TW491758B - Printing of polishing pads - Google Patents

Description

491758491758

本發明係關於供抛光介電/金屬複合物，半導體，積體 電路及金屬基材之拋光墊，尤以銅及鎢爲較佳基材。、 拋光一般包含對一初始爲粗糙表面的控制磨耗，以產生 平滑鏡面處理表面。其係藉以一拋光墊抵住欲拋光物件表 面以重覆規律動作搓磨，而同時以含細粒子懸浮液溶液， 通常爲漿液狀者，置於拋光墊與工作件間介面。一般所用 的墊是以如聚酯之非平織纖維涵浸一胺基甲酸乙酸，或是 由％充鸽型聚胺基甲酸乙酸而成。此類墊的拋光接觸可受 墊表面紋理，墊上所開溝槽，壓花或開孔於墊而影響。 1996年6月頒予Cook等人之美國專利字號第5,489,233號揭 示一形成具巨紋理與微紋理之墊。此種墊可由模具成型， 壓擠，壓花，鑄型，切割，燒結，或照相蝕刻等方式製 成。 一般而言，拋光墊係以批式方法製造，一墊製成後再製 作另一墊，經常有相當程度的批次差異產生。此種塾差異 性對於半導體晶圓製作有不良影響，因造成了抛光過程的 差異以及最終之產能損失。故需要一種製作墊之方法，其 可得到具有均勻表面之墊，尤其是需要一種可得到具均勻 表面片材之連續方法。從此片材可裁出單獨拋光墊或保持 片材形成捲或帶墊，供下一代拋光工具用。 本發明係關於拋光墊及以印刷製作拋光墊方法。 以下以範例及參考附圖敘述本發明具體實例，其中： 圖1爲可用來得到本發明拋光墊之凹版印刷透視圖。 圖2爲可用來得到本發明拋光墊網版印刷透視圖。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)The present invention relates to polishing pads for polishing dielectric / metal composites, semiconductors, integrated circuits and metal substrates, especially copper and tungsten are preferred substrates. 2. Polishing generally includes controlled abrasion on an initially rough surface to produce a smooth mirror-finished surface. It uses a polishing pad against the surface of the object to be polished and rubs repeatedly. At the same time, a suspension solution containing fine particles, usually a slurry, is placed on the interface between the polishing pad and the work piece. Generally used pads are made of non-woven fibers such as polyester impregnated with urethane, or they are made of% -filled pigeon-type urethane. The polishing contact of such pads can be affected by the surface texture of the pads, the grooves on the pads, embossing or openings in the pads. U.S. Patent No. 5,489,233, issued to Cook et al. In June 1996, discloses the formation of a mat with giant and microtextures. Such mats can be made by mold forming, pressing, embossing, casting, cutting, sintering, or photo etching. Generally speaking, polishing pads are manufactured by a batch method. One pad is made and then the other pad is produced, often with considerable batch differences. This variability has a negative impact on the fabrication of semiconductor wafers, resulting in differences in the polishing process and ultimately lost production capacity. Therefore, there is a need for a method for making a mat which can obtain a mat having a uniform surface, and in particular, a continuous method which can obtain a sheet having a uniform surface. From this sheet, a separate polishing pad can be cut or the sheet can be formed into a roll or tape pad for the next generation of polishing tools. The invention relates to a polishing pad and a method for making a polishing pad by printing. Hereinafter, specific examples of the present invention will be described with examples and with reference to the accompanying drawings, wherein: FIG. 1 is a perspective view of gravure printing which can be used to obtain the polishing pad of the present invention. Fig. 2 is a perspective view of a screen printing method that can be used to obtain the polishing pad of the present invention. -4- This paper size is applicable to China National Standard (CNS) A4 (210X297 mm)

裝 訂 A7 B7 五、發明説明（2 本發明係針對於拋光墊及製造此種拋光墊之一方法，其 車父佳馬連續方法。其中該墊具撓性基材；及緊密貼於該基 材上之具由印刷所得聚合性具凸起型樣之親水性聚合拋光 層。根據一項具體實例，印刷包含凹版印刷法。根據另一 貝車乂佳具體實例，印刷包含網版印刷法。以該印刷法得到 不具研磨物粒子之拋光墊具體實例，並結合含粒子漿液進 订抛光。另一項拋光墊具體實例包含可以印刷法加研磨物 粒子於塾中。具研磨物墊之抛光中，該整與不具研磨物之 反應性抛光液併用。 本發明方法所製成抛光螯含有具以有凹版印刷或網版印 刷形成聚合性具凸起型樣親水性聚合物之拋光層。由印刷 方法得到之聚合性之凸起重覆表面型樣，其具經控制之粒 子大小’型樣，幾何造形及高度。既往技藝中，形成拋光 墊上型樣的方法包括成型、燒結、壓擠、壓花、鸽型或裁 切。這些方法或者不能適於製作連續墊，或者無法以具任 何規律精確方式重覆。以例如凹版或網版印刷方法之印刷 方式’則可得到可應用於抛光整抛光層之精確重覆表面區 型樣。凹版印刷最適於形成具精確，低輪廓聚合性之凸起 型樣之拋光層。網版印刷最適於形成具較高特色之聚合性 之凸起型樣之拋光層。這些聚合性之凸起爲無數聚合性原 料輋頂，其可爲任何高度與外形，以印刷方式形成於該挽 性基材成爲抛光層。聚合性之凸起外形，高度，以及區刑 樣重覆應用，具最小差異，得因在於凹版印刷輪表面上固 定型樣，或是網版印刷法所用網版之固定區型樣。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Binding A7 B7 V. Description of the invention (2 The present invention is directed to a polishing pad and one of the methods for manufacturing such a polishing pad, the car driver Jiama continuous method. The pad has a flexible substrate; and it is closely attached to the substrate According to a specific example, the printing includes a hydrophilic polymerized polishing layer having a convex pattern. According to a specific example, the printing method includes a gravure printing method. According to another specific example of the Bechtel printing method, the printing method includes a screen printing method. This printing method obtains a specific example of a polishing pad without abrasive particles, and combines polishing with particle-containing slurry. Another specific example of a polishing pad includes printing methods, which can add abrasive particles to the cymbals. In the polishing of abrasive pads, The polishing compound is used in combination with a reactive polishing liquid without abrasives. The polishing chew prepared by the method of the present invention contains a polishing layer having a hydrophilic polymer with a convex shape formed by gravure printing or screen printing. By the printing method The obtained polymerized raised and repeated surface pattern has a controlled particle size pattern, geometric shape and height. In the prior art, a method for forming a pattern on a polishing pad These include forming, sintering, pressing, embossing, dove or cutting. These methods are either not suitable for making continuous mats or cannot be repeated in any precise manner. Printing methods such as gravure or screen printing methods' You can get a precise repeating surface area pattern that can be applied to the entire polishing layer. Gravure printing is most suitable for forming a polishing layer with a precise, low-profile polymerized convex pattern. Screen printing is most suitable for forming high-level features. Polymerizable convex type polishing layer. These polymerizable protrusions are countless polymerizable raw material tops, which can be of any height and shape, and are formed by printing on the pullable substrate to become a polishing layer. Polymerizable The convex shape, height, and repeated application of the penalty sample have the smallest differences due to the fixed pattern on the surface of the gravure printing wheel or the fixed pattern of the screen plate used in the screen printing method. Paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 魏 A7 --^^ --- —_ B7 五、發明説明（3 ) 署圖i揭示-種於撓性基材上以印刷製成抛光層之凹版裝 =及万法。於—般之旋凹版。印刷機安裝有—旋凹版，滾 ⑸。該滾w具冑外緣表面2’蚀刻有抛光層之型樣。固 疋區型樣3蚀刻於滾輪i全體表面2。爲簡化故，僅取小部 份型樣顯示。並列間隔於滚輪i爲加壓滾輪4，其於印刷 過程中與滾輪β密接觸。滚輪i部份浸於含有聚合性原 科8(聚合性溶液或懸浮液或—液體低分子量聚合物）之盤 7，且與刮刀6成磨擦接觸，其刮除過量聚合性溶液或懸 浮液，並送過量部份返回盤7。 欲印刷撓性基材片5通過滾輪丨及加壓輪4之間，並以適 當調節滾4保持緊密接觸。此印刷方法有利點在於，聚合 性原料層高度及桊與谷區型樣爲連續施加，並以高精確性 重覆，因爲滾輪1蝕刻型樣係固定尺寸。基材片5與輪it 近接接觸至爲重要，確使能令所有可用聚合性原料傳送到 欲印刷基材。加壓輪4必須與輪j保持恆定作用力及壓力 對基材5，以確保所欲結果。一般保持力量約15〇psi (每 平方英寸磅數），但視原料亦可用5〇_3〇〇 psi範圍之力。聚 合性原料印於基材片後再老化，例如通過圖2老化區1 3之 加熱爐（一般使用75-150 °C溫度），但亦可用如uv輕射之 輻射能將印在基材之聚合性原料老化。所得具老化後具型 樣塗覆之基材再經捲繞，可裁切成各別拋光墊，或可提供 爲連績抛光帶之抛光塾。 詳細旋凹版印刷及旋凹版印刷用輪構造可見於美國專利 字號第4，197,798號’頒予Bardin，於本文併爲參考。 -6 - 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Equipment Wei A7-^^ --- --- B7 V. Description of the invention (3) Figure i reveals-a type of gravure equipment which is printed on a flexible substrate to make a polishing layer. Yu-like spiral intaglio. The printing press is equipped with a rotary gravure and a roller. The roll w has a pattern in which a polishing layer is etched on the outer edge surface 2 '. The solid pattern 3 is etched on the entire surface 2 of the roller i. For simplicity, only a small part of the sample is displayed. The pressure roller 4 is arranged side by side with the roller i, and is in close contact with the roller β during the printing process. The roller i is partially immersed in the disk 7 containing the polymerizable original family 8 (polymerizable solution or suspension or -liquid low molecular weight polymer) and comes into frictional contact with the scraper 6, which scrapes off the excess polymerizable solution or suspension. And send the excess back to plate 7. The flexible substrate sheet 5 to be printed passes between the roller 丨 and the pressure roller 4 and is kept in close contact with the roller 4 appropriately adjusted. This printing method is advantageous in that the height of the polymerizable raw material layer and the valley and valley patterns are continuously applied and repeated with high accuracy, because the roller 1 etching pattern has a fixed size. It is important that the substrate sheet 5 is in close contact with the wheel it to ensure that all available polymerizable materials can be transferred to the substrate to be printed. The pressure wheel 4 must maintain a constant force and pressure on the substrate 5 with the wheel j to ensure the desired result. Generally, the holding force is about 15 psi (pounds per square inch), but depending on the raw material, a force in the range of 50 to 300 psi can be used. The polymerizable material is printed on the substrate and then aged, for example, through a heating furnace in the aging area 13 of Figure 2 (usually using a temperature of 75-150 ° C), but it can also be printed on the substrate with radiation energy such as UV light. Aggregation of polymerizable raw materials. The obtained aging-coated substrate is wound and then cut into individual polishing pads, or it can be provided as a polishing pad for successive polishing tapes. The detailed rotary gravure printing and rotary gravure wheel construction can be found in U.S. Patent No. 4,197,798 'to Bardin, which is incorporated herein by reference. -6-This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm)

裝 訂 % 491758 A7 _____B7 五、發明說明（4 ) 圖2揭示一種網版印刷裝置及方法，其可用於產生本發 明之拋光墊。網版印刷係透過開放網版而分散聚合性原料 而進行，於懸浮液中可加入或不加入研磨物。網版固定區 型樣界足出聚合性原料之重覆區型樣，其係透過網版區型 樣分散。撓性基片基材9由一捲筒供給，並與由一捲筒供 應之網版樣板1 0爲並列位置。以一聚合性原料（可爲溶液 或懸浮液或液體低分子量聚合物形成）i 1置與樣板1 〇接 觸，由刮刀12強迫進入並通過樣板10型樣，並接觸基材 9。該樣板10與基材9上聚合性原料11通過老化區13，其 可爲一種烘爐（一般使用75-150°C溫度）或例如UV輻射， 以老化基材上聚合性原料。該只樣板1 〇於老化後移除並 捲繞。所得具老化型樣塗覆1 4之基材經捲繞、可裁切各 別拋光墊或爲拋光帶。 以凹版或網版印刷技術製作拋光墊，可得到具單一連續 區之連續拋光表面，或是分成各別見拋光表面區段，由其 間之溝或道分開。這些各別區形狀可爲任何幾何形（圓， 方，三角，多角，等之），然以六角爲佳，因其易於高密 度、規則包裝。 這些區之一 般尺寸如下： 特色 各別區直徑 各別區厚度 溝寬 尺寸 (mm) (mm) (mm) 範圍 1-25 0.1-10 0.1-15 較佳範圍 3-15 0.3-3 0.3-3 最佳範圍 5-10 0.5-2 0.5-2 將各別區之有利原因爲： 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 491758 A7Binding% 491758 A7 _____B7 V. Description of the Invention (4) Figure 2 discloses a screen printing device and method, which can be used to produce the polishing pad of the present invention. The screen printing is performed by dispersing a polymerizable raw material by opening the screen, and the abrasive may be added or not added to the suspension. The screen pattern fixed area pattern boundary shows the repeated pattern of polymerizable materials, which is dispersed through the screen pattern pattern. The flexible substrate base material 9 is supplied from a roll and is juxtaposed with the screen template 10 supplied from a roll. A polymerizable raw material (which may be a solution or a suspension or a liquid low molecular weight polymer) i 1 is placed in contact with the sample plate 10, forced into by the scraper 12 and passed through the sample plate 10, and contacts the substrate 9. The template 10 and the polymerizable raw material 11 on the substrate 9 pass through an aging zone 13, which may be an oven (generally using a temperature of 75-150 ° C) or, for example, UV radiation, to age the polymerizable raw material on the substrate. The template 10 was removed and wound after aging. The obtained substrate coated with aging pattern 14 is wound, and can be cut into individual polishing pads or polishing tapes. The polishing pad is made by gravure or screen printing technology to obtain a continuous polishing surface with a single continuous area, or it can be divided into separate polishing surface sections, separated by grooves or channels. The shape of these individual zones can be any geometry (circle, square, triangle, polygon, etc.), but hexagonal is preferred because it is easy to package with high density and regularity. The general dimensions of these zones are as follows: Features Individual zone diameters Individual zone thickness Groove width dimensions (mm) (mm) (mm) Range 1-25 0.1-10 0.1-15 Preferred range 3-15 0.3-3 0.3-3 The optimal range is 5-10 0.5-2 0.5-2. The favorable reasons for each area are: This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 491758 A7

發明説明 抛光墊由網版印刷製成後，必須由成網配方中移去水 份，若存在連續塗覆或層時，塗覆或層上會產生不可接受 之裂痕。此由各別區避免。 各別區周圍之溝道有助漿液（或活性液體）沾墊表面傳 送，並移除拋光作業時之抛光碎片。 本發明所用撓性基材可含一層或多層，且可包含結合一 體之層組合。該基材較佳爲可由捲拉出或易於捲2捲i撓 性片。較佳基材爲不腐蝕金屬，如鋁或不銹鋼。其餘較佳 基材爲塑膠，如工程塑膠，例如聚醯胺，聚亞醯胺，及/ 或聚酯，尤其是”PET"聚（乙烯對酞酸）。 本發明較佳撓性基材具約化^:^毫米厚度。較佳具體之 一項中，該支撑層厚度小於5毫米，較佳小於2毫米，更 佳小於1毫米。 本發明拋光墊之抛光層包含一親水聚合性材料，其選擇 性可填入研磨粒子。該拋光層較佳爲（i)密度大於〇.5 g/m3 ; (u)臨界表面張力大於或等於34毫牛頓/米；（⑴） 張力係數爲0.02到5.00 GigaPascals ; (i v) 3 0。(：張力係數對 6〇°C張力係數比例由1〇到25 ; (v)硬度由25到8〇 Sh〇re D ; (vi)破裂應力爲 300-6000 psi(2」_41 4 Megapascals); (vii)張力強度由 1〇〇〇 到 15 〇〇〇 psi(7-1〇5 Megapascais); 及（viii)破裂延長率達到5〇〇%。較佳一項具體實例中，該 抛光層尚包含聚多之軟區間及硬區間。 提供拋光層具有臨界表面張力大於或等於每公尺34 milliNewtons，較佳大於或等於3 7，而最佳大於或等於每 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Description of the Invention After the polishing pad is made by screen printing, the water must be removed from the web forming formula. If there is a continuous coating or layer, unacceptable cracks may occur on the coating or layer. This is avoided by individual districts. The channels around each area help the slurry (or active liquid) to transfer to the pad surface and remove the polishing debris during polishing operations. The flexible substrate used in the present invention may contain one or more layers, and may include a combination of layers. The substrate is preferably a roll-shaped flexible sheet that can be pulled out or rolled easily. The preferred substrate is a non-corrosive metal such as aluminum or stainless steel. The remaining preferred substrates are plastics, such as engineering plastics, such as polyamide, polyimide, and / or polyester, especially "PET " poly (ethylene terephthalic acid). The preferred flexible substrate of the present invention is Reduced thickness: ^ mm thickness. In a preferred embodiment, the thickness of the support layer is less than 5 mm, preferably less than 2 mm, and more preferably less than 1 mm. The polishing layer of the polishing pad of the present invention includes a hydrophilic polymer material, Its selectivity can be filled with abrasive particles. The polishing layer is preferably (i) a density greater than 0.5 g / m3; (u) a critical surface tension greater than or equal to 34 millinewtons / m; (ii) a tension coefficient of 0.02 to 5.00 GigaPascals; (iv) 30. (: Tension coefficient to 60 ° C ratio of tension coefficient from 10 to 25; (v) Hardness from 25 to 80Shore D; (vi) Rupture stress of 300-6000 psi (2 "_41 4 Megapascals); (vii) tensile strength from 10,000 to 15,000 psi (7-10.5 Megapascais); and (viii) rupture elongation rate of 500%. Better one In the specific example, the polishing layer further includes a soft interval and a hard interval. The critical surface tension of the polishing layer is greater than or equal to 34 m per meter. illiNewtons, preferably greater than or equal to 3 7, and best greater than or equal to -8- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 491758 A7 B7 五、發明説明（6 ) 公尺40 milliNewtons之較佳親水性聚合材料列於以下與其 之傳統聚合物之比較中。 臨界表面張力界定出一固體表面 之沾溼性，亦即在最低表面張力下，一液體仍能在固體上 具有大於密度之接觸角度 。因此，見較高臨界表面張力聚 合物較易溼，故較爲親水 0 聚合物 臨界表面張力（mN/m) 聚四氟乙缔 19 聚二甲基矽烷 24 矽膠 24 聚丁二烯 31 聚乙烯 31 聚苯乙烯 33 聚丙烯 34 聚酯 39-42 聚丙烯胺 35-40 聚乙烯醇 37 聚甲基丙烯甲酯 39 聚氯乙婦 39 聚磺酸 41 尼龍6 42 聚脲胺 45 聚碳酸鹽 45 較佳具體實例一項中， 該蟄之拋光層係由以下之1衍 生： -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 491758 A7 --------B7 五、發明説明（7 ) 1 ·丙烯基胺基甲酸乙酯； 2 ·丙烯基環氧樹脂； 3·具有羧基，苯基，或醯胺基之乙烯未飽和有機化合 物； 4·具不飽和炭基之氨基塑膠衍生物； 5 ·具至少一丙烯基之異氰酸酯衍生物； 6 .***； 7 ·胺基曱酸乙g旨； 8 ·聚丙晞，醯胺； 9 ·乙晞/酯共聚物或其衍生酸； 1 〇 .聚乙烯醇； 1 1 ·聚甲基丙晞甲g旨； 1 2 .聚磺酸； 1 3 .聚酿胺； 1 4 ·聚碳酸酯； 1 5 ·聚氯乙烯： 1 6 ·環氧樹脂： 17.以上之共聚物；或 1 8 ·任何以上之組合。 本發明另一項較佳具體實例中，該拋光層材料包含（i ) 聚多於拋光時抗拒塑性流之硬區間；及（2 )聚多於拋光時 對塑性流較無抗拒之低硬區間。此種特性組合提供雙重機 制，於抛光二氧化矽及金屬於特別有利。該硬區間可使凸 起與拋光表面激烈接觸，而軟區間增加凸起與被拋光基材 -10- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) A7 B7 五、發明説明（8 表面間之拋光互動。 任何硬相尺寸（高，寬或長）較佳小於1〇〇微米，更佳小 於50微米，尤佳小於25微米，最佳小於1〇微米。同樣 的，該非硬相較佳小於i 00微米，更佳小於5〇微米，尤佳 小於25微米，而最佳小於1〇微米。較佳雙相材料包含聚 胺基甲酸乙酯聚合物，具有軟區（其提供非硬相）及硬區 (其提供硬相）。各區以兩（硬與軟）聚合物區間之不相容性 之相分離，而於拋光層成型時產生。 其它具硬與軟區聚合物亦可適用，包含乙烯共聚物，共 聚酯，塊共聚物，聚磺酸共聚物，及丙烯酸共聚物及軟區 產生，（2 )由墊原料内結晶區及非結晶區產生；（3 )由混 熔硬聚合物及軟聚合物產生；或（4)由結合聚合物與有機 或供機％料產生。可用之組合物包含共聚物，聚合物摻配 填入聚合物網路等等。 另一項本發明具體實例中，可製作薄拋光層小於約2 0 0 微米，較佳小於1 〇 〇微米，更佳小於5 〇微米，且包含具有 開孔及/或不同大小尺寸微孔隙之任意表面結構。 結合薄基層及薄拋光層可提供特高之抛光效果，因爲當 硬支撑體壓住薄拋光墊抵住（且該墊成相對移動）欲拋光基 材時，可得到更精確及可預期拋光互動。此拋光墊可製成 非常緊密配合，且（配合硬度支撑（本）可提供可預期之壓 縮性及平面化長度。”平面化長度”係指跨越拋光墊表面 足跨幅，其實質位於單一平面，且於拋光時保持爲單一平 面’使所有凸峰均被抛光，較低凸峰不會被拋光，除非或 -11 - 發明説明（9 ) 直到較高凸峰消失到較短凸峰高度。 根據本發明形成之拋光墊，具有實質不含巨缺陷之拋光 層。”巨缺陷"係指毛邊或其它拋光墊表面上凸起物，其 尺寸（無論寬、高或長度）大於25微米者。巨缺陷不應與，， 微凸起”混爲一談。微凸起係指毛邊或其它抛光整表面上 凸起物’其尺寸（無論寬，高，或長度）小於1〇微米者。 咸知居微&起在特南精確抛光時有其優點，特別在製作半 導體文件方面，較佳具體實例之一項中，該拋光層在拋光 介面提供大量之微凸起。 爲使親水聚合物拋光層對撓性基材具足夠黏性，該基材 可加入一面漆或黏性促進劑。 本發明拋光墊所用傳統抛光組合物或漿液以抛光金屬複 合材料，半導體，或積體電路者，通常含有細分之研磨粒 子於水性漿液或懸浮液中。該欲抛光零件或基材浸於浴中 或經溼潤，抛光墊壓抵住基材，而墊與基材間相互移動。 研磨粒子在承受負荷下壓抵住基材，而墊之外緣動作使研 磨粒子移㈣過基材表面，磨耗並減少基材之表面體積。 移除速率係由加壓程度，抛光塾速度，以及該研磨粒 化學活性而定。 抛光速率可藉加人成份於拋光組合物中而提升，直 對基材具浸蝕性。此方法稱爲化學機械抛光(CMP)，且 爲在拋光半導體及丰壤；、 -…丄：： 面較佳技術，尤其是對積 月豆电路而㊂〇抛光組合物φ 物中加入添加物，可加速基材上合 屬成份溶解，如介雪/么思卞人以 至 J 金屬複合材料基材者，例如積體 491758 A7 B7 五、發明説明（1〇 ) 路。其目的在於優先移除電路之金屬部份，使所餘部份與 一絕緣或介電爲同平面表面，尤其組合含有二氧化矽時。 此方法稱爲平面化。如過氧化氫之氧化劑亦可加入C MP 所用抛光組合物中，以使金屬表面轉化爲氧化物，接受 CMP。 半導體，積體電路晶圓等C MP所用一般組合物，揭示 於1993年1 1月23曰頒予Brancaleoni等人之美國專利第 5,264,010號；1995年1月1 7日頒予Cook等人之美國專利 第5,382,272號；1995年1 2月1 9日頒予Brancaleoni等人之 美國專利第5,476,606號，及1997年1 2月2日頒予Wang等 人之美國專利第5,693,239號。其所列雖爲極佳拋光組合 物，然成立有一種組合物，其可移除極薄層而不刮傷表 面，且可用於需要高平面化半導體元件之拋光基材。 此等傳統拋光組合物，一般爲漿液，而其中之研磨粒子 表面面積約爲40-430 m2/g，集團平均尺寸小於500 nm，且 力量足以抗拒克服粒子間之凡得瓦爾力。粒子表面面積係 以氮吸收法測量，見於S. Brunanure，P.EL Emmet and I. Teller，J· Am. Chemical Society，Vol. 60，309 頁（1938 )。粒 子可佔漿液重量的0.5%-55%，視所需研磨而定。 研磨粒子可爲平均尺寸範圍在25-500 nm之初級粒子， 或爲以初級粒子與具平均尺寸範圍在25-500 nm結塊較小 粒子之混合物。本發明方法之一項較佳具體實例中，研磨 粒子平均尺寸在2 5與500 nm範圍。一般可用研磨粒子爲 氧化鋁，二氧化鈽，鑽石，氧化矽，氧化鈦等等。此類粒 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) B7 五、發明説明（11 ) 子及結塊體可被包覆或懸浮 拋光表面機率最小。 故在保持硬度同時，刮傷欲 =液中粒子較佳勿沉降且勿集塊。然而咸知依初級粒子 及：塊粒子比例而定’漿液中粒子會沉降，且需如以混合 (機械方式使再懸浮。 反重f中可力口入約0·01-10·0重量％之氧化劑。多種氧 d勾可使用，例如氧化金屬鹽，氧化金屬錯合物，鐵鹽 肖酸I酸’氰化鐵叙等等，銘鹽，鋼鹽，叙鹽，錢 鹽：四價銨鹽，磷酸鹽，過氧化物，氯酸鹽，㈣酸鹽， 元、酸鹽，過碘酸鹽，過鎂酸鹽，過硫酸鹽等等及其混合 此氧化知彳可加入本發明拋光組合物，其中膠體硫爲主 要拋光成份，不存在其它研磨物。 漿敗重量中可加入約0 01_10重量％濃度之有機添加物。 ㉙〜加物用作對粒子之包覆懸浮方式，以使硬質小粒子 刮傷可能降到最低。此外，這些添加物可以改良表面品 質，附著於被拋光表面，保護氧化物表面及g光時之配合 P早礙層。此有機添加物亦可配合改良欲拋光半導體表面之 全體晶圓一致性。較佳添加劑含羧基或胺基且爲有機液 體’例如聚乙烯吡啶，對酞酸如銨氫對酞酸及鉀對酞酸及 磷酸鹽如乙基二磷酸。 一般而言’亦可加入有機酸。此酸定義爲含有具可解離 質子I功能基。包括但不限於羧基，羥基，磺酸基及磷酸 基。複基及羥基爲較佳，因其可提供最多有效有機酸。可 用酸類包括擰檬酸，乳酸，蘋果酸，及酒石酸。 -14- 本紙張尺度適财國g家標準(CNS) A4規格(21G x 297公爱) 491758 A7 B7 五、發明説明（12 ) 此類有機添加物亦可用於以氧化矽膠體爲主要拋光成份 之抛光組合物中。 爲進一步使漿液不產生沉澱，凝聚，及結塊，多種添加 物如界面劑，聚合安定劑，或其它表面活性分散劑亦可使 用0 各種物理，化學，及機械參數均影響表面拋光。拋光壓 力爲另一項可控制拋光及最佳化之外力影響。相當低拋光 壓力得到最佳結集，然並非必要，因爲粒子在拋光時可避 免受壓通過由有機添加物產生之包覆層。 以下範例可説明本發明。除非另有説明，所有數目及百 分比皆爲重量基準。 範例 範例1 本範例説明以凹版印刷法製成墊達成良好拋光效果之能 力。 使用圖1所示凹版印刷法，在原2 mm聚乙烯對酞酸酯 (PET )板預塗有促黏塗覆者上，印刷出拋光圖案。一水性 含2重量％ (40容積％)聚合性microballons (Expancel)之乳 膠胺基甲酸乙酯（Witco之W242 )加入盤7。以蝕刻出供拋 光墊之拋光圖案設計之凹版滚輪1施加抛光層。滾輪在加 壓輪4使用壓力爲150 psi。該拋光層經老化形成具有含均 勻圖案聚合性凸起之拋光層。該板以模具切成28英吋直 徑墊。以感壓黏劑塗在墊背面，附在下述之拋光機。 該墊用以拋光沉積在矽晶圓上之TEOS氧化物膜。以一 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 491758 A7 B7 五、發明説明（13 ) 台Strasbaugh 6DS-SP進行抛光，壓力9 psi板速20 rpm，載 體速爲15 rpm。漿液爲Rodel之ILD1300，流率爲125 mil/min。無論拋光時或兩晶圓間，均不須處理塾。所拋光 晶圓具極佳平面性，良好外觀，且去除物料速率極佳。 範例2 此範例説明以網版印刷法製成墊達成良好拋光效果之能 力。墊中加入研磨物，併同不含粒子活性液體與墊拋光 鎢。 參考圖2所示網版印刷法，取預塗有促黏塗覆之0-0.15 mm間厚度之聚乙烯對酞酸酯（PET )膜9爲基材，以填料乳 膠配方1 1作網版印刷。該填料乳膠配方含水性乳膠（Air Products之乙烯醋酸乙烯乳化液A-460)及研磨物填料0.25 微米之氧化鋁混合物。填料量爲總配方量重量之7 5 %， 而總固形物量爲7 0 %。以一不銹鋼鏤空薄板1 0與該P E T 膜緊密接觸。該鏤空板具7 9 %開放面積，含有6 mm孔直 徑之六角開口，以35 mil寬肋而分開。該填料乳膠配方以 刮刀片1 2施加在該整丁鏤空板。此力量強制該乳膠配方 原料通過鏤空板到P E T膜。所得爲抛光層之層含有隔離開 之六角區，於烘爐中以60°C老化形成1 mm均勻厚度拋光 層，且具有均勻分佈之凸起。PET膜背上再塗佈一層感壓 黏劑，以所得拋光墊依以下所述拋光-鎢膜。 由上述製成之塗覆PET膜切下一拋光墊，附在一台12” Leco AP-300抛光機之拋光板上，使用壓力7psi，板速56 rpm，載體速度1 5 0 rpm。該塾配合使用以破化嶙爲基之不 -16- 本纸張尺度適用中國國家標準(CNS) A4規格(210X 297公釐） 491758 A7 B7 五、發明説明（14 ) 含粒子活性液體爲氧化成份（Rodel公司之MSW2000B)，供 給速率爲20 ml/min。以一只3" 100-grit TBW鑽石盤，轉速 48 rpm，對墊作同向處理。以該墊對鎢膜抛光，得到穩定 7 g/min之鑄移除率。 此項範例中，該網版印刷法呈現以下優於傳統方法所製 墊之主要優點：（1)在75 %及以上之高填料率下，烘爐内 表面裂開不再發生，及（2 )該印刷法可自動產生供液體流 過墊表面之通道。傳統墊製造法中，上述通常須另外製造 步驟處理。. 上述討論並不是對本發明作任何範圍上的限制。舉例而 言，其它如聚合物micro-balloons之填料可加入乳膠配方 中，以控制形變及/或拋光效果，塗覆有聚合物之氧化鋁 塊體亦可用作研磨物，而鏤空板可爲鋁或塑膠。 範例3 使用範例2之網版印刷法，製成含有72.5重量％研磨粒 子塊體之抛光墊，其中該研磨物粒子塊體含有以聚合性結 合劑固定之氧化鋁粒子。以所得2 4英吋直徑墊拋光晶 圓，機械爲Strasbaugh 6DS-SP。活性液體爲Rodel公司之 MSW2000Btm，供給率爲150 ml/min。板速80 rpm，載體速 度83 rpm，壓力爲7 psi。以在7 psi壓力下之100-grit RESI 盤同向處理墊。達到1000到2000A之鎢移除率。 範例4 取類似範例3之網板印刷拋光墊在Westech 372U抛光機 上拋光銅晶圓。所用活性液體爲Rodel公司實驗級過氧化 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 491758 A7 B7 五 、發明説明（15 ) 氫基配方（HR32-1 )，供給速率爲150 ml/min。該蟄以100-grit TBW鑽石盤預處理。板速爲80 rpm，載體速度爲83 rpm，壓力爲4 psi。於晶圓間作後處理下，可達到6000到 7000A銅移除率。 範例5 取類似範例2所述網版印刷拋光墊貼合在不同下墊 (Rodel 公司之 Suba IVtm&DPM1000tm)，以 Westech 372U 拋光機評估銅拋光。活性液體反拋光處理條件均與範例4 者相同。此處發現下墊之壓縮性會相當程度的影響銅移除 率，下墊愈易壓縮，銅移除率愈高。無下墊，使用Suba IVTM，及使用DPM1000tm的移除率各爲3000到5000A， 8000到9000A，及12,000到14,000A。此移除率均爲不力口入 晶圓間後處理而達到。 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Equipment 491758 A7 B7 V. Description of the invention (6) The preferred hydrophilic polymeric materials of 40 milliNewtons are listed below in comparison with their traditional polymers. The critical surface tension defines the wettability of a solid surface, that is, under the lowest surface tension, a liquid can still have a contact angle greater than the density on the solid. Therefore, it is seen that polymers with higher critical surface tension are easier to wet and are therefore more hydrophilic. 0 Critical surface tension of polymer (mN / m) Polytetrafluoroethylene 19 Polydimethylsilane 24 Silicone 24 Polybutadiene 31 Polyethylene 31 Polystyrene 33 Polypropylene 34 Polyester 39-42 Polyacrylamine 35-40 Polyvinyl alcohol 37 Polymethyl methacrylate 39 Polyvinyl chloride 39 Polysulfonic acid 41 Nylon 6 42 Polyureaamine 45 Polycarbonate 45 In one of the preferred specific examples, the polishing layer of the gadolinium is derived from one of the following: -9- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 491758 A7 ------- -B7 V. Description of the invention (7) 1. Acrylic urethane; 2. Acrylic epoxy resin; 3. Ethylene unsaturated organic compound having carboxyl, phenyl, or amido groups; Saturated carbon-based amino plastic derivatives; 5. Isocyanate derivatives with at least one propenyl group; 6. Diethyl ether; 7. Ethylaminoacetic acid; 8; Polyacrylamide, amidine; 9; Ethylacetate / ester copolymerization Or its derived acid; 1．Polyvinyl alcohol; 1 1 · Polymethylpropanemethoxide; 1 2 .Polysulfonic acid 1 3. Polyvinylamine; 1 4 · Polycarbonate; 1 5 · Polyvinyl chloride: 1 6 · Epoxy resin: 17. Copolymer of above; or 1 8 · Any combination of above. In another preferred embodiment of the present invention, the material of the polishing layer includes (i) a hard region having more plastic flow than resisting plastic flow during polishing; and (2) a hard region having more plastic flow than resisting plastic flow during polishing. . This combination of properties provides a dual mechanism, which is particularly advantageous for polishing silicon dioxide and metals. The hard section can make the protrusions come into intense contact with the polished surface, while the soft section can increase the protrusions and the substrate to be polished. -10- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) A7 B7 V. Description of the invention (8 Polishing interaction between surfaces. Any hard phase size (height, width, or length) is preferably less than 100 microns, more preferably less than 50 microns, even more preferably less than 25 microns, and most preferably less than 10 microns. Similarly, the non- The hard phase is preferably less than 100 μm, more preferably less than 50 μm, even more preferably less than 25 μm, and most preferably less than 10 μm. The preferred biphasic material comprises a polyurethane polymer with a soft region (which Provides a non-hard phase) and a hard region (which provides a hard phase). Each region is separated by an incompatible phase between two (hard and soft) polymer intervals, and is generated when the polishing layer is formed. Others have hard and soft regions Polymers are also applicable, including ethylene copolymers, copolyesters, block copolymers, polysulfonic acid copolymers, and acrylic copolymers and soft regions. (2) Generated from crystalline and amorphous regions in the mat material; ( 3) produced by mixing hard and soft polymers; or (4) It is produced by combining polymers with organic or organic materials. Useful compositions include copolymers, polymer blends filled into polymer networks, etc. In another embodiment of the present invention, a thin polishing layer can be made less than about 200 microns, preferably less than 100 microns, more preferably less than 50 microns, and includes any surface structure with open pores and / or micropores of different sizes and sizes. The combination of a thin base layer and a thin polishing layer can provide a particularly high Polishing effect, because when the hard support body presses the thin polishing pad against (and the pad moves relative to) the substrate to be polished, more accurate and predictable polishing interaction can be obtained. This polishing pad can be made very close fit, and (With hardness support (this), it can provide predictable compressibility and planarization length. "Planarization length" refers to the span of the foot across the surface of the polishing pad, which is essentially located on a single plane and remains a single plane during polishing. All convex peaks are polished, the lower peaks will not be polished unless or -11-Invention Description (9) until the higher peaks disappear to the shorter peak height. The polishing pad formed according to the present invention, There is a polishing layer that does not substantially contain giant defects. "Giant defects" refers to protrusions on the surface of burrs or other polishing pads whose size (whether width, height or length) is greater than 25 microns. Giant defects should not be associated with ,, "Micro-protrusions" are conflated. Micro-protrusions refer to burrs or other polished objects on the polished surface whose size (whether width, height, or length) is less than 10 microns. Xianzhiju Micro & Tenan has its advantages in accurate polishing, especially in the production of semiconductor documents. In one of the preferred specific examples, the polishing layer provides a large number of micro-protrusions on the polishing interface. In order to make the hydrophilic polymer polishing layer to the flexible substrate It has sufficient viscosity, and the substrate can be added with a top coat or adhesion promoter. The traditional polishing composition or slurry used in the polishing pad of the present invention to polish metal composite materials, semiconductors, or integrated circuits usually contains finely divided abrasive particles In an aqueous slurry or suspension. The part or substrate to be polished is immersed in a bath or wet, and the polishing pad is pressed against the substrate, and the pad and the substrate move to each other. The abrasive particles are pressed against the substrate under a load, and the outer edge of the pad moves the abrasive particles across the surface of the substrate, abrading and reducing the surface volume of the substrate. The removal rate depends on the degree of pressure, the polishing rate, and the chemical activity of the abrasive particles. The polishing rate can be increased by adding ingredients to the polishing composition, which is etchable to the substrate. This method is called chemical mechanical polishing (CMP), and is used to polish semiconductors and rich soils ;, -... 丄 :: a better technique, especially for the moon moon bean circuit, and adding additives to the polishing composition φ It can accelerate the dissolution of the constituents on the substrate, such as those of Jie Xue / Moss and even J metal composite materials, such as the product 491758 A7 B7. 5. Description of the invention (1〇) Road. The purpose is to preferentially remove the metal part of the circuit so that the remaining part is in the same plane as an insulation or dielectric, especially when the combination contains silicon dioxide. This method is called planarization. An oxidant such as hydrogen peroxide can also be added to the polishing composition used by the CMP to convert the metal surface into an oxide and accept CMP. The general composition used in CMPs such as semiconductors, integrated circuit wafers, etc., is disclosed in US Patent No. 5,264,010 issued to Brancaleoni et al. On January 23, 1993; the US issued to Cook et al. On January 17, 1995 Patent No. 5,382,272; U.S. Patent No. 5,476,606 issued to Brancaleoni et al. On December 19, 1995, and U.S. Patent No. 5,693,239 issued to Wang et al. On December 2, 1997. Although listed as an excellent polishing composition, there is a composition that can remove very thin layers without scratching the surface, and can be used for polishing substrates that require highly planar semiconductor components. These traditional polishing compositions are generally slurries, and the surface area of the abrasive particles is about 40-430 m2 / g, the average group size is less than 500 nm, and the force is sufficient to resist the van der Waals force between particles. The surface area of the particles is measured by the nitrogen absorption method and is found in S. Brunanure, P. EL Emmet and I. Teller, J. Am. Chemical Society, Vol. 60, p. 309 (1938). Granules can account for 0.5% -55% of the weight of the slurry, depending on the grinding required. The abrasive particles may be primary particles having an average size in the range of 25-500 nm, or a mixture of primary particles and smaller particles agglomerated with an average size in the range of 25-500 nm. In a preferred embodiment of the method of the present invention, the average size of the abrasive particles is in the range of 25 to 500 nm. Generally available abrasive particles are alumina, hafnium dioxide, diamond, silica, titanium oxide, and the like. This kind of grain -13- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) B7 V. Description of the invention (11) Seeds and agglomerates can be coated or suspended The probability of polishing the surface is the smallest. Therefore, while maintaining the hardness, the desire to scratch = particles in the liquid should not settle and should not agglomerate. However, it is known that the particles in the slurry will settle according to the proportion of the primary particles and the block particles, and the particles need to be resuspended by mixing (mechanical method). About 0 · 01-10 · 0 wt% A variety of oxygen oxidants can be used, such as oxidized metal salts, oxidized metal complexes, iron salts, oxalic acid, acid, iron cyanide, etc., Ming salt, steel salt, Syria salt, money salt: Salts, phosphates, peroxides, chlorates, phosphonates, yuan, acid salts, periodate, permagnesium, persulfate, etc. and their mixtures Colloidal sulfur is the main polishing component, and there are no other abrasives. Organic additives with a concentration of about 0 01-10% by weight can be added to the weight of the pulp. 加 ~ Additives are used as a coating and suspension method for particles to make the hardness small. Particle scratches may be minimized. In addition, these additives can improve the surface quality, adhere to the surface to be polished, protect the oxide surface and the P early barrier layer when the light is light. This organic additive can also be used to improve the semiconductor to be polished Overall wafer consistency on the surface. Good additives contain carboxyl or amine groups and are organic liquids such as polyvinylpyridine, terephthalic acid such as ammonium hydrogen terephthalic acid and potassium terephthalic acid and phosphates such as ethyl diphosphate. Generally speaking, organic acids can also be added. This acid is defined as containing a functional group with a dissociable proton I. Including but not limited to carboxyl, hydroxyl, sulfonic and phosphate groups. Complex and hydroxyl groups are preferred because they provide the most effective organic acids. Available acids include lemon Acid, lactic acid, malic acid, and tartaric acid. -14- The paper size is suitable for the national standard (CNS) A4 size (21G x 297 public love) 491758 A7 B7 5. Description of the invention (12) Such organic additives are also It can be used in polishing composition with silicon oxide colloid as the main polishing component. In order to further prevent the slurry from precipitation, agglomeration, and agglomeration, various additives such as interface agents, polymerization stabilizers, or other surface-active dispersants can also be used. 0 Various physical, chemical, and mechanical parameters affect surface polishing. Polishing pressure is another effect that can control polishing and optimization of external forces. Quite low polishing pressure is best to achieve, but it is not necessary, To prevent particles from pressing through the coating produced by organic additives during polishing. The following examples illustrate the invention. Unless otherwise stated, all numbers and percentages are based on weight. Examples Example 1 This example illustrates gravure printing. The ability to make a pad to achieve a good polishing effect. Using the gravure printing method shown in Figure 1, the original 2 mm polyethylene terephthalate (PET) board was pre-coated with an adhesion-promoting coating to print a polishing pattern. Water-based Latex urethane (Witco's W242) containing 2% by weight (40% by volume) of polymerizable microballons (Expancel) was added to disc 7. A polishing layer was applied to etch a gravure roller 1 designed for the polishing pattern of a polishing pad. Roller The pressure used on the pressure wheel 4 is 150 psi. The polishing layer is aged to form a polishing layer having uniform pattern polymerizable protrusions. The board was cut into 28-inch diameter pads with a die. Apply pressure sensitive adhesive to the back of the pad and attach it to the polisher described below. The pad is used to polish a TEOS oxide film deposited on a silicon wafer. -15- This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 491758 A7 B7 V. Description of the invention (13) Polished by Strasbaugh 6DS-SP, pressure 9 psi board speed 20 rpm, The carrier speed was 15 rpm. The slurry was Rodel's ILD1300 with a flow rate of 125 mil / min. There is no need to process plutonium during polishing or between two wafers. The polished wafer has excellent flatness, good appearance, and excellent material removal rate. Example 2 This example illustrates the ability of a pad made by screen printing to achieve good polishing results. Abrasives are added to the pad and polished with tungsten without particle active liquid and pad. Referring to the screen printing method shown in FIG. 2, a polyethylene terephthalate (PET) film 9 pre-coated with a thickness of 0-0.15 mm is used as a substrate, and a filler latex formula 1 1 is used as a screen. print. The filler latex formula contains a water-based latex (Air Products's ethylene vinyl acetate emulsion A-460) and an alumina mixture of 0.25 micron of abrasive filler. The amount of filler is 75% of the total formula weight, and the total solid content is 70%. A stainless steel hollow sheet 10 is in close contact with the P E T film. The perforated plate has a 79% open area, contains hexagonal openings with a diameter of 6 mm, and is separated by 35 mil wide ribs. The filler latex formulation was applied to the dicing hollow board with a doctor blade 12. This force forces the ingredients of the latex formula to pass through the hollow plate to the PET film. The layer obtained as a polishing layer contained isolated hexagonal regions, and was aged at 60 ° C in an oven to form a polishing layer with a uniform thickness of 1 mm, with uniformly distributed protrusions. A layer of pressure-sensitive adhesive was coated on the back of the PET film, and the resulting polishing pad was polished as described below for the tungsten film. A polishing pad cut from the coated PET film made above was attached to the polishing plate of a 12 ”Leco AP-300 polishing machine using a pressure of 7psi, a plate speed of 56 rpm, and a carrier speed of 150 rpm. Cooperate with the use of the basis of broken 嶙 -16- This paper size applies the Chinese National Standard (CNS) A4 specifications (210X 297 mm) 491758 A7 B7 V. Description of the invention (14) Active liquid containing particles is an oxidizing component ( Rodel's MSW2000B), with a feed rate of 20 ml / min. A 3 " 100-grit TBW diamond disc was rotated at 48 rpm in the same direction as the pad. The tungsten film was polished with this pad to obtain a stable 7 g / The casting removal rate of min. In this example, the screen printing method has the following main advantages over the traditional method: (1) the inner surface of the oven cracks at a high filling rate of 75% and above It no longer occurs, and (2) the printing method can automatically generate a channel for the liquid to flow through the surface of the pad. In the traditional pad manufacturing method, the above usually requires additional manufacturing steps .. The above discussion does not limit the scope of the invention in any way. .For example, other fillers such as polymer micro-balloons Added to latex formulations to control deformation and / or polishing effects, alumina blocks coated with polymer can also be used as abrasives, and hollowed out plates can be aluminum or plastic. Example 3 Screen printing method using Example 2 A polishing pad containing 72.5% by weight abrasive particle blocks was prepared, wherein the abrasive particle block contained alumina particles fixed with a polymerizable binder. The wafer was polished with the obtained 24 inch diameter pad, and the machine was Strasbaugh 6DS -SP. The active liquid is MSW2000Btm from Rodel, with a feed rate of 150 ml / min. The plate speed is 80 rpm, the carrier speed is 83 rpm, and the pressure is 7 psi. A 100-grit RESI disc co-processing pad under 7 psi pressure Reached a tungsten removal rate of 1000 to 2000A. Example 4 A screen printing polishing pad similar to Example 3 was used to polish a copper wafer on a Westech 372U polishing machine. The active liquid used was Rodel's experimental-grade peroxide-17. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 491758 A7 B7 V. Description of the invention (15) Hydrogen-based formula (HR32-1), supply rate is 150 ml / min. The rate is 100-grit TBW Diamond disc pretreatment. Plate speed 80 rpm, carrier speed is 83 rpm, and pressure is 4 psi. After post-processing between wafers, it can reach a copper removal rate of 6000 to 7000A. Example 5 A screen printing polishing pad similar to that described in Example 2 is attached to different The underpad (Suba IVtm & DPM1000tm from Rodel) was evaluated for copper polishing with a Westech 372U polishing machine. The conditions of the active liquid reverse polishing process are the same as those of Example 4. It is found here that the compressibility of the underlying pad will affect the copper removal rate to a considerable extent. The more easily the pad is compressed, the higher the copper removal rate. Removal rates of 3,000 to 5000A, 8000 to 9000A, and 12,000 to 14,000A each without using a suba IVTM and DPM1000tm. This removal rate was achieved by inadequate post-processing in the wafer chamber. -18- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

/38 A8 B8 C8 申請專利範圍 •一種製造用於生產半導體元件或其先質之拋光墊之方 法’包括施加具有聚合物凸起圖案親水性聚合拋光層於 撓性基材之印刷方式。 2·如申請專利範圍第1項之方法，其中該親水聚合性拋光 層爲聚合原料，包含： i · 金度大於0.5 g/cm3 ; ii. 臨界表面張力大於或等於每公尺34 milliNewton ; iii·張力係數爲 0.02 到 5 GigaPascals ; i v. 30 C張力係數對60 °C張力係數比例在1 · 〇到 2.5; V. 硬度在 25 到 80 Shore D ; vi · 破裂應々爲300-6000 psi ; vii· 張力強度在loof^jbwoopsi;及 viii·破裂延長率小於或等於5〇0%。 3·如申請專利範圍第2項之方法，其中該親水聚合性拋光 層爲聚合原料，含有至少一部份包含以下之群組：i胺 基甲酸乙酯；2 ·碳酸酯；3 ·醯胺；4 ·酯；5 ·醚；6 .丙烯 酸酯；7 ·甲基丙晞酸酯；8丙烯酸；9曱基丙晞酸； 10.楓，11.丙缔醯胺；12.卣化物；13.酿亞胺；14·複 基；15.羰基；16.胺基；17·醛基；及18·羥基。 4·如申請專利範圍第3項之方法，其中所用印刷法爲凹版 印刷。 5.如申請專利範圍第3項之方法，其中所用印刷法爲網版 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 49175》 A B c D 六、申請專利範圍 印刷。 6·如申請專利範圍第j項之方法，其中該親水拋光層尚包 含眾多之軟區及眾多之硬區，該硬區及軟區平均尺寸小 於1 00微米。 7· —種應用在化學機械拋光之拋光墊，其包含：一拋光 層，其含有主要選自凹版印刷及網版印刷群組中印刷方 法所施加之親水拋光層，該拋光層具有： i. 密度大於0.5 g/cm3 ; ii. 臨界表面張力大於或等於每公尺34 milliNewton 0 iii·張力係數爲 0.02 到 5 GigaPascals ; i v · 3 0 °C張力係數對6 (ΓC張力係數比例在1.0到 2.5; v. 硬度在 2 5 到 80 Shore D ; vi. 破裂應力爲300-6000 psi ; vii. 張力強度在1000到15,000 psi ;及 viii. 破裂延長率小於或等於500%。 8·如申請專利範圍第7項之拋光墊，其中該親水聚合性拋 光層爲聚合原料，含有至少一部份包含以下之群組·· 1· 胺基曱酸乙酯；2.碳酸酯；3.醯胺；4.酯；5.醚；6·丙 晞酸酯；7 ·甲基丙烯酸酯；8 .丙晞酸；9 .甲基丙烯酸； 1 0 ·楓；1 1 ·丙烯醯胺；1 2 .鹵化物；1 3 ·醯亞胺；1 4 .羧 基；15·羰基；16.胺基；17.醛基；及18.羥基。 9· 一種抛光半導體元件基材之方法，其包含··提供申請專 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 8 8 8 8 A B c D 491758 六、申請專利範圍 利範圍第7項之拋光墊，並置入粒子漿液於半導體元件 及墊之間，並以化學機械抛光該半導體元件表面。 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)/ 38 A8 B8 C8 Patent Application Scope • A method of manufacturing a polishing pad for the production of semiconductor elements or precursors thereof 'includes a printing method of applying a hydrophilic polymeric polishing layer with a polymer raised pattern to a flexible substrate. 2. The method according to item 1 of the scope of patent application, wherein the hydrophilic polymerizable polishing layer is a polymer raw material, including: i. Gold degree is greater than 0.5 g / cm3; ii. Critical surface tension is greater than or equal to 34 milliNewton per meter; iii Tension coefficient of 0.02 to 5 GigaPascals; i v. 30 C tension coefficient to 60 ° C Tensile coefficient ratio between 1.0 and 2.5; V. Hardness of 25 to 80 Shore D; vi. Rupture should be 300-6000 psi vii · tensile strength at loof ^ jbwoopsi; and viii · breaking elongation rate is less than or equal to 50000. 3. The method according to item 2 of the patent application range, wherein the hydrophilic polymerizable polishing layer is a polymer raw material and contains at least a part of the group consisting of: i-urethane; 2; carbonate; 3; ammonium 4 esters 5 ethers 6 acrylates 7 methylpropionate 8 acrylic acid 9 propylpropanoic acid 10. maple, 11. allylamine; 12. halide; 13 14. Imine; 14. Compound; 15. Carbonyl; 16. Amine; 17. Aldehyde; and 18. Hydroxyl. 4. The method of claim 3, wherein the printing method used is gravure printing. 5. If the method of applying for the third item of the patent scope, the printing method used is screen version-19- This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 49175 "AB c D VI. Patent application Range printing. 6. The method according to item j of the patent application range, wherein the hydrophilic polishing layer still includes a plurality of soft regions and a plurality of hard regions, and the average size of the hard and soft regions is less than 100 microns. 7 · A polishing pad used in chemical mechanical polishing, comprising: a polishing layer containing a hydrophilic polishing layer applied by a printing method mainly selected from the gravure printing and screen printing groups, the polishing layer having: i. Density greater than 0.5 g / cm3; ii. Critical surface tension is greater than or equal to 34 milliNewton 0 per meter iii. Tension coefficient is 0.02 to 5 GigaPascals; iv · 30 ° C tension coefficient to 6 (ΓC tension coefficient ratio is 1.0 to 2.5 v. Hardness is 25 to 80 Shore D; vi. Rupture stress is 300-6000 psi; vii. Tensile strength is 1000 to 15,000 psi; and viii. Rupture elongation rate is less than or equal to 500%. The polishing pad of item 7, wherein the hydrophilic polymerizable polishing layer is a polymerization raw material, and contains at least a part of the group consisting of: 1. amino ethyl amino acid ester; 2. carbonate; 3. ammonium amine; 4 Ester; 5. Ether; 6. Propionate; 7. Methacrylate; 8. Propionic acid; 9. Methacrylic acid; 10; Maple; 1 1; Acrylamidonium; 12; Halide 1 3 · fluorene imine; 1 4. Carboxyl group; 15 · carbonyl group; 16. amino group; 17. aldehyde group; and 18. hydroxyl group. 9 · A method for polishing semiconductor element substrates, including: · providing application-specific -20- This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 8 8 8 8 AB c D 491758 VI. The patent application scope is the polishing pad of item 7 and the particle slurry is placed between the semiconductor element and the pad, and the surface of the semiconductor element is chemically and mechanically polished. -21-This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm)