TW490727B - Clustered tool apparatus - Google Patents

Abstract

This invention provides a clustered tool apparatus comprises a water-removal processing member chamber for heating an object to be processed by using a heater to remove water and the like adhering to the surface of the object, an oxide- film removal processing chamber for removing, by etching, a natural oxide film formed on the surface of the object W from which the water has been removed, film-formation processing chambers for performing film-formation processing on the surface of the object, a cooling processing chamber for cooling the object from the film-formation processing, and a common transfer chamber, commonly connected/disconnected to/from the water-removal processing chamber, the oxide-film removal processing chamber, the film-formation processing chambers and the cooling processing chamber 20, to loading/unloading the object.

Description

490727 Α7 Β7 五、發明説明（） 1 發明背景 本發明係關於關於例如對於半導體晶圓進行一連串不 同的處理而結合複數的處理室之 般，半導體元件因應最近 需求， 配線構 及下層 hole) 此之間 接 的材料 限制， 的濺鍍 )良好 t i on ) 電路的構成有走 造，下層元件與 鋁質配線與上層 等埋入技術，因 的電氣接續而越 觸孔或是貫通孔 例如鋁。又，於 爲了防止空孔（ (sputtering) 的化學氣相沈積 膜較佳。此類金 向多層配 上層鋁質 鋁質配線 爲關係到 來越重要 的埋入最 此場合， vo i d )的 膜，以階 (CVD， 屬薄膜的 叢集型處理裝置。 高密度化、高集積度化的 線構造的趨勢。於此多層 配線之接續部之接觸孔以 的接續部之貫通孔（vi a- 配線與元件間或是配線彼 〇 好使用廉價且導電性良好 洞的充填由於有技術上的 發生，不用方向選擇性高 段覆蓋(step coverage Chemical Vapor Deposi-生成裝置開示於例如日本 請 先 閲 讀 背 τέ 之 注 意 事 項 再 填/ 頁 訂 特開平6 — 2 6 79 5 1號或是特開平6 - 28 3 446 號等公報。 經濟部中央標準局員工消費合作社印製 半導體晶圓上藉由CVD法形成鋁膜時，一般使用有 機金屬氣體DMAH(雙甲基鋁氫化物）作爲處理氣體。 此DMAH於常溫也具有8000〜10000cp的高 黏度且與空氣中的水分或是氧氣起激烈反應而起火，屬於 非常難處理的物質。也就是說，現在藉由CVD生產鋁膜 的半導體晶圓的量產性良好的成膜技術並未被成功開發^ 又，鋁膜與其他的金屬膜不同，非常容易與空氣中的 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） 一 4 一 490727 A7 ____B7_ 五、發明説明（） 2 水分與氧氣相結合而形成氧化膜造成特性劣化。也就是說 ，在成膜處理的前後對於半導體晶圓的管理必須要付出更 細心的注意。亦即，成膜之前，需要有效率地除去晶圓表 面附著的水分或是氧化膜，又於成膜之後，爲了抑制i然 氧化膜的附著必須要有效率的讓晶圓溫度降至操作溫度。 在半導體元件自身越來越高密度、高微細化的現在，特別 是鋁膜形成後即使是只有些微的氧化膜附著也會導致半導 體電氣特性的劣化。 經濟部中央標準局員工消費合作社印製 鋁膜成膜處理之前藉由蝕刻（etching)除去半導體 晶圓表面的自然氧化膜的場合，會有個問題發生。亦即， 例如爲了充填空穴而在半導體晶圓生成選擇性鋁膜的場合 (貫通孔內選擇性形成鋁塞alumi-plug的場合），蝕刻氣 體可以使用如BC 13氣體，而BC 13氣體成分之中特 別是C 1離子會對晶圓表面腐蝕而劣化晶圓的電氣特性。 也就是說，在鋁膜成膜處理前，必須將此氣體成分確實從 晶圓表面除去。但是，B C 1 3氣體等氣體成分與晶圓表 面的結合能量相當高，單純抽真空至蝕刻裝置內的高真空 度’也不能完全除去結合於晶圓表面的氣體成分。又，於 半導體晶圓形成地毯式鋁膜時，蝕刻氣體使用例如氫氣氣 體的緣故所以不會發生上述問題。 發明概要 本發明之第1目的，在提供不損於半導體晶圓等處理 對象的電氣特性及品質，而可以對處理對象物進行C V D ^紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） "" -5 - 490727 A7 B7 五、發明説明（3 ) 成膜處理的叢集型處理裝置。又，本發明之第2目的，在 提供幾乎能夠完全除去半導體晶圓等處理對象物的表面所 附著的氣體成份的叢集型處理裝置。 本發明之目的藉由以下之叢集型處理裝置來達成。亦 即，此叢集型處理裝置具有：將對象物搬進搬出的搬送室 ;及 與搬送室連接而可以連通、具有將對象物加熱的加熱 手段，由加熱手段將對象物加熱而除去對象物表面附著的 水分的水分除去處理室；及 ............——* ** 與搬送室連接而可以連通、藉由蝕刻氣體而將對象物 表面所附著的自然氧化膜除去之氧化膜除去處理室及 與搬送室連接而可以連通、對於對象物的表面施以成 膜處理的成膜處理室；及 與搬送室連接而可以連通、把成膜處理之後的對象物 加以冷卻的冷卻處理室；及 與搬送室連接而可以連通、可以除去在氧化膜除去處 理室所使用的蝕刻氣體成份的氣體成份除去處理室。 經濟部中央標準局員工消費合作社印製 圖面之簡單說明 第1圖係本發明一實施例所相關的叢集型處理裝置的 概略平面圖。 第2圖係第1圖之構成叢集型處理裝置的水分除去處 理室的斷面圖。 第3圖係第2圖之水分除去處理室所設置之單元裝著 本紙張尺度適用中國國家標準（CNS ) A4規格（210/297公釐^ ~ 一 6 - ^0727 A7 —s^_?z_ 五、發明説明（4 ) 板的平面圖。 第4圖係第1圖之水分除去處理室之加熱器單元的裝 卸狀態的斷面圖。 第5圖係第1圖之構成叢集型處理裝置的氧化膜除去 處理室的斷面圖。 第6圖係第1圖之構成叢集型處理裝置的氣體成份除 去處理室的斷面圖。 第7圖係第1圖之構成叢集型處理裝置的成膜處理室 的斷面圖。 第8圖係第1圖之構成叢集型處理裝置的冷卻處理室 的斷面圖。 第9圖係顯示真空室之基礎壓力與貫通孔的電阻值的 關係示意圖。 第10圖係具有氣密箱的叢集型處理裝置的平面圖。 第11圖係於氧化膜除去處理裝置設有氣密箱的狀態 的概略圖。 第12圖係本發明之第1變形例之叢集型處理裝置的 平面圖。 第13圖係本發明之第2變形例之叢集型處理裝置的 平面圖。 第14圖係氣體成份處理室的變形例的斷面圖。 第15圖係第14圖的氣體成份處理室的紫外線照射 手段之側面圖。 第16圖係第14圖的氣體成份處理室的紫外線照射 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 請 先 閱 讀 背 面 之 注 意 事 項 再490727 Α7 Β7 V. Description of the invention (1) Background of the invention The present invention relates to, for example, a series of different processes for a semiconductor wafer and a combination of a plurality of processing chambers. Semiconductor elements respond to recent needs, such as wiring structures and lower holes.) Indirect material limitation, sputter plating) Good ti on) Circuit construction includes fabrication, embedded components such as lower-layer components, aluminum wiring, and upper layers, and more contact holes or through-holes such as aluminum due to electrical connection. In addition, in order to prevent sputtering, a chemical vapor deposition film is preferred. This type of gold with multiple layers of aluminum and aluminum wiring is the most important buried film, vo id), Step (CVD) is a thin film cluster processing device. Trends in line structure with higher density and higher density. Through holes in the contact portion of the contact portion of the multilayer wiring (vi a- Wiring and It is better to use inexpensive and conductive hole filling between components or wiring. Due to the technical occurrence, there is no need for directional selective high-level coverage (step coverage Chemical Vapor Deposi-generating device is shown in, for example, Japan. Note for re-filling / Page order JP 6-2 6 79 5 1 or JP 6-28 3 446, etc. The Ministry of Economic Affairs, Central Bureau of Standards, Consumer Cooperatives, printed aluminum semiconductor wafers by CVD method to form aluminum In the case of membranes, organic metal gas DMAH (bismethylaluminum hydride) is generally used as a processing gas. This DMAH also has a high viscosity of 8000 to 10000 cp at room temperature and is compatible with moisture in the air. Oxygen reacts violently and ignites, and is a very difficult substance to deal with. That is to say, the film-forming technology for mass production of semiconductor wafers that currently produce aluminum films by CVD has not been successfully developed. Also, aluminum films and Different from other metal films, it is very easy to apply the Chinese National Standard (CNS) A4 specification (210X 297 mm) to the paper size in the air. One 4 One 490727 A7 ____B7_ 5. Description of the invention () 2 The combination of moisture and oxygen Oxidation film causes deterioration of characteristics. That is to say, more careful attention must be paid to the management of semiconductor wafers before and after the film formation process. That is, before film formation, it is necessary to efficiently remove the moisture attached to the wafer surface or After the film is formed, in order to suppress the adhesion of the oxide film, it is necessary to efficiently reduce the wafer temperature to the operating temperature. Now that the semiconductor elements themselves are becoming increasingly denser and finer, aluminum is particularly important. After the film is formed, even slight adhesion of the oxide film can cause the deterioration of the electrical characteristics of the semiconductor. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A problem occurs when the natural oxide film on the surface of the semiconductor wafer is removed by etching before the aluminum film formation process, that is, when a selective aluminum film is formed on the semiconductor wafer to fill holes, for example. (When the aluminum plug alumi-plug is selectively formed in the through hole), BC 13 gas can be used as the etching gas. Among the BC 13 gas components, especially C 1 ions, will corrode the wafer surface and deteriorate the electrical characteristics of the wafer. In other words, before the aluminum film formation process, this gas component must be removed from the wafer surface. However, the binding energy of gas components such as B C 1 3 gas and the wafer surface is quite high, and simply evacuating to a high degree of vacuum in the etching apparatus' cannot completely remove the gas components bound to the wafer surface. When a carpet-type aluminum film is formed on a semiconductor wafer, the above-mentioned problem does not occur because an etching gas such as a hydrogen gas is used. SUMMARY OF THE INVENTION A first object of the present invention is to provide CVD of a processing object without damaging the electrical characteristics and quality of the processing object such as a semiconductor wafer. ^ Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ) &Quot; " -5-490727 A7 B7 V. Description of the invention (3) Cluster type processing device for film forming process. A second object of the present invention is to provide a cluster processing apparatus capable of almost completely removing a gas component attached to a surface of a processing object such as a semiconductor wafer. The object of the present invention is achieved by the following cluster processing apparatus. That is, this cluster type processing device includes a transfer room that carries an object in and out, and a heating means that is connected to the transfer room and can communicate with each other, and has heating means for heating the object. The heating means heats the object to remove the surface of the object. Moisture removal processing chamber for attached moisture; and ............—— * ** A natural oxide film that is connected to the transfer chamber and can communicate with the surface of the object by etching gas The removed oxide film removal processing chamber and the film-forming processing chamber which can be connected to the transfer chamber and can be subjected to film-forming treatment on the surface of the object; and the film-processing treatment chamber which is connected to the transfer chamber and can be connected to the film-processed object. A cooled cooling processing chamber; and a gas component removal processing chamber which is connected to the transfer chamber and can communicate with and remove an etching gas component used in the oxide film removal processing chamber. Brief Description of the Drawings Printed by the Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Figure 1 is a schematic plan view of a cluster processing device according to an embodiment of the present invention. Fig. 2 is a sectional view of the moisture removal processing chamber constituting the cluster type processing apparatus of Fig. 1; Figure 3 is the unit set in the moisture removal processing chamber in Figure 2. This paper is equipped with the paper size applicable to the Chinese National Standard (CNS) A4 specification (210/297 mm ^ ~ 6-^ 0727 A7 —s ^ _? Z_ 5. Description of the invention (4) A plan view of the plate. Fig. 4 is a sectional view of the mounting and dismounting state of the heater unit of the moisture removal processing chamber of Fig. 1. Fig. 5 is the oxidation of the cluster-type processing device of Fig. 1. Cross-sectional view of the film removal processing chamber. Fig. 6 is a cross-sectional view of the gas component removal processing chamber constituting the cluster processing apparatus of Fig. 1. Fig. 7 is the film formation processing of the cluster processing apparatus of Fig. 1. Sectional view of the chamber. Figure 8 is a sectional view of the cooling processing chamber constituting the cluster processing device of Figure 1. Figure 9 is a schematic diagram showing the relationship between the base pressure of the vacuum chamber and the resistance value of the through hole. FIG. 11 is a plan view of a cluster type processing apparatus having an airtight box. FIG. 11 is a schematic view showing a state where an airtight box is provided in an oxide film removal processing apparatus. FIG. Plan view of the device. Fig. 13 is a second modification of the present invention. A plan view of the cluster type processing device. Fig. 14 is a cross-sectional view of a modified example of the gas component processing chamber. Fig. 15 is a side view of the ultraviolet irradiation means of the gas component processing chamber in Fig. 14. Fig. 16 is 14 The ultraviolet radiation of the gas composition processing room in the figure is applicable to the Chinese National Standard (CNS) A4 size (210X297 mm). Please read the precautions on the back first.

頁 經濟部中央標準局員工消費合作社印製 -7 - 490727 A7 _____B7_ 五、發明説明（5 ) 手段之平面圖。 第1 7圖（A)係紫外線照射手段之紫外線強度分布 圖；（B)係設有濾光手段後之紫外線強度分布示意圖。 本發明較佳之實施形態 以下參照圖面資料說明本發明之實施例。 第1圖係本發明一實施例所相關的叢集型處理裝置的 概略平面圖。如圖所示，叢集型處理裝置2具有設置於中 心的共通搬送室4。此共通搬送室4以例如鋁爲材質，爲 八角形容器狀。共通搬送室4的周邊分別配置有：第1及 第2卡匣室6、8，及將晶圓W的表面的水分除去之水分 除去處理室1 0，及將晶圓W的表面的氣體成份除去之氣 體成份除去處理室1 2，及將晶圓W的表面的自然氧化膜 给去之氧化膜除去處理室1 4，及對晶圓W的表面進行指 定的成膜處理的第1及第2成膜處理室1 6、1 8，及冷 卻晶圓W的冷卻處理室20。各室6、8、10、12、 經濟部中央標準局員工消費合作社印製 1 4、1 6、1 8、2 0分別介由可以開閉的門閥（gate valve) G 1〜G 8而與共通搬運室相連通。 於水分除去處理室1 0，作爲成膜處理的前處理，半 導體晶圓W被加熱而將附著於晶圓W表面的水分除掉。於 氧化膜處理室1 4，作爲成膜處理的前處理，水分已被除 去之晶圓W的表面的自然氧化膜藉由蝕刻而被除去。此處 ，隨第1及第2成膜處理室1 6、1 8將對晶圓W形成之 鋁膜的種類不同而分別使用例如H2氣體（地毯式的場合 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 8 - 五、發明説明（6 ) )或者是BC1 3.氣體（選擇性的場合）。於氣體成份除 去處理室1 2，在使用有害的蝕刻氣體於氧化膜除去處理 室1 4的場合，晶圓W表面所殘留的氣體成份藉由加熱或 是紫外線照射而完全分離除去。於成膜處理室1 6、1 8 ，晶圓W的表面形成指定的鋁膜。於冷卻處理室2 〇，作 爲一道後處理手續，成膜後的晶圓W被冷卻到操作溫度。 第1及第2卡匣室6、8分別設有可以開閉的門 GDI 、GD2。通過這些門GDI 、GD2可以對第1 及第2卡匣室6、8搬進搬出例如可以收容2 5片晶圓的 卡匣C。各卡匣室6、8內設有（圖中並未表示）可以升 降的卡匣台卡。卡匣室6、8內設有供給N2氣體等非活 性氣體的氣體供給手段，及將真空室內抽真空的抽真空手 段，真空室內可以被抽到例如5 X 1 0 - 6Tor r程度以下的 真空度。 經濟部中央標準局員工消費合作杜印製 於共通搬送室4內，配置有：由可以在保持晶圓W的 狀態下可以彎曲及旋轉的多關節臂機構所構成的搬送臂 2 4，及決定被取入共通搬送室4內的晶圓W的位置的旋 轉位置決定機構2 2。亦即，晶圓W藉由搬送臂2 4的屈 伸及旋轉動作而於各室4、6、8、1 0、1 2、1 4、 1 6、1 8、20之間搬進搬出。於共通搬運室4接續有 :爲使真空室內被抽到高真空度的真空而於途中介設渦.輪 分子幫浦2 1及乾幫浦2 3之真空排氣系2 5，及對共通 搬運室4供給N2氣體等非活性氣體的氣體供給系1 9。 第2圖顯示水分除去處理室1 0。如圖所示，水分除 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 29*7公釐） 一 9 - 490727 A7 _____ B7_ 五、發明説明（7 ) 去處理裝置10具有例如由鋁材質所成形之有底筒狀之處 理容器2 6。處理容器2 6的開口頂部以螺絲3 0裝設有 可以裝卸的可以保持處理容器2 6內爲氣密的頂板2 8。 於此場合，頂板2 8與處理容器2 6之間，介有密封用的 歐環（0-ring) 32。於處理容器2 6下部的內側壁設有段 部3 4。此段部3 4藉由螺絲4 2固定有可以裝卸的例如 不銹鋼製的單元裝著板3 8。如第3圖所示，單元裝著板 3 8的周緣部具有3個突出部3 6。各突出部3 6係向著 裝著板3 8的縱方向突出，而具有螺絲4 2可以插通的螺 絲孔3 5。裝著板3 8的約略中央部形成有***提拴4 6 的三個拴孔4 3。 單元裝著板3 8上設置有石墨製的載置台4 0。載置 台40的表面蒸鍍一層例如S i C膜。載置台40的上側 面作爲載置晶圓W的載置面。爲使載置於載置台4 0之晶 圓W被加熱至指定的溫度例如4 0 0 °C程度，於載置台 經濟部中央標準局員工消費合作社印製 4 0埋入例如全面均覆蓋以S i C蒸鍍膜的碳製加熱器 44。對於水分除去處理室1 0，晶圓W在介由門閥G 3 而搬進搬出時，爲使晶圓W能夠被支撐於載置台4 0的上 方，支撐晶圓W且可以升降的提拴4 6上下方向延伸且貫 通單元裝著板3 8與載置台4 0。 處理容器2 6的底部2 6 A，形成有安裝接頭單元 48的安裝孔47。安裝孔47爲由接頭單元48的下側 來支撐所以其內面爲段狀而開口。接頭單元4 8係在安裝 孔4 7的段狀面之間在介插著密封構件4 9的狀態下，藉 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） — -10 - 490727 A7 B7 經濟部中央標準局員工消費合作社印製 五、 發明説明 ( 8 ； 由 螺 絲 5 0 而 可 以 裝 拆 地 裝 設 於 安 裝 孔 4 7 而 氣 密 密 閉 了 安 裝 孔 4 7 〇 被 絕 緣 的 2 條 引 出 接 頭 5 2 由 接 頭 單 元 4 8 通 過 安 裝 孔 4 7 而 延 伸 到 處 理 容 器 2 6 的 外 部 〇 位 於 處 理 容 器 2 6 內 的 接 頭 5 2 > 5 2 的 上 端 介 由 配 線 5 6 而 設 於 單 元 裝 著 板 3 8 的 下 部 而 且 接 續 著 與 加 熱 器 4 4 在 電 氣 上 相 接 續 著 的 電 熱 接 頭 5 4 〇 爲 使 其 應 需 求 而 通 電 加 熱 加 熱 器 4 4 處 理 容 器 2 6 的 外 側 的 接 頭 5 2 的 下 端 而 接 續 著 電 熱 器 電 源 6 0 〇 各 配 線 5 8 藉 由 螺 絲 6 2 而 可 以 裝 拆 地 接 續 於 接 頭 5 2 的 下 端 〇 爲 使 接 頭 單 元 4 8 與 單 元 裝 著 板 3 8 連 結 爲 一 體 由 接 頭 單 元 4 8 延 伸 出 來 的 連 結 棒 6 5 藉 由 螺 絲 6 8 而 連 結 〇 也 就 是 說 > 如 第 4 圖 所 示 ， 藉 由 取 下 螺 絲 4 2 與 螺 絲 5 0 > 載 置 台 4 0 與 單 元 裝 著 板 3 8 與 接 頭 單 元 4 8 也 以 成 一 體 地 白 處 理 容 器 2 6 取 下 〇 於 載 置 台 4 0 所 裝 設 的 處 理 容 器 2 6 的 段 部 1 設 有 冷 卻 套 7 0 〇 冷 卻 套 7 0 內 流 以 例 如 冷 卻 水 而 將 處 理 容 器 2 6 冷 卻 〇 處 理 容 器 2 6 的 一 邊 的 側 面 設 有 將 N 2 氣 體 等 非 活 性 氣 體 導 入 處 理 容 器 2 6 內 的 氣 體 導 入 噴 嘴 7 2 以 及 排 氣 P 7 3 〇 爲 使 處 理 容 器 內 能 夠 抽 到 例 如 5 X 1 0 -6 To r r 以 下 的 高 真 空 度 y 於 排 氣 □ 7 3 接 續 著 中 間 開 閉 閥 8 0 及 渦 輪 分 子 幫 浦 7 4 乾 幫 浦 7 6 而 接 續 於 排 氣 管 路 7 8 〇 處 理 容 器 2 6 的 另 一 方 側 壁 設 有 晶 圓 的 出 入 P 8 2 〇 於 晶 圓 的 出 入 □ 8 2 > 設 有 連 通 、 遮 斷 水 分 除 去 處 理 室 1 0 與 共 通 搬 運 處 理 室 4 的 門 閥 G 3 〇 冬： 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 11 一 490727 A7 B7 五、發明説明（9) 第5圖係作爲R I E (反應性離子蝕刻）電漿裝置用 而構成之氧化膜除去處理室1 4。如圖所示，氧化膜除去 處理室14具有由例如鋁質製造之成形爲有底筒狀之處理 容器8 4。於處理容器8 4內設有構成下部電極之載置台 8 8。載置台8 8係由銘等導電材料所形成，在處理容器 8 4的底部8 4A由絕緣材料8 6支撐。載置台8 8介由 於途中串連設置開關9 8與整合箱1 〇 〇之供電線1 0 2 而接續可以發生例如1 3 · 5 6MH z的電漿的高周波電 源 1 0 4 〇 載置台8 8上側面載置有於其內部埋進聚亞胺製之靜 電卡盤（chunk) 9 0。應需要靜電卡盤9 0的卡盤面爲 了要使其能夠藉由庫倫力保持吸著晶圓W，而於靜電卡盤 經濟部中央標準局員工消費合作社印製 9 0介由配線9 2與開關9 4而接續至高壓直流電源9 6 。爲了確保晶圓W的內面進行的電漿處理的均一性，於靜 電卡盤9 0的上側面周邊部位設有保持晶圓W的外周而決 定晶圓W的位置的聚焦環（focus ring) 1 0 6。將晶圓 W介由門閥G 5搬進搬出氧化膜除去處理室1 4時，爲使 晶圓W能夠被支撐在載置台8 8的上方，支撐晶圓W且可 以升降的提拴1 0 8上下方向延伸且貫通載置台8 8與靜 電卡盤9 0。於載置台8 8的下側面設有升降提拴1 0 8 而可以伸縮的伸縮管（bellows) 1 1 〇 9爲了在保持處 理容器8 4內的氣密性而能夠升降提拴1 〇 8，伸縮管 1 1 0保持其內部的氣密而提拴1 0 8將伸縮管1 1 0貫 通氣密。又，伸縮管1 1 0通過設於處理容器8 4的底部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ -12 - 490727 A7 ______B7_____ 五、發明説明（1〇) 84A所設的孔1 1 2而延伸到處理容器84的外部。 處理容器8 4開口的頂部介由密封構件1 1 4而裝設 有保持氣密的頂板1 1 6。頂板1 1 6上，設有構成上部 電極的蓮蓬頭（shower head) 1 2 0。蓮蓬頭（shower head) 1 2 0的內部設有擴散板1 1 8。擴散板1 1 8的 下側設有具備多數噴出孔1 1 2的氣體噴射板1 2 4。蓮 蓬頭（shower head) 1 2 0的側閉上設有冷卻夾套 1 2 6。冷卻夾套1 2 6內藉由例如冷卻水的流動而冷卻 蓮蓬頭（shower head) 1 2 0。 經濟部中央標準局員工消費合作社印製 頂板1 1 6上設有由蓮蓬頭（shower head) 1 2 0 的上側將氣體導入處理容器8 4內的氣體導入口 1 2 8。 氣體導入口 1 2 8接續著作爲蝕刻氣體、用來自H2氣體源 1 38、供給Η 2氣體的Η 2氣體供給管1 30，及作爲蝕 刻氣體、用來自BC 13氣體源140、供給BC 13氣體 的B C 1 3氣體供給管1 3 2。各供給管1 3 0、1 3 2 的途中分別設有質量流量控制器1 3 4與開閉閥1 3 6。 於成膜處理室1 6、18在晶圓W生成地毯式鋁膜的場合 ，通過Η2氣體供給管1 3 0WH2氣體導入處理容器8 4 內，於成膜處理室1 6、1 8在晶圓W生成選擇式銘膜的 場合，通過BC 13氣體供給管1 32將BC 13氣體導入 處理容器8 4內。又如圖所示，作爲混合氣體可以從例如 A r氣體源1 5 4供給A r氣體。又，雖未於圖中標示出 來，但亦可供給N 2氣體以作爲洗淨氣體。 處理容器8 4的底部8 4 A的周邊部設有排氣日 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐) ~ " -- 一 13 ~ 490727 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明（11) 1 4 2。爲使處理容器8 4內抽到例如5 X 1 〇-6Torr以 下的高真空度，於排氣口 1 4 2，如第2圖所示的水分除 去處理室1 0，接續著排氣管路1 5 0，其途中有渦輪分 子幫浦146與乾幫浦148。於處理容器84的側壁， 設有晶圓出入口 1 5 2。於晶圓出入口 1 5 2設有可以連 通、遮斷氧化膜除去處理室1 4與共通搬運室4的門閥 G 5 〇 第6圖顯τκ氣體成份除去處理室1 2。如圖所示，氣 體成份處理室1 2爲了要分離、除去附著於晶圓w表面的 B c 1 3等有害氣體，具有與水份除去處理室1 〇相同的 構成，另外還附加有紫外線照射手段1 5 6。也就是說， 以下省略與水份除去處理室1〇相同構成的部份的圖號說 明’僅針對紫外線照射手段加以說明。 於氣體成份除去處理室1 2的處理容器2 6的頂板 2 8，開設有大口徑的紫外線透過孔1 5 8。透過孔 1 5 8由可以透過紫外線的材料（例如石英）而形成之透 過板1 6 0而藉由密封構件1 6 6的設置而保持氣密。透 過板1 8 0的上側設有覆蓋住透過板1 8 0的燈箱1 6 2 。燈箱1 6 2係藉由施壓構件1 6 8而由螺絲1 6 4而固 定裝設於等板2 8的上側面。燈箱1 6 2內，收容有以紫 外線UV照射載置於載置台4 0的晶圓w用的紫外線燈 1 7 0。載置於載置台4 0的晶圓W藉由設置於載置台 4 0的加熱器4 4加熱到指定的溫度（例如3 〇 °c程度） 同時以紫外線燈1 7 0所發出的紫外線UV激發、分離附 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公慶) -14 一 (請先閱讀背面之注意事項再填寫本頁) 訂 490727 A7 五、發明説明（l2) 著於其表面的C1離子等。此時應需要而由氣體導入噴嘴 7 2向處理容器2 6內供給N2氣體與H2氣體。 爲使處理容器2 6內抽到例如5 X 1 0 ^Τοιί·以下的 高真空度，於處理容器2 6的排氣口7 3，接續著排氣管 路7 8，其途中有開閉閥8 0與渦輪分子幫浦7 4與乾幫 浦76。於處理容器26的側壁，設有晶圓出入口 82。 於晶圓出入口 8 2設有可以連通、遮斷氣體成份除去處理 室1 2與共通搬運室4的門閥G 4。 第7圖顯示第1成膜處理室1 6。又因爲第2成膜處 理室1 8與第7圖所示的第1成膜處理室完全相同，而省 略其說明。 / 如圖所示，作爲熱CVD成膜裝置所構成之成膜處理 室1 6具有例如以鋁成形爲圓筒狀的處理容器1 7 2。於 處理容器1 7 2的底部1 7 2A的中心部，形成有可以通 過***供電用插線194、20 0的插通孔174。處理 容器1 7 2的底部1 7 2A的周邊部設有排氣口 1 8 0。 爲使處理容器1 72內抽到例如5 X 1 0 -6To 1*1*以下的高 請 先 閱 讀 背 面 之 注 意 項 再Page Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -7-490727 A7 _____B7_ V. Floor Plan of Means of Invention (5). Fig. 17 (A) is an ultraviolet intensity distribution chart of an ultraviolet irradiation means; (B) is a schematic diagram of an ultraviolet intensity distribution after a filtering means is provided. Preferred embodiments of the present invention The following describes embodiments of the present invention with reference to the drawings. Fig. 1 is a schematic plan view of a cluster processing apparatus according to an embodiment of the present invention. As shown in the figure, the cluster-type processing apparatus 2 includes a common transfer chamber 4 provided in the center. The common transfer chamber 4 is made of, for example, aluminum and has an octagonal container shape. The first and second cassette chambers 6 and 8, the moisture removal processing chamber 10 that removes the moisture on the surface of the wafer W, and the gas components on the surface of the wafer W are arranged around the common transfer chamber 4. The removed gas component removal processing chambers 12 and the oxide film removal processing chambers 14 which give the natural oxide film on the surface of the wafer W, and the first and the first film formation processing on the surface of the wafer W 2 film forming processing chambers 16 and 18, and a cooling processing chamber 20 for cooling the wafer W. Each room 6,8,10,12, printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 1, 4, 16, 18, and 20 are shared by gate valves G 1 to G 8, which can be opened and closed, respectively. The transfer rooms are connected. In the moisture removal processing chamber 10, the semiconductor wafer W is heated as a pre-treatment of the film forming process to remove moisture attached to the surface of the wafer W. In the oxide film processing chamber 14, as a pre-treatment of the film formation process, the natural oxide film on the surface of the wafer W from which moisture has been removed is removed by etching. Here, as the first and second film-forming processing chambers 16 and 18 will use different types of aluminum films formed on the wafer W, for example, H2 gas (for carpet type, this paper standard applies Chinese national standards (CNS ) A4 specification (210X297 mm) 8-5. Description of the invention (6)) or BC1 3. Gas (optional occasion). In the case where the gas component removal processing chamber 12 is used, and when a harmful etching gas is used in the oxide film removal processing chamber 12, the gas components remaining on the surface of the wafer W are completely separated and removed by heating or ultraviolet irradiation. A predetermined aluminum film is formed on the surface of the wafer W in the film formation processing chambers 16 and 18. In the cooling processing chamber 20, as a post-processing procedure, the formed wafer W is cooled to the operating temperature. The first and second cassette chambers 6 and 8 are provided with doors GDI and GD2 which can be opened and closed, respectively. Through these doors GDI and GD2, the first and second cassette chambers 6, 8 can be carried in and out, for example, a cassette C that can accommodate 25 wafers. Each cassette compartment 6, 8 has a cassette table card (not shown) that can be raised and lowered. The cassette chambers 6 and 8 are provided with a gas supply means for supplying inert gas such as N2 gas, and a vacuum means for evacuating the vacuum chamber. The vacuum chamber can be evacuated to a level of, for example, 5 X 1 0-6 Torr degree. The consumer cooperation agreement of the Central Standards Bureau of the Ministry of Economic Affairs is printed in the common transfer room 4 and is equipped with a transfer arm 2 4 composed of a multi-joint arm mechanism that can be bent and rotated while holding the wafer W, and a decision The rotation position determination mechanism 22 for the position of the wafer W taken into the common transfer chamber 4. That is, the wafer W is moved in and out between each of the chambers 4, 6, 8, 10, 12, 2, 4, 16, 18, and 20 by the extension and rotation of the transfer arm 24. Continuing in the common transfer chamber 4 are: a vortex is installed on the way in order to make the vacuum chamber to be evacuated to a high degree of vacuum. Wheel molecular pump 2 1 and dry pump 2 3 vacuum exhaust system 2 5 and common pump The transfer chamber 4 supplies a gas supply system 19 for inert gas such as N2 gas. FIG. 2 shows the moisture removal processing chamber 10. As shown in the figure, the paper size is subject to Chinese National Standard (CNS) A4 (210 X 29 * 7 mm). 9-490727 A7 _____ B7_ V. Description of the invention (7) The processing device 10 has, for example, aluminum The bottomed cylindrical processing container 2 6 formed by the material. The top of the opening of the processing container 26 is provided with screws 30. The top plate 28, which can be attached and detached, can keep the inside of the processing container 26 airtight. In this case, a sealing O-ring 32 is interposed between the top plate 28 and the processing container 26. A section 34 is provided on the inner side wall of the lower part of the processing container 26. A unit mounting plate 3 8 made of, for example, stainless steel, which can be attached and detached, is fixed to this section 3 4 by screws 4 2. As shown in Fig. 3, the peripheral portion of the unit mounting plate 38 has three protruding portions 36. Each of the protruding portions 36 protrudes in a longitudinal direction toward the mounting plate 38, and has a screw hole 35 through which a screw 42 can be inserted. Approximately the central portion of the mounting plate 38 is formed with three bolt holes 43 for inserting the lifting bolts 4 6. A graphite mounting table 40 is provided on the unit mounting plate 38. A surface of the mounting table 40 is vapor-deposited with, for example, a Si film. The upper side surface of the mounting table 40 serves as a mounting surface on which the wafer W is mounted. In order for the wafer W placed on the mounting table 40 to be heated to a specified temperature, for example, about 400 ° C, it is printed on the mounting table of the Consumers' Cooperative of the Central Standard Bureau of the Ministry of Economic Affairs, and is embedded in S. i C vapor-deposited carbon heater 44. In the moisture removal processing chamber 10, when the wafer W is carried in and out through the gate valve G3, the wafer W can be supported above the mounting table 40, and the lifting rod 4 can support the wafer W and can be raised and lowered. 6 The up-down direction extends through the unit mounting plate 38 and the mounting table 40. The bottom 2 6 A of the processing container 26 is formed with a mounting hole 47 for mounting the joint unit 48. Since the mounting hole 47 is supported by the lower side of the joint unit 48, its inner surface is segment-shaped and opens. The joint unit 48 is connected between the segmented surfaces of the mounting holes 4 7 with the sealing member 49 interposed therebetween. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) — -10- 490727 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (8; Mounting holes 4 7 can be installed and disassembled by screws 5 0 and the mounting holes 4 7 are airtightly sealed 2 The strip lead-out joint 5 2 extends from the joint unit 4 8 to the outside of the processing vessel 2 6 through the mounting hole 4 7. The upper end of the joint 5 2 inside the process vessel 2 6 is provided in the unit through the wiring 5 6. The lower part of the plate 3 8 is installed and is connected to the heater 4 4 which is electrically connected to the heater 4 4. The heater 5 4 is electrically heated to make it on demand. The lower end is connected to the heater power supply 6 0 〇 each wiring 5 8 It can be detachably connected to the lower end of the joint 5 2 by screws 6 2. In order to connect the joint unit 4 8 and the unit mounting plate 3 8 as a whole, a connecting rod 6 extending from the joint unit 4 8 is connected by the screw 6 8 and connected 〇 That is, as shown in Fig. 4, by removing screws 4 2 and screws 5 0 > the mounting table 40 and the unit mounting plate 3 8 and the joint unit 4 8 are also integrated. The white processing container 2 6 is removed. The section 1 of the processing container 2 6 installed on the mounting table 40 is provided with a cooling jacket 70. The cooling jacket 70 is internally cooled with, for example, cooling water. The side of one side of the processing container 2 6 is provided with a gas introduction nozzle 7 2 for introducing an inert gas such as N 2 gas into the processing container 2 6 and an exhaust gas P 7 3. For example, 5 X 1 0 can be drawn into the processing container. High vacuum degree below -6 To rr y for exhausting □ 7 3 The on-off valve 8 0 and the turbo molecular pump 7 4 and the dry pump 7 6 are connected to the exhaust pipe 7 8 〇 The other side wall of the processing container 2 6 is provided with a wafer access P 8 2 0 for wafer access. 8 2 > A gate valve G 3 is provided to connect and block the moisture removal processing chamber 1 0 and the common handling processing chamber 4. Winter: This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)-11-490727 A7 B7 V. Description of the invention (9) Fig. 5 is an oxide film removal processing chamber 14 constructed as a RIE (reactive ion etching) plasma device. As shown in the figure, the oxide film removal processing chamber 14 has a processing container 84 formed of, for example, aluminum and formed into a bottomed cylindrical shape. A processing table 88 is formed in the processing container 84 to constitute a lower electrode. The mounting table 8 8 is formed of a conductive material such as Ming, and is supported at the bottom 8 4A of the processing container 8 4 by an insulating material 8 6. The mounting platform 8 8 is connected in series with a switch 9 8 and a power supply line 1 2 of the integrated box 1 00, and the connection can generate, for example, a high-frequency power supply of a plasma of 1 3 · 5 6MHZ 1 0 4 〇 The mounting platform 8 8 On the upper side, an electrostatic chuck (made of polyurethane) 90 embedded in the inside is placed. The chuck surface of the electrostatic chuck 90 should be printed in order to enable it to hold the wafer W by Coulomb force, and printed on the electrostatic chuck Central Consumers Bureau of the Ministry of Economic Affairs Consumer Cooperatives 90 through wiring 9 2 and switches 9 4 and connected to the high-voltage DC power source 9 6. In order to ensure the uniformity of the plasma processing performed on the inner surface of the wafer W, a focus ring for holding the outer periphery of the wafer W and determining the position of the wafer W is provided on the upper side peripheral portion of the electrostatic chuck 90 1 0 6. When the wafer W is carried in and out of the oxide film removal processing chamber 14 through the gate valve G 5, the wafer W can be supported above the mounting table 8 8, and the lifting bolt 1 supporting the wafer W can be raised and lowered. The up-down direction extends through the mounting table 88 and the electrostatic chuck 90. On the lower side of the mounting table 8 8 is provided a telescopic tube 1 10 that can be extended and retracted, and bellows 1 1 009 can be lifted and lowered 1 08 in order to maintain airtightness in the processing container 84. The telescopic tube 1 1 0 keeps the airtightness inside and the lifting bolt 10 8 penetrates the telescopic tube 1 10 through the airtightness. In addition, the telescopic tube 1 1 0 passes the bottom of the processing container 8 4 and the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ -12-490727 A7 ______B7_____ V. Description of the Invention (1〇) 84A The provided holes 1 1 2 extend to the outside of the processing container 84. The top of the opening of the processing container 8 4 is provided with a top plate 1 1 6 which is hermetically sealed through a sealing member 1 1 4. The top plate 1 1 6 is provided with a shower head 1 2 0 which constitutes an upper electrode. A shower head 1 2 0 is provided with a diffusion plate 1 1 8 inside. A gas ejection plate 1 2 4 having a plurality of ejection holes 1 1 2 is provided below the diffusion plate 1 1 8. A cooling jacket 1 2 6 is provided on the side close of the shower head 1 2 0. The cooling jacket 1 2 6 cools the shower head 1 2 0 by, for example, the flow of cooling water. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. The top plate 1 1 6 is provided with a gas introduction port 1 2 8 from the upper side of the shower head 1 2 0 into the processing container 8 4. The gas introduction ports 1 2 8 are successively used as an etching gas, using an H2 gas source 1 38, a krypton 2 gas supply pipe 1 30 for supplying krypton 2 gas, and an etching gas, using a BC 13 gas source 140, and supplying a BC 13 gas. BC 1 3 gas supply pipe 1 3 2. A mass flow controller 1 3 4 and an on-off valve 1 3 6 are provided in the middle of each supply pipe 1 3 0 and 1 3 2. In the case where the carpet-type aluminum film is formed on the wafer W in the film forming processing chambers 16 and 18, the gas is introduced into the processing container 8 4 through the gas supply pipe 1 3 0WH2, and the wafer is formed in the film forming processing chambers 16 and 18. In the case where the selective type film is generated, BC 13 gas is introduced into the processing container 84 through the BC 13 gas supply pipe 1 32. As shown in the figure, the Ar gas can be supplied from the Ar gas source 154 as the mixed gas. Although not shown in the figure, N 2 gas may be supplied as a purge gas. The bottom part of the processing container 8 4 is equipped with exhaust gas at the periphery of the Japanese paper. Japanese paper size is applicable to Chinese National Standard (CNS) A4 size (210 X297 mm) ~ "-13 ~ 490727 Employees of the Central Standards Bureau of the Ministry of Economic Affairs Cooperative Du printed A7 B7 V. Description of invention (11) 1 4 2 In order to evacuate the processing container 8 4 to a high vacuum level of, for example, 5 X 1 0-6 Torr or less, the moisture removal processing chamber 10 shown in FIG. 1 50, on the way there are turbo molecular pump 146 and dry pump 148. The sidewall of the processing container 84 is provided with a wafer inlet and outlet 152. A gate valve G 5 for connecting and blocking the oxide film removal processing chamber 14 and the common transfer chamber 4 is provided at the wafer entrance and exit 1 5 2. The τκ gas component removal processing chamber 12 is shown in FIG. 6. As shown in the figure, in order to separate and remove harmful gases such as B c 1 3 attached to the surface of the wafer w, the gas component processing chamber 12 has the same structure as that of the moisture removal processing chamber 10, and additionally has ultraviolet irradiation. Means 1 5 6. In other words, the description of the parts having the same configuration as that of the moisture removal processing chamber 10 is omitted hereinafter, and only the ultraviolet irradiation means will be described. A large-diameter ultraviolet transmission hole 1 5 8 is formed on the top plate 2 8 of the processing container 2 6 in the gas component removal processing chamber 12. The transmission hole 1 5 8 is made of a material (for example, quartz) that can transmit ultraviolet rays, and the transmission plate 1 60 is kept airtight by the arrangement of the sealing member 16 6. A light box 16 2 is provided on the upper side of the transparent plate 180 to cover the transparent plate 180. The light box 1 6 2 is fixedly mounted on the upper side of the equal plate 2 8 by a pressure member 16 and a screw 1 6 4. In the light box 16 2, an ultraviolet lamp 1 70 for irradiating the wafer w placed on the mounting table 40 with ultraviolet UV is housed. The wafer W placed on the mounting table 40 is heated to a predetermined temperature (for example, about 30 ° C) by a heater 4 4 mounted on the mounting table 40 and excited by ultraviolet rays emitted from an ultraviolet lamp 170 at the same time. 、 The size of the attached paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public holiday) -14 I (Please read the precautions on the back before filling this page) Order 490727 A7 V. Description of the invention (l2) on the surface C1 ions and so on. At this time, N2 gas and H2 gas are supplied into the processing container 26 from the gas introduction nozzle 72 as necessary. In order to draw the inside of the processing container 2 6 to a high degree of vacuum of, for example, 5 X 1 0 ^ Τοί ·, the exhaust port 7 3 of the processing container 2 6 is connected to the exhaust line 7 8, and an on-off valve 8 is in the middle. 0 with turbo molecular pump 7 4 with dry pump 76. A wafer inlet / outlet 82 is provided on a side wall of the processing container 26. A gate valve G 4 is provided at the wafer entrance and exit 8 2 so as to communicate and block the gas component removal processing chamber 12 and the common transfer chamber 4. FIG. 7 shows the first film formation processing chamber 16. Since the second film-forming processing chamber 18 is completely the same as the first film-forming processing chamber shown in FIG. 7, the description is omitted. / As shown in the figure, the film forming processing chamber 16 configured as a thermal CVD film forming apparatus has a processing container 1 72 formed into a cylindrical shape from aluminum, for example. An insertion hole 174 is formed in the central portion of the bottom portion 17 2A of the processing container 17 2 so that the power supply plugs 194 and 200 can be inserted. An exhaust port 1 80 is provided in the peripheral portion of the bottom portion 17 2A of the processing container 17 2. In order to draw the processing container 1 72 to a height of, for example, 5 X 1 0 -6To 1 * 1 * or less, please read the note on the back first.

頁 經濟部中央標準局員工消費合作社印製 口浦 氣幫 排子 於分 , 輪 度渦 空有 真中 8 7 路。 管 8 氣 7 排 1 著浦 續幫 接乾 ， 與 途 其 9 台延 置方 載下 狀向 板著 圓形 的成 製體 鋁一 化部 氧央 如中 例面 有下 設的 內 2 2 8 7 1 1 台 器置 容載 mil 理。 處 2 8 通以 插而 於 6 部 設 8 底 由 1 的 介件 2 端構 7 下封 1 的密器 4 等容 8 } 理 lng處 部Γ1在 腳0-設 0 C裝 4 環定 8 歐固 1 的地 部部密 腳邊氣 狀周 8 筒 4 8 圓 7 1 的 1 絲 伸孔螺 準 標 家 I國 國 尺 張 -紙 本 -釐 公 7 9 2 一 15 - 490727 圓W被加熱 以s i C蒸 0接續著接 氣絕緣性插 8 4的內部 外部。載置 未於圖中表 使靜電卡盤 W，靜電卡 接續著接到 0。插線 孔1 7 4而 1 9 2以外 晶圓W即可 請 先 閲 讀 背 之 注 意 事 項 再Page Printed by the Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Tubes 8 gas 7 rows 1 are connected to the urethane trunk, and 9 sets of them are placed on the side to form a round body of aluminum. The oxygen center of the aluminum forming part has the inner part as shown in the example. 2 2 8 7 1 1 units are equipped with a capacity of mil. Place 2 8 through to insert in 6 sets 8 bases 1 by 1 2 end structure 7 under seal 1 denser 4 equal volume 8} manage lng part Γ1 at feet 0-set 0 C installed 4 ring 8 The solid part of Ougu 1 gas-filled periphery 8 tube 4 8 round 7 1 of 1 silk extension hole screw standard home country I paper rule-paper-centimeter 7 9 2 a 15-490727 round W quilt Heating is carried out at si C, followed by the inside and outside of the gas-insulating plug 8 4. Place the electrostatic chuck W and the electrostatic card one after another. Wafers other than plug holes 1 7 4 and 19 2 can be read. Please read the notes on the back before reading.

頁 訂 經濟部中央標準局員工消費合作社印製 A7 五、發明説明（I3) 1 7 2A。爲使載置台1 8 2的上面載置的晶 到指定的溫度，於載置台1 8 2上埋設有例如 鍍的碳製電阻發熱體1 9 0。電阻發熱體1 9 續於介由開關1 9 6接續至供電部1 9 8的電 線1 9 4。此插線1 9 4通過圓筒狀的腳部1 以及插通孔1 7 4而被拉到處理容器1 7 2的 台1 8 2的上面設置有其內埋入銅等導電板（ 示）的薄陶瓷製靜電卡盤1 9 2。應需要，爲 1 9 2的卡面可以藉由庫倫力而保持吸著晶圓 盤未於圖中表示的導電板上介由開關2 0 2而 高壓直流電源2 0 4的電氣絕緣性的插線2 0 2 0 0通過圓筒狀的腳部1 8 4的內部與插通 被拉到處理容器1 7 2的外部。又，靜電卡盤 也可以使用機械夾具，使此機械夾具可以保持 對於成膜處理室1 6而將晶圓W介由門閥G 6搬進搬 支台設拴 置安幾 ， 置別提 設地而 方載分的 體密， 上通個置 一氣向 的貫數位 ο 被方 2 下複定 1 而的 8 上通指。2 4 對 1 並貫的部頭 1 相 台伸 8 邊緣蓬 22 置延 ο 周周.蓮件 8 載 822 的與構 1 在 ο 拴 9W，封台 撐 2 提 1 圓部密置 支拴。盤晶頂等載 被提 2 卡撐的環與 以的 9 電支 2 歐於 可降 1 靜側 7 由位 W升盤與下 1 藉 ο 圓以卡 2 由器 ， 1 晶可電 8 而容 2 2 使且靜 1 內理 1 頭 爲W與台 6 處 2 蓬 , 圓 CN1 置 ο 於板蓮 時晶 8 載 2 頂。 出撐 1 於孔 的裝 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 490727 A7 B7 五、發明説明（π) 乎將載置台1 8 2的整個上面都覆蓋住。蓮蓬頭2 1 0爲 使處理氣體能夠被以淋浴狀導入處理容器1 7 2內’其下 面的噴射面216具有噴出處理氣體用的多數噴射孔 2 1 6Α。頂板2 1 2設有導入對蓮蓬頭2 10導入處理 氣體用的導入口 2 1 8。於導入口 2 1 8接續著流通處理 氣體的供氣管路2 2 0。於蓮蓬頭2 1 0內，爲了讓由供 氣管路2 2 0所供應的處理氣體擴散，分別於上側的第1 擴散板2 2 5與下側的第2擴散板2 2 6設有多數的擴散 孔 2 2 2。 於處理容器1 7 2的側壁，爲了冷卻此壁面而設有以 例如5 0 °C的溫水作爲冷媒而流動的冷卻套2 2 8。處理 容器1 7 2的側壁設有晶圓進出口 2 3 0。晶圓進出口 2 3 0設有連通、遮斷成膜處理室1 6與共通搬送室4之 間的門閥G 6。 * 於處理容器172，使用有機金屬氣體DM AH (雙甲基 經濟部中央標準局員工消費合作社印製 鋁氫化物）作爲處理氣體，而藉由C V D法於晶圓W形成 鋁膜。此DMAH於常溫也具有8 0 0 0 0 0 0 c p的高 黏度。也就是說，要經由供給管路2 2而做高精度流量控 制是困難的。因此，於本實施例利用藉由攜帶氣體而將液 狀的DMAH壓送至氣化器使其氣化之直接氣化法。 具體而言，儲液槽2 3 2內所收容的原料液體（ DMAH) 234之中浸漬著供給管路220的一端。供 給管路2 2 0的途中，設有液體用的流量控制器2 4 0以 及氣化器2 4 2。原料液體2 3 4的液面上側有壓送管 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17 - 490727 A7 B7 經濟部中央標準局員工消費合作社印製 五、 發明説明 ( 15) 1 1 2 3 8 的 一 個 端 部 〇 壓 送 管 2 3 8 的 另 一 端 接 續 著 充 填 有 1 | 例 如 3 k g f / C m 2程度的壓力的^ \ ： f氣體 (攜帶氣體 1 I ) 的 A r 鋼 瓶 2 3 6 0 於 此 構 成 ， 藉 由 Ar .氣 體 的 氣 壓 而 將 1 1 I 儲 液 槽 2 3 2 內 的 原 料 液 體 2 3 4 壓 送 至 供 給 管 路 2 2 0 請 先 1 -I 〇 供 給 管 路 2 2 內 被 壓 送 的 原 料 液 體 經 由 質 量 流 量 控 制 器 讀 背 1 2 4 0 而 控 制 其 流 量 導 入 氣 化 器 2 4 2 〇 被 導 入 氣 化 器 之 注 去 1 2 4 2 的 原 料 液 體 2 3 4 藉 由 對 氣 化 器 2 3 4 供 給 的 高 壓 思 事 項 1 I 再 1 氫 氣 氣 體 而 因 焦 耳 — 湯 姆 森 效 應 而 被 氣 化 成 爲 處 理 氣 體 〇 填感 ϋ 本 又 供 給 管 路 2 2 0 白 氣 化 器 2 4 2 以 下 的 下 游 側 部 位 9 爲 頁 、✓ 1 I 了 防 止 處 理 氣 體 fuz. 再 度 液 化 > 對 於 供 給 管 路 2 2 0 設 有 可 將 1 1 I 其 加 熱 至 例 如 6 0 °C ( 或 者 是 4 5 °C ) 的 帶 狀 加 熱 器 1 1 I 2 2 4 ( ts| 圖 中 以 虛 線 表 示 ) 〇 又 y 亦 可 將 D Μ A Η 的 原 液 1 訂 白 身 加 熱 至 8 0 °c ( 或 者 是 5 0 °C ) 使 D Μ A Η 黏 度 降 低 1 1 之 後 再 通 過 供 給 管 路 2 2 0 而 壓 送 之 〇 1 1 第 8 圖 顯 示 冷 卻 處 理 室 2 0 〇 如 圖 所 示 9 冷 卻 處 理 室 1 | 2 0 具 有 例 如 以 鋁 爲 才 值 得 有 底 筒 狀 處 理 容 器 2 4 6 〇 處 i 理 容 器 2 4 6 的 內 部 設 有 例 如 由 鋁 所 製 之 冷 卻 台 2 4 8 〇 1 1 | 冷 卻 台 2 4 8 的 上 面 形 成 有 載 置 晶 圓 W 的 載 置 面 〇 載 置 於 1 I 冷 卻 台 2 4 8 上 的 晶 圓 W 可 以 被 冷 卻 到 例 如 5 0 V 的 溫 度 * - 1 > 於 冷 卻 台 2 4 8 設 有 流 動 有 例 如 2 5 V 的 冷 媒 ( 例 如 冷 ：| 卻 水 ) 的 冷 卻 套 2 5 0 0 對 於 冷 卻 處 理 室 2 0 晶 圓 W 藉 1 I 由 門 閥 G 8 搬 進 搬 出 時 爲 了 將 晶 圓 W 支 撐 於 冷 卻 台 1 I 2 4 8 的 上 方 支 撐 晶 圓 W 且 可 以 升 降 的 提 拴 2 5 2 上 下 1 1 I 方 向 延 伸 且 貫 通 冷 卻 台 2 4 8 〇 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） - 18 - 490727 A7 B7______ 五、發明説明（16) 處理容器2 4 6的頂部介由密封構件2 5 6而可以裝 拆地氣密地裝設了頂板2 5 4。於處理容器2 4 6的底部 2 4 6 A的周邊部設有排氣口 2 5 8。爲使處理容器 246內抽到例如5x10 —6To:rr以下的高真空度’於排 氣口 2 5 8，接續著排氣管路2 64，其途中有渦輪分子 幫浦260與乾幫浦262。處理容器246的一方側壁 設有對處理容器2 4 6內供給A r氣體等非活性氣體的氣 體噴嘴2 6 6。處理容器2 4 6的另一方側壁設有晶圓出 入口 2 6 8。晶圓出入口 2 6 8設有連通、遮斷冷卻處理 室2 0與共通搬運室4的門閥G8。 其次，說明使用上述構成的叢集型處理裝置對半導體 晶圓施以成膜處理的過程。 首先參照第1圖說明晶圓W處理的整個流程。 因爲鋁膜容易與空氣或是水分起反應而產生氧化膜， 因此卡匣室6、8以及共通搬送室4及各處理室1 〇、 經濟部中央標準局員工消費合作社印製 1 2、14、16、18、20的內部於未使用時爲了防 止氧化膜的形成都維持在5 X 1 0_6 Tori'以下的高真空度 。爲了達到如此的高真空度而在各室接續著排氣管路，且 於其途中設有渦輪分子幫浦與乾幫浦。 各室內維持在5 X 1 Ο-6 Tori*以下的高真空度的狀態 下，收容未處理的半導體晶圓W的卡匣C介由閥門GD 1 而搬入例如第1卡匣室6之內。卡匣C被搬入第1卡匣室 6內之後，關閉閥門GDI ，第1卡匣室6內再度抽到5 X 1 0 _eTorr以下的高真空度。第1卡匣室6內再度達到 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 490727 A7 B7 五、發明説明（17) 5 X 1 0 — 6Torr以下的高真空度時，打開門閥G1 ，藉由 預先被抽到5 X 1 0 -6Το:τι·以下的高真空度的共通搬送室 4內的搬送臂2 4而將卡匣C內的未處理晶圓W移動到共 通搬送室4內的旋轉位置決定機構2 2。旋轉位置決定機 構2 2檢測出晶圓W的方向而對正其位置。 藉由旋轉位置決定機構2 2而對正位置的晶圓W，藉 由搬送臂2 4而通過打開了的門閥G 3，被搬入預先維持 在5 X 1 0_6Torr以下的高真空度的水分除去處理室1 0 內。臂上門閥G 3後，於水分除去處理室內被加熱，將附 著於晶圓W表面的水分等氣化而除去之。除去水分後的晶 圓W藉由搬送臂2 4而通過打開的門閥G 5而搬進預先維 持於5 X 1 0—6 Torr以下的高真空度的氧化膜除去處理室 1 4內。關閉門閥G5後，於氧化膜除去處理室1 4內， 藉由蝕刻而將附著於晶圓W表面的自然氧化膜除掉。此時 ，在成膜處理室16 (18)內，產生選擇性鋁膜的場合 經濟部中央標準局員工消費合作杜印製 ，使用例如BC1 3氣體。在成膜處理室16 (18)內 ，產生地毯性鋁膜的場合，使用例如H2氣體。B C 1 3氣 體的氣體成份之B離子以及C1離子特別是C1離子對於 鋁膜的電氣特性有不良影響。也就是說，使用B C 1 3氣 體作爲蝕刻氣體而使用時，需要在氣體成份除去處理室 1 2內將晶圓W表面的氣體成份完全除去。也就是說，以 B C 1 3氣體除去自然氧化膜的晶圓W藉由搬送臂2 4而 通過打開的門閥G 4而被搬進預先維持於5 X 1 Ο—6 To rr 以下的高真空度的氣體成份除去處理室1 2內。關閉門閥 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公| · 一 20 - 490727 A7 B7 經濟部中央標準局員工消費合作社印製 五、 發明説明 ( 18) G 4 後 於 氣 體 成 份 除 去 處 理 室 內 y 藉 由 加 熱 以 及 紫 外 線 來 激 發 C 1 離 子 使 C 1 離 子 白 晶 圓 W 表 面 脫 離 而 被 排 除 如 此 y 將 白 然 氧 化 膜 以 及 氣 體 成 份 除 去 後 之 晶 圓 W 接 著 藉 由 搬 送 臂 2 4 而 介 由 門 閥 G 6 G 7 而 被 搬 進 預 先 被 維 持 於 5 X 1 0 -6 To r r 以 下 的 筒 真 空 度 的 第 1 或 第 2 成 膜 處 理 室 1 6 1 8 內 ο 當 然 > 在 氧 化 膜 除 去 處 理 室 1 4 內 所 使 用 的 蝕 刻 氣 體 若 非 Β C 1 3氣體而是Η 2 氣 體 Γ*-ΣΖ» 的 話 晶 圓 W 可 以 不 經 由 氣 體 成 份 除 去 處 理 室 1 2 而 由 氧 化 膜 除 去 處 理 室 1 4 直 接 被 搬 送 到 第 1 或 第 2 成 膜 處 理 室 1 6 1 8 內 〇 考 慮 成 膜 處 理 所 需 的 時 間 ， 爲 了 增 進 生 產 率 需 要 兩 個 成 膜 處 理 室 〇 於 成 膜 處 理 室 1 6 ( 1 8 ) ， 使 用 D Μ A Η 氣 體 作 微 處 理 氣 體 y 藉 由 C V D 處 理 而 於 指 定 溫 度 在 晶 圓 W 上 形 成 銘 膜 〇 形 成 銘 膜 之 後 的 晶 圓 W 接 著 通 過 打 開 的 門 閥 G 8 而 搬 進 預 先 被 維 持 於 5 X 1 0 -6 To r r 以 下 的 高 真 空 度 的 冷 卻 處 理 室 2 0 內 〇 在 冷 卻 處 理 室 2 0 內 將 晶 圓 W 冷 卻 至 指 定 的 操 作 溫 度 〇 被 冷 卻 到 操 作 溫 度 的 已 經 成 膜 處 理 過 的 晶 圓 W 接 著 由 搬 送 臂 2 4 通 過 門 閥 G 2 ， 被 送 到 預 先 被 維 持 於 5 X 1 0 一 6 Tor r 以 下 的 高 真 空 度 的 第 2 卡 匣 室 8 內 的 卡 匣 C 內 收 容 〇 其 次 個 別 說 明 各 處 理 室 的 具 體 處 理 0 首 先 參 照 第 2 圖 說 明 水 分 除 去 處 理 〇 於 處 理 刖 1 因 爲 通 CM 過 排 氣 管 路 7 8 而 預 先 將 處 理 容 器 2 6 內 維 持 於 5 X 1 0 一 6 To r r 以 下 的 高 真 空 度 所 以 可 以 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 - 經濟、邵中央標準局員工消費合作社印製 490727 A7 ___^____B7 ___ 五、發明説明（I9) 防止被搬入處理容器2 6內的晶圓W的表面附著自然氧化 膜。被載置於載置台4 0上的晶圓W，藉由被埋在載置台 4 0的加熱器4 4而被加熱。此時，晶圓W的加熱溫度被 設定爲例如4 0 〇°C程度，水分除去處理室1 〇內的壓力 在1^2氣體氣氛下，被設定爲約5 X 1 〇-6Torr程度。藉 由加熱而氣化而自晶圓W表面分離出來的水分通過排氣管 路7 8而被排放掉。水分除去處理所需的時間因處理溫度 不同而異。處理溫度在4 0 0°C時，處理時間被設定爲例 如1 80秒程度。處理中，處理容器26所設的冷卻套 9 0流動著冷媒，以防止處理容器2 6過度升溫。 又，此水分除去處理室1 0要進行維修的話，只要在 自處理容器2 6取下頂板2 8的狀態下，如第4圖所示拆 下蜂絲42、50即可。此狀態下將單元裝著板38朝向 上方拉上的話，介由連結棒6 6、6 4而可以把與單元裝 著板3 8成一體連結的接頭單元4 8也一起往上拉。此時 ，當然要預先自接續的配線5 8分離電熱器電源6 0以及 拉出接頭5 2。因爲支撐載置台4 0的單元裝著板3 8與 接頭單元4 8可以成一體地取出，所以容易進行加熱氣 4 4或載置台4 0或者是接頭單元4 8的維修作業。 其次，參照第5圖說明氧化膜除去處理。 於處理前，因爲通過排氣管路1 5 0而預先將處理容 器8 4內維持於5 X 1 0_6Torr以下的高真空度，所以可 以防止被搬入處理容器8 4內的晶圓W的表面附著自然氧 化膜。被載置於載置台8 8上的晶圓W，藉由靜電卡盤 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再热馬本頁) 訂 - 22 - 490727 A7 B7 五、發明説明（20) 9 0所發生的庫倫力而被保持於載置台8 8的載置面上。 於此狀態，自作爲上部電極的蓮蓬頭1 2 0供給蝕刻氣體 ，而對作爲下部電極的載置台8 8施以來自高周波電源 104的13·56MHz的高周波電壓。藉此，載置台 8 8與蓮蓬頭1 2 0之間發生電漿，而進行電漿蝕刻處理 。此時，於成膜處理室16 (18)在晶圓W表面生成選 擇式鋁膜的場合，使用B C 1 3氣體作爲蝕刻氣體。於成 膜處理室1 6 ( 1 8 )在晶圓W表面生成地毯式鋁膜的場 合，使用Η 2氣體作爲蝕刻氣體。又，於蝕刻處理中，爲 防止蓮蓬頭1 2 0被過度加熱，冷卻套1 2 6內有冷媒流 動。以下顯示蝕刻條件： 請 先 閲 讀 背 之 注 意 事 項 再 填 寫 本 頁 處理氣體供給量 經濟部中央標準局員工消費合作社印製 製程中之壓力 晶圓溫度 處理時間 〔蝕刻條件〕 4 0 0SCCM程度（BCU氣體） 100SCCM程度（Ar氣體） 100SCCM程度（Η2氣體） 4 0m〜1 50πιΤογγ程度 6 0 °C以下 6 0〜2 4 0秒程度 其次，參照第6圖而說明氣體成份處理過程。 於處理前，因爲通過排氣管路7 8而預先將處理容器 2 6內維持於5 X 1 0_6 To rr以下的高真空度，所以可以 防止被搬入處理容器2 6內的晶圓W的表面附著自然氧化 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） - 23 - 490727 A7 B7 經濟部中央標準局員工消費合作社印製 五、 發明説明 ( 21) I 膜 〇 被 載 置 於 載 置 台 4 0 上 的 晶 圓 W ，藉由 被 埋 在 載 置 台 1 1 4 0 的 加 熱 器 4 4 而 被 加 熱 至 指 定 溫 度（例 如 3 0 0 °C 程 1 1 度 ) 〇 同 時 位 於 晶 圓 W 上 方 的 紫 外 線 照射手 段 1 5 6 的 紫 1 1 外 線 燈 1 7 0 所 發 出 來 的 例 如 波 長 爲 2 5 4 η m 的 紫 外 線 請 先 1 :1 U V 透 過 透 ίΙΗ, 過 板 1 6 0 而 照 射 至 晶 圓W表 面 〇 藉 由 加 熱 閱 讀 背 1 器 4 4 加 熱 以 及 紫 外 線 照 射 的 協 同 效 果，附 著 於 晶 圓 W 表 面 1 面 的 B C 1 3分子 、Β離子 、C : 1離子等氣體成份依高能 意 事 項 1 量 的 順 位 而 被 激 發 〇 此 氣 體 aa 成 份 被 激 發到與 晶 圓 W 表 面 的 再 % 4 結 合 能 以 上 的 能 量 時 j 氣 體 tiiSjL 成 份 即 會 自晶圓 W 表 面 脫 離 而 本 頁 I 被 排 氣 系 統 7 8 吸 引 排 除 〇 處 理 中 > 處理容 器 2 6 內 的 壓 1 1 I 力 在 H2 氣 體 或 是 Ν 2氣體氣氛下， ，維持在5 m - L 5 0 ιηΤ- 1 1 1 or r 程 度 〇 處 理 容 器 內 若 是 以 例 如 Η 2氣體設定爲數] L 0 1 訂 mTo r r 程 度 的 壓 力 的 場 合 可 以 提 高 C 1離 子 的 除 去 效 率 1 1 以 及 防 止 氧 化 效 率 0 處 理 時 間 因 處 理 溫度與 紫 外 線 U V 的 1 1 強 度 而 異 〇 紫 外 線 的 波 長 爲 2 5 4 η m強度 爲 3 0 m W / 1 I C m 2的場合， 1處理時間被設定爲例如1 8 0秒£ ) K 又 對 此 氣 體 成 份 除 去 處 理 室 1 2進行 維 修 時 在 頂 1 1 板 2 8 商 處 理 容 器 2 6 移 開 的 狀 態 下 ，只要 拆 下 螺 絲 4 2 1 1 5 0 即 可 〇 於 此 狀 態 下 將 單 元 裝 著 板3 8 朝 向 上 方 拉 上 # 1 I 的 話 > 介 由 連 結 棒 6 6 6 4 而 可 以 把與單 元 裝 著 板 3 8 1 ：| 成 —. 體 連 結 的 接 頭 單 元 4 8 也 一 起 往 上拉。 此 時 當 然 要 1 1 預 先 白 接 續 的 配 線 5 8 分 離 電 熱 器 電 源6 0 以 及 拉 出 接 頭 1 I 5 2 〇 因 爲 支 撐 載 置 台 4 0 的 單 元 裝 著板3 8 與 接 頭 單 元 1 I 4 8 可 以 成 — 體 地 取 出 9 所 以 容 易 進 行加熱 氣 4 4 或 載 置 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -24 - 經濟部中央標準局員工消費合作社印製 490727 A7 _________B7_ 五、發明説明（Μ) 台4 〇或者是接頭單元4 8的維修作業。 其次，參照第7圖說明氧化膜除去處理。 於處理前，因爲通過排氣管路1 7 9而預先將處理容 器1 7 2內維持於5 X 1 0_6 To rr以下的高真空度，所以 可以防止被搬入處理容器1 7 2內的晶圓W的表面附著自 然氧化膜。被載置於載置台1 8 2上的晶圓W ’藉由靜電 卡盤1 9 2所發生的庫倫力而被保持於載置台1 8 2的載 置面上。於此狀態，爲了在晶圓W的表面藉由C VD而形 成鋁膜，由電阻發熱體1 9 0將晶圓W加熱至指定的操作 溫度（例如2 0 0 °C)，以DMAH的氣化氣體作爲處理 氣體而由蓮蓬頭2 1 0導入處理容器1 7 2內。此時的操 作壓力設定爲例如2 Tor r程度。DMAH以氣體換算約爲 loose CM程度供給。 成膜處理中，處理容器1 7 2的側壁所設的冷卻套 2 2 8內流有例如5 0°C程度的冷媒。成膜處理後’再度 將處理容器1 7 2內抽至5 X 1 0-6Torr的壓力。也就是 說，極力抑制成膜處理後之鋁膜防止自然氧化膜的附著。 其次，參照第8圖說明晶圓W的冷卻處理。 於處理前，因爲通過排氣管路2 6 4而預先將處理容 器2 4 6內維持於5 X 1 Ο—6 Tori'以下的高真空度，所以 可以防止被搬入處理容器2 4 6內的晶圓w的表面附著自 然氧化膜。因爲成膜處理後的晶圓W溫度在2 0 0 °C左右 ，於冷卻處理室，藉由設於冷卻台2 4 8的冷卻套2 5 0 內流以例如2 5 °C程度的冷媒，而將冷卻台2 4 8上所載 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 #f -25 - 490727 A7 B7 五、發明説明（23) 置的晶圓W冷卻至5 0°C程度的操作溫度。於處理中爲了 抑制對晶圓W氧化膜的形成，處理容器2 4 6內的壓力在 例如A I*氣氛下，維持在例如1 Tor r程度。 如以上說明，本實施例相關的叢集型處理裝置2不僅 具有於晶圓W形成鋁膜用的成膜處理室1 6、1 8，還有 在成膜處理時進行必須的前處理或是後處理用的複數個處 理室10、12、14、20以共通搬運室4爲中心而集 合在一起，構成一個單元。也就是說，由此叢集型處理裝 置2，晶圓W在處理途中不會曝於大氣，可以連續進行形 成鋁膜所必要的處理，可以在晶圓W上形成品質以及電氣 特性良好的鋁膜。 又，本實施例相關的叢集型處理裝置2，因爲具有可 以除去蝕刻氣體成份用的氣體成份除去處理室1 2 ’因而 適用於選擇性的形成鋁膜。 又，本實施例相關的叢集型處理裝置2的水分除去處 理室1 0與氣體成份除去處理室1 2，含有加熱器4 4的 載置台4 0與加熱器4 4的接頭單元4 8對於處理容器 2 6是成爲一體而可以裝拆的。也就是說，可以簡單迅速 地進行水分除去處理室10與氣體成份除去處理室12的 維修作業。 又，本實施例相關的叢集型處理裝置2的成膜處理室 1 6、1 8，如第7圖所示，藉由將液體狀態的成膜原料 2 3 4直接氣化的直接氣化法而於晶圓W生成鋁膜的緣故 ，可以多量供給處理氣體。又，成膜處理室16、18與 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 請 先 閱 讀 背 ιέ 之 注 意 事 項 再Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 V. Invention Description (I3) 1 7 2A. In order to bring the crystals placed on the upper surface of the mounting table 1 2 to a predetermined temperature, for example, a plated carbon resistance heating element 190 is embedded in the mounting table 1 8 2. The resistance heating element 19 is continued to the wire 1 9 4 connected to the power supply portion 19 8 through the switch 1 9 6. This plug wire 1 9 4 is drawn to the processing container 1 7 2's stage 1 8 2 through the cylindrical leg portion 1 and the through hole 1 7 4. A conductive plate with copper embedded therein is provided (shown) Thin ceramic electrostatic chuck 1 9 2. If necessary, the card surface of 192 can be held by the Coulomb force to attract the wafer. The electrically insulating plug of the high-voltage DC power source 024 is inserted on the conductive plate not shown in the figure through the switch 2 0 and the high-voltage DC power supply 2 0 4. The wire 2 2 0 0 is pulled to the outside of the processing container 17 2 through the inside and insertion of the cylindrical leg portion 1 8 4. In addition, a mechanical jig can also be used for the electrostatic chuck, so that the mechanical jig can hold the wafer W to the film-forming processing chamber 16 through the gate valve G 6 and move it into the moving support table to set up a fixed number of places. The body density of the square load points, the upper pass is placed in the same direction digits ο by the square 2 reset 1 and the 8 upward pass. 2 4 to 1 coherent heads 1 phase extension 8 edge awning 22 extension ο Zhou Zhou. Lotus piece 8 load 822 and structure 1 at ο 9W, sealing platform support 2 lifting 1 round part close support. The top of the pan crystal is equally loaded with the ring of the sling 2 and the support of the 9 electric branches 2 ohms can be lowered 1 The static side 7 is raised by the bit W and the next 1 is borrowed ο The circle is the card 2 router, 1 crystal can be electrically 8 and The capacity 2 2 makes and static 1 internal management 1 head is W and 6 at the platform 2 canopy, the circle CN1 is placed ο on Banlian Shijing 8 loads 2 tops. The support 1 is installed in the hole. The paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 490727 A7 B7. 5. Description of the invention (π) It covers the entire upper surface of the mounting table 1 8 2. The shower head 2 10 allows the processing gas to be introduced into the processing container 17 2 in a shower shape. The lower spraying surface 216 has a plurality of spray holes 2 1 6A for spraying the processing gas. The top plate 2 1 2 is provided with an inlet 2 1 8 for introducing a treatment gas into the shower head 2 10. The inlet 2 1 8 is connected to a gas supply line 2 2 0 for processing gas. In the shower head 2 1 10, in order to diffuse the processing gas supplied from the gas supply pipe 2 2 0, a plurality of diffusions are respectively provided on the upper first diffusion plate 2 2 5 and the lower second diffusion plate 2 2 6. Hole 2 2 2. A cooling jacket 2 2 8 is provided on the side wall of the processing container 172 to cool the wall surface, for example, by using warm water at 50 ° C as a refrigerant. The side wall of the processing container 17 2 is provided with a wafer inlet and outlet 2 3 0. The wafer inlet and outlet 2 3 0 is provided with a gate valve G 6 that communicates with and blocks the film forming processing chamber 16 and the common transfer chamber 4. * In the processing container 172, an organometallic gas DM AH (aluminum hydride printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs) was used as a processing gas, and an aluminum film was formed on the wafer W by the C V D method. This DMAH also has a high viscosity of 8 0 0 0 0 0 c p at room temperature. That is, it is difficult to perform high-precision flow control through the supply line 22. Therefore, in this embodiment, a direct gasification method in which a liquid DMAH is pressure-fed to a gasifier by carrying a gas is used. Specifically, one end of the supply pipe 220 is immersed in the raw material liquid (DMAH) 234 contained in the liquid storage tank 2 3 2. On the way to the supply line 2 2 0, a liquid flow controller 2 4 0 and a gasifier 2 4 2 are provided. The raw material liquid 2 3 4 has a pressure feed tube on the side of the liquid surface. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -17-490727 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (15) One end of 1 1 2 3 8 0 The other end of the pressure feed pipe 2 3 8 is filled with a pressure of 1 | for example, 3 kgf / C m 2 ^ \: f gas (carrying gas 1 I) The Ar cylinder 2 3 6 0 is constructed here, and the raw material liquid 2 3 4 in the 1 1 I liquid storage tank 2 3 2 is pressure-fed to the supply line 2 2 0 by the pressure of Ar. Gas, please first 1- The raw material liquid that is pressure-fed in the supply line 2 2 is read through the mass flow controller to read back 1 2 4 0 to control its flow rate. It is introduced into the gasifier 2 4 2 〇 The raw material liquid 2 3 4 is supplied by the high pressure supply to the gasifier 2 3 4 1 I then 1 hydrogen gas due to the Joule-Thomson effect It is gasified into the processing gas. 0 Filling. This is also the supply line 2 2 0 White gasifier 2 4 2 and downstream parts below 9 are pages. ✓ 1 I prevents the process gas from fuz. Re-liquefaction > For the supply pipe The circuit 2 2 0 is provided with a strip heater 1 1 I 2 2 4 (ts | is shown as a dotted line in the figure) which can heat 1 1 I to, for example, 60 ° C (or 4 5 ° C). 〇y The stock solution 1 of D Μ A Η can also be heated to 80 ° c (or 50 ° C) to reduce the viscosity of D Μ A Η 1 1 and then pressure-feed it through the supply line 2 2 0. 1 Fig. 8 shows the cooling processing chamber 2 0 〇 as shown in the figure 9 The cooling processing chamber 1 | 2 0 has, for example, aluminum, which is worthy of a bottomed cylindrical processing vessel 2 4 6 〇 i The interior of the processing vessel 2 4 6 There is a cooling stage 2 4 8 〇1 1 made of aluminum, for example. A mounting surface on which the wafer W is mounted is formed on the cooling stage 2 4 8. The wafer W placed on the 1 I cooling stage 2 4 8 can be cooled to a temperature of, for example, 50 V *-1 > The cooling stage 2 4 8 is provided with a refrigerant such as 2 5 V (for example: | Cooling water) cooling jacket 2 5 0 0 For cooling processing chamber 2 0 Wafer W is borrowed 1 I to be carried in and out by gate valve G 8 to support wafer W above cooling table 1 I 2 4 8 W and liftable lifting bolts 2 5 2 Up and down 1 1 I direction extending through the cooling stage 2 4 8 〇1 1 1 This paper size applies to China National Standard (CNS) A4 (210X297 mm)-18-490727 A7 B7______ V. Description of the invention (16) The top of the processing container 2 4 6 is provided with a top plate 2 5 4 air-tightly through a sealing member 2 5 6. An exhaust port 2 5 8 is provided at a peripheral portion of the bottom 2 4 6 A of the processing container 2 4 6. In order to evacuate the inside of the processing container 246 to a high vacuum level of, for example, 5x10-6To: rr or lower, to the exhaust port 2 5 8 and to the exhaust line 2 64, there are a turbo molecular pump 260 and a dry pump 262 . One side wall of the processing container 246 is provided with a gas nozzle 2 6 for supplying an inert gas such as an Ar gas into the processing container 2 4 6. The other side wall of the processing container 2 4 6 is provided with a wafer inlet and outlet 2 6 8. A gate valve G8 for connecting and blocking the cooling processing chamber 20 and the common transfer chamber 4 is provided at the wafer entrance and exit 2 6 8. Next, a description will be given of a process of applying a film forming process to a semiconductor wafer using the cluster processing apparatus having the above-mentioned configuration. First, the entire flow of wafer W processing will be described with reference to FIG. 1. Because the aluminum film easily reacts with air or moisture to generate an oxide film, the cassette chambers 6, 8 and the common transfer room 4 and each processing chamber 10, printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 1 2, 14, The interiors of 16, 18, and 20 are maintained at a high vacuum level below 5 X 1 0_6 Tori 'in order to prevent the formation of an oxide film when not in use. In order to achieve such a high degree of vacuum, an exhaust line is connected in each chamber, and a turbo molecular pump and a dry pump are provided in the middle. Each chamber is maintained at a high vacuum level of 5 × 10-6 Tori * or lower, and the cassette C containing the unprocessed semiconductor wafer W is carried into, for example, the first cassette chamber 6 through the valve GD1. After the cassette C is carried into the first cassette chamber 6, the valve GDI is closed, and the first cassette chamber 6 is again evacuated to a high vacuum level below 5 X 10_eTorr. The first paper cassette chamber 6 reaches the paper size again to the Chinese National Standard (CNS) A4 specification (210X297 mm) 490727 A7 B7 V. Description of the invention (17) 5 X 1 0 — 6 Torr or less, open it The gate valve G1 moves the unprocessed wafer W in the cassette C to the common conveyance by the conveying arm 2 4 in the common conveyance chamber 4 with a high vacuum degree drawn to 5 X 1 0 -6T or less in advance. The rotation position determination mechanism 2 in the chamber 4. The rotation position determining mechanism 22 detects the direction of the wafer W and aligns its position. The wafer W, which is aligned by the rotation position determining mechanism 2 2, is transferred into the moisture removal process maintained at a high vacuum level of 5 X 1 0_6 Torr or more by the gate valve G 3 opened by the transfer arm 24. Room 1 0. After the arm valve G3 is heated in the moisture removal processing chamber, moisture and the like attached to the surface of the wafer W are vaporized and removed. The wafer W after the moisture is removed is transferred into the oxide film removal processing chamber 14 having a high vacuum degree maintained in advance by 5 X 1 0-6 Torr through the open gate valve G 5 through the transfer arm 24. After the gate valve G5 is closed, the natural oxide film attached to the surface of the wafer W is removed by etching in the oxide film removal processing chamber 14. At this time, in the case where a selective aluminum film is generated in the film forming processing chamber 16 (18), the employee of the Central Standards Bureau of the Ministry of Economic Affairs cooperates with Du Du to print, using, for example, BC1 3 gas. When a carpet-like aluminum film is generated in the film forming processing chamber 16 (18), for example, H2 gas is used. The B ions and C1 ions, especially C1 ions, of the gas component of the B C 1 3 gas have an adverse effect on the electrical characteristics of the aluminum film. That is, when B C 1 3 gas is used as the etching gas, it is necessary to completely remove the gas component on the surface of the wafer W in the gas component removal processing chamber 12. In other words, the wafer W from which the natural oxide film is removed by the BC 1 3 gas is carried into the high vacuum degree maintained in advance by 5 X 1 Ο-6 To rr through the open gate valve G 4 by the transfer arm 24. The gas components are removed inside the processing chamber 12. Closing the door valve This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297) | · 20-490727 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (18) G 4 is removed after the gas component In room y, C 1 ions are excited by heating and ultraviolet rays to remove the surface of the white wafer W from C 1 ions, which is excluded. Y The wafer W after the white oxide film and gas components are removed is then introduced by the transfer arm 2 4. It is carried into the first or second film forming processing chamber 1 6 1 8 which is previously maintained at a cylinder vacuum degree of 5 X 1 0 -6 To rr or more by the gate valve G 6 G 7. Of course > The oxide film is removed. If the etching gas used in the processing chamber 1 4 is not a B C 1 3 gas but a krypton 2 gas Γ * -ΣZ », the wafer W can be directly removed from the oxide film removal processing chamber 1 2 without passing through the gas component. Transported to the first or second film forming process In the chamber 16 18, considering the time required for the film forming process, two film forming processing chambers are required in order to increase the productivity. In the film forming processing chamber 16 (1 8), DM A Η gas is used as the micro-processing gas y. A CVD film is formed on the wafer W at a predetermined temperature by the CVD process. The wafer W after the etch film is formed is then moved through a gate valve G 8 which is opened and maintained at a height lower than 5 X 1 0 -6 To rr in advance. Within the cooling processing chamber 20 of vacuum degree, the wafer W is cooled to the specified operating temperature in the cooling processing chamber 20, and the wafer W that has been film-formed and processed to the operating temperature is then passed by the transfer arm 2 4 The gate valve G 2 is sent to the cassette C in the second cassette chamber 8 which is maintained at a high vacuum level of 5 X 10 to 6 Torr or less in advance. Next, the specific processing of each processing chamber will be described individually. Refer to Figure 2 Clear water removal treatment 〇In treatment 刖 1 Because the CM passes the exhaust pipe 7 8 and the treatment container 2 6 is maintained at a high vacuum level of 5 X 1 0 to 6 To rr or less, the paper size can be used in China Standard (CNS) A4 specification (210X297 mm) -21-Printed by the Economic and Shao Central Standards Bureau Employees Consumer Cooperative 490727 A7 ___ ^ ____ B7 ___ V. Description of Invention (I9) Prevent wafers from being moved into processing container 2 6 W A natural oxide film is attached to the surface. The wafer W placed on the mounting table 40 is heated by a heater 44 buried in the mounting table 40. At this time, the heating temperature of the wafer W is set to, for example, about 400 ° C., and the pressure in the moisture removal processing chamber 10 is set to about 5 × 10 to 6 Torr in a 1 ^ 2 gas atmosphere. The water vaporized by the heating and separated from the surface of the wafer W is discharged through the exhaust pipe 78. The time required for the moisture removal treatment varies depending on the treatment temperature. When the processing temperature is 400 ° C, the processing time is set to about 180 seconds, for example. During processing, the cooling jacket 90 provided in the processing container 26 is flowed with refrigerant to prevent the processing container 26 from being excessively heated. In addition, if the moisture removal processing chamber 10 is to be repaired, it is only necessary to remove the honeycomb 42, 50 as shown in Fig. 4 with the top plate 28 removed from the processing vessel 26. When the unit mounting plate 38 is pulled upward in this state, the joint units 4 8 integrally connected to the unit mounting plate 38 can also be pulled up together via the connecting rods 6 6 and 6 4. At this time, of course, it is necessary to separate the electric heater power source 60 from the connected wiring 5 8 and pull out the connector 5 2 in advance. Since the unit mounting plate 38 supporting the mounting table 40 and the joint unit 48 can be taken out integrally, it is easy to perform maintenance work on the heating gas 44 or the mounting table 40 or the joint unit 48. Next, the oxide film removing process will be described with reference to FIG. 5. Prior to processing, the inside of the processing container 8 4 is maintained at a high vacuum level of 5 X 1 0_6 Torr or less through the exhaust line 150, so that the surface of the wafer W carried in the processing container 84 can be prevented from adhering to it. Natural oxide film. The wafer W placed on the mounting table 8 8 adopts the electrostatic chuck. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before reheating the page) Order-22-490727 A7 B7 V. Description of the invention (20) The Coulomb force generated by 90 is held on the mounting surface of the mounting table 8 8. In this state, an etching gas is supplied from the shower head 120 serving as the upper electrode, and a high-frequency voltage of 13.56 MHz from the high-frequency power source 104 is applied to the mounting table 88 serving as the lower electrode. As a result, a plasma is generated between the mounting table 88 and the shower head 120, and a plasma etching process is performed. At this time, when a selective aluminum film is formed on the surface of the wafer W in the film formation processing chamber 16 (18), B C 1 3 gas is used as the etching gas. Where a carpet-type aluminum film is formed on the surface of the wafer W in the film processing chamber 16 (18), a krypton 2 gas is used as an etching gas. In addition, during the etching process, in order to prevent the shower head 120 from being excessively heated, a cooling medium flows in the cooling jacket 1 2 6. The following shows the etching conditions: Please read the precautions on the back before filling out this page. Handle the gas supply amount. Pressure wafer temperature processing time in the printing process of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. ) Degree of 100SCCM (Ar gas) Degree of 100SCCM (气体 2 gas) 4 0m ~ 1 50πιτογγ degree 60 ° C to 60 ° ~ 2 40 seconds Secondly, the gas component processing process will be described with reference to FIG. 6. Before processing, the inside of the processing container 26 is maintained at a high vacuum level of 5 X 1 0_6 To rr or less through the exhaust line 78, so that the surface of the wafer W carried into the processing container 26 can be prevented. Naturally oxidized paper This paper is sized according to the Chinese National Standard (CNS) A4 (210X297 mm)-23-490727 A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (21) I film The wafer W on the mounting table 40 is heated to a specified temperature by the heater 4 4 buried in the mounting table 1 1 40 (for example, 1 ° at 300 ° C range). At the same time, it is located on the wafer W. The ultraviolet radiation means 1 5 6 above the purple 1 1 outside line light 1 70, for example, the ultraviolet rays with a wavelength of 2 5 4 η m, please first 1: 1 UV transmission through ΙΙ, through the plate 1 6 0 and irradiate to the crystal Round W surface 〇 By the synergistic effect of heating and UV irradiation on the reader 1 4 4, BC 1 3 attached to the surface 1 of the wafer W surface Gas components such as ions, B ions, C: 1 ions are excited according to the order of 1 amount of high energy intention. This gas aa component is excited to an energy of more than 4% of the binding energy with the surface of the wafer W. j gas tiiSjL component That is, it will be detached from the surface of the wafer W and the page I will be attracted and exhausted by the exhaust system 7 8. During processing> The pressure in the processing vessel 2 6 1 1 I is maintained in the H 2 gas or N 2 gas atmosphere. 5 m-L 5 0 ιηΤ- 1 1 1 or r. If the pressure in the processing vessel is set to, for example, Η 2 gas] L 0 1 When mTo rr pressure is set, the removal efficiency of C 1 ions can be improved 1 1 and Oxidation prevention efficiency 0 The treatment time varies depending on the treatment temperature and the intensity of the UV 1 1 UV. The wavelength of the UV light is 2 5 4 η m when the intensity is 3 0 m W / 1 IC m 2. The 1 treatment time is set to, for example, 1 80 seconds £) K and this gas component removal processing chamber 1 2 during maintenance 1 1 plate 2 8 quotient processing container 2 6 In the removed state, just remove the screws 4 2 1 1 5 0. In this state, pull the unit mounting plate 3 8 upwards. # 1 I >> The joint unit 4 8 connected to the unit mounting plate 3 8 1 through the connecting rod 6 6 6 4 can also be pulled up together. At this time, of course, 1 1 pre-connected wiring 5 8 separate the heater power supply 6 0 and pull out the connector 1 I 5 2 〇 because the unit supporting the mounting table 40 is equipped with a plate 3 8 and the connector unit 1 I 4 8 can be — Take out in place 9 so it is easy to heat the gas 4 4 or load 1 1 1 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -24-Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 490727 A7 _________B7_ V. Description of the invention (M) Maintenance work on the unit 4 or the joint unit 48. Next, the oxide film removing process will be described with reference to FIG. 7. Prior to processing, the inside of the processing container 1 7 2 is maintained at a high vacuum level of 5 X 1 0_6 To rr or less through the exhaust line 1 7 9, so that wafers carried into the processing container 1 7 2 can be prevented. A natural oxide film is attached to the surface of W. The wafer W 'placed on the mounting table 1 8 2 is held on the mounting surface of the mounting table 1 8 by the Coulomb force generated by the electrostatic chuck 19 2. In this state, in order to form an aluminum film by C VD on the surface of the wafer W, the wafer W is heated to a specified operating temperature (eg, 200 ° C) by a resistance heating element 190, and DMAH gas is used. The chemical gas is introduced into the processing container 172 from the shower head 2 10 as a processing gas. The operating pressure at this time is set to about 2 Torr, for example. DMAH is supplied on a gas conversion basis to approximately loose CM. In the film formation process, a cooling medium 2 2 8 provided on a side wall of the processing container 17 2 has, for example, a refrigerant at a temperature of about 50 ° C. After the film-forming treatment ', the inside of the processing container 17 2 was evacuated to a pressure of 5 X 1 0-6 Torr. That is, the aluminum film after the film formation process is strongly suppressed to prevent the adhesion of the natural oxide film. Next, the cooling process of the wafer W will be described with reference to FIG. 8. Before the treatment, the inside of the processing container 2 4 6 is maintained at a high vacuum level of 5 X 1 0-6 Tori 'or less through the exhaust line 2 6 4, so that it can be prevented from being carried into the processing container 2 4 6 A natural oxide film is attached to the surface of the wafer w. Because the temperature of the wafer W after the film formation process is about 200 ° C, in the cooling processing chamber, the cooling jacket 2 500 installed in the cooling stage 2 4 8 flows in a refrigerant such as about 25 ° C. And the paper size on the cooling table 2 4 8 will apply the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Order #f -25-490727 A7 B7 5 2. Description of the invention (23) The wafer W placed at (23) is cooled to an operating temperature of about 50 ° C. In order to suppress the formation of a W oxide film on the wafer during processing, the pressure in the processing container 2 4 6 is maintained at, for example, about 1 Torr under an atmosphere of A *. As described above, the cluster-type processing apparatus 2 related to this embodiment includes not only the film-forming processing chambers 16 and 18 for forming an aluminum film on the wafer W, but also necessary pre-processing or post-processing during film-forming processing. A plurality of processing chambers 10, 12, 14, and 20 for processing are grouped together around the common transfer chamber 4 to form a unit. In other words, with this cluster processing device 2, the wafer W is not exposed to the atmosphere during processing, and the necessary processing for forming an aluminum film can be continuously performed, and an aluminum film with good quality and electrical characteristics can be formed on the wafer W . The cluster processing apparatus 2 according to the present embodiment is suitable for selectively forming an aluminum film because it has a gas component removal processing chamber 1 2 'for removing an etching gas component. In addition, the moisture removal processing chamber 10 and the gas component removal processing chamber 12 of the cluster-type processing apparatus 2 according to the present embodiment, the mounting unit 40 including the heater 44, and the joint unit 4 of the heater 44 are provided for processing. The container 26 is integrated and detachable. That is, the maintenance work of the moisture removal processing chamber 10 and the gas component removal processing chamber 12 can be performed quickly and easily. In addition, as shown in FIG. 7, the film forming processing chambers 16 and 18 of the cluster processing device 2 related to this embodiment are directly vaporized by directly vaporizing the film forming raw material 2 3 4 in a liquid state. Because an aluminum film is formed on the wafer W, a large amount of the processing gas can be supplied. In addition, the film forming processing chambers 16, 18 and this paper size are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). Please read the notes and notes before reading

頁 訂 經濟部中央標準局員工消費合作杜印製 -26 - 490727 A7 _______Β7_ 五、發明説明（24) 氧化膜除去處理室1 4藉由靜電卡盤而將晶圓保持於固定 的狀態進行處理，減少在處理中晶圓W的變形，晶圓W的 面內的溫度分布也有改善，提高成膜的均一性。也就是說 ，本實施例相關的叢集型處理裝置2，不僅2 0 0mm ( 8寸）直徑的晶圓W，連需要多量處理氣體且對於殘留應 力極爲要求的3 0 0mm _( 1 2寸）直徑的大直徑晶圓W 的成膜處理也可以容易進行。 又，於本實施例相關的叢集型處理裝置2，共通搬送 室4內經常維持5 X 1 0-6 To :rr以下的壓力，各處理室 10、12、14、16、18、20也在處理前後維持 內部壓力在5 X I 〇-6Torr以下。也就是說，在處理的全 部工程，都在防止晶圓W的表面附著自然氧化膜。 經濟部中央標準局員工消費合作杜印製 將處理室維持在5 X 1 0_6Torr以下的壓力可以防止 晶圓W表面附著自然氧化膜的證據資料如第9圖所示。第 9圖顯示處理室（真空室）內的壓力（基礎壓）與貫孔的 電阻值的關係。由此圖可知，基礎壓在5 X 1 Ο-6 To rr以 下，貫孔電阻質變得非常低。特別是考慮到處理室內的壓 力設定到基礎壓爲止所需要的抽真空時間以及形成自然氧 化膜的抑制效果的話，基礎壓設定爲約略1 X 1 〇 -6T〇rr 程度較佳。 然而，前述的各處理室之中，對於處理氣體有向外部 漏出的危險性的處理室，必須講求防止漏出氣體的安全對 策。防止氣體漏出的安全對策之一如第1 〇圖所示。如圖 所示，以B C 1 3氣體作爲處理氣體使用的氧化膜除去處 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 ~~ -27 - 經濟部中央標準局員工消費合作社印製 490727 A7 __B7 五、發明説明（25) 理室1 4與使用DMAH作爲處理氣體的第1及第2成膜 處理室1 6、1 8以及將BC 1 3氣體自晶圓W表面排除 的氣體成份除去處理室1 2，分別藉由氣密箱2 7 0而覆 蓋。各氣密箱2 7 0的構成均相同，因此僅舉一例，參照 第11圖而說明覆蓋氧化膜除去處理室14所覆蓋的氣密 箱270。如第1 1圖所示，氣密箱270係具有不讓處 理氣體洩漏出來的氣密性而將氧化膜除去處理室1 4包在 其內。爲使氣密箱2 7 0內全體均有氣流流動，氣密箱 2 7 0上設有對氣密箱2 7 0內導入清淨空氣的氣體導入 口 2 7 2，以及接續於工廠的排氣管且可以將氣密箱 2 7 0內的氣體向外排放的氣體排氣口 2 7 4。此構成可 以在萬一在氧化膜除去處理室14發生處理氣體外洩的場 合，藉由氣密箱2 7 0內所形成的氣流將處理氣體向工廠 排氣管側排出。 .因爲以往的叢集型處理裝置把複數的處理室全部放進 一個氣密箱內收容，氣密箱自身的容積變得非常大，藉由 工廠排氣管並無法發揮足夠的吸力，於最惡劣的場合處理 氣體有向操作者漏出的危險。但是如第1 0圖所示將處理 室以個別的氣密箱2 7 0來覆蓋的話，各氣密箱2 7 0的 容量變得非常小，僅藉由工廠排氣管的吸力即可將氣密箱 2 7 0內的氣體有效率地吸除，提高安全性。亦即，不僅 200mm(8寸）直徑的晶圓W，連需要多量處理氣體 的3 0 0mm ( 1 2寸）直徑的大直徑晶圓W的成膜處理 也可以容易進行。又，以往將複數的處理室收容於一個氣 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 28 - (請先閱讀背面之注意事項再本頁)Page Order Consumption Cooperation of Staff, Central Standards Bureau, Ministry of Economic Affairs Du Yin-26-490727 A7 _______ Β7_ V. Description of the Invention (24) Oxide film removal processing chamber 1 4 The wafer is held in a fixed state by electrostatic chucks for processing. The deformation of the wafer W during processing is reduced, and the in-plane temperature distribution of the wafer W is also improved, thereby improving the uniformity of film formation. That is to say, the cluster processing device 2 related to this embodiment not only has a wafer W with a diameter of 200 mm (8 inches), but also 300 mm (12 inches) which requires a large amount of processing gas and has extremely high requirements for residual stress. The film formation process for the large-diameter wafer W having a large diameter can be easily performed. Also, in the cluster processing apparatus 2 related to this embodiment, a pressure of 5 X 1 0-6 To: rr or less is always maintained in the common transfer chamber 4, and each of the processing chambers 10, 12, 14, 16, 18, and 20 is also maintained. Keep the internal pressure below 5 XI 0-6 Torr before and after the treatment. In other words, the natural oxide film is prevented from adhering to the surface of the wafer W during all processes. Printed by the Department of Economics, Central Bureau of Standards, Consumer Cooperative Printing. Maintaining the processing chamber at a pressure of 5 X 1 0_6 Torr or less can prevent evidence of natural oxide film from adhering to the surface of wafer W as shown in Figure 9. Figure 9 shows the relationship between the pressure (basic pressure) in the processing chamber (vacuum chamber) and the resistance value of the through hole. From this figure, it can be seen that the through-hole resistance becomes very low when the base pressure is below 5 X 1 0-6 To rr. In particular, in consideration of the evacuation time required to set the pressure in the processing chamber to the base pressure and the effect of suppressing the formation of a natural oxide film, it is better to set the base pressure to approximately 1 × 10-6 Torr. However, among the processing chambers described above, safety measures must be taken to prevent the leakage of processing gas from the processing chambers which may cause leakage of the processing gas to the outside. One of the safety measures to prevent gas leakage is shown in Figure 10. As shown in the figure, the oxide film removal site using BC 1 3 gas as the processing gas is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 1 ~~ -27-Staff Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs Printed 490727 A7 __B7 V. Description of the invention (25) The processing room 14 and the first and second film-forming processing rooms 16 and 18 using DMAH as the processing gas, and the BC 1 3 gas is excluded from the surface of the wafer W The gas component removal processing chambers 12 are covered by airtight boxes 2 70, respectively. Since each airtight box 270 has the same configuration, the airtight box 270 covered by the oxide film removal processing chamber 14 will be described with reference to FIG. 11 by way of example. As shown in Fig. 11, the airtight box 270 has airtightness so as not to allow the processing gas to leak out, and the oxide film removal processing chamber 14 is enclosed therein. In order to make the entire airtight box 270 have airflow, the airtight box 270 is provided with a gas introduction port 2 72 for introducing clean air into the airtight box 270, and the exhaust gas connected to the factory The gas exhaust port 2 7 4 which can discharge the gas in the airtight box 2 70 to the outside. This structure allows the process gas to be exhausted to the exhaust pipe side of the plant by the air flow formed in the airtight box 270 in the event of leakage of the process gas in the oxide film removal processing chamber 14. .Because the previous cluster-type processing device put all the processing chambers in one airtight box for storage, the volume of the airtight box itself became very large, and the factory exhaust pipe could not exert sufficient suction, which was the worst The process gas may leak to the operator. However, as shown in Fig. 10, if the processing chamber is covered with an individual airtight box 270, the capacity of each airtight box 270 becomes very small, and only by the suction of the factory exhaust pipe can be used The gas in the airtight box 270 is efficiently sucked out to improve safety. That is, not only a wafer W with a diameter of 200 mm (8 inches) but also a large-diameter wafer W with a diameter of 300 mm (12 inches) requiring a large amount of processing gas can be easily processed. Also, in the past, multiple processing chambers were housed in a single unit. The paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm). 1 28-(Please read the precautions on the back before this page)

訂 490727 A7 B7 五、發明説明（26) 密箱內的構造，在對叢集型處理裝置進行維修時，其他所 有的處理室的操作也必須完全終止。但是，如第1 〇圖所 示將處理室分別以氣密箱2 7 0包覆的話，僅需停止維修 對象的處理室即可，其他處理室還能夠維持工作狀態，可 以提高裝置的生產性。例如對第1成膜處理室1 6進行維 修的場合，僅需將此處理室1 6停機即可，還可以將第2 成膜處理室1 8維持在工作狀態。亦即，可以繼續進行晶 圓W的處理。 於前述實施例的叢集型處理裝置2，可以選擇性的生 成選擇式鋁膜或是地毯式鋁膜，但如第1 2圖所示的叢集 型處理裝置僅能進行地毯式鋁膜的生成。生成選擇式鋁膜 的場合，因爲氧化膜除去處理室1 4沒有使用B C 1 3氣 體，因此第1 2圖所示的叢集型處理裝置並未於氧化膜除 去處理室14設有氣密箱270，又，爲了除去BC13 氣體的氣體成份除去處理裝置12(參照第1圖）並未設 置。（又，其他的構成與叢集型處理裝置2相同）。第 1 2圖的叢集型處理裝置僅具有一個成膜處理室1 6，亦 可使其具有2個成膜處理室1 6、1 8。當然，爲了提高 生產率，亦可以使第1圖與第1 2圖的叢集型處理裝置具 有3個成膜處理室。 一般在進行鋁的成膜處理時，亦可使用如T i N或是 不需要前處理的T i C 14作爲底膜。亦即，第1及第2 成膜處理室1 6、1 8之任一方可以是先進行地毯式鋁成 膜處理，然後再使用與底下的基板相同材質的底膜（例如 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 請 先 閱 讀 背 & 之 注 意 項Order 490727 A7 B7 V. Description of the invention (26) When the cluster type processing unit is repaired in the structure of the confidential box, the operation of all other processing chambers must also be completely terminated. However, as shown in Fig. 10, if the processing chambers are respectively covered with airtight boxes 270, it is only necessary to stop the processing chamber of the maintenance target, and other processing chambers can maintain the working state, which can improve the productivity of the device. . For example, when performing maintenance on the first film-forming processing chamber 16, it is only necessary to shut down the processing chamber 16, and it is also possible to maintain the second film-forming processing chamber 18 in a working state. That is, the processing of the wafer W can be continued. In the cluster type processing device 2 of the foregoing embodiment, a selective aluminum film or a carpet type aluminum film can be selectively generated, but the cluster type processing device shown in FIG. 12 can only generate a carpet type aluminum film. When a selective aluminum film is produced, since the oxide film removal processing chamber 14 does not use BC 1 3 gas, the cluster processing device shown in FIG. 12 does not have an airtight box 270 in the oxide film removal processing chamber 14. In addition, the gas component removal processing device 12 (see FIG. 1) for removing the BC13 gas is not provided. (The other configuration is the same as that of the cluster processing device 2). The cluster-type processing apparatus shown in Figs. 12 and 12 has only one film-forming processing chamber 16 and may also have two film-forming processing chambers 16 and 18. Of course, in order to improve productivity, the cluster processing apparatus of FIGS. 1 and 12 may be provided with three film forming processing chambers. In general, when aluminum is formed into a film, for example, T i N or T i C 14 that does not require pre-treatment can be used as the base film. That is, one of the first and second film-forming processing chambers 16 and 18 may be a carpet-type aluminum film-forming treatment, and then use a base film of the same material as the underlying substrate (for example, this paper is applicable to China) National Standard (CNS) A4 specification (210X297 mm) Please read back & note first

頁 訂 經濟部中央標準局員工消費合作社印製 -29 - 490727 A7 ____ B7___ 五、發明説明（27) T i N膜或是T i膜）成膜於晶圓W的全面的處理室。藉 由CVD法形成T i N膜時，處理氣體使用TDEAT ( Tetarkis DiEthyl Amino Titanium) ' T D M A T ( Te-tarkis DiMethyl Amino Titanium) +H e 、 NH3M Η 等有機氣體（有機鈦化物）或者是 TiCl4+IPA( Iso-Propyl Alcohol) ' MM H (Mono-Methyle Hidora-zine) 、H2、NH3等無機氣體（無機鹵化物）。於此場 合成膜處理室1 6、1 8的另一方對於晶圓W以DMAH 形成鋁膜的場合，爲了讓成膜處理連續且良好地進行，以 使用無機氣體（無機鹵化物）爲佳。這是因爲鋁原子的親 電子性大，T i N中的不純物（含有率約〇 . 1〜3%) 之鹵原子保有多數的電子，可以加速CVD初期的核形成 過程，而可以生成均一的鋁膜。第1圖及第1 2圖的叢集 型處理裝置，因爲處理室前後均維持5 X 1 0—6Tori*程度 以下的壓力，所以即使具有形成底膜用的處理室，也不爲 使形成底膜的晶圓W暴露於大氣，又，底膜不會附著大氣 中的水分或是氧化膜，而在形成有底膜的晶圓W上形成鋁 膜。 前述實施例的叢集型處理裝置2雖僅舉例說明其於晶 圓W形成鋁膜，藉由變更成膜處理室的形態，亦可於晶圓 W上形成其他金屬膜（例如τ i 、. T i N、W、C u )。 亦即’第13圖所示之叢集型處理裝置2/在共通搬送室 4的周圍，配置有例如2個冷卻處理室2 0，及2個卡匣 室6、8，與4個成膜處理室F (又，此外其他的構成與 本紙張尺度適用中國國家榡準（CNS ) A4規格（210X297公釐） 一 30 - 閱 讀 背 & 之 注 意 事 項 再 頁 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 490727 A7 __B7 五、發明説明（28) 叢集型處理裝置2相同）。4個成膜處理室F可以全部是 在晶圓W上生成T i N膜的T i N成膜室，亦可以2個是 T i成膜室，剩下的2個是T i N成膜室。 又，前述實施例的叢集型處理裝置，不僅能夠進行晶 圓W的成膜處理’當然對於其他的被處理物體，例如 L C D基板或是玻璃基板的成膜處理亦能適用。 第14圖〜第16圖，顯示第6圖之氣體成份除去處 理裝置12的變形例。 如第14圖所示，變形例之氣體成份除去處理裝置 1 2 ~其特徵在於紫外線照射手段1 5 6，其他的構成與 第6圖所示之氣體成份除去處理裝置1 2相同，對於同一 符號的說明予以省略。 如第1 5圖及第1 6圖所示，燈箱1 6 2內設有2盞 紫外線燈1 7 0，1 7 0。爲了以少數的紫外線燈（亦即 於本實施例的場合爲2盞）170照射到晶圓W的全面， 各紫外線燈1 7 0以蛇行狀3次折曲而成彎曲狀。各紫外 線燈的基部1 7 0A藉由燈具收容箱1 6 2內橫掛的燈具 安裝板3 0 2而被固定安裝。紫外線燈1 7 0所放出之紫 外線UV的波長，設定爲對氣體成份（特別是氯離子）最能 夠激發的周波數，例如254 rim程度。 各紫外線燈1 7 0，1 7 0的上方以及側方設有將其 包覆狀的鋁製反射鏡3 0 4。反射鏡3 0 4裝設固定於燈 具收容箱1 6 2的內壁面延伸出來的支撐片3 0 6上，由 紫外線燈1 7 〇發出之紫外線由上方及側方的反射鏡反射 本紙張尺度適用中國國家標準（CNS ) M規格（2ΐ〇χ297公釐） — -31 - (請先閱讀背面之注意事項再^^本頁)Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs -29-490727 A7 ____ B7___ V. Description of the Invention (27) T i N film or T i film) is formed in the comprehensive processing room of wafer W. When forming a T i N film by CVD, use TDEAT (Tetarkis DiEthyl Amino Titanium) 'TDMAT (Te-tarkis DiMethyl Amino Titanium) + H e, NH3M Η and other organic gases (organic titanium compounds) or TiCl4 + IPA (Iso-Propyl Alcohol) 'MM H (Mono-Methyle Hidora-zine), H2, NH3 and other inorganic gases (inorganic halides). In this case, when the other of the synthetic film processing chambers 16 and 18 forms an aluminum film on the wafer W with DMAH, it is preferable to use an inorganic gas (inorganic halide) in order to continuously and favorably perform the film forming process. This is because the aluminum atoms have a large electrophilicity, and the impurities in the T i N (containing a content of about 0.1 to 3%) of the halogen atoms hold a large number of electrons, which can accelerate the nucleation process in the initial stage of CVD and generate uniform Aluminum film. The cluster processing apparatus of FIGS. 1 and 12 has a pressure of 5 X 1 0-6 Tori * before and after the processing chamber, so even if the processing chamber for forming the base film is provided, it is not necessary to form the base film. The wafer W is exposed to the atmosphere, and the bottom film does not adhere to moisture or an oxide film in the atmosphere, and an aluminum film is formed on the wafer W on which the bottom film is formed. Although the cluster processing device 2 of the foregoing embodiment only illustrates that it forms an aluminum film on the wafer W, by changing the form of the film-forming processing chamber, other metal films (for example, τ i,. T i N, W, Cu)). That is, the cluster type processing device 2 shown in FIG. 13 is arranged around the common transfer chamber 4, for example, two cooling processing chambers 20, two cassette chambers 6 and 8, and four film forming processes. Room F (Furthermore, the other components and the paper size are subject to China National Standards (CNS) A4 specifications (210X297 mm). 30-Read the note & reprint. Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs.) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 490727 A7 __B7 V. Description of the invention (28) The cluster processing device 2 is the same). The four film-forming processing chambers F may all be T i N film-forming chambers that generate T i N films on the wafer W, or two may be T i film-forming chambers, and the remaining two are T i N film-forming chambers. room. In addition, the cluster-type processing apparatus of the foregoing embodiment can not only perform the film-forming process of the wafer W ', but it can also be applied to the film-forming process of other objects to be processed, such as an LCD substrate or a glass substrate. 14 to 16 show modified examples of the gas component removal processing device 12 of Fig. 6. As shown in FIG. 14, the gas component removal processing device 12 according to the modification is characterized by ultraviolet irradiation means 1 5 6 and other structures are the same as those of the gas component removal processing device 12 shown in FIG. 6. The description is omitted. As shown in Fig. 15 and Fig. 16, there are two ultraviolet lamps 170 and 170 in the light box 16.2. In order to irradiate the entire surface of the wafer W with a small number of ultraviolet lamps 170 (that is, two in the case of this embodiment) 170, each of the ultraviolet lamps 170 is bent in a meandering shape three times and bent. The base 1700A of each UV lamp is fixedly mounted by a lamp mounting plate 3202 mounted horizontally in the lamp housing box 16.2. The wavelength of the ultraviolet UV emitted by the ultraviolet lamp 170 is set to the number of cycles that can excite gas components (especially chloride ions), such as 254 rim. Each of the ultraviolet lamps 170 and 170 is provided with an aluminum reflecting mirror 3 04 covering the sides and sides. Reflector 3 0 4 is installed and fixed on the supporting sheet 3 6 extending from the inner wall surface of the lamp housing box 16 2. The ultraviolet rays emitted by the ultraviolet lamp 1 7 are reflected by the upper and side mirrors. Chinese National Standard (CNS) M specification (2 × 〇χ297 mm) — -31-(Please read the precautions on the back before ^^ this page)

、1T 490727 ___^_ B7__ 五、發明説明（29) 而照向晶圓W。燈具收容箱1 6 2的頂部設有藉由旋轉馬 達3 0 8驅動的複數的冷卻風扇3 1 0。爲了將內部被加 熱的空氣排出，於收容箱1 6 2的側壁設有通氣孔3 1 2 。使冷卻風扇3 1 0旋轉而使內部被加熱的空氣由通氣孔 3 1 2排出的話，可以冷卻紫外線燈1 7 0。1T 490727 ___ ^ _ B7__ V. Description of the invention (29) and shine on the wafer W. A plurality of cooling fans 3 1 0 driven by a rotating motor 3 0 8 are provided on the top of the lamp storage box 16 2. In order to exhaust the heated air inside, a ventilation hole 3 1 2 is provided on the side wall of the storage box 16 2. If the cooling fan 3 1 0 is rotated and the heated air inside is exhausted through the vent holes 3 1 2, the ultraviolet lamp 1 7 can be cooled.

訂 燈具裝設片3 0 2上設有可以檢測出由各燈1 7 0所 發出的紫外線的強度的紫外線檢測器3 1 4。檢測器 3 1 4的檢測值被輸入至例如由微電腦所構成的判定部 3 1 6。於判定部3 1 6將檢測值與預設值相比較，而判 定燈1 7 0的良否。爲了讓判定部的判定結果能夠通知操 作者，於判定部3 1 6接續有例如顯示器所構成之告知手 段3 1 7。爲了能夠個別檢測出燈1 7 0的紫外線強度， 紫外線檢測器3 1 4是對應紫外線燈1 7 0的數目而設置 的。紫外線燈使用例如輸入電源爲周波數50Hz ， 經濟部中央標準局員工消費合作社印製 10 0V/2 · 5A，光強度在30mW/cm2程度的 燈。爲了有效率地除去氣體成份。晶圓的加熱溫度以 1 5 0°C〜3 0 0 °C爲佳。紫外線的強度最好在2 OmW /cm2〜5 OmW/cm2的範圍內，太弱的話氣體成份 無法完全分離，太強又會產生破壞電晶體的問題。 於上述的構成，紫外線燈1 7 0往上方及側方照射的 紫外線經由反射鏡3 0 4而反射，照向晶圓W的表面側。 亦即，維持高照射效率。由個別燈具1 7 0所放出的紫外 線UV的強度，藉由分別對應設置的紫外線檢測器3 1 4而 檢測出。此檢測值經由判定部3 1 6而與指定的基準值相 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） 490727 ____B7 五、發明説明（30) 比較。於判定部3 1 6判定檢測值較基準值爲小時，藉由 告知手段3 1 7顯示其內容，而通知操作者。亦即，操作 者藉此得知，而可以將因老化而減少紫外線發光量的紫外 線燈交換。而能夠經常保持發出一定量以上紫外線，不僅 能夠確保晶圓W間處理的均一性，還可以避免因紫外線不 足而導致氣體成份未完全除去的可能，使晶圓W表面的氣 體成份除去能夠落實。又，告知手段3 1 7於此處使用的 是顯示幕，但也可以使用任何操作者可以認知的手段，例 如燈泡的點滅或是警報蜂鳴器等藉助視覺或是聽覺的手段 請 先 閱 讀 背 * 之 注 意 事 項 再 t 經濟部中央標準局員工消費合作社印製 第 第1 7 爲強。 射。爲 17 0 線半透 的紫外 均一強 濾光器 的直徑 W表面 1 4圖〜第 圖A所示， 亦即，晶圓 防止此種情 的下方中心 過材所製的 線強度稍微 度的紫外線 手段4 0 0 以及燈光的 各處均能保 1 6圖所示之紫外線燈1 7 0，一般如 燈1 7 0的中心部紫外線強度較周邊部 W的中心側會受到較高紫外線光量的照 形，如第1 7圖B所示，紫外線燈 部設有直徑較晶圓W直徑爲小的由紫外 濾光器手段4 0 0，將晶圓W的中心部 抑制，其結果使得晶圓W面內照射約略 ，提高晶圓W的面內處理的均一性。此 的直徑及厚度依存於所需處理的晶圓W 強度，而設定爲使紫外線的分布在晶圓 持約略同一值而設定其適性值。 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -33 -The lamp installation sheet 3 02 is provided with an ultraviolet detector 3 1 4 which can detect the intensity of ultraviolet rays emitted from each lamp 170. The detection value of the detector 3 1 4 is input to a determination unit 3 1 6 composed of, for example, a microcomputer. The determination unit 3 16 compares the detection value with a preset value, and determines whether the lamp 170 is good or not. In order to inform the operator of the determination result of the determination section, the determination section 3 1 6 is followed by a notification means 3 1 7 composed of, for example, a display. In order to be able to detect the ultraviolet intensity of the lamp 170 individually, the ultraviolet detector 3 1 4 is provided corresponding to the number of the ultraviolet lamp 170. The UV lamp uses, for example, an input power source with a frequency of 50 Hz and a lamp printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs at 100 V / 2 · 5 A with a light intensity of about 30 mW / cm2. For efficient removal of gas components. The heating temperature of the wafer is preferably 150 ° C to 300 ° C. The intensity of ultraviolet light is preferably in the range of 2 OmW / cm2 to 5 OmW / cm2. If it is too weak, the gas components cannot be completely separated, and if it is too strong, it will cause the problem of destroying the transistor. With the above configuration, the ultraviolet rays irradiated upwardly and laterally by the ultraviolet lamp 170 are reflected by the reflecting mirror 304, and are irradiated to the surface side of the wafer W. That is, high irradiation efficiency is maintained. The intensity of the ultraviolet rays emitted by the individual lamps 170 is detected by the corresponding ultraviolet detectors 3 1 4. This detection value is compared with the specified reference value through the judgment unit 3 1 6 The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X297 mm) 490727 ____B7 V. Description of the invention (30). The determination unit 3 16 determines that the detection value is smaller than the reference value, and the notification means 3 1 7 displays the content to notify the operator. That is, the operator knows that it is possible to exchange an ultraviolet lamp which reduces the amount of ultraviolet light emitted due to aging. The ability to constantly emit more than a certain amount of ultraviolet light not only ensures the uniformity of processing between wafers W, but also avoids the possibility of incomplete removal of gas components due to insufficient ultraviolet rays, and enables the removal of gas components on the surface of wafer W. In addition, the notification means 3 1 7 uses a display screen here, but it can also use any means that the operator can recognize, such as turning off the light bulb or alarm buzzer, etc. Please read first The note on the back * is the 17th printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Shoot. The diameter of the UV uniform light filter with a transmissive line of 17 0 is shown in Figures 4 to A. That is, the wafer is protected from ultraviolet rays with a slightly stronger line intensity. Means 4 0 0 and all parts of the light can protect the UV lamp 1 70 shown in the figure. Generally, the intensity of the ultraviolet light at the center of the lamp 1 70 is higher than that at the center of the peripheral W. As shown in FIG. 17B, the ultraviolet lamp portion is provided with a diameter smaller than the diameter of the wafer W by the ultraviolet filter means 400 to suppress the center portion of the wafer W. As a result, the wafer W The in-plane irradiation is approximately the same, and the uniformity of the in-plane processing of the wafer W is improved. The diameter and thickness depend on the strength of the wafer W to be processed, and are set to make the distribution of ultraviolet rays approximately the same value on the wafer and set its appropriate value. The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) -33-

Claims (1)

490727 A8 BS cs 1)8 經濟部智慧財產局員工消費合作社印製 、申請專利範圍 附件ΙΑ : ‘—^ 第85116148號專利申請案 中文申請專利範圍修正本 民國 1 · 一種叢集型處理裝，置，其特徵爲， 將對象物搬進搬出的搬送室；及 與搬送室連接而可以連通、具有將對象 手段’由加熱手段將對象物加熱而除去對象 水分的水分除去處理室；及 與搬送室連接而可以連通、藉由蝕刻氣 表面所附著的自然氧化膜除去之氧化膜除去 與搬送室連接而可以連通、供在對象物 膜的成膜處理室；及 與搬送室連接而可以連通、把成膜處理 加以冷卻的冷卻處理室； 其中，具有：與搬送室連接而可以連通 氧化膜除去處理室所使用的蝕刻氣體成份的 處理室。 2·如申請專利範圍第1項之叢集型處 ，氣體成份除去處理室具有：將對象物加熱 及以紫外繳照射而將前述蝕刻氣體成份激發 手段。 3.如申請專利範圍第2項之叢集型處 ，氣體成份除去處理室具有：可以抽真空的 w Τ7 89年8月修正 具有： 物加熱的加熱 物表面附著的 體而將對象物 處理室；及 的表面形成鋁 之後的對象物 、可以除去在 氣體成份除去 理裝置，其中 之加熱手段， 的紫外線照射 理裝置，其中 處理容器，及 (請先閱讀背面之注意事項再填寫本頁) · --線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -1 - 490727 A8 B8 C8 1)8 六、曱請專利範圍 設有載置藉由加熱手段加熱的對象物的載置面的載置台， 及具有通電給加熱手段用的接頭單元；其中，載置台與接 頭單元成爲一體可以自處理容器取出。 4 ·如申請專利範圍第2項之叢集型處理裝置，其中 ’紫外線照射手段具有彎曲成形的紫外線燈。 5 ·如申請專利範圍第2項之叢集型處理裝置，其中 ’具有：檢測出由紫外線照射手段所照射的紫外線的強度 的紫外線檢測手段，及當藉由紫外線檢測手段測得的檢測 值在基準值以下時告知操作者用的告知手段。 6 ·如申請專利範圍第2項之叢集型處理裝置，其中 ，紫外線發生手段具有調整發生的紫外線光量的濾光器， 藉此濾光器可使受紫外線照射的對象物的全體照射面的紫 外線量均一化。 7 ·如申請專利範圍第1項之叢集型處理裝置，其中 ，水分除去處理室具有：處理容器，及設有載置藉由加熱 手段加熱的對象物的載置面的載置台，及具有通電給加熱 手段用的接頭單元；其中，載置台與接頭單元成爲一體可 以自處理容器取出。 | 8 ·如申請專利範圍第1項之叢集型處理裝置，其中 ，具有包覆在氧化膜除去處理室的周圍將氧化膜除去處理 室與外部氣_密遮斷，且可以將由氧化膜除去處理室漏出的 氣體向外部排氣的第1氣密手段。 9 ·如申請專利範圍第8項之叢集型處理裝置，其中 ，具有包覆在成膜處理室的周圍將成膜處理室與外部氣密 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） irlr J-------¾ (請先閱讀背面之注意事項再填寫本頁) 訂---------線- 經濟部智慧財產局員工消費合作社印製 一 2 _ 490727 A8 B8 CS 1)8 經濟部智慧財產局員工消費合作社印製 、申請專利範圍 遮斷，且可以將由成膜處理室漏出 2氣密手段。 1 0 ·如申請專利範圍第1項 中，具有包覆在氣體成份除去處理 去處理室與外部氣密遮斷，且可以 室漏出·的氣體向外部排氣的第2氣 1 1 · 一種叢集型處理裝置， 象物搬進搬出的搬送室；及 與搬送室連接而可以連通 鋁膜的成膜處理室；及 與搬送室連接而可以連通 施以指定的後處理的後處理室 分別將搬送室與成膜處理室與 定爲5 X 1 0 -6Τοι*ι·以下的手段 1 2 ·如申請專利範圍第1 1 其中，具備有冷卻形成對象物鋁膜 13. —種叢集型處理裝置， 將對象物搬進搬出的搬送室； 與搬送室連接而可以連通、具 手段，由加熱手段將對象物加熱而 水分的水分除去處理室；及 與搬送室連接而可以連通、藉 表面所附著的自然氧化膜除去之氧 與搬送室連接而可以連通、供 的氣體向外部排氣的第 之叢集型處理裝置，其 室的周圍將氣體成份除 將由氣體成份除去處理 密手段。 ，其特徵爲，具有：將對 可以於對象物的表面形成 對於形成鋁膜後的對象物 及 後處理室內部的壓力設 項之叢集型處理裝置， 的對象物的手段。 其特徵爲，具有： 及 有將對象物加熱的加熱 除去對象物表面附著的 由蝕刻氣體而將對象物 化膜除去處理室；及 在對象物的表面形成鋁 2、 3 背. 面 頁i 訂 線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 一 3 - 490727 A8 B8 C8 1)8 六、申請專利範圍 膜的成膜處理室；及 與搬送室連接而可以連通、把成膜處理之後的對象物 加以冷卻的冷卻處理室；及 (請先閱讀背面之注意事項再填寫本頁) 與搬送室連接而可以連通、將氧化膜除去處理室所使 用的蝕刻氣體成份除去的氣體成份除去處理室；及 分別將前述搬送室與前述各處理室全部設定爲壓力在 5 X 1 0 _6T〇rr以下的手段。 14·一種在對象物上形成鋁膜的成膜方法，其特徵 爲：於設定於5x10 -6T〇rr以下之壓力的氧化膜除去處 理室，將附著於對象物之表面的自然氧化膜經由蝕刻氣體 加以除去，於設定於5x10 _6 Torr以下之壓力的氣體成 分除去處理室，除去前述蝕刻氣體之成分，之後將對象物 搬進壓力設定在5 X 1 0_6Torr以下的成膜處理室內；於 成膜處理室內形成鋁膜；在對象物上形成鋁膜後，將成膜 處理室內部的壓力設定爲5 X 1 0_6Torr以下。 經濟部智慧財產局員工消費合作社印製 15.—種在對象物上形成鋁膜的成膜方法，其特徵 爲：將對象物搬進壓力設定在5 X 1 0_6 Tor r以下的成膜 處理室內；於成膜處理室內形成鋁膜；在對象物上形成鋁 膜後，將成膜處理室內部的壓力設定爲5 X 1 0-e To rr以 下；在5 x 1 0_6T〇rr以下的壓力對形成鋁膜之對象物施 以後處理。' 16·—種在對象物上形成鋁膜的成膜方法，其特徵 爲：在5 X 1 0-6 To rr以下的壓力蓐了使對象物之表面 成膜而施以前處理；將對象物搬進壓力設定在5 X 1 0 一6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) -4 - 490727 A8 B8 CS 1)8 六、申請專利範圍 Tori*以下的成膜處理室內；於成膜處理室內形成鋁膜；在 對象物上形成鋁膜後，將成膜處理室內部的壓力設定爲5 X 1 0-6Torr以下；在5 X 1 〇-6Torr以下的壓力對形成 鋁膜之對象物施以後處理。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印划衣 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -5 -490727 A8 BS cs 1) 8 Appendix IA printed and applied for patent scope by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: '— ^ No. 85116148 Patent Application Chinese Application for Patent Scope Amendment The Republic of China1 · A cluster processing device, device, It is characterized by a transfer room that carries an object in and out; and a moisture removal processing room that is connected to the transfer room and can communicate with each other, and has a means for heating the target by heating means to remove the target moisture; and is connected to the transfer room The film formation processing chamber which can communicate with the transfer chamber through the removal of the oxide film removed from the natural oxide film attached to the surface of the etching gas, and the film formation processing chamber which can communicate with the object film; A cooling processing chamber for cooling the film processing; and a processing chamber connected to the transfer chamber and communicating with the etching gas component used in the oxide film removal processing chamber. 2. According to the cluster type section of the scope of the patent application, the gas component removal processing chamber has a means for heating the object and irradiating it with ultraviolet rays to excite the aforementioned etching gas component. 3. If the cluster type of the scope of the patent application is No. 2, the gas component removal processing chamber has: w TT7 which can be evacuated. In August 89, it was amended to have: the object heated by the object attached to the surface of the object to be heated; Objects formed on the surface of aluminum can be removed in the gas component removal device, the heating means, the ultraviolet irradiation treatment device, the processing container, and (please read the precautions on the back before filling this page) ·- -Line · This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -1-490727 A8 B8 C8 1) 8 6. Please apply for the scope of the patent to place objects heated by heating means The mounting table on the mounting surface has a joint unit for applying electricity to the heating means; wherein the mounting table and the joint unit are integrated and can be taken out from the processing container. 4 · The cluster type processing device according to item 2 of the patent application range, wherein the 'ultraviolet irradiation means has a bent ultraviolet lamp. 5 · The cluster type processing device according to item 2 of the patent application scope, wherein 'has: an ultraviolet detection means that detects the intensity of ultraviolet rays irradiated by the ultraviolet irradiation means, and when the detection value measured by the ultraviolet detection means is in the reference When the value is less than the value, the operator is notified. 6 · The cluster processing device according to item 2 of the patent application, wherein the ultraviolet generation means has a filter for adjusting the amount of generated ultraviolet light, whereby the filter can cause ultraviolet rays on the entire irradiation surface of the object to be irradiated with ultraviolet rays. The amount is uniform. 7. The cluster type processing device according to item 1 of the scope of patent application, wherein the moisture removal processing chamber includes a processing container, a mounting table provided with a mounting surface on which an object heated by heating means is mounted, and a power supply A joint unit for heating means; wherein the mounting table and the joint unit are integrated and can be taken out of the processing container. 8 · The cluster-type processing device according to item 1 of the scope of patent application, wherein the device has a coating surrounding the oxide film removing processing chamber to block the oxide film removing processing chamber from the outside air tightly, and the oxide film removing processing can be performed. The first air-tight means for exhausting gas leaked from the chamber to the outside. 9 · The cluster type processing device according to item 8 of the scope of patent application, which has a film-forming processing chamber and an external air-tightness which are wrapped around the film-forming processing chamber. The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) irlr J ------- ¾ (Please read the notes on the back before filling out this page) Order --------- Line-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A 2 _ 490727 A8 B8 CS 1) 8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the patent application scope is blocked, and 2 airtight means can be leaked from the film forming processing room. 1 0 · As in item 1 of the scope of the patent application, there is a second gas 1 1 that has a gas coating that is covered by the gas component removal treatment to remove the processing chamber from the outside and can be leaked to the outside. 1 1 · A cluster Type processing device, which transfers objects into and out of the transfer room; film-forming processing rooms that are connected to the transfer room and can communicate with the aluminum film; and post-processing rooms that are connected to the transfer room and can communicate with the specified post-processing to carry the transfer Chamber and film-forming processing chamber and means 5 X 1 0 -6 Tο * ·· 1 2 · If the scope of the patent application is 1 1 Among them, there is an aluminum film for cooling the formation object 13.-Cluster processing device, A transfer room that carries an object into and out of it; a moisture-removal treatment room that is connected to the transfer room so that it can communicate and is heated by heating means; and a connection that is connected to the transfer room and can be attached to the surface The first cluster-type processing device for the oxygen removed by the natural oxide film is connected to the transfer chamber and can supply and exhaust the gas to the outside. The gas component is removed and processed by the gas component around the chamber. Means. It is characterized in that it has a means for forming a cluster-type processing device that can be formed on the surface of the object, the object after forming the aluminum film, and the pressure setting inside the post-processing chamber. It is characterized by having: and a heating chamber that removes the object from the surface of the object by heating to remove the object by an etching gas, and a processing chamber for removing the object film; and forms aluminum 2 and 3 on the surface of the object. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 1-490727 A8 B8 C8 1) 8 6. Film-forming processing chamber for patent application film; and it can be connected to the transporting chamber, Cooling processing chamber that cools objects after film formation; and (Please read the precautions on the back before filling out this page) Connected to the transfer chamber to connect and remove the etching gas components used in the oxide film removal processing chamber A gas component removal processing chamber; and means for setting the transfer chamber and each of the processing chambers to a pressure of 5 X 10 to 6 Torr or less, respectively. 14. A method of forming an aluminum film on an object, characterized in that an oxide film removal processing chamber set at a pressure of 5x10 -6 Torr or lower is used to etch a natural oxide film attached to the surface of the object through etching. Remove the gas, and remove the components of the etching gas in a gas component removal processing chamber set at a pressure of 5x10 _6 Torr or less, and then move the object into the film formation processing chamber whose pressure is set below 5 X 1 0_6 Torr; An aluminum film is formed in the processing chamber; after the aluminum film is formed on the object, the pressure inside the film-forming processing chamber is set to 5 X 1 0_6 Torr or less. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 15. A film forming method for forming an aluminum film on an object, which is characterized in that the object is moved into a film forming processing chamber with a pressure set below 5 X 1 0_6 Tor r ; Forming an aluminum film in the film forming processing chamber; after forming the aluminum film on the object, set the pressure inside the film forming processing chamber to 5 X 1 0-e To rr or less; The object forming the aluminum film is subjected to post-treatment. '16 · —A film forming method for forming an aluminum film on an object, which is characterized in that the surface of the object is formed into a film under a pressure of 5 X 1 0-6 To rr or more and pre-treatment is performed; The loading pressure is set to 5 X 1 0-6 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male f) -4-490727 A8 B8 CS 1) 8 Sixth, the patent application scope below Tori * In the film processing chamber; to form an aluminum film in the film-forming processing chamber; after forming an aluminum film on the object, set the pressure inside the film-forming processing chamber to 5 X 1 0-6 Torr or less; and the pressure at 5 X 1 0-6 Torr or less Post-treatment is performed on the object forming the aluminum film. (Please read the precautions on the back before filling out this page) Printing and dressing for employees ’cooperatives in the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies Chinese National Standard (CNS) A4 (210 x 297 mm) -5-