TW490361B

TW490361B - Optical endpoint detection system for chemical mechanical polishing

Info

Publication number: TW490361B
Application number: TW90104116A
Authority: TW
Inventors: Gregory A Olsen; Mark A Meloni; John M Garcia; Matthew S Weldon
Original assignee: Speedfam Ipec Corp
Priority date: 2000-02-25
Filing date: 2001-02-23
Publication date: 2002-06-11
Also published as: WO2001063201A3; WO2001063201A2

Abstract

An apparatus for monitoring the thickness of a film on a substrate includes a housing having a first end and a second end with a well at the first end. The housing also has a bore which extends through the housing to the well, and a fluid channel which is in fluid communication with the well. The apparatus also includes an optical detector assembly positioned within the bore to optically detect a substrate being polished. The apparatus may further include a fluid discharge canal having a first end in fluid communication with the well and extending from the well to a surface of the housing.

Description

0361 五、發明說明（1) 發明領域本發明一般係關於化學機械拋光裝置，尤指光學末端點檢測技術。本發明提供光學末端點檢測裝置，避免造成末端點誤差。相關申請案之复^參照本案請求2000年2月25日所提出第60/1 84, 884號美國臨時申請案之權益。 ' 背景技術半導體元件之生產，開始產生高品質半導體晶圓。由於此等半導體元件之生產，需要高度精密，一般在半導體晶圓之至少一側需要極平坦的表面，以確保在晶圓表面所產生微電子結構之適當準確性和效能。化學機械式平整 (CMP)常用來從晶圓或工件表面除去材料，以提供較平坦表面0 — 此種抛光為技藝上所公知與平坦拋光表面接觸，並使工。漿液（含有磨粒和/或可與溶化材料之化學劑）亦可置於一部份材料。在拋光或平整過件載體保持，壓緊轉動中的拋效果’工件亦可轉動，並在拋在平整過程中，需要收集可用來使平整過程達最佳，或 (稱為末端點）。一般末端點檢 ---IT- 周件和拋光表面彼此相對運動工件表面上的材料反應，以與工件表面接觸，以助除去，中，工件典型上是利用工 f f片。此外，為改進抛光光表面上方前後擺動。 21面狀、况之資料。資料 i疋7整過程何時應終止潢D)系統以原位系統為0361 V. Description of the invention (1) Field of the invention The present invention relates generally to chemical mechanical polishing devices, especially optical end point detection technology. The present invention provides an optical end point detection device to avoid causing end point errors. For a reply to the related application, please refer to this application for the benefit of US Provisional Application No. 60/1 84, 884, filed on February 25, 2000. '' BACKGROUND The production of semiconductor components begins to produce high-quality semiconductor wafers. Because the production of these semiconductor components requires high precision, generally a very flat surface is required on at least one side of the semiconductor wafer to ensure the appropriate accuracy and efficiency of the microelectronic structure produced on the wafer surface. Chemical mechanical planarization (CMP) is commonly used to remove material from the surface of a wafer or workpiece to provide a flatter surface. This polishing is known in the art to contact and polish a flat polished surface. Slurries (chemicals containing abrasive particles and / or solvents) can also be placed on a portion of the material. During polishing or leveling, the workpiece carrier is held, and the throwing effect during pressing and turning is also possible. The workpiece can also be turned during the smoothing process, or it can be used to optimize the smoothing process, or (referred to as the end point). General end-point inspection --- IT- The workpiece and the polishing surface move relative to each other. The material on the workpiece surface reacts to contact the surface of the workpiece to help remove it. In general, the workpiece is typically made of f f sheets. In addition, to improve the polished back and forth swinging above the polished surface. 21 surface and condition information. Information i 疋 7 When the whole process should be terminated D) The system uses the in-situ system as the

HH Ύν m I / 1 HH Ύν m I / 1 已提議過許多原位EPD系 ’而在例行生產使用上更佳，可在拋光過程中提供監察。，，但在製造環境方面很少成功少充分堅固者。的雷玄、阻h ΐ j位EPD技術，涉及電氣測量晶圓上層膜計電係數之變化，並根據此資料之分析： in。⑨今，&等對epd的特殊基於電氣措施，在商業上不可行。度和組成份之固有製程變化，意指最後末端點觸發明間比所需更不準確。業已證明有生產價值的的晶圓與拖光塾片間之摩擦轉動馬達驅動電流的變化為即測得的信號存取整個晶圓有關局部區域之特殊資料。業最佳’因為抛光塾片與鎢拋光墊片與金屬下方介質間步的相連導體，諸如銅（cu) 化钽’其摩擦係數與底層介測銅一氮化组過渡，再加過另一電氣措施，是探測受拋光變化。此項測量係以探測晶圓之。此等系統使用全面策略，表面。因此，此等系統得不到此外，此法對鎢CMP用的EPD作一氮化鈦一鈦膜堆間，相較於之摩擦係數不同。然而，以進，相關阻體金屬，例如钽或氮質類似。馬達電流策略有賴檢度拋光時間。剩餘膜堆層的厚另一組方法疋使用聲波策略。在第一種聲波策略中，聲波轉換器發生聲波信號’傳播過受到抛光的晶圓表面層。在層間的界面會發生一些反射，而檢測反射信號所定位之感測器’可用來決定最頂層被拋光時的厚度。在第二種聲波策略中，使用聲波感測器檢測在CMP之際發生的聲波HH Ύν m I / 1 HH Ύν m I / 1 Many in-situ EPD systems have been proposed and are better for routine production use, which can provide supervision during the polishing process. , But rarely successful in manufacturing environments. Less fully sturdy. The Lei Xuan and resistance h ΐ j-bit EPD technology involves electrically measuring the change of the electrical coefficient of the upper film of the wafer, and based on the analysis of this data: in. Today, & 's special electrical measures based on epd are not commercially viable. The inherent process variation of degree and composition means that the final touch of the invention is more inaccurate than required. The friction between the wafer that has been proved to be of production value and the glazing cymbal changes the driving current of the rotating motor as a measured signal that accesses special information about the local area of the entire wafer. The industry's best 'because the polished cymbals and tungsten polishing pads are connected to the conductor under the metal, such as copper (cu) tantalum', its friction coefficient and the underlying dielectric copper-nitride group transition, and then another Electrical measures are to detect changes in polishing. This measurement is made to detect wafers. These systems use a comprehensive strategy, superficial. Therefore, these systems are not available. In addition, this method has different friction coefficients for the EPD used for tungsten CMP as the titanium nitride and titanium film stacks. However, advances in related resistor metals, such as tantalum or nitrogen, are similar. The motor current strategy relies on checking the polishing time. Thickness of Remaining Membrane Stacks Another set of methods uses sonic strategies. In the first sonic strategy, the sonic converter ’s sonic signal ’propagates through the polished surface layer of the wafer. Some reflections will occur at the interface between the layers, and the sensor 'positioned to detect the reflected signal can be used to determine the thickness of the top layer when it is polished. In the second sonic strategy, sonic sensors are used to detect sound waves that occur during CMP

五、發明說明（3) 信號。此等信内容。然而，最後，本統之一項策略部份。使用光殊反射方法來台邊緣上的晶的效應，同時 PCT申請案W0 在另一策束於晶圓和塗複數反射。晶體之前，若進少因晶圓上的 5, 413, 941 號，測量。號具有在拋光周期過程中釋出此等聲波策略在商業上還不可行先°曰和波幅 f明=屬於此組光學EPD系統。在光學EpD 中，載體定位在平台邊緣，以暴露晶二纖質的裝置，在晶圓表面引導光，並用分析信號。此項策略的缺點是，以定位在平圓’晶圓受到橫越晶圓的拋光墊片邊緣相關有一部晶圓完全暴露。此種策略之一例 98/05066號。略中，把晶圓稍微提升離開墊片，而引導光漿液墊片之間。光束以小角度入射，以發生圓上的不規則形態會造成散射，但在提升载行充分搬光，則晶圓表面會基本上平垣，& 形態而散射。此種策略之例載於美國專利第其難題是正常的製程周期必須間斷，才能又一策略是在受到拋光的晶圓背側入射光束之紅外線光譜内，賦予監察吸收特定波長，使光束從晶圓的非抛光側穿過晶圓。充分界定的狹窄光譜窗内之吸收變化，相當於特種膜的厚度變化。此項策略的缺點是，在晶圓增加複數金屬層，信號的敏感度會谈速降低。此種策略之一例載於美國專利第5, 643,（ηΓ號。檢測矽晶圓表面何時已拋光至所需程度的技術之一是 XIs. 3& jHtt 490361 五、發明說明（4) CMP裝置的拋光平台内。此項策略之一例載於Lus tig等人的美國專利第5, 433，651號，其中視窗聯結於反光測量設備，以檢測末端短。另一策略見歐洲專利申請案EP 0 824 995 A1，在實際拋光墊本身使用透明視窗。旋轉拋光器用的類似策略載於歐洲專利申請案EP 0 738 56 1 A1，使用有光學視窗的墊片，來透射EPD所用的光。在此等策略中，視窗使CMP製程複雜化，因為對晶圓呈現拋光墊片中的不均勻性。在此等區域也會累積漿液和拋光碎屑，有使經過的光散射的傾向，因而使末端點檢測器射出的光減弱。在前案光學末端點檢測系統中固有的問題，較好是參照所附第1、1 A和2圖加以說明。第1圖為通常化學機械式拋光總成的簡略圖，不按比例，包含平台1Q，裝有中央心軸12，容許平台轉動。實質上圓形平台1〇的頂表面覆蓋拋，墊片14，以黏著劑等習知手段附著。如第2圖所示，拋光墊片14常刻按X和y方向延伸的凹溝，形成栅袼， X方向凹溝16和交又垂直凹溝18。另外，拋光墊片可沿周凹溝。此等凹溝典型上又淺又狹，有助於化液在化學機械式拋光中的分佈。把光=光裝置内使用光學末端點檢測器時’ ，使：織乂i之：孔，|穿塾片14上之對準腔孔馆矣末柏人端與凹溝16下端齊平，因而與墊片〗4的頂表面稍微隔離凹溝深度，如 @ ^ 的纖2〇,其一為「送光纖又^第1A，所不。通常使用二光尹政s =上纖」’另一為「受光纖」0 紙發現上述前案光學末端點檢測系統，受到工件拋光5. Description of the invention (3) Signal. The contents of these letters. However, in the end, a strategic part of the system. The special reflection method is used to counteract the effects of crystals on the edge of the stage, while PCT application W0 is another way to limit wafer and coating reflection. Before the crystal, if the number of advances is 5,413,941 on the wafer, measure. No. has been released during the polishing cycle. These sonic strategies are not commercially feasible yet, and the amplitude f Ming = belongs to this group of optical EPD systems. In optical EpD, the carrier is positioned at the edge of the platform to expose the crystalline bifibrous device, guide the light on the surface of the wafer, and analyze the signal with. The disadvantage of this strategy is that one wafer is completely exposed in relation to the edge of a polishing wafer that is positioned across a wafer 'across the wafer. An example of such a strategy is 98/05066. Slightly, lift the wafer slightly away from the shim, and guide the light between the slurry shims. The light beam is incident at a small angle, and it will cause scattering due to the irregular shape on the circle. However, when the lifter is fully moved, the wafer surface will be basically flat and scattered. An example of this strategy is described in the U.S. patent. The problem is that the normal process cycle must be discontinued. Another strategy is to give a specific wavelength in the infrared spectrum of the incident light beam on the back side of the polished wafer to monitor and absorb the light from the crystal The round non-polished side passes through the wafer. The absorption change in a narrowly defined narrow spectral window is equivalent to the thickness change of a special film. The disadvantage of this strategy is that by adding multiple metal layers on the wafer, the sensitivity of the signal is reduced. An example of this strategy is described in US Patent No. 5,645 (ηΓ). One of the techniques for detecting when the surface of a silicon wafer has been polished to the required level is XIs. 3 & jHtt 490361 V. Description of the invention (4) CMP device An example of this strategy is shown in U.S. Patent No. 5,433,651 by Lus tig et al., Where the window is connected to a reflective measuring device to detect short ends. Another strategy is described in European patent application EP 0 824 995 A1, which uses a transparent viewing window in the actual polishing pad itself. A similar strategy for rotary polishers is contained in European patent application EP 0 738 56 1 A1, which uses a spacer with an optical viewing window to transmit the light used in EPD. Here In the strategy, the window complicates the CMP process because the wafers exhibit non-uniformity in the polishing pads. Slurry and polishing debris can also accumulate in these areas, which tends to scatter the passing light, thus making the end point The light emitted by the detector is attenuated. The problems inherent in the optical end point detection system of the previous case are better explained with reference to the attached Figures 1, 1 A and 2. The first figure is a simplified diagram of a conventional chemical mechanical polishing assembly The figure, not to scale, includes the platform 1Q, equipped with a central mandrel 12, allowing the platform to rotate. The top surface of the substantially circular platform 10 is covered with polishing, and the gasket 14 is attached by conventional means such as adhesive. As shown in the figure, the polishing pad 14 is often engraved with grooves extending in the X and y directions to form a grid ridge, the X-direction groove 16 and the vertical vertical groove 18. The polishing pad may be along the peripheral groove. The grooves are typically shallow and narrow, which helps the distribution of chemical fluids in chemical mechanical polishing. When light = optical device is used in the optical end point detector ', so that: weaving i: holes, | through The end of the alignment cavity on the plate 14 is flush with the lower end of the groove 16 and is therefore slightly separated from the depth of the groove 4 by the top surface of the gasket 4, such as @ ^ 的 2〇, one of which is "Send Optical fiber ^ 1A, no. Usually use two light Yinzheng s = fiber "'The other is the" received fiber "0 paper found in the previous case optical end point detection system, subject to workpiece polishing

490361 五、發明說明（5) 造成污染物的干擾，在化學裝液 ’ ^ 光纖」20接受的光，有時造成光=形成氣泡，強化經「受到的雜訊。預料得到，在化學測器（圖上未示）觀察銅質電路之半導體晶圓，銅教及式抛光中，特別是含有接觸’導致此等光纖結垢和污、反應生成物會與光纖檢測受到負面影响。 >、。結果，準確光學末端點因此，亟需一種光學末蠕點 ·: 清理，可加裝於現有化學機械=測系統，簡單又可自行換拖光墊等消耗品。巧理裝置，並,提供容易更發明概本發明此節概述旨在引導讀完整說明發明内容。本發明特^ f明瞭本發明重點，而非而本發明範圍單由所附申請專寿丨篇Ξ i SI ί節中載明，本發明提供在基體上監察膜摩用之裝置。此裝置包含罩殼，包含有井部之第一端，延伸貫穿外殼至井部之腔孔 ’以^與井部呈流體相通之流難通道。此裝置亦包含光學檢測器總成，位在腔孔内，^以光學方式檢測受到拋光之基體。按照本發明一具體例，光學檢測器總成包含光織探針、’和第一端連接於光纖探針之光殲電纜，第二端連接至光名贵、〇山按照本發明次一具體例，光學檢測器總成，包含具有钏it面之第一端，和連接至光殲電缆之第二端。光學檢 d is ^成之第一端位在井部内，而尖端表面則與罩殼第一第9貢 490361 五、發明說明（6) 端的表面齊平。本發明另一具體例中，裝置含有流體泵，逼使流流體源通過流體通道，進入井部内。攸本發明又一具體例令，罩殼又含有流體排放管道，第一端與井部流體相通，流體排放管道從井部延奴表面。早殼筏照本發明再 ” _ η 〜γ 1 ^q ,u 拋光製程末端點之方法，包含：以拋光墊片，式罩殼，其中罩殼包含鄰接光學檢測器=檢，總成用之逼入罩殼之井部内；以及透過監察檢===井部；把流體拋光。〗到末端點時，停止本發明上述和其他要旨，載於如範圍和附圖。 Γ况明書、申請專利圓式簡單說！本發明之具體實施例參照附圖說明識指相同元件，附圖中：下’其中相同標第1圖為安裝在轉動平台的前案化之簡略說明圖；機械式抛光塾片第1Α圖為第1圖所示前案裝置有光第2圖為拋光墊片頂表面之簡圖（前纖 ^ ^圖巷之方形矩陣；耵案），表不有凹溝第3圖為本發明具體例之簡略側視圖· 第4圖為本發明光學末端點檢測系統之簡圖·， 490361 五、發明說明（7) 第5圖為本發明具體例之俯視圖；第6圖為本發明另一具體例之簡略側視圖；第7圖為本發明又一具體例之簡略側視圖。發明之詳細說明以下說明只是具體實施例，絲毫無意限制發明之範圍、應用性或形態。以下說明旨在提供方便說明本發明之實施具體例。所述具體例在元件功能和配置方面，可以有各種變化，不違本發明所附申請專利範圍。，本發明提供化學機械式拋光中末端點檢.測技藝方面的重大進步。具體而言，本發明提供一種光學末端點檢測系統，較不易被污染物結垢和受到化學漿液内所形成氣泡之干擾。本發明末端點檢測裝置之簡圖如第3圖所示。由圖可見，晶圓載體100持有要拋光之晶圓V。晶圓載體1〇〇最好繞垂直軸線102轉動。拋光墊片104安裝在抛光平台1〇6上。拋光塾片104的硬度和密度，是根據所要平整材料種類選擇。CMP系統宜利用吹製聚胺酯墊片，諸如美國亞里桑納州Scottsdale市Rodel產品公司所製1C和GS系列塾片，雖然任何適當之拋光墊片均可用。含有氧化矽或氧化銘等磨性媒體之拋光漿液，可通過管路（圖上未示）沉積在抛光塾片104的表面。拖光平台106連接到驅動器或馬達總成 (圖上未示），此係操作來運動拋光平台1〇6和抛光塾^片1〇4 ’按軌跡運動，或繞垂直轴線（圖上未示）轉動拖光 ^ 106 。卞〇490361 V. Description of the invention (5) Causes the interference of pollutants, and the light received in the chemical filling liquid '^ optical fiber' 20 sometimes causes light = formation of bubbles, which strengthens the "noise received. It is expected that in the chemical detector (Not shown in the figure) When observing the semiconductor wafers of copper circuit, copper teaching and polishing, especially the contact, it will cause such optical fiber scaling and fouling, and the reaction products will negatively affect the optical fiber detection. &Gt;, .Result, accurate optical end point Therefore, there is an urgent need for an optical end creep point: cleaning, which can be added to the existing chemical machinery = measuring system, simple and consumables such as mopping pads can be replaced by oneself. It is easy to invent the invention. This section of the present invention is intended to guide you through the complete description of the invention. The present invention ^ f clarifies the main points of the invention, but not the scope of the invention, which is included in the attached application. It is clear that the present invention provides a device for monitoring membrane friction on a substrate. The device includes a cover, including a first end of a well portion, and a cavity hole extending through the shell to the well portion to communicate with the well portion in fluid flow. Difficult passage. The device also includes an optical detector assembly, which is located in the cavity, and optically detects the polished substrate. According to a specific example of the present invention, the optical detector assembly includes a light-woven probe, and the first end is connected to The second end of the fiber-optic probe's optical annihilation cable is connected to the optically precious and optical fiber. According to a specific example of the present invention, the optical detector assembly includes a first end having a 钏 it surface and an optical annihilation cable. The second end. The first end of the optical inspection is located in the well, and the surface of the tip is flush with the first ninth tribute 490361 of the cover. 5. Description of the invention (6) The end of the invention is another specific example of the present invention. In the device, the device includes a fluid pump forcing the source of the flowing fluid through the fluid channel to enter the well. According to another specific example of the present invention, the casing further includes a fluid discharge pipe, and the first end is in fluid communication with the well, and the fluid discharge pipe is from Yannu surface of the well part. Early shell raft according to the present invention "_ η ~ γ 1 ^ q, u The method of polishing the end point of the process includes: polishing the pad, a cover, wherein the cover contains an adjacent optical detector = Check Portion of the housing within the well; and the well === By monitoring the subject; the polishing fluid. When the end point is reached, the above and other gist of the present invention are stopped, as set forth in the scope and drawings. Γ State book, patent application The specific embodiment of the present invention refers to the same components with reference to the drawings. In the drawings, the following diagrams are the same: Figure 1 is a simplified illustration of the previous case installed on a rotating platform; Figure 1A of a mechanical polishing cymbal is The former device shown in Figure 1 has light. The second figure is a simplified diagram of the top surface of the polishing pad (the square matrix of the front fiber ^^ lane; the case), with or without grooves. The third figure is a specific example of the present invention. A simplified side view. Figure 4 is a simplified diagram of the optical end point detection system of the present invention. 490361 V. Description of the invention (7) Figure 5 is a top view of a specific example of the invention; Figure 6 is another specific example of the invention FIG. 7 is a schematic side view of another specific example of the present invention. Detailed description of the invention The following descriptions are only specific examples, and are not intended to limit the scope, applicability, or form of the invention in any way. The following description is intended to provide specific examples for easily explaining the embodiments of the present invention. The specific example may have various changes in element function and arrangement without departing from the scope of the patents attached to the present application. The present invention provides a major advancement in point inspection and measurement techniques in chemical mechanical polishing. Specifically, the present invention provides an optical end point detection system that is less susceptible to fouling by contaminants and interference from air bubbles formed in a chemical slurry. A simplified diagram of the end point detection device of the present invention is shown in FIG. As can be seen from the figure, the wafer carrier 100 holds a wafer V to be polished. The wafer carrier 100 is preferably rotated about a vertical axis 102. The polishing pad 104 is mounted on the polishing platform 106. The hardness and density of the polishing pad 104 are selected according to the kind of material to be leveled. CMP systems should preferably utilize blown polyurethane pads, such as 1C and GS series cymbals made by Rodel Products of Scottsdale, Arizona, USA, although any suitable polishing pad may be used. The polishing slurry containing abrasive media such as silicon oxide or oxide can be deposited on the surface of the polishing pad 104 through a pipeline (not shown). The towing platform 106 is connected to a driver or a motor assembly (not shown in the figure), and this system is used to move the polishing platform 106 and the polishing pad 104. (Shown) Turn the drag light ^ 106.卞〇

490361 五、發明說明（8) 平台106設洞孔108。洞孔108位置使得平臺1〇6—部份動時，可以見到晶圓載體1〇〇所持晶圓。洞孔1〇8可段式直徑，因而形成肩部110。肩部Π0用來容納和持 ^針總成90。探針總成90包含探針罩殼112。探針罩殼、的頂面114宜構成與拋光平台106的頂面Π6齊平。一或 ^ ^之環形填隙片1 1 8位於鄰近肩部1 1 〇，可提升探針罩教使探針罩殼112的頂面114與拋光平台1〇6的頂面116 ，平。在變通具體例中，探針罩殼112具有不變的均勻直 $，而洞孔1〇8同樣具有不變的均勻直徑，以容納探針總。探針罩殼112可利用鎖定機制ι24固定於洞孔，疋機制124可為併緊螺帽或適於構成把探針罩殼112固定孔108之任何其他鎖定元件或以上之填隙片可位斑拗ΐ1工06和鎖定機制I24之間，使探針罩殼112的頂面114 與拋光平台106的頂面Π6齊平。 n if 罩殼112在外表面有至少一環形凹溝120,可容納 ^ = =2。圈環122於把探針罩殼丨12和拋光平台1〇6間的界殼Γΐ 9 P3古使化學漿液（圖上未不）在拋光墊片104和探針罩，不致於經平台106底部漏出。雖然第3 有二個圈環122置於二環形凹溝120内，須知亦可使用一個、三個或以上的圈環122和環形凹溝120。 y2緊利螺用产鎖，\機摘制124固定於洞孔108内。所謂機制124可為鎖ί=構成把探針罩殼112固定於洞孔I。8内之探針罩殼112含有腔孔132 ’位於與縱軸線134平行，第12頁 490361 $、發明說明（9) 並從探針罩殼112的底面136延伸，到井部126為止。雖然如第3圖所示，腔孔i 32係位於與縱軸線丨34同心，但腔孔 132亦可位在沿與縱轴線134平行的任何轴線，光學檢測器總成’諸如寬帶光譜反射計感測器總成，可容納在腔孔 1 3 2内。在第3圖所示具體例内，寬帶光譜反射計感測器總成包含光纖電規總成1 3 8，雖則可知任何適當反光裝置均可用。光纖電纜總成138包含光纖探針140 ,操作上連接到光纖電欖142。突緣144連接到光纖探針14〇 ,構成把光纖探針140容納和持有在.腔孔132内。雖然第3圖所示突緣144 ，係一體連接於光纖探針14〇，突緣144亦可利用任何適當 $制連接到光纖探針140，諸如螺合在光纖探針14〇之螺紋部。鎖定元件146用來把光纖探針140固定於探針罩殼112 :在此具體例中，鎖定元件146包括螺釘，容納於探^針罩设112/内預鑽設的洞孔；然而，鎖定元件146可包含或利用任何妥當扣件或連接機制，包含球體、銷等。抛光整片104包含貫通孔148，與井部126配合並相通二貫通孔148的直徑宜比井部126直徑為小，雖則應大到足夠/不干擾從光纖探針140透光。雖然第3圖所示貫通孔148 直徑較井度1 26為小，但須知貫通孔1 48的直徑可等於井部 126的直徑。光纖探針140的尖端156表面宜位在井部126内 ’並與探針罩殼112的表面114齊平。然而，須知尖端156 I延伸超越表面154，進入貫通孔148内，雖然尖端156不且延伸遠到接觸晶圓W。另外，尖端1 5 6可位在表面1 1 4以下和井部126内，或尖端15 6可與井部126的底面158齊平。490361 V. Description of the invention (8) The platform 106 is provided with a hole 108. The position of the hole 108 enables the platform 106 to partially move, and the wafer held by the wafer carrier 100 can be seen. The hole 108 can be segmented in diameter, thus forming a shoulder 110. The shoulder Π0 is used to receive and hold the needle assembly 90. The probe assembly 90 includes a probe cover 112. The top surface 114 of the probe cover housing 1 should be formed flush with the top surface Π6 of the polishing platform 106. One or ^ ^ ring-shaped shims 1 1 8 are located adjacent to the shoulder 1 1 0, which can enhance the probe cover teaching so that the top surface 114 of the probe cover 112 and the top surface 116 of the polishing platform 106 are flat. In a specific embodiment, the probe cover 112 has a constant uniform straight, and the hole 108 also has a constant uniform diameter to accommodate the total probe diameter. The probe cover 112 may be fixed to the hole by using a locking mechanism ι24, and the cymbal mechanism 124 may be a tightening nut or any other locking element or more suitable for constituting the fixing hole 108 of the probe cover 112 may be positioned. The top surface 114 of the probe cover 112 is flush with the top surface Π6 of the polishing platform 106 between the multicolored work 06 and the locking mechanism I24. The n if cover 112 has at least one annular groove 120 on the outer surface, which can accommodate ^ = = 2. The ring 122 is used to place the boundary shell Γΐ 9 between the probe cover 12 and the polishing platform 106. The P3 ancient chemical slurry (not shown in the figure) is on the polishing pad 104 and the probe cover, and will not pass through the bottom of the platform 106. leakage. Although the third ring has two ring rings 122 placed in the two ring grooves 120, it should be noted that one, three or more ring rings 122 and ring grooves 120 may be used. The y2 tightening screw uses a production lock, and the machine pick 124 is fixed in the hole 108. The so-called mechanism 124 may be configured to lock the probe cover 112 to the hole I. The probe cover 112 in 8 contains a cavity 132 ′ located parallel to the longitudinal axis 134, page 12 490361 $, description of the invention (9), and extends from the bottom surface 136 of the probe cover 112 to the well portion 126. Although the cavity i 32 is located concentric with the longitudinal axis 34 as shown in FIG. 3, the cavity 132 can also be located along any axis parallel to the longitudinal axis 134. The optical detector assembly such as a broadband spectrum The reflectometer sensor assembly can be received in the cavity 1 2 2. In the specific example shown in Figure 3, the broadband spectral reflectometer sensor assembly includes a fiber optic electrical gauge assembly 138, although any suitable reflecting device may be used. The fiber optic cable assembly 138 includes a fiber optic probe 140 that is operatively connected to a fiber optic power cable 142. The flange 144 is connected to the optical fiber probe 140, and is configured to receive and hold the optical fiber probe 140 in the cavity 132. Although the flange 144 shown in FIG. 3 is integrally connected to the optical fiber probe 140, the flange 144 may also be connected to the optical fiber probe 140 using any appropriate system, such as screwing on the threaded portion of the optical fiber probe 140. The locking element 146 is used to fix the optical fiber probe 140 to the probe cover 112: In this specific example, the locking element 146 includes a screw and is received in the probe cover 112 / a pre-drilled hole; however, the lock Element 146 may include or utilize any suitable fastener or connection mechanism, including spheres, pins, and the like. The polishing sheet 104 includes a through hole 148, which cooperates with and communicates with the well portion 126. The diameter of the through hole 148 should be smaller than the diameter of the well portion 126, although it should be large enough to not interfere with light transmission from the fiber probe 140. Although the diameter of the through-hole 148 shown in FIG. 3 is smaller than the well degree 126, it should be noted that the diameter of the through-hole 148 may be equal to the diameter of the well portion 126. The surface of the tip 156 of the fiber optic probe 140 is preferably positioned within the well portion 126 'and is flush with the surface 114 of the probe housing 112. It should be noted, however, that the tip 156I extends beyond the surface 154 and into the through hole 148, although the tip 156 does not extend far enough to contact the wafer W. In addition, the tip 1 5 6 may be located below the surface 1 1 4 and within the well portion 126, or the tip 15 6 may be flush with the bottom surface 158 of the well portion 126.

490361 五、發明說明（ίο) 探針罩殼112亦含有流體管道1 28，位於與縱軸線134 平行，並從探針罩殼112的底面136延伸到側支管道150。雖然第3圖表示側支管道150與流體管道128呈90度角，須知側支管道1 5 0可在沿流體管道1 2 8的任何適當點，位於與流體管道128呈任何適當角度，使側支管道150造成在井部 1 2 6和流體管道1 2 8之間流體相通。第5圖表示探針罩殼112之俯視圖，有光纖探針140貫穿。在本發明具體例内，側支管道1 5 〇位在探針罩殼11 2内，使側支管道1 5 0的出口細孔1 5 2，把流體引到井部1 2 6内偏離光纖探針140之一點。出口細孔152把流體引導流動至光纖探針1 4 0旁之一點，可容許流體流動以湍流方式繞過和越過光纖探針140，以增進漿液和其他污染物從光纖探針140除去。回頭參見第3圖，流體管道128是在連接於側支管道 150—端的相反端，連接到流體管線13〇。流體管線13〇操作上連接於流體源（圖上未示）和流體泵（圖上未示可操作泵送流體通過流體管線1 3 0和流體管道1 2 8至側支管道 1 5 0，在此流出到井部1 2 6。在本發明一實施具體例内，流體為脫離子水。另外，流體可包含任何適當清洗液，容許光從光纖探針1 4 0透過，不受到溶液顆粒的干擾。例如，可於脫離子水添加氨或氫氧化鉀，使流體pH可以更接近 CMP製程中所用的漿液PH。當流體被泵送通過流體管線130 和流體管道1 2 8時，流體泵會造成流體以正壓力進入井部 1 2 6 °在本發明一具體例内，流體栗可逼使流體以約1. 〇490361 V. Description of the Invention (ίο) The probe cover 112 also contains a fluid pipe 128, which is located parallel to the longitudinal axis 134 and extends from the bottom surface 136 of the probe cover 112 to the side branch pipe 150. Although FIG. 3 shows that the side branch pipe 150 and the fluid pipe 128 are at an angle of 90 degrees, it should be noted that the side branch pipe 150 can be located at any suitable point along the fluid pipe 1 2 8 at any suitable angle with the fluid pipe 128 so that the side The branch pipe 150 causes fluid communication between the well section 1 2 6 and the fluid pipe 1 2 8. Fig. 5 shows a plan view of the probe cover 112 through which the optical fiber probe 140 penetrates. In the specific example of the present invention, the side branch pipe 150 is located in the probe cover 112, so that the outlet fine hole 15 of the side branch pipe 150 can lead the fluid into the well portion 1 2 6 and deviate from the optical fiber. One point of the probe 140. The exit pores 152 direct the fluid to a point next to the fiber optic probe 140, allowing fluid flow to bypass and pass the fiber optic probe 140 in a turbulent manner to promote the removal of slurry and other contaminants from the fiber optic probe 140. Referring back to FIG. 3, the fluid pipe 128 is connected to the fluid line 130 at the opposite end connected to the side of the side branch pipe 150. The fluid line 130 is operatively connected to a fluid source (not shown in the figure) and a fluid pump (not shown in the figure) to pump fluid through the fluid line 1 30 and the fluid pipe 1 2 8 to the side branch pipe 1 50, in This flows out to the well 1 2 6. In an embodiment of the present invention, the fluid is deionized water. In addition, the fluid may contain any suitable cleaning liquid, allowing light to pass through the fiber probe 1 40, and not subject to the particles of the solution For example, ammonia or potassium hydroxide can be added to the deionized water to make the pH of the fluid closer to the pH of the slurry used in the CMP process. When the fluid is pumped through the fluid line 130 and the fluid line 1 2 8, the fluid pump will 〇 Caused by a positive pressure of fluid into the well 1 2 6 ° In a specific example of the present invention, the fluid pump can force the fluid to about 1. 0

第14頁 490361 五、發明說明（11) psi至約2.0 psi的壓力範圍通過流體管道128。然而，須知流體可以任何適當壓力進入井部126，造成漿液和其他污染物從光纖探針140的尖端156和晶圓W間之面積洗掉。貫通孔1 48的直徑比井部1 26直徑小，流體被逼進入井部 126和貫通孔148内，以防漿液進入貫通孔148因而干擾光纖探針140之測量。本發明全體系統的功能圖如第4圖所示。光纖電纜142 從光纖探針140引導至光學辆合器2 00，從光源,202經由光纖電纜204接受光。光學耦合器20 0亦輸出反射光信號，經由光纖電纜208至光感測器206。按照本發明，反射光信號的產生如下所述。電腦210提供控制信號21 2至光源202，從光源202導引光的發射。光源202為寬帶光源，以波長在200和200Onm (紫外線至近紅外線）的光譜為佳。鎢灯泡適合作為光源 202。電腦210亦接到開始信號214，作動光源202和EPD方法。電腦亦提供末端點觸發器216，決定到達拋光末端分別由位置感測器218提供墊片/平台總成的位置，同時由晶圓載體100之轉動位置感測器220提供晶圓載體 100對電腦210之角度位置。電腦210可同時對來自感測器的位置資訊觸發資料收集。操作時，在CMP製程開始之後，即對電腦2 1 〇提供開始信號214，以引發監察製程。電腦210再指導光源202把來自光源202的光，經由光纖電規204傳輸到光學耦合器200Page 14 490361 V. Description of the Invention (11) A pressure range from psi to about 2.0 psi passes through fluid conduit 128. However, it should be noted that the fluid can enter the well portion 126 at any appropriate pressure, causing the slurry and other contaminants to be washed away from the area between the tip 156 of the fiber probe 140 and the wafer W. The diameter of the through-hole 148 is smaller than the diameter of the well portion 126, and the fluid is forced into the well portion 126 and the through-hole 148 to prevent the slurry from entering the through-hole 148 and thus disturbing the measurement of the optical fiber probe 140. A functional diagram of the entire system of the present invention is shown in FIG. 4. The optical fiber cable 142 is guided from the optical fiber probe 140 to the optical coupler 200, and receives light from the light source 202 via the optical fiber cable 204. The optical coupler 200 also outputs a reflected optical signal and passes through the optical fiber cable 208 to the optical sensor 206. According to the present invention, the generation of the reflected light signal is as follows. The computer 210 provides a control signal 21 2 to the light source 202 to guide the emission of light from the light source 202. The light source 202 is a broadband light source, and preferably has a spectrum at a wavelength of 200 and 200 nm (ultraviolet to near infrared). A tungsten light bulb is suitable as the light source 202. The computer 210 also receives a start signal 214 and activates the light source 202 and the EPD method. The computer also provides an end point trigger 216, which determines the position of the pad / platform assembly provided by the position sensor 218 when the polishing end is reached, and the wafer carrier 100 to the computer is provided by the rotation position sensor 220 of the wafer carrier 100. An angular position of 210. The computer 210 can simultaneously trigger data collection on the location information from the sensors. In operation, after the CMP process is started, a start signal 214 is provided to the computer 2 10 to trigger the monitoring process. The computer 210 then instructs the light source 202 to transmit the light from the light source 202 to the optical coupler 200 via the optical fiber electric gauge 204

第15頁 490361Page 15 490361

。光從而途徑光纖電缆142，通過拋光墊104上的貫通孔 1 4 8，入射到晶圓w的界面。晶圓W表面的反射光，由光纖探針140捕集，傳輸通過光纖電纔1 42，繞回到光學耦合器2 〇〇。雖然在較佳具體例中，反射光是使用光纖探針140接續，但須知亦可使用分開的精敏光纖探針和連績之分開光纖電纜。光學耦合器200接續此反光信號通過光纖電缆208，至光感測器206。光感測器206操作上對電臑210提供反射光的反射光譜資料222，以下稱反射光譜資料22 2。利用光源2 0 6經特定或預定整合時間後，反射光譜資料222即傳輸至電腦21〇，對反射光譜資料222進行分析。電腦210分析結果之一是末端點信號224，顯示在監察器 226上。電腦21〇宜自動把末端點信號224與預定標準加以比較’作為比較的函數輸出末端點觸發器216。另外，操作者可以監察末端點信號224，根據操作者對末端點信號 224的解释，選擇末端點。末端點觸發器216造成CMP裝置推進到次一步驟。光織電纜總成138具有之一優點是，可快速更換拋光塾片1 0 4，又能保存對後續晶圓末端點檢測之能力。因為光纖電纜總成138實體上並未連接到拋光墊片1〇4，藉除去用過的拋光墊片，改放入新的拋光墊片，即可把新拋光墊片104裝好。光纖電纜總成138具有另一優點是，在CMP製程内可用習知拋光墊片。對拋光墊片104不需要大幅修改0. The light thus passes through the optical fiber cable 142, passes through the through holes 1 4 8 on the polishing pad 104, and is incident on the interface of the wafer w. The reflected light on the surface of the wafer W is captured by the optical fiber probe 140, transmitted through the optical fiber 142, and wound back to the optical coupler 200. Although in the preferred embodiment, the reflected light is connected using the fiber probe 140, it should be noted that a separate sensitive fiber probe and a continuous fiber optic cable can also be used. The optical coupler 200 continues the reflected light signal through the optical fiber cable 208 to the light sensor 206. The light sensor 206 is operable to provide reflection spectrum data 222 of the reflected light to the battery 210, hereinafter referred to as reflection spectrum data 22 2. After using the light source 2 06 for a specific or predetermined integration time, the reflection spectrum data 222 is transmitted to the computer 21 and the reflection spectrum data 222 is analyzed. One of the analysis results of the computer 210 is the end point signal 224, which is displayed on the monitor 226. The computer 21 should automatically compare the end point signal 224 with a predetermined standard 'and output the end point trigger 216 as a function of the comparison. In addition, the operator can monitor the end point signal 224 and select the end point based on the operator's interpretation of the end point signal 224. End point trigger 216 causes the CMP device to advance to the next step. One of the advantages of the optical woven cable assembly 138 is that it can quickly replace the polished cymbals 104, and it can also retain the ability to detect the end points of subsequent wafers. Because the optical fiber cable assembly 138 is not physically connected to the polishing pad 104, by removing the used polishing pad and replacing it with a new polishing pad, the new polishing pad 104 can be installed. The fiber optic cable assembly 138 has another advantage in that conventional polishing pads can be used during the CMP process. No significant modification to polishing pad 104 is required

第16頁 490361 五、發明說明（13)Page 16 490361 V. Description of the invention (13)

在本發明另一具體例中，如第6圖所示，探針罩殼Π2 又含有流體排放管道3 0 0，構成與縱軸線1 3 4平行，並從探針罩殼112的底面136延伸到井部126。流體排放管道300連接至流體排放管線302。流體排放管線302宜連接至真空泵 (圖上未示），在排放細孔304產生負壓。在排放細孔304的負壓造成流體引進井部126，在輸出細孔152被抽出井部〃 126外。從井部126經排放管道300除去流體，可防止井部 126内的流體積留在拋光墊片1〇4的表面以至抵，銷漿液磨光作用的程度。然而，在排放細孔3 0 4處的負壓最好維持在輸出細孔1 5 2引進的流體壓力以下，故容許流體積留到適當程度，防止漿液進入貫通孔148。雖然本發明上述具體例是使用連接至流體排放管線302之真空泵，但另外容許井部1 2 6内的流體可在重力影响下，經由流體排放管道3 0 0 排出。In another specific example of the present invention, as shown in FIG. 6, the probe cover Π2 further contains a fluid discharge pipe 3 0 0, which is parallel to the longitudinal axis 134 and extends from the bottom surface 136 of the probe cover 112. To the well 126. The fluid discharge line 300 is connected to a fluid discharge line 302. The fluid discharge line 302 should be connected to a vacuum pump (not shown in the figure) to generate a negative pressure in the discharge pores 304. The negative pressure at the discharge pores 304 causes the fluid to be introduced into the well portion 126, and the output pores 152 are drawn out of the well portion 126. Removing the fluid from the well portion 126 through the discharge pipe 300 can prevent the flow volume in the well portion 126 from remaining on the surface of the polishing pad 104 to the extent that the polishing effect of the slurry is pinned. However, the negative pressure at the discharge pores 304 is preferably maintained below the fluid pressure introduced by the output pores 152, so the flow volume is allowed to stay to an appropriate level to prevent the slurry from entering the through holes 148. Although the above-mentioned specific example of the present invention uses a vacuum pump connected to the fluid discharge line 302, the fluid in the well portion 12 is allowed to be discharged through the fluid discharge pipe 300 under the influence of gravity.

在本發明又一具體例中，如第7圖所示，探針罩殼含有流體管道400，位於與縱轴線134平行，並從底面136延伸至井部126。流體管道400連接至流體管線130。流體管線130操作上連接至流體源（圖上未示）和流體果（圖上未示），把流體泵送通過流體管線130和流體管道400，在此流入井部126内。探針罩殼又包含流體排放管道300，從探針罩殼11 2的底面1 3 6延伸到井部1 2 6。流體排放管道3 〇〇接至流體排放管線3 0 2。流體排放管線3 0 2宜連接至真空泵 (圖上未示），在排放細孔304產生負壓。排放細孔304處的負壓造成流體在流體管道4〇〇導進井部126内，於輸出細孔 ΙΙΗϋΙ ΙΒ1ΗΗΙ 第17頁 490361 五、發明說明（14) 4 0 2處抽出井部1 2 6外。排在排放細孔3 0 4處的負壓，宜維持在輸出細孔4 0 2引進的流體壓力以下，使流體容許積留至適當程度，防止漿液進入貫通孔148内。雖然本發明上述具體例是使用連接至流體排放管線302之真空泵加以說明，但另外井部1 2 6内的流體在重力效應下，容許通過流體排放管道300排出。雖然上述詳細說明記載置於拋光平台内之一探針總成，但任何適當數量的探針總成都可定置於拋光平台内，雖然引進入平整製程中的流體會·隨所用探針總成數增加而遞增。此外，雖然在以上詳述CMP製程之說明中，拋光墊片/ 平台「朝上」而晶圓「朝下」，但本發明亦可顛倒使用，即晶圓「朝上」而拋光墊片/平台「朝下」。由以上圖式可知本發明提供超過前案的重大優點。本發明實質上減少化學漿液内氣泡引起的任何干擾效應，以及拋光碎屑積留在光學檢測總成的感測末端造成的任何正常化反射。雖然本發明已參照附圖說明如上，須知本發明範圍不限於此。上述組件之配置和上述標的元件之使用步驟，均可有各種修飾，而不違本發明在所附申請專利範圍規定之精神和範圍。In still another specific example of the present invention, as shown in Fig. 7, the probe cover includes a fluid pipe 400, which is located parallel to the longitudinal axis 134 and extends from the bottom surface 136 to the well portion 126. The fluid pipe 400 is connected to a fluid line 130. The fluid line 130 is operatively connected to a fluid source (not shown) and a fluid fruit (not shown), and pumps fluid through the fluid line 130 and the fluid pipe 400, and flows into the well portion 126 there. The probe cover further includes a fluid discharge pipe 300 extending from the bottom surface 1 3 6 of the probe cover 112 to the well portion 1 2 6. The fluid discharge pipe 3 is connected to the fluid discharge pipe 3 02. The fluid discharge line 3 0 2 should be connected to a vacuum pump (not shown in the figure) to generate a negative pressure in the discharge pores 304. The negative pressure at the discharge pore 304 causes the fluid to be guided into the well portion 126 in the fluid pipeline 400, and is output to the pore ΙΙΙΙ ΙΒ1ΗΗΙ page 17 490361 V. Description of the invention (14) 4 0 2 wells are withdrawn 1 2 6 outer. The negative pressure at the discharge pores 304 should be kept below the pressure of the fluid introduced by the output pores 402 to allow the fluid to accumulate to an appropriate level to prevent the slurry from entering the through-holes 148. Although the above-mentioned specific example of the present invention has been described using a vacuum pump connected to the fluid discharge line 302, the fluid in the well portion 12 is allowed to be discharged through the fluid discharge pipe 300 under the effect of gravity. Although the above detailed description records a probe assembly placed in the polishing platform, any appropriate number of probes can be placed in the polishing platform. Although the fluid introduced into the leveling process will increase with the number of probe assemblies used While increasing. In addition, although in the above detailed CMP process description, the polishing pad / platform is "up" and the wafer is "down", the present invention can also be used upside down, that is, the wafer is "up" and the polishing pad / The platform is "down". It can be seen from the above drawings that the present invention provides significant advantages over the previous case. The present invention substantially reduces any interference effects caused by bubbles in the chemical slurry, as well as any normalized reflections caused by the accumulation of polishing debris on the sensing end of the optical detection assembly. Although the present invention has been described above with reference to the accompanying drawings, it is to be understood that the scope of the present invention is not limited thereto. The configuration of the above-mentioned components and the use steps of the above-mentioned target components can be variously modified without departing from the spirit and scope of the present invention in the scope of the attached patent application.

第18頁 490361 圖式簡單說明第1圖為安裝在轉動平台的前案化學機械式拋光墊片之簡略說明圖；第1A圖為第1圖所示前案裝置有光纖***之放大圖；第2圖為拋光墊片頂表面之簡圖（前案），表示有凹溝之方形矩陣；第3圖為本發明具體例之簡略側視圖；第4圖為本發明光學末端點檢測系統之簡圖；第5圖為本發明具體例之俯視圖；第6圖為本發明.另一具體例之簡略側視圖；第7圖為本發明又一具體例之簡略側視圖。Page 490361 Brief Description of Drawings Figure 1 is a simplified illustration of the former chemical mechanical polishing pad installed on a rotating platform; Figure 1A is an enlarged view of the former device shown in Figure 1 with optical fiber inserted; Figure 2 is a simplified diagram of the top surface of the polishing pad (the previous case), which shows a square matrix with grooves; Figure 3 is a simplified side view of a specific example of the invention; Figure 4 is a simplified diagram of the optical end point detection system of the invention Figure 5 is a plan view of a specific example of the present invention; Figure 6 is a schematic side view of another specific example of the present invention; Figure 7 is a schematic side view of another specific example of the present invention.

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Claims

丄六、申請專利範圍 1 · 一種基 (a) 罩殼該第一端之井與該井部呈流 (b) 光學測受抛光之基 2·如申請總成包括光纖該光纖探針， 3·如申請一端有尖端表一端位於該井表面齊平者。 4·如申請中該流體泵逼 5. 如申請 1, 0 p s i 至約 2 溝道者。 6. 如申請流體排放管道管道從該井部 7. 如申請線，與該流體體上臈 ’具有部，延體相當探蜊器體者。專利範探針、而第二專利範面，第部内，專利範使流體專利範 • 0 psi 專利範，與該延伸至專利範排放管圍第1項之裝置，井部呈流體相通該罩殼表面者。圍第6項之裝置，道呈流體相通者厚變化之監察裝置，包括·· 第一端和第二端，其中談罩殼包括在伸貫穿該罩殼至該井部之腔孔，以及之流體溝道；和總成，位於該腔孔内，以光學方式檢圍第1項之裝置，其中該光學探測器光源，和光纖電纜，其第一端連接至端連接至該光源者。圍第2項之裝置，其中該光纖探針第二端連接至該光纖電纜，又其中該第而該尖端表面則與該罩殼的該第一端圍第1項之裝置，又包括流體泵，其從流體源經該流體溝道，流入該井部圍第4項之裝置，其中該流體泵以約之壓力範圍，逼使該流體流經該流體其中該罩殼又包括，又其中該流體排放又包括流體排放管26. Scope of patent application1. One kind of base (a) the well at the first end of the casing flows with the well (b) the base for optical measurement and polishing 2. If the application assembly includes an optical fiber and the optical fiber probe, 3 · If the application end has a pointed surface and one end is flush with the surface of the well. 4. If the fluid pump is applied in the application 5. If you apply 1, 0 p s i to about 2 channels. 6. If you apply for a fluid discharge pipe, the pipe is from the well section. 7. If you apply for a line, there is a section on the body of the fluid, and the extension body is equivalent to a clam shell. The patent range probe, and the second patent range, in the first part, the patent range fluid patent range • 0 psi patent range, and the device extending to the patent range discharge pipe surrounding item 1, the well is in fluid communication with the cover Superficial. The device surrounding item 6 is a monitoring device for fluid thickness changes, including a first end and a second end, wherein the cover includes a cavity hole extending through the cover to the well, and A fluid channel; and an assembly located in the cavity to optically detect the device of item 1, wherein the optical detector light source and the optical fiber cable have a first end connected to an end connected to the light source. The device surrounding item 2, wherein the second end of the optical fiber probe is connected to the fiber optic cable, and wherein the first and the tip surfaces are connected to the first end of the housing, and the device includes a fluid pump. , Which flows from the fluid source through the fluid channel and flows into the device surrounding the well section item 4, wherein the fluid pump forces the fluid to flow through the fluid within a pressure range of about where the housing includes, and where the Fluid discharge pipe

第20頁 490361Page 490 361

8 ·如申請專利範圍第7項之裝置，其中該流體排放管線在操作上連接至真空源者。 9· 一種在化學機械式拋光製程中以光學檢測末端點用之裝置，包括： (a )平台； (b) 拋光墊片，安裝於平台表面； (c) 罩殼，具有基端和末端，其中該罩殼位於該平台内’並包括在該基端之井部，延伸貫穿該罩殼/至該井部之腔孔，以及與該井部呈流體相通之流體溝道；和 (d) 反射感測器總成，具有第一端和第二端，其中該反射感測器總成係位於該腔孔内，而該第一端則位於該井部内者。 10·如申請專利範圍第9項之裝置，其中該拋光墊片包括細孔，位於鄰接該反射感測器總成之該第一端者。 11·如申請專利範圍第9項之裝置，其中該反射感測器總成包括光纖探針，和光纖電纜，其第一端連接於該光織探針，而第二端連接於光源者。 12·如申請專利範圍第9項之裝置，又包括流體泵，其中該流體泵逼使流體從流體源通過該流體溝道流入該井部内者° 1 3 ·如申請專利範圍第1 3項之裝置，其中該流體泵以約 L 〇 psi至約2· 0 pSi之壓力範圍，逼使該流體流經該流體溝道者。 14·如申請專利範圍第9項之裝置，其中該罩殼又包括8-The device according to item 7 of the patent application, wherein the fluid discharge line is operatively connected to a vacuum source. 9. · A device for optically detecting a terminal point in a chemical mechanical polishing process, comprising: (a) a platform; (b) a polishing pad mounted on a surface of the platform; (c) a cover having a base end and an end, Wherein the casing is located in the platform and includes a well portion at the base end, a cavity extending through the casing / to the well portion, and a fluid channel in fluid communication with the well portion; and (d) The reflection sensor assembly has a first end and a second end, wherein the reflection sensor assembly is located in the cavity, and the first end is located in the well. 10. The device according to item 9 of the patent application scope, wherein the polishing pad includes a small hole located at the first end adjacent to the reflection sensor assembly. 11. The device according to item 9 of the patent application scope, wherein the reflection sensor assembly includes a fiber optic probe and a fiber optic cable, the first end of which is connected to the optical weaving probe and the second end is connected to the light source. 12 · If the device in the scope of the patent application item 9, also includes a fluid pump, wherein the fluid pump forces the fluid from a fluid source into the well through the fluid channel ° 1 3 · As in the scope of the patent application scope item 13 A device in which the fluid pump forces the fluid to flow through the fluid channel at a pressure range of about 0 psi to about 2.0 pSi. 14. The device according to item 9 of the scope of patent application, wherein the cover further comprises

第21頁 490361 六、申請專利範圍流體排放管管道從該井 1 5 ·如申線，與該流 1 6 ·如申線在操作上1 7· — 種方法，包括 (a )以 (b)以 (c )提括井部，鄰 (d) 逼 (e) 藉道’與該井部呈流體相通，又其中該流體排放部延伸至該罩殼表面者。請專利範圍第1 4項之裝置，又包括流體排放管體排放管道呈流體相通者。請專利範圍第1 5項之裝置，其中該流體排放管連接至真空源者。以光學方式檢測化學機械式拋光製程末端點之 18 種明的動態流 (a) 罩該第一端之與該井部呈 (b) 光測受拋光之 1 9 ·如中總成包括光該光纖探針拋光墊片光學檢測供該光學接該光學使流體進經監察探在原位感體界面用殼，具有井部，延流體相當學探測器基體者。請專利範纖探針、，而第二拋光工件表器總成監察檢測器總成檢測器總成入該罩殼之測到末端點測器和基體之裝置’包第一端和第伸貫穿該罩之流體溝道總成，位於圍第18項之光源，和光端連接至該面；工件；用之罩該井部時，停間產生括：二端，殼至該 :和該腔孔裝置，纖電纜光源者殼，其中該罩殼包内；以及止抛光者。大部份為光學上透其中該罩殼包括在井部之腔孔，以及内，以光學方式檢其中該光學探測器，其第一端連接至Page 21 490361 VI. Patent application scope Fluid discharge pipe pipeline from the well 15 · Rushen line with the flow 16 · Rushen line in operation 1 7 ·-a method, including (a) to (b) The well section is enclosed by (c), adjacent to (d), and (e) is in fluid communication with the well section, and wherein the fluid discharge section extends to the surface of the casing. The device claimed in item 14 of the patent scope also includes a fluid discharge pipe where the fluid discharge pipe is in fluid communication. The device of claim 15 is one in which the fluid discharge pipe is connected to a vacuum source. Optically detect 18 bright dynamic flows at the end point of the chemical mechanical polishing process (a) Cover the first end with the well part (b) Photometrically measure the polished part 19 · If the middle assembly includes light The optical fiber probe polishing pad is used for optical detection for the optical access to the optical to monitor the in-situ sensor interface shell, which has a well and a fluid-equivalent detector substrate. Please patent Fan fiber probe, and the second polished workpiece meter assembly monitor monitor detector assembly detector assembly into the cover of the end point detector and the base device 'package the first end and the first extension through The cover's fluid channel assembly, located at the light source surrounding item 18, is connected to the surface with the light end; the workpiece; when the cover is used to cover the well, the stoppage includes: the two ends, the shell to the: and the cavity A device, a fiber-optic cable light source case, wherein the cover is enclosed in a package; and a polisher. Most of them are optically transparent, where the cover includes a cavity in the well, and inside, the optical detector is optically inspected, and the first end is connected to

Air 99 -ΒΓ 490361Air 99 -ΒΓ 490361

20·如申請專利範圍第19項之裝置，其中該光纖探針第一端有尖端表面，第二端連接至該光纖電窥’又其中該第一端位於該井部内，而該尖端表面則與該罩殼的該第~端表面齊平者。 21·如申請專利範圍第18項之裝置，又包括流體泵，其中該流體泵逼使流體從流體源經該流體溝道，流入該井部者0 2 2 ·如申請專利範圍第2丨項之裝置，其中該/流體果以約 1· 0 psi至約2· 〇 psi之壓力範圍，逼使該流體流經該流體溝道者。其中該罩殼又包括又其中該流體排放又包括流體排放管其中該流體排放管 23·如申請專利範圍第18項之裝置，流體排放管道，與該井部呈流體相通，管道從該井部延伸至該罩殼表面者。 24·如申請專利範圍第23項之裝置’ 線，與該流體排放管道呈流體相通者。 25.如申請專利範圍第24項之裝置’ 線在操作上連接至真空源者。20. The device according to item 19 of the patent application scope, wherein the first end of the optical fiber probe has a tip surface, and the second end is connected to the optical fiber telescope ', and wherein the first end is located in the well portion, and the tip surface is Those that are flush with the first end surface of the cover. 21 · If the device under the scope of patent application 18, also includes a fluid pump, wherein the fluid pump forces the fluid from the fluid source through the fluid channel and flows into the well 0 2 2 A device in which the fluid is forced to flow through the fluid channel at a pressure ranging from about 1.0 psi to about 2.0 psi. Wherein the casing further includes the fluid discharge pipe and the fluid discharge pipe 23 of the fluid discharge pipe, such as the device of claim 18, the fluid discharge pipe is in fluid communication with the well section, and the pipe runs from the well section Extend to the surface of the shell. 24. If the device 'line of item 23 of the scope of patent application is in fluid communication with the fluid discharge pipe. 25. The device 'line as claimed in the scope of patent application No. 24 is operatively connected to a vacuum source.

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