TW479388B - Automatic fluorine control system - Google Patents

Automatic fluorine control system Download PDF

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TW479388B
TW479388B TW089115611A TW89115611A TW479388B TW 479388 B TW479388 B TW 479388B TW 089115611 A TW089115611 A TW 089115611A TW 89115611 A TW89115611 A TW 89115611A TW 479388 B TW479388 B TW 479388B
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Taiwan
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fluorine
laser
gas
patent application
item
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TW089115611A
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Chinese (zh)
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Mengxiong Gong
Jason R Carlesi
Michael C Binder
Palash P Das
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Cymer Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An excimer laser system with an automatic fluorine control system to permit precise control of the fluorine concentration within an F2 ""sweet spot"" in a gas discharge laser chamber. This is done with a computer control system which monitors laser parameters, determines ΔE/ΔV, the change of pulse energy with voltage, and automatically and precisely controls the fluorine concentration based on ΔE/ΔV without the need to actually measure the fluorine concentration.

Description

479388 經濟部智慧財產局員工消費合作社印製 A7 ----—__B7__-____ 五、發明說明（i ) 本案為專利申請案第〇9/016,525號，申請日⑽時！ 月30日，名稱「幾公子雷射之氣控制系統以及申請案第 09/034,870號，φ 士主 p 1 〇〇〇 &amp;， 览曱°月日1998年3月4日，名稱「準分子雷射 之祕’此按制丨之部份連續案。本發明係關於準分子雷射 ’特別係關於於準分子雷射控制雷射氣體之設備及方法。 發明背景 準分子雷射為眾所周知。準分子雷射的一大用途係 提供積體電從光刻術的光源。目前以相當量用於積體電路 光刻術之準分子雷射類型為雷射，產生波長248毫微 米之紫外光。類似的準分子雷射以及ArF當射提供I%毫 微米之紫外光。此等雷射典型係以脈衝模式於脈衝速率例 如]，〇〇〇赫至七〇〇〇赫。雷射束係於雷射腔室產生，腔室含 有經由雷射氣體於二細長電極間放電形成的增益中質，二 電極長約28忖且分開約5/8忖。放電係藉施加高電壓例如 約20,000伏跨電極產生。用於KrF雷射，雷射氣體典型為 約1%氪，0.1%氟及約99%氖。用於ArF雷射，氣體典型為 約3至4%氬，〇」％氟及96至97%氖。二例中，為了達成約 1，000赫1_&lt;〇Ό〇赫的高脈衝速率，氣體必須以每秒約5〇〇 至2,000吋速度介於電極間循環。 敗為目前已知最具反應性的元素，氟於放電期間變 成游離時甚至反應性更高。須特別小心用於此等雷射腔室 材料，例如鎳塗裝鋁其可與氟合理地相容。進一步雷射腔 室以氟前處理而於雷射腔室壁内側上形成鈍化層。但即使 特別小心，氟仍與側壁以及其它雷射組件反應結果造成敗 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 J—〔—&gt;—X—--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 479388479388 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ----—__ B7 __-____ V. Description of the Invention (i) This case is Patent Application No. 09 / 016,525, and the application date is too late! On the 30th, the name "Guikozi Laser Gas Control System and Application No. 09 / 034,870, φ Master p 1 00 &", dated March 4, 1998, the name "excimer The "secret of lasers" is part of a series of cases. The present invention relates to excimer lasers, and more particularly to devices and methods for controlling laser gas with excimer lasers. BACKGROUND OF THE INVENTION Excimer lasers are well known. One of the major uses of excimer lasers is to provide integrated light sources for photolithography. At present, a considerable amount of excimer lasers used in integrated circuit lithography are lasers, which generate ultraviolet light with a wavelength of 248 nm. Similar excimer lasers and ArF lasers provide 1% nanometers of ultraviolet light. These lasers are typically pulsed at a pulse rate, for example], 1000 Hz to 7000 Hz. Laser beam systems It is generated in a laser chamber. The chamber contains a gain medium formed by the discharge of laser gas between two slender electrodes. The two electrodes are about 28 忖 apart and about 5/8 忖 apart. The discharge is by applying a high voltage, such as about 20,000 volts. Trans-electrode generation. For KrF laser, laser gas typical From about 1% krypton, 0.1% fluorine and about 99% neon. ArF laser is used, the gas is typically about 3 to 4% argon, square "% fluorine and 96 to 97% neon. In two cases, in order to achieve a high pulse rate of about 1,000 Hz 1 <0,0 Hz, the gas must be circulated between the electrodes at a speed of about 500 to 2,000 inches per second. It is currently the most reactive element known, and even more reactive when fluorine becomes free during discharge. Special care must be taken with these laser chamber materials, such as nickel-coated aluminum, which are reasonably compatible with fluorine. Further, the laser chamber is pre-treated with fluorine to form a passivation layer on the inside of the laser chamber wall. But even if you take special care, the fluorine still reacts with the side walls and other laser components to cause failure. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 4 J — [— &gt; —X —--- ----- Order --------- Line (Please read the precautions on the back before filling this page) 479388

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

相當定期被耗盡。耗用的速率依據多種因素決定，但對某 種指定雷射而言係於其有用壽命的特定時間，耗用速率主 要係依據雷射操作時的脈衝速率以及負載因數決定。若雷 射未操作，則耗用速率實質上降低。若氣體未循環，則耗 用速率更進一步減低。為了彌補此種耗用，典型係以約i 至3小時間隔注入新氟。替代注入純氟，典型係於KrF雷 射注入1%氟，1%氪及98%氖之混合物。例如於典型用於 光刻術的⑺⑻赫KrF準分子雷射，注入用以補償氟耗盡的 鼠、乳、氖混合物之用量係由雷射未操作而雷射氣體未循 裱時之約每小時1 〇 scc至雷射以丨〇〇〇赫連續運轉時的每小 時約500 scc。當腔室風扇循環雷射氣體但雷射未點燃時 ’典型注入速率為約每小時12〇 scc。 「scc」單位表示「標準立方厘米」。其它常用以描述 特定容積氟用量的單位有氟百分比（％)，每百萬份份數 (ppm)及千巴斯卡；後者偶爾表示氟氣體混合物分壓（原因 在於氟注入雷射腔室之量典型（直接或間接）係由注入1%氟 氣體混合物時測得的腔室壓力增高決定）。丨％氟氣體混合 物使用每小時320 see注入速率相當於氟濃度經2小時時間 由約0.10%耗用而降至約0·087%。以純氟克數測量氟於2 小時的實際耗用量於2小日寺時間約10毫克，對應於高於32〇 SCC/小日守氟氣體混合物注入速率（亦即2小時間隔時間注入 640 see 1 %氟氣體混合物）。 用於積體電路光刻術，典型操作模式要求具有恆定 脈衝能之雷射脈衝，例如1〇毫焦/脈衝於約1〇〇〇赫至4〇〇〇 ^--------^---------^ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度綱巾關家標準（(JNSM4規格（210 X 297公爱了Depleted quite regularly. The rate of consumption is determined by a variety of factors, but for a given laser is a specific time of its useful life. The rate of consumption is mainly determined by the pulse rate and load factor during laser operation. If the laser is not operating, the rate of consumption is substantially reduced. If the gas is not circulated, the rate of consumption is further reduced. To compensate for this consumption, new fluorine is typically injected at intervals of about i to 3 hours. Instead of injecting pure fluorine, a KrF laser is typically injected with a mixture of 1% fluorine, 1% samarium, and 98% neon. For example, in typical KrF excimer lasers used for photolithography, the amount of mouse, milk, and neon mixture injected to compensate for the depletion of fluorine is about every time when the laser is not operated and the laser gas is not mounted. From about 10 scc per hour to about 500 scc per hour when the laser is continuously operated at 1000 Hz. When the chamber fan circulates laser gas but the laser is not ignited, the typical injection rate is about 12 scc per hour. "Scc" unit means "standard cubic centimeter". Other commonly used units to describe the specific volume of fluorine used are fluorine percentage (%), parts per million (ppm), and kilobasca; the latter occasionally indicates the partial pressure of the fluorine gas mixture (the reason is that fluorine is injected into the laser chamber). The amount is typically (directly or indirectly) determined by the increase in chamber pressure measured when injecting a 1% fluorine gas mixture). The injection rate of 丨% fluorine gas mixture at 320 sees per hour is equivalent to the reduction of the fluorine concentration from about 0.10% to about 0.087% over a period of 2 hours. The actual consumption of fluorine in 2 hours measured in grams of pure fluorine is about 10 mg at 2 Koriji time, corresponding to an injection rate higher than 32 SCC / Oriori fluorine gas mixture (that is, 640 at 2-hour intervals) see 1% fluorine gas mixture). For integrated circuit lithography, a typical operating mode requires a laser pulse with a constant pulse energy, such as 10 mJ / pulse at about 1000 Hz to 4,000 ^ -------- ^ --------- ^ (Please read the precautions on the back before filling out this page) This paper standard outlines the family standard ((JNSM4 specifications (210 X 297)

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

---_ ,以叢發例如約300脈衝（於！，〇〇〇赫之維持時間約3〇〇毫秒） 外加至晶圓，各叢發間的無效時間為數分之一秒至數秒。 操作模式可每日連續24小時，每週連續7日經歷數個月， 排程停機時間進行維修，例如每週一次或每兩週一次停機 8小枯。因此此等雷射極為可靠且實質上不易故障。 典型用於光刻術之KrF及ArF準分子雷射，於氟濃度 約〇·〇8%(800份/百萬或約24千巴斯卡氟氣體雷射分壓）至 、、勺〇·12/。（ 1,200伤/百萬或約36千巴斯卡）之實質範圍可獲得 高品質可重複再現的脈衝，具有預定脈衝能約1〇毫焦/脈 衝。於正常雷射操作範圍，產生預定脈衝能要求的放電電 壓隨著氟濃度的增加而升高（假定其它雷射參數保持約略 I4亙疋）。第1圖顯示對1 〇毫焦及i 4毫焦之恆定脈衝能，放電 電壓與氟濃度間之典型關係。15千伏至2〇千伏之放電電壓 典型係藉回授系統控制，回授系統計算產生預定雷射脈衝 能所需放電電壓（於脈衝壓縮_放大電路）需要的充電電壓（ 約550伏至800伏之範圍）’放電電壓粗略與充電電壓成比 例。因此回授電路送出550伏至8〇0伏）之「指令電壓」信 號給電源供應器提供充電電壓脈衝。 先前技術典型係利用放電t壓與氟濃度間的關嚕來 維、持恆定脈衝能而與氟的連績耗用無關。先前技術準分子 雷射之放電電壓可極為快速準確地改變，且可以電子回授 控制而維持恆定脈衝能。過去證實準砣精密地控制氟濃度 相當困難。因此於典型先前技術KrF及八叩雷射系統，允 許氟濃度降低經歷約1至4或5小時時間，此時充電電壓係---_ It is applied to the wafer in bursts of, for example, about 300 pulses (maintaining time of about 3,000 Hz), and the invalid time between bursts is a fraction of a second to a few seconds. The operating mode can be 24 hours a day, 7 months a week for several months, and scheduled downtime for maintenance, such as once a week or once every two weeks for 8 hours. These lasers are therefore extremely reliable and substantially less prone to failure. KrF and ArF excimer lasers, typically used in photolithography, have a fluorine concentration of about 0.08% (800 parts per million or about 24 thousand Baska fluorine gas laser partial pressures) to 、, 勺. 12 /. (1,200 wounds / million or about 36 thousand bascars) for a substantial range of high-quality, reproducible pulses with a predetermined pulse energy of about 10 mJ / pulse. In the normal laser operating range, the discharge voltage required to generate a predetermined pulse energy increases with increasing fluorine concentration (assuming other laser parameters remain approximately I4 亘 疋). Figure 1 shows the typical relationship between the discharge voltage and the fluorine concentration for a constant pulse energy of 10 mJ and i 4 mJ. The discharge voltage of 15 kV to 20 kV is typically controlled by the feedback system. The feedback system calculates the charging voltage (about 550V to 800 volt range) 'The discharge voltage is roughly proportional to the charge voltage. Therefore, the feedback circuit sends a "command voltage" signal of 550 volts to 8000 volts to provide a charging voltage pulse to the power supply. The prior art typically uses the relationship between discharge t-pressure and fluorine concentration to maintain a constant pulse energy regardless of the continuous consumption of fluorine. The discharge voltage of the prior art excimer laser can be changed very quickly and accurately, and it can be controlled by electronic feedback to maintain a constant pulse energy. In the past, it has proven difficult to accurately control the fluorine concentration. Therefore, in typical prior art KrF and Hachiman laser systems, the reduction of fluorine concentration is allowed to take about 1 to 4 or 5 hours. At this time, the charging voltage is

本紙張尺度翻巾關家標準（CNS)A4規格（210 X 297公髮 — I* 1IJIIIMW--------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 479388 A7 五、發明說明（ 错回授控制電路調節（因而放電電壓也被調節）俾維持約略 值定的脈衝能輸出。約i至數小時間隔時間，氟以數秒鐘 的短暫注入時間定期注入。如此，於正常操作時，說漠度 由（例如）約0·10%經歷約i至數小時時間遞減至約〇._， 而於相同時間，放電電壓由例如約600伏增至約640伏。於 1至士數小時時間結束時（此時電壓已經漂移高達約_幻結 2時庄入氟，將氟濃度調整為約010%，回授控制（維持恆 定脈衝能）自動將電壓降回_伏。此項基本過程典型重複 數日。因雷射氣體的污染經歷數日時間逐漸累積，故希望 間隔約5至10日以新雷射氣體實質上更換全部雷射氣體。 訂 圖^兒明前述先前技誠注人技術。電壓值表示控制電壓 扎7之平均值，而間接表示實際充電電壓之平均值。 ’則述先前技術今日可有效用於提供此種準分子雷射 ^造壞境下長時間可靠地操作。但若干雷射參數例如頻 =、束外廊及波長可能受放電電壓及氟濃度實質上擺盈的 ’衫響。 曾經提出及申請專利多種技術用以測量及控制準分 子雷射之銳濃度於比較前述先前技術提供之氟濃度更狹窄 的範圍。此等技術通常未能商業化。 需要一種經濟方法其可減少雷射氣體的氟變化，因 而將氟變化導致雷射束性質的改變減至最低。 發明概述 社 印 製 本發明提供一種準分子雷射系統附有自動氟控制系 統俾允許對氣體放電雷射腔室之氟濃度做精確控制。 本紙張尺I適用^國國家標準^^14規格（210 X 297公髮 經濟部智慧財產局員工消費合作社印^^ 479388 A7 _____ B： 五、發明說明（5 ) - 申請人發現數參數例如脈衝能穩定性 '波長穩定性 及頻見對氟漠度的變化極為敏感。由經驗上也習得隨著雷 射的老化’產生表多所需雷射束參數組合的氟；農度也將變 異。又如背景乙節所述，眾所周知氟濃度降低將導致放電 電壓升南’雷射壽命被高放電電壓及高氟濃度縮短。如此 /員審（'真選擇鼠)辰度用以確保良好束參數且達成長的雷射壽 命。此項選擇涉及智慧型折衷決策，一旦做出折衷決策， 則氟濃度的「甜蜜地點」被決定，其表示最期望的氟濃度 範圍。當作出此項甜蜜地點決定時，要緊地須在氟濃度的 甜蛍地點以内操作雷射。此點之進行方式須使用電腦控制 系統監視雷射參數，決定M/AVC脈衝能隨電壓的改變），， 以及基於ΔΕ / Δν自動精確控制氟濃度而無需實際量測氟濃 度。 較佳具體實施例中，設置歧管系統，其可用以以趨 近於連續注入氟之速率之速率而準確注入小量（稱做「顯 微注射」）。 圖式之簡單說明 第1圖為線圖顯示於典型商用KrF或ArF準分子雷射之 放電電壓與氟濃度間之典型關係。 第2圖為線圖顯示廣為人使用之先前技術氟濃度控制 方法。 第3 A及3B圖為脈衝能及呈充電電壓之函數線圖 第4圖為流程圖說明氟控制之演繹法則。 ^ ^----------^---------^ (請先閱^背面之1意事項再填冩本頁) 本纸張尺度適用中國國家標準（CNS)A4規格（2]〇 297公茇） 479388 A7 B7 々本IL· 五、發明説明 第5圖為方塊圖驗證本發明之較佳具體實施例。 第6Α至6D圖為一組圖表顯示使用本發明之較佳具體 實施例所得測試結果。 較佳具體實施例之詳細說明。 本發明之較佳具體實施例係經由參照附圖說明。 基於ΔΕ/Δν做顯微注射 第3 Α圖為對帶有氟濃度28千巴斯卡及24千巴斯卡之 KrF雷射，脈衝能相對於充電電壓之典型線圖。第3B圖為 線圖顯示對相同兩種氟濃度值，ΔΕ/Δν隨充電電壓之變異 。如線圖指示，ΔΕ/zW之絕對值（對應恆定脈衝能Ε)隨著 氟而改變比隨充電電壓遠更一致變化。如第3Β圖指示，於 氟濃度由24千巴斯卡至28千巴斯卡經歷寬廣充電電壓值範 圍，由氟濃度變化產生的AEMV值變化相當一致，約25% 基於此項發現，申請人開發氟控制技術，設計用以經 由監控參數AE/AV而維持雷射於預定甜蜜地點操作，參數 △Ε/Δν表示脈衝能隨充電電壓之變化。 如背景乙節討論，用於製造積體電路的步進器及掃描 器設備作為光源的準分子雷射的較佳操作模式稱做「叢發 模式」。於此模式，雷射以例如約300脈衝的「叢發」於1000 赫茲至4000赫茲之脈衝速率操作，各300脈衝叢發照射直徑 約8吋的晶圓上約2或4平方厘米的單一曝光位置。典型 一片晶圓上有多個（例如約8 5個）曝光位置，各位置對應 一或多個積體電路。各叢發以閒置時間例如0.3秒隔開。於 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐） -----------------------裝------------------、可------------------線· (請先閲讀背面之注意事項再填寫本頁) 479388This paper size Turns Towels Standard (CNS) A4 specification (210 X 297 public hair — I * 1IJIIIMW -------- Order --------- line · (Please read the note on the back first) Please fill in this page again) 479388 A7 V. Description of the invention (wrong feedback control circuit adjustment (therefore the discharge voltage is also adjusted) 俾 maintain the approximately constant pulse energy output. About i to several hours, fluorine in a few seconds The short injection time is periodically injected. Thus, during normal operation, the degree of inertia is reduced from, for example, about 0 · 10% to about 0 to several hours, and at the same time, the discharge voltage is, for example, about 600. The volts increased to about 640 volts. At the end of 1 to a few hours (at this time the voltage has drifted as high as about _ magic knot 2 at the time of fluorine, adjust the fluorine concentration to about 010%, feedback control (maintain a constant pulse energy ) Automatically reduce the voltage back to _ volts. This basic process is typically repeated for several days. As the pollution of the laser gas gradually accumulates over several days, it is hoped that approximately 5 to 10 days will be used to replace substantially all the lasers with the new laser gas. Gas. Draw the picture ^ Erming the aforementioned prior technology injection technology. Voltage value indication The average value of the control voltage is 7 and the average value of the actual charging voltage is indirectly expressed. 'The previous technology can be effectively used today to provide such excimer lasers for long-term and reliable operation in bad environments. But several lasers Parameters such as frequency =, beam porch and wavelength may be substantially affected by the discharge voltage and fluorine concentration. There have been proposed and patented multiple technologies to measure and control the sharp concentration of excimer lasers compared to the previous technology Provides a narrower range of fluorine concentrations. These technologies are often not commercially available. An economical method is required that can reduce the change in fluorine in the laser gas, thereby minimizing changes in the properties of the laser beam caused by the change in fluorine. SUMMARY OF THE INVENTION Printed The present invention provides an excimer laser system with an automatic fluorine control system that allows precise control of the fluorine concentration in the gas discharge laser chamber. This paper ruler I applies ^ national standards ^ 14 specifications (210 X 297 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumption Cooperative ^^ 479388 A7 _____ B: V. Description of the Invention (5)-Applicants have found parameters such as pulse energy stability 'Wavelength stability and frequency are extremely sensitive to changes in fluorine desertification. It is also learned empirically that with the aging of lasers', the fluorine required for a combination of laser beam parameters is produced; the agronomy will also vary. As the background As mentioned in Section B, it is well known that a decrease in fluorine concentration will cause the discharge voltage to rise. The laser life is shortened by high discharge voltage and high fluorine concentration. In this way, the degree of inspection ('true selection rat') is used to ensure good beam parameters and achieve long growth. This choice involves a smart compromise decision. Once a compromise decision is made, the "sweet spot" of fluorine concentration is determined, which represents the most desirable range of fluorine concentration. It is important when making this sweet spot decision The ground must operate the laser within the sweet spot of fluorine concentration. To do this, a computer control system must be used to monitor the laser parameters, determine the M / AVC pulse energy change with voltage), and automatically and accurately control the fluorine concentration based on ΔΕ / Δν without actually measuring the fluorine concentration. In a preferred embodiment, a manifold system is provided, which can be used to accurately inject small amounts at a rate close to the rate of continuous fluorine injection (referred to as "significant injection"). Brief Description of the Drawings Figure 1 is a line chart showing the typical relationship between the discharge voltage and fluorine concentration of a typical commercial KrF or ArF excimer laser. Figure 2 is a line graph showing a conventional method for controlling fluorine concentration that is widely used by humans. Figures 3 A and 3B are function diagrams of pulse energy and charging voltage. Figure 4 is a flow chart illustrating the deduction rule of fluorine control. ^ ^ ---------- ^ --------- ^ (Please read the 1 notes on the back of ^ before filling in this page) This paper size applies to Chinese National Standards (CNS) A4 specification (2) 0297 cm) 479388 A7 B7 copy IL. 5. Description of the invention Figure 5 is a block diagram to verify the preferred embodiment of the present invention. Figures 6A to 6D are a set of charts showing test results obtained using the preferred embodiment of the present invention. Detailed description of the preferred embodiment. Preferred embodiments of the present invention are described with reference to the drawings. Microinjection based on ΔΕ / Δν Figure 3 Α is a typical line graph of pulse energy versus charging voltage for KrF lasers with fluorine concentrations of 28 kPas and 24 kPas. Figure 3B is a line graph showing the variation of ΔΕ / Δν with the charging voltage for the same two fluorine concentration values. As indicated by the line graph, the absolute value of ΔE / zW (corresponding to the constant pulse energy Ε) changes more significantly with fluorine than with the charging voltage. As indicated in Figure 3B, when the fluorine concentration ranges from 24 kPas to 28 kPas, a wide range of charging voltage values are experienced. The change in the AEMV value caused by the change in fluorine concentration is quite consistent, about 25%. Based on this finding, the applicant Developed fluorine control technology, designed to maintain laser operation at a predetermined sweet spot via the monitoring parameter AE / AV. The parameter ΔΕ / Δν indicates the change in pulse energy with the charging voltage. As discussed in Section B of the background, the preferred mode of operation of the excimer laser for the stepper and scanner devices used to manufacture integrated circuits as a light source is referred to as the "burst mode". In this mode, the laser operates at a burst rate of, for example, about 300 pulses at a pulse rate of 1000 Hz to 4000 Hz. Each 300 pulse burst irradiates a single exposure of about 2 or 4 square centimeters on a wafer of about 8 inches in diameter. position. A typical wafer has multiple (for example, about 85) exposure positions, each corresponding to one or more integrated circuits. Each burst is separated by an idle time, for example, 0.3 seconds. Applicable to Chinese paper standard (CNS) Α4 specification (210X297 mm) for this paper size. ---------- 、 may ------------------ line · (Please read the precautions on the back before filling this page) 479388

五、發明說明（7 ) 經濟部智慧財產局員工消費合作社印製 :如涵蓋85個曝光位置的85「叢發…雷射可閒置較長 才間、、勺@ 4新晶圓藉步進器或掃描器移動定位。先 前技術能量控制演繹法則視圖對各脈衝調整充電電壓，因 此於一叢發内的總能量隨該叢發内脈衝能的最小變異保持 怪定。各脈衝的特定充電電壓及脈衝能係藉電腦控制系統 監測。即使雷射控制試圖維持脈衝能恆定（以及維持總叢 毛此〖互定）’於各叢發期間，脈衝能及特定充電電壓由顯 著脈衝與脈衝間的變異。因此電腦容易經程式規劃而決定 脈衝能E及充電電壓v之平均值，求出從/av值。由於典型 每叢發由約300脈衝以每秒1〇〇〇至4〇〇〇脈衝的速率導來， 故須在短時間内加總大量ΔΕ/AV值且求平均才能獲得良好 統計數字因而可以高度準確度決定处/AV值。 找到甜蜜地點 為了找到預定氟「甜蜜地點」，雷射於各種氟濃度操 作，同時測量性能參數，例如對預定雷射脈衝能所需的能 量穩定性、頻寬及充電電壓。決定可獲得最合所需的參數 組合之氟濃度範圍。測量對應甜蜜地點之脈衝能E，充電 電壓V及ΔΕ/Δν值。決定氟注入至（ΔΕ/Δν)ί。電腦設置演繹 法則，於雷射生產操作期間，每當ΔΕ/Δν測量值降至或低 於（AEMVpf即要求做氟顯微注入。較佳具體實施例中， 演繹法則也揭示其它特定雷射參數，若有任何非合規參數 則致動警報及/或建立替代氟注入處理。 第4圖為流程圖說明本發明之較佳具體實施例，其於 雷射操作期間基於ΔΕ/Δν測量值提供氟之顯微注射。於本 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 10 丨丨！ ii!费· —丨訂---------線· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制衣 479388 ， Α7 * Β7 五、發明說明（8 ) 具體實施例，如方塊60、62及64所示，雷射於各種氟濃度 操作而決定預定操作甜蜜地點。甜蜜地點係由ΔΕ/Δν之較 佳值及AEMV範圍（AEMV範圍約略對應於由單次顯微注射 氟導致ΔΕ/Δν的改變）決定。表示ΔΕ/Δν範圍最小值之稱做 經決定且儲存於電腦記憶體。於本較佳具體實 施例也建立，表示E/V範圍的下限，但E/V範圍實 質上比由顯微注射造成的ΔΕ/Δν範圍更大（例如大兩倍）。 第4圖之其餘方塊係有關當雷射於製造模式用作為積體電 路光刻術的光源操作時的氟控制。E/V及ΔΕ/Δν值係由電 腦控制決定，若ΔΕ/Δν降至低於（ΔΕ/Δνχ則要求顯微注射 。一次注射後對雷射提供兩分鐘的時間使其穩定隨後重新 建立控制過程。只要ΔΕ/Δν係於甜蜜地點以内，則雷射控 制將繼續監測ΔΕ/Δν。演繹法則也查核E/V，若E/V參數降 至低於（E/V)i則請求注入。通常不會發生，但如66所示， 發現異常事件時對操作員發出警報。當E/V超過（E/V)iB寺 警報於68關閉。雖然圖中未顯示，但可***額外常式於演 繹法則俾允許雷射控制於所需情況例如V值過高時迴圈超 出本演繹法則。 有若干技術可用於決定AEMV值而用於控制程式。申 請人使用數種模式進行實驗，包括使用1000值的平均（拋 棄負值）以及使用1000值模式。申請人也藉定期變更電壓 達約2伏獲得單一較大ΔΕ及Δν值，而實驗測量AEMV。各 技術所得結果約略相等。 利用雛型ΔΕ/ΔΥ氟控制演繹法則所得測試結果顯示於 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 11 -------------裝·----；----訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7V. Description of the invention (7) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: For example, 85 "bundle hairs that cover 85 exposure positions ... the laser can be idle for a long time. Or the scanner moves and locates. The prior art energy control deduction rule view adjusts the charging voltage for each pulse, so the total energy in a burst is kept strange with the smallest variation of the pulse energy in the burst. The specific charging voltage and The pulse energy is monitored by a computer control system. Even if the laser control tries to maintain the pulse energy constant (and maintain the total cluster hair), the pulse energy and specific charging voltage are changed by significant pulses and pulses during each burst. Therefore, the computer can easily determine the average value of the pulse energy E and the charging voltage v by programming, and calculate the value from / av. Since each burst typically consists of about 300 pulses at 1000 to 4,000 pulses per second The rate leads, so it is necessary to sum up a large number of ΔΕ / AV values and average them in a short period of time to obtain good statistics, so that the location / AV value can be determined with high accuracy. Finding a sweet spot in order to find a predetermined fluorine "Sweet spot", the laser operates at various fluorine concentrations, while measuring performance parameters, such as the energy stability, bandwidth, and charging voltage required for a predetermined laser pulse energy. Decide on the range of fluorine concentrations where the most desirable combination of parameters can be obtained. Measure the pulse energy E, charging voltage V and ΔΕ / Δν corresponding to the sweet spot. It was decided to inject fluorine to (ΔΕ / Δν) ί. The computer sets the deduction rule. During the laser production operation, whenever the ΔΕ / Δν measured value drops to or below (AEMVpf, fluorine microinjection is required. In a preferred embodiment, the deduction rule also reveals other specific laser parameters. If there are any non-compliant parameters, an alarm is activated and / or an alternative fluorine injection process is established. Figure 4 is a flowchart illustrating a preferred embodiment of the present invention, which is provided during laser operation based on ΔΕ / Δν measurements Microinjection of fluorine. Applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm) in this paper size. 10 丨 丨! Ii! Read the notes on the back before filling in this page) Printed clothing 479388 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Α7 * Β7 V. Description of the invention (8) Specific examples, as shown in boxes 60, 62 and 64, laser The sweet spot is determined by operating at various fluorine concentrations. The sweet spot is determined by the better value of ΔΕ / Δν and the range of AEMV (the range of AEMV approximately corresponds to the change in ΔΕ / Δν caused by a single microinjection of fluorine). / Δν range minimum Called determined and stored in computer memory. It is also established in this preferred embodiment to indicate the lower limit of the E / V range, but the E / V range is substantially larger than the ΔΕ / Δν range caused by microinjection ( For example, it is twice as large.) The remaining blocks in Figure 4 are related to fluorine control when the laser is operated in manufacturing mode and used as a light source for integrated circuit lithography. E / V and ΔΕ / Δν values are determined by computer control. If ΔΕ / Δν drops below (ΔΕ / Δνχ, microinjection is required. Provide two minutes for the laser to stabilize after one injection and then re-establish the control process. As long as ΔΕ / Δν is within the sweet spot, the thunder The radio control will continue to monitor ΔΕ / Δν. The deduction rule also checks E / V, and if the E / V parameter drops below (E / V) i, it requests an injection. Usually it does not happen, but as shown in 66, an abnormal event is found The operator is alerted when the E / V exceeds (E / V) iB Temple alarm is turned off at 68. Although not shown in the figure, additional routines can be inserted into the deduction rule. Allow laser control to the required situation such as V When the value is too high, the loop goes beyond this deduction rule. Several techniques are available Determine the AEMV value and use it for the control program. The applicant uses several modes for experiments, including using the average of 1000 values (discarding negative values) and using the 1000 value mode. The applicant also obtains a single large by periodically changing the voltage to about 2 volts. ΔΕ and Δν values, and the experimental measurement of AEMV. The results obtained by each technology are approximately equal. The test results obtained using the prototype ΔΕ / Δ 控制 fluorine control deduction show that this paper scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm ) 11 ------------- install · ----; ---- Order --------- line (Please read the precautions on the back before filling this page) A7

五、發明說明（9 ) 第6圖。於此項驗證期間，電壓控制於約2〇伏以内而注入 門隔日寸間、力1小日寸。〉主入期間連續做雷射照射。如圖所示 ’全部規格參數皆料於極限範_。由更小量顯微注射 甚至可獲知更精準的控制（例如如下示，於約3至$分鐘間 隔可做極小量注射，其可經歷長時間操作獲得幾乎恨定的 氟濃度及充電電壓）。 氟注入設備 氟耗盡 如第5圖所示之雷射腔室i包含2〇·3升雷射氣體。如前 文對KrF雷射所述，及名目組成為1〇%氪，〇1%氟及差額 為氖。0.1%氟表示於3大氣壓約〇〇〇2〇升或2毫升氟容積。 就重量術語而言，雷射腔室之氟名目量為約8克0 1毫克） 。氟分壓為280巴斯卡，純氟（對應1%氟混合物約28千巴 斯卡）。使用雷射於負載因數約4〇〇/0(光刻術雷射的典型）操 作的正常操作期間，氟係以約每小時3.3毫克的速率耗盡（ 相當於每小時耗用約5%腔室的氟）。就純氟之分壓而言， 氟之名目耗盡速率為約每小時145巴斯卡。為了使用p/〇 氟氣體混合物補償此耗盡，相當於每小時約丨·丨5千巴斯卡 谷積混合物加至腔室内。 如背景乙節所述，氟之耗盡速率完全不恆定。若雷 射風扇運轉但未照射雷射，則氟的耗盡速率減約對半。若 風扇關閉，則氟之耗盡速率減至40%負載因數耗盡速率至 約1/4。於1〇〇〇/0負載因數，耗盡速率約為40%負載因數耗 盡速率之加倍。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -----*—丨訂---------線一 經濟部智慧財產局員工消費合作社印製 12 ^/93885. Description of the invention (9) Figure 6. During this verification period, the voltage was controlled within about 20 volts and injected into the door every day, for 1 hour. 〉 Continuous laser irradiation during the main entrance. As shown in the figure, all specifications are expected from the limit range. Even smaller amounts of microinjection can be used to obtain even more precise control (for example, as shown below, very small injections can be done at intervals of about 3 to $ minutes, which can take a long time to obtain an almost constant fluorine concentration and charging voltage). Fluorine injection equipment Fluorine depletion The laser chamber i shown in Fig. 5 contains 20.3 liters of laser gas. As mentioned above for the KrF laser, the nominal composition is 10% 氪, 0.1% fluorine and the difference is neon. 0.1% fluorine indicates a volume of about 20000 liters or 2 ml of fluorine at 3 atmospheres. In terms of weight, the nominal amount of fluorine in the laser cavity is about 8 g (0.1 mg). The partial pressure of fluorine is 280 Baska, pure fluorine (corresponding to about 28 kPa for a 1% fluorine mixture). During normal operation using a laser with a load factor of about 400/0 (typical of photolithographic lasers), the fluorine system is depleted at a rate of about 3.3 mg per hour (equivalent to about 5% of the cavity per hour) Chamber of fluorine). In terms of partial pressure of pure fluorine, the depletion rate of fluorine is about 145 bska per hour. In order to compensate for this depletion using a p / 0 fluorine gas mixture, the equivalent of about 5,000 Baska grain mixtures per hour is added to the chamber. As described in Section B of the background, the depletion rate of fluorine is not constant at all. If the laser fan is running but not irradiated, the depletion rate of fluorine is reduced by about half. If the fan is turned off, the depletion rate of fluorine is reduced to 40% and the load factor depletion rate is about 1/4. At 1000/0 load factor, the depletion rate is approximately double the 40% load factor depletion rate. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ----- * — 丨 Order --------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 12 ^ / 9388

經濟部智慧財產局員工消費合作社印製 第5圖顯示一種系統，其提供自動控制且設計成以低 抵約3至5分鐘間隔時間準確控制週期性氟注射。如前述， 對典型近代1000赫、10毫焦光刻術KrF準分子雷射而言， 於40%負載因數操作之氟耗盡速率為約每小時3.3毫克或 母分鐘55微克。此項氟濃度的減低要求每小時8〇〇伏或每5 分鐘約66伏的放電電壓（假設未添加氟）。例如以5分鐘時 間電壓由約18,000伏增至約18,〇66伏為典型例。此項放電 電壓的增高可藉提高高壓充電電壓達對應增量（例如由568 伏至582伏）完成。如此若甜蜜地點係對應於1 〇毫焦脈衝能 為575伏充電電壓，則第5圖系統被程式規劃成視需要調整 充電電壓而控制脈衝能至每脈衝i 0毫焦直到处/AV測量值 降至（ΔΕ/Δνΐ為止（由於氟耗盡結果）。此時約注入29〇微克 氟，其改良雷射效率，故脈衝能放電電壓回授電路自動造 成電壓降至約568伏，然後隨著氟的進一步耗盡，電壓將 再度逐漸升高至582伏，此時要求另一次注入。甜蜜地點 為約2%名目電壓，如第6圖所示，比較第2圖顯示之先前 技術有極大改良，先前技術之電壓擺盪約8%。如前述， 即使進行更小量注射常見進一步減少電壓及氟的擺盪。 氣體置換 前述過程基本上係以幾乎連續基準置換被耗盡的氟 。由於氟氣體來源僅為1 %氟，故以接近連續基準置換腔 室的部份氪及氖。雖言如此，即使部份雷射氣體實質被連 續置換，但於此種模式操作結果導致雷射氣體的污染物積 聚而降低雷射⑧率。&amp;項效率減低要求其為漸進長時間提 裝-----”----訂---------線 (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 5 shows a system that provides automatic control and is designed to accurately control periodic fluoride injections at intervals of approximately 3 to 5 minutes. As mentioned earlier, for a typical modern 1000 Hz, 10 mJ KrF excimer laser, the fluorine depletion rate operating at a 40% load factor is about 3.3 mg per hour or 55 micrograms per minute. This reduction in fluorine concentration requires a discharge voltage of 800 volts per hour or about 66 volts per 5 minutes (assuming no fluorine is added). For example, the voltage is increased from about 18,000 volts to about 18,066 volts in 5 minutes as a typical example. This increase in discharge voltage can be accomplished by increasing the high-voltage charging voltage by a corresponding increment (for example, from 568 volts to 582 volts). So if the sweet spot corresponds to a charging voltage of 575 volts at 10 millijoules of pulse energy, then the system in Figure 5 is programmed to adjust the charging voltage as needed to control the pulse energy to 0 millijoules per pulse until the / AV measurement value. Reduced to (ΔΕ / Δνΐ (due to the result of fluorine depletion). At this time, about 29 micrograms of fluorine is injected, which improves the laser efficiency, so the pulse energy discharge voltage feedback circuit automatically reduces the voltage to about 568 volts, and then With further depletion of fluorine, the voltage will gradually rise to 582 volts again, at which time another injection is required. The sweet spot is about 2% of the nominal voltage, as shown in Figure 6, which is greatly improved compared to the previous technology shown in Figure 2. The voltage swing of the prior art is about 8%. As mentioned above, even smaller injections are often used to further reduce the swing of voltage and fluorine. Gas replacement The aforementioned process basically replaces the depleted fluorine on an almost continuous basis. Because of the fluorine gas source Only 1% fluorine, so part of the plutonium and neon in the chamber is replaced with a near continuous reference. However, even if some of the laser gas is substantially continuously replaced, the operation in this mode results in Accumulation of radioactive pollutants reduces the rate of laser radon. &Amp; The reduction in efficiency requires it to be gradually upgraded for a long time ----- "---- Order --------- line (please first (Read the notes on the back and fill out this page)

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱· A7 A7 經濟部智慧財產局員工消費合作社印製 ----—----B7 _ 五、發明說明（U ) 高電：及/或提高氟濃度俾維持所需脈衝能。因此理由故 ,吏用先則技術系統作業提示雷射須週期性關閉俾實 質完全做氣體更換。此項實質完全的氣體更換稱做重新填 裝。此段期間係基於雷射脈衝數例如兩次重新填裝間 1〇〇，麵，刪脈衝決定，或重新«時間可基於前次重新 填裝經過的曰層時間或脈衝與日曆時^者的組合決定。 又重新填裝時間可由於特定氣濃度時預定輸出需要的充電 電壓幅度決定。較佳於重新填裝後須對「甜蜜地點」重新 測忒。又於兩次填裝間須定期進行甜蜜地點測試，故若甜 蜜地點改變則操作員將了解新的甜蜜地點何在。 重新填裝可使用第5圖所示系統達成，如後述。閥i 〇 6、1 5 ' 12、17及4關閉，閥6及12開啟，真空幫浦13運 轉，雷射腔室被幫送至絕對壓力低於13千巴斯卡（介於腔 ，至1與真空幫浦13間可設置直接幫送管路來允許快速減壓） 。閥12關閉。打開閥6，來自緩衝器瓶丨6的1 〇/。氪、99〇/〇氖 緩衝氣體加至腔室而填裝至5CTC的壓力相當於262千巴斯 卡為止。注意對此20.3升雷射腔室而言，溫度校正對於偏 離50°C之腔室溫度可使用ΔΡ/ΔΤ校正至1千巴斯卡/°C近似 值。故若腔室溫度為23°C則將填裝至247千巴斯卡）。閥17 關閉而閥15開啟，來自富鹵素氣瓶14的定量1%氟、1%氪 、98%氖混合物加至腔室1而填裝至壓力相當於50°C為290 千巴斯卡（注意使用前述相同溫度修正）。如此於腔室内產 生約0.1%氟、1.0%氪及98.9%氖組成的氣體混合物。當腔 室加熱至約50°C時壓力將為約3大氣壓或290千巴斯卡。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14 - I(^—..r—-----^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 Public Love · A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ B7 _ V. Description of invention (U) High Electricity: and / or increase the fluorine concentration and maintain the required pulse energy. For this reason, the first technical system operation is used to prompt the laser to be turned off periodically. Substantially complete gas replacement is called renewal. Filling. This period is based on the number of laser pulses. For example, the refilling interval is 100 times, the pulses are deleted, or the refill time is based on the time or pulse and calendar time of the previous refilling. The combination of the two is determined. The refilling time can be determined due to the charging voltage range required for the predetermined output at a specific gas concentration. It is better to re-test the "sweet spot" after refilling. In the second filling room The sweet spot test must be performed regularly, so if the sweet spot changes, the operator will know where the new sweet spot is. Refilling can be achieved using the system shown in Figure 5, as described later. Valve i 〇6, 1 5 '12, 17 And 4 off, 6 and 12 are turned on, vacuum pump 13 is running, and the laser chamber is pumped to an absolute pressure of less than 13 kPaska (between the chamber, and 1 and vacuum pump 13 can be provided with a direct pumping line to allow Quick decompression). The valve 12 is closed. The valve 6 is opened, and the buffer gas from the buffer bottle 丨 6, 〇, 99 〇 / neon buffer gas is added to the chamber and the pressure filled to 5CTC is equivalent to 262 kilobass Note that for this 20.3 liter laser chamber, the temperature correction can be corrected to an approximate value of 1 kilobasca / ° C using ΔP / ΔΤ for the temperature of the chamber deviating from 50 ° C. Therefore, if the chamber temperature is 23 ° C will be filled to 247 kilobasca). Valve 17 is closed and valve 15 is opened. A quantitative 1% fluorine, 1% krypton, and 98% neon mixture from the halogen-rich gas cylinder 14 is added to the chamber 1 and filled to a pressure equivalent to 50 ° C at 290 kPa. (Note that the same temperature correction is used as before). Thus, a gas mixture of about 0.1% fluorine, 1.0% krypton, and 98.9% neon was generated in the chamber. When the chamber is heated to about 50 ° C, the pressure will be about 3 atmospheres or 290 kPa. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) -14-I (^ — .. r —----- ^ ---- Order --------- (Please read the precautions on the back before filling this page) A7

訂 線 kOrder K

Claims (1)

479388479388 第891 1561 1號申請案申請專利範圍修正本 91129, 1· 一種準分子雷射系統，包含： A) —雷射腔室含有： 1) 二彼此隔開的細長電極； 2) —種雷射氣體包含： 一種貴氣， 氟， 一種緩衝氣體； B) —鼓風機用以流通雷射氣體介於二隔開的電極 間； C) 一氟來源； D) —種決定ΑΕ/Δν之裝置；以及 Ε) —種氟控制系統，設置成可基於Α£/Δν測定值自 動控制氟注入流量，俾允許雷射於由雷射腔室的氟濃度 決定的預定甜蜜地點以内操作。 2.如申請專利範圍第1項之準分子雷射系統，其中貴氣為 氪。 3 ·如申請專利範圍第1項之準分子雷射系統，其中貴氣為 氬。 4·如申請專利範圍第丨項之準分子雷射系統，其中氪係占 雷射氣體之約1%，氟係占雷射氣體之約O.i %，及缓衝 氣體為氖其係構成雷射氣體之約98.9%。 5.如申請專利範圍第1項之準分子雷射系統，其中該回授 控制系統包含溫度及壓力感測器及一處理器經程式規 本紙張尺度適用中國國家標準（CNS) A4規格⑵〇χ297公楚） ::!......——：·： •裝…： (請先閲讀背面之注意事项再填寫本頁) —訂I :線- -16 - 479388 定 A8 B8 C8 D8 、申請專利範圍 劃而可基於溫度與參考溫度的偏差而調整氟的注入。 6·如申請專利範圍第1項之準分子雷射系統，其中該雷射 回授控制系統經程式規劃而控制氟流量，保持雷射於預 定甜蜜地點以内操作。 7·如申請專利範圍第6項之準分子雷射系統，其中甜蜜地 點係定義為某種氟濃度範圍。 8·如申請專利範圍第6項之準分子雷射系統，其中該甜蜜 地點係由電壓相對於氟濃度之曲線的斜率決定。 9·如申請專利範圍第8項之準分子雷射系統，其中該回授 控制系統經程式規劃成可於彼此充分接近的時間間隔 注入氣俾模擬連續注入而允許電壓界定的甜蜜地點不 大於名目甜蜜地點電壓之約2%。 10·如申請專利範圍第8項之準分子雷射系統，進一步包含 一與注入歧管分開的耗盡管線。 11 ·如申請專利範圍第1項之準分子雷射系統，其中該注入 瓶具有氣體容積大於〇·5升。 12·如申請專利範圍第丨項之準分子雷射系統，進一步包含 一蠕變瓶具有容積大於0.3升。 13 ·如申請專利範圍第1項之準分子雷射系統，進一步包含 氣體管路允許氣體由腔室之相對高壓位置流至注入瓶 以及由注入瓶流至腔室的相對低壓位置。 14· 一種於氣體放電雷射中控制氟濃度之方法，包含下列步 驟： Α)於各種氟濃度操作雷射及決定雷射參數俾決 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公楚·） (請先閱讀背面之注意事項再填寫本頁) .、可| .線丨 17 Α8 Β8 C8 D8 、申請專利範圍 較佳操作範圍； Β)決定於較佳操作範圍内的ΔΕ/Δν ; C) 決定ΔΕ/zW注入值以及 D) 於雷射操作期間，當ΔΕ/Δν降至或低於（AE/AV)i 時注入定量氟。 15.如申請專利範圍第14項之方法，其中氟之注入量係小於 5亳克。 16·如申請專利範圍第14項之方法，其中該方法為自動且係 由一電腦處理器控制，該電腦處理器係使用氟控制演繹 法則做程式規劃。 本紙張尺度適用中國國家標準（CNS) A4規格（210 X 297公釐） ----------------------- (請先閱讀背面之注意事項再填寫本頁) 18Application No. 891 1561 Application No. 1 Amendment to Patent Scope 91129, 1. An excimer laser system comprising: A) —laser chamber contains: 1) two elongated electrodes spaced from each other; 2) —kind of laser The gas contains: a noble gas, fluorine, a buffer gas; B)-a blower to circulate laser gas between two separated electrodes; C) a source of fluorine; D)-a device to determine AE / Δν; and Ε) —A fluorine control system set to automatically control the fluorine injection flow based on the measured value of A £ / Δν, allowing the laser to operate within a predetermined sweet spot determined by the fluorine concentration of the laser chamber. 2. The excimer laser system of item 1 in the patent application scope, in which the noble gas is krypton. 3 · The excimer laser system of item 1 of the patent application, where the noble gas is argon. 4. If the excimer laser system according to item 丨 of the patent application scope, the samarium system accounts for about 1% of the laser gas, the fluorine system accounts for about Oi% of the laser gas, and the buffer gas is neon which constitutes the laser About 98.9% of the gas. 5. If the excimer laser system of item 1 of the patent scope is applied, the feedback control system includes temperature and pressure sensors and a processor. The paper size is applicable to the Chinese National Standard (CNS) A4 specification. χ297 公 楚) ::! ......——: ·: • Install…: (Please read the notes on the back before filling in this page) —Order I: Line--16-479388 Order A8 B8 C8 D8 2. The scope of patent application can be adjusted to adjust the injection of fluorine based on the deviation of the temperature from the reference temperature. 6. If the excimer laser system of item 1 of the patent application scope, the laser feedback control system is programmed to control the fluorine flow and keep the laser operating within a predetermined sweet spot. 7. The excimer laser system according to item 6 of the patent application, where the sweet spot is defined as a certain fluorine concentration range. 8. The excimer laser system according to item 6 of the patent application, wherein the sweet spot is determined by the slope of the voltage versus the fluorine concentration curve. 9. If the excimer laser system according to item 8 of the patent application scope, the feedback control system is programmed to inject gas at a sufficiently close time interval to simulate continuous injection and allow the sweet spot defined by the voltage to be no larger than the name Sweet spot voltage is about 2%. 10. The excimer laser system according to item 8 of the patent application, further comprising a depletion line separate from the injection manifold. 11. The excimer laser system according to item 1 of the patent application scope, wherein the injection bottle has a gas volume greater than 0.5 liters. 12. The excimer laser system according to item 丨 of the patent application scope, further comprising a creep bottle having a volume of more than 0.3 liters. 13 · The excimer laser system according to item 1 of the patent application scope, further comprising a gas pipeline allowing gas to flow from the relatively high-pressure position of the chamber to the injection bottle and from the relatively low-pressure position of the injection bottle to the chamber. 14. · A method for controlling fluorine concentration in a gas discharge laser, including the following steps: A) Operating the laser at various fluorine concentrations and determining laser parameters. The paper size applies the Chinese National Standard (CNS). A4 specification (210X297) Chu ·) (Please read the notes on the back before filling in this page)., OK |. Line 17 Α8 Β8 C8 D8, Better operating range for patent application range; Β) ΔΕ / Δν determined within the better operating range C) Determine the ΔΕ / zW injection value and D) During the laser operation, a certain amount of fluorine is injected when ΔΕ / Δν drops to or below (AE / AV) i. 15. The method according to item 14 of the patent application scope, wherein the injected amount of fluorine is less than 5 g. 16. The method according to item 14 of the scope of patent application, wherein the method is automatic and controlled by a computer processor, which is programmed using a fluorine control deduction rule. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------------------- (Please read the notes on the back first (Fill in this page again) 18
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