TW496812B - Eddy current sensing and optical monitoring for chemical mechanical polishing - Google Patents

Eddy current sensing and optical monitoring for chemical mechanical polishing Download PDF

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Publication number
TW496812B
TW496812B TW090112035A TW90112035A TW496812B TW 496812 B TW496812 B TW 496812B TW 090112035 A TW090112035 A TW 090112035A TW 90112035 A TW90112035 A TW 90112035A TW 496812 B TW496812 B TW 496812B
Authority
TW
Taiwan
Prior art keywords
grinding
substrate
patent application
scope
item
Prior art date
Application number
TW090112035A
Other languages
Chinese (zh)
Inventor
Hiroji Hanawa
Nils Johansson
Boguslaw A Swedek
Manoocher Birang
Fritz C Redeker
Original Assignee
Applied Materials Inc
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Publication date
Priority claimed from US09/574,008 external-priority patent/US6924641B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW496812B publication Critical patent/TW496812B/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.

Description

^j_____________ VJ經濟部智慧財產局員工消費合作社印製 、發明説明（） : 研磨：發明在廣義上說來係關於對基材進行之化學機械 進磨：理。更特定說來’本發明係關於在學機械研磨處理 仃*中對一金屬層加以監視之方法及設備。 積體電路一般都形成在其# 風在暴材之上，即利用將導電 半導體層或絕緣層陸續沉積於矽晶圓之上而形成 其中一道步驟需將一填充層沉積於一不平坦表面 並接著對該填充層加以平坦化直至該不平坦表面暴 舉例來說，-導電填充層可沉積於一經圖案化之絕 緣層上，以將該絕緣層中的溝渠或孔動加以填滿。接著 對該填充層加以研磨，直至該絕緣層之凸出圖案部份暴 出。在平坦化過程完畢之後，該導電層之某些部份仍然 存於該絕緣層圖案上各凸出處之間而形成介電孔、插 及金屬線，其中金屬線所指即為基材上薄膜電路之間 導電路徑。此外，基材表面要加以微影製程時一定要 基材表面加以平坦化處理步驟。 化學機械研磨法是對基材平面加以平坦化之一種 被接受的方法。一般說來，在進行這種平坦化方法時 基材需要由研磨頭支撐住，此時基材露出的一面就可 靠住旋轉之研磨墊或移動之研磨帶，以進行研磨動作 上述之研磨墊可為一標準墊或一含有研磨粒子之研 塾’其中前者具有一耐久粗糙表面，而後者則將研磨 層 之 上 出 塞 的 廣 以 磨 ............1'·裝.........#.........$ (請先閲讀背面之注意事項再場寫本頁) 第2頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 子固定在一封含媒介當中。研磨頭可使其對基材所施之 負重得以受到控制，並因此抵壓住研磨墊。此外，研磨 漿（包含至少一種化學反應試劑）可以分佈在研磨墊之 上，以輔助研磨之進行，其中當研磨墊為標準研磨墊時， 還需要再加入研磨粒子。 但在化學機械研磨中有一大問題存在，那就是研磨 過程何時完成，基材是否已平坦化至所需要的平坦度及 厚度，或是何時才能將所需計畫移除之材料量移除完 畢。導電層膜的過度研磨（材料移除之量太多）會使得電路 阻抗增加，而導電層膜的不足研磨（材料移除之量太少） 又會造成電性短路。基材層起始厚度、研磨漿組成物、 研磨墊條件、研磨墊及基材間的相對速度及基材上的負 重都會對材料的移除速率造成影響，也因此對達到研磨 終點所要的時間造成變動，因此研磨終點的判定不能只 以研磨時間作為判定的依據。 對基材材料從研磨表面加以移除並加以檢視是判定 研磨終點方法之其一。舉例而言，基材可被移送至一度 量衡台，以對基材層之厚度加以測量，如利用一測量儀 測量或以一阻值測量方式為之。若基材不符所需規格， 那麼基材將被再進CMP設備當中，以進行更進一步的處 理，這種耗時工作會降低CMP設備產出速率。此外，檢 視步驟也可能會顯示出過量材料已被磨除，因此基材便 不能再使用。 近期以來，為達到對研磨終點加以偵測的目的，以 第頂 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） ------------J —裝---------t---- $ (請先閲讀背面之注意事項再填寫本頁) 五、發明說明（） (請先閲讀背面之注意事項再填寫本頁) 光或電容感測器等進行之基材同步監視已有使用之。此 外’其它已提出的終點偵測技術還包含磨擦力測量、馬 達電流測量、研磨漿化學物質測量、聲波測量及導電性 測置等，而在金屬層中感生一旋流並測量旋流在金屬層 被移除時的改變即為其中一種曾被考慮使用的技術。 在研磨一填充層以暴出一底層所進行的CMP處理步 驟中’另一時常發生的問題便是基材表面的碟形現象。 更特定說來，一旦底層暴出時，位於底層圖案之凸出區 域之間的填充層部份就會被過度研磨，於是形成基材表 面上的凹處。這種碟形現象會讓基材不適於再製造積體 電路於其上，良率也就因此降低。 tii目的及概述： 就一樣態言，本發明係關於一種監視一基材中之導 電層的感測器，其中該感測器有一軸心、一第一線圈、 經濟部智慧財產局員工消費合作社印製 一振盪器及一第二線圈，其中該軸心可位於靠近基材之 處；該第一線圈纏繞於該軸心之第一部份上；該振盘器 電性耦合至該第一線圈，以在該第一線圈内感生一交變 電流，並在靠近基材處產生一交變磁場；而該第二線圈 纏繞於該軸心之第二部份上。此外，一電容電性轉人至 該第二線圈，而一放大器則電性耦合至該第二線圈及該 電容，以產生一輸出訊號。 本發明實施時包含有下列特徵之一或多者。當基材 不靠近軸心時，振盪器感生之交變電流的頻率可選擇為 第4頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) ^ ^ ~ ----^ 496812 A7 -------B7 ___ 五、發明說明（） 一共振頻率。軸蕊在本質上可為亞鐵鹽所製成者，並可 匕S兩分支及該兩分支間的一連接部份。第一線圈可纏 繞該連接部份，而第二線圈可至少纏繞在該兩分支之一 者上。第二線圈及電容可加以並聯。感測器可位於基材 對面之一研磨墊之一側上。研磨墊可包含一上層及一下 層’而一孔可形成於靠近該轴心之該下層的至少一部份 中。一電腦可加以使用，用以接收輸出訊號。 在另一樣態中，本發明係關於一種化學機械研磨設 備。該設備包含一研磨墊、一研磨頭、一旋流感測器及 一馬達，其中該研磨頭用以握住一基材、並使該基材抵 住研磨表面的第一侧，而該馬達則耦合至該研磨及該研 磨頭之至少一者，以使上述兩者間能形成相對運動。該 感測器包含至少一電感、一振盪器及一電容，其中該感 測器位於基材對面之研磨墊的第二側上；該振盪器則電 性耦合至該至少一電感處，以在該線圈中感生一交變電 流’並產生一交變磁場；而該電容則電性耦合至該至少 一電感處。 -------------------------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 平檯測至一 一側 1 平感該。含一 α 該置在樣包第 者於位以取可之 多置 一 用行墊塾 或可而則進磨磨 一感，器 器研研 之電轉制測該該 徵一旋控感。I 特少可 一流内i 列至檯，旋側 h 下該平置該二 Η5Μ 有而該位對第前 節 具， 。角時之中 可墊中之鄰墊其 時磨處檯相磨 ’ 施研凹平材研層 實該一該基該撐 在撐的定該於支 明支面決與成 一 發以表以感形及 本 用頂用 電可層 可一可 一處覆 檯之器少凹毯 本紙張尺度適用中國國家標準(CNS)A4規格(210χ 297公爱) 496812 Α7 Β7 五、發明説明（ 上，而後者 處可因移除 包含一轴心 之凹處相鄰 份上。該漩 則位於該研 該支撐層的 ，該軸心具 ，而該至少 流感測器可 包含一第一電感及一第 的第一部份 該振盪器可 感生一交變 振盪器可感 該交變電流 可育餅從該 統可在輸出 達到的訊號 在另一 金屬層在進 上，而後者 電性耦合至 電流β該電 生一交變電 的頻率可選 漩流感測器 磨墊之第二 部份而形成 有兩極，該 —電感則纏 包含一軸心 二電感，其 貝1J纏繞於該 該第一線圈 容可電性耦 流’其中在 擇為共振頻 接收一輸出 側上’ 之。該 兩極則 繞於該 ，而該 中前者 轴心之 ，以在 合至該 其中上 旋流感 與該研 軸心之 至少一 纏繞於 第二部 該第一 訊號超出一預定臨界值 第二線 基材不靠近軸 率。一終點偵 訊號。該終點 時發出一研磨 述之凹 測器可 磨墊中 第一部 電感可 該轴心 份上。 線圈中 圈。該心時， 測系統 偵測系 終點已 樣態中，本 行研磨動作 經濟部智慧財產局員工消費合作社印製 一基材被置 由一位於該 生之。該磁 漩流，其中 受到偵測。 本發明在實施時可 一線圈可由一具第一頻 不靠近該磁場時，該第 於一研磨表 基材對面之 場延伸通過 交變磁場因 發明係關於一種監視一基材之一 時之厚度的方法。在該方法中， 面之第一側上，而一交變磁場則 研磨表面的第二側上的一電感產 該研磨表面而在該導電層中感生 該導電層厚度的改變而改變者會 包含下列特徵之一或多者。一第 率之振盪器驅動之，其中在基材 一頻率可為一共振頻率❶該交變 第6頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ...........r :壯衣.........、玎.........^ (請先閲讀背面之注意事項再填寫本頁) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 磁場可以一第二線圈加以感測。該第二線圈可與一電容 並聯。該第一線圈可纏繞在一轴心之第一部份上，而該 第二線圈可纏繞在該軸心之第二部份上。電感何時與基 材相鄰可被決定出來。該電感可以一第一訊號驅動之， 而第二訊號可由該交變電場產生之。該第二訊號之振幅 改變改變量得以決定出來，且該第一訊號及該第二訊號 之間的新位差也可被決定出來。 在另一樣態中。本發明係關於一種化學機械研磨之 方法。在該方法中，.一具有一導電層之基材被置於一研 磨表面之第一側上。一交變磁場為一點感所產生之，其 中該電場位於該基材對面之研磨表面的第二側上。該磁 場延伸通過該研磨表面而在該導電層中感生旋流。基材 與研磨表面之間存有相對移動，用以研磨該導電層。該 基材中的漩流得以被感測，且在該感測得之旋流值顯示 為一終點臨界指示時停止研磨動作。 在另一樣態中’本發明係關於一種化學機械研磨設 備。該設備具有一具一研磨表面之研磨塾、一研磨頭、 一馬達及一導電層厚度監視系統，其中該研磨頭用以將 握住一基材並使之抵住該研磨表面，該馬達耦合至該研 磨墊及研磨頭之至少一者，以在該兩者之間產生相對移 動行為。該導電層厚度監視系統包含至少一電感、一電 流源、感測電路及相位比較電路，其中該電流源產生一 驅動訊號’並電性搞合至該至少一電感，以在該至少·一 電感中感生一交變電流，並產生一交變磁場；該感測電 第7頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公楚） ............i.........t—.....^ (請先閲讀背面之注意事項再填寫本頁) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 路包含一電容，該電容電性耦合至該至少一電感以感測 該交變電場，並產生一感測訊號，而該相位比較電路耦 合至該電流源及該感測電路，以量測該感測訊號及該驅 動訊號間的相位差。 本發明在實施時可包含下列特徵之一或多者。至少 一第一閘（如一 XOR閘）可將電感及振盪器之弦波訊號轉 緩成第一及第二方波訊號。一比較器（如一 XOR閘）可對 該第一方波訊號及該第二方波訊號加以比較，因二產生 一第三方波訊號。一濾波器可將該第三方波訊號轉燕成 一差動訊號，其中該差動訊號的振幅正比於該第一及第 二方波訊號間之相位差。此外，該相位比較電路可產生 一工作週期正比於該相位差之訊號。 在另一樣態中，本發明係關於一種監視一基材之一 導電層在進行一化學機械研磨動作時之候度的方法。在 該方法中，一線圈被加以第一訊號而帶有能量，以產生 一交變磁場，該交變時場被量測，並有一指出該磁場大 小之第二訊號被產生。此外，該第一及第二訊號被加以 比較以決定該兩者之間的相位差。 在另一樣態中，本發明係關於一種化學機械研磨設 備。該設備中具有一研磨墊、一研磨頭、一漩流監視系 統、一光學監視系統、一控制器及一馬達，其中該研磨 頭握住一基材並使之抵住該研磨表面之第一側；該旋流 監視系統之位置設計以能在鄰近該基材處產生一交變磁 場為原則；該光學監測系統能產生一光束，並可對基材 第8頁^ j _____________ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the description of the invention (): Grinding: The invention in a broad sense is about chemical mechanical grinding of substrates: reason. More specifically, the present invention relates to a method and apparatus for monitoring a metal layer in a mechanical polishing process. Integrated circuits are generally formed on the wind material, that is, a conductive semiconductor layer or an insulating layer is sequentially deposited on a silicon wafer to form one of the steps. A filling layer is deposited on an uneven surface and The filling layer is then planarized until the uneven surface is exposed. For example, a conductive filling layer can be deposited on a patterned insulating layer to fill the trenches or holes in the insulating layer. Then, the filling layer is ground until the protruding pattern portion of the insulating layer is exposed. After the flattening process is completed, some parts of the conductive layer still exist between the protrusions on the insulating layer pattern to form dielectric holes, plugs and metal wires, where the metal wires refer to the film on the substrate Conductive path between circuits. In addition, the substrate surface must be flattened when the lithography process is performed. Chemical mechanical polishing is an accepted method for flattening the surface of a substrate. Generally speaking, the substrate needs to be supported by the polishing head when performing this flattening method. At this time, the exposed side of the substrate can reliably hold the rotating polishing pad or the moving polishing belt to perform the polishing operation. It is a standard pad or a grind containing abrasive particles. The former has a durable rough surface, while the latter grinds the plugs on the abrasive layer ......... ......... # ......... $ (Please read the notes on the back before writing this page) Page 2 This paper size applies to China National Standard (CNS) A4 specifications ( 210X297 mm) 496812 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The description of the invention () is fixed in a piece of media. The abrasive head allows its load on the substrate to be controlled and therefore presses against the abrasive pad. In addition, the polishing slurry (containing at least one chemical reaction reagent) can be distributed on the polishing pad to assist in the grinding. Where the polishing pad is a standard polishing pad, it is necessary to further add abrasive particles. However, there is a major problem in chemical mechanical polishing, that is, when the polishing process is completed, whether the substrate has been planarized to the required flatness and thickness, or when the amount of material required to be removed can be removed. . Excessive grinding of the conductive layer film (too much material removed) will increase the circuit impedance, and insufficient grinding of the conductive layer film (too little material removal) will cause an electrical short circuit. The initial thickness of the substrate layer, the composition of the polishing slurry, the conditions of the polishing pad, the relative speed between the polishing pad and the substrate, and the load on the substrate will affect the removal rate of the material and therefore the time required to reach the end of the polishing Because of the change, the determination of the polishing end point cannot be based on the polishing time alone. One of the methods to determine the end point of grinding is to remove and inspect the substrate material from the grinding surface. For example, the substrate can be transferred to a one-degree weighing platform to measure the thickness of the substrate layer, such as using a measuring instrument or a resistance measurement method. If the substrate does not meet the required specifications, the substrate will be reintroduced into the CMP equipment for further processing. This time-consuming work will reduce the output rate of the CMP equipment. In addition, inspection procedures may show that excess material has been abraded and the substrate can no longer be used. Recently, in order to achieve the purpose of detecting the end point of grinding, the first paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ------------ J — 装- -------- t ---- $ (Please read the precautions on the back before filling out this page) 5. Description of the invention () (Please read the precautions on the back before filling out this page) Optical or capacitive sensing Synchronous monitoring of substrates by measuring devices, etc. has been used. In addition, 'other proposed endpoint detection technologies also include friction force measurement, motor current measurement, slurry chemical measurement, acoustic measurement, and conductivity measurement, etc., and a swirl is induced in the metal layer and the swirl is measured. The change when the metal layer is removed is one of the technologies that was considered. Another problem that often occurs in the CMP process step of grinding a filling layer to expose a bottom layer is the dishing phenomenon on the surface of the substrate. More specifically, once the underlayer is exposed, the portion of the filling layer located between the protruding areas of the underlayer pattern is excessively ground, thereby forming a recess on the surface of the substrate. This dish-shaped phenomenon makes the substrate unsuitable for remanufacturing the integrated circuit thereon, and thus the yield is reduced. tii Purpose and summary: In the same statement, the present invention relates to a sensor for monitoring a conductive layer in a substrate, wherein the sensor has an axis, a first coil, and an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. An oscillator and a second coil are printed, wherein the axis can be located near the substrate; the first coil is wound on a first portion of the axis; the vibrator is electrically coupled to the first A coil to induce an alternating current in the first coil and generate an alternating magnetic field near the substrate; and the second coil is wound on a second portion of the shaft center. In addition, a capacitor is electrically transferred to the second coil, and an amplifier is electrically coupled to the second coil and the capacitor to generate an output signal. The practice of the present invention includes one or more of the following features. When the substrate is not close to the axis, the frequency of the alternating current induced by the oscillator can be selected on page 4. This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) ^ ^ ~ ---- ^ 496812 A7 ------- B7 ___ V. Description of the invention () A resonance frequency. The shaft core can be made of ferrous salt in nature, and can be used for two branches and a connecting part between the two branches. The first coil may be wound around the connection portion, and the second coil may be wound on at least one of the two branches. The second coil and capacitor can be connected in parallel. The sensor may be located on one side of an abrasive pad opposite the substrate. The polishing pad may include an upper layer and a lower layer 'and a hole may be formed in at least a portion of the lower layer near the axis. A computer can be used to receive output signals. In another aspect, the invention relates to a chemical mechanical polishing apparatus. The device includes a polishing pad, a polishing head, a flu detector, and a motor, wherein the polishing head is used to hold a substrate and to hold the substrate against the first side of the polishing surface, and the motor is Coupled to at least one of the grinding and the grinding head so that a relative movement can be formed between the two. The sensor includes at least an inductor, an oscillator, and a capacitor, wherein the sensor is located on the second side of the polishing pad opposite the substrate; the oscillator is electrically coupled to the at least one inductor to An alternating current 'is induced in the coil and an alternating magnetic field is generated; and the capacitor is electrically coupled to the at least one inductor. ------------------------- ^ (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Taiwan measured to one side 1 feel flat. Contains an α, which should be placed in the first place of the sample package to obtain as many as possible. Use a pad or may be used to grind a sense, and the electrical research of the instrument research should measure the sense of a spin. I especially can be in the first row from the i row to the platform, and the side is placed horizontally with the 2M 5M, and the position is opposite the first section. In the corner, the adjacent pads can be ground at the same time. The ground is ground and the ground is ground. The Shiyan concave flat material is ground to realize the foundation, the support, the support, the support, and the support. Forming and using the top electrical layer can be one can be covered by a device with less concave blanket. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 public love) 496812 Α7 Β7 5. Description of the invention (above, and The latter can be removed by removing the adjacent part containing a central axis. The spiral is located on the support layer, the central axis, and the at least flu detector can include a first inductor and a first The first part of the oscillator can induce an alternating oscillator that can sense the alternating current fertile cake. The signal that can be reached at the output of the system is on another metal layer, and the latter is electrically coupled to the current β. The frequency of the alternating current and the alternating current can be selected to form the second part of the second part of the polishing pad of the flu detector. The inductor is wound and includes an axis and two inductors, and its shell is wound around the first coil. Can be electrically coupled 'where the resonant frequency is selected on an output side'. The two poles The axis of the former is wound around the axis of the former, so that at least one of the flu and the axis of the research center is wound around the second part. The first signal exceeds a predetermined threshold. The second line substrate is not close to it. Axial rate. An end point detection signal. When the end point is issued, the first inductor in the grindable pad of the grinder can be placed on the center of the axis. The coil is in the center. In the state, the grinding action of the Bank ’s consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a substrate placed on the surface. The magnetic vortex is detected. The invention can be implemented by a coil When the first frequency is not close to the magnetic field, the field on the opposite side of a ground surface substrate extends through an alternating magnetic field. The invention relates to a method for monitoring the thickness of one of the substrates. In this method, the first surface An alternating magnetic field produces an abrasive on the second side of the abrasive surface and induces a change in the thickness of the conductive layer in the conductive layer. The change may include one or more of the following characteristics. The second rate is driven by an oscillator, in which a frequency can be a resonance frequency in the substrate. The paper page 6 applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ... .... r: Zhuangyi ........., 玎 ......... ^ (Please read the precautions on the back before filling out this page) 496812 Employees' Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed A7 B7 V. Description of the invention () The magnetic field can be sensed by a second coil. The second coil can be connected in parallel with a capacitor. The first coil can be wound on the first part of an axis, and the A second coil can be wound on the second part of the shaft center. When the inductor is adjacent to the substrate can be determined. The inductor can be driven by a first signal and a second signal can be generated by the alternating electric field. The amount of change in amplitude of the second signal can be determined, and a new bit difference between the first signal and the second signal can also be determined. In another aspect. The present invention relates to a method for chemical mechanical polishing. In this method, a substrate having a conductive layer is placed on a first side of an abrasive surface. An alternating magnetic field is generated by a little sense, wherein the electric field is located on the second side of the abrasive surface opposite the substrate. The magnetic field extends through the abrasive surface to induce a swirling current in the conductive layer. There is a relative movement between the substrate and the grinding surface for grinding the conductive layer. The swirling current in the substrate is sensed, and the grinding operation is stopped when the sensed swirling value is displayed as an end point critical indicator. In another aspect, the invention relates to a chemical mechanical polishing apparatus. The device has a grinding pad with a grinding surface, a grinding head, a motor, and a conductive layer thickness monitoring system, wherein the grinding head is used to hold a substrate against the grinding surface, and the motor is coupled To at least one of the polishing pad and the polishing head to generate a relative movement behavior between the two. The conductive layer thickness monitoring system includes at least one inductor, a current source, a sensing circuit, and a phase comparison circuit. The current source generates a driving signal and is electrically coupled to the at least one inductor, so that the at least one inductor The medium current generates an alternating current and generates an alternating magnetic field. The paper size of the sensing electricity is applicable to the Chinese National Standard (CNS) A4 specification (210x297) on page 7 ........... .i ......... t —..... ^ (Please read the notes on the back before filling out this page) 496812 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description ( The circuit includes a capacitor, which is electrically coupled to the at least one inductor to sense the alternating electric field and generate a sensing signal. The phase comparison circuit is coupled to the current source and the sensing circuit. Measure the phase difference between the sensing signal and the driving signal. The invention, when implemented, may include one or more of the following features. At least one first gate (such as an XOR gate) can slow the inductor and oscillator sine wave signals into first and second square wave signals. A comparator (such as an XOR gate) can compare the first-party wave signal and the second-party wave signal, because a second-party wave signal is generated. A filter can convert the third-party wave signal into a differential signal, wherein the amplitude of the differential signal is proportional to the phase difference between the first and second square-wave signals. In addition, the phase comparison circuit can generate a signal with a duty cycle proportional to the phase difference. In another aspect, the present invention relates to a method for monitoring the temperature of a conductive layer of a substrate during a chemical mechanical polishing operation. In this method, a coil is energized with a first signal to generate an alternating magnetic field, the alternating time field is measured, and a second signal indicating the magnitude of the magnetic field is generated. In addition, the first and second signals are compared to determine the phase difference between the two. In another aspect, the invention relates to a chemical mechanical polishing apparatus. The device has a polishing pad, a polishing head, a vortex monitoring system, an optical monitoring system, a controller, and a motor, wherein the polishing head holds a substrate and makes it abut against the first of the polishing surface. The position design of the swirl monitoring system is based on the principle that an alternating magnetic field can be generated near the substrate; the optical monitoring system can generate a light beam and can be applied to the substrate.

本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 496812 Α7 Β7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 反射回之光束加以偵測；該控制器用以接收來自該旋流 監視系統及該光學監視系統之訊號；而該馬達耦合至該 研磨電及該研磨頭之至少一者，用以在該兩者之間產生 相對移動行為β 本發明在實施時可包含下列特徵之一或多者。該漩 流監視系統可包含一電感，其中該電感位於該基材對面 之研磨墊的第二側上。該電感可位於該研磨墊下方之平 檯的第一腔中。該光學監視系統可包含一光源及一光真 測器，其中該光偵射器位於該基材對面之研磨墊的第二 側上。該光源及光偵測器可位於該研磨墊下方之平檯的 第一腔中，或也可位於第二腔中。該旋流監視系統及該 光學監視系統的位置可設計成能使該兩者監視基材上大 致相同之徑向位置。該控器可設計用以偵測該漩流監視 系統及該光學監視系統所發出之訊號中的終點臨界指 示。 經濟部智慧財產局員工消費合作社印製 在另一樣態中，本發明係關於一種化學機械研磨方 法。在該方法中，一基材位於一研磨表面之第一側上， 其中該基材與該研磨表面之間存有相對移動行為，以對 基材加以研磨。一第一訊號由一漩流監視系統產生，而 一第二訊號為一光學監視系統產生。該第一及第二訊號 都被加以監視，以得到終點臨界指示。 本發明在實施時可包含下列特徵之一或多者❶研磨 可在終點臨界由該第一及第二訊號被偵測出時停止，或 在終點臨界由該第一或第二訊號偵測出時停止。基材可 第9頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) A7 B7 496812 五、發明説明（） 包含一金屬，而監視步驟可包含監視漩流監視系統之訊 號直至金屬層抵達一預定厚度、並隨後監視光監視系統 &訊號的步驟。 在另一樣態中，本發明係關於一種化學機械研磨方 式研磨一基材上之一金屬層的方法。該基材在一第一研 磨台處研磨’其中該第一研磨台具有一基材研磨表面， 旅具有第一研磨速率。在第一研磨台上之研磨動作爺一 漩流監視系統監視之，而基材在該旋流監視系統指出基 材上的金屬層厚度為一預定值時被送至一第二研磨台。 基材接著在第二研磨台進行研磨，該第二研磨台具有一 第二研磨表面，並具有第二研磨速率，其中該第二研磨 速率小於該第一研磨速率。在第二研磨台進行之研磨動 作由一光學監視系統監視之，研磨動作則在該光學監視 系統指出一第一底層至少部份暴出時停止。 本發明在實施時可包含下列特徵之一或多者。第一 底層可為一阻障層。該基材可被送至一第三研磨台，並 以其第三研磨表面研磨之。第三研磨台上的研磨動作可 由一第二光學監視系統監視之，而研磨動作可在該光學 監視系統指出一第二底層至少部份暴出時停止。在該第 三研磨台之研磨動作可以繼續進行直至該第一底層大致 完全暴出。在第三研磨台進行之研磨動作可包含研磨在 起始時較之後有較高壓力條件的步驟。 在另-樣態中’本發明係關於-種化學機械研磨一 基材上一金屬層的方法。該基材在— 术一研磨上研磨 第10頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) :-裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 之，該第一研磨台具有一第一研磨表面，並具有第一研 磨速率。在第一研磨台上之研磨動作由一漩流監視系統 監視之，而研磨速率在該漩流監視系統指出基材上之金 屬層的厚度為一預定值時降低之。在該第一研磨台之研 磨動作由一光學監視系統監視之，研磨動作在該光學監 視系統指出一第一底層至少部份暴出時停止。 本發明在實施時可包含下列特徵之一或多者。該第 一底層可為一阻障層。該基材可被轉送至一第二研磨 台’並以一第二研磨表面研磨之。在該第二研磨台上的 研磨動作可由一第二光學監視系統監視之，而研磨動作 可在該第二光學監視系統指出一第二底層至少部份暴出 時停止。該基材可被轉送至一第三研磨台，並以一光滑 表面光滑之。在第二研磨台上的研磨動作可繼續進行直 至該第一底層大至上完全暴出。 在另一樣態中，本發明係關於一種以化學機械研磨 方式研磨一基材上之一金屬層的方法，其中該基材以第 一速率研磨。研磨的進行係以一旋流監視系統監視之， 而研磨速率在該旋流監視系統指出該基材上剩下之金屬 層厚度為一預定值時降低之。研磨的進行係以一光學監 視系統監視之，而研磨動作在該光學監視系統指出一底 層至少部份暴出時停止。 本發明在實施時所可能具有的優點包含下列特徵之 一或多者。在金屬層研磨時，研磨頭所施以之壓力分佈 可加以調整，以補償送進之基材的不均勻研磨速率及不 第11頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------------- I I ^---------^---------^ (請先閲讀背面之注意事項再填寫本頁) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 均勻厚度。此外，研磨監視系統可同步感測一金屬層之 研磨終點。再者，研磨監視系統可決定研磨設備當切換 研磨參數之時間點。舉例而言，研磨監視系統可在一金 屬層的研磨終點抵達之前用以觸發使一研磨速率下降。 研磨可在很準確的時間點上停止。過度研磨及不足研磨 情形可以減少，碟形及腐蝕程度亦可降低，因此良率及 產速得以提升。 本發明之其它特徵及優點在詳閱以下之描述及圖式 與申請利範圍之後將變得更加易懂。 圖式簡單說明： 第1圖為一化學機械研磨設備前視剖面示意圖。 第2圖為一研磨頭之一剖面示意圖。 第3 A圖為一化學機械研磨台之側視、部份剖面示意圖， 其包含一漩流監視系統及一光學監視系統。 第3B圖為第3A圖之研磨台之平檯的上視示意圖。 第4圖為該旋流監視系統之電路示意圖。 第5圖為該旋流監視系統所產生之磁場的剖面示意圖。 第6圖為一旋流感測器之一軸心的前視示意圖。 第7A-7D圖為一種利用一旋流感測器偵測一研磨終點之 方法的示意說明圖。 第8圖為該旋流監視系統所得到的振幅曲線圖。 第9A-9C圖旋流監視系統之電路示意圖。 第1 0圖為該漩流監視系統所得到的相位移曲線圖。 第12頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） i — — — — — — — — — — 111 — — — — — — — — — — 丨 — — — — — — — — (請先閲讀背面之注意事項再填寫本頁) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 第11圖為該光學監視系統所得到的振幅曲線圖。 第12圖為一種研磨一金屬層之方法流程圖。 第13圖為令一種研磨一金屬層之方法流程圖。 第1 4圖為一化學機械研磨台的側視、部份剖面示意圖， 其中包含一旋流監視系統。 第15 A-15B圖為一研磨墊之剖面示意圖。 圖號對照說明： 10 基材 12 金屬層 14 底層（絕緣層） 16 導電層 16’ 内連接 18 阻障層 20 化學機械研磨研磨設備 22,22a,22b,22c 研磨台 23 轉送台 24 平檯 25 中心軸 26 凹處（孔洞） 28 墊調節設備 29 集電體 30 雙層研磨墊 32 支撐層 32’ 支撐層 32，， 支撐層 335 支撐層之部份 3 3，， 支撐層及毯覆層的部份 34 毯覆層 34，， 毯覆層 36 透明部份（視窗） 36, 研磨墊之部份 36?, 薄墊之部份 38 研磨漿 39 漿/清洗劑提供臂 40 旋流監視系統 42 軸心 42a,42b 極 第1頂 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------------^ —裝---------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 496812 η 經濟部智慧財產局員工消費合作社印製 Α7 ____ Β7 ____·-* ------ 、發明説明（） 44 驅動線圈 46 感測線圈 48 驅動系統 50 振盪器 52 電容 54 射頻放大器 56 二極體 58 感測系統（電路） 60 可旋轉多頭旋轉座 62 中央柱 64 旋轉轴 66 旋轉座支撐板 68 蓋件 70 研磨頭 71 中心軸 72 輻射向槽 74 研磨頭驅動柄 76 研磨頭旋轉馬達 80 位置感測器 82 旗狀物 90 電腦 92 輸出裝置 94 相位移感測器 96 採樣區域 100 反或閘 102 反或閘 104 第三反或閘 106 濾波器 140 光學監視系統 142 光束 142 底層經圖案話之部份 144 光源 146 偵測器 200 研磨頭 202 殼體 204 基體組件 206 平衡機構 208 負載腔室 210 固定環 212 基材支撐組件 216 柔性内部膜 218 柔性外部膜 220 内部支撐結構 222 内部隔距環 230 外部支撐結構 232 通道 234 浮置上腔室 236 浮置下腔、室 第14頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812 A7 B7 五 經濟部智慧財產局員工消費合作社印製 、發明說明（ 238 外腔室 244 内部翼 246 外部翼 說明：_ 請參閱第1圖。圖中之一握多片基材10可以一化學 機械研磨（CMP)設備20研磨之。一類似於該研磨設備2〇 者可見於美國專利5，738,574之說明内容，其被併入本案 中以供參考。研磨設備20包含一系列的研磨台22a，22b 及22c與一轉送台23,其中後者將基材轉送於研磨頭及一 負載設備之間。 每一研磨台包含一可旋轉平檯24，平檯24上則有一 研磨墊40。第一及第二研磨台22a及22b可包含一雙層研 磨墊或一具有研磨粒子之墊，該研磨墊具有一堅硬耐磨之 外表面。最終研磨頭22c可包含一相對柔軟之墊或一雙層 墊。此外，每一研磨台還可包含一墊調節設備2 8，以使能 維持研磨墊之表面條件而有效對基材進行研磨動作。 請參閱第3A圖。一雙層研磨墊30典型上具有一支撐 層32及一毯覆層34，其中該層32與平檯24表面相接， 該層34則用以研磨基材10，且後者在典型上較前者硬度 為大。不過，某些研磨塾卻只有一毯覆層而無支撑層。毯 覆層34可由泡沫或澆鑄聚胺酯形成，其中還可加以填充 劑，如中空之微圓體及或/ 一沮凹溝表面。支撐層32可由 以胺基曱酸酯漂白之壓縮毛纖維形成之。此種雙層墊之例 可為Delaware之Rodel公司所製者，其毯覆層為IC-1000 第15頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) ------------1丨裝---------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 所形成’而支撐層則為SUB A-4所形成（1C-1000與SUB A-4 皆為Rodel公司之產品名稱）。 在研磨步驟進行中，研磨漿38及一 PH值調整劑（如 氧°盈物研磨時用之氫氧化鉀）可被加至研磨墊3〇表面處， 其中該漿包含有液體（如氧化物研磨時用之解離子水），加 至研磨墊30處之動作則由一漿提供口或漿/清洗劑提供臂 39提供之。若研磨墊30屬於標準研磨墊，那麼漿38也可 為包含研磨粒子（如氧化物研磨用之二氧化矽）者。 凊再參閱第1圖。圖中顯示一可旋轉多頭旋轉座6〇 支標有四個研磨頭70。該旋轉座之一中央柱62繞一旋轉 轴64旋轉，而旋轉之作動者則為一旋轉座馬達組件（未顯 示），如此研磨頭系統及與其接附之基材於是被固定在研 磨台22及轉送台23之間移動。研磨頭系統之三者接收並 固定住基材，並將之抵壓靠住研磨塾而進行研磨。同時， 研磨頭系統之一者從轉移台23接收一基材或將一基材傳 送至該台23上。 每一研磨頭70都由一研磨頭驅動柄74連接至一研磨 頭方疋轉馬達7 6 (蓋件6 8移開四分之一即可看到），以使每 一研磨頭都可獨立對其軸旋轉。此外，每一研磨頭都 在旋轉座支撐板66内之一輻射向槽72中橫向振盪。一適 用之研磨頭70例可見於美國專利申請案09/470,820及 09/535,575中的說明内容，其揭露之全部内容併入此處， 以供參閱。在實際動作時，平檯繞其中心軸25旋轉，而 研磨頭則繞其中心軸71旋轉，後者並在研磨墊表面上橫 第16頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) " --— -r · *^、* -··* — *·^ (請先閲讀背面之注意事項再填寫本頁) 496812 A7 B7 五、發明説明（） 向移動。 (請先閲讀背面之注意事項再填寫本頁) 一如上述之申請案及第2圖所圖示之研磨頭範例70 包含有一殼體202、一基體組件204、一平衡機構206(可 被視作基體組件204之一部份）、一負載腔室208、一固定 環210及一基材支撐組件212，其包含有三個可加壓腔 室，如浮置上腔室236、浮置下腔室234及一外腔室238。 負載腔室208位於殼體202及基體組件204之間，用以提 供一負重至該基體組件204之垂直部份，並對該垂直部份 進行控制。一第一壓力調節器（未顯示）可以流體可連通之 方式經由一通道232連接至負載腔室208，以控制負載腔 室及基體組件204之垂直位置内的壓力。 經濟部智慧財產局員工消費合作社印製 基材支樓組件2 1 2包含一柔性内部膜2 1 6、一柔性外 部膜2 1 8、一内部支撐結構2 2 0、一外部支撐結構2 3 〇、一 内部隔距環222及一外部隔距環232。該柔性内部膜216 包含一中央部份，該中央部份將壓力加至一可控制區域内 的晶圓1 〇處。基體組件204及為内部翼所密封之内部膜 2 1 6間的空間形成了該可加壓浮置下腔室2 3 4，基體組件 204及為内部翼244與外部翼246所密封之内部膜216間 的環狀空間形成了該可加壓浮置上腔室236 ,内部膜216 及外部膜218間的密封空間則構成一可加壓之外腔室 238。三個壓力調節器（未顯示）可獨立連接至浮置了腔室 234、浮置上腔室236及外腔室238。因此，如氣體等之流 體就可被獨立導進或導出每一腔室。 浮置上腔室236、浮置下腔室234及外腔室23 8之壓 第17頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) " 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 力可聯合對内部膜216靠住外部膜218之一頂表驗的接觸 面積及壓力。舉例而言，當將浮置上腔室2 3 6中的流體抽 離，内部膜2 1 6之邊緣就會被舉離外部膜2丨8，如此就能 降低内部膜及外部膜間之接觸面積的接觸直徑Dc。相反 地，當將流體抽進浮置下腔室234中，内部膜216的邊緣 就忘下靠近外部膜2 1 8，如此就能增加接觸面積之接觸直 徑D c。此外，將流體抽進或抽出浮置下腔室2 3 4時，内 部膜2 1 6對外部膜2 1 8作用壓力就會改變。因此，藉由對 壓力的控制可使得研磨頭所負載之區域的直徑得以受到 控制。 請參閱第3A圖及第3B圖。圖中一凹處26形成在 平檯24中，而一透明部份36則形成於凹處26上之研磨 墊30中。孔洞26及透明部份36的位置設計成能使它們 在平檯旋轉一部份時轉至基材10之下方，並與研磨頭之 移動位置無關。假設研磨墊32為一雙層墊，那麼薄墊的 建構可由將支撐層32之一部份移除及將透明插塞36置入 毯覆層34而達成之。插塞36可為一相對較純的聚合物或 聚亞胺，如不含填充劑者。一般說來，透明部份36的材 料應是非磁性及非導電性者 請續參閱第3A圖及第4圖。圖中，第一研磨台22a 包含有一同部漩流監視系統40及一光學監視系統1 40。該 兩系統4 0及1 4 0的功能就如同一研磨處理控制及終點偵 測系統。第二研磨台22b及最終研磨台22c可皆至包含一 光學監視系統，不過該兩者也都可加以一漩流監視系統。 第18頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） ............. .........t.........^ (請先閲讀背面之注意事項再填寫本頁) 496812 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 漩流監視系統40包含一驅動系統心及一感測系統 58,其中前者用以在基材上之一金屬層中感生旋流，而後 者則用以利用驅動系、统而偵測該金屬層中所感生的旋 流。監視系統40包含一軸心42，其位於凹處26中，用以 隨平檯而旋轉；一驅動線圈40則纏繞於軸心42的一部份 之上；一感測線圈46則纏繞於軸心42之第二部份之上。 為達驅動系統48之目的，監視系統4〇包含一振盪器5〇 , 該振盪器50則連接至驅動線圈44。為達感測系統58之目 的，監視系統40包含一電容52 ;射頻放大器54及一二極 體56，其中該電容52與感測線圈46並聯、該射頻放大器 5 4則連接至感測線圈4 6 ^振盡器5 〇、電容5 2、射頻放大 器54及一極體56可置於與平樓24相隔一距離之處，並 可經由一旋轉集電體29而耦接至平檯之零件上。 請參閱第5圖。圖中所示為振當盪器5〇在作動時會 驅動驅動線圈44而產生一振盪磁場48，該磁場48延伸通 過軸心體42 ’並進入該轴心42兩極42a及42b間的間隙 46。磁場48之至少一部份延伸進入研磨墊3〇之薄部份36 並進入基材10當中。若一金屬層12存在於基材上時， 振盪磁場4 8將會在金屬層1 2中產生旋流，這種旋流則會 形成與感測線圈46及電容52並聯之阻抗源。當金屬層厚 度改變時，其阻抗亦會隨之改變，感應機制之Q因數也因 此改變。利用對該感應機構之Q因數改變量加以偵測，旋 流感測器可以感知漩流強度之改變，金屬層1 2厚度之改 變量也可因此獲知。 第19頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐） ------------丨-裝---------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 496812 Α7 ---____Β7 五、發明説明（） 請參閱第6圖。圖中顯示一線圈42可為一非導電性 之u型體，其具有相對高之導磁率（如約為25〇〇)。更特定 說來，軸〜42可為亞鐵鹽製成。在某一種實施作法中， 兩極42a及42b相距約0 6吋，轴心42深約〇 6吋，而軸 心之剖面外形為邊長約〇 · 2吋之方形。 一般說來，同步漩流監視系統4〇之共振頻率設計成 約為50仟赫茲至1〇百萬赫茲（如2百萬赫茲）。舉例而言， 感測線圈46的電感值可為約〇 3至3〇微亨利，而電 容52之電容值可為淤〇·2至約2〇奈法拉第（nF)。驅動線 圈可設計成能與振盪器送出之驅動訊號相匹配者。舉例而 言，若振盪器具有低電壓及低阻抗，那麼驅動線圈之線圈 數及其提供之電感值就可較小。在另一方面，若振烫器具 有高電壓及高阻抗，那麼驅動線圈就可有較大之線圈數及 較大之電感值。 在一種實施作法中，該感測線圈46的線圈數為9圈， 這9圈都纏繞在軸心之每一分支上；驅動線圈44之線圈 數則為2圈’該兩圈為遶在軸心之基體上；而振盡器驅動 驅動線圈44之振幅約為〇.1伏特至5·〇伏特。此外，在另 一實施作法中，感測線圈46之電感值為約2 · 8微亨利，電 谷52之電谷值約為2.2奈法拉第，而共振頻率則約為2 百萬赫茲。在另一實施作法中，感測線圈之電感值為約3 微了利’電谷52之電谷值約為400微微法拉第。當然， 以上數值僅為範例，實際上這些數值與真正的纏繞樣式、 軸心組成及形狀與電容大小有密切的相關性。 第20頁 本紙張尺度適用中國國家標準(CNS>A4規格(210x297公董) ............. 看 i.........t.........$ (請先閲讀背面之注意事項再填寫本頁) 496812 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（ 一般說纟’所預㈣導體膜厚度愈大則所希望得到之 共振頻率愈低。以一相對齡厘 ^ 相對較厚之膜（如2⑻00埃厚之膜）為 例’這時電容值及電感值可還 电A值j選擇為旎提供相對較小之共振 頻率（如約5^赫兹）者’不過高共振頻率同樣也可適用於 厚銅膜。此外’極高的共振頻率(如2百萬赫茲者)可用以 降低研磨頭中金屬組件之背景雜訊。 請參閱第3A，4及7Affi。在進行研磨之前，振盡器5〇 的頻率被調諧A Lcf路的共振頻率，此時基材並不存 在。該共振頻率可使射頻放大器54之輸出訊號的振幅變 得袅大。 為進行研磨動作，一基材10被置於與研磨墊30機 礎如第7B圖及第8圖所示。基材10可包含一石夕晶圓12 及一導電層16(如一金屬層，如銅層等），其中該兩者位於 一或多經圖案化之底層14之上，其中後者可為半導體、 導體或絕緣體層。一阻障層18(如鈕或氮化鈕）可置於金屬 層及底層介電材料之間。經圖案化之底層可包含金屬特徵 區’如介電孔、墊及内連接線等。在研磨之前，由於塊材 導體層1 6在剛開始時相對較厚且連續者，因此其阻抗低， 也因此該導電層中可產生相當強之漩流。就如以上述及 者’旋流會使金屬層的作用就如同一與感測線圈46及電 容52並聯之阻抗源一般，因此導電層16的存在會降低感 測電路之Q因數，射頻放大器56發出之訊號的振幅也就 因此大大被降低。 請山閱第7C及8圖。當基材10被研磨時，導電層16 第21頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） ............it.........t.........^ (請先閲讀背面之注意事項再填寫本頁) 496812 A7 B7 ^ 發明説明（） 的塊體部份漸漸被薄化。當導電層1 6被薄化，其阻抗值 也就因此增加，其内部之旋流也就受到抑制。因此，金屬 層1 6及感測電路5 8之間的耦合程度降低（即虛擬阻抗源 之阻抗增加）；當耦合程度降低，感應器電路58之Q因數 則往其原始值增加。 . 裝· 訂· 請參閱第7D及8圖。最後，導電層1 6的快體部份被 移除，只留下在經圖案化絕緣層14間之溝渠内的内連接 1 6 ’部份。此時，基材内導電部份（一般都為小區域並為非 連續者）及感測電路5 8間的耦合達到一最小值，感測電路 的Q因數也就因此達到一最大值（不過卻未如基材不存在 時的Q因數之大），故感測電路之輸出訊號振幅達到一高 點值。 線 因此，藉由感射輸出訊號之振幅不再增加並已變得平 坦（如抵達一區域性高點），電腦 90可以感測出一研磨終 點。此外，利用研磨一或多片測試基材之方式，研磨機器 之操作員也可得知輸出訊號振幅與金屬層厚度間之關 係。因此，終點偵測器可在基材上金屬層厚度達到一定點 時停止研磨動作。更特定說來，電腦90在放大器之輸出 訊號超過一電壓臨界值（其與所指定之厚度相對應）時可觸 發表示研磨已至終點。此外，漩流監視系統也可觸發使研 磨參數改變。舉例來說，當監視系統偵測出一研磨臨界點 時，CMP設備可以改變研磨漿之組成（如從高選擇性者轉 變為低選擇性者）。再以另外一例而言，CMP設被可改變 研磨頭所施加的壓力分佈，以下將會進行討論。 第2頂 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) .......... Order ... line (please read the precautions on the back before filling this page) ) 496812 Α7 Β7 V. Description of the invention () (Please read the precautions on the back before filling out this page) The reflected light beam is detected; the controller is used to receive signals from the cyclone monitoring system and the optical monitoring system; The motor is coupled to at least one of the grinding power and the grinding head to generate a relative movement behavior between the two. The invention may include one or more of the following features when implemented. The swirl monitoring system may include an inductor, wherein the inductor is located on a second side of the polishing pad opposite the substrate. The inductor may be located in a first cavity of a platform below the polishing pad. The optical monitoring system may include a light source and a light sensor, wherein the light detector is located on the second side of the polishing pad opposite the substrate. The light source and light detector may be located in the first cavity of the platform under the polishing pad, or may be located in the second cavity. The positions of the swirl monitoring system and the optical monitoring system can be designed to enable the two to monitor substantially the same radial position on the substrate. The controller can be designed to detect the end point critical indication in the signals sent by the swirl monitoring system and the optical monitoring system. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In another aspect, the present invention relates to a chemical mechanical grinding method. In this method, a substrate is located on a first side of a grinding surface, wherein a relative movement behavior exists between the substrate and the grinding surface to grind the substrate. A first signal is generated by a vortex monitoring system, and a second signal is generated by an optical monitoring system. Both the first and second signals are monitored for end-of-threshold indication. The present invention may include one or more of the following features when implemented. Grinding can be stopped when the end point is detected by the first and second signals, or the end point is detected by the first or second signals. Stopped. Substrate can be page 9 This paper size applies Chinese National Standard (CNS) A4 specification (210x297 mm) A7 B7 496812 V. Description of the invention () Contains a metal, and the monitoring step may include monitoring the signal of the vortex monitoring system until the metal The step of the layer reaching a predetermined thickness and then monitoring the light monitoring system & signal. In another aspect, the invention relates to a method for grinding a metal layer on a substrate by a chemical mechanical polishing method. The substrate is ground at a first grinding table ', wherein the first grinding table has a substrate grinding surface and the first grinding rate. The grinding action on the first grinding table is monitored by a swirling flow monitoring system, and the substrate is sent to a second grinding table when the swirling monitoring system indicates that the thickness of the metal layer on the substrate is a predetermined value. The substrate is then ground on a second grinding table having a second grinding surface and a second grinding rate, wherein the second grinding rate is less than the first grinding rate. The grinding operation performed on the second grinding table is monitored by an optical monitoring system, and the grinding operation is stopped when the optical monitoring system indicates that a first bottom layer is at least partially burst. The invention, when implemented, may include one or more of the following features. The first bottom layer may be a barrier layer. The substrate can be sent to a third grinding table and ground with its third grinding surface. The grinding action on the third grinding table can be monitored by a second optical monitoring system, and the grinding action can be stopped when the optical monitoring system indicates that a second bottom layer is at least partially burst. The grinding operation on the third grinding table can be continued until the first bottom layer is almost completely burst. The grinding operation performed at the third grinding table may include a step of grinding at a higher pressure condition at the beginning than later. In another aspect, the invention relates to a method of chemical mechanical polishing a metal layer on a substrate. The substrate is ground on the first grinding process. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm): -......... Order ... .. line (please read the notes on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 496812 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 The polishing table has a first polishing surface and has a first polishing rate. The grinding action on the first grinding table is monitored by a swirl monitoring system, and the grinding rate is reduced when the swirl monitoring system indicates that the thickness of the metal layer on the substrate is a predetermined value. The grinding action at the first grinding table is monitored by an optical monitoring system, and the grinding action is stopped when the optical monitoring system indicates that a first bottom layer is at least partially exposed. The invention, when implemented, may include one or more of the following features. The first bottom layer may be a barrier layer. The substrate can be transferred to a second grinding table 'and ground with a second grinding surface. The grinding action on the second grinding table can be monitored by a second optical monitoring system, and the grinding action can be stopped when the second optical monitoring system indicates that a second bottom layer is at least partially burst. The substrate can be transferred to a third grinding table and smoothed with a smooth surface. The grinding action on the second grinding table can continue until the first bottom layer is completely burst out. In another aspect, the invention relates to a method for grinding a metal layer on a substrate by chemical mechanical polishing, wherein the substrate is ground at a first rate. The progress of the grinding is monitored by a swirl monitoring system, and the grinding rate is reduced when the swirl monitoring system indicates that the thickness of the metal layer remaining on the substrate is a predetermined value. The progress of the grinding is monitored by an optical monitoring system, and the grinding operation is stopped when the optical monitoring system indicates that at least a portion of the substrate is exposed. Advantages that the invention may have when implemented include one or more of the following features. During the metal layer grinding, the pressure distribution applied by the grinding head can be adjusted to compensate for the uneven grinding rate of the substrate being fed and the page size. ) ------------- II ^ --------- ^ --------- ^ (Please read the notes on the back before filling this page) 496812 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Uniform thickness. In addition, the grinding monitoring system can simultaneously sense the grinding end point of a metal layer. Furthermore, the grinding monitoring system can determine the time when the grinding equipment switches the grinding parameters. For example, a grinding monitoring system may be used to trigger a reduction in a grinding rate before the end of the grinding of a metal layer is reached. Grinding can be stopped at very precise points in time. Over- and under-grinding conditions can be reduced, and dishing and corrosion can be reduced, so yields and production rates can be improved. Other features and advantages of the present invention will become more comprehensible after reading the following descriptions and drawings and the scope of the application. Brief description of the drawings: Fig. 1 is a schematic front sectional view of a chemical mechanical polishing equipment. FIG. 2 is a schematic cross-sectional view of a polishing head. FIG. 3A is a side view and a partial cross-sectional view of a chemical mechanical polishing table, which includes a vortex monitoring system and an optical monitoring system. Figure 3B is a schematic top view of the platform of the grinding table in Figure 3A. Figure 4 is a schematic circuit diagram of the swirl monitoring system. Figure 5 is a schematic cross-sectional view of a magnetic field generated by the cyclone monitoring system. FIG. 6 is a schematic front view of an axis of a rotary flu detector. Figures 7A-7D are schematic illustrations of a method for detecting an end point of grinding using a flu detector. Fig. 8 is an amplitude curve chart obtained by the cyclone monitoring system. Figure 9A-9C schematic circuit diagram of the swirl monitoring system. Fig. 10 is a phase shift curve obtained by the vortex monitoring system. Page 12 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) i — — — — — — — — — 111 — — — — — — — — — — — — — — — — — — — — (Please read the precautions on the back before filling this page) 496812 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Figure 11 shows the amplitude curve obtained by the optical monitoring system. FIG. 12 is a flowchart of a method for grinding a metal layer. FIG. 13 is a flowchart of a method for grinding a metal layer. Figure 14 is a side view and a partial cross-sectional schematic diagram of a chemical mechanical polishing table, which includes a swirl monitoring system. Figures 15 A-15B are schematic cross-sectional views of a polishing pad. Comparative description of drawing numbers: 10 substrate 12 metal layer 14 bottom layer (insulating layer) 16 conductive layer 16 'internal connection 18 barrier layer 20 chemical mechanical polishing and grinding equipment 22, 22a, 22b, 22c grinding table 23 transfer table 24 platform 25 Center shaft 26 Concavity (hole) 28 Pad adjustment device 29 Current collector 30 Double-layer polishing pad 32 Support layer 32 'Support layer 32, Support layer 335 Part of the support layer 3 3, The support layer and the blanket cover Part 34 blanket cover 34, blanket cover 36 transparent part (window) 36, part of polishing pad 36 ?, part of thin pad 38 polishing slurry 39 slurry / cleaner supply arm 40 swirl monitoring system 42 Axis 42a, 42b pole 1st top This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ------------ ^ --installation --------- Order --------- line (please read the precautions on the back before filling this page) 496812 η Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 ____ Β7 ____ ·-* ------ 、 Description of the Invention (44) Driving coil 46 Sensing coil 48 Driving system 50 Oscillator 52 Capacitor 54 RF amplifier 56 Diode 58 Sensing system System (circuit) 60 rotatable multi-head rotary base 62 center column 64 rotary shaft 66 rotary base support plate 68 cover 70 grinding head 71 center shaft 72 radiation groove 74 grinding head drive handle 76 grinding head rotation motor 80 position sensor 82 Flag 90 Computer 92 Output device 94 Phase displacement sensor 96 Sampling area 100 NOR gate 102 NOR gate 104 Third NOR gate 106 Filter 140 Optical monitoring system 142 Light beam 142 Patterned part on the bottom 144 Light source 146 Detector 200 Grinding head 202 Housing 204 Base assembly 206 Balance mechanism 208 Load chamber 210 Retaining ring 212 Substrate support assembly 216 Flexible inner membrane 218 Flexible outer membrane 220 Internal support structure 222 Internal spacer ring 230 External support structure 232 Channel 234 Floating upper chamber 236 Floating lower chamber, chamber Page 14 This paper is in accordance with China National Standard (CNS) A4 (210X297 mm) 496812 A7 B7 Printed and invented by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Description (238 Outer chamber 244 Inner wing 246 Outer wing description: _ See Figure 1. One of the figures holds a plurality of substrates 10 which can be ground by a chemical mechanical polishing (CMP) apparatus 20. One similar to this grinding apparatus 20 can be found in the description of U.S. Patent 5,738,574, which is incorporated herein by reference. The grinding apparatus 20 includes a series of grinding tables 22a, 22b, and 22c and a transfer table 23, wherein the latter transfers the substrate between the grinding head and a loader. Each polishing table includes a rotatable platform 24, and there is a polishing pad 40 on the platform 24. The first and second polishing tables 22a and 22b may include a double-layer polishing pad or a pad having abrasive particles, the polishing pad having a hard and wear-resistant outer surface. The final grinding head 22c may include a relatively soft pad or a double-layer pad. In addition, each polishing table may also include a pad adjustment device 28 to enable the surface condition of the polishing pad to be maintained and the substrate to be effectively polished. See Figure 3A. A two-layer polishing pad 30 typically has a support layer 32 and a blanket covering layer 34, wherein the layer 32 is in contact with the surface of the platform 24, and the layer 34 is used to polish the substrate 10, and the latter is typically higher than the former The hardness is large. However, some grindstones only have a blanket coating and no support layer. The blanket cover 34 may be formed of foam or cast polyurethane, and may also be filled with a filler such as a hollow micro-round body and / or a concave groove surface. The support layer 32 may be formed of compressed wool fibers bleached with a urethane. An example of such a double-layer pad can be made by Delaware's Rodel Company, and its blanket cover is IC-1000. Page 15 This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) ----- ------- 1 丨 Install --------- Order --------- line (please read the precautions on the back before filling this page) 496812 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative A7 B7 V. Description of the invention () The support layer is formed by SUB A-4 (1C-1000 and SUB A-4 are the product names of Rodel). During the grinding step, a polishing slurry 38 and a pH adjuster (such as potassium hydroxide used in the grinding of oxygen ° substance) can be added to the surface of the polishing pad 30, wherein the slurry contains a liquid (such as oxide Deionized water used in grinding), the action of adding to the polishing pad 30 is provided by a slurry supply port or a slurry / cleaning agent supply arm 39. If the polishing pad 30 is a standard polishing pad, the slurry 38 may also be one containing abrasive particles (such as silicon dioxide for oxide polishing).凊 Refer to Figure 1 again. The figure shows that a rotatable multi-head rotary base 60 is labeled with four grinding heads 70. A central post 62 of the rotary base rotates around a rotary axis 64, and a rotating actuator is a rotary base motor assembly (not shown). Thus, the grinding head system and the substrate attached thereto are fixed on the grinding table 22 And the transfer table 23 moves. Three of the grinding head systems receive and hold the substrate and press it against the grinding pad to perform grinding. At the same time, one of the grinding head systems receives a substrate from the transfer table 23 or transfers a substrate to the table 23. Each grinding head 70 is connected by a grinding head drive handle 74 to a grinding head square rotation motor 7 6 (the cover member 6 8 can be seen by removing a quarter), so that each grinding head can be independent Rotate its axis. In addition, each of the grinding heads oscillates laterally into the groove 72 with a radiation in the rotary base supporting plate 66. An example of a suitable abrasive head can be found in U.S. patent applications 09 / 470,820 and 09 / 535,575, the disclosure of which is incorporated herein by reference. In actual operation, the platform rotates about its central axis 25, while the grinding head rotates about its central axis 71, which is horizontal on the surface of the polishing pad. Page 16 This paper applies the Chinese National Standard (CNS) A4 specification (210X297). (Mm) " ----r · * ^, *-·· * — * · ^ (Please read the precautions on the back before filling out this page) 496812 A7 B7 V. Description of the invention () Move to the right. (Please read the precautions on the back before filling out this page) As shown in the above application and the grinding head example 70 shown in Figure 2, it contains a housing 202, a base assembly 204, and a balancing mechanism 206 (can be viewed As part of the base assembly 204), a load chamber 208, a retaining ring 210 and a substrate support assembly 212, which contains three pressurizable chambers, such as a floating upper chamber 236, a floating lower chamber室 234 and an outer chamber 238. The load chamber 208 is located between the housing 202 and the base assembly 204, and is used to provide a load to a vertical portion of the base assembly 204 and control the vertical portion. A first pressure regulator (not shown) can be fluidly connected to the load chamber 208 via a channel 232 to control the pressure in the vertical position of the load chamber and the base assembly 204. Ministry of Economic Affairs, Intellectual Property Bureau, employee consumer cooperative printed substrate supporting component 2 1 2 includes a flexible internal membrane 2 1 6, a flexible external membrane 2 1 8, an internal support structure 2 2 0, and an external support structure 2 3 〇 An inner spacer ring 222 and an outer spacer ring 232. The flexible inner membrane 216 includes a central portion that applies pressure to 10 wafers in a controllable area. The space between the base assembly 204 and the inner membrane 2 1 6 sealed by the inner wings forms the pressurizable floating lower chamber 2 3 4. The base assembly 204 and the inner membrane sealed by the inner wings 244 and the outer wings 246 The annular space between 216 forms the pressurizable floating upper chamber 236, and the sealed space between the inner membrane 216 and the outer membrane 218 forms a pressurizable outer chamber 238. Three pressure regulators (not shown) can be independently connected to the floating chamber 234, the floating upper chamber 236, and the outer chamber 238. Therefore, fluids such as gases can be independently led into or out of each chamber. Pressure of floating upper chamber 236, floating lower chamber 234 and outer chamber 23 8 page 17 This paper size applies to China National Standard (CNS) A4 (210X297 mm) " 496812 Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the consumer cooperative A7 B7 V. Description of the invention () The force can be combined with the contact area and pressure of the inner film 216 against one of the outer films 218. For example, when the fluid in the floating upper chamber 2 3 6 is evacuated, the edge of the inner film 2 1 6 will be lifted away from the outer film 2 丨 8 so that the contact between the inner film and the outer film can be reduced. Area contact diameter Dc. In contrast, when the fluid is drawn into the lower floating chamber 234, the edge of the inner film 216 is left close to the outer film 2 1 8 so that the contact diameter D c of the contact area can be increased. In addition, when the fluid is drawn into or out of the floating lower chamber 2 3 4, the pressure exerted by the inner membrane 2 1 6 on the outer membrane 2 1 8 changes. Therefore, by controlling the pressure, the diameter of the area loaded by the grinding head can be controlled. See Figures 3A and 3B. In the figure, a recess 26 is formed in the platform 24, and a transparent portion 36 is formed in the polishing pad 30 on the recess 26. The positions of the holes 26 and the transparent portion 36 are designed to enable them to turn below the base material 10 when the platform rotates a part, regardless of the moving position of the grinding head. Assuming that the polishing pad 32 is a double-layer pad, the construction of the thin pad can be achieved by removing a part of the support layer 32 and placing the transparent plug 36 into the blanket cover layer 34. The plug 36 may be a relatively pure polymer or polyimide, such as those without fillers. In general, the material of the transparent portion 36 should be non-magnetic and non-conductive. Please refer to FIGS. 3A and 4 continuously. In the figure, the first polishing table 22a includes a vortex monitoring system 40 and an optical monitoring system 140. The functions of the two systems 40 and 140 are similar to the same grinding process control and endpoint detection system. Both the second polishing table 22b and the final polishing table 22c may include an optical monitoring system, but both of them may also be provided with a vortex monitoring system. Page 18 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) ............... t ....... .. ^ (Please read the notes on the back before filling in this page) 496812 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention 58, the former is used to induce a swirl in a metal layer on a substrate, while the latter is used to detect a swirl induced in the metal layer using a drive system. The monitoring system 40 includes a shaft center 42 located in the recess 26 to rotate with the platform; a driving coil 40 is wound around a part of the shaft center 42; a sensing coil 46 is wound around the shaft On the second part of the heart 42. For the purpose of driving the system 48, the monitoring system 40 includes an oscillator 50, and the oscillator 50 is connected to the driving coil 44. To achieve the purpose of the sensing system 58, the monitoring system 40 includes a capacitor 52; a radio frequency amplifier 54 and a diode 56, wherein the capacitor 52 is connected in parallel with the sensing coil 46, and the radio frequency amplifier 54 is connected to the sensing coil 4. 6 ^ Exhauster 5 〇, capacitor 5 2, RF amplifier 54 and a pole body 56 can be placed at a distance from the flat 24, and can be coupled to the parts of the platform through a rotating current collector 29 on. See Figure 5. The figure shows that when the oscillator 50 is driven, it will drive the drive coil 44 to generate an oscillating magnetic field 48 that extends through the axis body 42 ′ and enters the gap 46 between the two poles 42 a and 42 b of the axis center 42. . At least a portion of the magnetic field 48 extends into the thin portion 36 of the polishing pad 30 and into the substrate 10. If a metal layer 12 is present on the substrate, the oscillating magnetic field 48 will generate a swirling current in the metal layer 12, and this swirling current will form an impedance source in parallel with the sensing coil 46 and the capacitor 52. When the thickness of the metal layer changes, its impedance will change accordingly, and the Q factor of the induction mechanism will change accordingly. By detecting the change in the Q factor of the sensing mechanism, the cyclone detector can sense the change in the intensity of the vortex, and the change in the thickness of the metal layer 12 can also be known. Page 19 This paper size applies to China National Standard (CNS) A4 specification (210x297 mm) ------------ 丨 -Packing --------- Order ----- ---- Line (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 496812 Α7 ---____ Β7 V. Description of Invention () Please refer to Figure 6. The figure shows that a coil 42 may be a non-conductive u-shaped body, which has a relatively high magnetic permeability (for example, about 2500). More specifically, the shaft ~ 42 may be made of ferrous salt. In a certain implementation method, the poles 42a and 42b are about 0.6 inches apart, the axis 42 is about 0.6 inches deep, and the cross-sectional shape of the axis is a square with a side length of about 0.2 inches. Generally speaking, the resonance frequency of the synchronous vortex monitoring system 40 is designed to be about 50 仟 Hz to 10 megahertz (for example, 2 megahertz). For example, the inductance value of the sensing coil 46 may be about 0.3 to 30 microhenry, and the capacitance value of the capacitor 52 may be about 0.2 to about 20 nanofarads (nF). The drive coil can be designed to match the drive signal from the oscillator. For example, if the oscillator has a low voltage and low impedance, the number of coils that drive the coil and the inductance value it provides can be smaller. On the other hand, if the ironing appliance has high voltage and high impedance, the driving coil can have a larger number of coils and a larger inductance value. In an implementation method, the number of coils of the sensing coil 46 is 9 turns, and these 9 turns are wound on each branch of the shaft center; the number of coils of the drive coil 44 is 2 turns, and the two turns are wound on the shaft On the base of the heart; and the amplitude of the exciter-driving drive coil 44 is about 0.1 volts to 5.0 volts. In addition, in another implementation, the inductance value of the sensing coil 46 is about 2.8 micro Henry, the power valley value of the power valley 52 is about 2.2 nanofarads, and the resonance frequency is about 2 million hertz. In another implementation method, the inductance value of the sensing coil is about 3 microfales. The electric valley value of the electric valley 52 is about 400 picofarads. Of course, the above values are just examples. In fact, these values are closely related to the actual winding pattern, axial composition and shape, and the size of the capacitor. Page 20 This paper size applies to the Chinese national standard (CNS > A4 size (210x297 public directors) ............. see i ......... t ..... .... $ (Please read the notes on the back before filling out this page) 496812 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The lower the resonance frequency that I want to get. Take a relatively old film ^ relatively thick film (such as 2⑻00 Angstrom thick film) as an example. 'At this time, the capacitance value and inductance value can be recharged. Those with a resonance frequency (such as about 5 ^ Hertz) ', but high resonance frequencies can also be applied to thick copper films. In addition,' very high resonance frequencies (such as 2MHz) can be used to reduce background noise of metal components in the grinding head Please refer to Sections 3A, 4 and 7Affi. Prior to grinding, the frequency of the exhaustor 50 is tuned to the resonance frequency of the A Lcf circuit, at which time the substrate does not exist. This resonance frequency enables the output of the RF amplifier 54 The amplitude of the signal becomes very large. In order to perform the polishing operation, a substrate 10 is placed on the basis of the polishing pad 30 as shown in FIG. 7B and As shown in Figure 8. The substrate 10 may include a stone wafer 12 and a conductive layer 16 (such as a metal layer, such as a copper layer, etc.), where the two are located on one or more patterned bottom layers 14, wherein the latter It can be a semiconductor, conductor, or insulator layer. A barrier layer 18 (such as a button or nitride button) can be placed between the metal layer and the underlying dielectric material. The patterned bottom layer can include metal features such as dielectric holes , Pads, interconnects, etc. Before grinding, since the bulk conductor layer 16 is relatively thick and continuous at the beginning, its impedance is low, and therefore a very strong swirling current can be generated in the conductive layer. As mentioned above, the swirling current will make the metal layer behave like the same impedance source in parallel with the sensing coil 46 and the capacitor 52. Therefore, the presence of the conductive layer 16 will reduce the Q factor of the sensing circuit. The RF amplifier 56 emits As a result, the amplitude of the signal is greatly reduced. Please refer to Figures 7C and 8. When the substrate 10 is ground, the conductive layer 16 page 21 This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ) ............ it ......... t ......... ^ (Please read first Note on the back, please fill in this page again) 496812 A7 B7 ^ Description of the invention () The block part is gradually thinned. When the conductive layer 16 is thinned, its resistance value is increased accordingly, and its internal swirl is also increased. Therefore, the degree of coupling between the metal layer 16 and the sensing circuit 5 8 decreases (ie, the impedance of the virtual impedance source increases); when the degree of coupling decreases, the Q factor of the inductor circuit 58 increases toward its original value Assembling, ordering, please refer to Figures 7D and 8. Finally, the fast part of the conductive layer 16 is removed, leaving only the internal connection 16 'in the trench between the patterned insulating layer 14. Serving. At this time, the coupling between the conductive part (usually a small area and a discontinuity) in the substrate and the sensing circuit 58 reaches a minimum value, so the Q factor of the sensing circuit also reaches a maximum value (but But it is not as large as the Q factor when the substrate is not present), so the output signal amplitude of the sensing circuit reaches a high point value. As a result, the computer 90 can sense an end point of grinding by increasing the amplitude of the sensed output signal no longer increasing and becoming flat (such as reaching a regional high). In addition, by grinding one or more test substrates, the operator of the grinding machine can also know the relationship between the output signal amplitude and the thickness of the metal layer. Therefore, the end point detector can stop the grinding operation when the thickness of the metal layer on the substrate reaches a certain point. More specifically, the computer 90 can trigger when the output signal of the amplifier exceeds a voltage threshold (which corresponds to the specified thickness) to indicate that the grinding has reached the end. In addition, the vortex monitoring system can also trigger changes to the grinding parameters. For example, when the monitoring system detects a grinding critical point, the CMP equipment can change the composition of the grinding slurry (for example, from a high selectivity to a low selectivity). As another example, the CMP device can change the pressure distribution applied by the polishing head, which will be discussed below. Article 2 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 496812

A7 _ ________ 發明説明（） 凊參閱第9A圖。除了感測振幅之變話以外，旋流監 視系統中可加有一相位移感測器94，以計算出感測到之訊 號的相位移。當金屬層被研磨時，經感測之訊號的相位會 相對於振盪器50之驅動訊號而改變。 旋流監測系統之振幅及相位移兩部份的實施作法示 於第9B圖中。由圖中可知，該種實施作法利用驅動訊號 及感測訊號而產生一相位移訊號，其中該相位移訊號的脈 波寬度或工作週期正比於相位差。在該實施作法中，兩 XOR閘100及102將感測線圈46及振盪器5〇送出之絃波 訊號分別轉換成方波訊號，該兩方波訊號再送進一第三 XOR閘104之輸入端。此時，第三X〇R閘1〇4之輸出為 一相位移訊號’其脈波寬度或工作週期正比於相位差。該 相位移訊號經由一 RC濾波器1〇6而產生一類直流式的訊 號’其電壓則與該相位差值成正比。此外，該訊號也可送 進一可程式化數位邏輯中（如送進一複合可程式化邏輯元 件（CPLD)或場可程式化閘陣列（fgp A)中），以進行相位移 之測量。另有一種漩流監視系統之振幅感測部份的實施作 法，其示於第9C圖中。一漩流監視系統測量驅動訊號及 感測訊號間之相位差的曲線結果示於第1 〇圖中。由於相 位測量與驅動頻率之穩定度密切相關，因此可在其中加以 鎖相迴路電子元件。 相位差測量所可能存在的優點為相位差對金屬層厚 度之關係要較振幅與金屬層厚度間之關係更為線性。此 外’金屬層之絕對厚度在相當大之厚度範圍内皆可測量出 第23頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812 A7 B7 發明説明（） 來。 #參閱第3A圖。圖中，光學監視系統140(具有反射 儀或干涉儀之功能）可被固定至漩流監視系統40之平檯24 凹處26中’其中該凹處26與該旋流監視系統40相鄰。。 因此’光學監視系統丨4〇可以在旋流監視系統4〇對基材 進行測S時同時測量該基材上大致相同位置之反射率。更 特定說來’光學監視系統140可如漩流監視系統40 —般 對基材上與平檯24之旋轉轴徑向距離相等的部份加以測 量。因此，光學監視系統丨4〇可以與漩流監視系統4〇相 同的路徑在基材上掃動。 光學監視系統1 4 0包含一光源1 4 4及一偵測器1 4 6， 其中光源144產生一光束142，該光束142則傳輸通過透 明視窗部份36及研磨漿而投射在基材1〇之暴出表面上。 舉例而言，光源144可為一雷射，而光束142可為一準直 雷射光束。雷射光束142可從雷射144發出而以與基材1〇 表面之法線方向夹一角度的方向投射至基材1〇表面上。 此外，若孔洞26及視窗36為橢長者，那麼此時可在光束 路徑上加入一拓束器（圖中為顯示），以沿視窗之橢長軸將 光束加以拓寬。一般說來，光學監視系統的功能就如美國 經濟部智慧財產局員工消費合作社印製 專利6，1 5 9,073及美國專利申請案〇9/1 84,767所揭示者， 該兩文獻皆併入本案中，以供參閱。 一光學監視系統對驅動訊號及感測訊號間之相位差 的測量結果示於第1 1圖之曲線250,該強度曲線250的整 體形狀將解釋如後。起初，金屬層16存有某些表面地勢， 第24頁 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公楚) 12 12A7 _ ________ Description of the invention () 凊 Refer to Figure 9A. In addition to changing the amplitude of the sensed signal, a phase shift sensor 94 may be added to the cyclone monitoring system to calculate the phase shift of the sensed signal. When the metal layer is polished, the phase of the sensed signal is changed relative to the driving signal of the oscillator 50. The implementation of the amplitude and phase shift of the cyclone monitoring system is shown in Figure 9B. As can be seen from the figure, this implementation method uses a driving signal and a sensing signal to generate a phase shift signal, where the pulse width or duty cycle of the phase shift signal is proportional to the phase difference. In this implementation method, the two XOR gates 100 and 102 convert the sine wave signals sent by the sensing coil 46 and the oscillator 50 into square wave signals, respectively, and the two square wave signals are sent to an input terminal of a third XOR gate 104. At this time, the output of the third XOR gate 104 is a phase shift signal, and its pulse width or duty cycle is proportional to the phase difference. The phase-shifted signal is passed through an RC filter 106 to generate a type of DC-type signal. The voltage is proportional to the phase difference. In addition, the signal can also be fed into a programmable digital logic (such as a compound programmable logic element (CPLD) or a field programmable gate array (fgp A)) for phase shift measurement. Another implementation of the amplitude sensing portion of the vortex monitoring system is shown in Figure 9C. A curve measurement result of the phase difference between the driving signal and the sensing signal by a vortex monitoring system is shown in FIG. 10. Since the phase measurement is closely related to the stability of the drive frequency, phase-locked loop electronics can be included in it. A possible advantage of phase difference measurement is that the relationship between phase difference and metal layer thickness is more linear than the relationship between amplitude and metal layer thickness. In addition, the absolute thickness of the metal layer can be measured within a relatively large thickness range. Page 23 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 496812 A7 B7 Invention Description (). #See Figure 3A. In the figure, the optical monitoring system 140 (having the function of a reflectometer or an interferometer) can be fixed to the recess 24 of the platform 24 of the swirl monitoring system 40, wherein the recess 26 is adjacent to the swirl monitoring system 40. . Therefore, the 'optical monitoring system' 40 can simultaneously measure the reflectance of approximately the same position on the substrate when the swirl monitoring system 40 measures the substrate. More specifically, the 'optical monitoring system 140' can measure the portion of the substrate that is equal to the radial distance of the rotation axis of the platform 24, like the vortex monitoring system 40. Therefore, the optical monitoring system 4o can sweep on the substrate in the same path as the swirl monitoring system 40. The optical monitoring system 140 includes a light source 144 and a detector 146. The light source 144 generates a light beam 142, which is transmitted through the transparent window portion 36 and the polishing slurry to be projected on the substrate 1. Outbreak on the surface. For example, the light source 144 may be a laser, and the light beam 142 may be a collimated laser beam. The laser beam 142 may be emitted from the laser 144 and projected onto the surface of the substrate 10 in a direction at an angle to the normal direction of the surface of the substrate 10. In addition, if the hole 26 and the window 36 are ellipsoidal, then a beam expander (shown in the figure) can be added to the beam path to widen the beam along the ellipsoidal axis of the window. Generally speaking, the function of the optical surveillance system is as disclosed in the US Patent No. 6,15,073 printed by the Intellectual Property Office of the U.S. Department of Economics and the US Patent Application No. 09/1 84,767, both of which are incorporated into this case. For reference. The measurement result of the phase difference between the driving signal and the sensing signal by an optical monitoring system is shown in the curve 250 in FIG. 11. The overall shape of the intensity curve 250 will be explained later. At first, the metal layer 16 had some surface topography. Page 24 This paper size is applicable to China National Standard (CNS) A4 (210x297). 12 12

A7 B7 發明説明（） 這是由於底層之經圖案化層 142之故。由於此地勢之存 在，光束將會因投射在金屬層上而散射。當研磨動作進行 至曲線252部份時，金屬層將會變得較平坦，而經研磨之 金屬層的反射率會增加。當金屬層的塊體部份被移除而形 成曲線部份254時，強度仍染保持相對穩定。一旦氧化層 開始暴出時，曲線部份2 5 6的整體訊號強度便快速下降。 一旦氧化層完全暴出時，曲線強度在曲線部份258時再度 變得穩定，不過其中仍有些微振盪，這是由於氧化層被移 除時所產生的干涉儀效應。 請再回到第3A，3B及4圖，圖中顯示CMP設備20亦 可包含一位置感測器80(如光干擾器），以感測軸心42及 光源44何時將位於基材1 0下方。舉例而言，光干擾器可 被設於研磨頭70對面之一固定點處，一旗狀物82則被接 附至平檯之周緣，其中旗狀物82之接點與長度可加以選 擇而使其在透明部份36掃至基材10底下時對感測器80 之光訊號加以干擾。此外，CMP設備亦可加入一編瑪器， 以決定出平檯之角位置。 ——般用途之可程式化數位電腦90被設計用以從旋 流監視系統接收強度訊號及相位移訊號，並從光學監視系 統接收強度訊號。由於監視系統在平檯每轉動一周時便會 掃動至基材底下一次，因此金屬層厚度及底層暴出之程度 的資訊便能以同步、連續並即時的方式累加，電腦90並 可加以程式化而在基材大致位於透明部份3 6之上（此由位 置感測器決定之）時對監視系統之測量值加以取樣。當研 第25頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公楚) 經 濟 部 智 慧 財 產 局 員 X 消 費 合 社 印 製 496812 A7 B7 五、發明説明（） 磨繼續進行時，金屬層的反射率或厚度會改變，而所採樣 得之訊號也會隨時間改變，其中後者可形成曲線。研磨中 監視系統的測量結果可顯示於一輸出裝置92上，以使該 裝置之操作員可直接以目視方式監視研磨動作的進行。此 外，曲線可用以控制研磨過程，並可利用之而決定出金屬 層研磨過程的終點，這在以下將有論述。 從漩流監視系統40及光學監視系統14〇送出之訊號 被送進電腦90當中，且可以其中之一者或兩者來進行終 點到來與否之判定。如此，化學機械研磨器在研磨介電層 及金屬材料時可有較強健之終點偵測能力。從該兩系統發 出之訊號可以被監測而得到終點臨界點，且該兩系統之終 點臨界之偵測可與與各種不同的布林邏輯運算（如AND或 OR運算）相輔為用，以觸發指出研磨之終點的到來或造成 製程參數的改變。偵測器邏輯所進行的製程控製及終點臨 界判斷包含有區域性最小值及區域性最大值、斜度之改 變、振幅或斜度之臨界值或以上各者之組合。其中一監視 系統可用以確認另一監視系統β舉例而言，研磨設備可能 只在漩流訊號及光強度訊號兩者中都偵測到適當的終點 聯界出現時才停止研磨動作。而另一方面，其中一系統也 可當作一備用之終點偵測器。例如，研磨設備可能只在真 測到其中一系統有一第一終點臨界指示時即停止研磨動 作的進行（如該系統可為旋流監視系統），且若終點臨界指 示在某一特定時間區間中未被偵測出來時，研磨仍可能藉 由積測到另一系統發出之一第二終點臨界指示而停止（如 第26頁 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公爱）A7 B7 Invention Description () This is due to the underlying patterned layer 142. Due to this terrain, the beam will be scattered by being projected on the metal layer. When the grinding operation proceeds to the part of the curve 252, the metal layer will become flatter, and the reflectivity of the polished metal layer will increase. When the bulk portion of the metal layer was removed to form a curved portion 254, the intensity remained relatively stable. Once the oxide layer begins to burst, the overall signal strength of the curve portion 2 5 6 decreases rapidly. Once the oxide layer is completely burst, the curve intensity becomes stable again at curve part 258, but there is still some slight oscillation, which is due to the interferometer effect when the oxide layer is removed. Please return to Figures 3A, 3B and 4 again. The figure shows that the CMP device 20 may also include a position sensor 80 (such as a light jammer) to sense when the axis 42 and the light source 44 will be located on the substrate 1 0. Below. For example, the optical jammer can be set at a fixed point opposite the grinding head 70, and a flag 82 is attached to the periphery of the platform. The contact point and length of the flag 82 can be selected. When the transparent portion 36 is swept under the substrate 10, it interferes with the optical signal of the sensor 80. In addition, a CMP device can be added to determine the angular position of the platform. The general purpose programmable digital computer 90 is designed to receive intensity signals and phase shift signals from a cyclone monitoring system and intensity signals from an optical monitoring system. Since the monitoring system will sweep to the bottom of the substrate every time the platform rotates once, the information of the thickness of the metal layer and the extent of the bottom layer can be accumulated in a synchronized, continuous and real-time manner. The measurement value of the monitoring system is sampled when the substrate is substantially above the transparent portion 36 (this is determined by the position sensor). When the paper is on page 25, this paper size is in accordance with Chinese National Standard (CNS) A4 (210X297). Member of the Intellectual Property Bureau of the Ministry of Economic Affairs X Printed by Consumer Cooperative 496812 A7 B7 V. Description of the invention The reflectivity or thickness will change, and the sampled signal will change over time, with the latter forming a curve. The measurement results of the monitoring system during grinding can be displayed on an output device 92 so that the operator of the device can directly visually monitor the progress of the grinding action. In addition, the curve can be used to control the grinding process and can be used to determine the end point of the metal layer grinding process, which will be discussed below. The signals sent from the swirl monitoring system 40 and the optical monitoring system 14 are sent to the computer 90, and one or both of them can be used to determine whether the end point is present or not. In this way, the chemical mechanical grinder can have a strong endpoint detection ability when grinding dielectric layers and metal materials. Signals sent from the two systems can be monitored to obtain the end point, and the end point detection of the two systems can be used in conjunction with various different Bollinger logic operations (such as AND or OR operations) to trigger Point out the arrival of the end of grinding or cause changes in process parameters. The process control and end-point critical judgment performed by the detector logic include the regional minimum and regional maximum, changes in slope, critical values of amplitude or slope, or a combination of the above. One monitoring system can be used to confirm the other monitoring system β. For example, the grinding device may only stop the grinding operation when the appropriate end point is detected in both the swirl signal and the light intensity signal. On the other hand, one of the systems can also be used as a backup endpoint detector. For example, the grinding equipment may stop the grinding action only when one of the systems actually has a first end point critical indication (eg, the system may be a swirl monitoring system), and if the end point critical indication is within a certain time interval When it is not detected, the grinding may still be stopped by accumulating a second end point critical indication issued by another system (such as page 26, this paper size applies the Chinese National Standard (CNS) A4 specification (210X 297) )

812 812812 812

A7 B7 發明説明（) 可為光學監視系統）。此外，兩系統也可分別使用在不同 研磨動作之不同時間部份上。例如，在金屬層研磨時（特 別是指銅研磨），基材之大部份可能會被磨及，而此時係 利用旋流監視系統為之。 在一金屬的研磨動作中，CMP設備20使用漩流監視 系統40及光學監視系統140來判定填充層塊材何時將被 移除，並用以決定底部之停止層何時已能大致暴出。電腦 90對取樣得之訊號加以處理控制及終點偵測邏輯，以判定 何時該改變製程參數，並用以偵測研磨之終點。當漩流監 視系統判定出金屬層已抵達一預定厚度時，光學監視系統 可用以偵測底層絕緣材料何時將會暴出。 此外，電腦90可加以程式化，以將從漩流監視系統 40及光學監視系統1 40在基材底下每掃動一此所獲得的 測量值加以細分成為來自複數個採樣區域96者，以計算 每一採樣區域之輻射位置、將振幅測量值分類成為徑向各 位置所獲得者、決定每一取樣區域之最小值、最大值及平 均值，並利用多徑向位置來決定出研磨之終點，這在美國 專利申請案09/460,529中有所論述，在此將之併入本案， 以供參閱。 電腦48也可連接至控制研磨頭70所施加之壓力的壓 力機構處；也可連接至研磨頭旋轉馬達76，以控制研磨頭 之旋轉速率；也可連接至平檯旋轉馬達（未顯示），以控制 平檯旋轉速率；或也可連接至研磨漿分佈系統39，以控制 提供至研磨墊上的研磨漿組成。更進一步說來，在將測量 第27頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱) 812 812A7 B7 Invention description () can be an optical surveillance system). In addition, the two systems can also be used separately for different parts of the grinding operation. For example, when grinding metal layers (especially copper grinding), most of the substrate may be ground, and in this case, a swirl monitoring system is used. In a metal grinding operation, the CMP equipment 20 uses the swirl monitoring system 40 and the optical monitoring system 140 to determine when the filling layer block is to be removed, and is used to determine when the bottom stop layer can be roughly burst. The computer 90 performs processing control and endpoint detection logic on the sampled signals to determine when the process parameters should be changed and is used to detect the endpoint of the grinding. When the vortex monitoring system determines that the metal layer has reached a predetermined thickness, an optical monitoring system can be used to detect when the underlying insulating material will burst. In addition, the computer 90 may be programmed to subdivide the measurement values obtained from each of the swirl monitoring system 40 and the optical monitoring system 1 40 under the substrate into a plurality of sampling areas 96 for calculation. The radiation position of each sampling area, classifying the amplitude measurement values into the radial positions, determining the minimum, maximum, and average values of each sampling area, and using multiple radial positions to determine the end point of grinding, This is discussed in U.S. Patent Application 09 / 460,529, which is incorporated herein by reference. The computer 48 can also be connected to a pressure mechanism that controls the pressure applied by the grinding head 70; it can also be connected to the grinding head rotation motor 76 to control the rotation rate of the grinding head; it can also be connected to a platform rotation motor (not shown), To control the rotation speed of the platform; or it can be connected to the slurry distribution system 39 to control the composition of the slurry provided to the polishing pad. Furthermore, the paper size will be measured on page 27. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public love) 812 812

A7 B7 發明説明（） 值分類成為各徑向位置所得者之後，金屬層厚度的資訊就 可即時送入一閉迴路控制器中，以週期性或連續性地對一 研磨頭所提供之研磨壓力分佈加以修正，這在美國專利申 請案09/6 09,426中即有論述，在此將之揭露的全部内容併 入此處，以供參閱。舉例而言，電腦可判定幅射向外側部 份的終點臨界條件已達，但内側部份卻仍未達，這就指出 了底層之圓環狀外側區域已暴出，而基材之内側部份之底 層則仍未暴出。此時，電腦可將壓力所施加之範圍的直徑 縮小，如此壓力便可只加在基材之内部區域上，進而降低 基材外部區域上之碟形現象及腐蝕程度。一種研磨一金屬 層（如銅層）之方法的流程圖示於第12圖中。首先，基材在 第一研磨台22 a處研磨，以將塊材金屬層移除，其中該過 程係由漩流監視系統40監視之。當留在底部阻障層1 4上 之銅層14達至一預定厚度時（如2000埃），研磨動作就加 以停止，而基材則被移送到第二研磨台22b，其中第一研 磨終點的指示可在相位移超過一實驗決定之臨界值時觸 發指出。第一研磨台研磨時的研磨參數範例可包含一平檯 旋轉速率93rpm、研磨頭壓力約為3psi、使用之研磨墊為 IC-1010者。在第一研磨台的研磨動作進行時，旋流監視 系統40所發出之徑向厚度資訊可被送至一閉迴路回授系 統，以控制基材上方研磨頭200所施之壓力及/或負載區。 此外，研磨墊上之固定環的壓力也可加以調整，藉以調整 研磨速率，以使研磨頭得以補償研磨速率之不均勻性及送 進之基材之金屬層的不均勻厚度特性。因此，在第一研磨 第2煩 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812 1 .~~~ I .S慧財產f Η消費合作社印製 A7 B7 發明説明（） 台進行之研磨之後，大部份的金屬層皆已被移除，而仍遺 留在基材上的金屬層表面也大致都被平坦化。 在第二研磨台2 2b研磨時，基材的研磨速旅一於在第 一研磨台所進行者，例如研磨速率被降低約5 〇%至7 5 %。 為達到降低研磨速率之目的，此時研磨頭壓力可以減小、 研磨頭旋轉速率可以減小、研磨漿組成可以改變而導入較 慢之研磨漿、且/或平檯旋轉速率可以減小。例如，基材上 由研磨頭施予之壓力可降低約33%至50%。第二研磨台 22b之研磨參數範例計有43irpm的平檯璇晚速率、約2psi 的研磨頭壓力及使用1C-1010研磨塾。 在第二研磨台2 2b上的研磨過程係由一光學監視系統 i視之’研磨進行則止於金屬層被移除、而底部阻障層暴 出之時。▲然’仍有少f金屬層留在基材之上，但其大部 伤均已移除。光學監視系統在決定終點時是很有用的，因 為其可在阻障層暴出時偵測出反射率的改變。更進一步來 說，第二研磨台之終點可在光學監視訊號降至一實驗決定 之臨界值以下時觸發得知，其中上述臨界值係由電腦監視 整個徑向範圍而獲得者。當然，在第二研磨台22b之研磨 進行時，由光學監視系統40送出之反射率資訊可被送進 一閉迴路回授系統，以控制研磨頭200之壓力及/或負載 區’藉以避免最早暴出之阻障層被過度研磨。 藉由在阻障層暴出之前降低研磨速率的作法可以使 碟形及腐姓程度降低。此外，研磨機器之相對反應時間得 以改善，這使得研磨機器在最後的終點臨界條件被偵測出 第29頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------------ — f---------線 一請先閲讀背面之注意事項再填寫本頁) 496812 A7 B7 五、發明説明（） 來之後能在較少材料被移除的情形下停止研磨、並將基材 轉送至第三研磨台。再者，在接近所期望之研磨結束時間 時可收集到更多測量值，因此有可能使研磨終點之計算準 確度得到提升。不過，藉由將第一研磨台之大部份研磨動 作維持在高研磨速率可達到高產出速度之目的。較佳的作 法是，在研磨頭壓力降低或其它研磨參數改變之前，至少 有75°/。（如8 0-90%)的金屬層塊材已被磨除。 一旦在第二研磨台2 2b將金屬層磨除，基材將會被轉 送到第二研磨台2 2 c ’以將阻障層加以移除。第二研磨台 的研磨參數範例包含103 rpm的平檯旋轉速率、研磨頭壓 力3psi及使用一 IC-1010研磨塾。此外，基材也可選擇性 加以短暫之起始步驟，如計行約5秒鐘、某種程度上較高 之壓力（如3psi)及平檯旋轉速率（如l〇3rpm)。該在第三研 磨台22c進行之研磨過程係由一光學監視系統為之，並持 續進行直至阻丈層大致移除、而底部介電層大致暴出。相 同的研磨漿可用於第一及第二研磨台上，不過在第三研磨 台時則可使用不同的研磨漿。 經濟部智慧財產局員工消費合作社印製 另外一種研磨一金屬層（如銅層）之方法的流程圖被示 於第13圖中，且該方法與第12圖所示之方法類似。不過， 在本方法中，快速及慢速的研磨步驟都在第一研磨台 執行之，阻障層的移除在第二研磨台2 2b進行之，而最終 研磨台22c則進行以光滑步驟。 上述之漩流及光學監視系統可用於相當廣泛之研磨 系統中。研磨表面及基#間的相對移動可由研磨塾、研磨 第30頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（） 頭或兩者移動而達成之。研磨塾可為一固定至平檯之圓幵> 墊（或其它形狀之墊）、一延伸於供應及緊縮卷軸間的線帶 或一連續帶。研磨塾可被固定至一平檯上，在研磨動作進 行之間在平檯上漸進移動，或可在研磨之時連續在平楼上 被驅動。研磨墊在研磨期間可被固定至平檯，或可在研磨 時在平檯及研磨墊之間存有一流體推力。研磨塾可為一表 準（如具有填充劑或無填充劑之聚亞胺）粗糙墊、一軟塾< 一有研磨粒子於其中之墊。振盪器之驅動頻率可不在基材 在不存在之時加以調諧，其可在經研磨或未經研磨之基材 存在時（研磨頭存在或不存在）調諧至一共振頻率，或可調 譜至其它參考頻率。 雖然以上都將光學監視系統1 4 0與旋流監視系統4 〇 置於相同的孔洞中，但該兩者實則可位於平檯上不同之 處。舉例而言，光學監視系統丨4〇及旋流監視系統4〇可 被置於平檯之異側上，如此該兩者就能以另一種方式掃描 該基材表面。 請參閱第14圖。圖所示為另一種實施作法，其中第 一研磨台僅包含一漩流監視系統4〇而不包含光學監視系 統。此時，研磨墊之部份36，不需為透明者，不過其卻以 相對為細者為佳。舉例而言，假設研磨墊為一雙層墊， 那麼薄塾部份36,可建構成如第15Α圖所示者，即將支撐 層32’的部价33 ’加以移除而得。此外，薄墊部份36”也可 J用移除支樓層32”及毯覆層34”之一部份的部份33,，而達 成之。因此，以這種實施作法為之時，薄墊部份36，，内之 第31頁 --------------*--^ I I I (請先閲讀背面之注意事項再填寫本頁) 496812 A7 B7 五、發明説明（） 毯覆層34”的底表面中有一凹處。若該研磨墊為一單層 墊，那麼薄墊部份36可以移除該墊材料之一部份以在該 墊之底表面中形成一凹處而形成之；若該研磨墊本身足夠 薄或具有不與旋流測量值相干擾之導磁率（及導電率）時 該墊就不需要任何的修改或凹處。 在旋流感測器使用者為一單一線圈時，本路 找。月之諸多 樣態依然可適用之，如線圈擺置於基材對面之 唧曆表面的 一側上’或是相位差之測量。在一單一線圈系 死中，振盪 器及感測電容（及其它感測電路）都被接至同一線圈。 上述之說明僅為本發明中的較佳實施例， 而非用以 限定本發明之範圍，故利用這些實施例所進 π的修改或 更動都不脫離在所附專利範圍所言明之範圍外， ’本發明 之範圍當以後述的專利申請範圍為基準。 ...............i...................^ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 頁 2 3 0 公 97 2 X ο 21 規 4 A S) N (C 標 家 國 國 中 用 適 度 尺 張 紙 本A7 B7 Description of the invention After the () value is classified as the winner of each radial position, the information of the thickness of the metal layer can be immediately sent to a closed-loop controller to periodically or continuously apply the grinding pressure provided by a grinding head. The distribution is modified as discussed in US Patent Application 09/6 09,426, the entire disclosure of which is incorporated herein for reference. For example, the computer can determine that the critical condition of the end point of the radiation to the outer part has been reached, but the inner part has not yet reached, which indicates that the annular outer area of the bottom layer has burst and the inner part of the substrate The bottom of the share has not yet burst out. At this time, the computer can reduce the diameter of the range where the pressure is applied, so that the pressure can be applied only to the inner area of the substrate, thereby reducing the dishing phenomenon and the degree of corrosion on the outer area of the substrate. A flow diagram of a method of grinding a metal layer (such as a copper layer) is shown in FIG. First, the substrate is ground at a first grinding table 22a to remove the bulk metal layer, wherein the process is monitored by a swirl monitoring system 40. When the copper layer 14 remaining on the bottom barrier layer 14 reaches a predetermined thickness (for example, 2000 angstroms), the grinding operation is stopped, and the substrate is transferred to the second grinding table 22b, where the first grinding end point is The indication can be triggered when the phase shift exceeds a critical value determined experimentally. Examples of grinding parameters during the first grinding stage may include a table rotation rate of 93 rpm, a grinding head pressure of about 3 psi, and the polishing pad used is IC-1010. When the grinding action of the first grinding table is performed, the radial thickness information sent by the swirl monitoring system 40 can be sent to a closed loop feedback system to control the pressure and / or load applied by the grinding head 200 above the substrate Area. In addition, the pressure of the fixing ring on the polishing pad can also be adjusted to adjust the polishing rate so that the polishing head can compensate for the unevenness of the polishing rate and the uneven thickness characteristics of the metal layer of the substrate being fed. Therefore, in the first grinding, the second paper size is subject to the Chinese National Standard (CNS) A4 specification (210X297 mm) 496812 1. ~~~ I.S. Hui property f ΗConsumer cooperative printing A7 B7 Invention description () Taiwan After the grinding, most of the metal layer has been removed, and the surface of the metal layer still left on the substrate is substantially planarized. When the second grinding table 22b is ground, the polishing speed of the substrate is lower than that performed on the first grinding table. For example, the grinding rate is reduced by about 50% to 75%. In order to reduce the grinding rate, the pressure of the grinding head can be reduced, the rotation rate of the grinding head can be reduced, the composition of the grinding slurry can be changed to introduce a slower grinding slurry, and / or the rotation speed of the platform can be reduced. For example, the pressure exerted by the abrasive head on the substrate can be reduced by about 33% to 50%. Examples of grinding parameters of the second grinding table 22b include a platform speed of 43 irpm, a grinding head pressure of about 2 psi, and grinding using 1C-1010. The grinding process on the second grinding table 22b is performed by an optical monitoring system i, and the grinding is performed until the metal layer is removed and the bottom barrier layer is exposed. ▲ 然 ’There are still few metal layers left on the substrate, but most of the injuries have been removed. Optical surveillance systems are useful when deciding on an end point because they can detect changes in reflectivity when the barrier layer bursts. Furthermore, the end point of the second grinding table can be triggered when the optical monitoring signal drops below an experimentally determined threshold, which is obtained by a computer monitoring the entire radial range. Of course, during the grinding of the second grinding table 22b, the reflectance information sent by the optical monitoring system 40 can be sent to a closed loop feedback system to control the pressure and / or load zone of the grinding head 200 to avoid the earliest The exposed barrier layer was excessively ground. By reducing the grinding rate before the barrier layer bursts, the dish shape and rottenness can be reduced. In addition, the relative response time of the grinding machine has been improved, which has enabled the critical condition of the final end of the grinding machine to be detected. ------- — f --------- Line 1 Please read the notes on the back before filling in this page) 496812 A7 B7 V. Description of the invention () Can be removed in less material after coming If it is removed, the grinding is stopped and the substrate is transferred to the third grinding table. Furthermore, more measured values can be collected near the desired grinding end time, so it is possible to improve the accuracy of the grinding end point calculation. However, a high throughput rate can be achieved by maintaining most of the grinding operation of the first grinding table at a high grinding rate. Preferably, at least 75 ° / before the pressure of the grinding head is reduced or other grinding parameters are changed. (Such as 80-90%) the metal layer block has been removed. Once the metal layer is removed on the second grinding table 22b, the substrate will be transferred to the second grinding table 22c 'to remove the barrier layer. Examples of grinding parameters for the second grinding table include a table rotation rate of 103 rpm, a grinding head pressure of 3 psi, and the use of an IC-1010 grinding mill. In addition, the substrate can optionally be subjected to short initial steps, such as about 5 seconds, a relatively high pressure (such as 3 psi), and a platform rotation rate (such as 103 rpm). The grinding process performed at the third grinding table 22c is performed by an optical monitoring system, and is continued until the resist layer is substantially removed, and the bottom dielectric layer is substantially exposed. The same polishing slurry can be used on the first and second polishing tables, but a different polishing slurry can be used on the third polishing table. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Another flowchart of a method for grinding a metal layer (such as a copper layer) is shown in Figure 13, and the method is similar to the method shown in Figure 12. However, in this method, both the fast and slow grinding steps are performed on the first grinding table, the removal of the barrier layer is performed on the second grinding table 22b, and the final grinding table 22c is performed as a smoothing step. The swirling and optical monitoring systems described above can be used in a wide range of grinding systems. The relative movement between the ground surface and the base can be ground and ground. Page 30 This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 496812 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation () The head or both are moved to achieve it. The grinding pad may be a round pad (or other shaped pad) fixed to the platform, a string of tape extending between the supply and shrinking reels, or a continuous tape. The grinding mill can be fixed to a platform and moved progressively on the platform between grinding operations, or it can be continuously driven on a flat floor while grinding. The polishing pad can be fixed to the platform during grinding, or a fluid thrust can be stored between the platform and the polishing pad during grinding. The abrasive pad may be a standard (such as polyimide with or without filler) rough pad, a soft pad < a pad having abrasive particles therein. The driving frequency of the oscillator may not be tuned when the substrate is absent, it may be tuned to a resonant frequency when the ground or unground substrate is present (presence or absence of the grinding head), or tuned to Other reference frequencies. Although both the optical surveillance system 140 and the cyclone surveillance system 40 are placed in the same hole, the two can actually be located at different places on the platform. For example, the optical surveillance system 40 and the cyclone surveillance system 40 can be placed on opposite sides of the platform so that both can scan the substrate surface in another way. See Figure 14. The figure shows another implementation, where the first grinding table contains only a vortex monitoring system 40 and no optical monitoring system. At this time, the portion 36 of the polishing pad does not need to be transparent, but it is preferably relatively thin. For example, assuming that the polishing pad is a double-layered pad, the thin convoluted portion 36 can be constructed as shown in FIG. 15A, that is, the portion 33 'of the support layer 32' is removed. In addition, the thin pad portion 36 "can also be achieved by removing the portion 33, which is a part of the supporting floor 32" and the blanket cover 34 ". Therefore, in this implementation method, the thin Pad part 36, within page 31 -------------- *-^ III (Please read the precautions on the back before filling out this page) 496812 A7 B7 V. Description of the invention () There is a recess in the bottom surface of the blanket cover 34 ". If the polishing pad is a single-layer pad, the thin pad portion 36 may be formed by removing a portion of the pad material to form a recess in the bottom surface of the pad; if the polishing pad itself is sufficiently thin or The pad does not need any modification or recess when it has a permeability (and conductivity) that does not interfere with the swirl measurement. Find this way when the user of a flu detector is a single coil. Many aspects of the moon are still applicable, such as the coil placed on the side of the calendar surface opposite the substrate 'or the measurement of the phase difference. In a single coil system, the oscillator and the sensing capacitor (and other sensing circuits) are connected to the same coil. The above description is only the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Therefore, the modifications or changes made by using these embodiments will not depart from the scope stated in the scope of the appended patents. 'The scope of the present invention is based on the scope of patent applications described later. ............... i ...................... ^ (Please read the notes on the back before filling this page) Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives Page 2 3 0 Public 97 2 X ο 21 Regulation 4 AS) N (C

Claims (1)

A8B8C8D8 496812 六、申請專利範圍 1 · 一種感測器，用以監視一基材上之一導電層，該感測器 至少包含： 一軸心，可位於靠近該基材之處； 一第一線圈，纏繞於該軸心之一第一部份上； 一振盪器，在電性上耦合至該第一線圈，以在該第 一線圈中感生一交流電流，並在該基材附近產生一交變 磁場； 一第二線圈，纏繞在該軸心之一第二部份上； 一電容，電性上耦合至該第二線圈；及 一放大器，在電性上耦合至該第二線圈及該電容， 以產生一輸出訊號。 2 ·如申請專利範圍第1項所述之感測器，其中該振盪器感 生一交流電流，該交流電流之頻率選擇成能在該基材不 在該軸心之附近時提供一共振頻率。 3 ·如申請專利範圍第1項所述之感測器，其中該軸心本質 上由亞鐵鹽組成。 4.如申請專利範圍第1項所述之感測器，其中該軸心包含 兩分支及一連接部份，其中該連接部份位於該兩分支之 間。 5 ·如申請專利範圍第4項所述之感測器，其中該第一線圈 第3頂 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------Ί-裝---------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Α8 Β8 C8 D8 而該第二線圈則總繞於該兩分 申請專利範1¾ 纏繞於該連接部份之上 支之至少一者之上β 6·如申請專利範圍第 β ^ g，其中該第二線圈 1唄所述之感測姦 ' 及該電谷並聯。 7. 如申請專利範圍帛！項所述之感測器，其中該感測器位 於一與該基材相對立之岍磨塾的-側上。 8. 如申請專利範圍帛7項所述之感测器，其中該研磨塾包 含一上層及一下居，而 上A螘軸心旁之該下層 Γ ^，而一孔洞形成於该押 的至少一部份内。 9. 如申請專利範圍第1項所述之感測器，其中更包含一電 腦，用以接收該輪出訊號。 10. —種化學機械研磨設備，該設備至少包含： 一研磨墊； 一研磨頭，用以握住一基材，並使該基材靠住該研 磨表面之一第一側； 一漩流感測器，包含至少一電感、一振盪器及一電 容，其中該至少一電感位於該基材對面之研磨墊的一第 二側上，該振盪器電性耦合至該至少一電感’以在該線 圈内感生一交流電流，並產生一交變磁場’而該電容在 第34頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .....................· ......$ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 496812 ABCD 經濟部智慧財產局員工消費合作社印製 力、申請專利範圍 電性上耦合至該至少一電感；及 一馬達，耦合至該研磨墊及該研磨頭之至少一者， 以在該兩者之間形成相對移動現象。 11 ·如申請專利範圍第10項所述之設備，其中更包含一平 檯，用以支撐該研磨墊。 12·如申請專利範圍第1 1項所述之設備，其中該至少一電 感位於該平檯之一頂表面内的一凹處中。 13.如申請專利範圍第π項所述之設備，其中該平檯是旋 轉的。 1 4 ·如申請專利範圍第1 3項所述之設備，其中更包含一位 置感測器及一控制器，其中該位置感測器用以決定該平 檯之一角位置，而該控制器用以在該至少一電感位於該 基材之旁時對該漩流感測器取樣。 1 5 ·如申請專利範圍第1 〇項所述之設備，其中該凹處位於 該研磨塾之第二側内。 16·如申請專利範圍第15項所述之設備，其中該研磨墊包 含一毯覆層、一支撐層及一凹處’其中該毯覆層位於該 研磨墊之第一側上，該支撐層位於該研磨塾之第二層 第35頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱) ............. ..............^ (請先閱讀背面之注意事項再填寫本頁) 496812 A8 B8 C8 D8 申請專利範圍 上，而該凹處之形成係利用將該支撐層之一部份加以移 除的方式為之。 (請先閲讀背面之注意事項再填寫本頁) 17·如申請專利範圍第15項所述之設備，其中該旋流感測 器包含一軸心，該軸心具有兩極，並位於該研磨墊之凹 處旁，且該至少一電感纏繞於該軸心的一第一部份上。 18·如申請專利範圍第10項所述之設備，其中該旋流感測 器包含一軸心，而該至少一電感包含第一電感及一第二 電感’其中該第一電感纏繞於該軸心的一第一部份之 上，而該第二電感則纏繞於該軸心之一第二部份之上。 19·如申請專利範圍第ι8項所述之設備，其中該振盪器在 電性上耦合至該第一線圈，以在該第一線圈之内感生一 交變電流。 20. 如申請專利範圍第19項所述之設備，其中該電容在電 性上耦合至該第二線圈。 經濟部智慧財產局員工消費合作社印製 21. 如申請專利範圍第10項所述之設備，其中該振盪器感 生之一交變電流的頻率被選擇成能在該基材不靠近該 '轴心時提供一共振頻率者。 22. 如申請專利範圍第21項所述之設備，其中更包含一終 第36頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 經濟部智慧財產局員工消費合作社印製 496812 A8 B8 C8 D8 _______ — /、、申M專利範圍 點偵測系統，以從該旋流感測器接收-輸出訊號該、、 點偵測系統用以在該輸出訊號超過一預疋之臨界值時 發出一研磨終點到來之訊號。 23·—種在研磨動作進行期間鍪視一基材之導電層之厚 度的方法，該方法至少包含： 玫置一基材於一研磨表面之一第一側上； 由-電感產生一交變磁場，其中該電感位於該基材 對面之研磨表面之一第二側上，該磁場延伸通過該研磨 表面以在該導電層内感生漩流’及 偵測由該導電層之厚度改變所造成之該交變磁場的 改變。 24·如申請專利範圍第23項所述之方法，其中由一電感產 生該交變磁場的步驟包含驅動一具有一第一頻率之一 振盪器的第一線圈的步驟。 25. 如申請專利範圍第24項所述之方法，其中該第一頻率 在該基材不靠近該磁場時為/共振頻率。 26. 如申請專利範圍第24項所述之方法，其中偵測該交變 磁場之改變量的步驟包含以一第二線圈感測該交變磁 場之步驟。 第37頁 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) ------------- I I ---------Ίβ (請先閲讀背面之注意事項再^寫本頁> 496812 A B CD ^、申請專利範圍 27.如申請專利範圍第26項所述之方法，其中該第二線圈 與一電容並聯。 (請先閲讀背面之注意事項再填寫本頁) 2 8.如申請專利範圍第26項所述之方法，其中該第一線圈 纏繞於一轴心之一第一部份之上，而該第二線圈則纏繞 於該軸心之一第二部份之上。 29.如申請專利範圍第23項所述之方法，其中更包含決定 該電感何時與該基材相鄰之步驟。 3 0.如申請專利範圍第23項所述之方法，其中由一電感產 生一交變磁場的步驟包含以一第一訊號驅動該電感的 步驟，而偵測該交變磁場之改變量的步驟則包含從該交 變磁場產生一第二訊號的步驟。 3 1.如申請專利範圍第30項所述之方法，其中更包含決定 該第二訊號之振幅改變量的步驟。 經濟部智慧財產局員工消費合作社印製 32. 如申請專利範圍第30項所述之方法，其中更包含決定 該第一訊號及該第二訊號間之相位差改變量的步驟。 33. —種化學機械研磨方法，該方法至少包含下列步驟： 放置一具有一導電層之基材於一研磨表面之一第一 側上的步驟； 第38頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 2 1X 8 6 9 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 產生一交變磁場，由一位於該基材對面之研磨表面 的〆第二側上之電感產生之，其中該磁場延伸通過該研 磨表面，以在該導電層内感生漩流； 形成該基材與該研磨表面間的相對移動’以研磨該 導電層； 感測該基材内之旋流；及 在該受感測之旋流呈現出一終點臨界強度時停止該 研磨動作° 34如申請專利範圍第33項所述之方法，其中該偵終點臨 界值至少包含通過一臨界強度之旋流訊號。 35. 如申請專利範圍第33項所述之方法，其中該終點臨界 強度至少包含訊號斜度已變平的旋流訊號。 36. —種化學機械研磨設備，該設備至少包含： 一研磨墊，具有一研磨表面； 一研磨頭，用以握住一基材並使該基材靠住該研磨 表面； 一馬達，耦合至該研磨墊及研磨頭之至少一者，以 在該研磨墊及該研磨頭之間形成相對移動情形；及 一導電層厚度監視系統，包含至少一電感、電流源 感測電路、及一相位比較電路，其中該電流源產生一驅 動訊號，並在電性上耦合至該至少一電感，以在該至少 第39頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公楚) ............^---------.....^ (請先閲讀背面之注意事項再填寫本頁) 496812 A B CD 々、申請專利範圍 (請先閲讀背面之注意事項再填寫本頁) 一電感中感生一交變電流，並產生一交變磁場，該感測 電路包含一電容，該電容在電性上耦合至該至少一電 感，以感測該交變磁場，並產生一感測訊號，而該相位 比較電路耦合至該電流源及該感測電路，以測量該感測 訊號及該驅動訊號間的相位差。 3 7.如申請專利範圍第3 6項所述之設備，其中更包含至少 一第一閘，以將該電感發出的弦波訊號轉變成第一及第 二方波訊號。 3 8.如申請專利範圍第37項所述之設備，其中該至少一第 一閘為一 XOR閘。 3 9.如申請專利範圍第3 7項所述之設備，其中更包含一比 較器，用以對該第一方波訊號及該第二方波訊號加以比 較，以產生一第三方波訊號。 40. 如申請專利範圍第3 9項所述之設備，其中該比較器為 一 XOR 閘。 經濟部智慧財產局員工消費合作社印製 41. 如申請專利範圍第39項所述之設備，其中更包含一濾 波器，用以將談第三方波訊號轉便成差動訊號，其中該 差動訊號之振幅正比於該第一及第二方波訊號之相位 差。 第40頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 496812 A BCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 42. 如申請專利範圍第3 6項所述之設備，其中該相位比較 電路產生一訊號，且該訊號之工作週期正比於該相位 差。 43. —種在一化學機械研磨動作期間監視一基材上一導電 層之厚度的方法，該方法至少包含下列步驟： 以一第一訊號對一線圈加以一能量，以產生一交變 磁場，該交變磁場包含該基材之一導電層中的漩流； 測量該交變磁場，並產生一第二號號，其中該第二 訊號為該交變磁場之指示訊號；及 比較該第一及第二訊號，以決定該兩訊號之相位 差。 44. 一種化學機械研磨設備，該設備至少包含： 一研磨墊； 一研磨頭，用以握住一基材並使該基材抵住該研磨 表面之一第一側； 一旋流監視系統，用以在靠近該基材處產生一交變 磁場； 一光學監視系統，用以產生一光束及偵測該光束從 該基材之反射； 一控制器，用以接收從該漩流監視系統及該光學監 視系統所發出之訊號； 第41頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) .....................、可.........^ (請先閲讀背面之注意事項再填寫本頁) AS B8 C8A8B8C8D8 496812 6. Application scope 1. A sensor for monitoring a conductive layer on a substrate. The sensor at least includes: an axis center which can be located near the substrate; a first coil Is wound on a first part of the axis; an oscillator is electrically coupled to the first coil to induce an alternating current in the first coil and generate an An alternating magnetic field; a second coil wound around a second portion of the axis; a capacitor electrically coupled to the second coil; and an amplifier electrically coupled to the second coil and This capacitor is used to generate an output signal. 2. The sensor according to item 1 of the scope of patent application, wherein the oscillator induces an AC current, and the frequency of the AC current is selected to provide a resonance frequency when the substrate is not near the axis. 3. The sensor according to item 1 of the scope of patent application, wherein the axis is essentially composed of a ferrous salt. 4. The sensor according to item 1 of the scope of patent application, wherein the axis includes two branches and a connecting portion, and the connecting portion is located between the two branches. 5 · The sensor as described in item 4 of the scope of patent application, wherein the third paper sheet of the first coil is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------- ---- Ί-installation --------- order --------- line (please read the precautions on the back before filling this page) Α8 Β8 C8 D8 and the second coil is always wound around the two-point application patent range 1¾ wound on at least one of the branches above the connecting part β 6 · If the scope of patent application is β ^ g, where the first The two sense coils described above are connected in parallel with the electric valley. 7. If the scope of patent application is 帛! The sensor according to the above item, wherein the sensor is located on a-side of a honing pad opposed to the substrate. 8. The sensor according to item 7 of the patent application scope, wherein the grinding pad includes an upper layer and a lower layer, and the lower layer Γ ^ beside the upper A ant axis, and a hole is formed in at least one of the bees. Within the section. 9. The sensor according to item 1 of the scope of patent application, further comprising a computer for receiving the outgoing signal. 10. A chemical mechanical polishing device, the device at least comprising: a polishing pad; a polishing head for holding a substrate and holding the substrate against a first side of the polishing surface; Device, including at least one inductor, an oscillator, and a capacitor, wherein the at least one inductor is located on a second side of the polishing pad opposite the substrate, and the oscillator is electrically coupled to the at least one inductor ′ to connect the coil An AC current is induced inside and an alternating magnetic field is generated ', and the capacitor is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) on page 34 of this paper size ......... ......... · ...... $ (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumption Cooperative of the Ministry of Economy 496812 ABCD Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economy A printing force and a patented range are electrically coupled to the at least one inductor; and a motor is coupled to at least one of the polishing pad and the polishing head to form a relative movement phenomenon between the two. 11 The device according to item 10 of the patent application scope, further comprising a platform for supporting the polishing pad. 12. The device according to item 11 of the scope of patent application, wherein the at least one inductor is located in a recess in a top surface of the platform. 13. The device according to item π of the patent application scope, wherein the platform is rotating. 1 4 · The device as described in item 13 of the scope of patent application, further comprising a position sensor and a controller, wherein the position sensor is used to determine an angular position of the platform, and the controller is used to When the at least one inductor is located beside the substrate, the swirl detector is sampled. 15 · The device according to item 10 of the patent application scope, wherein the recess is located in the second side of the grinding pad. 16. The device according to item 15 of the scope of patent application, wherein the polishing pad includes a blanket cover, a support layer and a recess' wherein the blanket cover is located on the first side of the polishing pad, the support layer Located on the second layer of the grinding mill, page 35. This paper size applies to China National Standard (CNS) A4 specification (210X297 public love) ............... ..... ^ (Please read the notes on the back before filling in this page) 496812 A8 B8 C8 D8 The scope of the patent application, and the formation of the recess is by removing a part of the support layer For it. (Please read the precautions on the back before filling out this page) 17. The device described in item 15 of the scope of patent application, wherein the influenza detector includes a shaft center, the shaft center has two poles, and is located on the polishing pad. Beside the recess, and the at least one inductor is wound on a first part of the shaft center. 18. The device according to item 10 of the scope of application for a patent, wherein the influenza detector includes an axis, and the at least one inductor includes a first inductor and a second inductor, wherein the first inductor is wound around the axis A second part of the axis, and the second inductor is wound around a second part of the axis. 19. The device according to item 8 of the scope of the patent application, wherein the oscillator is electrically coupled to the first coil to induce an alternating current within the first coil. 20. The device as described in claim 19, wherein the capacitor is electrically coupled to the second coil. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 21. The device as described in item 10 of the scope of patent application, wherein the frequency of an alternating current induced by the oscillator is selected so that the substrate is not close to the 'axis Those who provide a resonance frequency in the heart. 22. The device as described in the scope of application for patent No. 21, which includes a page 36. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). Printed by the Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative. 496812 A8 B8 C8 D8 _______ — / ,, apply for M patent range point detection system to receive-output signals from the influenza detector, the point detection system is used when the output signal exceeds a predetermined threshold A signal of the arrival of the end of grinding is issued from time to time. 23 · —A method of defying the thickness of the conductive layer of a substrate during the grinding operation, the method at least comprises: placing a substrate on a first side of a grinding surface; A magnetic field, where the inductor is located on a second side of the abrasive surface opposite the substrate, the magnetic field extends through the abrasive surface to induce a swirling current in the conductive layer, and detect the change caused by the thickness of the conductive layer This changes in the alternating magnetic field. 24. The method of claim 23, wherein the step of generating the alternating magnetic field from an inductor includes the step of driving a first coil having an oscillator with a first frequency. 25. The method of claim 24, wherein the first frequency is a / resonant frequency when the substrate is not close to the magnetic field. 26. The method of claim 24, wherein the step of detecting a change amount of the alternating magnetic field includes a step of sensing the alternating magnetic field by a second coil. Page 37 This paper size applies to China National Standard (CNS) A4 (210 × 297 mm) ------------- II --------- Ίβ (Please read the back first Precautions ^ Write this page > 496812 AB CD ^ Patent application scope 27. The method described in item 26 of the patent application scope, wherein the second coil is connected in parallel with a capacitor. (Please read the precautions on the back first (Fill in this page again) 2 8. The method as described in item 26 of the scope of patent application, wherein the first coil is wound on a first part of an axis and the second coil is wound on the axis One on the second part. 29. The method as described in item 23 of the scope of patent application, which further includes a step of determining when the inductor is adjacent to the substrate. 3 0. As described in area 23 of the scope of patent application The method described above, wherein the step of generating an alternating magnetic field from an inductor includes the step of driving the inductor with a first signal, and the step of detecting a change amount of the alternating magnetic field includes generating a second from the alternating magnetic field. Step of the signal. 3 1. The method described in item 30 of the scope of patent application, which further includes determining the Steps for changing the amplitude of the second signal. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 32. The method described in item 30 of the scope of patent application, which further includes determining the phase difference between the first signal and the second signal Steps for changing the amount. 33. A chemical mechanical polishing method, the method includes at least the following steps: the step of placing a substrate with a conductive layer on a first side of a polishing surface; page 38. This paper size applies China National Standard (CNS) A4 specification (210X 297 mm) 2 1X 8 6 9 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of patent application generates an alternating magnetic field, which is ground by a grinding located on the opposite side of the substrate The inductance on the second side of the surface is generated, wherein the magnetic field extends through the abrasive surface to induce swirling current in the conductive layer; forming a relative movement between the substrate and the abrasive surface 'to grind the conductive layer ; Sensing the swirling flow in the substrate; and stopping the grinding action when the sensed swirling flow exhibits an end point critical intensity ° 34 such as the scope of patent application No. 33 The method described above, wherein the detection endpoint critical value includes at least a swirl signal passing a critical intensity. 35. The method described in item 33 of the patent application scope, wherein the endpoint critical intensity includes at least a spiral whose signal slope is flattened Stream signal. 36. A chemical mechanical polishing device, the device at least comprises: a polishing pad having a polishing surface; a polishing head for holding a substrate and the substrate against the polishing surface; a motor Coupled to at least one of the polishing pad and the polishing head to form a relative movement situation between the polishing pad and the polishing head; and a conductive layer thickness monitoring system including at least an inductor, a current source sensing circuit, and A phase comparison circuit in which the current source generates a driving signal and is electrically coupled to the at least one inductor to apply the Chinese National Standard (CNS) A4 specification (210X297 cm) on this paper size at least page 39 ............ ^ ---------..... ^ (Please read the notes on the back before filling out this page) 496812 AB CD 々 、 Scope of patent application ( Please read the notes on the back first (Write this page) An inductor induces an alternating current and generates an alternating magnetic field. The sensing circuit includes a capacitor, which is electrically coupled to the at least one inductor to sense the alternating magnetic field. A sensing signal is generated, and the phase comparison circuit is coupled to the current source and the sensing circuit to measure a phase difference between the sensing signal and the driving signal. 37. The device according to item 36 of the scope of patent application, further comprising at least a first brake to convert the sine wave signal from the inductor into first and second square wave signals. 3 8. The device according to item 37 of the scope of patent application, wherein the at least one first gate is an XOR gate. 39. The device as described in item 37 of the scope of patent application, further comprising a comparator for comparing the first-party wave signal and the second-party wave signal to generate a third-party wave signal. 40. The device as described in claim 39, wherein the comparator is an XOR gate. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 41. The device described in item 39 of the scope of patent application, which further includes a filter to convert the third-party wave signal into a differential signal, where the differential The amplitude of the signal is proportional to the phase difference between the first and second square wave signals. Page 40 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 496812 A BCD Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economy Equipment, wherein the phase comparison circuit generates a signal, and the duty cycle of the signal is proportional to the phase difference. 43. A method for monitoring the thickness of a conductive layer on a substrate during a chemical mechanical grinding operation, the method comprising at least the following steps: applying energy to a coil with a first signal to generate an alternating magnetic field, The alternating magnetic field includes a swirling current in a conductive layer of the substrate; the alternating magnetic field is measured and a second signal is generated, wherein the second signal is an indication signal of the alternating magnetic field; and the first signal is compared; And the second signal to determine the phase difference between the two signals. 44. A chemical mechanical polishing device, the device comprising at least: a polishing pad; a polishing head for holding a substrate and holding the substrate against a first side of the polishing surface; a swirl monitoring system, For generating an alternating magnetic field near the substrate; an optical monitoring system for generating a light beam and detecting the reflection of the light beam from the substrate; a controller for receiving from the swirling current monitoring system and The signal sent by the optical surveillance system; page 41 This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) .......... . 、 Yes ......... ^ (Please read the notes on the back before filling this page) AS B8 C8 經濟部智慧財產局員工消費合作社印製 申請專利範圍 一馬達，耦合至該研磨墊及研磨頭之至少一者，用 以在該研磨墊及研磨頭之間形成相對移動。 45·如申請專利範圍第44項所述之研磨設備，其中該漩流 監視系統包含一電感，立該電感位於該基材對面之研磨 墊的一第二側上。 46. 如申請專利範圍第45項所述之研磨設備，其中該電感 位於該研磨墊下方之一平檯的一腔穴中。 參 47. 如申請專利範圍第44項所述之研磨設備，其中該光學 監視系統包含一光源及一光偵測器，位於該基材對面之 研磨墊的一第二側上。 4 8 ·如申請專利範圍第4 7項所述之研磨設備，其中該光源 及光偵測器位於該研磨墊下之一平檯的一第一腔穴 中。 4 9 ·如申請專利範圍第4 8項所述之研磨設備，其中該旋流 監視系統包含一電感，且該電感位於該平檯之第一腔穴 中。 50.如申請專利範圍第48項所述之研磨設備，其中該漩流 監視系統包含一電感，且該電感位於該平檯之一第二腔 第4頂 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) —............ ¥............... (請先閱讀背面之注意事項再填寫本頁) ABCD 496812 六、申請專利範圍 、 穴中，其中該第一腔穴與該第二腔穴彼此相隔。 5 1 ·如申請專利範圍第4 7項所述之研磨設備，其中該旋流 監視系統包含一電感，且該電感位於該基材對面之研磨 墊的一第二側上。 5 2 ·如申請專利範圍第4 4項所述之研磨設備，其中該旋流 監視系統及該光學監視系統用以監視該基材上大致相 同之徑向位置。 5 3 ·如申請專利範圍第4 4項所述之研磨設備，其中該控制 器用以偵測該旋流監視系統及該光學監視系統所發出 之訊號的終點臨界值。 54.—種化學機械研磨之方法，該方法至少包含下列步驟： 放置一基材於一研磨表面之一第一側上； 形成相對之移動於該基材及該研磨表面之間，以對 該基材進行研磨； 產生一第一訊號，由一旋流監視系統產生之； 產生一第二訊號，由一光學監視系統產生之；及 監視該第·一及第二訊號’以求得終點臨界到來之 時。 55·如申請專利範圍第54項所述之方法，其中更包含在終 點臨界已由該第一及第二訊號偵測得時停止研磨動作 的步驟。 56·如申請專利範圍第54項所述之方法，其中更包含在— 第43頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱) ‘：裝.........訂：：：：-線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 2 1X 8 6 9 4 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 終點臨界已為該第一或第二訊號偵測得時停止該研磨 動作的步驟。 5 7.如申請專利範圍第54項所述之方法，其中該基材包含 一金屬層，而該監視步驟包含監視從該旋流監視系統發 出之訊號直至該金屬層抵至一預定厚度，及接著監視從 該光學監視系統所發出之訊號的步驟。 58·—種以化學機械研磨方式研磨一基材上之一金屬層的 方法，該方法至少包含下列步驟： 研磨該基材，於一第一研磨台上以一第一速率研磨 之，其中該第一研磨台具有一第一研磨表面； 監視在該第一研磨台上的研磨動作，以一漩流監視 系統監視之； 轉送該基材至一第二研磨台，在該漩流監視系統指 出該基材上剩下之金屬層厚度為一預定厚度時轉送 之； 研磨該基材，於該第二研磨台上以一第二研磨速率 研磨之，其中該第二研模台具有一第二研磨表面，且該 第二研磨速率低於該第一研磨速率； 監視在該二研磨台之研磨動作，以一光學監視系統 監視之；及 停止研磨動作，在該光學監視系統指出一第一底層 至少部份暴出時停止之。 59·如申請專利範圍第項所述之方法，其中該第一底層 為一阻障層。 第44頁 本紙張尺度適用中國國家標準(CNS)A4規格(2U)x297公釐） ...........…4.........、可.........^ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 496812 Α8 Β8 C8 ----- D8 夂、申請專利範圍 60,如申凊專利範圍第59項所述之方法，其中更包含轉送 該基材至一第三研磨台及以一第三研磨表面研磨該基 材之步驟。 61·如申請專利範圍第6〇項所述之方法，其中更包含以一 第二光學監視系統監視在該第三研磨台之研磨動作，及 在該第二光學監視系統指出一第二底層至少部份暴出 時停止研磨動作的步驟。 62·如申請專利範圍第項所述之方法，其中在該第三研 磨台的研磨動作持續直至該第二底層大致完全暴出。 6 3.如申請專利範圍第58項所述之方法，其中在該第二研 磨台之研磨動作持續直至該第一底層大致完全暴出。 64. 如申請專利範圍第58項所述之方法，其中在該第二研 磨台研磨該基材的動作包含一起始研磨步驟，在該起始 研磨步驟中研磨的壓力較在該第二研磨台上其餘的研 磨時段裡者為高。 65. —種以化學機械研磨方式研磨一基材上之一金屬層的 方法，該方法至少包含下列步驟： 研磨該基材，於一第一研磨上以一第一研磨速率研 磨之，其中該第一研磨台具有一第一研磨表面； 監視在該第一研磨台之研磨動作，以一漩流監視系 統為之， 降低在該第一研磨台之研磨速率，在該漩流監視系 統指出該基材上之金屬層厚度抵至一預定厚度時降低 第45頁 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公變) ............…裝.........,π.........^ (請先閱讀背面之注意事項再填寫本買) 496812 A.BCD 六、申請專利範圍 之； 監視在該第一研磨台之斫磨動作，以一光學龄視系 統監視之；及 p 停止研磨動作，在該光學監視系統指出一第一底層 至少部份暴出時停止之β — 66.如申請專利範圍第65項所述之方法，其中該第一底層 為一阻障層。 一 67·如申請專利範圍第65項所述之方法，其中更包含轉送 該基材至一第二研磨台及以一第二研磨表面研磨該基 材之步驟。 68·如申請專利範圍第67項所述之方法，其中更包含以/ 第一光學監視系統監視在該第一研磨台之研磨動作的 步驟，及在該第二光學監視系統指出一第二底層至少部 份暴出時停止研磨動作的步驟。 69·如申請專利範圍第68項所述之方法，其中更包含轉送 該基材至一第三研磨台及以一光滑表面光滑該基材之 步驟。 經濟部智慧財產局員工消費合作社印製 斫 二 。 第出 該暴 在部 中全 其致 ，大 法層 方底 之一 述第 所該 項至 5 直 6續 第持 圍作 範動 利磨 專研 請之 申台 如磨 種 法 方 研 的 層 屬 金 1 之 上 ； 材 之 基 磨 一驟矹 磨f率 研i速 #含第 2 ΜΛ- 研、以二， ^ ^ # 學 基 匕方該 彳該I 以 磨 頁 46 第 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱) 496812 ABCD 六、申請專利範圍 監視研磨動作，以一漩流監視系統監視之； 降低該研磨速率，該該旋流監視系統指出該基材上 所剩下的金屬層厚度為一預定厚度時降低之；及 停止研磨動作，在該光學監視系統指出一底層至少 部份暴出時停止之。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 頁 47 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐)Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economics. Patent Application Scope A motor is coupled to at least one of the polishing pad and the polishing head to form a relative movement between the polishing pad and the polishing head. 45. The polishing device according to item 44 of the scope of the patent application, wherein the vortex monitoring system includes an inductor, and the inductor is located on a second side of the polishing pad opposite the substrate. 46. The polishing device according to item 45 of the scope of patent application, wherein the inductor is located in a cavity of a platform below the polishing pad. See 47. The polishing equipment as described in item 44 of the patent application, wherein the optical monitoring system includes a light source and a light detector on a second side of the polishing pad opposite the substrate. 48. The polishing device according to item 47 of the scope of patent application, wherein the light source and the light detector are located in a first cavity of a platform under the polishing pad. 4 9 · The grinding device as described in item 48 of the scope of patent application, wherein the swirl monitoring system includes an inductor, and the inductor is located in the first cavity of the platform. 50. The grinding equipment according to item 48 of the scope of the patent application, wherein the vortex monitoring system includes an inductor, and the inductor is located in one of the second cavity and the fourth cavity of the platform. The paper size is applicable to the Chinese National Standard (CNS). A4 specification (210X297mm) —............ ¥ ............... (Please read the precautions on the back before filling this page) ABCD 496812 6. In the scope of patent application, the first cavity and the second cavity are separated from each other. 51. The polishing device as described in item 47 of the scope of patent application, wherein the swirl monitoring system includes an inductor, and the inductor is located on a second side of the polishing pad opposite the substrate. 5 2 · The grinding equipment according to item 44 of the scope of patent application, wherein the swirl monitoring system and the optical monitoring system are used to monitor substantially the same radial position on the substrate. 53. The grinding equipment according to item 44 of the scope of the patent application, wherein the controller is used to detect the end point threshold value of the signals sent by the swirl monitoring system and the optical monitoring system. 54. A method of chemical mechanical polishing, the method includes at least the following steps: placing a substrate on a first side of a polishing surface; forming a relative movement between the substrate and the polishing surface to The substrate is ground; a first signal is generated by a cyclone monitoring system; a second signal is generated by an optical monitoring system; and the first and second signals are monitored to obtain the end point threshold When it comes. 55. The method according to item 54 of the scope of patent application, further comprising the step of stopping the grinding operation when the end point threshold is detected by the first and second signals. 56 · The method as described in item 54 of the scope of patent application, which further includes-page 43 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public love) ': installed ... Order ::::-line (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 1X 8 6 9 4 ABCD Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The end point threshold of the patent application range is a step of stopping the grinding action when the first or second signal is detected. 5 7. The method according to item 54 of the scope of patent application, wherein the substrate comprises a metal layer, and the monitoring step comprises monitoring a signal emitted from the cyclone monitoring system until the metal layer reaches a predetermined thickness, and The steps of monitoring the signal from the optical monitoring system are then followed. 58 · —A method for grinding a metal layer on a substrate by chemical mechanical polishing, the method includes at least the following steps: grinding the substrate, grinding it on a first grinding table at a first rate, wherein the The first grinding table has a first grinding surface; the grinding action on the first grinding table is monitored by a vortex monitoring system; the substrate is transferred to a second grinding table, and the vortex monitoring system indicates The remaining metal layer on the substrate is transferred when the thickness is a predetermined thickness; the substrate is ground and ground on the second grinding table at a second grinding rate, wherein the second grinding table has a second Grinding the surface, and the second grinding rate is lower than the first grinding rate; monitoring the grinding action on the two grinding tables, monitoring it with an optical monitoring system; and stopping the grinding action, pointing a first bottom layer in the optical monitoring system Stop at least partly when it broke out. 59. The method according to item 1 of the patent application, wherein the first bottom layer is a barrier layer. Page 44 This paper size applies to Chinese National Standard (CNS) A4 (2U) x 297 mm) ........... 4 ......... ..... ^ (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 496812 Α8 Β8 C8 ----- D8 夂, patent application scope 60, such as applying for a patent The method according to item 59, further comprising the steps of transferring the substrate to a third grinding table and grinding the substrate with a third grinding surface. 61. The method according to item 60 of the scope of patent application, further comprising monitoring a grinding action on the third grinding table by a second optical monitoring system, and indicating that a second bottom layer at least in the second optical monitoring system Steps to stop the grinding action when some bursts occur. 62. The method according to item 1 of the scope of patent application, wherein the grinding action on the third grinding table is continued until the second bottom layer is substantially completely burst. 6 3. The method according to item 58 of the scope of patent application, wherein the grinding action on the second grinding table is continued until the first bottom layer is almost completely burst. 64. The method according to item 58 of the scope of patent application, wherein the action of grinding the substrate on the second grinding table includes an initial grinding step, and the pressure of grinding in the initial grinding step is higher than that on the second grinding table. It is high during the remaining grinding periods. 65. A method of grinding a metal layer on a substrate by chemical mechanical polishing, the method comprising at least the following steps: grinding the substrate, grinding it on a first grinding at a first grinding rate, wherein the The first grinding table has a first grinding surface; the grinding action on the first grinding table is monitored, and a swirl flow monitoring system is used to reduce the grinding rate on the first grinding table, and the swirl flow monitoring system indicates that The thickness of the metal layer on the substrate is reduced to a predetermined thickness. Page 45 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 public change) ............... ........, π ......... ^ (Please read the precautions on the back before filling in this purchase) 496812 A.BCD 6. The scope of patent application; monitoring in the first grinding The honing action of the platform is monitored by an optical age vision system; and p stops the grinding action, and β is stopped when the optical monitoring system indicates that a first bottom layer is at least partially burst. 66. If the scope of patent application is 65 In the method, the first bottom layer is a barrier layer. A 67. The method according to item 65 of the scope of patent application, further comprising the steps of transferring the substrate to a second grinding table and grinding the substrate with a second grinding surface. 68. The method according to item 67 of the patent application scope, further comprising the step of monitoring the grinding action on the first grinding table with a first optical monitoring system, and pointing a second bottom layer on the second optical monitoring system The step of stopping the grinding action at least partially when it bursts. 69. The method of claim 68, further comprising the steps of transferring the substrate to a third grinding table and smoothing the substrate with a smooth surface. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The first outbreak of the violence is in the ministry, and one of the Dafa levels described the first to the 5th and the 6th consecutive continuation of the holding of the application by the Fan Mo Li Mo special research. Above the gold 1; the base of the material is sharpened, and the rate of grinding is fast. The speed is the same as that of the second. National Standard (CNS) A4 Specification (210X297 Public Love) 496812 ABCD 6. Apply for patent scope to monitor the grinding action and monitor it with a vortex monitoring system; To reduce the grinding rate, the vortex monitoring system indicates the remaining on the substrate The thickness of the lower metal layer is reduced when it is a predetermined thickness; and the grinding action is stopped, and the optical monitoring system is stopped when it indicates that at least a portion of the bottom layer is exposed. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 47 This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
TW090112035A 2000-05-19 2001-08-06 Eddy current sensing and optical monitoring for chemical mechanical polishing TW496812B (en)

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US09/574,008 US6924641B1 (en) 2000-05-19 2000-05-19 Method and apparatus for monitoring a metal layer during chemical mechanical polishing
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ATE315980T1 (en) 2006-02-15
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JP6041833B2 (en) 2016-12-14
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DE60116757D1 (en) 2006-04-06
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DE60116757T2 (en) 2006-07-27
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