A7 B7 457578 五、發明說明（1.) 本發明係關係一種晶圓拋光之方法及裝置，其具至少一 可相對晶圓之拋光元件。 此類之方法及裝置在半導體工業中廣為熟知。於目前習 知之拋光裝置中’用於抱光結構化晶圓之拋光元件，比要加 以拋光之晶圓有較大之尺寸，且在整個拋光過程中，整個要 加以拋光之晶圓表面與拋光元件接觸，並被之覆蓋，主要是 使用轉動之拋光盤，其直徑至少為晶圓直徑兩倍以上。因而 習知之裝置之尺寸主要是由所使用之拋光盤之數量及大小 決定。在另一種拋光裝置中，不用轉動拋光盤，而使用線性 運動之拋光元件，其表面則比要加以拋光之晶圓表面大許 多。此外，所有習知之裝置之共同點係為，晶圓是以要加以 拋光之側面向下進行加工。 由於拋光元件之大小就如拋光布之故，且與之相連之成 本’則必須長時間以同一拋光元件將許多晶圓拋光。不過， 拋光元件之拋光特性會隨時間發生變化，因而不能保證晶圓 拋光一定有均句之擴充β針對此點，過去發展出許多複雜及 昂貴之調理裝置，以調整拋光元件，使在拋光元件開始時， 能夠達到均勻之拋光特性。此外，這些習知之裝置都非常龐 大，由所使用之拋光盤數量及大小而定，因而生產成本很 高，因為這些通常都設置在昂貴之潔淨室内。在拋光時所使 用之拋光媒質，通常直接送至拋光之元件上，且大部分施加 之拋光媒質流失掉，甚至與晶圓根本沒接觸過，此因素使生 產成本更為增加。 以習知之裝置為基礎，本發明之任務係為，創作一晶圓 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4- -------I---i 裝-----丨訂---I-----级 (請先闉讀背面之注意事項再填寫本頁) 經濟部智慧財產局工消费合作社印製 A7 B7 45757 8 五、發明說明（2.) 拋光方法及裝置，其所須空間較小，且可進行經濟及均勻之 晶圓抛光。 根據本發明之任務，在一晶圓拋光方法，其具至少一與 晶圓可相對運動之拋光元件，其係以下述方式加以解決；晶 圓之表面範圍，以一作用表面較晶圓表面為小之拋光元件表 面加以拋光，且在拋光元件及晶圓間作相對運動，以使拋光 元件與晶圓表面之所有範圍均有接觸。藉在拋光元件上設計 之作用表面’亦即在拋光時拋光元件與晶圓接觸之，比要拋 光之表面為小之表面，拋光裝置之大小決定，是由要加以拋 光之晶圓大小及數量決定。此外’由於拋光元件之大小，即 使依經驗會出現晶圓之厚度變化，也可得到均勻之晶圓拋 光，因為只有局部之’亦即只有在作用表面下晶圓之厚度變 化才會於響抛光過程’因而抛光過程可局部配合表面條件在 拋光元件與晶圓間之相對運動，確保拋光元件與晶圓表面所 有的範圍均有接觸，以保證整個晶圓表面都有均勻之拋光。 此方法特別適合結構化半導體晶圓之拋光。 根據一較優先之發明實施形式，_晶圓及/或拋光於元件 之轉動’係以產生拋光所需之相對運動。元件最大轉速由元 件最大周邊速度決定，此最大周邊速度小於聲速β因拋光元 件之作用表面較晶圓表面為小，因此，拋光元件可以較目前 拋光元件為高之速度轉動，目前之拋光元件均比要加以拋光 之晶圓為大，拋光過程可藉此較高之轉速而改進及加速。 為使晶圓表面所有之範圍均被拋光元件拋過，拋光元件 最好平行晶圓表面運動，此時，拋光元件最好不要運動超出 本紙張尺度適用中國11家標準（CNS)A4規格（21D X 297公釐） (請先闉續背面之注意事項再填寫本頁) 裝--------訂： 4 經濟部智慧財產局員工消費合作社印製 457578 濟 部 智 慧 財 產 局 消 費 合 作 社 印 褽 B7 五、發明說明（3.) 晶圓之邊緣，以形成較少之邊緣缺陷，此邊緣缺陷在目前之 系統中，其晶圓邊緣範圍拋光對稱性係不存在，因為拋光元 件比要拋光之晶圓為大。 在另一發明實施形式中，至少部分晶圓不被拋光元件覆 蓋之表面取樣，以監控拋光過程。因拋光元件之作用表面只 覆蓋了要加以拋光晶圓表面之部分區域，此監控可以較簡單 方式做到。在自動化之拋光過程中，可依取樣結果終止拋光 程序。另外，經由此取樣，可決定晶圓要加以拋光表面之平 坦度。 最好控制拋光元件之位置及/或拋光元件與晶圓表面間 之壓力，尤其是與取樣結合，有目的的將局部之不平及結構 加以拋光。 在一較優先之發明實施形式中，晶圓在拋光時，其要加 以拋光之表面向上，如此，可改進與另一裝置之結合，在另 一裝置中’要處理之表面通常是向上。另外，在拋光時，在 晶圓上施加液體’以加速或支持拋光過程，因要拋光之表面 向上，液體可直接施加在晶圓上’液體消耗會減小，因為所 有液體均有目的的與晶圓要加以拋光之表面接觸到。在一發 明實施形式中’液體是經拋光元件送至晶圓上，如此，有目 的的在拋光元件及晶圓間造成液體薄膜。在另一實施形式 中’晶圓在拋光時，固定在充滿液體之槽中，因而以簡單方 式’得到良好及均勻之液體在晶圓上之分布。此液體最好包 含拋光媒質’其以化學及/或機械方式支持拋光。 在另一發明實施形式中，使用一包含拋光媒質之拋光元 ------------一裝--------訂---------^ <請先閱讀背面之注意事項再填寫本頁}A7 B7 457578 V. Description of the invention (1.) The present invention relates to a method and a device for polishing a wafer, which has at least one polishing element capable of facing the wafer. Such methods and devices are widely known in the semiconductor industry. In the currently known polishing devices, the polishing elements used to hold light structured wafers have a larger size than the wafers to be polished, and during the entire polishing process, the entire wafer surface to be polished and polished The components are contacted and covered, mainly by using a rotating polishing disc whose diameter is at least twice the diameter of the wafer. Therefore, the size of the conventional device is mainly determined by the number and size of the polishing discs used. In another polishing device, instead of rotating the polishing disk, a polishing element that uses linear motion has a surface that is much larger than the surface of the wafer to be polished. In addition, all conventional devices have in common that the wafer is processed with the side to be polished down. Because the size of the polishing element is like a polishing cloth, and the cost associated with it ', many wafers must be polished with the same polishing element for a long time. However, the polishing characteristics of the polishing elements will change over time, so there is no guarantee that the wafer polishing will have an even sentence expansion. In response to this, many complex and expensive conditioning devices have been developed in the past to adjust the polishing elements to Initially, uniform polishing characteristics can be achieved. In addition, these conventional devices are very large, depending on the number and size of the polishing discs used, so the production cost is high, because these are usually installed in expensive clean rooms. The polishing medium used in polishing is usually sent directly to the polished components, and most of the applied polishing medium is lost, or it has not even touched the wafer at all. This factor increases the production cost. Based on the conventional device, the task of the present invention is to create a wafer paper with a paper size applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -4- ------- I-- -i Pack ----- 丨 Order --- I ----- Class (Please read the notes on the back before filling this page) Printed by A7 B7 45757 8 Description of the invention (2.) The polishing method and device require less space and can perform economical and uniform wafer polishing. According to the task of the present invention, a wafer polishing method has at least one polishing element that can move relative to the wafer, which is solved in the following manner; the surface range of the wafer is based on an active surface being greater than the wafer surface as The surface of the small polishing element is polished, and relative movement is performed between the polishing element and the wafer, so that the polishing element is in contact with all areas of the wafer surface. By designing the working surface on the polishing element, that is, the polishing element is in contact with the wafer during polishing, the surface is smaller than the surface to be polished. The size of the polishing device is determined by the size and number of wafers to be polished. Decide. In addition, 'because of the size of the polishing element, even if the thickness of the wafer changes according to experience, uniform wafer polishing can be obtained, because only locally', that is, only the thickness change of the wafer under the active surface can be polished. Process' Therefore, the polishing process can partially match the relative movement of the surface conditions between the polishing element and the wafer to ensure that the polishing element is in contact with all areas of the wafer surface to ensure uniform polishing of the entire wafer surface. This method is particularly suitable for polishing structured semiconductor wafers. According to a preferred embodiment of the invention, the rotation of the wafer and / or the polishing element is to generate the relative motion required for polishing. The maximum speed of the component is determined by the maximum peripheral speed of the component. This maximum peripheral speed is less than the speed of sound β. Because the surface of the polishing component is smaller than the surface of the wafer, the polishing component can rotate at a higher speed than the current polishing component. It is larger than the wafer to be polished, and the polishing process can be improved and accelerated by this higher speed. In order to make all areas of the wafer surface be thrown by the polishing element, it is best to move the polishing element parallel to the surface of the wafer. At this time, it is best not to move the polishing element beyond this paper standard. Applicable to China's 11 standards (CNS) A4 specifications (21D) X 297 mm) (Please fill in the precautions on the back before filling out this page) Packing -------- Order: 4 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 457578 Printed by the Consumer Cooperative of the Intellectual Property Bureau of Ministry of Economic Affairs褽 B7 V. Description of the invention (3.) The edge of the wafer to form fewer edge defects. In the current system, the polishing symmetry of the wafer edge range does not exist, because the polishing component is more polished than The wafer is large. In another embodiment of the invention, at least a portion of the surface of the wafer not covered by the polishing element is sampled to monitor the polishing process. Since the active surface of the polishing element only covers a part of the surface of the wafer to be polished, this monitoring can be done in a simpler way. In an automated polishing process, the polishing process can be terminated based on the sampling results. In addition, the sampling can determine the flatness of the surface to be polished on the wafer. It is best to control the position of the polishing element and / or the pressure between the polishing element and the wafer surface, especially in combination with sampling, to polish the local unevenness and structure purposefully. In a preferred embodiment of the invention, when the wafer is polished, the surface to be polished is upward. In this way, the combination with another device can be improved. In another device, the surface to be processed is usually upward. In addition, during polishing, a liquid is applied to the wafer to accelerate or support the polishing process. Since the surface to be polished is upward, the liquid can be directly applied to the wafer. The liquid consumption will be reduced because all liquids have a The wafer to be polished touches the surface. In one embodiment of the invention, the 'liquid is sent to the wafer through the polishing element, so that a liquid film is intentionally created between the polishing element and the wafer. In another embodiment, the 'wafer is fixed in a liquid-filled groove during polishing, so a good and uniform distribution of the liquid on the wafer is obtained in a simple manner'. This liquid preferably contains a polishing medium ' which chemically and / or mechanically supports polishing. In another embodiment of the invention, a polishing element containing a polishing medium is used. ; Please read the notes on the back before filling this page}
經濟部智慧財產局員工消费合作社印製 457578 五、發明說明（4·) 件，使得不需再額外將媒質送入，在此例中，為活化拋光媒 質’最好是將另一液體水，送至晶圓上。 在另一發明實施形式中，晶圓表面以至少另一拋光元件 加以拋光。為降低拋光之拋光時間，最好將晶圓同時以至少 二掘光元件進行抛光。另外的方法為，晶圓以一定順序，以 至少二拋光元件加以拋光，此時，第一及第二拋光元件最好 有不同之拋光特性，以實現例如粗拋光及精拋光。 本發明之任務，係一用於晶圓拋光之裝置，其具至少一 拋光元件及一裝置，藉之晶圓及拋光元件可相對運動，解決 之方法為’拋光元件之作用表面較晶圓要加以拋光之表面為 小，因而得到上述已描述之優點》此裝置最好具一裝置，以 自動交換拋光元件，因為拋光元件尺寸較小，交換頻率較已 知之裝置為多。已知裝置之交換通常為手動。由於拋光元件 大小之故，在每次拋光後均進行交換，與已知之裝置相比， 不會產生較高之材料消耗。若在每次拋光後均進行拋光元件 交換，可得到特別加之拋光均勻性。 在另一發明實施形式中，裝置具一用於清洗及/或調理 拋光元件之裝置，以準備另一晶圓之拋光。 在一較優先之發明實施形式中，至少有另一具作用表面 之元件，其較要加以拋光晶圓之表面為小。另外具一裝置， 藉之此额外元件及晶圓可相對運動。若此額外元件是拋光元 件，可得到上面已說明之優點。在另一實施形式中，此額外 元件最好為一清洗元件，以在掘光後，不必將晶圓取出，即 直接進行清潔。 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐〉 <請先閱讀背面之注意事項再填寫本頁) 裳------—訂！Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 457578 V. Invention Description (4 ·), so that no additional media is required to be sent in. In this example, in order to activate the polishing medium, it is better to use another liquid Send to wafer. In another embodiment of the invention, the wafer surface is polished with at least one further polishing element. In order to reduce the polishing time of polishing, it is better to polish the wafer with at least two boring elements at the same time. Another method is that the wafer is polished with at least two polishing elements in a certain order. At this time, the first and second polishing elements preferably have different polishing characteristics to achieve, for example, rough polishing and fine polishing. The task of the present invention is a device for wafer polishing, which has at least one polishing element and a device, by which the wafer and the polishing element can move relative to each other. The solution is that the surface of the polishing element is larger than that of the wafer. The surface to be polished is small, so that the advantages described above are obtained. "This device preferably has a device to automatically exchange polishing elements, because the polishing elements are smaller in size and have more exchange frequencies than known devices. The exchange of known devices is usually manual. Due to the size of the polishing element, it is exchanged after each polishing step, and does not result in higher material consumption compared to known devices. If the polishing element is exchanged after each polishing, a special addition of polishing uniformity can be obtained. In another embodiment of the invention, the device has a device for cleaning and / or conditioning the polishing element to prepare for polishing another wafer. In a preferred embodiment of the invention, there is at least one component with an active surface which is smaller than the surface of the wafer to be polished. There is also a device whereby the additional components and the wafer can be moved relative to each other. If this additional element is a polishing element, the advantages described above can be obtained. In another embodiment, the additional component is preferably a cleaning component, so that the wafer does not have to be taken out after the digging, and the cleaning is performed directly. This paper size applies to Chinese national standards (CNS> A4 size (210 X 297 mm>) < Please read the precautions on the back before filling this page)
C 457578 A7 _ B7 玉、發明說明（5,） 在一特別優先之發明實施形式中，拋光元件是一圓盤形 之拋光布’其可容易及經濟的製造出’並特別適合自動交換。 在另一實施形式中，拋光元件是拋光滾輪，其沿一直線 與晶圓表面接觸。此拋光滾輪最好有一較晶圓直徑為小之長 度’使拋光滾輪不會運動超出晶圓邊緣，以防止邊緣效應及 邊緣缺陷。 在另一實施形式中，拋光元件為一封閉之拋光帶，其繞 驅動滾輪轉動，在另一實施形式中，拋光元件為一開放之拋 光帶，其從一存料滾輪展捲至接收滾輪。 在另一實施形式中，拋光元件係為一拋光環。 以下以一較優之實施例，以圖式更進一步說明本發明。 ' 各圖所顯示之内容如下： 圖一發明拋光裝置之上視圖， 圖二於圖一沿剖面線A-A之剖面圖， 圖三a-f依本發明不同之拋光元件之實施形式。 圖一顯示本發明拋光裝置1之上視圖，圖二顯示圖一拋 光裝置之一剖面圖。 經濟部智慧財產局貝工消费合作社印製 (請先閲讀背面之沒意事項再填寫本頁) 從圖二之剖面圖最容易看出此拋光裝置具一晶圓固持 件2’其具一軸4’及一支承盤5，以接收晶圓7 晶圓固持 件2可藉一未示出之裝置垂直移動，並可藉一未示出之裝置 對其中心軸B轉動。 晶圓7以適當方式，例如藉真空，如此之固定在支承盤 上’使要加以拋光之晶圓表面8面朝上。 晶圓固持件2在圖二中所示之位置至少部分是設置在 本紙張尺度適用中國@家標準（CNS)A4規格（210 * 297公釐） -8 - A7 B7 457578 五、發明說明（6· (請先閲讀背面之注$項再填寫本頁) 抛光裝置1之槽10内。晶圓固持件2之軸4以密封方式延 伸出槽10足底11。槽10之内部空間12充滿液體，例如拋 光媒質’其以化學方式支持晶圓7之拋光。藉上述晶圓固持 件2之垂直運動，可將晶圓7運動至處理位置，在此位置， 晶圓7要加以拋光之表面8由拋光媒質蓋住。在拋光後，晶 圓7可藉晶圓固持件2之垂直運動從拋光媒質中運動出。 此拋光裝置1另外具有第一及第二拋光單元15、16， 二者基本上有相同之構造’因而以後只說明拋光單元15， 此早元在圖二剖面圖中有顯示出。 經 濟 部 智 慧 財 產 局 員 拋光單元15具一垂直軸18，一水平延伸之拋光臂19， 一拋光頂20及一具拋光布21形成之拋光元件。軸18可經 一未示出之裝置調整高度，並可對轉軸C轉動，以下會再 加以詳細說明。拋光臂19之末端被固定在軸18之上，可與 軸垂直運動’並可對轉軸C轉動。在拋光臂19之自由末端， 亦即與軸18有距離之末端，裝有拋光頂20。拋光頂20具 一拋光布固持件23，其以適當方式，例如藉真空，將拋光 布21抓持在下端。拋光布固持件23藉一未示出裝置，可對 拋光頂20之轉軸轉動，此轉軸在圖一及圖二中與晶圓固持 件之轉軸B同軸。拋光布固持件依其大小，可以數千之轉 速轉動，要注意的是，拋光布固持件之圓周速度比聲速小。 消 费 合 作 社 印 製 從圖一及圖二中可看出，拋光布21之表面與要加以拋 光之晶圓7表面8接觸，而且較要加以拋光之晶圓7小的 多。如此，在拋光過程，晶圓7表面只有一部份被拋光布覆 蓋。 本紙張尺度適用中國國家標準（CNS)A4視格（210 * 297公爱） A7 B7 457578 五、發明說明（7·) 拋光裝置1具一未進一步說明之監控單元，其在晶圓7 拋光時’將未被拋光布21覆蓋之晶圓表面8之部分範圍’ 以光學取樣，以監控拋光結果’並決定拋光何時足夠，以自 動結束抛光過程。 拋光單元15及16各配置有清潔站25或26，及拋光布 交換單元28或29。清潔站25及26及一拋光布交換單元28 及29，主要是相同的’因而只說明配置給抛光單元15之裝 置。 在清潔站25内，在晶圓拋光後’拋光布21被清洗及調 理。當拋光布使用一定次數之拋光程序後’在拋光布交換單 元28内之拋光布21即自動被放鬆，並將一新的未使用過之 拋光布固定在拋光布固持件上。拋光布21之固定可經拋光 布固持件在拋光布不透氣之背面施加真空而做到。要放鬆抛 光布，將真空取消或在拋光布背面施加一正空氣衝量。 也可在拋光布21之背面設置黏贴薄膜，因而拋光布21 可黏在拋光布固持件上。拋光布21也可以機械方式夾緊在 拋光布固持件上，或以連接鉤固定在拋光布固持件上。 若拋光布21在每次拋光程序後均要加以更換，則可省 去清潔站25，或將清潔站25設計成拋光布取出站及拋光布 固持件之清潔站，此時，拋光布交換單元28就只設計成拋 光布接收單元。 雖然在圖一内可具二拋光單元15、16，也可設置單個 拋光單元或是多於二個拋光單元。在使用多個拋光單元時， 可將多單元同時啟動，以加速拋光程序。此外，也可依程序 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐） " -10 - (請先閲讀背面之注意事項再填寫本頁) 裝-------訂----- € 經濟部智慧財產局員工消费合作社印製C 457578 A7 _ B7 Jade, description of the invention (5,) In a particularly preferred embodiment of the invention, the polishing element is a disc-shaped polishing cloth 'which can be easily and economically manufactured' and is particularly suitable for automatic exchange. In another embodiment, the polishing element is a polishing roller that contacts the wafer surface in a straight line. The polishing roller preferably has a length smaller than the diameter of the wafer 'so that the polishing roller does not move beyond the edge of the wafer to prevent edge effects and edge defects. In another embodiment, the polishing element is a closed polishing belt that rotates around a driving roller. In another embodiment, the polishing element is an open polishing belt that is rolled from a stock roller to a receiving roller. In another embodiment, the polishing element is a polishing ring. In the following, a more preferred embodiment is used to further illustrate the present invention by means of drawings. The contents shown in the drawings are as follows: Fig. 1 is a top view of the polishing device of the invention, Fig. 2 is a sectional view along the section line A-A in Fig. 1, and Figs. 3a-f are different embodiments of the polishing element according to the invention. Fig. 1 shows a top view of the polishing apparatus 1 of the present invention, and Fig. 2 shows a sectional view of a polishing apparatus of Fig. 1. Printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the unintentional matter on the back before filling in this page). The cross section of Figure 2 is the easiest way to see that this polishing device has a wafer holder 2 'which has a shaft 4 'And a support disc 5 to receive the wafer 7 The wafer holder 2 can be vertically moved by a device not shown, and can be rotated about its central axis B by a device not shown. The wafer 7 is fixed to the support plate in a suitable manner, such as by vacuum, so that the surface 8 of the wafer to be polished faces up. The position of the wafer holder 2 shown in Figure 2 is at least partly set at the size of this paper. Applicable to China @ 家 standard (CNS) A4 specifications (210 * 297 mm) -8-A7 B7 457578 V. Description of the invention (6 · (Please read the note on the back before filling this page) Inside the groove 10 of the polishing device 1. The shaft 4 of the wafer holder 2 extends out of the groove 10 in a sealed manner. The inner space 12 of the groove 10 is filled with liquid For example, the polishing medium chemically supports polishing of the wafer 7. By the vertical movement of the wafer holder 2 described above, the wafer 7 can be moved to a processing position where the surface 8 of the wafer 7 is to be polished 8 Covered by the polishing medium. After polishing, the wafer 7 can be moved out of the polishing medium by the vertical movement of the wafer holder 2. The polishing device 1 additionally has first and second polishing units 15, 16 which are basically the same. It has the same structure as above, so only the polishing unit 15 will be described later. This early element is shown in the sectional view of Figure 2. The polishing unit 15 of the Intellectual Property Bureau of the Ministry of Economic Affairs has a vertical axis 18, a horizontally extending polishing arm 19, a Formed with a polishing top 20 and a polishing cloth 21 Polishing element. The shaft 18 can be adjusted in height by a device not shown, and can rotate the rotating shaft C, which will be described in detail below. The end of the polishing arm 19 is fixed on the shaft 18 and can be vertically moved with the shaft. It can be rotated to the rotating shaft C. At the free end of the polishing arm 19, that is, the end spaced from the shaft 18, a polishing top 20 is provided. The polishing top 20 is provided with a polishing cloth holder 23 in a suitable manner, such as by vacuum Hold the polishing cloth 21 at the lower end. The polishing cloth holding member 23 can rotate the rotating shaft of the polishing top 20 by a device not shown, and this rotating shaft is coaxial with the rotating shaft B of the wafer holding member in FIGS. 1 and 2. Polishing Depending on its size, the cloth holder can rotate at thousands of speeds. It should be noted that the peripheral speed of the polishing cloth holder is lower than the speed of sound. Printed by the consumer cooperative can be seen from Figures 1 and 2, the surface of the polishing cloth 21 It is in contact with the surface 8 of the wafer 7 to be polished, and it is much smaller than the wafer 7 to be polished. In this way, during the polishing process, only a part of the surface of the wafer 7 is covered by the polishing cloth. Standard (CNS) A4 Grid (210 * 297 public love) A7 B7 457578 V. Description of the invention (7 ·) The polishing device 1 has a monitoring unit that is not further explained. When the wafer 7 is polished, the wafer surface will not be covered by the polishing cloth 21 Part of the range 8 is 'optically sampled to monitor the polishing result' and decide when the polishing is sufficient to automatically end the polishing process. The polishing units 15 and 16 are each equipped with a cleaning station 25 or 26 and a polishing cloth exchange unit 28 or 29. Cleaning Stations 25 and 26 and a polishing cloth exchange unit 28 and 29 are mainly the same, so only the device allocated to the polishing unit 15 will be described. In the cleaning station 25, the polishing cloth 21 is cleaned and conditioned after wafer polishing. When the polishing cloth is used for a certain number of polishing procedures, the polishing cloth 21 in the polishing cloth exchange unit 28 is automatically relaxed, and a new, unused polishing cloth is fixed on the polishing cloth holder. The polishing cloth 21 can be fixed by applying a vacuum to the back of the polishing cloth through the polishing cloth holder. To relax the polishing cloth, remove the vacuum or apply a positive air impulse on the back of the polishing cloth. An adhesive film may also be provided on the back of the polishing cloth 21, so that the polishing cloth 21 can be adhered to the polishing cloth holder. The polishing cloth 21 can also be clamped mechanically on the polishing cloth holder, or fixed on the polishing cloth holder by a connecting hook. If the polishing cloth 21 is to be replaced after each polishing procedure, the cleaning station 25 can be omitted, or the cleaning station 25 can be designed as a cleaning station for the polishing cloth removal station and a polishing cloth holder. At this time, the polishing cloth exchange unit 28 is only designed as a polishing cloth receiving unit. Although two polishing units 15, 16 may be provided in Fig. 1, a single polishing unit or more than two polishing units may be provided. When using multiple polishing units, multiple units can be started simultaneously to speed up the polishing process. In addition, according to the procedure, the paper size can be applied to the Chinese National Standard (CNS) A4 specification (210 * 297 mm) " -10-(Please read the precautions on the back before filling this page) -Order ----- € Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
五、發明說明（8.) 經濟部智慧財產局員χ消費合作社印製 使用’此時，拋光單元之拋光布具不同之拋光特性，以進行 例如晶圓表面8之粗拋光及精拋光。另外，第二拋光單元 16可設計為清潔單元，此時不裝拋光布，而裝清潔元件。 以下藉一優先之發明實施形式說明拋光程序流程。 於起始位置時，拋光單元15及16從晶圓固持件2之範 圍轉出，晶圓固持件此時被舉升至槽10内液面之上。藉_ 未示出之操作裝置’晶圓7運動至晶圓固持件2上，對心， 被置於支承盤5上，而要加以拋光之表面8向上》在晶圓7 背面施加一真空’以使其穩定固持在支承盤上。 隨後’晶圓固持件2被降下，直到晶圓7之表面8被槽 10内之拋光媒質蓋住，同時，拋光單元15之拋光頂2〇旋 轉至晶圓7上。隨後，晶圓固持件2及拋光布固持件23轉 動。此時，拋光單元18被降下，直到拋光布21與晶圓7 表面8接觸’以開始適宜之拋光程序。同時，拋光單元15 對轉抽10如此轉動，使拋光布平行晶圓表面8運動，並擦 撫晶圓表面。此轉動運動如此之控制，使拋光布每次只運動 至晶圓邊緣，但都不超越邊緣，在拋光過程，拋光布21與 晶圓7表面8間之壓力加以控制，以得到希望之拋光結果。 在拋光過程中，晶圓7表面8上之部分區域以光學方式取 樣，以監控拋光程序之進行。當所希望的拋光結果到達後， 此拋光過程即自動停止’抛光單元15從晶圓固持件2之範 圍旋轉出去’拋光頂20旋轉至清潔站25上，掘光布從拖光 布固持件上取出，拋光布固持件被清洗。隨後，撤光頂旋轉 至拋光布交換單元上，以裝置新的抛光布。以光學方式對晶 -----！u裝—丨！丨訂----- f靖先聞锖背面之泛意事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） A7 B7 45757 8 五、發明說明（9.) 圓7表面8部分區域取樣並不一定需要，例如可以時間控 制，亦即在一固定之拋光時間後，停止拋光程序。另外，如 上面已加以說明，將拋光布加以清洗及調理，以用於下一次 的拋光。 在拋光過程結束後，且第一拋光單元15已從由晶圓固 持件2範圍旋轉出去，具與第一拋光單元不同之拋光特性之 第二拋光單元旋轉至晶圓固持件2上。此第二抛光單元進行 與第一拋光單元同樣之表面8之拋光。 在第二拋光過程結束後，晶圓7從槽10之拋光媒質中 舉出，並藉一未示出之操作裝置運走，以進行拋光裝置t 之後續處理。 除了上述之程序流程，也可如前所述，將第二拋光單元 以適當之設計，不作二次拋光而作清洗。若在拋光裝置内， 在拋光後要藉第二拋光單元進行清洗，而槽1〇内不裝拋光 媒質’最好改裝水。在此實施形式中，拋光媒質是設在拋光 布内，以化學方式支持拋光程序。 另外槽10也可以是空的，亦即充滿空氣，且在拋光過 程中，可經一未示出之裝置將拋光媒質送至晶圓上，以支持 拋光過程。此可藉例如一指向晶圓表面8之噴嘴做到，或拋 光媒質可藉拋光臂及拋光布送到晶圓上。 若是以第二拋光單元進行清洗，也可以相同方式將清洗 液體導至晶圓上。 圖三a-f顯示依本發明不同之拋光元件之實施形式。 圖三a顯示一圓形拋光布，其係用於圖—及圖二之裝置 本紙張尺度迺用中國國家標準（CNS)A4規格（210 X 297公釐） ，12- {請先閲讀背面之注§項再填寫本頁) 裝V. Description of the invention (8.) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, χ Consumer Cooperative. At this time, the polishing cloth of the polishing unit has different polishing characteristics, such as rough polishing and fine polishing of the wafer surface 8. In addition, the second polishing unit 16 may be designed as a cleaning unit. In this case, no polishing cloth is installed, but a cleaning element is installed. The following describes the polishing process flow with a preferred embodiment of the invention. In the initial position, the polishing units 15 and 16 are turned out of the range of the wafer holder 2, and the wafer holder is lifted above the liquid level in the tank 10 at this time. By the operating device not shown 'wafer 7 moves to wafer holder 2 and is centered and placed on support plate 5 while the surface to be polished 8 is upwards. "A vacuum is applied to the back of wafer 7' In order to stably hold it on the support plate. Subsequently, the 'wafer holder 2 is lowered until the surface 8 of the wafer 7 is covered by the polishing medium in the groove 10, and at the same time, the polishing top 20 of the polishing unit 15 is rotated onto the wafer 7. Subsequently, the wafer holder 2 and the polishing cloth holder 23 are rotated. At this time, the polishing unit 18 is lowered until the polishing cloth 21 is in contact with the surface 8 of the wafer 7 'to start an appropriate polishing process. At the same time, the polishing unit 15 rotates the counter-rotating pump 10 so that the polishing cloth moves parallel to the wafer surface 8 and rubs the wafer surface. This rotational movement is controlled so that the polishing cloth only moves to the edge of the wafer but does not exceed the edge. During the polishing process, the pressure between the polishing cloth 21 and the surface 8 of the wafer 7 is controlled to obtain the desired polishing result. . During the polishing process, a portion of the surface 8 of the wafer 7 is optically sampled to monitor the progress of the polishing process. When the desired polishing result is reached, the polishing process is automatically stopped. 'The polishing unit 15 is rotated out of the range of the wafer holder 2.' The polishing top 20 is rotated to the cleaning station 25, and the boring cloth is removed from the mopping cloth holder. Take out, the polishing cloth holder is cleaned. Subsequently, the light extraction top is rotated onto the polishing cloth exchange unit to install a new polishing cloth. Optically align the crystal -----! u equipment— 丨!丨 Order ----- fjing first heard the general meaning on the back of the page and then fill out this page} This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) A7 B7 45757 8 V. Description of the invention ( 9.) The sampling of 8 areas of the surface of the circle 7 is not necessarily required. For example, it can be time controlled, that is, the polishing process can be stopped after a fixed polishing time. In addition, as described above, the polishing cloth is cleaned and conditioned for the next polishing. After the polishing process is completed, and the first polishing unit 15 has been rotated out of the range of the wafer holder 2, the second polishing unit having a polishing characteristic different from that of the first polishing unit is rotated onto the wafer holder 2. This second polishing unit performs polishing of the same surface 8 as that of the first polishing unit. After the second polishing process is completed, the wafer 7 is taken out of the polishing medium of the tank 10, and is carried away by an operation device not shown for the subsequent processing of the polishing device t. In addition to the above-mentioned procedure, the second polishing unit may also be designed as described above, and cleaned without secondary polishing. If it is in the polishing device, it is necessary to clean it by the second polishing unit after polishing, but the polishing medium is not installed in the tank 10, and it is better to modify the water. In this embodiment, the polishing medium is provided in the polishing cloth to chemically support the polishing process. In addition, the groove 10 may be empty, that is, filled with air, and during the polishing process, a polishing medium may be sent to the wafer through a device not shown to support the polishing process. This can be done, for example, by a nozzle directed at the wafer surface 8, or the polishing medium can be sent to the wafer by a polishing arm and a polishing cloth. If the second polishing unit is used for cleaning, the cleaning liquid can also be directed to the wafer in the same manner. Figures 3a-f show different embodiments of polishing elements according to the present invention. Figure 3a shows a circular polishing cloth, which is used in the device of Figure-and Figure 2. This paper uses the Chinese National Standard (CNS) A4 specification (210 X 297 mm), 12- {Please read the back (Note § then fill out this page)
n t— ϋ ϋ n n I n I 經濟部智慧财產局員工消费合作社印製n t— ϋ ϋ n n I n I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
經濟部智慧財產局員工消费合作社印製 五、發明說明（10·) 内。 圖三b顯示一拋光滾筒，可固定於拋光臂上，並對長軸 轉動。此拋光滾筒以一直線與要加以拋光之晶圓7表面8 接觸。拋光滾筒30超出晶圓之周圍，除了轉動外，也可平 行於晶圓7之表面8運動。 圖三c顯示另一形式之拋光滾筒31，其長度較晶圓7 之直徑為小。此拋光滾筒31亦以適當方式固定在一拋光臂 上可對一轉軸轉動’並可平行於晶圓7之表面8運動。 圖三d顯示一封閉之拋光帶32，其係以滾筒33施以張 力。其中一個滾筒式設計成驅動滾筒，以產生拋光帶32繞 滾筒33之運動。拋光帶32如此圍繞滾筒33，使一作用範 圍’也就是與晶圓7表面8接觸之範圍，與晶圓7表面8 平行延伸。滾筒33以適當方式固定在拋光臂上，拋光臂允 許由拋光帶32及滾筒33組成之單元平行於晶圓7表面8 運動《此外’由拋光帶32及滾筒33組成之單元也可以固定 方式，亦即不能以運動方式設置。 圖三e顯示一開放式拋光帶35，從第一滾筒36捲出， 於第二滾筒37捲入。在滾筒36及37間之拋光帶35，由滾 筒38如此之導引’使得滚筒38間之抛光帶平行延伸於晶圓 7表面8上。 此由拋光帶35及滾筒36-38構成之組件，也可以適當 方式平行於晶圓7表面8運動。在拋光過程中，拋光帶35 在滾筒36及37間作線性運動，而晶圓7則作轉動。 圖三f顯示另一拋光元件之實施形式，此拋光元件係由 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公^ ~ -13- ----------— .1 裝！| 訂-----f 丨！氟 {請先閲讀背面之注意事項再填寫本頁) A7 B7 45757 8 五、發明說明（11.) 拋光環40構成，其可如圖一及圖二，固定在拋光頂20上。 所有在圖三内顯示之拋光元件有一共同點，拋光元件之 作用面’亦即與要加以拋光之晶圓7表面8接觸之表面，較 晶圓表面為小。 以上藉較優先之實施例說明本發明，但本發明並不限於 這些具體之實施例。例如，拋光元件可有其他之形式，例如 方形。除了圖一及圖二内所示之將拋光頂2〇固定在拋光臂 之方式，也可沿一軌道或沿拋光臂作線性運動之方式設置。 除了以光學式將局部區域取樣，以監控拋光過程，也^以聲 速方式、電磁及/或機械方式將表面局部區域取樣。 經濟部智慧財產局員Η消費合作杜印製Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. In the description of the invention (10 ·). Figure 3b shows a polishing drum that can be fixed on the polishing arm and rotates on the long axis. This polishing roller is in direct contact with the surface 8 of the wafer 7 to be polished. The polishing roller 30 extends beyond the periphery of the wafer and can be moved in parallel to the surface 8 of the wafer 7 in addition to rotation. FIG. 3 c shows another form of the polishing roller 31 having a length smaller than the diameter of the wafer 7. This polishing roller 31 is also fixed on a polishing arm in a proper manner so as to be rotatable about a rotation axis' and can be moved parallel to the surface 8 of the wafer 7. Fig. 3d shows a closed polishing belt 32 which is tensioned by a roller 33. One of the roller types is designed to drive the roller to generate a movement of the polishing belt 32 around the roller 33. The polishing tape 32 surrounds the roller 33 in such a way that a range of action, i.e., a range in contact with the surface 8 of the wafer 7, extends in parallel with the surface 8 of the wafer 7. The roller 33 is fixed on the polishing arm in an appropriate manner. The polishing arm allows the unit composed of the polishing belt 32 and the roller 33 to move parallel to the surface 8 of the wafer 7. In addition, the unit composed of the polishing belt 32 and the roller 33 can also be fixed. That is, it cannot be set in motion. FIG. 3e shows an open polishing belt 35, which is rolled out from the first roller 36 and is wound into the second roller 37. The polishing tape 35 between the rollers 36 and 37 is guided by the roller 38 'so that the polishing tape between the rollers 38 extends parallel to the surface 8 of the wafer 7. The assembly composed of the polishing belt 35 and the rollers 36-38 can also be moved in parallel with the surface 8 of the wafer 7 in an appropriate manner. During the polishing process, the polishing belt 35 moves linearly between the rollers 36 and 37, and the wafer 7 rotates. Figure 3f shows another implementation of the polishing element. This polishing element is based on the paper size and applies the Chinese National Standard (CNS) A4 specification (210 X 297) ^ ~ -13- ------------ .1 Install! | Order ----- f 丨! Fluorine {Please read the precautions on the back before filling this page) A7 B7 45757 8 V. Description of the invention (11.) The polishing ring 40 is composed as shown in Figure 1. And FIG. 2, it is fixed on the polishing top 20. All the polishing elements shown in Fig. 3 have one thing in common. The active surface of the polishing element, that is, the surface in contact with the surface 8 of the wafer 7 to be polished, is smaller than the wafer surface. The present invention has been described above with reference to preferred embodiments, but the present invention is not limited to these specific embodiments. For example, the polishing element may have other forms such as a square shape. In addition to the method of fixing the polishing top 20 to the polishing arm shown in Figures 1 and 2, it can also be set along a track or in a linear motion along the polishing arm. In addition to optically sampling local areas to monitor the polishing process, local surface areas are also sampled sonically, electromagnetically, and / or mechanically. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperation
緣' -------— I II— 裝------It 訂--- {锖先閱讀背面之注意事項再填寫本頁) -14 -Margin '-------— I II— Install ------ It Order --- (锖 Read the precautions on the back before filling this page) -14-