TW459072B - Conductive particles and method and device for manufacturing the same, anisotropic conductive adhesive and conductive connection structure, and electronic circuit components and method of manufacturing the same - Google Patents

Conductive particles and method and device for manufacturing the same, anisotropic conductive adhesive and conductive connection structure, and electronic circuit components and method of manufacturing the same Download PDF

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Publication number
TW459072B
TW459072B TW87105606A TW87105606A TW459072B TW 459072 B TW459072 B TW 459072B TW 87105606 A TW87105606 A TW 87105606A TW 87105606 A TW87105606 A TW 87105606A TW 459072 B TW459072 B TW 459072B
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Taiwan
Prior art keywords
fine particles
electronic circuit
plating solution
plating
conductive
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TW87105606A
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Chinese (zh)
Inventor
Yoshiaki Tanaka
Yoshiaki Kodera
Manabu Matsubara
Kazuhiko Kanki
Tatsuo Suzuki
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Sekisui Chemical Co Ltd
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Publication of TW459072B publication Critical patent/TW459072B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers

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  • Electroplating Methods And Accessories (AREA)

Abstract

A method for making conductive particles that efficiently permit a plated layer of uniform thickness to be formed over each of all particles without aggregating the particles in a plating liquid. The conductive particle making apparatus comprises: a disk-shaped bottom plates secured to the top part of a vertical drive shaft; a porous body arranged on the upper surface of the outer periphery of the bottom plate and allowing only the plating liquid to pass there through; a contact ring arranged on the upper surface of the porous body to conduct electricity; a hollow cover including a truncated cone cover with an opening at its upper central portion and a hollow cylinder of the same diameter as that of the opening attached to the upper end of the truncated cone cover, the upper end portion of the hollow cylinder being folded back on the inner wall side thereof; a rotatable processing chamber formed so as to hold the porous body and the contact ring between the outer periphery of the hollow cover and the bottom plate; a supply pipe to supply the plating liquid from the opening into the processing chamber; a container to receive the plating liquid scattered from the pores of the porous body; a discharged pipe to discharge the plating liquid collected in the container; and an electrode inserted from the opening to contact the plating liquid.

Description

H7 公告本 五、發ι明説明一 [技術領域] 本發明係有關於在鍍液中微粒子不致凝集、可形成厚 度極均一的鍍層之導電性微粒子之製造方法，其製造裝置 ，導電性微粒子，以及利用該導電性微粒子之各向異性導 電接著劑及電連接構造體。 本發明另有關於，透過導電性微粒子以將使用於電子 領域之半導體元件、水晶振盪器、光電變換元件等電子電 路元件與電子電路基板以微細電極連接的形式連接之電子 電路裝置，該電子電路裝置所用之電子電路元件、電子電 路基板及導電性微粒子，以及該電子電路裝置之製造方法 [技術背景] .導電性材料有導電性膠、導電性接著舞j、各向異性導 電挫膜等，導電性材料中係使用導電性微粒子與樹脂所構 成的導電性組成物。作爲該導電性微粒子，一般係使用金 屬粉、碳粉、表面設有金屬鍍層之微粒子等。 這種表面具有金屬鍍層之導電性微粒子的製造方法， 例如於特開昭52-147797號公報、特開昭61-277104號公 報、特開昭61-277105號公報、特開昭62-185749號公報 、特開昭63-190204號公報、特開平卜225776號公報、特 開平1-247501號公報 '特開平4-147513號公報等已揭示 出。 這些製造方法中，要進行粒徑5000//m以上的微粒子 之鑛敷時’一般是使用缸筒鍍敷裝置。該缸筒鍍敷裝置， ^裝-- (請先閱讀背而之注$項再填寫本頁)H7 Bulletin V. Detailed Description 1 [Technical Field] The present invention relates to a method for manufacturing conductive fine particles that do not agglomerate in a plating solution and can form a plating layer having an extremely uniform thickness. And an anisotropic conductive adhesive using the conductive fine particles and an electrical connection structure. The present invention also relates to an electronic circuit device that uses conductive fine particles to connect electronic circuit elements such as semiconductor elements, crystal oscillators, and photoelectric conversion elements used in the electronic field with electronic circuit substrates in the form of fine electrodes. Electronic circuit elements, electronic circuit substrates, and conductive particles used in the device, and a method for manufacturing the electronic circuit device [technical background]. Conductive materials include conductive glue, conductivity, and anisotropic conductive films. The conductive material is a conductive composition composed of conductive fine particles and a resin. As the conductive fine particles, metal powder, carbon powder, fine particles having a metal plating layer on the surface, etc. are generally used. Such a method for producing conductive fine particles having a metal plating layer on the surface is disclosed in, for example, JP-A-52-147797, JP-A-61-277104, JP-A-61-277105, and JP-A-62-185749. Gazette, JP-A No. 63-190204, JP-A No. 225776, JP-A No. 1-247501, JP-A No. 4-147513, etc. have been disclosed. In these manufacturing methods, when a deposit of fine particles having a particle diameter of 5000 // m or more is used, a cylinder plating device is generally used. The cylinder plating equipment, ^ equipment-(Please read the note of the back and then fill in this page)

*1T 經濟部中央標準局員工消费合作社印製 本紙張尺度適用中國國家摞準（CNS ) Λ4規梠（210X297公处〉 Λ7 459072 五、發明説明（\ ) 係在浸漬於鍍液中之可旋轉的多角形筒狀缸筒內置入被鍍 物，在缸筒旋轉下令配置於缸筒內的陰極和被鍍物接觸以 進行電鍍。 然而，若藉由使用前述缸筒鍍敷裝置之方法以進行粒 徑5000ym以下的微粒子的鍍敷，鍍液中之微粒子是在凝 集狀態下被鑛敷，會產生無法得出單粒子的問題，又因粒 子無法均一地鍍敷而會產生鍍層厚不均一的問題。 基於此，作爲解決前述問題的裝置，例如有以下裝置 被提出。特開平7-118896號公報中揭示出一種導電性微粒 子之製造裝置，係具有：固定於垂直驅動軸的上端部之圓 盤狀底板，配置於下述多孔體上面之通電用接觸環，配置 於上述接觸環的附近之僅鑛液可通過之多孔體，於上部中 央具有開口部之圓錐台狀的中空罩，形成於上述中空罩的 外周部與前述底板間之夾住上述接觸環的處理室，將鍍液 從上述開口部供給至上述處理室之供給管，用於接收從上 述多孔體的孔飛散出的鍍液，用以排出儲留於上述容器中 的鍍液之排出管，從上述開口部***之接觸鍍液用的電極 ;在鍍敷中’係反覆地進行旋轉、停止或減速。 特開平9-239799號公報中揭示出一種導電性微粒子 之製造方法’所使用之鍍敷裝置係具有：於外周部的至少 一部分形成過濾部、於外周部具有接觸環（陰極）之可旋轉 的鍍敷裝置本體’位於該本體中且設置成不與該陰極接觸 之陽極’將該本體以其旋轉軸爲中心旋轉下，一面在該本 體內補充鍍液一面於置入該本體內的微粒子表面形成鍍層 本紙張尺度適用中國國家標準（CNS)以規柏{21〇Χ29ϋ了 ---------裝------、訂------Μ (請先閱讀背面之注念事項再J/,寫本頁) 經濟部中央標隼局負工消费合作社印製 459072 Λ7 B7 _ ___ 五、發明説明（> ) 這些導電性微粒子的製造裝置中，被鍍物會因離心力 的作用而壓接於接觸環，藉由反覆地旋轉、停止或減速而 均一地混合以提高通電性，增加電流密度，又因鍍液的更 新很快，故於鍍液中微粒子不致凝集，而可得出具均一厚 的鍍層之導電性微粒子。 然而，這些導電性微粒子的製造裝置中，會產生以下 的問題。 多孔體的孔徑及處理室的旋轉數(周速），係配合被鍍 物之微粒子的粒徑以適當地選擇β要對粒徑以下 的微粒子進行鍍敷時，爲了使粒子接近接觸環必須提高處 理室的周速。例如，60~l〇〇ym的微粒子的情形，必須爲 多孔體的孔徑2〇Mtn、周速300m/分以上。若在此周速下 微粒子將不易靠近陰極(接觸環）側，而確認出有無法鍍敷 的現象。 然而，若提高處理室的周速’基於旋轉的離心力作用 之受到向外周方向的力之鍍液’在處理室內會形成硏缽狀 的旋渦’而沿著中空罩的內壁向上昇，而使鍍液従中空罩 的開口部飛散出β伴隨著此鍍液的飛散，會産生微粒子從 處理室內向外部流出（溢流）之問題。又，若將處理室內的 液量減少成不致形成溢流時，由於電極和鍍液接觸的面積 減少，會變成低電流密度，又因旋渦的形成會使電極露出 ，而使其無法接觸鍍液，會產生電流無法流通之問題β 基於道些問題，對於100//m以下的微粒子之鍍敷事 (2 ：〇 χ ~)~ --- ^界 訂μ, \J/ (婧先閱请背*之注念带項存幼耗本頁) 經濟部中央榡準局员T;消f合作社印¾ 經濟部中央標嗥局員工消费合作社印製 4 D ^ Ο 7 2 Α7 __ΙΠ 五、發明説明（f) 實上並不可能。 又’多孔體的孔徑是採用鍍液可通過微粒子無法通過 的孔徑，須配合微粒子的粒徑而使用數種孔徑的多孔體。 - 然而，這些多孔體，因爲是塑膠或陶瓷所形成的具連 通氣泡的過濾器狀多孔體，故多孔體內的孔徑的分布相當 不均。因此，孔徑相等或大於微粒子的孔徑之部分，會產 生堵塞或因粒子的通過而造成粒子損失《又，若使用20从 m以下的多孔體，鍍液通過多孔體內時的阻抗將變大，多 孔體中之鍍液的通過量會明顯地降低。若於這種狀態下產 生堵塞，處理室內的鍍液會變得幾乎無法循環更新，會導 致處理室內的液溫上昇 '鍍液組成的變動、對鍍層品質造 成不良影響等問題。 .又，即使使用習知之這些導電性微粒子製造裝置，要 對粒徑約100#m以下的微粒子進行電鍍時，隨著電鍍進 行會產生凝集，對於一個一個微粒子要高效率地加以鍍敷 有其界限存在◊ 然而，習知的導電性微粒子製造方法中，微粒子係藉 由因處理室的旋轉之離心力作用而在壓接於接觸環（陰極) 的狀態下被通電以進行鍍敷。通電停止之同時旋轉也停止 ，微粒子會因重力與鍍液的慣性而被拉入液流中，流落至 底板中央部的平坦面，混合之。接著若處理室再旋轉，於 混合下以其他姿勢壓接於接觸環而進行鍍敷。藉由重覆如 此般的旋轉、停止的循環，以使存在於處理室中的所有微 粒子上形成均一厚度的鍍層。 -—. _________ Ί____ 本紙張尺度適用中國國家棉挲（CNS ) Λ4觇梢（21〇_Χ2<η公筇） ---------^------1Τ------.腺 \/ (請先閲讀背面之注念事項再分巧本頁) 經濟部中央標準局貝工消赀合作社印製 459072 五、發明説明（，Γ) 然而，這種習知的導電性微粒子製造方法中，會產生 下述的問題。 習知的導電性微粒子製造方法中，從處理室的旋轉開 始到開始通電時要隔一段時間，其間讓微粒子朝接觸環(陰 極）移動（以下，這段時間稱作粒子移動時間」）β接著， 於處理室等速旋轉狀態下開始通電，將電流流經和接觸環 接觸之微粒子塊，以析出鍍敷被膜(以下，這段時間稱作「 通電時間」）°接著，停止通電並將處理室的旋轉速度經一 段時間減速(以下，這段時間稱作「減速時間」）β以該循 環作爲1個循環，重覆地進行處理。 此處，爲了提高鍍敷的效率，可設定長通電時間，或 提高通電時的電流密度。 .然而，由於微粒子是以凝集微粒子塊的狀態接觸於接 觸環（陰極），若在此狀態下長時間通電以令鍍敷膜析出， 由於有些微粒子會維持於凝集狀態下被鍍敷，會有凝集塊 產生的問題。亦即，爲了防止這種凝集塊的發生，通電時 間無法設定成太長。 又，若提高電流密度，1個循環中的通電時間內鍍敷 被膜析出量會過多，放有凝集塊產生的問題。此乃基於，1 循環中若鍍敷被膜析出量過多，由於會析出如被覆微粒子 所凝集成的微粒子塊的表面般之厚鍍敷被膜，僅藉由處理 室停止時的攪拌力並無法破壞被覆於微粒子塊的表面之鍍 敷被膜’而於下次通電時，將會在其表面再析出鍍敷被膜 〇 ___——— ______8__________________ 本紙張尺度適用中國國家楷隼（CNS ) Λ4规柏（210X297公坫*ΐ ' — ---------赛-------.-IT------Μ (請先閱讀背面之注意事項存却其本莧) 經濟部中央標隼局员工消f合作社印裝 459072 五、發明説明（L ) 又，習知的導電性微粒子製造方法，係具有以下的問 題。 要對比重小的微粒子進行鍍敷時，由於和鍍液的比重 差不多，朝接觸環的靠近會變慢，若於完全靠近接觸環前 就通電，會因雙極現象而造成導電基底層的溶解。所謂雙 極現象，在被鍍物與陰極的接觸力弱時、或被鍍物和陰極 接觸前通電時，被鍍物本身會分極，而有從帶正電部分產 生皮膜的溶解之現象。 特別是，於有機樹脂微粒子或無機微粒子般的無導電 性的微粒子表面，藉由無電場鍍敷法以形成埃程度的導電 基底層，藉由以賦予導電性之微粒子中，若產生雙極現象 ，因導電基底層的溶解會使微粒子表面的導電性消失，而 無法電鍍。 又，若通電時間過短，由於在所有的微粒子靠近接觸 環前就開始通電，將產生雙極現象，而無法電鍍。相反地 ，若通電時間過長，由於1循環內的通電時間比例過小， 會導致效率變差。 然而，各向異性導電接著劑，在液晶顯示器、個人電 腦、大哥大等電子製品的領域，係廣泛地用於將半導體元 件等小型元件電連接於基板上，或基板與基板之電連接。 作爲這種各向異性導電接著劑，大多是使用將導電性 微粒子混入結合劑樹脂中所構成者。作爲這種導電性微粒 子，大多是使用對有機基材粒子或無機基材粒子的外表面 施加金屬鑛敷所構成者。作爲這種導電性微粒子，例如於 __ ___9_____ ___________ 、張尺度適用中國國家標準（CNS )以规梏（U0X297公处） 抑衣 I 一一 It— 訂 I . (請先閲讀背面之注;δ事項再^界本頁) Λ7 459072 五、發明説明（7 ) (讀先閱讀背面之注意事項#功.3!'?4^ 特公平6-90771號公報、特開平4_36902號公報、特開平 4-269720號公報、特開平3-257710號公報等中已揭示出各 種技術 又1作爲將這種導電性微粒子和結合劑樹脂混合所構 成之膜狀或膠狀的各向異性導電接著劑，例如於特開昭63-231889號公報、特開平4-259766號公報、特開平2-291807號公報、特開平5-75250號公報中已掲示出各種技 術。 這些技術中之各向異性導電接著劑，大多是採用於電 絕緣材料上藉無電解鍍敷以設置導電層之導電性微粒子。 然而，藉無電解鍍敷所設之導電層，由於通常並無法形成 太厚，會有連接時電流容量少的缺點。 經濟部中央標準局員工消赀合作社印裝 .基於此，爲了提高導電性的可靠性而增大連接時的電 流容量，係採用貴金屬鍍敷，由於在絕緣材料上直接鍍敷 貴金屬會有困難，故要先將鎳等卑金屬藉無電解鍍敷鍍敷 後苒進行貴金屬之替代鍍敷。此時的替代反應中，卑金屬 層的表面無法完全地替代，會殘留部分的卑金屬，該部分 會慢慢劣化而有無法得出充分的可靠性之虞。 特別是，最近隨著電子機器及電子裝置的小型化，基 板等的配線變得更微細，連接部的可靠性之提高乃成爲當 務之急。又，適用於最近開發出之電漿顯示器的元件，由 於爲大電流驅動型，故要求可對應於大電流之各向異性導 電接著劑。爲了解決電流容量的問題，雖有提高導電性微 粒子的濃度之方法，但若提高濃度則有電極間易發生漏電 .張尺度適用中國國家標隼（CNS ) Λ4現格（210X29l5^ 經濟部中央標準局負工消φ：合作社印製 A7 五、發明説明（f ) 流的問題β 然而，半導體元件、水晶振盪器、光電變換元件等電 子電路元件’連接於電子電路基板後係構成電子電路裝置 ，而於電子領域中以各種形態使用著β有關這種電子電路 元件之對電子電路基板的連接’已有各種技術提出。 特開平9_293753號公報中，對於電子電路元件和電 子電路基板’在各電極部未施加特殊加工下爲提高接合性 ，已揭示出有使用導電球的技術。然而，此技術中，有以 下所述的各種問題點而無法綜合地加以解決β 特開平9413741號公報揭示出，半導體晶片和有機 印刷電路基扳係以電銲連接，再將接合面全部等以絕緣性 有機封止材料被覆而構成半導體裝置。然而，這種技術不 僅需要煩雜的作業，接合部上會有各種問題而無法綜合@ 加以解決。 要將電子電路元件連接於電子電路基板以製造電 路裝置時，起因於該部分的接合性會產生各種問題’ 解決這些問題已有許多技術被提出。 這些技術應用於將作爲半導體元件之1C裸晶片胃 於電子電路基板的情形的例子，加以整理後記載如下° (1)線接合法 藉由金或銅的細線，將1C晶片的周邊電極和電 路基扳藉加熱、加壓予以連接之方法。該線接合法’ 即使不對1C晶片的鋁電極施加任何加工也可以達成線^胃 之好處，相反地，會有連接間距無法太小、連接部分 ___— _____丨丨 —14---------—*— """"""" 本紙ί長尺度適用中國國家#準（CNS ) W現格（2丨0X2^»^ ) (請先閱馈背面之注意事項再#¾本頁) -丁 _ 、言 -雜. 45 9 0了2 . A7 H7 __——— ^ - --------——---- _ 五、發明说明（1) 稹大等問題。 (2) 使用銲錫凸塊之反扣晶片接合法（例’特開平9-246319 號公報） 將在1C裸晶片的電極部上形成婷錫凸塊者重疊於電 子電路基板電極部，藉加熱以融解銲錫而連接之方法（圖 36)。靜錫凸塊之形成’係在1C晶片的錦亀極上形成多層 金屬障襞層後’進行銲錫電鍍並加熱’或將銲錫球載置於 電極部後’藉加熱等以進行之" 使用銲錫凸塊之反扣晶片接合法，因銲錫的自我對準 效果有易進行電極彼此的定位之好處。然而，相反地，於 1C晶片的錦電極上必須形成多層金屬障壁層，因銲錫凸塊 部的融解無法使間距保持—定’靜錫凸塊部會受到因1C裸 晶片與電子電路基板的熱膨脹係數差所產生的「剪切變形 」，而於銲錫凸塊部與基板電極部的連接部分產生裂開， 而有連接可靠性降低的危險。 (3) 使用具高剛性芯的銲錫被覆球之反扣晶片接合法(例，特 開平9-293753號公報，特開平9-293754號公報，特開平 5-243332號公報，特開平7-212017號公報）。 例如’將銅芯上被覆有銲錫之球載置於1C晶片的電 極部後’藉由加熱以將該銲錫被覆球固定於1C晶片的電極 部’之後，將固定好的銲錫被覆球重疊於電子電路基板的 電極部後’藉由再度加熱以進行連接(圖47)。即使在此方 法中’和(2)相同地，會承受因ic裸晶片與電子電路基板 的熱膨脹係數差所產生的「剪切變形」，而於銲錫凸塊部 - —~~ 丨 I 1 - __________ 、珉乂度適用中國國家榡準（CNS ) Λ4規梠（210χ297^Π " ---------------、玎------Μ ii/ {#先閱讀背面之注意事項再功一；?本頁) 經濟部中央標隼局貝工消费合作社印製 ^.^9 0 72 Λ7 B7 五、發明説明（/σ ) 與基板電極部的連接部分產生裂開，而有連接可靠性降低 的危險。 (4) 使用複製凸塊方式之反扣晶片接合法 藉由第1段熱壓接以將形成於凸塊形成用基板上的金 凸塊複製、載置於施加鍍錫或鍍金處理之膜承載物的引腳 部，接著將1C晶片重疊後再進行第二段的熱壓接(圖48)。 此方法中，有在1C晶片的鋁電極上不用形成金屬障壁層的 好處。然而，相辰地，特別是第2段熱壓接時，必須將特 別高的壓力施加於1C晶片，而有影響1C晶片的性能之危 險等問題。 (5) 使用導電性樹脂構成的凸塊之反扣晶片接合法 將銀粉與環氧接著劑構成的導電性樹脂藉網版印刷法 以於1C裸晶片的電極部上形成於1〇 μ m厚的凸塊形狀，令 其加熱硬化’將其重疊於電子電路基板的電極部後，透過 別的導電接著劑以進行接合(圖49)。於接合時，不須使用 高價的材料而經由簡單的步驟即可完成是其好處。然而， 相反地，於1C晶片的鋁電極上，必須附加鎳/钯等特別的 電極’因凸塊部易變彤’而有接合可靠性降低之危險等問 題β (6) 使用各向異性導電接著劑之反扣晶片接合法 於約5ym的金屬微粒子或樹脂芯微粒子的周圔，將 施加金屬鍍敷之導電性微粒子和熱可塑性或熱硬性接著性 混合’以製作出液狀或膜狀的各向異性導電接著劑，使用 該各向異性導電接著劑，將形成於1C晶片的銘電極之金凸 _____ Μ長尺度適用中國國家標毕（CNS )八4况枯（210x 297公幼"5 -- ----------餐------ΐτ------線 (锖先閱讀背面之注意事項再^¾本I ) 經濟部中央標準局負4消费合作社印裝 經濟部中央標率局員工消f合作社印製 4 D d U 7 2 A7 B7 五、發明説明Up 塊部和電子電路基板的電極部藉熱壓接而接合之（圖5〇” 接合時’由於不須使用前述（1)~(5)中必要的1C晶片和電子 電路基板的間隙充塡用之補強用的封止樹脂，而具有好處 a然而’相反地，由於須設置金凸塊，又1C晶片與電子電 路基板的電極部之間隔以外的間隙部分也會有導電性微粒 子的進入’因此，鄰接的電極間之絕綠電阻値會降低，而 有引起電極間的短路之危險等問題。 爲了解決以上之（1)〜(6)之習知技術中之問題點，必須 採用以下的方法β (υ線接合法、（2)使用銲錫凸塊之反扣晶片接合法中，會 有100/zm以下的晶片之高密度組裝上之困難，爲了解決 此問題，可將高密度配線之1C晶片和電子電路基板接合。 (2)使用銲鍚凸塊之反扣晶片接合法' (3)使用具高剛性芯 的銲錫被覆球之反扣晶片接合法中，因1C晶片和電子電路 基板之熱膨脹係數差會產生剪切變形，而於銲錫凸塊或銲 錫被覆球與基板電極部的連接部分會產生裂開，而有連接 可靠性降低的危險：又(5)使用導電性樹脂構成的凸塊之反 扣晶片接合法中，會有凸塊部易塑性變形而降低接合可靠 性之問題，爲了解決這些問題，必須提高1C晶片，電子電 路基板所構成的電子電路裝置之連接可靠性。 (句使用複製凸塊方式之反扣晶片接合法中，特别是第2 段的熱壓接中，必須對晶片施加特別高的壓力，而有影響 IC晶片的性能之問題，爲了解決此問題’ 1C晶片和電子電 路基板的接合步驟中之高壓力要去除。 ---------#------ΐτ-----—Μ • ϋ/ (請先閱讀背面之注意亊項再^¾本頁) 本紙張尺度適用中國國家標準（CNS ) Λ4规梢（2丨ΟΧ297公於） 459072 A7 B7 五、發明説明（/f) (6)使用各向異性導電接著劑之反扣晶片接合法中，由於 導電性微粒子之存在於電極部以外的間隙部分，而有鄰接 的電極間之絕緣電阻値降低的問題，爲了解決此問題，必 須防止1C晶片、電子電路基板的鄰接電極間之絕緣電阻値 的降低β 爲了解決習知技術的問題點，必須提出一個可將上述 問題完全解決的方法β [發明之摘述] 本發明係有鑑於上述要求，目的是提供一種導電性微 粒子的製造裝置，以高效率地進行鍍敷處理，即使在100 以下的微粒子上亦可形成均一的鍍層 又本發明的目的是提供一種導電性微粒子的製造裝置 ，可防止導電性微粒子的凝集，而於一粒一粒的導電性微 粒子表面形成均一的電鍍層。 又本發明之目的是提供一種導電性微粒子之製造方法 ，於鍍液中微粒子不會凝集，效率佳，在所有的微粒子上 皆可形成均一厚的鍍層。 又本發明的目的是提供一種導電性微粒子，其係用以 提供連接電阻低、連接時的電流容量大、連接可靠性高、 不產生漏電流現象之各向異性導電接著劑及電連接構造體 〇 又本發明是提供一種可將因各種原因造成的電子電路 元件與電子電路基板間之連接不良等綜合地解決之電子電 路裝置，並提供該電子電路裝置用之電子電路元件、電子 ---------g------ΐτ------k i (讀先閱讀背面之注意事項再本頁) 經濟部中央橾準局员工消费合作社印製 本紙張尺度適用中國國家標準（€1^)/\4规枋{210‘;<297公祜） 459072 經濟部中央標芈局工消费合作社印製 ΑΊ B7 五、發明説明（/3) 電路基板及導電性微粒子，並提供該電子電路裝置之製造 方法。 本發明1之導電性微粒子的製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的外周上面之僅鍍液可通過之多孔體； 配置於上述多孔體上面之通電用的接觸環； 中空罩，於上部中央具有開口部之圓錐台狀的罩之上端部 接合孔徑相同於開口徑之中空圓筒，該中空圓筒的上端部 係朝中空圓筒內壁側回折； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室； 將鍍液從上述開口部供給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 本發明2之導電性微粒子製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的外周上面之多孔體，係於多孔質保持體 的內側面具有僅鍍液可通過的孔徑，並貼合有厚10〜1000 之板狀過濾器； 配置於上述多孔體上面之通電用的接觸環； 於上部中央具有開口部之圓錐台狀的中空罩； 形成於上碰中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室； __________-AL·_____ 本紙張尺度適用中國國家榡舉（CNS ) 规格（210 X 297公於） (請先閱讀背面之注項再咏寫本頁) -裝-* 1T Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The paper size is applicable to China National Standards (CNS) Λ4 Regulations (210X297 Public Office) Λ7 459072 5. Description of the invention (\) Rotary immersed in plating The polygonal cylindrical cylinder is built with the object to be plated, and the cathode disposed in the cylinder is contacted with the object to be plated when the cylinder is rotated. However, if the method is performed by using the aforementioned cylinder plating device, For the plating of particles with a particle size of 5000ym or less, the particles in the plating solution are deposited in an agglomerated state, which will cause the problem that single particles cannot be obtained, and because the particles cannot be uniformly plated, the coating thickness will be uneven. Based on this, as the means for solving the aforementioned problems, for example, the following devices have been proposed. Japanese Laid-Open Patent Publication No. 7-118896 discloses a manufacturing apparatus for conductive fine particles having a circle fixed to the upper end portion of a vertical drive shaft. A disc-shaped bottom plate is provided with a contact ring for electrification on the above-mentioned porous body, and a porous body arranged near the above-mentioned contact ring, through which only mineral liquid can pass, is provided in the upper center. A truncated cone-shaped hollow cover at the mouth is formed in a processing chamber sandwiching the contact ring between an outer peripheral portion of the hollow cover and the bottom plate, and supplies a plating solution from the opening to a supply pipe of the processing chamber. A discharge pipe for receiving the plating solution scattered from the holes of the porous body, used to discharge the plating solution stored in the container, and an electrode for contacting the plating solution inserted through the opening; Rotating, stopping, or decelerating. Japanese Patent Application Laid-Open No. 9-239799 discloses a method for producing conductive fine particles. The plating apparatus used includes a filter portion formed on at least a portion of the outer peripheral portion and a contact ring on the outer peripheral portion. (Cathode) a rotatable plating device body 'an anode located in the body and arranged not to contact the cathode' rotates the body around its rotation axis while replenishing the plating solution in the body The surface of the microparticles formed into the body forms a coating. The paper size is in accordance with the Chinese National Standard (CNS) to regulate the cypress {21〇 × 29ϋ ------------ install --------, order ----- -Μ (Please read the back first (Notes on J /, write this page) Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives 459072 Λ7 B7 _ ___ 5. Description of the Invention (>) In these conductive fine particle manufacturing equipment, the objects to be plated It is crimped to the contact ring due to the centrifugal force. It is uniformly mixed by repeatedly rotating, stopping or decelerating to improve the electrical conductivity, increase the current density, and because the plating solution is updated quickly, the particles in the plating solution will not agglomerate. However, conductive fine particles having a uniformly thick plating layer can be obtained. However, in the manufacturing apparatus of these conductive fine particles, the following problems occur. The pore diameter of the porous body and the number of rotations (circumferential speed) of the processing chamber are matched to be plated. The particle diameter of the fine particles of the object is appropriately selected. When plating the fine particles having a particle diameter of less than the particle diameter, it is necessary to increase the peripheral speed of the processing chamber in order to bring the particles closer to the contact ring. For example, in the case of fine particles of 60 to 100 μm, the porous body must have a pore diameter of 20 Mtn and a peripheral speed of 300 m / min or more. At this peripheral speed, it is difficult for the fine particles to approach the cathode (contact ring) side, and it is confirmed that the particles cannot be plated. However, if the peripheral speed of the processing chamber is increased, "the plating solution subjected to the force in the outer circumferential direction based on the rotating centrifugal force" will form a bowl-like vortex in the processing chamber, and rise along the inner wall of the hollow cover, so that The plating solution 従 is scattered from the opening of the hollow cover. With the scattering of the plating solution, there is a problem that fine particles flow out from the processing chamber to the outside (overflow). In addition, if the amount of liquid in the processing chamber is reduced so that no overflow occurs, the contact area between the electrode and the plating solution will decrease, which will result in a low current density, and the formation of vortices will expose the electrode, making it impossible to contact the plating solution. Will cause the problem that current cannot flow. Based on these problems, the plating of fine particles below 100 // m (2: 〇χ ~) ~ --- ^ 界定 μ, \ J / (Jing first read please (Notes on the memorandum are stored on this page.) Printed by member of the Central Bureau of Standards of the Ministry of Economic Affairs; printed by the cooperative; ¾ Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs; (F) Impossible in practice. In addition, the pore size of the porous body is a pore size in which the plating solution can pass through fine particles, and it is necessary to use a porous body having several kinds of pore sizes in accordance with the particle size of the fine particles. -However, since these porous bodies are filter-like porous bodies with continuous air bubbles formed by plastic or ceramics, the pore size distribution in the porous bodies is quite uneven. Therefore, the part with a pore diameter equal to or larger than the pore diameter may cause blockage or particle loss due to the passage of the particles. Also, if a porous body of 20 m or less is used, the resistance of the plating solution when passing through the porous body will increase and become porous. The throughput of the plating solution in the body will be significantly reduced. If clogging occurs in this state, the plating solution in the processing chamber will hardly be renewed cyclically, which will cause the liquid temperature in the processing chamber to increase, 'changes in the composition of the plating solution, and adversely affect the quality of the coating. In addition, even if these conductive fine particle manufacturing devices are used, when plating is performed on particles having a particle diameter of about 100 # m or less, aggregation will occur as the plating progresses, and the fine particles must be efficiently plated. Boundaries exist. However, in the conventional method for producing conductive fine particles, the fine particles are electroplated in a state of being crimped to a contact ring (cathode) by a centrifugal force caused by the rotation of a processing chamber, and plating is performed. At the same time when the power is stopped, the rotation is also stopped. The fine particles will be drawn into the liquid flow due to gravity and the inertia of the plating solution, and will flow down to the flat surface in the center of the bottom plate and mix them. Then, if the processing chamber is rotated again, it is crimped to the contact ring in another posture under mixing to perform plating. By repeating such a rotation and stopping cycle, a uniform thickness plating layer is formed on all the micro particles existing in the processing chamber. -—. _________ Ί ____ This paper size is applicable to China National Cotton Jacket (CNS) Λ4 觇 tips (21〇_χ2 < η 公 筇) --------- ^ ------ 1Τ ---- -. Gland \ / (please read the notes on the back first, and then delineate this page) Printed by Beige Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 459072 5. Description of the Invention (, Γ) However, this conventional conductive In the method for producing fine particles, the following problems occur. In the conventional method for manufacturing conductive particles, a period of time is required from the start of the rotation of the processing chamber to the start of energization, during which the particles are moved toward the contact ring (cathode) (hereinafter, this period of time is referred to as the particle moving time) β followed by Start to energize while the processing chamber is rotating at a constant speed, and pass a current through the fine particle blocks in contact with the contact ring to precipitate a plating film (hereinafter, this period of time is referred to as "on time"). Then, stop energizing and process The rotation speed of the chamber is decelerated over a period of time (hereinafter, this period of time is referred to as "deceleration time") β, and this cycle is repeatedly processed as one cycle. Here, in order to improve the efficiency of plating, a long conduction time can be set or the current density at the time of conduction can be increased. However, since the fine particles are in contact with the contact ring (cathode) in the state of agglomerated fine particles, if the current is applied for a long time to cause the plating film to precipitate, some of the fine particles will be plated in the agglomerated state, and there will be Problems caused by agglomerates. That is, in order to prevent the occurrence of such agglomerates, the energization time cannot be set too long. In addition, if the current density is increased, the amount of the plating film deposited during the energization time in one cycle will be too large, causing a problem of agglomerates. This is based on the fact that if the deposition amount of the plating film is excessive in one cycle, a thick plating film such as the surface of the fine particle block aggregated by the coated fine particles is deposited, and the coating cannot be destroyed only by the stirring force when the processing chamber is stopped. The coating film on the surface of the microparticle block will be deposited on the surface next time it is energized. ______—— ______8__________________ This paper standard is applicable to the Chinese National Standards (CNS) Λ4 Regulation Bai (210X297坫 * 坫 '— --------- 赛 -------.- IT ------ M (Please read the precautions on the back but keep the original copy) Central Ministry of Economic Affairs Standards Bureau staff consumer cooperative printing 459072 5. Invention Description (L) In addition, the conventional manufacturing method of conductive fine particles has the following problems. When plating with small particles is compared with the plating solution, The specific gravity is similar, and the approach to the contact ring will become slower. If the current is applied before fully approaching the contact ring, the conductive base layer will be dissolved due to the bipolar phenomenon. The so-called bipolar phenomenon has weak contact force between the plated object and the cathode. At the time of contact In this case, the object to be plated is polarized, and the film is dissolved from the positively charged portion. In particular, on the surface of non-conductive particles such as organic resin particles or inorganic particles, the electric field plating method is used to A conductive base layer having an angstrom level is formed, and if the bipolar phenomenon occurs in the microparticles that impart conductivity, the dissolution of the conductive base layer will cause the conductivity of the surface of the microparticles to disappear, and the plating cannot be performed. Since all the particles start to be energized before approaching the contact ring, a bipolar phenomenon will occur, and electroplating cannot be performed. On the contrary, if the energization time is too long, the efficiency will be deteriorated because the proportion of energization time in one cycle is too small. However, Anisotropic conductive adhesives are widely used in the field of electronic products such as liquid crystal displays, personal computers, and big brothers to electrically connect small components such as semiconductor elements to substrates, or to electrically connect substrates to substrates. This kind of anisotropic conductive adhesive is generally formed by mixing conductive fine particles into a binder resin. Most of these conductive fine particles are formed by applying a metal deposit to the outer surface of an organic substrate particle or an inorganic substrate particle. As such conductive particles, for example, __ ___9_____ ___________ and Zhang scale are applicable to Chinese national standards ( CNS) Regulations (U0X297) I. I—It—Order I. (Please read the note on the back; δ matters and then ^ the page) Λ7 459072 V. Description of the invention (7) (Read the back first Notes # 功 .3! '? 4 ^ Various technologies have been disclosed in Japanese Patent Publication No. 6-90771, Japanese Patent Publication No. 4_36902, Japanese Patent Publication No. 4-269720, Japanese Patent Publication No. 3-257710, etc. As a film-like or gel-like anisotropic conductive adhesive made by mixing such conductive fine particles and a binder resin, for example, Japanese Patent Application Laid-Open No. 63-231889, Japanese Patent Application Laid-Open No. 4-259766, and Japanese Patent Application Laid-Open No. 2 Various technologies have been disclosed in Japanese Unexamined Patent Publication No. -291807 and Japanese Unexamined Patent Publication No. 5-75250. The anisotropic conductive adhesives in these technologies are mostly conductive fine particles which are provided with a conductive layer by electroless plating on an electrically insulating material. However, since the conductive layer provided by electroless plating is usually not formed too thick, there is a disadvantage that the current capacity at the time of connection is small. Based on this, employees of the Central Standards Bureau of the Ministry of Economic Affairs have printed on cooperatives. Based on this, in order to increase the reliability of electrical conductivity and increase the current capacity at the time of connection, noble metal plating is used. Since it is difficult to directly plate noble metals on insulating materials, Therefore, it is necessary to replace the noble metal with nickel and other base metals by electroless plating. In the substitution reaction at this time, the surface of the base metal layer cannot be completely replaced, and a part of the base metal may remain, and this part may be gradually deteriorated, so that sufficient reliability may not be obtained. In particular, recently, with the miniaturization of electronic devices and electronic devices, wiring of substrates and the like has become finer, and it has become an urgent task to improve the reliability of connection portions. In addition, an element suitable for a plasma display developed recently has a high current driving type, and therefore an anisotropic conductive adhesive capable of supporting a large current is required. In order to solve the problem of current capacity, although there is a method to increase the concentration of conductive fine particles, if the concentration is increased, leakage between electrodes is prone to occur. The Zhang scale is applicable to the Chinese National Standard (CNS) Λ4 grid (210X29l5 ^ Central Standard of the Ministry of Economic Affairs) Loss of work φ: Cooperative printed A7 5. Invention description (f) Flow problem β However, electronic circuit components such as semiconductor elements, crystal oscillators, and photoelectric conversion elements are connected to electronic circuit substrates to form electronic circuit devices. In the field of electronics, β has been proposed in various forms regarding the connection of such electronic circuit elements to electronic circuit substrates. Various techniques have been proposed. In Japanese Patent Application Laid-Open No. 9_293753, electronic circuit elements and electronic circuit substrates are provided at various electrodes. In order to improve the bonding without applying special processing, a technique using a conductive ball has been disclosed. However, this technique has various problems described below and cannot be comprehensively solved. The semiconductor wafer and the organic printed circuit board are connected by electric welding, and the joint surfaces are all insulated. Organic sealing materials are used to form semiconductor devices. However, this technology not only requires cumbersome work, but also has various problems on the joints that cannot be comprehensively solved. When connecting electronic circuit components to electronic circuit substrates to manufacture circuit devices There are various problems caused by the jointability of this part. Many technologies have been proposed to solve these problems. Examples of these technologies applied to the electronic circuit board as a 1C bare chip of a semiconductor device are summarized as follows ° (1) Wire bonding method A method in which the peripheral electrodes of the 1C chip and the circuit substrate are connected by heating and pressing with thin wires of gold or copper. This wire bonding method is used even if the aluminum electrode of the 1C chip is not subjected to any processing. The benefits of the line ^ stomach can also be achieved. On the contrary, there will be a connection pitch that cannot be too small, and the connection part ___— _____ 丨 丨 —14 ---------— * — " " " " " " " This paper is a long-scale application for the Chinese country # 准 （CNS） W 不 格 （2 丨 0X2 ^ »^) (please read the notes on the back of the feed first, then # ¾ this page)-丁 _ ， 言-miscellaneous. 45 9 0 2 2. A7 H7 __———— ^---------——---- _ V. Description of the invention (1) Large problems, etc. (2) Use of solder bumps instead Wafer bonding method (eg, Japanese Patent Application Laid-Open No. 9-246319) A method in which ting tin bumps formed on the electrode portion of a 1C bare wafer are superimposed on the electrode portion of an electronic circuit board and connected by heating to melt the solder (Figure 36) ). The formation of static solder bumps is 'formed by solder plating and heating' after forming a multilayer metal barrier layer on the brocade electrode of the 1C wafer, or by placing solder balls on the electrode section, 'by heating, etc.' The reverse wafer bonding method using solder bumps has the advantage of easy positioning of the electrodes due to the self-alignment effect of the solder. However, on the contrary, it is necessary to form a multilayer metal barrier layer on the brocade electrode of the 1C wafer. The melting of the solder bumps cannot maintain the pitch. The static solder bumps are subject to thermal expansion caused by the 1C bare wafer and the electronic circuit substrate. The "shear deformation" caused by the coefficient difference may cause cracks at the connection portion between the solder bump portion and the substrate electrode portion, and there is a risk that connection reliability may be reduced. (3) Reverse wafer bonding method using a solder-coated ball with a high rigid core (e.g., JP-A No. 9-293753, JP-A No. 9-293754, JP-A No. 5-243332, JP-A No. 7-212017 Bulletin). For example, 'the solder-coated ball on the copper core is placed on the electrode part of the 1C chip', and the solder-coated ball is fixed to the electrode part of the 1C chip by heating, and then the fixed solder-coated ball is superimposed on the electron The electrode portions of the circuit board are connected again by heating again (Fig. 47). Even in this method, the same as (2), it will withstand the "shear deformation" caused by the difference in thermal expansion coefficient between the IC bare chip and the electronic circuit substrate, and the solder bump--~~ 丨 I 1- __________, the degree is subject to China National Standards (CNS) Λ4 Regulations (210χ297 ^ Π " ---------------, 玎 ------ Μ ii / {# Read the precautions on the back first, and then make one more effort; this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Shellfish Consumer Cooperative ^. ^ 9 0 72 Λ7 B7 V. Description of the invention (/ σ) The connection part with the substrate electrode It is cracked and there is a danger that the reliability of the connection will be reduced. (4) Using the reverse bump bonding method using the copy bump method, the gold bump formed on the bump formation substrate is copied and placed on the film bearing tin-plated or gold-plated by thermal compression bonding in the first stage. Then, the 1C chip is overlapped, and then the second stage is thermocompression bonded (Fig. 48). In this method, there is an advantage that a metal barrier layer is not formed on the aluminum electrode of the 1C wafer. However, especially in the second stage of thermal compression bonding, a particularly high pressure must be applied to the 1C chip, and there is a risk of affecting the performance of the 1C chip. (5) Reverse wafer bonding method using bumps made of conductive resin. A conductive resin made of silver powder and epoxy adhesive was formed on the electrode part of a 1C bare wafer to a thickness of 10 μm by screen printing. The shape of the bumps is made by heating and hardening. After superimposing them on the electrode portion of the electronic circuit board, they are bonded through another conductive adhesive (Fig. 49). When joining, it is not necessary to use expensive materials and can be completed by simple steps. However, on the contrary, a special electrode such as nickel / palladium must be added to the aluminum electrode of the 1C wafer. “There is a risk that the reliability of the joint may be lowered because the bumps are easily deformed.” Β (6) Use of anisotropic conduction The reverse bonding method of the adhesive agent is applied to the periphery of the metal particles or resin core particles of about 5 μm, and the conductive particles applied with metal plating and the thermoplastic or thermosetting adhesive are mixed to produce a liquid or film. Anisotropic conductive adhesive, using this anisotropic conductive adhesive, the gold bumps of the Ming electrode formed on the 1C wafer _____ Μ long scale applicable to China National Standards Complete (CNS) 8 4 dry (210x 297 male "; 5----------- meal ------ ΐτ ------ line (锖 read the precautions on the back before ^ ¾ this I) Central Bureau of Standards of the Ministry of Economy minus 4 Consumption cooperatives printed by employees of the Central Standards Bureau of the Ministry of Economic Affairs, printed by the cooperatives 4 D d U 7 2 A7 B7 V. Description of the invention The Up block and the electrode part of the electronic circuit board are joined by thermocompression bonding (Figure 5〇 " At the time of bonding, since it is not necessary to use the gap between the 1C chip and the electronic circuit board necessary in (1) to (5) above. The sealing resin used for reinforcement has advantages a. However, 'conversely, since gold bumps must be provided, conductive particles can enter the gap portion other than the gap between the 1C chip and the electrode portion of the electronic circuit board. 'Therefore, the green resistance 邻接 between adjacent electrodes may be reduced, and there may be a risk of causing a short circuit between the electrodes. In order to solve the problems in the conventional techniques of (1) to (6) above, it is necessary to adopt the following In the method β (υ wire bonding method, (2) reverse buckle wafer bonding method using solder bumps, there will be difficulties in high density assembly of wafers below 100 / zm. In order to solve this problem, high density wiring can be used 1C wafer and electronic circuit board bonding. (2) Reverse wafer bonding method using solder bumps' (3) Reverse wafer bonding method using solder-coated balls with a high rigid core, because 1C chip and electronic circuit The difference in thermal expansion coefficient of the substrate will cause shear deformation, and the connection portion between the solder bump or the solder coating ball and the substrate electrode portion will be cracked, which may reduce the connection reliability: (5) using a conductive resin structure In the reverse buckle wafer bonding method of bumps, there is a problem that the bumps are easily plastically deformed and the bonding reliability is reduced. In order to solve these problems, it is necessary to improve the connection reliability of electronic circuit devices composed of 1C chips and electronic circuit substrates. (In the reverse-wafer wafer bonding method using the replication bump method, especially in the thermal compression bonding of the second stage, a particularly high pressure must be applied to the wafer, which has a problem affecting the performance of the IC wafer. In order to solve this problem 'The high pressure in the bonding step of the 1C wafer and the electronic circuit substrate must be removed. --------- # ------ ΐτ -----— M • ϋ / (Please read the Note the item again ^ ¾ This page) This paper size is applicable to the Chinese National Standard (CNS) Λ4 gauge (2 丨 〇297297) 459072 A7 B7 V. Description of the invention (/ f) (6) Use of anisotropic conductive adhesive In the reverse wafer bonding method, since the conductive fine particles exist in the gap portion other than the electrode portion, there is a problem that the insulation resistance 邻接 between adjacent electrodes decreases. In order to solve this problem, it is necessary to prevent the 1C chip and the electronic circuit substrate. Insulation between adjacent electrodes Reduction of resistance 値 In order to solve the problems of the conventional technology, it is necessary to propose a method which can completely solve the above-mentioned problems β [Abstract of the Invention] The present invention has been made in view of the above requirements, and aims to provide an apparatus for manufacturing conductive fine particles The plating process can be performed with high efficiency, and a uniform plating layer can be formed even on particles below 100. The object of the present invention is to provide a manufacturing device for conductive particles, which can prevent the aggregation of conductive particles, The surface of one conductive fine particle forms a uniform plating layer. Another object of the present invention is to provide a method for manufacturing conductive fine particles. The fine particles will not agglomerate in the plating solution, and the efficiency is high. A uniform thick plating layer can be formed on all the fine particles. Another object of the present invention is to provide conductive fine particles, which are used to provide an anisotropic conductive adhesive and electrical connection structure with low connection resistance, large current capacity during connection, high connection reliability, and no leakage current phenomenon. 〇The invention also provides an electronic circuit device that can comprehensively solve the poor connection between the electronic circuit element and the electronic circuit substrate caused by various reasons, and provides the electronic circuit element, electronic for the electronic circuit device --- ------ g ------ ΐτ ------ ki (Read the notes on the back first, then this page) Printed on the paper by the Consumers' Cooperative of the Central Procurement Bureau of the Ministry of Economic Affairs. Standard (€ 1 ^) / \ 4 Regulations {210 '; < 297 gongsong) 459072 Printed by the Industrial and Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs B7 V. Description of the invention (/ 3) Circuit board and conductive particles, A method for manufacturing the electronic circuit device is also provided. The manufacturing apparatus of the conductive fine particles of the present invention 1 includes: a disk-shaped base plate fixed to the upper end portion of the vertical drive shaft; a porous body arranged on the outer periphery of the base plate only through which the plating solution can pass; and arranged on the porous body Contact ring for energizing above; Hollow cover, the upper end of the truncated cone-shaped cover with an opening in the upper part is joined to a hollow cylinder with the same diameter as the opening diameter, and the upper end of the hollow cylinder faces into the hollow cylinder Wall-side turnback; a rotatable processing chamber sandwiching the porous body and contact ring formed between the outer peripheral portion of the hollow cover and the bottom plate; a supply pipe for supplying a plating solution from the opening to the processing chamber; A container for receiving the plating solution scattered from the holes of the porous body; a discharge tube for draining the plating solution stored in the container; and an electrode for contacting the plating solution inserted through the opening. The conductive fine particle manufacturing apparatus of the present invention 2 includes: a disc-shaped base plate fixed to the upper end portion of the vertical drive shaft; a porous body disposed on the outer periphery of the base plate; A plate-shaped filter with a thickness of 10 to 1000 is attached to the pores through which the liquid can pass; a contact ring for energization disposed on the porous body; a truncated cone-shaped hollow cover with an opening in the upper center; formed on the top A rotatable processing chamber that sandwiches the porous body and the contact ring between the outer periphery of the hollow cover and the aforementioned bottom plate; __________- AL · _____ This paper size applies to China National Examination (CNS) specifications (210 X 297) (Please read the note on the back before writing this page)-装-

11T 經濟部中央橾準局貝工消费合作社印狀 45 9072 Α7 Β7 五、發明説明（（γ) 將鍍液從上述開口部洪給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 本發明3之導電性微粒子製造裝置中，多孔體係在多 孔質保持體的內側面具有僅鍍液可通過的孔徑，並貼合有 厚10〜lOOOem之板狀過爐器，除此外和本發明1的導電 性微粒子製造裝置的構造相同β 本發明4之導電性微粒子製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底扳的上面之僅鍍液可通過的板狀多孔體； 配置於上述多孔體上面之通電用的接觸環； 於上部中央具有開口部之圓錐台狀的中空罩； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室； 將鏟液從上述開口部供給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 本發明5之導電性微粒子製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的上面之僅鍍液可通過之板狀多孔體； 配置於上述多孔體上面之通電用的接觸環； 中空罩，於上部中央具有開口部之圓錐台狀的罩之上端部 (請先閲讀背面之注意事項再填寫本頁) --ο- 本紙珉尺度適用中國國家棉準（CNS ) Λ4规枋（210Χ297公兑) 459072 A7 B7 五、發明説明（/f) 接合孔徑相同於開口徑之中空圓筒，該中空圓筒的上端部 係朝中空圓筒內壁側回折； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室： 將鍍液從上述開口部供給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 本發明6之導電性微粒子製造裝置中，多孔體係在板 狀多孔質保持體的上面具有僅鍍液可通過的孔徑，並貼合 有厚10〜lOOOem之板狀過濾器，除此外和本發明4或5 的導電性微粒子製造裝置的構造相同。 .本發明7係藉由鍍敷步驟以在微粒子的表面形成電鍍 層之導電性微粒子製造方法，爲了將上述鍍敷步驟中所生 成的微粒子凝集塊分散、粉碎、單粒子化，係包含用以賦 予擇自剪切力、衝擊力、及壓力降低所構成群中之至少i 種的步驟。 本發明8之之導電性微粒子製造方法，係於配設有陽 極與陰極之鍍浴中，藉由基於離心力之令微粒子撞擊陰極 的鏟敷步驟，以於上述微粒子表面形成電鍍層，其特徵在 於，爲了將上述鍍敷步驟中所生成的微粒子凝集塊分散、 粉碎、單粒子化，係包含用以賦予擇自剪切力、衝擊力、 及壓力降低所構成群中之至少i種的步驟。 本發明9之導電性微粒子製造方法，係使用具有： -IS--------—___ 本紙張尺度適用中國國家標皐（CNS ) Λ4规柢（2!ΟΧ2ίΠ'；·>^ ) (請先閱讀背面之注意事項再琪将本頁)11T Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives 45 9072 Α7 Β7 V. Description of the invention ((γ) Supplying the plating solution from the opening to the supply pipe of the processing chamber; A container for the plating solution scattered by holes; a discharge tube for discharging the plating solution stored in the container; an electrode for contacting the plating solution inserted through the opening. The conductive fine particle manufacturing apparatus of the third aspect of the present invention is porous The system has the same hole structure on the inner side of the porous holder as the plating solution, and is attached to a plate-shaped furnace with a thickness of 10 to 100 μm, except that it has the same structure as the conductive fine particle manufacturing apparatus of the present invention. The conductive fine particle manufacturing device of the invention 4 includes: a disc-shaped bottom plate fixed to the upper end portion of the vertical drive shaft; a plate-shaped porous body arranged on the upper surface of the bottom plate, and only a plating solution can pass through; A contact ring for energizing the upper surface; a truncated cone-shaped hollow cover having an opening at the center of the upper portion; the porous body formed between the outer peripheral portion of the hollow cover and the bottom plate and contacted A rotatable processing chamber; a supply pipe for supplying shovel liquid from the opening to the processing chamber; a container for receiving the plating solution scattered from the holes of the porous body; used to discharge and store in the container A plating solution discharge pipe; an electrode for contacting the plating solution inserted from the opening. The conductive fine particle manufacturing apparatus of the present invention 5 includes: a disc-shaped bottom plate fixed to the upper end portion of the vertical drive shaft; A plate-shaped porous body on the bottom plate of which only the plating solution can pass; a contact ring for energizing the above-mentioned porous body; a hollow cover, the upper end of a truncated cone-shaped cover with an opening in the upper center (please read first Note on the back, please fill in this page again) --ο- The paper size is applicable to China National Cotton Standard (CNS) Λ4 Regulations (210 × 297 KRW) 459072 A7 B7 5. Description of the invention (/ f) The joint diameter is the same as the opening diameter A hollow cylinder, the upper end of which is folded back toward the inner wall side of the hollow cylinder; formed at a rotatable position between the outer periphery of the hollow cover and the bottom plate to sandwich the porous body and the contact ring Chamber: a supply pipe for supplying the plating solution from the opening to the processing chamber; a container for receiving the plating solution scattered from the holes of the porous body; a discharge pipe for discharging the plating solution stored in the container The electrode for contacting the plating solution inserted from the above-mentioned opening. In the conductive fine particle manufacturing apparatus of the present invention 6, the porous system has a pore diameter through which the plating solution can pass only on the upper surface of the plate-shaped porous holder, and is adhered to a thick layer. The plate-shaped filter of 10 ~ 1000em is the same as the structure of the conductive fine particle manufacturing apparatus of the present invention 4 or 5 except that the present invention 7 is a manufacturing process of the conductive fine particles by forming a plating layer on the surface of the fine particles by a plating step. A method for dispersing, pulverizing, and singulating the agglomerates of fine particles generated in the above-mentioned plating step includes the steps of imparting at least i kinds of groups selected from shear force, impact force, and pressure reduction. . The manufacturing method of the conductive fine particles according to the eighth aspect of the present invention is to form a plating layer on the surface of the fine particles by a scooping step of causing the fine particles to impact the cathode based on a centrifugal force in a plating bath provided with an anode and a cathode. In order to disperse, pulverize, and singulate the agglomerates of fine particles generated in the above-mentioned plating step, the method includes the steps of imparting at least i kinds of groups selected from the group consisting of shear force, impact force, and pressure reduction. The method for manufacturing conductive fine particles of the present invention 9 is: -IS ------------___ This paper size is applicable to the Chinese National Standard (CNS) Λ4 Regulations (2! 〇Χ2ίΠ '; · > ^ ) (Please read the notes on the back before Qi will turn this page)

、1T 經濟部中央摞準局貝工消费合作社印製 45 9072 Α7 Β7 經濟部中央標準局員工消费合作社印製 玉、發明説明（[G ) 固定於垂直驅動軸的上端部之圓盤狀底板；配置於上述底 板的外周上面之僅鍍液可通過之多孔體；配置於上述多孔 體上面之通電用的接觸環；中空罩，於上部中央具有開口 部之圓錐台狀的罩之上端部接合孔徑相同於開口徑之中空 圓筒，該中空圓筒的上端部係朝中空圓筒內壁側回折；形 成於上述中空罩的外周部與前述底板間之夾住上述多孔體 和接觸環之可旋轉的處理室；將鍍液從上述開口部供給至 上述處理室之供給管；用於接收從上述多孔體的孔飛散出 的鍍液之容器；用以排出儲留於上述容器中的鍍液之排出 管；從上述開口部***之接觸鍍液用的電極： 之電鍍裝置； 係包含： 鍍敷步驟’將施加前處理後的微粒子置入上述處理室，一 面在上述處理室內供給鍍液，同時將上述處理室以其旋轉 軸爲中心而旋轉；以及 單粒子化步驟’爲了將上述鍍敷步驟中所生成的微粒子凝 集塊分散'粉碎、單粒子化，而賦予擇自剪切力、衝擊力 、及壓力降低所構成群中之至少1種。 本發明10係用以實施本發明7、8、9的導電性微粒 子製造方法之導電性微粒子製造裝置。 本發明11之導電性微粒子製造裝置，係具有：固定 於垂直驅動軸的上端部之圓盤狀底板；配置於上述底板的 外周上面之僅鍍液可通過之多孔體；配置於上述多孔體上 面之通電用的接觸環；於上部中央具有開口部之中空罩； --——__1Q _ 本紙掁尺度適用中國國家棉準（CNS ) Λ4^梏（210X29祕# ) (請先閲讀背面之注意事項再壤寫本頁) .裝· 訂 ,k 經濟部中央標準局貝工消费合作社印製 459072 A7 _ F37 玉、發明説明（/^) 形成於上述中空罩的外周部與底板間之夾住上述多孔體與 接觸環之可旋轉的鍍槽；於上述鍍槽內，藉由僅鍍液可通 過的隔板所隔出之包含上述接觸環的內側面之處理室；將 鍍液從上述開口部供給至上述鍍槽之供給管；用於接收從 上述多孔體的孔飛散出的鍍液之容器；用以排出儲留於上 述容器中的鍍液之排出管；從上述開口部***之接觸鍍液 用的電極。 本發明12之導電性微粒子製造方法，係藉由鍍敷步 驟以於微粒子的表面形成鍍層之導電性微粒子製造方法， 其特徵在於，上述鍍敷步驟之進行所使用之導電性微粒子 製造裝置，係具有：於側面具陰極並具有可使鍍液通過而 排出的過濾部之可旋轉的處理室，以及設置成不與上述處 理室中的陰極接觸之陽極；上述鍍敷步驟，係藉由反覆上 述處理室的旋轉與停止以進行之，係包含：在上述微粒子 接觸上述陰極的狀態下進行通電以於上述微粒子的表面形 成鍍層之通電步驟，以及將上述微粒子攪拌之攪拌步驟。 本發明13之導電性微粒子製造方法，係藉由鍍敷步 驟以於微粒子的表面形成鍍層之導電性微粒子製造方法， 其特徵在於，上述鍍敷步驟之進行所使用之導電性微粒子 製造裝置，係具有：於側面具陰極並具有可使鍍液通過而 排出的過濾部之可旋轉的處理室，以及設置成不與上述處 理室中的陰極接觸之陽極；基於上述處理室的旋轉之離心 力的效果以使微粒子接觸上述陰極，而在此狀態下進行通 1 >. — . I .<>·- * 1 ···· 電以於上述微粒子的表面形成鑛層.,，之後停止上述處理室 __—.--- " _2£L______________ 本紙张尺度適用中國國家標隼（CNS ) Λ4坭枋（2】0X297公犮） {請先閲讀背面之注意事項再填寫本頁) -裝. 訂 經濟部中央標準局员工消费合作社印敦 4 o y (J 7 2 A 7 _B7_ 玉、發明説明（（俨） 的旋轉及通電，再反覆進行上述處理室的旋轉及停止；上 述微粒子和上述鍍液的比重差爲〇_〇4〜22.00 » 本發明13之導電性微粒子製造方法，係藉由鍍敷步 驟以於微粒子的表面形成鍍層之導電性微粒子製造方法， 其特徵在於，上述鍍敷步驟之進行所使用之導電性微粒子 製造裝置，係具有：於側面具陰極並具有可使鍍液通過而 排出的過濾部之可旋轉的處理室，以及設置成不與上述處 理室中的陰極接觸之陽極；基於上述處理室的旋轉之離心 力的效果以使微粒子接觸上述陰極，而在此狀態下進行通 電以於上述微粒子的表面形成鍍層，之後停止上述處理室 的旋轉及通電，再反覆進行上述處理室的旋轉及停止；上 述處理室的旋轉是在離心效果爲2_0〜40·0的旋轉數下進行 ，上述通電是在上述處理室的旋轉開始〇_5~1〇秒後開始， 上述處理室的停止時間是0〜10秒15 本發明16之導電性微粒子，係將外表面電鍍之導電 性微粒子，其特徵在於，粒徑〇·5〜5000 、長寬比未滿 1.5、變動係數50%以下，以及使用該微粒子之各向異性導 電接著劑及導電連接構造體。 本發明17之電子電路裝置’是將電子電路元件的電 極部和電子電路基板的電極部電連接所構成的電子電路裝 置，其特徵在於，上述連接係使用於球狀彈性基材粒子的 表面設有導電金屬層之積層導電性微粒子以進行，於上述 電子電路元件的電極部和上述電子電路基板的電極部之連 接部上，對各連接部係藉由複數個上述積層導電性微粒子 _______2J____________ 本紙張尺度適用中國國家標準（〔奶）八4規怙（210/ 297公#) ----------------訂------.旅 (婧先閲讀背面之注意事項再填寫本育) 45^072 A7 B7 五、發明説明（ί°|) 以電連接。 [圖式之簡單說明] (請先閲讀背面之注意事項再"寫本頁) 圖1係顯示本發明的導電性微粒子製造裝置的一實施 彤態的斷面之槪略圖。 圖2係顯示習知的導電性微粒子製造裝置的斷面之槪 略圖。 圖3係顯示本發明的導電性微粒子製造裝置的一實施 形態中的中空罩之擴大槪略圖。 圖4係顯示本發明的導電性微粒子製造裝置的一實施 形態中的中空罩之擴大槪略圖。 圖5係顯示本發明的導電性微粒子製造裝置的一實施 彤態中的中空罩之擴大槪略圖。 .圖6係顯示本發明的導電性微粒子製造裝置的一實施 形態中的中空罩之擴大槪略圖。 圖7係顯示本發明的導電性微粒子製造裝置的一實施 形態的處理室密封裝方式的斷面之槪略圖。 經濟部中央標準局员工消费合作社印製 圖8係顯示本發明的導電性微粒子製造裝置的一實施 形態中的多孔體之擴大槪略圖。. 圖9係顯示本發明的導電性微粒子製造裝置的一實施 形態的斷面之槪略圖。 圖10係顯示本發明的導電性微粒子製造裝置的一實 施形態的斷面之槪略圖。 圖II係顯示本發明的導電性微粒子製造裝置的一實 施形態的斷面之槪略圖。 __22___ 民張尺度通用中國國家標準（CNS ) Μ規枋（210Χ2<ί7公玷） A7 A7 經濟部中央標準局頁工消费合作社印製 五、發明説明 圖12係顯示本發明的導電性微粒子製造裝置的一實 施形態的斷面之槪略圖。 圖Π係實施例10中高壓均化器的系統流程圖。 圖14係實施例10中高壓均化器的室內流程圖。 圖15係實施例15中電鍍裝置和粉碎裝置(高壓均化器 )組合後的循環方式流程圖。 圖16係實施例16中電鍍裝置和粉碎裝置(均質混合器 )組合後的循環方式流程圖。 圖17係實施例17中電鍍裝置和粉碎裝置(靜力混合器 )組合後的循環方式流程圖。 圖18係實施例18中電鍍裝置和粉碎裝置(超音波產生 器)組合後的循環方式流程圖。 .圖19係顯示本發明11的導電性微粒子製造裝置的一 實施形態的斷面之槪略圖。 圖20係顯示習知的導電性微粒子製造裝置的斷面之 _略圖。 圖21係顯示實施例20的運轉條件之時序圖。 圖22係顯示實施例21的運轉條件之時序圖》 圖23係顯示比較例10的運轉條件之時序圖。 圖24係顯示比較例11的運轉條件之時序圖。 圖25係顯示無電解鍍鎳膜厚和微粒子的比重間的關 係之圖形。 圖26係顯示本發明14的運轉條件的一實施形態之時 序圖。 _21_____ &張尺度適用中國國家棉準（CNS ) Λ4规梠（210X297公筇） — 1--------------ΐτ—~-----Μ (請先閲讀背面之注意事項再域寫本頁) A7 459072 五、發明説明（Μ ) 圖27係顯示實施例27及實施例31的運轉條件之時 序圖。 圖28係顯示實施例28的運轉條件之時序圖。 圖29係顯示實施例29的運轉條件之時序圖。 圖30係顯示實施例30的運轉條件之時序圖。 圖31係顯示實施例31的運轉條件之時序圖。 圖32係顯示實施例32的運轉條件之時序圖。 圖33係顯示實施例33的運轉條件之時序圖。 圖34係顯示比較例14的運轉條件之時序圖。 圖35係顯示比較例15的運轉條件之時序圖。 圖36係顯示比較例16的運轉條件之時序圖。 圖37係顯示比較例17的運轉條件之時序圖。 .圖38係顯示比較例18的運轉條件之時序圖。 圖39係將本發明17的積層導電性微粒子模式地顯示 之斷面圖。 圖40係將本發明17的積層導電性微粒子模式地顯示 之斷面圖。 圖41係將載置有積層導電性微粒子之本發明的電子 電路元件模式地顯示之斷靣圖。 圖42係將載置有積層導電性微粒子之本發明的電子 電路基板模式地顯示之斷面圖。 圖43係將載置有積層導電性微粒子之本發明的電子 電路元件模式地顯示之斷面圖。 圖44係將載置有積層導電性微粒子之本發明的電子 -24------ 本紙張尺度適用中國國家標準（CNS ) W见枯（210X2y·/公处） (請先間讀背面之注意事項再魂寫本頁)Printed by the 1T Shellfish Consumer Cooperative of the Central Provincial Bureau of the Ministry of Economic Affairs 45 9072 Α7 Β7 Jade printed by the Consumer Cooperative of the Central Standard Bureau of the Ministry of Economic Affairs, the invention description ([G) a disc-shaped base plate fixed to the upper end of the vertical drive shaft; A porous body disposed on the outer periphery of the bottom plate, through which only the plating solution can pass; a contact ring disposed on the upper surface of the porous body; a hollow cover, and a hole joined to an end portion of a conical truncated cover having an opening in the upper center The hollow cylinder having the same opening diameter, the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; the rotatable body formed between the outer peripheral portion of the hollow cover and the bottom plate and sandwiching the porous body and the contact ring is rotatable A processing chamber; a supply pipe for supplying the plating solution from the opening to the processing chamber; a container for receiving the plating solution scattered from the holes of the porous body; and for discharging the plating solution stored in the container A discharge pipe; an electrode for contacting the plating solution inserted through the opening: an electroplating device; the plating step includes: a plating step of placing particles before the application in the processing chamber; While supplying the plating solution into the processing chamber while rotating the processing chamber around its rotation axis; and the single particle formation step 'for dispersing the agglomerates of fine particles generated in the above plating step', crushing and single particle formation, At least one selected from the group consisting of shear force, impact force, and pressure reduction is imparted. A tenth aspect of the present invention is a conductive fine particle manufacturing apparatus for performing the conductive fine particle manufacturing method of the seventh, eighth, or ninth aspect of the present invention. According to the eleventh aspect of the present invention, the conductive fine particle manufacturing device includes a disc-shaped base plate fixed to an upper end portion of a vertical drive shaft, a porous body disposed on an outer periphery of the base plate, and a porous body through which only a plating solution can pass; and disposed on the porous body. Contact ring for energizing; there is a hollow cover with an opening at the center of the upper part; ------__ 1Q _ The standard of this paper is applicable to China National Cotton Standard (CNS) Λ4 ^ 梏 (210X29 秘 #) (Please read the precautions on the back first Write this page again.) Binding, printing, k Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 459072 A7 _ F37 Jade, description of the invention (/ ^) formed between the outer periphery of the hollow cover and the bottom plate A rotatable plating bath of a porous body and a contact ring; a processing chamber including an inner surface of the contact ring separated by a partition through which only a plating solution can pass in the plating bath; and a plating solution from the opening A supply pipe supplied to the plating tank; a container for receiving a plating solution scattered from the holes of the porous body; a discharge pipe for discharging the plating solution stored in the container; a contact plating inserted through the opening Fluid electrode. The conductive fine particle manufacturing method of the present invention 12 is a conductive fine particle manufacturing method for forming a plating layer on the surface of the fine particles by a plating step, and is characterized in that the conductive fine particle manufacturing device used for performing the plating step is It has: a rotatable processing chamber having a cathode on the side and a filtering part that allows the plating solution to pass through and be discharged, and an anode provided so as not to contact the cathode in the processing chamber; the plating step is performed by repeating the above The rotation and stop of the processing chamber are carried out, and include: a step of energizing to form a plating layer on the surface of the particles while the particles are in contact with the cathode, and a stirring step of stirring the particles. The conductive fine particle manufacturing method of the present invention 13 is a conductive fine particle manufacturing method for forming a plating layer on the surface of the fine particles by a plating step, and is characterized in that the conductive fine particle manufacturing device used for performing the plating step is It has a rotatable processing chamber with a cathode on the side and a filter unit that allows the plating solution to pass through and is discharged, and an anode that is not in contact with the cathode in the processing chamber; the effect of centrifugal force based on the rotation of the processing chamber In order to make the fine particles contact the above-mentioned cathode, and conducting 1 in this state, I. < > ·-* 1 ···· Electricity to form a mineral layer on the surface of the fine particles, and then stop the above. Processing Room __—.--- " _2 £ L ______________ This paper size is applicable to Chinese National Standards (CNS) Λ4 坭 枋 (2) 0X297 public 犮 {Please read the precautions on the back before filling this page)-Install . Order the consumer co-operatives of the Central Standard Bureau of the Ministry of Economic Affairs, the consumer cooperative Indun 4 oy (J 7 2 A 7 _B7_ Jade, invention description ((俨)) rotation and power, and then repeatedly rotate and stop the processing chamber; The specific gravity difference between the fine particles and the plating solution is 〇_〇4 ~ 22.00 »The conductive fine particle manufacturing method of the present invention 13 is a manufacturing method of conductive fine particles that forms a plating layer on the surface of the fine particles by a plating step, which is characterized by The conductive fine particle manufacturing device used for the above-mentioned plating step includes a rotatable processing chamber having a cathode on the side and a filter unit that allows the plating solution to pass through and be discharged, and is provided so as not to be in contact with the processing chamber. The anode in contact with the cathode; based on the effect of the centrifugal force of the rotation of the processing chamber to make the particles contact the cathode, and in this state, energize to form a coating on the surface of the particles, and then stop the rotation and power of the processing chamber, The rotation and stop of the processing chamber are repeated repeatedly; the rotation of the processing chamber is performed at a rotation number of 2_0 to 40 · 0, and the energization is performed after the rotation of the processing chamber is started within 0-5 to 10 seconds. Initially, the stop time of the processing chamber is 0 to 10 seconds. 15 The conductive fine particles of 16 of the present invention are conductively plated on the outer surface. Microparticles are characterized by having a particle diameter of 0.5 to 5000, an aspect ratio of less than 1.5, a coefficient of variation of 50% or less, and an anisotropic conductive adhesive and a conductive connection structure using the fine particles. Electronic circuit of the present invention 17 The “device” is an electronic circuit device configured by electrically connecting an electrode portion of an electronic circuit element and an electrode portion of an electronic circuit substrate, wherein the connection is a laminated layer provided with a conductive metal layer on a surface of a spherical elastic substrate particle. Conductive fine particles are applied to the connection portion between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate, and each of the connection portions is made of a plurality of the above-mentioned laminated conductive fine particles. _______2J____________ This paper size applies to Chinese national standards ((Milk) 8 Regulations (210/297 公 #) ---------------- Order --------. Brigade (Jing first read the notes on the back before filling This education) 45 ^ 072 A7 B7 V. Description of invention (ί ° |) Connected by electricity. [Brief description of the drawings] (Please read the precautions on the back before writing this page) Fig. 1 is a schematic diagram showing a cross section of an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 2 is a schematic cross-sectional view showing a conventional conductive fine particle manufacturing apparatus. Fig. 3 is a schematic enlarged view showing a hollow cover in an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 4 is an enlarged view showing a hollow cover in an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 5 is a schematic enlarged view showing a hollow cover in one embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 6 is an enlarged view showing a hollow cover in an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 7 is a schematic cross-sectional view showing a sealing method of a processing chamber according to an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. FIG. 8 is a schematic diagram showing the enlargement of the porous body in one embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 9 is a schematic cross-sectional view showing an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. 10 is a schematic cross-sectional view showing an embodiment of the conductive fine particle manufacturing apparatus of the present invention. Fig. II is a schematic cross-sectional view showing an embodiment of the conductive fine particle manufacturing apparatus of the present invention. __22___ Common Chinese National Standards (CNS) Standards M (210 × 2 < ί7 玷) for the Zhangzhang Standard A7 A7 Printed by the Pager Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the Invention Figure 12 shows a device for manufacturing conductive particles according to the present invention. A schematic view of a cross section of an embodiment. FIG. 11 is a system flowchart of a high-pressure homogenizer in Embodiment 10. FIG. FIG. 14 is an indoor flowchart of a high-pressure homogenizer in Embodiment 10. FIG. FIG. 15 is a flowchart of a circulation method after a combination of a plating device and a pulverizing device (high-pressure homogenizer) in Embodiment 15. FIG. FIG. 16 is a flowchart of a circulation method in which a plating device and a pulverizing device (homogeneous mixer) are combined in Embodiment 16. FIG. FIG. 17 is a flowchart of a circulation method in which a plating device and a pulverizing device (static mixer) are combined in Embodiment 17. FIG. Fig. 18 is a flowchart of a circulation method in which the electroplating device and the pulverizing device (ultrasonic generator) are combined in the eighteenth embodiment. Fig. 19 is a schematic cross-sectional view showing an embodiment of the conductive fine particle manufacturing apparatus of the eleventh aspect of the present invention. Fig. 20 is a schematic cross-sectional view showing a conventional conductive fine particle manufacturing apparatus. Fig. 21 is a timing chart showing operating conditions of the embodiment 20. Fig. 22 is a timing chart showing the operating conditions of Example 21 "Fig. 23 is a timing chart showing the operating conditions of Comparative Example 10; FIG. 24 is a timing chart showing operating conditions of Comparative Example 11. FIG. Fig. 25 is a graph showing the relationship between the thickness of electroless nickel plating and the specific gravity of fine particles. Fig. 26 is a timing chart showing an embodiment of the operating conditions of the 14th invention. _21_____ & Zhang scale is applicable to China National Cotton Standard (CNS) Λ4 Regulation (210X297) 筇 — 1 -------------- ΐτ— ~ ----- Μ (Please read first (Notes on the back are written on this page.) A7 459072 V. Description of the Invention (M) Figure 27 is a timing chart showing the operating conditions of Example 27 and Example 31. Fig. 28 is a timing chart showing the operating conditions of the twenty-eighth embodiment. FIG. 29 is a timing chart showing the operating conditions of the embodiment 29. FIG. FIG. 30 is a timing chart showing the operating conditions of the thirty-first embodiment. Fig. 31 is a timing chart showing the operating conditions of the thirty-first embodiment. Fig. 32 is a timing chart showing the operating conditions of the thirty-second embodiment. Fig. 33 is a timing chart showing the operating conditions of Example 33. FIG. 34 is a timing chart showing operating conditions of Comparative Example 14. FIG. FIG. 35 is a timing chart showing operating conditions of Comparative Example 15. FIG. FIG. 36 is a timing chart showing operating conditions of Comparative Example 16. FIG. FIG. 37 is a timing chart showing operating conditions of Comparative Example 17. FIG. Fig. 38 is a timing chart showing the operating conditions of Comparative Example 18. Fig. 39 is a cross-sectional view schematically showing a laminated conductive fine particle according to 17 of the present invention. Fig. 40 is a cross-sectional view schematically showing a laminated conductive fine particle according to 17 of the present invention. Fig. 41 is a fragmentary view schematically showing an electronic circuit element of the present invention in which laminated conductive fine particles are placed. Fig. 42 is a cross-sectional view schematically showing an electronic circuit board of the present invention in which laminated conductive fine particles are placed. Fig. 43 is a sectional view schematically showing an electronic circuit element of the present invention in which laminated conductive fine particles are placed. Figure 44 is the electron-24 of the present invention on which laminated conductive particles are placed. This paper size applies Chinese National Standard (CNS). W see dry (210X2y · / public place) (please read the back first) (Precautions to write this page again)

'1T '" 經濟部中央標準局負工消f合作社印製 經濟部t央標準局只工消f合作社印製 459072 A7 ______Ml 五、發明説明（VL) 電路基板模式地顯示之斷面圖。 圖45係將本發明的電子電路裝置模式地顯示之斷面 圖。 圖46係用以說明使用銲錫凸塊的反扣晶片接合法之 說明圖β 圖47係用以說明使用具有高剛性芯的銲錫被覆球的 反扣晶片接合法之說明圖。 圖48係用以說明使用複製方式的反扣晶片接合法之 說明圖。 圖49係用以說明使用導電性樹脂構成的凸塊之反扣 晶片接合法之說明圖。 圖46係用以說明使用各向異性導電接著劑的反扣晶 片接合法之說明圖。 圖51係用以說明本發明所用的電鍍裝置之說明圖。 [符號說明] 1〜中空罩，2〜電極，2a〜陽極，3〜驅動軸，4~容器， 5〜位準感應器，6〜供給管，7〜排出管，8〜開口部，9〜接觸 電刷，10〜底板，11〜接觸環，12〜環狀多孔體，13〜處理室 ，14〜中空罩密封用上蓋，15〜密封件，16〜陽極側接觸電 刷，17〜萬向接頭，18〜空氣抽出閥，19〜環狀多孔質保持 體，20〜片狀過濾器’ 21〜板狀多孔體’ 22〜板狀多孔質保 持體，214~容器，25卜鍍液及微粒子旳懸濁液，216〜泵， 217〜壓力計，218〜室’ 219〜熱交換器’ 220〜鍍液接受槽’ 221〜微粒子取出管，222〜解碎微粒子供給管’ 223〜微粒子 --- -----—55------- (張尺度適用中國國家標隼（CNS ) Λ4^格（210 X 297公#) ----------¼------1T------A. (請先閱讀背面之注意事項再填、寫本頁) 459072 A7 B7 五、發明説明（71) 循環栗，224〜鍍液循環泵，225〜管線均質混合器，:226〜靜 . ...... 態混合器，227〜超音波產生器’ 228〜純水，229〜玻璃製容 器，230〜解碎粒子送出泵，231〜鍍敷微粒子抽出泵，313〜 鍍槽，314〜隔板，315~處理室’ 316〜過濾板，317〜多孔質 保持體，1Π〜基材粒子，122〜導電性金屬層，333〜低融點 金屬層，444〜導電性微粒子，555〜電極部，666〜電子電路 元件，777〜電極部，S88〜電子電路基板，999HS融點金屬 ，510〜底過濾器。 [發明之詳細揭示] 以下，參照圖面以說明本發明的導電性微粒子之製造 裝置的一實施形態。 圖1顯示本發明的導電性微粒子之製造裝置。 ,本發明1之導電性微粒子的製造裝置，係具有：固定 於垂直驅動軸的上端部之圓盤狀底板10;配置於上述底板 10的外周上面之僅鍍液可通過之多孔體12 ;配置於上述多 孔體上面之通電用的接觸環11 ;中空罩1，於上部中央具 有開口部8之圓錐台狀的罩之上端部接合孔徑相同於開口 徑之中空圓筒，該中空圓筒的上端部係朝中空圓筒內壁側 回折；形成於上述中空罩1的外周部與底板10間之夾住上 述多孔體12與接觸環之可旋轉的處理室13 ;將鍍液從 上述開口部8供給至上述處理室13之供給管6 :用於接收 從上述多孔體12的孔飛散出的鍍液之容器4 :用以排出儲 留於上述容器4中的鍍液之排出管7 ;從上述開口部8插 入之接觸鍍液用的電極2 ° _____2d__________ &张尺度適用中國國家橾率（CNS )八4规招（公> ) ------------^裝-------π------it (請先閱讀背面之注意寧項再^寫本頁) 經濟部中央標準局貝工消费合作社印奴 經濟部中央標準局貝工消费合作社印製 4〜ϋ72 Α7 Β7 _ 五、發明説明卜& 上述多孔體12係形成環狀，又爲塑膠或陶瓷所形成 之具有連通氣泡的過濾器狀多孔體’所採用的孔徑係鍍液 等處理液可通過'微粒子及所得之導電性微粒子無法通過 〇 鍍液係藉由驅動軸3的旋轉承受離心力以通過多孔體 12，由於會飛散至塑膠容器4內故處理室內13的鍍液液面 會降低，藉由鍍液供給用的洪給管6以將來自開口部8之 鍍液供給至處理室13 ’使用位準感應器5以將液量控制成 處理室內13的液面經常和電極2a形成接觸狀態。圖1中 ，:2代表正電極而連接於上述陽極2a。9代表接觸電刷。 電極用電源未圖示出。 本發明1中，係將鍍液從鍍液供給管6供給至處理室 內13，接著，從中空罩1的開口部8將形成有導電基底層 之微粒子投入處理室13內以使其分散。該導電性基底層之 形成，宜使用無電解鍍敷法，並非以此爲限而可藉由其他 周知的導電性賦予方法以形成出。將微粒子置入處理室13 內時，驅動軸3已開始旋轉。鍍液會隨著驅動軸3的旋轉 通過多孔體12向處理室13的外部流出，其減少量是經由 鍍液供給管6加以補給。其他鍍敷條件和通常的鍍敷時相 同。 爲了形成更均一的鍍層，較佳爲，將驅動軸3的旋轉 方向每隔一定時間逆轉或使其停止β 本發明1的導電性微粒子之製造裝置中*中空罩1的 形狀，係於上部中央具有開口部8之圓錐台形的罩上端部 ___22_________ 紙張尺度適用中國國家標隼（CNS ) Λ4現捎（210X297公及^ ^裝------1------Μ (請先閱讀背面之注意事項再接耗本頁) 459072 A7 137 經濟部中央標隼局貞工消资合作社印製 五、發明説明（4 ) 接合孔徑相同於開口徑之中空圓筒，該中空圓筒的上端部 係朝中空圓筒內壁側回折，由於形成這種形狀，藉由增加 驅動軸3的旋轉數以提高處理室13的周速，如圖3所示般 ，基於旋轉的離心力作用之受到向外周方向的力之鍍液’ 在處理室內會形成硏缽狀的旋渦，而沿著中空罩1的內壁 向上昇，即使如此也不會造成溢流。再進一步增加周速， 使得液上昇至罩上端，即使如此液也不致飛散至中空罩1 的外部<因此，本發明1的導電性微粒子之製造裝置，在 形成有導電性基底層之微粒子的粒徑爲ΙΟμιη以下時，可 使處理室13的周速提高至可形成均一鍍層之足夠的速度。 中空罩1的上部形狀，只要使鍍液不致從處理室溢流 出即可，例如可爲圖4、圖5 '圖6等形狀。又，如圖7所 示般，藉由安裝於電極2上之中空罩密封用的上蓋14和中 空罩1以密封處理室13內，處理室13和電極2皆形成可 旋轉的構造亦可。此情況下，不需使用液面計以控制液面 位準^ 本發明2的導電性微粒子之製造裝置中，中空罩爲上 部中央具有開口部之圓錐台形，又多孔體是在多孔質保持 體的內側面具有僅鍍液可通過的孔徑，貼合有厚度 10〜1000/zm之片狀的過濾器。除此之外，係和本發明i的 導電性微粒子之製造裝置具有相同的構成。 本發明2中，藉由使用這種多孔體，不致降低液通過 量又可防止粒子之堵塞及流出。 圖8係顯示本發明2所用的多孔體的一實施形態之斷 ___28 11 . I ~H 訂 (請先閱讀背面之注意事項再资寫本頁) 本紙张尺度適用中國國家摞準（CNS ) Λ4规枱（2丨0·〆297公处） 經濟部中央標率局貞工消费合作社印製 459072 A7 _______B7 五、發明説明) 面構造。此實施形態中所用之多孔體，係於環狀的多孔質 保持體19內側面具有僅可通過鍍液之孔徑，並貼附有厚 10〜1000#m之片狀過濾器20。過濾器20，可僅貼附於環 狀多孔質保持體19的內側面，但較佳爲，延長並捲入環狀 多孔質保持體19的上面及下面，而被接觸環11和底板1〇 所夾住。 環狀多孔質保持體19的材質並沒有特別的限定，例 如可使用聚丙烯、聚乙烯、陶瓷等。 環狀多孔質保持體19的孔徑，和置入處理室13內的 微粒子粒徑無關，只要是具有形成處理室所需的強度即可 ，宜爲50〜600 ν m，更佳爲70〜300 # m。 片狀過濾器20的材質沒有特別的限定，例如可使用 尼龍6、聚酯不織布、鐵氟龍等。 片狀過濾器20的孔徑，係配合被鑛物之微粒子的粒 徑而適當選擇0.5〜100/zm者。又，可進行過濾器的重疊貼 合以調整通過量。 本發明3的導電性微粒子之製造裝置中，多孔體之構 造爲，於多孔質保持體的內側面具有僅可通過鍍液之孔徑 ，並貼合有厚10〜1000/zm之板狀過濾器。除此之外，係 和本發明1的導電性微粒子之製造裝置具有相同的構成。 亦即，本發明3的導電性微粒子之製造裝置，係同時具有 1本發明1的導電性微粒子製造裝置的特徵之上端部朝中空 圓筒內壁側回折之中空罩、以及本發明2的導電性微粒子 製造裝置的特徵之環狀多孔質保持體和板狀過濾器構成的 __22_____ 本紙張尺度適用中國國家標準（CNS ) Λ4规梢（210X 297公) (婧先閱讀背面之注意事項再缚岛本頁) -丁 -8 腺 459072 A7 _ B7 五、發明説明（/]) 環狀多孔體》 本發明3之導電性微粒子製造裝置，由於形成這種構 成，若增加處理室的周速，基於旋轉的離心力作用之受到 向外周方向的力之鍍液，在處理室內會形成硏缽狀的旋渦 ，而沿著中空罩1的內壁向上昇，即使如此也不會造成溢 流或液之飛散至中空罩的外部，又，不致降低液通過量又 可防止粒子的堵塞、流出，即使形成有導電性基底層的微 粒子粒徑爲l〇〇Mm以下，亦可高效率地形成均一的鍍層 〇 圖9係顯示本發明4的導電性微粒子之製造裝置之一 實施形態。 本發明4之導電性微粒子的製造裝置，係具有：固定 於垂直驅動軸的上端部之圓盤狀底板10;配置於上述底板 10的外周上面之僅鍍液可通過之板狀多孔體21 ;配置於上 述多孔體21上面之通電用的接觸環11 ;於上部中央具有 開口部8之圓錐台狀的中空罩1 ;形成於上述中空罩1的 外周部與底板10間之夾住上述多孔體21與接觸環11之可 旋轉的處理室13 ;將鍍液從上述開口部8供給至上述處理 室13之供給管6 ;用於接收從上述多孔體12的孔飛散出 的鍍液之容器4 ;用以排出儲留於上述容器4中的鍍液之 排出管7 :從上述開口部8***之接觸鍍液用的電極2。 本發明4之導電性微粒子製造裝置中，中空罩係形成 上部中央具有開口部之圓錐台形，又多孔體是板狀的，此 外是和本發明1的導電性微粒子之製造裝置的構造相同。 -------3Q_________ (U長尺度適用中國國家標牟（CNS ) Λ4规梠（210Χ297々ΰί ) ---------^裝------ΐτ------Μ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作社印製 經濟部中央標準局員工消费合作社印掣 459072 A7 ____B7 五、發明説明（>#) 使用環狀多孔體之導電性微粒子製造裝置中，要對粒 徑10〇em以下的微粒子進行鍍敷時，因液之從多孔體流 出，微粒子會被按壓於多孔體濾過靣上，結果有時會有環 狀凝集物的產生。此處，和環狀多孔體相較下，板狀多孔 體之鍍液可通過的截面積大。因此，本發明4的導電性微 粒子製造裝置中，濾過面的通過流速會變慢，可解決因微 粒子之被按壓於多孔體濾過面上所致之環狀凝集物的產生 之問題。 本發明5之導電性微粒子製造裝置中，中空罩的形狀 ’是在上部中央具有開口部之圓錐台形的罩上端部接合孔 徑相同於開口徑之中空圓筒，該中空圓筒的上端部係朝中 空圓筒內壁側回折。除此外係和本發明4的導電性微粒子 製造裝置的構造相同。亦即，本發明5的導電性微粒子製 造裝置，係同時具有本發明1的導電性微粒子製造裝置的 特徵之上端部朝中空圓筒內壁側回折之中空罩、以及本發 明4的導電性微粒子製造裝置的特徵之板狀多孔體 圖10係顯示本發明5的導電性微粒子製造裝置之一 實施形態。 本發明5的導電性微粒子製造裝置，由於具有這種構 成，若提高處理室的周速，基於旋轉的離心力作用之受到 向外周方向的力之鍍液，在處理室內會形成硏缽狀的旋渦 ，而沿著中空罩1的內壁向上昇，即使如此也不會造成溢 流或液之飛散至中空罩的外部，又，濾過面的通過流速會 變慢，可解決因微粒子之被按壓於多孔體濾過面上所致之 —---—-----31-_____：_________ 本紙張尺度適用中國國家標皁（CNS ) Λ4規桔（2〗0X：297公筇） (請先閱讀背面之注意事項再功，¾本頁)'1T' " Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and printed by cooperatives 459072 A7 ______Ml Sectional view of the circuit board shown in schematic form. Fig. 45 is a sectional view schematically showing an electronic circuit device according to the present invention. Fig. 46 is a diagram for explaining a reverse wafer bonding method using a solder bump. Fig. 47 is a diagram for explaining a reverse wafer bonding method using a solder-coated ball having a high rigid core. Fig. 48 is an explanatory diagram for explaining a reverse wafer bonding method using a copy method. Fig. 49 is a diagram for explaining a reverse wafer bonding method using bumps made of a conductive resin. Fig. 46 is an explanatory diagram for explaining a reverse wafer bonding method using an anisotropic conductive adhesive. Fig. 51 is an explanatory diagram for explaining a plating apparatus used in the present invention. [Description of symbols] 1 ~ hollow cover, 2 ~ electrode, 2a ~ anode, 3 ~ drive shaft, 4 ~ container, 5 ~ level sensor, 6 ~ supply pipe, 7 ~ discharge pipe, 8 ~ opening, 9 ~ Contact brush, 10 to bottom plate, 11 to contact ring, 12 to annular porous body, 13 to processing chamber, 14 to top cover for hollow cover sealing, 15 to seal, 16 to anode side contact brush, 17 to universal Connector, 18 ~ air extraction valve, 19 ~ ring porous holder, 20 ~ sheet filter '21 ~ plate porous body '22 ~ plate porous holder, 214 ~ container, 25μ solution and fine particles旳 Suspension liquid, 216 ~ pump, 217 ~ manometer, 218 ~ chamber '219 ~ heat exchanger' 220 ~ plating solution receiving tank '221 ~ fine particle extraction tube, 222 ~ disintegrated fine particle supply tube' 223 ~ fine particle- ------— 55 ------- (The Zhang scale is applicable to the Chinese National Standard (CNS) Λ4 ^ lattice (210 X 297 public #) ---------- ¼ --- --- 1T ------ A. (Please read the precautions on the back before filling and writing this page) 459072 A7 B7 V. Description of the invention (71) Circulating pump, 224 ~ plating solution circulating pump, 225 ~ pipe Homogeneous mixer,: 226 ~ static ....... State mixer, 227 ~ ultrasonic generator '228 ~ pure water, 229 ~ glass container, 230 ~ smashing particle delivery pump, 231 ~ plating particle extraction pump, 313 ~ plating tank, 314 ~ separator, 315 ~ Processing chamber '316 ~ filter plate, 317 ~ porous holder, 1Π ~ substrate particles, 122 ~ conductive metal layer, 333 ~ low melting point metal layer, 444 ~ conductive fine particles, 555 ~ electrode part, 666 ~ electron Circuit element, 777 ~ electrode section, S88 ~ electronic circuit board, 999HS melting point metal, 510 ~ bottom filter. [Detailed disclosure of the invention] Hereinafter, an implementation of the manufacturing apparatus of the conductive fine particles of the present invention will be described with reference to the drawings. Fig. 1 shows a manufacturing apparatus of conductive fine particles of the present invention. A manufacturing apparatus of conductive fine particles of the present invention 1 includes a disk-shaped base plate 10 fixed to an upper end portion of a vertical drive shaft, and is disposed on the base plate 10 A porous body 12 on the outer periphery of which only the plating solution can pass; a contact ring 11 for conducting electricity arranged on the above porous body; a hollow cover 1 having an upper part joint hole at the upper end of a truncated cone-shaped cover having an opening 8 in the upper center The hollow cylinder having the same diameter as the opening diameter, the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; the porous body 12 and the contact ring are formed between the outer peripheral portion of the hollow cover 1 and the bottom plate 10 A rotatable processing chamber 13; a supply pipe 6 for supplying the plating solution from the opening 8 to the processing chamber 13: a container 4 for receiving the plating solution scattered from the holes of the porous body 12: for discharging the storage The discharge pipe 7 of the plating solution remaining in the above container 4; the electrode for contacting the plating solution inserted from the above-mentioned opening 8 2 ° _____2d__________ & Zhang scale is applicable to China National Standards (CNS) Eighty Four Regulations (public > ) ------------ ^ Installation ------- π ------ it (Please read the note on the back before you write this page) Central Bureau of Standards, Ministry of Economic Affairs Shellfish Consumer Cooperative, printed by Shellfish Consumer Cooperative, Central Standards Bureau of the Ministry of Economics and Industry of India 4 ~ ϋ72 Α7 Β7 _ V. Description of the invention & The treatment liquid such as the pore size plating solution used in the filter-like porous body can pass through the fine particles and the obtained conductive fine particles. The plating solution cannot receive centrifugal force through the rotation of the drive shaft 3 to pass through the plating solution. The plating solution passes through the porous body 12 because it will be scattered into the plastic container 4. Therefore, the plating solution level in the processing chamber 13 will be lowered. The tube 6 is used to supply the plating solution from the opening 8 to the processing chamber 13 ′. The level sensor 5 is used to control the amount of liquid so that the liquid surface of the processing chamber 13 is always in contact with the electrode 2 a. In FIG. 1,: 2 represents a positive electrode and is connected to the anode 2a. 9 stands for contact brush. The electrode power source is not shown. In the first aspect of the present invention, the plating solution is supplied from the plating solution supply pipe 6 to the processing chamber 13, and then the particles having the conductive base layer formed therein are dispersed into the processing chamber 13 through the opening 8 of the hollow cover 1. The formation of the conductive base layer is preferably an electroless plating method, and is not limited thereto, and can be formed by other known methods for imparting conductivity. When the fine particles are placed in the processing chamber 13, the drive shaft 3 has started to rotate. The plating solution flows out of the processing chamber 13 through the porous body 12 as the drive shaft 3 rotates, and the amount of reduction is replenished through the plating solution supply pipe 6. The other plating conditions are the same as those of ordinary plating. In order to form a more uniform plating layer, it is preferable to reverse or stop the rotation direction of the driving shaft 3 at regular intervals. Β The shape of the hollow cover 1 in the manufacturing apparatus of the conductive fine particles of the present invention 1 is tied to the upper center The upper end of the conical frustum-shaped cover with the opening 8 is ___22_________ The paper size is applicable to the Chinese national standard (CNS) Λ4 now (210X297 male and ^ ^ installed ---------------- M (please first (Please read the notes on the back, and then use this page) 459072 A7 137 Printed by Zhengong Consumers Cooperatives, Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (4) The hollow cylinder with the same hole diameter as the opening diameter. The upper end is folded back toward the inner wall side of the hollow cylinder. Due to this shape, the peripheral speed of the processing chamber 13 is increased by increasing the number of rotations of the drive shaft 3, as shown in FIG. The plating solution of the force in the outer peripheral direction will form a bowl-like vortex in the processing chamber, and rise upward along the inner wall of the hollow cover 1, even if this does not cause overflow. Further increase the peripheral speed to make the liquid rise Up to the top of the hood, even then Does not scatter to the outside of the hollow cover 1 < Therefore, when the particle size of the fine particles having the conductive base layer formed in the conductive fine particle manufacturing device of the present invention 1 is 10 μm or less, the peripheral speed of the processing chamber 13 can be increased to Sufficient speed for uniform plating can be formed. The shape of the upper part of the hollow cover 1 is only required to prevent the plating solution from overflowing from the processing chamber. For example, the shape can be as shown in FIG. 4, FIG. 5, FIG. 6 and so on. Generally, the upper cover 14 for hollow cover sealing and the hollow cover 1 installed on the electrode 2 are used to seal the processing chamber 13, and both the processing chamber 13 and the electrode 2 can be formed in a rotatable structure. In this case, it is not necessary to use The level meter controls the level of the liquid level ^ In the manufacturing apparatus of the conductive fine particles according to the present invention 2, the hollow cover has a truncated cone shape with an opening in the upper center, and the porous body has a plating solution only on the inner side of the porous holder A sheet-like filter with a thickness of 10 to 1000 / zm can be bonded through the pore diameter. Other than that, it has the same structure as the manufacturing apparatus of the conductive fine particles of the present invention i. In the second invention, the Use this porous body It will not reduce the liquid throughput and prevent the particles from clogging and flowing out. Figure 8 shows the break of one embodiment of the porous body used in the present invention. ___28 11. I ~ H Order (Please read the precautions on the back before writing (This page) This paper standard applies to China National Standards (CNS) Λ4 gauge (2 丨 0 · 〆297). Printed by 459072 A7 _______B7 of the Central Standards Bureau of the Ministry of Economic Affairs. The porous body used in this embodiment is a ring-shaped porous holder 19 having a pore diameter that can pass through a plating solution only, and a sheet-shaped filter 20 having a thickness of 10 to 1000 #m is attached. The filter 20 may be attached only to the inner side surface of the annular porous holder 19, but is preferably extended and rolled into the upper and lower surfaces of the annular porous holder 19, and is contacted by the ring 11 and the bottom plate 1. Pinched. The material of the annular porous support 19 is not particularly limited, and for example, polypropylene, polyethylene, ceramics, or the like can be used. The pore diameter of the annular porous holder 19 is independent of the particle size of the microparticles placed in the processing chamber 13 as long as it has the strength required to form the processing chamber, preferably 50 to 600 ν m, and more preferably 70 to 300 # m. The material of the sheet filter 20 is not particularly limited, and for example, nylon 6, polyester non-woven fabric, Teflon and the like can be used. The pore diameter of the sheet filter 20 is appropriately selected from 0.5 to 100 / zm in accordance with the particle diameter of the fine particles of the mineral. The throughput can be adjusted by overlapping the filters. In the manufacturing apparatus of the conductive fine particles according to the third aspect of the present invention, the porous body has a structure in which the inner surface of the porous holder has a pore diameter capable of passing only a plating solution, and a plate-shaped filter having a thickness of 10 to 1000 / zm is bonded to the porous body. . Other than that, it has the same structure as the manufacturing apparatus of the conductive fine particles of the present invention 1. That is, the conductive fine particle manufacturing apparatus of the third aspect of the present invention has the characteristics of the conductive fine particle manufacturing apparatus of the first aspect of the present invention. The upper end portion is folded back toward the inner wall side of the hollow cylinder, and the conductive cover of the second aspect of the present invention is provided. __22_____ which is composed of a ring-shaped porous holder and a plate-shaped filter, which is a characteristic of the microparticle manufacturing device. This paper size applies the Chinese National Standard (CNS) Λ4 gauge (210X 297). (Island page)-Ding-8 gland 459072 A7 _ B7 V. Description of the invention (/)) Ring-shaped porous body "Since the conductive fine particle manufacturing apparatus of the present invention 3 has such a structure, if the peripheral speed of the processing chamber is increased, The plating solution, which is subjected to the force of the outer circumferential direction by the rotating centrifugal force, forms a bowl-shaped vortex in the processing chamber, and rises upward along the inner wall of the hollow cover 1. Even so, no overflow or liquid Scatters to the outside of the hollow cover without reducing the liquid throughput and prevents particle clogging and outflow. Even if the particle size of the conductive base layer is less than 100 mm, the efficiency is high. FIG form a uniform plating layer 9 billion lines showed one embodiment of apparatus for producing conductive fine particles of the present invention 4. The manufacturing apparatus of the conductive fine particles of the present invention 4, comprising: a disk-shaped bottom plate 10 fixed to the upper end portion of the vertical drive shaft; and a plate-shaped porous body 21 disposed on the outer periphery of the bottom plate 10 only through which the plating solution can pass; A contact ring 11 for conducting electricity arranged on the porous body 21; a truncated cone-shaped hollow cover 1 having an opening portion 8 in the upper center; a porous body formed between an outer peripheral portion of the hollow cover 1 and a bottom plate 10 21 and the contactable ring 11 of the rotatable processing chamber 13; a supply pipe 6 for supplying the plating solution from the opening 8 to the processing chamber 13; a container 4 for receiving the plating solution scattered from the holes of the porous body 12 ; A discharge pipe 7 for discharging the plating solution stored in the container 4: an electrode 2 for contacting the plating solution inserted through the opening 8. In the conductive fine particle manufacturing apparatus of the fourth aspect of the present invention, the hollow cover is formed in the shape of a truncated cone with an opening in the upper center, and the porous body is plate-shaped. The structure is the same as that of the conductive fine particle manufacturing apparatus of the first aspect. ------- 3Q_________ (U long scale applies Chinese National Standards (CNS) Λ4 Regulations (210 × 297Χί) --------- ^ 装 ------ ΐτ ---- --Μ (Please read the notes on the back before filling this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Shellfish Consumer Cooperative, printed by the Central Standards Bureau of the Ministry of Economic Affairs, the Consumers' Cooperative Stamp 459072 A7 ____B7 5. Description of the invention (>#) Use In an electroconductive fine particle manufacturing apparatus for a ring-shaped porous body, when fine particles having a particle size of 100 μm or less are plated, the liquid flows out of the porous body, and the fine particles are pressed against the porous body filter. There are cyclic agglomerates. Here, the cross-sectional area through which the plating solution of the plate-shaped porous body can pass is larger than that of the cyclic porous body. Therefore, in the conductive fine particle manufacturing apparatus of the fourth aspect of the present invention, By reducing the flow velocity, the problem of the generation of ring-shaped aggregates caused by the particles being pressed against the porous surface can be solved. In the conductive particle manufacturing apparatus of the fifth aspect of the present invention, the shape of the hollow cover is at the upper portion. Conical frustum-shaped cover upper end engaging hole having an opening in the center The hollow cylinder has the same diameter as the opening diameter, and the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder. Except for this, the structure is the same as that of the conductive fine particle manufacturing apparatus of the present invention 4. That is, the present invention 5 The conductive fine particle manufacturing device is a plate having the features of the conductive fine particle manufacturing device of the first aspect of the present invention, the upper end of which is folded back toward the inner wall side of the hollow cylinder, and the feature of the conductive fine particle manufacturing device of the fourth aspect. Fig. 10 shows an embodiment of the conductive fine particle manufacturing apparatus according to the fifth aspect of the present invention. Since the conductive fine particle manufacturing apparatus according to the fifth aspect of the present invention has such a structure, if the peripheral speed of the processing chamber is increased, the centrifugal force acts based on rotation. The plating solution subjected to the force in the outer circumferential direction will form a bowl-like vortex in the processing chamber, and rise upward along the inner wall of the hollow cover 1. Even so, no overflow or scattering of the liquid to the hollow cover is caused. Externally, the passing velocity of the filtering surface will be slower, which can solve the problem caused by the particles being pressed on the filtering surface of the porous body. --------------- 31 -_____: _________ The size of this paper is applicable to China National Standard Soap (CNS) Λ4 Regulation Orange (2〗 0X: 297 cm) (please read the precautions on the back first, then ¾ this page)

11T 459072 經濟部中央標準局貝工消费合作社印" Α7 Β7 五、發明説明（1) 環狀凝集物的產生之問題。 本發明6的導電性微粒子製造裝置，多孔體的形狀爲 ，在圓盤狀多孔質保持體的上面具有僅鍍液可通過的孔徑 ，並貼合有厚10〜l〇〇〇#m之板狀過濾器。除此外，係和 本發明4的導電性微粒子製造裝置或本發明5的導電性微 粒子製造裝置具有相同的構造。 本發明6中，藉由使用這種多孔體，不致降低液通過 量而可更有效地防止粒子的堵塞、流出β 本發明6的導電性微粒子製造裝置之一實施形態顯示 圖11中。 此實施形態所用之多孔體，係在板狀多孔質保持體22 的上面具有僅鍍液可通過的孔徑’並貼合有厚10〜1000#m 之片狀過濾器20。板狀多孔質保持體22 ’除了形狀爲板狀 外係和環狀多孔質保持體19相同° 又，作爲本發明6之導電性微粒子製造裝置之其他實 施形態，如圖12所示般，在配置於底板10的上面周部的 環狀多孔保持體19和接觸環11間’配設可使得處理室13 的底面全體形成濾過面之片狀過濾器20，將處理室U內 以片狀過濾器20隔開。 可藉由本發明1 ' 2、3、4、5、6的導電性微粒子製 造裝置製造出之導電性微粒子的鑛層材料，沒有特別的限 制，可舉金、銀、銅、鉑、鋅、鐵、錫、鋁、鈷、銦 '鎳 '鉻 '鈦 '銻 '鉍 '鍺 '鎘 '矽等爲例。其等可單獨地使 用，也可以倂用2種以上。 (請先閱讀背面之注意事項再填本頁) ,1Τ 序 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ297公处） 459072 A7 B7 經濟部中央標準局負工消费合作社印焚 五、發明説明ft ϋ ) 本發明1、2、3、4、5、6的導電性微粒子製造裝置 中所用之微粒子，係有機樹脂微粒子或無機微粒子皆可β 上述微粒子，粒徑爲〇.5~500〇em，且其變動係數宜 爲50%以下。 本發明7、8、9中，係藉由鍍敷步驟以於微粒子表面 形成電鍍層。特別是較佳爲，於配設有陽極與陰極之鍍浴 中，藉由基於藥全里里粒.子攆...擊陰摄的鍍敷步驟，而於 上述微粒子的表面形成電鍍層。 本發明7、8、9中，爲了把上述鍍敷步驟中所生成的 微粒子凝集塊分散、粉碎、單粒子化，係包含用以賦予擇 自剪切力、衝擊力、及壓力降低所構成群中之至少1種的 步驟。 .本發明7中，作爲賦予擇自上述剪切力、衝擊力、及 壓力降低所構成群中之至少1種的方法並沒有特別的限定 ’可舉使用靜力混合器、均質混合器、均化器、攪泮機、 泵、超音波等粉碎裝置之方法等爲例β上述壓力降低 (cavitation)係代表著，流動中的液體壓力局部降低，以發 生蒸氣或含有氣體的泡法之現象。 上述鍍敷步驟係使用電鍍裝置以進行之。 作爲上述電鍍裝置，並沒有特別的限定，較佳爲例如 圖1所示般’係具有：固定於垂直驅動軸的上端部之圓盤 狀底扳；配置於上述底板的外周上面之僅鍍液可通過之多 孔體；配置於上述多孔體上面之通電用的接觸環；中空罩 ’於上部中央具有開口部之圓錐台狀的罩之上端部接合孔 本紙张尺度適用㈣ϋ料碑（CNS〉糾德（2iGX 297 >>&"y "" I i ! 1 I : . . it * 訂 I - (請先閲讀背面之注意事項再#寫本頁) A7 459072 五、發明説明心！） 徑相同於開口徑之中空圓筒，該中空圓筒的上端部係朝中 空圖筒內壁側回折；形成於上述中空罩的外周部與前述底 板間之夾住上述多孔體和接觸環之可旋轉的處理室；將鍍 液從上述開口部供給至上述處理室之烘給管；用於接收從 上述多孔體的孔飛散出的鍍液之容器；用以排出儲留於上 述容器中的銨液之排出管；從上述開口部***之接觸鑛液 用的電極。 本發明7、8、9中，藉由上述電鍍裝置和上述粉碎裝 置的組合，可將鍍敷步驟中生成的微粒子凝集塊分散、粉 碎、單粒子化，以於一粒一粒的微粒子表面形成均一的電 鍍層。 上述電鍍裝置和上述粉碎裝置之組合方法，例如，於 上述電鍍裝置中完成鍍敷步驟後，使用粉碎裝置以單粒子 化。此時，經鍍敷的微粒子表面會殘留傷痕、剝離痕，不 易形成均一的鍍層。因此較佳爲，一面以電鍍裝置形成鍍 層筇連續地藉由粉碎裝置以進行單粒子化。又，在成爲目 的膜厚前令微粒子循環以進行鎪敷亦可，將電鍍裝置和粉 碎裝置串接而在一路徑下進行鑛敷亦可。 本發明7、8、9中，導電性微粒子的電鍍層並沒有特 別的限定’較佳爲擇自金、銀、銅、鉑、鋅、鐵、錫、鋁 '鈷'銦'鎳、鉻、鈦、銻、鉍、鍺、鎘'矽所構成群中 之至少一種金屬所構成。 本發明7、8、9中所用的微粒子，可以是有機樹脂微 粒子也可以是無機微粒子。 _—--—___ ^4______________ _張尺度適用中國國家榡準（CNS ) Λ4规枱（2Ι0Χ2Μ公^ ) ^裝------ΐτ------1 (請先閲讀背面之注意事項再壤為本頁) 經濟部中央標率扃負工消费合作社印掣 經濟部中央標隼局貞工消资合作社印製 4^9〇72 A7 -- B7 _ ___ _ ___· 五、發明説明（3^) 上述微粒子之粒徑爲0.5〜5000vm，且其變動係數茸 爲50%以下a 藉由本發明7、8、9的導電性微粒子製造方法，可獲 .得以下的效果。 φ藉由含有可賦予擇自剪切力、衝擊力、壓力減低所構成 群中之至少一種的步驟，即使在使用粒徑約lOOjf/m以下 的微粒子之情形，也可以得出經單粒子化而具有均一鍍層 厚之導電性微粒子。 ②將電鍍裝置和粉碎裝置串接，一面以電鍍裝置形成鍍餍 並連續地藉粉碎裝置以單粒子化，藉此可獲得鍍敷表面無 剝離痕或傷痕並具有均一的鍍層厚之導電性微粒子β 以下參照圖面以說明本發明1〇的導電性微粒子製造 裝置之一實施形態** 圖1係顯示本發明10的導電性微粒子製造裝置中所 用的電鍍裝置之一實施形態。圖I5係顯示本發明10的導 電性微粒子製造裝置中電鍍裝置和粉碎裝置組合後的循環 方式之一實施形態。 如圖1所示般，本發明10的導電性微粒子製造裝置 中所用之電鍍裝置，係具有：固定於垂直驅動軸3的上端 部之圓盤狀底板10;配置於上述底板1〇的外周上面之僅 鍍液可通過之多孔體12:配置於上述多孔體上面之通電用 的接觸環11 ;中空罩1，於上部中央具有開口部8之圓錐 台狀的罩之上端部接合孔徑相同於開口徑之中空圓筒，該 中空圓筒的上端部係朝中空圓筒內壁側回折；形成於上述 ____ Τΐ ____ 本紙張尺度適用中國國家標隼{ CNS ) /\4规枋（21〇Χ2<Π公;^ > ---------^裝：------1Τ------Μ (讀先閱讀背面之注意事項再域寫本頁) A7 459072 五、發明説明（q) 中空罩1的外周部與底板10間之夾住上述多孔體12與接 觸環11之可旋轉的處理室13 ;將鍍液從上述開口部8洪 給至上述處理室13之供給管6 ;用於接收從上述多孔體12 的孔飛散出的鍍液之容器4 ;用以排出儲留於上述容器4 中的鍍液之排出管7;從上述開口部8***之接觸鍍液用 的電極2。 上述多孔體12係塑膠或陶瓷所形成之具有連通氣泡 的過濾器狀多孔體，所採用的孔徑係使鍍液等處理液可通 過、微粒子及導電性微粒子無法通過。 處理液係藉由驅動軸3的旋轉承受離心力以通過多孔 體12，由於會飛散至塑膠容器4內故處理室內13的鍍液 液面會降低，藉由鍍液供給用的供給管6以將來自開口部 8之鍍液供給至處理室13，使用位準感應器5以將液量控 制成處理室內13的液面經常和電極2a形成接觸狀態圖 1中，2代表正電極而連接於上述陽極2a » 9代表接觸電刷 〇電極用電源未圖示出。 本發明10中，係將鍍液從鍍液供給管6洪給至處理 室內13，接著，從中空罩1的開口部8將形成有導電基底 層之微粒子投入處理室13內以使其分散。該導電性基底層 之形成，宜使用無電解鍍敷法，並非以此爲限而可藉由其 他周知的導電性賦予方法以形成出。將微粒子置入處理室 13內時’驅動軸3已開始旋轉。鍍液會隨著驅動軸3的旋 轉通過多孔體12向處理室13的外部流出，其減少量是經 由鍍液供給管6加以補給。其他鍍敷條件和通常的鍍敷時 ________3^____ 本紙张尺度適用中國國家標嗥（CNS ) Λ4ΚΜ 210X297公兑一 ---------^裝------1T------Μ (請先閲讀背面之注意事項再域寫本頁) 經濟部中央標準局貝工消費合作社印¾ 經濟部中央標參局負工消费合作社印製 4 5 9 ο 7 2 Μ Β7 ___ —- — __ 一 "_丨 五、發明説明 相同。 爲了形成更均一的鍍層，較佳爲，將驅動軸3的旋轉 方向每隔一定時間逆轉或使其停止。 本發明10之處理室13中，形成有導電性基底層的微 粒子係浸漬於鍍液中，在驅動軸3旋轉下於接觸環11(陰極 )及陽極2a的兩電極間通電。該微粒子會因離心力的作用 壓接於接觸環U，而於面向陽極2a的微粒子上形成鍍層 。若停止驅動軸3，該微粒子會因重力的作用和鍍液的慣 性而被拉入液流中，流落至底板中央部的平坦面’混合之 。接著若處理室開始逆旋轉，於混合下以其他姿勢藉離心 力的作用壓接於接觸環11，藉此以於面向陽極2a的其他 微粒子上形成鍍層。 .鍍敷步驟係藉由反覆如此般之驅動軸3的旋轉和停止 以進行，又如圖15所示般，於該鍍敷步驟中將處理室13 內的該微粒子隨著鍍液一起連續地取出而送至粉碎裝置。 被送至粉碎裝置之微粒子係在被賦予擇自剪切力、衝擊力 、壓力降低所構成群中之至少1種力下解碎成單粒子，再 返回電鍍裝置的處理室內。 藉由重覆道些操作，可防止微粒子的凝集，而得出形 成有均一電鍍層之導電性微粒子。 圖19係顯示本發明U的導電性微粒子製造裝置之一 實施形態。 本發明11的導電性微粒子製造裝置中所用之電鍍裝 置，係具有：固定於垂直驅動軸3的上端部之圓盤狀底板 衣 .tT被 1} ' C請先Μ讀背而之注意事項再功寫本頁) 本紙依尺度適用中國國家標準（CNS )以规枯（21 0X29·/公沿） ^5^072' 經濟部中央標率局貝Η消f合作社印¾ Α7 87 五、發明説明（二<Γ) 10 ;配置於上述底板ίο的外周上面之僅镀液可通過之多孔 體12 :配置於上述多孔體上面之通電用的接觸環11 ·’於上 部中央具有開口部8之中空罩1 ;形成於上述中空罩1的 外周部與底板10間之夾住上述多孔體12與揍觸環11之可 旋轉的鍍槽313 ;於上述鍍槽313內，藉甶僅鍍液可通過 的隔板3Μ所隔出之包含上述接觸環11的內側面之處理室 315 ;將鍍液從上述開口部8供給至上述鍍槽之供給管 6 ;用於接收從上述多孔體12的孔飛散出的鍍液之容器4 ;用以排出儲留於上述容器4中的鍍液之排出管7 ;從上 述開口部8***之接觸鍍液用的電極2 〇 ' 鍍液係藉由驅動軸3的旋轉承受離心力以通過多孔體 12而飛散至容器4內^因此，由於鍍槽313內的鍍液液面 會降低，爲補充鍍液係藉由鍍液供給用的供給管6以將來 自開口部8之鍍液供給至鍍槽313，並使用位準感應器5 以將液量控制成處理室內Π的液面經常和電極2a形成接 觸狀態。圖19中，2代表正電極而連接於上述陽極2a 〇 9 代表接觸電刷。電極用電源未圖示出β 本發明11中，將微粒子投入處理室315，並將鍍液由 供給管6供給至鍍槽313內。鍍液會隨著驅動軸3的旋轉 而_過多孔體12朝鑛槽313的外部飛出，其減少量係從供 給管6加以補給。其他鍍敷條件是和通常的鍍敷時相同。 爲形成更均一的鍍層，較佳爲，將驅動軸3的旋轉方 向每隔一定時間逆轉或使其停止. 微粒子係藉由基於鍍槽313的旋轉之離心力的作用而 本_________ ^4用中圇國家標準（CNS ) Μ规枱（210><297公祐 ---------------1Τ------妹 {請先閱讀背面之注意亊項再填寫本頁) 459072 經濟部中央標嗥局员工消费合作社印5i A7 B7 五、發明説明（二· 在壓接於接觸環11的狀態下被通電鍍敷。在停止通電時旋 轉會減速、停止’微粒子會因重力和鍍液之慣性被拉入液 流中，並朝底板10的中央部方向移動，但由於會被藉由僅 處理液可通過之隔板314所隔開之處理室315擋到，故會 衝撞處理室315的內壁而產生激烈地混合 接著若鍍槽 313旋轉’微粒子會在和鍍液混合下以其他姿勢壓接於接 觸環而被鑛敷。藉由重覆此循環，即可使得存在於處理室 315中之所有的微粒子上形成均一厚的鍍層。 如此般，於本發明的導電性微粒子製造裝置中，微粒 子僅在形成於鍍槽313中之處理室315內移動。因此，可 縮短微粒子的移動距離，而縮短微粒子被壓接在接觸環11 上所需的時間，故可提高鍍敷效率。又，於鍍槽313的旋 轉停止時，微粒子會衝撞處理室315的內壁而進行混合， 故具有優異的攪拌效果。 處理室315的大小，需考慮微粒子的粒徑、鍍敷金屬 的種類等而適當選擇之，但較佳爲，使得圖19中之Α所 示的接觸環11內側面到對面的隔板314內側面間的距離( 粒子移動距離)比微粒子在被壓接於接觸環11的狀態下之 微粒子層厚大，又比圖19之B所示的從接觸環11內側面 到鑛槽313中央部之作爲陽極而***之電極2a外周面間的 距離(於鍍槽313內未形成處理室315時之粒子移動距離) 小〇 作爲處理室315形成用之隔板314，只要是僅鍍液可 通過者即可，對其形狀或材質沒有特別的限定，但較佳爲 本紙張尺度適用中國國家標孪（eNS )八4丨見彳Μ 210X29·?公' 一. ---------^------IT------^ (請先M讀背面之注意事項再填贫.本頁) 459072 A7 B7 五、發明説明Π% ，於設有多數個穿孔之樹脂板內側面上貼附具有僅處理液 可通過、微粒子無法通過的孔徑之薄過濾板者。上述穿孔 的形狀及大小和投入處理室315中之微粒子的粒徑無關， 只要鍍液可順暢地通過即可。又，上述樹脂板的板厚沒有 特別的限定，只要可確保形成處理室315所需的強度即可 〇 本發明11的導電性微粒子製造裝置中所用之微粒子 ，可以是有機樹脂微粒子也可以是無機微粒子。上述微粒 子以形成有導電性基底層者較佳β上述導電性基底層之形 成方法，較佳爲無電解鍍敷法，但並非以此爲限而可使用 其他周知的導電性賦予方法以形成出。 上述有機樹脂微粒子，可以是直鏈狀聚合物構成的微 粒子，也可以是網狀聚合物構成的微粒子，可以是熱硬化 性樹脂微粒子’也可以是彈性體構成的微粒子。 上述直鏈狀聚合物沒有特別的限定，可舉尼龍、聚乙 烯、聚丙烯、甲基戊烯聚合物、聚苯乙烯、聚甲基丙烯酸 甲酯、聚氯乙烯'聚氟乙烯、聚四氟乙烯、聚對苯二甲酸 乙二醇酯、聚對苯二甲酸丁二醇酯.、聚磺酸酯、聚碳酸酯 、聚丙嫌晴、聚縮酸 '聚酿胺等爲例。 作爲上述網狀聚合物沒有特別的限定，可舉二乙烯苯 、六甲苯、二乙烯醚、二乙_、烯丙基甲醇、烷撐二丙 烯酸酯、寡或聚(烷撐二醇)二丙烯酸酯、寡或聚(烷撐二醇） 二甲基丙烯酸酯、烷撐三丙烯酸酯、烷撐三甲基丙烯酸酯 、烷撐四丙烯酸酯、烷撐四甲基丙烯酸酯、烷撐二丙烯醯 本用中國國家標隼（CNS ) Λ4ϋ - (請先IMS讀背面之注意事項再填寫本頁) 訂 煉.11T 459072 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs " Α7 Β7 V. Description of the invention (1) The problem of the generation of ring aggregates. The conductive fine particle manufacturing apparatus of the sixth aspect of the present invention has a porous body having a pore size through which only a plating solution can pass on the upper surface of the disc-shaped porous support body, and a plate having a thickness of 10 to 100 #m is bonded. Filter. Except for this, the structure is the same as the conductive fine particle manufacturing apparatus of the fourth aspect of the present invention or the conductive fine particle manufacturing apparatus of the fifth aspect of the present invention. In the sixth aspect of the present invention, by using such a porous body, the clogging of particles and the outflow of β can be prevented more effectively without reducing the liquid throughput. Fig. 11 shows an embodiment of the conductive fine particle manufacturing apparatus of the sixth aspect of the present invention. The porous body used in this embodiment has a sheet-like filter 20 having a thickness of 10 to 1000 #m on the upper surface of the plate-like porous holding body 22 and having a pore diameter through which only a plating solution can pass. The plate-shaped porous holding body 22 ′ is the same as the ring-shaped porous holding body 19 except that the shape is plate-shaped. As another embodiment of the conductive fine particle manufacturing apparatus of the present invention 6, as shown in FIG. 12, A sheet-like filter 20 is disposed between the annular porous holder 19 and the contact ring 11 disposed on the upper periphery of the bottom plate 10 so that the entire bottom surface of the processing chamber 13 forms a filtering surface, and the processing chamber U is filtered in a sheet shape. The device 20 is separated. There are no particular restrictions on the mineral layer material of the conductive fine particles that can be produced by the conductive fine particle manufacturing apparatus of the present invention 1'2, 3, 4, 5, 6 and the like. Examples include gold, silver, copper, platinum, zinc, and iron. , Tin, aluminum, cobalt, indium 'nickel' chromium 'titanium' antimony 'bismuth' germanium 'cadmium' silicon and the like. These may be used alone or in combination of two or more. (Please read the precautions on the back before filling this page), 1T preface paper size is applicable to Chinese National Standard (CNS) Λ4 specification (210 × 297 public office) 459072 A7 B7 Printing by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Explanation ft)) The fine particles used in the conductive fine particle manufacturing device of the present invention 1, 2, 3, 4, 5, 6 of the present invention can be either organic resin fine particles or inorganic fine particles. Β The fine particles have a particle size of 0.5 to 500. em, and its coefficient of variation should be less than 50%. In the inventions 7, 8, and 9, the plating layer is formed on the surface of the fine particles by a plating step. In particular, it is preferable to form a plating layer on the surface of the fine particles in a plating bath provided with an anode and a cathode, by a plating step based on the whole grain, the grains, and the like. In the inventions 7, 8, and 9, in order to disperse, pulverize, and singulate the agglomerates of fine particles generated in the above-mentioned plating step, the group includes a group for imparting selective shear force, impact force, and pressure reduction. At least one of these steps. In the seventh aspect of the present invention, the method for imparting at least one selected from the group consisting of the shear force, impact force, and pressure reduction is not particularly limited. A static mixer, a homomixer, and a homogenizer may be used. Methods such as pulverizers such as carburetor, stirrer, pump, ultrasonic, etc. are used as an example. Β The above-mentioned pressure reduction (cavitation) represents that the pressure of the liquid in the flow is locally reduced to cause the phenomenon of steam or bubble containing gas. The above-mentioned plating step is performed using a plating apparatus. The above-mentioned electroplating device is not particularly limited, but it is preferable to have a disc-shaped bottom plate fixed to the upper end portion of the vertical drive shaft as shown in FIG. 1; and only a plating solution disposed on the outer periphery of the bottom plate. A porous body that can pass through; a contact ring for energization disposed on the above porous body; a hollow cover 'on the upper part of the conical truncated cover with an opening in the upper center, a joint hole at the end of the paper. Germany (2iGX 297 > > & " y " " I i! 1 I:.. It * Order I-(Please read the notes on the back before #writing this page) A7 459072 V. Description of the invention Heart!) A hollow cylinder with the same diameter as the opening diameter, the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow figure cylinder; the porous body formed between the outer peripheral portion of the hollow cover and the bottom plate is contacted with A rotatable processing chamber; a baking tube for supplying the plating solution from the opening to the processing chamber; a container for receiving the plating solution scattered from the holes of the porous body; and a container for discharging the liquid stored in the container Discharge tube of ammonium solution in The electrode for contacting the mineral liquid inserted in the opening. In the inventions 7, 8, and 9, the combination of the electroplating device and the pulverizing device can disperse, pulverize, and singulate fine particles aggregated in the plating step. To form a uniform electroplated layer on the surface of each particle. The method of combining the electroplating device and the pulverizing device, for example, after completing the plating step in the electroplating device, using a pulverizing device to separate particles. In this case, flaws and peeling marks remain on the surface of the plated particles, and it is difficult to form a uniform plating layer. Therefore, it is preferable that the plating layer is formed by a plating device, and the particles are continuously singulated by a pulverizing device. It is also possible to circulate the fine particles for deposition before the film thickness, or connect the electroplating device and the pulverizing device in series to perform mineral deposition in one path. In the invention 7, 8, and 9, the electroplated layer of the conductive fine particles is not particularly The definition of 'is preferably selected from the group consisting of gold, silver, copper, platinum, zinc, iron, tin, aluminum' cobalt ', indium, nickel, chromium, titanium, antimony, bismuth, germanium, and cadmium. It is composed of at least one metal. The microparticles used in the inventions 7, 8, and 9 of the present invention may be organic resin microparticles or inorganic microparticles. _——————___ ^ 4 ______________ _ Zhang scale is applicable to China National Standards (CNS) Λ4 regulations Taiwan (2Ι0 × 2Μ) ^ ---------- ΐτ ------ 1 (Please read the notes on the back first and then this page is the page) Ministry of Economy Printed by the Central Standards Bureau, Zhenggong Consumer Cooperative, 4 ^ 9〇72 A7-B7 _ ___ _ ___ · V. Description of the invention (3 ^) The particle size of the above microparticles is 0.5 ~ 5000vm, and its coefficient of variation is 50. % Or less a The following effects can be obtained by the method for producing conductive fine particles of 7, 8, and 9 of the present invention. By including at least one step selected from the group consisting of shear force, impact force, and pressure reduction, even when using particles having a particle size of about 100 jf / m or less, a single particle can be obtained. On the other hand, it has conductive fine particles with uniform coating thickness. ② The electroplating device and the pulverizing device are connected in series. One side of the electroplating device is used to form a plated plate, and the pulverizing device is continuously used to form a single particle. Thereby, the conductive surface particles having a uniform plating thickness without peeling or scratches can be obtained on the plating surface. β Hereinafter, one embodiment of the conductive fine particle manufacturing apparatus of the present invention 10 will be described with reference to the drawings. FIG. 1 shows one embodiment of the electroplating apparatus used in the conductive fine particle manufacturing apparatus of the present invention 10. Fig. I5 shows an embodiment of a circulation system in which the electroplating device and the pulverizing device are combined in the electroconductive fine particle manufacturing device of the invention 10; As shown in FIG. 1, the electroplating device used in the conductive fine particle manufacturing device of the present invention 10 includes a disk-shaped base plate 10 fixed to the upper end portion of the vertical drive shaft 3, and is disposed on the outer periphery of the base plate 10. The porous body 12 through which only the plating solution can pass: the contact ring 11 for energization arranged on the above porous body; the hollow cover 1, the joint hole diameter at the upper end of the frustum-shaped cover with the opening 8 in the upper center is the same as the opening A hollow cylinder of caliber. The upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; it is formed in the above ____ Τΐ ____ This paper size applies to the Chinese national standard {CNS) / \ 44 (21〇 × 2 < Π 公; ^ > --------- ^ Pack: ----- 1T ------ M (Read the precautions on the back before writing this page on the field) A7 459072 5 2. Description of the invention (q) A rotatable processing chamber 13 sandwiching the porous body 12 and the contact ring 11 between the outer periphery of the hollow cover 1 and the bottom plate 10; flooding the plating solution from the opening 8 to the processing chamber 13 A supply pipe 6; a container 4 for receiving the plating solution scattered from the holes of the porous body 12; and a container 4 for discharging the liquid stored in the container 4 The plating solution discharge pipe 7 in the middle; the electrode 2 for contacting the plating solution inserted through the opening 8; the porous body 12 is a filter-like porous body formed of plastic or ceramics and having a connected bubble, and the pore size used is Process liquid such as plating solution can pass, and fine particles and conductive fine particles cannot pass. The process liquid is subjected to centrifugal force by the rotation of the drive shaft 3 to pass through the porous body 12, and will be scattered into the plastic container 4, so the plating solution in the processing chamber 13 The liquid level is lowered, and the plating liquid from the opening 8 is supplied to the processing chamber 13 through the supply pipe 6 for the plating liquid supply. The level sensor 5 is used to control the amount of liquid to the liquid level of the processing chamber 13. The electrode 2a is in contact state. In FIG. 1, 2 represents a positive electrode and is connected to the anode 2a »9 represents a contact brush. The power source for the electrode is not shown. In the present invention 10, the plating solution is supplied from the plating solution supply pipe 6 The particles are fed into the processing chamber 13 and then the particles having the conductive base layer formed therein are dispersed into the processing chamber 13 through the opening 8 of the hollow cover 1. The conductive base layer is formed by an electroless plating method, Not this For limitation, it can be formed by other well-known conductivity imparting methods. When the particles are placed in the processing chamber 13, the 'drive shaft 3 has started to rotate. The plating solution will pass through the porous body 12 to the process as the drive shaft 3 rotates. The external flow of the chamber 13 is reduced by replenishing it through the plating solution supply pipe 6. Other plating conditions and ordinary plating ________ 3 ^ ____ This paper size is applicable to the Chinese National Standard (CNS) Λ4KM 210X297 -------- ^ Installation ----- 1T ------ M (Please read the notes on the back before writing this page) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy ¾ Economy Printed by the Ministry of Standards and Technology Administration of the People's Republic of China Subsidiary and Consumption Cooperatives 4 5 9 ο 7 2 Μ Β7 ___ —- — __ 一 " _ V. The invention description is the same. In order to form a more uniform plating layer, it is preferable to reverse or stop the rotation direction of the drive shaft 3 at regular intervals. In the processing chamber 13 of the present invention 10, the microparticles having the conductive underlayer formed therein are immersed in a plating solution, and current is applied between the contact ring 11 (cathode) and the anode 2a while the drive shaft 3 rotates. The fine particles are crimped to the contact ring U by the centrifugal force, and a plating layer is formed on the fine particles facing the anode 2a. When the drive shaft 3 is stopped, the fine particles are drawn into the liquid flow due to the action of gravity and the inertia of the plating solution, and flow down to the flat surface 'of the central portion of the bottom plate to be mixed. Then, if the processing chamber starts to rotate in the reverse direction, the contact ring 11 is crimped by the centrifugal force in another posture under mixing, thereby forming a plating layer on the other fine particles facing the anode 2a. The plating step is performed by repeatedly rotating and stopping the drive shaft 3 in this manner, and as shown in FIG. 15, in the plating step, the particles in the processing chamber 13 are continuously continued along with the plating solution. Take it out and send it to the crushing device. The fine particles sent to the pulverizing device are pulverized into single particles under at least one force selected from the group consisting of shear force, impact force, and pressure reduction, and then returned to the processing chamber of the electroplating device. By repeating these operations, aggregation of the fine particles can be prevented, and conductive fine particles having a uniform plating layer can be obtained. Fig. 19 is a view showing one embodiment of a conductive fine particle manufacturing apparatus of U of the present invention. The electroplating device used in the electroconductive fine particle manufacturing device of the present invention 11 has a disc-shaped bottom coat fixed to the upper end portion of the vertical drive shaft 3. (This page is written on this page) This paper applies the Chinese National Standard (CNS) according to the standard to regulate the dead weight (21 0X29 · / common) ^ 5 ^ 072 'Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and printed by the cooperative ¾ Α7 87 5. Description of the invention (Two) 10; porous body arranged on the outer periphery of the above-mentioned bottom plate only through which the plating solution can pass 12: contact ring 11 for electric current arranged on the above-mentioned porous body Hollow cover 1; a rotatable plating tank 313 formed between the outer periphery of the hollow cover 1 and the bottom plate 10 to sandwich the porous body 12 and the contact ring 11; inside the plating tank 313, only a plating solution can be used. The processing chamber 315 containing the inside surface of the contact ring 11 separated by the passing partition 3M; the plating solution is supplied from the opening portion 8 to the supply pipe 6 of the plating tank; and is used to receive the hole from the porous body 12 Container 4 for scattered plating solution; used to discharge the plating solution stored in the above container 4 Outer tube 7; electrode 2 for contact with the plating solution inserted through the above-mentioned opening 8; the plating solution is subjected to centrifugal force by rotation of the drive shaft 3 to be scattered into the container 4 through the porous body 12; therefore, the plating tank 313 The level of the plating solution inside will be lowered. To supplement the plating solution, the supply solution 6 is used to supply the plating solution from the opening 8 to the plating tank 313, and the level sensor 5 is used to supply the amount of the solution. It is controlled so that the liquid surface of the processing chamber Π always comes into contact with the electrode 2a. In Fig. 19, 2 represents a positive electrode and is connected to the above-mentioned anode 2a. 09 represents a contact brush. The power source for an electrode is not shown. In the present invention 11, fine particles are charged into the processing chamber 315, and the plating solution is supplied from the supply pipe 6 into the plating tank 313. The plating solution will fly out of the pit 313 through the porous body 12 as the drive shaft 3 rotates, and the reduction will be replenished from the supply pipe 6. The other plating conditions are the same as those in ordinary plating. In order to form a more uniform coating, it is preferable to reverse or stop the rotation direction of the drive shaft 3 at regular intervals. The fine particles are used by the centrifugal force of the rotation of the plating tank 313.囵 National Standards (CNS) M Regulation Taiwan (210 > < 297 Gongyou --------------- 1Τ -------- Girl {Please read the note on the back before filling in This page) 459072 5i A7 B7 printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (2. It is electroplated in the state of being crimped to the contact ring 11. When the power is stopped, the rotation will slow down and stop the particles. It is drawn into the liquid flow due to gravity and the inertia of the plating solution, and moves toward the center of the bottom plate 10, but is blocked by the processing chamber 315 separated by the partition plate 314 through which only the processing solution can pass. Therefore, it will collide with the inner wall of the processing chamber 315 and cause intense mixing. Then, if the plating tank 313 rotates, the particles will be pressed against the contact ring and mixed with the plating solution in other positions to be deposited. By repeating this cycle, A uniform thick plating layer can be formed on all the fine particles existing in the processing chamber 315. For example, As such, in the conductive fine particle manufacturing apparatus of the present invention, the fine particles move only in the processing chamber 315 formed in the plating tank 313. Therefore, the moving distance of the fine particles can be shortened, and the fine particles are crimped on the contact ring 11 The required time can improve the plating efficiency. In addition, when the rotation of the plating tank 313 stops, the particles will collide with the inner wall of the processing chamber 315 and mix, so it has an excellent stirring effect. The size of the processing chamber 315 requires It is appropriately selected in consideration of the particle size of the fine particles, the type of the plating metal, and the like, but it is preferable that the distance between the inner surface of the contact ring 11 shown in A in FIG. 19 and the inner surface of the opposite spacer 314 (particle movement Distance) is larger than the thickness of the fine particle layer in a state where the fine particles are crimped to the contact ring 11, and is larger than the electrode 2a inserted as an anode from the inner side of the contact ring 11 to the center of the mine 313 as shown in FIG. 19B. The distance between the outer peripheral surfaces (particle moving distance when the processing chamber 315 is not formed in the plating tank 313) is small. As the partition plate 314 for forming the processing chamber 315, as long as only the plating solution can pass, the shape or No material Other restrictions, but preferably the paper size applies the Chinese National Standard (eNS) 8 4 丨 See 纸张 210X29 ·? 公 'I. --------- ^ ------ IT- ----- ^ (Please read the precautions on the back before filling in this page.) 459072 A7 B7 V. Description of the invention Π%, attached with only treatment liquid on the inside surface of the resin plate with a large number of perforations A thin filter plate with a pore size that can pass through and particles cannot pass through. The shape and size of the perforations have nothing to do with the particle size of the particles put into the processing chamber 315, as long as the plating solution can pass through smoothly. Also, the plate of the resin plate The thickness is not particularly limited as long as the strength required to form the processing chamber 315 is ensured. The fine particles used in the conductive fine particle manufacturing apparatus of the present invention 11 may be organic resin fine particles or inorganic fine particles. The fine particles are preferably formed with a conductive base layer. Β The method for forming the conductive base layer is preferably an electroless plating method, but it is not limited thereto, and other well-known conductivity imparting methods may be used to form the fine particles. . The organic resin fine particles may be fine particles made of a linear polymer, fine particles made of a network polymer, or fine particles made of a thermosetting resin 'or fine particles made of an elastomer. The linear polymer is not particularly limited, and examples thereof include nylon, polyethylene, polypropylene, methylpentene polymers, polystyrene, polymethyl methacrylate, polyvinyl chloride, polyfluoroethylene, and polytetrafluoro Examples are ethylene, polyethylene terephthalate, polybutylene terephthalate, polysulfonate, polycarbonate, polypropylene, polyacrylic acid, and poly (vinyl alcohol). The above-mentioned network polymer is not particularly limited, and examples thereof include divinylbenzene, hexamethylbenzene, divinyl ether, diethyl ether, allyl methanol, alkylene diacrylate, oligo or poly (alkylene glycol) diacrylic acid. Ester, oligo or poly (alkylene glycol) dimethacrylate, alkylene triacrylate, alkylene trimethacrylate, alkylene tetraacrylate, alkylene tetramethacrylate, alkylene dipropylene This book uses Chinese National Standards (CNS) Λ4ϋ-(Please read the notes on the back of IMS before filling this page).

經濟部中央標準局只工消舟合作社印S 459072 A7 B7 五、發明説明rrvh (請先閲讀背面之注意事項再填寫本頁) 胺等架橋反應性單體的均聚物，或這些架橋反應性單體和 其他聚合性單體的共聚物等爲例β其等中，最佳爲二乙烯 苯、六甲苯、二乙烯醚、二乙瑜風、烷撐三丙烯酸酯、烷 撐四丙烯酸酯等爲例。 作爲上述熱硬化性樹脂沒有特別的限制，可舉酚-甲醛 系樹脂、三聚氰胺-甲醛系樹脂、苯並鳥糞胺-甲醛系樹脂 、尿素-甲醛系樹脂、環氧系樹脂等爲例β 作爲上述彈性體沒有特別的限定，可舉天然橡膠、合 成橡膠等爲例。 作爲上述無機微粒子的材質沒有特別的限制，可舉二 氧化矽、氧化矽、氧化鐡、氧化鈷、氧化鋅、氧化鎳、氧 化錳、氧化鋁等爲例。 .上述微粒子的粒徑宜爲0.5〜5000 g m，更佳爲 0.5〜2500m，再更佳爲 1~1000 # m * ..煉 經濟部中夾標隼局男工消费合作社印製 上述微粒子的變動係數宜爲50%以下，更佳爲35%以 下，再更佳爲20%以下，最佳爲10%以下。又，所謂變動 係數，係以平均質作基準而將標準偏差以百分率表示，即 以次式來代表。 變動係數=(粒徑的標準偏差/粒徑的平均質）X 100(%) 本發明11的導電性微粒子製造裝置中所用之鍍敷金 屬沒有特別的限定，可舉金、銀、銅、鉑、鋅、鐵、錫、 鋁、鈷、銦、鎳、鉻 '鈦 '銻、鉍、鍺、鎘、矽等爲例。 其等可單獨地使用或倂用2種以上^ 本發明11的導電性微粒子製造裝置中，上述微粒子 ____ ^張尺度適用中國國家標準（CNS ) Λ4规梠（210 X 297公沿） 經濟部中央標丰局員工消費合作枉印製 4·5 9ΰ7Ζ Β7 五、發明説明（ν^) 的平均粒徑爲50#m以下時，或上述鍍敷金屬爲靜錫等易 凝集的物質時，可在上述微粒子中混合假鍍片之狀態下進 行鍍敷。 本發明12的導電性微粒子製造方法，係藉由鍍敷步 驟以於微粒子的表面形成鍍層。 本發明中，上述鍍敷步驟之進行所使用之導電性微粒 子製造裝置，係具有：於側面具陰極並具有可使鍍液通過 而排出的過濾部之可旋轉的處理室，以及設置成不與上述 處理室中的陰極接觸之陽極β 上述鍍敷步驟，係藉由反覆上述處理室的旋轉與停止 以進行之，係包含通電步驟和攪拌步驟。 上述通電步驟，係藉由在上述處理室等速旋轉的狀態 下通電，以於微粒子表面形成鍍層。投入上述處理室之微 粒子，係基於因上述處理室的旋轉之離心力效果以形成被 壓接於上述處理室的側面之陰極的狀態β藉由這種狀態下 的通電以於微粒子的表面形成鐽層。之後，將上述處理室 的旋轉及通電同時停止，亦即，一停止上述通電步驟，上 述微粒子將基於重力及鍍液之慣性而被拉入液流中，之後 流落到上述處理室的底部，混合之》 上述通電步驟或後述攪拌步驟結束後，若再度使上述 處理室旋轉以開始上述通電步驟，微粒子會在混合下以不 同於先前通電步驟的姿勢壓接於上述陰極。藉由這種狀態 下之進行通電以於上述微粒子的表面形成鍍層，結果可在 上述處理室中所有的微粒子上形成均一厚的鍍層β 本紙張尺度適用中國國家標隼（CNS ) Λ4規格（210X297公ΙΓί (請先閱讀背面之注意事項再填离本頁) Ή 經濟部中央標準局另工消费合作社印製 4 5 9 Ο 72 五、發明説明（_) 上述攪拌步驟，係藉由僅進行上述處理室的旋轉以攪 拌微粒子。上述攪拌步驟中不進行通電β 上述攪拌步驟中上述處理室的旋轉數，係配合微粒子 的凝集程度以適當選擇，和上述通電步驟中的旋轉數相同 也可以，不同也可以。又，上述攪拌步驟中上述處理室的 旋轉方向，可爲正逆方向中之任一者，爲提高攪拌效果’ 較佳爲和攪拌步驟前的步驟中之旋轉方向形成逆方向。 上述攪拌步驟之運轉形式，可和上述通電歩驟的運轉 形式相同，雖不同也可以，但爲提高效率及攪拌效果，較 佳爲時間儘可能短。 由於藉上述攪拌步驟可提高上述鍍敷步驟全體的攪拌 效果，結果可延長通電時間，又因爲即使通電時的電流密 度比習知高也可破壞所產生的凝集塊/故可於高效率下形 成均一的鑛層β 上述攪拌步驟宜爲在上述通電步驟後進行之，但也可 以在上述通電步驟進行複數次後再進行之。又在微粒子易 凝集時，在上述通電步驟後進行複數次的上述攪拌步驟亦 可。 本發明12的導電性微粒子製造裝置中所用之微粒子 ’可以是有機樹脂微粒子也可以是無機微粒子β上述微粒 子以形成有導電性基底層者較佳。上述導電性基底層之形 成方法’較佳爲無電解鍍敷法，但並非以此爲限而可使用 其他周知的導電性賦予方法以形成出。 上述有機樹脂微粒子，可以是直鏈狀聚合物構成的微 ----—_________43__：___ I張尺度適用中國國家橾準（CNS )以规梢（210X297公始） ---------------1Τ------, (#先閱请背面之注意事項*填寫本頁) 459072 經濟部中央標準局負工消费合作社印製 A7 --_________- 五、發明説明（年(） 一 粒子，也可以是網狀聚合物構成的微粒子，可以是熱硬化 性樹脂微粒子，也可以是彈性體構成的微粒子。 上述直鏈狀聚合物沒有特別的限定，可舉尼龍、聚乙 烯、聚丙烯、甲基戊烯聚合物、聚苯乙烯、聚甲基丙烯酸 .甲酯、聚氯乙烯、聚氟乙烯、聚四氟乙烯、聚對苯二甲酸 乙二醇醋、聚尉苯二甲酸丁二醇醋、㈣酸酯 '聚碳酸醋 、聚丙烯腈' 聚縮醛、聚醯胺等爲例。 作爲上述網狀聚合物沒有特別的限定，可舉二乙烯苯 、六甲苯、二乙烯醚、二乙燦楓、烯丙基甲醇、烷撐二丙 烯酸黯、寡或聚(焼撐—酵)二丙嫌酸酯、寡或聚(院擦二醇) 二甲基丙烯酸酯、烷撐三丙烯酸酯、烷撐三甲基丙烯酸酯 、烷撐四丙烯酸酯、烷撐四甲基丙烯酸酯、烷撐二丙烯醯 胺等架橋反應性單體的均聚物，或這些架橋反應性單體和 其他聚合性單體的共聚物等爲例β其等中，愚彳丰爲„7杨 苯、六甲苯、二乙趣、二乙麵、焼擦三觸== 撐四丙烯酸酯等爲例。 作爲上述熱硬化性樹脂沒有特別的限制，可舉酌-甲酸 系樹脂、三聚氰胺-甲醛系樹脂、苯並鳥糞胺-甲醛系樹脂 、尿素-甲醛系樹脂、環氧系樹脂等爲例。 作爲上述彈性體沒有特別的限定，可舉天然祿膠、合 成橡膠等爲例。 "^ ^ 作爲上述無機微粒子的材質沒有特別的限制，可舉— 氧化矽、氧化矽、氧化鐵、氧化鈷、氧化鋅、氧化鐘、 化錳、氧化鋁等爲例。 請先閲讀背面之注意事項再填耗本頁) —裝. -V)· 訂 腺. 本紙张尺度適用中國國家標準CNS〉Μ規梠（210X 297公犛） 459072 A7 B7 五、發明説明（fv) 上述微粒子的粒徑宜爲化5〜5000 M m，更佳爲 〇-5~250〇以111，再更佳爲1~1〇〇〇#111。 上述微粒子的變動係數宜爲50%以下，更佳爲35%以 下，再更佳爲20%以下，最佳爲10%以下。又，所謂變動 係數，係以平均質作基準而將標準偏差以百分率表示’即 以次式來代表。 變動係數气粒徑的標準偏差/粒徑的平均質）X 1〇〇(%) 本發明12的導電性微粒子製造裝置中所用之鍍敷金 屬沒有特別的限定，可舉金、銀、銅、鉑 '鋅 '鐵、錫、 鋁'鈷、銦、鎳、鉻、鈦、銻、鉍、鍺、鎘、矽等爲例。 其等可單獨地使用或併用2種以上。 以下，參照圖面以說明本發明12 ‘的導電性微粒子製 造方法之一實施形態^ 圖11係顯示本發明的導電性微粒子製造方法中適於 使用的導電性微粒子製造裝置之一例。 圖u所示之導電性微粒子製造裝置，係具有：固定 於垂直驅動軸的上端部之圓盤狀底板10;配置於上述底板 10的外周上面之僅鍍液可通過之多孔體21 ;配置於上述多 孔體21上面之通電用的接觸環η ;於上部中央具有開口 部8之中空罩1 ;形成於上述中空罩1的外周部與底板10 間之夾住上述多孔體21與接觸環11之可旋轉的處理室13 ;將鑛液從上述開口部8供給至上述處理室13之供給管6 ;用於接收從上述多孔體12的孔飛散出的鍍液之容器4 ; 用以排出儲留於上述容器4中的鍍液之排出管7 ;從上述 -----------45^·^___ 、張尺度適用中國國家標準（CRS ) Λ4说枱（210X29?^!^ 一 --— (諳先閱讀背面之注意事項存填寫本頁) 订 痒， 經濟部中央標準局®Κ：工消费合作枉印製 459072 經濟部中央標準扃負工消费合作社印製 A7 五、發明説明（Lf>) 開口部8***之接觸鍍液用的電極2。又，在這種構造的 導電性微粒子製造裝置中，接觸環II即陰極，多孔體21 即過濾部，電極2即陽極。 鍍液係藉由驅動軸3的旋轉承受離心力而通過多孔體 21，由於處理室13內的鍍液液面會降低，爲補充鍍液係藉 由鍍液洪給用的供給管6以將來自開口部8之鍍液供給至 處理室13，並使用位準感應器5以將液量控制成處理室內 13的液面經常和電極2a形成接觸狀態。圖11中，2代表 正電極而連接於上述陽極2a。9代表接觸電刷。電極用電 源未圖示出。 本實施形態中，將鍍液由烘給管6供給至處理室13 內，接著從中空罩1的開口部8將形成有導電基底層之微 粒子投入並分散於處理室13中。鍍液會隨著驅動軸3的旋 轉而通過多孔體12朝處理室13的外部飛出，其減少量係 從供給管6加以補給。其他鍍敷條件是和通常的鍍敷時相 同。 上述多孔體21係塑膠或陶瓷所形成之具有連通氣泡 的過濾器狀多孔體，所採用的孔徑係使鍍液等處理液可通 過、微粒子及導電性微粒子無法通過，又較佳爲，於板狀 多質保持體22的上面配置具有僅鍍液可通過的孔徑之過'濾 片20。 爲形成更均一的鍍層，較佳爲，將驅動軸3的旋轉方 向每隔一定時間逆轉或使其停止。旋轉數及運轉的形式， 正轉及逆轉時係相同或不同皆可。 -άά____ ^張尺度適用中國國家標準（CNS ) Λ4坭格（2!0Χ2们公《 ) (請先間讀背面之注意事項再路鸡本頁) 、1Τ 烺. 45 9〇 經濟部中央標準局負工消费合作社印製 Α7 Β7 五、發明説明（44) 本發明13之導電性微粒子製造方法是藉由鍍敷步驟 以於微粒子的表面形成電鍍層° 本發明13中所使用之導電性微粒子製造裝置，係具 有：於側面具陰極並具有可使鍍液通過而排出的過濾部之 可旋轉的處理室，以及設寘成不與上述處理室中的陰極接 觸之陽極。 投入上述處理室之微粒子，係基於因上述處理室的旋 轉之離心力效果以彤成被懕接於上述處理室的側面之陰極 的狀態《藉由這種狀態下的通電以於微粒子的表面形成鍍 層。之後，將上述處理室的旋轉及通電同時停止’亦即， 一停止上述通電步驟，上述微粒子將基於重力及鍍液之慣 性而被拉入液流中，之後流落到上述處理室的底部，混合 之◊若再度使上述處理室旋轉以開始上述通電步驟’微粒 子會在混合下以不同於先前通電步驟的姿勢壓接於上述陰 極。藉由這種狀態下之進行通電以於上述微粒子的表面形 成鍍層，結果可在上述處理室中所有的微粒子上形成均一 厚的鍍層。 本發明13所用之微粒子沒有特別的限定，可舉金屬 微粒子、有機樹脂微粒子、無機微粒子等爲例。使用上述 有機樹脂微粒子或無機樹脂微粒子時，以形成有導電性基 底層者較佳。上述導電性基底層之形成方法，較佳爲無電 解鍍敷法，但並非以此爲限而可使甩其他周知的導電性賦 予方法以形成出。 作爲上述金屬微粒子沒有特別的限定，可舉鐵、銅、 —---------—---4^-------------—-— ,張又度適用中國國家柢孪（CNS ) Λ4規梠（2]OX2m>^ ) (锖先M讀背面之注意事項再填，¾本頁) 序 459072 A7 B7 五、發明説明（(^Γ) 經濟部中央標苹局負工消f合作社印^ 銀、金、錫、鉛、銷、鏡、駄、銘、絡、銘、鲜、鶴、其 等的合金等爲例。 上述有機樹脂微粒子沒有特別的限定，可舉直鏈狀聚 合物構成的微粒子、網狀聚合物構成的微粒子、熱硬化性 樹脂微粒子、彈性體構成的微粒子等爲例。 上述直鏈狀聚合物沒有特別的限定，可舉尼龍、聚乙 烯、聚丙烯、甲基戊烯聚合物、聚苯乙烯、聚甲基丙烯酸 甲酯、聚氯乙烯、聚氟乙烯、聚四氟乙烯、聚對苯二甲酸 乙二醇酯、聚對苯二曱酸丁二醇酯、聚磺酸酯、聚碳酸酯 、聚丙烯腈、聚縮醛、聚醯胺等爲例。 作爲上述網狀聚合物沒有特別的限定，可舉二乙烯苯 、六甲苯、二乙烯醚、二乙嫌楓、烯丙基甲醇、烷撐二丙 烯酸酯、寡或聚(烷撐二醇)二丙烯酸酯、寡或聚(烷撐二醇） 二甲基丙烯酸酯 '烷撐三丙烯酸酯、烷撐三甲基丙烯酸酯 、烷撐四丙烯酸酯、烷撐四甲基丙烯酸酯、烷撐二丙烯醯 胺等架橋反應性單體的均聚物，或這些架橋反應性單體和 苯、六甲苯、二乙烯醚、二乙偷風、烷撐三丙烯酸酯、烷 撐四丙烯酸酯等爲例β 作爲上述熱硬化性樹脂沒有特別的限制，可舉酚-甲醛 系樹脂、三聚氰胺-甲醛系樹脂、苯並鳥糞胺-甲醛系樹脂 、尿素-甲醛系樹脂、環氧系樹脂等爲例。 作爲上述彈性體沒有特別的限定，可舉天然橡膠、合 成橡膠等爲例。 (請先閱讀背而之注意事項再填寫本頁) -裝 丁 -° 一 本紙張尺度適用中國國家標準（CNS ) AUJiL#, ( 210·Χ 297公垃.） ^5 9 0 72 A7 五、發明説明（冬〇 經濟部中央標準局員工消费合作杜印製 作爲上述無機微粒子的材質沒有特別的限制，可舉二 氧化矽、氧化矽、氧化鐵、氧化鈷、氧化鋅、氧化鎳、氧 化錳、氧化鋁等爲例。 上述微粒子的粒徑宜爲0.5-5000 // m，更佳爲 0.5〜250〇em，再更佳爲1〜H)00#m。又，上述微粒子的變 動係數宜爲50%以下，更佳爲35%以下，再更佳爲20%以 下，最佳爲10%以下。又，所謂變動係數，係以平均質作 基準而將標準偏差以百分率表示，即以次式來代表。 變動係數=(粒徑的標準偏差/粒徑的平均質）Χ 1〇〇(%) 本發明Π中，上述微粒子和上述鍍液的比重差爲 0.04〜22.00。若未滿0.04，微粒子必須花費相當的時間才 能接觸陰極，由於通電是在所有的微粒子形成被壓接於陰 極的狀態前就開始，故會產生雙極現象。又，若提高處理 室的旋轉數雖可加快微粒子的移動速度，但由於基於離心 力的作用而承受朝外周方向的力之鍍液會在處理室內形成 研缽狀的旋渦，會使得配置於處理室中央之電極露出，而 造成電流無法流通。 若微粒子要和陰極接觸所需的移動時間過長，1循環 中的通電時間比例會變少，不僅效率會變低，同時因處理 室的長時間旋轉，液面會形成硏缽狀的旋而使得通電量變 得極低。 另一方面，一般所知的固體物質比動約爲0.5〜23左右 ，本發明中之製造方法，若微粒子和鍍液的比重差越大則 鍍液中微粒子越容易移動，故效果極佳。 ---------1------1T------0 (請先閱讀背面之注意事項再續爲本頁) 才、紙張尺度適用中國國家標準（CNS ) Λ4规梢（2IOX 297公尕 459072 Α7 Β7 經濟部中央標毕局男工消费合作社印製 五、發明説明（&0) 亦即，可鑛敷的比重差之範圍爲0.04〜22.00。較佳爲 0.04〜11.00，更佳爲 〇.〇4〜0·2。 使上述微粒子和鍍液的比重差在上述範圔內的方法有 將微粒子的比重增大的方法和將鍍液的比重減小的方法。 上述將微粒子的比重增大的方法，例如作爲上述微粒 子是使用上述有機樹脂微粒子或無機樹脂微粒子時，將形 成於上述微粒子的表面之導電基底層的膜厚增大之方法等 <具體而言’例如’對比重Μ9的有機樹脂微粒子施予無 電解鍍鎳(比重8.85)時’如圖1所示般，伴隨鍍膜厚的增 大，微粒子的比重會增大。如此般，藉由於上述微粒子的 表面形成無電解鍍敷等導電基底層等，即可任意地控制上 述微粒子的比重^> .上述將鍍液的比重減小的方法，係例如將鍍液稀釋等 方法。稀釋的範圍必須爲可充分地獲得目的之金屬被膜之 範圔。具體而言，例如作爲鍍液，於鍍鎳中使用一般的瓦 特浴(比重1.18以上)時，可以純水稀釋成約60% 〇然而， 考慮到鑛敷之附著周期等，較佳爲使添加劑的濃度保持一 定 <'又爲維持鍍液的導電性，較佳爲使氯化鎳濃度保持一 定。又，氯化鎳35〜45g/L、硫酸鎳Μ0〜155g/L '硼酸 30〜40g/L的組成所構成的瓦特浴’其比重爲ι.〇5〜1,12，而 特別適用於本發明13中。 本發明13的導電性微粒子製造裝置中所用之鍍敷金 屬沒有特別的限定，可舉金、銀、銅、鉑、鋅、鐵、錫、 銘、銘、銦、鎳、鉻、駄、鍊、銘、鍺、鍚、砂等爲例β 裝 ’訂 Μ (請先閱讀背而之注意亊項再赞cT本頁) 本紙乐尺度適用中國國家標準（CNS ) Λ4^柏（210X297公垃） 經濟部中央標準局負工消費合作社印紫 459072 五、發明説明（时） 其等可單獨地使用或倂用2種以上。 以下，參照圖面以說明本發明13的導電性微粒子製 造方法之一實施形態。 圖1係顯示本發明的導電性微粒子製造方法中適於使 用的導電性微粒子製造裝置之一例 圖1所示之導電性微粒子製造裝置，係具有：固定於 垂直驅動軸的上端部之圓盤狀底板10 ;配置於上述底板10 的外周上面之僅鍍液可通過之多孔體12;配置於上述多孔 體I2上面之通電用的接觸環11 ;於上部中央具有開口部8 之中空罩1 ;形成於上述中空罩1的外周部與底板1〇間之 夾住上述多孔體21與接觸環11之可旋轉的處理室13 ;將 鍍液従上述開口部8供給至上述處理室13之供給管6 ;用 於接收從上述多孔體12的孔飛散出的鍍液之容器4 ;用以 排出儲留於上述谷器4中的鍍液之排出管7;從上述開口 部8***之接觸鍍液甩的電極2。又，在這種構造的導電 性微粒子製造裝置中，接觸環Η即陰極，多孔體12即過 濾部，電極2即陽極& 鍍液係藉由驅動軸3的旋轉承受離心力而通過多孔體 21，由於處理室13內的鍍液液面會降低，爲補充鍍液係藉 由鍍液供給用的供給管.6以將來自開口部8之鍍液供給至 處理室⑴並使用位準感應器5以將液量控制成麵室內 13的液面經常和電極2a形成接觸狀態。圖2中，2代表正 電極而連接於上述陽極2a。9代表接觸電刷β電極用電源 未圖示出。 ^:尺度適用+國國家標準ί CNS ) ---------- ---------^------1T------Μ (請先閱讀背面之注意事項再後爲本頁) 469072 A7 ^__-— 五、發明説明) 本實施形態中，將鍍液由供給管6供給至處理室13 內，接著從中空罩1的開口部8將形成有導電棊底層之微 粒子投入並分散於處理室Π中。鍍液會隨著驅動軸3 轉而通過多孔體12朝處理室13的外部飛出，其減少量# 從供給管6加以補給。其他鍍敷條件是和通常的鍍敷時木目 同。 上述多孔體12係塑膠或陶瓷所形成之具有連'通氣泡 的過濾器狀多孔體，所採用的孔徑係使鍍液等處理 過、微粒子及導電性微粒子無法通過，又較佳爲’於^板# 多質保持體的上面配置具有僅鍍液可通過的孔徑之過據# 爲形成更均一的鍍層，較佳爲，將驅動軸3的旋轉方 向每隔一定時間逆轉或使其停止。旋轉數及運轉的形式’ 正轉及逆轉時係相同或不同皆可β 本發明14之導電性微粒子製造方法是藉由鍍敷步驟 以於微粒子的表面形成電鍍層。 本發明14中所使用之導電性微粒子製造裝置’係具 有：於側面具陰極並具有可使鍍液通過而排出的過濾部之 可旋轉的處理室，以及設置成不與上述處理室中的陰極接 觸之陽極β 投入上述處理室之微粒子，係基於因上述處理室的旋 轉之離心力效果以形成被壓接於上述處理室的側面之陰極 的狀態。藉由這種狀態下的通電以於微粒子的表面形成鍍 層。之後，將上述處理室的旋轉及通電同時停止，亦即， -------52----------- ^张尺度適用中國國家標窣（CNS ) Λ4^松UI0X297公处） ---------------,訂------β (請先閱讀背面之注$項再填舄本頁) 經濟部中央標準局負工消費合作社印製 經濟部中失標參局負工消费合作社印製 45 9072 at B7 五、發明説明（ π) 一停止上述通電步驟，上述微粒子將基於重力及鍍液之慣 性而被拉入液流中，之後流落到上述處理室的底部’混合 之。若再度使上述處理室旋轉以開始上述通電步驟，微粒 子會在混合下以不同於先前通電步驟的姿勢壓接於上述陰 極。藉由這種狀態下之進行通電以於上述微粒子的表面形 成鍍層，結果可在上述處理室中所有的微粒子上形成均~ 厚的鍍層β 本發明U中，上述處理室的旋轉是在使得離心效果 形成2.0〜40.0的旋轉數下進行β藉由使上述處理室的旋轉 數位於此範圍，即使在微粒子的真比重和鍍液的比重差很 少時，也可在短時間內使微粒子靠近陰離，而得出可進行 電鍍的接觸力。蔓離心效果未滿2.0，因微粒子要靠近陰極 所需的時間變得相當長，不僅效率會變得相當低，由於微 粒子和陰極的接觸力不足、或存在有完全無法靠近陰極的 微粒子’故會產生雙極現象而無法進行電鍍。又，若離心 梦舉藤出..m，雖然微粒子靠近陰離所需的時間可縮短， 但基於離心力的作用而承受朝外周方向的力之鍍液，由於 會在處理室內形成硏缽狀的旋渦，會使得配置於處理室中 央宅腾嬅尚’而使電流無法流通。又，電鍍層係如共晶 銲錫鍍敷般易凝集’當析出被膜爲柔軟的金屬時’若微粒 子朝陰極的接觸力過強’伴隨著被膜的成長會產生凝集的 問題。因此’離心效果係限定成2.〇〜40.0 〇較佳爲3~30， 更佳爲7〜20。 上述離心效果是離心力和重力大小之比，如以下般而 --------------IT------庠 (請先閲讀背面之注意事項再填寫本頁} 本紙浪尺舰财ϋ鮮鮮 經濟部中央標準局負工消费合作社印製 ^69072 A7 ;____B7 五、發明説明（，尸I) 求出。 作用於正進行等速圓運動的質量M(kg)的質點之離心 力Fc(N)以下式代表βThe Central Standards Bureau of the Ministry of Economic Affairs only printed S 459072 A7 B7 V. Description of the invention rrvh (Please read the notes on the back before filling this page) Homopolymers of bridging reactive monomers such as amines, or these bridging reactivity Copolymers of monomers and other polymerizable monomers are examples β Among these, divinylbenzene, hexamethylbenzene, divinyl ether, diethyl ether, alkylene triacrylate, alkylene tetraacrylate, etc. are preferred. As an example. The thermosetting resin is not particularly limited, and examples thereof include phenol-formaldehyde resin, melamine-formaldehyde resin, benzoguanamine-formaldehyde resin, urea-formaldehyde resin, and epoxy resin. The aforementioned elastomer is not particularly limited, and examples thereof include natural rubber and synthetic rubber. The material of the inorganic fine particles is not particularly limited, and examples thereof include silicon dioxide, silicon oxide, hafnium oxide, cobalt oxide, zinc oxide, nickel oxide, manganese oxide, and alumina. The particle size of the above microparticles should preferably be 0.5 ~ 5000 gm, more preferably 0.5 ~ 2500m, and even more preferably 1 ~ 1000 # m *. The coefficient is preferably 50% or less, more preferably 35% or less, even more preferably 20% or less, and most preferably 10% or less. In addition, the so-called coefficient of variation is based on the average quality and the standard deviation is expressed as a percentage, that is, represented by the equation. Coefficient of variation = (standard deviation of particle diameter / average quality of particle diameter) X 100 (%) The plating metal used in the conductive fine particle manufacturing apparatus of the present invention 11 is not particularly limited, and examples thereof include gold, silver, copper, and platinum. , Zinc, iron, tin, aluminum, cobalt, indium, nickel, chromium 'titanium' antimony, bismuth, germanium, cadmium, silicon, etc. are examples. These can be used alone or in combination of two or more types. ^ In the conductive fine particle manufacturing device of the present invention 11, the above-mentioned fine particles ____ ^ are applicable to the Chinese National Standard (CNS) Λ4 Regulations (210 X 297) along the Ministry of Economic Affairs Printed by the Consumer Standards Cooperative Bureau of the Central Bureau of Standards and Materials 4.55 9ΰ7 Β7 V. Description of the Invention (ν ^) When the average particle diameter is 50 # m or less, or when the above-mentioned plating metal is a substance that can easily aggregate such as static tin, Plating is performed in a state in which the dummy platelets are mixed with the fine particles. In the method for producing conductive fine particles of the present invention 12, a plating layer is formed on the surface of the fine particles by a plating step. In the present invention, the conductive fine particle manufacturing apparatus used for the above-mentioned plating step includes a rotatable processing chamber having a cathode on the side and a filter unit that allows the plating solution to pass through and be discharged, and is provided so as not to be in contact with The anode β that is in contact with the cathode in the processing chamber, and the plating step is performed by repeatedly rotating and stopping the processing chamber, and includes an energization step and a stirring step. In the above-mentioned energization step, a plating layer is formed on the surface of the fine particles by applying electricity while the processing chamber is rotating at a constant speed. The microparticles charged into the processing chamber are based on the effect of centrifugal force due to the rotation of the processing chamber to form a state of the cathode that is crimped to the side of the processing chamber. Β is formed on the surface of the microparticles by applying electricity in this state. . After that, the rotation and the energization of the processing chamber are stopped simultaneously, that is, once the energization step is stopped, the fine particles are drawn into the liquid flow based on gravity and the inertia of the plating solution, and then flow to the bottom of the processing chamber and mix. After the above-mentioned energizing step or the stirring step described later, if the processing chamber is rotated again to start the above-mentioned energizing step, the fine particles will be crimped to the cathode in a posture different from the previous energizing step under mixing. By applying electricity in this state, a coating is formed on the surface of the fine particles. As a result, a uniform thick coating can be formed on all the fine particles in the processing chamber. Β This paper is in accordance with the Chinese National Standard (CNS) Λ4 specification (210X297). Public IΓί (Please read the notes on the back before filling out this page) Ή Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and printed by a separate consumer cooperative 4 5 9 Ο 72 V. Description of the invention (_) The above stirring steps are performed by performing only the above The rotation of the processing chamber is to stir the particles. The energization is not performed in the above stirring step. The number of rotations of the above-mentioned processing chamber in the above stirring step is appropriately selected according to the degree of aggregation of the particles. Also, the rotation direction of the processing chamber in the stirring step may be any of the forward and reverse directions, and in order to improve the stirring effect, it is preferable to form a reverse direction with the rotation direction in the step before the stirring step. The operation mode of the agitation step can be the same as the operation mode of the above-mentioned energization step. Although different, it is also possible, but to improve efficiency The stirring effect is preferably as short as possible. Because the stirring effect of the entire plating step can be improved by the above stirring step, as a result, the energization time can be prolonged, and the generated current can be destroyed even if the current density is higher than conventional. The above agitation step should be performed after the above-mentioned energization step, but it can also be performed after the above-mentioned energization step is performed multiple times. When the particles are easy to agglomerate It is also possible to perform the above-mentioned stirring step several times after the above-mentioned energization step. The fine particles used in the conductive fine particle manufacturing apparatus of the present invention 12 may be organic resin fine particles or inorganic fine particles β. The fine particles are formed with a conductive base layer The above-mentioned method for forming the conductive base layer is preferably an electroless plating method, but it is not limited thereto, and other known methods for imparting conductivity may be used to form the above-mentioned organic resin fine particles. Micro-chain polymer composition ----_________ 43__: ___ I scale applicable to China National Standards (CN S) Regulations (originally 210X297) --------------- 1T ------, (#Please read the notes on the back first * Fill this page) 459072 Ministry of Economic Affairs Printed by the Central Bureau of Standards Consumer Cooperatives A7 --_________- V. Description of the invention (year () One particle, can also be fine particles composed of network polymer, can be thermosetting resin fine particles, or it can be composed of elastomer The linear polymer is not particularly limited, and examples thereof include nylon, polyethylene, polypropylene, methylpentene polymer, polystyrene, polymethacrylic acid, methyl ester, polyvinyl chloride, and polyvinyl fluoride. , Polytetrafluoroethylene, polyethylene terephthalate, polybutylene terephthalate, gallate 'polycarbonate, polyacrylonitrile' polyacetal, polyamidamine, etc. are taken as examples. The above-mentioned network polymer is not particularly limited, and examples thereof include divinylbenzene, hexamethylbenzene, divinyl ether, diethylene terephthalate, allyl methanol, alkylene diacrylic acid, oligomeric or poly (peptone-enzyme) Propionate, oligo- or poly (co-diol) dimethacrylate, alkylene triacrylate, alkylene trimethacrylate, alkylene tetraacrylate, alkylene tetramethacrylate, alkylene Homopolymers of bridging reactive monomers such as dipropenamide, or copolymers of these bridging reactive monomers and other polymerizable monomers, etc. are examples β Among them, Yu Fangfeng is 7 benzene, hexamethylbenzene , Diacetyl, diethyl surface, rubbing three touches = = tetra-acrylic acid ester, etc. As the above thermosetting resin, there is no particular limitation, for example-formic acid resin, melamine-formaldehyde resin, benzo Guanoamine-formaldehyde-based resin, urea-formaldehyde-based resin, epoxy-based resin, etc. are examples. The elastomer is not particularly limited, and examples include natural rubber and synthetic rubber. &Quot; ^ ^ As the above-mentioned inorganic There are no particular restrictions on the material of the microparticles. For example, silicon oxide, iron oxide, cobalt oxide, zinc oxide, bell oxide, manganese oxide, aluminum oxide, etc. Please read the precautions on the back before filling out this page) —pack. -V) Applicable to Chinese National Standard CNS> M Regulation (210X 297 cm) 459072 A7 B7 V. Description of the Invention (fv) The particle size of the above microparticles should preferably be 5 ~ 5000 M m, more preferably 0-5 ~ 250. , And more preferably 1 to 100 ## 111. The coefficient of variation of the fine particles is preferably 50% or less, more preferably 35% or less, even more preferably 20% or less, and most preferably 10% or less. The so-called The coefficient of variation is based on the average mass and the standard deviation is expressed as a percentage, that is, represented by the following formula. The coefficient of variation of the standard deviation of the gas particle size / average mass of the particle size) X 100 (%) The plating metal used in the conductive fine particle manufacturing device is not particularly limited, and may be gold, silver, copper, platinum 'zinc' iron, tin, aluminum 'cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium, Cadmium, silicon, etc. are taken as examples. These can be used alone or in combination of two or more. Hereinafter, the present invention will be described with reference to the drawings 12 ' An embodiment of a method for manufacturing conductive fine particles ^ Fig. 11 shows an example of a device for manufacturing conductive fine particles suitable for use in the method for manufacturing conductive fine particles of the present invention. The device for manufacturing conductive fine particles shown in Fig. U includes: fixed A disk-shaped base plate 10 at the upper end of the vertical drive shaft; a porous body 21 disposed on the outer periphery of the base plate 10 only through which the plating solution can pass; a contact ring η disposed on the porous body 21 for current application; A hollow cover 1 having an opening 8 in the center; a rotatable processing chamber 13 formed between the outer periphery of the hollow cover 1 and the bottom plate 10 to sandwich the porous body 21 and the contact ring 11; and removing mineral liquid from the opening 8 A supply pipe 6 to be supplied to the processing chamber 13; a container 4 for receiving the plating solution scattered from the holes of the porous body 12; a discharge pipe 7 for discharging the plating solution stored in the container 4; ----------- 45 ^ · ^ ___, Zhang scale is applicable to the Chinese National Standard (CRS) Λ4 speaking platform (210X29? ^! ^ I --- (谙 Please read the notes on the back and fill in this Page) Ordering, Central Bureau of Standards, Ministry of Economic Affairs ®Κ: Industrial Consumption Printed by cooperation 459072 Printed by the Central Standard of the Ministry of Economic Affairs and Consumer Cooperatives A7 V. Description of the invention (Lf >) The electrode 2 for contact with the plating solution is inserted into the opening 8. Further, in the conductive fine particle manufacturing device having such a structure, the contact ring II is a cathode, the porous body 21 is a filter portion, and the electrode 2 is an anode. The plating solution passes through the porous body 21 due to the centrifugal force received by the rotation of the drive shaft 3, and the plating solution level in the processing chamber 13 is lowered. To supplement the plating solution, the supply pipe 6 for flooding the plating solution is used to supply the plating solution. The plating solution in the opening 8 is supplied to the processing chamber 13, and the level sensor 5 is used to control the amount of the liquid so that the liquid surface of the processing chamber 13 is always in contact with the electrode 2a. In Fig. 11, 2 represents a positive electrode and is connected to the anode 2a. 9 stands for contact brush. The power supply for the electrodes is not shown. In this embodiment, the plating solution is supplied into the processing chamber 13 from the baking tube 6, and then the microparticles having the conductive base layer formed therein are introduced from the opening 8 of the hollow cover 1 and dispersed in the processing chamber 13. The plating solution will fly out of the processing chamber 13 through the porous body 12 as the drive shaft 3 rotates, and the reduction will be replenished from the supply pipe 6. The other plating conditions are the same as those in ordinary plating. The porous body 21 is a filter-like porous body formed by plastic or ceramics with communicating bubbles, and the pore size adopted is such that a treatment liquid such as a plating solution can pass through, and particles and conductive particles cannot pass through. A filter 20 having a pore size through which only a plating solution can pass is disposed on the upper surface of the multi-shaped substance holding body 22. In order to form a more uniform plating layer, it is preferable to reverse or stop the rotation direction of the drive shaft 3 at regular intervals. The number of rotations and the form of operation can be the same or different during forward and reverse rotations. -άά ____ ^ Zhang scale is applicable to Chinese National Standards (CNS) Λ4 坭 grid (2! 0 × 2 men "" (please read the precautions on the back before you go to this page), 1T 烺. 45 9〇 Central Bureau of Standards, Ministry of Economic Affairs Printed by a consumer cooperative A7 B7 V. Description of the invention (44) The method for manufacturing conductive fine particles of the invention 13 is to form a plating layer on the surface of the fine particles by a plating step. ° The conductive fine particles used in the invention 13 are manufactured The device includes a rotatable processing chamber having a cathode on the side and a filter portion through which the plating solution can be discharged, and an anode provided so as not to contact the cathode in the processing chamber. The particles charged into the processing chamber are based on the effect of centrifugal force due to the rotation of the processing chamber, so that the state of the cathode connected to the side of the processing chamber is formed. The coating is formed on the surface of the particles by applying electricity in this state. . After that, the rotation and energization of the processing chamber are stopped at the same time, that is, as soon as the energization step is stopped, the particles are drawn into the liquid flow based on gravity and the inertia of the plating solution, and then flow to the bottom of the processing chamber and mix. If the processing chamber is rotated again to start the energization step, the particles will be crimped to the cathode in a different posture from the previous energization step under mixing. By applying electricity in this state, a plating layer is formed on the surface of the fine particles, and as a result, a uniform thick plating layer can be formed on all the fine particles in the processing chamber. The fine particles used in the present invention 13 are not particularly limited, and examples thereof include metal fine particles, organic resin fine particles, and inorganic fine particles. When the above-mentioned organic resin fine particles or inorganic resin fine particles are used, it is preferable to form a conductive base layer. The method for forming the above-mentioned conductive base layer is preferably an electroless plating method, but it is not limited to this and can be formed by other known methods for imparting conductivity. The above-mentioned metal fine particles are not particularly limited, and examples thereof include iron and copper, -------------- 4 ^ ----------------, Zhang You Applicable to the Chinese National Twin (CNS) Λ4 Regulations (2) OX2m > ^) (锖 Please read the notes on the back side and fill in this page, ¾ page) Preface 459072 A7 B7 V. Description of Invention ((^ Γ) Ministry of Economic Affairs The Central Bureau of Standards and Electronics Co., Ltd. Cooperative Cooperative Association printed silver, gold, tin, lead, pins, mirrors, cymbals, inscriptions, inscriptions, contacts, inscriptions, fresh, cranes, and other alloys as examples. The above organic resin particles are not special The limitation is exemplified by fine particles made of a linear polymer, fine particles made of a network polymer, fine particles made of a thermosetting resin, fine particles made of an elastomer, and the like. The linear polymer is not particularly limited, and may be nylon. , Polyethylene, polypropylene, methylpentene polymer, polystyrene, polymethyl methacrylate, polyvinyl chloride, polyvinyl fluoride, polytetrafluoroethylene, polyethylene terephthalate, polyethylene terephthalate As examples, polybutylene terephthalate, polysulfonate, polycarbonate, polyacrylonitrile, polyacetal, polyamidamine, etc. The material is not particularly limited, and examples thereof include divinylbenzene, hexamethylbenzene, divinyl ether, diethylene glycol, allyl methanol, alkylene diacrylate, oligo or poly (alkylene glycol) diacrylate, oligo or Poly (alkylene glycol) dimethacrylate, alkylene triacrylate, alkylene trimethacrylate, alkylene tetraacrylate, alkylene tetramethacrylate, alkylene dimethyamine, etc. Homopolymers of monomers, or these bridging reactive monomers and benzene, hexamethylbenzene, divinyl ether, diethyl stealth, alkylene triacrylate, alkylene tetraacrylate, etc. The resin is not particularly limited, and examples thereof include phenol-formaldehyde-based resin, melamine-formaldehyde-based resin, benzoguanamine-formaldehyde-based resin, urea-formaldehyde-based resin, and epoxy-based resin. For example, please refer to natural rubber, synthetic rubber, etc. (Please read the precautions before filling this page) -Packing-° A paper size is applicable to Chinese National Standards (CNS) AUJiL #, (210 · Χ 297 male garbage.) ^ 5 9 0 72 A7 V. Hair Description (The consumption cooperation of employees of the Central Standards Bureau of the Ministry of Economic Affairs, Du Yin, and the materials made of the above-mentioned inorganic fine particles is not particularly limited. Examples include silicon dioxide, silicon oxide, iron oxide, cobalt oxide, zinc oxide, nickel oxide, and manganese oxide. And alumina, for example. The particle size of the fine particles is preferably 0.5-5000 // m, more preferably 0.5 ~ 250 00em, and even more preferably 1 ~ H) 00 # m. Moreover, the coefficient of variation of the fine particles is suitable. It is 50% or less, more preferably 35% or less, even more preferably 20% or less, and most preferably 10% or less. The so-called coefficient of variation is based on the average quality and the standard deviation is expressed as a percentage, that is, times To represent. Coefficient of variation = (standard deviation of particle size / average quality of particle size) X 100 (%) In the present invention, the specific gravity difference between the fine particles and the plating solution is 0.04 to 22.00. If it is less than 0.04, it must take a considerable amount of time for the particles to contact the cathode. Since the energization starts before all the particles are crimped to the cathode, a bipolar phenomenon may occur. In addition, if the number of rotations of the processing chamber is increased, the moving speed of the particles can be increased, but the plating solution that receives the force in the outer circumferential direction due to the centrifugal force will form a mortar-like vortex in the processing chamber, and will be arranged in the processing chamber. The central electrode is exposed, causing current to flow. If the moving time required for the particles to come into contact with the cathode is too long, the proportion of the energization time in one cycle will be reduced, not only the efficiency will be lowered, but also the liquid surface will form a bowl-shaped swirl due to the long rotation of the processing chamber. This makes the energization amount extremely low. On the other hand, generally known solid matter has a specific movement of about 0.5 to 23, and in the manufacturing method of the present invention, the larger the specific gravity difference between the fine particles and the plating solution is, the easier it is to move the fine particles in the plating solution, so the effect is excellent. --------- 1 ------ 1T ------ 0 (Please read the notes on the back before continuing on this page) Only the Chinese national standard (CNS) is applicable for the paper size Λ4 Regulations (2IOX 297 public 尕 459072 Α7 Β7 Printed by the Male Workers Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. & Description of Invention) That is, the range of specific gravity difference that can be deposited is 0.04 ~ 22.00. 0.04 to 11.00, more preferably 0.04 to 0.2. The method of making the difference between the specific gravity of the fine particles and the plating solution within the above range includes a method of increasing the specific gravity of the fine particles and a method of reducing the specific gravity of the plating solution. The method of increasing the specific gravity of the fine particles, for example, when the organic resin fine particles or inorganic resin fine particles are used as the fine particles, a method of increasing the film thickness of the conductive base layer formed on the surface of the fine particles, etc. < Specifically For example, when the organic resin fine particles of specific gravity M9 are subjected to electroless nickel plating (specific gravity 8.85), as shown in FIG. 1, the specific gravity of the fine particles increases as the thickness of the plating film increases. A conductive base layer such as electroless plating is formed on the surface of the fine particles That is, the specific gravity of the fine particles can be arbitrarily controlled ^ > The method for reducing the specific gravity of the plating solution is, for example, a method of diluting the plating solution. The dilution range must be a range in which the intended metal coating can be sufficiently obtained. Specifically, for example, when a general Watt bath (specific gravity 1.18 or more) is used as the plating solution in nickel plating, it can be diluted to about 60% with pure water. However, considering the deposition period of the mineral deposit, it is preferable to make the additive Constant concentration < 'To maintain the conductivity of the plating solution, it is preferable to keep the concentration of nickel chloride constant. Also, nickel chloride 35 ~ 45g / L, nickel sulfate M0 ~ 155g / L' boric acid 30 ~ 40g / The Watt bath having a composition of L has a specific gravity of ι.05 to 1,12, and is particularly suitable for use in the present invention 13. The plating metal used in the conductive fine particle manufacturing apparatus of the present invention 13 is not particularly limited, For example, gold, silver, copper, platinum, zinc, iron, tin, inscriptions, indium, nickel, chromium, osmium, chains, inscriptions, germanium, osmium, sand, etc. can be used as an example. Please note that this item will be praised again cT this page) This paper music standard is applicable to Chinese national standards (C NS) Λ4 ^ Bai (210X297 public waste) Central Laboratories of Ministry of Economic Affairs and Consumer Cooperatives, India Purple 459072 5. Description of the invention (hours) These can be used individually or in combination of two or more. Below, please refer to the drawings to explain this An embodiment of the method for producing conductive fine particles of invention 13. Fig. 1 shows an example of a conductive fine particle manufacturing apparatus suitable for use in the method for manufacturing conductive fine particles of the present invention. The conductive fine particle manufacturing apparatus shown in Fig. 1 has : A disk-shaped base plate 10 fixed to the upper end portion of the vertical drive shaft; a porous body 12 disposed on the outer periphery of the base plate 10 only through which the plating solution can pass; a contact ring 11 arranged on the porous body I2 for power application; A hollow cover 1 having an opening 8 in the center of the upper portion; a rotatable processing chamber 13 sandwiching the porous body 21 and the contact ring 11 formed between the outer periphery of the hollow cover 1 and the bottom plate 10; The opening 8 supplies the supply pipe 6 to the processing chamber 13; the container 4 for receiving the plating solution scattered from the holes of the porous body 12; the discharge pipe for discharging the plating solution stored in the valleyr 4 7; 8 is inserted into the opening portion in contact with the electrodes 2 of the rejection of the bath. Further, in the conductive fine particle manufacturing device having such a structure, the contact ring is a cathode, the porous body 12 is a filter, and the electrode 2 is an anode. The plating solution is subjected to centrifugal force by the rotation of the drive shaft 3 and passes through the porous body 21 Since the level of the plating solution in the processing chamber 13 is lowered, a supply pipe for supplying the plating solution is used to supplement the plating solution. 6 is used to supply the plating solution from the opening 8 to the processing chamber ⑴ and a level sensor is used. 5 In order to control the amount of liquid so that the liquid surface of the chamber 13 always comes into contact with the electrode 2a. In Fig. 2, 2 represents a positive electrode and is connected to the anode 2a. 9 denotes a power source for contacting the brush β electrode, which is not shown. ^: Applicable scale + national standards of China ί CNS) ---------- --------- ^ ------ 1T ------ Μ (Please read the back first (Notes on this page will be followed) 469072 A7 ^ __-— V. Description of the Invention) In this embodiment, the plating solution is supplied from the supply pipe 6 into the processing chamber 13 and then formed from the opening 8 of the hollow cover 1 The fine particles with the bottom layer of conductive rhenium are put in and dispersed in the processing chamber Π. The plating solution will fly out of the processing chamber 13 through the porous body 12 as the drive shaft 3 rotates, and the amount of the plating solution will be replenished from the supply pipe 6. The other plating conditions are the same as those for ordinary plating. The above-mentioned porous body 12 is a filter-like porous body formed with plastics or ceramics and having continuous air bubbles, and the pore size adopted is such that the plating solution is treated, and fine particles and conductive fine particles cannot pass through, and it is preferably 'Yu ^ The plate # is provided on the top of the multi-quality holder with a hole diameter through which only the plating solution can pass. In order to form a more uniform plating layer, it is preferable to reverse or stop the rotation direction of the drive shaft 3 at regular intervals. The number of rotations and the form of the operation may be the same or different during normal rotation and reverse rotation. The method for producing conductive fine particles of the present invention 14 is to form a plating layer on the surface of the fine particles by a plating step. The conductive fine particle manufacturing apparatus' used in the present invention 14 has a rotatable processing chamber having a cathode on the side and a filter unit that allows the plating solution to pass through and be discharged, and a cathode not provided in the processing chamber. The contacted anode β is charged into the microparticles in the processing chamber based on the effect of centrifugal force due to the rotation of the processing chamber to form a state of a cathode that is crimped to the side of the processing chamber. By applying electricity in this state, a plating layer is formed on the surface of the fine particles. After that, the rotation and energization of the processing chamber are stopped at the same time, that is, ------- 52 ----------- ^ Zhang scale is applicable to China National Standard (CNS) Λ4 ^ 松 UI0X297 (Public Office) ---------------, Order ------ β (Please read the note on the back and fill in this page) Cooperative printed by the Ministry of Economic Affairs of the Ministry of Economic Affairs, Subcontractor, Consumer Cooperative, printed by 45 9072 at B7 V. Description of the invention (π) As soon as the above electrification step is stopped, the particles will be drawn into the liquid flow based on gravity and the inertia of the plating solution. And then flowed to the bottom of the above-mentioned processing chamber to 'mix it. If the processing chamber is rotated again to start the energization step, the particles will be crimped to the cathode in a different posture from the previous energization step under mixing. By applying electricity in this state, a plating layer is formed on the surface of the fine particles. As a result, a uniform coating layer can be formed on all the fine particles in the processing chamber. In the invention U, the rotation of the processing chamber is performed by centrifugation. The effect is formed at a rotation number of 2.0 to 40.0. By setting the rotation number of the processing chamber in this range, even when the difference between the true specific gravity of the fine particles and the specific gravity of the plating solution is small, the fine particles can be brought close to the shade in a short time. Away, and the contact force that can be electroplated is obtained. The centrifugal effect is less than 2.0, because the time required for the particles to get close to the cathode becomes quite long, not only will the efficiency become quite low, but the contact force between the particles and the cathode is insufficient, or there are particles that cannot reach the cathode at all. Bipolar phenomenon occurs and plating cannot be performed. In addition, if the centrifugal dream lifts Fuji..m, although the time required for the particles to get closer to the shade can be shortened, the plating solution that bears the force in the outer circumferential direction due to the centrifugal force will form a mortar-like shape in the processing chamber. The vortex will cause the current to flow in the center of the processing room. In addition, the plating layer is easy to agglomerate like eutectic solder plating. When the film is deposited as a soft metal, if the contact force of the particles toward the cathode is too strong, the problem of agglomeration occurs with the growth of the film. Therefore, the 'centrifugation effect' is limited to 2.0 to 40.0, preferably 3 to 30, and more preferably 7 to 20. The above centrifugal effect is the ratio of centrifugal force and gravity, as follows -------------- IT ------ 庠 (Please read the precautions on the back before filling this page} Printed on this paper, printed by the Central Standards Bureau, Ministry of Economic Affairs, Fresh Economy, Central Standards Bureau, and Consumer Cooperatives. ^ 69072 A7; ____ B7 V. Description of the Invention (, Corpse I) Calculate the mass M (kg) that is performing constant velocity circular motion The centrifugal force of the particle Fc (N) is represented by the following formula

Fc=M ω 2Γ=Μν2/Γ=:ΜΝ2π2Γ/900 式中，ω代表旋轉角速度(rad/sec)、r代表旋轉半徑 (取).、.多周速度(m/sec)、η代表旋轉速度(rpm)»因此， 離心效果zk以下式代表。 •··.. ，· .·-.··* _ —“· ............... Ζ= ω 2r/g=V2/gr=N2iiV900g 式中，g代表重力加速度(tn/sec2)。 依上式，離心效果可表示成處理室旋轉速度和處理室 半徑的函數。作爲參考，處理室直徑280mm時處理室旋轉 數、離心效果、周速度係記載於下表中。_ 旋轉數(rpm) 855 600 500 300 250 150 100 離心效果 114.5 56.4 39.2 14.1 9.8 3.5 1.6 周速度(m/min) 752.1 527.8 439.8 263.9 219.9 131.9 88.0 爲了在所有的微粒子表面形成電鍍層，必須在經過使 得所有的微粒子都移動並壓接於陰極的時間後再開始通電 。若在所有的微粒子壓接於陰極前就開始通電’將產生雙 極現象，使電鍍層或導電基底層溶解而造成鍍敷不良β 因此，本發明14中，上述通電是在處理室的旋轉開 弟J)·5〜10秒锋才開始。若未滿0·5秒，由於所有的微粒子 壓接於陰極前就開始通電，將產生雙極現象；若超過秒 ，1循環內的通電時間比例會過少’效率將降低’故係限 定於上述範圍內。較佳爲1〜8秒，更佳爲1〜5秒。然而’ ______ SA ............. 尺度適用中國囤家標準（CNS ) Λ4规格（2】〇X 297^i ) ---------------IT------> (#先閱讀背面之注意事項再谈.离本頁) 45 9 0 72 u Α7 Β7 經濟部中央標华局員工消费合作社印^ 五、發明説明 _t述通電開始時間係因微粒子的真比重和鍍液比重之差、 或微粒子的粒徑而不同，故須配合微粒子的材質、形狀、 粒徑、鍍敷金屬種類、鍍浴種類等以在上述範圍內適當地 設定。 本發明14中，上述處理室的停止時間爲0〜10秒。只 要在此範圍內，由於在微粒子從陰極離開而藉由下次的旋 轉再度靠近陰離之間係進行充分地攪拌，故可進行更一地 鍍敷。若超過10秒，處理室內的微粒子會進行充分地混合 而可均一地鍍敷，但1循環內的通電時間比例會過少，效 率將降低，故係限定於上述範圍內。較佳爲0.5-5秒，更 佳爲1〜3秒。若停止時間過短，藉由處理室的旋轉停止而 使微粒子返回處理室的底板中央前就會開始下一個旋轉， 故無法進行充分地攪拌，有時會使鍍敷變得不均一。然而 ，上述停止時間係因微粒子的真比重和鍍液比重之差、或 微粒子的粒徑而不同，故須配合微粒子的材質、形狀、粒 徑、鍍敷金屬種類、鍍浴種類等以在上述範圍內適當地設 定β 本發明15係藉鍍敷步驟以於微粒子的表面形成電鍍 層之導電性微粒子製造方法，上述鍍敷步驟所用之導電性 微粒子製造裝置係具有：於側面具陰極並具有可使鍍液通 過而排出的過濾部之可旋轉的處理室，以及設置成不與上 述處理室中的陰極接觸之陽極。基於上述處理室的旋轉之 離心力效果而使微粒子在接觸上述陰極的狀態下進行通電 ，而於微粒子的表面形成電鍍層，之後停止上述處理室的 (請先閱讀背而之注意事項再填寫本頁) 、τ -..¾ 本紙張尺度適用中國國家標苹（CNS ) Λ4規格（210Χ 297公;ίί ) 經濟部中央標準扃負工消费合作社印製 453072 五、發明説明（JTp 旋轉及通電，再反覆進行上述處理室的旋轉及停止。上述 處理室的旋轉是在離心效果2.0〜40.0的旋轉數下進行’上 述通電，在微粒子的表面所形成的電鍍層膜厚形成既定値 前，是在處理室的旋轉開始3〜10秒後開始’在微粒子的表 靣所形成的電鍍層膜厚形成既定値後’是在處理室的旋轉 開始0.5〜10秒後、即比在微粒子的表面所形成的電鍍層膜 厚形成既定値前的通電時間短的時間內開始。 本發明15的導電性微粒子製造方法’是使用和本發 明14的導電性微粒子製造方法相同的導電性微粒子製造裝 置，藉由使通電開始時間比鍍敷步驟初期階段長，以防止 鍍敷步驟初期易產生的雙極現象。 本發明15中之通電，在上述微粒子的表面所形成的 電鑛層膜厚形成既定値前，是在處理室的旋轉開始3~1〇秒 後開始。亦即，在鑛敷步驟初期階段，藉由使通電開始時 間長，以使所有的微粒子完全朝陰極移動並接觸陰極，而 防止雙極現象的產生。又，在鍍敷步驟初期階段，由於電 流密度設低時不易產生雙極現象，故設定電流密度宜爲 0.1〜Ι,ΟΑ/dm2。更佳爲 0.2〜0.5A/dm2。 本發明15中之上述通電，在微粒子的表面所形成的 電鍍層膜厚形成既定値後，是在處理室的旋轉開始〜10 秒後、即比在微粒子的表面所形成的電鍍層膜厚形成既定 値前的通電時間短的時間內開始。亦即，若隨著鍍敷步驟 之進行而使微粒子表面的電鍍層形成某一程度，該微粒子 和鍍液的比重差會變大，由於變成微粒子在短時間內即可 (請先閱讀背面之注意事項再填寫本頁) -一° •、戈 本紙侠尺度適用中國國家標準（CNS ) Λ4规枋（210_Χ297公垃） ^5 9072 Α7 _ Β7 五 '發明説明（1) 移動至陰極，故藉由使通電開始時間比鍍敷步驟初期短即 可提高鍍敷步驟的效率β在此階段，由於電流密度越高效 率越高，故設定電流密度宜爲0.5〜5,OA/dm2。更佳爲 1.0〜3.0A/dm2。 如此般，於鍍敷步驟中，藉由變更鍍敷條件可防止鍍 敷步驟初期的雙極現象並高效率地形成電鍍層。變更鍍敷 條件之時機係微粒子表面所形成的電鍍層的膜厚爲既定値 時，此時微粒子的比重變大，即使通電開始時間、即微粒 子移動所需的時間縮短也可以使所有的微粒子充分地朝陰 極移動並接觸陰極。但由於微粒子的移動速度是依粒徑、 微粒子和鍍液的比重差、伴隨鍍層的成長之粒子比重增加 、鍍液的粘度、鍍液的過濾速度等而不同，係需配合被鍍 物之微粒子的粒徑、鍍液種類、處理室的旋轉數、多孔體 的孔徑等以適當決定出。 經濟部中央標準局員工消f合作社印奴 (錆先閱讀背面之注意亊項再破寫本頁) 本發明14及本發明15所用的微粒子沒有特別的限定 ，可舉金屬微粒子、有機樹脂微粒子、無機微粒子等爲例 。使用上述有機樹脂微粒子或無機樹脂微粒子時，以形成 有導電性基底層者較佳。上述導電性基底層之形成方法， 較佳爲無電解鍍敷法，但並非以此爲限而可使用其他周知 的導電性賦予方法以形成出。 作爲上述金屬微粒子沒有特別的限定，可舉鐵、銅、 銀、金、錫、鉛、鉑、鎳、鈦、鈷 '鉻、鋁、鋅、鎢、其 等的合金等爲例a 上述有機樹脂微粒子沒有特別的限定，可舉直鏈狀聚 _ — —_____ _57 本紙張尺度適用中國國家標準（CNS M4規梏（210X29?公;) 4 經濟部中央摇準局員工消费合作社印製 亡 90 72 A7 -----— _B7 五、發明説明（jrT) " 合物構成的微粒子、網狀聚合物構成的微粒子、熱硬化性 樹脂微粒子、彈性體構成的微粒子等爲例^ 上述直鏈狀聚合物沒有特別的限定，可舉尼龍、聚乙 嫌、聚丙條、甲基戊烯聚合物、聚苯乙烯、聚甲基丙烯酸 甲酯、聚氯乙烯、聚氟乙烯、聚四氟乙烯、聚對苯二甲酸 乙二醇酯、聚對苯二甲酸丁二醇酯、聚磺酸酯、聚碳酸酯 、聚丙烯膪、聚縮醛、聚醯胺等爲例。 作爲上述網狀聚合物沒有特別的限定，可舉二乙烯苯 、六甲苯、二乙烯醚、二乙燦風、烯丙基甲醇、烷撐二丙 烯酸酯、寡或聚(烷撐二醇)二丙烯酸酯、寡或聚(烷撐二醇） 二甲基丙烯酸酯、烷撐三丙烯酸酯、烷撐三甲基丙烯酸酯 、烷撐四丙烯酸酯、烷撐四甲基丙烯酸酯、烷撐二丙烯醯 胺等架橋反應性單體的均聚物’或這些架橋反應性單體和 其他聚合性單體的共聚物等爲例。其等中，最佳爲二乙烯 苯、六甲苯、二乙烯醚、二乙燦5風、烷撐三丙烯酸酯、烷 撐四丙烯酸酯等爲例。 作爲上述熱硬化性樹脂沒有特別的限制，可舉酚··甲醛 系樹脂、三聚氰胺·甲醛系樹脂、苯並鳥糞胺-甲醛系樹脂 、尿素-甲醛系樹脂' 環氧系樹脂等爲例。 作爲上述彈性體沒有特別的限定，可舉天然橡膠、合 成橡膠等爲例。 作爲上述無機微粒子的材質沒有特別的限制，可舉二 氧化矽、氧化矽、氧化鐵、氧化鈷、氧化鋅、氧化鎳、氧 化猛、氧化鋁等爲例。 ____________58________ 本紙张尺反適用中國國客橾準（CNS ) Λ4規拮（210X29?公处） ---------神衣------ΪΤ------腺 (讀先閱讀背面之注意事項再斯寫本頁) A7 459012 五、發明説明（ ft) 上述微粒子的粒徑宜爲0.5-5000 # ra，更佳爲 0.5〜2500#m，再更佳爲卜1000#m。又，上述微粒子的變 動係數宜爲50%以下，更佳爲35%以下，再更佳爲20%以 下，最佳爲10%以下。又’所謂變動係數，係以平均質作 基準而將標準偏差以百分率表示，即以次式來代表。 變動係數=(粒徑的標準偏差/粒徑的平均質）Χ 一般而言，基於離心力的作用之流體中粒子的移動速 度，係依離心效果、粒子和液體的比重差、粒徑、流體的 粘度而變化。因此，使離心效果一定的條件中，比重差、 粒徑越大則移動速度越快°因此，由於被鍍物的微粒子粒 徑越小則粒子移動速度越慢，本發明U及15中所用的微 粒子宜爲和鍍液的比重差大者β .上述電鍍層沒有特別的限定，可舉金、銀、銅、鉑、 鋅、鐵、錫、銘、銘、銦、錬、鉻、欽、錄、祕、錯、鎘 、矽等爲例。其等可單獨地使用或倂用2種以上。 以下，參照圖面以說明本發明14及本發明15的導電 性微粒子製造方法之一實施形態β 圖U係顯示本發明14的導電性微粒子製造方法中適 於使用的導電性微粒子製造裝置之一例》 圖11所示之導電性微粒子製造裝置，係具有：固定 於垂直驅動軸的上端部之圓盤狀底板10 ;配置於上述底板 10的外周上面之僅鍍液可通過之多孔體21 ;配置於上述多 孔體21上面之通電用的接觸環11 ;於上部中央具有開口 部8之中空罩1 ;形成於上述中空罩1的外周部與底板10 (請先閱讀背面之注意事項再填寫本頁) *1Τ 序 經濟部中央摞準局員工消费合作社印狀 本紙张尺度適用中國國家標準（CNS )六4规輅（210Χ297公浼） 45 9 072 A7 B7 五、發明説明（/^1) 間之夾住上述多孔體21與接觸環11之可旋轉的處理室13 ;將鍍液從上述開口部8洪給至上述處理室13之洪給管6 ;用於接收從上述多孔體21的孔飛散出的鍍液之容器4 ; 用以排出儲留於上述容器4中的鍍液之排出管7;從上述 開口部8***之接觸鍍液用的電極2。又，在這種構造的 導電性微粒子製造裝置中，接觸環即陰極，多孔體21 即過濾部，電極2即陽極。 鍍液係藉由驅動軸3的旋轉承受離心力而通過多孔體 21，由於處理室13內的鍍液液面會降低，爲補充鍍液係藉 由鍍液供給用的供給管6以將來自開口部8之鍍液供給至 處理室13，並使用位準感應器5以將液量控制成處理室內 13的液面經常和電極2a形成接觸狀態|。圖11中，2代表 正電極而連接於上述陽極2a。9代表接觸電刷。電極用電 源未圖示出。 本實施彤態中，將鍍液由供給管6供給至處理室13 內，接著從中空罩1的開口部8將形成有導電基底層之微 粒子投入並分散於處理室13中。鍍液會隨著驅動軸3的旋 轉而通過多孔體12朝處理室13的外部飛出，其減少量係 從供給管6加以補給。其他鍍敷條件是和通常的鍍敷時相 同。 上述多孔體21係塑膠或陶瓷所形成之具有連通氣泡 的過濾器狀多孔體，所採用的孔徑係使鍍液等處理液可通 過、微粒子及導電性微粒子無法通過，又較佳爲，於板狀 多質保持體22的上面配置具有僅鍍液可通過的孔徑之過濾 、張尺度適用中國國家標準（CNS )六4規枯（210Χ2@公沿) ---------)^衣------1Τ------ (請先閲讀背面之注意事項再填贫本頁) 經濟部中央標準局貝工消跄合作杜印褽 4D 9072 經濟部中央標隼局負工消费合作社印製 A7 B7 五、發明説明（if ) 片20。 爲形成更均一的鍍層，較佳爲，將驅動軸3的旋轉方 向每隔一定時間逆轉或使其停止。旋轉數及運轉的形式， 正轉及逆轉時係相同或不同皆可，不同於本發明的範圍內 亦可。 其次，對於使用圖11所示之導電性微粒子製造裝置 之本發明的導電性微粒子製造方法之一實施形態，參照圖 2所示的運轉條件之時序圖以說明之。 首先，將比重1.23、粒徑650/zm之表面形成有無電 解鍍鎳層的有機樹脂微粒子，投入加有鍍液之比重1.11的 瓦特浴的處理室13內。此情況下，微粒子和瓦特浴的比重 差爲〇·〇5。接著，花1秒以將處理室13加速。處理室13 在到達周速226m/min後以該速度定速旋轉。進入定速旋轉 3秒後(處理室13的旋轉開始4秒後，即粒子移動時間爲4 秒)打開整流器以開始通電並進行鍍敷。通電時間爲5秒。 之後，花1秒將處理室13減速，使其停止1秒◊以此當作 】.個循環’將處理室13隔1循環逆旋轉以實施鍍敷步驟。 又’本實施形態中所用的導電性微粒子製造裝置中之 多孔體21，是在高密度聚乙烯所形成的孔徑i〇0#m '厚 6mm的板狀多孔質保持體22的上面貼附尼龍製的孔徑10 μιη '厚10ym的過濾片20所構成。 本發明16，係導電性微粒子、利用該導電性微粒子之 各向異性導電接著劑、以及導電連接構造體 本發明16之導電性微粒子之粒徑爲0.5〜。若 说尺度適用中國國家標準（〇^)八4規枱（210/297公处） ---------^------1Τ------腺. (請先閱讀背面之注意亊項再填爲本頁) 45 9072 A7 B7 五、發明説明（·$) 存在有粒徑未滿之粒子’應接合的電極間導電性微 粒子會無法接觸，電極間會有間隙產生而發生接觸不良。 若超過5000ym，由於無法進行微細的導電接合’故限定 於上述範圍內。較佳爲〇.5〜2500Mm、更隹爲1〜1000#m 、再更佳爲5-300 ym、再更佳爲W〜1⑽#最佳爲 20^50 β m β 本發明16之導電性微粒子之變動係數爲50%以下。 上述變動係數以式： (c/Dn)X 100 代表° σ代表粒徑的標準偏差’ Dn代表數平均粒徑。 上述變動係數若超過50%會使粒子變得不均一 ’於後 述步驟之透過導電性微粒子使電極彼此接觸時’將大量產 生不接觸的粒子’而易於電極間產生漏電流現象’故限定 於上述範圍內。 較佳爲35¾以下，更佳爲20%以下’再更佳爲10°/。以 下，最佳爲5%以下。 本發明16的導電性微粒子之長寬比未滿I.5 β上述長 寬比係粒子的平均長徑除以平均短徑所得値。上述長寬比 若爲1.5以上，粒子會變得不均一’透過導電性微粒子使 電極彼此接觸時，將大量產生不接觸的粒子’而易於電極 間產生漏電流現象，故限定於上述範圍內。 較隹爲未滿1.1，更佳爲未滿i.05。 依本發明16的導電性微粒子之上述粒徑’上述長寬 比及上述變動係數，係藉由使用電子顯微鏡之觀察以測定 本紙張尺度適用中國國客標隼（CNS)A4现枯（210Χ 297公兑） (請先閱讀背面之注意事項再坻寫本頁)Fc = M ω 2Γ = Μν2 / Γ =: MN2π2Γ / 900 where ω represents the rotational angular velocity (rad / sec), r represents the radius of rotation (taken), .. multi-circle velocity (m / sec), and η represents the rotational speed (rpm) »Therefore, the centrifugal effect zk is represented by the following formula. • ·· .. ， ···-. ·· * _ — “· ............... ZZ = ω 2r / g = V2 / gr = N2iiV900g where g represents Gravity acceleration (tn / sec2). According to the above formula, the centrifugal effect can be expressed as a function of the rotation speed of the processing chamber and the radius of the processing chamber. For reference, the number of rotations of the processing chamber, the centrifugal effect, and the peripheral velocity are described below when the processing chamber diameter is 280 mm. In the table. After the time has passed for all the particles to move and crimp to the cathode, the energization will begin. If all the particles start to energize before being crimped to the cathode, a bipolar phenomenon will occur, which will cause the plating layer or the conductive base layer to dissolve and cause Poor plating β Therefore, in the present invention 14, in the present invention, the above-mentioned energization is started at the front of the rotation of the processing chamber for 5 to 10 seconds. If it is less than 0.5 seconds, all the particles are crimped before the cathode. When the power is turned on, a bipolar phenomenon will occur. The proportion of electricity time will be too small, so 'efficiency will decrease', so it is limited to the above range. It is preferably 1 to 8 seconds, more preferably 1 to 5 seconds. However, '______ SA ............ . Applicable to Chinese storehouse standard (CNS) Λ4 specification (2) 〇X 297 ^ i) ---- IT ------ >(# 先 读 背Please note again. From this page) 45 9 0 72 u Α7 Β7 Printed by the Consumer Standards Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs ^ V. Description of the invention _t The starting time of electricity is due to the difference between the true specific gravity of the particles and the specific gravity of the plating solution. Or particle size of the fine particles, the material, shape, particle size, type of plating metal, type of plating bath, etc. of the fine particles must be matched to appropriately set within the above range. In the invention 14, the stop time of the processing chamber It is 0 to 10 seconds. As long as it is within this range, the fine particles can be further stirred because the particles are separated from the cathode and then re-closed to the anion by the next rotation, so more plating can be performed. If it exceeds 10 seconds , The particles in the processing chamber will be fully mixed and can be uniformly plated, but the proportion of energization time in one cycle will be too small, and the efficiency will be Low, so it is limited to the above range. It is preferably 0.5-5 seconds, more preferably 1 to 3 seconds. If the stop time is too short, the particles are returned to the center of the bottom plate of the processing chamber by stopping the rotation of the processing chamber. The next rotation will start, so sufficient stirring cannot be performed, and the plating may become non-uniform. However, the stop time varies depending on the difference between the true specific gravity of the fine particles and the specific gravity of the plating solution, or the particle size of the fine particles. Therefore, the material, shape, particle size, type of plating metal, type of plating bath, etc. of the fine particles must be matched to appropriately set β within the above range. The present invention 15 is a conductive fine particle that forms a plating layer on the surface of the fine particles through a plating step. In the manufacturing method, the conductive fine particle manufacturing device used in the above-mentioned plating step includes a rotatable processing chamber having a cathode on a side surface and a filter unit through which a plating solution can be discharged, and a processing chamber provided so as not to be in contact with the processing chamber. Anode with cathode contact. Based on the centrifugal force effect of the rotation of the processing chamber, the particles are energized in a state in which they contact the cathode, and a plating layer is formed on the surface of the particles. After that, the processing chamber is stopped (please read the precautions before filling this page) ), Τ-.. ¾ This paper size is applicable to China National Standard (CNS) Λ4 specification (210 × 297 male; ί) Printed by the Central Standard of the Ministry of Economic Affairs and Consumer Cooperatives 453072 5. Description of the invention (JTp rotation and power, then The processing chamber is rotated and stopped repeatedly. The rotation of the processing chamber is performed at a rotation number of 2.0 to 40.0 with the centrifugal effect. The above-mentioned energization is performed before the film thickness of the plating layer formed on the surface of the microparticles is formed. The rotation of the chamber started 3 to 10 seconds after the film thickness of the electroplated layer formed on the surface of the microparticles was formed to a predetermined thickness. After the rotation of the processing chamber started 0.5 to 10 seconds, that is, it was formed on the surface of the microparticles. The energization time before the thickness of the plating layer is formed to a predetermined thickness is started in a short period of time. The method for producing conductive fine particles of the present invention 15 is used and the present invention 14 In the conductive fine particle manufacturing apparatus having the same conductive fine particle manufacturing method, the energization start time is longer than the initial stage of the plating step to prevent the bipolar phenomenon that easily occurs at the beginning of the plating step. The thickness of the electric ore layer formed on the surface of the surface is formed 3 to 10 seconds after the start of the rotation of the processing chamber. That is, in the initial stage of the ore deposit step, the energization start time is made longer to make the All particles move towards the cathode completely and contact the cathode to prevent the occurrence of bipolar phenomenon. Also, at the early stage of the plating step, since the bipolar phenomenon is not easy to occur when the current density is set low, the current density should be set to 0.1 ~ Ι, 〇Α / dm2. More preferably, 0.2 to 0.5 A / dm2. In the above-mentioned 15th invention, after the predetermined thickness of the electroplated layer formed on the surface of the fine particles is formed to a predetermined thickness, the rotation of the processing chamber is started ~ 10 seconds, That is, it is started in a shorter time than the energization time before the thickness of the plating layer formed on the surface of the fine particles is formed to a predetermined thickness. That is, if the fine particles are surfaced as the plating step proceeds The formation of a certain degree of plating layer, the specific gravity difference between the particles and the plating solution will become larger, because it can be changed into particles in a short time (please read the precautions on the back before filling this page)-1 ° Standards are applicable to Chinese National Standards (CNS) Λ4 Regulations (210_ × 297). ^ 5 9072 Α7 _ Β7 Five 'invention description (1) Move to the cathode, so the plating can be improved by making the starting time shorter than the beginning of the plating step. The efficiency β of the coating step At this stage, since the higher the current density, the higher the efficiency, so the current density should be set to 0.5 to 5, OA / dm2. More preferably, 1.0 to 3.0 A / dm2. As such, in the plating step By changing the plating conditions, it is possible to prevent the bipolar phenomenon at the beginning of the plating step and to efficiently form a plating layer. When the plating conditions are changed, when the film thickness of the plating layer formed on the surface of the fine particles is a predetermined value, the specific gravity of the fine particles becomes large at this time, and even if the start time of the electricity, that is, the time required for the fine particles to move, can be reduced to all the fine particles. The ground moves toward and contacts the cathode. However, since the moving speed of the fine particles varies depending on the particle size, the specific gravity difference between the fine particles and the plating solution, the increase of the specific gravity of the particles accompanying the growth of the coating, the viscosity of the plating solution, and the filtering speed of the plating solution, it is necessary to match the fine particles of the plating object. The particle diameter, the type of the plating solution, the number of rotations of the processing chamber, and the pore diameter of the porous body are appropriately determined. Employees of the Central Standards Bureau of the Ministry of Economic Affairs, Cooperative Cooperative Slaves (read the note on the back first, and then write this page) The particles used in the present invention 14 and 15 are not particularly limited, and examples include metal particles, organic resin particles, Inorganic fine particles and the like are taken as an example. When the above-mentioned organic resin fine particles or inorganic resin fine particles are used, it is preferable to form a conductive underlayer. The method for forming the above-mentioned conductive base layer is preferably an electroless plating method, but it is not limited thereto, and other well-known methods for imparting conductivity may be used for formation. The metal fine particles are not particularly limited, and examples thereof include iron, copper, silver, gold, tin, lead, platinum, nickel, titanium, cobalt, chromium, aluminum, zinc, tungsten, and alloys thereof. A Microparticles are not limited in particular, but can be chain-shaped. _ — —_____ _57 This paper size applies to Chinese National Standards (CNS M4 Regulations (210X29? Public;) 4 Printed by Central Consumers ’Cooperative Bureau of the Ministry of Economy 90 72 A7 -----— _B7 V. Description of the invention (jrT) " Microparticles composed of a compound, microparticles composed of a network polymer, microparticles made of thermosetting resin, microparticles composed of an elastomer, etc. as examples ^ The polymer is not particularly limited, and examples thereof include nylon, polyethylene, polypropylene, methylpentene polymer, polystyrene, polymethyl methacrylate, polyvinyl chloride, polyvinyl fluoride, polytetrafluoroethylene, and poly As examples, polyethylene terephthalate, polybutylene terephthalate, polysulfonate, polycarbonate, polypropylene fluorene, polyacetal, polyamidine, etc. Special restrictions include divinylbenzene, hexamethylene Benzene, divinyl ether, diethylene glycol, allyl methanol, alkylene diacrylate, oligo or poly (alkylene glycol) diacrylate, oligo or poly (alkylene glycol) dimethacrylate, Homopolymers of bridging reactive monomers such as alkylene triacrylate, alkylene trimethacrylate, alkylene tetraacrylate, alkylene tetramethacrylate, alkylene diacrylamide, or these bridging reactivity Copolymers of monomers and other polymerizable monomers are examples. Among them, divinylbenzene, hexamethylbenzene, divinyl ether, diethylene glycol, alkylene triacrylate, and alkylene tetraacrylate are preferred. The thermosetting resin is not particularly limited, and examples thereof include phenol · · formaldehyde resin, melamine · formaldehyde resin, benzoguanamine-formaldehyde resin, urea-formaldehyde resin, and epoxy resin. The above-mentioned elastomer is not particularly limited, and examples thereof include natural rubber and synthetic rubber. The material of the above-mentioned inorganic fine particles is not particularly limited, and examples thereof include silicon dioxide, silicon oxide, iron oxide, cobalt oxide, Zinc oxide, nickel oxide, As an example, violent alumina, alumina, etc. ____________58________ This paper rule is not applicable to the Chinese National Standard (CNS) Λ4 Regulation (210X29? Public Office) --------- Shenyi -------- ΪΤ ------ Gland (read the precautions on the back before writing this page) A7 459012 V. Description of the invention (ft) The particle size of the above microparticles should be 0.5-5000 # ra, more preferably 0.5 ~ 2500 # m, and more preferably Bu 1000 # m. Moreover, the coefficient of variation of the above fine particles should be 50% or less, more preferably 35% or less, even more preferably 20% or less, and most preferably 10% or less. The coefficient is based on the average quality and the standard deviation is expressed as a percentage, that is, represented by the equation. Coefficient of variation = (standard deviation of particle size / average quality of particle size) X Generally speaking, the moving speed of particles in a fluid based on the effect of centrifugal force depends on the centrifugal effect, the specific gravity difference between particles and liquid, the particle size, and the fluid's Viscosity varies. Therefore, in the condition that the centrifugal effect is constant, the specific gravity is poor, and the larger the particle size, the faster the moving speed. Therefore, the smaller the particle size of the object to be plated, the slower the particle moving speed. The microparticles are preferably β which has a large difference in specific gravity from the plating solution. The above-mentioned plating layer is not particularly limited, and may be gold, silver, copper, platinum, zinc, iron, tin, inscription, inscription, indium, osmium, chromium, zinc, zinc, etc. , Secret, wrong, cadmium, silicon, etc. as examples. These can be used individually or in combination of 2 or more types. Hereinafter, one embodiment of the conductive fine particle manufacturing method of the present invention 14 and the present invention 15 will be described with reference to the drawings. FIG. U shows an example of a conductive fine particle manufacturing apparatus suitable for use in the conductive fine particle manufacturing method of the present invention 14. 》 The conductive fine particle manufacturing device shown in FIG. 11 includes a disc-shaped base plate 10 fixed to the upper end portion of the vertical drive shaft, and a porous body 21 disposed on the outer periphery of the base plate 10 so that only a plating solution can pass therethrough. The contact ring 11 for conducting electricity on the porous body 21; the hollow cover 1 with an opening 8 in the upper center; formed on the outer periphery of the hollow cover 1 and the bottom plate 10 (Please read the precautions on the back before filling this page ) * 1T Foreword The printed paper of the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs of the People's Republic of China is applicable to China National Standards (CNS) Regulation 6 (210 × 297) 45 45 9 072 A7 B7 V. Description of the invention (/ ^ 1) The rotatable processing chamber 13 sandwiching the porous body 21 and the contact ring 11; flooding the plating solution from the opening 8 to the flooding pipe 6 of the processing chamber 13; for receiving the scattering from the holes of the porous body 21 Out 4 of the bath container; retention in the bath for discharge of the container 4 in the discharge pipe 7; plating solution from the contact with the electrode 8 of the opening portion 2 of the insertion. Further, in the conductive fine particle manufacturing device having such a structure, the contact ring is a cathode, the porous body 21 is a filter portion, and the electrode 2 is an anode. The plating solution passes through the porous body 21 due to the centrifugal force received by the rotation of the drive shaft 3, and the plating solution level in the processing chamber 13 is lowered. To supplement the plating solution, the supply pipe 6 for supplying the plating solution is used to supply the plating solution from the opening. The plating solution of the section 8 is supplied to the processing chamber 13 and the level sensor 5 is used to control the amount of the liquid so that the liquid surface of the processing chamber 13 is always in contact with the electrode 2a | In Fig. 11, 2 represents a positive electrode and is connected to the anode 2a. 9 stands for contact brush. The power supply for the electrodes is not shown. In this embodiment, the plating solution is supplied from the supply pipe 6 into the processing chamber 13, and then the microparticles having the conductive base layer formed therein are introduced from the opening 8 of the hollow cover 1 and dispersed in the processing chamber 13. The plating solution will fly out of the processing chamber 13 through the porous body 12 as the drive shaft 3 rotates, and the reduction will be replenished from the supply pipe 6. The other plating conditions are the same as those in ordinary plating. The porous body 21 is a filter-like porous body formed by plastic or ceramics with communicating bubbles, and the pore size adopted is such that a treatment liquid such as a plating solution can pass through, and particles and conductive particles cannot pass through. The upper surface of the multi-shaped substance holding body 22 is provided with a filter having a pore diameter through which only the plating solution can pass, and the scale is applicable to the Chinese National Standard (CNS) 6-4 gauge (210 × 2 @ 公 边) ---------) ^ Clothing ------ 1Τ ------ (Please read the precautions on the back before filling in the poor page) The Central Bureau of Standards of the Ministry of Economic Affairs, the Co-operation of the Ministry of Economic Affairs, Du Yin, 4D 9072 Industrial and consumer cooperatives print A7 B7 V. Invention Description (if) film 20. In order to form a more uniform plating layer, it is preferable to reverse or stop the rotation direction of the drive shaft 3 at regular intervals. The number of rotations and the form of operation may be the same or different during forward rotation and reverse rotation, and may be within the scope of the present invention. Next, an embodiment of the conductive fine particle manufacturing method of the present invention using the conductive fine particle manufacturing apparatus shown in FIG. 11 will be described with reference to the timing chart of the operating conditions shown in FIG. 2. First, the organic resin fine particles having an electroless nickel plating layer formed on a surface having a specific gravity of 1.23 and a particle size of 650 / zm are put into a processing chamber 13 of a Watt bath to which a specific gravity of the plating solution is 1.11. In this case, the specific gravity difference between the fine particles and the Watt bath was 0.05. Next, it took 1 second to accelerate the processing chamber 13. After reaching the peripheral speed of 226 m / min, the processing chamber 13 rotates at a constant speed. After entering the fixed-speed rotation for 3 seconds (4 seconds after the rotation of the processing chamber 13 starts, that is, the particle movement time is 4 seconds), the rectifier is turned on to start energization and perform plating. The power-on time is 5 seconds. After that, it takes 1 second to decelerate the processing chamber 13 and stop it for 1 second. This is regarded as a cycle. 'The processing chamber 13 is rotated in a reverse direction every 1 cycle to perform the plating step. Also, the porous body 21 in the conductive fine particle manufacturing apparatus used in this embodiment is a sheet-like porous holding body 22 having a pore diameter i0 # m of 6 mm in thickness formed by high-density polyethylene, and nylon is attached thereto. A filter sheet 20 having a pore diameter of 10 μm and a thickness of 10 μm is formed. The present invention 16 is a conductive fine particle, an anisotropic conductive adhesive using the conductive fine particle, and a conductive connection structure. The conductive fine particle of the present invention 16 has a particle diameter of 0.5 to 0.5. If the scale is applicable to the Chinese National Standard (〇 ^) 八 规 台 (210/297 office) --------- ^ ------ 1T ------ Gland. (Please first Read the note on the back of the page and fill in this page.) 45 9072 A7 B7 V. Description of the invention (· $) There are particles with undersize particles. Poor contact occurs. If it exceeds 5000 μm, it is limited to the above-mentioned range because fine conductive bonding cannot be performed. It is preferably 0.5 to 2500 Mm, more preferably 1 to 1000 #m, still more preferably 5-300 ym, and even more preferably W to 1 ⑽ # most preferably 20 ^ 50 β m β The conductivity of the present invention 16 The coefficient of variation of fine particles is 50% or less. The above coefficient of variation is expressed by the formula: (c / Dn) X 100 represents ° σ represents the standard deviation of the particle diameter 'Dn represents the number average particle diameter. If the above coefficient of variation exceeds 50%, particles will become non-uniform. 'When the electrodes are brought into contact with each other through conductive fine particles in the steps described below,' a large number of non-contact particles will be generated and a leakage current will easily occur between electrodes. ' Within range. It is preferably 35 ° or less, more preferably 20% or less, and even more preferably 10 ° /. Below, the best is 5% or less. The aspect ratio of the conductive fine particles of the present invention is less than I.5 β. The average aspect ratio of the above aspect ratio particles is divided by the average minor diameter. When the above aspect ratio is 1.5 or more, particles become non-uniform ' When the electrodes are in contact with each other through the conductive fine particles, a large number of non-contact particles are generated and a leakage current phenomenon is easily generated between the electrodes, so it is limited to the above range. It is less than 1.1 and more preferably less than i.05. According to the present invention, the particle size of the conductive fine particles, the aspect ratio, and the coefficient of variation described above are determined by observation with an electron microscope. (Converted) (Please read the notes on the back before writing this page)

、1T 經濟部中央標窣局员工消赍合作社印製 459072 A7 B7 五、發明説明（ί0) 之。 本發明16的導電性微粒子，只要是外表面經鑛敷的 粒子即可，並沒有特別的限定，例如可以是藉有機化合物 、樹脂、無機物等被覆者。 本發明16的導電性微粒子，若在夾在複數個電極間 的狀態下被按壓住，雖可使得電流從一電極流向另一電極 ，但因將外表面鍍敷，故可使連接時的電流容量變大。 上述鍍敷，宜爲使用貴金屬之鍍敷。不是使用貴金屬 之鍍敷時，若長期間的處理冷熱循環或高溫高濕狀態下， 在和電極的接觸面會產生氧化，連接電阻値會明顯地提高 ，有時會使可靠性降低。上述貴金屬以金、鉑、鈀爲較佳 〇 ，上述鍍敷，可使用融點300°C以下的低融點金屬、例 如銲錫、錫系合金等以實施鍍敷。此時，上述導電層，基 於導電性或易鍍敷等，宜爲使用鎳、銅、銀之無電解鍍敷 層。 要將本發明16的導電性微粒子的外表面鍍敷時，該 鍍敷宜爲電鍍，上述電鍍的方法沒有特別的限定，爲了形 成更均一的鍍敷，較佳爲使用外周部具陰極、具有設置成 和陰極不接觸的陽極之可旋轉的鍍敷裝置以實施電鍍。更 佳爲使用於外周部形成過濾部、可一面補充鍍液一面旋轉 的鍍敷裝置以實施電鍍。 上述鍍敷時，鍍膜厚只要爲0.001〜50//m即可β若未 滿0.001 則無法獲得充分的電容，若超過50 則無 _63___ 、張尺度適用中國國家摞準（CNS ) Λ4规格（210X297公兑） {讀先閱讀背面之注意事項再"'"本頁)Printed by the Consumers' Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs, 1T 459072 A7 B7 V. Description of Invention (ί0). The conductive fine particles of the present invention 16 are not particularly limited as long as they are mineral-coated particles on the outer surface. For example, they may be coated with an organic compound, resin, or inorganic substance. When the conductive fine particles of the present invention 16 are pressed while sandwiched between a plurality of electrodes, although an electric current can flow from one electrode to another electrode, the outer surface is plated, so the connection time can be reduced. The current capacity becomes larger. The above plating is preferably a plating using a precious metal. When not using noble metal plating, if long-term processing of cold and heat cycles or high temperature and high humidity conditions, oxidation will occur on the contact surface with the electrode, the connection resistance 値 will be significantly increased, and reliability may be reduced. The above precious metals are preferably gold, platinum, and palladium. For the above plating, plating can be performed using a low melting point metal having a melting point of 300 ° C or lower, such as solder, tin-based alloys, and the like. In this case, the above-mentioned conductive layer is preferably an electroless plating layer using nickel, copper, or silver, based on conductivity or easy plating. When the outer surface of the conductive fine particles of the present invention 16 is plated, the plating is preferably electroplating. The above-mentioned electroplating method is not particularly limited. In order to form a more uniform plating, it is preferable to use a cathode having an outer peripheral portion, The anode is provided with a rotatable plating device which is not in contact with the cathode to perform plating. It is more preferable to perform plating by using a plating device that forms a filter portion on the outer periphery and can rotate while replenishing the plating solution. In the above plating, the thickness of the coating film is only 0.001 ~ 50 // m. Β is less than 0.001, and sufficient capacitance cannot be obtained. If it exceeds 50, there is no _63___. 210X297)) (Read the precautions on the back before reading " '" this page)

-1T 婊 經濟部中央標隼局員工消费合作社印掣 經濟部中央標準局負工消费合作社印製 t)9072 五、發明説明（t ί) 法充分發揮基材的性能。更佳爲0.01〜l〇#m，再更佳爲 0.2~3#m。鍍膜厚的變動係數，基於爲了得出均一的粒子 ，宜爲20%以下、更佳爲1〇%以下 本發明16的導電性微粒子的基材沒有特別的限定， 可舉樹脂、無機粒子、金屬粒子、其等的混合物爲例。較 佳爲，Κ 値 200〜2〇〇〇lcgf/m2、更佳爲 300〜5001cgf/m2，回復 率10%以上、更佳爲50%以上，粒徑的變動係數5%以上， 長寬比未滿1.05。K値或回復係數低時，有時因衝擊或冷 熱循環等會引起接觸不良，相反地Κ値大時，有損傷電極 之虞。 本發明16之各向異性導電接著劑，可將本發明ι6的 導電性微粒子分散於絕緣性樹脂中以得出。上述各向異性 導電接著劑係包含各向異性導電膜、各向異性導電膠、各 向異性導電油墨等》 上述各向異性導電接著劑的結合劑樹脂沒有特別的限 定，可舉丙烯酸樹脂、乙烯-醋酸乙烯共聚物樹脂、苯乙烯 -丁二烯嵌段共聚物樹脂等熱可塑性樹脂，具縮水甘油基之 單體或寡聚物、異氰酸酯等硬化劑、硬化性樹脂組成物等 可藉熱或光以硬化的組成物等。 上述各向異性導電接著劑的塗膜厚宜爲10〜數百以扣 0 使用本發明16的各向異性導電接著劑之連接對象， 可舉基板、半導體等的裝置爲例。其等的表面上分別形成 有電極部。使用本發明I6的各向異性導電接著劑而連接的 國家標隼{ CNS ) Λ4规格（2丨ΟΧ — — ---------,i%------ΪΤ------腺 (請先閱讀背面之注意事項再济爲本頁) 459072 A7 B7_____ 五 '發明说明（ 構造體也是本發明16之一。 上述基板可分成軟板和硬板β上述軟板是使用50〜500 Am厚的樹脂片，上述樹脂片可舉聚亞胺' 聚醯胺、聚酯 、聚颯等爲例。 上述硬板，可分成樹脂製和陶瓷製品。作爲上述樹脂 製品，可舉玻璃纖維強化環氧樹脂 '酣醛樹脂、纖維素纖 維強化酚醛樹脂等爲例。作爲上述陶瓷製品’可舉二氧化 矽、氧化鋁等爲例。 上述基板構造可爲單層的，爲增加單位面積的電極數 ，例如使用多層基板-即藉由形成穿孔等方法以使所形成的 複數層進行電連接亦可。 上述裝置沒有特別的限定，可舉電晶體、二極體、1C 、LSI等半導體的能動裝置，電阻、電容、水晶振盪器等 受動裝置等爲例。 上述基板、裝置的表面形成有電極。上述電極的形狀 沒有特別的限定，可舉條紋狀、點狀、任意形狀等爲例。 上述電極的材質可舉金、銀、銅、錬、鈀、碳、鋁、 ΙΤΟ等爲例。爲降低接觸電阻，可使用在銅、鎳等上方再 被覆有金者β 電極的厚宜爲0·1〜1〇〇μηι，電極寬宜爲1〜500/zm。 本發明Ιό的導電性微粒子，可在本發明16的各向異 性導電接著劑形成無規地分散，又配置於特定的位置亦可 β無規分散時，可進行通常、汎用的電極接合，特定配置 時’可效率佳地進行電接合。 ----------.¾------ir.------1 (讀先閱讀背面之注意事項再填.寫本I) 經濟部中央標準局月工消费合作社印製 { cns ) ----- 經濟部中央標準局負工消费合作社印製 459072 五、發明説明（t$) 使用本發明16的導電性微粒子以將面對面的二電極 電連接之方法，也可以是將各向異性導電接著劑或結合劑 樹脂和導電性微粒子分開使用之方法。 本發明16的各向異性導電接著劑之使用方法，例如 在表面形成有電極之基板或裝置上，將本發明的各向異性 導電膜裝載後’再放上具有另一個電極面之基板或裝置， 加熱加壓之。取代各向異性導電膜的使用，可藉由網版印 刷或撒布器等印刷方法而使用既定量的各向異性導電膠。 上述加熱、加壓，可使用具加熱器之壓接機或接合器等。 也可以採用不用上述各向異性導電膜或各向異性導電 膠之方法，例如，在透過導電性微粒子而貼合之二電極部 間的間隙注入液狀的結合劑後令其硬化之方法等。依上述 般所得之連接構造體中，由於導電性微粒子係使用導電性 優異的電鍍粒子，故可使得大的電流安定地流通。 又藉由使用具適度的平均粒徑之粒子，相對向的電極 間不致產生漏電流，又由於具有經限定的變動係數或長寬 比，故透過導電性微粒子而使電極彼此接觸時，幾乎不致 產生未接觸的粒子而不易於電極間發生漏電流現象。 又’將貴金屬或低融點金屬鍍敷的情況下，即使長期 間處於冷熱循環或高溫高濕狀態，和電極的接觸面等也不 致發生氧化，而不致造成明顯的連接電阻値昇高或可靠性 變低，故在這種條件下也可以確保長期的可靠性。 以下係說明本發明17的電子電路裝置等。以下的「 本發明」係代表依本發明Π之電子電路裝置及和其有關的 -------------- 本紙張尺度適用中國國家標準（CNS)A4现# (210X29祕赴） - 衣 - I. 訂 . · {諳先閱讀背面之注意事項再^€本頁) 經濟部中央標_局員工消f合作社印裝 45 9072 A7 __ 五、發明説明 電子電路基扳、電子電路元件等。 本說明書中之「電子電路兀件」係代表形成有電極之 半導體元件’可舉二極體、電晶體、ic、LSI、SCR(砍控制 整流器）、光電元件、太陽電池、發光二極體(1^0)等β特 別是’作爲1C ’可舉裸晶片 '封裝型Ic、ic尺寸封裝物 (CSP)等爲例’也包含和電阻、電容、感應器、水晶振盪器 等半導體以外的組合所製作出的組合1C、多晶片模組 (MCM)#。 上述電子電路兀件之電極的製作，例如可使用蒸鑛法 或濺鍍法以進行’作爲電極材質，可舉鋁、銅等金屬、鎳 鉻-金、鎳路-銅、絡·金、鎳鉻-銷-金、鐵鉻_銅屬_金、鉬· 金、鈦-鈀-金、鈦·鉑-金等合金爲例。 .上述電子電路7C素之電極配置，係例如外圍型、區域 型或其等的混合型β 本說明書中之「電子電路基板」’係代表形成有電極 之用以載置上述電子電路元件之基板，可舉以紙酚醛樹脂 、玻璃環氧樹脂、玻璃聚亞胺樹脂爲基底之印刷電路板， 聚亞胺、飽和聚酯樹脂所構成之軟基板，陶瓷基板等爲例 。又’也包含用以搭載裸晶片之樹脂製、陶瓷製等的封裝 〇 本說明書中之「電子電路裝置」’係由載置有上述電 子電路元件的電子電路基板構成，而供作電子領域的裝置 用’作爲製作時的封裝方式，較佳爲使用反扣晶片、BGA 等。 、張尺度適用中關家料（CNS 2丨G X 29¾7公犮) (請先閱讀背面之注意事項再填貪本頁) .裝-1T 印 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. T) 9072 V. Description of Invention (t) The method makes full use of the properties of the substrate. It is more preferably 0.01 to 10 #m, and even more preferably 0.2 to 3 #m. The coefficient of variation of the coating thickness is preferably 20% or less, and more preferably 10% or less based on the uniform particles, and the substrate of the conductive fine particles of the present invention 16 is not particularly limited. Examples include resins, inorganic particles, and metals. Examples are particles and mixtures thereof. Preferably, κ 200 ~ 2000lcgf / m2, more preferably 300 ~ 5001cgf / m2, a recovery rate of 10% or more, more preferably 50% or more, a coefficient of variation of the particle size of 5% or more, and an aspect ratio Under 1.05. If K 値 or the recovery coefficient is low, contact failure may occur due to impact or cold / heat cycles. On the contrary, if K 値 is large, the electrode may be damaged. The anisotropic conductive adhesive of the present invention 16 can be obtained by dispersing the conductive fine particles of the present invention ι6 in an insulating resin. The anisotropic conductive adhesive agent includes an anisotropic conductive film, an anisotropic conductive adhesive, an anisotropic conductive ink, and the like. The binder resin of the anisotropic conductive adhesive is not particularly limited, and examples thereof include acrylic resin and ethylene. -Thermoplastic resins such as vinyl acetate copolymer resins, styrene-butadiene block copolymer resins, monomers or oligomers with glycidyl groups, hardeners such as isocyanates, hardening resin compositions, etc. Light is a hardened composition and the like. The thickness of the coating film of the anisotropic conductive adhesive is preferably 10 to hundreds. The connection target using the anisotropic conductive adhesive of the present invention 16 is exemplified by devices such as substrates and semiconductors. Electrode portions are formed on these surfaces. National standard {CNS} Λ4 specification (2 丨 〇χ —----------, i% ------ ΪΤ ---) connected using the anisotropic conductive adhesive of I6 of the present invention --- Gland (please read the precautions on the back before turning to this page) 459072 A7 B7_____ Five 'invention description (the structure is also one of the present invention 16. The above substrate can be divided into a soft board and a hard board β The above soft board is used 50 ~ 500 Am thick resin sheet. The above resin sheet can be exemplified by polyimide, polyimide, polyester, polyfluorene, etc. The hard board can be divided into resin and ceramic products. As the above resin products, Glass fiber-reinforced epoxy resins such as aldehyde resins, cellulose fiber-reinforced phenol resins, etc. are used as examples. The above-mentioned ceramic products can be exemplified by silicon dioxide, alumina, etc. The substrate structure can be a single layer, which is an increase unit The number of electrodes of the area can be, for example, a multilayer substrate-that is, a method of forming a perforation to electrically connect the formed multiple layers. The above-mentioned device is not particularly limited, and can be a transistor, a diode, 1C, LSI, etc. Active devices for semiconductors, resistors, capacitors, crystal oscillators, etc. An example is a driven device. An electrode is formed on the surface of the substrate and the device. The shape of the electrode is not particularly limited, and examples include stripe, dots, and arbitrary shapes. The material of the electrode may be gold, silver, or copper. For example, yttrium, palladium, carbon, aluminum, ΙΤΟ, etc. In order to reduce the contact resistance, the thickness of the β electrode, which is coated with gold on copper, nickel, etc., should be 0.1 to 100 μm, and the electrode width should be suitable. It is 1 to 500 / zm. The conductive fine particles of the present invention can be randomly dispersed when the anisotropic conductive adhesive of the present invention 16 is formed, and when it is arranged at a specific position, and β can be randomly dispersed, it can be performed normally. And general-purpose electrode bonding, in a specific configuration, 'electric bonding can be performed efficiently. ----------. ¾ ------ ir .------ 1 (read first read the back Note: Please fill in again. Written copy I) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Consumers' Cooperatives {cns) ----- Printed by the Central Standards Bureau of the Ministry of Economics, printed by the Consumers ’Cooperatives 459072 5. Instructions for Invention (t $) Use this According to the invention 16, the method of electrically connecting the conductive fine particles to the two electrodes facing each other may be Method for separately using anisotropic conductive adhesive or binder resin and conductive fine particles. The method for using the anisotropic conductive adhesive according to the present invention 16 is, for example, placing the anisotropy of the present invention on a substrate or a device having electrodes formed on its surface. After the conductive film is loaded, a substrate or device having another electrode surface is placed on it and heated and pressed. Instead of using an anisotropic conductive film, a predetermined amount of each can be used by printing methods such as screen printing or a spreader. Anisotropic conductive adhesive. The above heating and pressing can be used as a crimping machine or an adapter for a heater. It is also possible to use a method that does not use the above-mentioned anisotropic conductive film or anisotropic conductive adhesive. A method of injecting a liquid binding agent into a gap between two electrode portions bonded with fine particles and then hardening it. In the connection structure obtained as described above, since the electroconductive fine particles are plated particles having excellent conductivity, a large current can be stably flowed. By using particles with a moderate average particle size, no leakage current is generated between the opposing electrodes, and due to the limited coefficient of variation or aspect ratio, it is almost impossible to contact the electrodes with each other through conductive fine particles. The generation of non-contact particles is not likely to cause leakage current between electrodes. In the case of noble metal or low melting point metal plating, even if it is in a hot and cold cycle or a high temperature and high humidity state for a long time, the contact surface with the electrode will not be oxidized, and it will not cause a significant increase in connection resistance or reliability. Low performance, so long-term reliability can be ensured under these conditions. The following is a description of the electronic circuit device and the like according to the present invention 17. The following "Invention" represents the electronic circuit device according to the present invention and its related -------------- This paper standard is applicable to China National Standard (CNS) A4 Now # (210X29 Secret visit)-Clothing-I. Order. · {谙 read the precautions on the back and then ^ € this page) Ministry of Economic Affairs Central Standard _ Bureau Staff Consumer Cooperative Cooperative Printing 45 9072 A7 __ 5. Description of the invention Electronic circuit components, etc. "Electronic circuit elements" in this specification represent semiconductor elements formed with electrodes. Examples include diodes, transistors, ICs, LSIs, SCRs (chopped control rectifiers), photovoltaic elements, solar cells, and light-emitting diodes ( 1 ^ 0), etc. β, especially 'as 1C' can be bare chip 'package type IC, IC size package (CSP) etc. as examples' also includes combinations other than semiconductors such as resistors, capacitors, inductors, crystal oscillators, etc. The produced combination 1C, multi-chip module (MCM) #. For the production of the electrodes of the above-mentioned electronic circuit components, for example, a vapor deposition method or a sputtering method can be used as the electrode material, and metals such as aluminum and copper, nickel-chromium-gold, nickel-copper, copper, gold, and nickel can be mentioned. Examples of the alloys include chromium-pin-gold, iron chromium_copper_gold, molybdenum · gold, titanium-palladium-gold, titanium · platinum-gold and the like. The electrode arrangement of the above-mentioned electronic circuit 7C element is, for example, a peripheral type, an area type, or a hybrid type β thereof. The "electronic circuit board" in this specification refers to a substrate on which electrodes are formed to mount the above-mentioned electronic circuit components. For example, printed circuit boards based on paper phenolic resin, glass epoxy resin, and glass polyimide resin, soft substrates made of polyimide and saturated polyester resin, and ceramic substrates can be taken as examples. It also includes packages made of resin, ceramics, etc. for mounting bare chips. "Electronic circuit devices" in this specification are made of electronic circuit substrates on which the above-mentioned electronic circuit elements are placed, and are intended for use in electronics. The device uses' as a packaging method at the time of manufacture, and it is preferable to use a buckle chip, BGA, or the like. The Zhang scale is suitable for Zhongguan household materials (CNS 2 丨 G X 29¾7) 犮 (Please read the precautions on the back before filling this page).

、1T A7 459072 五、發明説明 本發明Π係將電子電路元件和電子電路基板電連接 所構成的電子電路裝置，其特徵可以是，上述連接係使用 於球狀彈性基材粒子的表面設有導電金屬層所構成之積層 導電性微粒子以進行，於上述電子電路元件的電極部和上 述電子電路基板的電極部之連接部，對各連接部係藉由複 數個上述積層導電性微粒子以電連接。特徵也可以是，上 述連接係使用於球狀彈性基材粒子的表面設有導電金屬層 、又於上述導電性金屬層的表面設有低融點金屬層所構成 之重積層導電性微粒子以進行，於上述電子電路元件的電 極部和上述電子電路基板的電極部之連接部，對各連接部 係藉由複數個上述積層導電性微粒子以電連接β 又，本發明i7之導電金屬層的厚度(t :單位mm)係位 於下述[1式]所代表的範圔內。1T A7 459072 V. Description of the invention The electronic circuit device of the present invention is an electronic circuit device which electrically connects an electronic circuit element and an electronic circuit substrate, characterized in that the above-mentioned connection system is used for the surface of a spherical elastic substrate particle to be electrically conductive. The conductive fine particles are laminated by a metal layer, and the connection portion between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate is electrically connected to each of the connection portions by a plurality of the laminated conductive fine particles. The connection system may be characterized in that the above-mentioned connection is performed by using a conductive layer with a conductive metal layer provided on the surface of the spherical elastic substrate particles and a low melting point metal layer provided on the surface of the conductive metal layer. The connection portion between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit board is electrically connected to each connection portion through a plurality of the laminated conductive fine particles, and the thickness of the conductive metal layer of the i7 of the present invention. (t: unit mm) is within the range represented by the following [Formula 1].

PxD/a<t<0.2XD [1 式] 式中，P代表壓力單位的常數之〇.7Kg/mm2，D代表 彈性基材粒子的直徑（單位：mm)，σ代表導電金屬層形成 用之金屬材料的抗張強度（單位：Kg/mm2)，係將厚度 0.5〜2mm之片狀試料藉抗張試驗機於伸張速度10mm/分下 測定時之抗張強度。 本發明17係將電子電路元件和電子電路基板電連接 所構成的電子電路裝置，其特徵可以是，上述連接係使用 於球狀彈性基材粒子的周圍設有導電金屬層所構成之積層 導電性微粒子以進行，於上述電子電路元件的電極部和上 述電子電路基板的電極部之連接部，對各連接部係藉由複 ___ 、張尺度適用中國國家標準（CNS ) Λ4规祜（2ί〇Χ 297公焓） ---------餐------II------_嫁 (請先閱讀背面之注意事項再"寫本頁) 經濟部中央標隼局負工消費合作社印製 經濟部中央標準局員工消费合作社印製 459072 五、發明説明（仏） 數個上述積層導電性微粒子以電連接。特徵也可以是，i 述連接係使用於球狀彈性基材粒子的周圍設有導電金 、又於上述導電性金屬層的周圔設有低融點金屬層所; 之重積層導電性微粒子以進行，於上述電子電路元件的胃 極部和上述電子電路基板的電極部之連接部，對各建接部 係藉由複數個上述積層導電性微粒子以電連接β 本發明I7中係使用積層導電性微粒子及/或重镇墙_ 電性微粒子β本說明書中，積層導電性微粒子及重壞墙 電性微粒子也可以總稱爲導電性微粒子。上述積層導_,& 微粒子係球狀的彈性基材粒子111及導電金屬層2樽成 39)〇上述重積層導電性微粒子係球狀的彈性基材粒子lu 、導電金屬層222及低融點金屬層333構成(圖40) ^ .上述球狀彈性基材粒子，只要是具彈力性的材料即$ 而沒有特別的限定，可舉樹脂材料或有機、無機混合材_ 所構成的粒子等爲例。上述樹脂材料沒有特別的限定，％ 舉聚苯乙烯、聚甲基丙烯酸甲酯、聚乙烯、聚丙烯、聚對 苯二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、顯風、聚碳 酸酯、聚醯胺等線狀聚合物等爲例；又可舉將二乙烯苯、 六甲苯 '二乙烯醚、二乙«、烯丙基甲醇、烷撐二丙燥 酸酯、寡或聚(烷撐二醇)二丙烯酸酯、寡或聚(烷撐二醇)二 甲基丙烯酸酯、烷撐三丙烯酸酯、烷撐三甲基丙烯酸酯、 烷撐四丙烯酸酯、烷撐四甲基丙烯酸酯、烷撐二丙烯醯胺 、兩末端丙烯基變性之聚丁二烯寡聚物單獨或和其他聚合 性單體聚合所得之網狀聚合物等爲例。 ---；-—----62_____ 、决尺度適用中國國家標準（〇^15)八4现柏{210>< 297公处） ----------^装------1T------Μ r請先閱靖背面之注意事唄再堺碎本頁〕 經濟部中央標隼局員工消费合作社印製 A7 B7 五、發明説明（^) 等爲例》 作爲上述樹脂材料構成的粒子沒有特別的限制，可舉 酚-甲醛系樹脂、三聚氰胺-甲醛系樹脂、苯並鳥糞胺-甲醛 系樹脂、尿素-甲醛系樹脂熱硬化性樹脂等爲例。 作爲上述有機、無機混合材料，例如可使用，將於側 鏈具有烯丙基之丙烯酸酯或甲基丙烯酸酯和苯乙烯、甲基 丙烯酸甲酯等乙烯基單體的共聚物製作後，令烯丙基縮合 反應所得者，在有機聚合物的共存下令四乙氧基矽烷、三 乙氧基矽烷、二乙氧基矽烷溶膠凝膠反應後，於低溫下進 行燒成而另有機成分殘留者等。 上述球狀彈性基材粒子之粒徑宜爲5〜700//m，更佳 爲 10~150 μ m 〇PxD / a < t < 0.2XD [Formula 1] In the formula, P represents a constant of pressure unit of 0.7 Kg / mm2, D represents the diameter of the elastic substrate particles (unit: mm), and σ represents the conductive metal layer formation. The tensile strength of a metal material (unit: Kg / mm2) refers to the tensile strength when a sheet-like sample with a thickness of 0.5 to 2 mm is measured by a tensile tester at a tensile speed of 10 mm / min. The 17th aspect of the present invention is an electronic circuit device constituted by electrically connecting an electronic circuit element and an electronic circuit substrate, wherein the above-mentioned connection is used for a layer of conductivity formed by a conductive metal layer provided around a spherical elastic substrate particle. The fine particles are processed, and the connecting portion of the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate is applied to the connecting portion by applying the Chinese National Standard (CNS) Λ4 Regulations (2ί) to each of the connecting portions. Χ 297 enthalpy) --------- Meal ------ II ------_ Marriage (Please read the precautions on the back before writing this page) Central Ministry of Economic Affairs Printed by the Office of the Consumer Cooperative Cooperative, printed by the Central Standards Bureau of the Ministry of Economy, and printed by the Consumer Cooperative of the Ministry of Economic Affairs. 459072 5. Description of the Invention (i) Several of the above-mentioned laminated conductive particles are electrically connected. The characteristic may be that the connection system i is used to provide conductive gold around the spherical elastic substrate particles, and a low melting point metal layer is provided around the conductive metal layer; The connection portion between the stomach electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate is electrically connected to each of the connection portions through a plurality of the laminated conductive fine particles β. In the present invention I7, the laminated conductive fine particles are used And / or heavy wall_electric fine particles β In this specification, laminated conductive fine particles and severely damaged wall fine particles may be collectively referred to as conductive fine particles. The above-mentioned laminated layer is a spherical elastic substrate particle 111 of a microparticle system and the conductive metal layer is 39). The above-mentioned laminated layer is a spherical elastic substrate particle lu of a conductive microparticle system, a conductive metal layer 222, and a low melting layer. The point metal layer 333 is constituted (Fig. 40). The spherical elastic substrate particles are not limited as long as they are elastic materials, such as particles made of resin materials or organic and inorganic mixed materials. As an example. The above resin material is not particularly limited, and examples thereof include polystyrene, polymethyl methacrylate, polyethylene, polypropylene, polyethylene terephthalate, polybutylene terephthalate, sensible wind, Examples of linear polymers such as polycarbonate and polyamide include divinylbenzene, hexamethylbenzene 'divinyl ether, diethyl «, allyl alcohol, alkylene dipropionate, oligomeric or Poly (alkylene glycol) diacrylate, oligo or poly (alkylene glycol) dimethacrylate, alkylene triacrylate, alkylene trimethacrylate, alkylene tetraacrylate, alkylene tetramethyl Examples are methacrylic acid esters, alkylene diacrylamide, and polymerized polybutadiene oligomers at both ends alone or with other polymerizable monomers. ---; ------- 62_____, the decision standard is applicable to the Chinese national standard (〇 ^ 15) 八 4 白 柏 {210 > < 297 office) ---------- ^ equipment- ---- 1T ------ M r, please read the notice on the back of Jing first, and then smash this page.] A7 B7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. Examples "The particles made of the resin material are not particularly limited, and examples thereof include phenol-formaldehyde resin, melamine-formaldehyde resin, benzoguanamine-formaldehyde resin, urea-formaldehyde resin thermosetting resin, and the like. . As the above-mentioned organic and inorganic mixed material, for example, an acrylic or methacrylic acid ester having an allyl side chain and a vinyl monomer such as styrene or methyl methacrylate can be used to prepare an olefin. Those who obtained the propyl condensation reaction, and reacted with tetraethoxysilane, triethoxysilane, diethoxysilane sol-gel in the coexistence of an organic polymer, and then calcined at a low temperature with residual organic components. . The particle size of the spherical elastic substrate particles is preferably 5 to 700 // m, and more preferably 10 to 150 μm.

.上述球狀彈性基材粒子之粒子徑分布，宜爲變動係數 [(標準偏差)/(平均粒子徑）Xl〇〇]5%以下，3%以下更佳。 上述球狀彈性基材粒子之熱傳導率宜爲〇.3〇W/m‘K 以上。 本發明17所用之導電性微粒子，在具有下述I：1式]所 代表之導電金屬層的厚度(t:單位mm)時可發揮良好的性 能。 PXD/a<t<0.2XD [1 式] 式中，P代表壓力單位的常數之l.〇Kg/mm2 ’ D代表 彈性基材粒子的直徑（單位：mm)，σ代表導電金屬層形成 用之金屬材料的抗張強度（單位：Kg/mm2)，係將厚度 0.5〜2mm之片狀試料藉抗張試驗機於伸張速度l〇mm/分下 _____2Q____—--- 本紙張尺度適用中國國家標嗥（CNS ) Λ4规棉（210X297公势） ----------1 裝------1T------# (請先閱讀背面之注意事項再玢舄本頁) 經濟部中央梂準局員工消资合作社印製 459072 A7 __B7_ 五、發明説明U妁 測定時之抗張強度。 亦即，若上述導電金屬層的厚爲PxD/σ以下，上述導 電性金屬層，將無法抗拒加熱時所產生之上述彈性基材粒 子的熱膨脹而產生裂紋，或引起疲勞破壞等而造成性能變 差β另一方面，若上述導電金屬層的厚爲0.2XD以上，相 對於後述之上述導電性微粒子所承受的剪切應力，將不易 產生可使上述球狀彈性基材粒子回復之彈性剪切變形，結 果，對上述導電性微粒子的導電金屬層和電子電路元件及 導電電路基板的連接部分會施加過大的力，而使連接可靠 性減低》 上述導電金屬層的厚t之下限値由於以PxD/σ代表， 故和上述導電金屬層的抗張強度成反比，上述抗張強度越 大則其下限値越小。形成鎳構成的導電金屬層之情形下， 由於抗張強度約爲85Kg/mm2，D爲lOOym時，PXD/σ約 爲 0.0012mm。 構成上述導電金屬層之金屬的種類沒有特別的限定， 較佳爲使用以擇自鎳、鈀、金、銀、銅、鉑、鋁所構成的 至少一者爲成分者。 上述導電金屬層係由複數金屬層構成時，和單一金屬 層構成時相較下，可得更好的結果。 上述導電金屬層之形成方法，可使用真空蒸鍍、濺鍍 等乾式鍍敷法，電鍍等濕式鍍敷法。特別是以使用濕式鍍 敷法較佳，將藉無電解鍍敷之金鹿層及藉電鍍之金濁層組 合時，可得最佳的結果。 ---------，裝------1Τ------.嫁 (請先閱讀背面之注意事項再％本頁) 本紙張尺度適用中國國家標準（CNS ) Λ4現拍（21〇Χ2!Π公兑） 459072 A7 五 B7 、發明説明 上述電鍍，可使用圖41所示之鍍敷裝置之進行。亦 即所使用的電鍍裝置係具有：固定於垂直驅動軸的上端部 之圓盤狀底板；配置於上述底板的外周上面之僅鍍液可通 過之多孔體；配置於上述多孔體上面之通電用的接觸環； 中空罩，於上部中央具有開口部之圓錐台狀的罩之上端部 接合孔徑相同於開口徑之中空圓筒，該中空圓筒的上端部 係朝中空圓筒內壁側回折；彤成於上述中空罩的外周部與 前述底板間之夾住上述多孔體和接觸環之可旋轉的處理室 :將鍍液從上述開口部供給至上述處理室之供給管；用於 接收從上述多孔體的孔飛散出的鍍液之容器；用以排出儲 留於上述容器中的鏟液之排出管；從上述開口部***之接 觸鍍液用的電極。預先藉前處理，例如將施加無電解鍍敷 處理之上述球狀彈性基材粒子置入上述處理室內，於上述 處理室內一面供給鍍液一面通電，以使上述處理室以其旋 轉軸爲中心旋轉，藉由此鍍敷步驟以於粒子表面形成電鍍 層。 上述低融點金屬層，較佳爲上述球狀彈性基材粒子的 粒子徑爲3〜50%的厚度。若超過50%，不僅上述導電性微 粒子的彈力會變低，有時在低融點金屬層融解時，會在水 平方向移動，而在鄰接的電極部間產生短路現象β相反地 ，若上述低融點金屬層的厚不滿3%，有時會產生上述導電 性微粒子之導電金屬層和電子電路元件或導電電路基板的 電極部的連接強度微弱之問題。 上述低融點金屬層，可使用融點260°C以下的金屬以 (請先閱讀背面之注意事項再步為本頁) 訂 經濟部中央標準局員工消贤合作社印焚 適用中國國家榇率（CNS ) Λ4規格（210X297公兑） 經濟部中央標準局員工消费合作社印製 459072 A7 B7 五、發明説明Ο 形成出。上述低融點金颶，可舉擇自錫、鉛、鉍、銀、鋅 、銦、銅所構成群中之1種以上的元素爲例。上述低融點 金屬層是使用合金層時，較佳爲以錫作爲主成分；又以錫 爲主成分，並包含擇自鉛、鉍、銀、鋅、銦、銅所構成群 中之1個以上的元素爲最佳。上述低融點金屬層可由複數 金屬層構成。 上述低融點金層之形成可使用無電解鍍敷、電鍍等濕 式鍍敷法，特別是以使用電鍍法較佳，又使用上述電鍍裝 置爲更佳。 其次，說明使用上述導電性微粒子之電子電路裝置的 製造方法β 使用於上述球狀彈性基材粒子的周圔設有導電金屬層 的積層導電性微粒子，以製造電子電路元件及電子電路基 板構成的電子電路裝置時，在上述電子電路元件、電子電 路基板的任一者之電極部上配設導電接著劑或銲錫膏所構 成之導電材後，將上述導電性微粒子載置於電極部’藉加 熱以使上述導電性微粒子的導電金屬層和電極部電連接。 圖41係顯示載置有積層導電性微粒子之電子電路元件的模 式圖。圖42係顯示載置有積層導電性微粒子之電子電路基 板的模式圖。 接著，在另一個電子電路元件、電子電路基板的電極 部上配設導電接著劑或銲錫膏所構成之導電材後’重疊於 已接合好的上述導電性微粒子，藉由加熱以進行電連接。 此製造步驟中，由於不用高壓力’放不致損及1C晶片的性 ___33---------- <張尺度適用中國國家榡準（CNS ) Λ4規枱（210X29*?公兑） (請先閱讀背面之注意事項再读爲本頁)The particle diameter distribution of the spherical elastic substrate particles is preferably a coefficient of variation [(standard deviation) / (average particle diameter) X 100] 5% or less, more preferably 3% or less. The thermal conductivity of the spherical elastic substrate particles is preferably 0.30 W / m'K or more. The conductive fine particles used in the present invention 17 exhibit good performance when the thickness (t: unit mm) of the conductive metal layer represented by the following formula (I: 1) is obtained. PXD / a < t < 0.2XD [Formula 1] In the formula, P represents a constant of a unit of pressure of 1.0 kg / mm2 'D represents the diameter (unit: mm) of the elastic substrate particles, and σ represents the conductive metal layer formation The tensile strength of metal materials (unit: Kg / mm2) is a sheet test with a thickness of 0.5 ~ 2mm by a tensile tester at a stretching speed of 10mm / min _____ 2Q ____------ This paper scale is applicable to China National standard (CNS) Λ4 gauge cotton (210X297 public power) ---------- 1 installed ------ 1T ------ # (Please read the precautions on the back before you 玢(This page) Printed by the Consumers' Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs, 459072 A7 __B7_ V. Description of the invention The tensile strength when measuring U 妁. That is, if the thickness of the conductive metal layer is equal to or less than PxD / σ, the conductive metal layer cannot resist the thermal expansion of the elastic substrate particles generated during heating to cause cracks, or cause fatigue damage to cause performance changes. Difference β On the other hand, if the thickness of the conductive metal layer is 0.2XD or more, it will be difficult to generate elastic shear that can recover the spherical elastic substrate particles with respect to the shear stress that the conductive fine particles will be described later. As a result of deformation, excessive force is applied to the conductive metal layer of the conductive fine particles and the connection portion of the electronic circuit element and the conductive circuit substrate, thereby reducing the connection reliability. The lower limit of the thickness t of the conductive metal layer is due to the PxD / σ represents that it is inversely proportional to the tensile strength of the conductive metal layer. The larger the tensile strength, the smaller the lower limit 値. When a conductive metal layer made of nickel is formed, the tensile strength is about 85 Kg / mm2, and when D is 100 μm, PXD / σ is about 0.0012 mm. The type of the metal constituting the conductive metal layer is not particularly limited, and it is preferable to use a component selected from the group consisting of at least one selected from nickel, palladium, gold, silver, copper, platinum, and aluminum. When the conductive metal layer is composed of a plurality of metal layers, better results can be obtained than when the conductive metal layer is composed of a single metal layer. As the method for forming the conductive metal layer, a dry plating method such as vacuum evaporation or sputtering, or a wet plating method such as electroplating can be used. In particular, it is better to use a wet plating method. When a gold deer layer by electroless plating and a gold haze layer by electroplating are combined, the best results can be obtained. ---------, installed ------ 1Τ ------. Marriage (please read the precautions on the back first and then% this page) This paper size applies Chinese National Standard (CNS) Λ4 Now shot (21〇 × 2! Π exchange) 459072 A7 Five B7, description of the invention The above electroplating can be performed using the plating device shown in FIG. 41. That is, the electroplating device used has: a disk-shaped bottom plate fixed to the upper end of the vertical drive shaft; a porous body arranged on the outer periphery of the bottom plate only through which the plating solution can pass; and an electric current placed on the porous body. A hollow cover, the upper end of which has a conical frustum-shaped cover with an opening in the upper part of the joint with the same diameter as the opening diameter of the hollow cylinder, the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; Tongcheng is a rotatable processing chamber sandwiching the porous body and contact ring between the outer periphery of the hollow cover and the bottom plate: a supply pipe for supplying a plating solution from the opening to the processing chamber; A container for the plating solution scattered from the holes of the porous body; a discharge tube for discharging the shovel solution stored in the container; and an electrode for contacting the plating solution inserted through the opening. By pretreatment in advance, for example, the spherical elastic substrate particles to which electroless plating is applied are placed in the processing chamber, and the plating solution is supplied to the processing chamber while being energized, so that the processing chamber is rotated around its rotation axis. Through this plating step, a plating layer is formed on the surface of the particles. The low melting point metal layer preferably has a particle diameter of the spherical elastic substrate particles having a thickness of 3 to 50%. If it exceeds 50%, not only the elasticity of the conductive fine particles will be reduced, but when the low melting point metal layer is melted, it may move in the horizontal direction, and a short-circuit phenomenon may occur between adjacent electrode parts. The thickness of the melting point metal layer is less than 3%, which may cause a problem that the connection strength between the conductive metal layer of the conductive fine particles and the electrode portion of the electronic circuit element or the conductive circuit substrate is weak. For the above low melting point metal layer, metals with a melting point below 260 ° C can be used (please read the precautions on the back before proceeding to this page). Order the Chinese National Standards for the China Union Standards Cooperatives for employees of the Central Standards Bureau of the Ministry of Economic Affairs ( CNS) Λ4 specification (210X297). Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 459072 A7 B7 V. Description of the invention 〇 Formed. The above-mentioned low melting point hurricane can be exemplified by one or more elements selected from the group consisting of tin, lead, bismuth, silver, zinc, indium, and copper. When the above-mentioned low-melting-point metal layer is an alloy layer, tin is the main component; and tin is the main component, and includes one selected from the group consisting of lead, bismuth, silver, zinc, indium, and copper. The above elements are the best. The low melting point metal layer may be composed of a plurality of metal layers. The above-mentioned low-melting-point gold layer can be formed by a wet plating method such as electroless plating or electroplating. In particular, it is preferable to use the plating method, and it is more preferable to use the above-mentioned plating device. Next, a manufacturing method of an electronic circuit device using the above-mentioned conductive fine particles will be described. Β The laminated conductive fine particles provided with a conductive metal layer around the spherical elastic substrate particles are used to manufacture electronic circuits composed of electronic circuit elements and electronic circuit boards. In the device, a conductive material composed of a conductive adhesive or a solder paste is disposed on an electrode portion of any of the electronic circuit element and the electronic circuit substrate, and the conductive particles are placed on the electrode portion. The conductive metal layer of the conductive fine particles is electrically connected to the electrode portion. Fig. 41 is a schematic diagram showing an electronic circuit element on which laminated conductive fine particles are placed. Fig. 42 is a schematic diagram showing an electronic circuit substrate on which laminated conductive fine particles are placed. Next, a conductive material composed of a conductive adhesive or a solder paste is disposed on the electrode portion of the other electronic circuit element or the electronic circuit substrate, and is superimposed on the above-mentioned conductive fine particles and electrically connected by heating. In this manufacturing step, because the high pressure is not used, it will not damage the properties of the 1C chip. ___ 33 ------------ < The scale is applicable to China National Standards (CNS) Λ4 gauge (210X29 *? Against) (Please read the notes on the back before reading this page)

459072 A7 B7 五、發明説明（/?| ) 能。將上述積層導電性微粒子載置於電子電路元件或電子 電路基板時，所用的模具是在對應於上述電子電路的電極 部或電子電路基板的電極部之位置上、具有比上述導電性 微粒子的直徑小之凹陷者，於該模具之凹部上載置上述導 電性微粒子，接著在載置於模具的上述導電性微粒子的露 出面之一部分塗布附著性液體後，藉由使上述模具接觸上 述電極部，以使上述導電性微粒子轉置於上述電極部上。 藉此，上述導電性微粒子將不致配置於電極部以外的位置 ，因此可完全防止鄰接的電極間之絕緣電阻値的降低。 經濟部中央標準局負工消费合作社印製 (請先閱讀背面之注意事項再填寫本頁) 又，使用於上述球狀彈性基材粒子的周圍設有導電金 屬層及低融點金屬層之上述重積層導電性微粒子’以製造 上述電子電路元件及電子電路基板所構成之電子電路裝置 時，.首先，在上述電子電路元件的電極部或電子電路基板 上，載置上述重積層導電性微粒子，藉由將載置有上述重 積層導電性微粒子之電極部附近加熱，以使上述重積層導 電性微粒子的.低融點金屬層融解，而使上述重積層導電性 微粒子的導電金屬層和電極部電連接。圖43係顯示載置有 重積層導電性微粒子之電子電路元件的模式圖。圖44係顯 示載置有重積層導電性微粒子之電子電路基板的模式圖。 接著，在維持電連接下，藉由冷卻以使上述電連接固 定，然後，在固定於電極部之上述獎積層導電性微粒子上 ，將另一電極部重疊，藉由加熱等之進行以使低融點金屬 層融解，而使上述另一電極部和固定於電極部之上述重積 層導電性微粒子電連接，藉由冷卻以於連接狀態下固定之 ________ ___74------ 本紙张尺度適用中國國家標準（CNS ) Λ4蚬格（2IOX2W公妨） 經濟部中央標準局貝工消費合作社印製 459072 五、發明説明（7>) 。此製造步驟中’不需使兩高壓力。 將上述重積層導電性微粒子載置於上述電子電路元件 的電極部或上述電子電路基板的電極部時，可使用和將積 層性導電性微粒子載置時的方法相同之上述模具。 其他的電子電路裝置之製造方法，是在上述電子電路 元件的電極部或上述電子電路基板的電極部上，藉由將於 球狀彈性基材粒子的周圍被覆導電金屬層之1個導電性微 粒子加熱壓接以載置之，而使上述導電性微粒子的上述導 電金屬層和上述電極部藉導電材以維持電連接.41 上述方法所製造之電子電路裝置中，上述連接係使用 於球狀彈性基材粒子的周圍設有導電金屬層或該導電金屬 層及低融點金屬之導電性微粒子以進行，在上述導電性微 粒子的導電金屬層和上述電子電路元件的電極部之接觸部 ，對各接觸部係藉由1個上述導電性微粒子以電連接，且 ，在上述導電性微粒子的導電金屬層和上述電子電路基板 的電極部之接觸部，對各接觸部係藉由1.個上述導電性微 粒子以電連接。 圖45係顯示本發明的電子電路裝置之模式圖。 該電子電路裝置中，於加熱冷卻時，因上述電子電路 元件和上述電子電路基板之熱膨脹係數差，會使上述電子 電路元件的電極部及上述電子電路基板電極部中的一方相 對於另一方在平行方向移位。 因此，雖然上述導電性微粒子會剪切變形，但上述導 電性微粒子的球狀彈性基材粒子會彈性地剪切變形，由於 本紙張尺度適用中國國家標準（CNS ) Λ4^格（^χ 29775公於) (請先閲讀背面之注意亊項再填寫本頁) 訂 痒· 4 0 9 0 72 經濟部中央標準局貝工消f合作社印製 Α7 Β7 五、發明説明（q 3 此變形爲可回復的，故在使用上述導電性微粒子之電子電 路裝置中，可減輕上述導電性微粒子的導電金屬層和上述 電子電路電極部或上述電子電路基板電極部的接合界面所 產生之剪切應力，而將連接可靠性提高》 該剪切應力之減輕效果，可使用接合測試器(雷斯卡社 製PTR-10型)以測定評價出。作爲測定試料，係使用將上 述導電性微粒子連接固定於上述電子電路基板上所得者。 將連接固定有上述導電性微粒子之上述電子電路基板安裝 於台座上，將剪切測試用工具相對台座垂直配置，於其接 觸上述導電性微粒子側面之狀態下令台座移動，而於上述 導電性微粒子的導電金屬層和電子電路基板電極部的接合 界面上產生剪切應力。 .此時可回復的彈性應變量，係代表相對剪切變形的回 復能力，本發明的導電性微粒子中，係使用富彈性力之基 材粒子，由於上述可回復的彈性應變大，故相對剪切變形 之回復能力大。 本發明的電子電路裝置，在藉平行方向的物理力以使 電子電路元件的電極部及電子電路基板電極部中的一方相 對於另一方在平行方向移位時’由於上述本發明的導電性 微粒子之相對剪切變形的回復能力大’故即使有這種移位 產生仍可充分地回復’因此連接可靠性高。 又，本發明的電子電路裝置中，係使用含富彈性力的 基材粒子之導電性微粒子，由於基於導電性微粒子的應變 變形之電極部的剝離強度F係下述[2式]所示般之大’故即 ...76__ 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210X297公) 身— •\ly· (請先閲讀背面之注意事項再楨寫本頁) --0 Μ 459072 A7 B7 五、發明說明（1^) 基材粒子之導電性微粒子，由於基於導電性微粒子的應變 變形之電極部的剝離強度F係下述[2式]所示般之大，故即 使對於大的移位導電性微粒子也不致剝離，故可維持電連 接而具高連接可靠性。 500XD，XD’（gr)<F<8000XD’ XD’（gr) [2 式] 其中’ D’爲導電性微粒子的直徑(單位mm)。 本發明的電子電路裝置中’電子電路元件的電極部和 電子電路基板的電極部間之距離宜爲導電性微粒子的直徑 之 90〜100%。 若上述距離未滿90% ’因電子電路元件的電極部和電 子電路基板的電極部的距離會過近，導電性微粒子會變形 ’有時會形成電連接不良，若上述距離超過100%，導電性 微粒子和電子電路元件或電子電路基板易產生接觸不良， 有時會形成電連接不良。 又，本發明的電子電路裝置，流通電子電路元件的電 極部和電子電路基板的電極部間之電流的極限値係每I個 電極部〇·5〜10安培而極大，故即使有大電流流通這些電極 間時也不會破壞電極部或導電性微粒子，故連接可靠性高 。又，本發明中，係使用導電性微粒子以進行採用反扣晶 片接合或BGA接合之連接，因此可在電子電路元件或電子 電路基板上進行高密度的配線。 [實施本發明之最佳形態] 以下列舉實施例以更詳細地說明本發明，但本發明並 非僅限於這些實施例中。 77 ^Α張尺^用中國國家標準（CNS)A4i格（210 X 297公釐） ~ (請先閱讀背面之>±意事項再填寫本頁) .裝---- 訂---------後. 經濟部智慧財產局員工消費合作社印製 459072 A7 87 五、發明説明 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 形成作爲導電基底層之鍍鎳層，而得出平均粒徑75.72ym 、標準偏差2.87/zm之鍍鎳微粒子。取所得的鍍鎳微粒子 16g，使用圖1所示的導電性微粒子製造裝置以於其表靣進 行鍍鎳。 多孔體12係使用高密度聚乙烯所形成之孔徑20#m 的多孔體β陽極2a係使用金屬鎳。 鍍液係使用瓦特浴。所用的瓦特浴之組成爲鎳濃度 42g/L、硫酸鎳 150g/L、硼酸 3ig/L。 鍍液的溫度爲50°C，電流爲30A，電流密度0.3A/dm2 ，電壓爲14〜15V，在此條件下於兩電極間通電25分》處 理室的周速爲300m/分，每II秒將旋轉方向逆轉。 .處理室旋轉中，基於離心力的作用之受到朝外周方向 的力之鍍液，雖會形成研缽狀的旋渦，但不致從中空罩1 上方的開口部溢流出。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 。又，此經鍍鎳的樹脂微粒子1〇〇個的平均粒徑爲78,52私 m，鍍鎳層的厚爲1.4#m。粒徑的變動係數爲2.7%，而証 明出鑛鎳層的厚相當均一。 又，多孔體中有阻塞的產生，而有約30%的粒子損失 。又，重覆進行鍍敷試驗3次時阻塞變得很嚴重，導致多 孔體之無法再使用。 實施例2(比較例） __7S__ 本紙張尺度適用中國國家標準（CNS > Λ4現格（210X297公势+ ) I 1 , . . 訂 H - . 腺 ... (請先閲讀背面之注意事項再禎舄本頁) 經濟部中央標準局貝工消費合作社印製 45 9 Ο 72 經濟部中决標準局員工消费合作社印製 Α7 五、發明説明（7《） 作爲鍍敷裝置，係使用圖2所示之習知的導電性微粒 子製造裝置’於多孔體12中’如圖8所示，係在聚丙燦製 之孔徑70ym的多孔體處理室側內側面上貼附尼龍製之孔 徑l〇#m的過濾器，除此之外係和實施例1相同而進行電 鍍。 當處理室旋轉時，基於旋轉之離心力的作用而受到朝 外周方向的力之鍍液會在處理室內形成硏缽狀的旋渦，而 .沿著罩1的內壁向上昇，而使鍍液從罩1的開口部8飛散 出。微粒子會隨著此鍍液的飛散而從處理室內向外部流出（ 溢流）*將造成無法鑛敷41 然而，於鍍敷終了後的多孔體中不致產生阻塞β 又，此實施例2係用來當作比較例。 .實施例3 作爲鍍敷裝置，係使用圖1所示之導電性微粒子製造 裝置，於多孔體12中，如圖8所示，係在聚丙烯製之孔徑 70^m的多孔體處理室側內側面上貼附尼龍製之孔徑10" m的過濾器，除此之外係和實施例1相同而進行電鍍。 處理室旋轉中，基於離心力的作用之受到朝外周方向 的力之鍍液，雖會形成硏缽狀的旋渦，但不致從中空罩1 上方的開口部溢流出β 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 β又，此經鍍鎳的樹脂微粒子100個的平均粒徑爲78.52# m ’鍍鎳層的厚爲1.5#m。粒徑的變動係數爲2.6%，而証 ----------23_____ 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210 X 297公兑） 1 Η . 批衣 _ i— —i :1:- i— 訂 脉 (諳先Μ讀背面之注意事項再垆.¾本頁) 經濟部中央標隼局員Η消费合作杜印製 A7 B7 五、發明説明d) 明出鍍鎳層的厚相當均一 β 又’多孔體12中沒有阻塞的產生，即使重覆進行鍍 敷試驗5次也沒有阻塞產生。 實施例4 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 形成作爲導電基底層之鍍鎳層，而得出平均粒徑250.68〆 m、標準偏差8.02 之鍍鎳微粒子。取所得的鍍鎳微粒 子30g，使用圖1所示的導電性微粒子製造裝置以於其表 面進行鍍鎳。 多孔體12係使用高密度聚乙烯所形成之孔徑70#m 的多孔體。陽極2a係使用金屬鎳《鍍液係使用瓦特浴。 鍍液的溫度爲5〇°C，電流爲38A，電流密度 0.65A/dm2，電壓爲16〜17V，在此條件下於兩電極間通電 20分。處理室的周速爲250m/分，每11秒將旋轉方向逆轉 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡観察時，所有的粒子都未凝集而以單粒子存在 。又，此經鍍鎳的樹脂微粒子100個的平均粒徑爲255.68 μπι，鍍鎳層的厚爲2.5/zm »粒徑的變動係數爲2.4%，而 証明出鍍鎳層的厚相當均一。又，總鍍敷時間爲約45分。 實施例5 將實施例3所得之導電性微粒子28g，使用圖1所示 之導電性微粒子製造裝置而於其表面進行鍍銲錫。 多孔體12係使用高密度聚乙烯製之孔徑20#m的多 I I ! 裝 -H ^ (請先閲讀背面之注意事項再填，¾'本頁) 本紙張尺度適用中國國家榡準（CNS ) Λ4规梢（210X297公犮> Α7 45 9 Ο 72 五、發明説明（7少） 孔體。 陽極2a係使用錫：鉛=6 : 4之合金β 鍍液係使用石原藥品工業社製的酸性浴(537Α)。鍍液 的組成中，總金屬濃度15〜30g/L，溶中的金屬比例 Sn%=55〜7〇%，烷醇磺酸1〇〇〜150g/L，添加劑4〇mL。將鍍 液分析的結果，總金屬濃度21g/L，浴中的金屬比例 Sn%=65%，烷醇磺酸 107g/L。 鍍液的溫度爲20°C，電流爲50A，電流密度0.5A/dra2 ，電壓爲7〜8V，在此條件下於兩電極間通電15分。處理 室的周速爲300m/分，每11秒將旋轉方向逆轉。 處理室旋轉中，基於離心力的作用之受到朝外周方向 的力之鍍液，雖會彤成硏缽狀的旋渦，但不致從中空罩1 上方的開口部溢流出。 將如此般所得之最外殻爲鍍銲錫層之鍍銲錫樹脂微粒 子以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子 存在。又，此經鍍銲錫的樹脂微粒子100個的平均粒徑爲 84.88 em’鍍銲錫層的厚爲3.2yme粒徑的變動係數爲 3.2°/。，而証明出鍍鎳層的厚相當均一。 又’多孔體中有阻塞的產生，而有約30%的粒子損失 。又’重覆進行鍍敷試驗3次時阻塞變得很嚴重，導致多 孔體之無法再使用。 實施例6(比較例） 作爲鍍敷裝置，係使用圖2所示之習知的導電性微粒 子製造裝置’於多孔體12中，如圖8所示，係在聚丙烯製 — ____ 本紙張尺度適用中國國家標準（CNS )八4说格（2丨0X 297公焓） 裝 訂 i 脉 (請先閱讀背面之注意事項再鈔，^'本頁) 經濟部中央標準局貝工消費合作社印製 經濟部中央標準局一貝工消費合作社印¾ 459072 A7 __B7 五、發明説明0/) 之孔徑70/zm的多孔體處理室側內側面上貼附尼龍製之孔 徑10#m的過濾器，除此之外係和實施例5相同而進行電 鍍。 當處理室旋轉時，基於旋轉之離心力的作用而受到朝 外周方间的力之鍍液會在處理室內形成硏缽狀的旋渦，而 沿著罩1的內壁向上昇，而使鍍液從罩1的開口部8飛散 出。微粒子會隨著此鍍液的飛散而從處理室內向外部流出( 溢流），將造成無法鍍敷。 然而，於鍍敷終了後的多孔體中不致產生阻塞。 又，此實施例6係用來當作比較例。 實施例7 多孔體I2，如圖8所示，係在聚丙烯製之孔徑70/im 的多孔體處理室側內側面上貼附尼龍製之孔徑l〇/zm的過 濾器，除此之外係和實施例5相同而進行電鍍。 處理室旋轉中，基於離心力的作用之受到朝外周方向 的力之鍍液，雖會形成硏缽狀的旋渦，但不致從中空罩1 上方的開口部溢流出。 將如此般所得之最外殻爲鑛銲錫層之鍍銲錫樹脂微粒 子以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子 存在。又，此經鏡銲錫的樹脂微粒子100個的平均粒徑爲 84.92仁m，鍍銲錫層的厚爲3.4 μηι。粒徑的變動係數爲 3.1%，而証明出鍍鎳層的厚相當均一。 又，多孔體12中沒有阻塞的產生，即使重覆進行鍍 敷試驗5次也沒有阻塞產生。 __R2______ 心張尺度適用中國國家榡孪（CNS ) Λ4^格（210X297公犛） --------—^------1T------^ (請先閱讀背面之注意事項再參寫本頁) 經濟部中央標準局負工消費合作社印製 46S〇 72 A 7 ________ 五、發明説明（？D) 實施例8 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 形成作爲導電基底層之鍍鎳層，而得出平均粒徑5.43#m 、標準偏差〇.16/zm之鍍鎳微粒子。取所得的鍍鎳微粒子 25g，使用圖1所示的導電性微粒子製造裝置以於其表面進 行鍍鎳。 多孔體12係使用高密度聚乙烯所形成之孔徑70#«1 的多孔體。陽極2a係使用金屬鎳β鍍液係使用瓦特浴。 鍍液的溫度爲50°C，電流爲30Α，電流密度〇.3A/dm2 ，電壓爲14〜15V，在此條件下於兩電極間通電25分。處 理室的周速爲300m/分，每11秒將旋轉方向逆轉。 處理室旋轉中，基於離心力的作用之受到朝外周方向 的力之鍍液，雖會形成研缽狀的旋渦，但不致從中空罩1 上方的開口部溢流出。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 。又，此經鍍鎳的樹脂微粒子100個的平均粒徑爲7.23# m，鍍鎳層的厚爲0.9ym。粒徑的變動係數爲2.8%，而証 明出鍍鎳層的厚相當均一。又，總鍍敷時間爲約45分。 比較例1 作爲鍍敷裝置，係使用圖2所示之習知的導電性微粒 子製造裝置，多孔體12，係使用高密度聚乙烯製之孔徑30 //m的多孔體，除此之外係和實施例1相同而進行電鍍。 當處理室旋轉時，基於旋轉之離心力的作用而受到朝 — 一 -____£3___ 本紙乐又度適用中國國象標準（CNS ) Λ4^格（210X297公#.) ---------种衣------1Τ------^ \J/, -D... (請先閲讀背面之注項再續寫本頁) 經濟部中失標準局員工消費合作社印製 45 9072 A7 B7 五、發明説明（SM). 外周方向的力之鍍液會在處理室內形成硏缽狀的旋渦，而 沿著罩1的內壁向上昇，而使鍍液從罩1的開口部8飛散 出。微粒子會隨著此鍍液的飛散而從處理室內向外部流出（ 溢流），將造成無法鍍敷。又，多孔體中有阻塞產生》 比較例2 除了周速爲250m/miri外，係和比較例1相同而進行 鍍敷。 即使處理室旋轉也不致產生溢流，但微粒子在靠近接 觸環前就被通電，故無法進行鍍敷。 比較例3 使用圖2.所示之習知的導電性微粒子製造裝置，和實 施例4相同地進行銨敷。由於處理室內的液量少，故總電 流量僅26A，電流密度低到〇.44A7dm2，爲得出和實施例3 相同的鍍鎳厚’總鍍敷時間約芘費70分’約須^倍的鍍 敷時閭β 比較例4 作爲鍍敷裝置，係使用圖2所示之習知的導電性微粒 子製造裝置，除此之外係和實施例5相同而進行電鍍。 當處理室旋轉時，基於旋轉之離心力的作用而受到朝 外周方向的力之鍍液會在處理室內形成硏缽狀的旋渦，而 、沿著罩1的內壁向上昇，而使鍍液從罩1的開口部8飛散 出。微粒子會隨著此鍍液的飛散而從處理室內向外部流出（ 溢流），將造成無法鍍敷β又，多孔體中有阻塞產生 比較例5 ______84_______ { CNS ) Λ4^δ { 21 O X 297^) I —裝 1 線 -.) J, (請先閱讀背面之注意事項再"-'烏本頁) 五、發明説明 作爲鍍敷裝置，係使用圖2所示之習知的導電性微粒 子製造裝置，多孔體12，係使用陶瓷製之孔徑12/ζηι的多 孔體，除此之外係和實施例8相同而進行鍍鎳。 當處理室旋轉時，基於旋轉之離心力的作用而受到朝 外周方向的力之鍍液會在處理室內形成硏缽狀的旋渦，而 沿著罩1的內壁向上昇，而使鍍液從罩1的開口部8飛散 出。微粒子會隨著此鍍液的飛散而從處理室內向外部流出( 溢流），將造成無法鍍敷。 將實施例1〜8及比較例1〜5的結果整理於表1中。 表1459072 A7 B7 5. Description of the invention (/? |) Yes. When the laminated conductive fine particles are placed on an electronic circuit element or an electronic circuit substrate, the mold used is at a position corresponding to the electrode portion of the electronic circuit or the electrode portion of the electronic circuit substrate, and has a diameter larger than that of the conductive fine particles. The small recessed person places the conductive fine particles on the concave portion of the mold, and then applies an adhesive liquid to a part of the exposed surface of the conductive fine particles placed on the mold, and then contacts the electrode portion with the mold to The conductive fine particles are transferred onto the electrode portion. This prevents the conductive fine particles from being arranged at positions other than the electrode portion, so that the reduction in the insulation resistance 邻接 between adjacent electrodes can be completely prevented. Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives (please read the precautions on the back before filling this page). Also, the above-mentioned spherical elastic substrate particles are provided with a conductive metal layer and a low melting point metal layer. When manufacturing the electronic circuit device composed of the above-mentioned electronic circuit element and the electronic circuit substrate by re-stacking the conductive fine particles, first, the electrode portion of the electronic circuit element or the electronic circuit substrate is placed with the re-layer conductive fine particles. By heating the vicinity of the electrode portion on which the conductive particles of the re-layered layer are placed, the low-melting-point metal layer of the conductive particles of the re-layered layer is melted, so that the conductive metal layer and the electrode portion of the conductive layer of the re-layered conductive particles are melted. Electrical connection. Fig. 43 is a schematic view showing an electronic circuit element on which conductive fine particles of a re-layer are placed. Fig. 44 is a schematic view showing an electronic circuit board on which conductive fine particles of a re-layer are placed. Next, while maintaining the electrical connection, the electrical connection is fixed by cooling, and then the other electrode portion is overlapped on the above-mentioned conductive layer of the conductive particles, which is fixed to the electrode portion, and is lowered by heating or the like. The melting point metal layer is melted, so that the other electrode portion is electrically connected to the conductive particles of the re-stacked layer fixed on the electrode portion, and is cooled to be fixed in a connected state by cooling. ________ ___74 --- This paper size Applicable to the Chinese National Standard (CNS) Λ4 蚬 grid (2IOX2W). Printed by the Peugeot Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 459072 5. Description of Invention (7 >). It is not necessary to use two high pressures in this manufacturing step. When the re-laminated conductive fine particles are placed on the electrode portion of the electronic circuit element or on the electrode portion of the electronic circuit board, the mold may be used in the same manner as when the laminated conductive fine particles are placed. In another method for manufacturing an electronic circuit device, one conductive fine particle is coated on the electrode portion of the electronic circuit element or the electrode portion of the electronic circuit substrate by covering a conductive metal layer around a spherical elastic substrate particle. The conductive metal layer and the electrode portion of the conductive fine particles are held by heat and pressure bonding to maintain electrical connection. 41 In the electronic circuit device manufactured by the above method, the connection is used for spherical elasticity A conductive metal layer or the conductive metal layer and conductive fine particles of a low-melting-point metal are provided around the substrate particles. The contact portion between the conductive metal layer of the conductive fine particles and the electrode portion of the electronic circuit element is The contact portion is electrically connected by one of the conductive fine particles, and the contact portion between the conductive metal layer of the conductive fine particles and the electrode portion of the electronic circuit board is 1. 1. Sexual particles are electrically connected. Fig. 45 is a schematic diagram showing an electronic circuit device of the present invention. In this electronic circuit device, during heating and cooling, due to a difference in thermal expansion coefficient between the electronic circuit element and the electronic circuit substrate, one of the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate is located opposite to the other. Shift in parallel. Therefore, although the conductive fine particles may be shear-deformed, the spherical elastic substrate particles of the conductive fine particles may be elastically shear-deformed. Since this paper size applies the Chinese National Standard (CNS) Λ4 ^ Grid (^ χ 29775) In) (Please read the note on the back before filling in this page) Order itching · 4 0 9 0 72 Printed by Bei Gong Xiao F Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (q 3 This variant is repliesable Therefore, in the electronic circuit device using the conductive fine particles, the shear stress generated at the bonding interface between the conductive metal layer of the conductive fine particles and the electronic circuit electrode portion or the electronic circuit substrate electrode portion can be reduced, and the Improvement of connection reliability》 The effect of reducing the shear stress can be measured and evaluated using a junction tester (type PTR-10 manufactured by Resca). As a measurement sample, the above-mentioned conductive fine particles are connected and fixed to the above-mentioned electrons. Obtained on a circuit board. The electronic circuit board to which the above-mentioned conductive fine particles are connected is mounted on a pedestal, and a shear test tool is opposed to each other. The base is vertically arranged, and the base is moved in a state where the base is in contact with the side surface of the conductive fine particles, and a shear stress is generated at a joint interface between the conductive metal layer of the conductive fine particles and the electrode portion of the electronic circuit board. The amount of strain represents the ability to recover from relative shear deformation. The conductive fine particles of the present invention use substrate particles with high elasticity. Since the recoverable elastic strain is large, the ability to recover from relative shear deformation is large. In the electronic circuit device of the present invention, when one of the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate is displaced in a parallel direction with respect to the other by a physical force in the parallel direction, 'the conductive fine particles of the present invention are described above. The relative shear deformation recovery ability is large, so it can fully recover even if such displacement occurs, so the connection reliability is high. Moreover, in the electronic circuit device of the present invention, substrate particles with high elasticity are used. The conductive fine particles have a peeling strength F of the electrode portion due to strain deformation of the conductive fine particles. [式 2] As big as shown so ... 76__ This paper size applies Chinese National Standards (CNS) Λ4 specifications (210X297 male) Body — • \ ly · (Please read the notes on the back before copying Page) --0 Μ 459072 A7 B7 V. Description of the invention (1 ^) The conductive particles of the substrate particles have a peeling strength F due to the strain deformation of the conductive particles as shown in the following [Formula 2] It is large, so it does not peel even for large displacement conductive particles, so it can maintain electrical connection and have high connection reliability. 500XD, XD '(gr) < F < 8000XD' XD '(gr) [Formula 2 ] Where 'D' is the diameter (unit mm) of the conductive fine particles. In the electronic circuit device of the present invention, the distance between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit board is preferably 90 to 90% of the diameter of the conductive fine particles. 100%. If the distance is less than 90%, "the distance between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit board is too short, and the conductive particles are deformed." Poor electrical connection may occur. If the distance exceeds 100%, the conductive The fine particles and the electronic circuit element or the electronic circuit board are prone to contact failures, which may cause electrical connection failures. In the electronic circuit device of the present invention, the limit of the current flowing between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate is extremely large from 0.5 to 10 amperes per I electrode portion, so even if a large current flows Since these electrodes do not damage the electrode portion or conductive fine particles, the connection reliability is high. Furthermore, in the present invention, since conductive fine particles are used for connection using buckle wafer bonding or BGA bonding, high-density wiring can be performed on electronic circuit elements or electronic circuit boards. [Best Mode for Carrying Out the Invention] The following examples are used to describe the present invention in more detail, but the present invention is not limited to these examples. 77 ^ Α 张 尺 ^ Use Chinese National Standard (CNS) A4i grid (210 X 297 mm) ~ (Please read > ± Issue on the back before filling this page). Equipment ---- Order ---- ----- Post. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 459072 A7 87 V. Description of the Invention A nickel-plated layer as a conductive base layer is formed on the organic resin fine particles obtained by copolymerizing styrene and divinylbenzene, and Nickel-plated particles having an average particle diameter of 75.72ym and a standard deviation of 2.87 / zm were obtained. 16 g of the obtained nickel-plated fine particles were taken and nickel-plated on the surface of the surface using a conductive fine particle manufacturing apparatus shown in FIG. 1. The porous body 12 is made of high-density polyethylene, and the porous body β anode 2a is made of metallic nickel. The plating solution uses a Watt bath. The composition of the Watt bath used was 42g / L nickel concentration, 150g / L nickel sulfate, and 3ig / L boric acid. The temperature of the plating solution is 50 ° C, the current is 30A, the current density is 0.3A / dm2, and the voltage is 14 ~ 15V. Under this condition, the current is applied between the two electrodes for 25 minutes. The peripheral speed of the processing chamber is 300m / minute, per II. Seconds reverse the direction of rotation. While the processing chamber is rotating, the plating solution subjected to the force in the outer peripheral direction due to the centrifugal force forms a mortar-like vortex, but does not overflow from the opening above the hollow cover 1. When the nickel-plated resin fine particles whose outermost shell was the nickel-plated layer were observed under an optical microscope, all particles were not aggregated and existed as single particles. The average particle size of 100 nickel-plated resin fine particles was 78,52 μm, and the thickness of the nickel-plated layer was 1.4 # m. The coefficient of variation of the particle size is 2.7%, which proves that the thickness of the ore nickel layer is quite uniform. In addition, clogging occurs in the porous body, and about 30% of the particles are lost. In addition, the clogging became serious when the plating test was repeated three times, and the porous body was rendered unusable. Example 2 (comparative example) __7S__ This paper size applies the Chinese national standard (CNS > Λ4 present grid (210X297 public momentum +) I 1,.. Order H-. Gland ... (Please read the precautions on the back before (祯 舄 Page) Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives 45 9 Ο 72 Printed by the Consumers ’Cooperatives of the Bureau of Standards, Ministry of Economic Affairs A7 V. Description of the invention (7") As a plating device, use Figure 2 As shown in FIG. 8, the conventional conductive fine particle manufacturing device shown in FIG. 8 is made of polypropylene and has a pore diameter of 10 # m attached to the inner side of a porous body processing chamber with a pore diameter of 70 μm. The other filters are plated in the same manner as in Example 1. When the processing chamber is rotated, the plating solution subjected to a force in the outer circumferential direction based on the rotating centrifugal force will form a bowl-shaped vortex in the processing chamber. As the powder rises along the inner wall of the cover 1, the plating solution is scattered from the opening 8 of the cover 1. The particles will flow out of the processing chamber to the outside (overflow) as the plating solution is scattered. Unable to deposit 41 However, in the porous body after plating No blocking β is generated. In addition, this Example 2 is used as a comparative example. Example 3 As a plating device, the conductive fine particle manufacturing device shown in FIG. 1 is used in the porous body 12, as shown in FIG. 8 As shown in the figure, a filter made of nylon with a diameter of 10 m is attached to the inside surface of a porous body processing chamber made of polypropylene with a diameter of 70 m, except that the plating is performed in the same manner as in Example 1. Processing chamber During the rotation, the plating solution subjected to the force in the outer circumferential direction due to the action of centrifugal force will form a bowl-shaped vortex, but will not overflow from the opening above the hollow cover 1. β The nickel-plated outermost shell will be When the nickel-plated resin fine particles of the layer were observed with an optical microscope, all particles were not aggregated and existed as single particles. The average particle diameter of 100 nickel-plated resin fine particles was 78.52 # m 'The thickness of the nickel-plated layer was 1.5 # m. The coefficient of variation of the particle size is 2.6%, and the certificate ---------- 23_____ This paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210 X 297) 1. Batch _ i— —i: 1:-i— Order the pulse (I read the precautions on the back first, then .¾ This page) Member of the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperation, Du printed A7 B7 5. Description of the invention d) It is clear that the thickness of the nickel plating layer is fairly uniform β and there is no blockage in the porous body 12, even if repeated No clogging occurred in the plating test five times. Example 4 A nickel-plated layer was formed on the organic resin fine particles obtained by copolymerizing styrene and divinylbenzene as a conductive base layer to obtain nickel-plated fine particles having an average particle diameter of 250.68 mm and a standard deviation of 8.02. 30 g of the obtained nickel-plated fine particles were taken, and the surface of the nickel-plated fine particles was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. 1. The porous body 12 is a porous body having a pore diameter of 70 # m, which is formed using high-density polyethylene. The anode 2a is made of metallic nickel, and the plating solution is made of watt bath. The temperature of the plating solution is 50 ° C, the current is 38A, the current density is 0.65A / dm2, and the voltage is 16 to 17V. Under this condition, electricity is applied between the two electrodes for 20 minutes. The peripheral speed of the processing chamber is 250m / min. The rotation direction is reversed every 11 seconds. When the nickel-plated resin particles with the nickel-plated outer shell as the outermost layer are observed under an optical microscope, all particles are not aggregated and exist as single particles. . In addition, the average particle size of 100 nickel-plated resin particles was 255.68 μm, the thickness of the nickel-plated layer was 2.5 / zm, and the coefficient of variation of the particle size was 2.4%, and it was proved that the thickness of the nickel-plated layer was fairly uniform. The total plating time was about 45 minutes. Example 5 28 g of the conductive fine particles obtained in Example 3 were subjected to solder plating using the conductive fine particle manufacturing apparatus shown in FIG. 1. The porous body 12 is made of high-density polyethylene with a pore size of 20 # m. II. Pack-H ^ (Please read the precautions on the back before filling, ¾ 'this page) This paper size applies to China National Standards (CNS) Λ4 gauge (210X297 male > A7 45 9 Ο 72) 5. Description of the invention (less than 7) Pore body. The anode 2a uses tin: lead = 6: 4 alloy β plating solution uses acidity made by Ishihara Pharmaceutical Industry Co., Ltd. Bath (537A). In the composition of the plating solution, the total metal concentration is 15 to 30 g / L, the proportion of dissolved metal is Sn% = 55 to 70%, the alkanolsulfonic acid is 100 to 150 g / L, and the additive is 40 mL. As a result of analysis of the plating solution, the total metal concentration was 21 g / L, the metal ratio in the bath was Sn% = 65%, and the alkanolsulfonic acid was 107 g / L. The temperature of the plating solution was 20 ° C, the current was 50 A, and the current density was 0.5. A / dra2, the voltage is 7 ~ 8V. Under this condition, the current is applied between the two electrodes for 15 minutes. The peripheral speed of the processing chamber is 300m / min, and the rotation direction is reversed every 11 seconds. The rotation of the processing chamber is based on the effect of centrifugal force. The plating solution, which is subjected to a force in the outer circumferential direction, will swell into a bowl-like vortex, but it will not overflow from the opening above the hollow cover 1. When the solder-plated resin fine particles whose outer shell is a solder-plated layer are observed with an optical microscope, all particles are not aggregated and exist as single particles. In addition, the average particle size of 100 solder-plated resin fine particles is 84.88 em ' The thickness of the solder layer was 3.2 μm, and the coefficient of variation of the particle diameter was 3.2 ° /. It was proved that the thickness of the nickel-plated layer was quite uniform. Also, “blocking occurred in the porous body, and about 30% of the particles were lost. Again” When the plating test was repeated three times, the clogging became serious, making the porous body unusable. Example 6 (Comparative Example) As a plating apparatus, a conventional conductive fine particle manufacturing apparatus shown in FIG. 2 was used 'In the porous body 12, as shown in Fig. 8, it is made of polypropylene — ____ This paper size applies Chinese National Standard (CNS) 8 4 cells (2 丨 0X 297 enthalpy) binding i pulse (please read the back first Note for re-notes, ^ 'this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed by the Central Standards Bureau of the Ministry of Economy, printed by Shellfish Consumer Cooperative ¾ 459072 A7 __B7 V. Description of the Invention 0 /) Aperture of 70 / zm Porous body processing chamber side inside surface A filter made of nylon with a diameter of 10 m was attached, and plating was performed in the same manner as in Example 5. When the processing chamber rotates, the plating solution, which is subjected to the force from the outer periphery based on the rotating centrifugal force, forms a bowl-shaped vortex in the processing chamber, and rises along the inner wall of the cover 1 to make the plating solution from The opening 8 of the cover 1 is scattered. The fine particles will flow out (overflow) from the processing chamber to the outside as the plating solution scatters, making it impossible to plate. However, clogging does not occur in the porous body after plating. This Example 6 is used as a comparative example. Example 7 As shown in FIG. 8, a porous body I2 is a filter made of nylon with a pore size of 10 / zm attached to the inner side surface of a porous body processing chamber with a pore size of 70 / im made of polypropylene. The plating was performed in the same manner as in Example 5. During the rotation of the processing chamber, the plating solution subjected to the force in the outer circumferential direction due to the action of the centrifugal force forms a bowl-shaped vortex, but does not overflow from the opening above the hollow cover 1. When the solder-plated resin fine particles having the outermost shell as a mineral solder layer in this way were observed with an optical microscope, all the particles did not aggregate and existed as single particles. In addition, the average particle diameter of 100 resin fine particles of the mirror solder was 84.92 μm, and the thickness of the solder plating layer was 3.4 μm. The coefficient of variation of the particle size was 3.1%, which proved that the thickness of the nickel plating layer was quite uniform. In addition, no clogging occurred in the porous body 12, and no clogging occurred even when the plating test was repeated five times. __R2______ The scale of the heart is applicable to the Chinese National Twin (CNS) Λ4 ^ lattice (210X297) ------------ ^ ------ 1T ------ ^ (Please read the Please refer to this page for further details.) Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives. 46S〇72 A 7 ________ V. Description of the Invention (? D) Example 8 Organic resin fine particles obtained by copolymerization of styrene and divinylbenzene A nickel-plated layer was formed on the conductive base layer to obtain nickel-plated particles having an average particle diameter of 5.43 # m and a standard deviation of 0.16 / zm. 25 g of the obtained nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in FIG. 1. The porous body 12 is a porous body with a pore diameter of 70 # «1 formed using high-density polyethylene. The anode 2a uses a metal nickel beta plating solution and uses a watt bath. The temperature of the plating solution is 50 ° C, the current is 30A, the current density is 0.3A / dm2, and the voltage is 14 to 15V. Under this condition, electricity is applied between the two electrodes for 25 minutes. The peripheral speed of the processing room is 300 m / min, and the rotation direction is reversed every 11 seconds. During the rotation of the processing chamber, the plating solution subjected to the force in the outer circumferential direction due to the action of the centrifugal force forms a mortar-like vortex, but does not overflow from the opening above the hollow cover 1. When the nickel-plated resin fine particles whose outermost shell was the nickel-plated layer were observed under an optical microscope, all particles were not aggregated and existed as single particles. The average particle diameter of 100 nickel-plated resin fine particles was 7.23 # m, and the thickness of the nickel-plated layer was 0.9 μm. The coefficient of variation of the particle size was 2.8%, and it was confirmed that the thickness of the nickel plating layer was quite uniform. The total plating time was about 45 minutes. Comparative Example 1 As the plating apparatus, a conventional conductive fine particle manufacturing apparatus shown in FIG. 2 was used. The porous body 12 was a porous body made of high-density polyethylene with a pore diameter of 30 // m. The plating was performed in the same manner as in Example 1. When the processing chamber rotates, it is subject to the centrifugal force due to the rotation — a -____ £ 3 ___ This paper music is also applicable to the China National Elephant Standard (CNS) Λ4 ^ Grid (210X297 公 #.) -------- -Seed clothes ------ 1Τ ------ ^ \ J /, -D ... (Please read the note on the back before continuing on this page) Manufacturing 45 9072 A7 B7 V. Description of the invention (SM). The plating solution of the force in the peripheral direction will form a bowl-like vortex in the processing chamber, and rise upward along the inner wall of the cover 1, so that the plating solution is removed from the cover 1 The opening 8 is scattered. The fine particles will flow out (overflow) from the processing chamber to the outside as the plating solution scatters, making it impossible to plate. In addition, clogging occurred in the porous body. Comparative Example 2 The plating was performed in the same manner as in Comparative Example 1 except that the peripheral speed was 250 m / miri. Even if the processing chamber is rotated, no overflow occurs, but the particles are energized before they come close to the contact ring, so plating cannot be performed. Comparative Example 3 An ammonium application was performed in the same manner as in Example 4 using a conventional conductive fine particle manufacturing apparatus shown in Fig. 2. Because the amount of liquid in the processing chamber is small, the total current is only 26A, and the current density is as low as 0.44A7dm2. In order to obtain the same nickel plating thickness as in Example 3, the total plating time is about 70 minutes, which is about ^ times. Comparative Example 4 at the time of plating [beta] Comparative Example 4 As a plating apparatus, a conventional conductive fine particle manufacturing apparatus shown in FIG. 2 was used. Except for this, plating was performed in the same manner as in Example 5. When the processing chamber rotates, the plating solution subjected to a force in the outer circumferential direction based on the rotating centrifugal force will form a bowl-shaped vortex in the processing chamber, and rise upward along the inner wall of the cover 1 to remove the plating solution from The opening 8 of the cover 1 is scattered. Micro particles will flow out from the processing chamber to the outside (overflow) as the plating solution scatters, which will result in non-platable β and blockage in the porous body. Comparative Example 5 ______84_______ {CNS) Λ4 ^ δ {21 OX 297 ^ ) I — Install 1 wire-.) J, (please read the precautions on the back first "-'black page) 5. Description of the invention As a plating device, the conventional conductive fine particles shown in Figure 2 are used The manufacturing apparatus, the porous body 12, was made of a ceramic porous body having a pore diameter of 12 / ζηι, and was nickel plated in the same manner as in Example 8. When the processing chamber rotates, the plating solution subjected to a force in the outer circumferential direction based on the centrifugal force of the rotation will form a bowl-shaped vortex in the processing chamber, and rise upward along the inner wall of the cover 1 to make the plating solution from the cover. The opening 8 of 1 is scattered. The fine particles will flow out (overflow) from the processing chamber to the outside as the plating solution scatters, making it impossible to plate. The results of Examples 1 to 8 and Comparative Examples 1 to 5 are summarized in Table 1. Table 1

mm mm 雌 (㈣ * 多孔 m mm 孔徑 (㈣ mi 腿 丨評價 材寅 孔徑 1 m 75 圈1 — PE 20 — 無 有 〇 2 媒 75 圖2 ffis PP 70 10 有 無 Δ 霣 3 親 75 mi 圖s PP 70 10 無 無 ◎ 4 m 2J0 圖1 — PP 70 一 無 無 ◎ 旄 5 銲鋇 75 圖1 一 PE 20 一 無 有 〇 6 銲教 75 圃2 圖8 PP 70 10 有 無 厶 例 7 鋅錫 75 圈1 圖8 PP 70 10 無 無 ◎ 8 親 5 圖8 PP 70 3 L一無一.： 無 ◎ 1 嫌 75 圖2 — PE 20 _ 有 有 X 比 1 a 無 有 X 較 3 親 250 圖2 一 PP 70 一 無 無 △ 例 4 75 田2 一 PE 20 _ 有 有 X 5 縝 5 圖2 - 贼 2 - 有 有 X 經濟部中央標準局員工消费合作社印製 實施例9 在苯乙烯和二乙烯苯共聚合所得之平均粒徑93.45从m '標準偏差1.30#m、變動係數1.4%的有機樹脂微粒子上 R5 本紙張尺度適用中國國家標卒（CNS ) Λ4規格（2丨0X297公粒) 經濟部中央標準局負工消费合作社印製 459072 A7 ___ B7 _ 五、發明説明. 形成作爲導電基底層之鍍鎳層，而得出平均粒徑97.lO/zm 、標準偏差1.86#ιη、變動係數1.9%之鍍鎳微粒子。取所 得的鍍鎳微粒子32.7g，使用圖11所示的導電性微粒子製 造裝置以於其表面進行鍍鎳。 所使用之多孔體12，係在高密度聚乙烯製之孔徑100 "m、厚6mm的板狀多孔質保持體22上面貼附尼龍製的孔 徑iO/zm、厚10#m的片狀過濾器20所構成。陽極2a係 使用錫：鉛=6 : 4之合金。鍍液係使用石原藥品株式會社 製之酸性浴(537A)〇 鍍液的組成中，總金屬濃度15〜30g/L，溶中的金屬比 例Sn%=55〜70%，烷醇磺酸100〜150g/L，添加劑40mL。 將鍍液分析的結果，總金屬濃度20g/L，浴中的金屬比例 Sn%=65%，烷醇磺酸 106g/L。 鍍液的溫度爲2(TC，電流爲50Α，電流密度0.5A/dm2 ，電壓爲11〜12V，在此條件下於兩電極間通電25分《處 理室的周速爲226m/分，每7.5秒將旋轉方向逆轉，總鍍敷 時間約1小時◊ 藉由採用上述多孔體的形狀，鍍敷中粒子會被壓接於 多孔體濾過面上，而可解決環狀的凝集物產生之問題。 將如此般所得之最外殻爲共晶鍍銲錫層之鍍鎳樹脂微 粒子以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒 子存在。又，此經鍍銲錫的樹脂微粒子100個的平均粒徑 爲103.78#m，鍍銲錫層的厚爲3.34#m。粒徑的變動係數 爲2.8%，而証明出鍍銲錫層的厚相當均一。又，表面沒有 ________ 站 _；___ 本紙張尺度適用中國國家標準（CNS ) Λ4规梢（210X 297公犮） ---------裝— {請先閱讀背面之注意事項再r?,本頁) 訂mm mm female (㈣ * porous m mm pore diameter (mi legs) evaluation material Yin hole diameter 1 m 75 turns 1 — PE 20 — no 〇2 medium 75 Figure 2 ffis PP 70 10 with or without Δ 霣 3 pro 75 mi figure s PP 70 10 Nothing ◎ 4 m 2J0 Figure 1 — PP 70 Nothing Nothing 旄 5 Barium solder 75 Figure 1 No. PE 20 Nothing 0 6 Welding teaching 75 Garden 2 Figure 8 PP 70 10 Nothing Example 7 Zinc tin 75 turns 1 Picture 8 PP 70 10 No No ◎ 8 Pro 5 Picture 8 PP 70 3 L Nothing .: No ◎ 1 Suspect 75 Picture 2 — PE 20 _ Yes X is better than 1 a No X is better than 3 Pro 250 Picture 2 1 PP 70 Nothing △ Example 4 75 Field 2 One PE 20 _ Yes X 5 缜 5 Figure 2-Thief 2-Yes X Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economy Example 9 Printed on styrene and divinylbenzene The average particle size obtained by copolymerization is 93.45 m from the standard deviation of 1.30 # m, and the coefficient of variation of 1.4% on the organic resin particles R5. Printed by the Bureau of Standards and Consumer Cooperatives 459072 A7 ___ B7 _ 5. Description of the invention. Formed as a conductive base layer The nickel-plated layer was used to obtain nickel-plated particles having an average particle size of 97.10 / zm, a standard deviation of 1.86 # ιη, and a coefficient of variation of 1.9%. 32.7 g of the obtained nickel-plated particles were used and the conductive particles shown in FIG. The device is manufactured so that its surface is nickel-plated. The porous body 12 used is a high-density polyethylene pore size 100 " m, 6 mm thick plate-shaped porous support body 22 with a nylon pore size iO / zm, 10 # m thick sheet filter 20. The anode 2a uses an alloy of tin: lead = 6: 4. The plating solution uses an acid bath (537A) manufactured by Ishihara Pharmaceutical Co., Ltd. , The total metal concentration is 15 ~ 30g / L, the ratio of dissolved metal is Sn% = 55 ~ 70%, the alkanolsulfonic acid is 100 ~ 150g / L, and the additive is 40mL. As a result of analyzing the plating solution, the total metal concentration is 20g / L, The metal ratio in the bath is Sn% = 65%, and the alkanolsulfonic acid is 106g / L. The temperature of the bath is 2 ° C, the current is 50A, the current density is 0.5A / dm2, and the voltage is 11-12V. Power is applied between the two electrodes for 25 minutes. The peripheral speed of the processing chamber is 226m / min. The rotation direction is reversed every 7.5 seconds, and the total plating time is about 1 hour. Said shape of the porous body, plating particles are pressed against the surface of the porous material was filtered, and solve the problem of generating cyclic aggregates. When the nickel-plated resin fine particles having the outermost shell as the eutectic solder plated layer were observed under an optical microscope, all the particles did not aggregate and existed as single particles. The average particle size of 100 solder-coated resin fine particles was 103.78 # m, and the thickness of the solder-plated layer was 3.34 # m. The coefficient of variation of the particle size was 2.8%, which proved that the thickness of the solder plating layer was quite uniform. In addition, there are no ________ stations on the surface; ___ This paper size applies to the Chinese National Standard (CNS) Λ4 gauge (210X 297 cm) --------- installation — {Please read the precautions on the back before r ?, This page)

M 90 72 a? _ ____B7 五、發明説明) 傷痕等的產生。將所得的靜錫被膜以原子吸光法分析胃， Sn爲59.1%，而証明其共晶組成。 以下的實施例及比較例中，所得的導電性微粒子$評 價項目係包含Φ凝集塊的比例(表2)，②鑛敷後的粒子表面 狀態(表3)。 表2 等級 鍍敷粒子的凝集程度 0 1000個粒子中5個粒子以上構成的凝集塊爲0個 1 1000個粒子中5個粒子以上構成的凝集塊爲1〜1〇個 2 1000個粒子中5個粒子以上構成的凝集塊爲11〜30個 3 1000個粒子中5個粒子以上構成的凝集塊爲31〜50個 4 1000個粒子中5個粒子以上構成的凝集塊爲51個以上 表3, 等級 鍍敷粒子表面是否有剝離痕、傷 0 100個粒子中表面上有剝離痕、傷的粒子爲0個 1 100個粒子中表面上有剝離痕、傷的粒子爲1〜3個 2 100個粒子中表面上有剝離痕、傷的粒子爲4〜10個 3 100個粒子中表面上有剝離痕、傷的粒子爲11〜2〇個 4 100個粒子中表面上有剝離痕、傷的粒子爲21個以上 又，基於以顯微鏡觀察100個粒子的結果，經由計算 而求出平均粒徑、鍍層厚。 實施例1〇 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 义度適用中國國家標準（CNS ) Λ4规枋（2丨〇父297公处） (請先閱讀背面之注意事項再硝為本頁) 裝. -丁 · -3 線 經濟部中央標準局負工消費合作社印製 紙 459072 A7 B7 __ 五、發明説明（β〇 形成作爲導電基底層之鍍鎳層，而得出平均粒徑30.25μιη 、標準偏差1.13μ«τι之鎳被覆微粒子。取所得的鎳被覆微 粒子7.5g，使用圖1所示的導電性微粒子製造裝置以於其 表面進行鍍鎳。 多孔體12，係在聚丙烯製之孔徑70#«1的多孔體的 處理室側內側面貼附尼龍製的孔徑過濾器所構成。 陽極2a係使用金屬鎳。鍍液係使用瓦特浴。 鍍液的溫度爲50 °C，電流爲36A，電流密度 0.36A/dm2，電壓爲15-16V，在此條件下於兩電極間通電 20分。處理室的周速爲250m/分，每11秒將旋轉方向逆轉 〇 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子， 使用高壓均化器(密法工業社製，微流體化庞M-110Y)，於 壓力500kg/cm2下施以解碎處理。進行解碎處理1次。高 壓均化器的系統流程圖顯示於圖13中，室18內的流程顯 示於圖14中。 如圖Π及圖14所示般，以泵216供給試料，依據室 218的孔口徑和泵的供給能量而於室218內產生壓差。藉 由此壓力降下、因試料被加速所產生之剪切力、因被加速 的流體從正面衝撞所產生之衝擊力，以在室內部將微粒子 解碎。 如此般以得出於表面形成有鍍鎳層之導電性微粒子。 實施例Π 除解碎處理次數爲3次外，係和實施例1〇相同而得 ______ 职______________ 本紙張尺度適用中國國家標辛（CNS ) 枯（210X297公筇） (請先間讀背而之注意事項再參轉本頁) ，vs 經濟部中央標举局员工消赀合作社印¾ 經濟部中央標窣局員工消费合作社印裝 4 5 9 Ο 7 2 Α7 --------_____ 五、發明説明“ 出表面形成有鍍鎳層之導電性微粒子。 實施例12 除解碎處理次數爲5次外，係和實施例10相同而得 出表面形成有鍍鎳層之導電性微粒子。 實施例13 進行和實施例10相同的鍍敷步驟，於鍍敷步驟中從 處理室13內連續地將微粒子隨著鍍液一起取出，使用高壓 均化器（密法工藥社製，微流體化床Μ_11〇γ)，於壓力 500kg/cm2下施以解碎處理，再返回處理室13內，重覆此 操作直到鍍敷終了。 如此般:將電鍍裝置和粉碎裝置組合的循環方式的流程 圖係顯示於圖15中。 .如圖15所示’從處理室上方的開口部將微粒子取出 管,221***(取出管的前端部配置於接觸環U附近），將接 觸環附近的鍍液及微粒子的懸濁液藉鍍敷微粒子取出泵 231而送往容器214。被送至容器214之鍍液及微粒子的懸 濁液215，係藉泵216而供給至室218內，藉壓力降低及 衝擊力以單粒子化，經由解碎微粒子供給管222以返回處 理室13。 如此般以得出表面形成有鍍鎳層之導電性微粒子。 比較例6 和實施例10進行同樣的鍍敷步驟，以得出表面形成 有鍍鎳層之導電性微粒子’但未進行解碎步驟° 實施例10〜13及比較例6的結果顯示於表4中。 _____§2_____ _ 本紙張尺度家標CNS ) Λ4规格（210>< 297公对) H ΐ衣 .. "訂 _ ] 線 (請先關讀背面之注意寧項再^爲本頁) 459072 Λ7 五、發明説明 表4 解碎處理數 凝集程度 是否有剝離痕、傷 實施例10 1次 第2級 第2級 實施例11 3次 第ί級 第3級 實施例12 5次 第〇級 第4級 實施例13 連續解碎 第〇級 第〇級 比較例6 無 第3級 第〇級 由表4可知，若在鍍敷終了後進行解碎處理(實施例 10)，相較於比較例6凝集量會減少。然而，會因解碎處理 而有鍍敷表面的剝離痕或傷。又，增加解碎處理次數可減 少凝集量，5次時幾乎爲0，但表面有剝離痕、傷的粒子量 會增多'。 •對於將電鍍裝置和粉碎裝置組合的循環方式（實施例 13)，由於從初期階段起就重覆進行鍍敷處理和解碎處理， 故幾乎完全沒有凝集，而可得出粒子表面無剝離痕、傷之 鍍敷皮膜。 實施例14 經濟部中央標隼局負工消费合作社印製 (讀先Μ讀背面之注意事項再gi'本頁) 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 形成作爲導電基底層之鍍鎳層，而得出平均粒徑15.24/im '標準偏差〇.7〇//m之鎳被覆微粒子。取所得的鎳被覆微 粒子10.0g，使用圖1所示的導電性微粒子製造裝置以於其 表面進行鍍鎳。 多孔體12，係在聚丙烯製之孔徑70μηι的多孔體的 _QQ__ 本紙張尺度適用中國國家標牟（CNS ) Λ4現梏（210X 297公筇} 459072 Λ7 Β7 五、發明説明（只尤） 處理室側內側面貼附尼龍製的孔徑10#m過滤器所構成。 陽極2a係使用金屬鎳。鍍液係使用瓦特浴。 鍍液的溫度爲5〇 °C，電流爲36A，電流密度 〇.36A/dm2 ’電壓爲15〜16V ’在此條件下於兩電極間通電 20分。處理室的周速爲250m/分’每11秒將旋轉方向逆轉 於鍍敷步驟中從處理室13內連續地將微粒子隨著鍍 液一起取出，使用均相混合器(特殊機化工業社製，τ·κ.管· 線均相混合器PL-SL)，於5000rpm下施以解碎處理，再返 回處理室13內，重覆此操作直到鍍敷終了。 如此般將電鍍裝置和粉碎裝置組合的循環方式的流程 圖係顯示於圖I6中。 .如圖16所示，從處理室上方的開口部將微粒子取出 管221***(取出管的前端部配置於接觸環11附近）’將接 觸環附近的鍍液及微粒子的懸濁液取出，藉由管線均相混 合器225予以解碎處理，經由解碎微粒子供給管222以返 回處理室Π。 如此般以得出表面形成有鍍鎳層之導電性微粒子。 比較例7 進行和實施例14相同的鍍敷步驟，以得出表面形成 有鍍鎳層之導電性微粒子，但未進行解碎步驟° 實施例14及比較例7的結果顯示於表5中。 (請先閲讀背面之注意事項再會寫本頁) -訂 經濟部中央標準局負工消费合作杜印製 5 —…1 η 解碎處理數 凝集程度1是否有剝離痕、傷 ___Q1 本紙張尺度適用中國國家榡毕（CNS ) Λ4规梏（210X2y7公笳） 經濟部中央標隼局貝工消费合作社印製 五、發明说明（1) 4 5 9 0 7^ A7 _B7 實施例Η 連藤碎 第〇級 第1級 比較例7 姐 JWS 第3級 第〇級 實施例15 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 形成作爲導電基底層之鍍鎳層’而得出平均粒徑6.74/zm 、標準偏差之鎳被覆微粒子。將所得的微粒子， 進行和實施例5相同的電鍍鎳’以得出平均粒徑8. 、鍍鎳厚L〇4^m之鍍鎳微粒子。取所得的鎳被覆微粒子 ，使用圖1所示的導電性微粒子製造裝置以於其表面進行 鍍鎳β 多孔體12，係在聚丙烯製之孔徑70/im的多孔體的 處理室側內側面貼附尼龍製的孔徑過濾器所構成^ 陽極2a係使用金屬鎳。鍍液係使用鏈烷磺酸銲錫浴。浴的 組成中，鏈烷磺酸亞鍚6〇ml/L、鏈烷磺酸鉛30ml/L、游離 鏈烷磺酸1⑻ml/L、光澤劑80ml/L » 鑛液的溫度爲20 °C，電流爲80.6A，電流密度 0_75A/dm2 ’電壓爲16〜17V ’在此條件下於兩電極間通電 15分。處理室的周速爲250m/分，每15秒將旋轉方向逆轉 於鍍敷步驟中從處理室13內連續地將微粒子隨著鍍 液一起取出，使用靜力混合器（特殊機化工業社製，τκ._ ROSS ISG混合器)施以解碎處理，再返回處理室13內，重 覆此操作直到鍍敷終了。 如此般將電鑛裝置和粉碎裝置組合的循環方式的流程 ----92___ _ 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210x297公垃） —~ i n i I 訂 I 線 ' - -..1/ (請先閲讀背面之注意事項再填爲本頁) 經濟部中央摞準局貝工消费合作社印製 409072 五、發明説明（’〇) 圖係顯示於圖Π中。 如圖17所示，從處理室上方的開口部將微粒子取出 管221***(取出管的前端部配置於接觸環11附近），將接 觸環附近的鍍液及微粒子的懸濁液取出，藉由靜力混合器 226予以解碎處理，經由解碎微粒子供給管2U以返回處 理室i3。 如此般以得出表面形成有鍍鎳層之導電性微粒子。 比較例8 進行和實施例6相同的鍍敷步驟，以得出表面彤成有 鍍鎳層之導電性微粒子，但未進行解碎步驟。 實施例15及比較例8的結果顯示於表6中。 表6 _ 解碎處理數 凝集程度 是否有剝離痕、傷 實施例15 連續解碎 第〇級 第1級 比較例8 無 第4級 第〇級 實施例16 在苯乙烯和二乙烯苯共聚合所得之有機樹脂微粒子上 形成作爲導電基底層之鍍鎳層，而得出平均粒徑2.98ym 、標準偏差〇.22ym之鎳被覆微粒子。取所得的錬被覆微 粒子8.〇g，使用圖1所示的導電性微粒子製造裝置以於其 表面進行鍍鎳。 多孔體12，係在聚丙烯製之孔徑70#m的多孔體的 處理室側內側面貼附尼龍製的孔徑10#m薄膜過濾器所構 成。該薄膜過濾器之2ym粒子的捕集效率爲98% ' 3#m _________________- ^^^^中國國家標準（〇^)八4岘格（210'乂297公#) ---------^裝------·玎------Μ (請先閱讀背面之注意事項再步-¾本頁) 40^0 72 A7 B7 經濟部中央標準局员工消费合作社印製 五、發明説明（%) 粒子的捕集效率爲99_9%以上。陽極2a係使用金屬錄。鍍 液係使用瓦特浴。 鑛液的溫度爲50 °C ’電流爲36A，電流密度 0.20A/dm2 ’電壓爲16〜17V ’在此條件下於兩電極間通電 50分。處理室的周速爲250m/分，每15秒將旋轉方向逆轉 〇 於鍍敷步驟中從處理室13內連續地將微粒子隨著鍍 液一起取出，使用超音波產生器(筒井理化學器械社製，超 音波洗淨器AU-70C) ’於頻率28kHz/s下施以解碎處理， 再返回處理室13內，重覆此操作直到鍍敷終了 β 如此般將電鍍裝置和粉碎裝置組合的循環方式的流程 圖係顯示於圖18中。 .如圖18所示，從處理室上方的開口部將微粒子取出 管221***(取出管的前端部配置於接觸環^附近），將接 觸環附近的鍍液及微粒子的懸濁液藉鍍敷微粒子取出泵 231而送往玻璃容器229。被送至容器229之鍍液及微粒子 的懸濁液215，係藉超音波產生器227之超音波粉碎效果 以單粒子化’藉由解碎粒子送出泵以從解碎微粒子供給管 222返回處理室13。 如此般以得出表面形成有鍍鎳層之導電性微粒子β 比較例9 進行和實施例16相同的鍍敷步驟，以得出表面形成 有鍍鎳層之導電性微粒子，但未進行解碎步驟。 實施例16及比較例9的結果顯示於表7中。 (請先閱讀背面之注意事項再城\?Λ本頁) -裝. 订M 90 72 a? _ ____B7 V. Description of the invention) The occurrence of scars, etc. The obtained static tin film was analyzed for the stomach by atomic absorption method, and Sn was 59.1%, and the eutectic composition was proved. In the following examples and comparative examples, the evaluation items of the obtained conductive fine particles $ include the proportion of Φ agglomerates (Table 2), and ② the surface state of the particles after mineral deposition (Table 3). Table 2 Degree of agglomeration of grade plated particles 0 Agglomerates composed of 5 or more particles among 1000 particles are 0 1 Agglomerates composed of 5 or more particles among 1000 particles are 1 to 10 2 out of 1000 particles 5 The agglomerates made up of more than 11 particles are 11 to 30. The agglomerates made up of 5 or more of 3 1000 particles are 31 to 50. The agglomerates made up of 5 or more of 4 1000 particles are 51 or more. Table 3, Whether there are peeling marks and wounds on the surface of the plated particles 0 0 100 peeling marks on the surface and wounded particles are 1 1 100 peeling marks and wounds on the surface are 1 to 3 2 100 Among the particles, there are 4 to 10 particles with peeling marks and wounds on the surface. Among 3,100 particles, there are 11 to 20 particles with peeling marks and wounds on the surface. 4100 particles have peeling marks and wounds on the surface. It is 21 or more, and based on the result of observing 100 particles with a microscope, the average particle diameter and the thickness of a plating layer are calculated | required. Example 10 The Chinese National Standard (CNS) Λ4 Regulations (2 丨 〇 Parent 297) are applied to the organic resin fine particles obtained by copolymerization of styrene and divinylbenzene. (This page).-Ding--3 Printed paper by the Central Bureau of Standards of the Ministry of Economic Affairs and Consumer Cooperatives 459072 A7 B7 __ 5. Description of the invention (β〇 Forms a nickel-plated layer as a conductive base layer, and obtains the average particle size Nickel-coated fine particles of 30.25 μιη and standard deviation of 1.13 μ «τι. 7.5 g of the obtained nickel-coated fine particles were taken and nickel-plated on the surface thereof using the conductive fine particle manufacturing apparatus shown in Fig. 1. The porous body 12 was made of polypropylene. A porous body made of 70 # «1 is made of nylon with a porous filter attached to the inner side of the processing chamber. The anode 2a is made of metallic nickel. The plating solution is made of a watt bath. The temperature of the plating solution is 50 ° C. The current is 36A, the current density is 0.36A / dm2, and the voltage is 15-16V. Under this condition, the current is applied between the two electrodes for 20 minutes. The peripheral speed of the processing chamber is 250m / minute, and the rotation direction is reversed every 11 seconds. The outermost shell obtained is nickel-plated Nickel-plated resin particles were subjected to a crushing treatment using a high-pressure homogenizer (manufactured by Mifa Industrial Co., Ltd., Microfluidized Pang M-110Y) at a pressure of 500 kg / cm2. The crushing treatment was performed once. The system flow chart is shown in Fig. 13, and the flow in the chamber 18 is shown in Fig. 14. As shown in Fig. 14 and Fig. 14, the sample is supplied by the pump 216, and is supplied to the chamber according to the hole diameter of the chamber 218 and the energy supplied by the pump. A pressure difference is generated in 218. By this pressure drop, the shear force generated by the sample being accelerated, and the impact force generated by the accelerated fluid colliding from the front, the particles are broken in the interior of the room. The conductive fine particles with a nickel-plated layer are formed on the surface. Example Π is the same as that of Example 10 except that the number of times of disintegration treatment is 3 times. ______ Position ______________ This paper standard is applicable to China National Standard Xin (CNS ) Dry (210X297) (please read the precautions before turning to this page), vs. the staff of the Central Standardization Bureau of the Ministry of Economic Affairs, printed by the cooperative ¾ printed by the staff of the Central Standardization Bureau of the Ministry of Economic Affairs, 4 5 9 Ο 7 2 Α7 --------_____ V. Invention "The conductive fine particles having a nickel-plated layer formed on the surface. Example 12 The conductive fine particles having a nickel-plated layer formed on the surface were obtained in the same manner as in Example 10 except that the number of times of disintegration treatment was 5 times. Example 13 was carried out. In the same plating step as in Example 10, during the plating step, fine particles were continuously taken out from the processing chamber 13 along with the plating solution, and a high-pressure homogenizer (manufactured by Mifa Kogaku Co., Ltd., microfluidized bed M_11) was used. γ), perform a crushing treatment under a pressure of 500 kg / cm2, and then return to the processing chamber 13 and repeat this operation until the plating is completed. This is the flow chart of the circulation system combining the electroplating device and the pulverizing device. As shown in FIG. 15 'Insert the microparticle extraction tube from the opening above the processing chamber, insert 221 (the front end of the extraction tube is arranged near the contact ring U), and plate the plating solution and the suspension of the particles near the contact ring. The particle application pump 231 is sent to a container 214. The plating solution and fine particle suspension 215 sent to the container 214 are supplied into the chamber 218 by the pump 216, and are reduced to a single particle by pressure reduction and impact force, and returned to the processing chamber 13 through the pulverized fine particle supply pipe 222. . In this manner, conductive fine particles having a nickel plating layer formed on the surface were obtained. Comparative Example 6 and Example 10 were subjected to the same plating steps to obtain conductive fine particles having a nickel-plated layer formed on the surface, but no disintegration step was performed. The results of Examples 10 to 13 and Comparative Example 6 are shown in Table 4. in. _____ §2 _____ _ Standard CNS of this paper) Λ4 specification (210 > < 297 male pairs) H ΐ 衣 .. " Order_] line (please read the note on the back first and then ^ for this page) 459072 Λ7 V. Description of the invention Table 4 Number of disintegration treatments Whether there are peeling marks or injuries on the degree of aggregation Example 10 1st level 2nd level 2nd example 11 3rd level 3rd level example 12 5th level 0th level 4th level Example 13 Continuous disintegration of level 0, level 0, and comparative example 6 Without level 3, level 0, it can be seen from Table 4 that if the disintegration treatment is performed after the plating is completed (Example 10), it is agglomerated compared to Comparative Example 6. The amount will decrease. However, the plated surface may be peeled or scratched due to the disintegration treatment. Increasing the number of disintegration treatments can reduce the amount of agglomeration, which is almost zero at five times, but the number of particles with peeling marks and scratches on the surface increases. • Regarding the circulation method (Example 13) in which the electroplating device and the pulverizing device are combined, since the plating process and the disintegrating process are repeatedly performed from the initial stage, there is almost no aggregation, and no peeling marks on the particle surface can be obtained. Wound plated film. Example 14 Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives (read the precautions on the back and then gi 'on this page). A conductive base layer was formed on the organic resin fine particles obtained by copolymerizing styrene and divinylbenzene. The nickel-plated layer was used to obtain nickel-coated fine particles having an average particle diameter of 15.24 / im 'standard deviation 0.70 // m. 10.0 g of the obtained nickel-coated microparticles were taken, and the surface was subjected to nickel plating using a conductive microparticle manufacturing apparatus shown in FIG. 1. Porous body 12, which is _QQ__ of porous body made of polypropylene with a pore size of 70 μm. This paper size is applicable to Chinese National Standards (CNS) Λ4 Current 梏 (210X 297 public 筇) 459072 Λ7 V. Description of the invention (only especially) Treatment A 10 # m filter made of nylon is attached to the inner side of the chamber. The anode 2a uses metallic nickel. The plating solution uses a watt bath. The temperature of the plating solution is 50 ° C, the current is 36A, and the current density is 0.1. 36A / dm2 'Voltage is 15 ~ 16V' Under this condition, energize between the two electrodes for 20 minutes. The peripheral speed of the processing chamber is 250m / min '. The rotation direction is reversed every 11 seconds from the processing chamber 13 continuously during the plating step The fine particles are taken out together with the plating solution, and a homogeneous mixer (produced by Special Machinery Co., Ltd., τ · κ. Tube · line homogeneous mixer PL-SL) is used to perform a disintegration treatment at 5000 rpm, and then returned. This process is repeated in the processing chamber 13 until the plating is completed. The flow chart of the cycle method of combining the electroplating device and the pulverizing device in this way is shown in FIG. I6. As shown in FIG. 16, from the opening above the processing chamber Insert the microparticle extraction tube 221 (the tip of the extraction tube is Near the contact ring 11) 'Remove the plating solution and the suspension of fine particles near the contact ring, disintegrate them by the pipeline homomixer 225, and return them to the processing chamber Π through the disintegrated fine particle supply pipe 222. Conductive fine particles having a nickel-plated layer formed on the surface. Comparative Example 7 The same plating steps as in Example 14 were performed to obtain conductive fine particles with a nickel-plated layer formed on the surface, but no disintegration step was performed. Example The results of 14 and Comparative Example 7 are shown in Table 5. (Please read the precautions on the back before writing this page)-Order the work of the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperation Du printed 5 —... 1 η The number of processing Degree of agglomeration 1 Whether there are peeling marks or injuries? Q1 This paper size is applicable to China National Standards (CNS) Λ4 Regulations (210X2y7 Gong) Printed by the Shell Standard Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (1) 4 5 9 0 7 ^ A7 _B7 Example Η Lianto crushed Grade 0 Grade 1 Comparative Example 7 JWS Grade 3 Grade 0 Example 15 The organic resin fine particles obtained by copolymerizing styrene and divinylbenzene were formed as Plating of conductive substrate The nickel layer was used to obtain nickel-coated fine particles having an average particle diameter of 6.74 / zm and standard deviation. The obtained fine particles were subjected to the same nickel plating as in Example 5 to obtain an average particle diameter of 8. ^ m of nickel-plated microparticles. The obtained nickel-coated microparticles were taken, and nickel-plated β porous bodies 12 were formed on the surface using a conductive microparticle manufacturing apparatus shown in FIG. 1, and the porous bodies were made of polypropylene with a pore size of 70 / im. A nylon filter is attached to the inner side of the processing chamber. ^ The anode 2a is made of metallic nickel. The plating solution is made of an alkanesulfonic acid solder bath. In the composition of the bath, 60 ml / L of alkane sulfonate, 30 ml / L of lead alkane sulfonate, 1 ml / L of free alkane sulfonate, and 80 ml / L of gloss agent »The temperature of the mineral liquid is 20 ° C, The current is 80.6A and the current density is 0_75A / dm2 'The voltage is 16 ~ 17V' Under this condition, the current is applied between the two electrodes for 15 minutes. The peripheral speed of the processing chamber is 250 m / min. The direction of rotation is reversed every 15 seconds during the plating step. The particles are continuously taken out from the processing chamber 13 along with the plating solution, and a static mixer (manufactured by Seika Chemical Industry Co., Ltd.) is used. , Τκ._ ROSS ISG mixer) apply a crushing treatment, and then return to the processing chamber 13 and repeat this operation until the plating is completed. In this way, the circulation method of combining the electric mining device and the pulverizing device ---- 92___ _ This paper size applies the Chinese National Standard (CNS) Λ4 specification (210x297 public waste)-~ ini I order I line '--.. 1 / (Please read the precautions on the back before filling in this page) Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 409072 V. Description of Invention ('〇) The picture is shown in Figure Π. As shown in FIG. 17, the microparticle extraction tube 221 is inserted from the opening above the processing chamber (the front end portion of the extraction tube is arranged near the contact ring 11), and the plating solution and the suspension of the microparticles near the contact ring are taken out. The static mixer 226 is pulverized and returned to the processing chamber i3 through the pulverized fine particle supply pipe 2U. In this manner, conductive fine particles having a nickel plating layer formed on the surface were obtained. Comparative Example 8 The same plating step as in Example 6 was performed to obtain conductive fine particles having a nickel plating layer on the surface, but the disintegration step was not performed. The results of Example 15 and Comparative Example 8 are shown in Table 6. Table 6 _ Number of disintegration treatments Whether there are peeling marks or injuries on the degree of aggregation Example 15 Continuous disintegration Grade 0 Grade 1 Comparative Example 8 No Grade 4 Grade 0 Example 16 Obtained by copolymerization of styrene and divinylbenzene A nickel-plated layer was formed on the organic resin fine particles as a conductive base layer, and nickel-coated fine particles having an average particle diameter of 2.98 μm and a standard deviation of 0.22 μm were obtained. 8.Og of the obtained rhenium-coated microparticles was taken, and the surface was subjected to nickel plating using the conductive microparticle manufacturing apparatus shown in Fig. 1. The porous body 12 is formed by attaching a nylon 10 #m membrane filter to a processing chamber side inner side surface of a porous body made of polypropylene and having a diameter of 70 #m. The trapping efficiency of the 2ym particles of this membrane filter is 98% '3 # m _________________- ^^^^ Chinese National Standard (〇 ^) 八大 格 (210' 乂 297 公 #) ------- -^ 装 ------ · 玎 ------ Μ (Please read the precautions on the back before proceeding-¾ this page) 40 ^ 0 72 A7 B7 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Description of the invention (%) The capture efficiency of particles is above 99-9%. The anode 2a is made of metal. The plating solution uses a Watt bath. The temperature of the mineral liquid is 50 ° C, the current is 36A, the current density is 0.20A / dm2, and the voltage is 16 to 17V. Under this condition, electricity is applied between the two electrodes for 50 minutes. The peripheral speed of the processing chamber is 250 m / min, and the rotation direction is reversed every 15 seconds. During the plating step, the particles are continuously taken out from the processing chamber 13 along with the plating solution, and an ultrasonic generator (Ttsui Rika Chemical Co. (Ultrasonic cleaner AU-70C) 'The crushing treatment is performed at a frequency of 28 kHz / s, and then returned to the processing chamber 13, repeating this operation until the plating is completed. A flowchart of the circulation mode is shown in FIG. 18. As shown in FIG. 18, the microparticle extraction tube 221 is inserted through the opening above the processing chamber (the front end of the extraction tube is arranged near the contact ring ^), and the plating solution and the suspension of the particles near the contact ring are plated. The fine particle extraction pump 231 is sent to a glass container 229. The plating solution and microparticle suspension 215 sent to the container 229 are singulated by the ultrasonic pulverization effect of the ultrasonic generator 227, and are returned to the processing from the pulverized particle supply pipe 222 by the pulverized particle delivery pump Room 13. In this way, conductive fine particles having a nickel-plated layer on the surface β were obtained. Comparative Example 9 The same plating step as in Example 16 was performed to obtain conductive fine particles having a nickel-plated layer on the surface, but the disintegration step was not performed. . The results of Example 16 and Comparative Example 9 are shown in Table 7. (Please read the precautions on the back before you go to this page?)-Pack. Order

本紙張尺度適用中國國家縣（CNS) Λ4Μ^ 1[)x297々U 經濟部中央標準局貝工消费合作社印" 459072 五、發明説明 表7 解碎處理數 凝麵度 是否有刹離痕、傷 實施例16 連續解碎 第1級 第0級 比較例9 Μ j\\\ 第4級 第0級 實施例17 在苯乙烯和二乙烯苯共聚合所得之比重1.19、平均粒 徑98.76#m、標準偏差1.48、變動係數1.5%之有機樹脂 微粒子上’使用無電解鍍敷法形成作爲導電基底層之鍍鎳 層，而得出無電解鍍敷膜厚2000埃之無電解鍍鎳微粒子。 取所得的無電解鍍鎳微粒子20g，使用圖19所示的本發明 11之導電性微粒子製造裝置以於其表面進行鍍鎳。 處理室315，係使用在設有多數穿孔（φ5)之樹脂製 (HT.-PVC)板的內側面貼附尼龍製的孔徑10/zm、厚10#m 過濾板所構成之隔板314以彤成出，而使處理室315內的 微粒子不致漏至鑛槽313內。 處理室315係形成其內的粒子移動距離a爲40mm。 多孔體12係使用高密度聚乙烯製之孔徑ι〇〇μαι、厚 6mm之環狀多孔體。陽極2a係使用金屬鎳。 鍍液係使用瓦特浴。鍍液的組成中，鎳濃度42g/L、 氯化鎳39g/L、硫酸鎳i5〇g/L、硼酸31g/L，鍍液之pH爲 3.8，鍍液比重爲1.11。 鍍液的溫度爲50 t，電流爲34A，電流密度 〇.37A/dm2 ’在此條件下於兩電極間通電。運轉條件係將鍍 槽Π的旋轉數設定成使離心效果成爲1〇·3 〇所使用之鍍槽 ________—仍_ 本紙張纽财晒家料（⑽）AAim ( 2IOX 297^>1m ~~— - (請先閱讀背面之注意事項再#'爲本頁)This paper size is applicable to China National Counties (CNS) Λ4Μ ^ 1 [) x297々U Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs " 459072 V. Description of invention Table 7 Injury Example 16 Continuously disintegrating Grade 1 Grade 0 Comparative Example 9 Μ j \\\ Grade 4 Grade 0 Example 17 The specific gravity obtained by copolymerizing styrene and divinylbenzene was 1.19, and the average particle size was 98.76 # m On the organic resin fine particles with a standard deviation of 1.48 and a coefficient of variation of 1.5%, a nickel-plated layer was formed as a conductive base layer using an electroless plating method, and electroless nickel-plated particles having a thickness of 2000 angstroms were obtained. 20 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus of the present invention 11 shown in Fig. 19. The processing chamber 315 is a partition plate 314 formed by attaching a nylon 10 / zm, 10 # m filter plate made of nylon on the inner side of a resin (HT.-PVC) plate provided with a large number of perforations (φ5). It is formed so that the fine particles in the processing chamber 315 do not leak into the pit 313. The processing chamber 315 is formed so that the particle moving distance a is 40 mm. The porous body 12 is a ring-shaped porous body made of high-density polyethylene and having a pore diameter of ιιομιι and a thickness of 6 mm. The anode 2a is made of metallic nickel. The plating solution uses a Watt bath. In the composition of the plating solution, the nickel concentration was 42 g / L, nickel chloride 39 g / L, nickel sulfate i50 g / L, and boric acid 31 g / L. The pH of the plating solution was 3.8, and the specific gravity of the plating solution was 1.11. The temperature of the plating solution was 50 t, the current was 34 A, and the current density was 0.37 A / dm2 'under this condition, current was applied between the two electrodes. The operating condition is to set the number of rotations of the plating tank Π so that the centrifugal effect becomes 10.3. The plating tank used is ________— still_ This paper New Cai drying home materials (⑽) AAim (2IOX 297 ^ > 1m ~ ~ —-(Please read the notes on the back before # 'for this page)

、1T 妹. 459072 A7 B7 五、發明説明（) 13內徑爲280mm ’旋轉數爲256.5rpm ’接觸環11內側面 的周速爲225.6in/min 〇以粒子移動時間2秒、通電時間5 秒、減速時間1秒、停止時間〗秒之合計9秒爲1循環， 重覆正轉和逆轉。此時，通電率（1循環中通電時間的比例) 爲55.6%。總鍍敷時間約72分。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 先學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 。又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲103.40 βπι，鍍鎳層的厚爲2.12ym。粒徑的變動係數爲2.7%， 而証明出鍍鎳層的厚相當均一。又，未發現出有因雙極現 象而使基底鍍鎳層溶解之粒子。 實施例18 .使用實施例17所用之無電解鍍鎳微粒子，除運轉條 件係以粒子移動時間2秒、通電時間5秒、減速時間1秒 、停止時間0秒之合計8秒爲I循環外，係和實施例17相 同地進行鍍鎳。此時，通電率（1循環中通電時間的比例)爲 62.5%。總鍍敷時間約64分。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 。又’此經鍍鎳的樹脂微粒子300個的平均粒徑爲103.26 ，鍍鎳層的厚爲2.05。粒徑的變動係數爲2.9%， 而証明出鍍鎳層的厚相當均一。又，未發現出有因雙極現 象而使基底鍍鎳層溶解之粒子》 實施例19 ____—______________________ 本紙张尺度適用中國國家標準（CNS ) Λ4^格（210X297公处） (請先閱讀背面之注意事項再济辑本頁) 訂 經濟部中央標準局貝工消费合作社印製 經濟部中央標挲局员工消费合作社印製 459072 五、發明説明（yep 使用實施例π所用之無電解鍍鎳微粒子，除下述項 目以外係和實施例相同地進行鍍鎳。 處理室315係形成其內的粒子移動距離Α爲15mm。 運轉條件係以粒子移動時間1秒、通電時間5秒、減 速時間1秒、停止時間0秒之合計7秒爲1循環。此時， 通電率（1循環中通電時間的比例)爲71.4%。總鍍敷時間約 56分。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 。又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲103.34 ，鍍鎳層的厚爲2.09#m。粒徑的變動係數爲2.8%， 而証明出鍍鎳層的厚相當均一。又，未發現出有因雙極現 象而使基底鍍鎳層溶解之粒子。 比較例9-1 使用實施例17所用之無電解鍍鎳微粒子20g，並使用 圖20所示之習知的導電性微粒子製造裝置外，係進行和實 施例Π相同的鍍鎳。 習知的導電性微粒子製造裝置中，由於粒子移動距離 長，微粒子在靠近接觸環前就會開始通電，將產生雙極現 象，半數以上的微粒子之無電解鍍敷層會溶解，無法進行 鍍敷。 實施例20 在苯乙烯和二乙烯苯共聚合所得之平均粒徑203·18μ m、標準偏差3.〇5#ηι、變動係數I.5%的有機樹脂微粒子 ------9^--- 本紙张尺度適用中國國家標準（CNS )八4現格（21 0 X 297公筇） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標導局負工消费合作社印製 459072 A7 B7_________ 五、發明説明（PC) 上形成作爲導電基底層之鍍鎳層，而得出平均粒徑208.29 #111、標準偏差4.58；«111、變動係數2.2%之鍍鎳微粒子(鎳 膜厚約2.5ym)。取所得的鍍鎳微粒子30.0g，使用圖11 所示的導電性微粒子製造裝置以於其表面進行鍍共晶銲錫 〇 所使用之多孔體12,係在高密度聚乙烯製之孔徑100 #m、厚6mm的板狀多孔質保持體22上面貼附尼龍製的孔 徑厚ΙΟμηι的片狀過濾器20所構成^ 陽極2a係使用錫：鉛=6 : 4之合金^ 鍍液係使用石原藥品株式會社製之酸性浴(537A)。 鍍液的組成中，總金屬濃度21.39g/L，溶中的金屬比 例Sn%=65.3% ’焼醇礦酸106.4g/L，含添加劑40mL。 ，鍍液的溫度爲20°C，電流爲24.8A，電流密度 0.5A/dm2，在此條件下於兩電極間通電。 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲256.5rpm ’周速爲225.6m/min β通電步驟的運轉模式，係以粒子移 動時間2秒、通電時間6秒、減速時間0.5秒、停止時間2 秒爲1循環：攪梓步驟的運轉模式，係以旋轉時間1秒、 減速時間0.5秒、停止時間1秒爲1循環，交替地進行通 電步驟和攪拌步驟。總鍍敷時間約83分。 運轉條件的時序圖顯示於圖21中β 將如此般所得之最外殼爲鍍共晶銲錫層之鍍共晶銲錫 樹脂微粒子以光學顯微鏡觀察時，所有的粒子都未凝集而 ----28_____ 本紙張尺度適用中國國家標準（CNS ) Λ4坭；)¾ ( 210x 297公处） -----------^------ΐτ---1--碎 《請先閱讀背面之注意事項再#式本頁) 經濟部中央標卒局®cJt.消费合作社印製 459072 五、發明説明（ft) 以單粒子存在。 又，此經鍍共晶銲鍚的樹脂微粒子300個的平均粒徑 爲219.47//m，鎪銲錫層的厚爲5.59 。粒徑的變動係數 爲3.1%，而証明出鍍銲錫層的厚相當均一。又’表面沒有 傷痕等的產生。 將所得的銲錫被膜以原子吸光法分析時’ Sn爲61·3% ，而証明其共晶組成。 實施例21 使用和實施例20完全相同的鍍鎳微粒子（平均粒徑 208.29/im、標準偏差4.5^m、變動係數2.2%、鎳膜厚約 2.5々m)，除運轉條件如以下般變更外’係和實施例20相 同地進行鍍共晶銲錫。 .於設定電流値74.5A、電流密度1.5A/dra2下進行鍍敷 〇 運轉條件係將處理室的旋轉數設定成使離心效果成爲 1〇·3 »所使用之處理室內徑爲280mm，旋轉數爲256.5rpm ，周速爲225.6m/mine通電步驟的運轉模式，係以粒子移 動時間2秒、通電時間6秒 '減速時間0.5秒、停止時間2 秒爲1循環；攪拌步驟的運轉模式，係以旋轉時間1秒、 減速時間0.5秒、停止時間1秒爲1循環。鍍敷係採相對 通電步驟1循環攪拌步驟爲4循環之比例，並在通電步驟 和攪拌步驟中反覆地進行正逆旋轉。總鍍敷時間約49分。 運轉條件的時序圖顯示於圖22中。 將如此般所得之最外殼爲鍍共晶銲錫層之鍍共晶銲錫 (婧先閱讀背面之注意事項再^寫本頁)、 1T sister. 459072 A7 B7 V. Description of the invention () 13 Internal diameter is 280mm 'Rotation number is 256.5rpm' The peripheral speed of the inside surface of the contact ring is 225.6in / min 〇 2 seconds for particle movement time, 5 seconds for energization time The deceleration time is 1 second, and the stop time is 9 seconds, which is a total of 9 seconds for 1 cycle, repeating forward and reverse. At this time, the energization rate (proportion of energization time in one cycle) was 55.6%. The total plating time is about 72 minutes. When the nickel-plated resin fine particles having the nickel-plated outer shell as the outer shell were observed under a prior microscope, all particles were not aggregated and existed as single particles. The average particle diameter of 300 nickel-plated resin fine particles was 103.40 βm, and the thickness of the nickel-plated layer was 2.12 μm. The coefficient of variation of the particle size was 2.7%, which proved that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 18 The electroless nickel-plated microparticles used in Example 17 were used, except that the operating conditions were a total of 8 seconds as a cycle of particle movement time of 2 seconds, energization time of 5 seconds, deceleration time of 1 second, and stop time of 0 seconds. The nickel plating was performed in the same manner as in Example 17. At this time, the energization rate (proportion of energization time in one cycle) was 62.5%. The total plating time is about 64 minutes. When the nickel-plated resin fine particles whose outermost shell was the nickel-plated layer were observed under an optical microscope, all particles were not aggregated and existed as single particles. The average particle diameter of 300 nickel-plated resin fine particles was 103.26 and the thickness of the nickel-plated layer was 2.05. The coefficient of variation of the particle size was 2.9%, which proved that the thickness of the nickel plating layer was quite uniform. Also, no particles were found to dissolve the nickel plating on the substrate due to the bipolar phenomenon. Example 19 ____—______________________ This paper size applies to the Chinese National Standard (CNS) Λ4 ^ grid (210X297). (Please read the back Note on this page) Order the print by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Cooper ’s Consumer Cooperative, and printed by the Central Consumers ’Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative of the Ministry of Economic Affairs, and printed by 459072. 5. Description of the invention Except for the following items, nickel plating was performed in the same manner as in the examples. The processing chamber 315 was formed so that the particle moving distance A was 15 mm. The operating conditions were particle moving time of 1 second, energization time of 5 seconds, deceleration time of 1 second, A total of 7 seconds of the stop time of 0 seconds is 1 cycle. At this time, the energization rate (the proportion of the energization time in 1 cycle) is 71.4%. The total plating time is about 56 minutes. The outermost shell obtained in this way is a nickel plating layer. When the nickel-plated resin fine particles were observed with an optical microscope, all the particles did not aggregate and existed as single particles. In addition, the average particle size of the 300 nickel-plated resin fine particles was 103.34. The thickness of the nickel layer was 2.09 # m. The coefficient of variation of the particle size was 2.8%, and it was proved that the thickness of the nickel plating layer was quite uniform. Moreover, no particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 9-1 Using the electroless nickel-plated microparticles 20g used in Example 17, and using the conventional conductive microparticle manufacturing apparatus shown in Fig. 20, the same nickel plating was performed as in Example Π. Conventional conductivity In the microparticle manufacturing apparatus, since the particles move a long distance, the microparticles will start to be energized before approaching the contact ring, and a bipolar phenomenon will occur, and the electroless plating layer of more than half of the microparticles will dissolve and cannot be plated. Example 20 In Organic resin fine particles with an average particle size of 203 · 18 μm, standard deviation of 3.05 # η, and coefficient of variation of I.5% obtained by copolymerization of styrene and divinylbenzene -------- 9 ^ --- This paper Standards are applicable to Chinese National Standards (CNS) 8 and 4 grids (21 0 X 297 gong) (Please read the notes on the back before filling out this page) Order printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 459072 A7 B7_________ 5 , Invention Description (PC) The nickel-plated layer of the electric base layer yields an average particle diameter of 208.29 # 111, standard deviation of 4.58; «111, nickel-plated microparticles with a coefficient of variation of 2.2% (the thickness of the nickel film is about 2.5ym). Take 30.0g of the obtained nickel-plated microparticles The porous body 12 used for eutectic solder plating on the surface using the conductive fine particle manufacturing apparatus shown in FIG. 11 is held in a plate-like porous body made of high-density polyethylene with a pore diameter of 100 #m and a thickness of 6 mm. The body 22 is attached to a sheet filter 20 made of nylon and having a pore thickness of 10 μm. The anode 2a is made of an alloy of tin: lead = 6: 4. The plating solution is an acid bath (537A) made by Ishihara Pharmaceutical Co., Ltd. In the composition of the plating solution, the total metal concentration was 21.39 g / L, and the ratio of the dissolved metal was Sn% = 65.3%. The fluorenol mineral acid was 106.4 g / L, and the additive contained 40 mL. The temperature of the plating solution is 20 ° C, the current is 24.8A, and the current density is 0.5A / dm2. Under this condition, current is passed between the two electrodes. The operating conditions were such that the number of rotations of the processing chamber was set to a centrifugal effect of 10.3. The processing chamber used has a diameter of 280 mm and a rotation number of 256.5 rpm. The peripheral speed is 225.6 m / min. The operation mode of the β energization step is based on particle movement time of 2 seconds, energization time of 6 seconds, deceleration time of 0.5 seconds, and stop time of 2 One cycle per second: The operation mode of the agitation step is a cycle in which the rotation time is 1 second, the deceleration time is 0.5 seconds, and the stop time is 1 second, and the power-on step and the stirring step are alternately performed. The total plating time is about 83 minutes. The timing diagram of the operating conditions is shown in Fig. 21. When the eutectic-plated solder resin fine particles with the outermost shell as the eutectic solder layer obtained in this way were observed with an optical microscope, all the particles did not agglomerate. Paper size applies Chinese National Standard (CNS) Λ4 坭;) ¾ (210x 297 public places) ----------- ^ ------ ΐτ --- 1-- (Notes on the back page #) This page) Printed by the Central Bureau of Standards of the Ministry of Economic Affairs® cJt. Consumer Cooperative Co., Ltd. 459072 5. The invention description (ft) exists as a single particle. In addition, the average particle diameter of 300 resin fine particles coated with the eutectic solder was 219.47 // m, and the thickness of the solder layer was 5.59. The coefficient of variation of the particle size was 3.1%, which proved that the thickness of the solder plating layer was quite uniform. There are no scratches on the surface. When the obtained solder film was analyzed by atomic absorption method, 'Sn was 61.3%, and its eutectic composition was proved. Example 21 The same nickel plated fine particles as in Example 20 (average particle size of 208.29 / im, standard deviation of 4.5 ^ m, coefficient of variation of 2.2%, and nickel film thickness of about 2.5々m) were used, except that the operating conditions were changed as follows The 'eutectic solder plating was performed in the same manner as in Example 20. .Plating at a set current of 74.5A and a current density of 1.5A / dra2. The operating conditions are to set the number of rotations of the processing chamber so that the centrifugal effect becomes 1 · 3 »The diameter of the processing chamber used is 280mm and the number of rotations The operation mode is 256.5 rpm, and the peripheral speed is 225.6m / mine. The cycle is based on particle movement time of 2 seconds, power-on time of 6 seconds, deceleration time of 0.5 seconds, and stop time of 2 seconds. The rotation time is 1 second, the deceleration time is 0.5 second, and the stop time is 1 second. The plating is performed at a ratio of 4 cycles to the energizing step 1 cycle stirring step, and is repeatedly rotated forward and backward during the energizing step and the stirring step. The total plating time is about 49 minutes. A timing chart of the operating conditions is shown in FIG. 22. Use the eutectic solder layer as the outermost shell of the eutectic solder layer (Jing first read the precautions on the back before writing this page)

、1T 踩· 本^張尺用中國國家標绛（CNS ) ( 210X2^公;~ A7 經濟部中央標準局貝工消费合作社印聚 459072 五、發明説明d 樹脂微粒子以光學顯微鏡觀察時，所有的粒子都未凝集而 以單粒子存在。 又，此經鍍共晶銲錫的樹脂微粒子300個的平均粒徑 爲219.43#m，鍍銲錫層的厚爲5.57ym。粒徑的變動係數 爲3.3%，而証明出鑛輝錫層的厚相當均一。 將所得的銲錫被膜以原子吸光法分析時，Sn爲62.8% ’而証明其共晶組成。 比較例10 使用和實施例20完全相同的鍍鎳微粒子（平均粒徑 208.29//m '標準偏差4.58vm、變動係數2.2%、鎳膜厚約 ，除運轉條件如以下般變更外，係和實施例20相 同地進行鍍共晶銲錫。 .於設定電流値24.8A、電流密度0.5A/dm2下進行鍍敷 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲256.5rpm ，周速爲225.6m/min。通電步驟的運轉模式，係以粒子移 動時間2秒、通電時間6秒、減速時間0.5秒、停止時間2 秒爲1循環；攪拌步驟未導入，僅在通電步驟中反覆地進 行正逆旋轉以施加鍍敷。總鍍敷時間約62分。 運轉條件的時序圖顯示於圖23中。 將如此般所得之最外殼爲鍍共晶銲錫層之鍍共晶銲錫 樹脂微粒子以光學顯微鏡觀察時，存在有多數個3~10個粒 子左右所形成的凝集塊，故証明出在未導入攪拌步驟下， _1QQ ............. 本紙張尺度適用中國國家標準（CNS)A4%^ ( 210Χ297公泣） (請先閲讀背面之注意事項再咏衮本頁)、 1T step · This ^ Zhang ruler uses the Chinese National Standard (CNS) (210X2 ^ public; ~ A7 Printing and Printing Co., Ltd., Shellfish Consumer Cooperative, Central Standards Bureau of the Ministry of Economic Affairs Ⅴ. When the resin fine particles are observed with an optical microscope, all None of the particles were aggregated and existed as single particles. In addition, the average particle diameter of the 300 eutectic solder-coated resin fine particles was 219.43 # m, and the thickness of the solder plating layer was 5.57 μm. The coefficient of variation of the particle diameter was 3.3%, It was proved that the thickness of the mined tin layer was quite uniform. When the obtained solder coating film was analyzed by atomic absorption method, Sn was 62.8% and the eutectic composition was proved. Comparative Example 10 The same nickel-plated particles as in Example 20 were used. (The average particle diameter is 208.29 // m 'standard deviation 4.58 vm, coefficient of variation 2.2%, nickel film thickness is approximately, except that the operating conditions were changed as follows, eutectic solder plating was performed in the same manner as in Example 20. At the set current条件 The operating conditions for plating at 24.8A and current density of 0.5A / dm2 are to set the number of rotations of the processing chamber so that the centrifugal effect becomes 10.3. The diameter of the processing chamber used is 280mm, the number of rotations is 256.5rpm, and the peripheral speed is 225.6 m / min. Power on step This mode is based on a particle movement time of 2 seconds, energization time of 6 seconds, deceleration time of 0.5 seconds, and stop time of 2 seconds as a cycle. The stirring step is not introduced, and only forward and reverse rotation is performed in the energization step to apply plating. The total plating time is about 62 minutes. The timing chart of the operating conditions is shown in Figure 23. When the eutectic-plated solder resin fine particles having the outermost shell as the eutectic solder layer obtained in this way are observed with an optical microscope, there are many Agglomerates formed by about 3 to 10 particles, so it turns out that without introducing the stirring step, _1QQ ............. This paper size is applicable to China National Standard (CNS) A4% ^ (210 × 297 Weeping) (Please read the notes on the back before chanting this page)

4 經濟部中央標準局員工消费合作社印製 5 90 72 a7 __ B7_ __ 五、發明説明) 在和實施例20的通電時間時會發生凝集塊。 比較例11 使用和實施例20完全相同的鍍鎳微粒子（平均粒徑 208.29#m、標準偏差4.58从m、變動係數2,2%、鎳膜厚約 2.5 y m)，除運轉條件如以下般變更外’係和實施例20相 同地進行鍍共晶銲錫。 於設定電流値74.5Α、電流密度1.5A/dm2下進行鑛敷 〇 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mra ’旋轉數爲256.5rpm ，周速爲225.6m/min〇通電步驟的運轉模式，係以粒子移 動時間2秒、通電時間3秒、減速時間0.5秒、停止時間2 秒爲1循環；攪拌步驟未導入，僅在通電步驟中反覆地進 行正逆旋轉以施加鍍敷。總鍍敷時間約62分。 運轉條件的時序圖顯示於圖24中。 將如此般所得之最外殼爲鍍共晶銲錫層之鍍共晶銲錫 樹脂微粒子以光學顯微鏡觀察時，存在有多數個5〜15個粒 子左右所形成的凝集塊，故証明出在未導入攪拌步驟下， 在和實施例的通電時間時會發生凝集塊。 實施例20、21及比較例10、11的結果顯示於表8中 -------I — —------'玎------# (請先閱讀背面之注意亊項再ίί·.&本頁) 〇 表8 電流 式揪） 總鑛数 有無 縮合 密度 通電步驟 携拌步驟 時間 凝集 本紙乐尺度適用中國國家標準 ( CNS ) Λ4規梠（210Χ297公处） A7 B7 A/din2 移動 通電 減速 停止 旋耨 減辣 停ih 重雜 份） 物 實施 例20 0,5 2 6 0.5 2 2 0.5 1 1 83 無 〇 實施 例21 1.5 2 6 0.5 2 2 0.5 1 4 49 無 ◎ 比較 例10 0·5 2 6 0.5 2 — - — 一 62 有 X 比較 钶11 1.5 2 3 0.5 2 — 一 — — 30 有 X 實施例22 4b9072 五、發明説明) (請先閲讀背面之注意事項再填荇本頁) 在苯乙烯和二乙烯苯共聚合所得之比重1.19、平均粒 徑65〇.38#m、標準偏差9.75、變動係數1.5%之有機樹脂 微粒子上，使用無電解鍍敷法形成作爲導電基底層之鍍鎳 層，而得出無電解鍍敷膜厚5000埃之無電解鍍鎳微粒子。 所得無電解鍍鎳微粒子的比重爲1.255。 取所得的無電解鑛鎳微粒子105g，使用圖1所示的導 電性微粒子製造裝置以於其表面進行鍍鎳。 所使用之多孔體12,係在高密度聚乙烯製之孔徑100 、厚6mm之板狀多孔質保持體的上面，貼附尼龍製的 孔徑10/zm、厚lO/zm之過爐板所構成。 陽極2a係使用金屬鎳。 鍍液係使用瓦特浴。鍍液的組成中，鎳濃度68g/L、 氯化鎳42g/L '硫酸鎳26〇g/L、硼酸42g/L，鍍液之pH[爲 3.7，鍍液比重爲1.18。 _________1H2_______ ^紙張尺度適用中國國家標準(CNS)A4^^( 210X297々#)4 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5 90 72 a7 __ B7_ __ V. Description of the invention) Agglomerates will occur during the power-on time of Example 20. Comparative Example 11 The same nickel plating particles as in Example 20 were used (average particle size: 208.29 # m, standard deviation: 4.58 m, coefficient of variation: 2,2%, nickel film thickness: about 2.5 ym), except that the operating conditions were changed as follows. The outer system was subjected to eutectic solder plating in the same manner as in Example 20. Mining was performed at a set current of 74.5A and a current density of 1.5A / dm2. The operating conditions were such that the number of rotations of the processing chamber was set to a centrifugal effect of 10.3. The working chamber diameter used is 280mra, the rotation number is 256.5rpm, and the peripheral speed is 225.6m / min. The operation mode of the power-on step is based on particle movement time of 2 seconds, power-on time of 3 seconds, deceleration time of 0.5 seconds, and stop time of 2 One second is one cycle; the stirring step is not introduced, and only forward and reverse rotation is performed in the energization step to apply plating. The total plating time is about 62 minutes. A timing chart of the operating conditions is shown in FIG. 24. When the eutectic-plated solder resin fine particles having the outermost shell as the eutectic-plated solder layer were observed with an optical microscope, there were agglomerates formed by about 5 to 15 particles. Therefore, it was proved that the stirring step was not introduced In the following, an agglomerate occurs at the power-on time of the embodiment. The results of Examples 20 and 21 and Comparative Examples 10 and 11 are shown in Table 8 ----- I--------- '玎 ------ # (Please read the note on the back first亊 Item again .. & this page) 〇 Table 8 Current type 揪) Total ore number with or without condensation density electrification step Carrying step time agglutination Paper scale Applicable to Chinese National Standard (CNS) Λ4 Regulations (210 × 297) A7 B7 A / din2 Mobile energization, deceleration, stop, rotation, reduction, and stop, ih, heavy impurities) Example 20 0,5 2 6 0.5 2 2 0.5 1 1 83 None. Example 21 1.5 2 6 0.5 2 2 0.5 1 4 49 None ◎ Comparative Example 10 0 · 5 2 6 0.5 2 — — — 62 with X Comparison 钶 11 1.5 2 3 0.5 2 — 1 — — 30 With X Example 22 4b9072 V. Description of the invention (Please read the notes on the back first (Refill this page) On the organic resin fine particles obtained by copolymerizing styrene and divinylbenzene with a specific gravity of 1.19, an average particle size of 65.38 # m, a standard deviation of 9.75, and a coefficient of variation of 1.5%, an electroless plating method is used. A nickel plating layer was formed as a conductive base layer, and electroless nickel-plated particles having an electroless plating film thickness of 5000 angstroms were obtained. The specific gravity of the obtained electroless nickel-plated fine particles was 1.255. 105 g of the obtained electroless nickel fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in FIG. 1. The porous body 12 used is made of a high-density polyethylene having a pore size of 100 and a thickness of 6 mm, which is a plate-shaped porous support body, and a paste made of nylon having a pore size of 10 / zm and a thickness of 10 / zm. . The anode 2a is made of metallic nickel. The plating solution uses a Watt bath. In the composition of the plating solution, the nickel concentration was 68 g / L, nickel chloride was 42 g / L, nickel sulfate was 26 g / L, and boric acid was 42 g / L. The pH of the plating solution was 3.7, and the specific gravity of the plating solution was 1.18. _________1H2_______ ^ Paper size applies to Chinese National Standard (CNS) A4 ^^ (210X297々 #)

，tT 牌， 經濟部中央標準局員工消*ί合作社印製 A7 459072 五、發明説明（/,D) 鍍液的溫度爲50°C，電流爲32A，電流密度0.4A/dm2 ，在此條件下於兩電極閭進行總共約80分的通電。處理室 的周速爲226m/min，每11秒將旋轉方向正逆轉。 如上述般，藉由將無電解鍍敷的膜厚增厚，而使微粒 子和浴比重的差形成0.04以上，所有的微粒子將完全靠近 接觸環，而形成均一的鍍層。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在' 。又，依據所得的鍍鎳樹脂微粒子之斷面相片，可確認出 在粒子表面被係均一地鍍敷。又，此經鍍鎳的樹脂微粒子 300個的平均粒徑爲661.18/zm，鍍鎳層的厚爲5.40从m。 粒徑的變動係數爲2.7%，而証明出鍍鎳層的厚相當均一。 又，.未發現出有因雙極現象而使基底鍍鎳層溶解之粒子。 實施例23 在和實施例22完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層，而得出無電 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子l〇5g，使用圖1所示的導 電性微粒子製造裝置以於其表面進行鍍鎳。 除將所用之瓦特浴的組成改成鎳濃度42g/L、氯化鎳 39g/L、硫酸鎳150g/L、硼酸31g/L以外，係在和實施例1 完全相同的條件下進行鍍敷。鍍液之pH爲3.8，鍍液比重 爲 1.Π 0 ______1的 ______________________ 义张尺度適用中國國家標隼（CNS ) Λ4见格（210X297公处） . --I [ 訂 < (請先閱讀背面之注意亊項再#詩本頁) 經濟部中央標隼局貝工消费合作社印1i 45 90 72 經濟部中央標準扃員工消f合作社印製 kl 五、發明説明（p/) 如上述般，即使使無電解鍍敷的膜厚比實施例22薄 而使粒子比重小，藉由降低瓦特浴之電解質濃度而使微粒 子和浴比重的差形成0.04以上，所有的微粒子將完全靠近 接觸環，而形成均一的鑛層。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 。又’依據所得的鍍鎳樹脂微粒子之斷面相片，可確認出 在粒子表面被係均一地鍍敷。又，此經鍍鎳的樹脂微粒子 300個的平均粒徑爲660.72#m，鍍鎳層的厚爲5.170/im 。粒徑的變動係數爲2.7%，而証明出鍍鎳層的厚相當均一 。又，未發現出有因雙極現象而使基底鍍鎳層溶解之粒子 〇 實施例24 於比重2.54、平均粒徑203.67/zm、標準偏差4.10、 變動係數2.0%之玻璃珠上，使用無電解鍍敷法形成作爲導 電基底層之鏟鎳層，而得出無電解鍍敷膜厚600埃之無電 解鍍鎳微粒子。所得無電解鍍鎳微粒子的比重爲2.551。 取所得的無電解鍍鎳微粒子75g，使用圖1所示的導 電性微粒子製造裝置以於其表面進行鍍鎳。 所使用之多孔體12，係在高密度聚乙烯製之孔徑1〇〇 、厚6mm之板狀多孔質保持體的上面，貼附尼龍製的 孔徑10 、厚10/zm之過濾板所構成。 陽極2a係使用金屬鎳。 鍍液係使用瓦特浴。鍍液的組成中’鎳濃度45g/L、 ______um____ 九張尺度適用中國國家摞準（CNS ) Λ4規梠（210X2W公兑） ---------^------II------M (請先閱讀背面之注意事項再#-¾本頁) 459072 經濟部中央標準局員工消费合作社印製 B7 五、發明説明（/ci 氯化鎳45g/L、硫酸鎳300g/L、硼酸45g/L，鍍液之pH爲 3.7，鍍液比重爲 鍍液的溫度爲50 °C，電流爲40A，電流密度 0.90A/dm2,在此條件下於兩電極間進行總共約35分的通 電。處理室的周速爲226m/tnin，每11秒將旋轉方向正逆 轉。 如上述般，藉由使微粒子和浴比重的差形成1.321， 所有的微粒子將完全靠近接觸環，而形成均一的鍍層。 將如此般所得之最外殼爲鍍鎳層之鍍鎳玻璃珠以光學 顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在。又 ，依據所得的鍍鎳玻璃珠之斷面相片，可確認出在粒子表 面被係均一地鍍敷。又，此經鑛鎳的玻璃珠300個的平均 粒徑爲210.13#ιη，鍍鎳層的厚爲3.23μιη。粒徑的變動係 數爲3.7%，而証明出鍍鎳層的厚相當均一。又，未發現出 有因雙極現象而使基底鍍鎳層溶解之粒子 實施例25 取比重8.93、平均粒徑301.45 、標準偏差4.67、 變動係數1·5%之銅微粒子200g，使用圖1所示之導電性微 粒子製造裝匱而於其表面進行鍍鎳。 所使用之多孔體12,係在高密度聚乙烯製之孔徑100 、厚6mm之板狀多孔質保持體的上面，貼附尼龍製的 孔徑、厚之過濾板所構成。 陽極2a係使用金屬鎳。 鍍液係使用瓦特洛。鍍液的組成中，氯化鎳45g/L、 ________1£5_____ 本紙張尺度適用中國國家橾準（（：：1^)44见格（210/ 297公始） ----------hi------IT------踩 (請先閱讀背而之注意事項再墙-¾本頁) 經濟部中央標隼局貞工消费合作社印製 4 69072： A7 B7 五'發明説明I? Μ) 硫酸鎳300g/L、硼酸45g/L，鍍液之pH爲3.7 ’鍍液比重 爲 1.23。 鍍液的溫度爲50°C ’電流爲40A ’電流密度 〇.90A/dm2 ,在此條件下於兩電極間進行總共約35分的通 電β處理室的周速爲226m/min，每11秒將旋轉方向正逆 轉。 如上述般，藉由使微粒子和浴比重的差形成7·7 ’所 有的微粒子將完全靠近接觸環，而形成均一的鍍層。 將如此般所得之最外殼爲鍍鎳層之鍍鎳銅微粒子以光 學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在。 又，依據所得的鍍鎳銅微粒子之斷面相片，可確認出在粒 子表面被係均一地鑛敷。又，此經鍍鎳的銅微粒子3〇〇個 的平均粒徑爲310.38#m，鍍鎳層的厚爲4.46#m。粒徑的 變動係數爲2.8%，而証明出鍍鎳層的厚相當均一又，未 發現出有因雙極現象而使基底鍍鎳層溶解之粒子。 實施例26 取比重11_34、平均粒徑448.76ym、標準偏差7.63 、變動係數1.7%之鉛微粒子200g，使用圖1所示之導電性 微粒子製造裝置而於其表面進行鍍鎳。 所使用之多孔體12,係在高密度聚乙烯製之孔徑1〇〇 em、厚6mm之板狀多孔質保持體的上面，貼附尼龍製的 孔徑10# ηι、厚10# m之過濾扳所構成。 陽極2a係使用金屬鎳。 鍍液係使用瓦特浴。鍍液的組成中，氯化鎳45g/L、 ____—_L00____ (张尺度適用中國國家標準（CNS )八4規枋（210X2y?公棼） ’ (对先"讀背面之注意事項再填荇本頁) -装· 459072 Μ ΒΊ 五、發明説明（~ί|) 硫酸鎳300g/L、硼酸45g/L，鍍液之pH爲3·7，鍍液比重 爲 1.23。 鍍液的溫度爲50°C，電流爲23.5Α，電流密度 Ι.ΟΑ/dm2,在此條件下於雨電極間進行總共約30分的通電 。處理室的周速爲226m/min，每11秒將旋轉方向正逆轉 〇 如上述般，藉由使微粒子和浴比重的差形成10.11， 所有的微粒子將完全靠近接觸環，而形成均一的鍍層β 將如此般所得之最外殼爲鍍鎳層之鍍鎳鉛微粒子以光 學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在。 又，依據所得的鍍鎳鉛微粒子之斷面相片，可確認出在粒 子表面被係均一地鍍敷。又，此經鍍鎳的鉛微粒子300個 的平均粒徑爲459.26/zm，鍍鎳層的厚爲5.25#m。粒徑的 變動係數爲3.1%，而証明出鍍鎳層的厚相當均一。又，未 發現出有因雙極現象而使基底鍍鎳層溶解之粒子 比較例12 於和實施例23完全相同的無電解鍍鎳微粒子（比重 1.204)上，以和實施例1完全相同的鍍敷條件（鑛液比重 1.18)使用圖1所示之導電性微粒子製造裝置以於其表面進 行鍍鎳。 鍍敷微粒子和鍍液的比重差係小至0·024，在微粒子 接觸接觸環前通電就會開始，故會產生多數個基於雙極現 象而使基底層溶解的微粒子。 比較例13 _ __107 ____________ 度適用標準（CNS ) Λ4&枋（2丨0Χ 2^7公及) 裝 訂 腺 (請先間讀背面之注意事項再费寫本頁) 經濟部中央標準局員工消费合作社印製 459072 A7 ___—_____137 五、發明説明（丨bp 於和實施例22完全相同的有機樹脂微粒子上，使用 無電解鍍敷法以形成作爲導電基底層之鍍鎳層，而得出無 電解鎳膜厚600埃之無電解鍍鎳微粒子β所得無電解鑛鎳 微粒子的比重爲1.194。 取所得的鍍鎳微粒子105g，以和實施例1完全相同 的鍍敷條件(銨液比重1.18)使用圖1所示之;導電性微粒子 製造裝置以於其表面進行鍍鎳。 鍍敷微粒子和鑛液的比重差係小至比比較例1更小的 0.014，在微粒子幾乎接觸接觸環前通電就會開始，故幾乎 所有的微粒子會基於雙極現象而使基底層溶解β 實施例22〜26及比較例12、13的結果顯示於表9中 。又，表9中的評價項中，因雙極現象之鍍敷不良的產生 係依下述的基準以評價出。 裝— (請先閲讀背面之注意事項再填，¾本頁) 訂 經濟部中央標準局貝工消资合作社印製 〇：未發現 X:半數以上鍍敷不良 X X :幾乎全部鍍敷不良 粒子材質 粒子徑 無電解鍍 粒子比重 浴μ (βΐη) 顧(埃） 贲施例22 有機樹脂 650.38 5000 1.225 US 0.045 〇 實施例23 有麵脂 650.38 2000 1.204 Π1 0.094 〇 買施例24 玻璃 203.67 600 2.551 1,23 1.321 〇 贾施例25 銅 301.45 _ 8.93 1,23 7J 〇 實施例26 鉛 448.76 — 1134 1.23 io.il 〇 _ 108 CNS ) Μ规格（2丨0X297公处） 459072 A7 ___B7 五、發明说明（卜Ί), TT card, printed by the staff of the Central Standards Bureau of the Ministry of Economic Affairs A7 459072 V. Description of the invention (/, D) The temperature of the plating solution is 50 ° C, the current is 32A, and the current density is 0.4A / dm2. In this condition The two electrodes 闾 were energized for about 80 minutes in total. The peripheral speed of the processing chamber is 226m / min, and the rotation direction is reversed every 11 seconds. As described above, by increasing the film thickness of the electroless plating, the difference between the specific gravity of the particles and the bath becomes 0.04 or more, and all the particles will be completely close to the contact ring to form a uniform plating layer. When the nickel-plated resin fine particles whose outermost shell was the nickel-plated layer were observed under an optical microscope, all the particles did not aggregate and existed as single particles'. Further, it was confirmed from the cross-sectional photograph of the obtained nickel-plated resin fine particles that the particles were uniformly plated on the surface of the particles. The average particle size of 300 nickel-plated resin fine particles was 661.18 / zm, and the thickness of the nickel-plated layer was 5.40 to m. The coefficient of variation of the particle size was 2.7%, and it was proved that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 23 On the same organic resin fine particles as in Example 22, a nickel-plated layer was formed as a conductive base layer by using an electroless plating method to obtain electroless nickel-plated particles having a thickness of 2000 angstroms by electroless plating. The specific gravity of the obtained electroless nickel-plated fine particles was 1.204. 105 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. 1. Except that the composition of the watt bath used was changed to 42 g / L of nickel concentration, 39 g / L of nickel chloride, 150 g / L of nickel sulfate, and 31 g / L of boric acid, plating was performed under exactly the same conditions as in Example 1. The pH of the plating solution is 3.8, and the specific gravity of the plating solution is 1.Π 0 ______1 of ______________________ The scale of the meaning is applicable to the Chinese National Standard (CNS) Λ4 see the grid (210X297 public place). --I [&< (Please read first Note on the back (Item ## This page) Printed by the Central Bureau of the Ministry of Economic Affairs, the Shellfish Consumer Cooperative, 1i 45 90 72 Printed by the Central Standards of the Ministry of Economic Affairs, and printed by the Cooperative Cooperative V. V. Description of Invention (p /) As above, Even if the thickness of the electroless plating is thinner than that of Example 22 and the specific gravity of the particles is made small, the difference between the specific gravity of the fine particles and the bath is reduced to 0.04 or more by reducing the electrolyte concentration of the Watt bath, and all the fine particles will be completely close to the contact ring, and Formation of a uniform ore layer. When the nickel-plated resin fine particles whose outermost shell was the nickel-plated layer were observed under an optical microscope, all particles were not aggregated and existed as single particles. Furthermore, it was confirmed from the cross-sectional photograph of the obtained nickel-plated resin fine particles that the particles were uniformly plated on the surface of the particles. The average particle size of 300 nickel-plated resin fine particles was 660.72 # m, and the thickness of the nickel-plated layer was 5.170 / im. The coefficient of variation of the particle size was 2.7%, and it was proved that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 24 Non-electrolysis was used on glass beads having a specific gravity of 2.54, an average particle size of 203.67 / zm, a standard deviation of 4.10, and a coefficient of variation of 2.0%. A plating method is used to form a shovel nickel layer as a conductive base layer, and electroless nickel-plated particles having a thickness of 600 angstroms are obtained. The specific gravity of the obtained electroless nickel-plated fine particles was 2.551. 75 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. 1. The porous body 12 used was formed by attaching a filter plate made of nylon with a pore diameter of 10 and a thickness of 10 / zm on top of a plate-shaped porous support made of high-density polyethylene having a pore diameter of 100 mm and a thickness of 6 mm. The anode 2a is made of metallic nickel. The plating solution uses a Watt bath. In the composition of the plating solution, the nickel concentration of 45g / L, ______um____ nine scales are applicable to China National Standards (CNS) Λ4 Regulations (210X2W) --------- ^ ------ II- ----- M (Please read the precautions on the back before # -¾ this page) 459072 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (/ ci Nickel chloride 45g / L, Nickel sulfate 300g / L, boric acid 45g / L, the pH of the plating solution is 3.7, the specific gravity of the plating solution is the temperature of the plating solution is 50 ° C, the current is 40A, and the current density is 0.90A / dm2. Under this condition, a total of about Power was applied at 35 minutes. The peripheral speed of the processing chamber was 226 m / tnin, and the rotation direction was reversed every 11 seconds. As mentioned above, by making the difference between the specific gravity of the particles and the bath to be 1.321, all the particles will be completely close to the contact ring, and A uniform plating layer was formed. When the nickel-plated glass beads having the nickel-plated outer shell as the outermost shell were observed under an optical microscope, all particles did not aggregate and existed as single particles. In addition, according to the fracture of the obtained nickel-plated glass beads It can be confirmed that the particles are uniformly plated on the surface of the particles. Also, there are 300 glass beads with ore nickel. The average particle diameter was 210.13 # ιη, and the thickness of the nickel-plated layer was 3.23 μιη. The coefficient of variation of the particle diameter was 3.7%, which proved that the thickness of the nickel-plated layer was quite uniform. Furthermore, no bipolar phenomenon caused the substrate to be found. Example 25 of dissolving particles of nickel plating layer 200 g of copper fine particles having a specific gravity of 8.93, an average particle size of 30.45, a standard deviation of 4.67, and a coefficient of variation of 1.5% were manufactured using conductive fine particles shown in FIG. Nickel plating. The porous body 12 used is a high-density polyethylene plate-shaped porous holder with a pore diameter of 100 and a thickness of 6 mm. It is composed of a nylon-made pore diameter and a thick filter plate. Anode 2a series Metal nickel is used. The plating solution is Watlow. In the composition of the plating solution, nickel chloride is 45g / L, ________ 1 £ 5 _____ This paper size is applicable to Chinese national standards ((:: 1 ^) 44 see the grid (210/297) (Beginning) ---------- hi ------ IT ------ Step on (Please read the precautions on the back and then the wall-¾ page) Central Government Bureau of the Ministry of Economic Affairs Printed by Industrial and Commercial Cooperatives 4 69072: A7 B7 Five 'Invention Description I? M) 300g / L of nickel sulfate, 45g / L of boric acid, pH of plating solution is 3.7' Specific gravity of plating solution It is 1.23. The temperature of the bath is 50 ° C, the current is 40A, and the current density is 0.90A / dm2. Under this condition, a total of 35 minutes of current is passed between the two electrodes. The peripheral speed of the beta processing chamber is 226m / min. The rotation direction is reversed every 11 seconds. As described above, by forming the difference between the specific gravity of the fine particles and the bath to form 7 · 7 ', all the fine particles will be completely close to the contact ring to form a uniform plating layer. When the nickel-plated copper fine particles whose outermost shell was the nickel-plated layer were observed under an optical microscope, all the particles were not aggregated and existed as single particles. Furthermore, it was confirmed that the nickel-plated copper fine particles were uniformly deposited on the surface of the particles based on the cross-sectional photographs of the obtained nickel-plated copper fine particles. The average particle diameter of 300 nickel fine particles of copper plated was 310.38 # m, and the thickness of the nickel-plated layer was 4.46 # m. The coefficient of variation of the particle size was 2.8%, and it was proved that the thickness of the nickel plating layer was quite uniform and no particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 26 200 g of lead fine particles having a specific gravity of 11 to 34, an average particle size of 448.76 μm, a standard deviation of 7.63, and a coefficient of variation of 1.7% were used, and the surface was nickel-plated using the conductive fine particle manufacturing apparatus shown in FIG. 1. The porous body 12 used is a high-density polyethylene plate porous body with a pore size of 100em and a thickness of 6mm, and a nylon pore size 10 # η and a thickness 10 # m are attached. Made up. The anode 2a is made of metallic nickel. The plating solution uses a Watt bath. In the composition of the plating solution, nickel chloride 45g / L, ____—_ L00____ (The Zhang scale is applicable to the Chinese National Standard (CNS) Regulation 8 (210X2y? Public)) '(For the first " read the precautions on the back and fill in This page)-Packing · 459072 Μ ΒΊ V. Description of the invention (~ ί |) Nickel sulfate 300g / L, boric acid 45g / L, pH of the plating solution is 3 · 7, and the specific gravity of the plating solution is 1.23. The temperature of the plating solution is 50 ° C, current is 23.5Α, current density is 1.0A / dm2. Under this condition, a total of about 30 minutes of electricity is applied between the rain electrodes. The peripheral speed of the processing chamber is 226m / min, and the rotation direction is reversed every 11 seconds. 〇As described above, by forming the difference between the specific gravity of the particles and the bath to 10.11, all the particles will be completely close to the contact ring to form a uniform plating layer. When observed under a microscope, all particles did not agglomerate and existed as single particles. In addition, it was confirmed that the nickel-plated lead particles were uniformly plated on the surface of the particles based on the cross-sectional photos of the nickel-plated lead particles. The average particle size of 300 lead particles is 459.26 / zm, and the thickness of the nickel plating layer is 5.25 # m The coefficient of variation of the particle size was 3.1%, which proved that the thickness of the nickel-plated layer was quite uniform. Moreover, no particles were found to dissolve the underlying nickel-plated layer due to the bipolar phenomenon. Comparative Example 12 is identical to Example 23 The electroless nickel-plated fine particles (specific gravity 1.204) were plated under the same plating conditions (mineral fluid specific gravity 1.18) as in Example 1 using the conductive fine particle manufacturing apparatus shown in FIG. 1 to perform nickel plating on the surface. The specific gravity difference between the microparticles and the plating solution is as small as 0.024, and the energization will start before the microparticles contact the contact ring, so there will be many microparticles that dissolve the base layer based on the bipolar phenomenon. Comparative Example 13 _ __107 ____________ Degree Applicable Standard (CNS) Λ4 & 枋 (2 丨 0χ 2 ^ 7) and binding glands (please read the precautions on the back first and then write this page) Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 459072 A7 ___—_____ 137 5 Description of the invention (丨 bp) On the same organic resin fine particles as in Example 22, an electroless plating method was used to form a nickel plating layer as a conductive base layer, and an electroless nickel film thickness of 600 angstroms was obtained. The specific gravity of the electroless nickel fine particles obtained from the nickel-plated fine particles β was 1.194. 105 g of the obtained nickel-plated fine particles were used, and the plating conditions (the specific gravity of the ammonium solution 1.18) were exactly the same as those of Example 1; The device is manufactured to perform nickel plating on the surface. The difference in specific gravity between the plated particles and the mineral liquid is as small as 0.014 smaller than that of Comparative Example 1. Electricity will start before the particles come into contact with the contact ring, so almost all of the particles are based on The bipolar phenomenon dissolves the base layer β. The results of Examples 22 to 26 and Comparative Examples 12 and 13 are shown in Table 9. In addition, among the evaluation items in Table 9, the occurrence of plating defects due to the bipolar phenomenon was evaluated according to the following criteria. Packing-(Please read the precautions on the back before filling, ¾ page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Co-operative Consumer Cooperatives 〇: No X: No more than half of the poor plating XX: Almost all poorly coated particles Particle diameter electroless plating particle specific gravity bath μ (βΐη) Gu (Angstrom) 贲 Example 22 Organic resin 650.38 5000 1.225 US 0.045 〇 Example 23 Face cream 650.38 2000 1.204 Π1 0.094 〇 Buy Example 24 glass 203.67 600 2.551 1, 23 1.321 〇 Jia Shi 25 Copper 301.45 _ 8.93 1,23 7J 〇 Example 26 Lead 448.76 — 1134 1.23 io.il 〇_ 108 CNS) M specifications (2 丨 0X297 public place) 459072 A7 ___B7 V. Description of the invention (bu Ί)

比較例12 有讀脂 650.38 2000 1.204 ΙΛ8 0.024 X 比較例13 有麵脂 650.38 600 1,194 1.18 0.014 XX 實施例27 在苯乙烯和二乙烯苯共聚合所得之比重丨.19、平均粒 徑65〇.8//m、標準偏差9.75jum、變動係數ι5%之有機樹 脂微粒子上’使用無電解鍍敷法形成作爲導電基底層之鍍 鎳層’而得出無電解鑛敷膜厚2000埃之無電解鑛鎳微粒子 。所得無電解鍍鎳微粒子的比重爲1,204。 取所得的無電解鍍鎳微粒子105g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 所使用之多孔體21，係在高密度聚乙烯製之孔徑1〇〇 、厚6mm之扳狀多孔質保持體22的上面貼附尼龍製的 孔徑lOjtzm、厚10"m的過濾板20所構成。 陽極2a係使用金屬鎳。 鍍液係使用瓦特浴。 鍍液的組成中’鎳濃度42g/L、氯化鎳39g/L、硫酸鎳 150g/L、硼酸31g/L，鍍液之pH爲3.8，鍍液比重爲1.11 〇 鍍液的溫度爲50°C，電流爲32A，電流密度0.4A/dm2 ，在此條件下於兩電極間進行總共約80分的通電。 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲256.5rpm ，周速爲225.6m/min 〇以粒子移動時間4秒、通電時間5 秒、減速時間1秒、停止時間1秒爲1循環，重覆正轉和 ___T0Q ___ <度適用中國國家標半·（ CNS )八4规格U丨0X297公H ' ---------^------1Τ------牌 (諳先閲讀背面之注意事項再4)5¾本頁) 經濟部中央標準局只工消费合作社印裝 經濟部中央標隼局員工消費合作社印製 459072 A7 B7 五、發明説明 逆轉。 此時，通電效率（1循環中通電時間的比例)爲45·5% 〇 運轉條件的時序圖顯示於圖27中。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 〇 又，此經鑛鎳的樹脂微粒子300個的平均粒徑爲 661.18ym，鍍鎳層的厚爲5·4〇αιπ。粒徑的變動係數爲 2.7%，而証明出鍍鎳層的厚相當均一。又*未發現出有因 雙極現象而使基底鍍鎳餍溶解之粒子。 實施例28 在和實施例27完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層，而得出無電 解鑛敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子使用圖Η所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 除運轉條件係如下述般外，和實施例27完全相同地 進行鑛敷。 將處理室的旋轉數設定成使離心效果成爲28.6*所使 用之處理室內徑爲280mm，旋轉數爲427.5rpm ’周速爲 376.0m/miri。以粒子移動時間2秒、通電時間3秒、減速 時間I秒、停止時間I秒爲1循環，重覆正轉和逆轉。 此時，通電效率（1循環中通電時間的比例)爲46.2%。 ---------_}A------ΪΤ------妹 {請先閱讀背面之注意事項再济蹲本頁} 本紙張尺度適用中國國家標準（CNS ) 梠（210X 297公兑） A5 9072 A7 ________B7 _ __ 五、發明説明 運轉條件的時序圖顯示於圖28中。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 〇 又’此經鍍鎳的樹脂微粒子300個的平均粒徑爲 66〇.78ytn，鍍鎳層的厚爲5.20ym。粒徑的變動係數爲 2.5%，而証明出鍍鎳層的厚相當均一。又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 實施例29 在和實施例27完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底餍之鍍鎳層，而得出無電 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子105g，使用圖U所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 除運轉條件係如下述般外，和實施例27完全相同地 進行鍍敷。 經濟部中央標隼局負工消费合作，社印製 (請先閱讀背面之注意事項再填耗本頁) β_ 將處理室的旋轉數設定成使離心效果成爲3.2。所使 用之處理室內徑爲280mm，旋轉數爲142.5rpm，周速爲 i25_3m/min。以粒子移動時間8秒、通電時間5秒、減速 時間1秒、停止時間0秒爲1循環，重覆正轉和逆轉。 此時’通電效率（1循環中通電時間的比例)爲35.7%。 運轉條件的時序圖顯示於圖29中。 將如此般所得之最外殼爲鍍鎮層之鍍鎳樹脂微粒子以 ^尺度賴中關家彳牌（CNS ) Λ4;秘（垃)" ' 經濟部中央標準局負工消费合作社印製 A7 137 五、發明説明（〖Gy) 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 659.46#ra，鍍鎳層的厚爲5.04em。粒徑的變動係數爲 2.5% ’而証明出鍍鎳層的厚相當均一。又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 實施例30 取實施例27所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒 子(粒徑661.18以〇1、變動係數2.7°/。、比重1.57)140g，使 用圖Π所示的導電性微粒子製造裝置以於其表面進行鍍共 晶銲錫。 所使用之多孔體2ί，係在高密度聚乙烯製之孔徑100 μπι、厚6mm的板狀多孔質保持體22上面貼附尼龍製的孔 徑10 #m、厚10 的片狀過濾器20所構成。 陽極2a係使用錫：鉛=6 : 4之合金。 鍍液係使用石原藥品株式會社製之酸性浴(537A)。 鍍液的組成中，總金屬濃度21.39g/L，溶中的金屬比 例Sn%=65_3°/。’烷醇磺酸l〇6.4g/L，含添加劑40mL。 鑛液的溫度爲20°C，電流爲40.5A，電流密度 0.5A/dm2,在此條件下於兩電極間總共進行〖05分的通電 〇 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲256.5rpm ’周速爲225.6m/min。以粒子移動時間2秒、通電時間3 -— 112_ :張尺度適用中國國家摞準（CNS ) Λ4坭枯（210X297公对） ---------赛------、1T------線 -) J (請先閲讀背面之注意事項再^,¾本頁) 經濟部中央標準局員工消贽合作社印製 A7 五、發明説明（/7c〇 秒、減速時間化5秒、停止時間2秒爲1循環，重覆正轉 和逆轉。 此時’通電效率（1循環中通電時間的比例)爲40.0%。 運轉條件的時序圖顯示於圖30中。 將如此般所得之最外殼爲共晶銲錫層之鍍共晶銲錫樹 脂微粒子以光學顯微鏡観察時，所有的粒子都未凝集而以 單粒子存在。 又’此經鍍鎳的樹脂微粒子300個的平均粒徑爲 693.06#m，鍍銲錫層的厚爲I5.94ym »粒徑的變動係數 爲3.8%，而証明出鍍鎳層的厚相當均一。所得的銲錫皮膜 以原子吸光法分析的結果，Sn爲61.7%，而証明出其共晶 組成。又，未發現出有因雙極現象而使基底鍍鎳層溶解之 粒子。 實施例31 在本乙嫌和一乙燥苯共聚合所得之比重1.19 '平均粒 徑l〇6.42#m、標準偏差1_7〇μηχ、變動係數1.6%之有機 樹脂微粒子上，使用無電解鑛敷法形成作爲導電基底層之 鑛鎳層，而得出無電解鍍敷膜厚2000埃之無電解鍍鎳微粒 子。所得無電解鍍鎳微粒子的比重爲1.276 〇 取所得的無電解鍍鎳微粒子21.6g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳.。 所使用之多孔體21，係在高密度聚乙烯製之孔徑100 、厚6mm之板狀多孔質保持體22的上面貼附尼龍製的 孔徑l〇#m'厚10//m的過濾板20所構成。 _____LI3____________ 本紙伕尺度適用中國國家標準（CNS ) Λ4規格（210X297公郑） 裝 訂 棘. (請先閲讀背面之注意事項再功'為本頁) 459072Comparative example 12 fat reading 650.38 2000 1.204 ΙΛ8 0.024 X Comparative example 13 facial fat 650.38 600 1,194 1.18 0.014 XX Example 27 Specific gravity obtained by copolymerization of styrene and divinylbenzene 丨 .19, average particle size 650.8 // m, organic resin fine particles with a standard deviation of 9.75jum, and a coefficient of variation of 5% `` are used to form a nickel-plated layer as a conductive base layer by using electroless plating method '' to obtain an electroless ore with a film thickness of 2000 angstroms. Nickel particles. The specific gravity of the obtained electroless nickel-plated fine particles was 1,204. 105 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. 11. The porous body 21 to be used is a high-density polyethylene pore size 100 and a 6-mm-thick plate-shaped porous support 22 with a nylon pore size 10 jtzm and a filter plate 20 having a thickness of 10 " m. . The anode 2a is made of metallic nickel. The plating solution uses a Watt bath. In the composition of the plating solution, the concentration of nickel is 42 g / L, nickel chloride 39 g / L, nickel sulfate 150 g / L, boric acid 31 g / L, the pH of the plating solution is 3.8, and the specific gravity of the plating solution is 1.11. The temperature of the plating solution is 50 ° C, the current is 32A, and the current density is 0.4A / dm2. Under this condition, a total of about 80 minutes of current is applied between the two electrodes. The operating conditions were such that the number of rotations of the processing chamber was set to a centrifugal effect of 10.3. The processing chamber used has a diameter of 280mm, a number of rotations of 256.5rpm, and a peripheral speed of 225.6m / min. ○ With a particle movement time of 4 seconds, a power-on time of 5 seconds, a deceleration time of 1 second, and a stop time of 1 second, 1 cycle is repeated. Forward rotation and ___T0Q ___ < degrees are applicable to China National Standard Half (CNS) 8 4 specifications U 丨 0X297 male H '--------- ^ ------ 1T ------ (Please read the notes on the back first, then 4) 5¾ this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, only printed by the Consumer Cooperative, printed by the Central Consumers ’Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative 459072 A7 B7 5. The description of the invention is reversed. At this time, the power-on efficiency (the ratio of the power-on time in one cycle) was 45 · 5%. The timing chart of the operating conditions is shown in FIG. 27. When the nickel-plated resin fine particles having the nickel-plated outer shell as the outermost layer were observed under an optical microscope, all the particles were not aggregated and existed as single particles. The average particle size of 300 resin fine particles subjected to ore nickel was: 661.18 μm, the thickness of the nickel plating layer is 5.40 μm. The coefficient of variation of the particle size was 2.7%, and it was proved that the thickness of the nickel plating layer was quite uniform. Also, no particles were found to dissolve the nickel plating on the substrate due to the bipolar phenomenon. Example 28 On the same organic resin fine particles as in Example 27, an electroless plating method was used to form a nickel-plated layer as a conductive base layer, and electroless nickel-plated particles having a thickness of 2000 angstroms were obtained. The specific gravity of the obtained electroless nickel-plated fine particles was 1.204. The obtained electroless nickel-plated fine particles were subjected to nickel plating on the surface using a conductive fine particle manufacturing apparatus shown in Fig. Η. Except that the operating conditions were as described below, ore deposit was performed in exactly the same manner as in Example 27. The number of rotations of the processing chamber was set to achieve a centrifugal effect of 28.6 *. The diameter of the processing chamber used was 280 mm and the number of rotations was 427.5 rpm. The peripheral speed was 376.0 m / miri. The particle movement time is 2 seconds, the energization time is 3 seconds, the deceleration time is 1 second, and the stop time is 1 second as one cycle, and the forward rotation and reverse rotation are repeated. At this time, the energization efficiency (the ratio of the energization time in one cycle) was 46.2%. ---------_} A ------ ΪΤ ------ Girl {Please read the precautions on the back before saving this page} This paper size applies to Chinese National Standards (CNS) 210 (210X 297) A5 9072 A7 ________B7 _ __ 5. The timing chart of the operating conditions of the invention is shown in Figure 28. When the nickel-plated resin particles having the nickel-plated outer shell as the outermost layer were observed under an optical microscope, all particles were not aggregated and existed as single particles. Also, the average particle diameter of 300 nickel-plated resin particles It was 66.78 μtn, and the thickness of the nickel plating layer was 5.20 μm. The coefficient of variation of the particle size was 2.5%, and it was confirmed that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 29 On the same organic resin fine particles as in Example 27, a nickel-plated layer was formed as a conductive substrate using an electroless plating method to obtain electroless nickel-plated particles having a thickness of 2000 angstroms by electroless plating. The specific gravity of the obtained electroless nickel-plated fine particles was 1.204. 105 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. U. Except that the operating conditions were as described below, plating was performed in exactly the same manner as in Example 27. Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Co-operation, printed by the company (please read the notes on the back before filling this page) β_ Set the number of rotations of the processing chamber to make the centrifugal effect 3.2. The diameter of the processing chamber used was 280 mm, the number of rotations was 142.5 rpm, and the peripheral speed was i25_3m / min. A cycle of 8 seconds for particle movement time, 5 seconds for energization time, 1 second for deceleration time, and 0 seconds for stop time was used to repeat the forward rotation and reverse rotation. At this time, the 'power-on efficiency (proportion of power-on time in one cycle) was 35.7%. A timing chart of the operating conditions is shown in FIG. 29. The nickel-plated resin particles with the outermost shell as a plating layer were printed on the scale of “CNS” Λ4; Secret (Ru) " '' Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives A7 137 V. Description of the invention (〖Gy) When observed under an optical microscope, all particles are not aggregated and exist as single particles. The average particle size of 300 nickel-plated resin fine particles is 659.46 # ra, and the thickness of the nickel-plated layer is 5.04em. The coefficient of variation of the particle size was 2.5% ', which proved that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 30 140 g of nickel-plated resin fine particles (particle size 661.18 with a coefficient of variation 2.7 ° /., Specific gravity 1.57) of the nickel-plated outer shell obtained in Example 27 were used, and manufactured using the conductive fine particles shown in FIG. The device is provided with eutectic solder plating on its surface. The porous body 2 used is a high-density polyethylene plate-shaped porous holder 22 with a pore size of 100 μm and a thickness of 6 mm. A sheet-shaped filter 20 made of nylon with a pore size of 10 #m and a thickness of 10 is attached. . The anode 2a is made of an alloy of tin: lead = 6: 4. For the plating solution, an acid bath (537A) manufactured by Ishihara Pharmaceutical Co., Ltd. was used. In the composition of the plating solution, the total metal concentration was 21.39 g / L, and the metal ratio in solution was Sn% = 65_3 ° /. 106.4 g / L of 'alkanolsulfonic acid, containing 40 mL of additives. The temperature of the mineral liquid is 20 ° C, the current is 40.5A, and the current density is 0.5A / dm2. Under this condition, a total of 〖05 minutes of power is applied between the two electrodes. The operating conditions are to set the number of rotations of the processing chamber to make centrifugation The effect becomes 10.3. The diameter of the processing chamber used was 280 mm, the number of rotations was 256.5 rpm, and the peripheral speed was 225.6 m / min. With particle movement time of 2 seconds and power-on time of 3 --- 112_: Zhang scale is applicable to China National Standards (CNS) Λ4 坭 (210X297 male pairs) --------- match ------, 1T ------ line-) J (please read the precautions on the back first, ^, this page) A7 printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (/ 7c0 seconds, slow down time 5 seconds and stop time of 2 seconds are 1 cycle, and repeat forward and reverse. At this time, the energization efficiency (the proportion of energization time in 1 cycle) is 40.0%. The timing chart of the operating conditions is shown in Fig. 30. When the obtained eutectic solder resin particles with the outermost shell as the eutectic solder layer were observed with an optical microscope, all particles were not aggregated and existed as single particles. Also, the average particle diameter of 300 nickel-plated resin particles was 693.06 # m, the thickness of the solder plating layer is I5.94ym »The coefficient of variation of the particle size is 3.8%, which proves that the thickness of the nickel plating layer is quite uniform. The obtained solder film was analyzed by atomic absorption method, and Sn was 61.7% And proved its eutectic composition. Also, no dissolution of the underlying nickel plating layer was found due to the bipolar phenomenon Example 31 The electroless ore was used on organic resin microparticles having a specific gravity of 1.19 ′ obtained by copolymerizing ethylbenzene and monoethylbenzene with an average particle size of 10.642 # m, a standard deviation of 1˜70 μηχ, and a coefficient of variation of 1.6%. The method is to form a nickel ore layer as a conductive base layer, and obtain electroless nickel plated particles having a thickness of 2000 angstroms. The specific gravity of the obtained electroless nickel plated particles is 1.276. Take the obtained electroless nickel plated particles 21.6 g. The surface of the conductive fine particle manufacturing apparatus shown in FIG. 11 is used to perform nickel plating on the surface. The porous body 21 used is a high-density polyethylene plate-shaped porous holder 22 having a pore diameter of 100 and a thickness of 6 mm. The upper part is attached with a nylon 10 # m 'thickness 10 // m filter plate 20. _____LI3____________ The size of this paper is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297). (Notes on the back, please work again for this page) 459072

經濟部中央標隼局員工消f合作社印製 五、發明説明（//ί) 陽極2a係使用金屬鎳° 鍍液係使用瓦特浴。 鍍液的組成中，鎳濃度68g/L、氯化線42g/L、硫酸鎳 260g/L、硼酸42g/L ’鍍液之PH爲3.7 ’鍍液比重爲1J8 〇 鍍液的溫度爲50 °C，電流爲33A，電流密度 0.35A/dm2,在此條件下於兩電極間進行總共約分的通 電。 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm ’旋轉數爲256,5rpm *周速爲225.6m/min。以粒子移動時間4秒、通電時間5 秒、減速時間1秒、停止時間1秒爲1循環，重覆正轉和 逆轉。 此時，通電效率（1循環中通電時間的比例)爲45.5%。 運轉條件的時序圖顯示於圖27中。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時’所有的粒子都未凝集而以單粒子存在 〇 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 111.06 ，鍍鎳層的厚爲2.32 # m。粒徑的變動係數爲 2.4%，而証明出鍍鎳層的厚相當均—β又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 實施例32 取實施例Μ所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒 ------~-_ 114 (請先閱讀背面之注意事項再^¾本頁) *1Τ 腺 本紙張尺度適用中國國家標準（CNS ) Λ4規格（2Ι0Χ297^^ > 459072 Α7 137 經濟部中央標隼局員工消f合作社印製 五 '發明説明（//V) 子(粒徑m，06从m、變動係數2.4% '比重2.111)40.0g， 使用圖11所示的導電性微粒子製造裝置以於其表面進行鍍 共晶銲錫。 所使用之多孔體21，係在高密度聚乙烯製之孔徑100 μ m、厚6mm的板狀多孔質保持體22上面貼附尼龍製的孔 徑10//m、厚ΙΟ/zm的片狀過濾器20所構成。· 陽極2a係使用錫：鉛=6 : 4之合金。 鍍液係使用石原藥品株式會社製之酸性浴(537A)。 鍍液的組成中，總金屬濃度21.39g/L，溶中的金屬比 例Sn%=65.3% ’烷醇磺酸106.4g/L，含添加劑40mL。 鍍液的溫度爲20°C，電流爲40.5A，電流密度 0.5A/dm2’在此條件下於兩電極間總共進行105分的通電 〇 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲256.5rpm ’周速爲225.6m/min。以粒子移動時間3秒、通電時間2 秒、減速時間0.5秒、停止時間2秒爲1循環，重覆正轉 和逆轉。 此時，通電效率（1循環中通電時間的比例)爲26.7% 〇 運轉條件的時序圖顯示於圖31中。 將如此般所得之最外殼爲共晶銲錫層之鍍共晶銲錫樹 脂微粒子以光學顯微鏡觀察時，所有的粒子都未凝集而以 單粒子存在。 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 ___ __115 _ ^衣------ir------->t (請先聞誚背面之注意事項再^-為本頁) 本紙张尺度適用中國國家标準（CNS ) Λ4规枱（210X297公疗） 經濟部中央標準局員工消f合作杜印裝 459072 at ______ B7 _ 五、發明説明（/i~) 119.3/zm，鍍銲錫層的厚爲4.12^m。粒徑的變動係數爲 3.6% ’而証明出鍵鎳層的厚相當均一。所得的銲錫皮膜以 原子吸光法分析的結果，Sn爲62.6%，而証明出其共晶組 成。又，未發現出有因雙極現象而使基底鍍鎳層溶解之粒 子。 實施例33 在苯乙烯和二乙烯苯共聚合所得之比重1.19、平均粒 徑19.74# m、標準偏差0.28/zm、變動係數1.4%之有機樹 脂微粒子上，使用無電解鍍敷法形成作爲導電基底層之鍍 鎳層，而得出無電解鍍敷膜厚2000埃之無電解鍍鎳微粒子 。所得無電解鍍鎳微粒子的比重爲1.637 〇 取所得的無電解鍍鎳微粒子4.8g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 所使用之多孔體21，係在高密度聚乙烯製之孔徑1〇〇 /zm '厚6mm之板狀多孔質保持體22的上面貼附尼龍製的 孔徑lOym、厚10/iin的過濾板20所搆成。 陽極2a係使用金屬鎳。 鑛液係使用瓦特浴。 鍍液的組成中，鎳濃度68g/L、氯化鎳42g/L、硫酸鎳 260g/L、硼酸42g/L，鍍液之pH爲3.7，鍍液比重爲1.18 c 鍍液的溫度爲5〇 °C，電流爲33A，電流密度 0.35A/dm2,在此條件下於兩電極間進行總共約50分的通 電。 ____ ___Ππ_____ 本紙張尺度適用中國國家梯準（CRS ) Λ4规枱（2ΪΟΧ 297公筘） " ---------私衣------1T------)m ,\j·. -ii . (請先閲讀背面之注意事項再垆A本頁) 90Τ2 經濟部中央標隼扃負工消资合作社印製 Α7 Β7 五、發明説明（/γ) 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲256_5rpni ，周速爲225.6rn/miti。以粒子移動時間7秒、通電時間3 秒、.減速時間〇,5秒、停止時間2秒爲1循環，重覆正轉 和逆轉。 此時，通電效率（1循環中通電時間的比例)爲24.0%〇 運轉條件的時序圖顯示於圖32中。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 t> 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 22.62#m，鍍鎳層的厚爲1.44#ηι。粒徑的變動係數爲 2.6%，而証明出鍍鎳層的厚相當均一。又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 實施例34 取實施例33所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒 子(粒徑22.62#m、變動係數2.6%、比重3.759)14.0g，使 用圖11所示的導電性微粒子製造裝置以於其表面進行鍍共 晶銲鍚。 所使闬之多孔體21，係在高密度聚乙烯製之孔徑100 、厚6mm的板狀多孔質保持體22上面貼附尼龍製的孔 徑10#m、厚ΙΟ/im的片狀過濾器20所構成。 陽極2a係使用錫：鉛=6 : 4之合金。 鍍液係使用石原藥品株式會社製之酸性浴（537A)。 -- ------— -m—-— --— 本紙掁尺度適用中國國家標準（CNS ) Λ4规格（210X297公垃） ί請先閲讀背面之注意事項再4-·其本頁) .裝 、1Τ 459072 A7 B7__Printed by the staff of the Central Bureau of Standards, Ministry of Economic Affairs, Cooperative Fifth, the description of the invention (//) The anode 2a is made of metal nickel, and the bath is made of watt bath. In the composition of the plating solution, the nickel concentration is 68 g / L, the chloride line is 42 g / L, the nickel sulfate is 260 g / L, and the boric acid is 42 g / L. 'The pH of the plating solution is 3.7' The specific gravity of the plating solution is 1J8 The temperature of the plating solution is 50 ° C, the current is 33A, and the current density is 0.35A / dm2. Under this condition, a total of about a minute of current is applied between the two electrodes. The operating conditions were such that the number of rotations of the processing chamber was set to a centrifugal effect of 10.3. The diameter of the processing chamber used was 280mm, and the number of rotations was 256,5rpm. The peripheral speed was 225.6m / min. A cycle of 4 seconds of particle movement time, 5 seconds of energization time, 1 second of deceleration time, and 1 second of stop time is used to repeat the forward rotation and reverse rotation. At this time, the energization efficiency (the ratio of the energization time in one cycle) was 45.5%. A timing chart of the operating conditions is shown in FIG. 27. When the nickel-plated resin fine particles having the nickel-plated outermost shell as obtained were observed under an optical microscope, all particles were not aggregated and existed as single particles. The average particle diameter of 300 nickel-plated resin fine particles was: 111.06, the thickness of the nickel plating layer is 2.32 # m. The coefficient of variation of the particle size was 2.4%, and it was proved that the thickness of the nickel-plated layer was fairly uniform-β, and no particles were found to dissolve the underlying nickel-plated layer due to the bipolar phenomenon. Example 32 The nickel-plated resin particles with the nickel-plated outermost shell obtained in Example M were taken .------ ~~ 114 (Please read the precautions on the back first ^^ This page) * 1Τ Applicable to Chinese National Standard (CNS) Λ4 specification (2Ι0 × 297 ^^ > 459072 Α7 137 Employees of the Central Bureau of Standards of the Ministry of Economic Affairs printed 5 'invention description (// V) (particle size m, 06 from m, change Coefficient 2.4% 'Specific gravity 2.111) 40.0g, the surface of which is coated with eutectic solder using the conductive fine particle manufacturing apparatus shown in Figure 11. The porous body 21 used is a 100 μm pore made of high-density polyethylene A 6 mm-thick plate-shaped porous holder 22 is attached to a sheet filter 20 made of nylon with a pore size of 10 // m and a thickness of 10 / zm. · The anode 2a is made of tin: lead = 6: 4 alloy The plating bath uses an acid bath (537A) manufactured by Ishihara Pharmaceutical Co., Ltd. In the composition of the plating bath, the total metal concentration is 21.39 g / L, and the proportion of dissolved metal is Sn% = 65.3% 'alkanolsulfonic acid 106.4 g / L , Containing 40mL of additives. The temperature of the bath is 20 ° C, the current is 40.5A, and the current density is 0.5A / dm2 '. The current is applied for 105 minutes. The operating conditions are set to the number of rotations of the processing chamber so that the centrifugal effect is 10.3. The diameter of the processing chamber used is 280mm, the number of rotations is 256.5rpm, and the peripheral speed is 225.6m / min. In terms of particle movement time 3 seconds, power-on time 2 seconds, deceleration time 0.5 seconds, and stop time 2 seconds are 1 cycle, repeating forward and reverse. At this time, the power-on efficiency (the ratio of the power-on time in 1 cycle) is 26.7%. The figure is shown in Fig. 31. When the eutectic solder resin-coated fine particles having the outermost shell as the eutectic solder layer were observed with an optical microscope, all the particles did not aggregate and existed as single particles. In addition, the nickel plating The average particle size of 300 fine resin particles is ___ __115 _ ^ clothing ------ ir ------- > t (please read the precautions on the back of the paper before ^-for this page) Zhang scale is applicable to Chinese National Standards (CNS) Λ4 regulations (210X297 public treatment) Staff cooperation of the Central Standards Bureau of the Ministry of Economic Affairs Du printed 459072 at ______ B7 _ V. Description of the invention (/ i ~) 119.3 / zm, solder plating The thickness is 4.12 ^ m. The coefficient of variation of the particle size is 3.6% ' The thickness of the nickel layer was quite uniform. As a result of analysis of the obtained solder film by atomic absorption method, Sn was 62.6%, which proved its eutectic composition. Moreover, no dissolution of the underlying nickel plating layer due to bipolar phenomenon was found. Example 33 The organic resin fine particles obtained by copolymerizing styrene and divinylbenzene with a specific gravity of 1.19, an average particle size of 19.74 # m, a standard deviation of 0.28 / zm, and a coefficient of variation of 1.4% were formed by using an electroless plating method as particles. The nickel-plated layer of the conductive base layer yielded electroless nickel-plated particles having a thickness of 2000 angstroms. The specific gravity of the obtained electroless nickel-plated microparticles was 1.637. 4.8 g of the obtained electroless nickel-plated microparticles was taken, and the surface was subjected to nickel plating using the conductive microparticle manufacturing apparatus shown in Fig. 11. The porous body 21 used is a high-density polyethylene plate-shaped porous holder 22 having a pore size of 100 / zm and a thickness of 6 mm. A nylon filter pore size of 10 μm and a thickness of 10 / iin are attached. Made up. The anode 2a is made of metallic nickel. The mineral liquid system uses a Watt bath. In the composition of the plating solution, the nickel concentration was 68 g / L, nickel chloride 42 g / L, nickel sulfate 260 g / L, and boric acid 42 g / L. The pH of the plating solution was 3.7, and the specific gravity of the plating solution was 1.18 c. The temperature of the plating solution was 5 °. ° C, the current is 33A, and the current density is 0.35A / dm2. Under this condition, a total of about 50 minutes of current is applied between the two electrodes. ____ ___ Ππ _____ This paper size is applicable to China National Standards of Ladder (CRS) Λ4 gauge (2Ϊ〇Χ 297 公 筘) " --------- Private clothing ------ 1T ------) m , \ j ·. -ii. (Please read the precautions on the back before going to page A) 90Τ2 Printed by the Central Ministry of Economic Affairs and printed by the Consumers and Consumers Cooperatives A7 Β7 V. Description of the invention (/ γ) The operating conditions will be The number of rotations of the processing chamber is set so that the centrifugal effect becomes 10.3. The processing chamber used has a diameter of 280mm, the number of rotations is 256_5rpni, and the peripheral speed is 225.6rn / miti. A cycle of 7 seconds for particle movement time, 3 seconds for energization time, 0.5 seconds for deceleration time, and 2 seconds for stop time were repeated to repeat forward and reverse. At this time, the power-on efficiency (the ratio of the power-on time in one cycle) was 24.0%. The timing chart of the operating conditions is shown in FIG. 32. When the nickel-plated resin fine particles having the nickel-plated outer shell as the outermost layer were observed under an optical microscope, all particles were not aggregated and existed as single particles. T> The average particle size of the nickel-plated resin fine particles was 300. The diameter is 22.62 # m, and the thickness of the nickel plating layer is 1.44 # ηι. The coefficient of variation of the particle size was 2.6%, which proved that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Example 34 14.0 g of nickel-plated resin fine particles (particle size 22.62 # m, coefficient of variation 2.6%, specific gravity 3.759) of the nickel-plated outermost shell obtained in Example 33 were used, and the conductive fine particle manufacturing apparatus shown in FIG. 11 was used. A eutectic plating is performed on the surface. The porous body 21 was made of a high-density polyethylene plate-shaped porous body 22 with a pore diameter of 100 and a thickness of 6 mm. A sheet-shaped filter 20 with a pore diameter of 10 #m and a thickness of 10 / im was attached. Made up. The anode 2a is made of an alloy of tin: lead = 6: 4. As the plating solution, an acid bath (537A) manufactured by Ishihara Pharmaceutical Co., Ltd. was used. -------— -m —-— ---— The paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297 public waste) ί Please read the precautions on the back before 4- · this page) .Packing, 1T 459072 A7 B7__

五、發明説明（/(P 鍍液的組成中，總金屬濃度21.39g/L ’溶中的金屬比 例SiL65.3%，烷醇磺酸’含添加劑。 鍍液的溫度爲20°c ’電流爲40_5A ’電流密度 0.5A/dm2,在此條件下於兩電極間總共進行分的通電 運轉條件係將虡理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm，旋轉數爲25(5.5rpm ，周速爲225.6m/min。以粒子移動時間5秒、通電時間 1.5秒、減速時間0.5秒、停止時間2秒爲1循環’重覆正 轉和逆轉。 此時，通電效率（1循環中通電時間的比例)爲16·7%。 運轉條件的時序圖顯示於圖33中。 .將如此般所得之最外殻爲共晶銲錫層之鍍共晶銲錫樹 脂微粒子以光學顯微鏡觀察時，所有的粒子都未凝集而以 單粒子存在^ 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 26.59#m，銨銲錫層的厚爲1.99粒徑的變動係數爲 3.8%，而証明出鍍鎳層的厚相當均一。所得的銲錫皮膜以 原子吸光法分析的結果f Sn爲59_7% ’而証明出其共晶組 成。又，未發現出有因雙極現象而使基底鍍鎳層溶解之粒 子。 比較例14 在和實施例27完全相同的有機樹脂微III子上’使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層’而得出無電 ___ _LIS_„- ,張尺度適用中國國家摞淨-(CNS ) Λ4規格（210父297公及） ---------,)Α------ΐτ------舞 (#先閱讀背面之注意事項再济 寫本頁) 經濟部中央標牮局员工消费合作社印製 A7 459072 五、發明説明（ 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍_ 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子l〇5g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳β 除運轉條件採下述般以外，和實施例27完全地進行 鍍敷。 將處理室的旋轉數設定成使離心效果成爲47.4。所使 用之處理室內徑爲280mm，旋轉數爲550.Orpm，周速爲 483.8m/min。以粒子移動時間1秒、通電時間3秒、減速 時間i秒、停止時間1秒爲1循環，重覆正轉和逆轉。 此時，通電效率（1循環中通電時間的比例)爲45.5% 6 運轉條件的時序圖顯示於圖34中。 .若離心效果形成40.0以上，雖微粒子要靠近接觸環所 需的時間變得很短，但由於基於離心力的作用之受到朝外 周方向的力之鍍液會在處理室內形成硏缽狀的旋渦，而使 配置於處理室中央的陽極露出，故電流無法流通，無法進 行鍍敷β 比較例15 在和實施例27完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層，而得出無電 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子105g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 ___—----------119 ____ 〈張尺度適用中國國家標隼（CNS ) ( 210'χ2π公於〉 (請先間讀背面之注意事項再填爲本頁) --° 餺 經濟部中央標準局負工消费合作社印掣 4iD3〇72 A7 B7 ____ 五、發明説明（/^) 除運轉條件採下述般以外，和實施例27完全地進行 鍍敷。 將處理室的旋轉數設定成使離心效果成爲1_6»所使 用之處理室內徑爲280mm，旋轉數爲99.8rpm，周速爲 87,7m/min。以粒子移動時間10秒、通電時間5秒、減速 時間1秒、停止時間1秒爲1循環，重覆正轉和逆轉。 此時，通電效率（1循環中通電時間的比例)爲29.4%。 運轉條件的時序圖顯示於圖35中。 若離心效果形成2.0以下，即使粒子移動時間爲10秒 微粒子仍無法靠近接觸環，會產生雙極現象，幾乎所有粒 子的無電解鍍敷層將溶解，無法進行鍍敷。 出較例16 .在和實施例27完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層，而得出無電 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子l〇5g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 除運轉條件採下述般以外，和實施例27完全地進行 鍍敷。 將處理室的旋轉數設定成使離心效果成爲28.6。所使 用之處理室內徑爲280mm，旋轉數爲427,5rPm，周速爲 376.Om/min。以粒子移動時間12秒、通電時間3秒、減速 時間1秒、停止時間1秒爲1循環，重覆正轉和逆轉。 __12£L________ 3長尺度適用中國國家摞準（CNS ) W規招（210X297公筇） ---------批衣------tT------0 . . _ (請先閲讀背面之注意事項再谈爲本頁) 經濟部中央樯卑局员工消费合作、杜印狀 經濟部中央標準局員工消費合作社印製 459072 A7 ____ B7 五、發明説明（d) 此時’通電效率（1循環中通電時間的比例)爲π.6°/。β 運轉條件的時序圖顯示於圖36中。 若離心效果形成28.6以上，即使位於實施例2之可鑛 敷的範圍內，但因粒子移動時間過長*由於基於離心力的 作用之受到朝外周方向的力之鍍液會在處理室內形成硏缽 狀的旋渦’處理室中央部的液面會降低而會使陽極露出， 故電流無法流通，無法進行鍍敷。 比較例17 在和實施例27完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層，而得出無電 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204 « .取所每的無電解鑛鎳微粒子,使用圖11所示的 導電性微粒子製造裝置以於其表面進行鑛線。 除運轉條件採下述般以外，和實施例27完全地進行 鍍敷。 將處理室的旋轉數設定成使離心效果成爲28.6。所使 用之處理室內徑爲280mm，旋轉數爲427.5pm，周速爲 376.0m/min 〇以粒子移動時間〇秒、通電時間5秒、減速 時間1秒、停止時間1秒爲1循環，重覆正轉和逆轉。 此時，通電效率（1循環中通電時間的比例)爲71.4。/〃 運轉條件的時序圖顯示於圖37中β 由於在處理室旋轉之同時開始通電，故在微粒子朝接 觸環之移動中電流就會流通。因此，將產生雙極現象，而 —--7-1 -------一 121 L張尺度適用中國國t標毕 ( CNS ) /\4规犯（2 ] 0 X 297公犮一^~ ---------^------ir------^ (請先閱請背面之注意亊項再^¾本頁) 459072 經濟部中央樣準局貝工消费合作社印製 A7 B7 五、發明説明（/(1) 使大部分的微粒子產生無電解鍍敷層的溶解’而無法進行 電鍍β 將所得的微粒子以光學顯微鏡觀察時’約90%的微粒 子會因雙極現象而使無電解敷層溶解，而維持樹脂微粒子 的狀態。 比較例18 在和實施例27完全相同的有機樹脂微粒子上，使用 無電解鍍敷法形成作爲導電基底層之鍍鎳層，而得出無電 解鍍敷膜厚2000埃之無電解鍍鎳微粒子。所得無電解鍍鎳 微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子l〇5g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 .除運轉條件採下述般以外，和實施例27完全地進行 鍍敷。 將處理室的旋轉數設定成使離心效果成爲10.3。所使 用之處理室內徑爲280mm，旋轉數爲256.5i.pm，周速爲 225.6m/min 〇以粒子移動時間4秒、通電時間5秒、減速 時間1秒、停止時間12秒爲1循環，重覆正轉和逆轉》 此時，通(率(1循環中通電時間的比例)爲22.7%。 蓮轉條件的時序圖顯示於圖38中。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子以 先學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存在 又’此經鍍鎳的樹脂微粒子300個的平均粒徑爲 ---------^裝------ΐτ------.¼ (#先閱讀背面之注意事項再蟥.¾本頁)V. Description of the invention (/ (P In the composition of the plating solution, the total metal concentration is 21.39g / L, the proportion of dissolved metal in SiL is 65.3%, and the alkanol sulfonic acid contains additives. The temperature of the plating solution is 20 ° c. It is 40_5A 'current density 0.5A / dm2. Under this condition, the operating conditions for energization between the two electrodes are set to the number of rotations of the treatment chamber so that the centrifugal effect becomes 10.3. The diameter of the treatment chamber used is 280mm, The number of rotations is 25 (5.5 rpm, and the peripheral speed is 225.6 m / min. With the particle moving time of 5 seconds, energization time of 1.5 seconds, deceleration time of 0.5 seconds, and stop time of 2 seconds for 1 cycle, repeat the forward and reverse rotations. At this time The energization efficiency (the proportion of energization time in one cycle) is 16.7%. The timing chart of the operating conditions is shown in Fig. 33. The eutectic solder resin particles coated with the eutectic solder layer as the outermost shell in this way are obtained. When observed with an optical microscope, all particles were not aggregated and existed as single particles. Also, the average particle diameter of 300 nickel-plated resin particles was 26.59 # m, and the thickness of the ammonium solder layer was 1.99. It is 3.8%, and it proves that the thickness of the nickel plating layer is quite uniform. The eutectic composition of the solder film was analyzed by atomic absorption method as a result of f Sn being 59_7%. Moreover, no particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. Comparative Example 14 Example 27: The electroless plating method was used to form a nickel-plated layer as a conductive base layer on the same organic resin micro-III device, and the electricity was obtained ___ _LIS _ „-, and the scale is applicable to the Chinese national standard-(CNS) Λ4 Specifications (210 fathers and 297 fathers) ---------,) Α ------ ΐτ ------ 舞 (#Read the precautions on the back before writing this page) Ministry of Economy Printed by the Consumer Standards Cooperative of the Central Bureau of Standards, A7 459072 V. Description of the Invention (The electroless nickel-plated microparticles with a plating thickness of 2000 angstroms are obtained. The specific gravity of the electroless-plated microparticles obtained is 1.204. Take the obtained electroless nickel-plated microparticles 〇5g, nickel plating was performed on the surface using the conductive fine particle manufacturing apparatus shown in FIG. 11 except that the operating conditions were as follows, and the plating was completely performed as in Example 27. The number of rotations of the processing chamber was set so that The centrifugal effect becomes 47.4. The diameter of the processing chamber used is 280mm and the number of rotations is 55 0.Orpm, peripheral speed is 483.8m / min. With the particle movement time of 1 second, the energization time of 3 seconds, the deceleration time of i seconds, and the stop time of 1 second as a cycle, the forward and reverse rotations are repeated. At this time, the energization efficiency ( The proportion of the energization time in 1 cycle) is 45.5%. 6 The timing chart of the operating conditions is shown in Figure 34. If the centrifugal effect forms 40.0 or more, although the time required for the particles to get close to the contact ring becomes short, it is based on centrifugal force. The plating solution, which is subjected to the force in the outer circumferential direction, forms a bowl-shaped vortex in the processing chamber, and exposes the anode disposed in the center of the processing chamber. Therefore, the current cannot flow, and plating cannot be performed. In Example 27, an electroless plating method was used to form a nickel-plated layer as a conductive base layer on the same organic resin fine particles, and electroless nickel-plated particles having a thickness of 2000 angstroms were obtained. The specific gravity of the obtained electroless nickel-plated fine particles was 1.204. 105 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. 11. ___—---------- 119 ____ <Zhang's scale is applicable to Chinese National Standards (CNS) (210'χ2π public>) (Please read the precautions on the back before filling in this page)-°印 Industrial and consumer cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 4iD3〇72 A7 B7 ____ V. Description of the invention (/ ^) Except for the following operating conditions, plating was performed completely as in Example 27. Rotate the processing chamber The number is set to make the centrifugal effect 1_6. The diameter of the processing chamber used is 280mm, the number of rotations is 99.8rpm, and the peripheral speed is 87,7m / min. With particle movement time of 10 seconds, energization time of 5 seconds, deceleration time of 1 second, The stop time of 1 second is 1 cycle, repeating the forward and reverse rotations. At this time, the power-on efficiency (the ratio of the power-on time in 1 cycle) is 29.4%. The timing chart of the operating conditions is shown in Figure 35. If the centrifugal effect is less than 2.0 Even if the particle travel time is 10 seconds, the particles cannot reach the contact ring, and a bipolar phenomenon will occur. The electroless plating layer of almost all particles will dissolve and cannot be plated. Comparative Example 16 is exactly the same as Example 27. Of organic resin particles using electroless plating An electroless nickel-plated fine particle having an electroless plating film thickness of 2000 angstroms was obtained as a conductive nickel-plated layer. The specific gravity of the obtained electroless nickel-plated fine particles was 1.204. 105 g of the obtained electroless nickel-plated fine particles were taken The surface of the conductive fine particle manufacturing apparatus shown in Fig. 11 was used to perform nickel plating on the surface. Except that the operating conditions were as follows, plating was performed completely as in Example 27. The number of rotations of the processing chamber was set to achieve a centrifugal effect. 28.6. The diameter of the processing chamber used is 280mm, the number of rotations is 427,5rPm, and the peripheral speed is 376.Om/min. The particle movement time is 12 seconds, the energization time is 3 seconds, the deceleration time is 1 second, and the stop time is 1 second. 1 cycle, repeating forward and reverse. __12 £ L ________ 3 Long scales are applicable to China National Standards (CNS) W Regulations (210X297) ---- --------- Approve clothes ------ tT ------ 0.. _ (Please read the notes on the back before discussing this page) Employee Cooperative Cooperation of the Central Ministry of Economic Affairs and the Ministry of Economic Affairs, Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 459072 A7 ____ B7 V. Description of the invention (d) At this time, 'power-on efficiency (when power-on in 1 cycle) The ratio is π.6 ° /. The timing chart of β operating conditions is shown in Figure 36. If the centrifugal effect is 28.6 or more, even if it is within the ore depositable range of Example 2, but the particle movement time is too long * The plating solution subjected to the force in the outer circumferential direction due to the action of centrifugal force will form a bowl-like vortex in the processing chamber. The liquid level in the center of the processing chamber will be lowered and the anode will be exposed. Therefore, current cannot flow and plating cannot be performed. . Comparative Example 17 On the same organic resin fine particles as in Example 27, a nickel-plated layer was formed as a conductive base layer using an electroless plating method, and electroless nickel-plated fine particles having an electroless plating film thickness of 2000 angstroms were obtained. The specific gravity of the obtained electroless nickel-plated fine particles was 1.204 «. Each of the electroless nickel fine particles was taken, and the conductive fine particle manufacturing apparatus shown in Fig. 11 was used to perform ore line on the surface. Except for the following operating conditions, plating was performed completely as in Example 27. The number of rotations of the processing chamber was set so that the centrifugal effect was 28.6. The processing chamber used is 280mm in diameter, the number of rotations is 427.5pm, and the peripheral speed is 376.0m / min. 〇The particle movement time is 0 seconds, the power-on time is 5 seconds, the deceleration time is 1 second, and the stop time is 1 second. Forward and reverse. At this time, the energization efficiency (the ratio of the energization time in one cycle) was 71.4. / 〃 The timing chart of the operating conditions is shown in Figure 37. Since β starts to be energized while the processing chamber is rotating, current flows when the particles move toward the contact ring. Therefore, there will be a bipolar phenomenon, and ---- 7-1 ------- a 121 L scale is applicable to China's national standard (CNS) / \ 4 regulations (2) 0 X 297 public ^ ~ --------- ^ ------ ir ------ ^ (Please read the note on the back first, then ^ ¾ this page) 459072 Central Bureau of Standards, Ministry of Economic Affairs Printed by the Industrial and Commercial Cooperatives A7 B7 V. Description of the invention (/ (1) Electrolysis plating layer dissolves most of the fine particles and cannot be electroplated β When the obtained fine particles are observed with an optical microscope, about 90% of the fine particles The electroless coating is dissolved due to the bipolar phenomenon, and the state of the resin fine particles is maintained. Comparative Example 18 An electroless plating method was used to form nickel plating as a conductive base layer on the same organic resin fine particles as in Example 27. Layer to obtain electroless nickel-plated particles having an electroless plating film thickness of 2000 angstroms. The specific gravity of the obtained electroless nickel-plated particles is 1.204. 105 g of the obtained electroless-nickel plated particles were taken and the conductivity shown in FIG. 11 was used. The surface of the microparticle manufacturing apparatus was nickel-plated. Except that the operating conditions were as follows, the plating was completely performed in Example 27. Set the number of rotations of the processing chamber to make the centrifugal effect to 10.3. The diameter of the processing chamber used is 280mm, the number of rotations is 256.5i.pm, the peripheral speed is 225.6m / min. ○ The particle movement time is 4 seconds, and the power-on time is 5 Second, deceleration time 1 second, stop time 12 seconds is 1 cycle, and repeat forward and reverse. At this time, the pass rate (the proportion of power-on time in 1 cycle) is 22.7%. The timing chart of the lotus rotation condition is shown in the figure 38. When the nickel-plated resin particles with the nickel-plated outer shell as the outermost shell were observed under a prior microscope, all particles were not aggregated and existed as single particles. There were 300 nickel-plated resin particles. The average particle size is --------- ^ pack ------ ΐτ ------. ¼ (#Read the precautions on the back first, then 蟥. ¾ page)

本紙張尺朗财@财#準（CNS 122 )八4現棉（210\297公#) 45 9072 經濟部中央標準局負工消费合作社印裝 A7 五、發明説明（//) 660·33μπι ’鍍銲錫層的厚爲4.98jtdm。粒徑的變動係數爲 2.8% ’而証明出鍍鎳層的厚相當均—β所得的銲錫皮膜以 原子吸光法分析的結果，Sn爲62.6%，而証明出其共晶組 成β又’未發現出有因雙極現象而使基底鍍鎳層溶解之粒 子。 如此般所得的微粒子係和實施例1同等級，但因停止 時間過長’故效率不佳，而使總鍍敷時間形成實施例！的 約2倍。 實施例27〜34及比較例14〜18的結果顯示於表10中 〇 表10This paper ruler Long Cai @ 财 # 准 （CNS 122） 八 4 Current cotton （210 \ 297 公 #） 45 9072 Printed by A7 Consumer Work Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (//) 660 · 33μπι '' The thickness of the plated solder layer is 4.98jtdm. The coefficient of variation of the particle size is 2.8% ', which proves that the thickness of the nickel-plated layer is quite uniform-the result of the atomic absorption method analysis of the solder film obtained by β, Sn was 62.6%, and it was proved that its eutectic composition β was not found There are particles that dissolve the underlying nickel plating layer due to the bipolar phenomenon. The fine particles obtained in this way are of the same grade as in Example 1, but because the stop time is too long, the efficiency is not good, and the total plating time becomes an example! About 2 times. The results of Examples 27 to 34 and Comparative Examples 14 to 18 are shown in Table 10. Table 10

粒徑 βία 粒子 比重 離心 鮮 周速 m/min 旋轉 數 rpm 粒子移 動時間 ㈣ 通電 時間 m 減速 時間 m 停止 時間 m 通電 效率 ⑽ 實施例27 650 1.20 10.3 225.6 256.5 4 5 1 \ 45.5 ----- 〇 實施例28 650 1.20 28.6 376 427.5 2 3 0,5 1 46.2 〇 萁施例29 650 1.20 3.2 125.3 142.5 8 5 1 0 35.7 〇 寊施例30 650 1.57 10.3 225.6 256,5 2 3 0.5 2 40.0 〇 寊施例31 106 1.28 10.3 225.6 256.5 4 5 1 1 45.5 --—-- 〇 實施例32 106 2.11 10.3 225-6 2565 3 2 0.5 2 26.7 〇 實施例33 20 1.64 10.3 225.6 256,5 7 3 0.5 2 24.0 〇 實施例34 20 3.76 10.3 225.6 256.5 5 1.5 0.5 2 ----- 16.7 〇 比較例14 650 1.20 47.4 483-8 550 1 3 1 1 50.0 ~~~*—--- X _ m (CNS ) ( 210X 297^^ ) ---------^裝------IT------Μ c請先閱讀背面之注意亊項再續离本頁} 五 經濟部中央標準局貝工消費合作社印製 459073 A7 _B7 、發明説明（/4) 比較例15 650 1.20 1.6 877 99.8 10 5 1 1 29.4 X 比較例16 650 1.20 28.6 376 427.5 12 3 1 1 17.6 △ 比酬Π 650 1.20 28.6 376 427.5 0 5 1 1 7L4 X 比較例18 650 1.20 10.3 225-6 256.5 4 5 I 12 22.7 Λ 實施例35 在苯乙烯和二乙烯苯共聚合所得之比重1.19、平均粒 徑650.8//m、標準偏差9.75#m、變動係數ι·5%之有機樹 脂微粒子上’使用無電解鍍敷法形成作爲導電基底層之鍍 鎳層’而得出無電解鑛敷膜厚2000埃之無電解鍍鎳微粒子 β所得無電解鑛鎳微粒子的比重爲1.204。 取所得的無電解鍍鎳微粒子l〇5g，使用圖11所示的 導電性微粒子製造裝置以於其表面進行鍍鎳。 所使用之多孔體21，係在高密度聚乙烯製之孔徑100 '厚6mm之板狀多孔質保持體22的上面貼附尼龍製的 孔徑l〇#m、厚10# m的過濾板20所構成。 陽極2a係使用金屬鎳。 鍍液係使用瓦特浴》 鍍液的組成中，鎳濃度42g/L、氯化鎳39g/L、硫酸鎳 150g/L、硼酸31g/L，鍍液之pH爲3.8，鍍液比重爲1.11 〇 鍍液的溫度爲50°C，電流爲32A，電流密度0.4A/dm2 ，在此條件下於兩電極間進行總共約8〇分的通電。 運轉條件係將處理室的旋轉數設定成使離心效果成爲 10.3。所使用之處理室內徑爲280mm ’旋轉數爲256.5rpm ____---- L度適用中國國家標準（CNS ) Λ4蚬抬（2I0X29W&gt;^ ) (姊先閱讀背面之注意事項再本頁)Particle size βία Particle specific gravity Centrifugal fresh peripheral speed m / min Rotation number rpm Particle moving time ㈣ Power-on time m Deceleration time m Stop time m Power-on efficiency ⑽ Example 27 650 1.20 10.3 225.6 256.5 4 5 1 \ 45.5 ----- 〇 Example 28 650 1.20 28.6 376 427.5 2 3 0,5 1 46.2 〇 萁 Example 29 650 1.20 3.2 125.3 142.5 8 5 1 0 35.7 〇 Example 30 650 1.57 10.3 225.6 256, 5 2 3 0.5 2 40.0 〇 寊Example 31 106 1.28 10.3 225.6 256.5 4 5 1 1 45.5 --- 〇 Example 32 106 2.11 10.3 225-6 2565 3 2 0.5 2 26.7 〇 Example 33 20 1.64 10.3 225.6 256, 5 7 3 0.5 2 24.0 〇 Example 34 20 3.76 10.3 225.6 256.5 5 1.5 0.5 2 ----- 16.7 〇 Comparative Example 14 650 1.20 47.4 483-8 550 1 3 1 1 50.0 ~~~ * ------ X _ m (CNS) (210X 297 ^^) --------- ^ Installation ------ IT ------ Μ c Please read the note on the back before leaving this page} 5 Central Bureau of Standards, Ministry of Economic Affairs Printed by Pui Gong Consumer Cooperative Co., Ltd. 459073 A7 _B7, Description of Invention (/ 4) Comparative Example 15 650 1.20 1.6 877 99.8 10 5 1 1 29.4 X Comparative Example 16 650 1.20 28.6 376 427.5 12 3 1 1 17.6 △ Specific pay Π 650 1.20 28.6 376 427.5 0 5 1 1 7L4 X Comparative Example 18 650 1.20 10.3 225-6 256.5 4 5 I 12 22.7 Λ Example 35 Specific gravity obtained by copolymerization of styrene and divinylbenzene 1.19, average particle size 650.8 // m, standard deviation 9.75 # m, coefficient of variation ι · 5% of organic resin microparticles 'formed using a non-electrolytic plating method to form a nickel-plated layer as a conductive base layer' to obtain an electroless mineral coating film thickness of 2000 angstroms The specific gravity of the electroless nickel fine particles obtained by the electroless nickel fine particles β was 1.204. 105 g of the obtained electroless nickel-plated fine particles were taken, and the surface was subjected to nickel plating using the conductive fine particle manufacturing apparatus shown in Fig. 11. The porous body 21 used was a high-density polyethylene plate-shaped porous holding body 22 having a pore diameter of 100 ′ and a thickness of 6mm. 20 nylon filter plates with a pore size of 10 # m and a thickness of 10 # m were attached. Make up. The anode 2a is made of metallic nickel. The plating solution uses a Watt bath. In the composition of the plating solution, the nickel concentration is 42 g / L, nickel chloride 39 g / L, nickel sulfate 150 g / L, and boric acid 31 g / L. The pH of the plating solution is 3.8, and the specific gravity of the plating solution is 1.11. The temperature of the plating solution is 50 ° C, the current is 32A, and the current density is 0.4A / dm2. Under this condition, a total of about 80 minutes of current is applied between the two electrodes. The operating conditions were such that the number of rotations of the processing chamber was set to a centrifugal effect of 10.3. The processing chamber diameter used is 280mm ’The number of rotations is 256.5rpm ____---- L degree is applicable to the Chinese National Standard (CNS) Λ4 蚬 lift (2I0X29W &gt; ^) (Please read the precautions on the back before this page)

、1T 經濟部中央標奉局負工消费合作社印製 4 5 9 0 7 2 Α7 137 五、發明説明（/?&gt;) ，周速爲 225.6m/min « 鍍敷初期階段之運轉模式，係以粒子移動時間4秒' 通電時間5秒、減速時間1秒、停止時間1秒爲1循環’ 重覆正轉和逆轉-鍍敷開始後，約39分後’採取微粒子的 樣本而以光學顯微鏡觀察的結果，所有的粒子都未凝集而 以單粒子存在。又，經鍍鎳的樹脂微粒子100個的平均粒 徑爲652.82μχη，鍍鎳層的厚爲1.02#m，比重爲1.276。 基於此，將粒子移動時間縮短，將運轉模式變更成以粒子 移動時間2秒、通電時間5秒、減速時間1秒、停止時間 1秒爲1循環，重覆正轉和逆轉以繼續進行鍍敷。總鍍敷 時間約168分。 將如此般所得之最外殻爲鍍鎳層之鍍鎳樹脂微粒子 以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存 在。 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 00h00&quot;m，鑛錬層的厚爲。粒徑的變動係數爲 2.5%，而証明出鍍鎳層的厚相當均一。又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 由上述鑛膜厚和總鍍敷時間可知，每Ιμιη被膜之鍍 敷時間爲約32.7分。 實施例36 使用和實施例35完全相同的無電解鍍鎳微粒子，除 運轉條件形成如下述般外，係進行和實施例35完全相同的 鍍敷。 _________L25__________ 尺度適用ΐ國國準（CNS ) ( 210Χ297:&gt;於) ---------^------訂------膝 (_先閱讀背面之注意事項再带爲本頁) 經濟部中央橾準局貝工消费合作社印製 五、發明説明（/4) 鍍敷初期階段之運轉模式，係以粒子移動時間4秒、 通電時間5秒、減速時間丨秒、停止時間1秒爲1循環’ 重覆正轉和逆轉。鍍敷開始後，約37分後’採取微粒子的 樣本而以光學顯微鏡観察的結果，所有的粒子都未凝集而 以單粒子存在。又，經鍍鎳的樹脂微粒子1⑻個的平均粒 徑爲652·74#ιη，鍍鎳層的厚爲〇,98ym ’比重爲1.273。 基於此’將粒子移動時間縮短，將運轉模式變更成以粒子 移動時間〇_5秒、通電時間5秒、減速時間1秒、停止時 間1秒爲1循環，重覆正轉和逆轉以繼續進行鍍敷β總鍍 敷時間約143分。 將如此般所得之最外殼爲鍍鎳層之鑪鎳樹脂微粒子 以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存 在。. 又，此經鑛鎳的樹脂微粒子300個的平均粒徑爲 660.88 # m ’鑛鎳餍的厚爲5.05〆m ^粒徑的變動係數爲 2.5%，而証明出鍍鎳層的厚相當均一。又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 由上述鍍膜厚和總鍍敷時間可知，每l //m被膜之镀 敷時間爲約28.3分。 實施例37 使用和實施例；35完全相同的無電解鍍鎳微粒子’除 運轉條件形成如下述般外，係進行和實施例35完全相同的 鍍敫。 鍍敷初期階段之運轉模式，係以粒子移動時間4秒， 本紙張尺度適用中國國表標华.（) Λ视柏（2⑴χ 297,Α处） (請先閲讀背面之注意亊項再圹寫本頁) 、τ 459072 經濟部中央標隼局員工消費合作社印製 A7 B7 五、發明説明（/*&gt;1) 通電時間5秒 '減速時間1秒、停止時間1秒爲I循環， 重覆正轉和逆轉β鍍敷開始後，約23分後，採取微粒子的 樣本而以光學顯微鏡觀察的結果’所有的粒子都未凝集而 以單粒子存在。又，經鍍鎳的樹脂微粒子1〇〇個的平均粒 徑爲650.00 yra，鍍鎳層的厚爲〇_61#m，比重爲1.247。 基於此，將粒子移動時閭縮短’將運轉模式變更成以粒子 移動時間0.5秒、通電時間5秒、減速時間1秒、停止時 間1秒爲1循環，重覆正轉和逆轉以繼續進行鍍敷。總鍍 敷時間約140分。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子 以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存 在。 .又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 660.98/im，鍍鎳層的厚爲。粒徑的變動係數爲 2.6%，而証明出鍍鎳層的厚相當均一。又，未發現出有因 雙極現象而使基底鍍鎳層溶解之粒子。 由上述鍍膜厚和總鍍敷時間可知，每被膜之鑛 敷時間爲約27.5分。 比較例19 使用粕實施例35完全相同的無電解鍍鎳微粒子，除 運轉條件形成如下述般外，係進行和實施例35完全相同的 鍍敷。 運轉模式從鍍敷開始到終了都是以粒子移動時間12 秒、通電時間5秒、減速時間1秒、停止時間1秒爲1循 ___—_ —_____ \ΊΊ__. 本紙張尺度適用中國國家榡率（CNS ) Λ4规辂（210_/ 297公#_1 ~~~ (婧先閱讀背面之注意事項再贫寫本頁) 裝·1. 1T printed by the Central Standard Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 4 5 9 0 7 2 Α7 137 V. Description of the invention (/? &Gt;), with a peripheral speed of 225.6m / min With a particle movement time of 4 seconds, 5 cycles of energization time, 1 second of deceleration time, and 1 second of stop time, 1 cycle was repeated. After the forward and reverse rotations were started, after about 39 minutes, a sample of fine particles was taken and an optical microscope was used. As a result of observation, all particles were not aggregated and existed as single particles. The average particle diameter of 100 nickel-plated resin fine particles was 652.82 µxη, the thickness of the nickel-plated layer was 1.02 # m, and the specific gravity was 1.276. Based on this, the particle movement time is shortened, and the operation mode is changed to a cycle of 2 seconds for particle movement time, 5 seconds for energization time, 1 second for deceleration time, and 1 second for stop time, repeating forward and reverse to continue plating . The total plating time is about 168 minutes. When the nickel-plated resin fine particles whose outermost shell was a nickel-plated layer were observed under an optical microscope, all the particles did not aggregate and existed as single particles. The average particle size of 300 nickel-plated resin fine particles was 00h00 &quot; m, and the thickness of the ore layer was. The coefficient of variation of the particle size was 2.5%, and it was confirmed that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. It can be known from the above-mentioned ore film thickness and the total plating time that the plating time per 1 μm film is about 32.7 minutes. Example 36 The same electroless nickel-plated microparticles as those used in Example 35 were used, and plating was performed in exactly the same manner as in Example 35 except that the operating conditions were as follows. _________L25__________ Applicable standards: National Standards (CNS) (210 × 297: &gt; Yu) --------- ^ ------ Order ------ Knee (_Read the precautions on the back first (This page is on this page) Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, V. Invention Description (/ 4) The operation mode of the initial stage of plating is based on 4 seconds of particle movement time, 5 seconds of energization time, and deceleration time 丨 seconds 1, stop time 1 second for 1 cycle 'Repeat forward and reverse. After the start of plating, about 37 minutes later, a sample of fine particles was taken and examined with an optical microscope. As a result, all particles were not aggregated and existed as single particles. The average particle diameter of each of the nickel-plated resin fine particles was 652 · 74 #, and the thickness of the nickel-plated layer was 0,98ym 'and the specific gravity was 1.273. Based on this, the particle movement time is shortened, and the operation mode is changed to a cycle of particle movement time of 0-5 seconds, energization time of 5 seconds, deceleration time of 1 second, and stop time of 1 second. Repeat forward and reverse to continue The total β plating time was about 143 minutes. When the furnace nickel resin fine particles having the nickel-plated outer shell as the outer shell were observed under an optical microscope, all the particles did not aggregate and existed as single particles. In addition, the average particle size of the 300 particles of resin particles of ore nickel was 660.88 # m 'The thickness of the ore nickel was 5.05 〆m ^ The coefficient of variation of the particle size was 2.5%, and it was proved that the thickness of the nickel plating layer was quite uniform. . No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. From the above coating thickness and total plating time, it can be known that the plating time per l // m film is about 28.3 minutes. Example 37 The same electroless nickel-plated particles as in Example 35 were used. Except that the operating conditions were formed as follows, the same electroplating was performed as in Example 35. The operating mode of the initial stage of plating is based on the particle movement time of 4 seconds. This paper scale is applicable to the Chinese standard. () Λ Sight Park (2⑴χ 297, Α) (Please read the notes on the back before writing This page), τ 459072 Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the invention (/ * &gt; 1) The power-on time is 5 seconds, the deceleration time is 1 second, and the stop time is 1 second. About 23 minutes after the start of the forward and reverse β plating, a sample of fine particles was taken and observed under an optical microscope. 'All particles were not aggregated and existed as single particles. The average particle diameter of 100 nickel-plated resin fine particles was 650.00 yra, the thickness of the nickel-plated layer was 0-61 # m, and the specific gravity was 1.247. Based on this, the particle movement time is shortened. 'The operation mode is changed to a cycle of 0.5 seconds for particle movement time, 5 seconds for energization time, 1 second for deceleration time, and 1 second for stop time. Repeat forward and reverse to continue plating. apply. The total plating time is about 140 minutes. When the nickel-plated resin fine particles whose outermost shell was a nickel-plated layer were observed under an optical microscope, all the particles did not aggregate and existed as single particles. In addition, the average particle diameter of 300 nickel-plated resin fine particles was 660.98 / im, and the thickness of the nickel-plated layer was. The coefficient of variation of the particle size was 2.6%, which proved that the thickness of the nickel plating layer was quite uniform. No particles were found to dissolve the underlying nickel plating layer due to the bipolar phenomenon. From the above coating thickness and total plating time, it can be seen that the deposition time per film is about 27.5 minutes. Comparative Example 19 The same electroless nickel-plated fine particles as those used in Example 35 were used, and plating was performed in exactly the same manner as in Example 35 except that the operating conditions were as follows. From the beginning to the end of the plating mode, the particle movement time is 12 seconds, the power-on time is 5 seconds, the deceleration time is 1 second, and the stop time is 1 second. ___ —_ —_____ \ ΊΊ__. This paper standard is applicable to the Chinese country 榡Rate (CNS) Λ4 Regulations (210_ / 297 公 # _1 ~~~ (Jing first read the precautions on the back and then write this page) Install ·

•-IT 459072 A7 經濟部中央標準局员工消费合作社印製 五、發明説明（ί/) 環，重覆正轉和逆轉。 由於粒子移動時間爲過長之12秒，基於離心力的作 用而受到朝外周方向的力之鍍液會在處理室內形成硏缽狀 的旋渦，而使配置於處理室中央的陽極露出，故電流無法 流通，無法進行鍍敷。 比較例20 使用和實施例35完全相同的無電解鍍鎳微粒子，除 運轉條件形成如下述般外，係進行和實施例9完全相同的 鍍敷。 鍍敷初期階段之運轉模式，係以粒子移動時間4秒、 通電時間5秒、減速時間1秒、停止時間1秒爲1循環， 重覆正轉和逆轉。鍍敷開始後，約44分後，採取微粒子的 樣本而以光學顯微鏡觀察的結果，所有的粒子都未凝集而 以單粒子存在。又，經鍍鎳的樹脂微粒子100個的平均粒 徑爲653.06#m，鍍鎳層的厚爲，比重爲1.276。 基於此，將粒子移動時間縮短，將運轉模式變更成以粒子 移動時間〇秒、通電時間5秒、減速時間1秒、停止時間 1秒爲1循環，重覆正轉和逆轉以繼續進行鍍敷。總鍍敷 時間約140分。 將如此般所得之最外殼爲鍍鎳層之鍍鎳樹脂微粒子 以光學顯微鏡觀察時，所有的粒子都未凝集而以單粒子存 在。 然而，由於運轉模式變更後粒子移動時間成爲0秒， 粒子開始朝陰極移動之同時通電也開始，到接觸陰極之間 _ m__ W長尺度適用中國國家標準（CNS ) Λ4現格（210X 297公郯） ---------^裝------ΐτ------Μ i - (請先Μ讀背面之注意事項再J/為本頁) Α7 Β7 五、發明説明（/‘） 會產生雙極現象’有一些粒子之無電解鍍鎳層會溶解掉。 又，此經鍍鎳的樹脂微粒子300個的平均粒徑爲 657.76#m，鑛鎳層的厚爲3.69#m。粒徑的變動係數爲 13.2%，而証明出鍍鎳層的厚相當不均一。 實施例35〜37及比較例19、20之結果顯示於表11中 (請先閲讀背面之注意事項再if-爲本頁) -5 經濟部中央標牟局負工消费合作社印製 織變更 變更時 鍍敷終了 變動係數 總鑛敷 每 ljCtm 開始時間 的娜 時的膜厚 (%) 時間 (分） (//m) (βτη) (分） 敷時間 '· ' ~ 丨丨 _丨一 (分/jam) 實施例35 39 1.02 5.14 2.5 168 32.68 實施例36 37 0.98 5.05 2.7 ---丨 —- 143 28.32 實施例37 23 0.61 5.10 2.6 140 . 27.45 表11 初期運秒 ) 變更後運轉辦系 粒子移 通電 減速 停止 粒子移 通電 減速 停止 動時間 時間 時間 時間 動時間 時間 時間 時間 實施例35 4 5 1 1 2 5 1 一 1 實施例36 4 5 1 1 0.5 5 1 實施例37 4 5 1 1 0.5 5 1 比觀19 12 5 1 1 _ ___ — 比較例20 4 5 1 1 0 5 1 1 本紙張尺度刺中鱗（CNS) (公处） 459073 A7 B7 五、發明説明（/1) 比較例19 一 形成旋渦，電流不通，無法鍍敷 比較例20 44 1.14 3.69 13.2 有雙極職 經濟部中央標準局貝工消費合作社印製 實施例38 在平均粒徑23/zm、CV値5%、長寬比1.04、10%變 形時之K値400kgf/mm2、回復率60%之二乙烯苯聚合物上 ，藉無電解鍍敷以被覆0.2/zm厚之鎳。之後，於外周部設 有陰極且具有設置成和陰極不接觸的陽極之可旋轉的電鍍 裝置外周部形成過濾器，一面補給鑛液一面連續地進行旋 轉、停止、超音波處理、反轉，以鍍敷厚0.8#m的金’而 得出鍍敷厚變動係數10。/。、平均粒徑25ym、CV値5%、 長寬出1.04之導電性微粒子。 此處，平均粒徑、CV値(標準偏差/平均粒徑）、長寬 比係對300個粒子藉顥微鏡觀察所得的値。K値以 K=(3/，2) · F · S·3,2 · R·&quot;2 代表，F代表2(TC、10%壓縮變形時之荷重値(kgf)，S代表 壓縮移位(mm)，R代表半徑(mm)。 回復率係20°C ' 10%壓縮變形後的値。 鑛敷厚及鑛敷變動係數，係對20個鍍敷粒子藉電子 顯微鏡観察以求出。 將該導電性微粒子以1〇%濃度混合並分散於熱硬化性 胃中，而作出各向異性導電膠β藉網版印刷法將該 藤以大致均一的厚度塗布於玻璃_環氧銅面基板(厚l.6mm ’配線寶，電極間距2〇0#«1)上。 於其上方重疊厚ΙΟΟμιη之聚醯胺薄膜基板(厚 ----------1------IT-------终 \/ / 1 . .. (請先閱讀背面之注意事項再^爲本莨) -ia〇- 样張尺度適^ (CNS ) ( 2ίΟΧ 297^^ ) 459072 A7 B7 經濟部中央嫖準局負工消费合作社印製 五、發明説明丨&gt;ρ*) ，配線寬80#m，電極間距200#m) ’於150°C加熱加壓2 分以作出導電連接構造體。 該導電連接構造體的連接電阻値低到0.002Ω，而使 鄰接電極的連接電阻形成1Χ109以上，故可充分地確保線 間絕緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕綠性還是沒 有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至35%爲 止電極間仍不致產生漏電流。 實施例39 除在平均粒徑ll#m、CV値10°/。、長寬比1.09、Κ 値430kgf/'mm2'回復率50%之二乙烯苯聚合物上，藉無電 解鑛敷以被覆厚之鎳’此外係和實施例38相同’ 之後，鍍敷厚的金’而得出鍍敷厚變動係數2〇°/〇、 平均粒徑12#ιη、CV値10%、長寬比1.09之導電性微粒 子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到，而使鄰接 電極的連接電阻形成lx 109以上，故可充分地確保線間絕 (锖先閲讀背面之注意事項再4··,ΐ=Γ本頁) 訂 序 ‘紙張尺度適用中國國家標牟（CNS&gt;A4规格（210x 297公处） 459072 經濟部中央標準局ws：工消費合作社β製 A7 ______B7 _五、發明説明（/I) 緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化》 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至30%爲 止電極間仍不致產生漏電流。 實施例40 除在平均粒徑58#m、CV値5%、·長寬比1.04、Κ値 600.kgf/mm2、回復率70%之架橋丙烯睛共聚物上，藉無電 解鍍敷以被覆〇.2ym厚之鎳，此外係和實施例38相同， 之後，鍍敷厚0.8 Am的金，而得出鍍敷厚變動係數10%、 平均粒徑60#mi CV値5%、長寬比1.04之導電性微粒子 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到0.004Ω，而使鄰接 電極的連接電阻形成lx ίο9以上，故可充分地確保線間絕 緣性。 進行1000次的-40〜85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化β又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化β __-JL32____ _ ί張尺度適用中國國家標皁（CNS ) Λ4规抬（2]0X297公郑）. (請先閲讀背面之注意事項再壤爲本頁) -訂 婢， 經濟部中央橾準局員工消费合作社印製 459072 A7 --—-----B7 五、發明説明（zy) 又’將該導電性微粒子於加壓下浸漬於i2(rc的熱水 中24小時後進行同樣的測試’但連接電阻及絕緣性還是沒 有任何變化。 又’若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低’但在導電性微粒子的濃度上昇至2S%爲 止電極間仍不致產生漏電流。 實施例41 除在平均粒徑23#m、CV値15%、長寬比1.1、K値 400kgf/mrn2'回復率60%之二乙烯苯聚合物上，藉無電解 鍍敷以被覆〇_2#m厚之鎳，此外係和實施例38相同，之 後，鍍敷厚〇.8#m的金，而得出鍍敷厚變動係數1〇%、平 均粒徑25/zm、CV値15%、長寬比μ之導電性微粒子。 .使用該導電性微粒子而進行和實施例38相同的測試 時’導電連接構造體的連接電阻値低到〇·〇〇8Ω，而使鄰接 電極的連接電阻形成1Χ109以上，故可充分地確保線間絕 緣性β 進行1000次的-40〜85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至25。/。爲 ___ -_____133_________ 本紙張尺度適用中國國家檑隼（CNS )/\4说枋（210X297*^ ) &quot; (請先閲讀背面之注意事項再^--¾本頁) --° 辟； 45 90 72 B7 經濟部中央樣準局員工消贽合作社印^ 五、發明説明（/Ή) 止電極間仍不致產生漏電流。 實施例42 除在平均粒徑23^m、CV値10%、長寬比1.2、Κ値 400kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無電解 鍍敷以被覆〇_2/im厚之鎳，此外係和實施例38相同’之 後，鑛敷厚〇.8#m的金，而得出鎪敷厚變動係數1〇%、平 均粒徑25em ' CV値10%、長寬比1.2之導電性微粒子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到〇·〇⑽Ώ，而使鄰接 電極的連接電阻形成1XI09以上，故可充分地確保線間絕 緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 有任何變化β 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至25%爲 止電極間仍不致產生漏電流β 實施例43 除在平均粒徑23/zm、CV値10%、長寬比1·〇9、Κ 値]00kgf/mm2、回復率9%之丙烯酸共聚物上，藉無電解 鍍敷以被覆〇.2#m厚之鎳，此外係和實施例38相同’之 __134 _ ______ L張尺度適用中國國家#嗥（CNS ) Λ4坭拮（2IOX297公# ) (請先閱讀背面之注意事項再填氣本瓦) 裝. 訂 459072 A7 137 五、發明説明 後，銨敷厚〇·8βιη的金，而得出鍍敷厚變動係數10%、平 均粒徑25μηι、CV値10%、長寬比1.09之導電性微粒子 〇 使用該導電性微粒子而進行和實施例38相同的測試 時’導電連接構造體的連接電阻値低到0.004Ω，而使鄰接 電極的連接電阻形成IX 109以上，故可充分地確保線間絕 緣性。 進行1000次的_40~85t的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次時 ’雖然連接電阻稍微上昇但還是位於不致造成問題的範圍 內。 又’將該導電性微粒子於加壓下浸漬於12〇t：的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低’但在導電性微粒子的濃度上昇至25%爲 止電極間仍不致產生漏電流。 經濟部中央標準局具工消费合作社印&quot; (婧先閱讀背而之注意事項再球良表頁} 實施例44 除在平均粒徑23 jam、CV値5%、長寬比1.04、Κ値 3000kgf/mm2、回復率90%之二氧化矽上，藉無電解鍍敷以 被覆0.2# m厚之鎳，此外係和實施例38相同，之後，鍍 敷厚0.8#m的金，而得出鍍敷厚變動係數1〇%、平均粒徑 25&quot;m、CV値50/〇、長寬比1.04之導電性微粒子。 使用該導電性微粒子而進行和實施例38相同的測試 ____ 135 _____ 本紙掁尺度適用中國國家標準（CNS〉Λ4规袼（210X 297公# ) A7 459072 五、發明説明（/巧） 時，導電連接構造體的連接電阻値低到0.01 Ω，而使鄰接 電極的連接電阻形成1X109以上，故可充分地確保線間絕 緣性β 進行1000次的〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 有任何變化》 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至35°/〇爲 止電極間仍不致產生漏電流。 實施例45• -IT 459072 A7 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. The description of the invention (ί /) ring, repeat the forward and reverse. Because the particle travel time is too long for 12 seconds, the plating solution subjected to a force in the peripheral direction due to the action of centrifugal force will form a bowl-shaped vortex in the processing chamber, and the anode disposed in the center of the processing chamber will be exposed, so the current cannot be transmitted. Circulation, plating cannot be performed. Comparative Example 20 The same electroless nickel-plated fine particles as in Example 35 were used, and the plating was performed in exactly the same manner as in Example 9 except that the operating conditions were as follows. The operation mode of the initial stage of plating is to repeat the forward rotation and reverse rotation with a cycle of 4 seconds for particle movement, 5 seconds for energization time, 1 second for deceleration time, and 1 second for stop time. After the start of plating, about 44 minutes later, a sample of fine particles was taken and observed with an optical microscope. As a result, all particles were not aggregated and existed as single particles. The average particle diameter of 100 nickel-plated resin fine particles was 653.06 # m, the thickness of the nickel-plated layer was 1, and the specific gravity was 1.276. Based on this, the particle moving time is shortened, and the operation mode is changed to one cycle with particle moving time of 0 seconds, energization time of 5 seconds, deceleration time of 1 second, and stop time of 1 second, repeating forward and reverse to continue plating . The total plating time is about 140 minutes. When the nickel-plated resin fine particles whose outermost shell was a nickel-plated layer were observed under an optical microscope, all the particles did not aggregate and existed as single particles. However, since the movement time of the particles becomes 0 seconds after the operation mode is changed, the particles start to move toward the cathode and the energization also starts. Between the contact with the cathode _ m__ W long scale applies Chinese National Standard (CNS) Λ4 grid (210X 297 cm) ) --------- ^ 装 ------ ΐτ ------ Μ i-(Please read the notes on the back before J / for this page) Α7 Β7 V. Description of the invention (/ ') A bipolar phenomenon will occur. The electroless nickel plating layer with some particles will dissolve away. The average particle size of the 300 nickel-plated resin fine particles was 657.76 # m, and the thickness of the mineral nickel layer was 3.69 # m. The coefficient of variation of the particle size was 13.2%, and it was proved that the thickness of the nickel plating layer was quite uneven. The results of Examples 35 to 37 and Comparative Examples 19 and 20 are shown in Table 11 (please read the precautions on the back before if-this page) -5 When the printing and weaving of the Central Cooperative Bureau of the Ministry of Economic Affairs changes the printing and weaving changes Coefficient of variation at the end of plating Total film thickness at the beginning of ljCtm Na time (%) Time (minutes) (// m) (βτη) (minutes) Application time '·' ~ 丨 丨 _ 丨 a (minutes / jam) Example 35 39 1.02 5.14 2.5 168 32.68 Example 36 37 0.98 5.05 2.7 --- 丨 --- 143 28.32 Example 37 23 0.61 5.10 2.6 140. 27.45 Table 11 Initial operation seconds Deceleration stop particle transfer current deceleration stop time time time time time time time time Example 35 4 5 1 1 2 5 1 1 1 Example 36 4 5 1 1 0.5 5 1 Example 37 4 5 1 1 0.5 5 1 ratio Viewing 19 12 5 1 1 _ ___ — Comparative Example 20 4 5 1 1 0 5 1 1 Paper Scale Spiny Scale (CNS) (Common Office) 459073 A7 B7 V. Description of the Invention (/ 1) Comparative Example 19 Formation of Vortex , Current is not flowing, and cannot be plated. Comparative Example 20 44 1.14 3.69 13.2 Double Printed in Example 38 by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Divinylbenzene polymer was coated with 0.2 / zm nickel by electroless plating. Thereafter, a filter is formed on the outer peripheral portion of the rotatable electroplating device provided with a cathode on the outer peripheral portion and having an anode not in contact with the cathode, and continuously rotates, stops, ultrasonically processes, and reverses while supplying mineral liquid to The thickness of 0.8 'm was plated to obtain a plating thickness variation coefficient of 10. /. Conductive fine particles with an average particle size of 25ym, CV 値 5%, length and width of 1.04. Here, the average particle size, CV 値 (standard deviation / average particle size), and aspect ratio are obtained by observing 300 particles with a microscope. K 値 is represented by K = (3 /, 2) · F · S · 3,2 · R · &quot; 2, F represents 2 (TC, load at 10% compression deformation 値 (kgf), S represents compression shift (mm), R represents the radius (mm). The recovery rate is 20 ° C '10% 値 after compression deformation. The thickness of the deposit and the coefficient of variation of the deposit are obtained by observing 20 plating particles with an electron microscope. The conductive fine particles were mixed at a concentration of 10% and dispersed in a thermosetting stomach, and an anisotropic conductive adhesive was produced. The screen was printed on the glass_epoxy copper substrate with a uniform thickness by screen printing. (Thickness 1.6mm 'wiring treasure, electrode pitch 2OO # «1). On top of it is a 100 μm thick polyimide film substrate (thick ---------- 1 ----- -IT ------- End \ / / 1 ... (Please read the notes on the back first and then ^ this 莨) -ia〇- Proof scale is appropriate ^ (CNS) (2ίΟΧ 297 ^^) 459072 A7 B7 Printed by the Central Consumers ’Association of the Ministry of Economic Affairs and Consumer Cooperatives. V. Description of the invention 丨 &gt; ρ *), wiring width 80 # m, electrode spacing 200 # m) 'Heating and pressing at 150 ° C for 2 minutes to conduct electricity Connection construct. The connection resistance of this conductive connection structure is as low as 0.002Ω, and the connection resistance of the adjacent electrodes is formed to 1 × 109 or more, so that the insulation between the wires can be sufficiently ensured. Conducted 1000 cycles of -40 ~ 85 ° C cold and hot cycle test, the connection resistance hardly changed. The cold-heat cycle test was performed to 5000 times, but the connection resistance remained unchanged. The same test was performed after immersing the conductive fine particles in hot water at 120 ° C for 24 hours under pressure, but the connection resistance and green insulation were not changed. In addition, if the concentration of the conductive fine particles in the anisotropic conductive paste is increased, the resistance will decrease, but the leakage current will not be generated between the electrodes even if the concentration of the conductive fine particles is increased to 35%. Example 39 The average particle diameter was 11 # m and CV was 10 ° /. , Aspect ratio 1.09, κ 値 430kgf / 'mm2' 50% recovery rate of divinylbenzene polymer, coated with non-electrolytic ore to coat with thick nickel 'otherwise it is the same as in Example 38', Gold 'to obtain conductive fine particles having a plating thickness variation coefficient of 20 ° / 〇, an average particle diameter of 12 # ιη, CV 値 10%, and an aspect ratio of 1.09. When this conductive fine particle was used to perform the same test as in Example 38, the connection resistance of the conductive connection structure was so low that the connection resistance of the adjacent electrodes became lx 109 or more. Therefore, the line-to-line insulation can be sufficiently ensured. Read the notes on the back page again, 4 ··, ΐ = Γ page) Order 'paper size applies to China's national standard (CNS &gt; A4 specification (210x 297 public office) 459072 Central Standards Bureau of the Ministry of Economic Affairs ws: Industry and consumer cooperatives β system A7 ______B7 _V. Explanation of the invention (/ I) Marginal test of cold-heat cycle of -40 ~ 85 ° c 1000 times, there is almost no change in connection resistance. The cold-heat cycle test is performed to 5000 times, but connection There was no change in the resistance. Also, the conductive fine particles were immersed in hot water at 120 ° C for 24 hours under pressure to perform the same test. However, the connection resistance and insulation did not change at all. The concentration of the conductive fine particles in the anisotropic conductive paste will decrease the resistance, but no leakage current will be generated between the electrodes until the concentration of the conductive fine particles increases to 30%. An average particle size of 58 # m, CV 値 5%, · aspect ratio 1.04, κ 値 600.kgf / mm2, and a 70% recovery rate on acrylonitrile copolymer, which is coated by electroless plating to a thickness of 0.2ym Nickel was the same as in Example 38. After that, 0.8 Am gold was plated to obtain conductive fine particles having a plating thickness variation coefficient of 10%, an average particle size of 60 # mi CV 値 5%, and an aspect ratio of 1.04. When this conductive fine particle was used to perform the same test as in Example 38, the connection resistance of the conductive connection structure was as low as 0.004 Ω, and the connection resistance of the adjacent electrodes was formed to 1x or more. Therefore, the insulation between the wires can be sufficiently ensured. After 1000 cold and hot cycle tests of -40 ~ 85 ° C, there was almost no change in the connection resistance β. The cold and heat cycle test was performed to 5000 times, but the connection resistance still did not change any. Β __- JL32____ _ Applicable to China National Standard Soap (CNS) Λ4 Regulations (2) 0X297 Gongzheng. (Please read the notes on the back first, and then this page is the page)-Order, printed by the Central Consumers' Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative 459072 A7 ------- B7 V. Description of the Invention (zy) Electrical microparticles were immersed in hot water of i2 (rc for 24 hours under pressure to perform the same test. 'However, there was no change in connection resistance and insulation.' 'If the concentration of conductive microparticles in the anisotropic conductive adhesive is increased, Since the resistance will decrease, leakage current will not occur between the electrodes until the concentration of conductive fine particles rises to 2S%. Example 41 Except for the average particle size of 23 # m, CV 値 15%, aspect ratio 1.1, K 値400kgf / mrn2 '60% of the divinylbenzene polymer was coated with nickel with a thickness of 0_2 # m by electroless plating, and was the same as in Example 38. After that, the thickness was 0.8mm Conductive fine particles having a plating thickness variation coefficient of 10%, an average particle diameter of 25 / zm, a CV of 15%, and an aspect ratio μ. When using the conductive fine particles and performing the same test as in Example 38, the connection resistance of the conductive connection structure is as low as 0.008 Ω, and the connection resistance of the adjacent electrodes is formed to 1 × 109 or more, so that the wire can be sufficiently secured. Insulation β After performing cold and heat cycle tests at -40 to 85 ° C for 1,000 times, the connection resistance hardly changed. The cold-heat cycle test was performed to 5000 times, but the connection resistance remained unchanged. The same test was performed after immersing the conductive fine particles in hot water at 120 ° C for 24 hours, but the connection resistance and insulation did not change at all. Further, if the concentration of the conductive fine particles in the anisotropic conductive paste is increased, the resistance decreases, but the concentration of the conductive fine particles increases to 25. /. For ___ -_____ 133_________ This paper size is applicable to the Chinese country 檑 隼 (CNS) / \ 4 said * (210X297 * ^) &quot; (Please read the precautions on the back before ^-¾ this page)-° 90 72 B7 Employees of the Central Procurement Bureau of the Ministry of Economic Affairs canceled the seal of the cooperative ^ V. Description of the invention (/ Ή) No leakage current was generated between the stop electrodes. Example 42 Except for a divinylbenzene polymer having an average particle diameter of 23 ^ m, CV 値 10%, aspect ratio 1.2, κ 値 400kgf / mm2, and a recovery rate of 60%, electroless plating was used to cover it. The thickness of nickel is the same as that of Example 38. After that, gold of 0.8 # m was deposited, and the variation coefficient of thickness of 10% was obtained, the average particle size was 25em, and CV was 10%. Conductive fine particles with an aspect ratio of 1.2. When the same test as in Example 38 was performed using this conductive fine particle, the connection resistance of the conductive connection structure was lowered to 0 · 〇⑽Ώ, and the connection resistance of the adjacent electrodes was made 1XI09 or more. Therefore, the insulation between the wires can be sufficiently ensured. Sex. Conducted 1000 cycles of -40 ~ 85 ° C cold and hot cycle test, the connection resistance hardly changed. The cold-heat cycle test was performed to 5000 times, but the connection resistance remained unchanged. The same test was performed after the conductive fine particles were immersed in hot water of 120 ° C for 24 hours under pressure, but the connection resistance and insulation did not change at all. Also, if the conductivity of the anisotropic conductive adhesive is improved, Due to the decrease in the concentration of the fine particles, the leakage current does not occur between the electrodes until the concentration of the conductive fine particles rises to 25%. Example 43 Except for the average particle size of 23 / zm, CV 値 10%, aspect ratio 1.09, κ 値] 00 kgf / mm2, acrylic acid copolymer with a recovery rate of 9%, by electroless plating to cover 0.2 #m thick nickel, in addition to the same as in Example 38 '__134 _ ______ L scale is applicable to Chinese country # 嗥 (CNS) Λ4 坭 （(2IOX297 公 #) (Please read the precautions on the back before filling the tile). Order 459072 A7 137 5. After the description of the invention, the ammonium is thickened. · 8βιη of gold to obtain conductive fine particles with a plating thickness variation coefficient of 10%, an average particle size of 25μηι, CV 値 10%, and an aspect ratio of 1.09. 〇 Using this conductive fine particle, the same test as in Example 38 was performed. 'The connection resistance of the conductive connection structure is as low as 0.004Ω, Resistance of the connecting electrodes formed adjacent IX 109 or more, it can sufficiently ensure the insulation property between lines. After 1000 cold and hot cycle tests of _40 ~ 85t, the connection resistance hardly changed. When the cold-heat cycle test was performed 5,000 times, the connection resistance was slightly increased, but it was within a range not to cause a problem. The same test was performed after immersing the conductive fine particles in hot water at 120 t: for 24 hours, but the connection resistance and insulation did not change at all. If the concentration of the conductive fine particles in the anisotropic conductive paste is increased, the resistance will decrease, but the leakage current will not be generated between the electrodes even if the concentration of the conductive fine particles is increased to 25%. Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Industrial Consumer Cooperatives &quot; (Jing first read the back of the note and then the good table page) Example 44 Except the average particle size of 23 jam, CV 値 5%, aspect ratio 1.04, Κ 値3000kgf / mm2, 90% recovery rate of silicon dioxide, electroless plating was used to coat 0.2 # m of nickel, except that it was the same as in Example 38, and then, 0.8 # m of gold was plated to obtain Conductive fine particles having a variation coefficient of plating thickness of 10%, an average particle diameter of 25 &quot; m, CV 値 50 / 〇, and an aspect ratio of 1.04. The same tests as in Example 38 were performed using the conductive fine particles. __ 135 _____ This paper掁 The scale is in accordance with Chinese national standard (CNS> Λ4 Regulations (210X 297 public #) A7 459072 5. In the description of the invention (/), the connection resistance of the conductive connection structure is as low as 0.01 Ω, which makes the connection resistance of adjacent electrodes The formation of 1X109 or more can fully ensure the insulation between the wires β. The cold and heat cycle test of 1000 to 85 ° C has almost no change in connection resistance. The cold and heat cycle test has been performed to 5000 times, but the connection resistance is still There is no change. Also, this conductive The microparticles were immersed in hot water of 120 ° C for 24 hours under pressure to perform the same test, but the connection resistance and insulation did not change at all. Also, if the concentration of conductive fine particles in the anisotropic conductive adhesive is increased, because Although the resistance is reduced, no leakage current is generated between the electrodes until the concentration of the conductive fine particles rises to 35 ° / 〇. Example 45

除在平均粒徑24.5 、CV値5%、長寬比1.04、K 値4000kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無 電解鍍敷以被覆0.2# m厚之鎳’此外係和實施例38相同 ，之後，電鍍厚O.lym的金，而得出鍍敷厚變動係數30% 、平均粒徑25//m、CV値5%、長寬比1.04之導電性微粒 子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到〇.〇1 Ω，而使鄰接 電極的連接電阻形成1X109以上’故可充分地確保線間絕 緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 _______136_____ 1张尺度通用中國國家標準（〇阳&gt;八4规枋（210/297公处） % — -Λ1/· (請先閲讀背面之注意事項再球，¾本頁) 訂 經濟部中央標準局負工消资合作社印S1 459072 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（/}十） 乎沒有任何變化。又，將該冷熱循環測試進行到5000次’ 但連接電阻還是沒有任何變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還裹沒 有任何變化。 · _ 又，若提高各向異性導電膠中導電性微粒子的濃度’ 由於電阻會降低，但在導電性微粒子的濃度上昇至爲 止電極間仍不致產生漏電流。 實施例46 除在平均粒徑14.5、CV値10%、長寬比1.09 ' Κ 値430kgf/mm2、回復率50%之二乙烯苯聚合物上，藉無電 解鍍敷以被覆〇.2#m厚之鎳，此外係和實施例3S相同’ 之後，電鍍厚5μηι的金，而得出鍍敷厚變動係數10%、 平均粒徑25#m、CV値10%、長寬比1·09之導電性微粒 。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到0.001 Ω，而使鄰接 電極的連接電阻形成1X109以上，故可充分地確保線間絕 緣性。 進行1000次的-40〜85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次時 ，雖形成初期時的5倍，但還是夠低。 又，將該導電性微粒子於加壓下浸漬於120eC的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 ____ 137___ L張尺度適用中國國家摞隼（CNS ) Λ4規；IS ( 210X297公犮） {諳先閲讀背面之注意事項再^-¾本頁)Except on the divinylbenzene polymer with an average particle size of 24.5, CV 値 5%, aspect ratio 1.04, K 値 4000kgf / mm2, and a recovery rate of 60%, 0.2 # m thick nickel is covered by electroless plating. The system is the same as in Example 38. After that, gold having a thickness of O.lym was plated to obtain conductive fine particles having a plating thickness variation coefficient of 30%, an average particle diameter of 25 // m, CV 値 5%, and an aspect ratio of 1.04. When this conductive fine particle was used to perform the same test as in Example 38, the connection resistance of the conductive connection structure was lowered to 0.01 Ω, and the connection resistance of the adjacent electrodes was made 1 × 109 or more. Therefore, the line-to-line connection can be sufficiently secured. Insulation. Carry out 1000 times of -40 ~ 85 ° C cold and hot cycle test, connect the resistance _______136_____ 1 standard common Chinese national standard (〇 阳 &gt; 8 4 gauges (210/297))% — -Λ1 / · ( Please read the precautions on the back first, ¾ this page) Order printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives S1 459072 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economics A7 B7 5. Description of the invention (/) 10 There is no change. Moreover, the cold-heat cycle test was performed up to 5000 times, but the connection resistance was not changed. Also, the conductive fine particles were immersed in hot water of 120 ° C under pressure for 24 hours, and then the same was performed. Test, but the connection resistance and insulation did not change. · _ Also, if the concentration of conductive particles in anisotropic conductive adhesive is increased, the resistance will decrease, but the concentration of conductive particles will increase between the electrodes. No leakage current is generated. Example 46 Except for a divinylbenzene polymer having an average particle size of 14.5, a CV 値 10%, an aspect ratio of 1.09 ′, K 値 430kgf / mm2, and a recovery rate of 50%, it was covered by electroless plating. 〇.2 # m The thickness of nickel is the same as that of Example 3S. After plating 5 μm thick gold, the plating thickness variation coefficient is 10%, the average particle size is 25 # m, CV 値 10%, and the aspect ratio is 1.09. Conductive fine particles. When the same test as in Example 38 was performed using this conductive fine particles, the connection resistance of the conductive connection structure was lowered to 0.001 Ω, and the connection resistance of the adjacent electrodes was formed to 1X109 or more. Therefore, the wire can be sufficiently secured. Insulation. The cold-heat cycle test of -40 ~ 85 ° C was performed 1000 times, and there was almost no change in the connection resistance. When the cold-heat cycle test was performed to 5000 times, although it was 5 times of the initial stage, it was still enough. The same test was performed after the conductive fine particles were immersed in hot water of 120eC under pressure for 24 hours, but the connection resistance and insulation were still not ____ 137___ L-size scale applicable to China National Standard (CNS) Λ4 gauge; IS (210X297 public 犮) {谙 Read the precautions on the back before ^ -¾this page)

,1T 腺Λ 4b y ο 72 ^ A7 B7 五、發明説明（/jf) 有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至40%爲 止電極間仍不致產生漏電流。 實施例47 除在平均粒徑23#m、CV値5%、長寬比1.05、K値 400kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無電解 鍍敷以被覆〇.2#m厚之鎳，此外係和實施例38相同，之 後，鍍敷厚〇.8ym的金，而得出鍍敷厚變動係數50%、平 均粒徑30/^m、CV値10%、長寬比1.1之導電性微粒子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到0.015Ω，而使鄰接 電極的連接電阻形成1X109以上，故可充分地確保線間絕 緣性。 進行1000次的_40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次時 ，雖發現連接電阻稍微上昇但還是在不致造成問題的範圔 內。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，但連接電阻及絕緣性還是沒 有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度’ 由於電阻會降低，但在導電性微粒子的濃度上昇至25%爲 止電極間仍不致產生漏電流。 __________1艰 ...__-_____ 本紙張尺度適用中國國家標準（（：呢）以規拮（210\ 297公#.) 經濟部中央標隼局貝工消阶合作社印製 459072 五、發明説明（/ 4) 實施例48 除在平均粒徑21.5 ym、CV値5。/〇、長寬比1.04、K 値400kgf7mm2、回復率60%之二乙烯苯聚合物上’藉無電 解鍍敷以被覆0.2#m厚之鎳’此外係和實施例38相同’ 之後，電鍍厚5# m的銲錫’而得出鍍敷厚變.動係數10% '平均粒徑32#m、CV値5%、長寬比1.04之導電性微粒 子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値低到〇.〇〇2Ω ’而使鄰接 電極的連接電阻形成1X109以上’故可充分地確保線間絕 緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次， 但連接電阻還是沒有任何變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，連接電阻會形成2倍但還是 夠低，絕緣性則沒有任何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至40%爲 止電極間仍不致產生漏電流。 實施例49 於1C晶片的凸塊上將實施例48所得之導電性微粒子 藉合金接合，將導電性微粒子的周邊以環氧樹脂圍繞後， 和基板上的凸塊對準後，藉加熱加壓以完成合金接合。所 (請先閱讀背面之注意事項再也寫本頁)1T gland Λ 4b y 72 72 A7 B7 V. Description of the invention (/ jf) Any changes. In addition, if the concentration of the conductive fine particles in the anisotropic conductive paste is increased, the electrical resistance will decrease, but the leakage current will not be generated between the electrodes even if the concentration of the conductive fine particles is increased to 40%. Example 47 Except for a divinylbenzene polymer having an average particle diameter of 23 # m, CV 値 5%, aspect ratio 1.05, K 値 400kgf / mm2, and a recovery rate of 60%, electroless plating was used to cover 0.2. The #m thickness of nickel is the same as in Example 38. After that, gold with a thickness of 0.8 μm is plated to obtain a plating thickness variation coefficient of 50%, an average particle size of 30 / ^ m, CV 値 10%, and a length of Conductive fine particles with an aspect ratio of 1.1. When the same test as in Example 38 was performed using this conductive fine particle, the connection resistance of the conductive connection structure was as low as 0.015 Ω, and the connection resistance of the adjacent electrodes was made 1X109 or more, so that the insulation between the wires could be sufficiently ensured. After conducting 1000 cycles of -40 ° C to 85 ° C, the connection resistance hardly changed. When the cold-heat cycle test was performed 5,000 times, although the connection resistance was found to increase slightly, it was still within a range that did not cause problems. The same test was performed after immersing the conductive fine particles in hot water at 120 ° C for 24 hours, but the connection resistance and insulation did not change at all. In addition, if the concentration of the conductive fine particles in the anisotropic conductive paste is increased, the resistance will decrease, but the leakage current will not be generated between the electrodes even if the concentration of the conductive fine particles is increased to 25%. __________1 Difficult ...__-_____ This paper size applies the Chinese national standard ((:?) To limit (210 \ 297 公 #.) Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy 459072 5. Invention Description ( / 4) Example 48 Except for a divinylbenzene polymer having an average particle diameter of 21.5 μm, CV 値 5 //, an aspect ratio of 1.04, K 値 400kgf7mm2, and a recovery rate of 60%, 0.2 was coated by electroless plating. The # m-thick nickel is the same as in Example 38, and the plating thickness is changed by plating 5 # m thick solder. The coefficient of movement is 10%, and the average particle size is 32 # m, CV 値 5%, and the length Conductive fine particles having an aspect ratio of 1.04. When the same test as in Example 38 was performed using the conductive fine particles, the connection resistance of the conductive connection structure was lowered to 0.002Ω ′, so that the connection resistance of the adjacent electrodes was 1 × 109 or more. 'Therefore, the insulation between the wires can be sufficiently ensured. The cold-heat cycle test of -40 ~ 85 ° c was performed 1,000 times, and there was almost no change in the connection resistance. In addition, the cold-heat cycle test was performed to 5000 times, but the connection resistance was not changed. Any change. The conductive fine particles are immersed under pressure. After conducting the same test in hot water at 120 ° C for 24 hours, the connection resistance will be doubled but still low enough, and there will be no change in insulation. If the concentration of conductive particles in the anisotropic conductive adhesive is increased, The resistance will be reduced, but no leakage current will be generated between the electrodes until the concentration of the conductive fine particles rises to 40%. Example 49 The conductive fine particles obtained in Example 48 were bonded to the bumps of the 1C wafer by an alloy to conduct electricity. The periphery of the microparticles is surrounded by epoxy resin and aligned with the bumps on the substrate. The alloy bonding is completed by heating and pressing. (Please read the precautions on the back before writing this page)

•1T 本紙張尺度適用中國國家標準（CNS ) Λ4说拮（210X297公》) 經濟部中失標準局負工消贤合作社印製 4 5 9 ο 7 2 Α7 ______137 五、發明説明（/Vp ~~ 得之構造體係和實施例48相同地具低電阻而可靠性高。 比較例21 除在平均粒徑24.5#m、CV値5%、長寬比1.04、K 値400kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無電 解鍍敷以被覆〇.2^m厚之鎳，此外係和實施例38相同， 之後，藉替代鍍敷以僅使金儘可能析出而鍍敷厚0.1 ， 而得出鍍敷厚變動係數10%、CV値5%、長寬比1.04之導 電性微粒子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値爲〇.〇4Ω而比本發明的 導電性微粒子差，但可使鄰接電極的連接電阻形成1Χ109 以上，而可充分地確保線間絕緣性。 進行1000次的-40〜S5°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次時 ，連接電阻會昇得很高。 又，將該導電性微粒子於加壓下浸漬於的熱水 中24小時後進行同樣的測試，絕緣性雖沒有任何變化，但 連接電阻會上昇。 又，若提高各向異性導電膠中導電性微粒子的濃度， 由於電阻會降低，但在導電性微粒子的濃度上昇至25。/。爲 止電極間仍不致產生漏電流。 比較例22 除在平均粒徑〇.2#m、CV値30%、長寬比1.1、κ値 600kgf/mm2、回復率40%之二乙烯苯聚合物上’藉無電解 ____140_____________ ^张尺度適财關家料（CNS }八4聽（21GX297々&gt;# ) f諳先閲讀背面之注意事項再嗔，¾本頁j• 1T This paper size applies to Chinese National Standards (CNS) Λ4 said (210X297) "Printed by the Ministry of Economic Affairs of the Bureau of Standards and Loss of Consumers and Cooperatives 4 5 9 ο 7 2 Α7 ______137 5. Description of the invention (/ Vp ~~ The obtained structural system has the same low resistance and high reliability as in Example 48. Comparative Example 21 Except for the average particle size of 24.5 # m, CV 値 5%, aspect ratio 1.04, K 値 400kgf / mm2, and 60% recovery rate The second vinylbenzene polymer was coated with nickel with a thickness of 0.2 m by electroless plating, and was the same as in Example 38. After that, the plating thickness was 0.1 by replacing the plating so that only gold was deposited as much as possible. The conductive fine particles having a variation coefficient of plating thickness of 10%, CV 値 5%, and an aspect ratio of 1.04 were obtained. When using the conductive fine particles to perform the same test as in Example 38, the connection resistance of the conductive connection structure 値It is 0.04Ω, which is inferior to the conductive fine particles of the present invention. However, the connection resistance of adjacent electrodes can be made 1 × 109 or more, and the insulation between the wires can be sufficiently ensured. 1,000 cycles of -40 to S5 ° C cold and hot Test, there is almost no change in the connection resistance. When the test is performed 5000 times, the connection resistance rises very high. The same test was performed after the conductive fine particles were immersed in hot water under pressure for 24 hours. Although the insulation did not change, the connection resistance did not change. It will increase. If the concentration of conductive fine particles in the anisotropic conductive paste is increased, the resistance will decrease, but the concentration of conductive fine particles will increase to 25%. No leakage current will occur between the electrodes. Comparative Example 22 On the divinylbenzene polymer with an average particle size of 0.2 # m, CV 値 30%, aspect ratio 1.1, κ 値 600kgf / mm2, and a recovery rate of 40%, 'borrow without electrolysis __140_____________ ^ Zhang scale Shicai Guanjia (CNS) 8 4 listens (21GX297々 &gt;#) f 阅读 Read the precautions on the back first,

經濟部中央標準局貝工消费合作社印鉍 4 5 9 0 7 2 A7 __B7Central Bureau of Standards, Ministry of Economy, Shellfish Consumer Cooperative, India Bi 4 5 9 0 7 2 A7 __B7

五、發明説明（（A 鍍敷以被覆〇.〇5ym厚之鎳外，係和實施例38相同地，之 後，電鍍厚〇.〇5/zm之金，而得出鍍敷厚變動係數20%、 平均粒徑〇.4#m、CV値2%、長寬比1,2之導電性微粒子 〇 使用該導電性微粒子以進行和實施例38同樣的測試 時，會產生部分的連接不良。 比較例23 除在平均粒徑6000#m、CV値5%、長寬比1.04、K 値300kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無電 解鍍敷以被覆〇.2#m厚之鎳外，係和實施例38相同地， 之後，電鍍厚〇.8#m之金，而得出鍍敷厚變動係數10%、 平均粒徑6000#m、CV値5%、長寬比1.04之導電性微粒 子。. 使用該導電性微粒子以進行和實施例38同樣的測試 時，即使電極間距加大成3000//ΙΠ仍無法適用於微細電極 而會產生短路。 比較例24 除在平均粒徑23//m、CV値60%、長寬比1.08、K 値400kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無電 解鍍敷以被覆〇.2#m厚之鎳外，係和實施例38相同，之 後，電鍍厚〇.8μιη之金，而得出鍍敷厚變動係數20%、平 均粒徑25 、CV値60%、長寬比1.1之導電性微粒子。 使用該導電性微粒子而進行和實施例38相同的測試 時，導電連接構造體的連接電阻値雖高到0.03Ω，但可使 _yj____ &amp;張尺度適用中國國家標隼（CNS ) ( 2丨0X29D&gt;^ ) (請先閲讀背面之注意事項再填寫本頁) -Φ 碎 459072 經濟部中央標準局負工消费合作社印製 A7 五、發明説明（丨 鄰接電極的連接電阻形成1X109以上，而可充分地確保線 間絕緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次時 ，連接電阻也幾乎不產生變化。 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，連接電阻和絕緣性都沒有任 何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 在導電性微粒子的濃度上昇至15%時電極間會產生漏電流 〇 比較例25 .除在平均粒徑23μιη，CV値15% '長寬比1.6、Κ値 400kgf/mm2、回復率60%之二乙烯苯聚合物上，藉無電解 鍍敷以被覆〇.2/zm厚之鎳，此外係和實施例38相同，之 後，電鍍厚之金，而得出鍍敷厚變動係數10%、平 均粒徑25 ' CV値15%、長寬比1.6之導電性微粒子》 使用該導電性微粒子而進行和實施例3δ相同的測試 時，導電連接構造體的連接電阻値雖高到0.03Ω，但可使 鄰接電極的連接電阻形成IX 109以上，而可充分地確保線 間絕緣性。 進行1000次的-40〜85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，將該冷熱循環測試進行到5000次時 ’連接電阻也幾乎不產生變化。 --------142____ 、張尺度適用中國國家標準（CNS ) Λ4規彳Μ 2丨〇乂29·?公处） ---------批衣------II------0. \1/^^ (請先間讀背面之注意事項再續.寫本頁) A7 B7 459072 五、發明説明（/V：〇) 又，將該導電性微粒子於加壓下浸漬於120°C的熱水 中24小時後進行同樣的測試，連接電阻和絕緣性都沒有任 何變化。 又，若提高各向異性導電膠中導電性微粒子的濃度， 在導電性微粒子的濃度上昇至15%時電極間會產生漏電流 〇 實施例 除了使用混合器(hybridizer)0_4#m的鎳粒子打進鎳球 中，以使該鎳球表面形成突起後，再鍍金，此外和實施例 39相同而得出導電性微粒子，於進行相同的試驗時，該導 電性微粒子的連接電阻爲充分低的〇.〇〇6Ω，可使鄰接電之 連接電阻成爲IX 以上，而可充分地確保線間絕緣性β 進行1000次的-40~85°c的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至40%爲止電極 間仍不致產生漏電流。 實施例51 除了在鍍鎳金球上塗布的熱可塑性乙烯基系共 聚物樹脂外，係和實施例39相同而得出導電性微粒子，於 進行相同的試驗時，該導電性微粒子的連接電阻爲充分低 的0.006Ω，可使鄰接電之連接電阻成爲1 X 1〇9以上，而 可充分地確保線間絕緣性β 進行1000次的-40〜85°C.的冷熱循環測試，連接電阻幾 乎沒有任何變化。又’若提高各向異性導電膠中導電性微 143 (請先閱讀背面之注意事項再填寫本頁) 、-=8 經濟部中央標準局負工消费合作社印製 匕紙&amp;尺度適用中國國家桃準（cns ) Λ4^格（210X297公浼 經濟部中央標隼局員工消費合作社印製 A 7 137 五、發明説明（/叫） 粒子的濃度，在導電性微粒子的濃度上昇至60°/。爲止電極 間仍不致產生漏電流^ 實施例52 藉由將平均粒徑8ym、長寬比1.17、CV値20%之鑛 鎳金球於環氧樹脂中混合並分散，以作出各向異性導電膠 。藉由網版印刷法以將該導電膠以大致均一的厚度塗布於 玻璃》環氧銅面基板(厚1.6mm、配線寬50#m、電極間距 100 y m)。 重疊上厚l〇〇#m的聚醯胺薄膜基板(厚30#m、配線 寬50#m、電極間距100#m)，於15〇t下加熱加壓2分， 而作出導電連接構造體。 該導電連接構造體的連接電阻爲充分低的0.006Ω， 可使鄰接電之連接電阻成爲1X109以上，而可充分地確保 線間絕緣性。 進行1000次的·40〜85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至40%爲止電極 間仍不致產生漏電流。 實施例53 除使甩鎳鉋球以外係和實施例39相同地得出導電性 微粒子，進行相同試驗之結果，該導電性微粒子的連接電 阻爲充分低的0.007Ω，可使鄰接電之連接電阻成爲1Χ109 以上，而可充分地確保線間絕緣性。 進行1〇〇〇次的-40〜85°C的冷熱循環測試，連接電阻幾 本紙張又度適用中國國家標準（CNS ) Λ4規梢（210X2&lt;m&gt;^ ) (讶先閱讀背面之注意事項再本頁)V. Description of the invention ((A plating except for coating with a thickness of 0.05 μm is the same as in Example 38. After that, gold with a thickness of 0.05 / zm is plated to obtain a plating thickness variation coefficient of 20 %, Average particle size 0.4 # m, CV 値 2%, conductive fine particles having an aspect ratio of 1,2. When this conductive fine particle was used to perform the same test as in Example 38, part of the connection failure occurred. Comparative Example 23 Except for a divinylbenzene polymer having an average particle size of 6000 # m, CV 値 5%, aspect ratio 1.04, K 値 300kgf / mm2, and a recovery rate of 60%, it was coated by electroless plating. 0.2 Except for the nickel with a thickness of #m, it is the same as in Example 38. After that, gold with a thickness of 0.8 # m is plated to obtain a plating thickness variation coefficient of 10%, an average particle size of 6000 # m, CV 値 5%, Conductive fine particles with an aspect ratio of 1.04. When this conductive fine particles were used to perform the same test as in Example 38, even if the electrode pitch was increased to 3000 // ΙΠ, it could not be applied to fine electrodes and short-circuited. Comparative Example 24 Except Electroless plating on a divinylbenzene polymer with an average particle size of 23 // m, CV 値 60%, aspect ratio 1.08, K 値 400kgf / mm2, and 60% recovery rate The coating was coated with 0.2 # m thick nickel, which was the same as in Example 38. After that, gold with a thickness of 0.8μm was plated to obtain a plating thickness variation coefficient of 20%, an average particle diameter of 25, and a CV 値 60%, Conductive fine particles having an aspect ratio of 1.1. When the same test as in Example 38 was performed using this conductive fine particles, although the connection resistance 値 of the conductive connection structure was as high as 0.03 Ω, _yj____ &amp; Zhang scale can be applied to China National Standards (CNS) (2 丨 0X29D &gt; ^) (Please read the notes on the back before filling in this page) -Φ 459072 Printed by A7 Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The connection resistance is more than 1X109, which can fully ensure the insulation between the wires. The cold and heat cycle test of -40 ~ 85 ° c was performed 1,000 times, and the connection resistance was hardly changed. The cold and heat cycle test was performed to 5000 times. At that time, the connection resistance hardly changed. Also, the conductive fine particles were immersed in hot water of 120 ° C for 24 hours under pressure, and the same test was performed without any change in connection resistance or insulation. If raised The concentration of the conductive particles in the anisotropic conductive paste will cause a leakage current between the electrodes when the concentration of the conductive particles increases to 15%. Comparative Example 25. Except for an average particle diameter of 23 μm, CV 値 15% 'Aspect ratio 1.6 , K 値 400kgf / mm2, Divinylbenzene polymer with a recovery rate of 60%, by electroless plating to cover nickel with a thickness of 0.2 / zm, except that it is the same as in Example 38, and after that, thick gold is plated. Conductive fine particles with a variation coefficient of plating thickness of 10%, an average particle size of 25 'CV 値 15%, and an aspect ratio of 1.6 were obtained. "When conducting the same test as in Example 3δ using this conductive fine particle, the conductive connection structure Although the connection resistance is as high as 0.03Ω, the connection resistance of adjacent electrodes can be made IX 109 or more, and the insulation between the wires can be sufficiently ensured. Conducted 1000 cycles of -40 ~ 85 ° C cold and hot cycle test, the connection resistance hardly changed. When this cold-heat cycle test was performed up to 5000 times, the 'connection resistance hardly changed. -------- 142____, Zhang scale is applicable to Chinese National Standards (CNS) Λ4 Regulations 2 2 2 〇〇29 ·? Public Office) --------- Approval of clothes -------- II ------ 0. \ 1 / ^^ (please read the precautions on the back before continuing. Write this page) A7 B7 459072 V. Description of the invention (/ V: 〇) Also, the conductive fine particles The same test was performed after being immersed in hot water at 120 ° C for 24 hours under pressure, without any change in connection resistance and insulation. In addition, if the concentration of the conductive particles in the anisotropic conductive paste is increased, a leakage current will be generated between the electrodes when the concentration of the conductive particles is increased to 15%. In the example, a nickel (Hybridizer) 0_4 # m was used to beat Into the nickel ball, the surface of the nickel ball was protruded, and then gold-plated, and conductive particles were obtained in the same manner as in Example 39. When the same test was performed, the connection resistance of the conductive particles was sufficiently low. .00 Ω can make the connection resistance of the adjacent electric power more than IX, and can fully ensure the insulation between the wires β. The cold and heat cycle test of -40 ~ 85 ° c for 1000 times, there is almost no change in the connection resistance. Further, if the concentration of the conductive fine particles in the anisotropic conductive paste is increased, no leakage current will be generated between the electrodes until the concentration of the conductive fine particles increases to 40%. Example 51 Except for a thermoplastic vinyl copolymer resin coated on a nickel-plated gold ball, conductive particles were obtained in the same manner as in Example 39. When the same test was performed, the connection resistance of the conductive particles was A sufficiently low 0.006 Ω can make the connection resistance of the adjacent electricity to 1 X 109 or more, and can fully ensure the insulation between the wires. Β The cold and heat cycle test of -40 to 85 ° C for 1,000 times, the connection resistance is almost No change. Also 'if you increase the conductivity of the anisotropic conductive adhesive 143 (please read the precautions on the back before filling out this page),-= 8 printed dagger paper &amp; standard for the Chinese government Tao Zhun (cns) Λ4 ^ grid (210X297 printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, printed by A 7 137) 5. Description of the invention (/ called) The concentration of particles rises to 60 ° / in the concentration of conductive particles. No leakage current was generated between the electrodes so far. Example 52 An anisotropic conductive adhesive was prepared by mixing and dispersing an ore nickel-gold ball with an average particle diameter of 8 μm, an aspect ratio of 1.17, and a CV of 20% in an epoxy resin. The screen printing method was used to apply this conductive paste to glass "epoxy copper surface substrate (thickness 1.6mm, wiring width 50 # m, electrode pitch 100 ym) at a substantially uniform thickness. Overlaid thickness 〇〇 # m of polyimide film substrate (thickness 30 # m, wiring width 50 # m, electrode spacing 100 # m), heated and pressurized at 150t for 2 minutes to make a conductive connection structure. The connection resistance is sufficiently low at 0.006Ω, which can make the connection resistance of the adjacent electricity to 1 X109 or more, it can fully ensure the insulation between the wires. The cold and heat cycle test of 1000 to 40 ~ 85 ° C has almost no change in the connection resistance. If the concentration of conductive particles in the anisotropic conductive adhesive is increased, No leakage current was generated between the electrodes until the concentration of the conductive fine particles increased to 40%. Example 53 Except for the nickel shaving ball, conductive fine particles were obtained in the same manner as in Example 39, and the same test result was obtained. The connection resistance of conductive fine particles is 0.007Ω, which is sufficiently low, and the connection resistance of adjacent electricity can be 1 × 109 or more, and the insulation between the wires can be sufficiently ensured. 10,000 cycles of -40 to 85 ° C cold and heat cycles Test and connect resistance papers to China National Standard (CNS) Λ4 gauge (210X2 &lt; m &gt; ^) (please read the precautions on the back first and then this page)

、1T 45^072 A7 B7 經濟部中央標準局貝工消费合作社印^ 五、發明説明（/ + 1) 乎沒有任何變化。又，若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至40%爲止電極 間仍不致產生漏電流。 實施例54 除鍍金時採電鍍且鍍敷厚爲〇.2#m外，係和實施例 39相同地得出導電性微粒子，進行相同試驗之結果，該導 電性微粒子的連接電阻爲充分低的0.007Ω，可使鄰接電之 連接電阻成爲1X109以上，而可充分地確保線間絕緣性。 進行1000次的·4〇〜85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又*若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至40%爲止電極 間仍不致產生漏電流。 實施例55 除使用長寬比1.17、CV値18%之鍍銅金球外，係和 實施例39相同地得出導電性微粒子，進行相同試驗的結果 ，該導電性微粒子的連接電阻爲充分低的〇·〇〇5Ω，可使鄰 接電之連接電阻成爲IX 1〇9以上，而可充分地確保線間絕 緣性。 進行1000次的-40〜85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至60°/。爲止電極 間仍不致產生漏電流。 實施例56 除對長寬比、CV値18%之銅施予0.15#m的無 ____-_145,----- 本紙张尺度適用中國國家標準（CNS ) Λ4坭梠（2丨0X 297公处） (請先閲讀背面之注意事項再^¾本頁) —裝· 訂· 序 459072 A7 B7 五 發明説明（/0) 電解鍍鎳後再鍍金，而使用所得之金屬球外’保和實施例 39相同地得出導電性微粒子，進行同樣試驗的結果，該導 電性微粒子的連接電阻爲充分低的〇.〇〇5Ω ’可使鄰接電之 連接電阻成爲IX 以上，而可充分地確保線間絕緣性。 進行1000次的-40~85°C的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至35%爲止電極 間仍不致產生漏電流。 比較例26 除使用長寬比1.2、CV値42%的鍍鎳(INCO社製》鎳 粉4SP)金球外，係和實施例38同樣地得出導電性微粒子 ’進行同樣試驗之結果，該導電性微粒子的連接電阻爲 0.025Ω而變差，但可使鄰接電之連接電阻成爲1X109以上 ’而可充分地確保線間絕緣性。 進行1000次的-40〜85。(：的冷熱循環測試，連接電阻幾 乎沒有任何變化。又，若提高各向異性導電膠中導電性微 粒子的濃度，在導電性微粒子的濃度上昇至30%時電極間 會產生漏電流。 比較例27 除使甩長寬比1.Π、CV値18%之鎳球外’係和實施 例38同樣地得出導電性微粒子，進行同樣試驗之結果’該 導電性微粒子的連接電阻爲充分低的0.009Ω，可使鄰接電 之連接電阻成爲IX 109以上，而可充分地確保線間絕緣性 146 ---------^衣------ΐτ------Μ {請先閱讀背面之注意事項再硝，¾本頁) 經濟部中央標率扃貝工消费合作社印54 4590 721T 45 ^ 072 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 5. Description of the invention (/ + 1) There is almost no change. Further, if the concentration of the conductive fine particles in the anisotropic conductive paste is increased, no leakage current will be generated between the electrodes until the concentration of the conductive fine particles increases to 40%. Example 54 Conductive fine particles were obtained in the same manner as in Example 39 except that electroplating was performed during gold plating and the plating thickness was 0.2 # m. The same test was performed, and the connection resistance of the conductive fine particles was sufficiently low. 0.007Ω can make the connection resistance of the adjacent electric power 1X109 or more, and can fully ensure the insulation between the wires. After 1000 cold and hot cycle tests at 40 ° C to 85 ° C, the connection resistance hardly changed. * If the concentration of the conductive fine particles in the anisotropic conductive paste is increased, no leakage current will be generated between the electrodes until the concentration of the conductive fine particles increases to 40%. Example 55 Except that copper-plated gold balls having an aspect ratio of 1.17 and CV 金 18% were used, conductive fine particles were obtained in the same manner as in Example 39, and the same test was performed. The connection resistance of the conductive fine particles was sufficiently low. The ohmic resistance of 0.05 Ω can make the connection resistance of the adjacent electricity to IX 109 or more, and can sufficiently ensure the insulation between the wires. After 1000 cycles of -40 to 85 ° C cold and hot cycle tests, the connection resistance hardly changed. When the concentration of the conductive fine particles in the anisotropic conductive paste is increased, the concentration of the conductive fine particles increases to 60 ° /. There is still no leakage current between the electrodes. Example 56 Except for 0.15 # m of copper with a length-to-width ratio and CV 无 18%, ____-_ 145, ----- This paper size applies the Chinese National Standard (CNS) Λ4 坭 梠 (2 丨 0X 297 (Public Office) (Please read the precautions on the back before ^ ¾ page) — binding · ordering · order 459072 A7 B7 Five invention description (/ 0) Electrolytic nickel plating and then gold plating, and the use of the obtained metal balls outside the In Example 39, conductive fine particles were obtained in the same manner. As a result of conducting the same test, the connection resistance of the conductive fine particles was sufficiently low, 0.05 Ohm. Insulation between wires. After 1000 cold and hot cycle tests of -40 ~ 85 ° C, the connection resistance hardly changed. If the concentration of the conductive fine particles in the anisotropic conductive paste is increased, no leakage current will be generated between the electrodes until the concentration of the conductive fine particles rises to 35%. Comparative Example 26 Except the use of nickel-plated (nickel powder 4SP, nickel powder 4SP) gold balls with an aspect ratio of 1.2 and CV 値 42%, the same results as in Example 38 were obtained for conducting conductive fine particles. The connection resistance of the conductive fine particles is degraded by 0.025 Ω, but the connection resistance of the adjacent electricity can be made 1 × 109 or more ', and the insulation between the wires can be sufficiently ensured. Perform 1000 times from -40 to 85. (: Cold and hot cycle test, there is almost no change in the connection resistance. If the concentration of conductive particles in the anisotropic conductive adhesive is increased, a leakage current will occur between the electrodes when the concentration of the conductive particles increases to 30%. Comparative Example 27 Conductive fine particles were obtained in the same manner as in Example 38 except that the nickel balls with a length-to-width ratio of 1.Π and CV 値 18% were removed. The results of the same test showed that the connection resistance of the conductive fine particles was sufficiently low. 0.009Ω, which can make the connection resistance of the adjacent electricity more than IX 109, and can fully ensure the insulation between the lines 146 --------- ^ 衣 ------ ΐτ ------ Μ {Please read the precautions on the back first, then ¾ page) Central Standards of the Ministry of Economic Affairs, Pui Gong Consumer Cooperatives 54 54 90 72

經濟部中央標準局员工消费合作社印製 五、發明説明（/#ψ) 又，若提高各向異性導電膠中導電性微粒子的濃度’ 在導電性微粒子的濃度上昇至45%爲止電極間仍不致產$ 漏電流。但是，在進行1000次的-40〜85°C的冷熱循環瑯試 時，連接電阻會變成10倍。 比較例28 除使用長寬比1.17、CV値18%之銅球外，係和實施 例38同樣地得出導電性微粒子，進行同樣試驗之結果，該 導電性微粒子的連接電阻爲充分低的0.006Ω，可使鄰接憾 之連接電阻成爲1X109以上，而可充分地確保線間絕緣性 〇 又，若提高各向異性導電膠中導電性微粒子的濃度， 在導電性微粒子的濃度上昇至40%爲止電極間仍不致產生 漏電流。但是，在進行1000次的-40~85°C的冷熱循環測試 時，連接電阻會變成3倍◊ 比較例29 - 除使用長寬比1.17、CV値18%之鎳球外，係和實施 例38同樣地得出導電性微粒子，進行同樣試驗之結果，該 導電性微粒子的連接電阻爲充分低的0.006Ω，可使鄰接電 之連接電阻成爲IX 1〇9以上，而可充分地確保線間絕緣性 〇&gt; 又，若提高各向異性導電膠中導電性微粒子的濃度， 在導電性微粒子的濃度上昇至40%爲止電極間仍不致產生 漏電流。但是，在進行1000次的-40〜85°C的冷熱循環測試 時’係觀察到會產生據信爲因移動（migration)所致之短路 _____________147____ _ 本紙張尺度適用中國國家榡準（CNS ) Λ4规梠（210X297公筇） ^ ---------^-- 锖先站该背,|&amp;之注意事項存欢爲本買)Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (/ # ψ) In addition, if the concentration of conductive fine particles in the anisotropic conductive adhesive is increased, the concentration of conductive fine particles will not increase between 45% of the electrodes. $ Leakage current. However, the connection resistance will be increased by 10 times during 1000 cycles of -40 to 85 ° C cold-heat cycle test. Comparative Example 28 Conductive fine particles were obtained in the same manner as in Example 38 except that copper balls having an aspect ratio of 1.17 and CV 値 18% were used. As a result of conducting the same test, the connection resistance of the conductive fine particles was sufficiently low to 0.006. Ω can make the connection resistance of the adjacent electrode 1X109 or more, and can fully ensure the insulation between the wires. Also, if the concentration of the conductive particles in the anisotropic conductive adhesive is increased, the concentration of the conductive particles is increased to 40%. No leakage current is generated between the electrodes. However, when the cold-heat cycle test of -40 ~ 85 ° C is performed 1000 times, the connection resistance will be tripled. Comparative Example 29-Except the use of nickel balls with an aspect ratio of 1.17 and CV% 18%, this is an example 38 Conductive fine particles were obtained in the same way. As a result of conducting the same test, the connection resistance of the conductive fine particles was sufficiently low to 0.006Ω, and the connection resistance of the adjacent electricity could be IX 109 or more, and the line-to-line connection could be sufficiently ensured. Insulation 〇 &gt; If the concentration of the conductive fine particles in the anisotropic conductive paste is increased, no leakage current will be generated between the electrodes until the concentration of the conductive fine particles increases to 40%. However, during 1000 cold and hot cycle tests at -40 ~ 85 ° C, 'a short circuit that is believed to be caused by migration was observed. ____________147147_ _ This paper standard applies to China National Standards (CNS) Λ4 gauge (210X297) 筇 ^ --------- ^-站 Stand to the back first, and the precautions for &amp; buy for the sake of purchase)

1T 45 90 72 A 7 ____B7 五、發明説明（4() ο 比較例30 除使用在長寬比1.05、CV値8%之架橋聚苯乙烯聚合 物上鍍金所得之球外，係相實施例38同樣地得出導電性微 粒子，進行同樣試驗之結果，該導電性微粒子的連接電阻 爲0.02Ω而變差，但可使鄰接電之連接電阻成爲1X109以 上，而可充分地確保線間絕緣性。 又，若提高各向異性導電膠中導電性微粒子的濃度， 在導電性微粒子的濃度上昇至25%時電極間會產生漏電流 。在進行1〇〇〇次的-40〜85°C的冷熱循環測試時，連接電阻 幾乎沒有任何變化◊ 、比較例31 .除使用平均粒徑200#m、長寬比1.05、CV値8%之 鍍鎳金球外，係和實施例38同樣地得出導電性微粒子，要 進行同樣的試驗時，在結合劑溶液的階段粒子會沉降，而 無法良好地製作出各向異性導電膠。 比較例23 除使用〇.2#m以下的鍍鎳金粉外，係和實施例38同 樣地得出導電性微粒子，要進行同樣的試驗時，即使提高 粉的濃度還是會產生連接不良的部分，而無法順利地進行 試驗。 實施例57 (A)基材粒子的製造 藉懸浮聚合法以進行二乙烯苯的聚合後，施以濕式分 _148___ 本紙張尺度適用中國國家標牟（CNS ) /\4况格（210XW7公你） (請先閱讀背面之注意事項再蟥，¾本頁) 裝· •-p 腺. 經濟部中央椋準局負工消资合作杜印^ 經濟部中央橾準局貞工消f合作社印製 ^ 4 5 9 〇 Τ 2 Α7 Β7 五、發明説明（/4) 級而製造出基材粒子。該基材粒子係平均粒徑100#m ;標 準偏差 0.98 # m、CV 値 0.98%。 (B) 藉形成導電金屬層以製作導電性微粒子 其次，作爲基材粒子的前處理，係對上述基材粒子施 予無電解鍍鎳處理，而於上述基材粒子表面形成0.15/zm 的鍍鎳層。 接著，使用鍍敷裝置之Flowthrough Plater(上村工業 社製），將完成前處理的基材粒子浸漬於含氯化鎳、硫酸鎳 、硼酸之鍍浴後施以電鍍處理，藉此以形成鎳厚分別爲2 、5、13 等3種導電金屬層，而作出導電性微粒子。 (C) IC晶片上導電性微粒子的載置 於鋁上，使用具有鍍鎳、銅的電極部、且電極的間距 爲150#m(周邊配置)之接腳數200的1C晶片(晶圓），於該 1C晶片的電極部藉網版印刷而形成厚的銀膠(銀薄 片/環氧接著'劑）。 接著，使用日鐵麥克羅社製之球裝載器，朝著在對應 於1C晶片的電極位置上設有直徑30 的球吸附孔的模具 之該吸附孔將球吸附，以於1C晶片的電上載置球。 之後’藉由13(TC、5分的加熱，以於1C晶片(晶圓) 的電極部上固定導電性微粒子，藉由裁切晶圓，以將1C晶 片(晶圓)裁成晶片尺寸。 (D) 朝基板之1C晶片的連接、固定 接著’使用在對應於1C晶極部的位置上藉無電解鍍 銅Μ形成電極部之玻璃環氧基板，於該玻璃環氧基板的電 —---- 149 本紙張尺度適用中國國家標準（CNS ) 見祐（2ΙΟΧ297公 (請先閲讀背面之注意事項再填舄本頁) 、1' 45 9 Ο 72 Α7 B7 五、發明説明（/q) . 極部進行銀膠印刷處理後，使用接合裝置以實施固定有導 電性微粒子的ic晶片之加熱固定。 評價 對於上述實施例51中所得之基材粒子、導電性微粒 子及連接固定有1C晶片之玻璃環氧基板，進行以下般的評 價試驗以評價其特性。結果顯示於表12中。 (1) 基材粒子的熱傳導率 製作出和基材粒子相同材質的厚1.0mm的薄片，使用 迅速熱傳導率計(京都電子社製，QTM-D3型)以測定熱傳導 率《 (2) 導電金屬層的抗張強度 在和對基材粒子的鍍敷相同條件下，製作出厚〇.5mm 之薄膜狀試料，使用拉伸試驗機(島津製作所製Autograph) ，以拉伸速度l〇mm/min進行測定3 (3) 導電性微粒子對1C晶片(晶圓)電極部之接合強度評價 作爲試驗裝置，係使用接合試驗機(雷斯卡社製PTR-10型），以應變移位速度〇.〇5mm/sec、位置30#m進行應 變變形試驗，依據可回復之彈性應變量、導電性微粒子的 應變變形，以求出從1C晶片(晶圖)電極部之剝離強度。 (4) 耐熱試驗 作爲試驗裝置係使用答拜製作所製之Perfect烘箱，於 20(TC下加熱500小時，以調査電接合狀態。 (5) 熱循環試驗 作爲試驗裝置，係使用共德科學社製之熱循環試驗機 ___________150____ 尺度適用中國國家標準（CNsTa4规梢&lt;2ΙΟΧ29^·發) -----裝-- \i/· (請先閱讀背面之注意事項再&quot;寫本頁) 訂 &gt;’ 無濟部中央標隼局員工消费合作社印掣 A7 經濟部中央標準局負工消费合作社印製 45 9 072 五、發明説明（/士Λ ，於160°C維持30分後於-40°C維持30分，重覆此熱循環 1000次後，調査接合部的電連接狀態。 (6)極限電流値試驗 使用直流安定化電源裝置，在二電極間一面慢慢地增 加電壓一面通電流，調査電壓-電流直線的極限點之電流。 實施例58 (A) 基材粒子的製造 除變化懸浮聚合的條件外，和實施例57同樣地製造 出平均粒釋50/zm'標準偏差0.53gm、CV値1.06%之乙 烯苯聚合物。 (B) 藉由形成導電金屬層之導電性微粒子的製作 接著，和實施例57同樣地對基材粒子施以前處理， 以於上述基材粒子上形成O.Mym的鍍鎳層。 接著，使用和實施例57同樣的鍍敷裝置，將完成前 處理的基材粒子浸漬於含氰化金鉀之鍍浴中以施予電鍍處 理，藉此以形成金厚2ym的導電金屬層而製作出導電性 微粒子。 (C) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例57同樣地進行。 評僭 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評價 試驗以評價其特性。結果顯示於表12中。 ----------151 ____ &amp;張尺度適用中國國家榡绛（CNS ) Λ4現格（210x497公烚） {請先閲讀背面之注項再务寫本頁)1T 45 90 72 A 7 ____B7 V. Description of the invention (4 () ο Comparative Example 30 Except for using a ball obtained by plating gold on a bridged polystyrene polymer with an aspect ratio of 1.05 and CV 値 8%, it is the same as Example 38 Conductive fine particles were obtained in the same manner. As a result of conducting the same test, the connection resistance of the conductive fine particles was deteriorated by 0.02Ω, but the connection resistance of the adjacent electric power was made 1X109 or more, and the insulation between the wires could be sufficiently ensured. In addition, if the concentration of the conductive fine particles in the anisotropic conductive adhesive is increased, a leakage current will be generated between the electrodes when the concentration of the conductive fine particles is increased to 25%. Cold and heat at -40 to 85 ° C for 1,000 times During the cycle test, there was almost no change in the connection resistance 比较, Comparative Example 31. Except the use of nickel-plated gold balls with an average particle diameter of 200 # m, an aspect ratio of 1.05, and a CV of 8%, the same results were obtained as in Example 38. For the conductive fine particles, when the same test is performed, the particles settle at the stage of the binder solution, and an anisotropic conductive adhesive cannot be produced satisfactorily. Comparative Example 23 Except using nickel-plated gold powder having a size of 0.2 m or less, This is the same as in Example 38. When conducting the same test for conductive fine particles, even if the concentration of the powder is increased, a connection failure portion will be generated, and the test cannot be performed smoothly. Example 57 (A) Production of substrate particles A suspension polymerization method was used to perform diethylene. After the polymerization of benzene, apply wet separation _148___ This paper size is applicable to China National Standards (CNS) / \ 4 情 格 (210XW7 公 你) (Please read the precautions on the back first, 蟥 this page) Loading · • -p gland. Du Yin printed by the Central Ministry of Economic Affairs of the Ministry of Economic Affairs of the Ministry of Economic Affairs ^ Printed by the Central Ministry of Economic Affairs of the Central Ministry of Economic Affairs of the Ministry of Economic Affairs ^ 4 5 9 〇Τ 2 Α7 Β7 V. Description of the invention (/ 4) The substrate particles were manufactured. The average particle diameter of the substrate particles was 100 # m; the standard deviation was 0.98 # m, and the CV was 0.98%. (B) Conductive fine particles were formed by forming a conductive metal layer. The pretreatment is performed by subjecting the substrate particles to electroless nickel plating to form a nickel plating layer of 0.15 / zm on the surface of the substrate particles. Next, a Flowthrough Plater (manufactured by Uemura Industrial Co., Ltd.) using a plating apparatus was used. Pretreated substrate particles are immersed in After the plating bath containing nickel chloride, nickel sulfate, and boric acid is subjected to electroplating treatment, thereby forming three kinds of conductive metal layers having a thickness of 2, 5, 13 and the like to form conductive fine particles. (C) Conduction on the IC chip The fine particles are placed on aluminum, and a 1C wafer (wafer) having an electrode portion of nickel and copper plating with a pin pitch of 150 # m (peripheral arrangement) and a number of 200 is used. A thick silver paste (silver sheet / epoxy adhesive) was formed by screen printing. Next, a ball loader made by Nippon Steele Macro was used to provide a diameter at the electrode position corresponding to the 1C chip. A 30-ball mold with a ball-adsorption hole adsorbs the ball to place the ball on the 1C wafer. After that, 13C, 5 minutes of heating were used to fix conductive particles on the electrode portion of the 1C wafer (wafer), and the 1C wafer (wafer) was cut to a wafer size by cutting the wafer. (D) Connect, fix, and fix the 1C wafer to the substrate. Then, use a glass epoxy substrate formed by electroless copper plating at the position corresponding to the 1C crystal portion. Electrode --- --- 149 This paper is in accordance with Chinese National Standards (CNS). See You (2ΙΟχ297) (Please read the precautions on the back before filling this page), 1 '45 9 Ο 72 Α7 B7 V. Description of the invention (/ q) After the electrodes were printed with silver paste, the bonding device was used to heat and fix the ic wafer with the conductive fine particles fixed. The substrate particles, the conductive fine particles, and the 1C chip fixed to the substrate obtained in Example 51 were evaluated. The glass epoxy substrate was subjected to the following evaluation tests to evaluate its characteristics. The results are shown in Table 12. (1) Thermal conductivity of substrate particles A 1.0-mm-thick sheet having the same material as the substrate particles was prepared and used for rapid thermal conduction. Rate meter (Kyoto Electronics (Manufactured, QTM-D3 type) in order to measure the thermal conductivity "(2) The tensile strength of the conductive metal layer was produced under the same conditions as the plating of the substrate particles, and a 0.5 mm thick film-like sample was prepared and subjected to a tensile test. Machine (Autograph manufactured by Shimadzu Corporation) and measured at a tensile speed of 10 mm / min. 3 (3) Evaluation of the bonding strength of conductive particles to the electrode portion of a 1C wafer (wafer) As a test device, a bonding tester (Ray PTR-10 type manufactured by Ska Corporation). Strain deformation test was performed at a strain displacement speed of 0.05 mm / sec and a position of 30 # m. Based on the recoverable elastic strain and the strain deformation of conductive fine particles, Peel strength of electrode part of 1C wafer (crystal pattern). (4) Heat resistance test As a test device, a Perfect oven manufactured by Abe Manufacturing Co., Ltd. was heated at 20 (TC for 500 hours) to investigate the electrical bonding state. (5) Thermal cycle test As a test device, a thermal cycle tester manufactured by Gongde Science Co., Ltd. is used. ___________150____ The scale is applicable to Chinese national standards (CNsTa4 gauge &lt; 2ΙΟχ29 ^ · fat) ----- installation-\ i / · (Please read first (Notes on the back & write this page) &gt; 'Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 45 9 072 V. Description of the invention (/ Shi Λ, maintained at 160 ° C for 30 minutes, -40 The temperature was maintained at 30 ° C for 30 minutes, and the electrical connection state of the joint was investigated after repeating this thermal cycle for 1,000 times. (6) Limiting current test Using a DC stabilization power supply device, the voltage was gradually increased while the current was passed between the two electrodes. Investigate the current at the limit of the voltage-current straight line. Example 58 (A) Production of substrate particles Except that the conditions for suspension polymerization were changed, an ethylene styrene polymer having an average particle release of 50 / zm 'standard deviation of 0.53 gm and a CV of 1.06% was produced in the same manner as in Example 57. (B) Preparation of conductive fine particles by forming a conductive metal layer Next, the substrate particles were subjected to a pretreatment in the same manner as in Example 57 to form a nickel plating layer of O. Mym on the substrate particles. Next, using the same plating device as in Example 57, the substrate particles having been subjected to the pretreatment were immersed in a plating bath containing gold potassium cyanide to give a plating treatment, thereby forming a conductive metal layer having a thickness of 2 μm. Fabricated conductive fine particles. (C) The placement of conductive fine particles on the 1C wafer and the connection and fixing of the 1C wafer on the substrate were carried out in the same manner as in Example 57. Evaluation In the same manner as in Example 57, the characteristics of the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was connected and fixed were evaluated by the following evaluation tests. The results are shown in Table 12. ---------- 151 ____ &amp; Zhang scale is applicable to the Chinese National Cricket (CNS) Λ4 is now (210x497) {(Please read the note on the back before writing this page)

經濟部中央標準扃貝工消费合作社印製 4 5 9072 五、發明説明 實施例59 (A) 藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 使用和實施例57同樣的基材粒子’進行無電解鍍鎳 。再使用和實施例57同樣的鍍敷裝置、鍍浴，而製作出形 成有厚5/^m的鎳構成的導電金屬層之粒子後，將該粒子 浸漬於酸性光澤浴構成的鍍銲鍚浴(奧野製藥工業社製脫普 提那MS)後施以電鍍處理，藉由於其周圍形成厚10ym的 錫63重量％/鉛37重量％的共晶銲錫層構成之低融點金屬 層，而製作出導電性微粒子。 (B) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 ，和實施例57同樣地，對1C晶片進行導電性微粒子的 載置後’藉由23〇t：、10秒鏤的加熱以於1C晶片(晶圖)的 電極部上將導電性微粒子連接固定，並將1C晶片·(晶圓)裁 切成晶片尺寸。 之後，和實施例57同樣地進行對基板之1C晶片的連 接固定。 評價 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評價 試驗以評價其特性。結果顯示於表12中》 實施例60 (A)基材粒子的製造 _ __-______ ISO______________________ 本紙浪尺度適用中國國家標準（CNS &gt; /\4规格（210X297公ϋ &quot; (請先閱讀背面之注意事項再參总本頁) -* 辟， A 5 9 0 T 2 A7 B7 五、發明説明（/ .p) 首先，使用懸浮聚合法以使苯乙烯和甲基丙烯氧基三 乙氧基矽烷(重量比6對4)共聚合後，令烷氧矽烷基彼此進 行加水分解反應以架橋，實施濕式分級以製造出基材粒子 «該基材粒子係平均粒徑、標準偏差0.79#ηι、CV 値 0.83%。 (Β)藉由形成導電金屬層及低融點金屬層以製作導電性微粒 子 和實施例57同樣地，進行基材粒子的前處理以形成' ，鎳厚2#m的導電金屬層後，再和實施例3同樣地形成 10#m厚之共晶銲錫層構成之低融點金屬層，而製作出導 電性微粒子。 (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例57同樣地，對1C晶片進行導電住微粒子的 載置後，藉由210°C、1分的加熱以於1C晶片(晶圓)的電 極部上將導電性微粒子連接固定，並將1C晶片(晶圓)裁切 成晶片尺寸。 經濟部中央標準局貝工消费合作社印裂 ----^-- \/ (請先閲讀背面之注意事項再填寫本頁) 之後，和實施例57同樣地進行對基板之1C晶片的連 接固定。 評倌 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板’進行以下般的評價 試驗以評價其特性。結果顯示於表12中。 實施例61 __—_L53_______________ I紙用國家標準（CNS ) (2丨OX 297公郑） 經濟部中央標準局貝工消費合作社印製 ^45 9 0 72 a7 ____^ 五、發明説明（/e I) (A) 基材粒子的製作 藉懸浮聚合法以於二乙烯苯聚合物中均一地混入10 重量％的氧化鈦鬚而製造出聚合物後，實施濕式分級以製 造出基材粒子。該基材粒子係平均粒徑103/zm、標準偏差 1.34/im、CV 値 1.3% 〇 (B) 藉由形成導電金屬層及低融點金屬層以製作導電性微粒 子 和實施例60同樣地，藉由形成2/zm的鍍鎳層構成之 導電金屬層及l〇#m的鍍共晶銲錫層構成之低融點金屬層 以製作導電性微粒子。 (C) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 .和實施例4同樣地進行對1C晶片之導電性微粒子的 載置及對基板之1C晶片的連接固定。 評僭 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之坡璃環氧基板，進行以下般的評價 試驗以評價其特性。結果顯示於表12中。 實施例62 (A) 基材粒子的製造 使用實施例57所製造出之基材粒子。 (B) 藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 和實施例57同樣地，進行基材粒子的前處理以形成 _154__ *紙張尺度適用中國國家榡準（CNS )八4现枋（2!0X 297公犮） I——裝-- \t/- (請先閱讀背面之注意事項再續，¾本頁) 訂 經濟部中央摞隼局？，消f合作社印製 459072 A7 _______B7_ 五、發明説明（/仁1) 厚的鎳構成的導電金屬層。 使用和實施例57同樣的鍍敷裝置，將形成有導電金 屬層之基材粒子浸漬於含焦磷酸錫、碘化銀之鍍浴中施以 電鍍處理，藉由於其周圔形成厚12#m的錫96.5重量％/銀 3.5重量％的銲錫層構成之低融點金屬層，而製作出導電性 微粒子。 (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例57同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定》 評僭 和實施例57同樣地，對於基材粒子、導電性微粒子 及達接固定有1C晶片之玻璃環氧基板，進行以下般的評價 試驗以評價其特性。結果顯示於表12中》 實施例63 (Α)基材粒子的製造 和實施例57同樣地製造出基材粒子。 (Β)藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 和實施例57同樣地，進行基材粒子的前處理以形成 鎳厚之導電金屬層。 使用和實施例57同樣的鍍敷裝置，將形成有導電金 屬層之基材粒子浸漬於含間磺酸及間磺酸鉍之鍍浴中施以 電鍍處理，藉由於其周圍形成厚10 的錫92.5重量％/鉍 -----—. -__— 155_____ 浪尺度適用中國國家標準（CNS ) Λ4^栝（10X 297公^ ——~* ---------t.— (諳先閲讀背面之iif項再#¾本頁} 訂 坪 經濟部中央標準扃負工消费合作社印製 9 0 72 at ____B7 五、發明説明（//¾) 7·5重量％的共晶銲錫層構成之低融點金屬層，而製作出導 電性微粒子。 (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例4同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定。 評價 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評價 試驗以評價其特性。結果顯示於表12中。 實施例64 (A) 基材粒子的製造 .和實施例57同樣地製造出基材粒子。 (B) 藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 和實施例57同樣地，進行基材粒子的前處理，接著 ，使用和實施例57同樣的鍍敷裝置，對完成前處理的基材 粒子施以電鍍處理，以形成銅厚5#m之導電金屬層。 使用和實施例57同樣的鍍敷裝置，將形成有導電金 屬層之基材粒子浸漬於含間磺酸鉍之鍍浴中施以電鍍處理 ，藉由於其周圍形成厚1/zm的鉍構成之低融點金屬層， 再使用含焦磷酸錫、碘化銀之鍍浴施以電鍍處理，以於鉍 構成的低融點金屬層上形成錫96,5重量％/銀3.5重量％所 構成之1〇#ηι的共晶銲錫層所構成之低融點金屬層，藉此 _156_____ 本紙張尺度適用中國國家標準（CNS ) Λ4说格（2丨0'〆297公筇） ---------1------ΐτ-----1^. (請先M讀背面之注意事項再胡為本頁) 、 459072 經濟部中央標牟局負工消f合作社印製 A7 137 五、發明説明（/.4) 以製作出導電性微粒子。 (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例60同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定。 評僭 . 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評儐 試驗以評價其特性。結果顯示於表12中。 實施例65 (A) 基材粒子的製造 藉由懸浮聚合法將二乙烯苯聚合後，實施濕式分級以 製造出基材粒子。該基材粒子係平均粒徑300/zm、標準偏 差 2_90#m、CV 値 0.97%。 (B) 藉由形成導電金屬層及低融點金屬層以製作出 粒子 接著，作爲這些基材粒子的前處理，係對上述基材粒 子施以無電解鑛鎳，以於表面形成〇.3#m的鍍鎳層β ^ 接著，使用和實施例57同樣的鍍敷裝置’將完成削 處理的基材粒子浸漬於含氯化鎳、硫酸鎳、硼酸之 施以電鍍處理，以形成鎳厚30/zm之導電金屬層。 接著，對形成有上述導電金屬層之基材粒手施以=鑛 處理，以形成25/zm之錫63重量。/。/鉛37重量。的共曰曰驛 錫所構成之低融點金屬層，藉此以製作出導電性微粒子。 157 -----.----种衣------ΐτ------^ }. .&gt; (諳先聞讀背面之注意事項再#-爲本頁) d氏浪尺度適用中國國家標準（CNS ) Λ4規招（210乂2们公筇） 經濟部中央標準局負H;消费合作社印製 4 S 9 Ο 7 2 A7 _____B7 五、發明説明αβ) (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例4同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定。 評價 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評價 試驗以評價其特性β結果顯示於表12中。 實施例66 (Α)基材粒子的製造 藉由懸浮聚合法將二乙烯苯聚合後，實施濕式分級以 製造出基材粒子。該基材粒子係平均粒徑650#m、標準偏 差 4.88#m、CV 値 0.750/。。 (B) 藉由彤成導電金屬層及低融點金屬層以製作出導電性微 粒子 接著，作爲這些基材粒子的前處理，係對上述基材粒 子施以無電解鍍鎳，以於表面形成0.3# m的鍍鎳層。 接著，使用和實施例57同樣的鍍敷裝置，將完成前 處理的基材粒子浸漬於含氯化鎳、硫酸鎳、硼酸之鍍浴中 施以電鍍處理，以形成鎳厚之導電金屬層。 接著，對形成有上述導電金屬層之基材粒子施以電鍍 處理，以形成50#ηι之錫63重量％/鉛37重量％的共晶銲 錫所構成之低融點金屬層，藉此以製作出導電性微粒子。 (C) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 _123-__ 本紙張尺度適用十國國家標準（CNS ) Λ4規格（210Χ 29?公郑） (請先閲讀背面之注意事項再^本頁) .裝- 丁 -0 腺 459072 A7 B7 經濟部中央榡準局員工消筇合作.社印說 五、發明説明（比ϋ 連接固定 和實施例60同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定。 評價 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評債 試驗以評價其特性。結果顯示於表12中。 實施例67 (Α)基材粒子的製造 使用和實施例57同樣的基材粒子。 (Β)藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 .接著，和實施例57同樣地，藉無電解鍍敷以進行基 材粒子的前處理，而形成厚0.15μιη的無電解鍍錬層。接 著，將完成前處理的基材粒子藉由和實施例8相同的電鍍 ，以形成厚Sym之銅構成的金屬層’於其周圍藉由電鍍 以形成厚l/i.m的鍍鎳層β接著，和實施例6同樣地於其 周圍形成厚10/ζηι之錫96.5重量％/銀3.5重量％的銲錫構 成之低融點金屬層，藉此以製作出導電性微粒子。 (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例60同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定β 評僭 ^紙張尺度適用中國國家標率（CNS ) 将（210Χ297,&gt;&gt;1ΓΤ (請先間讀背面之注意事項再填哀本頁) 訂 Α7 B7 經濟部中央標準局员工消贤合作社印製 459072 i、發明説明 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評價 試驗以評價其特性。結果顯示於表12中。 實施例68 (Α)基材粒子的製造 使用和實施例57同樣的基材粒子。 (Β)藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 接著，和實施例57同樣地，藉無電解鍍敷以進行基 材粒子的前處理，而形成厚的無電解鑛鎳層。接 著，將完成前處理的基材粒子藉由和實施例2相同的電鍍 ’以形成厚8#m之金構成的導電金屬層，藉此以製作出 導電性微粒子》 (C) 對1C晶片之導電性微粒子的載置 使用和實施例57同樣的球裝載器，於1C晶片的電極 上載置導電性微粒子，接著，藉由接合機以將導電性微粒 子於30CTC下，一面施加超音波一面加熱壓接於電極部。 (D) 對基板之1C晶片的連接固定 將連接固定有導電性微粒子之1C晶片和實施例57同 樣地連接固定於玻璃環氧基板。 評倌 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行以下般的評儐 試驗以評價其特性。結果顯示於表12中》 (锖先Μ讀背面之注$項再痕寫本頁)Printed by the Central Standard of the Ministry of Economic Affairs, Coconut Consumer Cooperative, Ltd. 4 5 9072 V. Description of Invention Example 59 (A) Conductive particles are formed by forming a conductive metal layer and a low melting point metal layer. The material particles are subjected to electroless nickel plating. Then, the same plating device and plating bath as in Example 57 were used to produce particles having a conductive metal layer made of nickel having a thickness of 5 / ^ m, and the particles were immersed in a plating bath made of an acidic gloss bath. (Putina MS manufactured by Okuno Pharmaceutical Co., Ltd.) and then subjected to electroplating treatment, and a low-melting-point metal layer composed of a 63-wt% tin / 37-wt% eutectic solder layer having a thickness of 10 μm was formed around the periphery. Out of conductive fine particles. (B) The conductive fine particles of the 1C wafer are mounted and the 1C wafer of the substrate is connected and fixed. In the same manner as in Example 57, the conductive fine particles of the 1C wafer are mounted. In the second-second heating, conductive particles are connected and fixed to the electrode portion of the 1C wafer (crystal pattern), and the 1C wafer (wafer) is cut to a wafer size. Thereafter, in the same manner as in Example 57, the 1C wafer of the substrate was connected and fixed. Evaluation In the same manner as in Example 57, the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was connected and fixed were subjected to the following evaluation tests to evaluate the characteristics. The results are shown in Table 12. "Example 60 (A) Manufacture of substrate particles _ __-______ ISO______________________ This paper wave size is applicable to Chinese national standards (CNS &gt; / \ 4 specifications (210X297) &quot; (Please read the back Please refer to the general page for more details)-*, A 5 9 0 T 2 A7 B7 V. Description of the invention (/.p) First, the suspension polymerization method is used to make styrene and methacryloxytriethoxysilane (Weight ratio 6 to 4) After copolymerization, the alkoxysilyl groups are subjected to a hydrolytic decomposition reaction to bridge each other, and wet classification is performed to produce substrate particles. The average particle diameter of the substrate particles, standard deviation 0.79 # η, CV 値 0.83%. (B) Conductive fine particles were formed by forming a conductive metal layer and a low melting point metal layer. In the same manner as in Example 57, the substrate particles were pretreated to form a conductive layer having a thickness of 2 # m and nickel. After the metal layer, a low-melting-point metal layer composed of a 10 # m thick eutectic solder layer was formed in the same manner as in Example 3 to produce conductive fine particles. (C) Placement of conductive fine particles on a 1C wafer and The connection and fixing of the 1C wafer of the substrate was the same as in Example 57. After placing conductive particles on the 1C wafer, the conductive particles were connected and fixed to the electrode portion of the 1C wafer (wafer) by heating at 210 ° C for 1 minute, and the 1C wafer (wafer) was cut. Cut to chip size. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative Co., Ltd .---- ^-\ / (please read the precautions on the back before filling this page), and then perform the same operations as in Example 57. The 1C chip was connected and fixed. As in Example 57, the following evaluation tests were performed on the substrate particles, conductive fine particles, and glass epoxy substrate to which the 1C chip was fixed to evaluate the characteristics. The results are shown in the table. 12. Example 61 __—_ L53_______________ I National Standard for Paper (CNS) (2 丨 OX 297 Gongzheng) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 45 9 0 72 a7 ____ ^ 5. Description of the invention (/ e I) (A) Preparation of substrate particles After suspension polymerization is used to uniformly mix 10% by weight of titanium oxide whisker in a divinylbenzene polymer to produce a polymer, wet classification is performed to produce substrate particles. The average particle size of this substrate 103 / zm, standard deviation 1.34 / im, CV 値 1.3% 〇 (B) Conductive fine particles were formed by forming a conductive metal layer and a low melting point metal layer as in Example 60, and a 2 / zm plating was formed. A conductive metal layer made of a nickel layer and a low melting point metal layer made of a 10 # m eutectic solder layer are used to make conductive particles. (C) Placement of conductive particles on a 1C wafer and 1C wafer on a substrate The connection and fixing were performed in the same manner as in Example 4. The conductive fine particles of the 1C wafer were placed and the 1C wafer of the substrate was connected and fixed. Evaluation In the same manner as in Example 57, the substrate particles, the conductive fine particles, and the sloped epoxy substrate to which the 1C wafer was connected and fixed were subjected to the following evaluation tests to evaluate the characteristics. The results are shown in Table 12. Example 62 (A) Production of substrate particles The substrate particles produced in Example 57 were used. (B) Conductive particles were formed by forming a conductive metal layer and a low-melting point metal layer. In the same manner as in Example 57, the substrate particles were pretreated to form _154__ * The paper size is applicable to China National Standard (CNS) August 4 (2! 0X 297 public) I——install-\ t /-(Please read the precautions on the back before continuing, this page) Order the Central Bureau of the Ministry of Economic Affairs? Printed by the Consumer Cooperative 459072 A7 _______B7_ 5. Description of the Invention (/ Ren 1) A conductive metal layer made of thick nickel. Using the same plating device as in Example 57, the substrate particles on which the conductive metal layer was formed were immersed in a plating bath containing tin pyrophosphate and silver iodide, and subjected to electroplating treatment, and a tin thickness of 12 # m was formed due to the circumference A low melting point metal layer composed of a solder layer of 96.5% by weight / 3.5% by weight of silver, to produce conductive fine particles. (C) Mounting of conductive fine particles on a 1C wafer and connection and fixing of the 1C wafer on the substrate In the same manner as in Example 57, mounting of conductive fine particles on the 1C wafer and connection and fixing of the 1C wafer on the substrate were performed. The evaluation was performed in the same manner as in Example 57 with respect to the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was fixed. The following evaluation tests were performed to evaluate the characteristics. The results are shown in Table 12. "Example 63 (A) Production of base material particles) Substrate particles were produced in the same manner as in Example 57. (B) The conductive metal layer and the low-melting-point metal layer are formed to produce conductive microparticles. In the same manner as in Example 57, the substrate particles were pretreated to form a nickel-thick conductive metal layer. Using the same plating device as in Example 57, the substrate particles on which the conductive metal layer was formed were immersed in a plating bath containing m-sulfonic acid and bismuth m-sulfonic acid, and subjected to electroplating, so that a thickness of 10 was formed around the tin. 92.5% by weight / bismuth -------. -__— 155_____ The wave scale is applicable to the Chinese National Standard (CNS) Λ4 ^ 栝 (10X 297mm ^ ---- ~ * --------- t.— (阅读 Read the iif item on the back before # ¾This page} Central Standard of the Ministry of Economics, printed by the Consumers ’Cooperative, 9 0 72 at ____B7 V. Description of the invention (// ¾) 7.5% by weight eutectic solder layer (C) Placement of conductive fine particles on a 1C wafer and connection and fixation of a 1C wafer on a substrate The same as in Example 4, the conductivity of the 1C wafer is performed. Mounting of fine particles and connection and fixation to the 1C wafer of the substrate. Evaluation was performed in the same manner as in Example 57. For the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was connected and fixed, the following evaluation test was performed to: The characteristics were evaluated. The results are shown in Table 12. Example 64 (A) The substrate particles were produced in the same manner as in Example 57. (B) A conductive metal layer and a low melting point metal layer were formed to produce conductive fine particles. The substrate particles were pretreated in the same manner as in Example 57. Next, using the same plating device as in Example 57, the substrate particles subjected to the pre-treatment were subjected to electroplating treatment to form a conductive metal layer having a copper thickness of 5 # m. Using the same plating device as in Example 57, The substrate particles with the conductive metal layer formed are immersed in a plating bath containing bismuth methanesulfonate and subjected to electroplating treatment. A low melting point metal layer composed of bismuth with a thickness of 1 / zm is formed around it, and then tin pyrophosphate is used. 5. The silver iodide plating bath is subjected to electroplating to form a low melting point composed of a 10 # ηι eutectic solder layer composed of tin 96,5 wt% / silver 3.5 wt% on a low melting point metal layer composed of bismuth. Point the metal layer to _156_____ This paper size applies the Chinese National Standard (CNS) Λ4 grid (2 丨 0'〆297mm 筇) --------- 1 ------ ΐτ-- --- 1 ^. (Please read the precautions on the back before making this page), 459072 The Ministry of Economic Affairs, Central Bureau of Standards, Work and Work f A7 137 printed by Sakusha Co., Ltd. 5. Description of the invention (/.4) to produce conductive fine particles. (C) Placement of conductive fine particles on a 1C wafer and connection and fixing of a 1C wafer on a substrate are the same as in Example 60. The conductive fine particles of the 1C wafer were mounted, and the 1C wafer of the substrate was connected and fixed. Comment. As in Example 57, the substrate particles, the conductive fine particles, and the glass epoxy to which the 1C wafer was fixed were connected. The substrate was subjected to the following evaluation tests to evaluate its characteristics. The results are shown in Table 12. Example 65 (A) Production of substrate particles After divinylbenzene was polymerized by a suspension polymerization method, wet classification was performed to produce substrate particles. The average particle size of the substrate particles was 300 / zm, the standard deviation was 2_90 # m, and the CV was 0.97%. (B) Particles are formed by forming a conductive metal layer and a low melting point metal layer. Then, as a pretreatment of these substrate particles, electroless nickel is applied to the substrate particles to form 0.3 on the surface. #m 的 铜 锡 层 β ^ Next, using the same plating device as in Example 57, the substrate particles having been subjected to the shaving treatment were immersed in nickel chloride, nickel sulfate, and boric acid, and subjected to electroplating treatment to form a nickel thickness. 30 / zm conductive metal layer. Next, the substrate grains on which the above-mentioned conductive metal layer was formed were manually subjected to a ore treatment to form a weight of tin 63 of 25 / zm. /. / Lead 37 weight. It is said that the low melting point metal layer composed of tin is used to produce conductive fine particles. 157 -----.---- Seeds ------ ΐτ ------ ^}.. &Gt; (谙 Read the notes on the back first and then # -this page) The wave scale is subject to the Chinese National Standard (CNS) Λ4 regulations (210 们 2). The Central Bureau of Standards of the Ministry of Economic Affairs has a negative H; printed by the consumer cooperative 4 S 9 Ο 7 2 A7 _____B7 V. Description of invention αβ) (C) Mounting of conductive fine particles on the 1C wafer and connection and fixing of the 1C wafer on the substrate In the same manner as in Example 4, mounting of conductive fine particles on the 1C wafer and connection and fixing on the 1C wafer of the substrate were performed. Evaluation In the same manner as in Example 57, the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was fixed were subjected to the following evaluation tests to evaluate the characteristics β. Table 12 shows the results. Example 66 (A) Production of substrate particles After divinylbenzene was polymerized by a suspension polymerization method, wet classification was performed to produce substrate particles. The average particle size of this substrate is 650 # m, standard deviation 4.88 # m, and CV V 0.750 /. . (B) Conductive particles are formed by forming a conductive metal layer and a low melting point metal layer. As a pretreatment of these substrate particles, the above substrate particles are subjected to electroless nickel plating to form on the surface. 0.3 # m nickel plating. Next, using the same plating apparatus as in Example 57, the substrate particles having been subjected to the pretreatment were immersed in a plating bath containing nickel chloride, nickel sulfate, and boric acid, and subjected to a plating treatment to form a conductive metal layer having a thickness of nickel. Next, the substrate particles on which the above-mentioned conductive metal layer is formed are subjected to electroplating treatment to form a low melting point metal layer composed of eutectic solder with 50% of 63% by weight tin and 37% by weight of lead. Out of conductive fine particles. (C) Placement of conductive fine particles on 1C wafer and _123 -__ on 1C wafer of substrate This paper size is applicable to Ten National Standards (CNS) Λ4 specifications (210 × 29? Gong Zheng) (Please read the back Note again on this page). Equipment-Ding-0-Gland 459072 A7 B7 Employees of the Central Bureau of quasi-Ministry of Economic Affairs, cooperation and elimination of the employees. V. Description of the invention (the connection is fixed as in Example 60. The conductive fine particles of the wafer were placed and fixed to the 1C wafer of the substrate. Evaluation was performed in the same manner as in Example 57. The substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was fixed were subjected to the following procedures. A debt test was performed to evaluate the characteristics. The results are shown in Table 12. Example 67 (A) The substrate particles were produced using the same substrate particles as in Example 57. (B) By forming a conductive metal layer and a low melting point The metal layer was used to produce conductive fine particles. Next, as in Example 57, electroless plating was used to pretreat the substrate particles to form an electroless plated layer with a thickness of 0.15 μm. Next, the pretreatment was completed. Substrate particles by The same electroplating as in Example 8 was performed to form a metal layer made of copper with a thickness of Sym 'around the periphery by electroplating to form a nickel plating layer having a thickness of 1 / im β. Next, a thickness of 10 / was formed around the same as in Example 6. ζηι is a low melting point metal layer composed of 96.5 wt% tin and 3.5 wt% silver solder to produce conductive fine particles. (C) Placement of conductive fine particles on 1C wafer and 1C wafer of substrate The connection and fixation were performed in the same manner as in Example 60. The conductive fine particles of the 1C wafer were mounted and the 1C wafer was fixed and connected to the substrate. Β Evaluation ^ The paper standard applies the Chinese National Standard (CNS). ; 1ΓΤ (please read the notes on the back first and then fill out this page) Order A7 B7 Printed by Xiaoxian Cooperative of Employees of the Central Standards Bureau of the Ministry of Economic Affairs 459072 i. The invention description is the same as in Example 57. The microparticles and the glass epoxy substrate to which the 1C wafer was fixed were subjected to the following evaluation tests to evaluate the characteristics. The results are shown in Table 12. Example 68 (A) Production and use of substrate particles The same bases as in Example 57 were used. Wood particles (B) Conductive fine particles are formed by forming a conductive metal layer and a low melting point metal layer. Then, as in Example 57, a thick electroless layer was formed by pretreatment of the substrate particles by electroless plating. Ore nickel layer. Next, the substrate particles that have undergone the pretreatment are electroplated in the same manner as in Example 2 to form a conductive metal layer composed of 8 #m thick gold, thereby producing conductive fine particles "(C) For the conductive fine particles of the 1C wafer, the same ball loader as in Example 57 was used. The conductive fine particles were placed on the electrodes of the 1C wafer. Then, the conductive fine particles were applied at 30CTC by a bonding machine, and the ultrafine particles were applied at the same time. The sonic wave is heated and crimped to the electrode portion. (D) Connection and fixation to the 1C wafer of the substrate The 1C wafer to which the conductive fine particles were connected and fixed was connected and fixed to the glass epoxy substrate in the same manner as in Example 57. Evaluation In the same manner as in Example 57, the substrate particles, conductive fine particles, and a glass epoxy substrate to which a 1C wafer was connected and fixed were subjected to the following evaluation tests to evaluate the characteristics. The results are shown in Table 12 "(I read the note on the back and write this page)

本紙張尺度適用中國國家標準（CNS )八4規松（210Χ297公处） 經濟部中央標準局员工消費合作社印賊 45 9072, A7 B7 五、發明説明（|@) 比較例32 (A)導電性微粒子 作爲導電性微粒子，係使用於平均粒徑78//m之錫 10重量％/鉛90重量％所構成之高融點銲錫粒子周圔鍍敷上 厚l〇em之錫63重量％/鉛37重量％所構成之共晶銲錫所 得出的粒子。標準偏差爲。 (Β)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例57同樣地，對1C晶片進行導電性微粒子的 載置後，藉由230°C、1〇秒的加熱以於1C晶片(晶圓)的電 極部上將導電性微粒子連接固定，並將1C晶片(晶圓)裁切 成晶片尺寸。 .之後，和實施例57同樣地進行對基板之1C晶片的連 接固定。 評僭 對於使用上述導電性微粒子以連接固定1C晶片之玻 璃環氧基板進行評價β結果，在導電性微粒子和1C晶片的 連接部會產生剝離，在熱循環試驗第450次時會形成導通 不良。 比較例33 (A) 導電性微粒子 作爲導電性微粒子，係使用於平均粒徑之銅球 上設置厚7 的鍍金層所得出者。標準偏差爲1.1 。 (B) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 本紙張尺度適用中國國家橾準（CNS ) Λ4规格（兑) ' (請先閱讀背面之注$項再填赶本頁)This paper size applies to China National Standard (CNS) 8-4 (210 × 297). Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, Printing Co., Ltd. 45 9072, A7 B7 V. Description of Invention (| @) Comparative Example 32 (A) Conductivity The fine particles are conductive fine particles, and are used in high melting point solder particles composed of tin 10% by weight / lead 90% by weight with an average particle size of 78 // m. The tin is plated with a thickness of 10em of 63% by weight / lead. Eutectic solder composed of 37% by weight of particles. The standard deviation is. (B) Placement of conductive fine particles on 1C wafer and connection and fixation of 1C wafer on the substrate In the same manner as in Example 57, after placing conductive fine particles on a 1C wafer, 230 ° C, 10 seconds The heating is performed to connect and fix conductive fine particles on the electrode portion of the 1C wafer (wafer), and the 1C wafer (wafer) is cut to a wafer size. Thereafter, the connection and fixing of the 1C wafer of the substrate was performed in the same manner as in Example 57. Evaluation As a result of evaluating β using the above-mentioned conductive fine particles to connect and fix the glass epoxy substrate of the 1C wafer, peeling occurred at the connection portion between the conductive fine particles and the 1C wafer, and a conduction failure occurred at the 450th cycle of the thermal cycle test. Comparative Example 33 (A) Conductive fine particles As conductive fine particles, a gold plating layer having a thickness of 7 was used on copper balls having an average particle diameter. The standard deviation is 1.1. (B) The placement of conductive particles on the 1C wafer and the paper size of the 1C wafer on the substrate are subject to China National Standards (CNS) Λ4 Specification (Rev.) '(Please read the note on the back before filling in this page)

、1T 經濟部中央標隼局貞工消费合作社印奴 45 90 7 之 Α7 Β7 五、發明説明（/,0) 連接固定 和實施例57同樣地，對1C晶片進行導電性微粒子的 載置後，藉由230°C、10秒的加熱以於1C晶片（晶圓)的電 極部上將導電性微粒子連接固定，並將1C晶片(晶圓)裁切 成晶片尺寸。 之後，和實施例57同樣地進行對基板之1C晶片的連 接固定。 評僭 對於使用上述導電性微粒子以連接固定1C晶片之玻 璃環氧基板進行評價。結果，在導電性微粒子和1C晶片的 連接部會產生剝離，在熱循環試驗第550次時會形成導通 不良。 比較例34 (A) 基材粒子的製造 使用實施例57所製造出之基材粒子^ (B) 藉由形成導電金屬層之導電性微粒子的製作 和實施例57同樣地，進行基材粒子的前處理，藉電 鍍以形成厚O.S^m之鍍鎳層，而製作出導電性微粒子。 (C) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 在和實施例57同樣的條件下，於1C晶片的電極部載 置導電性微粒子，並使其連接固定。 評倌 和實施例57同樣地，對於基材粒子、導電性微粒子 ------162 _______________ 本紙張尺度適用中國國家標準（CNS ) Λ4规梠（2IOX297公#) (請先閱讀背面之注意事項再填商本頁)1, 1T, Central Standards Bureau, Ministry of Economic Affairs, Zhengong Consumer Cooperative, Innu 45 90 7 Α7 Β7 V. Description of the invention (/, 0) Connection and fixation As in Example 57, after the conductive particles are placed on the 1C chip, By heating at 230 ° C for 10 seconds, the conductive particles are connected and fixed on the electrode portion of the 1C wafer (wafer), and the 1C wafer (wafer) is cut to a wafer size. Thereafter, in the same manner as in Example 57, the 1C wafer of the substrate was connected and fixed. Evaluation A glass epoxy substrate using the above-mentioned conductive fine particles to connect and fix a 1C wafer was evaluated. As a result, peeling occurred at the connection portion between the conductive fine particles and the 1C wafer, and a conduction failure occurred at the 550th time of the thermal cycle test. Comparative Example 34 (A) Production of substrate particles The substrate particles produced in Example 57 were used. (B) The production of conductive fine particles forming a conductive metal layer was performed in the same manner as in Example 57. In the pre-treatment, conductive fine particles are produced by electroplating to form a nickel-plated layer with a thickness of OS ^ m. (C) Placement of conductive fine particles on 1C wafer and connection and fixation of 1C wafer on substrate Under the same conditions as in Example 57, conductive fine particles were placed on the electrode portion of the 1C wafer and connected and fixed. The evaluation is the same as in Example 57. For the substrate particles and conductive fine particles ------ 162 _______________ This paper size applies the Chinese National Standard (CNS) Λ4 Regulations (2IOX297 公 #) (Please read the note on the back first Matters refilled on this page)

45 9 07Z A7 137 經濟部中央標擎局負工消费合作社印製 五、發明説明（/p) 及連接固定有1C晶片之玻璃環氧基板加以評價的結果，由 於加熱會使導電金屬層產生裂開，故在耐熱試驗後5〇小時 會有導通不良產生。又，在熱循環試驗第Π0次時會產生 導通不良。 比較例35 (A) 基材粒子的製造 使用實施例57所製造出之基材粒子。 (B) 藉由形成導電金屬層之導電性微粒子的製作 和實施例57同樣地，進行基材粒子的前處理，藉電 鍍以形成厚25# m之鍍鎳層’而製作出導電性微粒子。 (C) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 .在和實施例57同樣的條件下，於1C晶片的電極部載 置導電性微粒子，並使其連接固定。 評價 和實施例57同樣地’對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板加以評價的結果’雖 然耐熱試驗的結果良好’但在熱循環試驗第350次時會產 生導通不良。 比較例36 (A) 基材粒子的製造 使用實施例57所製造出之基材粒子。 (B) 藉由形成導電金屬層之導電性微粒子的製作 於基材粒子的周圍吸附錫/鈀複合鹽所構成之觸媒後’ ⑹ _ _____ (請先閱讀背面之注意事項再填寫本頁}45 9 07Z A7 137 Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives. V. Invention Description (/ p) and evaluation results of a glass epoxy substrate connected to a 1C chip. The conductive metal layer is cracked due to heating. On, 50 minutes after the heat resistance test, there will be conduction failure. In the ninth time of the thermal cycle test, a conduction failure occurred. Comparative Example 35 (A) Production of substrate particles The substrate particles produced in Example 57 were used. (B) Preparation of conductive fine particles forming a conductive metal layer In the same manner as in Example 57, the base particles were pretreated, and electroplating was performed to form a nickel-plated layer having a thickness of 25 m. Thus, conductive fine particles were produced. (C) Placement of conductive fine particles on 1C wafer and connection and fixing of 1C wafer on the substrate. Under the same conditions as in Example 57, conductive fine particles were placed on the electrode portion of the 1C wafer and connected and fixed. . The evaluation was the same as in Example 57. “The results of evaluation of the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was connected were fixed.“ Although the results of the heat resistance test were good, ”the heat cycle test occurred at the 350th time. Poor continuity. Comparative Example 36 (A) Production of substrate particles The substrate particles produced in Example 57 were used. (B) Production of conductive fine particles by forming a conductive metal layer After adsorbing a catalyst composed of tin / palladium composite salt around the substrate particles ’⑹ _ _____ (Please read the precautions on the back before filling this page}

本紙張尺度適用中國國家摞準（CNS ) Λ4规枋&lt; 2丨〇X 297公垃） 459072 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（/“/) 以硫酸水溶液進行活性化處理。於其表面，藉無電解鑛鎳 以形成厚〇.9#ηι之鎳層’而製作出導電性微粒子。 (C)# 1C晶片之導電性微粒子的載置及對基板之ic晶片的 連接固定 在和實施例57同樣的條件下，於IC晶片的電極部載 置導電性微粒子，並使其連接固定。 評僭 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板加以評價的結果，耐 熱試驗270小時後鎳層會產生龜裂，會產生導通不良。又 ，在熱循環試驗第560次時會產生導通不良。 比較例37 (A) 碁衬粒子的製造 使用和實施例57同樣的基材粒子。 (B) 藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 接著，和實施例S7同樣地’藉無電解鍍敷以進行基 材粒子的前處理，而形成厚的無電解鍍鎳層。接 著，將完成前處理的基材粒子藉由和實施例8相同的電鍍 ，以形成厚之鎳構成的導電金屬層。接著，和實施 例3同樣地於其周圍施以鍍敷以形成厚53μηι之錫63重 量％/鉛37重量％的共晶銲錫層，藉此以製作出導電性微粒 子。標準偏差爲2.3#m。 (C) 對1C晶片之導電性微粒子的載置及對基板之1C晶片的 ___ 本紙張尺度適用中國國家標隼i CNS &gt; Λ视格（2丨0X 297公筇） 聲-- SV) · (請先閱讀背面之注意事項再功，&quot;本頁) 、τ ^丨 經濟部中央標準局員工消费合作社印製 ：45 9072 五、發明説明（％乃 連接固定 和實施例3同樣地，進行對1C晶片之導電性微粒子 的載置及對基板之1C晶片的連接固定。 評價 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行評價的結果’ 雖然耐熱試驗的結果良好，但在熱循環試驗第750次時會 產生導通不良°This paper size applies to China National Standards (CNS) Λ4 Regulations &lt; 2 丨 〇X 297 public waste) 459072 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention (/ "/) Activation treatment. On its surface, electroless ore nickel is used to form a nickel layer with a thickness of 0.9 # n to produce conductive fine particles. (C) # 1C placement of conductive fine particles on the wafer and the IC on the substrate The wafers were connected and fixed under the same conditions as in Example 57. Conductive fine particles were placed on the electrode portion of the IC wafer and connected and fixed. As in Example 57, the substrate particles, conductive fine particles, and As a result of evaluation by connecting a glass epoxy substrate having a 1C chip fixed thereto, the nickel layer was cracked after 270 hours of the heat resistance test, which caused defective conduction. In addition, the conductive defect occurred at the 560th time of the thermal cycle test. Comparative Example 37 (A) The same substrate particles as in Example 57 were used for the production of the lining particles. (B) Conductive fine particles were formed by forming a conductive metal layer and a low melting point metal layer. Next, the same as in Example S7 ' Electroless plating is performed to pretreat the substrate particles to form a thick electroless nickel-plated layer. Next, the pretreated substrate particles are subjected to the same plating as in Example 8 to form a thick nickel layer. A conductive metal layer. Next, as in Example 3, plating was performed on the periphery to form a 53 μm thick tin 63% by weight / lead 37% by weight eutectic solder layer, thereby producing conductive fine particles. Standard deviation It is 2.3 # m. (C) The placement of conductive particles on the 1C wafer and the 1C wafer on the substrate ___ This paper size is applicable to the Chinese national standard i CNS &gt; Λ view (2 丨 0X 297mm) (Voice-SV) · (Please read the precautions on the back, and then work on this page), τ ^ 丨 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs: 45 9072 V. Description of the invention (% is for connection and implementation) In Example 3, the conductive fine particles of the 1C wafer were mounted and the 1C wafer of the substrate was connected and fixed. Evaluation was the same as in Example 57. The substrate particles, the conductive fine particles, and the glass to which the 1C wafer was fixed were connected. Epoxy substrate for evaluation The result of 'good results, although heat resistance test, but in the heat cycle test of 750 ° conduction failure will produce

比較例3S (A)基材粒子的製造 使用和實施例57同樣的基材粒子。 (Β)藉由形成導電金屬層及低融點金屬層以製作出導電性微 粒子 接著，和實施例57同樣地，藉無電解鍍敷以進行基 材粒子的前處理，而形成厚的無電解鍍鎳層。接 著，將完成前處理的基材粒子藉由和實施例57相同的電鍍 ，以形成厚5#m之鎳構成的導電金屬層。接著，和實施 例3同樣地於其周圍施以鍍敷以形成厚2.5 之錫63重 量％/鉛37重量％的共晶銲錫層，藉此以製作出導電性微粒 子。標準偏差爲1.7#m。 (C)對1C晶片之導電性微粒子的載置及對基板之1C晶片的 連接固定 和實施例59同樣地，進行對1C晶片之導電性微粒子 的載匱及對基板之1C晶片的連接固定。 ___ 165___ 適用中國國家標準（CNS ) Λ4规精(210X 297^&gt;# ) (請先閱讀背而之注意事項再填轉本頁) 訂 A7 45 9 072 五、發朋説明（ilj) 評價 和實施例57同樣地，對於基材粒子、導電性微粒子 及連接固定有1C晶片之玻璃環氧基板，進行評價的結果， 由於銲錫層過薄，故極限電流値係0.4安培而顯示較低値 一--一 *又在熱循環試驗第750次時會產生導通不良^ 表12 導電粒子的評便 電子電路裝置的評傻 基材粒子的 導電金屬層 剝離強度 耐熱 熱循環纖 極限電:流 雛導率 的扼^度 &amp; 雜離態 接 imm W/m . K Kg/mm2 狀態 A 實施例57 0.12 85 38 良好 餅 4 實施例57 0.12 85 38 良好 良好 4 黄施例58 0.12 23 35 良好 良好 5 實施例59 0.12 85 3S 良好 良好 4,5 實施例60 0.36 85 34 良好 良好 16 寊施例61 0.32 85 45 良好 良好 5 實施例62 0.12 85 50 良好 良好 3.8 實施例63 0Λ2 85 43 良好 良好 4.8 實施例64 0Λ2 — 良好 良好 4.5 實施例63 0.12 85 350 良好 良好 8 mm 66 0.12 85 1150 良好 良好 S 實施例67 0.12 _ 55 良好 良好 5 實施例68 0.12 23 30 良好 良好 5 ___ CNS ) ( 210 X 297^^ ) ---------:表------&quot;------- ) 、\ J (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消资合作社印製Comparative Example 3S (A) Production of substrate particles The same substrate particles as in Example 57 were used. (B) Conductive fine particles are formed by forming a conductive metal layer and a low melting point metal layer. Then, as in Example 57, a thick electroless layer was formed by pretreatment of the substrate particles by electroless plating. Nickel plating. Next, the substrate particles having been subjected to the pretreatment were subjected to the same plating as in Example 57 to form a conductive metal layer composed of 5 #m thick nickel. Next, in the same manner as in Example 3, plating was performed on the periphery to form a eutectic solder layer having a thickness of 2.5% by weight of 63% by weight / 37% by weight of lead, thereby producing conductive fine particles. The standard deviation is 1.7 # m. (C) Mounting of conductive fine particles on a 1C wafer and connection and fixing of the 1C wafer on the substrate In the same manner as in Example 59, load of conductive fine particles on the 1C wafer and connection and fixing of the 1C wafer on the substrate were performed. ___ 165___ Applicable to China National Standards (CNS) Λ4 Regulations (210X 297 ^ &gt;#) (Please read the precautions before filling in this page) Order A7 45 9 072 V. Instructions for Posting (ilj) Evaluation and Example 57 Similarly, evaluation was performed on the substrate particles, the conductive fine particles, and the glass epoxy substrate to which the 1C wafer was fixed. As the solder layer was too thin, the limiting current was 0.4 amperes and showed a low value. --- * Conductive failure will occur at the 750th time of the thermal cycle test ^ Table 12 Evaluation of conductive particles Evaluation of electronic circuit devices Peeling strength of conductive metal layer of substrate particles Heat-resistant thermal cycle fiber Limiting electricity: Current conduction The degree of rate &amp; heterogeneous state is imm W / m. K Kg / mm2 State A Example 57 0.12 85 38 Good cake 4 Example 57 0.12 85 38 Good 4 Yellow Example 58 0.12 23 35 Good 5 Example 59 0.12 85 3S Good Good 4,5 Example 60 0.36 85 34 Good Good 16 寊 Example 61 0.32 85 45 Good Good 5 Example 62 0.12 85 50 Good Good 3.8 Example 63 0Λ2 85 43 Good Good 4.8 Example 64 0Λ2 — Good Good 4.5 Example 63 0.12 85 350 Good Good 8 mm 66 0.12 85 1150 Good Good S Example 67 0.12 _ 55 Good Good 5 Example 68 0.12 23 30 Good Good 5 ___ CNS) (210 X 297 ^^) ---------: Table ------ &quot; -------), \ J (Please read the notes on the back before filling out this page) Printed by cooperatives

Claims (1)

459。1 六、4'諝專利範圍 V» 1. 一種導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的外周上面之僅鍍液可通過之多孔體； 配置於上述多孔體上面之通電用的接觸環； 中空罩，於上部中央具有開口部之圓錐台狀的罩之上端部 接合孔徑相同於開口徑之中空圓筒，該中空圖筒的上端部 係朝中空圓筒內壁側回折； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室； 將鍍液從上述開口部供給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 2. —種導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的外周上面之多孔體，係於多孔質保持體 的內側面具有僅鍍液可通過的孔徑，並貼合有厚10〜1000 /zm之板狀過濾器； 配置於上述多孔體上面之通電用的接觸環； 於上部中央具有開口部之圓錐台狀的中空罩； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室； 將鍍液從上述開口部供給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； K任义度適用中國國家標嗥（CMS ) A4規格（210Χ2Φ7公；f ) - - - -I - --- I - - I - - I - - - - - t XI n i n /—- I&quot; (請先閱讀背面之注意事項再填寫本買) 459072 A8 B8 C8 D8 六、申請專利範圍 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 ^^^^1 —F^ kt—A 1^—fl^i am ·' (請先閲讀背面之注意事項再填寫本頁) 3. 如申請專利範圍第1項之導電性微粒子之製造裝置 ’其中，多孔體係在多孔質保持體的內側面具有僅鍍液可 通過的孔徑，並貼合有厚10〜1000 Am之板狀過濾器。 4. 一種導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的上面之僅鍍液可通過的板狀多孔體； 配置於上述多孔體上面之通電用的接觸環； 於上部中央具有開口部之圓錐台狀的中空罩； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室； 將鍍液從上述開口部供給至上述處理室之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 5. —種導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的上面之僅鍍液可通過之板狀多孔體； 配置於上述多孔體上面之通電用的接觸環； 中空罩，於上部中央具有開口部之圓錐台狀的罩之上端部 接合孔徑相同於開口徑之中空圓筒，該中空圓筒的上端部 係朝中空圓筒內壁側回折； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 2 木岐張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經·满部智总財工消費合作社印製 45 9 0 72 Ss C8 D8 六、申請專利範圍 體和接觸環之可旋轉的處理室； 將鍍液從上述開口部供給至上述處理室之供給管： 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 6. 如申請專利範圍第4或第5項之導電性微粒子之製 造裝置，其中，多孔體係在板狀多孔質保持體的上面具有 僅鍍液可通過的孔徑，並貼合有厚1〇〜lOOOym之板狀過 濾器。 7. —種導電性微粒子之製造方法，係藉由鍍敷步驟以 在微粒子的表面形成電鍍層之導電性微粒子之製造方法， 其特徵在於： 爲了將上述鍍敷步驟中所生成的微粒子凝集塊分散、粉 碎、單粒子化，係包含用以賦予擇自剪切力、衝擊力、及 壓力降低所構成群中之至少1種的步驟。 8. —種導電性微粒子製造方法，係於配設有陽極與陰 極之鍍浴中，藉由基於離心力之令微粒子撞擊陰極的鍍敷 步驟，以於上述微粒子表面形成電鍍層，其特徵在於： 爲了將上述鍍敷步驟中所生成的微粒子凝集塊分散、粉 碎、單粒子化，係包含用以賦予擇自剪切力、衝擊力、及 壓力降低所構成群中之至少1種的步驟。 9. 一種導電性微粒子之製造方法，係使用具有： 固定於垂直驅動軸的上端部之圓盤狀底板；配置於上述底 板的外周上面之僅鍍液可通過之多孔體；配置於上述多孔 3 - - -- - - - - -- - - - - I II —^^1 - ----J I .......... (請先閱讀背面之注意寧項再填寫本頁) 太咪乐尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） ABCD 45 9073 六、申請專利範圍 裝ΪΙ* 訂 (請先閲讀背面之注意事項再填寫本頁) 體上面之通電用的接觸環；中空罩，於上部中央具有開口 部之圓錐台狀的罩之上端部接合孔徑相同於開口徑之中空 圓筒’該中空圓筒的上端部係朝中空圓筒內壁側回折；形 成於上述中空罩的外周部與前述底板間之夾住上述多孔體 和接觸環之可旋轉的處理室；將鍍液從上述開口部供給至 上述處理室之供給管；用於接收從上述多孔體的孔飛散出 的鍍液之容器；用以排出儲留於上述容器中的鍍液之排出 管；從上述開口部***之接觸鍍液用的電極； 之電鍍裝置；而藉由將施加前處理後的微粒子置入上述處 理室 &gt; 一面在上述處理室內供給鍍液，同時將上述處理室 以其旋轉軸爲中心而旋轉之鍍敷步驟，以於前述微粒子的 表面形成電鍍層，其特徵在於： 係包含單粒子化步驟，爲了將上述鍍敷步驟中所生成的 微粒子凝集塊分散、粉碎、單粒子化，而賦予擇自剪切力 .、衝擊力、及壓力降低所構成群中之至少1種。 10.. —種導電性微粒子之製造裝置，係具有： 經-部智^时'';-^只工&quot;费合作社卬實 固定於垂直驅動軸的上端部之圓盤狀底板；配置於上述 底板的外周上面之僅鑛液可通過之多孔體；配置於上述多 孔體上面之通電用的接觸環；中空罩，於上部中央具有開 口部之圓錐台狀的罩之上端部接合孔徑相同於開口徑之中 空圓筒’該中空圓筒的上端部係朝中空圓筒內壁側回折； 形成於上述中空罩的外周部與前述底板間之夾住上述多孔 體和接觸環之可旋轉的處理室；將鍍液從上述開口部供給 至上述處理室之供給管；用於接收從上述多孔體的孔飛散 4 本.¾張尺度適用中國國家標準（〔NS ) A4規格（210X297公釐） Α8 Β8 C8 D8 459072 六、申請專利範圍 出的鍍液之容器；用以排出儲留於上述容器中的鍍液之排 出管；從上述開口部***之接觸鍍液用的電極；以及爲了 將上述鍍敷步驟中所生成的微粒子凝集塊分散、粉碎、單 粒子化，而賦予擇自剪切力、衝擊力、及壓力降低所構成 群中之至少1種的粉碎裝置。 11. 一種導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板； 配置於上述底板的外周上面之僅鍍液可通過之多孔體； 配置於上述多孔體上面之通電用的接觸環； 於上部中央具有開口部之中空罩； 形成於上述中空罩的外周部與底板間之夾住上述多孔體與 接觸環之可旋轉的鍍槽； 於上述鍍槽內，藉由僅鍍液可通過的隔板所隔出之包含上 述接觸環的內側面之處理室； 將鍍液從上述開口部供給至上述鍍槽之供給管； 用於接收從上述多孔體的孔飛散出的鍍液之容器； 用以排出儲留於上述容器中的鍍液之排出管； 從上述開口部***之接觸鍍液用的電極。 12. —種導電性微粒子之製造方法，係藉由鍍敷步驟以 於微粒子的表面形成鍍層之導電性微粒子之製造方法，其 特徵在於： 上述鍍敷步驟之進行所使用之導電性微粒子製造裝置， 係具有：於側面具陰極並具有可使鍍液通過而排出的過濾 部之可旋轉的處理室，以及設置成不與上述處理室中的陰 5 本纸张I度適用中國國家標箪（CNS ^格（2^Γχ 297公聲） ^1— HJ ...... I - ___ __ .—1H I. I - » - I ^^^1 ^^^1 ^^—11 (請先閱讀背面之注意事項再填寫本頁) 經濟部智.¾財4- 55-M工消费合作社印製 r45 907¾ 六、申請專利範圍 極接觸之陽極；上述鍍敷步驟，係藉由反覆上述處理室的 旋轉與停止以進行之，係包含：在上述微粒子接觸上述陰 極的狀態下進行通電以於上述微粒子的表面形成鍍層之通 電步驟，以及將上述微粒子攪拌之攪拌步驟。 13.如申請專利範圍第12項之導電性微粒子之製造方 法，其中，所使用之導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圚盤狀底板；配置於上述底 板的上面之僅鍍液可通過的板狀多孔體；配置於上述多孔 體外周上面之通電用的接觸環；於上部中央具有開口部之 圓錐台狀的中空罩；形成於上述中空罩的外周部與前述底 板間之夾住上述多孔體和接觸環之可旋轉的處理室；將鍍 液從上述開口部供給至上述處理室之供給管；用於接收從 上述多孔體的孔飛散出的鑛液之容器；用以排出儲留於上 述容器中的鑛液之排出管；從上述開口部***之接觸鍍液 用的電極。 14·一種導電性微粒子之製造方法，係藉由鍍敷步驟以 於微粒子的表面形成鍍層之導電性微粒子製造方法，其特 徵在於： 上述鍍敷步驟之進行所使用之導電性微粒子製造裝置， 係具有：於側面具陰極並具有可使鍍液通過而排出的過爐 部之可旋轉的處理室，以及設置成不與上述處理室中的陰 極接觸之陽極；基於上述處理室的旋轉之離心力的效果以 使微粒子接觸上述陰極，而在此狀態下進行通電以於上述 微粒子的表面形成鍍層，之後停止上述處理室的旋轉及通 6 夂紙浪尺度適用中國國家標隼（CNS ) A4現格（210X 297公釐） * -= -----II —^1 ^—^1 ^—^1 -=·15-, 1 __ - —^1 ι^ϋ 穿-5 (請先閱讀背面之注意事項再填寫本頁) 459072 A8 B8 C8 D8 六、申請專利範圍 電，再反覆進行上述處理室的旋轉及停止；上述微粒子和 上述鍍液的比重差爲〇.〇4〜22.00。 15. 如申請專利範圍第14項之導電性微粒子之製造方 法，其中，所使用之導電性微粒子之製造裝置，係具有： 固定於垂直驅動軸的上端部之圓盤狀底板；配置於上述底 板的上面之僅鍍液可通過的板狀多孔體；配置於上述多孔 體外周上面之通電用的接觸環；於上部中央具有開口部之 圓錐台狀的中空罩；形成於上述中空罩的外周部與前述底 板間之夾住上述多孔體和接觸環之可旋轉的處理室；將鍍 液從上述開口部供給至上述處理室之供給管；用於接收從 上述多孔體的孔飛散出的鍍液之容器；用以排出儲留於上 述容器中的鍍液之排出管；從上述開口部***之接觸鍍液 用的電極。 16. —種導電性微粒子之製造方法，係藉由鍍敷步驟以 於微粒子的表面形成鍍層之導電性微粒子製造方法，其特 徵在於： 上述鍍敷步驟之進行所使用之導電性微粒子製造裝置， 係具有：於側面具陰極並具有可使鍍液通過而排出的過濾 部之可旋轉的處理室，以及設置成不與上述處理室中的陰 極接觸之陽極；基於上述處理室的旋轉之離心力的效果以 使微粒子接觸上述陰極，而在此狀態下進行通電以於上述 微粒子的表面彤成鍍層，之後停止上述處理室的旋轉及通 電’再反覆進行上述處理室的旋轉及停止；上述處理室的 旋轉是在離心效果爲2,0-40.0的旋轉數下進行，上述通電 7 本也4尺度適用中國國家裙準（) A4規格（公釐） I i . ί 装 , 訂 {請先閱讀背面之注意事項再填寫本頁) 經濟部智总財&quot;^ai工&quot;费合作社印奴 45 9072 A8 BS C8 D8 六、申請專利範圍 是在上述處理室的旋轉開始〇·5〜10秒後開始，上述處理室 的停止時間是〇〜10秒。 I I I! I t 1 - j^i ^^1 -I— (請先閱讀背面之注意事項再填寫本頁} 17. —種導電性微粒子之製造方法，係藉由鍍敷步驟以 於微粒子的表面形成鍍層之導電性微粒子製造方法，其特 徵在於： 上述鍍敷步驟之進行所使用之導電性微粒子製造裝置， 係具有：於側面具陰極並具有可使鍍液通過而排出的過濾 部之可旋轉的處理室，以及設置成不與上述處理室中的陰 極接觸之陽極；基於上述處理室的旋轉之離心力的效果以 使微粒子接觸上述陰極，而在此狀態下進行通電以於上述 微粒子的表面形成鍍層，之後停止上述處理室的旋轉及通 電，再反覆進行上述處理室的旋轉及停止；上述處理室的 旋轉是在離心效果爲2.0〜40.0的旋轉數下進行，上述通電 ，在微粒子的表面所形成的電鍍層膜厚形成既定値前，是 在處理室的旋轉開始3〜10秒後開始，在微粒子的表面所形 成的電鍍層膜厚形成既定値後，是在處理室的旋轉開始 0.5〜10秒後、即比在微粒子的表面所形成的電鍍層膜厚形 成既定値前的通電時間短的時間內開始。 經濟部智龙时.4.8?肖工消費合作杜印製 18. 如申請專利範圍第16或第Η項之導電性微粒子 之製造方法，其中，所使用之導電性微粒子之製造裝置， 係具有：固定於垂直驅動軸的上端部之圓盤狀底板：配置 於上述底板的上面之僅鍍液可通過的板狀多孔體；配置於 上述多孔體外周上面之通電用的接觸環；於上部中央具有 開口部之圓錐台狀的中空罩；形成於上述中空罩的外周部 S 表故浪又度適用中國國家標準（ΓΝ5 ) Α4現格（210X297公釐） 45 9072 A8 B8 C8 D8 經濟部智^时4局3工消#合作钍印製 六、申請專利範圍 與前述底板間之夾住上述多孔體和接觸環之可旋轉的處理 室；將鍍液從上述開口部供給至上述處理室之供給管：用 於接收從上述多孔體的孔飛散出的鍍液之容器；用以排出 儲留於上述容器中的鍍液之排出管；從上述開口部***之 接觸鎪液用的電極。 19. 一種導電性微粒子，係將外表面電鍍之導電性微粒 子，其特徵在於：粒徑0.5〜5000/zm，長寬比未滿1.5，變 動係數50%以下。 20. 如申請專利範圍第19項之導電性微粒子，其中， 係使用於外周部具陰極、具有設置成與前述陰極不接觸的 陽極之可旋轉的鍍敷裝置以進行電鍍。 21. 如申請專利範圍第19或第20項之導電性微粒子 ，其中，電鍍係使用金、鉑或鈀。 22. 如申請專利範圍第19或第20項之導電性微粒子 ，其中，電鍍層的厚爲0.2〜3 。 23. —種各向異性導電接著劑，係含有申請專利範圍第 I9或第2〇項之導電性微粒子。 24. 如申請專利範圍第23項之各向異性導電接著劑， 其中，導電性微粒子係配置於特定的位置。 25. —種導電連接構造體'，係藉由申請專利範圍第23 或第24項之各向異性導電接著劑以連接之。 26. —種電子電路裝置，係將電子電路元件的電極部和 電子電路基板的電極部電連接所構成的電子電路裝置，其 特徵在於： 9 ^^^1 ^^^^1 ^^^^1 I- I m m^i i J-i -- ·ί- ι n ^^^^1 一 Ψ (請先閱讀背面之注意事項再填寫本頁) 表紙張尺度適用中國國家標率（CNS ) Λ4現格（2l〇X297公釐) 經-部智总时&quot;^:玲工消#合作社印災 45BQ72 A8 B8 C8 ---- TV、申清專利範圍 i述連接係使用於球狀彈性基材粒子的表面設有導電金 屬層之積層導電性微粒子以進行，於上述電子電路元件的 電:^^和上述電子電路基板的電極部之連接部上，對各連 接部係藉由複數個上述積層導電性微粒子以電連接。 27·一種電子電路裝置，係將電子電路元件的電極部和 電子·電:路基板的電極部電連接所構成的電子電路裝置，其 特徵在於： 上述連接係使用於球狀彈性基材粒子的表面設有導電金 屬層'又於上述導電性金屬層的表面設有低融點金屬層所 構成之重積層導電性微粒子以進行，於上述電子電路元件 的電極部和上述電子電路基板的電極部之連接部，對各連 接部係藉由複數個上述積層導電性微粒子以電連接。 28. 如申請專利範圍第26或第27項之電子電路裝置 ，其中’導電金屬層的厚度(t :單位mm)係位於下述[1式；1 所代表的範圍內： P XD/a&lt;t&lt;0.2 X D [1 式] 式中’ P代表壓力單位的常數之0.7Kg/mm2，D代表 彈性基材粒子的直徑（單位：mm)，σ代表導電金屬層形成 用之金屬材料的抗張強度（單位：Kg/mm2)，係將厚度 0.5〜2mm之片狀試料藉抗張試驗機於伸張速度10mm/分下 測定時之抗張強度。 29. —種電子電路裝置，係將電子電路元件的電極部和 電子電路基板的電極部電連接所構成的電子電路裝置，其 特徵在於： 10 - - - -I tflu HI— —m fuB— ^119 n^— t ^ J. (請先閱讀背面之注意事項再填寫本買) 夂紙張足度適用中國國家標嗥（CNS ) A4現格（210X 297公釐） 459072 Α8 Β8 C8 D8 六、申請專利範圍 上述連接係使用於球狀彈性基材粒子的周圍設有導電金 屬層之積層導電性微粒子以進行，於上述電子電路元件的 電極部和上述電子電路基板的電極部之連接部上，對各連 接部係藉由複數個上述積層導電性微粒子以電連接。 30. —種電子電路裝置，係將電子電路元件的電極部和 電子電路基板的電極部電連接所構成的電子電路裝置，其 特徵在於： 在上述導電性微粒子的導電金屬層和上述電子電路元件 的電極部之接觸部，對各接觸部係藉由1個上述導電性微 粒子以電連接，且在上述導電性微粒子的導電金屬層和上 述電子電路基板的電極部之接觸部，對各接觸部係藉由1 個上述導電性微粒子以電連接。 31. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，球狀彈性基材粒子之熱傳 導率爲0.30W/m · K以上。 32. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，球狀彈性基材粒子係樹脂 材料或有機和無機的混合材料。 33. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置’其中，球狀彈性基材粒子中更含 有無機塡料。 34. 如申請專利範圍第29或第3〇項之電子電路裝置， 其中，導電金屬層的厚度(t :單位mm)係位於下述[1式]所 代表的範圍內： U ^張乂度逋用中國國天^準（CNS ) A4規格（210^^5^-—-----~ -ί nn n ^^^1 —^n i ^^—1. ί Ί {請先聞讀背面之注意事項再填寫本頁} -訂_ 經濟部智慧財產局員工消費合作社印製 ABCD 459072 六、申請專利範圍 PXD/a&lt;t&lt;0.2 XD [1 式] 式中’ P代表壓力單位的常數之l.OKg/mm2，D代表 彈性基材粒子的直徑（單位：mm)，σ代表導電金屬層形成 用之金屬材料的抗張強度（單位：Kg/mm2)，係將厚度 0.5〜2mm之片狀試料藉抗張試驗機於伸張速度1()mm/分下 測定時之抗張強度。 35·如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，導電金屬層的成分係擇自 鎳、鈀、金、銀、銅、鋁、铂所構成群中之至少之1。 36. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，導電金屬層係由複數的金 屬層構成= 37. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，導電金屬層的構成部分之 至少1部分的金屬層，係藉電鍍以形成出^ 38. 如申請專利範圍第29或第30項之電子電路裝置 ’其中，構成導電金屬層的至少1金屬層，係藉由使用電 鍍裝置之電鍍以形成出，前述電鍍裝置，係具有：固定於 垂直驅動軸的上端部之圓盤狀底板；配置於上述底板的上 面之僅鍍液可通過的板狀多孔體；配置於上述多孔體外周 上面之通電用的接觸環；中空罩，於上部中央具有開口部 之圓錐台狀的罩之上端部接合孔徑相同於開口徑之中空圓 筒，該中空圓筒的上端部係朝中空圓筒內壁側回折；形成 於上述中空罩的外周部與前述底板間之夾住上述多孔體和 (請先閱讀背面之注意事項再填寫本頁) ，袈 訂 木铁張度適用中國國家標準（CNS ) A4規格（2!0Χ297公釐） 459072 A8 BS CS D8 六、申請專利範圍 接觸環之可旋轉的處理室；將鍍液從上述開口部供給至上 述處理室之供給管；用於接收從上述多孔體的孔飛散出的 鍍液之容器；用以排出儲留於上述容器中的鍍液之排出管 ;從上述開口部***之接觸鍍液用的電極。 39. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，低融點金屬層的厚係彈性 基材粒子直徑的50%以下。 40. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，低融點金屬層的厚係彈性 基材粒子直徑的3%以下。 41. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，構成低融點金屬層的金屬 之融點爲260°C以下。 42. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，構成低融點金屬層的金屬 係擇自鍚、鉛、鉍、銀、鋅、銦、銅所構成群中之至少1 種。 ' 43. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，構成低融點金屬層的金屬 係擇自錫及錫的合金所構成群中之至少1種。 44. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，構成低融點金屬層的金屬 係擇自錫及錫的合金所構成群中之至少1種，又含有擇自 鉛、鉍、銀、鋅、銦、銅所構成群中之至少1種。 13 (請先閱讀背面之注意事項再填寫本頁) Λ衣. 經濟部智总时吨兑3工消費合作社印袈 衣.¾¾足度適用中國國家橾準（CNS ) Α4说格（210X297公廣） 8 888 ABCD 經濟部智葸財是AM工消費合作钍印製 459072 六、申請專利範1圍 45. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，導電金屬層係由複數的金 屬層構成。 46. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，導電金屬層的構成部分之 至少1部分的金屬層，係藉電鍍以形成出。 47. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，構成導電金屬層的至少1 金屬層，係藉由使用電鍍裝置之電鍍以形成出，前述電鍍 裝置，係具有：固定於垂直驅動軸的上端部之圓盤狀底板 ;配置於上述底板的上面之僅鍍液可通過的板狀多孔體； 配置於上述多孔體外周上面之通電用的接觸環；中空罩， 於上部中央具有開口部之圓錐台狀的罩之上端部接合孔徑 相同於開口徑之中空圓筒，該中空圚筒的上端部係朝中空 圓筒內壁側回折；形成於上述中空罩的外周部與前述底板 間之夾住上述多孔體和接觸環之可旋轉的處理室；將鍍液 從上述開口部供給至上述處理室之供給管；用於接收從上 述多孔體的孔飛散出的鍍液之容器；用以排出儲留於上述 容器中的鍍液之排出管；從上述開口部***之接觸鍍液用 的電極。 48. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，彈性基材粒子的直徑爲 5〜700 &quot; m。 49. 如申請專利範圍第26、第27、第29、第30項中 14 衣紙浃尺度適用中國國家標隼（CMS ) A4坭格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁)459.1 VI. 4 '谞 Patent Scope V »1. A device for manufacturing conductive fine particles, comprising: a disk-shaped base plate fixed to the upper end of a vertical drive shaft; and only a plating solution disposed on the outer periphery of the base plate A porous body that can pass through; a contact ring for energization disposed on the above porous body; a hollow cover, a hollow cylinder with an aperture at the upper end of a truncated cone-shaped cover having an opening in the upper center, having a hole having the same diameter as the opening diameter, the hollow The upper end of the figure cylinder is folded back toward the inner wall side of the hollow cylinder; a rotatable processing chamber formed between the outer peripheral portion of the hollow cover and the bottom plate to sandwich the porous body and the contact ring; and the plating solution from the opening portion A supply pipe supplied to the processing chamber; a container for receiving a plating solution scattered from the holes of the porous body; a discharge pipe for discharging the plating solution stored in the container; a contact plating inserted through the opening Electrode for liquid. 2. A device for manufacturing conductive fine particles, comprising: a disk-shaped base plate fixed to the upper end portion of a vertical drive shaft; a porous body disposed on the outer periphery of the base plate; A hole diameter through which the plating solution can pass, and a plate-shaped filter with a thickness of 10 to 1000 / zm is attached; a contact ring for electrification disposed on the porous body; a truncated cone-shaped hollow cover with an opening in the upper center; A rotatable processing chamber sandwiching the porous body and a contact ring between an outer peripheral portion of the hollow cover and the bottom plate; a supply pipe for supplying a plating solution from the opening to the processing chamber; Container of plating solution scattered from the holes of the body; K Renyi applies to China National Standard (CMS) A4 specification (210 × 2Φ7 male; f)----I---- I--I--I--- --t XI nin / —- I &quot; (Please read the precautions on the back before filling in this purchase) 459072 A8 B8 C8 D8 VI. Patent application scope for draining the plating solution stored in the above container; from The opening is inserted Contacting the bath with electrodes. ^^^^ 1 —F ^ kt—A 1 ^ —fl ^ i am · '(Please read the precautions on the reverse side before filling out this page) 3. If you apply for a conductive fine particle manufacturing device according to item 1 of the patent scope' Among them, the porous system has a pore diameter through which the plating solution can pass only on the inner side surface of the porous holder, and a plate-shaped filter with a thickness of 10 to 1000 Am is bonded. 4. A manufacturing apparatus for conductive fine particles, comprising: a disk-shaped base plate fixed to an upper end portion of a vertical drive shaft; a plate-like porous body arranged on the upper surface of the base plate only through which a plating solution can pass; and arranged on the porous body A contact ring for energizing the above; a truncated cone-shaped hollow cover having an opening in the upper center; a rotatable processing chamber formed between the outer peripheral portion of the hollow cover and the bottom plate to sandwich the porous body and the contact ring; A supply pipe for supplying a plating solution from the opening to the processing chamber; a container for receiving the plating solution scattered from the holes of the porous body; a discharge pipe for discharging the plating solution stored in the container; The electrode for contacting the plating solution is inserted into the opening. 5. A device for manufacturing conductive fine particles, comprising: a disk-shaped bottom plate fixed to the upper end of the vertical drive shaft; a plate-shaped porous body arranged on the top of the bottom plate only through which the plating solution can pass; Contact ring for energization on the body; Hollow cover, the upper end of the conical truncated cover with an opening in the upper part is joined to a hollow cylinder with the same diameter as the opening diameter, and the upper end of the hollow cylinder faces the hollow cylinder The inner wall side folds back; the porous 2 formed between the outer periphery of the hollow cover and the bottom plate is sandwiched with the above-mentioned porous 2 wood Qi scale standard applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). Printing 45 9 0 72 Ss C8 D8 6. Rotary processing chamber of patent application body and contact ring; supply pipe for supplying plating solution from the opening to the processing chamber: for receiving holes from the porous body A container for the plating solution scattered; an exhaust pipe for draining the plating solution stored in the container; an electrode for contacting the plating solution inserted through the opening. 6. For the manufacturing apparatus of conductive fine particles according to item 4 or 5 of the scope of patent application, the porous system has a pore diameter through which the plating solution can pass only on the upper surface of the plate-shaped porous holder, and is bonded to a thickness of 10 to lOOOym plate filter. 7. A method for manufacturing conductive fine particles, which is a method for manufacturing conductive fine particles that forms a plating layer on the surface of the fine particles by a plating step, and is characterized by: agglomerating the fine particles generated in the above-mentioned plating step Dispersion, pulverization, and single particle formation include steps for imparting at least one selected from the group consisting of shear force, impact force, and pressure reduction. 8. A method for manufacturing conductive fine particles, which is formed in a plating bath provided with an anode and a cathode, and uses a centrifugal force to cause particles to impinge on the cathode to form a plating layer on the surface of the fine particles, which is characterized by: In order to disperse, pulverize, and singulate the agglomerates of fine particles generated in the above-mentioned plating step, the method includes a step of imparting at least one selected from the group consisting of a shear force, an impact force, and a pressure reduction. 9. A method for manufacturing conductive fine particles, using a disk-shaped base plate fixed to an upper end portion of a vertical drive shaft; a porous body disposed on an outer periphery of the base plate only through which a plating solution can pass; and arranged in the porous 3 -------------I II — ^^ 1----- JI .......... (Please read the note on the back before filling this page) Taimi Le scale is applicable to Chinese National Standard (CNS) A4 specification (210X29? Mm) ABCD 45 9073 VI. Application for patent scope decoration I * Order (Please read the precautions on the back before filling this page) Contact ring; hollow cover, the upper end of the conical truncated cover with an opening in the upper part of the joint with the same diameter as the opening diameter of the hollow cylinder 'the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; formed A rotatable processing chamber sandwiching the porous body and a contact ring between an outer peripheral portion of the hollow cover and the bottom plate; a supply pipe for supplying a plating solution from the opening to the processing chamber; and for receiving the porous body from the porous body Container for plating solution scattered from holes in The discharge tube for the plating solution stored in the container; the electrode for contacting the plating solution inserted from the opening; an electroplating device; and the microparticles after the pretreatment are placed in the processing chamber &gt; The plating step of supplying a plating solution in the processing chamber and rotating the processing chamber around its rotation axis to form a plating layer on the surface of the fine particles is characterized in that it includes a single particle step, in order to apply the plating The agglomerates of the fine particles generated in the applying step are dispersed, pulverized, and singulated to give at least one selected from the group consisting of shear force, impact force, and pressure reduction. 10 .. A manufacturing device of conductive fine particles, which has: a disk-shaped bottom plate fixed to the upper end of a vertical drive shaft by a co-operative company; A porous body on the outer periphery of the bottom plate, through which only the mineral liquid can pass; a contact ring arranged on the porous body for current application; a hollow cover, the upper part of the conical truncated cover with an opening at the center of the upper part has the same joint hole diameter as Opening diameter hollow cylinder 'The upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; a rotatable treatment formed between the outer peripheral portion of the hollow cover and the bottom plate to sandwich the porous body and the contact ring Chamber; the supply pipe for supplying the plating solution from the opening to the processing chamber; for receiving 4 pieces scattered from the holes of the porous body. The ¾-sheet scale applies the Chinese national standard ([NS) A4 specification (210X297 mm) Α8 Β8 C8 D8 459072 6. Containers for the plating solution in the scope of the patent application; a discharge tube for discharging the plating solution stored in the container; an electrode for contacting the plating solution inserted through the opening; and The agglomerates of fine particles generated in the above-mentioned plating step are dispersed, pulverized, and singulated to provide at least one kind of pulverizing device selected from the group consisting of shear force, impact force, and pressure reduction. 11. A device for manufacturing conductive fine particles, comprising: a disk-shaped base plate fixed to an upper end portion of a vertical drive shaft; a porous body disposed on an outer periphery of the base plate so that only a plating solution can pass therethrough; and disposed on the porous body A contact ring for energization; a hollow cover having an opening in the center of the upper portion; a rotatable plating tank formed between the outer periphery of the hollow cover and the bottom plate to sandwich the porous body and the contact ring; in the plating tank, A processing chamber containing an inner side surface of the contact ring separated by a partition through which only a plating solution can pass; a supply pipe for supplying the plating solution from the opening to the plating tank; and for receiving holes from the porous body A container for the plating solution scattered; an exhaust pipe for draining the plating solution stored in the container; an electrode for contacting the plating solution inserted through the opening. 12. A method for manufacturing conductive fine particles, which is a method for manufacturing conductive fine particles that forms a plating layer on the surface of the fine particles by a plating step, and is characterized in that: the conductive fine particle manufacturing device used for performing the above-mentioned plating step It has a rotatable processing chamber with a cathode on the side and a filter unit that allows the plating solution to pass through and be discharged, and it is provided so as not to be shaded from the above-mentioned processing chamber. This paper is compliant with the Chinese National Standard (CNS). ^ Grid (2 ^ Γχ 297 voices) ^ 1— HJ ...... I-___ __ .—1H I. I-»-I ^^^ 1 ^^^ 1 ^^ — 11 (Please read first Note on the back, please fill out this page again.) Ministry of Economic Affairs. ¾ 财 4-55-M Industrial Consumer Cooperative printed r45 907¾ 6. The patent application scope of the anode in extreme contact; the above-mentioned plating steps are made by repeating the above-mentioned processing room. Rotating and stopping are performed, including: a step of energizing to form a coating on the surface of the fine particles while the fine particles are in contact with the cathode, and a stirring step of stirring the fine particles. Xiangzhi A method for manufacturing electrical fine particles, wherein the manufacturing device for the conductive fine particles used includes: a pan-shaped bottom plate fixed to an upper end portion of a vertical drive shaft; and a plate disposed on the upper surface of the bottom plate only through which a plating solution can pass. A porous body; a contact ring for energization disposed on the outer periphery of the porous body; a truncated cone-shaped hollow cover having an opening at the center of the upper portion; the porous body formed between the outer peripheral portion of the hollow cover and the bottom plate And a rotating processing chamber of a contact ring; a supply pipe for supplying the plating solution from the opening to the processing chamber; a container for receiving the mineral liquid scattered from the holes of the porous body; A discharge pipe for mineral liquid in a container; an electrode for contacting a plating solution inserted through the above-mentioned opening. 14. A method for manufacturing conductive fine particles, which is manufactured by using a plating step to form a conductive fine particle on a surface of a fine particle. The method is characterized in that: the conductive fine particle manufacturing device used for performing the above-mentioned plating step is provided with a cathode on the side and a There is a rotatable processing chamber of the furnace part through which the plating solution can pass and is discharged, and an anode provided so as not to contact the cathode in the processing chamber; the effect of the centrifugal force of the rotation of the processing chamber makes the particles contact the cathode In this state, the current is applied to form a coating on the surface of the fine particles, and then the rotation and communication of the processing chamber are stopped. 夂 The paper wave scale is applicable to the Chinese National Standard (CNS) A4 (210X 297 mm) *- = ----- II — ^ 1 ^ — ^ 1 ^ — ^ 1-= · 15-, 1 __-— ^ 1 ι ^ ϋ Wear -5 (Please read the precautions on the back before filling this page) 459072 A8 B8 C8 D8 6. Apply for a patent, and then repeatedly rotate and stop the processing chamber; the specific gravity difference between the fine particles and the plating solution is from 0.04 to 22.00. 15. The manufacturing method of conductive fine particles according to item 14 of the scope of patent application, wherein the manufacturing device of the conductive fine particles used has: a disk-shaped base plate fixed to the upper end portion of the vertical drive shaft; and arranged on the base plate A plate-shaped porous body on which only the plating solution can pass; a contact ring for energization disposed on the upper surface of the porous outer body; a truncated cone-shaped hollow cover having an opening in the upper center; formed on the outer peripheral portion of the hollow cover A rotatable processing chamber sandwiching the porous body and a contact ring with the bottom plate; a supply pipe for supplying a plating solution from the opening to the processing chamber; and for receiving the plating solution scattered from the holes of the porous body A container; a discharge tube for discharging the plating solution stored in the container; and an electrode for contacting the plating solution inserted through the opening. 16. A method for manufacturing conductive fine particles, which is a method for manufacturing conductive fine particles to form a plating layer on the surface of the fine particles by a plating step, characterized in that: the conductive fine particle manufacturing device used for performing the above-mentioned plating step, It has: a rotatable processing chamber having a cathode on the side and a filter unit through which the plating solution can be passed and discharged, and an anode provided not to contact the cathode in the processing chamber; and a centrifugal force based on the rotation of the processing chamber. The effect is to make the particles contact the cathode, and in this state, energize to form a coating on the surface of the particles, and then stop the rotation and energization of the processing chamber, and then repeatedly rotate and stop the processing chamber; The rotation is performed at a rotation number of 2,0-40.0 with the centrifugal effect. The above 7 books are also 4 scales applicable to the Chinese national standard () A4 size (mm) I i. Ί, order {Please read the back Please fill in this page again for the matters needing attention) Zhi Zhicai of the Ministry of Economic Affairs &quot; ^ ai 工 &quot; Fee Cooperatives Innu 45 9072 A8 BS C8 D8 VI. The cycle starts 0.5 to 10 seconds after the start of the rotation of the processing chamber, and the stop time of the processing chamber is 0 to 10 seconds. III! I t 1-j ^ i ^^ 1 -I— (Please read the precautions on the back before filling out this page} 17. —A method for manufacturing conductive particles, which is applied to the surface of the particles by a plating step The method for manufacturing a conductive fine particle for forming a plating layer is characterized in that: the conductive fine particle manufacturing device used for performing the above-mentioned plating step includes a rotatable filter unit having a cathode on a side surface and a filter unit that allows a plating solution to pass through and be discharged. A processing chamber, and an anode provided so as not to be in contact with the cathode in the processing chamber; based on the effect of the centrifugal force of the rotation of the processing chamber, the particles are brought into contact with the cathode, and in this state, electricity is applied to form the surfaces of the particles. After plating, stop the rotation and energization of the processing chamber, and then repeatedly rotate and stop the processing chamber; the rotation of the processing chamber is performed at a rotation number of 2.0 to 40.0 with the centrifugal effect. The energization is performed on the surface of the particles. The thickness of the formed electroplated layer is set to a predetermined thickness, and is started 3 to 10 seconds after the rotation of the processing chamber is started. After the formation of a predetermined thickness of the plated layer is completed, 0.5 to 10 seconds after the start of rotation of the processing chamber, that is, a time shorter than the energization time before the predetermined thickness of the plated layer formed on the surface of the fine particles is formed. Ministry of Economic Affairs, Zhilongshi. 4.8? Printed by Xiaogong Consumer Cooperative, Du printed 18. If the method of manufacturing conductive fine particles in the scope of patent application No. 16 or Η, the manufacturing device of conductive fine particles used, has: Disk-shaped bottom plate fixed to the upper end of the vertical drive shaft: a plate-shaped porous body arranged on the upper surface of the bottom plate only through which the plating solution can pass; a contact ring arranged on the upper surface of the porous outer body; A truncated cone-shaped hollow cover at the opening; the S-shaped outer cover formed on the outer periphery of the above-mentioned hollow cover is again applicable to the Chinese national standard (ΓΝ5) Α4 appearance (210X297 mm) 45 9072 A8 B8 C8 D8 4 局 3 工 消 # Cooperation 钍 Printing 6. Rotary processing chamber sandwiching the porous body and contact ring between the scope of the patent application and the aforementioned base plate; supply the plating solution from the opening to the top The supply pipe of the processing chamber: a container for receiving the plating solution scattered from the holes of the porous body; a discharge pipe for discharging the plating solution stored in the container; and a contact liquid solution inserted through the opening 19. An electroconductive fine particle, which is an electroconductive fine particle having an electroplated outer surface, which is characterized by a particle diameter of 0.5 to 5000 / zm, an aspect ratio of less than 1.5, and a coefficient of variation of 50% or less. The conductive fine particles of the scope item 19 are electroplated using a rotatable plating device having a cathode on the outer periphery and an anode provided so as not to contact the cathode. The conductive fine particles according to 20, wherein gold, platinum or palladium is used for the plating. 22. For example, the conductive fine particles of the 19th or 20th in the scope of patent application, wherein the thickness of the plating layer is 0.2 ~ 3. 23. An anisotropic conductive adhesive, which contains conductive fine particles in the scope of application of the patent No. I9 or No. 20. 24. The anisotropic conductive adhesive according to item 23 of the application, wherein the conductive fine particles are arranged at a specific position. 25. A kind of conductive connection structure 'is connected by an anisotropic conductive adhesive in the scope of patent application No. 23 or No. 24. 26. An electronic circuit device is an electronic circuit device formed by electrically connecting an electrode portion of an electronic circuit element and an electrode portion of an electronic circuit substrate, and is characterized by: 9 ^^^ 1 ^^^^ 1 ^^^^ 1 I- I mm ^ ii Ji-· ί- ι n ^^^^ 1 Ψ (Please read the notes on the back before filling out this page) The paper scale is applicable to China National Standards (CNS) 2l0X297mm) Jing-Ministry Total Time &quot; ^: 玲 工 消 # Cooperative Society Printing Disaster 45BQ72 A8 B8 C8 ---- TV, Shen Qing Patent Scope The connection system is used for spherical elastic substrate particles. A conductive metal layer is provided on the surface to laminate conductive fine particles. On the connection portion between the electrical circuit element and the electrode portion of the electronic circuit substrate, each connection portion is made conductive by a plurality of the above-mentioned layers. The microparticles are electrically connected. 27. An electronic circuit device, which is an electronic circuit device constituted by electrically connecting an electrode portion of an electronic circuit element and an electrode portion of an electronic circuit: an electrode portion of a circuit board, characterized in that the connection is used for spherical elastic substrate particles. A conductive metal layer is provided on the surface, and a conductive layer of conductive particles is formed on the surface of the conductive metal layer with a superposed layer of a low-melting point metal layer. The electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate are provided. The connecting portion is electrically connected to each of the connecting portions through the plurality of laminated conductive fine particles. 28. For the electronic circuit device of the 26th or 27th in the scope of application for a patent, wherein the thickness of the conductive metal layer (t: unit mm) is within the range represented by the following [1 formula; 1: P XD / a &lt; t &lt; 0.2 XD [Formula 1] where 'P represents 0.7Kg / mm2 of the constant of the pressure unit, D represents the diameter of the elastic substrate particles (unit: mm), and σ represents the tensile strength of the metallic material used to form the conductive metal layer Strength (unit: Kg / mm2) refers to the tensile strength when a sheet-like sample with a thickness of 0.5 to 2 mm is measured by a tensile tester at a tensile speed of 10 mm / min. 29. An electronic circuit device, which is an electronic circuit device constituted by electrically connecting an electrode portion of an electronic circuit element and an electrode portion of an electronic circuit substrate, which is characterized by: 10----I tflu HI— —m fuB— ^ 119 n ^ — t ^ J. (Please read the precautions on the back before filling out this purchase) 夂 The fullness of the paper is applicable to Chinese National Standards (CNS) A4 is now available (210X 297 mm) 459072 Α8 Β8 C8 D8 VI. Application Scope of the patent: The above-mentioned connection is performed by laminating conductive fine particles provided with a conductive metal layer around a spherical elastic substrate particle, and connecting the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate with each other. Each connection portion is electrically connected by a plurality of the laminated conductive fine particles. 30. An electronic circuit device, which is an electronic circuit device constituted by electrically connecting an electrode portion of an electronic circuit element and an electrode portion of an electronic circuit substrate, characterized in that: the conductive metal layer of the conductive fine particles and the electronic circuit element The contact portion of the electrode portion is electrically connected to each contact portion by one of the conductive fine particles, and the contact portion of the conductive metal layer of the conductive fine particles and the electrode portion of the electronic circuit board is contacted with each contact portion. It is electrically connected via one of the above-mentioned conductive fine particles. 31. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the thermal conductivity of the spherical elastic substrate particles is 0.30 W / m · K or more. 32. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the spherical elastic substrate particles are a resin material or a mixture of organic and inorganic materials. 33. The electronic circuit device of any one of claims 26, 27, 29, and 30, wherein the spherical elastic substrate particles further contain an inorganic filler. 34. The electronic circuit device according to the 29th or 30th scope of the patent application, wherein the thickness of the conductive metal layer (t: unit mm) is within the range represented by the following [Formula 1]: U ^ 张 乂 度 逋 用China National Day Standard (CNS) A4 (210 ^^ 5 ^ -------- ~ -ί nn n ^^^ 1 — ^ ni ^^ — 1. Ί Ί {Please read the note on the back first Please fill in this page again}-Order _ Printed by ABCD 459072, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Patent application scope PXD / a &lt; t &lt; 0.2 XD [Formula 1] where 'P represents the constant of the pressure unit l. OKg / mm2, D represents the diameter of the elastic substrate particles (unit: mm), and σ represents the tensile strength of the metallic material used for the formation of the conductive metal layer (unit: Kg / mm2), which is a sheet sample with a thickness of 0.5 to 2 mm Tensile strength when measured by a tensile tester at a tensile speed of 1 () mm / min. 35. An electronic circuit device according to any one of the 26th, 27th, 29th, and 30th patent application scope, where The composition of the conductive metal layer is selected from at least one of the group consisting of nickel, palladium, gold, silver, copper, aluminum, and platinum. The electronic circuit device of any one of items 27, 29, and 30, wherein the conductive metal layer is composed of a plurality of metal layers = 37. As in the scope of application for patents Nos. 26, 27, 29, and 30 The electronic circuit device of any one, wherein the metal layer of at least one part of the constituent part of the conductive metal layer is formed by electroplating ^ 38. For example, the electronic circuit device of the 29th or 30th in the scope of patent application 'wherein, At least one metal layer constituting the conductive metal layer is formed by electroplating using an electroplating device. The electroplating device includes: a disk-shaped base plate fixed to the upper end portion of the vertical drive shaft; A plate-like porous body through which only a plating solution can pass; a contact ring for energization disposed on the above-mentioned outer periphery of the porous body; a hollow cover having a joint hole diameter at the upper end of a truncated cone-shaped cover having an opening in the upper center, the same diameter as the opening diameter A hollow cylinder, the upper end of which is folded back toward the inner wall side of the hollow cylinder; the porous body formed between the outer peripheral portion of the hollow cover and the bottom plate and (please read the back first Please note this page and fill in this page again). The pre-ordered wood and iron tension is applicable to China National Standard (CNS) A4 specification (2! 0 × 297 mm) 459072 A8 BS CS D8 6. Rotary processing chamber for patent application contact ring; A supply pipe for supplying the plating solution from the opening to the processing chamber; a container for receiving the plating solution scattered from the holes of the porous body; a discharge pipe for discharging the plating solution stored in the container; The electrode for contacting the plating solution is inserted into the opening. 39. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the thickness of the low-melting-point metal layer is less than 50% of the diameter of the elastic substrate particles. 40. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the thickness of the low-melting-point metal layer is less than 3% of the particle diameter of the elastic substrate. 41. For an electronic circuit device according to any one of claims 26, 27, 29, and 30, the melting point of the metal constituting the low melting point metal layer is 260 ° C or lower. 42. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the metal forming the low melting point metal layer is selected from the group consisting of rhenium, lead, bismuth, silver, zinc, At least one of the group consisting of indium and copper. 43. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the metal constituting the low-melting point metal layer is selected from the group consisting of tin and tin alloys. At least one of them. 44. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the metal constituting the low-melting point metal layer is selected from the group consisting of tin and tin alloys. At least one species, and at least one selected from the group consisting of lead, bismuth, silver, zinc, indium, and copper. 13 (Please read the notes on the back before filling out this page) Λ clothing. The Ministry of Economic Affairs ’s total tonnage / 3 industry consumer cooperatives ’printed clothing. ¾¾ Applicable to China National Standards (CNS) Α4 standard (210X297) ) 8 888 ABCD Intellectual Property of the Ministry of Economic Affairs is printed by AM Industrial Consumer Cooperation 459072 6. Application for patent scope 1 45. If you apply for any of the 26th, 27th, 29th, and 30th of the patent application for electronic circuits The device, wherein the conductive metal layer is composed of a plurality of metal layers. 46. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the metal layer of at least one part of the conductive metal layer is formed by electroplating. 47. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein at least one metal layer constituting the conductive metal layer is formed by electroplating using an electroplating device. The aforementioned electroplating device includes: a disk-shaped bottom plate fixed to the upper end of the vertical drive shaft; a plate-shaped porous body arranged on the upper surface of the bottom plate only through which the plating solution can pass; A hollow cover; the upper end of the truncated cone-shaped cover with an opening in the upper center has a joint hole with the same diameter as the opening diameter of the hollow cylinder, and the upper end of the hollow cylinder is folded back toward the inner wall side of the hollow cylinder; A rotatable processing chamber sandwiching the porous body and a contact ring between an outer peripheral portion of the hollow cover and the bottom plate; a supply pipe for supplying a plating solution from the opening to the processing chamber; A container for the plating solution scattered from the holes of the body; a discharge pipe for discharging the plating solution stored in the container; and an electrode for contacting the plating solution inserted through the opening. 48. The electronic circuit device according to any one of claims 26, 27, 29, and 30, wherein the diameter of the elastic substrate particles is 5 to 700 m. 49. If the scope of application for patents Nos. 26, 27, 29, and 30 of 14 applies to the Chinese paper standard (CMS) A4 grid (210 X 297 mm), please read the precautions on the back (Fill in this page again) 459072 A8 B8 C8 D8 六'申請專利範圍 任一項之電子電路裝置，其中，彈性基材粒子的直徑爲 10〜150 // m。 50. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，在藉平行方向的物理力以 使電子電路元件的電極部及電子電路基板電極部中的一方 相對於另一方在平行方向移位時，積層導電性微粒子或重 積層導電性微粒子會產生彈性地剪切變形，且相對該變形 之回復能力大。 51. —種電子電路元件或電子電路基板，係藉導電性微 粒子以連接之電子電路元件或電子電路基板，其特徵在於 :前述導電性微粒子和電子電路元件的電極部或電子電路 基板的電極部間之接著力F(單位：gr)係位於下述[2式]所 代表的範圍： 500XD，XD’(gr) &lt; F &lt; 8000XD，XD’(gr) [2 式] 其中，D’爲導電性微粒子的直徑(單位：mm)。 52. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，係使用申請專利範圍第51 項之電子電路元件以及/或是電子電路基板，流經電子電路 元件的電極部和電子電路基板的電極部間之電流的極限値 是每1個電極部0.5〜10安培。 53. 如申請專利範圍第26、第27、第29、第30項中 任一項之電子電路裝置，其中，電子電路元件是1C，電子 電路元件和電子電路基板間係施予反扣晶片接合。 54. 如申請專利範圍第26、第27、第29、第30項中 15 (請先閱讀背面之注意事項再填寫本頁} .笨- 訂 經濟部智慧时是A:㈡工消#合作社印岌 夂·張尺度適用中國國家標準（CNS &gt; A4規格（210X297公釐） 459072 A8 BS C8 D8 六、申請專利範圍 任一項之電子電路裝置，其中，電子電路元件是晶片尺寸 封裝物(CSP) ’電子電路元件和電子電路基板間係施予球概 陣列(BGA)接合。 55,一種電子電路裝置之製造方法，係用以製造出如申 請專利範圍第26〜54項中任一項之電子電路裝置之製造方 法，其特徵在於，係包含： 在電子電路的電極部及電子電路基板的電極部中之任一方 上’配設由導電接著劑或銲錫膏構成之導電材的第1步驟 t 在配設有前述導電材的電極部上載置積層導電性微粒子之 第2步驟； 將前述載置有積層導電性微粒子的電極部藉加熱以電連接 之第3步驟；以及 藉由在維持前述電連接下之冷卻，以使電連接固定之第4 步驟。 56· —種電子電路裝置之製造方法，係用以製造出如申 請專利範圍第26〜S4項中任一項之電子電路裝置之製造方 法，其特徵在於： 在電子電路元件的電極部及電子電路基板的電極部中之任 —方上’藉由將於球狀彈性基材粒子的周圍被覆導電金屬 層所構成之1個導電性微粒子加熱壓接以載置之，而使上 述導電性微粒子的導電金屬層和上述電極部藉導電材以維 持電連接。 57_ —種電子電路裝置之製造方法，係用以製造出如申 16 尺度適用中國國家標率（CNS ) A4規格{ 2!0X297公釐） (請先閲讀背面之注意事項再填寫本頁) ，装. 經.¾部智.¾財&lt;i/..;s工消費合作社印製 A8 B8 C8 D8 459072 六、申請專利範園 請專利範圍第26~54項中任一項之電子電路裝置之製造方 法，其特徵在於，係包含： . —---II 1^— I - I -1 - - -I I— I I. &gt;^ϋ - - ^^^1 n^i ^ *va (請先閱讀背面之注意事項再填寫本頁) 在電子電路的電極部及電子電路基板的電極部中之任一方 上，載置重積層導電性微粒子之第1步驟； 藉由將前述載置有重積層導電性微粒子的電極部附近加熱 ’以使重積層導電性微粒子的低融點金屬層融解，而使前 述重積層導電性微粒子的導電金屬層和電極部電連接之第 2步驟； 藉由在維持前述電連接下之冷卻，以使電連接固定之第3 步驟。 在固定於一方的電極部之前述重積層導電性微粒子上·，將 另一電極部重疊之第4步驟；以及 將刖述另一電極部和固定於一方的電極部之前述重積層導 電性微粒子電連接之第5步驟。 58. —種電子電路裝置之製造方法，係用以製造出如申 請專利範圍第26〜54項中任一項之電子電路裝置之製造方 法，其特徵在於： 將積層導電性微粒子或重積層導電性微粒子載置於電子電 路元件的電極部或電子電路基板的電極部中之任一方時， 所用的模具是在對應於上述電子電路的電極部或電子電路 基板的電極部之位置上、具有比上述積層導電性微粒子或 重積餍導電性微粒子的直徑小之凹部者，於該模具之凹部 上載置上述積層導電性微粒子或重積層導電性微粒子，接 著在載置於模具的上述積層導電性微粒子或重積層導電性 17 中國國家標準（CNS ) A4現格（210X297公釐） 45 90 72 鉍 C3 D8 六、申請專利範圍 微粒子的露出面之一部分塗布附著性液體後，藉由使上述 模具接觸上述電極部中之任一方，以使上述積層導電性微 粒子或重積層導電性微粒子轉置於上述電極部上。 59. —種積層導電性微粒子或重積層導電性微粒子，係 用於如申請專利範圍第26〜54項中任一項之電子電路裝置 〇 60. —種電子電路元件，係用於如申請專利範圍第 26〜54項中任一項之電子電路裝置^ 61. —種電子電路基板，係用於如申請專利範圍第 26〜54項中任一項之電子電路裝置。 ’ (請先聞讀背面之注意事項再填寫本頁) ，笨. 訂 經濟部tss:是勾Μ工;fl#合作社印製 木纸張尺度適用中國國家標準（CNS ) Λ4現格（210XW7公釐）459072 A8 B8 C8 D8 Electronic circuit device of any one of the scope of the patent application, wherein the diameter of the elastic substrate particles is 10 ~ 150 // m. 50. The electronic circuit device according to any one of the 26th, 27th, 29th, and 30th in the scope of application for a patent, in which a physical force in a parallel direction is used to make the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate When one of them is displaced in a parallel direction with respect to the other, the laminated conductive fine particles or the laminated conductive fine particles are elastically sheared and deformed, and the recovery ability to the deformation is large. 51. An electronic circuit element or an electronic circuit substrate is an electronic circuit element or an electronic circuit substrate that is connected by conductive fine particles, characterized in that: the aforementioned conductive particles and the electrode portion of the electronic circuit element or the electrode portion of the electronic circuit substrate The bonding force F (unit: gr) is located in the range represented by the following [Formula 2]: 500XD, XD '(gr) &lt; F &lt; 8000XD, XD' (gr) [Formula 2] where D ' The diameter (unit: mm) of the conductive fine particles. 52. The electronic circuit device according to any one of the scope of patent application No. 26, 27, 29, and 30, wherein the electronic circuit component and / or the electronic circuit substrate of the scope of patent application No. 51 are used. The limit of the current between the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit board is 0.5 to 10 amperes per electrode portion. 53. The electronic circuit device according to any one of the 26th, 27th, 29th, and 30th in the scope of application for a patent, wherein the electronic circuit element is 1C, and the electronic circuit element and the electronic circuit substrate are subjected to reverse wafer bonding. . 54. If the scope of application for patents is 15 in the 26th, 27th, 29th, and 30th (please read the precautions on the back before filling out this page). Stupid-A: ㈡ 工 消 # 部 社 印张 · Zhang scale is applicable to Chinese national standard (CNS &gt; A4 specification (210X297mm) 459072 A8 BS C8 D8 6. Electronic circuit device of any one of the scope of patent application, where the electronic circuit component is a chip size package (CSP ) 'BGA bonding is applied between the electronic circuit element and the electronic circuit substrate. 55. A method of manufacturing an electronic circuit device is used to manufacture an electronic circuit such as any one of claims 26 to 54 in the scope of the patent application. The device manufacturing method is characterized by comprising: a first step t of disposing a conductive material composed of a conductive adhesive or a solder paste on either one of an electrode portion of an electronic circuit and an electrode portion of an electronic circuit substrate; The second step of placing the laminated conductive fine particles on the electrode portion provided with the conductive material; the third step of electrically connecting the electrode portion on which the laminated conductive fine particles are placed to be electrically connected; And the fourth step of fixing the electrical connection by cooling while maintaining the aforementioned electrical connection. 56 · —A method for manufacturing an electronic circuit device, which is used to manufacture any one of the items in the scope of patent application No. 26 ~ S4 The method for manufacturing an electronic circuit device according to the item is characterized in that: on any one of the electrode portion of the electronic circuit element and the electrode portion of the electronic circuit substrate, a conductive metal layer is coated on the periphery of the spherical elastic substrate particles. The formed conductive fine particles are heated and crimped to be placed, and the conductive metal layer of the conductive fine particles and the electrode portion are electrically connected by a conductive material. 57_ —A method for manufacturing an electronic circuit device, which is used In order to produce the 16-scale application of China National Standards (CNS) A4 specifications {2! 0X297 mm) (please read the precautions on the back before filling this page), install. i / ..; s printed by the Industrial and Consumer Cooperatives A8 B8 C8 D8 459072 6. The method of manufacturing an electronic circuit device in any one of the patent scope 26 to 54 for patent application, which is characterized by:—--- II 1 ^ — I-I -1---II— I I. &gt; ^ ϋ--^^^ 1 n ^ i ^ * va (Please read the notes on the back before filling this page) The first step of placing conductive particles on the electrode layer of the electronic circuit and the electrode portion of the electronic circuit substrate is performed by heating the vicinity of the electrode portion on which the conductive particles on the conductive layer are placed. The second step of melting the low-melting-point metal layer of the conductive particles of the re-stacked layer and electrically connecting the conductive metal layer of the conductive particles of the re-stacked layer with the electrode portion; Step 3 of the connection. The fourth step of overlapping the conductive particles on the one of the electrode layers and the other electrode portion; and overlapping the conductive particles on the other electrode portion and the one of the electrode layers. Step 5 of the electrical connection. 58. A method for manufacturing an electronic circuit device, which is a method for manufacturing an electronic circuit device according to any one of claims 26 to 54 in the scope of application for a patent, which is characterized in that: a conductive layer of conductive particles or a stacked layer is conductive When the fine particles are placed on either the electrode portion of the electronic circuit element or the electrode portion of the electronic circuit substrate, the mold used is at a position corresponding to the electrode portion of the electronic circuit or the electrode portion of the electronic circuit substrate, and has a specific ratio. The laminated conductive fine particles or the recessed portions having a small diameter of the stacked conductive fine particles are placed on the concave portion of the mold, and then the stacked conductive fine particles are placed on the mold. Or the conductivity of the rebuilt layer 17 Chinese National Standard (CNS) A4 (210X297 mm) 45 90 72 Bismuth C3 D8 VI. After applying an adhesive liquid to a part of the exposed surface of the patent application fine particles, the above mold is brought into contact with the above Either one of the electrode portions, so that the above-mentioned laminated conductive fine particles or the laminated conductive fine particles are Turn placed on the electrode portion. 59. —Laminated conductive fine particles or relaminated conductive fine particles, which are used in electronic circuit devices such as any one of the scope of applications for patent applications Nos. 26 to 54. 60. —An electronic circuit element used in, for example, patent applications Electronic circuit device according to any one of the scope of items 26 to 54 ^ 61. An electronic circuit substrate for an electronic circuit device according to any one of the scope of application for patents, 26 to 54. '(Please read the notes on the back before filling out this page), stupid. Order the Ministry of Economic Affairs tss: Yes Gou Mong; fl # Cooperatives printed wood paper standards apply Chinese National Standards (CNS) Λ4 now (210XW7 public %)
TW87105606A 1997-04-17 1998-04-14 Conductive particles and method and device for manufacturing the same, anisotropic conductive adhesive and conductive connection structure, and electronic circuit components and method of manufacturing the same TW459072B (en)

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JP10018197 1997-04-17
JP14381497 1997-06-02
JP29243497 1997-10-24
JP29243397 1997-10-24
JP29585997 1997-10-28

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409891B (en) * 2010-02-11 2013-09-21
TWI495765B (en) * 2009-09-04 2015-08-11 Hitachi Metals Ltd Plating device
CN115064300A (en) * 2022-08-18 2022-09-16 西安拓库米电子科技有限公司 Silver conductor paste for nickel-plating-free chip resistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495765B (en) * 2009-09-04 2015-08-11 Hitachi Metals Ltd Plating device
TWI409891B (en) * 2010-02-11 2013-09-21
CN115064300A (en) * 2022-08-18 2022-09-16 西安拓库米电子科技有限公司 Silver conductor paste for nickel-plating-free chip resistor

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