TW457562B - Plasma apparatus and plasma CVD film formation method - Google Patents

Plasma apparatus and plasma CVD film formation method Download PDF

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TW457562B
TW457562B TW089118420A TW89118420A TW457562B TW 457562 B TW457562 B TW 457562B TW 089118420 A TW089118420 A TW 089118420A TW 89118420 A TW89118420 A TW 89118420A TW 457562 B TW457562 B TW 457562B
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gas
plasma
sheet
electrode
supplied
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Kazue Takechi
Hiroshi Kano
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Nippon Electric Co
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline

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  • Chemical & Material Sciences (AREA)
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  • Plasma Technology (AREA)

Abstract

A gas supply duct line 9 for supplying hydrogen gas, rare gas, etc. to the surface of a substrate 7, is provided separately from a first electrode 2 serving as a first plasma source for supplying such material gases as silane such that it can also generate a plasma. Thus, a high quality non-single-crystal silicon film can be formed even at a low substrate temperature with energy provided to the film deposition surface by supplying active hydrogen radicals, ions and rare gas radicals and ion, etc. to the neighborhood of the substrate surface.

Description

457562 A7 B7___ 五、發明說明（1 ) WJB Μ Μ_ 本發明係有關一種電漿式化學氣相澱積（C V D )裝置Μ 及一種藉由利用電漿能量將薄膜形成於基板上的電漿式 C V D簿膜形成方法，且更特別的是有關一種電漿C V D裝置 Μ及一種用於形成矽型薄膜之電漿式C V D薄膜形成方法。 相關抟册說明 截至目前為止電漿C V D方法已廣泛地用於形成非單晶 矽膜，而非單晶矽膜係扮演著構成像薄膜電晶體和太陽 能電池之類裝置之材料的角色。此方法中，係藉由Κ高 頻放電分解烷氣而將非單晶矽膜澱積於基板上。電漿 CVD裝置有像無極放電式和ECR式等各種型式。不過，吾 人經常使用的電漿CVD裝置是一種雙極放電式，其中是 在有高頻電壓施加其上的第一電極與接地的第二電極之 間引致電漿放電。 不過於該雙極放電式電漿C V D裝置中，吾人必須將基 板溫度提高到大約3 0 0 °C Μ得到像非晶矽膜之類能夠用 於上述裝置的高品質非單晶矽膜。當吾人在大約2 0 0 °C 的基板溫度下完成薄瞑的形成時，會使膜内的氫濃度增 加，因此導致一具粗劣密度的矽膜。這種矽膜是無法用 於上述装置的。關於非结晶氮化矽膜或是像絕緣膜之類 的形成，則因低基板溫度膜形成而對薄膜品質造成的破 壞會更為明顯。 在此同時，當吾人能夠在大約2 0 0 °C那麼低的基板溫 度下形成高品質的非單晶矽膜，則引致了熱能的節約。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------^f.---------訂---------線 j . (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 457562 A7 經濟部智慧財產局員工消費合作社印製 B7__五、發明說明（2) 另外*吾人也能夠將塑膠之類的材料形成於基板上，因 此，拓展了在各裝置上的應用。 發明之扼要說明 本發明的一個目的是提供一種電漿c V D裝置與電漿式 C V D簿膜之形成方法，其中採用了 一種新的電漿控制方 法並允許吾人在比習知設計更低的基板溫度下形成各種 高品質的非單晶矽膜。 根據本發明的第一概念而提供了一種電漿C V D裝置K 便藉由利用矽烷氣而形成一非單晶砂瞑或是一非單矽化 合物膜，此方法包括的步驟有： -真空瓶（槽），係用來於其内導致放電的； -第一薄Η狀電極，係用以構成供應有高頻電力的第 一電漿源Μ便依牀灑形成將第一材料氣體引進該真 空瓶之內； -第二薄片狀電極，係依與該第一薄片狀電極呈面對 面關係的方式配置於該真空瓶内且含有一個用來支 持基板的機構；Κ及 -氣體供應機構，係配置於該第一與第二薄片狀電極 之間以便將第二衬料氣體引進該第二薄片狀電極表 面附近的區域之内。 根據本發明的第二概念而提供了一種電漿C V D装置以 便藉由利用矽烷氣而形成非軍晶矽瞑或是非單晶矽化合 物瞑，此方法包括的步驟有： -真空瓶（權），係用來於其内導致放電的； 一 4 一 . ‘---------^^'-------訂-------I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中Θ國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 4 5 7 5 6 2 Α7 Β7 五、發明說明（） -第一薄片狀電極，係用Μ構成供應有高頻電力的第 一電漿源Μ便依淋灑形式將第一材料氣體引進該舆 空瓶之內； -第二薄Η狀電極，係依與該第一薄片狀電極呈面對 面關係的方式配置於該真空瓶内且含有用來支持基 板的機構；以及 -氣體供應機構，係包含一含有許多氣體噴射埠的導 管且配置於該第一與第二薄片狀電極之間Μ便將第 二材料氣體引進該第二薄片狀電極表面附近的區域 之内。 根據本發明的第三概念而提供了 一種如申請專利範圍 第2項之電漿C V D裝置，其中係將該導管配置於第二薄 Η狀電極之上而使各氣體噴射坶均匀地配置於該基板上 方。 將該導管處理成圓形或方形的線圏狀形式。該導管是 一種金屬導管，而該金靥導管則構成了供應有高頻電力 的第二電漿源。該電漿C V D裝置也包括一天線機搆， 該天線機構係配置成該氣體供應機構之各氣體噴射埠附 近之區域內的第二電漿源。 根據本發明的第四概念而提供了一種電漿C V D裝置以 便藉由利甩矽烷氣而形成非單晶矽膜或是非單晶矽化合 物膜，此方式包括的步驟有： -真空瓶（槽），係用來於其內導致放電的； -第一薄片狀電極，包含磁場形成機構从便形成配置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I 1.1 — — — — ^ I I I I I I 曹訂 * ---I---I ^ (請先閱讀背面之注意事項再填寫本頁) 457662 A7 _B7五、發明說明（4) 經濟部智慧財產局員工消費合作社印製 且灑 對基 極表 J 置且灑 對基 管二之 場淋 面持 電極1>化 配場林 面持 導第域 磁依 圼支 狀電 裝矽 成磁依 呈支 的將區 肜便 極來 片狀 D 晶 形形便 極來 増便的 月：電用 薄片CV單 ；便月以.，電用 射以近 新源内狀有 二薄 漿非 的Κ新源内狀有 噴間附 的漿之片含 第二 電是 電構的漿之片含 體之面 内電瓶薄且 與第 種或 放機内電瓶薄且 氣極表 域一空一内 一該 一膜 致成域一空一内 多電極 區第真第瓶 第進 了矽 導形區第真第瓶 許狀電 之的該該空 該引 供晶：内場之的該該空 有片狀 近力進與真 於.體 提單有其磁近力進與真 含薄片 附電引依該 置氣 而非驟於含附電引依該 含二薄 面頻體係於 配料。念成步來包面頻體係於 包第二 表高氣，置 係材内概形的用，表高氣，置 係與第 極有料極配及，二之五而括係極極有料極配及，一該· 電應材電式以構第域第氣包，電電應材電式 Μ 構第進 狀供 一 狀方；機將區的烷式I)狀狀供 一 狀方；機該引 片成第片的構應便的明矽方 Π 片片成第片的構應於體. 薄構將薄係機供以近發用此瓶薄薄構將薄係機供置氣 該 Μ 式二關的體間附本利，空 一該Μ式二關的體配料。 於用形第面板氣之面據由膜真第於用形第面板氣且材内 - - 根藉物 -, , - 便 合 —---------- f.--------訂---------線/. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 457562 A7 經濟部智慧財產局員工湞費合作社印製 _B7__五、發明說明（5 ) 該磁場形成機構包含許多永久磁鐵或是電磁鐵，這些 磁鐵係配置於該第一薄片狀電極的表面上而使各相郯磁 鐵在極性上互為相反。該第二薄片狀電極包含一些溫度 控制機制及/或高頻電力施加機制。 根據本發明的第六概念而提供的一種電漿式C V D薄膜 彤成方法使用的是平行薄片狀電極型式的電漿C V D裝置 ' ,其中依淋灑形式由供應有高頻電力的該第一薄片狀電 極供應第一材料氣體，並於簿膜形成期間從一與該第一 薄片狀電極不同的氣體供應機構將第二材料氣體供應到 該第二薄Η狀電極的表面上。 根據本發明的第七概念而提供的一種電漿式C V D薄膜 形成方法使甩的是平行薄片狀電極型式的電漿C V D装置 ，其中依淋灑形式由供應有高頻電力的該第一薄片狀電 極供應第一材料氣體，而於薄膜形成期間從與該第一薄 片狀電極不同的氣體供應機構將第二材料氣體供應到該 第二薄片狀電極的表面上，且將用於形成電漿的第二電 漿源配置於該氣體供應機構之各氣體噴射埠附近的區域 之内，並於薄膜肜成期間藉由第二電漿源將由該氣體供 應機溝供應的氣體轉換成雛子或自由基。 根據本發明的第八《念而提洪的一種電漿式C V D薄膜 形成方法使用的是平行薄片狀電極型式的電漿C V D裝置 ，其中依淋灑形式由供應有高頻電力的該第一薄片狀電 極供應第一材料氣體，而於薄膜形成期間從一個與該第 一薄片狀電極不同的氣體供應機構將第二材料氣體供應 -7 " ί I 11 ^ ^ --------^---------_ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公:g ) 457562 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 到該第二薄片狀電極的表面上，且將用於形成電漿的第 二電漿源配置於該氣體供應懺構之各氣體噴射埠附近的 區域之内，並於薄膜形成期間藉由第二電漿源將由該氣 體供應機構供應的氣體轉換成離子或自由基，在於落在 1 0微秒到1 0 0毫秒的循環週_内將高頻電力供應到受到 開-關驅動的該第一薄片狀電極上。 供應到該第二電漿源上的高頻電力也會於相同的循環 時間内受到開-關的驅動，且與供應到該第一薄片狀電 極上的高頻電力呈1 S 0度相位差的關係。頻率為1 3 . 6 -5 0 0百萬赫之間的高頻電力被供應到該第一薄片狀電極 及/或該第二電漿源上。頻率為1 0萬赫到1 3 . 5 6百萬赫 之間的高頻電力供應到該第二溥片狀電極上Μ便對該第 二薄片狀電極進行加熱。供應到該第二電漿源上的高頻 電力也會於相同的循環時間内受到開-關的驅動，且與 供應到該第一薄片狀電極上的高頻電力呈1 8 0度相位差 的關係。藉由至少從該第一薄片狀機構引進矽烷氣、矽 烷氣和磷化氫氣體、或是矽烷氣和氨氣或氮氣且至少從 該氣體供應機構引進氫氣或是氫氣和稀有氣體而形成非 單晶砂膜、攙隣的非單晶矽膜、或是非單晶氮化矽膜。 本發明的這些及其他目的、特性、及優點將會因為Μ 下參照所附圖示對顯示用實皰例的詳细說明而變得更明 顯。 圖式之簡單說明 第1圖係用Κ顯示一種根據本發明第一實施例之電漿 * 8 - (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 457562 _B7_ 五、發明說明（7 ) CVD裝置的示意圖。 (請先閱讀背面之注意事項再填寫本頁) 第2圖係用从顯示一種根據本發明第二實胞例之電漿 C V D裝置的示意圖。 第3圖係用Μ顯示一種根據本發明第三實施例之電漿 C V D裝置的示意圖。 第4圖偽用Μ顯示一種根據本發明第四實胞例之電漿 C V D裝置的示意圖。 第5圆係用以顯示一種根據本發明第五實胞例之電漿 CVD裝置的示意圖。 第6圖係用Μ顯示一種根據本發明第六實施例之電漿 C D裝置的示意圖。 第7圖像用以顯示一種根據本發明第七實施例之電漿 C V D裝置的示意圖。 第8圖係用Μ顯示一種根據本發明第八實施例之電漿 C V D裝置的示意圖。 第9圖係用Κ顯示一種根據本發明第九實胞例之電漿 C V D裝置的示意画。 第1 0圖係用Μ顯示一種根據本發明第十實施例之電漿 C V D裝置的示意圖。 經濟部智慧財產局員工消費合竹社印製 第11 Α和1 1 8圖係用Μ顯示一種根據本發明第一電漿產 生方法的電壓波形圖。 第1 2 Α和1 2 Β圖係用Μ顯示一種根據本發明第二電漿產 生方法的電壓波形圖。 本發明較佳賁施例的詳细說明 -9- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4b?562 A7 _ B7__ 五、發明說明（8) 現在吾人將藉由赏例並參照各附圖以說明本發明的實 施例。 龄住甯敝例的銳B月 第1圖係用以顯示一種根據本發明第一實施例之電漿 C V D裝置的示意圖。參照該圖，符號1指的是用來於 其内導致放電的真空瓶（槽）。符號2指的是第一電極， 此電極是連接於用來供應高頻電力的第一高頻電源3 Μ 及第一適配電路4 (兩者都是配置於該真空瓶1外面）上 ，且連同這呰元件而構成第一電漿源。該第一電極2也 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） I----------i i Μ.--------訂•丨 n I I— I (請先閱讀背面之注意事項再填寫本頁) 増設。頻到子夠著高百 i 可提電 射持 8 高應離能接應56U 人在的 噴支器二供的人夠供 3CS吾且應 體夠熱第力上吾能地ii、G。 ，供 氣能加於電面。像效 Ϊ20膜力所 赫 的成的接頻表量與有〒在矽電中 5 造度連高 7 能率内 Μ 夠晶頻其 體建溫是將板的頻圍10能單高 ， 氣係板 e 由基當限範在人非何裡 料極基極藉該適下率落吾質任子 材。電制電。制供類頻率，品應洌 出10此控二上控提之的頻中高供的 噴統 ，夠第13夠上電間其例種上源 成系極能該路能面充之應此各 δ 漿 形應電有 ，電人表面率供。成極電 灑供二含般配吾積表頻-力彤電二 淋體第且 I 適 ，澱板限是電下二第 嵌氣是 72 二 上膜基上的頻度第之 來一的板極第 6 薄該類佳高溫該明 用第指基電及極在使之較的板於說 多了 6 的一 Μ 電便致子。間基要要 許成號上第12二 Μ 不離力之低需將 有構符其該源第量像生電赫的不有 含且 置像電該能在產頻萬下能供 經濟部智慧財產局員工消費合作社印製 457562 A7 B7 五、發明說明（ 經濟部智慧財產局員工消費合作社印製 氣9a氣的寸輸供 乍應-該。依漿第面 依漿第品 的埠二9尺應提6.If供漿進膜進電該表 進電該高 間射第線 6 供。.54 體電引矽引一從板。引一從成 之嗅該管極體的13JS氣烷等晶10第並基膜10第並形 6體有送電氣射 在Ifci一矽體單統該，該矽統該，而 和氣只輪二該噴 落ί第了 氣非系於漿進化系於漿 ， 2 多-該第從 6。 將M3該成有質應而電引氮應而電等 極許中。該是極力由1從形稀品供等的等晶供等的體 電有圖的於能電壓藉員由氣及高體氣成體單體體成氣 二含該製等可二的夠藉烷氣成氣氮構氣非氣氣構有 高 第 9 於繪上 5 第内能 ，矽氫形一 、體有質一氫體稀 與線。而質體該瓶人 上的將而第氣氣稀品第化氣及 一 管20式實氣朝空吾i 2出20，該氨合及高該隣合氣 第送統方有料 9 真 ，^極噴統内從、混氣成從和混氫 。 該輸糸視具材埠該構 P 電式系之由氣之氫形由氣之進 的於該應透而。射制結貞一形應域藉烷體將而藉烷體引 夠置。供依式管噴控的 Μ 第灑供區夠砂氣20，夠矽氣20 足配線體是形導體便述1Θ該淋體的能的些統內能的些統 Λ^ν 39 是是管氣 2 形的氣Μ所 的依氣近人出這系之人出這系 能的送二統矩寸的11上 ί 源進二附吾噴由應域吾嗔由應 可指輸第系呈尺 9 置如 漿引第面，式成供區，式成供 量 9 應成應是部線裝了 電10該表時形形體的外形形體 能號供構供成外管氣有 ο 一 統從板同灑内氣近此灑内氣 獎符體而體組的送排50第系並基 淋源二附 淋源二 ---------一 --------訂---------鐵 I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公釐） A7 4 5 7 5 6 2 __B7_ 五、發明說明（1C)) 質非單晶η -型矽膜。 第2圖係用Κ顯示一種根據本發明第二實陁例之電漿 C Ο裝置的示意圖。於該圖中，與如第1圖所示第一 實施例相同的部位是由相同的參考標碼標示出，且在此 吾人將適度地省略它們的重複說明。於此實施例中，用 來構成該第二氣體供應系統2 0的該氣體供應輸送管線9 是由導體製成的。該氣體供應輸送管線9是連接到配置 於該真空瓶1外面的第三高頻電源1 4和第三適配電路1 5 上，且連間瑄些元件而構成第二電漿源。用來構成該第 二氣體供應糸統2 0的該氣體供應輸送管線9係扮演著天 線的功能且於呈電感式耦合的電漿源內扮演的正像是線 圈一般的角色。雖則吾人為求簡要而Μ簡化的實線顯示 該氣體供應輸送管線9 ，實際上該氣體供應輸送管線9 是由如第1圖所示之導管構成的且含有一些氣體嗔射埠 9 a Μ便使材料氣體朝該基板噴出。於接跟著第2圖的各 附圈中，該氣體供應輸送管媿9也能夠Κ簡化的實腺加 Μ顯示。 該第一電漿源可能藉由依牀灑形式從該第一氣體供應 糸統1 0引進矽烷氣而形成矽烷電漿。同時，吾人可以由 該第三高頻電源1 4透過當作第二電漿源的該氣體供應輸 送管線9而供應頻率為]3 . 5 6與1 , 5 0 0百萬赫之間的高頻 電力，並從該第二氣體供應系統20將氫氣及稀有氣體等 引進該基板表面附近的區域之內，因此於該基板表面附 近的區域内選擇性地形成由這些氣體構成的電漿°將高 -1 2 - 本紙張尺度適用中國國家標準（CNS)A4規格（2]〇χ 297公釐） -----------裝------— —訂------I J (請先閱讀背面之江意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 457562 A7 B7 五、發明說明（ 11 經濟部智慧財產局員工消費合作社印製 該形 塍體¾之些供膜氣一之二附性並質20漿U體一 到下 供氣應域這量矽氮第體第面擇 ，品統 電伊氣例 嫕度 體合供區由能化和該氣該表選漿高系 之ME該施 供溫 氣混體的成的氮氣從些從板内電成應 例@的實 量板 一其氣近形當晶氨式這由基域的形供 施之色二 能基 第由二附地適單應形由藉該區成而體 實一7K角第 的低 該成第面續將非供灑成能進的構，氣 三所圈該 當一 從形該表接並質20淋形可引近體上二 第圖線同 適在 式而從板内，品統依而统等附氣面第 明 2 之如 將夠 形等由基域槳高糸由等系體面之表該 發卩源。 並能 灑氣藉該區電成應藉體該氣表源成由 本丨漿的 Μ ，人 淋氮 Μ 進的的肜供能氣，有板漿形夠 據J&電式 上吾 依、可引近成而體可氫外稀基電瞑能 根例二形 極， 由氣人等附構，氣也化此及該二薄也 種stfe第線 電此。藉氨吾體面體上二統瞵。氣於第該人 1W詨螺 二因瞋能、 ，氣表氣面第系和漿氫此該到吾。示本著圼 第。矽可氣時有板之表該應氣電將因自應。體顯。演是 該上晶源烷同稀基源成由供烷的20，來供膜氣 K1扮 9 到面單漿矽。及該漿形夠體矽成統内些量矽氫用意時線 應表非電進漿氣於電膜能氣進構糸之這能型化侥 U 同管 供成質 一引電氫此二薄也 一 引體應域由的η-磷圖的是送 力形品第10的將因第該人第源氣供區成當晶該 3 置異輸 電膜高該統成20，自到吾該漿合體的形適單應第 f 差應 頻簿成 系構統内來應。 電混氣近地將非供CV的供 I ^ f. ·裝-------訂--------一级 <請先閱讀背面之ii意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 457562 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 12 五、發明說明（） 般，吾人能夠藉由該第二電漿源形成的電漿，或是以供 愿到該第二電極上的高頻電力而將適當的能童供應到該 薄膜形成表面上，Μ在低溫下形成各種高品質非單晶砂 膜。 為了得到具有均匀而令人滿意之品質的矽膜，較佳的 是依均勻方式將氣體從該第二氣體供應系統2 0烘應到該 基板上。關於此點，特別是當各氣體噴射埠9 a都是向下 指時，吾人期望的是儘可能使均勻地配置於該基板之上 。由於本實施例中採用的是摺#螺旋形（螺線形）的氮體 供應輸送管線Μ取代如第1和2圖所示圼方形迴路形式 的該氣體供應輸送管線9 ，故依均勻方式將氣體供應到 該基板上，Μ致能夠於該基板表面附近的區域內由該第 二電漿源形成更均勻的電漿。因此，吾人能夠得到具有 更高品質的非單晶矽膜。 該氣體供應輸送管線除了之前第一到第三實施例中已 說明的方形迴路或是螺線形式之外也可能是各種適合的 形式；例如吾人也能夠採用圓形迴路、圓形螺線迴路、 彎曲形、Μ及梳狀形式的氣體供應輸送管線。此外，各 氣體噴射埠9 a可能不是向下指的，但是吾人能夠選擇各 種適當的方向，如交替地朝左和朝右K及向下傾斜等方 向〇 第4圖係用Μ顯示一種根據本發明第四實施例之電漿 CVD裝置的示意圖。本實施例與如第1圖所示之第一實 胞例的差異是該第一電極2於其背部表面上提供有許多 ^ 1 4 ~ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） —^---------《^--------訂---------線 (請先閲讀背面之注意事項再填寫本頁> A7 457562 _B7__ 五、發明說明（U ) 新月形磁場形成用磁鐵1 6。這些磁鐵在該第一電極2表 面上的配置方式是使各相郯磁鐵具有相反的平面極性， 且因此在該第一電極底下形成均匀的新月形磁場。該新 月形磁場會導致該第一電極底下區域内之電漿濃度肜成 一像材料氣體或是矽烷氣之類的高濃度電漿，因此大幅 地提高了該材料氣體或是矽烷氣的溶解度且大幅地提高 了其薄膜形成速率。除此之外，由於基板是與該高濃度 電漿區間隔開的，故不致使該薄膜澱積表面因為該電漿 内的高能帶電粒子而受到破壞。此外，藉由從該第二氣 體供應系統2 0朝該基板表面引進像氫氣及/或稀有氣體 之類的氣溫，使吾人能夠適當地活化該薄膜澱積表面。 因此，吾人能夠在低溫下形成各種高品質非單晶矽膜。 第5圖係用K顯示一種根據本發明第五實施洌之電漿 C V D裝置的示意圖。本實腌例與如第2圖所示之實皰例的 差異是該第一電極2於其背部表面上提供有許多新月形 磁場形成用磁鐵1 6。這些磁鐡是吸附在該第一電極2的 表面上而使各相鄰磁鐵具有相反的平面極性，且因此在 該第一電極底下形成均匀的新月肜磁場。該新月形磁場 會導致該第一電極底下區域内之電漿濃度形成像材科氣 體或是矽烷氣之類的高濃度電漿，因此大幅地提高了該 材料氣體或是矽烷氣的溶解度。除此之外，由於基板是 與該高濃度電漿區間隔開的，故不致使該薄膜澱積表面 因為該電漿内的高能帶電粒子而受到破壞。 此外，藉由從該第二氣體供應系統2 0朝該基板表面引 _ 1 5 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —τ---------ί 裝--------訂----------缓 (請先閱讀背面之;i意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 457562 A7 Άί _B7 14五、發明說明（） 經濟部智慧財產局員工消費合作社印製 内有化高 槳三表例能氫。16鐵馱由 附鐵 部而吾近 間稀活種 電第側施也由膜織磁間自 面磁置緣低，附 時、地各 之己内簧人成薄磁電或場 表鄰:ie邊減應面 2 Π1Ε 一 子當成 例 是本吾形的用用/ 磁 極相tfcja之的效表 同離適形 施 h 或於，源勻成使及形 電各 — 極度場極 在氫夠下 實 U 面。外漿均形。力月。一。可電濃磁電 且、能溫 六 表1之電更場的能新質第斯Mi該漿種一 ，基人低 第 W 部鐵應二到磁成知的品該高&Ϊ小電這第 體由吾在 明如背磁效第得形形感成膜於千 4 減内了該 氣自使夠 發 w 的用的該夠月而的形簿場數 h 夠位有於 的氫，能 本 — 2 成同由能新鐵動求其磁到!θ'能部。成 類生等人 據胞極形相內致該磁流需或該十Sr人緣度形 之產子吾 根 電場例之 Μ ，電流依 / ，數0!15吾邊濃漿 體地離， 種一磁施域，中是電Μ及中是'r0，制漿電 氣性體此 一。第形實區漿例或變而率例度It如抑電烷 有擇氣因 示 該月五的電施鐵改流速施強1S例K面矽 稀選有。。顯圖於新第近勻實磁由電成實當適；隔平度 或源稀面膜M意是多與附均六久藉閉形六適 4 上間的濃 / 槳、表矽用示異許到面更第永夠II膜第的3^隔的勻高 及電基積晶係的差有得表的到由能和薄到內2-間間均 一 氧二由澱單 _ϊδ的供了 板成四藉是開其四域W的鐡更將 氫第自膜非 6 例提除基構第是點打制第區是勻磁一要 像該體薄質第0施上-該等於能優地控於之間均內到主 進由氣該品CV實面中夠氣 可的性地 近之於份得人 --：---------{ I--------訂---------線 I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 457562 A7 _B7 五、發明說明（15 ) 經濟部智慧財產局員工消費合作社印製 而 度澱予在 夠 漿開第17第 漿 演含各吾的 , 濃膜給夠 能 電-S分。線電¾扮9 從，同 區高薄量能 人 之i-之17天三 之 1 了線 5 中相 賭供該能人。吾。例與線該第 例 Θ 供管體構例 電 提由將吾膜則膜胞 且天於施 U 提送氣結胞 度 會藉基 -矽應各實 h 下的接二 窩iTif上輸料此蒉 濃。源且由此晶效成七SP底色連第 八所之應材於七 高來漿，自因覃場形第 9 角而與 第19 供使次第 一 出電基和。非磁率明 D 線源路到 明i7線體此再到 成佈二由子基質各速發 D 管漿電得 發Dm管氣因。五 形散第自離由品了 倍本^:送.電配夠。本^ 送該 ，9第 上區該和的自高有五據_輸二適能磨據 0 輸 。93線和 面該是子等各種，到根 U 應第三人效根较應17埠管 、 表從或離體的各中三種 供著第吾的種Sr供線射送三 板基統的氣要成洌的一 體演 一 ，同 一1:®體天噴輸第 基由糸等有重形施例示。氣扮由中相示本氣的體該、 該自應體稀很下實施顯1°該 一經置例顯。該色氣向二 圖 圄 於烷供氣和言度六實ΚΞ 在了 是配陁Mtt、於角的噴第 便矽體有氣而溫第三用一^是供14此實用意是源指98與 M的氣稀氫成板到第係 h異提源於六係 W 異槳内埠到 内勢二和上形基四到圖16差上電次第圖Θ 差電向射得 域優第氣面膜的第 一 7H 的置頻再和的二些噴夠。 區致該氫表薄低於第第 D 例位高。"第 D 例第一體能應 的.引 之積對較 ΜCV施的三上五CV施著有氣人效 -----------^^------"*1| 訂---------線一 i (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） A7 457562 _B7___ 1 6 五、發明說明（） 於第七和第八實施例中，該天線1 7不一定是空心的。 同時，該天線17的肜吠並不受限於方形的，且吾人也能 夠依需求採用任何像圓形、多邊形、Μ及圓形的多面螺 線形之類的其他形狀。 第9圖係用以顯示一種根據本發明第九實施例之電槳 CVD裝置的示意圖。本實施例與如第7圖所示之第七 實施例的差異是於該第一電極2的背部表面或是内側表 面上提供有許多新月形磁場形成用磁鐵1 6。該新月形磁 場會將電漿濃縮地形成於該第一電極底下的區域內，因 此形成了像材料氣體或是矽烷氣之類的高濃度電漿且大 幅地提高了該材料氣體或是矽烷氣的溶解度。此外，由 於基板是與該高濃度電漿區間隔開的，故不致使該簿膜 澱積表面因為該電漿內的高能帶電粒子而受到破壞。因 此，吾人能夠Μ比第t實腌例更高的速率形成各膜。 第1 0圖係用K顯示一種根據本發明第七實施例之電漿 C V D裝置的.示意圖。本簧施例與如第8圖所示之第八 實施例的差異是於該第一電極2的菏部表面或是内側表 面上提供有許多新月形磁場形成用磁鐵1 6。再次於此例 中，吾人能夠以比第八實陁例更高的速率形成各_。 第11 A和11 B圖係用Μ顯示一種根據本發明第一電漿產 生方法的電壓波形圖。 於上述第二、第三、第五、第六、和第七實施例之電 漿C V D裝置中，該第一和第二電漿源是獨立地受到驅動 。於第一電槳產生方法中，該第二電槳源是受到連續的 -18~ 本紙張尺度递用中國國家標準（CNS)A4規格（21〇χ 297公t ) 1 t I I I---{ 裝---I---—訂--------* 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 457562 A7 B7 五、發明說明（ 17 間 之 秒 毫 人 * 五口 體 ，氣 中料 例材 c t 勺 1 t & 到。類 秒動之 微驅烷 10關像 於-進 是開引 源地10 漿性統 電馱糸 1 間應 第到供 該受體 有内氣 只期一 且週第 , 環該 動循從 驅的係 膜中 0 ^ ^ 晶 0 0 0 和 ϋΙΙ 氣 — 種 質 氫 1 這 Dn 高 引 <、、至 ο 方 2會。 Msfe ，'基 3 异由角 應 的 自 供 要 3 體 Η 重 氣 S 著 二 為演 第認扮 該人中 從吾用 並 作 等 體 成 形 的 人 吾 開 的 性 駄。 間ί=Μ θ Ξ帛 由 進 究 自 源 研 3 漿 Η 的 電si人 該的明 對内發 由漿明 藉電發 夠烷本 能矽據457562 A7 B7___ V. Description of the invention (1) WJB Μ Μ_ This invention relates to a plasma chemical vapor deposition (CVD) device M and a plasma CVD using a plasma energy to form a thin film on a substrate. The film forming method, and more particularly, relates to a plasma CVD apparatus M and a plasma CVD thin film forming method for forming a silicon type thin film. Description of related brochures So far, the plasma C V D method has been widely used to form non-single-crystal silicon films, and non-single-crystal silicon films have played a role of forming materials such as thin-film transistors and solar cells. In this method, a non-single-crystal silicon film is deposited on a substrate by decomposing an alkane gas at a high frequency of K. There are various types of plasma CVD devices, such as electrodeless discharge and ECR. However, the plasma CVD device that we often use is a bipolar discharge type, in which a plasma discharge is induced between a first electrode to which a high-frequency voltage is applied and a second electrode that is grounded. However, in this bipolar discharge plasma C V D device, we must raise the substrate temperature to about 300 ° C to obtain a high-quality non-single-crystal silicon film such as an amorphous silicon film that can be used in the above device. When we complete the formation of thin ridges at a substrate temperature of about 200 ° C, the hydrogen concentration in the film will increase, thus resulting in a silicon film with a coarse density. This kind of silicon film cannot be used for the above devices. Regarding the formation of an amorphous silicon nitride film or an insulating film, the deterioration of the film quality due to the formation of a low substrate temperature film is more pronounced. At the same time, when we were able to form a high-quality non-single-crystal silicon film at a substrate temperature as low as about 200 ° C, it resulted in thermal energy savings. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------- ^ f .--------- Order ----- ---- Line j. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 457562 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics B7 ) In addition, I can also form materials such as plastic on the substrate, so the application on various devices has been expanded. SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma c VD device and a plasma CVD film forming method, in which a new plasma control method is adopted and allows us to design a lower substrate than the conventional one. Various high-quality non-single-crystal silicon films are formed at temperature. According to the first concept of the present invention, a plasma CVD device K is provided to form a non-single crystal sand or a non-single silicon compound film by using silane gas. The method includes the following steps:-a vacuum bottle ( Trough), which is used to cause a discharge therein;-a first thin Η-shaped electrode, which is used to constitute a first plasma source M supplied with high-frequency power, is formed on the bed to introduce the first material gas into the vacuum Inside the bottle;-a second sheet electrode, which is arranged in the vacuum bottle in a face-to-face relationship with the first sheet electrode, and contains a mechanism for supporting the substrate; κ and-a gas supply mechanism, which is configured Between the first and second sheet-like electrodes so as to introduce a second lining gas into a region near the surface of the second sheet-like electrodes. According to the second concept of the present invention, a plasma CVD apparatus is provided to form a non-military crystalline silicon hafnium or a non-single-crystal silicon hafnium by using a silane gas. The method includes the following steps: a vacuum bottle (right), It is used to cause discharge in it; one 4 one. '--------- ^^' ------- order ------- I (Please read the note on the back first Please fill in this page again on this page) The standard of this paper is applicable to Θ National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economy 4 5 7 5 6 2 Α7 Β7 V. Description of the invention () -A first sheet-shaped electrode, which uses M to form a first plasma source M that is supplied with high-frequency power, and introduces a first material gas into the hollow bottle by a shower; It is arranged in the vacuum bottle in a face-to-face relationship with the first sheet electrode and includes a mechanism for supporting a substrate; and a gas supply mechanism, which includes a conduit containing a plurality of gas injection ports and is disposed on the first And the second sheet electrode, the second material gas is introduced into the surface of the second sheet electrode Within the nearby area. According to the third concept of the present invention, there is provided a plasma CVD apparatus as described in the second item of the patent application, wherein the conduit is arranged on the second thin Η-shaped electrode so that each gas injection 坶 is uniformly arranged on the Η Above the substrate. The catheter is processed into a round or square wire-like form. The tube is a metal tube, and the gold tube constitutes a second plasma source that is supplied with high-frequency power. The plasma C V D device also includes an antenna mechanism which is configured as a second plasma source in the area near each gas injection port of the gas supply mechanism. According to the fourth concept of the present invention, a plasma CVD device is provided to form a non-single-crystal silicon film or a non-single-crystal silicon compound film by sloshing silane gas. The method includes the following steps:-a vacuum bottle (tank), It is used to cause discharge in it;-the first sheet-like electrode, including the magnetic field forming mechanism, is formed from this configuration; the paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) I 1.1 — — — — ^ IIIIII Cao Ding * --- I --- I ^ (Please read the precautions on the back before filling this page) 457662 A7 _B7 V. Description of the invention (4) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed The base electrode J is placed and sprinkled on the field tube surface electrode 1 of the base tube 2 > The field distribution forest surface is supported by the first magnetic field and the electric field is silicon. D The crystal form is extremely convenient for the month: electric sheet CV sheet; the month of the month. The electricity is shot near the new source with two thin pastes. The new source has a paste with a spray attached to the second chamber. The in-plane battery containing the body of the slurry is thin and the same as the first The battery inside the machine is thin and the air electrode surface area is empty, one inside, one, and one membrane is formed into one area, one is empty, and the multi-electrode area is inserted into the silicon-conducting area, and the empty space is formed. The induction crystal: in the inner field, the space has a sheet-like approaching force and a true force. The body bill of lading has its magnetic approaching force and a thin sheet with an electric charge. The two thin-surface frequency systems contain ingredients. Read the steps to include the surface frequency system on the second table, including the high profile of the material, and use the general shape of the system material. The table is highly compatible with the first material, and the second and fifth are very suitable. First, the electric material should be constructed in the first field, and the electric material should be produced in the first place. The machine should be provided in the shape of the first stage. The thin-film structure of the first piece is made of plain silicon square. The thin-film structure is made of the first piece of body. The thin structure will supply the thin system to the hair. Use this bottle of thin structure to supply the thin system to the gas. The body of the Guan is attached with profits and benefits, and the body ingredients of the M-style two guan are empty. According to the surface of the gas in the shape of the surface, the film is really in the shape of the gas in the shape of the surface.--Root Borrow-,,-Then fit ------------ f .---- ---- Order --------- Line /. (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 457562 A7 Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs _B7__ V. Description of the invention (5) The magnetic field forming mechanism includes many permanent magnets or electromagnets, which are arranged on the surface of the first sheet electrode. Reverse the polarity of each phase magnet. The second sheet electrode includes some temperature control mechanism and / or high frequency power application mechanism. A plasma-type CVD thin film forming method provided according to the sixth concept of the present invention uses a plasma-type CVD apparatus of a parallel sheet electrode type, wherein the first sheet is supplied with high-frequency power according to a shower pattern. The first electrode is supplied with a first material gas, and a second material gas is supplied to a surface of the second thin electrode from a gas supply mechanism different from the first sheet electrode during the film formation. According to a seventh concept of the present invention, a plasma-type CVD thin film forming method is provided. The plasma-type CVD apparatus of a parallel sheet-like electrode type is formed, wherein the first sheet-like shape is supplied with high-frequency power according to a shower pattern. The electrode supplies a first material gas, and a second material gas is supplied to the surface of the second sheet electrode from a gas supply mechanism different from the first sheet electrode during the film formation, and the The second plasma source is arranged in the area near each gas injection port of the gas supply mechanism, and the gas supplied from the gas supply machine trench is converted into a seed or a radical by the second plasma source during the film formation. . According to the eighth aspect of the present invention, a plasma CVD thin film formation method uses a parallel sheet electrode type plasma CVD apparatus, wherein the first sheet is supplied with high-frequency power in a shower mode. The first electrode is supplied with the first material gas, and the second material gas is supplied from a gas supply mechanism different from the first sheet electrode during film formation. 7 " I I ^ ^ -------- ^ ---------_ (Please read the notes on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm: g) 457562 Α7 Β7 Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau V. Description of the invention () on the surface of the second sheet electrode, and a second plasma source for forming a plasma is arranged near each gas injection port of the gas supply structure Within the region of the film, and the gas supplied by the gas supply mechanism is converted into ions or radicals by the second plasma source during the formation of the film, which will fall within a cycle period of 10 microseconds to 100 milliseconds. High-frequency power is supplied to the On the first sheet electrode. The high-frequency power supplied to the second plasma source is also driven on-off within the same cycle time, and is 1 S 0 degrees out of phase with the high-frequency power supplied to the first sheet electrode. Relationship. High-frequency power having a frequency between 13.6 and 500 MHz is supplied to the first sheet electrode and / or the second plasma source. The second sheet-shaped electrode is heated by supplying high-frequency power with a frequency between 100 MHz and 13.56 million Hz to the second diaphragm electrode. The high-frequency power supplied to the second plasma source is also driven on-off in the same cycle time, and is 180 degrees out of phase with the high-frequency power supplied to the first sheet electrode. Relationship. A non-monolithic gas is formed by introducing at least silane gas, silane gas, and phosphine gas, or silane gas and ammonia gas or nitrogen gas from at least the first sheet-like mechanism and introducing hydrogen gas or hydrogen gas and rare gas from the gas supply mechanism. Crystal sand film, adjacent non-single-crystal silicon film, or non-single-crystal silicon nitride film. These and other objects, features, and advantages of the present invention will become more apparent from the detailed description of examples of display cases with reference to the accompanying drawings. Brief description of the drawing Figure 1 shows a plasma according to the first embodiment of the present invention using KK * 8-(Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) A7 457562 _B7_ 5. Description of the invention (7) Schematic diagram of the CVD device. (Please read the precautions on the back before filling this page.) Figure 2 is a schematic diagram showing a plasma C V D device according to a second example of the present invention. Fig. 3 is a schematic diagram showing a plasma CVD device according to a third embodiment of the present invention using M. Fig. 4 is a schematic diagram of a plasma CVD device according to a fourth example of the present invention. The fifth circle is a schematic diagram showing a plasma CVD apparatus according to a fifth example of the present invention. Fig. 6 is a schematic diagram showing a plasma CD device according to a sixth embodiment of the present invention using M. The seventh image is used to show a schematic diagram of a plasma C V D device according to a seventh embodiment of the present invention. Fig. 8 is a schematic diagram showing a plasma CVD device according to an eighth embodiment of the present invention using M. Fig. 9 is a schematic drawing showing a plasma C V D device according to a ninth real cell example of the present invention using K. Fig. 10 is a schematic diagram showing a plasma CVD device according to a tenth embodiment of the present invention using M. Printed by Hezhu Society, Employees' Bureau of Intellectual Property, Ministry of Economic Affairs. Figures 11A and 1 18 are voltage waveform diagrams showing a first plasma generation method according to the present invention with M. The 12th A and 12B diagrams are voltage waveform diagrams showing a second plasma generation method according to the present invention with M. Detailed description of the preferred embodiment of the present invention-9- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 4b? 562 A7 _ B7__ V. Description of the invention (8) Now I will borrow Embodiments of the present invention will be described with examples and with reference to the accompanying drawings. Fig. 1 is a schematic diagram showing a plasma C V D device according to the first embodiment of the present invention. Referring to the figure, the symbol 1 refers to a vacuum bottle (tank) used to cause discharge therein. The symbol 2 refers to a first electrode, which is connected to a first high-frequency power source 3M for supplying high-frequency power and a first adapter circuit 4 (both are disposed outside the vacuum bottle 1), A first plasma source is formed together with this element. The first electrode 2 also conforms to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) on this paper scale. I ---------- ii M .-------- Order • 丨n II— I (Please read the notes on the back before filling out this page) Setting. The frequency is enough to reach high hundred i can raise electricity radio support 8 high should be able to meet 56U people in the sprinkler support two people who can provide 3CS and should be hot enough to be able to ii, G. , The air supply can be added to the electrical surface. It has an effective frequency measurement of 20 film strength, and it has a high degree of reliability in the silicon power system, and has a high energy rate of 7%. It is enough to crystallize its body temperature. The temperature of the board is 10 energy high. The board e is based on the limited range of the material, and the base is based on this modest rate. Electricity. For the supply frequency, the product should produce 10 high-frequency and high-supply spray systems, which are enough for the 13th power-up period. The power source system is extremely capable, and the road energy surface should be filled with δ. The shape of the paste should be provided by electricity, and the surface rate of electricity should be provided. The electrode sprinkler is provided for the two-phase frequency meter-Litong electric two-lead body and I is suitable, and the plate limit is the second frequency of the air-injection, which is 72, the frequency on the upper membrane base. The 6th thinnest type of this high temperature should be used for the base electrode and the electrode in the comparison board is said to have 6 more megawatts. For the base to be able to achieve a low 12th Μ on the Cheng Cheng, it is necessary to have a structure that is not inconsistent with the source of electricity, and the power of the electricity can be provided for the wisdom of the Ministry of Economic Affairs at the frequency of production. Printed by the Consumer Cooperative of the Property Bureau 457562 A7 B7 V. Description of the invention (The output of the printed 9a gas produced by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is supplied for the first response. Should be provided 6.If the slurry is fed into the film, the meter is powered, the high-injection line 6 is supplied..54 The body is electrically connected to the silicon, and the slave is connected to the board. The 13JS gas, which is used to sniff the tube body, etc. The crystal 10th and the base film 10th and the 6th body have electrical transmission on the Ifci-Si monolithic system, the Si-Si system, and the He Qi only round two should be sprayed. The first gas is not in the plasma evolution system in the plasma , 2 more-the first from 6. The M3 should be a qualitative response and the electric nitrogen introduction should be extremely moderate. This is a graph of the body electricity of the isomorphic supply etc. At the energy level, the gas is composed of gas and high-body gas, and the monomer is formed into gas. The system can contain enough alkane gas to form nitrogen. The non-gas structure has a high 9th. , Hydrogen-shaped one, body The mass of a hydrogen is dilute with the line. The body of the bottle will be the first gas, the rare gas, the second gas, and a tube of 20-type real gas, which will be 20 toward Kongwu i 2, the ammonia and the high adjacent gas. The first side of the system has 9 truths, and the system of gas injection is mixed with gas, and mixed with hydrogen. The input device is based on the hydrogen of the gas and the gas of the gas. However, the firing structure is shaped by the alkane and is guided by the alkane. The supply area for the first spray control of the M tube is enough for sand gas 20 and silicon gas 20. The wiring body is a shape conductor. 1Θ The energy of the lymph body is the internal energy of the system ^^ ν 39 is the energy of the tube-shaped 2 qi. The qi is close to the person who is out of this system. On the source, the second affiliated spraying from the yue yue yue yue and yue yue can be referred to as the ruler, the ruler 9 is set to the surface, the formula is the supply area, the formula is the supply amount 9 should be the line is installed with electricity 10 The physical shape of the body at the time of the appearance and the physical energy number are provided for the outer tube gas. There is a uniform spray from the board with the internal gas near the internal gas award. Two --------- One -------- Order --------- Iron I (Please read the back first Please fill in this page again if you need to pay attention to the above) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇χ 297mm) A7 4 5 7 5 6 2 __B7_ V. Description of the invention (1C)) Non-single crystal η -Type silicon film. Fig. 2 is a schematic diagram showing a plasma C0 device according to the second embodiment of the present invention by using K. In this figure, the same parts as those in the first embodiment shown in Fig. 1 are designated by the same reference numerals, and we will omit their repeated explanations appropriately. In this embodiment, the gas supply transmission line 9 constituting the second gas supply system 20 is made of a conductor. The gas supply and delivery line 9 is connected to a third high-frequency power source 14 and a third adaptor circuit 15 arranged outside the vacuum bottle 1, and some elements are connected to form a second plasma source. The gas supply transmission line 9 used to constitute the second gas supply system 20 functions as an antenna and acts as a coil in an inductively coupled plasma source. Although my simplified line for simplicity and simplicity shows the gas supply and delivery line 9, in fact, the gas supply and delivery line 9 is composed of a conduit as shown in FIG. 1 and contains some gas injection ports 9 a. The material gas is ejected toward the substrate. In each of the attachment circles following FIG. 2, the gas supply duct 9 can also display a simplified solid gland plus M. The first plasma source may form a silane plasma by introducing a silane gas from the first gas supply system 10 in the form of a bed sprinkler. At the same time, we can supply the third high-frequency power source 14 through the gas supply transmission line 9 as the second plasma source, and the supply frequency is as high as 3.56 and 1.5 million MHz. High-frequency power, and introduce hydrogen and rare gases from the second gas supply system 20 into the area near the surface of the substrate. Therefore, a plasma consisting of these gases is selectively formed in the area near the surface of the substrate. High-1 2-This paper size applies to China National Standard (CNS) A4 specifications (2) 〇χ 297 mm) --------------------------- Order --- --- IJ (Please read the Jiang Yi matter on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 457562 A7 B7 V. Invention Description (11 Printed by the Consumer ’s Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Some of the film-supplying gases are one-two and coherent and 20-plasma. U-body is one-to-bottom gas-supplying area. The amount of silicon and nitrogen is selected. With the gas, the table selects the ME of the high system, the nitrogen gas that is supplied to the warm gas mixture is converted from the plate into a sample of the actual amount of the gas @ The crystalline ammonia type is provided by the form of the base field. The dual energy base is formed by the second attached land. The homomorphic shape is formed by the area and a 7K corner is formed. The low surface is continued. In the advanced structure, the Qi Sansuo deserves to follow one form and the other, and connect to the surface. The 20-shaped shape can be approximated on the body. The second figure is the same as the appropriate one, and it is from the plate. Such as the shape of the surface of the base paddles, high-grade, and other decent tables should be the source of the hair. And can spit air by the area to form the gas source should be based on the plasm of the plasma, human leaching nitrogen Μ The imported tritium energy supply gas has a plate shape, which is based on the J & electric type, which can be approximated to form an externally dilute base-type electric energy source, which is a bimorphic pole. Also reduce this and the two thin and stfe line electric lines. Borrow the ammonia to the decent body of the two systems. The first person of the 1W snails, the surface of the gas system and the plasma hydrogen should be To me. Shows the spirit of the first. When the silicon can be gas, there should be a table. The gas should be self-adaptive. The body is shown. The crystal source alkane and the dilute source are formed by the alkane-supply 20 to supply the film. Qi K1 plays 9 to a single slurry of silicon. And the slurry shape is enough to form silicon. The amount of silicon hydrogen intended timeline should indicate the non-electrically charged plasma gas and the electric membrane energy into the structure. This energy can be typed. The η-Phosphor map shows that the 10th force-supplied product will be the first source gas supply area of the person, and the 3 different power transmission films will be 20, and the shape of the slurry should be uniform. f Differential frequency books come from within the system. The electric mixed gas will supply the non-CV supply I ^ f. Please read the meanings on the back before filling in this page) This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 457562 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ 12 V. Description of the invention () In general, we can supply the appropriate energy to the film formation surface by the plasma formed by the second plasma source or by the high-frequency power supplied to the second electrode. Various high-quality non-single-crystal sand films are formed at low temperatures. In order to obtain a silicon film having uniform and satisfactory quality, it is preferable to apply a gas from the second gas supply system 20 to the substrate in a uniform manner. In this regard, especially when each of the gas injection ports 9 a is pointing downward, it is desirable that the gas injection ports 9 a be arranged on the substrate as uniformly as possible. Since the nitrogen gas supply and delivery line M of the fold # spiral shape (spiral shape) is used in this embodiment instead of the gas supply and delivery line 9 in the form of a square loop as shown in FIGS. 1 and 2, the gas is uniformly distributed. When supplied to the substrate, M can form a more uniform plasma from the second plasma source in a region near the surface of the substrate. Therefore, we can obtain non-single-crystal silicon films with higher quality. In addition to the square loop or spiral form described in the first to third embodiments, the gas supply and delivery pipeline may be in various suitable forms; for example, we can also use circular loops, circular spiral loops, Curved, M, and comb-shaped gas supply delivery lines. In addition, each gas injection port 9a may not point downwards, but we can choose a variety of appropriate directions, such as alternately left and right K, and tilt downwards. Figure 4 shows a method based on M A schematic diagram of a plasma CVD apparatus according to a fourth embodiment of the invention. The difference between this embodiment and the first real cell example shown in FIG. 1 is that the first electrode 2 is provided with a lot of ^ 1 4 on the back surface thereof. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) — ^ --------- 《^ -------- Order --------- Line (Please read the notes on the back before filling in this page & gt A7 457562 _B7__ 5. Description of the invention (U) Crescent magnetic field forming magnets 16. These magnets are arranged on the surface of the first electrode 2 such that the magnets of each phase have opposite planar polarities, and therefore A uniform crescent-shaped magnetic field is formed under the first electrode. The crescent-shaped magnetic field causes the plasma concentration in the area under the first electrode to become a high-concentration plasma such as a material gas or a silane gas, and therefore greatly The solubility of the material gas or silane gas is increased and the film formation rate is greatly increased. In addition, because the substrate is separated from the high-concentration plasma region, the film deposition surface is not caused by the The high-energy charged particles in the plasma are destroyed. In addition, by supplying from the second gas The introduction of an air temperature such as hydrogen and / or a rare gas toward the surface of the substrate enables us to properly activate the thin film deposition surface. Therefore, we can form various high-quality non-single-crystal silicon films at low temperatures. FIG. 5 is a schematic diagram showing a plasma CVD apparatus according to the fifth embodiment of the present invention with K. The difference between this pickled example and the example of the blister shown in FIG. 2 is that the first electrode 2 is on the back surface A plurality of crescent-shaped magnetic field forming magnets 16 are provided. These magnets are adsorbed on the surface of the first electrode 2 so that adjacent magnets have opposite planar polarities, and thus are formed uniformly under the first electrode. Crescent magnetic field. The crescent magnetic field will cause the plasma concentration in the area under the first electrode to form a high-concentration plasma such as material gas or silane gas, so the material gas or The solubility of silane gas. In addition, because the substrate is separated from the high-concentration plasma, the film deposition surface is not damaged by the high-energy charged particles in the plasma. In addition, by The second gas supply system 20 is drawn toward the surface of the substrate _ 1 5-This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) —τ --------- ί Pack- ------- Order ---------- Slow (please read the back of the page first; I will fill in this page before filling in this page) Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 457562 A7 Άί _B7 14Five 、 Invention description () The printed sheet with three high-energy paddles can be printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The self magnetic surface has a low magnetic edge, and the inner spring of each time and ground has a thin magnetoelectric field or a field neighbor: ie edge minus response surface 2 Π1Ε A child is an example of its own use / the effect of the magnetic pole phase tfcja The appearance is the same as the conformal application h or y, the source is uniform, and the shape of electricity-the extreme field pole is U plane under hydrogen. The outer slurry is uniform. Liyue. One. It can be concentrated magnetically, and it can warm the electric field of the six table 1. The new quality of the first Mi, this kind of slurry, the basic person is low, the second part of the iron should be two to the magnetic products known to the high & The first body is formed in the shape of a magnetic effect in the back of the Ming Dynasty, and the film is formed in a thousand minus four minutes. The number of the full-battery field h, which is sufficient for the use of the gas, is sufficient for hydrogen. Nengben — 2 The energy from the new iron to find its magnetic energy to the θ 'energy part. Cheng Shengsheng et al. According to the polar phase of the cell, the magnetic current needs or the electric field example of the ten-Sr popularity degree, the electric current is /, the number is 0! In the field, the medium is electric M and the medium is' r0. The shape of the solid area in the shape of the solid or the rate of change is as it is. It is shown that it has a gas-selective factor. This month, the electric iron application rate is changed to 1S, and K-face silicon is rare. . The image is shown in the newest uniform magnetic field by electricity. It is appropriate; the flatness or source thinning mask M means more and more with Fujun Liujiu borrowed closed shape Liushi 4 upper thick / paddle, surface silicon to show different The uniform height of the 3 ^ spacer and the difference of the electric-based crystalline system on the surface of the II film can be expressed from the energy and the thin to the inside. The plate is opened by its four-domain W, and the hydrogen is removed from the membrane. The 6th example is the removal of the structure, the first is the point-making, the second is the homogeneous magnet, and the first is like the thin body of the body. This is equal to the energy. Excellent control from the inside to the main into the main gas, the product CV in the real surface is close enough to the sharer -------------- {I ----- --- Order --------- Line I (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 457562 A7 _B7 V. Description of the invention (15) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Ministry of Economic Affairs on the 17th and the 17th stage of the performance, the thick film gives enough energy-S points. Line electricity ¾ play 9 from, in the same district with high-profile and thin talents i-of the 17 days three one of the line 5 middle phase bet for the talented person. I. Example and line This first example Θ The donor structure is electrically lifted by the membrane and the membrane cells and the air is supplied by the U. The degree of aspirating cells will be borrowed from the base-silicon to be delivered to the iTif in the next nest. Yano. The source and thus crystal effect become the seventh SP background color and the eighth material should be in Qi Gaolai. Since the 9th angle of the Qin field shape, and the 19th power supply, this is the first power generation sum. The source of the non-magnetic Ming D line goes to the Ming i7 line, and then to the cloth. The D-tube slurry is generated by the sub-matrix, and the D-tube gas is generated. Wu Xing San Di Li You You Bi Copy ^: Send. Electricity is enough. Ben ^ send this, the 9th upper zone of the self-esteem has five data _ lose two fit energy grinding data 0 lose. The 93 line and the surface should be a variety of different types. To the root, the third person should respond to the 17-port pipe, the slave or the isolated three. The three Sr supply lines are used to shoot the gas of the three-plate system. To be a united one, the same 1: ® body-injection second base is exemplified by the heavy-duty examples. The qi is shown by the middle phase, the body of the Qi should be displayed, the self-applied body is very thin, and the display is 1 °. The color gas is supplied to the second picture, alkane gas, and the degree of hexamethylol. It is equipped with Mtt and Yujiao. The silicon body of the spray has gas and the temperature is used for the third one. It is 14 for this practical meaning. The dilute hydrogen of 98 and M formed the plate to the first series of h. The different extraction originated from the six series of W different propellers. The internal port to the internal potential two and the upper base four to Figure 16. The first 7H frequency of the air mask and the second two sprays are enough. This caused the hydrogen surface to be thinner than the D-th case. " Example D of the first physical response. The cited product has an encouraging effect on the three to five CVs applied by the MCV ----------- ^^ ------ " * 1 | Order --------- line one i (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) A7 457562 _B7___ 1 6 V. Description of the invention () In the seventh and eighth embodiments, the antenna 17 is not necessarily hollow. At the same time, the bark of the antenna 17 is not limited to a square shape, and we can also adopt any other shape such as a circular, polygonal, M, and circular polyhedral spiral as required. Fig. 9 is a schematic diagram showing an electric paddle CVD apparatus according to a ninth embodiment of the present invention. The difference between this embodiment and the seventh embodiment shown in FIG. 7 is that a plurality of crescent-shaped magnetic field forming magnets 16 are provided on the back surface or the inner surface of the first electrode 2. The crescent-shaped magnetic field concentrates the plasma in the area under the first electrode, so a high-concentration plasma such as a material gas or a silane gas is formed and the material gas or the silane is greatly improved. Gas solubility. In addition, since the substrate is separated from the high-concentration plasma, the deposition surface of the film is not damaged by the high-energy charged particles in the plasma. Therefore, we were able to form each film at a higher rate than the t-th pickled example. FIG. 10 is a schematic diagram showing a plasma C V D device according to a seventh embodiment of the present invention by using K. FIG. The difference between this embodiment and the eighth embodiment shown in FIG. 8 is that a plurality of crescent-shaped magnetic field forming magnets 16 are provided on the surface of the mint portion or the inner surface of the first electrode 2. Again in this example, we were able to form each at a higher rate than the eighth example. Figures 11A and 11B are voltage waveform diagrams showing a first plasma generating method according to the present invention with M. In the plasma C V D devices of the second, third, fifth, sixth, and seventh embodiments described above, the first and second plasma sources are independently driven. In the method of generating the first electric propeller, the second electric propeller source is subjected to continuous -18 ~ This paper size uses the Chinese National Standard (CNS) A4 specification (21〇χ 297 male t) 1 t II I --- {Install --- I ----- Order -------- * line (please read the notes on the back before filling this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 457562 A7 B7 V. Invention Description (17 seconds in a thousand people * five mouths, gas material example ct spoon 1 t & arrive. The second kind of micro-drive alkane 10 off-like image-in is the source of the source 10 slurry system糸 1 should be provided for the recipient to have internal qi for only one week, and the mesangium that surrounds the follower drive should be 0 ^ ^ crystal 0 0 0 and ϋΙΙ gas — germplasm hydrogen 1 This Dn is highly attractive < 、， 到 ο Party 2. Meeting. Msfe, 'Base 3 Different Dependent Self-Supply Needs 3 Body Η Seng Qi S Zhu Er for Acting as the person who recognizes the person from my use and is an isoform.駄 = = Μ θ Ξ 帛 by the researcher from the source research 3 Η 人 人 人 该 对 对 对 内 内 内 内 浆 浆 浆 明 浆 借 借 借

該 加 增 而 作 操 ΖΞ2 6SS 根具 。 基 下由 如自 因 3 原ΪΗ fy 的 象 0 1 種 這 琨 發 人 吾 第 S 該的 當額 使量 即當 ，相 此有 因是 。 還 命 * 壽時 的 J 長閉 更關 基 Γ 由為 自出 他輸 其的 比源 有電 頁 高 自 基 ， 由此 自因 命 。 壽了 短蹤 種無 各失 ， 消 面 即 方立 一 便 另時 。 出 内輸 瓶該 空閉 真關 該在 在是 琨都 出分 基部 由大 內量 間考 時。 均的 平升 於上It should be added for operation Ξ 2 6SS root tool. Basically, there are three types of phenomena, such as self-cause 3 and fy. This kind of issuer is equivalent to the equivalent amount of power, and there is a reason for this. To return to life * J's long-time closing is more important. Γ is self-defeating because he loses more power than the source, which is self-defeating. There is nothing wrong with the short-lived species, but when it disappears, it will be another time. When the bottle is out, the air-closing really closes. It should be tested at the base of the capital of Lidu. Evenly rising above

是當 度適 濃 ， 對命 相蕎 4IUJ 4,、J 基基 由由 0 自 他他 其其 對和 基基 由由 0 S 的 間 之 秒 毫 ο ο 1X flj 秒 微 ο 1Λ 在 落 是 期 週 環 循 衙 i 開 的 該旦 從上 ，面 體表 氣板 料基 材該 的到 類應 之供 氣等 氫體 像氣 進有 -c j 弓稀 由將 藉統 K 糸 夠應 能供 人體 吾氣 ，二 時第 (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---------線 經濟部智慧財產局員工消費合作社印槧 該、能 由基人 內由吾 之自使 域體而 區氣 ， 的有面 近稀表 附、積 面子澱 表離膜 板氫薄 基、的 該基化 於由活 地自M 性氫加 擇生等 選產子 間源離 時漿體 同電氣 相二有 在第稀 人 吾 3 Η 使 S 此 。 該因 瞑 ， ， 矽時加 晶用増 單使而 非起生 質一產 品場的 高磁漿 種形電 各 月 _度 成新濃 形合高 於結著 下 當 隨 溫，會 低外度 在此濃 夠 基 由 自 本紙張尺度適用尹國國家標準（CNS)A4規格（2〗0 X 297公釐） 457562 ΚΙ _Β7_ 五、發明說明（18 ) 夠在低溫下Μ高速率形成各膜。 (諳先閱讀背面之注意事項再填寫本頁) 第1 2 Α和1 2 Β圖、係用Μ顯示一種根據本發明第二電槳 產生方法的電壓波形圖。於這種驅動方法中，不僅該第 一電漿源而且該第二電漿源都是依週期性地間馱開-關 方式加以驅動的。明確地說，於落在1 〇微秒到1 〇 〇毫秒 之間的循環週期內Κ相互間有1 δ 0度相位差關係的開-關方式驅動該第一和第二電漿源。當該第一和第二電漿 源分別是「開」和「關」時，有矽烷電漿形成於該真空 瓶內，且於該基板上澱積了數層薄膜。於下一循環内， 亦即該第一和第二電漿源分別是「關」和「開」時，主 要選擇性地於該基板表面附近的區域之内產生氫自由基 、氫離子、稀有氣體自由基、稀有氣體離子等，因此改 良了於前一循環内所澱積膜層的品質。藉由反覆地交替 轨行上述膜澱積及膜改良步驟，使吾人能夠在低溫下於 形成各種高品質非單晶矽膜。同時，由於在膜改良週期 内出現了上述指出壽命像循環一般長的SiH3自由基， 因此使吾人能夠在低溫下Μ高速率形成各膜。 經濟部智慧財產局員工消費合作社印製 此外，吾人也能夠藉由對該第一和第二高頻電源腌行 相互間有1 8 0度相位差關係之間歇***替開-關方式的 驅動而實琨相同的方法。 於如上所述根據本發明各實_例的電漿C V D裝置，係 將其頻率落在1 3 . 5 6與5 0 0百萬赫之間的高頻電力被供應 到扮演著第一電漿源角色的第一電極2上。當在比1 3 . 5 6 百萬赫更高之V H F能帶内的頻率，亦即正常的商用頻率 -20 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 57 56 2 Α7 Β7 經濟部智慧財產局員工消費合作社印製 19五、發明說明（） 上產生放電時，係形成高密度電漿Μ改良材料氣體的使 用效益，並允許吾人在高速率下形成各種高品質的膜。 此外，當結合該V H F能帶頻率及新月形磁場一起使用時， 使吾人能夠在高速率下彤成各賸。 於如上所述根據本發明各實皰例的電漿C V D裝置中， 係將其頻率落在1 0 0仟赫與1 3 . 5 6百萬赫之間的高頻電力 供應到該第二電極6上。依這種方式，吾人能夠藉由Κ 非常低的頻率將高頻電力供應到該第二電極6上而控制 該基板表面上的離子能量。這是因為即使具有比電子具 有更大質量的離子也能夠跟得上低頻的電場變化◦這種 離子能量控制方式允許吾人在該薄瞑 '殺積表面上提供適 當能量並在低基板溫度下形成各種高品質的膜。同時， 依與該第一和第二電漿源之開-關驅動同步的方式打開 及關閉該第二電極上的高頻電力，使吾人能夠對該薄膜 澱積表面上之氫離子和稀有氣體離子的能夠控制提供一 些變化，因此允許吾人快速地在低基板溫度下彩成各種 高品質的膜。 吾人能夠藉由根據本發明各實腌例的電漿C V D裝置Μ 及上述任意一種薄膜形成方法而彤成各多晶矽_。於根 據本發明的簿膜形成方法中，吾人係依正性方式將氫自 由基供應到該基板表面上。自上擴散到該薄膜澱積表面 上的各氫自由基會包裹覆蓋於該表面上的氫原子而使該 表面活化。在已活化的位置上，使S ί Η 3自由基散佈於 該薄膜澱積層上，因此允許吾人Κ非常低的氫濃度在低 i ---I 1---^ 裝-------訂---------線 ί . (請先閒讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（2】〇χ 297公釐） 457562 經濟部智慧財產局員工消費合作社印製 A7 _B7__五、發明說明（2<)) 基板溫度下形成高品質的非單晶矽膜。此外，藉由利用 稀有氣體等的離子能量，使吾人能夠在大約3 0 0 °c的低 溫T肜成具有絕佳晶體性質的高品質多晶矽膜。這種高 品質多晶矽膜具有相當於經習知雷射退火處理的薄膜品 質。 現在吾人將在沒有任何限制的觀點下說明本發明的各 質洌。 琨在吾人將要對一些根據本發明之電漿c V D裝置及Μ 如第1圖所示之電漿C V D裝置為基礎之薄膜形成方法的 實例加Κ說明。 將頻率落在60百萬赫的高頻電力供應到該第一電極2 上，嵌淋灑彤式從該第一電極所提供該許多氣體噴射埠 9 a將闬來當作材料氣體的矽烷氣引進該放電瓶1内。 將基板7設置於該第二電極6上，並控制該加熱器8 Μ得到2 0 0 °C的基板溫度。 用來當作第二氣體供應***的該氣體供應輸送管線9 是以内徑為3毫米而厚度為1毫米的圓柱形金屬導管形 成的，且具有大約與該第二電極尺寸相同的矩形形狀。 各氣體噴射埠9 a是Μ大約1公分的間隔配置在該圓柱形 導管的下邊部分上使得氣體是從它捫朝該基板表面噴出 。其中供應有氫氣和氙氣。 如是藉由分別從該第一和第二氣體供應糸統引進各種 氣體而形成了電漿，藉由利用該排氣裝置將放電瓶内的 氣體壓力控制為5 P a ,並將頻率落在6 0百萬赫的高頻電 -22- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 45756 A7 B7 五、發明說明（ 21 依 對 法 方 輻 泉 外 紅 換 轉 葉 。 立 上 傅 極R( 一—_ 霄 I 1FT 第種 該一 H4 fee 5 價 愿由 供 _ 力 估 ¢1 行 進15 瞑有 矽含 晶 中 單其 β, ΪΤΤν ， 的膜 成的 形質 式品 方高 -i I 這各 了 成 形 現 發 人 吾 含 且 度 濃 氫 的 低 更 是 或 統 ¾ 應 供 體 。 氣 度一 密第 合該 耦從 2 式 -H形 si灑 於淋 高依 是由 度藉 密M 合夠 耦能 -H也 S 人 的吾 有 氣薄其 二成 ， 第完膜 該而矽 從内化 且之氮 漿瓶的 電電質 的放品 成該高 形到種 所應各 氣供了 氫氣成 和氙形 、 和琨 氣氣發 氨氫人 「 將吾 氣統。 踪¾成 矽® 形 進供的 引體膜 夠-fcfc N ® 的也 有人 含 吾 中 於 高 是 度 密 合 T-i 耦 Η 度 密 合 耦 供 氣1 第 該 從 式 形 灑 淋 依 由 藉Μ 步1 進 且之 體瓶20 氣電為 氫放數 化該係 磷到阻 和應電 氣供其 烷氣到 矽氙得 進和現 引氣發 統氳人 糸將吾 應統。 系成 應形 供的 體膜 氣薄 二成 第完 該而 從内 的 低 更 或 分 公 姆 歐 漿 電 之 明 發 。 本 膜據 矽根 晶種 C 單一漿 非對電 型要之 η-將示 質人所 品吾圖 高在 2 種琨第 各 如 Μ 的 及法 置方 裝成 VD形 ;膜 薄 之 礎 基 為 置 裝 2 極 電1 第 該 到 應 供 力 電 頻 高 的 赫 萬 百 ο C 6 明在 說落 Μ 率 加頻 例將 實 (請先閱讀背面之注意事項再填寫本頁) 裝 11 1 . 镍 經濟部智慧財產局員工消費合作社印製 埠將得 射。Μ 噴内 δ 體 1 器 氣瓶熱 多電加 許放該 該該制 供進控 提引並 所氣 ， 極烷上 電矽 β 一 的極 第體電 該氣 二 從料第 式材該 形作於 灑當置 淋來設 依用 7 ，將板 上9a基Is the right degree of concentration, the opposite phase of buckwheat 4IUJ 4 ,, J Jiji from 0 to other other pairs and Jiji from 0 S between the milliseconds ο ο 1X flj seconds slightly ο 1Λ is the period The loop is opened from the top, the surface of the surface sheet material base should be similar to the supply of gas, such as hydrogen gas, there is -cj. Gas, two o'clock (please read the precautions on the back before filling this page) Binding ---- Order --------- The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs should print it, which can be run by the base The inner part of the body is self-reliable, and the surface is nearly dilute, the surface is thin, and the surface is thin, and the base is hydrogenated. It is based on the selection of the birthplace by living hydrogen and selective hydrogen generation. When the source is away, the slurry and the electrical phase are present in the second rare person. Because of this, when silicon is added, silicon is used instead of the high-magnetism seed type electricity produced in the bio-product field each month. The degree of formation is new, and the concentration is higher than the junction temperature. Here, it is based on the application of Yin National Standard (CNS) A4 specifications (2〗 0 X 297 mm) from the paper size. 457562 ΚΙ_Β7_ V. Description of the invention (18) It is possible to form each film at a high rate at low temperatures. (Please read the precautions on the back before filling in this page.) Figures 1 2 A and 1 2 B show the voltage waveform diagram of a method for generating a second electric paddle according to the present invention with M. In this driving method, not only the first plasma source but also the second plasma source are driven in a periodically on-off manner. Specifically, the first and second plasma sources are driven by an on-off manner in which a K has a phase relationship of 1 δ 0 degrees from each other in a cycle period between 10 microseconds and 1000 milliseconds. When the first and second plasma sources are "on" and "off", respectively, a silane plasma is formed in the vacuum bottle, and several layers of films are deposited on the substrate. In the next cycle, that is, when the first and second plasma sources are "off" and "on", respectively, hydrogen radicals, hydrogen ions, and rare species are mainly selectively generated in a region near the surface of the substrate. Gas radicals, rare gas ions, etc., thus improving the quality of the film layer deposited in the previous cycle. By repeating the above-mentioned film deposition and film improvement steps repeatedly, we can form a variety of high-quality non-single-crystal silicon films at low temperatures. At the same time, since the above-mentioned SiH3 radicals, which have a long life span like a cycle, appeared during the membrane modification cycle, we were able to form each membrane at a high rate at low temperatures. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, we can also drive by intermittently switching on and off the 180 degrees phase difference between the first and second high-frequency power lines. Do the same thing. As described above, according to the plasma CVD apparatus of the present invention, the high-frequency power whose frequency falls between 13.56 and 500 MHz is supplied to act as the first plasma. Source character on the first electrode 2. When the frequency is in the VHF band higher than 1 3. 5 6 MHz, which is the normal commercial frequency -20-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 4 57 56 2 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 19 V. Description of the invention () When a discharge occurs on the system, the high-density plasma M is used to improve the use of the material gas and allow us to form various types of materials at high rates. High-quality film. In addition, when used in combination with the V H F band frequency and the crescent magnetic field, it enables us to generate surpluses at high rates. In the plasma CVD apparatus according to the various examples of the present invention as described above, the second electrode is supplied with high-frequency power whose frequency falls between 100 MHz and 13.56 million Hz. 6 on. In this way, we can control the ion energy on the surface of the substrate by supplying high-frequency power to the second electrode 6 at a very low frequency of K. This is because even ions with a larger mass than electrons can keep up with low-frequency electric field changes. This ionic energy control method allows us to provide appropriate energy on the thin stubby surface and form at low substrate temperature. Various high-quality films. At the same time, the high-frequency power on the second electrode is turned on and off in a synchronous manner with the on-off drive of the first and second plasma sources, so that we can hydrogen ions and rare gases on the film deposition surface The ability to control the ions provides some variation, thus allowing us to quickly color various high-quality films at low substrate temperatures. I can form each polycrystalline silicon by the plasma C V D device M according to the various pickled examples of the present invention and any one of the above-mentioned thin film forming methods. In the method for forming a film according to the present invention, we supply hydrogen radicals to the surface of the substrate in a positive manner. Each hydrogen radical diffused from above onto the film deposition surface will enclose the hydrogen atoms covering the surface to activate the surface. In the activated position, S Η Η 3 radicals are scattered on the thin film deposition layer, thus allowing us to have a very low hydrogen concentration at low i --- I 1 --- ^ equipment --- -Order --------- Line ί. (Please read the precautions on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 specifications (2) 〇χ 297 mm) 457562 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7__ V. Description of Invention (2 <)) A high-quality non-single-crystal silicon film is formed at a substrate temperature. In addition, by using ion energy such as a rare gas, we can form a high-quality polycrystalline silicon film with excellent crystal properties at a low temperature T of about 300 ° C. This high-quality polycrystalline silicon film has a film quality equivalent to that of a conventional laser annealing process. Now I will explain the essence of the present invention without any limitation. I will explain some examples of the plasma c V D device and the plasma C V D device based film forming method according to the present invention. The first electrode 2 is supplied with high-frequency power having a frequency of 60 megahertz, and a plurality of gas injection ports 9a provided by the first electrode from the first electrode are treated as silane gas containing tritium as a material gas. Into the discharge vessel 1. The substrate 7 is set on the second electrode 6 and the heater 8 is controlled to obtain a substrate temperature of 200 ° C. The gas supply delivery line 9 used as the second gas supply system is formed by a cylindrical metal pipe having an inner diameter of 3 mm and a thickness of 1 mm, and has a rectangular shape approximately the same size as the second electrode. Each gas injection port 9a is arranged at an interval of about 1 cm from the lower portion of the cylindrical duct so that the gas is ejected from it toward the surface of the substrate. It is supplied with hydrogen and xenon. If plasma is formed by introducing various gases from the first and second gas supply systems respectively, the gas pressure in the discharge bottle is controlled to 5 Pa by using the exhaust device, and the frequency falls at 6 0 megahertz high frequency -22- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 45756 A7 B7 V. Description of the invention (21 According to the French side, the springs are red and the leaves are changed. Li Fuji R (一 —_xiao I 1FT The first one H4 fee 5 The price is willing to be provided by _ force estimate ¢ 1 march 15 β, ΪΤΤν, the shape of the film formed by the product type high -i I This is the formation of the founder I and the concentration of hydrogen is low or more 应 should be the donor. A degree of closeness should be coupled to the formula 2 -H-shaped si is sprinkled on the lining Gao Yi by the degree of dense M combined enough to couple the energy -H also S people's ambitions are 20% thinner, the first film should be silicon and the electrical properties of the nitrogen slurry bottle The release of the product into the high shape to the species should provide hydrogen and xenon, and krypton gas Ammonia hydrogen "combined my gas. The lead film that feeds into silicon ® shape is enough-fcfc N ® Some people also have a high degree of tight coupling with Ti in the middle and a high degree of gas supply. 1 The slave-shaped sprinkler uses the step 1 of M to enter the body bottle 20, and the gas and electricity are converted into hydrogen. The phosphorus is blocked, and the alkane gas is supplied to the silicon xenon. I will be unified. The body film that is in the form of an application should be 20% thin, and the light from the inside of the lower body or centimeters. The film is based on the silicon seed crystal C. The single slurry is not correct. The η of the electric type is to install the figure shown by the exhibitor in two kinds, each of which is equal to M and installed in a VD shape; the base of the thin film is installed with 2 poles and 1 should be supplied with power. High frequency and high frequency ο C 6 is clearly saying that the rate of increasing the frequency will be implemented (please read the precautions on the back before filling out this page). 11 1. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Consumption Cooperative. There is a shot. The δ body of the δ body 1 cylinder is heated and the electricity is added. The system should be released for the control and extraction. Gas, power pole alkyl β silicon body a first electrode electrically from the two gas feed of the formula sheet shaped as opposed to when the shower sprinkle be provided in accordance with 7, the upper plate 9a yl

度 溫 板 基 的 V 為 定 設 0 距 的 間 之 極 .電 二 第 與 1 第 該 將 分 公 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） Ϊ5756 A7 B7 22 五、發明說明（ 該氣體供應輸送管線9是以内徑為3毫米而厚度為1毫 米的圓柱形金屬導管形成的，而具有大約與該第二電極 尺寸相同的矩形形狀f且是定位在該第二電極以上4公 分的位置上。各氣體噴射埠9 a是K大約1公分的間隔配 置在該圓柱形導管的下邊部分上使得氣體是從它們朝該 基板表面噴出。其中供應有氫氣和氙氣。 如是藉由分別從該第一和第二氣體供應系統引進各種 氣體而形成了電漿，藉由利用該排氣裝置將放電瓶內的 氣體壓力控制為5 P a ,並將頻率落荏6 0百萬赫的高頻電 力供應到該第一電極上。矽烷電漿係藉由利用頻率落在 6 0百萬赫的電源當作第三高頻電源所形成的，而氫氣和 氙氣電漿係藉由利用頻率落在1 3 . 5 6百萬赫的電源當作 第三高頻電源所形成的。由於吾人係藉由氫氣和氙氣電 漿而將能量提烘到該基板表面上，故而能夠在與如第1 圖所示之電漿C V D装置有闢的實施例上形成具有較高品 質非單晶矽瞑。 吾人也能夠以藉由依淋灑形式從該第一氣體供應糸統 引進矽烷氣、氨氣、和氫氣所形成的電漿且從該第二氣 體供應系統將氫氣和氛氣供應到該放電瓶之内而完成薄 膜的肜成。吾人發現形成了各種高品質的氮化矽膜，其 中含有的N - Η耦合密度是高於S i - Η耦合密度。 吾人也能夠進一步以II由依淋灑形式從該第一氣體供 應***引進矽烷氣和磷化氫氣體且從該第二氣體供應系 統將氫氣和氙氣供應到該放電瓶之内而完成薄瞑的形成 -24- 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -----------^ 裝--------訂---------線 (清先閱讀背面之注音？事項再填窝本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 45756‘ A7 _B7_ 2 3五、發明說明（） 。吾人發琨得到其電阻係數為1 5 0歐姆·公分或更低的 各種高品質η -型非單晶矽膜。 現在吾人將要對一些根據本發明之電漿C 1/ D裝置及Μ 如第3圖所示之電槳C V D装置為基礎之薄膜形成方法的 實例加以說明。 將頻率落在6 0百萬赫的高頻電力供應到該第一電極上 ，依淋灑形式從該第一電極所提供該許多氣體噴射埠9 a 將用來當作材料氣體的砂烷氣引進該放電瓶1內。 將基板7設置於該第二電極6上，並控制該加熱器S Μ得到2 0 0 °C的基板溫度。用來當作第二氣體供應系統 的該氣體供應輸送管線9是K內徑為3毫米而厚度為1 毫米的圓柱形金屬導管形成的，且具有大約與該第二電 極尺寸相同的矩形螺線形狀。各氣體噴射埠9 a是Μ大約 1公分的間隔配置在該圓柱形導管的下遴部分上使得氣 體是從它們朝該基板表面噴出。如是Κ較之如第1和2 圖所示之電漿CVD装置實施例更均勻的方式將各氣體供 應到該基板表面附近的區域之内。其中供應有氫氣和氙 氣。 依這種方式，如是藉由分別從該第一和第二氣體供應 糸統引進各種氣體而形成了電漿，藉由利用該排氣裝置 將放電瓶内的氣體壓力控制為5 P a。5夕烷電漿係藉由利 用頻率落在6 0百萬赫的電源當作第三高頻電源所形成的 ，而氫氣和氙氣電漿係藉由利用頻率落在1 3 . 5 6百萬赫 的電源當作第三高頻電源所形成的ΰ由於吾人係藉由氫 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（2]0 X 297公釐） 經濟部智慧財產局員工消費合作社印製 4 5 7 5 6 . A7 _B7____五、發明說明（24 ) 氣和氙氣電漿而將能量提供到該基板表面上，故而能夠 形成其品質比如第1圖所示第一實陁例之電漿C V D裝置 更高的非單晶矽膜。 吾人係K藉由依淋灑形式従該第一氣體供應尧統5丨進 5夕烷氣、氨氣、和氫氣所形成的電槳且從該第二氣體供 應糸統將氫氣和氙氣供應到該放電瓶之内而完成薄膜的 形成。吾人發現形成了各種高品質的氮化矽膜，其中含 有的N - Η耦合密度是高於S卜Η耦合密度。 吾人係進一步Μ藉由依淋灑形式從該第一氣體供應系 統引進矽烷氣和磷化氫氣體且從該第二氣體供應系統將 氫氣和氙氣供應到該畋電瓶之內而完成薄膜的形成。吾 人發現得到其電阻係數為1 5 0歐姆·公分或更低的各種高 品質η -型非單晶矽膜。 ' 現在吾人將要對一些根據本發明之電漿CVD裝置及Κ 如第7圖所示之電漿C V D裝置為基礎之薄膜形成方法的 實例加Μ說明。 於如第7圖所示之電賭C V D裝置中，將該第二電極與 該天線1 7之間的距離設定為4公分，且將該天線1 7與該 氣體供應輸送管線9之間的距離設定為2公分。對其餘 步驟而言，使用的Μ如第2圖所示實陁例之電槳C V D裝 置為基礎的相同方法而實現薄膜的彤成。 琨在吾人將要對一些根據本發明之電漿C V D裝置及Κ 如第8圖所示之電漿C V D裝置為基礎之薄膜形成方法的 實例加Μ說明。 1 fr ------------ -----—--. I —------ {請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 5 7 5 6. Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 於如第8圖所示之電漿C 1/ [)裝置中，將該第二電極與 該天線1 7之間的距離設定為2公分，且將該天線1 7與該 氣體供應輸送管線9之間的距雛設定為2公分。於中空 導管的側壁內提供各氣體噴射埠9 a K便從該氣體供應輪 送管線9朝該基板表面引進各氣體。對其餘步驟而言， 使用的Μ如第2圖所示實施例之電漿C V D裝置為基礎的 相同方法而實琨簿膜的形成。 雖然已對本發明的某些較佳實施例和實例作了說明， 不過它們並非本發明的極限，且吾人能夠在不偏離本發 明所附申請專利範園之精神及架構下作各種改變和修正 。例如，本發明也可Κ應用在像氧化矽膜、氮氧化矽膜 、和Ρ -型非單晶矽膜之類的低溫形成膜上。 同時，由於根據本發明係依正性方式將氫自由基供應 到該薄膜澱積表面上，故使吾人能夠在大約3 0 0 °C的低 溫下形成其氫濃度為5纟或更低的高品質多晶矽膜。這是 因為在氫自由基包裹來自該薄膜澱積表面的覆蓋用氫原 子下進行薄膜形成，Μ致形成了一種具有高矽原子濃度 的膜。依這種方式形成的多晶矽膜具有相當於經習知雷 射退火處理的薄膜品質。因此，吾人能夠在不需要習知 雷射退火處理下實現降低製造成本的目的。 此外，一種藉由於該真空瓶側邊表面上提供許多磁鐵 而形成且之前用來於該真空瓶内提供均勻電漿濃度的結 構，可以结合根據本發明的結溝一起使用而得到更均匀 的電漿濃度。 -27 - I l· I t----ί^.!---- - 訂------! 1 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 7 5 6 2 A7 B7 經濟部智慧財產局員工消費合作社印製 2 6五、發明說明（） 如前所述，根據本發明的電漿C V D裝置Μ及使用該電 漿C V D裝置的薄膜形成方法，允許吾人Μ矽烷氣當作主 要材料在像2 0 0 °C的那麼低的基板溫度下形成高品質非 單晶矽膜、攙有雜質的非單晶矽膜、或是非單晶矽絕緣 膜。另外，由於以高濃度電漿形成而改良了該材料氣體 的分解效率，故改良了該材料氣體的使用效益並減少了 排放氣體的數童。因此，實現了適用於環境的薄膜形成 方法。 此外，吾人也能夠藉由使基板溫度升高到大約3 0 (TC 而形成需要施行習知雷射退火處理的高品質多晶矽膜。 另外，由於本發明能夠迅速地應用於更大尺寸的真空 瓶上，故吾人也能夠將本發明應用在液晶顯示器甩的簿 膜電晶體彤成方法中，這類液晶顯示器使用了其對角線 尺度長達大約1米的大尺寸玻璃基板。 很明顗地熟悉習用技術的人應該能在不偏離本發明所 附申請專利範圍之精神及架構下對各實陁例作各種不同 的修正。所提出的前述說明以及各附圖都是只作顯示之 用。因此吾人係將前述說明當作說明用而不是本發明的 限制。 參考符號說明 1 .....真空瓶（槽） 2 .....第一電極 3 .....第一高頻電源 4 .....第一適配電路 -28- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS.)A4規格（210 X 297公釐） 5α 經濟部智慧財產局員工消費合作社印製 d- A7 B7 五、發明說明（ 27 8 .....材料氣體 .....第二電極 基板 加熱器 氣體供應輸送管線 9a .. ..氣 體 噴 射 埠 10 .. …第 一 氣 體 供 應 系 統 11,. …排 氣 裝 置 12.. ..第 二 高 頻 電 源 13,. .第 二 適 配 電 路 14.. ，第 三 商 頻 電 源 15.. .第 三 適 配 電 路 16.. .•新 月 形 磁 場 形 成 用 17... ..天 m 20… …第 二 氣 體 供 應 糸 m -29 - 本紙張尺度適用中國國家標準（CNS)A4規袼（2]0 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線The temperature of the temperature plate base is set to a distance of 0. The second and the first should be divided. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 5756 A7 B7 22 5 2. Description of the Invention (The gas supply and delivery line 9 is formed by a cylindrical metal pipe having an inner diameter of 3 mm and a thickness of 1 mm, and has a rectangular shape f about the same size as the second electrode and is positioned at the second 4 cm above the electrodes. Each gas injection port 9 a is arranged at a distance of about 1 cm from K on the lower part of the cylindrical duct so that the gas is ejected from them toward the surface of the substrate. Hydrogen and xenon are supplied therein. Plasma is formed by introducing various gases from the first and second gas supply systems, and the gas pressure in the discharge bottle is controlled to 5 Pa by using the exhaust device, and the frequency is reduced to 600 High-frequency power of 10 MHz is supplied to the first electrode. Silane plasma is formed by using a power source with a frequency of 60 MHz as the third high-frequency power source, while hydrogen and xenon plasmas are borrowed. Yuri A power source with a frequency of 13.56 MHz is formed as a third high-frequency power source. Since we use hydrogen and xenon plasma to extract energy onto the surface of the substrate, it can be used in the same way as A non-single-crystal silicon plutonium with a higher quality is formed on a pioneering embodiment of the plasma CVD apparatus shown in Fig. 1. We can also introduce silane gas and ammonia gas from the first gas supply system by showering. And the plasma formed by hydrogen and hydrogen, and supplying hydrogen and atmosphere from the second gas supply system into the discharge bottle to complete the film formation. I have found that various high-quality silicon nitride films are formed, which contain The N-Η coupling density is higher than the Si-密度 coupling density. We can also further introduce silane and phosphine gas from the first gas supply system in the form of II from the shower, and from the second gas supply system will Hydrogen and xenon gas are supplied into the discharge flask to complete the formation of thin krypton. -24- This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) ----------- ^ Install -------- order --------- line (read the note on the back first事项 Matters will be refilled on this page) Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumers ’Cooperatives of the Ministry of Economic Affairs and the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by 45756' A7 _B7_ 2 3 V. Description of the invention (). I got a resistance coefficient of 1 Various high-quality η-type non-single-crystal silicon films of 50 ohm · cm or lower. Now we are going to analyze some plasma C 1 / D devices and M electric paddle CVD devices as shown in FIG. 3. An example based on the method of forming a thin film will be described. A high-frequency power having a frequency of 60 MHz is supplied to the first electrode, and the plurality of gas injection ports 9 a are provided from the first electrode in a shower form. A paraffinic gas used as a material gas is introduced into the discharge vessel 1. The substrate 7 is set on the second electrode 6 and the heater SM is controlled to obtain a substrate temperature of 200 ° C. The gas supply delivery line 9 used as a second gas supply system is formed by a cylindrical metal conduit having an inner diameter of 3 mm and a thickness of 1 mm, and has a rectangular spiral having approximately the same size as the second electrode shape. Each of the gas injection ports 9a is arranged at intervals of about 1 cm on the lower portion of the cylindrical duct so that gas is ejected from them toward the surface of the substrate. In the case of K, each gas is supplied into a region near the surface of the substrate in a more uniform manner than in the embodiment of the plasma CVD apparatus shown in Figs. It is supplied with hydrogen and xenon. In this way, the plasma is formed by introducing various gases from the first and second gas supply systems, respectively, and the gas pressure in the discharge vessel is controlled to 5 Pa by using the exhaust device. The oxane plasma is formed by using a power source with a frequency of 60 megahertz as the third high-frequency power source, while the hydrogen and xenon plasma systems are formed by using a frequency of 13.36 million The power source of He is used as the third high-frequency power source. Since we are using hydrogen (please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 specification (2) 0 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 5 7 5 6. A7 _B7____ V. Invention Description (24) Gas and xenon plasma supply energy to the surface of the substrate, so it can form its quality For example, the plasma CVD apparatus of the first embodiment shown in FIG. 1 has a higher non-single-crystal silicon film. We use an electric paddle formed by the first gas to supply the first gas, such as alkane, ammonia, and hydrogen, and to supply hydrogen and xenon from the second gas supply system. The formation of the thin film is completed within the discharge bottle. I have found that various high-quality silicon nitride films have been formed, and the N- 密度 coupling density contained in them is higher than the S / Η coupling density. Our department further completes the formation of the thin film by introducing silane gas and phosphine gas from the first gas supply system in a shower manner and supplying hydrogen and xenon gas from the second gas supply system into the krypton battery. We have found various high-quality η-type non-single-crystal silicon films with a resistivity of 150 ohm · cm or less. I will now explain some examples of plasma-based CVD apparatuses and plasma-based C V D apparatus-based thin film formation methods according to the present invention. In the electro-chemical CVD apparatus shown in FIG. 7, the distance between the second electrode and the antenna 17 is set to 4 cm, and the distance between the antenna 17 and the gas supply transmission line 9 is set. Set to 2 cm. For the remaining steps, the same method based on the electric paddle CVD device of the example shown in Fig. 2 was used to achieve the film formation. I will explain some examples of the plasma C V D device based on the plasma C V D device and the plasma C V D device based film forming method according to the present invention. 1 fr ------------ ---------. I ------- {Please read the precautions on the back before filling this page) This paper size applies to China Standard (CNS) A4 specification (210 X 297 mm) 4 5 7 5 6. Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Plasma C as shown in Figure 8 1 / [) In the device, the distance between the second electrode and the antenna 17 is set to 2 cm, and the distance between the antenna 17 and the gas supply transmission line 9 is set to 2 cm. Each gas injection port 9aK is provided in the side wall of the hollow duct, and each gas is introduced from the gas supply rotation line 9 toward the surface of the substrate. For the remaining steps, the same method as that based on the plasma CVD device of the embodiment shown in Fig. 2 was used to form the film. Although some preferred embodiments and examples of the present invention have been described, they are not the limits of the present invention, and we can make various changes and modifications without departing from the spirit and structure of the patent application park attached to the present invention. For example, the present invention can also be applied to a low-temperature formed film such as a silicon oxide film, a silicon oxynitride film, and a P-type non-single-crystal silicon film. At the same time, since hydrogen radicals are supplied to the film deposition surface in a positive manner according to the present invention, it enables us to form a high hydrogen concentration of 5 纟 or less at a low temperature of about 300 ° C. Quality polycrystalline silicon film. This is because the film formation is performed under the covering of hydrogen atoms from the film deposition surface with hydrogen radicals, and M results in the formation of a film having a high silicon atom concentration. The polycrystalline silicon film formed in this manner has a film quality equivalent to that of a conventional laser annealing process. Therefore, we can achieve the goal of reducing manufacturing costs without the need for a conventional laser annealing process. In addition, a structure formed by providing a plurality of magnets on the side surface of the vacuum bottle and previously used to provide a uniform plasma concentration in the vacuum bottle can be used in conjunction with the trenching according to the present invention to obtain a more uniform electricity. Pulp concentration. -27-I l · I t ---- ί ^.! -----Order ------! 1 (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) 4 6 7 5 6 2 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 6 V. Description of the invention () As mentioned earlier, the plasma CVD according to the present invention Device M and a thin-film forming method using the plasma CVD device allow our M silane gas to be used as a main material to form a high-quality non-single-crystal silicon film at a substrate temperature as low as 200 ° C. Non-single-crystal silicon film, or non-single-crystal silicon insulation film. In addition, since the decomposition efficiency of the material gas is improved by the formation of a high-concentration plasma, the use efficiency of the material gas is improved and the number of children who emit the gas is reduced. Therefore, a thin film formation method suitable for the environment is realized. In addition, we can also form a high-quality polycrystalline silicon film that requires a conventional laser annealing process by increasing the substrate temperature to about 30 ° C. In addition, since the present invention can be quickly applied to a larger-sized vacuum bottle Therefore, I can also apply the present invention to a thin film transistor formation method for a liquid crystal display, which uses a large-sized glass substrate with a diagonal dimension of about 1 meter. Those familiar with the conventional technology should be able to make various modifications to the examples without departing from the spirit and framework of the scope of the patent application attached to the present invention. The foregoing description and the drawings are provided for illustration purposes only. Therefore, we regard the foregoing description as an illustration rather than a limitation of the present invention. Reference symbol description 1 ..... Airless bottle (tank) 2 ..... First electrode 3 ..... First high frequency Power supply 4 ..... First adapter circuit -28- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS.) A4 specification (210 X 297 mm) 5α Economy Of Intellectual Property Bureau D- A7 B7 printed by the company V. Description of the invention (27 8 ..... Material gas ..... 2nd electrode substrate heater gas supply delivery line 9a ..... Gas injection port 10 ..... First Gas supply system 11, ... Exhaust device 12 ... Second high-frequency power supply 13 .. Second adapter circuit 14 .. Third commercial frequency power supply 15 .. Third adapter circuit 16 .. . • Crescent magnetic field formation 17 ... ..m 20…… second gas supply 糸 m -29-This paper size applies Chinese National Standard (CNS) A4 (2) 0 X 297 mm (Please read the notes on the back before filling this page)

Claims (1)

4&7562 Α8 Β8 C8 D8 申請專利fe圍 1 , 一種電漿C V D裝置，係藉由利用矽烷氣而形成非單晶 眇膜或是非單矽化合物膜，此g 有： -真空瓶（權），像用來於其内 經濟部智慧財產局員工消費合作社印制机 - 第一 電力的 進該真 -第二 面關 持基 -氣體 之間 面附 一種電 矽膜或 -真空 -第一 一電 空瓶 -第二 面關 板的 -氣體 導管 第二 薄片狀（平板狀）電極，係用Μ構成供應有高頻 第一電漿源Μ便依淋灑形成將第一材料氣體引 空瓯之内； 薄片狀電極，係依與該第一簿片狀電極呈面對 係的方式配置於該真空瓶內且含有一偭用來支 板的機構；Κ及 供應機構，係配置於該第一與第二薄片狀電極 Μ便將第二材料氣體引進該第二薄片吠電極表 近的區域之内。 漿C V D裝置，係藉由利用矽烷氣而形成非單晶 是非單晶矽化合物瞑，此| 有： 瓶（槽），係用來於其内導致放電的； 薄片狀電極，係用Μ構成供應有高頻電力的第 漿源Κ便依淋灑形式將第一材料氣體引進該真 之内； 薄片狀電極，偽依與該第一薄片狀電極圼面對 係的方式配置於該真空瓶内且含有用來支持基 機構；以及 供應機構，係包含一個含有許多氣體噴射璋的 且配置於該第一與第二薄片狀電極之間Μ便將 材料氣體引進該第二簿片狀電極表面附近的區 30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁> 457562 經濟部智慧財產局員工消費合作社印製 AS B8 C8 D8t、申請專利範圍 . 域之内。 3 .如申請專利範園第2項之電漿C V D裝置，其中係將該 導管配置於該第二薄片狀電極之上而使各氣體噴射埠 均勻地配置於該基板上方。 4 .如申請專利範圍第2項之電漿C V D裝置，其中係將該 導管處理成圓形或方形的線圈狀形式。 5 .如申請專利範圍第2項之電漿C V D裝置，其中該導管 是一種金屬導管，而該金屦導管則構成了供應有高頻 電力的第二電漿源。 6 .如申請專利範圍第1或2項之電漿C V D裝置，其中也 包括一天線機構，該夭線機構係配置成該氣體供應機 搆之各氣體噴射埠附近之區域內的第二電漿源。 7 .—種電漿C V D裝置，係藉由利用矽烷氣而形成非單晶 矽膜或是非單晶矽化合物膜，此裏；•辟有： -真空瓶（槽），係用來於其內導#冗電1心； -第一薄片狀電極，包含磁場形成機構以便彤成配置 於該薄片狀電極表面附近之區域内的新月形磁場且 用以構成供應有高頻電力的第一電漿源Μ便依涡灑 肜式將第一材抖氣體引進該真空瓶之内； -第二薄片狀電極，係依與該第一薄片狀電極圼面對 面關係的方式配置於該真空瓶内且含有用來支持基 板的機構；以及 -氣體供應機構，係配置於該第一與第二薄.片狀電極 之間Μ便將第二材料氣體引進該第二薄片狀電極表 - 3 1 - {請先閱讀背面之注意事項再填寫本頁) 策---- 訂---------線1 本紙張尺度適用_國國家標準（CNS)A4規格（210x 297公釐） 2 6 5 7 5 4 ABCD 六、申請專利範圍 勺 .1 二-0 C *πτ> 近漿是瓶 附電或空 面種膜真 1 矽 - 8 域置 ί 裝 區 D 單 内 之 槽 薄?#構將 一該 Μ 式 第於用彩 有料 應材 供 一 成第 矽係 晶 ， 極極 電電 吠狀 片片4 & 7562 Α8 Β8 C8 D8 applied for patent Fe1, a plasma CVD device, which uses a silane gas to form a non-single-crystal gadolinium film or a non-single silicon compound film, this g has:-a vacuum bottle (right), It is used for printing machines in the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-the first electric power source-the second side of the holding base-the gas is attached with an electric silicon film or-a vacuum-the first electric air bottle -The second side of the plate-the second sheet-shaped (flat-plate) electrode of the gas duct, which is composed of M and is supplied with a high-frequency first plasma source M, which is formed by showering to lead the first material gas into the hollow space; The sheet electrode is arranged in the vacuum bottle in a manner facing the first sheet electrode and contains a mechanism for supporting the plate; K and the supply mechanism are disposed in the first and the first The two sheet electrodes M introduce the second material gas into the area near the second sheet bark electrode. A slurry CVD device is a non-single-crystal silicon compound that is formed by using silane gas. This | has: a bottle (tank) that is used to cause a discharge in it; a thin-film electrode that is supplied with M The first plasma source K with high-frequency power introduces the first material gas into the true body in the form of a shower; the sheet-shaped electrode is arranged in the vacuum bottle in a manner of facing the first sheet-shaped electrode. And contains a support mechanism; and a supply mechanism, which includes a gas ejector containing a large number of gas jets and is disposed between the first and second sheet electrodes, and introduces a material gas near the surface of the second sheet electrode Area 30 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page> 457562 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives AS B8 C8 D8t. The scope of the patent application. Within the scope. 3. The plasma CVD device of item 2 of the patent application park, wherein the conduit is arranged on the second sheet electrode so that each gas injection port is uniform. It is arranged above the substrate. 4. The plasma CVD device according to item 2 of the patent application, wherein the tube is processed into a circular or square coil form. 5. The plasma CVD according to item 2 of the patent application. Device, wherein the tube is a metal tube, and the gold tube constitutes a second plasma source that is supplied with high-frequency power. 6. The plasma CVD device, such as the scope of patent application No. 1 or 2, also includes An antenna mechanism, the reed mechanism is configured as a second plasma source in the area near each gas injection port of the gas supply mechanism. 7. A plasma CVD device is formed by using a silane gas to form a non-single unit. A crystalline silicon film or a non-single-crystal silicon compound film, where: • There are:-Airless bottles (slots), which are used to conduct #Redundant 1 cores in it;-A first sheet electrode, including a magnetic field forming mechanism so that Tongcheng placed a crescent-shaped magnetic field in the area near the surface of the sheet electrode and used to constitute the first plasma source M supplied with high-frequency power, and introduced the first material shaking gas into the vacuum bottle according to the vortex method. Within;-the second sheet electrode, The first sheet-shaped electrode is disposed in a face-to-face manner in the vacuum bottle and contains a mechanism for supporting the substrate; and a gas supply mechanism is disposed between the first and second thin-plate electrodes. Introduce the second material gas into the second sheet electrode table-3 1-{Please read the precautions on the back before filling this page) Policy ---- Order --------- Line 1 Paper Size Applicable _ National Standard (CNS) A4 (210x 297 mm) 2 6 5 7 5 4 ABCD VI. Patent Application Scoop. 1 2-0 C * πτ > 1 Silicon-8 domains are installed. The grooves in the D sheet are thin. The structure will be used to form a silicon-based crystal with colorful materials and materials. 晶 眞 C马 tu— s β 形 置且 配場 成磁 形肜 便 月 灑 淋 依 13/ Μ 有 Κ 新源内 對基 面持 呈支 極來 電用 狀有 片含 簿且 一 内 第瓶 該空 與真 依該 係於 ，置 極配 電式 狀方 片的 薄係 二關 第面 的 埠 iEfj 嗔 灃 HWU» 氣 多 許 有 含 涸1 含 包 係 及 ， 以構 ; 機 搆應 機供 勺 豊 板氣 將區 便的 Μ 近 間附 之面 極表 電極 狀電 片狀 薄片 二薄 第二 與镅 一 該 第進 該引 於體 置氣 配料 且材 管二 導第 該 中 其 置 裝 D V C 漿 電 之 項 δ 或 7 第 圍 範 。 利 内專 之請 域申 如 9 磁磁 些郯 這相 ，各 鐵使 磁而 電上 是面 或表 鐵的 磁極 久電 永狀 多片 許潯 含一 包第 構該 機於 成置 形配 場係 磁鐵 t -------f 裝---------訂--------線 1 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 為^狀 互IJ$H 上 ί^V ;τ 青 極Μ第 在 D 該 鐵纟中 或 I 7 ~ , 含 〇 2’包 反^1極 圍 漿 電 之 項 其高 ，或 置 / 裝及 D V 芾 'J 機 控 度 溫 些 頻 電 nj $ 機 胞罾式Μ ^ 力重1| 围 電 極 狀 片 薄 行 平 是 的 用 使 法 方 成 形 膜 薄 D V C 式 淋 依 中 其 置 裝 D V C 漿 電 的 有 應 供 由 式 形 本紙張尺度適用中國囤家標準（CNS)A4规掊（210 X 297公f ) 2 6 5 8 8 8 8 ABCD 經濟部智慧財產局員工消費合作社印製 - t、申請專利範圍 高頻電力的該第一薄月狀電極供應第一材料氣體，並 於薄膜形成期間從一個與該第一薄片狀電極不同的氣 體供應機溝將第二材料氣體供應到該第二薄片狀電極 的表面上Q 1 2 . —種電漿式C V D薄膜形成方法，使用的是平行薄片狀 電極型式的電漿C V D裝置，其中依淋灑形式由供應有 高頻電力的該第一薄片狀電極供應第一材料氣體，而 於溥膜形成期間從一個與該第一簿片狀電極不同的氣 體供應機構將第二材料氣體供應到該第二薄片狀電極 的表面上，且將用於形成電漿的第二電漿源配置於該 氣體供應機搆之各氣體噴射埠附近的區域之内，並於 薄膜彤成期間藉由第二電漿源將由該氣體供應機構的 氣體轉換成離子或自由基。 1 3 . —種電槳式C V D薄膜形成方法，使用的是平行薄片狀 電極型式的電漿CVD裝置，其中依淋灑形式由供應有 高頻電力的該第一薄片狀電極供應第一材料氣體，而 於薄膜形成期間從一個與該第一薄片狀電極不同的氣 體供應機構將第二材料氣體供應到該第二薄片狀電極 的表面上，旦將用於形成電漿的第二電槳源配置於該 氣體供應機搆之各氣體噴射埠附近的區域之内.並於 薄膜肜成期間藉由第二電漿源將由該氣體供應機構的 氣體轉換成離子或自由基，在於落在1 〇微秒到1㈣毫 秒的循環週期內將高頻電力供應到受到開—關驅動的 該第一薄片狀電極上。 '33- 中國國家標準（CNS)A4規格（2】0 X 297公f ) --*----：----— 11.^· 1 ---— II . -------* 』 (請先閱讀背面之';i意事項再填寫本頁) Γ, Α8 Β8 C8 D8 申請專利範圍 ]4 .如申請專利範圍第1 3項之電漿式C \f D薄膜形成方法， 其中供應到該第二電漿源上的高頻電力也#於相同的 循環時間內受到開-關的驅動，且與供應到該第一薄 片狀電極上的高頻電力呈180度/相差的關係。g%. 15.如申請專利範圍第1卜13項：電漿式CVD薄膜形 成.方法，其中係將其頻率落^ 6 - 5 0 0百萬赫之間的 高頻電力供應到該第一簿片霍極及/或該第二電漿 源上。 ιδ 1 6 .如申ί專利範圍第U -1 3項之電漿式C V D薄膜形I τ ^ 成方法，其中係將其頻率落仟赫與1 3 , 5 6百萬赫 之間的高頻電力供應到該第'片狀電極上Μ便迆行 !用么 加熱 !-φ 經濟部智慧財產局員工消費合作社印制^ 1 7 .如申請專利範圍第11 - 1 3項；的電漿式C V D薄膜形 成方法，其中供應到該第二簿片狀電極上的高頻電力 也會於相同的循環時間内受到開-關的驅動，且與供 應到該第一簿片狀電極上的高頻力圼} 8 0度相位差 的丽係。 Ι^β #今' 1 8 .如申請專利範圍第1 1 - ] 3項電漿式C V D薄膜形 成方法，其中該非單晶矽廣磷的非單晶矽膜、或 是非單晶氮化矽膜係籍由從該第一薄片狀機構引 進矽烷氣、矽烷氣和磷化氫體、矽烷氣和氨氣或氮氣 以及至少從該第二氣體供應機構引進氫氣或是氫氣和 稀有氣體。 3 4 本紙張尺度適用中國國家標準（CNS)A4規掊（2J〇x 297公釐） --V-----------i^--------訂---------線L· (請先閱讀背面之注意事項再填寫本頁)Crystal 眞 C Ma tu— s β-shaped and magnetic field configuration, then the monthly shower shower 13 / Μ There is a new source in the new source to support the base surface of the poles, there is a tablet with a book, and the first bottle is empty The connection with Zhenyi should be based on the thin-walled second-level port iEfj 嗔 沣 HWU »of the pole-distribution-shaped square plate. There are many 涸 1 and 包 1 inclusive systems, and the structure should be provided by the organization. Place the electrode sheet-like electric sheet-like sheet on the surface of the M near the second, and the second one and the second one into the body, and the second one should be installed with the DVC plasma electricity. Term δ or 7 range. Li Nei specially asked Yushen Ru 9 magnetic phase, each iron makes the magnetic pole is the surface or the surface of the iron pole, long-lasting permanent multiple pieces of Xu Xu, including a pack of the machine in the shape of the field Department of magnet t ------- f installed --------- order -------- line 1 (Please read the precautions on the back before filling this page) Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative as 状 状 mutual IJ $ H 上 ίV; τ Qingji Mdi is in the iron shovel or I 7 ~, which contains the item of 22 ′ package anti ^ 1 pole enclosing electricity. OR placement / installation and DV 芾 'J machine control temperature and frequency nj $ machine cell type M ^ force weight 1 | the surrounding electrode-shaped sheet is thin and flat, it is used to make the French formed film thin DVC type shower The supply of DVC plasma electricity should be printed by the Chinese paper standard (CNS) A4 (210 X 297 male f) of the paper size standard 2 6 5 8 8 8 8 ABCD Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs- t. The first crescent-shaped electrode with high-frequency power applied for a patent range supplies a first material gas, and is The gas supply machine grooves of different sheet electrodes supply the second material gas to the surface of the second sheet electrode. Q 1 2. A plasma CVD thin film formation method using a parallel sheet electrode type plasma. A CVD device in which a first material gas is supplied by the first sheet electrode supplied with high-frequency power in a shower form, and the first sheet electrode is supplied with a gas from a gas supply mechanism different from the first sheet electrode during the formation of the diaphragm. Two material gases are supplied to the surface of the second sheet electrode, and a second plasma source for forming a plasma is arranged in a region near each gas injection port of the gas supply mechanism, and formed into a thin film. During this period, the gas from the gas supply mechanism is converted into ions or radicals by a second plasma source. 1 3. A method for forming an electric paddle CVD thin film using a parallel sheet electrode type plasma CVD apparatus, wherein a first material gas is supplied by the first sheet electrode supplied with high-frequency power in a shower manner And during the film formation, a second material gas is supplied to the surface of the second sheet electrode from a gas supply mechanism different from the first sheet electrode, and a second electric paddle source for forming a plasma is used It is arranged in the area near the gas injection ports of the gas supply mechanism. The gas from the gas supply mechanism is converted into ions or radicals by a second plasma source during the film formation, which lies in 10 micrometers. High frequency power is supplied to the first sheet-shaped electrode driven on-off in a cycle period from seconds to 1 millisecond. '33-China National Standard (CNS) A4 specification (2) 0 X 297 male f)-* ----: -------- 11. ^ · 1 ----- II. ------ -* "(Please read the" I "on the reverse side and fill in this page first) Γ, Α8 Β8 C8 D8 Patent application scope] 4. For example, the plasma type C \ f D film formation method of the patent application scope item 13 The high-frequency power supplied to the second plasma source is also driven on-off within the same cycle time, and is 180 degrees / different from the high-frequency power supplied to the first sheet electrode. Relationship. g%. 15. According to the scope of patent application No. 1 to 13: plasma CVD thin film formation method, wherein the high-frequency power whose frequency falls between ^ 6-50 million MHz is supplied to the first The sheet electrode and / or the second plasma source. ιδ 1 6. The method for forming plasma CVD thin film I τ ^ in the U.S. patent scope No. U-1 3, in which the frequency falls between the high frequency and the high frequency between 13 and 56 MHz Electricity is supplied to the first sheet electrode, and it will be hot! What to use for heating! -Φ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 1 7. If the scope of patent applications is 11-13; A CVD thin film forming method, in which the high-frequency power supplied to the second sheet-shaped electrode is also driven on-off in the same cycle time, and is the same as the high-frequency force supplied to the first sheet-shaped electrode. } The beauty with a phase difference of 80 degrees. Ι ^ β # 今 '1 8. According to the patent application scope No. 1 1-] 3 plasma CVD thin film formation method, wherein the non-single-crystal silicon phosphorous non-single-crystal silicon film, or the non-single-crystal silicon nitride film The system consists of introducing silane gas, silane gas and phosphine gas, silane gas and ammonia gas or nitrogen gas from the first laminar mechanism and at least introducing hydrogen gas or hydrogen gas and rare gas from the second gas supply mechanism. 3 4 This paper size is subject to Chinese National Standard (CNS) A4 (2J0x 297 mm) --V ----------- i ^ -------- Order-- ------- Line L · (Please read the precautions on the back before filling this page)
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