^___I 經濟部智慧財產局員工消費合作社印製 A7 B7 發明說明（/ ) 發明領域：f 本發明是一種檢視光罩圖案分段曝光對準的方法，特 別是一種利用疊合方塊(box-in-box)原理，以決定於同一 晶粒上分段曝光後圖案（pattern)對準精準度的方法。 發明背景： 半導體製程中，曝光是為了定義出半導體基板中各層 薄膜的圖案（pattern)及雜質（dopants)區域以形成所需之 電路佈局設計，目前半導體製程上普遍使用步進機 (Stepper)來進行曝光。然而，在使用步進機進行曝光時’ 其步進機有一定的透鏡及網框(Reticle)大小限制，以ASML PAS5500/100C機台為例，其微影一次之區域可容忍的最大 尺寸為22mmx 22mm或27.4nunx 11.4_，但當某些設計特殊 的晶片曝光區域大‘小超出上述步進機的規格限制時，就必 須對此種晶片進行分段多次曝光(Multi-exposures)，這樣 一來便產生在同一層中多次曝光的圖案該如何對準的問 題。 為此，本發明欲揭露之一種檢視光罩圖案分段曝光對準 的方法，是應用於同一層次中多次曝光時，圖案前後左右 對準之用，其中兩光罩圖案各設有重疊區，使兩光罩圖案 可重疊在一起’而其對準圖案係採取疊合方塊(b〇x_irHD〇x) 圖案’其中所述之疊合方塊圖案係設於各光罩圖案之重疊 區部份之邊緣。當上述之光罩圖案的重疊區重疊並曝光顯 影後，使用疊合儀器量測，便可決定同層多次曝光圖案對 準後使否有左右或前後偏移之狀況。 2 本紙張尺度適旬中國國家標準（CNS)A4規格（210 X 297公釐） ----.--1------ 裝--------訂.--------峻 (請先閱讀背面之注意事項再填寫本頁) 45 5 7 A7 B7 五、發明說明（ 發明之概述： 光對=要目的係提供一種檢視光罩圖案分段曝 安、糸以疊合方塊(b〇X-irHX>X)作為對準圖 案’將光罩_分割為至少二部份來進行曝光，於各部^ 邊緣設旦置對準圖案以及重4區，當重叠區重疊並於曝光 後’顯影出的對準狀況可決定曝光圖案對準的精破度，而 可應用於同❹次甚至於高次數之曝光製程中。 本發月之-人要目的係在提供-種檢視光罩圖案分段曝 光對準的方法，其可使㈣子儀膽查_光罩對準之狀 況即可，而知光罩對準誤差之情形。 為了達到上述之各種目的，本發明提供一種檢視光罩 圖案分段曝光對準的方法，錢用了以下的方法：首先， 將光罩11案分割輕少兩部絲進行.光，上述之兩部份 係分為第-鮮_及第二鮮_，且此兩光罩圖案皆 設有重叠區方便使兩光罩贿重疊在m進行第 一光罩圖案之曝光，而上述之第一光罩圖案之重疊區邊緣 設置第一對準圖案’而上述之其第一對準圖案設計為不曝 光區；接續，進行第二光罩圖案之曝光，而上述之第二光 罩圖案之重疊區邊緣設置第二對準圖案，上述之第二對準 圖案可與第一對準圖案重疊，且其圖案係由兩個大小不同 之矩形圖案重疊所组成之第二對準圖案，而位於小矩形内 設計為曝光區’位於小矩形之外大矩形内之範圍設計為不 曝光區。經顯影完後，使用疊合儀器量測對準圖案上X及γ 本纸張尺度適角中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之>3-意事項再填寫本頁) -------1 訂---------竣 經濟部智慧財產局員工消費合作社印製 455747 光罩圖案 卜第一對準圖案 基板 15-切割道 100-光阻 A7 B7 五、發明說明（>) 軸方向上之光阻寬度與理想值比較，便可決定曝光圖案接 合的準確度。 圖式簡要說明： 圖一係顯示本創作實施例中光罩A及光罩B及其邊緣之 對準圖案設計之頂視示意圖。 圖二係顯示本創作實施例中光罩A及光罩B及其邊緣之 對準圖案設計經微影後將圖案複製組合於基板之頂視示意 圖。 .圖三係顯示本創作實施例中光罩A及光罩b之對準圖案 a又sf經微影步驟後’將圖案複製組合於基板之剖面示意圖。^ ___ I Printed by A7 B7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economics (7) Field of Invention: f The present invention is a method for inspecting and aligning mask pattern segmented exposures, especially using a box-in -box) principle, a method to determine the pattern alignment accuracy after segmented exposure on the same die. Background of the Invention: In the semiconductor process, exposure is to define the pattern and dopants regions of each thin film in the semiconductor substrate to form the required circuit layout design. At present, stepper is commonly used in semiconductor processes. Make an exposure. However, when using a stepper for exposure, the stepper has certain lens and frame size restrictions. Taking the ASML PAS5500 / 100C machine as an example, the maximum size of the area that can be tolerated at one time is: 22mmx 22mm or 27.4nunx 11.4_, but when the exposure area of some special design wafers is larger or smaller than the above-mentioned stepper's specification limit, it is necessary to perform multi-exposures on this kind of wafer. The problem arises how to align the patterns exposed multiple times in the same layer. Therefore, a method for segmented exposure alignment of a mask pattern to be disclosed in the present invention is applied to align the pattern front to back and left to right when multiple exposures are performed in the same layer, and two mask patterns are each provided with an overlapping area. So that the two mask patterns can be overlapped together, and the alignment pattern is a superimposed block (b〇x_irHD〇x) pattern, wherein the superimposed block pattern is set in the overlapping area portion of each mask pattern Of the edge. After the overlapping areas of the mask patterns mentioned above are overlaid and exposed for development, measurement can be made using a superimposed instrument to determine whether the multiple exposure patterns in the same layer are aligned for left-right or front-to-back offset. 2 This paper is suitable for China National Standard (CNS) A4 specification (210 X 297 mm) ----.------------------------- ---- Jun (please read the precautions on the back before filling this page) 45 5 7 A7 B7 V. Description of the invention (Overview of the invention: light pair = the purpose is to provide a method to view the mask pattern segmented exposure, Use the overlapping block (b〇X-irHX> X) as the alignment pattern 'divide the photomask_ into at least two parts for exposure, set an alignment pattern on the edge of each part ^ and repeat 4 areas. When the overlap area The alignment condition that is overlapped and 'developed after exposure can determine the precision of the alignment of the exposure pattern, and can be applied to the exposure process of the same or even a high number of times. The purpose of this month is to provide -A method for inspecting the mask pattern segmented exposure alignment, which can make the meter check the status of the mask alignment, and know the situation of the mask alignment error. In order to achieve the above-mentioned various purposes, this The invention provides a method for inspecting and aligning a mask pattern by segmented exposure. Qian used the following method: First, the mask 11 is divided into two pieces of light and light. The two parts are divided into the first-fresh_ and the second-fresh_, and the two mask patterns are provided with overlapping areas to facilitate the two masks to be overlapped at m for the exposure of the first mask pattern. A first alignment pattern is set at the edge of the overlapping area of a mask pattern, and the above-mentioned first alignment pattern is designed as a non-exposure region. Then, the second mask pattern is exposed, and the second mask pattern is exposed. A second alignment pattern is set at the edge of the overlapping area. The second alignment pattern described above may overlap the first alignment pattern, and the pattern is a second alignment pattern composed of two rectangular patterns with different sizes overlapping each other. The inside of the small rectangle is designed as an exposure area. The area inside the large rectangle outside the small rectangle is designed as a non-exposed area. After development, measure the X and γ on the alignment pattern using a superimposed instrument. Standard (CNS) A4 specification (210 X 297 mm) (Please read the > 3-Matters on the back before filling out this page) ------- 1 Order --------- Complete Economy Ministry of Intellectual Property Bureau Employee Cooperative Cooperative Printed 455747 Mask Pattern First Alignment Pattern Substrate 15-Cut Road 100-Photoresist A7 B7 V. Explanation of the invention (>) The comparison of the photoresist width in the axial direction with the ideal value can determine the accuracy of the exposure pattern joining. Brief description of the drawings: Figure 1 shows the creative embodiment Top schematic view of the alignment pattern design of the photomask A, the photomask B, and their edges. Figure 2 shows the alignment pattern design of the photomask A, photomask B, and their edges in the creative embodiment. The top view of the pattern copying and combining on the substrate. Fig. 3 is a cross-sectional schematic view of the pattern copying and combining on the substrate after the lithography step of the alignment patterns a and sf of the mask A and the b in the creative embodiment.
圖號說明： I A-光罩圖案 e-缓衝區 2-第二對準圖案 11_不曝光區 22-曝光區 110-光阻 發明詳細說明： 在微影過程中’若獅所錢定之晶_案太大，使 得步進機-次曝光所能製Μ的鮮随太彳、科符合上 述之晶粒圖案時，所述晶粒圖案便無法一次就製作完成， _ _ 4 本紙張尺度適角中國國家標準（CNS)A4規格------- -n n n It n * B ί IB I it ϋ n I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4557 4 7 A7 __________B7 五、發明說明（士） 本發明乃使m的方法來加以改良：賴需進行微影的 晶粒圖案分割為二部份來進行曝^，如果案為左右 方向過長’料#ι為左右鱗份；如果晶粒_為前後方 向過長’就分割為前後兩部份，接下來以分割成前後兩部 份為例（光罩A及光罩B)，探討光罩圖案對準問題，如圖一 所不，如果，晶粒必須分割成更多次的曝光，則仍是依本 發明的精神實施之。 本發明案係採取只需使用小空間之對準圖案設計，同 樣地運用於同一層多次數之微影製程中。在以下的詳細說 明中’將配合圖式與具體實施例說明本發明的原則與精神。 本發明案係以晶粒圖案分割成前、後兩部份為例，前 部份的光罩細鮮A來絲；後部份的料係以光罩B 來表示。首先，請參閱圖一所示’而本發明案的對準圖案 設計位置，係在光罩A圖案右邊緣切割道丨5之下側設置一 個第-對準圖案1，其上述之第—對準圖案丨形狀為正方形 大小约16x 16_，而此第一對準圖素i設計為不曝光區， 也就是微影過程中，留下正方形之第一對準圖案i底下的 光阻，而於光罩A圖案下方邊緣設有一塊重疊區e，方便在 後續製程中與光罩B重疊之用，如圖一所示；同樣地’在 上述之光罩B，其與光罩A同方向即右邊緣切割道15之上 側也設置一個對準圖案2，其與光罩A之第一對準圖案i — 正方形光罩圖案不同之處’在於光罩B之第二對準圖_荦2 較為複雜，其上述之第二對準圖案2係含有兩個大小不同 之正方形圖案重疊組成，如圖一所示，其中，大正方形内 5 本紙張尺度適W中國國家標準（CNS)A4規格（210 X 297公t ) --------；----;---^-------—訂---------吹 {請先閱讀背面之注意事項再填寫本頁) 45 57 ★ A7 I---------------- B7___ —__ 五、發明說明（/) 及小正謂賴_蚊為科紐n，喊圍在小正方 形内之區域設定為曝光區22，其上述之曝光區22之面積為 8x 8 //m。 上狀兩次光罩使祕基板時，做光罩A之重叠區e 與光罩B之重叠區e重叠在一起時，如圖二所示，若兩次 微影過程中無任何誤差存在，其上述之第一對準圖案i及 第二對準圖案2會如圖二所示完全重疊在—起，經此兩次 的曝光程序後’經顯影完後僅會留下剩餘的第一對準圖案丄 的不曝光區之大小範圍，及經顯影完後僅留下扣除第二對 準圖案2之曝光區22大小範圍後剩餘的第一對準圖案土的 不曝光區之大小範圍，接續，使用疊合量測光學儀器（KLA) 檢查第一對準圖案1中不曝光區與第二對準圖案2中曝光 區22間的距離，即可知微影過程中的誤差情況。而上述使 用疊合里測儀器檢查時，如圖二所示，分別檢測光罩對準 圖案中01/02/03/04之寬度，分別計算（01/02)，（03/04) 之差值，即知X/Y方向之偏移寬度，也就是X軸及γ軸方 向的光阻寬度。 以下詳細討論其基板10上之光阻100，經上述之光罩 經 對準圖案微影步驟後之狀況，如圖三所示，首先，請 | 參閱圖三A所示’經光罩A曝光後，由於光罩A之第一對 智1 | 準圖案1為不曝光區，因此，於第一對準圖案1底下之光 棄 阻100在經第一次曝光後會完整的保留下來，接著，如上 孟 所述’進行第二次曝光，也就是進行光罩B之曝光工作， f 而其第二對準囷案2之圖案設計分別有不曝光區丨丨及曝光 作 社 印 製 6 1 本紙張尺度中國囤家標準（CNS)A4規格（210 X 297公釐）Description of drawing number: I A-mask pattern e-buffer area 2-second alignment pattern 11_ non-exposed area 22-exposed area 110- photoresist Detailed description of the invention: During the photolithography process The size of the crystal pattern is too large, so that when the stepper-time exposure can produce the fresh grain of Taiji and Ke, the grain pattern cannot be completed in one time. _ _ 4 paper size Appropriate Chinese National Standard (CNS) A4 Specifications ------- -nnn It n * B IB I it it n I (Please read the precautions on the back before filling this page) Employees ’Consumption of Intellectual Property, Ministry of Economic Affairs Cooperative printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative, 4557 4 7 A7 __________B7 V. Description of the Invention (Justice) The present invention is to improve the method of m: the grain pattern that requires lithography is divided into two parts Let ’s expose it. If the case is too long in the left and right direction, the material is left and right scales; if the grain is too long in the front and back direction, it is divided into two parts. (Mask A and Mask B), to discuss the alignment of the mask pattern, as shown in Figure 1, if Grain needs to be divided into more exposure times, it is still under this embodiment of the spirit of the invention. The present invention adopts an alignment pattern design that only requires a small space, and is similarly applied to the photolithography process of the same layer multiple times. In the following detailed description, 'the principles and spirit of the present invention will be explained with drawings and specific embodiments. In the present invention, the grain pattern is divided into two parts, the front part and the rear part, for example, and the fresh part A is silk; the latter part is represented by the photomask B. First, please refer to FIG. 1 ', and the alignment pattern design position of the present invention is provided with a first-alignment pattern 1 on the lower side of the right edge cutting path of the mask A pattern. The quasi-pattern shape is a square with a size of about 16x 16_, and this first alignment pixel i is designed as an unexposed area, that is, during the photolithography process, the photoresist under the square first alignment pattern i is left, and An overlapping area e is provided at the lower edge of the pattern of the mask A, which is convenient for overlapping with the mask B in the subsequent process, as shown in Figure 1. Similarly, in the above-mentioned mask B, it is in the same direction as the mask A. An alignment pattern 2 is also provided on the upper side of the right edge cutting lane 15, which is different from the first alignment pattern i of the mask A—the square mask pattern 'is in the second alignment pattern of the mask B_ 荦 2 It is complicated. The above-mentioned second alignment pattern 2 is composed of two square patterns of different sizes overlapping, as shown in Fig. 1. Among them, 5 papers in a large square conform to the Chinese National Standard (CNS) A4 specification (210 X 297 male t) --------; ----; --- ^ --------- order --------- blowing {please first Read the notes on the reverse side and fill out this page) 45 57 ★ A7 I ---------------- B7___ —__ V. Description of the invention (/) and Xiaozheng means Lai _ Mosquito family Button n, the area surrounded by the small square is set as the exposure area 22, and the area of the above-mentioned exposure area 22 is 8x8 // m. When the photomask is placed twice to make the substrate, when the overlap area e of the mask A and the overlap area e of the mask B overlap, as shown in Figure 2, if there are no errors during the two lithography processes, The above-mentioned first alignment pattern i and second alignment pattern 2 will completely overlap each other as shown in FIG. 2. After these two exposure procedures, only the remaining first pair will be left after development. The size range of the non-exposed area of the quasi-patterned pattern, and the size range of the non-exposed area of the first alignment pattern soil remaining after deducting only the size range of the exposed area 22 of the second alignment pattern 2 after development, continued By using a superposition measuring optical instrument (KLA) to check the distance between the unexposed area in the first alignment pattern 1 and the exposed area 22 in the second alignment pattern 2, the error situation in the lithography process can be known. When the above-mentioned inspection is performed using a stacking measuring instrument, as shown in Fig. 2, the width of 01/02/03/04 in the mask alignment pattern is detected, and the difference of (01/02) and (03/04) is calculated respectively. Value, that is, the offset width in the X / Y direction, that is, the photoresistance width in the X-axis and γ-axis directions. The following is a detailed discussion of the photoresist 100 on the substrate 10 after passing through the above-mentioned mask through the alignment pattern lithography step, as shown in Figure 3. First, please | see Figure 3A 'exposure through the mask A Later, because the first pair of wise 1 | quasi-pattern 1 of photomask A is a non-exposed area, the light discard 100 under the first alignment pattern 1 will be completely retained after the first exposure, and then According to the above-mentioned Meng '' the second exposure, that is, the exposure of the mask B, and the pattern design of the second alignment case 2 has non-exposed areas, respectively, and printed by the exposure agency 6 1 Chinese paper standard (CNS) A4 size (210 X 297 mm)
五、發明說明（‘） C靖先閱讀背面之注意事項再填寫本頁) 區22 ’如圖一所示。因此，經曝光及顯影步驟後，其光阻 100僅有部份光阻11_保留下來，從另一角度而言，也就 是位於第二鮮_ 2巾曝光㈣之修猶去，而接著 使用疊合量測儀器(關量_，如前所述需量測光罩對準 圖案中x’-o及O-y，方向之光阻寬度，在圖三B'c中所顯示 的即是針對光罩對準圖案中χ，_〇及〇〜y，方向之剖面示意 圖’係使用疊合光學儀器（KU)量測圖三β、c中基板101 殘餘之光阻110的寬度，便可知光罩Α及β間之χ輛及γ 軸的誤差，如果兩二欠光罩微影触間無誤差產生，所測到 之x-o及Ο-y’方向的光阻11〇寬度為，若量測到的寬 度不合理論值時，此時，兩層光罩對準間便有誤差產生。 綜上所述’本發明所提供之雙層光罩圖案對準較習知 技術具有下列優點： 1. 本發明中所設計的對準圖案只佔小空間，可容忍多層 次圖案之使用。 2. 本發明中係可使用高效率之機器量測圖形的對準情 形。 經濟部智慧財產局員工消費合作社印製 雖然本發明已藉實施例加以說明，但理應瞭解在不違背 本發明所附申請專利範圍内所界定之廣義精神和觀點情況 下，上述說明係以較佳實施例來闡述本發明，而非限制本 發明，並且熟知半導體技藝之人士皆能明暸，適當而作些 微的改變及調整，仍將不失本發明之要義所在，亦不.脫離 本發明之精神和範圍。 7 本紙張尺度適财關家標準（CNS)A4規格（21D x 297公爱〉V. Description of the invention (') C Jing read the notes on the back before filling in this page) Area 22' as shown in Figure 1. Therefore, after the exposure and development steps, only a part of the photoresist 100 of the photoresist 11_ is retained. From another perspective, it is located at the second fresh _ 2 towel exposure. Superimposed measuring instrument (off-quantity_, as mentioned above, the photoresistance width in the direction of x'-o and Oy in the alignment pattern of the photomask needs to be measured, as shown in Figure 3 B'c is for light Schematic cross-sectional view of the directions of χ, _〇 and 〇 ~ y in the mask alignment pattern. 'The width of the remaining photoresist 110 on the substrate 101 in Figure 3 β and c is measured using a laminated optical instrument (KU), and the mask can be known. The χ and γ axis errors between A and β, if there are no errors between the two under-mask lithography contacts, the measured width of the photoresistor 11 in the xo and 0-y 'directions is, if measured, When the width of the mask does not match the theoretical value, an error occurs between the alignment of the two layers of masks. In summary, the two-layer mask pattern alignment provided by the present invention has the following advantages over conventional techniques: 1. This The alignment pattern designed in the invention only takes up a small space and can tolerate the use of multi-level patterns. 2. In the present invention, a high-efficiency machine can be used. Graphic alignment situation. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Although the present invention has been illustrated by embodiments, it should be understood that without departing from the broad spirit and viewpoints defined in the scope of the patents attached to the present invention, The above description is to illustrate the present invention with a preferred embodiment, but not to limit the present invention. Those skilled in the art of semiconductors can understand that making appropriate changes and adjustments will still not lose the essence of the present invention. . Departs from the spirit and scope of the present invention. 7 The paper size is suitable for financial standards (CNS) A4 (21D x 297)