458849 A7 _ B7 五、發明說明（） 發明領域： (詩先閲讀背面之注意事項再填寫本頁) 本發明係與一種半導體製程設備有關，特別是有關於 一種化學機械研磨之溫度控制裝置，以應用於晶圓或半導 體基材表面平坦化的材質去除製程之中。 發明背景： 自從第一個積體電路元件的誕生以來，半導體工業已 發展了近四十年，而半導體製造的技術亦持續的進展，以 將晶片上元件的尺寸減至最小；藉由如沈積、微影、蝕刻、 平坦以及熱處理等製程技術的進步，積體晶片上元件與電 路的積集度亦日益提昇，亦提供良好的製程良率及產品特 性。以目前的製程技術而言，單一晶片已能容納數千萬個、 甚至是數億個元件’製程技術的進展亦使積體電路上的元 件大小可縮減至次微米（s u b - m i c r ο η )、甚至是深次微米 (deep sub-micron)的尺寸範圍内，以達到更高積集度 的目標。 經濟部智慧財產局員工消費合作社印製 在半導體基材上形成各個膜層、並定義各層的結構及 圖案、以藉由不同材質及組合及連接關係形成所需的元件 結構的製程之中，平坦化製程扮演著極為重要的角色。藉 由平坦化製程的應用’可使原來因形成不同圖案與結構的 高低起伏表面，經由平坦化的步驟而使其表面平坦化，提 供平坦的基材表面，以提高後續膜層形成時的均勻性，並 本紙張义度適用中國國家標準（CNS)A4規格（210 >= 297公釐） 4 5 88 4 9 A7 B7 五、發明說明（） 藉由良好的平坦度提供如微影製程或晶圓對準程序時的準 確性及定位精確性。 此外，在形成基材上各個連線層間之導體插塞的過程 之中，平坦化製程亦具有極為重要的應用，以於導體材料 填入介電層的接觸洞或連接洞後，藉由平坦化的表面材質 去除方式'將介電層表面的多餘導體材料去除，以留下各 別獨立的導體插塞於介電層内。 以目前的半導體製程而言，應用最為頻繁的平坦化製 程之一 ’即是化學機械研磨（chemical-mechanical polishing; CMP)的製程，藉由加入與基材表面材質或 膜層具有反應作用的溶液、以及具研磨作用的研磨顆粒所 組成的研磨液（s 1 u r r y ;或稱研漿），並提供相對於晶圓表 面的運動，以同時對基材表面材質產生化學性及物理性的 去除作用。而在現階段的應用之中，化學機械研磨也由於 其所提供的良好均勻性、控制性、及表面平坦度，而廣為 應用於次微米及深次微米的半導體製程之令，而成為超大 型積體電路（ultra large scale.integrated circuit; U L S I)階段中，製程應用上最為重要的平坦化製程。 ' 由於化學機械研磨的製程處理，會同時牵涉到表面材 質的化學性及物理性去除作用，因此製程對溫度條件的變 化較為敏感，在傳統應用上，化學機械研磨時的製程溫度 即成為控制材質去除速率、研磨均勻性、以及研磨過程中 化學機制及物理機制間平衡的重要因素。 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝 訂----- 經濟部智慧財產局員工消費合作社印製 4 5 88 4 9 A7 ------ -B7五、發明說明（） 經濟部智慧財產局員工消費合作社印製 I知的化學機械研磨設備之中，為控制製程的溫度， 大多會有溫度控制的裝置，如第一 a圖所示’即為—化學 機械研磨設備的上視示意圖，圖中所標示的區域10即為研 磨平台所在的區域，研磨頭14則用以夾持晶圓於研磨的區 域上運動。第一b圖則為化學機械研磨設備的侧視示意圖， 研磨平台10上設有研磨墊12，以提供作為晶圓研磨時的 承載面。一般而言，在習知的化學機械研磨設備之中，溫 度控制的元件皆是設置於研磨平台10内、研磨墊12的下 方處，也就是大略位於圖中箭頭所指的位置，並利用液體 流動的方式，或者是設置加熱線圈或加熱器的方式，來達 到所需的升溫或降溫的目的’而藉此控制製程的溫度條件。 並可藉由設置於研磨平台10之内的溫度感應裝置，來進行 溫度的監控。 然而I上述的化學機械研磨設備之溫度控制裝置，會 產生許多的缺點。由於研磨墊i 2 一般係使用高分子類的物 質，以提供良好的壓力及均勻性，但由於其材質的特性， 其傳熱的效率較差，因此研磨平台丨〇處的溫度條件，往往 會與實際研磨時接觸晶圓的研磨墊1 2有相當的差矩 外’以目前化學機械研磨較高的製程效率而言，通常 進行的時間並不長，一般約在數十秒至數百秒的範固内 而在如此短暫的製程時間中’研磨平台10 4的溫度條件並 無法及時傳導至接觸晶圓的研磨墊12上，研磨平台ι 内的溫度感應裝置亦無法即時反應製程的溫度變化， ( 本纸張尺度適用中國國家標準（CNS>A4規格（210 X 297公楚） (請先閲讀背面之注意事項再填寫本頁) --裝 ----訂----- 4 經濟部智慧財產局員工消費合作社印製 5 8S4 9 A7 -----iZ_______ 五、發明說明（） 製程溫度條件上的偏差、亦造成溫度控制上的困難。 發明目的―及想述： 本發明的目的為提供一種化學機槭訢磨之吳度控制裝 置。 本發明的另一目的為提供一種化學機械研磨之溫度控 制裝置’以提供化學機械研磨時準確而快速的溫度控制。 本發明的另一目的為提供一種化學機械研磨之溫度控 制裝置1可達到即時升溫及測溫的效果。 本發明的另一目的為提供一種化學機械研磨之溫度控 制裝置以確實控制及反應實際研磨時接觸晶圓之研磨塾 的溫度條件及變化，增加製程溫度的控制性a 本發明中化學機械研磨之溫度控制裝置，主要可包含： 研磨平台、研磨頭、幅射加熱裝置、以及溫度檢測裝置； 研磨平ο上方並包含一研磨墊；研磨頭則用以旋轉晶圓以 進行對晶圓之研磨；幅射加熱裝置係設置於研磨墊上方， 以藉由熱幅射方式加熱研磨墊；溫度檢測裝置則用以蟑測 研磨墊之溫度β 以較佳實施例而言，上述之晶圓係於研磨墊上之部分 區域進行旋轉之研磨，並由上述之研磨平台係提供研磨墊 於研磨過程中之旋轉運動。幅射加熱裝置係加熱研磨墊上 之部分區域，以於此一區域旋轉進入與晶圓接觸之研磨區 域前、加熱至所需之處理溫度。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) - I--I I I I < f ( I ί 經濟部智慧財產局員工消費合作社印製 5 S84 g A7 _B7_ 五、發明說明（） 除此之外，化學機械研磨溫度控制裝置亦可選擇性的 加入冷卻裝置、設置於研磨墊的下方，以提供某些製程中 冷卻研磨墊的效果。在較佳實施例之中，化學機械研磨溫 度控制裝置並可包含研磨液供給裝置於研磨墊上方，以提 供研磨液至研磨塾表面上；亦可加入研磨塾調節裝置、設 置於研磨墊上方之部分非研磨區域，用以調節研磨墊之表 面狀態。 圖式簡箪說明= 第一a圖 顯示習知之化學機械研磨設備的上視示意 圖。 第一 b圖 顯示習知之化學機械研磨設備的側視示意圖 第二a圖顯示本發明中化學機械研磨之溫度控制裝置 的上視示意圖。 第二b圖 顯示則為本發明中化學機械研磨之溫度控制 裝置的侧視示意圖。 發明詳細說明： 本發明中提出一種化學機械研磨之溫度控制裝置，藉 由溫度控制方式的改變*可直接產生對實際研磨時接觸晶 圓之研磨墊的加熱，以提供化學機械研磨時準確而快速的 溫度控制，達到即時升溫及測溫的效果’並確實控制及反 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------.h. I -----1 J I 訂·! ---I 1 - (請先閱讀背面之注意事項再填寫本頁) 五、發明說明（ A7 B7 經濟部智铥財產局員工消費合作社印製 映製轾溫度變化，增加製程溫度的控制性α 參見第二a圖所示，即為本發明中化學機械研磨之溫 度控制裝置的上視示意圖，第二b圖所示則為本發明中化 學機械研磨之溫度控制裝置的側視示意圖；如第二b圖令 所示，化學機械研磨之溫度控制裝置主要可包含：研磨平 台20、研磨頭22(顯示於第二a囷中）、幅射加熱裝置24、 以溫度檢測裝置2 6。 研磨平台20上方即設置研磨墊28,研磨墊可視不同 研磨製程的須要來使用不同的彈性墊層材質，例如使用高 分子類的化合物，以提供研磨時對晶圓表面的麼力及施壓 時的均勻性；研磨頭2 2則為一夾持晶圓之旋轉頭，以旋轉 載附於其下端之晶圓、以進行對晶圓之研磨；在化學機械 研磨進行的過程之中，研磨頭22下方的晶圓即於研磨墊28 上之部分區域進行旋轉之研磨，如圖中箭號30所指之區 域，即為其運動及研磨時所在範圍之一例；在研磨的過程 之中，研磨平台20並提供帶動研磨墊28整體之旋轉運動> 以產生與晶圓表面的相對運動，提供較佳的研磨效果。 幅射加熱裝置24則設置於研磨墊28的上方，以藉由 熱幅射的方式加熱研磨墊28 *不僅可達成直接加熱研磨墊 28的效果，並可避免與運動中的研磨塾之直接接觸’減少 研磨液污染及研磨墊28運動自由度上的問題’以較佳實施 例而言，幅射加熱裝置24可使用具良好加熱特性的幅射加 熱燈、或是紅外線加熱燈等。在較佳例之中’幅射加熱裝 本紙張&度適用中國國家標準（CNS)A4規格（210x297公釐） (諝先时诿背面之注意事.項再填寫本頁) 裝 訂--------- 4 6 884 9 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 置24係加熱研磨墊28上之部分區域，如第二a圖中所標 示之®域24a’以於此區域依逆時針方向、旋轉進入與晶 園接觸之研磨區域前、將研磨塾28表面實際接觸晶圓的= 域加熱至所需的製程處理溫度’而能達到即時的加熱效果。 溫度檢測裝置2 6則用以檢測研磨塾2 g、或說是其表 面及於研磨時所附著之研磨液的溫度，在較佳實施例之中， 溫度檢刹裝置26之設置考量，係用以檢測在加熱區24a 受熱後的區域、於進入研磨區域30前之溫度；第二&圖中 所標示之測溫點2 6 a，即為一測溫區域的較佳例。在較佳 例之中’溫度檢測裝置2 6可應用非接觸式的溫度檢測裝 置’例如採用江外線測溫裝置等’避免與運動中的研磨塾 及研磨液直接接觸，減少研磨液污染及研磨墊28運動便利 性上的問題，並可藉由非接觸的測溫方式提供測量表面溫 度的準確性。 以較佳實施例而言’上述的幅射加熱裝置2 4以及溫度 檢測裝置2 6，可設置於整體研磨機台内部的侧壁或上方， 亦可附加於研磨頭22的非旋轉部分（即研磨頭22之基座 部分）的側緣，皆能達成上述較佳例中設置之目的及位置上 的效果。 除了上述中的各個元件之外，若是須因應不同製程的 控溫需要，上述的化學機械研磨溫度控制裝置亦可包含冷 卻裝置30、如第二b圖所示’設置於研磨墊28下方的研 磨平台20處，並可利用液體流動的方式來冷卻研磨墊28» 本紙張尺度適用中固國家標準（CNS)A4規格（210 x 297公釐） — — — — — III 1.)^ ----- I--訂·--I 1 I I I I (請先間讀背面之注意事項再填寫本頁) 4 δ 88 4 g 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 如第二a圖所示，在一般系統的應用上，上述之化學 機械研磨溫度控制裝置並可包含研磨液供給裝置32、設置 於研磨墊28的上方’以提供製程進行時所需的研磨液至研 磨墊28表面上’並可藉由研磨液的交換及流動達成另一形 式的溫度控制；亦可包含研磨墊調節裝置（pad c〇nditi〇ner)34、設於研磨墊28上方之部分非研磨區 域，用以調節研磨墊28之表面狀態。 因此’藉由本發明中的化學機械研磨之溫度控制裝置， 可由幅射加熱裝置2 4及溫度檢測裝置2 6提供即時且直接 的加熱與溫度監控，達到即時升溫及測溫的效果，提昇研 磨製程溫度的控制性。例如以形成鎢插塞所需的化學機械 研磨製程為例，藉由本發明中的化學機械研磨之溫度控制. 裝置’可在製程一啟始時，即將研磨區域的溫度由原來的 低溫（2 0 °C )、於數秒之内即加熱至所需的較佳製程溫度 此例中約為5 0 °C至7 0 °C，並能於製程進行時隨時保持所 需的溫度條件，使研磨速率能於製程一開始時即快速提昇 至所需的設定值’增_加製程的控制性及研磨的均勻性’且 大幅縮短製程進行的時間，增加晶圓量產的效率β ' 本發明以較佳之實施例說明如上，僅用於藉以幫助了 解本發明之實施，非用以限定本發明之精神，而熟悉此領 域技藝者於領悟本發明之精神後，在不脫離本發明之精神 範圍内，當可作些許更動潤飾及等同之變化替換，其專利 保護範圍當視後附之申請專利範圍及其等同領域而定》 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------7—-裝 ------訂- ---- 1--^! (請先故球背面之泫意事項再填寫本頁)458849 A7 _ B7 V. Description of the invention () Field of invention: (Read the notes on the back of the poem before filling out this page) The present invention is related to a semiconductor process equipment, especially a temperature control device for chemical mechanical polishing. It is used in the material removal process for flattening the surface of a wafer or a semiconductor substrate. Background of the Invention: Since the birth of the first integrated circuit components, the semiconductor industry has developed for nearly forty years, and the technology of semiconductor manufacturing has continued to progress to minimize the size of components on wafers; With advances in process technologies such as photolithography, lithography, etching, planarization, and heat treatment, the integration of components and circuits on integrated wafers is also increasing, and it also provides good process yields and product characteristics. In terms of current process technology, a single chip can already accommodate tens of millions, even hundreds of millions of components. The progress of process technology has also reduced the size of components on integrated circuits to sub-microns (sub-micr ο η) , Even within the size range of deep sub-micron to achieve the goal of higher accumulation. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the process of forming each film layer on the semiconductor substrate and defining the structure and pattern of each layer to form the required element structure through different materials and combinations and connection relationships, which is flat. The chemical process plays an extremely important role. Through the application of the planarization process, the undulating surface originally formed by different patterns and structures can be planarized by the planarization step, and a flat substrate surface can be provided to improve the uniformity of subsequent film formation. And the meaning of this paper applies the Chinese National Standard (CNS) A4 specification (210 > = 297 mm) 4 5 88 4 9 A7 B7 V. Description of the invention () Provide good flatness such as photolithography process or Accuracy and positioning accuracy during wafer alignment procedures. In addition, in the process of forming the conductor plug between the various connection layers on the substrate, the planarization process also has an extremely important application. After the conductive material fills the contact holes or connection holes of the dielectric layer, the planarization process is performed. The modified surface material removal method 'removes excess conductor material on the surface of the dielectric layer to leave separate conductor plugs in the dielectric layer. In terms of current semiconductor processes, one of the most frequently used planarization processes is a chemical-mechanical polishing (CMP) process. By adding a solution that has a reaction with the substrate surface material or film layer, , And a polishing liquid (s 1 urry; or grind slurry) composed of abrasive particles with abrasive effect, and provide movement relative to the wafer surface to simultaneously produce chemical and physical removal of the surface material of the substrate . In the current stage of application, chemical mechanical polishing is also widely used in sub-micron and deep sub-micron semiconductor processes because of its good uniformity, controllability, and surface flatness. In the large large scale integrated circuit (ULSI) stage, the most important planarization process in process application. '' Because the chemical mechanical polishing process treatment involves both chemical and physical removal of the surface material, the process is more sensitive to changes in temperature conditions. In traditional applications, the process temperature during chemical mechanical polishing becomes the control material Important factors for removal rate, grinding uniformity, and balance between chemical and physical mechanisms during grinding. This paper size applies to China National Standard (CNS) A4 (210x297 mm) (Please read the notes on the back before filling out this page) Binding ----- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 5 88 4 9 A7 ------ -B7 V. Description of the Invention () Among the chemical mechanical grinding equipment printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy, most of them have temperature control devices to control the process temperature. As shown in the first a), that is, a schematic view of the top view of the chemical mechanical polishing equipment. The area 10 marked in the figure is the area where the polishing platform is located, and the polishing head 14 is used to hold the wafer on the polished area. motion. Figure 1b is a schematic side view of a chemical mechanical polishing device. A polishing pad 12 is provided on the polishing platform 10 to provide a bearing surface for wafer polishing. Generally speaking, in the conventional chemical mechanical polishing equipment, the temperature control elements are all arranged in the polishing platform 10 and below the polishing pad 12, which is roughly located at the position indicated by the arrow in the figure, and uses the liquid The method of flow, or the method of setting heating coils or heaters, to achieve the desired purpose of increasing or decreasing the temperature, thereby controlling the temperature conditions of the process. The temperature can be monitored by a temperature sensing device provided inside the grinding table 10. However, the temperature control device of the above-mentioned chemical mechanical polishing equipment has many disadvantages. Because the polishing pad i 2 is generally made of polymer materials to provide good pressure and uniformity, but due to the characteristics of its material, its heat transfer efficiency is poor, so the temperature conditions at the polishing platform In actual polishing, the polishing pads 12 that are in contact with the wafer have a considerable difference. In terms of the current high efficiency of chemical mechanical polishing, the process usually takes a short time, usually about tens of seconds to hundreds of seconds. In such a short process time, Fan Gu Nei's temperature conditions of the polishing table 10 4 could not be transmitted to the polishing pad 12 in contact with the wafer in time, and the temperature sensing device in the polishing table ι could not immediately respond to the process temperature change. (This paper size applies to Chinese national standard (CNS > A4 size (210 X 297 cm)) (Please read the notes on the back before filling this page) ------------------- 4 Ministry of Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives 5 8S4 9 A7 ----- iZ_______ V. Description of the invention () Deviations in process temperature conditions also cause difficulties in temperature control. Purpose of the invention-and the purpose of the invention: To provide a Wudu control device for a chemical machine. Another object of the present invention is to provide a chemical mechanical polishing temperature control device 'to provide accurate and rapid temperature control during chemical mechanical polishing. Another object of the present invention In order to provide a chemical-mechanical polishing temperature control device 1 which can achieve the effects of real-time heating and temperature measurement, another object of the present invention is to provide a chemical-mechanical polishing temperature control device to reliably control and reflect the polishing of the wafer that contacts the actual polishing塾 Temperature conditions and changes increase the controllability of process temperature a. The temperature control device of chemical mechanical polishing in the present invention may mainly include: a grinding platform, a grinding head, a radiation heating device, and a temperature detection device; Contains a polishing pad; the polishing head is used to rotate the wafer to polish the wafer; the radiation heating device is arranged above the polishing pad to heat the polishing pad by means of thermal radiation; the temperature detection device is used for cockroach Measuring the temperature of the polishing pad β In a preferred embodiment, the above-mentioned wafer is on the polishing pad. The area is rotated for grinding, and the above-mentioned grinding platform provides the rotary motion of the polishing pad during the grinding process. The radiation heating device heats a part of the area on the polishing pad so that this area rotates into the polishing area in contact with the wafer. Before, heat to the required processing temperature. This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 male f) (Please read the precautions on the back before filling this page)-I--IIII < f (I ί 5 S84 g A7 _B7_ printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. In addition to the invention description, a chemical mechanical polishing temperature control device can also optionally be added with a cooling device and placed under the polishing pad. In order to provide the cooling pad effect in some processes. In a preferred embodiment, the chemical mechanical polishing temperature control device may include a polishing liquid supply device above the polishing pad to provide the polishing liquid to the surface of the polishing pad; a polishing pad adjustment device may also be added and disposed above the polishing pad. Part of the non-abrasive area is used to adjust the surface state of the polishing pad. Brief description of the drawing = The first a shows a schematic top view of a conventional chemical mechanical polishing equipment. Fig. 1b shows a schematic side view of a conventional chemical mechanical polishing equipment. Fig. 2a shows a schematic top view of a temperature control device for chemical mechanical polishing in the present invention. Figure 2b shows a schematic side view of the temperature control device for chemical mechanical polishing in the present invention. Detailed description of the invention: A temperature control device for chemical mechanical polishing is proposed in the present invention. By changing the temperature control method *, the heating of the polishing pad that contacts the wafer during actual polishing can be directly generated to provide accurate and fast chemical mechanical polishing. Temperature control to achieve the effect of real-time heating and temperature measurement ', and indeed control and reflect the paper size. Applicable to China National Standard (CNS) A4 (210 X 297 mm) -----------. H . I ----- 1 JI order! --- I 1-(Please read the notes on the back before filling this page) V. Description of the invention (A7 B7 Printed and printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Controlling the temperature change and increasing the controllability of the process temperature α See figure 2a, which is a schematic top view of the chemical mechanical polishing temperature control device in the present invention, and figure 2b shows the chemical machinery in the present invention. A schematic side view of the temperature control device for grinding; as shown in the second b order, the temperature control device for chemical mechanical grinding may mainly include: a grinding platform 20, a grinding head 22 (shown in the second a), and radiation heating Device 24, temperature测 装置 2 6. A polishing pad 28 is set above the polishing platform 20, and the polishing pad can use different elastic pad materials depending on the needs of different polishing processes, such as using a polymer compound to provide the wafer surface during polishing. Uniformity under force and pressure; the grinding head 22 is a rotating head holding the wafer to rotate the wafer attached to its lower end for grinding the wafer; the process of chemical mechanical polishing Among them, the wafer below the polishing head 22 is a part of the area on the polishing pad 28 that is rotated and polished, as shown by the arrow 30 in the figure, which is an example of its range during movement and polishing; In the process, the polishing table 20 provides a rotating motion that drives the polishing pad 28 as a whole to generate relative motion with the wafer surface to provide a better polishing effect. The radiation heating device 24 is disposed above the polishing pad 28, Heating the polishing pad 28 by means of thermal radiation * Not only can achieve the effect of directly heating the polishing pad 28, but also avoid direct contact with the grinding pad in motion 'reduction of polishing liquid pollution and polishing pad 28 Problems with the degree of freedom of movement 'In the preferred embodiment, the radiation heating device 24 can make a radiation heating lamp or infrared heating lamp with good heating characteristics. In a preferred example, the' radiation heating device ' This paper & degree applies the Chinese National Standard (CNS) A4 specification (210x297 mm) (谞 Notices on the back of the page. Please fill in this page again) Binding --------- 4 6 884 9 Economy Printed by the Intellectual Property Bureau Employee Consumer Cooperative A7 B7 V. Description of the invention () Place the 24 area on the heating pad 28, as shown in the second a picture of the ® domain 24a 'in this area in a counterclockwise direction 2. Before rotating into the grinding area that is in contact with the crystal garden, the surface of the grinding 塾 28 surface that actually contacts the wafer is heated to the required process temperature to achieve an immediate heating effect. The temperature detection device 26 is used to detect the temperature of the grinding grate 2 g, or the surface and the polishing liquid attached to it during grinding. In a preferred embodiment, the consideration of the setting of the temperature detection brake device 26 is used. The temperature measured in the heated area 24a and before entering the grinding area 30 is detected; the second & temperature measurement point 2 6 a shown in the figure is a preferred example of a temperature measurement area. In the preferred example, 'the temperature detection device 26 can apply a non-contact temperature detection device', such as using a Jiangwai line temperature measurement device, etc. The problem of the convenience of movement of the pad 28 and the accuracy of measuring the surface temperature can be provided by a non-contact temperature measurement method. In a preferred embodiment, the above-mentioned radiation heating device 24 and temperature detection device 26 can be disposed on the side wall or above the entire grinding machine, or can be added to the non-rotating part of the grinding head 22 (that is, The side edges of the base portion of the grinding head 22) can achieve the purpose and position effect set in the above-mentioned preferred examples. In addition to the above components, if it is necessary to respond to the temperature control requirements of different processes, the above-mentioned chemical mechanical polishing temperature control device may also include a cooling device 30, as shown in Figure 2b, 'the polishing disposed under the polishing pad 28 At the platform 20, the liquid pad can be used to cool the polishing pad 28 »This paper size is applicable to the National Solid Standard (CNS) A4 (210 x 297 mm) — — — — — III 1.) ^ --- -I--Order · --I 1 IIII (Please read the notes on the back before filling in this page) 4 δ 88 4 g Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () As shown in Figure 2a, in the application of a general system, the above-mentioned chemical mechanical polishing temperature control device may include a polishing liquid supply device 32 and disposed above the polishing pad 28 'to provide the polishing liquid required during the process to On the surface of the polishing pad 28, another type of temperature control can be achieved by the exchange and flow of the polishing liquid; it can also include a pad adjustment device 34 (pad cone), and a portion of the non- Grinding area for Section 28 of the surface state of the polishing pad. Therefore, with the chemical mechanical polishing temperature control device of the present invention, the radiation heating device 24 and the temperature detection device 26 can provide immediate and direct heating and temperature monitoring, to achieve the effect of instant heating and temperature measurement, and improve the grinding process. Controllability of temperature. For example, the chemical mechanical polishing process required to form a tungsten plug is taken as an example, and the temperature of the chemical mechanical polishing in the present invention is used to control the temperature of the chemical mechanical polishing. ° C), heating to the required better process temperature in a few seconds. In this example, it is about 50 ° C to 70 ° C, and can maintain the required temperature conditions at any time during the process, so that the grinding rate At the beginning of the process, it can be quickly increased to the required setting value 'increase the controllability of the process and the uniformity of grinding', and greatly reduce the time of the process, and increase the efficiency of mass production of wafers. The preferred embodiments are explained above, and are only used to help understand the implementation of the present invention, and are not intended to limit the spirit of the present invention. Those skilled in the art can understand the spirit of the present invention without departing from the spirit of the present invention. When it can be changed and retouched and the equivalent changes replaced, the scope of patent protection depends on the scope of the attached patent application and its equivalent fields. The paper size applies to the Chinese National Standard (CNS) A4 specification (2 10 X 297 mm) ---------- 7 --- install -------- order- ---- 1-^! (Please fill in this note first on the back of the ball) page)