TW483793B - Friction fit target assembly - Google Patents

Friction fit target assembly Download PDF

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Publication number
TW483793B
TW483793B TW089113506A TW89113506A TW483793B TW 483793 B TW483793 B TW 483793B TW 089113506 A TW089113506 A TW 089113506A TW 89113506 A TW89113506 A TW 89113506A TW 483793 B TW483793 B TW 483793B
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Taiwan
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target
patent application
base plate
item
scope
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TW089113506A
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Chinese (zh)
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Eugene Y Ivanov
Harry W Conard
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Tosoh Smd Inc
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P11/00Connecting or disconnecting metal parts or objects by metal-working techniques not otherwise provided for 
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)

Abstract

A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of male projections are formed in one member of the assembly with a plurality of corresponding female recesses formed in the other surface. The assembly is bonded by conventional techniques around the peripheral assembly boundaries that surround the male and female portions. The assembly is then pressure consolidated at low temperature so that the projections, circumscribed by the bonded zone, are force fit into the female recesses.

Description

483793 A7 B7 五、發明說明(I ) 本項發明是有關於一種低溫濺鍍機靶件/底板的連結 技巧和因此製造完成之相關組件。 在本項發明申請人所有之美國臨時專利申請案 60/099,981 ( 1998 年 9 月 11 曰提申)和 60/129,559 ( 1999 年4月16日提申)中提供了一種靶件與底板,其中該二部 件的較硬材料被機械加工或以其他方式成形,用以於該二 部件上具有若干個***部位或其他表面凸出部位。以上這 些***部位或凸出部位係沿著該靶件或底板的內部表面而 成形。隨後,***表面沿著靶件/底板介面(連結作用則 將產生於_亥靶件/底板的介面中)而被安置成與組件之其 他構件的匹配表面倂排。 介面表面組件中用於圍繞著***部位或凸出部位的周 圍部位是藉由例如是電子束熔接、T1G(鎢極惰性氣體保護) 熔接、摩擦熔接、軟焊、硬焊等以在真空狀況下作動之傳 統方式而被連結。隨後,該組件在低溫(以是室溫爲較適 宜)下被壓入配合。 經濟部智慧財產局員工消費合作社印製 當沿著靶件或底板成形之凸出部位或***部位在沿著 靶件/底板介面而被***至相匹配的金屬表面內時,該凸 出部位或***部位會產生彎曲,而且於對置匹配表面之較 軟金屬的上方組成一個相互連鎖式握持部件。 發明簡述: 在本項發明中,一種靶件和底板被提供,其中該二部 件材料的機械特性相類似,而且材料均被機械加工或以其 3 ^紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公楚) 483793 A7 B7 五、發明說明(>) 他方式成形、,用以於該二部件上具有若干個***部位和溝 槽或其他表面凸出部位。以上這些***部位或凸出部位係 沿著該靶件或底板的內部表面而成形。隨後,***表面沿 著靶件/底板介面(連結作用則將產生於該靶件/底板的 介面中)而被安置成與組件之其他構件的匹配表面(該匹 配表面具有被適宜定位的匹配構件)倂排。 介面表面組件的周圍部位是藉由例如是電子束熔接' TIG熔接、摩擦熔接、軟焊、硬焊等以在真空狀況下作動 之傳統方式而被連結。隨後,該組件在低溫(以是室溫爲 較適宜)下被壓入配合。 沿著靶件或底板成形之凸出部位或***部位會沿著靶 件/底板介面而被***至匹配構件內。上述之凸出部位則 會被***至位於對置之匹配表面上的溝槽內。 該凸出部位和溝槽具有不同的尺寸大小,使得凸出部 位***至溝槽內時,一作用力或是摩擦配合接頭將可以成 形。 從以下描述內容、隨附圖形和相關申請專利範圍的內 容中’可以淸楚地得知本項發明之其他目的和優點。 經濟部智慧財產局員工消費合作社印製 圖式簡單說明: 圖1爲一靶件和底板組件的槪略橫剖面視圖,其中表 不出形式爲即將***至圓柱形內孔中之圓柱形公接頭的摩 擦配合連結機構; 圖2爲表示出連結構件之另〜實施例的槪略橫剖面視 4 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — 483793 A7 B7 五、發明說明(々) 圖,在該連結構件之一構件內具有正方形公接頭’而且相 對應之正方形母接頭成形於另一構件內; 圖3爲如圖1所示之組件在匹配或連結位置處的槪略 橫剖面視圖; 圖4爲如圖2所示之組件在匹配或連結位置處的槪略 橫剖面視圖; 圖5爲如圖1所示之組件在結合之前的部份分解立體 視圖,以及 圖6爲如圖2所示之組件在結合之前的部份分解立體 視圖。‘ 元件符號說明: 2.革巴件 4.底板 6.塡隙材料 8.公接頭 9.母內孔構件/正方形凹口 1L底部側邊/表面 13.頂端側邊 21.底部側邊 23.頂端側邊 25.周圍邊界 28.介面表面區域 30.母接頭 經濟部智慧財產局員工消費合作社印製 較佳實施例詳細說明: 首先參考圖1,其中表示出一種靶件/底板組件。此 組件包含一個具有一頂端側邊23的靶件2,該頂端側邊則 依照傳統式濺鍍加工方法來承載金屬或金屬合金,此金屬 或金屬合金將可藉由離子撞擊之作用而從祀件中被排出, 5 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 483793 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(αΟ 而且將會產生運動和包覆住所需的基板。 一個底板4被提供於靶件的下方,其中靶件的底部側 邊11被用來匹配底板的頂端側邊13,用以界定出一個介 面表面區域28。例如是水的熱交換流體通常會鄰接於底板 的底部側邊21而被加以循環,用以在組件產生濺鍍加工作 用時冷卻該組件。 如圖1實施例之所示,若千個圓柱形公接頭8被機械 加工至表面11內。表面13則被提供有直徑尺寸小於公接 頭8之直徑尺寸的圓柱形母內孔構件9。 在某^應用實例中,必須於在靶件與底板間之組件周 圍邊界25的附近提供一個型式爲環或其他類似形狀的塡隙 材料6,此塡隙材料例如可以是鋁4%矽合金或其他適宜的 合金。如同將於下文中描述之內容,該塡隙材料6可以加 強靶件與底板的結合狀況。 上述之組件首先是沿著周圍邊界25而被結合。此項沿 著組件之周圍邊界的起始結合狀況是藉由例如是在真空情 況下之電子束熔接、電弧熔接,以及摩擦熔接與其他類似 熔接方法的傳統結合方式而得到。靶件和底板之周圍邊界 的結合則以是藉由在真空狀況下施行電子束熔接而得到爲 較適宜。 當周圍邊界完成結合之後,組件會經由在低溫狀況下 施加大約在50噸到5000噸大小的壓力予以固結;所施加 的壓力大小以是小於大約1000噸爲較適宜。公接頭8則以 摩擦配合之方式被壓入至相對應的母內孔9內。 6 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) - - _線· 483793 A7 B7 五、發明說明(、> ) (請先閱讀背面之注意事項再填寫本頁) 在低溫壓力的固結作用完成之後,組件會承受到一種 在大約室溫到400°C之溫度下施行〇·5到4小時期間的低溫 退火步驟。此項低溫退火作用則有助於確保以壓力來固結 之表面得到適宜的附著力。 “低溫壓力固結作用”一詞表示該壓力固結作用係發 生於溫度小於大約靶件和底板下側熔化構件之熔點的50% 之狀況下,此溫度以是小於大約200°C爲較適宜;而是以 在大約室溫到大約38°C爲最適宜。 在此參考圖2,圖形表示出本項發明之另一實施例, 其中靶件和底板可以藉由低溫壓力固結作用而被連結在一 起。此時,型式爲加長正方形橫剖面構件的公接頭8會被 壓入配合至成形於底板4的正方形凹口 9內。 圖3和圖4分別表示出如圖1和圖2所示之組件是在 其個別不同的匹配位置處,其中藉由低溫壓力固結的作用 ,往外突出的公構件是以摩擦配合之方式被壓入至與其相 匹配的母接頭內,而且靶件與底板則是以此方式被結合在 一起。 經濟部智慧財產局員工消費合作社印製 圖5以立體圖方式來表不出如圖1實施例所示的公、 母耦合構件。型式爲一圓柱形類似定位銷之突出部位的公 構件8被用來匹配圓柱形內孔9。此內孔9的內徑(id)小 於往外突出之公構件8的外徑(od)。如圖之所示,公構 件8與內孔9是以被配置成同心環狀陣列之型式而相互結 合在一起。 圖6表不出如圖2實施例所不之公/母匹配構件。在 7 本#氏張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 483793 A7 ___ B7 五、發明說明(卩) 此,型式爲加長正方形橫剖面之短柱的公構件8被用來插 入至直徑較小的開口 9內。 在一項依照本項發明之靶件/底板組件的結合方式中 ,矩形橫剖面的公突出部位被採用,而且此公突出部位則 是以摩擦配合之方式被接合至相對應的矩形母開口內。上 述之靶件和底板均爲銅質材料,而且母開口的尺寸要比公 構件小大約0.010吋。公、母構件是被機械加工至不同的 表面上。靶件/底板組件會受到壓力的作用,使得公、母 耦合構件能夠被摩擦配合。在受到壓力的作用之後,該組 件的周圍部位是藉由電子束之作用而被熔接在一起。在此 熔接處理的步驟完成之後,一項最終機械加工程序會被施 行,使得已被熔接的區域無法被移開。 於是’本項發明之鎖緊接頭可以被描述成是一種由一 往外突出之公構件和一相對應之母開口所共同組成的摩擦 配合接頭,其中該往外突出的公構件被配置於一構件上, 該母開口則被成形於另一構件上。 經濟部智慧財產局員工消費合作社印製 雖然在此所描述之方法,以及依照此方法所製造之靶 件/底板組件已被描述成是具有某些特定的型式和具有部 份修改過內容,但是値得注意之處是在不偏離隨附申請專 利範圍所界定之本項發明範疇和精神的狀況下,可以針對 本項發明做更廣泛的其他不同修改。另外,在此對於金屬 或金屬元件的參考內容亦包含有針對先前所描述之金屬合 金型式的參考內容。 雖然銅與銅的結合作用特別被提及,但是其他種類的 _____ 8 ^紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 483793 A7 _______B7 五、發明說明(Ί ) 不同金屬亦可被應用於本項發明中。舉例而言,鋁質靶件 和鋁質底板可以使用在此所揭示之方法而被結合在一起。 其他種類的靶件與底板組合方式亦可以提供類似之金屬機 械特性(例如是硬度和熱膨脹性)。 本項發明所提供之優點超過擴散結合方法和需要以較 高溫度來固結的其他不同結合技巧。較高溫度的狀況有時 會導致在靶件金屬內產生不必要之晶粒生長。 經濟部智慧財產局員工消費合作社印製 9 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公复)483793 A7 B7 V. Description of the Invention (I) This invention relates to the connection skills of the target / base plate of a low-temperature sputtering machine and the related components that are manufactured accordingly. A target and a base plate are provided in US Provisional Patent Applications 60 / 099,981 (filed on September 11, 1998) and 60 / 129,559 (filed on April 16, 1999), owned by the applicant of this invention. The harder materials of the two parts are machined or otherwise formed to have a plurality of raised parts or other surface protruding parts on the two parts. These raised portions or protruding portions are formed along the inner surface of the target or the bottom plate. Subsequently, the raised surface is arranged along the target / bottom interface (the connection effect will be generated in the target / bottom interface) to be aligned with the matching surface of the other components of the module. The peripheral parts of the interface surface component used to surround the raised part or the protruding part are under vacuum conditions by, for example, electron beam welding, T1G (tungsten inert gas protection) welding, friction welding, soldering, brazing, etc. The traditional way of action is linked. Subsequently, the component is press-fitted at a low temperature, preferably at room temperature. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When the protruding part or bulging part formed along the target or the bottom plate is inserted into the matching metal surface along the target / bottom interface, the protruding part or The raised part will be bent, and an interlocking gripping member is formed above the softer metal of the opposite matching surface. Brief description of the invention: In this invention, a target and a base plate are provided, in which the mechanical properties of the materials of the two components are similar, and the materials are either machined or applied to the Chinese National Standard (CNS) A4 on their 3 ^ paper scale. Specifications (210 X 297 Gongchu) 483793 A7 B7 V. Description of the invention (>) It is shaped in other ways and used to have several raised parts and grooves or other surface protruding parts on the two parts. These raised portions or protruding portions are formed along the inner surface of the target or the bottom plate. Subsequently, the raised surface is placed along the target / bottom interface (the connection effect will be generated in the target / bottom interface) to be a mating surface with other components of the module (the mating surface has a matching member that is appropriately positioned) ) Row. The peripheral parts of the interface surface components are connected by a conventional method such as electron beam welding, TIG welding, friction welding, soldering, brazing, and the like operating in a vacuum state. The assembly is then press-fitted at a low temperature, preferably room temperature. Protruding or raised portions formed along the target or base plate are inserted into the matching member along the target / base plate interface. The above-mentioned protruding parts are inserted into the grooves on the opposite matching surfaces. The protruding portion and the groove have different sizes, so that when the protruding portion is inserted into the groove, a force or a friction fit joint can be formed. Other objects and advantages of this invention can be clearly understood from the following description, the accompanying drawings and the scope of the related patent application. Brief description of the printed drawings of the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: Figure 1 is a schematic cross-sectional view of a target and a bottom plate assembly, which does not show a cylindrical male connector that is to be inserted into a cylindrical inner hole Figure 2 is a schematic cross-sectional view showing another ~ embodiment of the connecting member. 4 The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) — 483793 A7 B7 V. Description of the invention (々) A diagram in which one of the connecting members has a square male connector 'and a corresponding square female connector is formed in the other member; FIG. 3 shows the components shown in FIG. 1 at the matching or connecting position FIG. 4 is a schematic cross-sectional view of the components shown in FIG. 2 at the matching or connection position; FIG. 5 is a partially exploded perspective view of the components shown in FIG. 1 before being combined, And FIG. 6 is a partially exploded perspective view of the components shown in FIG. 2 before being combined. 'Component symbol description: 2. Leather parts 4. Base plate 6. Gap material 8. Male joint 9. Female inner hole member / square notch 1L bottom side / surface 13. Top side 21. Bottom side 23. Top side 25. Peripheral boundary 28. Interface surface area 30. Female connector Printed by the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Detailed description of the preferred embodiment: Referring first to FIG. 1, a target / bottom plate assembly is shown. This component includes a target 2 with a top side 23, which is used to carry a metal or metal alloy in accordance with a conventional sputtering process. The metal or metal alloy can be sacrificed by ion impact. 5 paper sizes were applied in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 483793 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy A base plate 4 is covered. A bottom plate 4 is provided below the target, wherein the bottom side 11 of the target is used to match the top side 13 of the bottom plate to define an interface surface area 28. For example, water The heat exchange fluid is usually circulated adjacent to the bottom side 21 of the bottom plate to cool the component when the component is sputtered. As shown in the embodiment of FIG. 1, if there are thousands of cylindrical male joints 8 Is machined into the surface 11. The surface 13 is provided with a cylindrical female bore member 9 having a diameter smaller than that of the male joint 8. In a certain application example, the A gap material 6 in the form of a ring or other similar shape is provided near the peripheral boundary 25 of the components between the plates. The gap material may be, for example, aluminum 4% silicon alloy or other suitable alloy. As will be described later The gap material 6 can strengthen the combination of the target and the base plate. The above-mentioned components are first bonded along the peripheral boundary 25. The initial bonding condition of this item along the peripheral boundary of the component is, for example, under vacuum In the case, electron beam welding, arc welding, and friction welding are conventionally combined with other similar welding methods. The combination of the target and the surrounding boundary of the base plate is obtained by performing electron beam welding under vacuum. When the surrounding boundary is completed, the component will be consolidated by applying a pressure of about 50 to 5,000 tons at a low temperature; the applied pressure is preferably less than about 1,000 tons. Male joint 8 Then it is pressed into the corresponding female inner hole 9 by friction fit. 6 This paper size applies the Chinese National Standard (CNS) A4 specification (2 10 X 297 mm) (Please read the precautions on the back before filling this page)--_ line · 483793 A7 B7 V. Description of the invention (, >) (Please read the precautions on the back before filling this page) at After the consolidation under low temperature pressure is completed, the module will be subjected to a low temperature annealing step performed at a temperature of about room temperature to 400 ° C for a period of 0.5 to 4 hours. This low temperature annealing effect helps to ensure the pressure The surface to be consolidated has a suitable adhesion. The term "low temperature pressure consolidation" means that the pressure consolidation occurs at a temperature of less than about 50% of the melting point of the target and the melting member on the underside of the base plate. The temperature is preferably less than about 200 ° C; most preferably, it is about room temperature to about 38 ° C. Referring to FIG. 2 here, another embodiment of the present invention is shown graphically, in which the target and the bottom plate can be joined together by low temperature pressure consolidation. At this time, the male joint 8 of the type having an elongated square cross-section member is press-fitted into the square recess 9 formed in the bottom plate 4. Figures 3 and 4 respectively show that the components shown in Figures 1 and 2 are at their respective different matching positions, in which the male components protruding outwards are frictionally fitted by the action of low-temperature pressure consolidation. It is pressed into the matching female connector, and the target and the base plate are combined together in this way. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 5 shows the male and female coupling components shown in the embodiment of Figure 1 in a perspective view. A male member 8 in the form of a cylindrical projection similar to a positioning pin is used to fit the cylindrical inner hole 9. The inner diameter (id) of this inner hole 9 is smaller than the outer diameter (od) of the male member 8 protruding outward. As shown in the figure, the male member 8 and the inner hole 9 are combined with each other in a pattern arranged in a concentric annular array. FIG. 6 does not show a male / female matching member as shown in the embodiment of FIG. 2. At 7 # scales, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied. 483793 A7 ___ B7 V. Description of the invention (卩) Herein, the male member 8 is a short column with a long square cross section. For insertion into a small-diameter opening 9. In a combination of the target / base plate assembly according to the present invention, a male protruding portion of a rectangular cross section is used, and the male protruding portion is joined into the corresponding rectangular female opening by a friction fit. . The target and base plate mentioned above are made of copper, and the size of the female opening is about 0.010 inches smaller than that of the male component. The male and female components are machined to different surfaces. The target / base plate assembly is subjected to pressure, which enables the male and female coupling members to be friction-fitted. After the pressure is applied, the peripheral parts of the component are welded together by the action of an electron beam. After the steps of this welding process are completed, a final machining process is performed so that the areas that have been welded cannot be removed. Thus, the locking joint of this invention can be described as a friction-fit joint composed of a male member protruding outward and a corresponding female opening, wherein the male member protruding outward is arranged on a member The female opening is formed on another member. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, although the method described here, and the target / base plate assembly manufactured according to this method have been described as having certain specific types and with some modified content, but It should be noted that, without departing from the scope and spirit of the invention as defined by the scope of the attached patent application, a wide range of other different modifications can be made to the invention. In addition, the references to metals or metal components here also include references to the types of metal alloys described previously. Although the combination effect of copper and copper is mentioned in particular, other types of ___ 8 ^ paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 483793 A7 _______B7 5. Description of the invention (Ί) Different metals It can also be applied to this invention. For example, an aluminum target and an aluminum base plate can be combined using the methods disclosed herein. Other types of target and base plate combinations can provide similar metal mechanical properties (such as hardness and thermal expansion). This invention provides advantages over diffusion bonding methods and other different bonding techniques that require consolidation at higher temperatures. Higher temperature conditions can sometimes cause unwanted grain growth in the target metal. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 9 This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 public copy)

Claims (1)

483793 乂<?年1>月483793 乂 <? Year 1 > month 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 1. 一種用於沿著靶件和底板之匹配表面來結合該靶件與底 板的改良式方法,在一種準備一完成結合之濺鍍機靶件/ 底板組件的方法中,包含有一由即將被濺鍍之金屬或合金 所組成的靶件和一位於下側的金屬底板構件,該改良式方 法包含有下列步驟: (a) 在至少一個該匹配表面上成形若干個往外突出的公 接頭,而且在該另一該匹配表面上成形若干個母接頭; (b) 將該靶件和底板安置成彼此^互鄰接,用以成形一 個具有一由該匹配表面所界定之介面的組件; (c) 在低溫之狀況下以壓力來固結該組件,使得該公接 頭能夠以摩擦配合之方式被***至該母接頭內。 2·如申請專利範圍第1項之方法,包含有結合該組件 之接近該組件之周圍邊界處的額外步驟(d)。 3·如申請專利範圍第2項之方法,其中該步驟(d)是 在該步驟(b)之後和該步驟(c)之前被加以施行。 4·如申請專利範圍第3項之方法,其中該步驟(d)包 含有該組件的電子束熔接。 / 5·如申§轉利範圍第4 I股方法,其中該步驟(d)進 -步包含娜—可熔接_隙材料插人至關件與該底板 間接近該周圍邊界之處。 6·如申請專糊S第2,其帽频⑷包 含有摩擦熔接。 7·如申請賴麵第2,其巾該頻(d)包 含有TIG熔接。 本紙張尺度適用中國國家標準(CNS)A4規格(210 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 483793 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 8.如申請專利範圍第6項之方法,其中該靶件包含有 銅。 9·如申請專利範圍第2項之方法,其中該步驟(d)包 含有沿著一位置鄰接該周圍邊界之環狀區域而以電子束熔 接該靶件。 1〇·如申請專利範圍第1項之方法,其中該步驟(c) 包含有在大約室溫下,以壓力來固結該組件。 11.如申請專利範圍第2項之方法,其進一步包含有在 低溫下將該以壓力固結之組件予以退火的步驟(e)。 12·二i用於沿著一平面來將一濺鍍機靶件結合至一底 板構件的方法,該平面則是由該靶件和底板之匹配介面表 面所界定,該方法包含有下列步驟: (a) 在一個該介面表面上成形若干個往外突出的公接頭 ,及在該另一該匹配表面上成形若干個母接頭; (b) 將該靶件和底板安置於一個待以該等彼吐相百鄰榇 之介面表面而結合在一起的位置處:以及 (c) 在溫度篮於該靶件和該底板虫篮篮熔默構件之熔點 大約50%之下,及在所施加的壓力大小足以將該公接頭壓 入皇合至該母接頭內之」H,以壓力來固結該靶件和底板。 13.如申請專利範圍第12項之方法,其中該步驟(c) 是在溫度篮於200°C之狀況下被施行。 14·如申請專利範圍第13項之方法,其中該步驟(c) 是在溫度脸於大約38°C之狀況下被施行。 15·如申請專利範圍第14項之方法,其中該步驟(c) 2 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------------------^--------- (請先閱讀背面之注意事項再填寫本頁) §88 §88 經濟部智慧財產局員工消費合作社印製 483793 _g___ 六、申請專利範圍 是在溫度是在大約室溫下被施行。 16.如申請專利範圍第15項之方法,其中該祀件是銅 或銅合金。 17·如申請專利範圍第15項之方法,在該步驟(〇之 前,其進一步包含有一個用於結合該靶件和底板構件之:沿 著該蔓匹配介面表面之周圍邊界部位處的步驟(d)。 18. 如申請專利範圍第17項之方法,其中該步驟(d) 包含有將一可熔接的塡隙材料***ΐ該靶件與該底板間沿 著該周圍邊界之處。 19. 如申請專利範圍第17項之方法,其中該步驟(d) 包含有電子束熔接。 20· —種以申請專利節圍竿1至19項中任何一項之方: 法所製成之靶件/底板組件。 21. —種包含有一濺鍍機IR件和底板的組合,該靶件和 底板沿著一個由各匹配介面表面所界定之平面而被匹配在 一起,若干個往外突出的公接頭成形於一個該介面表面上 ,而且若千個相匹配的母接頭則成形於另一該介面表面上 ,該公接頭能夠被皇合至該母接頭內。 22. 如申請專利範圍第21項之組合,其進一步包含有 一個沿著該蔓匹配表面而歷HJS繞著該公接頭與母接頭 的周圍區域,以及一被安置於該周圍區域內的可熔接塡隙 材料。 23. 如申請專利範圍第21項之組合,其中該靶件包含 有銅。 3 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) --------------------訂---- (請先閱讀背面之注意事項再填寫本頁) 483793 A8 B8 C8 D8 六、申請專利範圍 24.如申請專利範圍第21項之組合,其中該靶件包含 有銘 ------------餐--------tr---------$ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of Patent Application 1. An improved method for combining the target and the base plate along the matching surface of the target and the base plate. The combined sputtering target / base plate assembly method includes a target consisting of a metal or alloy to be sputtered and a metal base plate member on the lower side. The improved method includes the following steps: ( a) forming a plurality of outwardly protruding male joints on at least one of the matching surfaces, and forming a plurality of female joints on the other matching surface; (b) placing the target and the base plate adjacent to each other, using To form a component having an interface defined by the mating surface; (c) compressing the component under pressure at a low temperature so that the male connector can be inserted into the female connector in a friction fit manner. 2. The method according to item 1 of the scope of patent application, comprising the additional step (d) of combining the component near the peripheral boundary of the component. 3. The method according to item 2 of the patent application range, wherein the step (d) is performed after the step (b) and before the step (c). 4. The method according to item 3 of the scope of patent application, wherein step (d) includes electron beam welding including the module. / 5. Rushen § No. 4 I-share conversion method, in which step (d) further includes the step of inserting a fused-gap material to the place close to the peripheral boundary between the member and the base plate. 6. If you apply for S2, the cap frequency package contains friction welding. 7. If applying for No.2, the towel (d) contains TIG welding. This paper size applies to China National Standard (CNS) A4 specifications (210 -------------------- Order --------- line (please read the back first) Please note this page, please fill in this page again) 483793 A8 B8 C8 D8 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of Patent Application 8. If the method of the 6th scope of patent application is applied, the target contains copper. For example, the method of claim 2 in the patent application, wherein the step (d) includes welding the target by electron beam along a ring-shaped area adjacent to the peripheral boundary at a position. A method, wherein the step (c) comprises consolidating the component under pressure at about room temperature. 11. The method according to item 2 of the patent application scope, further comprising consolidating the component under pressure at a low temperature. Step (e) of annealing the component. 12. · 2i A method for bonding a sputtering machine target to a base plate member along a plane, which is formed by the matching interface surface of the target and the base plate. Definition, the method includes the following steps: (a) forming a plurality of contacts on a surface of the interface; Protruding male joints, and forming several female joints on the other matching surface; (b) placing the target and the base plate on an interface surface to be adjacent to each other Position: and (c) the temperature basket is below the melting point of the target and the bottom plate worm basket basket melting member of about 50%, and the pressure is sufficient to press the male connector into the Huanghe to the The “H” in the female connector is used to consolidate the target and the bottom plate with pressure. 13. The method according to item 12 of the patent application, wherein step (c) is performed under a temperature basket of 200 ° C. 14. The method according to item 13 of the patent application, wherein step (c) is performed at a temperature of approximately 38 ° C. 15. The method according to item 14 of the patent application, wherein the step (c ) 2 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------- ^ -------- -(Please read the precautions on the back before filling out this page) §88 §88 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 483793 _g___ The temperature is applied at a temperature of about room temperature. 16. The method according to item 15 of the patent application, wherein the target is copper or copper alloy. 17. The method according to item 15 of the patent application, in this step (Before, it further includes a step (d) for combining the target and the bottom plate member at a peripheral boundary portion along the surface of the manifold matching interface. 18. If the method of the 17th scope of the patent application, The step (d) includes inserting a fusible gap material along the peripheral boundary between the target and the bottom plate. 19. The method according to item 17 of the patent application, wherein step (d) includes electron beam welding. 20 · —A method of applying any one of the sections 1 to 19 of the patent application section: the target / base plate assembly made by the method. 21. A type comprising a combination of a sputtering machine IR part and a base plate, the target and the base plate are matched together along a plane defined by the surface of each matching interface, and a plurality of outwardly protruding male joints are formed in one On the interface surface, and if a thousand matching female connectors are formed on another interface surface, the male connector can be fitted into the female connector. 22. For example, the combination of the scope of the patent application No. 21, further comprising an area surrounding the male connector and the female connector by HJS along the matching surface of the vine, and a fusible joint disposed in the surrounding area. Gap material. 23. The combination of claim 21, wherein the target comprises copper. 3 This paper size is applicable to China National Standard (CNS) A4 (21〇x 297mm) -------------------- Order ---- (Please read first Note on the back, please fill out this page again) 483793 A8 B8 C8 D8 VI. Application for patent scope 24. If the combination of patent application scope item 21, where the target contains the inscription ------------ meal -------- tr --------- $ (Please read the notes on the back before filling out this page) The paper size printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies this national paper standard ( CNS) A4 size (210 X 297 mm)
TW089113506A 1999-07-12 2000-07-07 Friction fit target assembly TW483793B (en)

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WO2002047865A1 (en) * 2000-12-15 2002-06-20 Tosoh Smd, Inc. Friction fit target assembly for high power sputtering operation
WO2004024972A2 (en) * 2002-09-13 2004-03-25 Tosoh Smd, Inc. Systems and methods for a target and backing plate assembly
JP4706926B2 (en) * 2006-03-17 2011-06-22 三菱マテリアル株式会社 Method for manufacturing target with backing plate
WO2009018194A1 (en) 2007-08-02 2009-02-05 Dow Global Technologies Inc. Thermoset dampener material
US8702919B2 (en) 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
US20100089748A1 (en) * 2008-10-15 2010-04-15 C Forster John Control of erosion profile on a dielectric rf sputter target
CN104646817A (en) * 2014-12-22 2015-05-27 有研亿金新材料有限公司 Connection method of aluminum target material as sputtering target material and aluminum alloy backboard

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JPS5236373A (en) * 1975-09-17 1977-03-19 Hitachi Ltd Automtaic insertion method of articles
US5009765A (en) 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
US5143590A (en) * 1991-07-10 1992-09-01 Johnson Matthey Inc. Method of manufacturing sputtering target assembly
US5269899A (en) 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same

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