TW497276B - High efficiency light emitters with reduced polarization-induced charges - Google Patents

Abstract

Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or re-versed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers, grading one or more layers to generate space charges and quasi-fields that oppose polarization-induced charges, incorporating; various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.

Description

497276 A7 B7 五、發明説明（1 ) 相關申請 本案主張臨時專利申請號碼No. 60/168,495，申請曰期 12,2，1999 之利益。 發明背景 發明範疇 本發明關係生長在電極表面的光發射混合半導體結晶， 較詳細，係關於減少或消除其自然產生之極化感應電荷以 改善發射效能。 相關技藝說明 大部份的半導體光發射器具有一雙異質結構，即包含一 有效或生長在兩包覆層之間的發光層。雙異質結構的各層 係由一種以上的材料製成。一包覆層為η型，意即含有超 量的電子，及一包覆層為Ρ型，意即含有超量的小孔。總 之，包覆層比有效層具有較大的帶隙。如此造成射出電子 及小孔限於有效層内，促成自由載體經有效層空間局部化 而有效地重組合以產生光。另外，雷射偶極體（LD)發射器 也具有分離的限制光層，標準包含一種含有更寬帶隙的材 料，圍繞一雙異質結構。雙異質結構半導體裝置在許多刊 物發表，包含O’Shea及同僚所著”雷射介紹及其應用11， Addison Wesley 出版公司，1978年 12 月，166- 167 頁。 在這種結構中，極化感應電荷發生在材料成分在基本結 晶結構的極化方向變化時。極化方向的定義是任何不與結 晶的極化向量，P，正的交結晶方向。本定義對於結晶鍵 具有自然方向性及甚至於稍微離子化的材料特別真實，例 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 玎497276 A7 B7 V. Description of the invention (1) Related applications This application claims the benefit of provisional patent application number No. 60 / 168,495, with an application date of 12,2,1999. BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a light-emitting hybrid semiconductor crystal grown on an electrode surface in more detail. It relates to reducing or eliminating polarization induced charges that naturally occur to improve emission performance. Description of related techniques Most semiconductor light emitters have a double heterostructure, that is, a light emitting layer that is effective or grows between two cladding layers. Each layer of the double heterostructure is made of more than one material. A cladding layer is n-type, meaning that it contains excessive electrons, and a cladding layer is P-type, meaning that it contains excessive pinholes. In short, the cladding layer has a larger band gap than the effective layer. This results in that the emitted electrons and pinholes are confined to the effective layer, and the free carrier is effectively localized and effectively recombined by the effective layer space to generate light. In addition, the laser dipole (LD) transmitter also has a separate light-limiting layer. The standard includes a material with a wider band gap that surrounds a double heterostructure. Double heterostructure semiconductor devices have been published in many publications, including "Introduction to Lasers and Their Applications" by O'Shea and colleagues11, Addison Wesley Publishing Company, December 1978, pages 166-167. In this structure, polarization Induced charge occurs when the polarization direction of the basic crystalline structure of the material composition changes. The definition of the polarization direction is any polarization vector that is not related to the crystal, P, positive cross-crystallization direction. This definition has natural directivity for crystalline bonds and Even the slightly ionized material is very real. Example -4- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm).

497276 A7 B7 五、發明説明（2 ) 如，III-V或II-VI半導體。這種充電在結晶格失配材料的情 況下可能與應變有關（壓電性），由於不同材料的結晶鍵的 離子強度的差異而與成分有關（自發性），或兩者結合。感 應電荷產生電場或電勢梯度即對自由載體及外部電場有相 同的影響。這種現象在一些刊物中討論過，包含Bernardini 及同僚，π I I I - V氮化物的自發性極化及壓電常 數”，美國物理學會期刊，物理評論Β，卷56，No. 16， 1997，頁 R10 024-027，及 Takeuchi及同僚，，’因應變 GalnN 量子井的壓電場引起的有限量子Stark效應”，日本應用物 理期刊，卷36，部2，No· 4，1997，頁L3 82-L3 85。該電場 強度經估計，一結晶極化表面生長的氮化物雙異質結構， 高達2.5 X 106 V/cm，Bykhovski及同僚，π彈性應變回縮及 GaN-AIN，Gan-AlGaN及GaN-InGaN超級晶格的壓電效 應’’，日本應用物理期刊，卷81，No. 9，1997，頁6332-6338 ° 如果考慮結晶極化表面生長的異質結構電特性時必須要 考慮極化感應電荷，如果是纖鋅礦GaN結晶，結晶層沿 0001方位生長，或為閃鋅礦GaAs結晶，則沿111方位生 長，此為結晶極化表面的兩個例子。纖鋅礦結構的Bravais 晶格為六角形，垂直六角形的軸通常標示為C軸或0001方 位。沿此軸結構可設想為一系列的同元素原子層（例如，全 部為鎵Ga或全部為氮N)構成正六角形。由於這種一致性， 各層（或表面）極化及具有一正或一負電荷，產生橫跨原子 層的一雙極。各層的電荷狀態依據其組成原子而定。各種 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 497276 A7 B7 五、發明説明（3 ) 生長方向結晶平面的其他例子可參考Streetman，”固態電 子裝置，，，第二版，Prentice-Hall公司，1980，頁 1-24，及 Shuji Nakamura及同僚，’'藍雷射偶極體，GaN基礎的光發 射器及雷射 n，Springer，1997，頁 21-24。 直到最近，光發射異質結構的主動及包覆區相關的内部 極化場已不再以重要問題提出。這是因為較多的光發射偶 極體（LEDs)係根據非極化結晶表面生長的Al- Ga- In- As- P材 料系統建立（特別是001閃鋅礦表面）。最近，不過，己經 有相當量光射器根據Al-Ga-In-N(氮化物）材料系統製作， 大部份沿纖鋅礦結晶的0001方位生長，這是一高極化表 面。然而，氮化物雙異質結構係根據傳統非極化設計。 圖1A為一斷面示意圖顯示一標準氮化物雙異質結構在極 化方向生長的半導體。基層1可以是任何適合氮化物半導 體生長的材料，包含尖晶石（MgAl204)，藍寶石（Al2〇3)， SiC (包含 6H，4H，及 3C)，ZnS，ZnO，GaAs，A1N 及 GaN。基層厚度一般為100微米至1 mm。基層1上面的緩衝 層2可以用AIN，GaN，AlGaN，InGaN或其他製成。緩衝層 有助於減少基層1及其上的傳導接觸層3之間可能的晶格失 配。不過，如果基層1的晶格常數大約等於氮化物半導體 的常數，則緩衝層2可以省略。緩衝層2也可以用某些氮化 物生長技術省略。根據材料成份，緩衝層2的能帶隙範圍 從2.1 eV至6.2 eV，其厚度約為0.5微米至1.0微米。 η型接觸層3 —般也由氮化物半導體製成，較理想GaN或 InGaN，厚度從0.5微米至5.0微米，及帶隙GaN約為3.4 eV而 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 玎497276 A7 B7 5. Description of the invention (2) For example, III-V or II-VI semiconductors. In the case of crystalline lattice mismatched materials, this charging may be related to strain (piezoelectricity), due to the difference in ionic strength of the crystalline bonds of different materials, and to the composition (spontaneous), or a combination of the two. The induced electric field or potential gradient of the induced charge has the same effect on the free carrier and the external electric field. This phenomenon has been discussed in some journals, including Bernardini and colleagues, spontaneous polarization and piezoelectric constant of π III-V nitrides ", Journal of the American Physical Society, Physical Review B, Volume 56, No. 16, 1997, Page R10 024-027, and Takeuchi and colleagues, "Finite Quantum Stark Effect Due to the Piezoelectric Field of a Strained GalnN Quantum Well", Japanese Journal of Applied Physics, Vol. 36, Part 2, No. 4, 1997, Page L3 82 -L3 85. The electric field strength is estimated to be up to 2.5 X 106 V / cm, a double heterostructure of nitride grown on a crystalline polarized surface, Bykhovski and colleagues, π elastic strain retraction and GaN-AIN, Gan-AlGaN and GaN-InGaN supercrystals Grid's Piezoelectric Effect '', Japanese Journal of Applied Physics, Vol. 81, No. 9, 1997, pages 6332-6338 ° If you consider the electrical characteristics of heterostructures grown on crystalline polarized surfaces, you must consider polarization-induced charges. Wurtzite GaN crystals, with a crystalline layer growing along the 0001 orientation, or sphalerite GaAs crystals, growing along the 111 orientation. These are two examples of crystal-polarized surfaces. The Bravais lattice of the wurtzite structure is hexagonal, and the vertical hexagonal axis is usually marked as the C axis or 0001 orientation. The structure along this axis can be conceived as a series of atomic layers of the same element (for example, all gallium Ga or all nitrogen N) forming a regular hexagon. Because of this consistency, the layers (or surfaces) are polarized and have a positive or a negative charge, creating a bipolar layer that spans the atomic layer. The charge state of each layer depends on its constituent atoms. Various -5- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 497276 A7 B7 V. Description of the invention (3) For other examples of crystalline planes in the growth direction, please refer to Streetman, "Solid State Electronic Devices, , Second Edition, Prentice-Hall, 1980, pages 1-24, and Shuji Nakamura and colleagues, `` Blue Laser Dipole, GaN-Based Light Emitter and Laser, Springer, 1997, page 21- 24. Until recently, the active and cladding-related internal polarization fields associated with light-emitting heterostructures were no longer raised as important issues. This is because more light-emitting dipoles (LEDs) are based on non-polarized crystalline surfaces. A growing Al-Ga-In-As-P material system was established (especially the 001 sphalerite surface). Recently, however, a considerable amount of light emitters have been based on the Al-Ga-In-N (nitride) material system Mostly, it grows along the 0001 direction of wurtzite crystal, which is a highly polarized surface. However, the nitride double heterostructure is based on the traditional non-polar design. Figure 1A is a schematic cross-sectional view showing a standard nitride Semiconductors with double heterostructures growing in the direction of polarization The base layer 1 may be any material suitable for nitride semiconductor growth, including spinel (MgAl204), sapphire (Al203), SiC (including 6H, 4H, and 3C), ZnS, ZnO, GaAs, A1N, and GaN. The thickness of the base layer is generally 100 micrometers to 1 mm. The buffer layer 2 on the base layer 1 can be made of AIN, GaN, AlGaN, InGaN or other. The buffer layer helps reduce the possibility However, if the lattice constant of the base layer 1 is approximately equal to the constant of the nitride semiconductor, the buffer layer 2 can be omitted. The buffer layer 2 can also be omitted using some nitride growth techniques. Depending on the material composition, the buffer layer The band gap of 2 ranges from 2.1 eV to 6.2 eV, and its thickness is about 0.5 micrometers to 1.0 micrometers. The η-type contact layer 3 is also generally made of a nitride semiconductor, preferably GaN or InGaN, with a thickness of 0.5 micrometers to 5.0 Micron, and band gap GaN is about 3.4 eV and -6-This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm)

線 497276 A7 B7 五、發明説明（4 )Line 497276 A7 B7 V. Description of the invention (4)

InGaN較少（根據銦含量而定）。較低η型或非摻染包覆層4在 導電層3—舷包含GaN或AlGaN，GaN的帶隙為3.4 eV而AlGaN 較大（根據銘含量而定）。其厚度範圍可從1 nm至100 nm。 氮化物雙異質結構使用InGaN作為活性區5在低包覆層之 上，其厚度為1 nm至100 nm。本層的帶隙一般為2.0 eV， 但根據銦含量而變化。一頂部p型或非摻染層6在活性區之 上一般包含AlGaN或GaN，厚度及帶隙能源與低η型包覆層 4相似。一ρ型GaN導電接觸層7在包覆層6之上具有能帶隙 約為3.4 eV及厚度為10 nm至5 0 0 nm。總之，該結構係向極 化方向生長，如0001，由於不同的構成物質在各層介面之 間便產生極化感應電荷板。特別與光發射器操作有關為靠 近活性區5的極化感應電荷板。 如圖1A所示的複合半導體，一負極化感應電荷板密度σ 1 其強度例如1〇13電子/cm2，一般在活性區5與較低包覆區4 之間介面產生。一相同強度的正電荷板板密度σ 2在活性區 5與上包覆層6之間的介面產生。這些充電的極性依結晶層 的黏結而定，即如上述為方向性及稍為離子化。總之，一 電荷板的密度係根據兩層之間成分差異引起的自發性因素 及兩層之間晶格失配引起的壓電應變而定。例如，σ 1在 一 In〇.2Ga〇.8N活性區5及8.3χ1012電子/cm12 GaN包覆層4之 間。這是因為In〇.2Ga〇.8N活性區5(自發性極化）中銦含量為 20%，及因與下面GaN層的晶格失配引的應變（壓電極化）。 介面電荷板沿活性區的相對表面產生一跨區的偶極。本 偶極相當於一電場其強度根據板電荷σΐ及σ2的強度而 本纸張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 五、發明説明（5 定。1於上述情況，-板充電83xl〇12cm.2提供一電場 1.5x10 V/Cm。根據其原始條件， ’、 ^ m ± ,. 將此电場看作極化感應 因=產生的靜電電勢強度降落係根據偶極層的厚度 而定。偶極層厚度係指生長方向的物理長度，即…及… 之間的距離。此距離可以用來決定靜電電勢強度下降，同 樣的情況用來決定兩雷交姑少、 …个穴心阿私谷扳足間距離產生的電容電勢下 降。上述電荷密度σΐ及σ2之間距離為1〇咖會造成活性區 !.5V的極化感應電勢降。跨活性區的淨電場也根據一政參 數而定包含包覆層周圍的摻染濃度，跨p_n連結面的電壓 及自由載體阻擔’所以一般不等於極化感應場。不過，由 於其強度，極化感應場仍為決定淨電場的一重要因素。 氮化物發射器在結晶表面〇〇〇1 (極）生長具有一低發射效 率約為1%至10%。這可能是因為活性區内或附近有重大的 極化感應場存在致使效率受到限制。圖1B顯示相當圖i八結 構裝置的能帶。當該裝置操作時，由σ1&σ2自然產生的 極化電場會在多方面減少效率。首先，偶極導致區内電子 及孔的一分離2間（反方向移動）。如顯示，電子價帶Εν的 孔吸引活性區5—端的負電荷板σ i，而導電帶的電子^吸 引另一端的正電荷板C72。這種自由載體的分離空間降低再 結合放射的或然率，減低放射效率。第二，導電及電子價 帶量子井的能阻擋因電場量化效應而減低。如此，低於Εν 及高於Ec的載體經由虛線所示的路徑從井逃逸。第三，極 化感應場的存在也導致載體超射，由載體軌道B顯示，從 活性區的σ 1端較高的電位Ec至σ 2端的較低電位EC，及 _________ - 8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 497276 A7 B7 五、發明説明（6 ) 從活性區的σ 2端較低低的電位以至σ 1端較高的電位Εν。 應用工程師所關心的另外問題為應用偏差增加時發射波 長的穩定性。如果存在強力的極化感應場，發射波長會隨 裝置偏移的增加而藍向移動。因為裝置偏移的增，較多的 自由載體積集在導電及電子價帶井中。因為自由載體為空 間分離，會自成一偶極相對或包含極化感應場。因為淨電 場減少，量子井的量化狀態變化，造成發射波長藍向移 動。 圖1C顯示一光發射器在一無極化感應電荷的非極化表面 操作的活性層5及包覆層4及6的能帶。其他均相等，其放 射效率較高，因為上面討論的三種效應不是消失就是大幅 減少。 數種增加GaN基礎LED的效率的方法已經使用。美國專 利5,959,307及5,578,839，兩者專利人為Nakamura及同僚， 討論包覆層添加鋁以增加活性區阻擋高度以達到更有效率 地限制自由載體。不過，這種添加也變化包覆層材料的成 分，從GaN變為AlGaN，其作用在於增加自發性及壓電極 化場。AlmGao.^N包覆層内含有b% A1會在發射層產生 雙倍極化場達3x106 v/cm。該種電場會減少載體限制及因 光發射器能帶變化而增加空間分離，因而降低發射放率。 發明概述 本發明尋找改善複合半導體LED，含沿極化方向生長的 各層，的操作效率的方法藉由：減少或消除結晶自然產生 的極化感應電荷以改善載體限制，減少其空間分離，及減InGaN is less (depending on the indium content). The lower η-type or non-doped coating layer 4 contains GaN or AlGaN on the conductive layer 3-the band gap of GaN is 3.4 eV and the AlGaN is larger (depending on the content). Its thickness can range from 1 nm to 100 nm. The nitride double heterostructure uses InGaN as the active region 5 above the low cladding layer and has a thickness of 1 nm to 100 nm. The band gap of this layer is generally 2.0 eV, but it varies depending on the indium content. A top p-type or non-doped layer 6 generally includes AlGaN or GaN above the active region, and its thickness and band gap energy are similar to those of the low n-type cladding layer 4. A p-type GaN conductive contact layer 7 has an energy band gap above the cladding layer 6 of about 3.4 eV and a thickness of 10 nm to 500 nm. In short, the structure grows in the direction of polarization, such as 0001. Due to different constituent substances, polarization-induced charge plates are generated between the interfaces of the layers. Of particular relevance to the operation of the light emitter is a polarization-induced charge plate close to the active region 5. As shown in FIG. 1A, the density of a negatively-polarized induced charge plate σ 1 is, for example, 1013 electrons / cm 2, and is generally generated at the interface between the active region 5 and the lower cladding region 4. A plate density σ 2 of a positively charged plate of the same strength is generated at the interface between the active region 5 and the upper cladding layer 6. The polarity of these charges depends on the adhesion of the crystalline layer, that is, directional and slightly ionized as described above. In summary, the density of a charge plate depends on the spontaneous factors caused by the difference in composition between the two layers and the piezoelectric strain caused by the lattice mismatch between the two layers. For example, σ1 is between an In0.2 Ga0. 8N active region 5 and an 8.3 x 1012 electrons / cm12 GaN cladding layer 4. This is because the indium content in the In0.2Ga.8N active region 5 (spontaneous polarization) is 20% and the strain (piezoelectric polarization) is induced due to the lattice mismatch with the underlying GaN layer. The interface charge plate creates a cross-region dipole along the opposite surface of the active region. This dipole is equivalent to an electric field whose strength is based on the strength of the plate charges σΐ and σ2, and the paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm). 5. Description of the invention (5). In the above situation, -The board charges 83xl012cm.2 provides an electric field of 1.5x10 V / Cm. According to its original conditions, ', ^ m ±,. This electric field is regarded as the polarization induction factor = the generated electrostatic potential intensity drop is based on the dipole The thickness of the layer is determined. The thickness of the dipole layer refers to the physical length in the growth direction, that is, the distance between ... and .... This distance can be used to determine the decrease in the electrostatic potential. … The capacitance potential generated by the distance between Axu Valley and Axu Valley decreases. The distance between the above charge density σΐ and σ2 is 10 °, which will cause the polarization-induced potential of the active region to decrease by .5V. The net electric field across the active region It is also determined according to a political parameter, including the doping concentration around the cladding layer, the voltage across the p_n connection surface and the free carrier resistance, so it is generally not equal to the polarization induction field. However, due to its strength, the polarization induction field is still An important factor in determining the net electric field The growth of nitride emitters on the crystalline surface of 001 (pole) has a low emission efficiency of about 1% to 10%. This may be due to the existence of a significant polarization induction field in or near the active region, which causes the efficiency to be affected. Restrictions. Figure 1B shows the energy band equivalent to the device of Figure VIII. When the device is operating, the polarization electric field naturally generated by σ1 & σ2 will reduce the efficiency in a number of ways. First, the dipole causes the Separate 2 (moving in the opposite direction). As shown, the holes of the electron valence band ν are attracted to the negative charge plate σ i at the 5-end of the active region, while the electrons of the conductive band are attracted to the positive charge plate C72 at the other end. The separation space reduces the probability of recombination radiation and reduces the radiation efficiency. Second, the energy barrier of conductive and electron valence band quantum wells is reduced due to the quantization of the electric field. In this way, carriers below Εν and above Ec pass the path shown by the dotted line Escape from the well. Third, the presence of the polarization induced field also causes the carrier to overshoot, as shown by the carrier orbital B, from the higher potential Ec at the σ 1 end to the lower potential EC at the σ 2 end of the active region, and _________- 8 -This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 497276 A7 B7 V. Description of the invention (6) From the lower potential at the σ 2 end of the active area to the higher potential at the σ 1 end ν Application engineers are also concerned about the stability of the emission wavelength when the application deviation increases. If there is a strong polarization induction field, the emission wavelength will move blue with the increase in device offset. Because the device offset increases, the Many free-loading volumes are concentrated in the conductive and electron valence band wells. Because the free carriers are spatially separated, they will form a dipole opposite or contain a polarization induced field. Because the net electric field decreases, the quantified state of the quantum well changes, causing the emission wavelength Blue moving. Figure 1C shows the energy bands of the active layer 5 and the cladding layers 4 and 6 of a light emitter operating on a non-polarized surface with no polarized induced charge. The others are equal, and their radiation efficiency is higher, because the three effects discussed above either disappear or decrease significantly. Several methods have been used to increase the efficiency of GaN-based LEDs. U.S. patents 5,959,307 and 5,578,839, both Nakamura and colleagues, discussed the addition of aluminum to the coating layer to increase the barrier height of the active area to achieve more efficient restrictions on free carriers. However, this addition also changes the composition of the cladding material, from GaN to AlGaN, and its role is to increase the spontaneity and piezoelectric field. The AlmGao. ^ N cladding layer containing b% A1 will generate a double polarization field of 3x106 v / cm in the emitting layer. This kind of electric field will reduce the carrier limitation and increase the spatial separation due to the change of the energy band of the optical transmitter, thus reducing the emission rate. SUMMARY OF THE INVENTION The present invention seeks to improve the operating efficiency of a compound semiconductor LED including layers grown in the direction of polarization by reducing or eliminating the polarization induced charge naturally generated by the crystal to improve carrier limitation, reduce its spatial separation, and reduce

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線 五、發明説明（7 ) 少載體超射。 在一具體·實施例中，這種充電藉由減少靠近活性區結晶 層的材料成分差異而降低。包覆層也可由不同元素化合組 成，各元素傾向消除其他元素的極化效應。 活性層内一或多層的成分或摻染也可以分級以產生空間 電荷反抗極化感應電荷，及准電場反抗由極化感應電荷產 生的極化感應電場。等級可以為連續或分散。 複合半導體結晶也可具有多層發射系統由交叉光發射及 非發特層組成以減少平均極化電場，其中改善發射效率。 在夕層發射系統作為一整體的平均電場，與比厚度的單一 均勻活性區比較為減少或消除。 各種雜質可以併入結晶即根據其能量電位離子化成為一 電荷狀態對抗極化感應電荷以減少或消除其效應。雜質， 較理想包含II，IV，或VI元素群。 極化感應電荷的符號也可以反轉成為鼓勵，而非反抗， 載體限制效率。這些電荷因結晶層的原子層次序反向而反 轉。載體發射的方向也可反轉，反轉p&n型層的生長次 序，以阻擋極化感應電荷。低緩衝層，接觸層，或包覆層 的結晶格常數也可由外部生長技術變化以達到更接近配合 活性區的結晶格常數。這種減少活性區内的應變感應壓電 效應，減少極化感應場使光發射更有效率。 熟悉本技藝者對本發明的這些及其他特徵從下列詳細說 明及附圖將會獲得明白，其中： 1式之簡軍說明 -10 497276 A7 B7 五、發明説明（8 ) 圖1A為一氮化物光發射器已知結構斷面圖； 圖1B為極表面生長相當圖1A的裝置的能帶； 圖1C為極方向生長已知光發射器的能帶； 圖2A含各種雜質的活性區及包覆層的能帶； 圖2B為一雜質分佈曲線； 圖3A為根據本發明具有InGan包覆層的光發射器的斷面 圖， 圖3B為圖3A裝置的能帶； 圖4A及4B分別為含三元A1 Gan及四元A1 InGan包覆層氮化 物半導體的能帶； 圖5為包覆生長中作為時間涵數的原子濃度之間關係曲線 圖； 圖6A為一准電場活性區的能帶； 圖6B及6C分別為連續分級活性區的能帶； 圖7A為多層光發射系統的能帶； 圖7B為含相當圖7A多層光發射系統的寬度的單活性區的 厶匕a · 月匕π ， 圖8Α為相當圖1Α所示單層結構的原子層結構斷面圖； 圖8Β為單半導體層反向原子層結構斷面圖； 圖8C為相當圖8Β裝置結構包覆及發射層的能帶； 圖9Α含η-型之前生長ρ-型層反向氮化物光發射器的斷面 圖； 圖9Β為相當圖9Α裝置的能帶； 圖10Α具有較配合活性區結晶格常數的新緩衝層的氮化 -11 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐）Line V. Description of the invention (7) Less carrier overshoot. In a specific embodiment, this charging is reduced by reducing the difference in the material composition of the crystalline layer near the active region. The cladding layer can also be composed of different elements, and each element tends to eliminate the polarization effect of other elements. One or more components or dopants in the active layer can also be graded to generate space charges against polarization induced charges, and quasi electric fields against polarization induced electric fields generated by polarization induced charges. The rating can be continuous or discrete. The compound semiconductor crystal may also have a multi-layer emission system composed of cross-light emission and non-emission layers to reduce the average polarization electric field, which improves the emission efficiency. The average electric field of the layer emission system as a whole is reduced or eliminated compared with a single uniform active region of a specific thickness. Various impurities can be incorporated into the crystal, i.e., ionized into a charge state based on their energy potential to counter polarization induced charges to reduce or eliminate their effects. Impurities, ideally contain II, IV, or VI element groups. The sign of polarized induced charge can also be reversed to encourage, rather than resist, the carrier limiting efficiency. These charges are reversed as the atomic layer order of the crystalline layer is reversed. The direction of the carrier emission can also be reversed to reverse the growth order of the p & n-type layer to block polarization-induced charges. The lattice constant of the low buffer layer, contact layer, or cladding layer can also be changed by external growth techniques to achieve a lattice constant closer to the active region of the complex. This reduces the strain-induced piezoelectric effect in the active region and reduces the polarization-induced field to make light emission more efficient. Those skilled in the art will understand these and other features of the present invention from the following detailed description and the accompanying drawings, of which: Brief description of the formula 1 497276 A7 B7 5. Description of the invention (8) Figure 1A is a nitride light Sectional view of the known structure of the emitter; Figure 1B is the energy band of the device growing on the pole surface equivalent to that of Figure 1A; Figure 1C is the energy band of the known light emitter growing in the pole direction; Figure 2A Active area with various impurities and coating 2B is an impurity distribution curve; FIG. 3A is a cross-sectional view of a light emitter with an InGan coating according to the present invention; FIG. 3B is an energy band of the device of FIG. 3A; and FIGS. 4A and 4B are Energy bands of ternary A1 Gan and quaternary A1 InGan cladding nitride semiconductors; Figure 5 is a graph showing the relationship between the atomic concentration as a time culmination during cladding growth; Figure 6A is the energy band of a quasi-electric field active region Figures 6B and 6C are the energy bands of the continuously graded active area, respectively; Figure 7A is the energy band of the multilayer light emission system; Figure 7B is a dagger with a single active area equivalent to the width of the multilayer light emission system of Figure 7A π, FIG. 8A is an atomic layer corresponding to the single-layer structure shown in FIG. 1A Fig. 8B is a cross-sectional view of a reversed atomic layer structure of a single semiconductor layer; Fig. 8C is an energy band equivalent to the coating and emission layer of the device structure of Fig. 8B; A cross-sectional view of a nitride light emitter; Figure 9B is the energy band equivalent to the device of Figure 9A; Figure 10A is a nitride with a new buffer layer that matches the crystal lattice constant of the active area-11-This paper size applies Chinese national standards ( CNS) Α4 size (210X 297 mm)

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A7A7

物光發射器的斷面圖；及 圖10B為相當圖10A裝置的能帶。 發明之詳細靜明 各具體實施例的說明係指具有一雙異結構賴 曰層的生長與結晶的極方向垂直的氮化物發射器系 ，設氮化物發射器具有纖鋅礦結晶結構“ 層，其中該包覆層之-。除非說明，結晶 物择私:咖1万位具有足期表群111極性。圖1Α所示的氮北 X .為及圖1B的⑯γ結構將用來作為各具體實施例參 考。 選擇摻染 、，本具粗只她例藉由併人各種摻染劑到半導體内而減少或 肩除極性感應。掺染劑的雜質必須為不會自預定位置擴散 的類型。摻染劑離子化依照其能量成為正或負充電狀態， 即與界面極化感應電荷狀態相反，以減少或消除其效果。 使用的摻染劑種類應表據界面極化感應電荷狀態。正電荷 需要的摻染劑須離子化成為負電荷狀態，反過來為負界面 充電。 圖2^顯示的帶結構為包覆/活性/包覆層併入約ι〇π ^原 子/Cm3作為正電荷源以減少或消除負界面電荷密度cr 1。欲 減少或消除正電荷源密度σ2 , 1〇π電子/cm3的“§可用來作 為負電荷源。摻染劑的濃度分佈係部份根據摻染劑離子化 能及施體/受體量。例如，如果使用鋅（Zn)作為負電荷源減 少摻染劑至σ2，則需要較高摻染劑濃度。摻染劑的雜質分 _____- 12- 本紙張尺度適用中國國家標準(CNS) Α4規格(2l〇x297公釐）A cross-sectional view of an object light emitter; and FIG. 10B is an energy band equivalent to the device of FIG. 10A. The detailed description of the specific embodiments of the invention refers to a nitride emitter system having a double heterostructure layer and a crystal whose growth direction is perpendicular to the polar direction of the crystal. The nitride emitter has a wurtzite crystal structure "layer, Wherein the coating layer is-unless stated, the crystals are private: 10,000 digits have the polarity of the full-time table group 111. The nitrogen north X shown in Fig. 1A and the ⑯γ structure of Fig. 1B will be used as specific Reference to the examples. Selecting doping, this method can reduce or eliminate the polarity induction by incorporating various dopants into the semiconductor. Impurities of the dopant must be of a type that will not diffuse from a predetermined position. The ionization of the dopant becomes a positive or negative charge state according to its energy, which is opposite to the interface polarization induced charge state to reduce or eliminate its effect. The type of dopant used should indicate the interface polarization induced charge state. Positive charge The required dopant must be ionized to a negatively charged state, which in turn charges the negative interface. The band structure shown in Figure 2 ^ is a coating / active / coating layer incorporating about ιππ atoms / Cm3 as a positive charge source To reduce or eliminate negative The surface charge density cr 1. To reduce or eliminate the source of positive charge density "§ σ2, 1〇π electrons / cm3 can be used as the source of the negative charge. The concentration distribution of the dopant is based in part on the ionization energy of the dopant and the amount of donor / acceptor. For example, if using zinc (Zn) as a negative charge source to reduce the dopant to σ2, a higher dopant concentration is required. The impurity content of the dyeing agent _____- 12- This paper size is applicable to China National Standard (CNS) A4 specification (2l0x297 mm)

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497276 A7 B7 五、發明説明（1〇 ) 佈不可能完全配合/消除極化感應電荷以證明效果。其他的 摻染劑雜質.包含群II，IV，或VI元素。 有許多分配（併入）離質進入半導體的方法。對於急速變 化物質成分，其中極化充電及生在一平面的介面上，較理 想，離質分佈為T摻染在或靠近該平面。急速變化為一種 其中已知成分的分子部份變化大於全單層的1 %，即一單結 晶原子層。7摻染意在限制摻染劑到單原子層，產生一摻 染劑片而非一摻染劑體積。對於分級成分變化，不論分離 或連續步驟，雜質分佈較理想也分級。圖2B顯示雜質分佈 的各種型式包含7 61，分離步驟分級62及連續分級63。 中等成分阻擋 本具體實施例係指改善具有GaN包覆層的光發射器發射 效率。一或雙包覆層的材料成分係根據附近層材料成製成 中等以減少或消除雙壓電及自發性介面極化感應電荷。大 約5%錮（In)，例如，可以加到圖1A氮化系統的GaN包覆層 以改變成分包覆層成In0.05Ga0.95N。如此造成包覆層成分為 中等的In〇.2〇Ga〇.8〇N活性區5含20%銦，及GaN導電層3含0% 錮。如圖3 A所示，銦減少兩鄰近層材料成分的差異，於活 性區及包覆層之間達到25%較低介面極化感應電荷板密度 σ 1A為 0.75X1013 電子 /cm2。σ 1B 約為 0·25χ1013 電子 / cm2。 如果在一或雙介面之間，含σ 1A或σΙΒ，有施體型摻染， 一些壓電感應電荷會被篩除，如以上選擇性摻染所討論。 因為σ 1Α或σ 1Β兩者都小於σ 1Α+ σ 1Β，比較傳統結構，這 種裝置結構失去選擇篩除一些極化感應電荷的能力，而維 -13- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐） 裝 訂497276 A7 B7 V. Description of the invention (10) It is impossible for the cloth to fully cooperate / eliminate the polarization induced charge to prove the effect. Other dopant impurities. Contains group II, IV, or VI elements. There are many ways to distribute (incorporate) qualitatively into semiconductors. For the rapidly changing material composition, in which the polarization is charged and is generated on a plane interface, it is more desirable that the qualitative distribution is T doped at or near the plane. The rapid change is one in which the molecular portion of a known component changes by more than 1% of a fully monolayer, a single crystal atomic layer. 7 Dyeing is intended to limit the dopant to a monoatomic layer, creating a dopant sheet rather than a dopant volume. For fractional composition changes, regardless of separation or continuous steps, the impurity distribution is also ideally classified. Fig. 2B shows that various types of impurity distribution include 7 61, separation step classification 62 and continuous classification 63. Medium composition blocking This specific embodiment refers to improving the emission efficiency of a light emitter with a GaN cladding layer. The material composition of the one or two cladding layers is made according to the material of the nearby layer, so as to reduce or eliminate the bimorph and spontaneous interface polarization induced charges. About 5% 锢 (In), for example, can be added to the GaN cladding layer of the nitriding system of FIG. 1A to change the composition cladding layer to In0.05Ga0.95N. As a result, the composition of the cladding layer is medium. In.20Ga.0.8N active region 5 contains 20% indium and GaN conductive layer 3 contains 0% rhenium. As shown in Figure 3A, indium reduces the difference in material composition between the two adjacent layers, achieving a 25% lower interface polarization induced charge plate density σ 1A between the active area and the cladding layer of 0.75 × 1013 electrons / cm2. σ 1B is about 0.25 × 1013 electrons / cm2. If there is a donor-type doping with σ 1A or σIB between one or two interfaces, some piezoelectric-induced charges will be screened out, as discussed above for selective doping. Because σ 1Α or σ 1B are both smaller than σ 1Α + σ 1B, which is a more traditional structure, this device structure loses the ability to select and filter out some polarization-induced charges, and the dimensions of this paper apply Chinese national standards (CNS ) Α4 size (210 X 297 mm) binding

497276 A7 B7 五、發明説明（11 ) 持摻染劑離開活性區。這由重型η-型摻染σ 1B介面以便所 有的這種電荷被有效篩選。如此，活性區的電場超過傳統 結構減少25%之多，增加發射效率。圖3Β顯示這種情況的 能帶圖。如果η-型摻染伸向含σ 1Α介面便獲得進一步減 少。包覆層使用較多錮，活性區的電場較低。不過，使用 太多銦，載體限制可以效棄。同樣的技術可應用於上包覆 層，除了電荷篩選必須使用Ρ-型摻染。 由添加銦至一或雙包覆層，活性區的極化感應電場在裝 置操作下下降，導致發射效率增加，而不管能阻擋較低。 改善LED效率在450 nm至470 nm的範圍證實與一不含銦的 包覆層比較，下包覆層4使用約為5%的低銦含量。 四元阻擋 本具體實施例係指改善具有三元AlGaN包覆層的光發射 器發射效率。添加氮化鋁（A1N)到原生GaN包覆層以產生三 元AlGaN包覆層的技術為大家所知。這種添加產生的包覆 層帶隙大於鄰接及活性區的帶隙以便在活性區的反面產生 較高的能阻擋，因而改善載體限制。不過，添加的鋁也增 加材料成分變化即產生極化感應電荷。事實上，自發性及 壓電極化感應電荷，由自一層及下一層Ga至N黏結的極性 變化決定，在活性區/包覆層介面實際增加。電荷的增加係 因兩種材料的壓電應變及自發性極化之差所致。結果裝置 的活性區中存有南電場。 本發明的一特徵由造成材料成分更相近而減少應變與極 化之差。添加氮化銦（InN)至一或兩三元AlGaN包覆層以產 -14 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 497276 A7 ______B7 五、發明説明（12 ) 生四元AlInGaN包覆層’即造成兩包覆層及活性區的黏結 平均極性相似。層内含有錮會對鋁在包覆層/活性區介面產 生的介面壓電極化感應電荷產生反作用。即是，與三元 AlGaN包覆層及InGaN活性區之間比較，四元AunGaN包覆 層及InGaN活性區之間有一較小的電荷板。結構中大部份 的極化感應電荷受包覆或接觸層之内的重摻染區限制，即 從活性區除去並能有效篩選。添加在這些層的銦量一般係 根據層厚度，材料成分，及生長限制^例如，一 Al0.12In〇.〇3Ga〇.85N包覆層然後一 In〇 〇5Ga〇.95N活性層減少介 面壓電電荷密度約30%，達0·7χ1013電子/cm2，比較下一同 樣活性層Alo.uGao.^N，活性區的電場減少約30%。 四元包覆層的銦及鋁成分導致消除彼此在相關活性區内 的能阻擋效應。雖然，添加錮至AlGaN包覆層降低活性區 的能阻擋，實際上限制效率增加因為極化感應電荷減少。 包覆層不需要相同的成分以改變發射器效率。例如，改 善LED效率約25%，波長380 nm經證實只使用一上四元 Al0.15In0.03Ga0.82N 包覆層含能阻擋 〇.26eV Ec 及 0.08 eV Εν。 下包覆層的成分維持Al〇.15Ga().85N。 在正向偏移條件下接近一 LED打開（如，接近光發射低 限），三元AlGaN及四元AlInGaN包覆層的示意圖分別如圖 4A及4B顯示。在兩種構造中包覆層4及6含相同的鋁濃度， 但是二元構造中並無銦。兩圖中，活性區5中線30的斜度 表示極化感應場。其強度根據接觸層3及7之間的偏移，包 覆層4及6的掺染’及介面極化電荷板密度大小。兩種構造497276 A7 B7 V. Description of the invention (11) Hold the dopant out of the active area. This is done by heavy-duty η-type doping with the σ 1B interface so that all such charges are effectively screened. In this way, the electric field in the active area is reduced by as much as 25% over the conventional structure, increasing the emission efficiency. Figure 3B shows the band diagram for this case. If the η-type doping extends to the σ 1A-containing interface, a further reduction is obtained. The cladding layer uses more rhenium, and the electric field in the active region is lower. However, with too much indium, the carrier restrictions can be discarded. The same technique can be applied to the upper cladding, except that charge screening must use P-type doping. By adding indium to one or two cladding layers, the polarization-induced electric field of the active area decreases under the operation of the device, resulting in an increase in emission efficiency, regardless of the lower barrier. Improved LED efficiency in the range of 450 nm to 470 nm confirms that the lower cladding layer 4 uses a low indium content of about 5% compared to an indium-free cladding layer. Quaternary blocking This specific embodiment refers to improving the emission efficiency of a light emitter with a ternary AlGaN cladding layer. The technique of adding aluminum nitride (A1N) to the native GaN cladding layer to produce a ternary AlGaN cladding layer is known. The band gap of the cladding layer caused by this addition is larger than the band gap of the adjacent and active regions so as to generate a higher energy barrier on the opposite side of the active region, thereby improving the carrier limitation. However, the addition of aluminum also increases the change in material composition and generates polarization-induced charges. In fact, the spontaneous and piezoelectric polarization-induced charges are determined by the change in the polarity of Ga to N bonding from one layer and the next layer, which actually increases in the active area / cladding interface. The increase in charge is due to the difference in piezoelectric strain and spontaneous polarization between the two materials. As a result, a south electric field exists in the active area of the device. A feature of the present invention is to reduce the difference between strain and polarization by making the material composition closer. Add indium nitride (InN) to one or two ternary AlGaN cladding layers to produce -14-This paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) 497276 A7 ______B7 V. Description of the invention (12) The formation of the quaternary AlInGaN cladding layer 'causes the average polarities of the adhesion between the two cladding layers and the active region to be similar. The inclusion of europium in the layer will have an adverse effect on the piezoelectric polarization induced charge of the interface generated by the aluminum at the cladding / active area interface. That is, compared with the ternary AlGaN cladding layer and the InGaN active region, there is a smaller charge plate between the quaternary AunGaN cladding layer and the InGaN active region. Most of the polarization-induced charges in the structure are limited by the heavily doped regions within the coating or contact layer, that is, they are removed from the active region and can be effectively screened. The amount of indium added to these layers is generally based on layer thickness, material composition, and growth restrictions ^ For example, an Al0.12In0.03Ga.85N cladding layer and then an In0055Ga 0.95N active layer reduce the interface pressure The electric charge density is about 30%, reaching 0.7 × 1013 electrons / cm2. Compared with the next same active layer Alo.uGao. ^ N, the electric field in the active region is reduced by about 30%. The quaternary cladding's indium and aluminum components result in elimination of the energy blocking effect of each other in the relevant active region. Although the addition of rhenium to the AlGaN cladding layer reduces the energy barrier of the active region, it actually limits the increase in efficiency because the polarization induced charge decreases. The cladding does not need the same composition to alter the efficiency of the emitter. For example, the LED efficiency is improved by about 25%, and the wavelength of 380 nm has been confirmed to use only one or four quaternary Al0.15In0.03Ga0.82N cladding layers that can block 0.26eV Ec and 0.08 eV Εν. The composition of the lower cladding layer was maintained at Al0.155Ga (). 85N. In a forward-biased condition approaching an LED turn on (eg, near the low emission limit), schematic diagrams of ternary AlGaN and quaternary AlInGaN cladding layers are shown in Figures 4A and 4B, respectively. The cladding layers 4 and 6 contain the same aluminum concentration in both configurations, but there is no indium in the binary structure. In both figures, the slope of the centerline 30 of the active region 5 represents the polarization-induced field. Its strength is based on the offset between the contact layers 3 and 7, the doping of the coating layers 4 and 6, and the density of the interface polarized charge plate. Two constructions

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線 ______-15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公爱） 497276 A7 B7 五、發明説明（13 ) 使用的偏移包覆層4，約2,6V，η-型（Si)摻染濃度約 lxl018/cm3 .，及包覆層 6，約 lxl019/cm3，ρ型（Mg)摻染濃 度。含三元AlGaN包覆層經過活性區5產生的極化感應電場 約 8·8χ105 V/cm。 如圖4A所示，本電場導致自Gan接觸層3及7發射的電子 及孔藉由限制載體接近離發射接觸層最遠介面31而產生空 間分離。這種現象減少載體發射性再結合的可能性。圖4B 所示的四元AlInGaN包覆層4及6具有一較低極化感應電場 於活性區内。下面Al0.05In0.025Ga0.925N包覆層4及上面 Al0.20In0.10Ga0.70N 包覆層 6，電場約為 4·6χ105 V/cm。造些 層也具有較低的極化能3 1，減少自由載體的空間分離以改 善放射性再結合。這是一種在減少極化感應電荷與維持最 大載體限制的高能阻擋之間的妥協，可由實驗決定。 具有分級成分的包覆層 在本具體實施例中，一或兩包覆層的成分分級以產生一 空間電荷即與在包覆層及活性區之間介面產生一反介面極 化效應。等級改變極方向的材料成份以產生壓電電荷。等 級可以是連續或分散。分配的電荷極性必須與目標介面極 化充電相反。極性由分級層及其兩相鄰層的成分決定。例 如，圖1A的低GaN接觸層3及低的AlGaN接觸層4產生一正 介面電荷板密度。這種電荷可由本層漸變的A1含量分配包 覆層4的整個體積。較詳細，低包覆層4可以分級自GaN成 分含0% A1接近GaN導電層3，至Alo.ioGao.9oN含10% A1接近 InGaN活性區5。所產生的正空間電荷必須分割計量0·75χ1013 _-16- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 497276 A7 B7 五、發明説明（14 ) 電子/cm2負電荷板密度1於Al0.10Ga0.9〇N/In0.05Ga0.95N介面。 負電荷板.密度即存在上GaN接觸層7及上AlGaN包覆層6可 由A1含量分級分配包覆層6的整個體積。所產生的負空間 電荷必須分割計量正電荷板密度2以減少或消除在活性區 上的效應。空間電荷的大小係根據發生分級的距離。圖5 顯示AlGaN包覆層由每單位時間添加A1原子（連續41或分離 步驟42)至結晶表面的等級，開始含0% A卜添加鎵及氮原 子的濃度40在整個生長期間中保持均勻。達到適當的包覆 層厚度及分級，便停止操作。兩種材料的變化超晶格周期 也可以作成分分級。 這是一種因靠近活性區的自由載體的利用性產生的較佳 裝置性能及摻染劑進入的反效應之間的妥協。由分級包覆 層產生的空間電荷容許摻染劑雜質放在分級層的外面 (如，只在導電層），而吸引其自由載體。分級成分的空間 電荷自然吸引自由摻染劑載體進入鄰近導電層的包覆層。 所以，摻染劑雜質不需要靠近活性區以產生自由載體至此 區域，及可以在鄰近的包覆層中被消除或減少。 分級或混合成分的活性區 半導體裝置的成分變化對自由載體的影響，可能與電場 的影響相似，並作為準電場看待。見Herbert Kroemei*，π帶 偏置及化學黏結：異結構應用”，Physica Scripta期刊，卷 T68，頁10- 16，1996。本發明的本具體實施例使用一準電 場計量自由載體極化感應電場。活性區内建立一準電場是 可能，並不需要有任何系統内的充電。圖6A顯示準電場係 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 497276 A7 B7 五、發明説明（15 ) 由能帶的升降率51產生，而非由真實的充電產生。升降率 可由活性區5的成分分級產生。在準電場中，導電帶中的 電子移動到一低能量導向的正電荷，原子價帶中的孔移動 到一高能量導的向負電荷。注意，本電場中的活性區帶構 造為非平行。反之，電場中的能帶則具有平行關係，如圖 1B所示。活性區可以按成分分級以產生帶構造的一理想的 升降率，及一理想準電場效應。產生準電場，不過，應與 至少一載體的真實電場效應相反。活性區的材料成分可以 由改變銦成分而分級（連續或不連續）。根據區的寬度及理 想的放射性質，可以由低至高或相反的銦成分合併成一分 級成分。重要的性質一般包含發射波長及操作電流。 圖6B及6C表示準電場對活性區5的能帶的淨影響。圖6B 中活性區具有連續分級的銦濃度從低的5%至高的10%，升 降率約為1 % /nm。在包覆層4及活性區5之間介面的銦濃度 為最低，及在活性區的反面增加至最高濃度。在這種情況 下，準電場減少原子價帶的極化感應電場。相反方向的分 級會導致導電帶的電場偏移。在圖6C中，活性區具有銦的 升降率及濃度又從5%至10%及平均升降率為1%/nm，但方 向相反。因為是載體形式的一種，電子或孔正在向外擴 散，有了較佳的載體空間重疊，增加發射效率。 多層發射含電場補償阻擋 圖7A顯示一具有電場補償能阻擋93的多層發射系統90。 在本具體實施例中，發射系統90由含交替活性區91 (如光 發射）及包覆層92 (非發射）組成。包覆層92的能阻擋93具有 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 497276 A7 -------------B7 五、發明説明（16 ) 限制活性區發射載體，及反抗其極化感應電場的雙重功 此。所產生的電場及多層發射系統9〇的總厚度一般依照數 1 ’厚度及活性區91及包覆層92的成分。多層系統90，含 四個In〇.iGa〇.9N，活性區91各2 nm厚及Ai〇〇5Ga〇95N及三個 包覆層92各5nm厚，多層系統的總厚度為23 ηιη及大約平均 極化感應電場強度為4.5xl〇5 V/cm。單活性區1〇〇含比體積 的能帶結構，如圖7B所示，可具有一極化電場強度為9x j 〇5 V/cm。使用多層發射系統會增加活性區的總體積，並確保 因極化感應電荷產生的平均電場減少，比較比體積的單活 性區結構。 反相極化 在本具體實施例中，一化合物半導體自然產生的極化感 應電荷為反相以便改善載體限制。原子層的反生長次序中 的内原子黏結係自然離子化因為鎵原子稍為正及氮原子為 負，產生一偶極子通過黏結。圖8入分別顯示沿結晶表面極 方向生長的鎵及氮原子層。按顯示的次序，連續原子層在 Ga及N之間叉替，各層單含Qa原子層的底部表面7〇及單含 N原子層的頂邵表面71。各偶極子72經過各GaN原子對相加 以產生一平均極化感應電場73穿過標示方向的層。其對活 性區能帶的效應如以上圖1B所述。 這種自然產生的極化感應電場73可由各原子偶極子的方 向反轉而反相。即是由Ga及N原子層的生長次序倒反完 成。在圖8B中，原子層的反生長次序從n開始，然後仏及 N原子層交替直到頂部達到Ga層74。原子層的生長次序可 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公爱）Line ______- 15- This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 public love) 497276 A7 B7 V. Description of the invention (13) Offset coating 4 used, about 2,6V, η- Type (Si) doping concentration is about lxl018 / cm3, and coating layer 6, about lxl019 / cm3, p type (Mg) doping concentration. The polarization-induced electric field generated by the ternary AlGaN cladding layer passing through the active region 5 is about 8.8 x 105 V / cm. As shown in Fig. 4A, this electric field causes the electrons and holes emitted from the Gan contact layers 3 and 7 to be spatially separated by restricting the carrier from approaching the interface 31 furthest from the emission contact layer. This phenomenon reduces the possibility of carrier recombination. The quaternary AlInGaN cladding layers 4 and 6 shown in FIG. 4B have a lower polarization induced electric field in the active region. The lower Al0.05In0.025Ga0.925N cladding layer 4 and the upper Al0.20In0.10Ga0.70N cladding layer 6 have an electric field of approximately 4 · 6 × 105 V / cm. The formation of these layers also has a lower polarization energy 31, reducing the spatial separation of free carriers to improve radioactive recombination. This is a compromise between reducing the polarization-induced charge and maintaining the maximum carrier-bound high-energy barrier, which can be determined experimentally. Coating layer with graded components In this specific embodiment, the components of one or two coating layers are graded to generate a space charge, that is, to produce an inverse interface polarizing effect with the interface between the coating layer and the active region. The grade changes the composition of the material in the pole direction to generate a piezoelectric charge. Grades can be continuous or discrete. The polarity of the distributed charge must be opposite to that of the target interface. The polarity is determined by the composition of the hierarchical layer and its two adjacent layers. For example, the low GaN contact layer 3 and the low AlGaN contact layer 4 of FIG. 1A produce a positive interface charge plate density. This charge can distribute the entire volume of the coating layer 4 by the gradual Al content of this layer. In more detail, the low cladding layer 4 can be classified from the GaN component containing 0% A1 close to the GaN conductive layer 3 to Alo.ioGao.9oN containing 10% A1 close to the InGaN active region 5. The positive space charge generated must be divided and measured 0 · 75χ1013 _-16- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 497276 A7 B7 V. Description of the invention (14) Electron / cm2 negative charge The density of the plate is 1 at the interface of Al0.10Ga0.9〇N / In0.05Ga0.95N. Negatively-charged plate. The density is the presence of the upper GaN contact layer 7 and the upper AlGaN cladding layer 6 and the entire volume of the cladding layer 6 can be distributed by the Al content. The resulting negative space charge must be split to measure the positive charge plate density2 to reduce or eliminate the effect on the active area. The magnitude of the space charge is based on the distance at which the classification takes place. Figure 5 shows that the AlGaN cladding layer is graded from the addition of A1 atoms per unit time (continuous 41 or separation step 42) to the surface of the crystal. The initial concentration of 0% A and the concentration of added gallium and nitrogen atoms 40 remain uniform throughout the growth period. When the proper coating thickness and classification are reached, the operation is stopped. The changing superlattice period of the two materials can also be used for composition classification. This is a compromise between better device performance due to the availability of free vectors near the active area and the counter-effects of dopant entry. The space charge generated by the graded coating allows the dopant impurities to be placed outside the graded layer (for example, only in the conductive layer), attracting its free carrier. The space charge of the graded components naturally attracts the free dopant carrier into the coating layer adjacent to the conductive layer. Therefore, the dopant impurities need not be close to the active area to create a free carrier to this area, and can be eliminated or reduced in the adjacent coating. Graded or mixed component active area The effect of a change in the composition of a semiconductor device on a free carrier may be similar to that of an electric field, and is treated as a quasi-electric field. See Herbert Kroemei *, π-Band Bias and Chemical Bonding: Heterostructure Applications ", Physica Scripta Journal, Volume T68, Pages 10-16, 1996. This embodiment of the present invention uses a quasi-electric field to measure the polarization-induced electric field of a free carrier It is possible to establish a quasi-electric field in the active area, and there is no need for any charging in the system. Figure 6A shows the quasi-electric field system -17- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 497276 A7 B7 V. Description of the invention (15) The rate of rise and fall of the energy band 51 is generated instead of the actual charging. The rate of rise and fall can be generated by the composition of the active area 5. In a quasi electric field, the electrons in the conductive band move to one. A low energy-oriented positive charge moves the pores in the atomic valence band to a high-energy negative charge. Note that the active zone in the electric field is non-parallel. Conversely, the energy bands in the electric field have a parallel relationship. As shown in Figure 1B. The active area can be graded by composition to produce an ideal rise and fall rate of the belt structure, and an ideal quasi-electric field effect. A quasi-electric field is generated, but should be related to the real electric field of at least one carrier It should be the opposite. The material composition of the active zone can be classified (continuous or discontinuous) by changing the indium composition. Depending on the width of the zone and the ideal radioactivity, it can be combined from a low to high or opposite indium composition into a graded composition. Important properties are generally Includes emission wavelength and operating current. Figures 6B and 6C show the net effect of the quasi-electric field on the energy band of active region 5. The active region in Figure 6B has a continuously graded indium concentration from low 5% to high 10%, with a rise and fall rate of approximately 1% / nm. The indium concentration at the interface between the cladding layer 4 and the active region 5 is the lowest, and increases to the highest concentration on the opposite side of the active region. In this case, the quasi electric field reduces the polarization induction of the atomic valence band. Electric field. The classification in the opposite direction will cause the electric field of the conductive band to shift. In FIG. 6C, the active region has a rise and fall rate and concentration of indium from 5% to 10% and an average rise and fall rate of 1% / nm, but in opposite directions. Because it is a kind of carrier, electrons or holes are diffusing outward, and there is better carrier space overlap, which increases the emission efficiency. Multi-Layer Emission with Electric Field Compensation Blocking Figure 7A shows a multi-layer with electric field compensation block 93 Launching system 90. In this embodiment, the launching system 90 is composed of alternating active regions 91 (such as light emission) and a cladding layer 92 (non-emission). Standards apply to Chinese National Standard (CNS) A4 specifications (210X297 mm) 497276 A7 ------------- B7 V. Description of the invention (16) Restrict active area emission carrier and resist its polarization induction The dual work of the electric field. The generated electric field and the total thickness of the multi-layer emission system 90 are generally based on the number 1 ′ and the composition of the active region 91 and the cladding layer 92. The multi-layer system 90 contains four InO.iGa〇. 9N, active region 91 each 2 nm thick and Ai005Ga95N and three cladding layers 92 each 5 nm thick. The total thickness of the multilayer system is 23 ηηη and the average average polarization induced electric field strength is 4.5x105 V / cm. The band structure with a specific volume of 100 in the single active region, as shown in FIG. 7B, may have a polarization electric field strength of 9 × j0 5 V / cm. The use of a multi-layer emission system will increase the total volume of the active area and ensure that the average electric field due to polarization-induced charges is reduced, comparing the specific volume of a single active area structure. Reverse Polarization In this embodiment, the polarization induced charge naturally generated by a compound semiconductor is reversed in order to improve carrier confinement. The internal atomic bonding in the anti-growth order of the atomic layer is naturally ionized because the gallium atom is slightly positive and the nitrogen atom is negative, creating a dipole through the bonding. Figure 8 shows the gallium and nitrogen atom layers grown along the polar direction of the crystal surface, respectively. In the order shown, the continuous atomic layers are alternated between Ga and N, with each layer containing only the bottom surface 70 of the Qa atomic layer and the top surface 71 of the single N atomic layer. Each dipole 72 is added through each GaN atom pair to generate an average polarization induced electric field 73 across the layer in the indicated direction. Its effect on the energy band of the active zone is as described in Fig. 1B above. This naturally occurring polarization induced electric field 73 can be inverted and reversed by the direction of each atomic dipole. That is, the growth order of Ga and N atomic layers is reversed. In FIG. 8B, the reverse growth order of the atomic layer starts from n, and then alternates with the N atomic layer until the top reaches the Ga layer 74. The growth order of the atomic layer can be -19- This paper size applies to China National Standard (CNS) A4 specification (210X 297 public love)

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線 497276 A7 B7 五、發明説明（17 ) 以用各種方法改變。第一，如果一開始為N終結的GaN或 AlGaN基層’則生長N面極性並不困難。不過，大部份的生 長係在藍寶石或SiC上完成及生長自然為理想的Ga極性。 已有改變極性的技術。一種技術使用在N含量大的條件下 MBE生長以改變極性。第二種技術使用沉積約1個錳單層 在表面上，造成以後各層為N極性。第三方法為使用由 MOCVD或MBE外延附生原子層以嘗試強制在正確極性中核 化。 各偶極子75產生一極化感應電場76方向與圖8A的電場73 相反。其活性區能帶的效應如圖8 C所示。雖然這種生長次 序連續以產生一極化感應電場於活性區内，電場的偶極子 係為反相，如此，能讓發射載體在裝置打開之前，如自由 載體開始再結合’篩選（中性化）極化感應電荷密度σ 1及σ 2。自高於Ec的包覆層4發射向活性區的電子在包覆/活性區 介面上積集接近σ2。這些自由載體的累積電荷中性化j2。 同樣’自低於Εν的包覆層6發射孔中性化j 1接近包覆/活性 區介面。在裝置打開之前，這種方法”整平”活性區能帶， 與圖1C所7F相似。結果，裝置的效率不會因為極化感應電 荷而降低。這種裝置結構的另外優點為載體超射，路徑 A，大幅減少，比較傳統結構。另外，電子及孔的載體限 制增加。 反相結構 在一傳統LED中，η型層生長在p型之前。本具體實施例 反轉這種生長次序。圖9Α為一斷面圖顯示LED的新生長次Line 497276 A7 B7 V. Description of Invention (17) It can be changed in various ways. First, if the N-terminated GaN or AlGaN base layer is initially used, it is not difficult to grow the N-plane polarity. However, most of the growth is done on sapphire or SiC and the growth is naturally the ideal Ga polarity. There are techniques to change the polarity. One technique uses MBE growth under high N content to change polarity. The second technique uses a single layer of manganese deposited on the surface, causing subsequent layers to be N-polar. The third method is to use an epitaxial layer epitaxially grown by MOCVD or MBE to try to force nucleation in the correct polarity. Each dipole 75 generates a polarization induced electric field 76 in a direction opposite to the electric field 73 of FIG. 8A. The effect of the band of the active region is shown in Figure 8C. Although this growth sequence is continuous to generate a polarization-induced electric field in the active region, the dipole system of the electric field is reversed. In this way, the launching carrier can be opened before the device is opened. ) Polarization-induced charge densities σ 1 and σ 2. Electrons emitted from the cladding layer 4 higher than Ec toward the active region accumulate close to σ2 on the cladding / active region interface. The accumulated charge of these free carriers neutralizes j2. Similarly, the neutralization j 1 of the emission hole 6 from the cladding layer 6 lower than Ev is close to the cladding / active area interface. This method "levels" the active zone energy band before the device is opened, similar to 7F in Figure 1C. As a result, the efficiency of the device is not reduced by the polarization induced charge. Another advantage of this device structure is that the carrier is overshooting, and the path A is greatly reduced, compared with the traditional structure. In addition, electron and hole carrier restrictions are increased. Inverted structure In a conventional LED, the n-type layer is grown before the p-type. This specific embodiment reverses this order of growth. FIG. 9A is a sectional view showing the new growth times of the LED

裝 玎Pretend

497276 A7 B7 五、發明説明（18 ) 序，p型接觸層及包覆層83，84的生長在η型包覆層及接觸 層86及87之前。本具體實施例各層的厚度及材料成分與圖 1Α的氮化物發射器相似。儘管是反相層結構，介面極化感 應電荷板密度σΐ及σ2因各層材料成分變化仍然向前。其 在活性區的能帶效應如圖9Β所示，主要與圖1Β相似。不 過，ρ型及η型層生長次序反轉也會改變所發射電子及孔進 入活性區的方向。這種方法中，必須由η型接觸層發射的 電子，由高於Ec的接觸層87，從左側射入活性區85。孔由 低於Εν的ρ型接觸層83從右側射入。這種反相層次序能讓 載體在裝置打開之前與前述具體實施例相似，篩選電荷密 度，其中電場方向相反取代層結構。這種結構也與前述具 體實施例相似，減少載體超射及增加載體限制。 改變結晶格常數 圖10 Α及10Β顯示另外的方法改善結構中的極化感應電 場。藉由改變活性區113下面結構的平面内結晶格常數以 便活性層較少應變，或應變方向相反，壓電極化感應電場 可以減少，消除或在活性區内反相如圖10B的能帶曲線所 示。下方結晶格常數可以使用多種方法改變。第一，緩衝 層110可以用不同的材料成分生長，例如InAlGaN，致使緩 衝層的平面内結晶格常數接近InGaN活性層的平面内結晶 格常數。InAlGaN緩衝層的帶隙也會大於InGaN活性層導致 沒有光吸收。用於改變平面内結晶格常數的第二種方法係 使用傳統緩衝層，但至少送份η接觸層111使用不同材料成 份生長，例如AlInGaN，致使緩衝層的平面内結晶格常數 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 497276 A7 B7497276 A7 B7 V. Description of the invention (18) In the order, the p-type contact layer and the cladding layers 83, 84 grow before the n-type cladding layer and the contact layers 86 and 87. The thickness and material composition of each layer in this embodiment are similar to the nitride emitter of FIG. 1A. Despite the inversion layer structure, the interface polarization-induced charge plate densities σΐ and σ2 are still moving forward due to changes in the material composition of each layer. The band effect in the active region is shown in Fig. 9B, which is similar to that in Fig. 1B. However, inversion of the growth order of the p-type and n-type layers will also change the direction in which the emitted electrons and holes enter the active region. In this method, electrons that must be emitted from the n-type contact layer are incident from the contact layer 87 higher than Ec into the active region 85 from the left. The hole is projected from the right by a p-type contact layer 83 which is lower than ν. This reversed layer order allows the carrier to be similar to the previous embodiment in that the charge density is screened before the device is opened, in which the direction of the electric field replaces the layer structure. This structure is also similar to the previous specific embodiment, reducing carrier overshoot and increasing carrier limitation. Changing the Lattice Constant Figures 10A and 10B show another method to improve the polarization induced electric field in the structure. By changing the lattice constant in the plane of the structure under the active region 113 so that the active layer is less strained or the direction of the strain is reversed, the piezoelectric polarization induced electric field can be reduced, eliminated or reversed in the active region as shown by the energy band curve in FIG. 10B Show. The lower lattice constant can be changed using a variety of methods. First, the buffer layer 110 can be grown with different material components, such as InAlGaN, so that the in-plane lattice constant of the buffer layer is close to the in-plane lattice constant of the InGaN active layer. The band gap of the InAlGaN buffer layer is also larger than that of the InGaN active layer, resulting in no light absorption. The second method for changing the lattice constant in the plane is to use a conventional buffer layer, but at least η contact layer 111 is grown using a different material composition, such as AlInGaN, resulting in an in-plane lattice constant of the buffer layer -21-This paper Standards apply to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 497276 A7 B7

五、發明説明（19 ) 改變接近活性層的平面内結晶格常數。如此，上 優點便可實3見。第三種方法如所述的n接觸層才目同方:在 底包覆層112内改變結晶格常數。在第四方法中，活性區 生長厚度足以造成應變釋放，如此，、;、肖除活性層内的壓二 感應電場。方法選擇一般為一種提供最少量的材料位錯包 保持材料品質及提供上述裝置結構的優點的方法。 進一步減少或消除大部份殘留極化感應電荷有許多方 法上述各種具體貫施例可以混合及配合並應用於任何或 全部適合層，發射或非發射。任何已知的應用，特別具體 貫施例或具體實施例組合須根據該應用的性質，及能以實 驗決定。例如，一種可能性為合併AlGaN包覆層92&InGaN 活性區91包含四次阻擋所述的鋁及銦的反效應。另外為分 級至少一包覆層92的鋁成分及/或添加雜質離子化成為介面 極化感應電荷相反的充電狀態。 雖然本發明的許多具體實施例已經被顯示及說明，熟悉 本技藝者仍會有一些變化及修改的具體實施例。例如，雖 然說明係指氮化物發射器，任何或全部具體實施例可以用 來說明包含其他材料的光發射器極化感應電荷的問題。那 些變化及修改的具體實施例可以預期，並可以製造而不會 背離所附申請專利範圍所定義的本發明精神。 _____-22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）5. Description of the invention (19) Change the lattice constant in the plane close to the active layer. In this way, the above advantages can be seen. The third method is the same as the n-contact layer described above: changing the lattice constant in the bottom cladding layer 112. In the fourth method, the growth thickness of the active region is sufficient to cause strain release, so that, in addition to the induced electric field in the active layer. The method selection is generally a method that provides a minimum amount of material dislocation packages to maintain the quality of the materials and provide the advantages of the device structure described above. There are many ways to further reduce or eliminate most of the residual polarization induced charges. The various specific embodiments described above can be mixed and matched and applied to any or all suitable layers, emissive or non-emissive. Any known application, particularly a specific embodiment or combination of specific embodiments, must be based on the nature of the application and can be determined experimentally. For example, one possibility is to merge the AlGaN cladding layer 92 & InGaN active region 91 contains the counter-effects of blocking the aluminum and indium four times. In addition, the aluminum component of the at least one cladding layer 92 is graded and / or impurities are added to ionize into a state of charge in which the interface polarization induced charges are opposite. Although many specific embodiments of the present invention have been shown and described, those skilled in the art will still have some changes and modifications of the specific embodiments. For example, although the description refers to a nitride emitter, any or all of the specific embodiments may be used to illustrate the problem of polarization induced charge of a light emitter containing other materials. Specific embodiments of those changes and modifications are contemplated and can be made without departing from the spirit of the invention as defined by the scope of the appended patents. _____- 22- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 玎Pretend

Claims (1)

497276 A8 B8 C8497276 A8 B8 C8 1 · 一種光發射器，包含： j 一南效率雙異結構包含11型及？型接觸層，及包覆層三 | 明治式夾一活性光發射區及沿一結晶極方向生長， | 該高效率雙異結構具有一結構差自一基礎異結構包含 i 活f生區含原子偶極子以產生一極化感應電場穿過活 丨 性區，及二兀或三元包覆層含n型接觸層其生長次序在 i 該P型接觸層之前， I 該結構差至少部份降低該高效率雙異結構活性區的極 ·ί 化感應電場效應減少的效率，比較基礎異結構的極化 | 感應電場。 : 2 ·如申請專利範圍第1項之光發射器，該活性區包含 | InGaN及該結構差包含添加ιη至至少該包覆層之一，致 ·丨 使至少該包覆層之一包含AlxInyGabx-yN，其中0 € X $ 1 ： 及OSyS 1。 1 丁 3 ·如申請專利範圍第1項之光發射器，其中該結構差包含 | 一至少該包覆層之一的成分升降率以對抗至少該包覆 i 層之一及活性區之間介面的介面極化效應。 4 ·如申請專利範圍第1項之光發射器，其中該結構差包含 ：; 一至少該活性區的成分升降率以對抗該極化感應電 丨. 5 ·如申請專利範圍第1項之光發射器，其中該結構差包含 ί 添加摻染劑於至少該包覆層之一並減少該極化感應電 ：丨 場。 6 .如申請專利範圍第丨項之光發射器，其中該結構差包含 1 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 4972761 · An optical transmitter, which includes: j-South efficiency double heterostructure including type 11 and? -Type contact layer and cladding layer three | Meiji-type active light emitting region and growth along a crystalline pole, | The high-efficiency double heterostructure has a poor structure since a basic heterostructure contains i and f The dipoles pass through the active region to generate a polarization-induced electric field, and the binary or ternary cladding layer contains an n-type contact layer. The growth order is i before the p-type contact layer. Polarization of high-efficiency double-heterostructure active region Reduced efficiency of induced electric field effect. Compare the polarization of the basic heterostructure | Induced electric field. : 2 · If the light emitter of the first patent application scope, the active region contains | InGaN and the poor structure includes adding ιη to at least one of the cladding layers, so that at least one of the cladding layers contains AlxInyGabx -yN, where 0 € X $ 1: and OSyS 1. 1 ding 3 · The light emitter of item 1 in the patent application range, wherein the structural difference includes | a component elevation rate of at least one of the coating layers to counteract at least one of the coating layer i and the interface between the active regions Interface polarization effect. 4 · If the light emitter of the scope of the patent application, the structure difference includes :; at least the component rise and fall rate of the active area to counter the polarization induced electricity 丨. 5 · If the scope of the patent application of the light An emitter, wherein the poor structure includes adding a dye to at least one of the coating layers and reducing the polarization induced electric field. 6. The light emitter as described in the scope of the patent application, where the structural difference includes 1 -23- This paper size applies to China National Standard (CNS) A4 (210X297 mm) 497276 該活性區原子偶極子的一反相。 7·如申請專利範圍第丨項之光發射器，其中該結構差包含 該P型接觸層其生長次序在η型接觸層之前。 8 ·如申請專利範圍第丨項之光發射器，其中該結構差包含 多活性區與包覆層交替。 9 ·如申請專利範圍第丨項之光發射器，其中該結構差包含 至少部份釋放應變的較低包覆層具有一平面内結晶格 常數接近無應變活性區材料的平面内結晶格常數值。 10·如申請專利範圍第！項之光發射器，其中該結構差包含 土少邵伤釋放應變的n型接觸層具有一平面内結晶格常 數接近無應變活性區材料的平面内結晶格常數值。 U.如申請專利範圍第1項之光發射器，生長在一緩衝層 上，該結構差包含該緩衝層至少釋放部份應變及具^ 一平面内結晶格常數接近無應變活性區材料的平面内 結晶格常數值。 12. 一種沿垂直結晶極方各生長之混合半導體裝置，包含 至少二結晶層其材料成分沿該極方向變化； 至少該三層之一具有一中等材料成分 的材料成分。 比較兩相鄰層 13·如申請專利範圍第12項之裝置，其中該至少—、 AlxInyGa^x-yN 包覆層，其中 曰為 14· 一種沿垂直結晶極方各生長之混合半導體裝置，勹. 複數個結晶層其材料成分沿該極方向變 包含： 乂產生“、 一極化感應電荷集中於至少該數層之一層； 土 ^ -24-An opposite phase of the active area atomic dipole. 7. The light emitter of item 丨 in the scope of patent application, wherein the structural difference includes the P-type contact layer whose growth order precedes the n-type contact layer. 8 · The light emitter according to item 丨 of the patent application, wherein the structural difference includes alternating multiple active regions and cladding layers. 9 · The light emitter according to item 丨 of the patent application, wherein the structural difference includes at least a part of the lower cladding with a strain release, which has an in-plane lattice constant close to the in-plane lattice constant value of the strain-free active region material. . 10 · If the scope of patent application is the first! The item of the light emitter, wherein the n-type contact layer including the difference in soil release strain has an in-plane crystal lattice constant close to the in-plane lattice constant value of the strain-free active region material. U. For example, the light emitter of the scope of patent application, grows on a buffer layer, the structure difference includes that the buffer layer releases at least part of the strain and has a plane with a lattice constant close to the plane of the strain-free active region material. Internal lattice constant value. 12. A hybrid semiconductor device each grown along a vertical crystalline pole, comprising at least two crystalline layers whose material composition changes along the direction of the pole; at least one of the three layers has a material composition with a medium material composition. Compare two adjacent layers 13. For example, the device in the scope of patent application No. 12, wherein the at least-, AlxInyGa ^ x-yN cladding layer, which is called 14 · a hybrid semiconductor device that grows along each vertical crystal pole, 勹The material composition of the plurality of crystalline layers along the polar direction includes: 乂 produces ", a polarization induced charge is concentrated in at least one of the layers; soil ^ -24- kk 497276 A8 B8 C8 D8 六、申請專利範圍 至少該數層之一層包含一包覆層其成分係經分級以產 生一空間電荷超過該等級的體積以反抗該電荷集中。 15. 如申請專利範圍第14項之裝置，該分級包覆層包含 AlxInyGa^x-yN，其中 0$ xS 1 及 0$ 1。 16. —種沿垂直結晶極方各生長之混合半導體裝置，包含： 複數個結晶層其材料成分沿該極方向變化； 至少該數層之一具有分級成分產生一空間電荷超過該 等級的體積以容許摻染劑離質從相鄰層回來沉澱。 17. 如申請專利範圍第16項之裝置，該分級層包含 AlxInyGar X· yN，其中OSx^l 及 O^ySl。 18. —種沿垂直結晶極方各生長之混合半導體裝置，包含： 複數個結晶層其材料成分沿該極方向變化以產生一極 化感應電場於至少該數層之一層； 該數層之一包含一活性區其成分係經分級以產生一准 電場以反抗該極化感應電場。 19. 如申請專利範圍第18項之裝置，其中該等級產生該活 性區的能帶升降率以產生該准電場。 20. 如申請專利範圍第18項之裝置，該活性區包含 AUIiiyGamN，其中 0$ xS 1 及 OS yS 1。 21. —種沿垂直結晶極方各生長之混合半導體裝置，包含： 複數個結晶層其材料成分沿該極方向變化以產生一極 化感應電荷集中於至少該數層之一層； 至少該數層之一合併掺染劑雜質經離子化成為至少與 該電荷集中之一相反的充電狀態。 -25- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)497276 A8 B8 C8 D8 6. Scope of patent application At least one of the layers includes a coating layer whose composition is graded to produce a volume with a space charge exceeding the grade to resist the charge concentration. 15. For the device in the scope of application for patent item 14, the graded coating layer includes AlxInyGa ^ x-yN, of which 0 $ xS 1 and 0 $ 1. 16. —A hybrid semiconductor device that grows along a vertical crystalline pole, comprising: a plurality of crystalline layers whose material composition changes along the direction of the pole; at least one of the layers has a graded component that generates a space charge exceeding a volume of the grade to The dopant is allowed to precipitate from the adjacent layer exogenously. 17. As for the device under the scope of the patent application, the hierarchical layer includes AlxInyGar X · yN, where OSx ^ l and O ^ ySl. 18. —A hybrid semiconductor device growing along each vertical crystalline pole, comprising: a plurality of crystalline layers whose material composition changes along the direction of the pole to generate a polarization induced electric field in at least one of the layers; one of the layers The composition includes an active region that is graded to generate a quasi-electric field to resist the polarization-induced electric field. 19. The device according to item 18 of the scope of patent application, wherein the level generates a band elevation rate of the active region to generate the quasi electric field. 20. For the device in the scope of application for patent No. 18, the active area includes AUIiiyGamN, of which 0 $ xS 1 and OS yS 1. 21. A hybrid semiconductor device growing along each vertical crystalline pole, comprising: a plurality of crystalline layers whose material composition changes along the direction of the pole to generate a polarization-induced charge concentrated on at least one of the layers; at least the layers One of the combined dopant impurities is ionized to a state of charge that is at least opposite to one of the charge concentrations. -25- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 裝 49727( 5 A B c D 六、申請專利範圍 22. —種沿垂直結晶極方各生長之混合半導體裝置，包含： 一結晶具有一極方向；及 複數個結晶層其材料成分沿該極方向變化以產生一極 化感應電場於至少該數層之一層； 至少該數層之一具有一極***替的原子次序，即至少 該數層之一層的該極化感應電場電的方向反轉。 23. —種沿垂直結晶極方各生長之混合半導體裝置，包含： 一結晶具有一極方向；及 至少各p型及η型結晶層之一其材料成分沿該極方向變 化以產生一極化感應電荷集中於至少該數層之一層； 該ρ型層的生長次序在該η型層之前以反抗該電荷集中 對該裝置性能的影響。 24. —種沿垂直結晶極方各生長之混合半導體裝置，包含： 複數個結晶層其材料成分沿該極方向變化以產生一極 化感應電場於至少該數層之一層； 該數層之一包含交替的光發射及非發射層，利用該非 發射層限制發射層内的發射載體及反抗該電場。 25. 如申請專利範圍第24項之裝置，其中至少該非發射層 之一的材料成分分級以產生一准電場反抗該電場。 26. 如申請專利範圍第24項之裝置，其中至少該發射層之 一的材料成分分級以產生一准電場反抗該電場。 27. 如申請專利範圍第26項之裝置，其中至少該非發射層 之一的材料成分分級以產生一准電場反抗該電場。 28. 如申請專利範圍第24項之裝置，其中至少該非發射層 -26- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)49497 (5 AB c D 6. Application scope 22. A hybrid semiconductor device that grows along the vertical crystal poles, including: a crystal with a pole direction; and a plurality of crystal layers whose material composition changes along the pole direction To generate a polarization induced electric field in at least one of the layers; at least one of the layers has an atomic order with alternating polarities, that is, the direction of the polarization induced electric field in at least one of the layers is reversed. -A hybrid semiconductor device that grows along each vertical crystalline pole, including: a crystal having a pole direction; and at least one of each of the p-type and n-type crystalline layers whose material composition changes along the pole direction to generate a polarization-induced charge Focus on at least one of the layers; the growth order of the p-type layer before the n-type layer resists the effect of the charge concentration on the performance of the device. 24.-a hybrid semiconductor device that grows along each of the vertical crystalline poles, Containing: a plurality of crystalline layers whose material composition changes along the polar direction to generate a polarization induced electric field in at least one of the layers; one of the layers includes alternating Emissive and non-emissive layers, using the non-emissive layer to limit the emission carrier within the emissive layer and resist the electric field. 25. For example, the device in the scope of patent application No. 24, wherein the material composition of at least one of the non-emissive layers is graded to generate a quasi-electric field Resist the electric field. 26. If the device of the scope of the patent application is applied for, the material composition of at least one of the emitting layers is graded to generate a quasi electric field to resist the electric field. The material composition of one of the non-emissive layers is graded to generate a quasi-electric field that resists the electric field. 28. For the device in the scope of application for patent No. 24, at least the non-emissive layer is -26- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) 497276 A8 B8 C8 D8 六、申請專利範圍 之一包含摻染劑轉質以提供空間電荷，即反抗該電 場。 29. —種混合半導體裝置，包含： 一結晶具有一極方向，及 複數個結晶層其材料成分沿該極方向變化以產生一極 化感應電場於至少該數層之一層； 至少該數層之一為一活性區； 該數層之一，低於該活性區，至少部份釋放應變導致 低於活性區的該層的平面内結晶格常數接近無應變活 性區材料的平面内結晶格常數，因而減少，消除或反 相該活性區内的該電場。 30. —種混合半導體裝置，包含： 一結晶具有一極方向；及 複數個結晶層其材料成分沿該極方向變化以產生一極 化感應電場於至少該數層之一層； 至少該數層之一為一活性區； 該活性區生長致使該裝置内的材料至少部份釋放應 變，因而減少至少活性區内的該電場。 -27- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)497276 A8 B8 C8 D8 VI. One of the scope of patent application includes the transformation of dopant to provide space charge, which is to resist the electric field. 29. A hybrid semiconductor device comprising: a crystal having a pole direction, and a plurality of crystal layers whose material composition changes along the pole direction to generate a polarization induced electric field in at least one of the layers; at least one of the layers One is an active region; one of the layers is lower than the active region, and at least part of the strain is released causes the crystal lattice constant in the plane of the layer lower than the active region to approach the crystal lattice constant in the plane of the unstrained active region material, This reduces, eliminates or reverses the electric field in the active region. 30. A hybrid semiconductor device comprising: a crystal having a pole direction; and a plurality of crystal layers whose material composition changes along the pole direction to generate a polarization induced electric field in at least one of the layers; at least one of the layers One is an active region; the growth of the active region causes the material in the device to release strain at least partially, thereby reducing the electric field in at least the active region. -27- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)