TW508713B

TW508713B - Two-dimensional critical dimension monitor pattern

Info

Publication number: TW508713B
Application number: TW90130577A
Authority: TW
Inventors: George Liu
Original assignee: United Microelectronics Corp
Priority date: 2001-12-11
Filing date: 2001-12-11
Publication date: 2002-11-01

Abstract

A two-dimensional critical dimension monitor pattern is provided. The present two-dimensional critical dimension monitor pattern is suitable for monitoring in-line device critical dimensions. The present two-dimensional critical dimension monitor pattern comprises a plurality of critical dimension bars arranged in parallel and a plurality of strip patterns. Each of the critical dimension bars is provided with a respective linewidth and a respective length. Each of the strip patterns is vertically overlapped on the critical dimension bars. The structural stability of the two-dimensional critical dimension monitor pattern is strengthened by the strip patterns. Thus, the two-dimensional critical dimension monitor pattern can be safely transferred onto a photoresist film.

Description

508713508713

五、發明說明（l) 5 -1 發明領域: 本發明係有關於一種使用於半導體元件製程的偵測圖案；特別是有關於一種使用於微影製程的線上關鍵尺寸谓測圖案（in-line CD monitor pattern)。、 5 - 2發明背景：隨著半導體製程進入次微米的世代（submicron generation)，元件的線寬尺寸已微縮至次微米大小，而使得製造半導體元件的製程愈來愈複雜及昂貴。另一方面，半導體製程期間’亦必須測量及偵測一些元件參數（ device parameters)，以確保微影製程係適當地進行及製成元件的正確性。此些元件參數的測量包括線寬大小（ linewidth)及孔洞大小（hole dimensi〇n)等關鍵尺寸、階梯高度（step height )及圖案單元間的鄰近效應（ proximity effect )等的量測。此些元件參數係透過偵測一轉移至一光阻上或一半導體晶圓上的一偵測圖案（ monitor pattern)而獲得〇如弟一圖所示’通常一偵測圖案（monitor pattern )2係與元件圖案區（device pattern region) 3同時形成於一光罩1上。此一偵測圖案2係與元件圖案同時形成於一半導體晶圓上。偵測圖案2係位於元件圖案區3的V. Description of the Invention (l) 5 -1 Field of the Invention: The present invention relates to a detection pattern used in a semiconductor device process; in particular, it relates to an in-line key size measurement pattern used in a lithography process. CD monitor pattern). 5-2 Background of the Invention: As the semiconductor process enters the submicron generation, the line width dimension of the device has shrunk to the submicron size, which makes the manufacturing process of the semiconductor device more and more complicated and expensive. On the other hand, during the semiconductor process, some device parameters must also be measured and detected to ensure that the lithography process is properly performed and the components are made correctly. The measurement of these component parameters includes the measurement of key dimensions such as linewidth and hole dimension, step height, and proximity effect between pattern elements. These component parameters are obtained by detecting a monitor pattern transferred to a photoresistor or a semiconductor wafer. As shown in the figure, 'usually a monitor pattern 2 The device pattern region (device pattern region) 3 is formed on a photomask 1 at the same time. This detection pattern 2 is formed on a semiconductor wafer simultaneously with the element pattern. The detection pattern 2 is located in the element pattern area 3.

508713 H/fu ^ M^9Q13Q577_年月曰修正_ 外部，但也可安排於元件圖案區3内部的適位處。多個偵測圖案2亦可同時安排於光罩1上的適當位置，以更精確地量測元件圖案的轉移效果。參照第二圖，係一種習知在光罩上的關鍵尺寸偵測圖案（CD monitor pattern) 2 0的平面示意圖，其供作線上（i η - 1 i n e)量測元件關鍵尺寸之用。此關鍵尺寸偵測圖案2 0包括一疏離線圖案區（isolated pattern region) 2 2及一密集線圖案區2 4 。區域1 0内之偵測圖案與區域1 0外之偵測圖案分別代表形成於半導體晶圓上不同的區域，例如，區域1 0内的偵測圖案代表形成於一半導體底材上方，而區域1 0外的偵測圖案代表形成於淺渠溝隔離區上方。在關鍵尺寸較大的半導體製程上，例如0. 1 8/z m以上，此種習知的關鍵尺寸偵測圖案2 0可用以偵測製程中的元件關鍵尺寸。但對於較先進的半導體微縮製程，例如0. 15/z m、0.13// m，甚至是0.1// m，會因為關鍵尺寸债測圖案2 0上的線狀關鍵尺寸圖案（CD bar) 2 2 2或2 4 2 太小，導致此關鍵尺寸偵測圖案2 0轉移至一光阻上時，容易造成線狀關鍵尺寸圖案2 2 2或2 4 2的傾倒或飄移，而無法量測，甚至造成元件製成品的缺陷，影響產品良率〇508713 H / fu ^ M ^ 9Q13Q577_year month correction_external, but it can also be arranged in place inside the element pattern area 3. Multiple detection patterns 2 can also be arranged at appropriate positions on the mask 1 at the same time, so as to more accurately measure the transfer effect of the element pattern. Referring to the second figure, it is a plan view of a conventional CD monitor pattern 2 0 on a photomask, which is used for measuring the key dimensions of an element (i η-1 i n e) on a line. The key size detection pattern 20 includes an isolated pattern region 2 2 and a dense line pattern region 2 4. The detection pattern in the area 10 and the detection pattern outside the area 10 respectively represent different areas formed on the semiconductor wafer. For example, the detection pattern in the area 10 represents formation over a semiconductor substrate, and the area The detection pattern outside 10 represents the formation above the shallow trench isolation area. In a semiconductor process with a larger critical size, for example, 0.1 8 / z m or more, this conventional critical size detection pattern 20 can be used to detect the critical size of a component in the process. But for more advanced semiconductor microfabrication processes, such as 0.15 / zm, 0.13 // m, or even 0.1 // m, the linear key size pattern (CD bar) on the key size debt measurement pattern 2 0 2 2 2 or 2 4 2 is too small, when this key size detection pattern 20 is transferred to a photoresist, it is easy to cause the line key size pattern 2 2 2 or 2 4 2 to fall or drift, and it is impossible to measure, or even Causes defects in component finished products and affects product yield.

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五、發明說明（3) 在光阻上：:ί尺寸偵測圖案2 0轉移至-光阻上時，在光阻上的部份轉移圖宰 ^ ^ 案2 4 2的線寬大小在〇案/面不-圖。當線狀關鍵尺寸圖由於豆底而共ρ丨， 5 "in以下，甚至是時， 2的傾倒，二傾倒；以f此線狀關鍵尺寸圖案2 4 2 (edged CD pattern):且關鍵尺寸圖案 2 4 案2 4 2上最為明顯。 ”奴長長度的線狀關鍵尺寸圖合微：：半良的關鍵尺寸偵測圖案，以符關鍵尺寸I::; 以供作微縮製程的線上元件 5 - 3發明目的及概述：本發明之主要目的係提供— _ 案，其具有強化的結構穩定性：：關鍵尺寸偵測圖圖案順利地成像於一光阻上。了使此二維關鍵尺寸偵測 ‘維關鍵尺寸偵測圖適合於0·15 /zm 至0.1 //m 本發明之另一目的係提供一種案’其具有強化的結構穩定性，線寬的半導體元件微縮製程。本發明之又一目的係提供一種維關鍵尺寸偵測圖案阻上，，其具有強化的結構穩定性，可順利地成V. Description of the invention (3) On the photoresist: When the size detection pattern 20 is transferred to the -photoresist, the partial transfer pattern on the photoresist is shown. ^ ^ The line width of case 2 4 2 is 0. Case / face not-illustration. When the linear key size diagram is due to the bottom of the bean, it is less than 5 " in, or even when it is dumped by two, the second is dumped; f is the linear key size pattern 2 4 2 (edged CD pattern): and the key The size pattern 2 4 is most obvious on the case 2 4 2. The linear key dimension drawing of the slave length is micro :: the key dimension detection pattern of Banliang, which corresponds to the key dimension I ::; for the online component of the miniature process 5-3 The purpose and summary of the invention: The main purpose is to provide a _ case, which has enhanced structural stability: the key size detection map pattern is successfully imaged on a photoresist. This makes this two-dimensional key size detection 'dimensional key size detection map suitable for 0 · 15 / zm to 0.1 // m Another object of the present invention is to provide a method for semiconductor device miniaturization process with enhanced structural stability and line width. Another object of the present invention is to provide a critical dimension detection In terms of pattern resistance, it has enhanced structural stability and can be successfully formed.

$ 7頁 508713 五、發明說明（4) 適合用於偵測半導體微縮製程步驟中的元件關鍵尺寸。根據以上所述之目的，本發明提供一種二維關鍵尺寸 ' 偵測圖案。此二維關鍵尺寸偵測圖案至少包括複數個互相 · 平行的線狀關鍵尺寸圖案（CD bar )及複數個條狀圖案（~ strip pattern)。每一線狀關鍵尺寸圖案具有一個別線寬 (1 inew id th)及一個別長度。每一條狀圖案係垂直重疊於此些線狀關鍵尺寸圖案上。當此二維關鍵尺寸偵測圖案轉移至一光阻上時，此些條狀圖案在光阻上提供支撐作用予 -. 每一線狀關鍵尺寸圖案，以強化轉移至光阻上的此一二維關鍵尺寸圖案的結構穩定性，以順利地進行線上元件關鍵鲁 5-4發明詳細說明：本發明提供一種改良的二維關鍵尺寸偵測圖案（⑶ monitor pattern )，其具有強化的結構穩定性，^ 測圖案順利，轉移至—光阻上。本發明之二維關二寸〜測圖案適合在0.15㈣、0.13_，甚至是〇1 :: 縮製程之線上用以偵測元件關鍵尺寸。此一 ^ 圖案係與其它元件圖案（device patterns )同^寸 -光罩上。本發明+，可形成一關鍵尺寸偵測门圖上的7L件圖案區外冑’亦可同時形成複數個關鍵尺‘ 圖案於光罩上適位4，以使元件關鍵尺寸之偵測'更為精確$ 7 pages 508713 V. Description of the invention (4) It is suitable for detecting the critical dimensions of components in the semiconductor miniaturization process steps. According to the above object, the present invention provides a two-dimensional critical dimension detection pattern. The two-dimensional key size detection pattern includes at least a plurality of mutually parallel linear key size patterns (CD bar) and a plurality of strip patterns (~ strip pattern). Each linear key size pattern has a different line width (1 inew id th) and a different length. Each stripe pattern is vertically superimposed on these linear key size patterns. When the two-dimensional key size detection pattern is transferred to a photoresist, these stripe patterns provide support to the photoresistor. Each linear key size pattern is used to strengthen the one or two transferred to the photoresist. Dimensional key dimension pattern structural stability to smoothly carry out online component key 5-4 Detailed description of the invention: The present invention provides an improved two-dimensional key dimension detection pattern (⑶ monitor pattern), which has enhanced structural stability , ^ The test pattern is smooth and transferred to-photoresist. The two-dimensional pattern of the present invention is suitable for detecting key dimensions of components on the line of 0.15㈣, 0.13_, or even 〇1 :: reduction process. This ^ pattern is the same as other device patterns (device patterns)-on the reticle. The invention + can form a 7L piece pattern area on a key size detection door map, and can also form a plurality of key scales at the same time. The pattern can be positioned on the mask 4 to make the detection of the key size of the component more accurate. For precision

。再者，一適位處此一關鍵尺寸偵測圖案可形成於元件圖案區内部 _ 本發明提供的一種错由較佳具體實施例做二維關鍵尺寸偵測圖案，將於下文 —詳細說明。密集線域3 0 寸偵測上方，導體底在淺渠體底材導體底的一維關鍵尺寸偵測圖案一較在此一較佳具體實施例中，區（i so 1 ated (dense 關鍵尺寸偵測圖別代表形成於一線圖案圖案區内咅P的圖案分例如區材上方溝隔離、一半苓照第四圖佳具體實施例之關鍵尺寸偵測圖 Pattern region Pattern region 案及區域3 〇外半導體晶圓表面鍵尺寸偵測圖案部的關鍵尺寸偵半導體晶圓表面最外層或具元件，係本發明平面示意圖案4 0包括一疏離 )4 2 及一 )4 4。區部的關鍵尺的不同區域形成在一半測圖案形成係指一半導構造之一半域3 0内部的關，而區域3 0外區域上方。此一導體底材上方一材上方一最外層疏離線圖案區4 2包括複數個互相平行的第一線狀關φ 鍵尺寸圖案（CD bar ) 4 2 2。每一個第一線狀關鍵尺寸圖案4 2 2具有一個別線寬（丨丨n e w i d t h )及一個別長度。複數個第一條狀圖案（s t r i p p a 11 ern ) 424係垂直重疊於此些第一線狀關鍵尺寸圖案4 2 2上。再者，較佳. Furthermore, a key position detection pattern in place can be formed inside the element pattern area. A two-dimensional key size detection pattern provided by the present invention is made by a preferred embodiment, which will be described in detail below. The one-dimensional key size detection pattern of the conductor bottom on the bottom of the conductor of the shallow channel body above the 30-inch dense line detection. Compared with this preferred embodiment, the area (i so 1 ated (dense key size) The detection pattern represents the pattern of 咅 P formed in the one-line pattern area. For example, the grooves above the area are isolated, and the half is in accordance with the key size detection pattern of the fourth embodiment. The key size detection pattern portion of the semiconductor wafer surface key size detection semiconductor wafer surface has an outermost layer or a component, which is a schematic plan view of the present invention. The pattern 40 includes an alienation) 4 2 and a) 4 4. The different areas of the key ruler of the area are formed in half. The pattern formation refers to one half of the semiconducting structure, the half inside the area 30, and the area outside the area 30 above the area. Above the conductor substrate, above the material, an outermost layer. The sparse line pattern area 4 2 includes a plurality of parallel first parallel key-diameter key size patterns (CD bar) 4 2 2. Each of the first linear key size patterns 4 2 2 has a different line width (丨 n e w i d t h) and a different length. The plurality of first stripe patterns (stroip p a 11 ern) 424 are vertically superimposed on the first linear key size patterns 4 2 2. Moreover, better

508713 五、發明說明（6) 地，一第一條狀圖案4 2 4係垂直重疊於具最長個別長度的一第一線狀關鍵尺寸圖案4 2 2的每一端上。密集線圖案區4 4包括複數個互相平行的第二線狀關鍵尺寸圖案4 4 2。每一個第二線狀關鍵尺寸圖案4 4 2 具有-個別線寬及-個別長度。纟此一較佳具體實施例中，此些第二線狀關鍵尺寸圖案4 4 2的排列方向係垂直於此些第一線狀關鍵尺寸圖案4 2 2的排列方向。.複數個第二條狀圖案4 4 4係垂直重疊於此些第二線狀關鍵尺寸圖案4 4 2上。較佳地，-第二條狀圖案4 4 4係垂直重疊於具最長個別長度的一第二線狀關鍵尺寸圖案4 4 2的每一端0 當關鍵尺寸偵每一第一條狀圖案第一線鍵尺寸尺寸圖 4如一 2之間用，以者，個鍵尺寸就愈容狀關鍵尺寸圖案4 2 2 案4 2 2的支撐板般垂 ’對此些第強化此些第別長度愈長圖案的線寬易傾倒。因測圖案 4 2 4 圖案4 提供支結構。直*** 二線狀二線狀的關鍵愈小時 it 匕，一 4 0轉係如一 2 2之撐作用同樣地此些第關鍵尺關鍵尺尺寸圖 ’由於第一條移/成像於一光阻支撐板般垂直*** 間，而對，強4匕此，每一第一線狀關寸圖案4 寸圖案4 案成像於底面積變狀圖案4 於此此些第一線狀些第一線狀贼 '一條狀圖案4 鍵尺寸圖案4 4 2提供支携 4 2的結構。光阻中時，當小，其在光阻 2 4及一第二508713 V. Description of the invention (6) Ground, a first stripe pattern 4 2 4 is vertically overlapped on each end of a first linear key size pattern 4 2 2 with the longest individual length. The dense line pattern area 4 4 includes a plurality of second linear key size patterns 4 4 2 parallel to each other. Each of the second linear key size patterns 4 4 2 has-an individual line width and-an individual length. In this preferred embodiment, the arrangement direction of the second linear key size patterns 4 4 2 is perpendicular to the arrangement direction of the first linear key size patterns 4 2 2. A plurality of second stripe patterns 4 4 4 are vertically superimposed on these second linear key size patterns 4 4 2. Preferably, the second stripe pattern 4 4 4 vertically overlaps each end of a second linear key size pattern 4 4 2 with the longest individual length. Line key size and size Figure 4 is used between one and two, so that the size of each key becomes more critical. The key size pattern 4 2 2 Case 4 2 2 is like a support plate. The line width of the pattern is easy to fall over. The pattern 4 2 4 provides a supporting structure. Straightly insert the two-line two-line key. The smaller it is, the smaller the 40-rotation system is, such as the one-two-two support function. The same is true for these first key scales. Insert it vertically like a board, and right, strong, and each of the first linear pattern of 4 inches pattern 4 is imaged on the bottom area deformed pattern 4 Here are the first linear shapes of the first linear thief 'Striped pattern 4 key size pattern 4 4 2 provides a structure supporting 4 2. When in the photoresist, when it is small, it is in the photoresist 2 4 and a second

第10頁 ⑽713 、發明說明（7) 狀圖案4 4 4係分別垂直重疊於一個別長度最長的一第一 ^狀關鍵尺寸圖案4 2 2的每一端及一個別長度最長的一第二線狀關鍵尺寸圖案4 4 2的每一端，以強化它們的結構。、。本叙明提供的二維關鍵尺寸偵測圖案可以有許多的例如疏離線圖案區4 2的第一線狀關鍵尺;^圖案 2 2的排列方向可平行於密集線圖案區4 4的 :^案4 4 2的排列方向。複數個第-條狀圖宰4Page 10⑽713, Description of the Invention (7) The pattern 4 4 4 is vertically overlapped with a longest key size pattern of each first length 4 2 2 and a second linear shape with the longest length. Key size patterns 4 4 2 at each end to strengthen their structure. . The two-dimensional key size detection pattern provided by this description can have many, for example, the first linear key ruler of the sparse line pattern area 4 2; the arrangement direction of the pattern 22 can be parallel to the dense line pattern area 44: ^ Case 4 4 2's alignment direction. Plural bar chart

地垂直重疊於此些第-線狀^ 4 ί ί I:地垂直重疊於此些第二線狀關鍵尺寸圖ί 2明之關鍵尺寸偵測圖案4 0亦可僅包：；要：定或僅包含密集線圖案區“，端係視製；關鍵上藉=巧多個條狀圖案於複數個線定性，使此狀案的^ 疋在更被縮的半導辦制〒特Ground vertically overlaps with these -line ^^ ί I: Ground vertically overlaps with these second linear key-size diagrams 2 The key-size detection pattern 4 of Ming can also only include :; To: set or only Contains dense line pattern area ", depending on the system; the key is to use multiple strip patterns to characterize a plurality of lines, so that this case is more condensed in the semi-conductor system.

於在岣l· b、丨衣私中，例如0 · 1 5 # m以下，進而辛於在線上置測元件關鍵尺寸。進而禾以上所述僅為本發明定本發明之申請專利範圍之較佳實施例而已， ;凡其它未脫離本發並非用以限明所揭示之In 岣 l · b, 丨 clothing, for example, 0 · 1 5 # m or less, it is difficult to measure the key dimensions of components online. Furthermore, the above is only the preferred embodiment of the present invention which determines the scope of the patent application of the present invention; all other things that do not depart from the present invention are not used to limit the disclosed

第11頁 508713 五、發明說明（8) 精神下所完成之等效改變或修飾，均應包含在下述之專利申請範圍内。 lii· 第12頁 508713 圖式簡單說明第一圖係一習知包含元件圖案區與 — 偵測圖案的示意圖第 — 圖係一習知的關鍵尺寸偵測圖案平面示意圖第二圖係部份光阻剖面示意圖 5 其顯示部份第 — 寸偵測圖案的成像剖面示意圖及第四圖係本發明一較佳具體實施例的平面示意圖主要部份之代表符號： 1 光罩 2 偵測圖案 3 元件圖案區 1 0 區域 2 0 關鍵尺寸偵測圖案 2 2 疏離線圖案區 2 4 密集線圖案區 2 2 2 2 2 4 線狀關鍵尺寸圖案 3 0 域 4 0 關鍵尺寸偵測圖案 4 2 疏離線圖案區 4 4 密集線圖案區 4 2 2 第一線狀關鍵尺寸圖案〇Page 11 508713 V. Description of the invention (8) Equivalent changes or modifications made under the spirit should be included in the scope of patent applications described below. li · Page 12, 508713 The diagram is briefly explained. The first picture is a conventional schematic diagram including a component pattern area and — a detection pattern. The second diagram is a conventional schematic diagram of a key size detection pattern. The second picture is a partial light. Schematic diagram of the resistive section 5 The schematic diagram of the imaging section of the first-inch detection pattern and the fourth diagram are the representative symbols of the main parts of the plan schematic diagram of a preferred embodiment of the present invention: 1 mask 2 detection pattern 3 components Pattern area 1 0 Area 2 0 Key size detection pattern 2 2 Sparse line pattern area 2 4 Dense line pattern area 2 2 2 2 2 4 Linear key size pattern 3 0 Domain 4 0 Key size detection pattern 4 2 Sparse line pattern Zone 4 4 dense line pattern area 4 2 2 The first linear key size plan

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Claims

508713 六、申請專利範圍 1 · 一種二維關鍵尺寸偵測圖案，其包括·· 衩數個互相平行的線狀關鍵尺寸圖案’每一該線狀關鍵尺寸圖案具有一個別線寬及一個別長度；及複數個條狀圖案，該等條狀圖案係垂直重叠於該等線狀關鍵尺寸圖案上。、 2 ·如申請專利範圍第1項所述之二維關鍵尺寸偵測圖案，其中上述之一條狀圖案係垂直重疊於該個別長度最長、一該線狀關鍵尺寸圖案的每一端。、 3 ·如申請專利範圍第丨項所述之二維關鍵尺 . rb 」1貝〉則圖木’/、〒上述之複數個條狀圖案係等間隔地垂直重# β 等線狀關鍵尺寸圖案上。資於該 4 ·如申睛專利範圍第1項所述之二維關鍵尺寸偵測圖案其中上述之複數個條狀圖案係非等間隔丨也垂直重最線狀關鍵尺寸圖案上。且於该等 5· —種二維關鍵尺寸偵測圖案，其包括： & 離線圖案區（isolated pattern region) 該疏離，圖案區包括複數個互相平行的第一線狀關鍵尺寸^ ς 及複數個第一條狀圖案，每一該第一線狀關鍵尺寸圖^ I 有一個別線寬及一個別長度，及該等第一條狀圖案係^，重fc於该等第一線狀關鍵尺寸圖案上；及 ^508713 VI. Scope of patent application1. A two-dimensional key size detection pattern, including: · several parallel line key size patterns' each of the line key size patterns has a different line width and a different length ; And a plurality of stripe patterns, which are vertically overlapped on the linear key size patterns. 2. The two-dimensional key size detection pattern as described in item 1 of the scope of patent application, wherein one of the above stripe patterns is vertically overlapped at each end of the individual longest, one linear key size pattern. , 3 · The two-dimensional key ruler as described in item 丨 of the scope of patent application. Rb "1 bei> Ze Tumu" /, 〒 The above-mentioned plurality of stripe patterns are vertically spaced at equal intervals # β and other linear key dimensions On the pattern. As a result of the above-mentioned two-dimensional key size detection pattern as described in item 1 of Shenyan's patent scope, the above-mentioned plurality of stripe patterns are non-equidistant, and are also vertically heavy on the linear key size pattern. And in these five kinds of two-dimensional key size detection patterns, including: & offline pattern region (isolated pattern region) The alienation, the pattern region includes a plurality of first linear key dimensions parallel to each other and a plurality of Each of the first linear pattern, each of the first linear key dimensions ^ I has a different line width and a different length, and the first linear patterns are ^, weight fc on the first linear key dimensions On the pattern; and ^

第15頁 508713 六、申請專利範圍一密集線圖案區（dense pattern region)，該密集線圖案區包括複數個互相平行的第二線狀關鍵尺寸圖案及複數個第二條狀圖案，每一該第二線狀關鍵尺寸圖案具有一個別線兔*及一個別長度，及該等弟二條狀圖案係垂直重疊於該等第二線狀關鍵尺寸圖案上。 6 ·如申請專利範圍第5項所述之二維關鍵尺寸偵測圖案，其中上述之一第一條狀圖案係垂直重疊於該個別長度最長的一該第一線狀關鍵尺寸圖案的每一端。 7 ·如申請專利範圍第5項所述之二維關鍵尺寸偵測圖案，其中上述之一第二條狀圖案係垂直重疊於該個別長度最長的一該第二線狀關鍵尺寸圖案的每一端。 8 ·如申請專利範圍第5項所述之二維關鍵尺寸偵測圖案，其中上述之一第一條狀圖案係垂直重疊於該個別長度最長的一該第一線狀關鍵尺寸圖案的每一端，及一第二條狀圖案係垂直重疊於該個別長度最長的一該第二線狀關鍵尺寸圖案的每一端。 9 ·如申請專利範圍第5項所述之二維關鍵尺寸偵測圖案，其中上述之複數個互相平行的弟' 線狀關鍵尺寸圖案之排列方向係垂直於該等互相乎行的弟一線狀關鍵尺寸圖宰的排列方向。Page 15 508713 6. The scope of the patent application is a dense pattern region. The dense pattern region includes a plurality of parallel second linear key size patterns and a plurality of second stripe patterns. The second linear key size pattern has a special line rabbit * and a different length, and the two stripe patterns are vertically overlapped on the second linear key size patterns. 6. The two-dimensional key size detection pattern as described in item 5 of the scope of the patent application, wherein one of the first stripe patterns is vertically overlapped on each end of the first linear key size pattern with the longest individual length. . 7 · The two-dimensional key size detection pattern as described in item 5 of the scope of patent application, wherein one of the second stripe patterns described above is vertically overlapped at each end of the second linear key size pattern with the longest individual length . 8 · The two-dimensional key size detection pattern as described in item 5 of the scope of patent application, wherein one of the first stripe patterns is vertically overlapped on each end of the first linear key size pattern with the longest individual length And a second stripe pattern is vertically overlapped on each end of a second linear key size pattern with the longest individual length. 9 · The two-dimensional key size detection pattern as described in item 5 of the scope of the patent application, wherein the arrangement direction of the above-mentioned plurality of mutually parallel line-shaped key size patterns is perpendicular to the line-shaped line-shaped ones. The arrangement direction of the key size chart.

第16頁 508713 ψ 六、申請專利範圍 --- I 〇 ·如申請專利範圍第5項所述之二維關鍵尺寸價測圖案，其中上述之複數個第一線狀關鍵尺寸圖案之排列方向係平·· 行於該等第二線狀關鍵尺寸圖案的排列方向。 / II ·如申請專利範圍第5項所述之二維關鍵尺寸俛測圖案，其中上述之複數個第一條狀圖案係等間隔地垂直重疊於該— 等第一線狀關鍵尺寸圖案上。且、μ 1 2·如申請專利範圍第5項所述之二維關鍵尺寸伯測其中上述之複數個第—條狀圖案係非等間隔地於❿ 該等第一線狀關鍵尺寸圖案上。 13.如申請專利範圍第5項所述之二維關鍵尺寸债測圖其中上述之複數個第二條狀圖案係等間隔地垂直於等第二線狀關鍵尺寸圖案上。瓦爪申:專、耗(圍第5項所述之二維關鍵尺寸偵測圖其中上述之稷數個第二條狀圖案係非等間隔地垂直重該等第二線狀關鍵尺寸圖案上。Page 16 508713 ψ 6. The scope of patent application --- I 〇 The two-dimensional key size price measurement pattern described in item 5 of the scope of patent application, wherein the arrangement direction of the plurality of first linear key size patterns is ···································. / II · The two-dimensional key size speculative pattern as described in item 5 of the scope of patent application, wherein the plurality of first stripe patterns are vertically overlapped at equal intervals on the first line-shaped key size pattern. And, μ 1 2 · The two-dimensional key dimension primary measurement as described in item 5 of the scope of the patent application, wherein the plurality of first-stripe patterns are non-equally spaced on the first linear key dimension patterns. 13. The two-dimensional key size debt survey map as described in item 5 of the scope of patent application, wherein the plurality of second stripe patterns are perpendicular to the second linear key size pattern at equal intervals. Watson: Special, Consumption (the two-dimensional key size detection map described in item 5), where the above-mentioned two second stripe patterns are vertically and non-equally spaced on the second linear key size patterns .