TW462081B - Plasma CVD system and plasma CVD film deposition method - Google Patents

Abstract

The plasma CVD device and plasma CVD film formation method of the present invention are provided to extend the maintenance cycle and also reduce the fluorination of a cathode electrode in a plasma CVD device. On a cathode electrode 17, there is provided with a plurality of gas introduction ports 5 for introducing the gas between the cathode electrode 17 and an anode electrode 3. There is provided with a plurality of recesses 14 for increasing the area of the cathode electrode 17, at the face opposed to the anode electrode 3 of this cathode electrode 17 provided with the gas introduction ports 5. The recess 14 has a width more than 3 mm and smaller than the pitch of the gas introduction port 5, and has opening area larger than the opening area of the gas introduction port 5.

Description

^62081 五、發明說明（1) 【發明的詳細說明】 【發明所屬之技術領域】 本發明是關於半導體製造作業中使用的電漿CVD 電漿CVD薄膜形成方法。 队 【先前技術】 半導體製造作業之—是在基板上形成規定薄臈的電漿 CVD (化學氣相沈積）成膜作業。該製造作業是將基板置 於密閉的處理室内，在往設置於處理室内的一對電極之 供應成膜氣體的同時，施加高頻電力，使其發生電漿，八 解成膜氣體的氣體分子，發生化學反應，在基板表面 薄膜。 风 圖8所示的習知電漿CVD裝置的成膜室，是在處理室 設有一對電極2、3，在陽極電極3上配置基板4，從另外的 陰極電極電極2導入成膜氣體。裝設上加熱器丨〇和下加熱 器11的目的是為了使基板4均勻地被加熱到—定的溫度。 成膜氣體是透過連接於陰極電極2的供應管I〗供應的， 經過陰極電極2上設置的分散板丨2、氣體導入孔5，將成膜 氣體導入到陰極電極2和陽極電極3之間。 對於導入電極2、3之間的成膜氣體，經過成膜氣體導入 管1 5、陽極托架1 3，施加RF高頻電源9之高頰電力，使其 產生電漿’在基板4上形成規定的薄膜。進行電漿處理成 膜氣體的殘餘氣體’透過排氣管7排放到排氣系統，進行 處理。 此種裝置之一是能夠形成統稱為非晶矽膜的薄膜^ 62081 V. Description of the invention (1) [Detailed description of the invention] [Technical field to which the invention belongs] The present invention relates to a plasma CVD plasma CVD thin film forming method used in semiconductor manufacturing operations. Team [Previous Technology] One of the semiconductor manufacturing operations is a plasma CVD (chemical vapor deposition) film forming operation that forms a predetermined thin layer on a substrate. In this manufacturing operation, a substrate is placed in a closed processing chamber, and a film-forming gas is supplied to a pair of electrodes provided in the processing chamber. At the same time, high-frequency power is applied to cause plasma generation, and the gas molecules of the film-forming gas are decomposed. A chemical reaction occurs and a thin film is formed on the substrate surface. The film forming chamber of the conventional plasma CVD apparatus shown in FIG. 8 is provided with a pair of electrodes 2 and 3 in a processing chamber, a substrate 4 is disposed on the anode electrode 3, and a film forming gas is introduced from another cathode electrode electrode 2. The purpose of installing the upper heater 11 and the lower heater 11 is to uniformly heat the substrate 4 to a predetermined temperature. The film-forming gas is supplied through the supply pipe I connected to the cathode electrode 2 and is introduced between the cathode electrode 2 and the anode electrode 3 through the dispersion plate 2 and the gas introduction hole 5 provided on the cathode electrode 2. . For the film-forming gas introduced between the electrodes 2 and 3, the high-frequency electric power of the RF high-frequency power source 9 is applied through the film-forming gas introduction tube 15 and the anode bracket 13 to generate a plasma, which is formed on the substrate 4. Prescribed film. The residual gas' of the plasma-forming film-forming gas is discharged to the exhaust system through the exhaust pipe 7 and processed. One such device is the ability to form a thin film collectively known as an amorphous silicon film

89120210.ptd 第4頁 4 620 8 1 五、發明說明（2) (SiN、si〇2、氩化 α-Si、氫化a-Si(N+)等）的電漿CVD 裝置。 對於成膜氣體，在形成SiN時使用SiIj4、nh3、N2混合氣 體；在形成α -Si時使用Sil、H2的混合4氣體；在形成Si〇2 時使用SiH4、化〇或TE0S、〇2的混合氣體。在成膜氣體中， 包括只是參加反應而不形成膜的氣體（非成膜氣體）。在 上述的例中，其中〇3、〜、I、n2〇、h屬於韩成膜氣體。 與此相反’單獨反應即可成膜的氣體，例如上述s i 1 ' TE0S被稱為主成膜氣體。 但是’採用這種電漿CVD法製造的薄膜，具有包括在基 板4上相鄰電漿區域形成的特徵。這裏所說的相鄰電漿區 域是指與電漿區域相接的區域及其周邊部位。周邊部位包 括絕緣環1 6、20或排氣管7的内部等。因此，伴隨成膜處 理時基板片數的增加，陰極電極2表面或絕緣物表面等以 累積，形式形成薄膜，稱此類膜為累積形成膜。於電漿相 鄰的區域，在表面溫度較低的區域（大約l6(rc )形成的 薄膜有成為粉末狀的趨勢。這種粉末形態的薄膜，在振動 和壓力變化等因素作用下容易剝落和脫落，或者呈浮游狀 恶。另一方面，累積形成膜隨著厚度的増加，膜的應力辦 加’不要多久就會剝離。 曰 【發明所欲解決之問題】 ，如上所述，採用習知的技術，由於形成粉末狀膜和累積 形成膜，因此存在以下問題。 (1 )頻繁的維修週期89120210.ptd Page 4 4 620 8 1 V. Description of the invention (2) (SiN, si02, argonized α-Si, hydrogenated a-Si (N +), etc.) plasma CVD device. For the film-forming gas, a mixture of SiIj4, nh3, and N2 is used in the formation of SiN; a mixture of 4 gases of Sil and H2 is used in the formation of α-Si; mixed composition. The film-forming gas includes a gas (non-film-forming gas) that simply participates in the reaction without forming a film. In the above examples, 〇3, ~, I, n20, and h belong to the Han film-forming gas. On the contrary, a gas that can form a film by reacting alone, for example, the above-mentioned s i 1 'TEOS is called a main film-forming gas. However, a thin film produced by such a plasma CVD method has a feature that a plasma region formed adjacent to the substrate 4 is formed. The adjacent plasma area referred to here refers to the area connected to the plasma area and its peripheral parts. The peripheral parts include the insulation rings 16 and 20, the inside of the exhaust pipe 7, and the like. Therefore, with the increase in the number of substrates during the film formation process, the surface of the cathode electrode 2 or the surface of the insulator is formed into a thin film, and such a film is referred to as a cumulatively formed film. In the area adjacent to the plasma, the film formed in the area with a lower surface temperature (about 16 (rc)) tends to become powdery. This powdery film is easy to peel off under the influence of factors such as vibration and pressure changes. On the other hand, as the thickness of the accumulated film increases with increasing thickness, the stress of the film will increase, and it will not be peeled off soon. [Problems to be Solved by the Invention] As mentioned above, the conventional method The technology has the following problems due to the formation of a powdery film and a cumulative film formation: (1) Frequent maintenance cycles

4 620 8 1 五、發明說明（3) ，，板上不僅產生因粉末等的顆粒引起的污染，由於對 j氣系統的污染而成為排氣能力下降的原因。為了防止這 故障’目前對規定片數的基板經過連續成膜處理以後， ^過利用腐银性氣體（Cf4、NF3等的氟系氣體）進行潔淨 4 ^，將累積形成膜和粉末狀薄膜變換成氣體後去除。潔 淨处理後，腐翻性氣體及其副產物（H F等）殘留在處理室 内因此’為消除這些影響必須進行殘渣處理。殘渣處 理t通常與成膜條件下進行的處理相同。這樣，對處理室 頻篡地、反覆地運用數片基板的成膜處理和潔淨處理以及 殘產處理等的所謂週期處理，在—個週期内能夠連續成膜 的基板片數受到限制，因此強烈希望成膜基板的片數增 (2 )伴隨電極氟化的成膜速度降低及頻繁的電極再生 透過頻繁地、反覆進行週期性處理，在陰極電極表面慢 忮形成，化物（AiFx、MgFx等金屬氟化物）^利用這一現 於最初的數十個週期内成膜速度逐漸下降，在數百個 k ’月以後發生異常放電現& (電弧放電）的故障。因此， 較短時間内以研磨去除陰極電極表面的敗化物或定 =更換陰極電極（稱為陰極電極再生）。這是目前的現丨 本發明的課題在於：借助#描4 + k i 你 1日助於增加電極的面積解決習知技 打存在的問題，在延長維修週期的同時，提供能改盖 的氟化現象的電漿CVD裝置及電漿CVD薄膜形成方法:° 【解決問題之手段】 '4 620 8 1 V. Description of the invention (3), not only pollution caused by particles such as powder, etc. on the board, but also due to the pollution to the gas system, the exhaust capacity is reduced. In order to prevent this failure, at present, after continuous film formation processing is performed on a predetermined number of substrates, ^ cleansing with a corrosive silver gas (fluorine-based gas such as Cf4, NF3, etc.), and transforms the accumulated film and powder film. Remove into gas. After the cleaning process, the decaying gas and its by-products (HF, etc.) remain in the processing chamber. Therefore, a residue treatment must be performed in order to eliminate these effects. The residue treatment t is usually the same as the treatment performed under film formation conditions. In this way, the so-called cyclic processing, which frequently and repeatedly uses a plurality of substrates for film formation processing, cleaning processing, and residual production processing, in the processing room, limits the number of substrates that can be continuously formed in a cycle, so it is strongly It is hoped that the number of film-forming substrates will increase (2) The film-forming speed accompanied by electrode fluorination will decrease and frequent electrode regeneration will occur through frequent and repeated periodic processing, which slowly forms on the surface of the cathode electrode. Fluoride) ^ Using this phenomenon, the film-forming speed gradually decreased in the first dozens of cycles, and abnormal discharge (arc discharge) failure occurred hundreds of k 'months later. Therefore, in a relatively short period of time, the deterioration of the cathode electrode surface can be removed by grinding or the cathode electrode must be replaced (called cathode electrode regeneration). This is the current problem. The subject of the present invention is: by using # 描 4 + ki, you can help increase the electrode area on the 1st day to solve the problems of conventional techniques, and provide a fluorination that can be changed while extending the maintenance period. Phenomena of plasma CVD device and plasma CVD thin film formation method: ° [Solution to Problem] ''

^62081 五、發明說明（4) 發明是裝設有可以減壓的處理室、該處理室内配 的:對平板電極具有載置基板並接地的第丨電極及罝 導入孔並可施加高頻波的第2電極、透過第2電極的 :體二入孔於第！和第2電極之間供應氣體的成膜 二二ί上述處理室排氣的排氣管等，並與上述第1電極Γ -»的上述第2電極的面上設置有凹部的電漿CVD 凹部與貫穿第2電極形成的氣體導入孔不同，是。： 的形式形成的，因此包括非貫穿孔和溝槽。 ' 第2電極一旦設置凹部，則非成臈氣體滯留於凹部内， 因1匕在凹部内不那麼容易形成累積形成膜，維修週期可以 ，長。非成膜氣體從滯留的凹部以高密度的能放 體導入孔導入的成膜氣體有效地電離，因此 電合㈣’可以降低所須的高頻電力，在 Γΐ:=ί電壓Vdc可以大幅度降低，第2電極的蒙 皮：位的斜率可以作得平緩一些。因此，可以抑制第2電 第2發明，是在第氣化物的生成。 至小於氣體導入孔間距的巾s=其凹部具有3職以上乃 導入孔的間距，是指氣電紅VD裝置。所謂氣體 與凹部之間的距離中===距離或者氣體導八孔 :3第WV—尤其是凹部具有3 —以上乃至小於氣體導 入孔間距的幅寬範圍時， λ- 廿可以大幅度降低，第2電極的 J皮電、的斜率可以作得更加平緩一些。因此，可以抑制 第2電極氟化物的生成。^ 62081 V. Description of the invention (4) The invention is equipped with a processing chamber capable of decompression, and the processing chamber is equipped with a plate electrode having a substrate for grounding and a ground electrode and a 罝 introduction hole capable of applying high frequency waves. 2 electrodes, through the 2nd electrode: body two into the hole at the first! A film is formed by supplying gas between the second electrode and the second electrode. The exhaust pipe of the above-mentioned processing chamber is exhausted, and a plasma CVD recess is provided on the surface of the second electrode with the first electrode Γ-». Unlike the gas introduction hole formed through the second electrode, it is. : Is formed in the form and therefore includes non-through holes and trenches. '' Once the second electrode is provided with a recessed portion, the non-entrained gas is retained in the recessed portion. Since 1 dagger does not easily form a build-up film in the recessed portion, the maintenance period can be long. The non-film-forming gas is effectively ionized from the remaining recessed portion with a high-density energy-releasing body introduction hole. Therefore, the electric coupling can reduce the required high-frequency power, and the voltage Vdc can be greatly reduced Lower, the skin of the second electrode: the slope of the bit can be made smoother. Therefore, the second invention can be suppressed, and the formation of the second gaseous substance can be suppressed. The towel s to less than the pitch of the gas introduction holes = the recess has more than 3 positions, which is the pitch of the introduction holes, which refers to the gas-electric red VD device. The so-called distance between the gas and the recess === the distance or the eight holes of the gas guide: 3rd WV—especially when the recess has a width range of more than 3—or even less than the gap between the gas introduction holes, λ- 廿 can be greatly reduced, The slope of the J electrode of the second electrode can be made smoother. Therefore, generation of fluoride at the second electrode can be suppressed.

4 620 8 1 五、發明說明（5) 第3發明是於第2或第3發明中，凹部開口面積具有大於 氣體導入孔的開口面積的電漿CVD裝置。由於凹部開口面 積大於氣體導入孔的開口面積，因此，透過在凹部形成電 漿，不會出現氣體導入孔内生成電漿的不良狀態^ 一第4至第6發明、，是於電漿CVD法形成規定薄膜^電漿CVD 薄膜形成方法’運用第1至第3發明的電槳cvd穿置，首先 往處理室内導入非成膜氣體，然後導入成膜氣體，形成規 定薄膜為特徵的電漿CVD薄膜形成方法。作為非成膜氣體 有N2、H2等氣體’作為成膜氣體有si、SiH 等。首先往處理室内導入非成膜氣體，然後導又成膜^ 體，首先非成膜氣體已經進入凹部，因此後導入的成膜氣 體變得不容易進人該㈣’所以能更有效地使成膜氣體進 行電漿分離'^ 【發明之實施形態】 按照本發明，運用能夠抑制陰極電極電極累積形成臈 生成的電漿CVD裝置，改善維修週期；運用緩和陰極電極 電位斜率（以下簡稱Vc )的電漿CVI)裝置，改善陰極電極 的氟化現象。以下，一面指出裝置結構及其使用方法的 施形態，一面說明改善的效果。 圖1表示本實施形態的電漿CVD裝置。電漿CVD裝置的卢 理至1為採用内殼1 8和外殼3 1構成的能減壓的雙槽纟吉構。4 620 8 1 V. Description of the invention (5) The third invention is the plasma CVD apparatus in which the opening area of the recess has a larger opening area than that of the gas introduction hole in the second or third invention. Since the opening area of the recessed portion is larger than the opening area of the gas introduction hole, the formation of a plasma in the recessed portion does not cause a defective state of plasma generation in the gas introduction hole ^ A fourth to sixth invention is a plasma CVD method Forming a predetermined thin film ^ Plasma CVD thin film formation method 'Using the electric paddle cvd perforation of the first to third inventions, first introduce a non-film-forming gas into the processing chamber, and then introduce a film-forming gas to form a plasma CVD characterized by a predetermined thin film Thin film formation method. As the non-film-forming gas, there are gases such as N2 and H2. As the film-forming gas, there are si and SiH. The non-film-forming gas is first introduced into the processing chamber, and then the film-forming body is introduced. First, the non-film-forming gas has entered the recess, so the film-forming gas introduced later will not be easily accessible to the person. Membrane gas for plasma separation '[Embodiment of the invention] According to the present invention, a plasma CVD device capable of suppressing the accumulation of cathode electrode electrodes to form tritium is used to improve the maintenance cycle; using a method that reduces the cathode electrode potential slope (hereinafter referred to as Vc) Plasma CVI) device to improve the fluorination of the cathode electrode. In the following, the effect of the improvement will be described while pointing out the configuration of the device and the mode of use of the device. FIG. 1 shows a plasma CVD apparatus according to this embodiment. The logic 1 of the plasma CVD apparatus is a pressure-reducing double-slot grate structure composed of an inner shell 18 and an outer shell 31.

在處理室1内設有一對平行的平板電極，由陽極電&3和° 極電極1 7組成。 BA pair of parallel flat electrodes are provided in the processing chamber 1 and are composed of an anode electrode & 3 and a ° electrode 17. B

89120210.ptd 第8頁 4 620 8 1 五、發明說明（6) 透過支承陽極電極3的陽極托架1 3接地。 陰極電極17具有能施加高頻電力並能將成膜氣體供應處 理室1内的許多個氣體導入孔。 RF高頻電源9透過耦合電容器19從成膜氣體導入管15連 接到陰極電極1 7上。支承陽極電極3的陽極托架1 3透過内 殼1 8和外殼3 1接地。採用這種結構的高頻施加電路能夠於 陰極電極1 7和陽極電極3之間施加高頻電力。 透過供應管15將成膜氣體供入處理室1，經由陰極電極 1 7上設置的分散板1 2和氣體導入孔5成膜氣體被導入陽極 電極3和陰極電極17之間。陰極電極17設置的上加熱器1〇 和陽極電極3設置的下加熱器n，是為了加熱基板I使其 保持一定的溫度而設置的。 陰極電極1 7的整個上部用絕緣環8包覆，其下部的外周 以絕緣環20支承，接地的處理室！的内殼丨8與外殼31相互 絕緣。 承放基板4的陽極托架13可上下移動，陽極托架13在上 升時關閉内殼18的下部開口，形成内肖，基板4封閉於該 ::之内。陽極托架13在下降時内槽打開，基板4從作為 外槽的外殼中脫出。 巧時將陽極托架13升起’形成内槽。對陰極電極2和 =極電，之間導入的成膜氣體施加Rp高頻電源』的高頻電 使”發生電裳’在基板4上形成薄膜。由電漿處理的 =氣T的殘留氣體，透過連通處理室）的排氣管7 中未示出的排氣處理系統進行處理1中省89120210.ptd Page 8 4 620 8 1 V. Description of the invention (6) The anode bracket 1 3 supporting the anode electrode 3 is grounded. The cathode electrode 17 has a plurality of gas introduction holes that can apply high-frequency power and can introduce gas into the film-forming gas supply processing chamber 1. The RF high-frequency power source 9 is connected to the cathode electrode 17 from the film-forming gas introduction pipe 15 through a coupling capacitor 19. The anode bracket 1 3 supporting the anode electrode 3 is grounded through the inner case 18 and the outer case 31. The high-frequency application circuit having such a structure can apply high-frequency power between the cathode electrode 17 and the anode electrode 3. The film-forming gas is supplied into the processing chamber 1 through the supply pipe 15, and the film-forming gas is introduced between the anode electrode 3 and the cathode electrode 17 through the dispersion plate 12 provided on the cathode electrode 17 and the gas introduction hole 5. The upper heater 10 provided at the cathode electrode 17 and the lower heater n provided at the anode electrode 3 are provided for heating the substrate I to maintain a constant temperature. The entire upper part of the cathode electrode 17 is covered with an insulating ring 8, and the outer periphery of the lower part is supported by the insulating ring 20, and the processing chamber is grounded! The inner case 8 and the outer case 31 are insulated from each other. The anode bracket 13 on which the substrate 4 is placed can be moved up and down. When the anode bracket 13 is raised, it closes the lower opening of the inner case 18 to form an inner shaft. The substrate 4 is enclosed within the ::. When the anode bracket 13 is lowered, the inner tank is opened, and the substrate 4 is pulled out of the outer casing as the outer tank. The anode bracket 13 is raised 'to form an inner groove. The high-frequency electricity of the Rp high-frequency power source is applied to the film-forming gas introduced between the cathode electrode 2 and the pole electrode, so that "electricity" occurs to form a thin film on the substrate 4. The residual gas of plasma = gas T treated by plasma , Through the exhaust pipe 7 connected to the processing chamber) to perform treatment 1

系統、基板輸送系統以及排氣處理系統。 在本實施形態中’作為形成上述氣體導入孔5的陰極電 極1 7，為了擴大電極面積在與陽極電極3呈對向一側的面 上安裝了配置許多個凹部14的陰極電極（以下稱多孔陰極 電極）。多孔陰極電極17的凹部14與氣體導入孔5的貫穿 孔不同’屬於非貫穿孔。 凹部14如圖2(a)所示，為了避開氣體導入孔5成均勻配 置。凹部14的形狀如圖2 (b)所*，為非貫穿的圓柱形 孔。凹部14的形狀不僅限於圓柱形’其他任何形狀都可 以。例如圓錐形或三角錐等多角錐形都可以。而且，不採 用孔形而採用-定幅寬的溝槽形也可以。當採用溝槽形狀 時’其形狀可以是直線、曲線、環狀或者許多直線槽平行 配置的平行線狀以及橫槽和縱槽交又配置的格子形狀等任 意形狀。在此種場合下，溝槽的配置要避開氣體導入孔 5。凹部！4如果考慮以機加工開孔時，採用加工f用低的 錐形孔為佳。 ' 凹部14的半徑Γ如圖3所示，為成膜處理時陰極電極表面 上形成的陰極蒙皮24的厚度t的5倍〜3〇倍。具體地說，直 徑0 3mm以上的氣體導入孔的間距（圖2 ( & )中在氣體 入孔5之間距離’織體導入孔與凹部“之間的距離， 取其短者）按照下述尺寸要求為佳。 凹部4的深度由與陰極蒙皮24的關係所決定。陰極蒙皮 24在多孔的陰極電極Π整個表面上形成。：皮 有限的厚度’因此凹部14的直徑與陰極蒙皮24的厚度System, substrate transfer system, and exhaust treatment system. In this embodiment, as the cathode electrode 17 forming the gas introduction hole 5, a cathode electrode (hereinafter referred to as a porous structure) having a plurality of recesses 14 is mounted on a surface facing the anode electrode 3 in order to increase the electrode area. Cathode electrode). The recessed portion 14 of the porous cathode electrode 17 is different from the through hole of the gas introduction hole 5 ', which is a non-through hole. As shown in Fig. 2 (a), the recessed portions 14 are uniformly arranged so as to avoid the gas introduction holes 5. The shape of the recess 14 is shown in Fig. 2 (b). It is a non-through cylindrical hole. The shape of the concave portion 14 is not limited to a cylindrical shape, and any other shape may be used. Polygonal cones such as conical or triangular cones are acceptable. Moreover, instead of a hole shape, a groove shape with a fixed width may be used. When the groove shape is adopted, its shape may be any shape such as a straight line, a curved line, a ring, or a parallel line in which a plurality of linear grooves are arranged in parallel, and a lattice shape in which horizontal grooves and vertical grooves are arranged alternately. In this case, the grooves should be arranged to avoid the gas introduction holes 5. Recess! 4 If considering machining holes, it is better to use a tapered hole with a lower machining f. As shown in FIG. 3, the radius Γ of the recessed portion 14 is 5 to 30 times the thickness t of the cathode skin 24 formed on the surface of the cathode electrode during the film formation process. Specifically, the pitch of the gas introduction holes having a diameter of 0.3 mm or more (the distance between the gas introduction hole 5 and the distance between the "texture introduction hole and the recess" in Fig. 2 &), whichever is shorter) is as follows The size requirement is better. The depth of the recess 4 is determined by the relationship with the cathode skin 24. The cathode skin 24 is formed on the entire surface of the porous cathode electrode Π: the thickness of the skin is limited ', so the diameter of the recess 14 and the cathode cover Thickness of leather 24

89120210.ptd 第10胃 462081 五、發明說明（8) (1 mm左右）相比，當前者較小時，可以認為凹部1 4被埋 入陰極蒙皮24。凹部14 一旦被埋入陰極蒙皮24，則不能實 現多孔陰極電極17的面積擴大。為了擴大陰極電極17的面 積’凹部14的深度越深越好。但是，深度為5min〜數匪即 可獲得充分的效果。而且，凹部14的數量越多，電極面積 擴大的效果也越高’實際上’應該兼顧凹部丨4的數量及多 孔陰極電極自身的強度。 圖4表示氣體導入孔5及凹部14呈現的多孔陰極電極17表 面圖的一例。在該例中，氣體導入孔5直徑為$ 〇. 8min，以 11 mm的間距成均等的菱形配置。凹部1 4的直徑為必3mm， 以4mm的間距成均等的六邊形配置。 立使用上述多孔陰極電極17，在成膜處理時陰極蒙皮24凹 4 1 4内形成凹部’可使陰極蒙皮電位斜率Vc更加緩一 些〇 蒙Vc從理論上看’與公式—{(陽極蒙皮面積）* _ (陰極 =皮面積）4丨一 —（1 )成比例關係。這是因為與陰極 =f電位斜率Vc相關的蒙皮電壓V!、V2 (參照圖6 )可用下 W2 = (a2/a〗）4 — — — (2 ) j中A1、A2 :電極面積 孔ί i ί形態的多孔陰極電極17的面積比僅帶有氣體導入 、、的陰極電極面積要大，因此將面積值代入公式 、丄J ，可以得至眘89120210.ptd The 10th stomach 462081 V. Description of the invention (8) (about 1 mm) When the former is smaller, it can be considered that the recesses 14 are buried in the cathode skin 24. Once the recessed portion 14 is buried in the cathode skin 24, the area of the porous cathode electrode 17 cannot be enlarged. In order to increase the area of the cathode electrode 17, the depth of the recess 14 is as deep as possible. However, a depth of 5 minutes to a few bands can achieve sufficient results. Furthermore, the larger the number of the recesses 14 is, the higher the effect of increasing the electrode area is. 'Actually', the number of the recesses 4 and the strength of the porous cathode electrode itself should be taken into consideration. FIG. 4 shows an example of a surface view of the porous cathode electrode 17 shown in the gas introduction hole 5 and the recessed portion 14. As shown in FIG. In this example, the gas introduction holes 5 have a diameter of $ 0.8 minutes and are arranged in an equal rhombic shape at a pitch of 11 mm. The diameter of the recesses 14 must be 3 mm, and they are arranged in a regular hexagon at a pitch of 4 mm. By using the porous cathode electrode 17 described above, a recessed portion of the cathode skin 24 is formed in the recess 4 1 4 during the film formation process. The cathode skin potential slope Vc can be made slower. In theory, Vc and the formula-{(anode Skin area) * _ (cathode = skin area) 4 丨-(1) proportional relationship. This is because the skin voltage V !, V2 (refer to Fig. 6) related to the cathode = f potential slope Vc can be used under W2 = (a2 / a) 4---(2) A1, A2 in j: electrode area hole The area of the porous cathode electrode 17 in the form of ί i is larger than the area of the cathode electrode with only gas introduction. Therefore, substituting the area value into the formula, 丄 J, can be used with caution.

Vc μμ ,, 貫施形態的較小數值。Vdc與較小數值的 l 力乂 tC* 例，因 V H l 0也較小。Vdc的電場E產生的+離子加速Vc μμ ,, A smaller value of the morphology. For example, Vdc and the smaller force l tC *, because V H l 0 is also smaller. + Ion acceleration generated by electric field E of Vdc

462081462081

由 式F = qE --- (3 ) 決疋’因此Vcd越低，客a 這樣，抑制了多孔陰極電極=極電極的離子碰撞越小。 表面結構（原子）的濺 面的1^離子的碰撞，使電極 次電子的釋放受到抑制 I以及多孔陰極電極表面的2 板4的污#^，7伴^/ \因此有效地抑制金料異物對基 率都得到改善。此外，抑制了 子的溢 的電聚生成效率提高，因此不像習知技術那 即可以生成電毁。這樣-來，成膜處理 化。（#多孔陰極電極表面的狀態，能使成膜速度穩定 邻14 ,避開氣體導入孔5 ’如圖2或圖4所示，透過配置凹 中Φ 士可j抑制在凹部14形成薄膜。這是由於在成膜處理 韭士#膜氣體S 1 H4不容易進入（置換）凹部1 4的内部、而 氣體nh3、N2、h2滞留於凹部14的緣故。對這—原 邱二A如下分析。當僅有導入孔5時，在氣體導入孔5的内 =成膜反應前的新的SiH4的分壓較高，當按照本實施形 :子在有凹部1 4時，不會從非貫穿孔的凹部丨4的内部供應 乳體」氣體滯留於凹部14内。因此，凹部14内未反應的 =I刀壓較低，由擴散性較強的非成膜氣體帅3、h、&的 为壓所佔據。 參照圖5進行說明。該圖表示出並不是從氣體導入孔5直According to the formula F = qE --- (3), the lower Vcd is, the smaller the value of cd is, and the smaller the ionic collision of the porous cathode electrode is suppressed. The collision of 1 ^ ions on the sputtering surface of the surface structure (atoms) inhibits the release of the secondary electrons of the electrode and the dirt on the surface of the porous cathode electrode 2 ^ 4, 7 ^^ \ Therefore it effectively suppresses gold foreign matter The base rate has been improved. In addition, the generation efficiency of the electropolymerization, which suppresses the overflow of the ions, is improved, so unlike the conventional technology, electrical destruction can be generated. In this way, the film-forming treatment is performed. (# The state of the surface of the porous cathode electrode can stabilize the film formation speed to 14 and avoid the gas introduction hole 5 ′ as shown in FIG. 2 or FIG. 4. Through the arrangement of the recess Φ Sj can suppress the formation of a thin film in the recess 14. This It is because the gas # 1 film S1 H4 in the film formation process does not easily enter (replace) the inside of the recessed portion 14 and the gases nh3, N2, and h2 stay in the recessed portion 14. This is the analysis of the original Qiu Er A as follows. When there is only the introduction hole 5, the partial pressure of the new SiH4 in the gas introduction hole 5 = before the film-forming reaction is high. When according to this embodiment, when the recessed portion 14 is provided, it will not pass from the non-through hole. The internal supply of milk in the recessed part 4 ”gas is trapped in the recessed part 14. Therefore, the unreacted = I knife pressure in the recessed part 14 is low, and the non-film-forming gas 3, h, & It is occupied by pressure. It will be described with reference to FIG. 5. This diagram shows that the gas is not straight from the gas introduction hole 5.

^62081 五、發明說明（10) ' 接傳輸能量，而是從凹部14間接地傳輸能量。首先RF高頻 電源對多孔陰極電極1 7提供能量（電力），沿著多孔陰 極電極1 7的表面形成的陰極蒙皮24上將能量傳輪給電子。 在陰極蒙皮24得到的高能電子於負輝光22將能量傳輪給成 膜氣體中的分子。接受能量的成膜氣體中的分子在電離作 用下分解成具有更高能的活化粒子（離子、原子團）。圖 中25是陽極電極柱'26是陽極蒙皮、27是堆積面、28是基 板表面。 非成膜氣體N、Η的分子量小、移動速度快（擴散性好 )，因此認為在凹部14主要存在Ν和Η。於凹部14，因為中 空陰極電極現象上述的電離作用非常強，能量密度很高。 能量具有從高密度向低密度傳輸的特性，因此認為凹部i 4 發生的高密度能量是以凹部14為中心像傳導波一樣以球面 形式向外部擴散。圖5中的箭頭表示這種擴散的形式。可 以推測，這種能量的擴散是透過粒子之間相互碰撞的作用 (主要是質量相同的粒子之間互相碰撞）所引起的。 始於RF電力的能量，透過凹部Η發生的負輝光可 地傳送給從氣體導入孔5供應的主成膜氣體，並將主 氣體分解。這樣’與習知的方法相比，為了 ：質 量所需要的RF電力可以大幅度降低。 胡联負 非直接將主成膜氣體導入凹部丨4的機率 部14 ’ Ν2、Μ3及其解離分子和原子的存在機二；：：： 成膜氣體S i Η*的存在機率卻降低。所以，即使在°为 氣體的解離作用增大，也不引起成膜作凹。卩14， 户用 可以延長維修^ 62081 V. Description of the invention (10) 'The energy is transmitted indirectly, but the energy is transmitted indirectly from the recess 14. First, the RF high-frequency power supply provides energy (electricity) to the porous cathode electrode 17 and transfers the energy to the electrons on the cathode skin 24 formed along the surface of the porous cathode electrode 17. The high-energy electrons obtained at the cathode skin 24 transfer the energy to the molecules in the film-forming gas in the negative glow 22. The molecules in the film-forming gas that receive energy are decomposed into activated particles (ions, atomic groups) with higher energy under the action of ionization. In the figure, 25 is an anode electrode column 26 is an anode skin, 27 is a stacking surface, and 28 is a substrate surface. The non-film-forming gases N and rhenium have a small molecular weight and a fast moving speed (good diffusivity). Therefore, it is considered that N and rhenium are mainly present in the recess 14. In the concave portion 14, the above-mentioned ionization effect is very strong due to the hollow cathode electrode phenomenon, and the energy density is high. Since energy has a characteristic of transmitting from high density to low density, it is considered that the high-density energy generated in the concave portion i 4 is diffused to the outside in the form of a spherical surface like a conductive wave with the concave portion 14 as the center. The arrows in Figure 5 indicate this form of diffusion. It can be speculated that this diffusion of energy is caused by the collision of particles (mainly the collision of particles of the same mass). The energy from RF power is transmitted to the main film-forming gas supplied from the gas introduction hole 5 through the negative glow generated through the recess Η, and the main gas is decomposed. In this way, compared with the conventional method, the RF power required for quality can be greatly reduced. Hu Lianmin Probability of indirectly introducing the main film-forming gas into the recessed portion 14 ′ N2, M3 and the existence opportunity of dissociated molecules and atoms thereof 2: :: The probability of the existence of the film-forming gas S i Η * is reduced. Therefore, even if the dissociation effect of the gas increases at °, the film formation is not caused to be concave.卩 14, users can extend the maintenance

462081 五、發明說明（11) 週期。 非成膜氣體滯留於凹部14的内部，所以該區内部不容易 進行累積成膜，在一個處理週期内可以增加成膜的基板 數。 即使將主成膜氣體與非成膜氣體同時導入氣體導入孔5 時’同樣能夠獲得上述的R F電力的降低、維修週期增長、 以及一個處理週期内可以成膜的基板數增加等效果。但 是’從氣體導入孔5首先導入非成膜氣體，施加RF電力， 然後再導入成膜氣體時’上述效果更佳。據推測，這是由 於在凹部内主成膜氣體的存在機率降低的緣故。 【實施例1】 但是，在電漿CVD成膜中，要求降低放電阻抗。規定的 放電阻抗的參數有Vdc和Vpp。如圖6 (a )所示，vdc表示 起因於電極的非對稱性的在陰極電極丨7和陽極電極3之間 施加的直流偏壓。如圖6 (b )所示，Vpp是施加於陽極電 極3和陰極電極17之間的高頻電壓（波峰—波峰）。 圖7表示出透過在陰極電極17設置凹部14降低、Vpp 的只驗結果。在實施例中將圖1所示的電漿裝置使用了 習知的例中圖8所示的電漿CVD裝置。在實驗時广僅更換了 形成直徑0 3nm凹部的多孔陰極電極（實施例丨）、形成直 徑0 2mm凹部的多孔陰極電極（實施例2 )、不形成凹部的 扁平陰極電極（習知例）等3種陰極電極，不更換豆他硬 體，比較了放電特性及S i N的膜質。 八 玻璃基板尺寸為37 X 47cm2、基板溫度為29(rc，按以下 _462081 V. Description of Invention (11) Cycle. The non-film-forming gas stays inside the recessed portion 14, so it is not easy to accumulate film formation inside the region, and the number of substrates to be formed can be increased in one processing cycle. Even when the main film-forming gas and the non-film-forming gas are introduced into the gas introduction hole 5 at the same time, the effects of the aforementioned reduction in RF power, the increase in the maintenance cycle, and the increase in the number of substrates that can be formed in one processing cycle can be obtained. However, the above-mentioned effect is better when "the non-film-forming gas is first introduced from the gas introduction hole 5, and RF power is applied, and then the film-forming gas is introduced." It is presumed that this is because the presence of the main film-forming gas in the recessed portion is reduced. [Example 1] However, in plasma CVD film formation, it is required to reduce the discharge resistance. The specified parameters of the discharge impedance are Vdc and Vpp. As shown in FIG. 6 (a), vdc represents a DC bias voltage applied between the cathode electrode 7 and the anode electrode 3 due to the asymmetry of the electrode. As shown in FIG. 6 (b), Vpp is a high-frequency voltage (peak-to-peak) applied between the anode electrode 3 and the cathode electrode 17. FIG. 7 shows the results of the test only by lowering Vpp by providing the recess 14 in the cathode electrode 17. In the embodiment, the plasma CVD apparatus shown in FIG. 1 is used as the plasma CVD apparatus shown in FIG. 8 in the conventional example. During the experiment, only the porous cathode electrode with a concave portion with a diameter of 0.3 nm (Example 丨), the porous cathode electrode with a concave portion with a diameter of 0.2 mm (Example 2), and the flat cathode electrode without a concave portion (a conventional example) were replaced. Three types of cathode electrodes were used without changing the other hard bodies. The discharge characteristics and the film quality of S i N were compared. 8. The size of the glass substrate is 37 X 47cm2, and the temperature of the substrate is 29 (rc, according to the following _

89120210.ptd 五、發明說明（12) 條件進行比較。 •成膜條件89120210.ptd V. Description of the invention (12) Conditions are compared. • Film forming conditions

流量：SiH4/NH3/N2 流量= 80sccm/240sccm/l〇〇〇sccm 壓力：239_ 4Pa/212.8Pa/266Pa RF 電力：700W/850W/1000W •關於氣體潔淨條件，實施例1和2及比較例均與成膜條件 相同。 ”、” •殘渣條件也與成膜條件相同。 極電極的撤棬 •氣體導入孔：0 0 8mm、956個呈均等配置（氣體導入孔 直徑的大小定為不發生陰極蒙皮的必〇.8min)。 •陰極蒙皮面積/陽極蒙皮面積比 ψomm/ φ2mm 表示大約相 等的意思，下同） 知陰極電極的賴.格 •除了沒有凹部以外，與多孔陰極電極相同。 •陰極蒙皮面積/陽極蒙皮面積=:〇.5 陰極電極面積和陽極電極面積很容易計算求出， ，f電漿發生區的限制’因此不能單純考慮與電極面積之 t目對應。確定電漿發生區是很困難的。因此 比只能作為參考值。 I的面積 義圖7中各個評價專案，對於電漿CVD薄膜通常具有如下意Flow rate: SiH4 / NH3 / N2 Flow rate = 80sccm / 240sccm / l00〇sccm Pressure: 239_ 4Pa / 212.8Pa / 266Pa RF Power: 700W / 850W / 1000W • Regarding the gas clean conditions, Examples 1 and 2 and Comparative Examples are all It is the same as the film formation conditions. ”,” • Residual conditions are the same as film formation conditions. Removal of the electrode • Gas introduction holes: 0.8 mm, 956 are equally arranged (the diameter of the gas introduction holes is determined to be 0.8 minutes without the occurrence of cathode skin). • Cathode skin area / anode skin area ratio ψomm / φ2mm means approximately the same meaning, the same applies hereinafter. Know the cathode of the cathode. Except that there is no recess, it is the same as the porous cathode electrode. • Cathode skin area / anode skin area =: 0.5 The area of the cathode electrode and the area of the anode electrode can be easily calculated and calculated. Therefore, the limit of the plasma generation area cannot be considered simply as the t-correspondence of the electrode area. It is difficult to determine the plasma generation area. Therefore, the ratio can only be used as a reference value. The area of I means that each evaluation project in Figure 7 has the following meanings for plasma CVD films:

89120210.ptd 第15頁 4 620 8 1 五、發明說明（13) —*-- (1 ) Vdc、Vpp (參照圖6 )89120210.ptd Page 15 4 620 8 1 V. Description of the invention (13) — *-(1) Vdc, Vpp (refer to Figure 6)

Vpp越低，就越容易形成低阻抗的電漿。 .^ 』像的雷/j 進行比較時，根據歐姆定律（I X V ) ，Vpp越小 ： 流越大。Vdc越低’陰極蒙皮面積/陽極蒙皮面積則電 大’就越不容易損害陰極電極表面。 比越 (2 ) WER 比 —作為濕式腐蝕比的近似表示，可以比較熱氧化 薄，表示腐蝕快慢多少倍的數值。該數值越胺睹 辟。 * 腾貞越The lower the Vpp, the easier it is to form a low impedance plasma. . ^ ”When comparing the Ray / j of the image, according to Ohm's law (I X V), the smaller Vpp is: the larger the flow. The lower the Vdc, the larger the cathode skin area / the anode skin area, the less easily the cathode electrode surface will be damaged. (2) WER ratio—As an approximate expression of the wet corrosion ratio, it can be compared with thermal oxidation, which indicates how many times the corrosion is faster or slower. This value is clearer. * Teng Zhenyue

(3 ) RI 該值越 表示折射率。該值對電漿SiN為1. 8〜2. 0左古 大，膜質越好。 (4 )應力 (負方向）， 值，N-H/Si -Η 膜質越好。 生產率越高。 該值表示膜的應力，其值越小 (5 ) IR-波峰比 表示電磁波吸收率的比率的數(3) RI The higher the value, the higher the refractive index. This value is 1. 8 ~ 2. 0 for the plasma SiN, and the better the film quality. (4) The value of stress (negative direction), the better the N-H / Si-Η film quality. The higher the productivity. This value indicates the stress of the film, the smaller the value. (5) IR-peak ratio The number indicating the ratio of the electromagnetic wave absorptivity.

Si-N/Si_H越大，膜質越好。The larger the Si-N / Si_H, the better the film quality.

(6 ) DR 二成二速度’成膜速度越快 表示膜厚的均勻性，访古 從圖7可以看出，，於零時為佳。 質（應力、渴式腐：玄& ’ σ及習知的成臈條件下的膜 順序是實施例1、2和η眘膜速度4 )’依次由好變差的 2和、知貫例，因此，透過比較使膜質一(6) DR Two-to-two speed 'The faster the film-forming speed indicates the uniformity of film thickness, it can be seen from Fig. 7 that it is better at zero. Quality (stress, thirst-type decay: the order of the membrane under the conditions of σ and the conventional formation is Example 1, 2 and η membrane speed 4) 'in order from good to poor, and Therefore, through comparison,

4 62081 五、發明說明（14) 致的成膜條件，設置帶有凹部的多孔陰極電極可以降低 Vdc和Vpp，可以看出降低RF電力的效果。尤其是凹部的小 孔直徑為必2mm〜^3mm時，能大幅度降低vdc。 【實施例2】 在本實驗中表明，透過在陰極電極17上設置凹部14，使 頻’的維修週期、電極氟化引起的成膜速度下降以及頻繁 的電極再生週期獲得改善。關於實驗内容，除了下述内容 以外’其他内容與實施例1相同。 比較物件有兩種：凹部小孔直徑為0 3min的多孔陰極電 極（實施例）和沒有凹部的扁平陰極電極（習知例）。 實驗的成膜條件： 流量：SiH4/NH3/N2 流量=100sccm/3 0 0 sccm/ 1 0 0 0 sccin 壓力：239.4Pa RF 電力：7 0 0W 習知的成膜條件： /瓜量 ’ $1114/抑3/化流量=100sccm/300sccm/1000sccm 壓力：66. 5Pa4 62081 V. Description of the invention (14) The conditions for film formation are the same. The provision of a porous cathode electrode with a recess can reduce Vdc and Vpp, and the effect of reducing RF power can be seen. In particular, when the diameter of the small hole in the recess is 2 mm to 3 mm, vdc can be greatly reduced. [Example 2] In this experiment, it has been shown that by providing the recessed portion 14 on the cathode electrode 17, the maintenance cycle of frequency ', the reduction of the film-forming speed caused by electrode fluorination, and the frequent electrode regeneration cycle can be improved. The experimental content is the same as that of Example 1 except for the following content. There are two types of comparison objects: a porous cathode electrode with a small hole diameter of 0 3 min (example) and a flat cathode electrode without a concave portion (conventional example). Experimental film formation conditions: flow rate: SiH4 / NH3 / N2 flow rate = 100 sccm / 3 0 0 sccm / 1 0 0 0 sccin pressure: 239.4Pa RF power: 7 0 0W conventional film formation conditions: / melon amount '$ 1114 / 5 / Pad flow = 100sccm / 300sccm / 1000sccm Pressure: 66.5Pa

RF 電力：1 300W 實驗結果示於表1〜表3。 首先表不對頻繁的週期性處理的改善效果。 【表1】 裝置 — _ _ --- ——- — '-個週期内連續成膜厚度（注1) 習知例 3 0 0 0 nm 實施例 9 0 0 0 ηιπRF power: 1 300W The experimental results are shown in Tables 1 to 3. First, it shows the improvement effect of frequent periodic processing. [Table 1] Apparatus — _ _ --- ——- — '-Continuous film thickness in one cycle (Note 1) Conventional example 3 0 0 0 nm Example 9 0 0 0 ηιπ

^ 62081^ 62081

五、發明說明（15) (注1 ),在基板上可連續形成尺寸為1〇〇〇以上的siN顆 粒的膜厚（概算值）。 在實施例中一個週期内可連續形成較厚的薄膜，這是由 於多孔陰極電極減小了濺設現象的緣故。由此，在一個週 期内可以處理的基板數可以增加3倍左右。 下面給出伴隨多孔陰極電極的氟化對成膜速度下降現象 的改善效果。 【表2】 裝置 Vdc(V) Vpp(V) ------—— 初期速度下降率（注2 ) 習知例 ~~ 1 5 2 〜 704 〜768 ------------------—- —1. 2%/週期 一 140 實施例 + 3 0〜 484 〜51 6 〜0. 005%/週期 —3 0 (注2 ) : 1〜1 〇週期的初期成膜速度下降率（平均值）。 從上述結果看出’初期成膜速度下降率約改善240倍。 :面給出對於多發異常放電的多孔陰極電極再生的改善 ίϊ:!裏所說的再生是指多孔陰極電極氟化物的研磨去 _裝置 陰極電極再生頻率（注3 ) 習知例 約5 0 0週期一 a 實施例 約5 0 〇 〇 〇週期一次 J %开节双藏时進；ί亍 極電極的再生頻率（概算值）5. Description of the invention (15) (Note 1), the film thickness (estimated value) of siN particles with a size of more than 1000 can be continuously formed on the substrate. In the embodiment, a thicker film can be continuously formed in one cycle because the porous cathode electrode reduces the sputtering phenomenon. As a result, the number of substrates that can be processed in one cycle can be increased by about three times. The effect of improving the decrease in film formation rate by the fluorination of the porous cathode electrode is shown below. [Table 2] Device Vdc (V) Vpp (V) ---------- Initial speed decrease rate (Note 2) Known example ~~ 1 5 2 ~ 704 ~ 768 --------- --------- ----1.2% / cycle 1 140 Example + 3 0 ~ 484 ~ 51 6 ~ 0.005% / cycle-3 0 (Note 2): 1 ~ 1 〇 cycle The rate of decrease in the initial film formation rate (average). From the above results, it can be seen that the decrease rate of the initial film formation speed is improved about 240 times. The following shows the improvement of the regeneration of porous cathode electrodes with multiple abnormal discharges: The regeneration described in! Refers to the removal of fluoride from porous cathode electrodes _ Device cathode electrode regeneration frequency (Note 3) Conventional example about 5 0 0 Cycle 1a Example about 50,000 cycles once J% open joint double-hiding time; 电极 electrode regeneration frequency (estimated value)

89120210.Ptd 第18頁 462081 五、發明說明（16) 根據上述結果，多孔陰極電極的連續使用壽命可以延長 1 0 0倍。即，多孔陰極電極即使發生氟化，在凹部的電漿 效率仍可提高，由於生成的電漿與2次電子的釋放無關， 受電極表面狀態的影響报小，因此維修週期可以相應延 長。 【實施形態及實施例之效果】 , ’ 上所述’按照本實施形態和實施例’在多孔陰極電極 上設置凹部，與不設置凹部的習知陰極電極相比，具有以 下優點。 〇)在一個週期内可以處理的基板數增加。 $ 可以減小因多孔陰極電極氟化引起的初期成膜速 度的降低。 〉2丨可以延長多孔陰極電極的連續使用壽命。 為了彳寸到所要求的膜質，可以降低必要的RF電 【發明之效果】 極的1m在第2電極設置凹槽，因此可防止對第2電 2電極达ώ成膑，大幅度延長維修週期。採用凹部可使第 氣化:象皮電位的斜率平緩，s此可大帽度改善第 和成膜氣體根方法’分先後分別導入非成膜氣體 質量良好的電議V膜，，充分發揮本裝置的功能’形成 【元件編號之說明】89120210.Ptd Page 18 462081 V. Description of the invention (16) According to the above results, the continuous service life of the porous cathode electrode can be extended by 100 times. That is, even if the porous cathode electrode is fluorinated, the plasma efficiency in the recess can still be improved. Since the generated plasma has nothing to do with the release of secondary electrons, it is less affected by the surface state of the electrode, so the maintenance cycle can be extended accordingly. [Effects of the embodiment and the examples] According to the above-mentioned embodiment and the embodiment, the provision of the recessed portion on the porous cathode electrode has the following advantages compared with a conventional cathode electrode having no recessed portion. 〇) The number of substrates that can be processed in one cycle increases. $ Can reduce the decrease of the initial film formation rate caused by the fluorination of the porous cathode electrode. 〉 2 丨 It can extend the continuous service life of the porous cathode electrode. In order to achieve the required film quality, the necessary RF power can be reduced. [Effect of the invention] A groove is formed in the second electrode for 1m of the electrode, so the second electrode can be prevented from being sold and the maintenance period can be greatly extended . The use of the recess can make the gasification: the slope of the elephant skin potential is gentle, which can improve the degree of the first degree, and the film formation gas root method is introduced separately into the non-film-forming gas with good quality of the V film, so as to make full use of this Function of the device 'formation [Description of component number]

89120210.ptd 第19頁 4 6 20 8 1 五、發明說明（17) 2 陽極電極 4 基板 5 氣體導入孔 7 排氣管 9 R F南頻電源 14 凹部 15 成膜氣體供應管 17 多孔陰極電極89120210.ptd Page 19 4 6 20 8 1 V. Description of the invention (17) 2 Anode electrode 4 Substrate 5 Gas introduction hole 7 Exhaust pipe 9 R F South frequency power supply 14 Recess 15 Film-forming gas supply tube 17 Porous cathode electrode

89120210.ptd 第20頁 462081 圖式簡單說明 圖1係根據本實施形態的處理室的簡要剖面圖。 a 圖2係根據本實施形態的多孔陰極電極的說明圖， 是表面圖，（b)是剖面圖。 圖3係根據本實施形態的凹部和氣體導入孔的尺寸說明 圖。 圖4係根據本實施形態的多孔陰極電極的表面圖。 圖5係表示根據本實施形態的凹部能量傳遞的 向示意圖。 0按的奴 圖6(a)、（b)係Vdc和Vpp的說明圖。 圖7係表示實施例和比鲂也 囿R孫护媸羽4 υ 比季乂例的實驗結果的表。 圖Μ糸根據習知例的處理 ^ J处延至的簡要剖面圖。89120210.ptd Page 20 462081 Brief description of the drawings Fig. 1 is a schematic sectional view of a processing chamber according to this embodiment. a FIG. 2 is an explanatory view of a porous cathode electrode according to this embodiment, and is a surface view, and (b) is a cross-sectional view. Fig. 3 is a diagram illustrating the dimensions of the recessed portion and the gas introduction hole according to the embodiment. FIG. 4 is a surface view of a porous cathode electrode according to this embodiment. Fig. 5 is a schematic diagram showing the direction of energy transmission in the recessed portion according to this embodiment. Figure 6 (a) and (b) are explanatory diagrams of Vdc and Vpp. Fig. 7 is a table showing the experimental results of the examples and examples of 鲂 鲂 鲂 孙孙 护 媸 羽 4 υ 乂 乂. FIG. 24 is a schematic cross-sectional view extending to a place according to a conventional example.

89120210.ptd 第21頁89120210.ptd Page 21

Claims (1)

4 6 20 814 6 20 81 1. 一種電漿CVD裝置，其特徵為裝設有： 可以減壓的處理室、該處理室内 具有載置基板並接地的第丨電桎及 ' 一對平板電極 ^〜弟i电極及具有許多璃 可施加高頻波的第2電極、透過第2電極的氣導入孔並 1和第2電極之間供應氣體的成膜氣體供應處』 室排氣的排氣管等；並與上述第】電極呈mu 極的面上，設置有凹部。 ）上边弟2電 2 _如申請專利範圍第1項之電渡匸v d #罟，甘a 目女q < 电釆L νϋ泉罝，其中上述凹部 八有3mm以上而小於上述氣體導入孔間距的幅寬。 3.如申請專利範圍第！或2項之電漿以^裝置，’其中上述 凹部的開口面積具有大於上述氣體導入孔的開口面積。 4_種電漿CVD薄膜形成方法，係採用電漿CVD法形成規 定的薄臈，其特徵為： 使用裝設有可以減壓的處理室 '該處理室内配置的一對 平板電極具有載置基板並接地的第丨電極及具有許多氣體 導入孔並可施加高頻波的第2電極、透過第2電極的氣體導 入孔於第1和第2電極之間供應氣體的成膜氣體供應管、從 上述處理室排氣的排氣管、並與上述第1電極呈對向的上 述第2電極的面上設置有凹部電漿CVD裝覃，藉由首先往上 述處理室内導入非成膜氣體’然後導入成膜氣體，以形成 上述規定薄膜。 5.如申請專利範圍第4項之電漿CVD薄臈形成方法，其中 使用上述凹部具有3mm以上而小於上述氣體導入孔間距的 幅寬的上述電漿CVD裝置，以形成上述規定薄膜。1. A plasma CVD apparatus, comprising: a pressure-reducible processing chamber, a processing chamber having a substrate on which a substrate is placed and grounded, and a pair of flat electrodes ^ ~ Many glass can apply high-frequency waves to the second electrode, a film-forming gas supply point that passes through the gas introduction hole of the second electrode and supplies the gas between the 1 and the second electrode, and the exhaust pipe of the chamber exhaust; A concave portion is provided on the surface of the mu pole. ） Upper brother 2 electricity 2 _ If the electric range 申请 vd # 罟 of the scope of patent application, 甘 a 目 q < electricity 釆 L νϋ 泉 罝, where the above-mentioned recesses are more than 3mm and smaller than the above-mentioned gas introduction hole spacing Width. 3. If the scope of patent application is the first! Or the plasma device according to item 2, wherein the opening area of the recessed portion has an opening area larger than that of the gas introduction hole. 4_ Plasma CVD thin film formation method, which uses plasma CVD method to form a predetermined thin film, which is characterized by: using a processing chamber equipped with a reduced pressure 'a pair of flat electrodes arranged in the processing chamber has a mounting substrate And a grounded second electrode, a second electrode having a plurality of gas introduction holes, and a high-frequency wave can be applied, a film-forming gas supply pipe that supplies gas between the first and second electrodes through the gas introduction holes of the second electrode, and The exhaust pipe of the chamber exhaust is provided with a recessed plasma CVD device on the surface of the second electrode which is opposite to the first electrode. Film gas to form the above-mentioned prescribed thin film. 5. The plasma CVD thin film formation method according to item 4 of the application, wherein said plasma CVD apparatus having a width of 3 mm or more and a width smaller than the pitch of said gas introduction holes is used to form said predetermined thin film. 89120210.ptd 第22頁 462081 六、申請專利範圍 6.如申請專利範圍第5項之電漿CVD薄膜形成方法，其中 使用上述凹部開口面積具有大於上述氣體導入孔的開口面 積的上述電漿CVD裝置，以形成上述規定薄膜89120210.ptd Page 22 462081 6. Application patent scope 6. The plasma CVD thin film forming method as described in item 5 of the patent application scope, wherein the above plasma CVD device with an opening area of the recessed portion having an opening area larger than that of the gas introduction hole is used. To form the prescribed film 89120210.ptd 第23頁89120210.ptd Page 23