t，該有機電激發光膜是電：屏、發光：發光層或是電子傳輪層。得輸層、有機範，項所述之雙基板主動式有機發光顯亥主動元件基具有多晶矽或是非晶矽 4膜電晶體面板的結構。 9. 514751514751 6. Scope of patent application1. One kind of dual; one organic, one active; one conductive; Bulletin 丨 Board active-Shoulder light emitting display is not fast 'includes: all light display substrate; element substrate; and the combination of time and quality Layer between the two substrates, and a two-substrate active organic light-emitting display as described in item 1 of the patent application scope, wherein the organic light-emitting display substrate further includes: x # a transparent substrate provided with Top and bottom surfaces; a transparent material layer, plated on the top surface of the transparent substrate; layer I, a patterned organic electroluminescent film, plated on the transparent material layer, the patterned organic electroluminescent film; and = Layer 'covered on top of the cathode layer as the light-emitting display film; an insulator between deniers and to prevent damage to the organic electro-excitation light of the layer ^ window above the cathode layer is left as a substrate contact region. /, Q active element 3. As shown in item 丨 of the patent application scope, wherein the active element m substrate / active organic light emitting display substrate is a thin film transistor panel. 4. Such as. The double-base state described in item 3 of the scope of patent application, wherein the single-pixel on the thin-earth organic light-emitting display panel includes six. The scope of the patent application [two f-scan busbar, Congestion of at least one piece of data * The government, road layout part, and the pixel contains a light-emitting display board of the female coffee machine as a conductive contact area. The display device of the block and the female application for the month of the patent], in which the indulgent 14-type organic light-emitting display is connected by purple ray line or thermosetting. 6. The indicator as described in item 丨 of the scope of the patent application, the towel, the conductive material of the two plates joining the light emitting display T, anisotropic conductive adhesive, conductive resin, silver shell; = conductive block. 4 疋 Metal convexity The dual-substrate master as described in item 1 of the scope of the patent application, wherein the conductive material x machine which joins the two plates has a light-emitting display square of 0.1 to 106 ohms. The resistance value of the shell is between every 8. The main body of the dual substrate as described in item 丨 of the patent application scope, where t, the organic electroluminescent film is electric: screen, light-emitting: light-emitting layer or electron wheel layer . The two-substrate active organic light-emitting display device described in this section has a structure of a polycrystalline silicon or an amorphous silicon 4-film transistor panel. 9. 514751

六'申請專利範圍 10· —種雙基板主動式發光顯示器的有機發光顯示基板的製程，該發光顯示器係以該有機發光顯示基板，稱為上板，和二主動凡件基板，稱為下板，所構成的復合結構，而該兩基板之間失以一導電材質結合層，並以 -接合方式來結合該兩基板，該有機發光製程包含下列步驟： (a) 提供一備有頂部和底部表面的透明基板； (b) 在該透明基板的頂部表面上鍍上一層透明材質層·Six 'application for patent scope 10 · — A process for manufacturing an organic light emitting display substrate of a dual-substrate active light-emitting display. The light-emitting display uses the organic light-emitting display substrate, called an upper plate, and two active substrates, called a lower plate. , The composite structure is formed, and a conductive material bonding layer is lost between the two substrates, and the two substrates are bonded in a -joint manner. The organic light emitting process includes the following steps: (a) providing a top and bottom Transparent substrate on the surface; (b) Plate a layer of transparent material on the top surface of the transparent substrate.

(c) 在該透明材質層的上方鍍上一層已圖樣化的有電激發光膜； (d) 在該有機電激發光膜鍍上一陰極層；以及 (e) ，陰極層的上方覆上一絕緣層，作為該發光顯示器晝素之間的絕緣體，並防止傷害該層有機電激發光膜；其中在該陰極層上方並留有窗口，作為與該主動元件基板接觸的區域。 11.如申請專利範圍第10項所述之有機發光顯示基板的製程，其中該有機電激發光膜係以小分子有機發光極體之影罩方式來製作。 12. 如申請專利範圍第1 〇項所述之有機發光顯示基·板的程，其中該有機電激發光膜係以高分子有機發光二體之嘴墨印刷方式來製作(c) plating a patterned electrically excited light film on the transparent material layer; (d) plating a cathode layer on the organic electrically excited light film; and (e) covering the cathode layer An insulating layer is used as an insulator between the light emitting display and the organic electro-excitation light film to prevent damage to the layer; wherein a window is left above the cathode layer as an area in contact with the substrate of the active element. 11. The manufacturing process of the organic light emitting display substrate according to item 10 of the scope of the patent application, wherein the organic electroluminescent film is made by a shadow mask method of a small molecule organic light emitting body. 12. The process of organic light-emitting display substrates and panels as described in item 10 of the scope of patent application, wherein the organic electro-luminescent film is made by a high-molecular organic light-emitting ink nozzle printing method.

第22頁 M4751Page 22: M4751

六、申請專利範圍 13· 1申請專利範圍第丨〇項所述之有機發光顯示基板的 A程其中在該步驟（e )之後更包含在該有機發光顯示基板之絕緣層的上方塗以該導電材質結合層的步驟’以晝素對晝素將該雙機板對位黏合起來。 14·如申請專利範圍第丨〇項所述之有機發光顯示基板的製程’其中在該主動元件基板上塗以該導電材質結合層’以晝素對畫素將該雙機板對位黏合起來。 .广 15·如申晴專利範圍第1 〇項所述之有機發光顯示基板的製程’其中接合該雙板的方式是以熱空氣分別加在上板的透明基板表面和下板的玻璃基板表面，並以低熔點的金屬凸塊作為該導電並黏合的材質。 16·如申請專利範圍第1 〇項所述之有機發光顯示基板的製程，其中接合該雙板的方式是加壓於放置在上板之透明基板表面上的一^加熱’並以紫外光照射下板的玻璃基板表面，而以異方性導電膠作為導電並黏合的材質。 17·如申請專利範圍第1 〇項所述之有機發光顯示基板的製程，其中接合該雙板的方式是熱壓於放置在上板之透明基板表面上的一加熱器，並以異方性導電膜作為6. The scope of application for patents 13.1 The process of organic light-emitting display substrates described in item 1 of the scope of application for patents, wherein after step (e), it further includes coating the conductive layer on the insulating layer of the organic light-emitting display substrate with the conductive material. The step of the material bonding layer 'adhesively bonds the two machine boards with the day-to-day-to-day. 14. The process of organic light-emitting display substrates described in item No. 丨 0 of the scope of application for patents, wherein the active device substrate is coated with the conductive material bonding layer, and the dual-machine boards are aligned and bonded together with pixels. Canton 15. The manufacturing process of organic light-emitting display substrates as described in item 10 of Shen Qing's patent scope, wherein the way of joining the two plates is to add hot air to the transparent substrate surface of the upper plate and the glass substrate surface of the lower plate, respectively. , And a metal bump with a low melting point is used as the conductive and adhesive material. 16. The manufacturing process of the organic light-emitting display substrate as described in Item 10 of the scope of the patent application, wherein the way to join the two plates is to pressurize the substrate and place it on the surface of the transparent substrate on the upper plate, and irradiate it with ultraviolet light. On the surface of the glass substrate of the lower plate, an anisotropic conductive adhesive is used as a conductive and adhesive material. 17. The manufacturing process of the organic light-emitting display substrate as described in Item 10 of the scope of the patent application, wherein the method of joining the two plates is hot pressing on a heater placed on the surface of the transparent substrate of the upper plate, and anisotropic Conductive film as

第23頁 514751 六、申請專利範圍導電並黏合的材質 ΙΙϋϋΙ 第24頁Page 23 514751 VI. Patent application scope Conductive and adhesive material ΙΙϋϋΙ Page 24