經濟部智慧財產局員工消費合作社印製 492229 A7 _ B7 五、發明説明（彳） 本發明係關於使用波長變換元件進行波長變換，將波 長變換光照射於多屬印刷板等之被加工物以進行加工之加 工用雷射裝置。 印刷基板之通路孔穿設，薄膜·金屬之切斷等加工乃 使用雷射光進行。 近年，又由於細緻加工之需求將加工所用雷射光予以 短波長化。而短波長雷射光之產生則採用利用非線性光學 結晶之波長變換方式較爲有效。 圖9爲顯示藉利用非線形光學結晶之波長變換以進行 加工之加工用雷射裝置1 〇槪略構造。 自雷射光源1 1射出之雷射光經由聚光透鏡1 2予以 聚光射入於非線性光學結晶1 3。射入於非線性光學結晶 1 3之雷射光一部份被波長變換，並自非線性光學結晶 1 3射出，其射出光又由聚光透鏡1 4加以聚光後照射被 加工物1 5。所使用非線性光學結晶1 3則有如L B〇， C L B〇等。 上述非線形光學結晶1 3已知溫度與相位配合角（雷 射光射入於結晶之角度）變化時，所輸出電射功率會變化 。因此非線性光學結晶1 3被控制爲其溫度呈一定。 非線性光學結晶1 3之溫度控制係將非線性光學結晶 1 3表面接觸以如熱電偶1 6之溫度測定元件，且將非線 性光學結晶整體以加熱器1 8等之加熱手段或派耳帖元等 之冷卻手段予以被覆。 而將熱電偶1 6之輸出輸入於溫度調節器1 7 (以下 i紙張尺度適财關家縣（CNS ) M規格（21ϋΧ 297公釐) — ----- --------^--0------1Τ------AWI (請先閱讀背面之注意事項再填寫本頁) 492229 A7 B7 五、發明説明（2 ) 稱調溫器1 7 )。調溫器1 7乃將所測定非線性光學結晶 1 3之溫度反饋爲預先設定之溫度，而控制加熱手段或冷 卻手段之輸入以調節非線性光學結晶1 3之溫度。 (請先閱讀背面之注意事項再填寫本頁} 圖9係圖示使用加熱器1 8加熱非線性光學結晶1 3 之情形’以下即就將非線性光學結晶1 3予以加熱之情形 爲例加以說明。 加工用雷射裝置1 〇之輸出則如下調整之。 ① 將非線性光學結晶1 3加熱至經設定之所定溫度， 並控制於一定溫度。再以其狀態，將自雷射光源1 1之雷 射光射入於非線性光學結晶1 3，復將經波長變換所輸出 雷射光由未圖示之功率監視器予以受光。 ② 觀察功率監視器，將非線性光學結晶1 3之相位配 合角調整至其値呈最大，以決定配置非線性光學結晶1 3 之角度。 藉上述加工用雷射裝置1 〇進行多層印刷板之通路孔 加工等時，係將雷射光由快門或Q 一 s W予以〇N / 經濟部智慧財產局員工消費合作社印製 〇F F ’以脈衝狀雷射光間歇性照射於被加工物1 5。圖 1 0爲顯示雷射光之通路孔加工情形。 如同圖（a )所示，通常一張基板上形成有多數照射 領域A 1 ’ A 2 ’ .........，而各照射領域A 1 ，A 2，… ……則設有多數穿孔部位。且將自加工用雷射裝置所發射 雷射光由檢流計等控制手段予以掃描，定位於多層印刷板 之各穿孔位置，而將脈衝狀雷射光多次照射各穿孔位置以 進行通路孔加工。 -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 492229 A7 B7 五、發明説明（3 ) (請先閲讀背面之注意事項再填寫本頁) 亦即，如同圖（d )所示，將半振全幅（峰値1 / 2 時之脈衝寬度）爲數1 0 n s〜數1 OOn s且重複頻率 爲數KHz〜數1OKHz之雷射脈衝，對領域A1之各 穿孔部份如同圖（c )所示予以多次照射進行穿孔加工， 完成一個穿孔後即將雷射光移至相同領域之其次穿孔部份 ’以同樣反覆進行穿孔操作。 且’完成領域A 1之所有穿孔後，如同圖（b )所不 ’令雷射光呈〇F F，將雷射光移動至其次領域2進行同 樣之穿孔加工。 以下同樣依序進行多層印刷板之各領域A 1 ，A 2… ……之穿孔加工，待至完成一張多層印刷基板之穿孔後， 將雷射光予以0 F F更換多層印刷板進行其次印刷板之加 工。在此，雷射之發射次數，例如對於一個穿孔乃需1〜 3 0次發射。又，圖1 〇 ( c )在雷射光開始發射後，雷 射光之大小逐漸變大，唯此則是如後述屬於非線性光學結 晶之內部溫度上昇所致之輸出變動。 經濟部智慧財產局員工消費合作社印製 如上述，將加工用雷射裝置使用於多層印刷板之通路 孔等加工時，係需將加工處理妥工件（多層印刷板）更換 爲未處理之工件，或在一個多層印刷板內將雷射光移動於 照射領域等之操作（本操作被稱謂「步驟更換」）。 此種步驟更換時間通常則需數秒至數十秒（有時需要 數分鐘）。在進行步驟更換時乃如圖1 0所示自雷射光源 不射出雷射光，而加工用雷射裝置不輸出雷射。且於步驟 更換後自雷射光源射出雷射光，對工件照射經波長變換之 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） -6- 492229 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（4 ) 雷射光。 唯在上述加工用雷射裝置，於步驟變換終了後（雷射 光發射停止期間終了後）自加工用雷射裝置所輸出經波長 變換之雷射光輸出，儘管非線性光學結晶之溫度被固定控 制於設定溫度，卻會產生於數秒至十數秒間大爲變化之現 象（功率漸漸變大）。 圖1 1爲顯不圖9雷射裝置之輸出雷射功率之變化。 同圖係以非結晶性光學結晶使用L B〇，而顯示將 L B ◦固定控制於5 5 · 1 °C之情形。如同圖所示，於雷 射射出開始値後之雷射功率雖爲4 · 2 W，唯會逐漸上昇 於約1 5秒後即達5 · 5 W，然呈略一定之輸出。亦即輸 出於1 5秒鐘的變.化2 4 %。 當雷射光之輸出如圖1 1變化，且如在通路孔加工時 ’則會產生通路孔之孔深起變化或切斷加工時之切斷面形 狀紊亂等實用上之問題。實用上，雷射光輸出之變動乃被 要求抑制於1 0 %以內。 本發明爲鑑於上述事宜所進行者，其目的係在於利用 非線性光學結晶將經變換波長之雷射光予以照射被加工物 以進行加工之加工用雷射裝置，極力促使步驟更換等所致 雷射光射出停止後之雷射光輸出功率較大變動予以趨小， 而可進行優異加工者。 爰是本發明人等經各種檢討結果，已獲知加工用雷射 裝置之雷射光輸出變動係有關於非線性光學結晶之雷射光 穿過部之溫度。 (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 492229 A7 ____B7 五、發明説明（5 ) (請先閲讀背面之注意事項再填寫本頁) 通吊’ L B〇結晶或C L B〇結晶等之非線性光學結 晶當其溫度變化時波長變換效率即變化。非線性光學結晶 雖如上述圖9所示，由調溫器予以控制於固定溫度，唯只 不過是將非線性光學結晶之表面溫度控制於固定溫度而已 ，並非直接控制雷射光透過之非線性光學結晶部份之溫度 (以下稱謂內部溫度）。 上述加工用雷射裝置由於間歇性予以照射雷射光，致 於雷射光開始射出直後，非線性光學結晶吸收經波變變換 之光，而雷射光透過之結晶內部溫度會上昇。又雷射光停 止射出經過所定時間後結晶內部溫度即下降。此種內部溫 度之變化在每一〇N/〇F F反覆。 因此’雖將非線性光學結晶表面溫度控制於一定，尙 可推想由雷射光源Ο N /〇F F導致結晶內部溫度變化， 對應之結晶相位配合角亦變動，招致雷射光輸出功率之變 動。 經濟部智慧財產局員工消費合作社印製 特別是在上述圖1 〇所說明多層印刷板之加工，於步 驟更換之間非線性光學結晶內部溫度會下降，當步驟變換 後射出雷射光時促使非線性光學結晶之內部溫度上昇，故 如圖1 0 ( C )所示輸出功率大爲變動。 根據上述本發明人等更進一步檢討結果，如後述已知 藉將利用非線性光學結晶之波長變換元件表面溫度保持於 此雷射光照射開始時之上述波長變換元件內部溫度呈輸出 功率最大時之內部溫度爲低，且較照射終了時之上述波長 變換元件內部溫度呈輸出功率最大時之內部溫度爲高之溫 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 492229 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（6 ) 度，而可促使輸出功率之變動變小。 又，藉溫度控制手段控制波長變換元件表面溫度，不 關雷射光之射出時/停射時並將波長變換元件之內部溫度 控制於保持輸出功率呈最大時之溫度，則更能將輸出功率 之變動趨小。亦即，藉雷射光之照射開始信號致使波長變 換元件之表面溫度下降，又藉雷射光之照射停止信號致使 波長變換元件之表面溫度上昇，而將其內部溫度經常控制 保持於可獲得最大輸出功率之溫度。藉此乃可將波長變換 元件之變換效力保持於最大，促使輸出功率之變動小。 圖1爲本發明第一實施例之加工用雷射裝置之構造顯 示圖。 在同圖，1 a爲Nd ; YAG ;Nd : YLF等之雷 射媒體，1 b爲全反射鏡，1 c爲透射鏡，1 d爲Q -S W，1 e爲激勵光源，而由1 a〜1 e構成雷射光源1 ，且藉激勵光源1 e之激勵經由透射鏡1 c自雷射光源1 放射基波雷射光（雷射媒體爲Nd:YLF時，1047 n m )。又藉Q - SW驅動器2以控制上述Q — SW，而 可控制雷射光之放射/停射。 3爲使用如L B〇結晶’ B B〇結晶等之非線性光學 結晶之第一波長變換元件，可射入上述基波雷射光並射出 基波雷射光及其雙倍波。 4爲加熱上述第一波長變換元件3之溫度調節加熱器 (謂調溫加熱器），5爲調溫控制器，該調溫控制器5被 輸入以設於第一波長變換元件3表面之熱電偶等溫度測定 --·-----.--0-- (請先閱讀背面之注意事項再填寫本頁) 訂 -· 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -9 - 492229 經濟部智慧財產局員工消費合作社印製 A7 B7__五、發明説明（7 ) 器之輸出，且如上述圖9所說明控制調溫加熱器4將第一 波長變換元件3之溫度調節於預先設定之溫度。 6爲使用L B〇結晶，C L B〇結晶等非線性光學結 晶之第二波長變換元件，係被射入第一波長變換元件3射 出之基波雷射光及其雙倍波，而射出基波雷射光之雙倍波 及三倍波。 7爲加熱上述第二波長變換元件6之調溫加熱器，8 爲如上述將第一，第二波長變換元件3，6表面溫度保持 於此雷射光照射開始時之上述波長變換元件內部溫度呈輸 出功率最大時之內部溫度爲低，且比雷射照射終了時之上 述波長變換元件內部溫度呈輸出功率最大時之內部溫度爲 高。而藉此可使雷射光射出直後之輸出功率變動變小，將 輸出功率變動控制於1 〇 %以下。 以下，即就藉將波長變換元件3，6之表面溫度保持 於如上述溫度而可促使雷射光之輸出功率變小之理由加以 說明。 首先說明結晶溫度與波長變換效率之關係。 一般’非線性結晶之波長變換效率（ E t a )係可 由下式（1)予以表示。 Π 〇c{sin2(A kL/2)}/(A kL/2)2.........(1) 在此’ L爲非線性結晶之光學距離》△ k爲非線性結 晶所射入雷射與所射出雷射之波數差，可由下式（2 )予 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 492229 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（8 ) 以表示。 △ k=2 π (π3/λ 3_η2/λ 2-nl/入 1).........(2) 又，λ 1 ，λ 2爲射入於非線性結晶之雷射波長， λ 3爲自非線性結晶所射出經波長變換之雷射波長，n i 爲對於波長λ i之折射率’且由對於非線性結晶之物理光 學座標之射入光射入角（0 )與其偏光方位（^ )及非線 性結晶之溫度（T )予以決定。 即’折射率η乃如其次之（3 )式所示可以0，0， Τ之函數加以表示。 π — f ( Θ ，0 ，T ) ......... ( 3 ) 因此’由（1 ) ( 2 ) ( 3 )式，波長變換效率τ?能 以非線性結晶之溫度T之函數表示之。 藉上述（1 ) ( 2 ) ( 3 )式求出對於結晶溫度之波 長變換效率7?則如圖2所示。 爲驗證上述情形，乃使L B 0結晶表面溫度予以變化 ’加以實測穩定時之輸出功率。其測定所使用雷射裝置則 如下述。 以非線性光學結晶採用光學距離L = 1 5 m m之 L B〇結晶。且向該l B〇結晶射入波長λ 1二1 〇 4 7 nm雷射光及波長λ2=523·5nm之雷射光，並自 本紙張尺度適用中國國家標準（ CNS ) a4規格（210X297公釐） ~ (請先閲讀背面之注意事項再填寫本頁) 492229 A7 B7 五、發明説明（9 ) (請先閲讀背面之注意事項再填寫本頁) LB〇結晶射出經波長變換之波長λ 3 = 3 4 9 nm之光 。在此，L B〇結晶之射入光射入角0 = 4 8 ° ± 1。， 偏光方位0 = 9 0 ° 。 圖3爲上述實測結果之描繪圖。 由圖3可明暸，當非線性光學結晶之溫度爲5 5 °C時 ，輸出功率呈最大之5 . 5W，溫度變高變低該輸出功率 均下降。其結果與上述（1) (2) (3)式所求結果完 全一致。 依據圖2 ，圖3，如將結晶溫度於一定，理應不會致 使雷射光輸出功率變動才是。但實際上，雷射光開始射出 後數秒〜十數秒內輸出會上昇。經檢討各種原因後，已知 這是因非線性光學結晶之雷射光透射部份之局部性溫度（ 內部溫度）變化（上昇）所致。 經濟部智慧財產局員工消費合作社印製 如上述，非線性光學結晶之溫度係被測定結晶表面之 溫度，並控制其溫度呈所設定之溫度。例如設想結晶（表 面）溫度被控制於5 5 °C之情形。當雷射光未射入於非線 形光學結晶時，非線性光學結晶溫度全體以略均勻狀態被 控制於5 5 °C。 此時，如向非線性光學結晶射入雷射光時，即射出經 波長變換之雷射光。結晶乃吸收經波長變換之雷射光，該 部份溫度則上昇（該溫度上昇主要依存於經波長變換所輸 出之雷射光功率。且短波長光較易被結晶吸收所致）。 因此，雖由於熱傳導會致使結晶表面溫度亦上昇，唯 熱電偶會檢出結晶表面之溫度上昇，並由調溫器將表面溫 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 492229 A7 B7 五、發明説明（1〇 ) 度控制於5 5 °C溫度。 (請先閲讀背面之注意事項再填寫本頁} 雷射光透射部份之加熱係自內部傳至表面，並藉將表 面溫度控制於5 5 °而被予以散熱。且非線性光學結晶內 部之雷射光透射部份之溫度對於表面溫度以稍高狀態呈熱 平衡狀態（在結晶內部產生溫度坡斜）。 因此，雷射光輸出穩定時之非線性光學結晶之內部溫 度實際上理應比表面溫度之5 5 °C爲稍高之溫度。 即’將非線性光學結晶之（表面）溫度控制於5 5 °C ，俾使雷射光穩定時之輸出功率呈最大而調整相位配合角 時’能於非線性光學結晶內部溫度爲稍高於5 5艽溫度（ 如5 5 · 7 °C )之下將相位配合角調整爲輸出功率呈最大 〇 由上述可導出如次之結論。 呈非線性光學結晶未被射入雷射光時，非線性光學結 晶全體溫度爲5 5 °C。於此溫度射入雷射光時，由於非線 性光學結晶之相位配合角係被調整爲於如5 5 · 7。時輸Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 492229 A7 _ B7 V. Description of the Invention (彳) The present invention relates to the use of a wavelength conversion element to perform wavelength conversion, and to irradiate wavelength-converted light to processed objects such as printed boards Laser device for processing. Processes such as through-hole layout of printed circuit boards and cutting of films and metals are performed using laser light. In recent years, laser light used for processing has been shortened due to the need for detailed processing. For the generation of short-wavelength laser light, it is more effective to use a wavelength conversion method using non-linear optical crystals. Fig. 9 shows a schematic structure of a processing laser device 100 for processing by using a wavelength conversion of a non-linear optical crystal. The laser light emitted from the laser light source 11 is collected by the condenser lens 12 and incident on the nonlinear optical crystal 13. Part of the laser light incident on the non-linear optical crystal 1 3 is wavelength-converted and emitted from the non-linear optical crystal 13. The emitted light is condensed by the condenser lens 14 and irradiates the workpiece 15. Non-linear optical crystals 13 are used, such as L B0, C L B0 and so on. When the above-mentioned non-linear optical crystal 1 3 has a known temperature and phase matching angle (the angle at which laser light is incident on the crystal) changes, the output radio power changes. Therefore, the nonlinear optical crystal 1 3 is controlled so that its temperature becomes constant. The temperature control of the non-linear optical crystal 13 is to contact the surface of the non-linear optical crystal 13 with a temperature measuring element such as a thermocouple 16 and the entire non-linear optical crystal is heated by a heating means such as a heater 18 or Peltier. Yuan and other cooling means are covered. The output of the thermocouple 16 is input to the thermostat 17 (the following paper size is suitable for Guancai County (CNS) M specifications (21ϋ × 297 mm))------ -------- ^-0 ------ 1Τ ------ AWI (Please read the notes on the back before filling out this page) 492229 A7 B7 V. Description of the invention (2) The thermostat 1 7). The thermostat 17 feedbacks the measured temperature of the non-linear optical crystal 13 to a preset temperature, and controls the input of the heating means or the cooling means to adjust the temperature of the non-linear optical crystal 13. (Please read the precautions on the back before filling this page} Figure 9 shows the situation where the non-linear optical crystal 1 3 is heated using the heater 1 8 'The following is an example of the case where the non-linear optical crystal 1 3 is heated The output of the laser device 1 for processing is adjusted as follows. ① The non-linear optical crystal 1 3 is heated to a set temperature and controlled to a certain temperature. In its state, the self-laser light source 1 1 The laser light is incident on the nonlinear optical crystal 1 3, and the laser light outputted by the wavelength conversion is received by a power monitor (not shown). ② Observe the power monitor and phase-match the angle of the nonlinear optical crystal 1 3 Adjust to the maximum angle to determine the angle at which the non-linear optical crystal 13 is arranged. When processing the via hole processing of the multilayer printed board by the above-mentioned processing laser device 10, the laser light is passed through the shutter or Q-S W Printed by 〇N / Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 〇FF 'Pulsed laser light is intermittently irradiated on the workpiece 15. Figure 10 shows the processing condition of the laser light via hole. As shown in (a), usually a plurality of irradiation areas A 1 ′ A 2 ′ are formed on one substrate, and each irradiation area A 1, A 2,… is provided with a plurality of perforations. The laser light emitted by the self-processing laser device is scanned by a galvanometer and other control methods to locate the perforated positions of the multilayer printed board, and the pulsed laser light is irradiated to the perforated positions multiple times to perform the via hole. Processing. -5- This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 492229 A7 B7 V. Description of the invention (3) (Please read the precautions on the back before filling this page) That is, as shown in the figure As shown in (d), the half-wave full-amplitude (pulse width at peak 2 1/2) is a number of 10 ns to 1 OOn s and a laser pulse with a repetition frequency of several KHz to several 1OKHz. The perforated part is irradiated multiple times as shown in Figure (c) for perforation processing. After completing a perforation, the laser light will be moved to the next perforated part of the same area, and the perforation operation will be repeated in the same way. After perforation, as shown in Figure (b), the laser is not ordered At 0FF, move the laser light to the next area 2 to perform the same perforation processing. The following perforation processing of each area A 1, A 2 ... of the multilayer printed board is also performed in sequence, until the completion of a multilayer printed substrate. After the perforation, the laser light is replaced by 0 FF to replace the multi-layer printing plate for the next printing plate processing. Here, the number of shots of the laser, for example, 1 to 30 shots for one perforation. Also, Fig. 10 (c) After the laser light starts to be emitted, the size of the laser light gradually increases, but this is the output change caused by the internal temperature rise which is a non-linear optical crystal as described later. As described above, when the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs uses the laser device for processing to process the via holes of the multilayer printed board, it is necessary to replace the processed workpiece (multilayer printed board) with an unprocessed workpiece. Or the operation of moving laser light to the irradiation area in a multilayer printed board (this operation is called "step replacement"). The replacement time for such a step usually takes seconds to tens of seconds (sometimes several minutes). When performing the step replacement, as shown in FIG. 10, the self-laser light source does not emit laser light, and the processing laser device does not output laser. And after the step is replaced, the laser light is emitted from the laser light source, and the workpiece is irradiated with the wavelength-converted paper size applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -6- 492229 A7 B7 employees of the Intellectual Property Bureau of the Ministry of Economy Cooperative prints 5. Description of invention (4) Laser light. Only in the above-mentioned processing laser device, after the end of the step conversion (after the end of the laser light emission stop period), the laser light output from the processing laser device after wavelength conversion is output, although the temperature of the non-linear optical crystal is fixedly controlled at The set temperature, however, will occur during a few seconds to ten seconds (the power gradually increases). FIG. 11 shows the change of the output laser power of the laser device of FIG. 9. The figure shows the case where L B0 is used as an amorphous optical crystal, and L B ◦ is fixedly controlled at 5 5 · 1 ° C. As shown in the figure, although the laser power after the start of laser emission is 4 · 2 W, it will gradually rise to about 5 · 5 W after about 15 seconds, but it will show a certain output. That is to say, the change is 15% for 15 seconds. When the output of the laser light changes as shown in FIG. 11, and when the via hole is processed, there will be practical problems such as the change in the depth of the via hole or the disorder of the shape of the cut surface during the cutting process. In practice, fluctuations in laser light output are required to be suppressed to within 10%. The present invention has been made in view of the above-mentioned matters, and its object is to use a non-linear optical crystal to irradiate laser light with a converted wavelength to a processed object to process the laser device for processing, and strongly promote laser light caused by step replacement, etc. After the emission stop, the laser light output power fluctuates greatly, and it is possible to perform excellent processing.爰 is the result of various reviews by the present inventors, and it is known that the laser light output variation of the processing laser device is related to the temperature of the laser light passing portion of the nonlinear optical crystal. (Please read the precautions on the back before filling this page) The size of the paper used for this edition applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 492229 A7 ____B7 V. Description of the invention (5) (Please read the precautions on the back before (Fill in this page) Non-linear optical crystals such as' LB〇 crystals or CLB〇 crystals are subject to change when the temperature changes. Although the nonlinear optical crystal is controlled by a thermostat at a fixed temperature, as shown in FIG. 9 above, it is only a matter of controlling the surface temperature of the nonlinear optical crystal to a fixed temperature, not a nonlinear optic that directly controls laser light transmission. The temperature of the crystalline part (hereinafter referred to as the internal temperature). The laser device for processing described above irradiates laser light intermittently, so that after the laser light starts to be emitted straight, the nonlinear optical crystal absorbs the light transformed by the wave transformation, and the internal temperature of the crystal transmitted by the laser light rises. After the laser light stops emitting, the internal temperature of the crystal drops after a predetermined time. This internal temperature change is repeated every 0N / OFF. Therefore, although the surface temperature of the non-linear optical crystal is controlled to be constant, 尙 it is conceivable that the internal temperature of the crystal changes due to the laser light source 0 N / 0 F F, and the corresponding crystal phase matching angle also changes, resulting in changes in the laser light output power. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, especially in the processing of the multilayer printed board illustrated in Figure 10 above, the internal temperature of the non-linear optical crystal will decrease between step replacements, which promotes non-linearity when laser light is emitted after the step change The internal temperature of the optical crystal rises, so the output power varies greatly as shown in Fig. 10 (C). According to the results of the present inventors' further review, as described later, it is known that the internal temperature of the above-mentioned wavelength conversion element at the time when the laser light irradiation is started is maintained at the maximum internal power when the surface temperature of the wavelength conversion element using non-linear optical crystal is maintained The temperature is low and higher than the internal temperature of the above-mentioned wavelength conversion element at the end of irradiation. The internal temperature is high when the output power is maximum. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8- 492229 Economy The Ministry of Intellectual Property Bureau ’s Consumer Cooperatives printed A7 B7 V. Invention Description (6) degrees, which can reduce the variation in output power. In addition, by controlling the temperature of the surface of the wavelength conversion element by means of temperature control, and controlling the internal temperature of the wavelength conversion element to the temperature at which the output power is kept at the maximum when the laser light is emitted / stopped, the output power can be further controlled. The change becomes smaller. That is, the surface temperature of the wavelength conversion element is lowered by the start signal of the laser light, and the surface temperature of the wavelength conversion element is raised by the stop signal of the laser light, and the internal temperature is often controlled to maintain the maximum output power. Of temperature. This can keep the conversion efficiency of the wavelength conversion element to a maximum, and promote small variations in output power. Fig. 1 is a diagram showing the structure of a laser device for processing according to a first embodiment of the present invention. In the figure, 1 a is a laser medium such as Nd; YAG; Nd: YLF, etc., 1 b is a total reflection mirror, 1 c is a transmission mirror, 1 d is Q-SW, 1 e is an excitation light source, and 1 a ~ 1e constitutes the laser light source 1, and the excitation of the excitation light source 1e emits fundamental wave laser light from the laser light source 1 through the transmission lens 1c (when the laser medium is Nd: YLF, 1047 nm). The Q-SW driver 2 is also used to control the above-mentioned Q-SW, and the laser light emission / stopping can be controlled. 3 is a first wavelength conversion element using a non-linear optical crystal such as L B〇 crystal ' B B 0 crystal, etc., which can enter the fundamental wave laser light and emit the fundamental wave laser light and its double wave. 4 is a temperature adjustment heater (referred to as a temperature adjustment heater) for heating the first wavelength conversion element 3, and 5 is a temperature adjustment controller. The temperature adjustment controller 5 is input to thermoelectricity provided on the surface of the first wavelength conversion element 3. Even temperature measurement -----------.-- 0-- (Please read the precautions on the back before filling this page) Order-· This paper size applies to China National Standard (CNS) Α4 size (210X297 mm ) -9-492229 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs _5. Description of the invention (7) The output of the device, and the temperature control heater 4 is controlled as described in FIG. 9 above to convert the first wavelength conversion element 3 The temperature is adjusted to a preset temperature. 6 is a second wavelength conversion element using non-linear optical crystals such as LB〇 crystal, CLB〇 crystal, etc., which are incident on the fundamental wave laser light and its double wave emitted from the first wavelength conversion element 3, and emit the fundamental wave laser light Double wave and triple wave. 7 is a temperature-adjusting heater for heating the second wavelength conversion element 6, and 8 is to maintain the surface temperature of the first and second wavelength conversion elements 3, 6 as described above. The internal temperature when the output power is maximum is low, and is higher than the internal temperature of the above-mentioned wavelength conversion element at the end of laser irradiation, when the output power is maximum. In this way, the output power variation after the laser light is emitted can be reduced, and the output power variation can be controlled below 10%. In the following, the reason why the output power of laser light can be made small by keeping the surface temperature of the wavelength conversion elements 3, 6 at the above-mentioned temperature will be explained. First, the relationship between the crystallization temperature and the wavelength conversion efficiency will be described. The wavelength conversion efficiency (E t a) of the general 'non-linear crystal can be expressed by the following formula (1). Π 〇c {sin2 (A kL / 2)} / (A kL / 2) 2 ... (1) Here 'L is the optical distance of the non-linear crystal》 △ k is the non-linear crystal The difference between the wave number of the injected laser and the emitted laser can be given by the following formula (2) (please read the precautions on the back before filling this page) The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297) ) -10- 492229 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (8) is shown. △ k = 2 π (π3 / λ 3_η2 / λ 2-nl / in1) ......... (2) In addition, λ 1 and λ 2 are the laser wavelengths incident on the nonlinear crystal, λ 3 is the wavelength converted laser wavelength emitted from the non-linear crystal, and ni is the refractive index of the wavelength λ i and the incident angle (0) of the incident light with respect to the physical optical coordinates of the non-linear crystal and its polarization orientation (^) And the temperature (T) of nonlinear crystallization. That is, the 'refractive index η can be expressed as a function of 0, 0, and T as shown by the following formula (3). π — f (Θ, 0, T) ......... (3) Therefore, from the formula (1) (2) (3), the wavelength conversion efficiency τ? Functions represent it. Using the above formula (1) (2) (3) to obtain the wavelength conversion efficiency 7? For the crystallization temperature is shown in Figure 2. In order to verify the above situation, the L B 0 crystal surface temperature was changed 'and the output power at the time of stable measurement was measured. The laser device used for the measurement is as follows. L B0 crystals with optical distance L = 15 mm were used as non-linear optical crystals. The laser light having a wavelength of λ 12 to 107 nm and a laser light having a wavelength of λ 2 = 523.5 nm were injected into the 1 B0 crystal, and the Chinese National Standard (CNS) a4 specification (210X297 mm) was applied from the paper size. ~ (Please read the precautions on the back before filling out this page) 492229 A7 B7 V. Description of the invention (9) (Please read the precautions on the back before filling out this page) LB〇 Crystal emitted wavelength converted wavelength λ 3 = 3 4 9 nm light. Here, the incident angle of the incident light of the L B0 crystal is 0 = 4 8 ° ± 1. , The polarization direction is 0 = 9 0 °. FIG. 3 is a drawing depicting the actual measurement results. As can be seen from Figure 3, when the temperature of the non-linear optical crystal is 5 5 ° C, the output power is 5.5 W at the maximum, and the output power decreases as the temperature becomes higher and lower. The result is completely consistent with the result obtained by the above formulas (1), (2), and (3). According to Figure 2 and Figure 3, if the crystallization temperature is constant, it should not cause the laser light output power to change. However, in reality, the output will rise within a few seconds to ten seconds after the laser light starts to be emitted. After reviewing various reasons, it is known that this is caused by the local temperature (internal temperature) change (rise) of the laser light transmitting portion of the nonlinear optical crystal. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs As mentioned above, the temperature of the non-linear optical crystal is measured at the surface of the crystal, and its temperature is controlled to be the set temperature. For example, imagine the case where the crystallization (surface) temperature is controlled at 5 5 ° C. When the laser light is not incident on the non-linear optical crystal, the temperature of the non-linear optical crystal as a whole is controlled at 55 ° C in a slightly uniform state. At this time, if the laser light is injected into the non-linear optical crystal, the laser light converted by the wavelength conversion is emitted. Crystals absorb laser light converted by wavelength, and the temperature of the part rises (the temperature rise is mainly dependent on the laser light power output by wavelength conversion. And short-wavelength light is more easily absorbed by crystals). Therefore, although the temperature of the crystal surface also rises due to heat conduction, only the thermocouple will detect the temperature rise of the crystal surface, and the surface temperature of the paper will be adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm) by the thermostat. -12- 492229 A7 B7 V. Description of the invention (10) The temperature is controlled at 55 ° C. (Please read the precautions on the back before filling in this page} The heating of the laser light transmitting part is transmitted from the inside to the surface, and the heat is dissipated by controlling the surface temperature to 5 5 °. And the lightning inside the nonlinear optical crystal The temperature of the transmitted part of the light is in a state of thermal equilibrium with the surface temperature at a slightly higher state (a temperature slope occurs inside the crystal). Therefore, the internal temperature of the nonlinear optical crystal when the laser light output is stable should actually be higher than 5 5 of the surface temperature. ° C is a slightly higher temperature. That is, 'the (surface) temperature of the nonlinear optical crystal is controlled to 5 5 ° C, so that the output power when the laser light is stable is maximized, and the phase fit angle can be adjusted' in nonlinear optics The internal temperature of the crystal is slightly higher than 55 ° F (such as 55 · 7 ° C), and the phase matching angle is adjusted so that the output power is maximized. The above conclusion can be derived as follows. It is a non-linear optical crystal. When laser light is incident, the overall temperature of the nonlinear optical crystal is 5 5 ° C. When laser light is incident at this temperature, the phase matching angle system of the nonlinear optical crystal is adjusted to be 5 5 · 7. Lose
出功率呈最大，以致非線性光學結晶內部溫度如在5 5 °C 經濟部智慧財產局員工消費合作社印製 ’當然變換效率比及最大效率時爲小，於是輸出功率亦較 小。 且隨雷射光之自非線性光學結晶繼續輸出，結晶內部 溫度乃上昇，隨之輸出功率亦上昇。而結晶內部溫度達到 55 . 7 °C時’與相位配合角之關係呈最適宜，輸出功率 呈最大並穩定。 田W非線性光學結晶停止雷射光輸入時（停止自非線 本纸張尺度適财g國家標準（CNS) A4^tt^X297公釐） -13- 492229 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（n ) 丨生尤學結晶之雷射輸出）’內部溫度即下降，結晶全體溫 度再呈5 5 °C。 由此可知，雷射射出開始後之輸出功率變動則是將非 線性光學結晶之溫度以表面溫度加以控制所產生之問題。 因此，如能將非線性光學結晶之雷射光透射部份，即 結晶內部溫度加以測定，並將該部份之溫度控制於一定乃 不會產生此種問題。 但，欲將結晶內部埋設熱電偶等測定元件甚爲困難， 就算能埋設，亦由於雷射光之光程存在該種測定元件，以 致所輸出雷射光會有影子，實際上無法利用。 於是，即以推定非線性光學結晶之雷射輸出時之雷射 光透射部份溫度（內部溫度），而求出雖該內部溫度變動 卻雷射光輸出功率變動亦較少之結晶溫度範圍。以下乃將 波長λ 1二1 0 4 7 nm之雷射光及波長λ 2 = 5 2 3 . 5 n m之雷射光射入於上述L Β〇結晶，並予以 射出波長λ 3 = 3 4 9 n m光之雷射裝置爲例加以說明。 首先，將被設定有自雷射光源之雷射光射入角（相位 配合角）之非線性光學結晶設定於某表面溫度如5 5 t。 且以其修件由雷射光源予以射入雷射光，並測定雷射開始 射出直後之輸出功率。獲得該輸出功率時之結晶內部溫度 可想與表面溫度相同。即，內部溫度爲5 5 °C時之輸出功 率，如上述圖11時爲4.2W。 其次，將非線性光學結晶之表面溫度予以變化，如上 述測定雷射開始射出直後之輸出功率。且反覆如此測定， —I. 0------、訂------#1 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14- 492229 A7 B7 五、發明説明（12 ) 以求取結晶內部溫度與表面溫度可想像爲相同時之輸出功 碎《〇 (請先閲讀背面之注意事項再填寫本頁) 將如此求取之對於結晶溫度之輸出功率，顯示於圖4 〇 自上述說明可知，圖4係爲某一相位配合角之對內部 溫度之輸出功率。由同圖可推知結晶內部溫度爲 55 · 7°C時呈最大輸出功率（圖4爲5 · 5W)。 亦即，如設想雷射射出開始直後之結晶內部溫度與結 晶表面溫度一致，則對於雷射光透射非線性光學結晶內部 之溫度之雷射光輸出功率變化可由如次加以求出。 ① 在雷射光源未對非線性光學結晶射入雷射光之狀態 ，將該結晶表面溫度控制於所定溫度。 ② 向非線性光學結晶射入雷射光，求取射入雷射光直 後所射出經波長變換之雷射輸出功率。 ③ 改變自雷射光源未射入雷射光之狀態之結晶表面溫 度’反復上述①，②之測定，以求出各表面溫度之輸出功 率變化。 經濟部智慧財產局員工消費合作社印製 在此，於上述圖3所示之對於非線性結晶之表面溫度 的雷射輸出功率變化顯示圖，乃將某一相位配合角之能獲 得最大輸出功率時之表面溫度（在圖3爲5 5 · 0°C)定 義爲「可得最大輸出功率之表面溫度」，又於如上述所求 非線性光學結晶之內部溫度與雷射之輸出功率之關係，在 上述相位配合角之能獲得最大輸出功率時之內部溫度（在 圖4爲5 5 . 7°C)定義爲「可得最大輸出功率之內部溫 本紙張尺度適用中國國家標準（CNS ) A4規格（210X25)7公釐） -15- 492229 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（13 ) 度」。 於是’在如上述將表面溫度控制於5 5 °C時，由輸出 例如自4 · 2 W上昇至5 · 5 W趨於穩定，故可推想結晶 內部溫度因雷射光之輸出而上昇〇 . 7 °C。 因此在圖4，欲求取非線性光學結晶之溫度雖變化 0 · 7 °C ’還能使雷射光輸出功率變動呈1 〇 %以下（輸 出功率變動幅度約爲5〜5 · 5 W )之非線性光學結晶內 部溫度範圍時，則爲約5 5 · 4。(：〜5 6 · 1 °C。 是故，如將非線性光學結晶未射入雷射光時之結晶溫 度設定於5 5 · 4 °C，結晶內部溫度亦呈5 5 . 4 °C，致 雷射光射出開始時約會輸出5 W之雷射光。又，對非線性 光學結晶繼續射入雷射光，而結晶內部溫度上昇至 55 · 7°C時，雷射光之輸出功率即呈最大之5 · 5W。 對於非線性光學結晶之雷射光射入再繼續時，結晶內 部溫度更加上昇，如呈約5 6 · 1 t而穩定。此時之輸出 功率則爲約5 W。 即，如圖5 ( a )所示，如將未射出雷射光之結晶表 面溫度設疋5 5 · 4 C時’於雷射光開始射出後，結晶內 部溫度乃如冋圖前頭所不上昇’隨之雷射光之輸出功率亦 增大。且待至結晶內部溫度呈5 5 · 7 °C時輸出功率變爲 最大，而結晶內部溫度更上昇時輸出功率即減少。 因此，結晶內部溫度範圍在5 5 . 4 °C〜5 6 . 1 °C 時，輸出功率係在同圖所示A範圍變化。 針對之，將未射入雷射光之結晶表面溫度設定於 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------·------1T------4 (請先閱讀背面之注意事項再填寫本頁) -16- 492229 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（14 ) 5 5 °C ’且結晶內部溫度變化爲〇 · 7 t時，結晶內部溫 度則如圖5 ( b )變化。亦即，如同圖所示，於雷射光射 出開始後’結晶內部溫度如同圖箭頭所示上昇，隨之增大 雷射光之輸出功率。而當結晶內部溫度呈5 5 · 7 °C時輸 出功率呈最大。此時輸出功率則在同圖所示B範圍變化。 自圖5 ( a ) ，（ b )可知，如將波長變換元件表面 溫度保持於比照射開始時之上述波長變換元件內部溫度呈 輸出功率爲最大時之內部溫度（圖5 ( a ) 2Q點）爲低 ’且比照射終了時之上述波長變換元件內部溫度呈輸出功 率爲最大時之內部溫度（上述Q點）爲高時，則可使輸出 功率之變動設成比圖5 ( b )時爲低。 亦即如上述，將在圖3之可獲最大輸出功率時之表面 溫度定義爲「可得最大輸出功率之表面溫度」，又將在圖 4之可獲得最大輸出功率時之內部溫度定義爲「可獲最大 功率之內部溫度」時，藉將非線性光學結晶之表面溫度設 定於上述「可得最大輸出功率之表面溫度」〔圖5 ( a ) 之P點〕與「可得最大輸出功率之內部溫度」〔圖5 ( a )之Q點）之間，而能使輸出功率之變動設成習知例爲小 〇 實用上，輸出功率之變動在1 〇%以內，最大亦在 1 5 %以內即可，故將非線性光學結晶表面溫度保持於比 開始只射時之上述波長變換元件內部溫度呈輸出功率爲最 大時之內部溫度〔圖5 ( a ) Q點〕爲低，且比照射終了 時之上述波長變換元件內部溫度呈輸出功率爲最大時之內 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 492229 A7 B7 五、發明説明（15 ) 部溫度（上述Q點）爲高，且將輸出變動設於1 5 %以內 之値即可。 (請先閲讀背面之注意事項再填寫本頁) 尤其是，如圖5 (a)所示，將上述「可得最大輸出 功率之表面溫度」設定於結晶內部溫度變化之變化效率曲 線最高値q點位於結晶內部溫度變化範圍中點，即可促使 輸出功率之變動呈最小。 圖6爲將L B〇結晶表面溫度設定於5 5 · 4 t：時之 雷射光輸出功率變動之顯示圖。同圖爲顯示使用與上述圖 1 1所使用雷射裝置相同雷射裝置之情形。 由同圖可知，雷射射出開始照射直後之輸出功率之變 動比上述圖1 1爲小，而變動幅度呈1 〇 %以下。 且在圖6 ，隨繼續雷射光輸出，如上述結晶溫度內部 溫度會比最適値稍高，故輸出功率稍有減少。但其變動乃 在1 0 %以下。 經濟部智慧財產局員工消費合作社印製 如上，本實施例係將非線性光學結晶表面溫度保持於 針對該結晶內部溫度之變化波長變換效率變動較少之溫度 領域，致可促使輸出功率變動較習知例爲小而能進行良好 之加工處理。 又，在上述雖說明以非線性光學結晶使用L B ◦以產 生三倍波之情形，唯在B B〇結晶，C L B〇結晶等之其 他非線性光學結晶俾使發生雙倍波，四倍波，其他倍波時 亦可適用本發明。 其次就本發明第二實施例加以說明。本實施例爲使雷 射光輸出功率變動更爲趨小，將波長變換元件之表面溫度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18- 492229 A7 B7 五、發明説明（16 ) 控制爲可保持輸出功率呈最大之內部溫度者。 (請先閱讀背面之注意事項再填寫本頁} 圖7爲本發明第二實施例之顯示圖。乃具有與上述圖 1所示相同構成，1 a爲Nd : YAG，Nd : YLF等 之雷射媒體，lb爲全反射鏡，lc爲透射鏡，Id爲Q 一 SW，1 e爲激勵光源，且由1 a〜1 e構成雷射光源 。並藉激勵光源1 e之激勵介由透射鏡1 c自雷射光源1 放射基波雷射光（雷射媒體爲Nd : YLF時爲1 047 n m )。又，藉Q — S W驅動器2以控制上述Q — S W則 可控制雷射光之放射/停射。3爲使用非線性光學結晶之 第一波長變換元件，可射入上述基波雷射光而射出基波雷 射光及雙倍波。 4爲加熱上述第一波長變換元件3之溫度調節加熱器 (謂調溫加熱器），5爲調溫控制器，且該調溫控制器5 被輸入以裝設於第一波長變換元件3表面之熱電偶等溫@ 測定器之輸出，如上述圖9所說明控制溫度調節加熱器4 ，將第一波長變換元件3之溫度調節於所設定之溫度。 經濟部智慧財產局員工消費合作社印製 6爲使用非線性光學結晶之第二波長變換元件，可^ 第一波長變換元件3射出之基波雷射光及其雙倍波予以& 入，而射出基波雷射光及基波雷射光之雙倍波與三倍波。 7爲加熱上述第二波長變換元件6之調溫加熱器，8 爲調溫控制器，調溫控制器8如上述控制調溫加熱器7 , 將第二波長變換元件6之溫度調節呈所設定之溫度。 9爲雷射控制裝置，係控制上述激勵光源1 e ，q _ S W驅動器2並控制自雷射光源1之雷射光放射同時，φ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -19- 492229 經濟部智慧財產局員工消費合作社印製 A7 __B7_五、發明説明（17 ) 向上述調溫控制器5，6輸出溫度指示信號。 圖8爲本實施例之動作顯示圖，茲參照同圖藉上述 L B〇結晶之例說明本實施例之動作。又附於圖8之（1 )〜（3 )則對應於以下附有括弧之數字。 (1 )對使用非線性光學結果之波長變換元件3，6 未射入雷射光時，係將非線性光學結晶表面溫度於其相位 配合角時控制爲雷射光穩定時之輸出功率呈最大之結晶內 部溫度（上述L B〇結晶時爲5 5 · 7 °C )。 具體說明之，自雷射控制裝置9向調溫控制器5，8 發振上昇指示之控制信號（在圖8由④示之）。藉此可使 結晶表面溫度（在圖8由②示之）上昇進而結晶內部溫度 (在圖8以③示之）亦上昇。 (2 )當雷射光射入於波長變換元件3 ，6時，雷射 控制裝置9乃對調溫控制器5，8輸出溫度下降信號，對 應內部溫度之上昇將結晶（表面）溫度予以下降至雷射光 輸出呈最大並穩定之表面溫度（上述L B 0結晶時爲向 5 5 °C下降）。 在此，雷射光照射中之結晶表面溫度下降比例即由所 輸入雷射光功率或雷射光射入於結晶之時間等加以決定。 雷射光之功率或雷射光射入於結晶之時間係由被加工 物之工件種類及加工修件可預先予以求出。因此將該等數 値設定於雷射控制裝置9 ，經運算求出結晶表面溫度下降 比例即可。雷射控制裝置9可輸出相對應之時間幅度之下 降信號。 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 492229 A7 B7 五、發明説明（18) (請先閱讀背面之注意事項再填寫本頁) (3 )接著，對波長變換元件3，6停止雷射光之輸 入時，雷射控制裝置9係對調溫控制器5，8輸出溫度上 昇信號，對應內部溫度之下降將結晶（表面溫度）上昇至 雷射光輸出呈最大並穩定之表面溫度（上述L B 0結晶時 間5 5 · 7 °C予以上昇）。 即，雷射控制裝置9會輸出對應於如上述求出之結晶 表面溫度上昇比例之時間幅度上昇信號。 以下，將上述（2 ) ，（ 3 )之控制對應雷射光之射 出/停射予以反覆，以控制結晶溫度。 藉如上述控制，乃能將波長變換元件內部溫度經常處 於雷射光穩定時之輸出功率呈最大之結晶內部溫度（上述 L B〇結晶時爲5 5 · 7 °C )，而將雷射光輸出功率保持 於最大且穩定之狀態。 如上述在本實施例，由於控制非線性光學結晶表面溫 度將該結晶內部溫度保持於波長變換效率呈最大之溫度， 故可使輸出功率變動控制比習知例爲小，以進行良好之加 工。 經濟部智慧財產局員工消費合作社印製 如上所說明，本發明係可獲得如下效果。 (1 )在藉使用非線性光學結晶之波長變換元件，將 經波長變換之雷射光照射於被加工物以進行加工之加工用 雷射裝置，由於將波長變換元件表面溫度保持於比照射開 始時之上述波長變換元件內部溫度呈輸出功率最大時之內 部溫度爲低，且比照射終了時之上述波長變換元件內部溫 度呈輸出功率呈最大時之內部溫度爲高，故可使自加工用 -21 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 492229 A7 B7 19 五、發明説明（） 雷射裝置所輸出雷射功率變動趨小。 (請先閲讀背面之注意事項再填寫本頁) 因此，例如在多層印刷板之通路孔加工，由於步驟更 換停止雷射光輸出後再欲輸出雷射光時，可使雷射光輸出 開始後之輸出功率變動趨小，而避免加工不良等之發生。 (2 )在藉使用非線性光學結晶之波長變換元件，將 經進行波長變換之雷射光照射於被加工物以進行加工之加 工用雷射裝置，當非線性光學結晶未被射入雷射光時，乃 將非線性光學結晶表面溫度控制於能獲得最大輸出雷射功 率時之表面溫度更局之溫度’又非線性光學結晶被射入雷 射光時’則將非線性光學結晶表面控制於可獲得最大輸出 雷射功率時之表面溫度，而可將非線性光學結晶之雷射光 照射部位溫度，經常保持於雷射光輸出功率呈最大之溫度 〇 因此，可將雷射輸出直後之輸出功率變動控制成非常 之小，且在多層印刷板之通路孔加工等能避免發生加工不 良等。 〔圖示之簡單說明〕 經濟部智慧財產局員工消費合作社^p製 圖1爲第一實施例之顯示圖。 圖2爲對於結晶溫度之波長變換效率7；之顯示圖。 圖3爲對於L B〇結晶之結晶溫度（表面溫度）之輸 出功率顯示圖。 圖4爲對於L B〇結晶之結晶溫度（內部溫度）之輸 出功率顯示圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 492229 A7 B7五、發明説明（20 ) 圖5爲結晶溫度與輸出功率之變動關係說明圖。 圖6爲將LB ◦結晶之表面溫度設定於55 · 4°C時 之雷射光輸出功率變動之顯示圖。 圖7爲本發明第二實施例之顯示圖。 圖8爲本發明第二實施例之動作顯示圖。 圖9爲加工用雷射裝置之槪略構造顯示圖。 圖1 0爲雷射光之通路孔加工模樣顯示圖。 圖1 1爲自L B〇結晶所輸出雷射功率變化之顯不圖 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 〔符號之說明〕 1 加工用雷射裝置 la 雷射媒體 lb 全反射鏡 1 c 透射鏡 Id Q — S W 1 e 激勵光源 2 Q-SW驅動器 3 波長變換元件 4 溫度調節加熱器 5 調溫控制器 6 波長變換元件 7 溫度調節加熱器 8 調溫控制器 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -23- 492229 A7 B7 五、發明説明（21 )9 雷射控制裝置 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -24-The output power is the largest, so that the internal temperature of the non-linear optical crystal is printed at 5 5 ° C by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Of course, the conversion efficiency ratio and maximum efficiency are small, so the output power is also small. And as the laser light continues to output from the nonlinear optical crystal, the internal temperature of the crystal rises, and the output power also increases. When the internal temperature of the crystal reaches 55.7 ° C, the relationship between ′ and the phase matching angle is optimal, and the output power is maximum and stable. Tian W Non-linear optical crystal When laser light input is stopped (Stop from non-linear paper size National Standard (CNS) A4 ^ tt ^ X297 mm) -13- 492229 Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs A7 B7 V. Description of the invention (n) 丨 The laser output of Shengyouxue Crystal) 'The internal temperature will drop, and the temperature of the whole crystal will be 5 5 ° C. From this, it can be seen that the output power fluctuation after the start of laser emission is a problem caused by controlling the temperature of the non-linear optical crystal with the surface temperature. Therefore, if the laser light transmission part of the nonlinear optical crystal, that is, the internal temperature of the crystal is measured, and the temperature of the part is controlled to a certain level, such a problem will not occur. However, it is very difficult to embed a measuring element such as a thermocouple inside the crystal. Even if it can be buried, the laser path of the laser light has such a measuring element, so that the output laser light will have a shadow and cannot be used in practice. Therefore, the temperature (internal temperature) of the laser light transmission part at the time of the laser output of the non-linear optical crystal is estimated, and the crystallization temperature range in which the laser light output power has little variation despite the internal temperature variation is obtained. In the following, the laser light with a wavelength of λ 1 2 10 4 7 nm and the wavelength λ 2 = 5 2 3. 5 nm are injected into the above L Β〇 crystal, and light with a wavelength of λ 3 = 3 4 9 nm is emitted. The laser device will be described as an example. First, a non-linear optical crystal with a laser light incident angle (phase matching angle) set from a laser light source is set to a surface temperature such as 5 5 t. The laser light source is used to inject the laser light with its repair parts, and the output power after the laser starts emitting straight is measured. The internal temperature of the crystal at the time of obtaining this output power is expected to be the same as the surface temperature. That is, the output power when the internal temperature is 5 5 ° C is 4.2W as shown in Fig. 11 above. Secondly, the surface temperature of the nonlinear optical crystal is changed, and the output power after the laser starts to emit as described above is measured. And repeatedly measured this way, —I. 0 ------, order ------ # 1 (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) -14- 492229 A7 B7 V. Description of the invention (12) To obtain the output power when the internal temperature of the crystal and the surface temperature can be imagined to be the same. "(Please read the precautions on the back before filling this page ) The output power for the crystallization temperature obtained in this way is shown in FIG. 4. As can be seen from the above description, FIG. 4 is the output power for a certain phase matching angle for the internal temperature. It can be inferred from the same figure that the maximum output power is obtained when the internal temperature of the crystal is 55 · 7 ° C (Figure 4 is 5 · 5W). That is, if it is assumed that the internal temperature of the crystal immediately after the start of laser emission is consistent with the temperature of the crystal surface, the change in laser light output power for the temperature at which laser light transmits through the nonlinear optical crystal can be obtained as follows. ① In a state where the laser light source has not injected laser light into the nonlinear optical crystal, the surface temperature of the crystal is controlled to a predetermined temperature. ② Inject the laser light into the nonlinear optical crystal, and obtain the laser output power that is converted by the wavelength after the incident laser light is straightened. ③ Change the crystal surface temperature of the state where the laser light source is not emitting laser light. Repeat the measurement of ① and ② above to obtain the output power change of each surface temperature. This is printed here by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. As shown in Figure 3 above, the laser output power change diagram for the surface temperature of the non-linear crystal is shown when the maximum output power can be obtained by matching the phase angle. The surface temperature (5 5 · 0 ° C in Figure 3) is defined as the "surface temperature at which the maximum output power can be obtained", and the relationship between the internal temperature of the non-linear optical crystal and the output power of the laser as described above, The internal temperature at which the maximum output power can be obtained at the above-mentioned phase-matching angle (55.7 ° C in Figure 4) is defined as "the internal temperature at which the maximum output power can be obtained. The paper size applies the Chinese National Standard (CNS) A4 specification. (210X25) 7 mm) -15- 492229 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention (13) Degree. Therefore, when the surface temperature is controlled at 5 5 ° C as described above, the output, for example, rises from 4 · 2 W to 5 · 5 W, and becomes stable. Therefore, it can be assumed that the internal temperature of the crystal increases due to the output of the laser light. 7 ° C. Therefore, in Figure 4, if the temperature of the non-linear optical crystal is changed by 0 · 7 ° C, it can also make the laser light output power change less than 10% (the output power change is about 5 ~ 5 · 5 W). The linear optical crystal has an internal temperature range of about 5 5 · 4. (: ~ 5 6 · 1 ° C. Therefore, if the crystallization temperature is set to 5 5 · 4 ° C when the non-linear optical crystal is not exposed to laser light, the internal temperature of the crystal is also 5 5 4 ° C. When the laser light emission starts, the laser light output is 5 W. In addition, the laser light continues to be injected into the nonlinear optical crystal, and when the internal temperature of the crystal rises to 55 · 7 ° C, the output power of the laser light becomes the maximum 5 · 5W. When the laser light incident to the nonlinear optical crystal continues to enter, the internal temperature of the crystal rises further, such as about 5 6 · 1 t and stable. The output power at this time is about 5 W. That is, as shown in Figure 5 ( a) As shown in the figure, if the surface temperature of the crystal that does not emit laser light is set to 5 5 · 4 C, 'after the laser light starts to emit, the internal temperature of the crystal does not rise as shown in the figure above' and the output power of the laser light It also increases. And when the internal temperature of the crystal becomes 5 5 · 7 ° C, the output power becomes the maximum, and the output power decreases when the internal temperature of the crystal increases. Therefore, the internal temperature range of the crystal is 5 5 4 ° C ~ 5 6. 1 ° C, the output power changes in the range A shown in the same figure. In contrast, the crystal surface temperature of the laser light that is not incident on the paper is set to the Chinese standard (CNS) A4 specification (210X297 mm) --------- · ------ 1T- ----- 4 (Please read the precautions on the back before filling this page) -16- 492229 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (14) 5 5 ° C When the temperature change is 0.7 t, the internal temperature of the crystal changes as shown in Fig. 5 (b). That is, as shown in the figure, after the laser light emission starts, the internal temperature of the crystal rises as shown by the arrow in the figure and then increases. The output power of the laser light. When the internal temperature of the crystal is 5 5 · 7 ° C, the output power is the maximum. At this time, the output power changes in the range B shown in the same figure. From Figure 5 (a), (b), If the temperature of the surface of the wavelength conversion element is kept lower than the internal temperature of the above-mentioned wavelength conversion element at the beginning of the irradiation, the internal temperature (Fig. 5 (a) 2Q point) when the output power is at the maximum is lower than the above-mentioned wavelength conversion at the end of irradiation The internal temperature of the component is the internal temperature (upper When Q) is high, the output power variation can be set lower than that in Figure 5 (b). That is, as described above, the surface temperature at which the maximum output power is obtained in Figure 3 is defined as "available The surface temperature of the maximum output power ", and the internal temperature at which the maximum output power can be obtained in Fig. 4 is defined as the" internal temperature at which the maximum power can be obtained ", by setting the surface temperature of the non-linear optical crystal to the above" may The surface temperature at which the maximum output power is obtained "[point P in Fig. 5 (a)] and the" internal temperature at which the maximum output power is obtained "[point Q in Fig. 5 (a)], and the change in output power can be set. The known practice example is small. Practically, the output power variation can be within 10%, and the maximum can also be within 15%. Therefore, the non-linear optical crystal surface temperature is maintained at the above-mentioned wavelength conversion element when it is only radiated. The internal temperature at which the output power is at its maximum [Figure 5 (a) Q point] is lower than the time when the internal temperature of the above-mentioned wavelength conversion element at the end of irradiation is at its maximum output power. This paper applies Chinese national standards. (CNS) A4 specification (210X297mm) (Please read the precautions on the back before filling this page) 492229 A7 B7 V. Description of the invention (15) The part temperature (the above Q point) is high, and the output variation is set within 15% Just click on it. (Please read the precautions on the back before filling this page.) In particular, as shown in Figure 5 (a), set the above-mentioned "surface temperature at which the maximum output power can be obtained" to the highest change efficiency curve of the temperature change in the crystal 値 q The point is located at the midpoint of the temperature variation range within the crystal, which can promote the minimum variation in output power. Fig. 6 is a graph showing the variation of laser light output power when the L B0 crystal surface temperature is set to 5 5 · 4 t :. The same figure shows a case where the same laser device as the laser device used in FIG. 11 is used. It can be seen from the same figure that the change in the output power after the laser emission starts to be irradiated is smaller than that in Figure 11 above, and the fluctuation range is less than 10%. And in Figure 6, as the laser light output continues, the internal temperature will be slightly higher than the optimum temperature as the above crystallization temperature, so the output power will be slightly reduced. However, the change was below 10%. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as above. This embodiment keeps the surface temperature of the non-linear optical crystal in a temperature range with less change in wavelength conversion efficiency in response to changes in the internal temperature of the crystal. The known example is small and can be processed well. In addition, although the case where LB is used as a nonlinear optical crystal to generate a triple wave is described above, only a double wave, a quadruple wave, and other non-linear optical crystals such as a BB0 crystal, a CLB0 crystal, and the like are generated. The present invention can also be applied at doubled waves. Next, a second embodiment of the present invention will be described. In this example, in order to make the laser light output power variation smaller, the surface temperature of the wavelength conversion element is adapted to the Chinese national standard (CNS) A4 specification (210X297 mm) -18- 492229 A7 B7 V. Description of the invention ( 16) Controlled to maintain the maximum internal temperature of the output power. (Please read the precautions on the back before filling in this page} Figure 7 is a display diagram of the second embodiment of the present invention. It has the same structure as shown in Figure 1 above, 1 a is the thunder of Nd: YAG, Nd: YLF, etc. In the transmission medium, lb is a total reflection mirror, lc is a transmission mirror, Id is Q-SW, 1 e is an excitation light source, and a laser light source is composed of 1 a to 1 e. The excitation of the excitation light source 1 e is through the transmission mirror. 1 c from the laser light source 1 radiates fundamental wave laser light (1 047 nm when the laser medium is Nd: YLF). Moreover, the Q-SW driver 2 is used to control the above-mentioned Q-SW to control the laser light emission / stop. 3 is a first wavelength conversion element using a non-linear optical crystal, which can inject the fundamental wave laser light and emit the fundamental wave laser light and double wave. 4 is a temperature-adjusting heater for heating the first wavelength conversion element 3 (Referred to as a thermostat heater), 5 is a thermostat controller, and the thermostat controller 5 is inputted with the output of a thermocouple isothermal @ tester installed on the surface of the first wavelength conversion element 3, as shown in FIG. 9 above The temperature control heater 4 is controlled to adjust the temperature of the first wavelength conversion element 3 to the set value. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 is a second wavelength conversion element using a non-linear optical crystal, and the fundamental laser light emitted by the first wavelength conversion element 3 and its double wave are & The fundamental wave laser light and the double wave and triple wave of the fundamental wave laser light are emitted. 7 is a temperature adjusting heater for heating the second wavelength conversion element 6, 8 is a temperature adjusting controller, and the temperature adjusting controller 8 is as described above. The temperature control heater 7 is controlled to adjust the temperature of the second wavelength conversion element 6 to a set temperature. 9 is a laser control device that controls the above-mentioned excitation light source 1 e, q_SW driver 2 and controls the self-light source 1 At the same time, the laser light emission, φ This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -19- 492229 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __B7_ V. Description of the invention (17) To the above The temperature-controlling controllers 5 and 6 output temperature indication signals. Fig. 8 is an operation display diagram of this embodiment, and the operation of this embodiment will be described with reference to the same figure as the LB0 crystal. Attached to Fig. 8 (1) ~ (3) corresponds to The numbers in parentheses are attached below. (1) For the wavelength conversion elements 3, 6 using the nonlinear optical result, when the laser light is not incident, it is controlled when the surface temperature of the nonlinear optical crystal is at the phase matching angle when the laser light is stable. The output power is the maximum internal temperature of the crystal (5 5 · 7 ° C in the case of the above-mentioned LB). Specifically, the laser control device 9 sends a vibration rising control signal to the temperature control controllers 5 and 8 ( It is indicated by ④ in FIG. 8). This can increase the surface temperature of the crystal (shown by ② in FIG. 8) and the temperature of the crystal (shown by ③ in FIG. 8). (2) When the laser light is incident on the wavelength conversion elements 3, 6, the laser control device 9 outputs a temperature drop signal to the temperature control controllers 5, 8 and reduces the crystal (surface) temperature to the lightning in response to the increase in the internal temperature The light output shows a maximum and stable surface temperature (the above LB 0 crystallizes to 5 5 ° C). Here, the reduction rate of the crystal surface temperature during the laser light irradiation is determined by the input laser power or the time when the laser light is incident on the crystal. The power of the laser light or the time of the laser light incident on the crystal can be determined in advance from the type of workpiece and the processed repair parts. Therefore, this number 値 may be set to the laser control device 9 and the ratio of the temperature drop of the crystal surface may be calculated by calculation. The laser control device 9 can output a corresponding time amplitude down signal. (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standards (CNS) A4 specifications (210X297 mm) -20- 492229 A7 B7 V. Description of the invention (18) (Please read the notes on the back first (Please fill in this page again for details) (3) Next, when the laser light input is stopped for the wavelength conversion elements 3 and 6, the laser control device 9 outputs a temperature rise signal to the temperature control controllers 5 and 8, which will crystallize when the internal temperature decreases. (Surface temperature) rises to the surface temperature where the laser light output is maximum and stable (the above LB 0 crystallization time is 5 5 · 7 ° C to rise). That is, the laser control device 9 outputs a time width increase signal corresponding to the crystal surface temperature increase ratio obtained as described above. In the following, the above-mentioned control of (2) and (3) is repeated corresponding to the emission / stop of laser light to control the crystallization temperature. By the above control, the internal temperature of the wavelength conversion element can be kept at the maximum crystalline internal temperature when the output power of the laser light is stable (the above-mentioned LB0 is 5 5 · 7 ° C), and the output power of the laser light is maintained. In the largest and stable state. As described above, in this embodiment, since the surface temperature of the non-linear optical crystal is controlled to maintain the internal temperature of the crystal at a temperature at which the wavelength conversion efficiency is maximized, the output power variation control can be made smaller than the conventional example to perform good processing. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs As described above, the present invention can achieve the following effects. (1) In a laser device for processing, which uses a wavelength conversion element using a non-linear optical crystal to irradiate a laser beam subjected to wavelength conversion to a processed object, the surface temperature of the wavelength conversion element is maintained at a temperature lower than that at the beginning of the irradiation. The internal temperature when the internal temperature of the above-mentioned wavelength conversion element is at the maximum output power is lower than the internal temperature when the internal temperature of the above-mentioned wavelength conversion element at the end of irradiation is at the maximum output power. -This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 492229 A7 B7 19 V. Description of the invention () The laser power output of the laser device changes less. (Please read the precautions on the back before filling this page) Therefore, for example, in the processing of the via holes of the multilayer printed board, the laser light output can be output after the laser light output is started, because the laser light output is stopped after the steps are replaced. The variation becomes smaller, and the occurrence of processing defects is avoided. (2) Using a wavelength conversion element using a non-linear optical crystal, a laser device for processing is used to irradiate laser light subjected to wavelength conversion to a processed object for processing. When the non-linear optical crystal is not injected into the laser light , Is to control the surface temperature of the nonlinear optical crystal to a temperature that is more local when the maximum output laser power can be obtained, and when the nonlinear optical crystal is injected into the laser light, the surface of the nonlinear optical crystal is controlled to obtain The surface temperature at the maximum output laser power, and the temperature of the laser light irradiation part of the nonlinear optical crystal can be kept at the temperature where the laser light output power is at the maximum. Therefore, the output power fluctuation after the laser output can be controlled to It is very small, and the processing of via holes in the multilayer printed board can avoid processing defects. [Brief description of the diagram] Manufactured by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ p Figure 1 is a display diagram of the first embodiment. FIG. 2 is a graph showing a wavelength conversion efficiency 7 for a crystallization temperature. Fig. 3 is a graph showing the output power for the crystallization temperature (surface temperature) of the L B0 crystal. Fig. 4 is a graph showing the output power for the crystallization temperature (internal temperature) of the L B0 crystal. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 492229 A7 B7 V. Description of the invention (20) Figure 5 is an explanatory diagram of the relationship between the crystallization temperature and the output power. Figure 6 is a graph showing the variation of laser light output power when the surface temperature of LB ◦ crystal is set to 55 · 4 ° C. FIG. 7 is a display diagram of a second embodiment of the present invention. FIG. 8 is an operation display diagram of the second embodiment of the present invention. FIG. 9 is a schematic view showing the structure of a laser device for processing. Fig. 10 is a diagram showing the processing pattern of the via hole of the laser light. Figure 1 1 shows the change in laser power output from LB0 crystal (please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Description of Symbols] 1 Processing laser Radiation device la laser medium lb total reflection mirror 1 c transmission mirror Id Q — SW 1 e excitation light source 2 Q-SW driver 3 wavelength conversion element 4 temperature adjustment heater 5 temperature control controller 6 wavelength conversion element 7 temperature adjustment heater 8 Temperature controller This paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) -23- 492229 A7 B7 V. Description of invention (21) 9 Laser control device (Please read the precautions on the back first) (Fill in this page again.) The paper size printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 (210X297 mm) -24-