TW455525B

TW455525B - Method for improving chemical mechanical polishing of tungsten metal layer

Info

Publication number: TW455525B
Application number: TW89119884A
Authority: TW
Inventors: Ke-Wei Chen; Ting-Jiun Wang; Ming-Je Li; Ying-Lang Wang
Original assignee: Taiwan Semiconductor Mfg
Priority date: 2000-09-26
Filing date: 2000-09-26
Publication date: 2001-09-21

Abstract

A method for improving a chemical mechanical polishing (CMP) of a tungsten metal layer to increase the output of the process and the operation life of a polishing pad is disclosed. The method comprises feeding a wafer; uses a first hard polishing pad to remove the rough surface thereof and increase the productivity. During the first polishing, injects a polishing slurry at an amount more than the later polishing operations and increasing the load thereof; uses a robot arm to transport the wafer to a second polishing pad, which uses a soft polishing for removing the remaining tungsten layer to a specified amount; and transports the wafer to a third polishing pad for using a slurry of a polishing oxide layer to polish the oxide layer for making the tungsten plug and/or wire higher than the peripheral oxide layer.

Description

455525 五、發明說明（ο 發明領域：械式研磨的製程，特別是指 ’再以軟式研磨墊細磨以改善程中研磨墊壽命及晶圓研磨本發明係有關於化學/機一種先硬式研磨墊進行研磨鶴金屬化學/機械式研磨的製 1產出量之方法。發明背景 I ULSI製程中，隨晶片各製程的進行，將產生高低起伏 i之介電層外觀，為促使微影圖案之轉移較為精確，及金屬 :内連線製程變得更容易（防止斷線或厚薄不均）通常就需要 i在適當製程步驟之後就進行化學續械式研磨的製程以產 ;生一平坦的表面。平坦化製程的初步，通常係利用旋塗式石夕酸玻璃SOG的高流動性填補—些化學氣相沉積法難以覆蓋之表面結構，或金屬層與金屬層間的間隙（gap)。經回 ΐ m通播常需藉*回敍才能獲得平坦化，然而儘管 == 率要控制於1:1並不容易，特別疋丰導體氣私已進入深次微米的度，更加困難。受運到所而之干坦述困=發W研製㈣稱⑽，便是另—種因應上硬度極高不僅以約至2加磨顆粒k供像磨刀式的機械式研磨，且由於 455525 |五、發明說明（2)455525 5. Description of the invention (ο Field of the invention: mechanical polishing process, especially means' fine polishing with a soft polishing pad to improve the life of the polishing pad and wafer polishing in the process] The present invention relates to a chemical / mechanical first hard polishing A method for producing 1 output by polishing metal crane chemical / mechanical polishing pads. BACKGROUND OF THE INVENTION In the ULSI process, as the wafer processes are carried out, the appearance of the dielectric layer with undulations i will be generated. More accurate transfer and metal: the interconnect process becomes easier (prevents disconnection or uneven thickness), usually requires a chemical continuous grinding process after the appropriate process steps to produce; a flat surface The initial stage of the planarization process is usually filled by the high fluidity of spin-coated glass acid SOG—some surface structures that are difficult to cover by chemical vapor deposition, or the gap between the metal layer and the metal layer.通 m broadcasts often need to borrow * retelling to get flattening, but although it is not easy to control the == rate to 1: 1, it is especially difficult for the Fengfeng conductor to enter the sub-micron degree. When transported to the ground, it is frank to say that it is difficult to develop. It is another type—corresponding to the extremely high hardness, not only about 2 to add grinding particles k for mechanical grinding like a sharpening knife, but also because of 455525 | Five, description of the invention (2)

I |利用有如化學助劑’例如氧化劑及有機溶劑，提供化學反丨應以進行化學移除，因此已廣範運用於各種半導體製程。一般而言’只要參數控制得宜’ CM P就可以提供9 4 %以上要求的平坦度。此外，CMP也經常用以提供對於鎢插塞或銅插塞金屬及内連線鑲嵌製程，導線溝渠與插塞金屬溢出内連線介電層上方的金屬層之去除。一般認為且廣為被接受之CM P研磨金屬層的機制是金屬層先形成金屬氧化層，然後再如氧 !化層的去除機制類似（即先產生氫氧化作用I | utilizes chemical additives such as oxidants and organic solvents to provide chemical reactions for chemical removal, so it has been widely used in various semiconductor processes. In general, as long as the parameters are properly controlled, CM P can provide a flatness of more than 94%. In addition, CMP is also often used to provide a tungsten plug or copper plug metal and interconnect damascene process, with the lead trench and plug metal overflowing the metal layer above the interconnect dielectric layer. It is generally accepted that the widely accepted mechanism of CMP grinding metal layers is that the metal layer first forms a metal oxide layer, and then the removal mechanism is similar to that of the oxide layer (that is, the first generation of hydroxide effect)

J l(hydroxylation)再與研磨漿鍵結，鍵結鍵斷開脫離）， i待金屬氧化層去除後，再被研磨漿侵蝕再重新產生氧化護層（passivation) ’除去。上述的研磨漿是由研磨墊所攜帶，研磨塾係一種聚亞胺酯（polyurethane)細胞狀發泡材 j i料可以攜帶研磨黎以對晶圓進行研磨。而晶圓係置於研磨墊上’晶圓由一加荷重於晶圓上的轉軸相對於研磨墊運動而進行研磨。 i 就已知的各種化學氣相沉積法沉積鎢金屬層於底材時而言’沉積的鎢金屬層不但具有高應力且表面粗糙’一般 ;相信鎢金屬層的粗糙係起緣於嫣薄膜（小於2 0 0 〇埃）由最初細小的晶粒，隨沉積的進行，嫣晶粒沿著成長方向轉變成 I柱狀晶’並隨沉積厚度増加而增加枉狀晶長度’而使表面呈現高度粗糙。且由於鎢金屬具有高硬度及高應力包含於 !J l (hydroxylation) is then bonded to the polishing slurry, and the bond bond is broken and detached), i After the metal oxide layer is removed, it is corroded by the polishing slurry and a oxidation protection layer (passivation) is removed. The above-mentioned polishing slurry is carried by a polishing pad, and the polishing material is a polyurethane cell foamed material j i which can carry a polishing compound to polish the wafer. The wafer is placed on the polishing pad. The wafer is polished by a rotating shaft loaded on the wafer relative to the polishing pad. i As far as various chemical vapor deposition methods are known for depositing tungsten metal layers on substrates, the 'deposited tungsten metal layer not only has high stress and rough surface'; it is believed that the roughness of the tungsten metal layer originates from the Yan film ( Less than 2000 angstroms) From the initial small grains, as the deposition progresses, the Yan grains transform into I columnar crystals along the growth direction and increase the length of the crystalline grains as the thickness of the deposit increases. Rough. And because tungsten metal has high hardness and high stress included in!

第5頁 4 5 5 5 2 5 i五、發明說明（3) 其中。 ! 為降低CMP進行時對研磨塾的衝擊，傳統上對於插塞 I金屬鎢之CMP製程係使用兩道研磨平台，在研磨過程中’ I晶圓上高點（high sP〇t)與研磨墊接觸’因此將被除去而 i產生平坦化。第一種應用方法是第一研磨平台與第二研磨平台都是使用硬式研磨墊’例如台灣應材（AM AT )的機台或 I者第二種應用方法是兩研磨平台都是軟式研磨墊’如ipec 公司βPage 5 4 5 5 5 2 5 i. Description of the invention (3) Among them. In order to reduce the impact on polishing 塾 during CMP, traditionally, the CMP process for plug I metal tungsten uses two polishing stages. During the polishing process, the wafer's high point (high spot) and polishing pad are used. The contact 'will therefore be removed and i will be flattened. The first application method is that the first polishing platform and the second polishing platform both use hard polishing pads, such as Taiwan's Applied Materials (AM AT) machine or I. The second application method is that both polishing platforms are soft polishing pads. 'Such as ipec company β

I 在第一種方法中的第一研磨平台用以去除鎢金屬層的粗糙面，其研磨墊係使用含有孔洞較小且多的材質製成，如圖一 Α所示’全新的研磨墊的孔洞約為3 0 - 5 Ο ν m的大小，對鎢研磨而言研磨漿組成包括氧化鋁粉、氰化鐵鉀丨（K3Fe(CN) 6)、二氫磷酸鉀（KH2P〇4)等。pH值則控制在5至6. | 5左右。硬式研磨墊好處是研磨墊的壽命通常較長。研磨速率高’然而，產出量卻要比軟式研磨墊法低。這是因為硬式研磨墊通常在研磨一片後，所有孔洞就幾乎被研磨衆及研磨下來的顆粒所阻塞，因此當研磨約3 0 - 4 0秒後，就 |需對第—研磨平台的研磨墊，施以清除阻塞的研磨塾活化’或說再生處理（condition treatment)。在此同時’晶圓移至第二研磨平台，再次以相同配方的研磨激對晶圓進行研磨拋光處理，以去除鎢金屬插塞上I The first polishing platform in the first method is used to remove the rough surface of the tungsten metal layer. The polishing pad is made of a material with small and many holes, as shown in Figure 1A. The size of the pores is about 3 0-5 0 ν m. For tungsten grinding, the composition of the slurry includes alumina powder, potassium ferricyanide (K3Fe (CN) 6), potassium dihydrogen phosphate (KH2P04), and the like. The pH is controlled between 5 and 6. | 5. The advantage of a hard abrasive pad is that the life of the abrasive pad is generally longer. The polishing rate is high ', however, the throughput is lower than that of the soft polishing pad method. This is because hard grinding pads usually have almost all holes blocked by the grinding mass and the particles after grinding one piece. Therefore, after grinding for about 30-40 seconds, it is necessary to use the grinding pad of the first grinding platform. , To remove the obstructed grinding 塾 activation, or regeneration treatment (condition treatment). At the same time, the wafer is moved to the second polishing platform, and the wafer is again polished and polished with the same formula of the polishing excitation to remove the tungsten metal plug.

第6頁 455525 五、發明說明¢4) 的到痕。一如第一研磨平台，第二研磨平台也是使用硬式 i ί研磨墊，因此在每一晶圓CMP後也要進行硬式研磨墊再生處理。因此，即使硬式研磨墊的研磨速率較軟式研磨墊高，但整體產出量由於再生處理的過程而使研磨產出量降低。最後再進行第三道研磨處理，以研磨氧化層的研磨漿丨對氧化層研磨，使其稍低陷並露出鎢層。 i | 至於第二種方法，如IPEC公司所販售的機台，係全程的軟式研磨墊，請參考圖一 B，軟式研磨墊具有大的孔洞以吸附研磨漿，孔洞大小約為5 0 - 2 0 0# m。因此，孔洞不易堵塞，自然，研磨墊不用進行再生處理，因此可以使研Page 6 455525 V. Description of the invention ¢ 4). Just like the first polishing platform, the second polishing platform also uses hard-type polishing pads. Therefore, after each wafer CMP, a hard-type polishing pad regeneration process is also performed. Therefore, even if the polishing rate of the hard polishing pad is higher than that of the soft polishing pad, the overall output is reduced due to the regeneration process. Finally, a third grinding process is performed to polish the oxide layer with the polishing slurry of the oxide layer, so that the oxide layer is slightly depressed and the tungsten layer is exposed. i | As for the second method, such as the machine sold by IPEC, it is a soft polishing pad for the whole process. Please refer to Figure 1B. The soft polishing pad has large holes to absorb the polishing slurry. The hole size is about 50- 2 0 0 # m. Therefore, the holes are not easily clogged. Naturally, the polishing pad does not need to be regenerated.

I 1磨晶圓的產出量加大。不過軟式研磨墊卻要付出研磨墊壽命短少的代價。因為對晶圓研磨時，軟式研磨塾，同時也在消耗，特別是鎢層粗糙面的研磨，消耗更快。故一般而言，一個軟式研磨墊壽命僅約5 0 0片晶圓就得更換。由於第二道研磨也是使用軟式研磨墊，因此，也不需要再生處理。如同第一種方法，兩道研磨後都要再進行以研磨氧化層的研磨漿對氧化層研磨，使其稍低陷並露出鎢層的第三道研磨處理。The output of I 1 ground wafer is increased. However, soft abrasive pads come at the cost of short pad life. Because when grinding wafers, soft grinding is also consumed, especially the grinding of the rough surface of the tungsten layer, which consumes faster. So in general, a soft polishing pad only needs about 500 wafers to be replaced. Since the second polishing process also uses a soft polishing pad, no reprocessing is required. As in the first method, after the two grinding steps, a third grinding step is performed in which the oxide layer is polished with a polishing slurry for grinding the oxide layer, so that the oxide layer is slightly depressed and the tungsten layer is exposed.

I 上述的傳統方法如第一種，研磨墊的使用壽命較長，丨然而由於不管第一道或第二道研磨都要在晶圓傳送出去時先進行一次再生處理（conditioning)，所謂再生處理，係指以一帶有鑽石細顆粒的圓盤對研磨墊研磨，以使研磨墊I The traditional method mentioned above is the first one. The service life of the polishing pad is long. However, since the first or second polishing is performed, the wafer must be reconditioned once when the wafer is transferred out. , Refers to grinding the polishing pad with a disc with diamond fine particles, so that the polishing pad

第7頁 455525 五、發明說明（5)Page 7 455525 V. Description of the invention (5)

II

再生。然而，再生處理使得研磨中斷，對產出量就較不丨利。表格一示兩種研磨法之研磨塾壽命和效能之比較D 表格一第二道研磨墊約7 5 0片約1000片產出量 5 5片/小時 4 2片/小時研磨墊種類第一道研磨墊軟式研磨墊約3 0 0片硬式研磨墊約1 0 0 0片軟式研磨墊在第一研磨盤時壽命相較於硬式研磨墊而言，顯然低很多，第二道研磨片則壽命較長。但仍低於硬 |式研磨墊。不過軟式研磨墊則產出量較高，每小時可達55 1片，硬式研磨墊則雖然研磨墊壽命長，但產出量小很多 (僅4 2片左右）。硬式研磨墊的另一缺點是易造成以研磨墊 ,刮痕晶圓的問題。而軟式研磨墊，和晶圓的待研磨面接觸regeneration. However, the regeneration process interrupts the grinding, which is not good for the output. Table 1 shows the comparison of the grinding life and performance of the two polishing methods. D Table 1 The second polishing pad is about 750, about 1000 pieces, the output is 5 5 pieces / hour, 4 2 pieces / hour, and the type of polishing pad is the first. Abrasive pads Soft abrasive pads are about 300 pieces Hard abrasive pads are about 100 pieces. The life of the soft abrasive pads on the first abrasive disc is obviously lower than that of the hard abrasive pads. The second abrasive sheet has a longer life. long. But still below the hard | pad. However, the output of soft polishing pads is relatively high, up to 55 1 pieces per hour, while the output of hard polishing pads is much longer, but the output is much smaller (only about 42 pieces). Another disadvantage of the hard polishing pad is that it is easy to cause the problem of scratching the wafer with the polishing pad. The soft polishing pad is in contact with the surface to be polished of the wafer.

I i面大，並有可能因太軟而和晶圓研磨面產生一致性，而達丨不到平坦化的效果。 | I 有鑑於如上所述的問題，本發明將提供一解決上述問題的方法。發明目的及概述：本發明之一目的係提供鎢金屬化學/機械式研磨製丨程，以解決鎢插塞刮痕、產出量及研磨墊使用壽命等問 455525 五、發明說明（6) 本發明係一種改善鎢金屬化學/機械式研磨製程產出 i量及增加研磨墊使用壽命之方法，本發明係將晶圓載入以 I第一道硬式研磨墊，以移除粗糙面，再傳送至第二研磨墊 i上移除平滑面之其餘之鎢，並分別就研磨墊的不同，採用 I不同的研磨條件，例如第一道研磨時，注入的研磨毁、使 I用荷重都比其後一道研磨更多，更大。最後，再傳送至第 i三研磨墊上進行以磨氧化層的研磨漿研磨氧化層以使鎢插 |塞及/或導線高於周圍之氧化層。由於只需一次研磨墊再生處理，因此產出量比全部採用硬式研磨墊高，且因為對 !不同的研磨墊，使用不同的研磨條件。 i發明詳細說明：有鑑於傳統對鎢導線或插塞的化學/機械式研磨製程若不是在第一道粗磨及第二道細磨使用硬式研磨墊進行研磨，就是兩道研磨製程全以軟式研磨墊的方式研磨，而這，種方法，各有其優缺點。 1 因此，本發明將提供一種兼顧兩者優點之方法，不僅是產出量提高（比前述方法，且研磨墊使用壽命更長，發明人為改善傳統方法的問題，進行一序列的研究，結果如下：首先，發明人發現對鎢的研磨移除速率是一重要的關鍵，它將決定產出量、研磨墊的使用壽命、及研磨漿的使The I i surface is large and may be consistent with the polished surface of the wafer because it is too soft, and the planarization effect may not be achieved. In view of the problems described above, the present invention will provide a method to solve the problems. OBJECTS AND SUMMARY OF THE INVENTION: One object of the present invention is to provide a tungsten metal chemical / mechanical polishing process to solve the problems of tungsten plug scratches, output and polishing pad life. 455525 Description of the invention (6) The invention is a method for improving the output of tungsten metal chemical / mechanical polishing process and increasing the service life of the polishing pad. The present invention is to load the wafer with the first hard polishing pad to remove the rough surface and then transfer it. To the second polishing pad i, remove the remaining tungsten on the smooth surface, and use different polishing conditions for different polishing pads. For example, in the first polishing, the injected polishing is destroyed and the load for I is higher than that. The latter pass grinds more and larger. Finally, it is transferred to the third polishing pad for polishing the oxide layer with a polishing slurry for grinding the oxide layer so that the tungsten plug and / or the wire are higher than the surrounding oxide layer. Since only one polishing pad regeneration is required, the output is higher than that of all hard polishing pads, and because different polishing pads use different polishing conditions. i Detailed description of the invention: In view of the traditional chemical / mechanical polishing process for tungsten wires or plugs, if either the first rough grinding and the second fine grinding use hard polishing pads, or the two grinding processes are all soft The method of polishing pads, and this method, each has its advantages and disadvantages. 1 Therefore, the present invention will provide a method that combines the advantages of both, not only to increase the output (compared to the previous method, and the life of the polishing pad is longer, the inventor conducted a series of studies to improve the traditional method, the results are as follows : First, the inventors found that the grinding removal rate of tungsten is an important key, which will determine the output, the life of the polishing pad, and the use of the polishing slurry.

第9頁 45 55 25 ⑺ 此必須設計適當磨配方以產生最佳的研磨移除速考如圊 t 研磨移除速率 (移除量對時間）的示意顯示不管是使用軟式研磨墊對轉之移除率曲線式研磨墊之移除率曲線 10，都是非線性的，曲線均勻性的表現〇顯示 — 開始硬式研磨墊較佳，但則差不多 0 始前 2 0秒時間兩種研磨墊移除率是不相上下到了線性曲域 > 硬式研磨墊之移除率曲線1 0表現磨墊移除率曲線 2 0佳〇利用知描式電子顯微鏡可原來鎢的表面粗糙度相當 T% (如曲線圖下方研磨5 果），因此，一開始前2 0多秒移除量不顯著，直粗糙度移除至一相當程度後（例如曲線圖下方研的結果已相當平坦），才有較高的移除率（斜率較粗糙的表面必定對於軟式研磨墊有極大殺傷力，道軟式研磨墊研磨晶片，研磨移除速率衰退的情一道研磨塾要快很多。因第·一道研磨塾磨的是較面。第一道晶片研磨以軟式研磨墊進行，將降低壽命而已，而第二道晶片研磨墊，就沒有這一類 I五、發明說明 I用量。因率。請參圖。圖二丨2 0或者硬 ! 1 2及2 2為 I最後兩者 j I 一開 i的，雖然較軟式研以發現，丨秒後的結 ! j到表面的丨磨3 Q秒後丨大）。Page 9 45 55 25 ⑺ It is necessary to design an appropriate grinding formula to produce the best grinding removal speed test such as 圊 t. The diagram of the grinding removal rate (removal amount vs. time) shows whether the rotation is reversed using a soft polishing pad The removal rate curve 10 of the removal rate curve polishing pad is non-linear, and the performance of the curve uniformity shows that — it is better to start the hard polishing pad, but the removal rate of the two polishing pads is about 20 seconds before the beginning. It is comparable to the linear curve range> The removal rate curve of the hard polishing pad 1 0 represents the removal rate curve of the polishing pad 2 0 is good. Using the tracing electron microscope, the original surface roughness of tungsten is quite T% (such as the curve Grind 5 results below the graph). Therefore, the removal amount is not significant more than 20 seconds before the beginning, and the straight roughness is removed to a considerable degree (for example, the result of the research below the graph is quite flat). Removal rate (rougher surfaces must be softer The polishing pad has great lethality. The soft polishing pad grinds the wafer, and the polishing removal rate declines. The polishing pad is much faster. Because the first polishing pad is relatively flat. The first wafer polishing is performed with a soft polishing pad. , Will reduce the life only, and the second wafer polishing pad, there is no such I. V, the description of the amount of I. Because of the rate. Please refer to the figure. Figure 2 丨 2 0 or hard! 1 2 and 2 2 are the last two of I The person who j i opened i, although it is relatively soft to find out, the knot after 丨 seconds! J to the surface 丨 grind 3 Q seconds later (large).

I | |其次 i因此第一丨沉要比第平滑的表研磨墊之 |的問題。因此，綜合圖三之結果，本發明所提供之研磨方法係 4555 25 1五、發明說明（8) i在第一道研磨時採用硬式研磨墊，採用以下的條件例如研 |磨漿流量120-180 seem’ pH值控制於2-3’研磨墊及晶圓 ;播帶的角速度分別為113-1 15 RPMA 1 1卜1 1 5 RPM負荷大小 I約為5. 0 - 5 · 5碎。以便在第一研磨墊進行再生前，就將鎢丨的粗糙面（高低差大於60 0埃）完全去除。當晶圓粗糙面去除後，第一研磨墊進行再生處理，而 I晶圓此時移至第二道研磨墊進行研磨。第二道研磨墊係軟丨式研磨墊。此時研磨漿條件如下：研磨漿流量1 〇〇 _ 1 2 [} | s c c m ’ p Η值控制於2 - 3 ’研磨墊及晶圓攜帶的角速度分別 |為113-1151??“及111-115 1^1^，有效荷重為4.5-5_〇碎，以 I便有效去除細刮痕。表格二本發明和兩個前案之比較。研磨墊類型研磨墊壽命產出量 (每小時）再生處理 (pHp2) 硬墊+軟墊約1500片 52片僅pi (本發明）硬塾+硬塾約1 0 0 0片 42片 Pi及 P2 軟墊+軟墊小於1 0 0 0片 55片不需要 ; 顯示本發明之方法可使得較前案之研磨墊壽命長。不 I管是硬式研磨墊或者是軟式研磨墊都較長。這是因本發明 i在第一道研磨時’研磨條件不同於發明背景所述的第一道I | | Second i therefore the first 丨 Shen is smoother than the second table. Therefore, based on the results shown in Figure 3, the grinding method provided by the present invention is 4555 25. 15. Description of the invention (8) i The hard grinding pad is used in the first grinding, and the following conditions are used, for example, grinding | refining flow 120- 180 seem 'pH value is controlled at 2-3' polishing pad and wafer; the angular velocity of the tape is 113-1 15 RPMA 1 1 1 1 5 RPM load I is about 5.0-5 · 5 broken. In order to completely remove the rough surface (the height difference is greater than 60 angstroms) of tungsten before the first polishing pad is regenerated. After the rough surface of the wafer is removed, the first polishing pad is regenerated, and the I wafer is moved to the second polishing pad for polishing at this time. The second polishing pad is a soft 丨 type polishing pad. At this time, the polishing slurry conditions are as follows: slurry flow 1 〇〇_ 1 2 [} | sccm 'p Η value is controlled at 2-3' angular velocity carried by polishing pad and wafer respectively | are 113-1151 ?? "and 111- 115 1 ^ 1 ^, effective load is 4.5-5_〇 crushed, I can effectively remove fine scratches. Table 2 Comparison of the present invention and the two previous cases. Polishing pad type polishing pad life output (per hour) Regeneration treatment (pHp2) Hard pad + soft pad about 1500 pieces 52 pieces only pi (invention) Hard pad + hard pad about 1 0 0 0 pieces 42 pieces Pi and P2 soft pad + soft pad less than 1 0 0 0 pieces 55 pieces Not required; The method of the present invention is shown to make the polishing pad longer than the previous one. The tube is either a hard polishing pad or a soft polishing pad, which is longer. This is because the present invention i's polishing conditions during the first polishing Different from the first

第11頁 455525 !五、發明說明（9) 研磨墊，例如研磨漿的通量較大，因此研磨墊損傷較少。又由於在換上第二研磨墊時鎢層的粗糙面已完全去除，軟式研磨墊僅用以研磨平滑面，不會仍有粗縫面刮傷研磨墊，自然達到延長其使用壽命之目的。下如明說 ¾ 優之下以有具法方之明發本片十理四處寺 Θ h 匕 / /1 每活的再來塾原磨由研可次約一，了升做提少旦里因出，產片磨多研十 } 五 1- I C 至升提，式了軟升，提墊都磨命研。壽式墊用硬磨使一研的每式塾片軟磨ο 一 ο 研2每式出片軟超00 5 及至1 墊升至磨提升研命提式壽也硬塾分 }磨部 2 C研塾式磨硬研有。會題不問此的因傷 ’損墊成磨造研痕式刮軟有用則使墊係磨磨研研式道硬二之第統於傳由， }生 3 C 產痕刮限之以示用揭 tr CM 並明 ’發已本而離例脫施未實它佳其較凡之* ’ 明圍發範本利為專僅請述申所之上明以發本定請申之述下在含包應均飾修或變改效等之成。完内所圍下範神利精專第12頁 b ______- 丨圖式簡單說明 i I 本發明的較佳實施例將於往後之說明文字中輔以下列 [ I圖形做更詳細的闡述： iPage 11 455525! V. Description of the invention (9) The polishing pad, for example, has a large flux, so the polishing pad has less damage. Because the rough surface of the tungsten layer is completely removed when the second polishing pad is replaced, the soft polishing pad is only used to polish the smooth surface, and the rough pad surface will not scratch the polishing pad, which naturally achieves the purpose of extending its service life. The following Ruming said ¾ under the best is to have Ming Fa with the French method to send the film to ten temples and four temples Θ h dagger / / 1 come again every live 塾原磨 Yuken can be about one, the promotion is done to mention Shao Danli, Production of tablet grinding and more research ten} May 1-IC to lifting, soft lifting, lifting pads are grinding. Shou-type pad with a hard grinding to soften each type of cymbals. Ο ο 2 2 each type of soft out of 00 5 and up to 1 pad raised to grinding to improve the life of the shovel} also hard 塾 points} 磨部 2 C 研磨 type grinding hard research. If the question is not asked, the damage caused by the grinding pad is made into a grinded grinding mark. It is useful to make the pad grinded and grinded. The second rule is to pass the reason. Disclose tr CM and state that 'the hair has already been issued but the exception is not implemented. It is better and more extraordinary *' Ming Wai issued Fan Benli for the purpose of describing only the application of the application. The package should be decorated or modified. Fan Shenli Jingzhu, page 12b ______- 丨 a brief illustration of the diagram i I The preferred embodiment of the present invention will be supplemented by the following [I figure for more detailed explanation: i

I 圖一顯示掃描電子顯微鏡觀察硬式研磨墊（圖一 A)和丨軟式研磨墊之（圖一 B)孔洞區別。 ! 圖二顯示研磨初期移出率在初期（前2 0秒）並非線性的 i |曲線不管軟式或硬式研磨墊，而後段.（2 0秒）之後移除率才丨是線性的，曲線圖下方則顯示電子掃描電子顯微鏡觀察研I Figure 1 shows the difference between the holes of a hard polishing pad (Figure 1A) and a soft polishing pad (Figure 1B) observed by a scanning electron microscope. Figure 2 shows that the removal rate at the initial stage of grinding is non-linear in the early stage (first 20 seconds). The curve is regardless of the soft or hard polishing pad, and the latter stage. After 20 seconds, the removal rate is linear, below the curve. SEM observation research

I 丨磨5秒後（粗糙）和研磨30秒後（平滑）之表面顯像圖。I 丨 Surface image after grinding for 5 seconds (rough) and after grinding for 30 seconds (smooth).

I 第13頁I Page 13

Claims

45 55 25 六、申請專利範圍 |l. 一種改善鎢金屬化學/機械式研磨製程產出量及增加研 i磨墊使用壽命之方法，該方法至少包含以下步驟： I 將含鎢金屬層於上表面的晶圓載入第一研磨墊上，該第一研磨墊係硬式研磨墊，進行化學/機械式研磨製程，以移除粗鍵ti度（roughness amplitude)約60 0埃以上的鎢 I金屬移除；及 i | 轉換該晶圓至第二研磨墊上，該第二研磨墊係軟式研磨墊用以移除該其餘之鎢層至所設定之移除量為止。 |2·如申請專利範圍第1項之方法，更包含在該晶圓轉換至 i第二研磨墊時，對第一研磨墊進行再生處理。 j | 3.如申請專利範圍第1項之方法，其中上述之硬式研磨墊 j研磨時’至少包含採用以下的條件，研磨漿注入流量約丨120-180 seem，pH值控制於2-3，研磨墊及晶圓攜帶的角 i速度分別為113-115 RPM及111-115 RPM，負荷大小約為5. I 0 - 5. 5磅。 I |4.如申請專利範圍第1項之方法，其中上述之軟式研磨墊 |研磨時，至少包含採用以下的條件，研磨漿注入流量約 j 100-120 seem，pH值控制於2-3，研磨墊及晶圓攜帶的角 |速度分別為113-115 RPM及111-115 RPM，負荷大小約為4. I 5 - 5 . 0碎。45 55 25 VI. Scope of patent application | l. A method for improving the output of tungsten metal chemical / mechanical polishing process and increasing the service life of grinding pads, the method includes at least the following steps: I Put a tungsten-containing metal layer on top The wafer on the surface is loaded on a first polishing pad. The first polishing pad is a hard polishing pad and is subjected to a chemical / mechanical polishing process to remove tungsten I metal with a roughness amplitude of about 60 ° angstroms or more. Except; and i | transfer the wafer to a second polishing pad, which is a soft polishing pad used to remove the remaining tungsten layer to a set removal amount. | 2. The method according to item 1 of the patent application scope further includes performing a regeneration process on the first polishing pad when the wafer is transferred to the second polishing pad. j | 3. The method according to item 1 of the patent application range, wherein the above-mentioned hard polishing pad j during grinding includes at least the following conditions, the polishing slurry injection flow rate is about 120-180 seem, and the pH value is controlled at 2-3, The angular velocities carried by the polishing pad and wafer are 113-115 RPM and 111-115 RPM, respectively, and the load is about 5. I 0-5. 5 pounds. I | 4. The method according to item 1 of the scope of patent application, wherein the above-mentioned soft polishing pad | during grinding, at least include the following conditions, the injection flow of the polishing slurry is about j 100-120 seem, and the pH value is controlled at 2-3, The angular | velocity carried by the polishing pad and wafer are 113-115 RPM and 111-115 RPM, respectively, and the load is about 4. I 5-5.0.

第14頁 455525 六、申請專利範圍 ^~—— I 5·如申請專利範圍第1項之方法，其令上述之鎮金屬層係 |形成於内連線介電層上之導線及内連線介電層中之插塞。 I i 6.如申請專利範圍第5項之方法，更包含成第二研磨墊磨丨後的晶片轉至第三研磨墊，以對該晶圓進行該鎢金屬層下 i之内連線介電層進行部分移除，以使該屬於周圍 k内連線介電層。 7. —種改善晶圓上鎢金屬插塞之化學/機械式研磨製程產出量及增加研磨塾使用壽命之方法，該方法至少包含以下 |步驟： , 將含鶴金屬層於上表面的晶圓載入第—研磨塾上，該第一研磨墊係硬式研磨墊’其中研磨漿注入流量約 j 120-180 seem’ pH值控制於2-3，研磨墊及晶圓攜帶的角速度分別為1 1 3 - 11 5 RPM及1 11 - 1 1 5 rpm，進行化學/機械 |式研磨製程；及 I 轉換該晶圓至第二研磨墊上，該第二研磨墊係軟式研 |磨塾’其中研磨漿注入流量約0 0〜1 2 0 s c c m，P臉控制於 2-3,研磨墊及晶圓攜帶的角速度分別為113-U5 RPM及 111-115 RPM’用以移除該其餘之鎮層至所設定之移除量為止。 8 _如申請專利範圍第7項之方法’更包含在該晶圓轉換至第二研磨墊時，對第一研磨墊進行再生處理。Page 14 455525 6. Scope of patent application ^ ~ —— I 5 · If the method of the scope of patent application is the first item, it will make the above-mentioned town metal layer system | the wires and interconnects formed on the interconnect dielectric layer Plugs in the dielectric layer. I i 6. The method according to item 5 of the scope of patent application, further comprising transferring the wafer polished into a second polishing pad to a third polishing pad, so as to interconnect the wafer with the i under the tungsten metal layer. The electrical layer is partially removed so that it belongs to the surrounding k interconnect dielectric layer. 7. —A method for improving the output of the chemical / mechanical polishing process of tungsten metal plugs on the wafer and increasing the service life of the polishing pad, the method includes at least the following steps:, a crystal containing a crane metal layer on the upper surface The circle is loaded on the first polishing pad. The first polishing pad is a hard polishing pad 'wherein the polishing slurry injection flow rate is about 120-180 seem' The pH value is controlled at 2-3, and the angular velocity carried by the polishing pad and the wafer are 1 1 3-11 5 RPM and 1 11-1 1 5 rpm for chemical / mechanical | polishing process; and I transfer the wafer to a second polishing pad, which is a soft grinding | The slurry injection flow is about 0 0 ~ 1 2 0 sccm, the P face is controlled at 2-3, and the angular velocities carried by the polishing pad and wafer are 113-U5 RPM and 111-115 RPM, respectively, to remove the remaining town layers to Up to the set removal amount. 8 _ The method according to item 7 of the scope of patent application further includes performing a regeneration process on the first polishing pad when the wafer is transferred to the second polishing pad.

第15頁 455525 I六、申請專利範圍 ί 9.如申請專利範圍第7項之方法，其中上述之硬式研磨墊 I 研磨時負荷大小約為5 . 0 - 5 . 5碎。 j 1 0 .如申請專利範圍第7項之方法，其中上述之硬式研磨 I墊研磨至少將粗糙幅度（r 〇 u g h n e s s a m p 1 i t u d e )約6 0 0埃以上的鎢金屬移除後才轉移至軟式研磨墊。 | i 11.如申請專利範圍第7項之方法，其中上述之軟式研磨 |墊研磨時負荷大小約為4. 5 - 5 . 0碎。Page 15 455525 I. Application scope of patent ί 9. The method according to item 7 of the scope of patent application, in which the above-mentioned hard polishing pad I is about 5.0 to 5-5 pieces when grinding. j 1 0. The method according to item 7 of the scope of patent application, wherein the above-mentioned hard grinding I pad grinding removes at least about 60 angstroms of tungsten (r ughnessamp 1 amplitude) before transferring to soft grinding pad. i 11. The method according to item 7 of the scope of patent application, wherein the above-mentioned soft grinding | loading of the pad is about 4.5 to 5.0 pieces.

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