TW446829B - Image formation position adjusting device, exposure system, image formation adjusting method and exposure method - Google Patents

Image formation position adjusting device, exposure system, image formation adjusting method and exposure method Download PDF

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Publication number
TW446829B
TW446829B TW088115899A TW88115899A TW446829B TW 446829 B TW446829 B TW 446829B TW 088115899 A TW088115899 A TW 088115899A TW 88115899 A TW88115899 A TW 88115899A TW 446829 B TW446829 B TW 446829B
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Taiwan
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patent application
optical element
item
optical
optical system
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TW088115899A
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Chinese (zh)
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Hiroshi Shirasu
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Nippon Kogaku Kk
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0875—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more refracting elements
    • G02B26/0883—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more refracting elements the refracting element being a prism
    • G02B26/0891—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more refracting elements the refracting element being a prism forming an optical wedge
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The purpose of the present invention is to adjust the image formation position of the projection optical system by continuous variation with high accuracy. The first and second optical members 32, 33 consisting of wedge-shaped sheets of glass and having tilted surfaces 32b, 33a are disposed facing each other, wherein a positive pressure groove 33c supplied with a compressed air from a positive pressure source P and a negative pressure groove 33d vacuum-sucked by a negative pressure source V are provided in the tilted surface 32b of the first optical member 32 to form an air bearing with the first and second optical members 32, 33 facing each other in non-contact condition, and a relative clearance (sheet thickness) between a plane 32a of light incidence and a plane 33b of outgoing light can be changed and adjusted by actuating an actuator 35 against an urging force of a coil spring 36 to relatively move the first optical member 32 with respect to the second optical member 33. By installing this image formation position adjusting device 31 on the optical axis of the projection optical system, the image formation position can be arbitrarily adjusted.

Description

·' A46 82 9· A46 82 9

發明所屬技術領域 液晶顯示裝置或電漿顯示裝置等微^ 曝光裝置之成像位置調整裝置、具 之曝光裝置、成像位置調整方法及 本發明係有關於在 電子裝置之製造使用之 備該成像位置調整裝置 曝光方法。 習知技術 接為了 乂南產量製造比較大型之液晶顯示面板等，使用 田型投影曝光裝置^該掃描型投影曝光裝置係 J細椒照明區域照明光單，*和該照明區域之= 向正交之方ϊ^ι播；h+出s ΡΠ止 描先罩，對於和照明區域共輛之曝光區域 I ’掃描塗抹了光阻劑之感光基板（玻璃板等），將光罩上 圓案等倍或縮小投影後逐次曝光於感光基板上之裝置。 又影光學系和該複數照明區域之各區域對應設置。 在此，因光罩之表面（圖案面）和感光基板之表面（曝 t面）最好在曝光時設成對於投影光學系共扼之位置，光 及感光基板各自利用水平調整裝置變更控制其姿勢。水 w調整裝置在構造上具備在沿著投影光學系之光軸之方向 :移之複數致動器等’㈣令各致動器適當的動作，將光 罩或感光基板向沿著該光軸之方向㈣，而且繞和該光軸 正交之面内之正交2軸轉動。 持 有 可疋，在光罩及感光基板之表面因本身之平坦度或保 狀態所引起之撓曲等而存在凹凸D因此，在局部上看， 光罩及感光基板對於投影光學系不成共軛之情況。TECHNICAL FIELD The present invention relates to an imaging position adjustment device, an exposure device, an imaging position adjustment method, and the like for a micro ^ exposure device such as a liquid crystal display device or a plasma display device, and the present invention relates to preparing the imaging position adjustment for use in the manufacture of electronic devices. Device exposure method. The conventional technology is used to manufacture relatively large-scale liquid crystal display panels, etc. for the production of Tongnan. A field-type projection exposure device is used. The scanning projection exposure device is a J light pepper illumination area illumination light sheet, and * and the illumination area = orthogonal. Ϊ ^ 播 播; h + 出 s ΡΠstop the cover first, and for the exposure area I 'shared with the lighting area, scan the photosensitive substrate (glass plate, etc.) coated with the photoresist, and put the mask on the circle equal times. Or reduce the device that is successively exposed on the photosensitive substrate after projection. The shadow optical system is provided corresponding to each of the plurality of illuminated areas. Here, since the surface (pattern surface) of the photomask and the surface (exposed surface) of the photosensitive substrate are preferably set to positions conjugate to the projection optical system during exposure, the light and the photosensitive substrate are controlled by the level adjustment device. posture. The water w adjustment device is structurally provided in a direction along the optical axis of the projection optical system: a plurality of actuators, etc., to move the actuators appropriately and move the photomask or photosensitive substrate along the optical axis. The direction is ㈣, and rotates about two orthogonal axes in a plane orthogonal to the optical axis. Yes, there are irregularities on the surface of the mask and the photosensitive substrate due to its flatness or deflection caused by the state of maintenance. Therefore, in a local view, the mask and the photosensitive substrate are not conjugated to the projection optical system. Situation.

系之成像位置（成像面）和感Department of imaging position (imaging surface) and sense

446829 五、發明說明（2) 光基板之表 水平調整裝 佳。 可是， 佳，在感光 雖變小，但 精度化、高 者用以保持 因而發生製 方法。 在此， 平行平面板 設置適當的 系之各自之 可是， 變更各投影 平行平面板 度’而且長 發明之概要 因而， 調整投影光 成像位置調 方法，在抑 南精度化、 面之沿者光軸之方向之距離（焦點誤差） 置控制感光基板等之姿勢，調整成平均上最用 :用水平調整裝置之姿勢控制調整 基板上和各投影先m應之位置m = 是仍殘留，有限制所製造之微之、 =身…藉著光罩或感=二 之工作口寺本“精度化，減輕該 造工時增加、價格上升等問題，希望別的解： 因投影光學系之成像位置藉著在其光 可按照其板厚調整’藉著在各投影光學系Κ446829 V. Description of the invention (2) The surface of the light substrate is well adjusted. However, it is good. Although the light sensitivity is reduced, the precision and the higher are used to maintain the resulting method. Here, each of the parallel plane plates is provided with an appropriate system. However, the degree of each projection parallel plane plane is changed. Moreover, the outline of the invention is long. Therefore, the method of adjusting the projection light imaging position adjustment method is to improve the accuracy of the south direction and the optical axis of the plane. The distance in the direction (focus error) is used to control the posture of the photosensitive substrate, and it is adjusted to be the most useful on average: Use the attitude control of the level adjustment device to adjust the position on the substrate and each projection first. M = Yes, it remains, there are restrictions. The smallest of manufacturing, the body ... by the mask or the sense = the work of Teramoto "precision, reducing the increase in man-hours and the price rise, etc., I hope other solutions: because the imaging position of the projection optics is In its light can be adjusted according to its thickness.

調整了廷種板厚之平行平面板，令各投影光學 像成像於感光基板之表面D 因感光基板或光罩之凹凸不—樣，需要可連續 光學系之成像位置之調整’即可連續變更調整 之板厚，而且該板厚之變更調磐需要可極高精 期穩定的進行。 本發明之目的在於提供能以高精度連續的變更 學系之成像位置之成像位置調整裳置、具備今 整裝置之曝光裝置'成像位置調整方法及曝光 制價格等之上升下’達成所製造微電子裝置之 高密集化。The parallel plane plate with the plate thickness adjusted, so that each projection optical image is imaged on the surface of the photosensitive substrate. Due to the unevenness of the photosensitive substrate or the photomask, the imaging position of the continuous optical system needs to be adjusted to continuously change. The thickness of the plate to be adjusted and the plate thickness change need to be stable with extremely high precision. The purpose of the present invention is to provide an imaging device capable of continuously changing the imaging position of a faculty with high accuracy and adjusting the position of the imaging device, and an exposure device provided with the present device, the method of "improving the imaging position and increasing the price of the exposure system," etc. High density of electronic devices.

第5頁 446829 五、發明說明（3) 若依據本發明之第1觀點，提供一種成像位置調整裝 置’係調整光學系之成像位置之成像位置調整裝置，包 括：第1及第2光學元件，具有相向之傾斜面並透射既定波 長之光；非接觸裝置，以非接觸令該相向之傾斜面相向； 以及移動裝置，沿著和該光學系之光轴交叉之方向令該第 1光學元件及第2光學元件相對移動。 若利用本發明之成像位置調整裝置，利用移動裝置令 具有相向之傾斜面·之第1及第2光學元件相對移動，使得可 變更調整該第1及第2光學元件之整體上之板厚。因此，藉 著在投影光學系之光軸上設置該成像位置調整裝置，可任 意變更調整該投影光學系之成像位置。 在此’未特別定，在該非接觸裝置上可採用非接觸型 軸承’例如包括氣體軸承的。藉著採用這種氣體轴承等之 非接觸裝置，第1及第2光學元件可彼此不接觸的微調成相 對位置’伴隨相對位置之變更調整之隨時間之劣化3、，可 高精度且穩定調整成像位置。 若依據本發明之第2觀點，提供一種曝光褒置，係利 用投影光學系將圖案曝光於基板之曝光裝置，包括： 及第2光學元件，配設於投影光學系内而且具有相向之傾 斜面並透射既定波長之光；以及移動裝置，沿著和該投影 光學系之光軸交叉之方向令該第1光學元件及第2光學元件 相對移動。 若利用該曝光裝置’因具備該成像位置調整褒置，可 任意變更調整該投影光學系之成像位置，在曝光胃K &Page 5 446829 V. Description of the invention (3) According to the first aspect of the present invention, an imaging position adjustment device for adjusting an imaging position of an optical system is provided, including: first and second optical elements, Having an opposite inclined surface and transmitting light of a predetermined wavelength; a non-contact device that makes the opposite inclined surface face each other in a non-contact manner; and a moving device that makes the first optical element and the optical axis along a direction crossing the optical axis of the optical system and The second optical element moves relatively. If the imaging position adjusting device of the present invention is used, the first and second optical elements having opposite inclined surfaces · are moved relative to each other using a moving device, so that the overall thickness of the first and second optical elements can be adjusted. Therefore, by setting the imaging position adjustment device on the optical axis of the projection optical system, the imaging position of the projection optical system can be arbitrarily changed and adjusted. Here, 'not specifically defined, a non-contact bearing can be used for this non-contact device', for example, including a gas bearing. By adopting such a non-contact device such as a gas bearing, the first and second optical elements can be fine-tuned to a relative position without contact with each other. 'Deterioration over time with adjustment and adjustment of the relative position 3, can be adjusted with high accuracy and stability. Imaging position. According to a second aspect of the present invention, there is provided an exposure device that uses a projection optical system to expose a pattern on a substrate. The exposure device includes: and a second optical element, which is arranged in the projection optical system and has opposite inclined surfaces. And transmitting light of a predetermined wavelength; and a moving device that relatively moves the first optical element and the second optical element in a direction crossing the optical axis of the projection optical system. If the exposure device ’is equipped with the imaging position adjustment device, the imaging position of the projection optical system can be arbitrarily changed and adjusted, and the exposure stomach K &

第6頁 446829 五、發明說明（4) 板等之表面有凹凸之情況s 面，可製造高精度化、高密$可確實的成像於基板之表 若依據本發明之C化之微電/裝置。 法’係調整光學系之成像仅置之成像位置調整方广包 括：將具有相向之傾斜面並透射既定波長之光之扪及第? 光學元件配設於該光學系之步驟；以及以非接觸令該第i 光學元件及該苐2光學元件沿著該傾斜面移動之步驟。 若依據本發明之第4觀點，提供一種曝光方法，係利 用投影光學系將圖案曝光於基板之曝光方法，包括：將具 有相向之傾斜面並透射既定波長之光之第1及第2光學元件 配設於該投影光學系内之步驟；以及令該第1光學元件及 該第2光學元件沿著和投影光學系之光軸交叉之方向移動 之步鄉。 圖式簡單說明 圖1係表示本發明之實施例之掃描型之投影曝光裝置 之主要部分之構造圖。 圖2係表示本發明之實施例之感光基板和視野區域之 關係之圖。 圖3係表示本發明之實施例之投影光學系之構造圖。 圖4係表示本發明之實施例之成像位置調整裝置之構 造之側視圖。 圖5係表示本發明之實施例之成像位置調整裝置之第1 光學構件之底視圖。 圖6係表示本發明之實施例之處理之概要圖。Page 6 446829 V. Description of the invention (4) The surface of the board and the like has unevenness, and the surface can be manufactured with high precision and high density. The surface of the substrate can be reliably imaged. . The method is to adjust the imaging position of the optical system. The adjustment of the imaging position includes: the step of arranging an optical element with an inclined surface facing each other and transmitting light of a predetermined wavelength to the optical system; and non-contact A step of moving the i-th optical element and the second optical element along the inclined surface. According to a fourth aspect of the present invention, an exposure method is provided, which is an exposure method for exposing a pattern on a substrate by using a projection optical system, including: first and second optical elements having opposite inclined surfaces and transmitting light of a predetermined wavelength; A step of disposing in the projection optical system; and a step of moving the first optical element and the second optical element in a direction crossing the optical axis of the projection optical system. Brief Description of the Drawings Fig. 1 is a structural diagram showing a main part of a scanning type projection exposure apparatus according to an embodiment of the present invention. Fig. 2 is a diagram showing a relationship between a photosensitive substrate and a field of view in an embodiment of the present invention. Fig. 3 is a structural diagram showing a projection optical system according to an embodiment of the present invention. Fig. 4 is a side view showing the construction of an imaging position adjusting device according to an embodiment of the present invention. FIG. 5 is a bottom view of the first optical member of the imaging position adjusting device according to the embodiment of the present invention. Fig. 6 is a schematic diagram showing processing of an embodiment of the present invention.

446 82 9 五、發明說明（5) 圖7 b : η: ί ί n實施例之水平控制之狀況之圖及 圖。 舍月之貫細例之成像位置調整控制之狀況之 發明之最佳實施形態 坪細說明本發明’依照附加之圖面說明。 之主ί邱八之發明之實施例之掃描型之投影曝光裝置 Α板和；圖，圖2係表示本發明之實施例之感光 暴扳和視野區域之關係之圖。 在圓1，11係形成了應轉印圖案之光罩，；} 2係塗抹 感光材料（光阻劑）之玻璃板等感光基板。這些光罩U及威 光基板1 2配置成隔著多套投影光學系〗3( 'ε 套U目向在此，將沿著和光π及感光基板12大致H 之投影，學系13之光軸之方向設為ζ方向（Ζ軸），在和該ζ 方向正交之面内之在圖}和紙面平行之方向設為X方向α 轴）’在和ζ方向及X方向正交之面内之在圖1和紙面垂直之 方向設為Υ方向（γ轴）。 在光罩11之投影光學系1 3之反側配置照明光學系1 $。 在照明光學系1 4，雖省略圖示，自由超高光銀燈等構成之 複數光源所射出之照明光利用光導等一度集中後均勾分 配、射出。來自該光導之射出光利用複眼積分器變換為具 有均勻之照度分布之光束’利用具有細縫形狀（矩形）之開 口之遮簾整形成細缝狀。通過了該遮簾之光束射入聚光透 鏡’聚光透鏡藉著該束成像於光草1 i上，在複數細縫狀之 照明區域照明光罩1 ] <： 1 5係在光罩11和照明光學系14之光446 82 9 V. Description of the invention (5) Fig. 7b: η: ί n Figures and diagrams of the status of the horizontal control in the embodiment. The best embodiment of the invention of the situation of the image position adjustment control in the detailed example of the month and month The detailed description of the present invention is based on the attached drawings. The main embodiment of the invention is a scanning projection exposure apparatus A plate of the embodiment of the invention of Qiu Ba, and FIG. 2 is a diagram showing the relationship between the photosensitive exposure and the field of view of the embodiment of the present invention. In circles 1,11, a photomask to be transferred is formed;} 2 is a photosensitive substrate such as a glass plate coated with a photosensitive material (photoresist). These reticle U and Weiguang substrate 12 are arranged to interpose a plurality of sets of projection optical systems. 3 ('ε sets of U are oriented here, will be along the projection of approximately H and π and photosensitive substrate 12, the optical axis of Department 13 The direction is set to the ζ direction (Z axis), and the plane parallel to the ζ direction is shown in the figure} The direction parallel to the paper surface is set to the X direction α axis) 'in the plane orthogonal to the ζ direction and the X direction The direction perpendicular to the paper surface in FIG. 1 is set to the Υ direction (γ axis). An illumination optical system 1 $ is disposed on the opposite side of the projection optical system 13 of the mask 11. In the illumination optics system 14, although the illustration is omitted, the illumination light emitted by a plurality of light sources composed of a free ultra-high-light silver lamp is once concentrated and emitted by a light guide or the like. The emitted light from this light guide is converted into a light beam having a uniform illuminance distribution by a compound eye integrator 'and formed into a slit shape by a curtain having a slit shape (rectangular) opening. The light beam that has passed through the curtain enters the condenser lens. The condenser lens forms an image on the light grass 1 i through the beam, and illuminates the photomask 1 in a plurality of slit-shaped illumination areas.] ≪: 1 5 is on the photomask Light of 11 and illumination optics 14

第8頁Page 8

A46 82 9 發明說明（6) 射出部之間配置成自由進退之 上所形成之對準用記號（圖上顯微鏡，偵測在光罩U 應位置成之對準用記號i2a〜l2 I)和在感光基板12上之對 光罩Π被吸住保持於圖上 位置。 基板1 2被吸住保持於基板工二之光罩工作台，而感光 板工作台16安裝成和形成為截:1』。這些光罩工作台及基 之掃描工作台(圖上未示)彼以[字形…向移動 m在基二:乍台;=在2方向位移之3個線性致動器 1 7 (在圖1只表不2個）裝在該槁>，， 面藉著這些線性致動器i 7涯擇^ 。感光基板1 2之表 位移而且進行《軸為中：之擇旋^體上動作，向Z方向 旋轉（州調整水平 之㈣（川及以γ轴為中心之 掃描一作D (基板工作台）藉著依照上 置(曝光控制裝置)之控制驅動，可在掃描方向之X方Λ 復移動。感光基板12之位置利用設於基板工作台16之雷射 干涉計等複數位置感測器19量測，光罩"之位置也一樣利 用設於光罩工作台之雷射干涉計等複數位置感測器（圖上 未示）量測。 在掃描工作台靜止之狀態，投影於感光基板丨2上的係 細縫狀之圖案像，係在光罩丨丨上形成之光罩圖案之一部分（ 之成像，但是藉著將保持光罩i〗之光罩工作台和保持感光 基板1 2之基板工作台丨6保持成一體之掃描工作台相對於光 罩1 1上之照明區域及投影光學系丨3移動掃描，使得在光罩 11上所形成之光罩圖案全部轉印於感光基板ι2上。 446 82 9 五 '發明說明（7) 在本實施例，在投影光學系1 3上使等倍率正立實像t·7 系之光學系。照明光利用配置於照明光學系1 4 t之遮簾之 開口整形’在各自包括感光基板12上之梯形之視野區域 I 8a〜Ue (參照圖2 )之複數矩形（細縫形）之照明區域（圖上 未示）照明光罩11。 圖3表示投影光學系1 3之構造，投影光學系1 3具有全 部圖3之構造。本投影光學系13具有由2組戴生（Dyson)型 光學系組合而成之構造，第i部分光學系13a( 21〜24)及第2 部分光學系13b(26〜29)等構成。 第1部分光學系13a包括面向光罩11並具有以45。之傾 斜角配置之反射面之直角稜鏡2 1、具有沿著光罩π之面内 方向之光軸且凸面朝向直角稜鏡21之反側之平凸透鏡成分 22、整體上係彎月形狀且具有凹面朝向平凸透鏡成分22側 之反射面之透鏡成分23以及和直角棱鏡21之反射面正交且 具有相對於光罩11面以45。之傾斜角配置之反射面之直角 鐘鏡2 4。 來自經由光罩1 1之照明光學系1 4之照明光，利用直角 稜鏡21將光路偏向90。後，射入和直角稜鏡21接合之平凸 透鏡成分22。在該平凸透鏡成分22，接合用和平凸透鏡成 为22不同之玻璃材料構成之透鏡成分23，來自直角棱鏡2i 之光在透鏡成分22、23之接合面22a折射，到達蒸鍍了反 | 射膜之反射面23a。反射面23a所反射之光在接合面22&折 | 射’到達和透鏡成分22接合之直角稜鏡24。來自透鏡成分I 22之光利用直角稜鏡24將光路偏向90 °後，在該直角棱鏡 |A46 82 9 Description of the invention (6) Alignment marks (i.e., alignment marks i2a ~ l2 I formed on the photomicrograph to detect the position of the photomask U) are arranged between the ejection sections so that they can move forward and backward freely. The pair of photomasks Π on the substrate 12 is sucked and held in the position shown in the figure. The substrate 12 is sucked and held on a mask table of the substrate worker 2, and the photosensitive plate table 16 is installed and formed into a cross section: 1 ″. These reticle worktables and the base scanning worktables (not shown in the figure) are moved in the shape of [letter ... direction m in base two: Zhatai; = three linear actuators displaced in 2 directions 1 7 (in Fig. 1 Only 2 are shown) are installed in the 槁 >, by these linear actuators i 涯 择 ^. The surface of the photosensitive substrate 12 is shifted and the axis is in the middle: the rotary motion of the body is rotated in the Z direction (the state adjusts the horizontal axis (Sichuan and the scan centered on the γ axis as a D (substrate table)) It can be moved in the X direction of the scanning direction in accordance with the control drive of the upper (exposure control device). The position of the photosensitive substrate 12 is measured by a plurality of position sensors 19 such as a laser interferometer provided on the substrate table 16. The position of the photomask is also measured using a plurality of position sensors (not shown) such as a laser interferometer provided on the photomask table. When the scanning table is stationary, it is projected on the photosensitive substrate 丨 2 The slit-like pattern image above is a part of the mask pattern formed on the mask 丨 (imaged, but by the mask table that will hold the mask i and the substrate that holds the photosensitive substrate 12 The worktable 丨 6 is kept in one scanning table relative to the illumination area on the reticle 11 and the projection optical system 丨 3 moves and scans, so that all the reticle patterns formed on the reticle 11 are transferred to the photosensitive substrate ι2 446 82 9 Five 'invention description (7) In this embodiment, the optical system of the equal magnification erect image t · 7 system is made on the projection optical system 13. The illumination light is shaped using the openings of the blinds arranged on the illumination optical system 1 4 t on each of the light-sensitive substrates 12. The trapezoidal field-of-view area I 8a to Ue (see FIG. 2), a plurality of rectangular (slit-shaped) illumination areas (not shown) illuminate the photomask 11. FIG. 3 shows the structure of the projection optical system 13 and the projection optical system. 1 3 has all the structures of Fig. 3. The projection optical system 13 has a structure composed of two sets of Dyson type optical systems, a part i optical system 13a (21 ~ 24) and a part optical system 13b. (26 ~ 29), etc. The first part of the optical system 13a includes a right angle 稜鏡 2 that faces the mask 11 and has a reflecting surface arranged at an inclination angle of 45 °. 1. It has light in a direction along the plane of the mask π. A plano-convex lens component 22 having an axis and a convex surface facing the right side of the right angle 稜鏡 21, a lens component 23 having a meniscus shape as a whole and a reflective surface having a concave surface facing the plano-convex lens component 22 side, and a reflection surface orthogonal to the right-angle prism 21 and It has a reflection arranged at an oblique angle of 45 ° with respect to the 11 face of the mask The right-angle clock mirror 2 4. The illumination light from the illumination optical system 14 through the mask 11 is used to deflection the optical path to 90 using the right angle 稜鏡 21. Then, it enters the plano-convex lens component 22 joined to the right angle 稜鏡 21. This plano-convex lens component 22 is a lens component 23 composed of different glass materials for the plano-convex lens and the plano-convex lens. The light from the right-angle prism 2i is refracted on the joint surface 22a of the lens components 22 and 23 and reaches the reflection of the vapor-deposited reflective film. Surface 23a. The light reflected by the reflective surface 23a is folded at the joint surface 22 & the beam reaches the right angle 稜鏡 24 which is joined to the lens component 22. The light from the lens component I 22 is deflected by 90 ° by the right angle 稜鏡 24, The right-angle prism |

第丨0頁 446 82 9 五、發明說明（8) 24之射出面側形成1次成像。 # a _人成像之光經由第2部分光學系i3b(26〜29)在感 與i «之A表面上形成光罩11之2次成像。因該第2部分光 :Λ 造和第1部分光學系i3a一樣，省略詳細說 嗜、、ΐ 學系13(第1及第2部分光學系i3a、i3b)係兩側 二二二I二。在第1部分光學系13a形成之1次成像之位置 配置視域光闌（圖上未示）c 1視域光闇具有梯形之開口部，利用該視域光闌感光 二I i it之曝光區域規定為梯形。即’如圖2所示，投影 '、具有利用投影光學系内之視域光闌規定之視野區 之這些視野區域18a〜18e之成像在感光基板12上 光區域上以等倍率之正立像（上下左右方向之橫向倍 為正之像）形成a在此，投影光學系丨3之一部分設置成 ^野區域18a〜18(；沿著圖中γ方向排列。又，投影光學系13 另外一部分設置成在圖中X方向和視野區域l8a~i8c不同 位置之視野區域1 、1 8e沿著Y方向排列。 各視野區域18a〜18e配置成視野區域18a〜18c之上邊 對平行邊之中之短邊）和視野區域18d、之上邊相 向。此時’梯形之視野區域18a〜18e配置成沿著X方向即掃 描工作台之移動方向之視野區域i 8a〜丨8e之寬之總和在任 一 Y方向之位置都變成定值。這是為了在掃描工作台邊在χ 方向移動邊曝光感光基板12之大的曝光區域時，在感光基 板1 2之曝光區域全面可得到均勻之曝光量分布3 因感光基板12上之曝光區域18a〜18c和曝光區域I8d、Page 丨 0 446 82 9 V. Description of the invention (8) One image is formed on the exit side of 24. # a _The light of human imaging is formed by the second part of the optical system i3b (26 ~ 29) to form a photomask 11 on the surface of the sensor i «. Because the second part of the light: Λ is the same as the optical system i3a of the first part, and the detailed description is omitted. The two sides of the faculty of Psychology 13 (the first and second optical systems i3a, i3b) are two two two two two. A field of view diaphragm (not shown) is arranged at the position of the first imaging formed by the optical system 13a in the first part. C 1 The field of view has a trapezoidal opening. The field of view diaphragm is used to expose two I i it exposures. The area is defined as a trapezoid. That is, 'as shown in FIG. 2,' the imaging of these field of view areas 18 a to 18 e having the field of view defined by the field of view stop in the projection optical system is an orthophoto of the light area on the photosensitive substrate 12 at equal magnification ( The horizontal magnification in the up, down, left, and right directions is a positive image). Here, a part of the projection optical system 3 is arranged as a field region 18a to 18 (; arranged along the γ direction in the figure. Another part of the projection optical system 13 is arranged as In the figure, the visual field regions 1 and 18e at different positions in the X direction and the visual field regions 18a to i8c are arranged along the Y direction. Each visual field region 18a to 18e is arranged as the short side of the parallel sides above the visual field regions 18a to 18c.) It faces the field of view 18d and the upper side. At this time, the trapezoidal field of view areas 18a to 18e are arranged so that the sum of the widths of the field of view areas i 8a to 8e along the X direction, that is, the moving direction of the scanning table, becomes a constant value at any position in the Y direction. This is because when the scanning table is moved in the χ direction while exposing the large exposure area of the photosensitive substrate 12, a uniform exposure distribution can be obtained in the entire exposed area of the photosensitive substrate 12 due to the exposed area 18a on the photosensitive substrate 12. ~ 18c and exposed area I8d,

IH • A46 82 9 五、發明說明（9) 18e設成在X方向分開，在γ方向伸長之圖案變成首先利用 在空間上分開之分散之曝光區滅l8a~18c曝光後隔了一段 0τΓ間用填其中間之曝光區域1 8d、1 8e曝光之在時間上及空 間上分割後曝光。 在投影光學系1 3之第1及第2部分光學系1 3a、1 3b之間 之光路（光軸）上將用以調整該投影光學系13之成像位置之 成像位置調整裝置31配置成和各投影光學系1 3之各光學系 對應。成像位置調整裝置31之細部構造如圖4及圖5所示。 成像位置調整裝置31包括第1光學元件32、第2光學元 件33以及令第1光學元件32滑動之移動裝置。移動裝置由 第1光學元件32導引成自由滑動之複數導輥34、使第1光學 元件32滑動位移之線性致動器35、將第1光學元件32向線 性致動器35側偏壓之線圈彈簧36以及偵測第1光學元件32 之位置之位置偵測感測器3 7等構成。 在本實施例’第1光學元件32利用複數導輥34導引成 可沿著X方向（或Y方向）移動，第2光學元件33固定於圖外 之機架等。但’在構造上將第1光學元件32固定而移動第2 光學元件33或者使得第1及第2光學元件32、33雙方都可移 動也可。 第1光學元件32及第2光學元件33係各自形成為透射既 定波長之光（包括照明光之波長之既定頻帶之光）之換形= 玻璃板。即，第1光學元件32具有作為光入射面之第j入射 面3 2a和與該第1入射面32a斜交之作為光射出面之第j射出 面32b。又，第2光學元件33具有沿著第1光學元件32之、第工IH • A46 82 9 V. Description of the invention (9) 18e is set to be separated in the X direction, and the pattern elongated in the γ direction becomes the first to use the spatially separated and scattered exposure area to extinguish 18a ~ 18c after exposure with a period of 0τΓ. Fill in the middle exposure areas 18d, 18e, and expose them after dividing them in time and space. An imaging position adjustment device 31 for adjusting the imaging position of the projection optical system 13 is arranged on the optical path (optical axis) between the first and second part optical systems 1 3a, 1 3b of the projection optical system 13 and Each optical system of each projection optical system 1 3 corresponds. The detailed structure of the imaging position adjusting device 31 is shown in FIGS. 4 and 5. The imaging position adjusting device 31 includes a first optical element 32, a second optical element 33, and a moving device that slides the first optical element 32. The moving device is guided by the first optical element 32 into a plurality of freely sliding guide rollers 34, a linear actuator 35 for slidingly displacing the first optical element 32, and a linear actuator 35 for biasing the first optical element 32 toward the linear actuator 35 side. The coil spring 36 and a position detection sensor 37 for detecting the position of the first optical element 32 are configured. In this embodiment ', the first optical element 32 is guided by a plurality of guide rollers 34 so as to be movable in the X direction (or Y direction), and the second optical element 33 is fixed to a frame or the like not shown in the figure. However, the first optical element 32 is fixed in structure and the second optical element 33 is moved or both the first and second optical elements 32 and 33 can be moved. The first optical element 32 and the second optical element 33 are each formed to transmit light of a predetermined wavelength (including light of a predetermined frequency band including the wavelength of the illumination light). = Glass plate. That is, the first optical element 32 has a j-th incident surface 32a as a light incident surface and a j-th emission surface 32b as a light exit surface which is oblique to the first incident surface 32a. In addition, the second optical element 33 has a first working element along the first optical element 32.

五、發明說明（ίο) 射出面32b相向之作為光入射面之第2入射面33a和與第1光 學元件32之第1入射面3 2a大致平行之作為光射出面之第2 射出面33b。 在第1光學元件32之第1射出面32b形成複數正壓槽32c 及複數負壓槽3 2 d。在本實施例，在兩端部附近之2處配置 隔著正壓槽32c之兩侧各自配置了負壓槽32d的。 這些正壓槽32c及負壓槽32d係用以在將第1光學元件 32之第1射出面32b和第2光學元件33之第2入射面33a彼此 保持固定間隔下構成令以非接觸相向之作為非接觸裝置之 空氣軸承之槽◊即，正壓槽3 2c各自經由通孔和圖外之正 壓供給源（壓縮空氣供給裝置）P連通，藉著正壓供給源p動 作供給正壓槽32c壓縮空氣，將第1光學元件32向令相對於 第2光學元件33離開（浮起）之方向偏壓。而，負壓槽32d各 自經由通孔和圖外之負壓供給源（抽真空裝置）v連通，藉 著負壓供給源V動作抽負壓槽3 2d内之空氣，將第1光學元 件32向令接近（接觸）第2光學元件33之方向偏壓。 藉著適當的調整控制正壓供給源p和負壓供給源V，將 利用正壓槽32c之斥力和利用負壓槽32d之吸力保持於既定 值’第1光學元件32之第1射出面32b和第2光學元件33之第 2入射面3 3 a在保持固定間隙g之狀態下相向。在本實施 例’該間隙G設為約1 〇 " m。此外，該間隙g太大時，因發 生光學上之像差’如本實施例所示，1 〇 # m〜數1 0 # m較 好。不論如何只要將間隙G設成在使用裝置（例如投影曝光 裝置）可容許之光學上之像差内即可。V. Description of the Invention (ί) The second incident surface 33a as the light incident surface facing the exit surface 32b and the second exit surface 33b as the light exit surface which is substantially parallel to the first incident surface 3 2a of the first optical element 32. A plurality of positive pressure grooves 32c and a plurality of negative pressure grooves 3 2 d are formed in the first emission surface 32 b of the first optical element 32. In this embodiment, two negative pressure grooves 32d are arranged on two sides of the positive pressure groove 32c at two positions near both ends. These positive pressure grooves 32c and negative pressure grooves 32d are configured to keep the first exit surface 32b of the first optical element 32 and the second incident surface 33a of the second optical element 33 at a fixed interval from each other so as to face each other in a non-contact manner. The grooves of the air bearing serving as the non-contact device, that is, the positive pressure grooves 3 2c communicate with the positive pressure supply source (compressed air supply device) P (not shown) through the through holes, and supply the positive pressure groove through the positive pressure supply source p. The compressed air 32c biases the first optical element 32 in a direction to make it separate (float) from the second optical element 33. Each of the negative pressure grooves 32d communicates with a negative pressure supply source (vacuum pumping device) v through a through hole, and the air in the negative pressure groove 3 2d is evacuated by the negative pressure supply source V to move the first optical element 32. The bias is applied in a direction to approach (contact) the second optical element 33. The positive pressure supply source p and the negative pressure supply source V are controlled by appropriate adjustments to maintain the repulsive force using the positive pressure groove 32c and the suction force using the negative pressure groove 32d at a predetermined value. The first exit surface 32b of the first optical element 32 The second incident surface 3 3 a of the second optical element 33 faces the second incident surface 3 3 a while maintaining a fixed gap g. In this embodiment, the gap G is set to about 10 m. In addition, when the gap g is too large, since optical aberration occurs, as shown in this embodiment, 10 # m to several 0 # m is better. In any case, it is only necessary to set the gap G within the optical aberration allowable by the use device (for example, a projection exposure device).

第13頁 446829 五、發明說明αι) ' '一·—--- :二裝置之線性致動器35之動作轴之前端碰觸扪光 道，之一側面’藉著該動作軸伸縮，令第1光學元件 32。者導輕34移動。線圈彈_將該第i光學元傾之另 一 ：：f壓成第1光學元件32之一側面碰觸線性致動器35 之前端部。第i光學元件32之位置（移動量）利用 ί或線性編碼器等位置偵測感測器37偵測後，依照該 偵測值進行線性致動器35之回授控制，可將以光學 3 2相對於第2光學元件3 3正確的定位於任意位置。 藉此可任意微調第i光學元件32之第丨射出面m和第2 光學π件33之第2人射面33a之相對尺寸（厚度），例如 4，措耆令第！光學元件32自二點鏈線所示之位置移至實線 所不之位置，可投影光學系13之成像位置只變更占。如上 述所示*利用成像位置調整裝置31可高精度的調整各投 光學系13各自之光軸方向（z方向）。 / 在第2光學tl件33之第2入射面33a形成矩形之鉻臈等 防止接觸膜38，在非運轉狀態，即在未令空氣軸承動作之 情況防止第1光學元件32之第j射出面32b和第2光學元件 33之第2入射面33a直接接觸。 再參照圖2及圖3。在係光罩U和感光基板12之間之部 分且在和視野區域18a〜18c對應之投影光學系13及和視野 區域1 8d、1 8e對應之投影光學系丨3之間在圖2以十字線表 示之位置設置在γ方向排列之複數（在本實施例為3個）焦點 感測Is 2 0。這些焦點感測器2 〇係藉著向光罩丨丨之表面（圖 案面）及感光基板1 2之表面（曝光面）各自射出偵測光束後Page 13 446829 V. Description of the invention αι) '' One -----: The front end of the motion axis of the two-actuator linear actuator 35 touches the light beam path, and one side 'expands and contracts by this motion axis, so that First optical element 32. The guide light 34 moves. Coil spring_: Tilt the i-th optical element to the other :: f so that one side of the first optical element 32 touches the front end of the linear actuator 35. The position (movement amount) of the i-th optical element 32 is detected by a position detection sensor 37 such as ί or a linear encoder, and the feedback control of the linear actuator 35 is performed according to the detected value. 2 is accurately positioned at an arbitrary position relative to the second optical element 3 3. With this, the relative size (thickness) of the i-th emission surface m of the i-th optical element 32 and the second-person emission surface 33a of the second optical π member 33 can be arbitrarily fine-tuned, for example, 4; The optical element 32 is moved from the position indicated by the two-dot chain line to a position not indicated by the solid line, and the imaging position of the projectable optical system 13 is only changed. As shown above * The optical axis direction (z direction) of each projection optical system 13 can be adjusted with high accuracy using the imaging position adjustment device 31. / A rectangular chrome-shaped anti-contact film 38 is formed on the second incident surface 33a of the second optical element 33 to prevent the j-th emission surface of the first optical element 32 in a non-operating state, that is, when the air bearing is not activated. 32b is in direct contact with the second incident surface 33a of the second optical element 33. 2 and 3 again. The portion between the reticle U and the photosensitive substrate 12 and between the projection optical system 13 corresponding to the field of view areas 18a to 18c and the projection optical system corresponding to the field of view areas 18d and 18e are crossed in FIG. 2 The position indicated by the line is set to a plurality (3 in this embodiment) of the focus sensing Is 2 0 arranged in the γ direction. These focus sensors 2 0 emit detection beams to the surface (pattern surface) of the mask 丨 丨 and the surface (exposure surface) of the photosensitive substrate 12 respectively.

第}_4頁 446 82 9 五 '發明說明（12) 侦測其反射光，各自偵測光罩1 1之表面及感光基板1 2之表 面在Z方向之位置之裝置。 藉著在掃描工作台在X方向移動中依照這些各焦點感 /則器2 0之焦點信號在X方向以適當之取樣間距抽取資料， 可得到由和依據掃描工作台之進給量規定之X座標及依據 焦點感測器20在Y方向之設置位置規定之γ座標對應之位置 之光罩11及感光基板12之各自之Z方向之位置構成之表面 資料。 這些表面資料係表示由光罩i 1及感光基板丨2各自之平| 面度、對於各自之光罩工作台及基板工作台丨6之保持所伴i 隨之撓曲、掃描工作台之進給之不均勻等所引起之光罩Η 及感光基板12之表面之凹凸之資料，但是在本實施例，依 據對於光罩11和感光基板各自之Ζ方向之位置求光罩π 和感光基板12在Ζ方向之相對距離，將其設為表面資料。 而且’假設光罩Π係理想之平面，連光罩丨丨之表面之凹凸 包括在内全部之凹凸當作位於感光基板12處理。該表面資 料記憶於圖上未示之記憶裝置。 其次’參照圖6所示表示處理之概要之圖，說明本掃 描型曝光裝置之動作。首先’掃描工作台移至+ χ方向之端 部之既定之基板交接位置後，將感光基板1 2搬到掃描工作 台之基板工作台16上（ST1)=設光罩π已搬入並保持於掃 描工作台之光罩工作台。 然後，掃描工作台開始向應進行預備掃描之—χ方向 移動’光罩1 1及感光基板1 2相對於投影光學系1 3同步移Page} _4 446 82 9 5 'Explanation of the invention (12) A device for detecting the reflected light and detecting the position of the surface of the photomask 1 1 and the surface of the photosensitive substrate 12 in the Z direction. By moving the scanning table in the X direction in accordance with the focus signals of each of the focus sensors 20, the data is extracted at an appropriate sampling interval in the X direction, and the X specified by and according to the feed rate of the scanning table can be obtained. Surface data consisting of the coordinates and the respective positions in the Z direction of the photomask 11 and the photosensitive substrate 12 at positions corresponding to the γ coordinates specified by the position of the focus sensor 20 in the Y direction. These surface data represent the flatness of the photomask i 1 and the photosensitive substrate 丨 2 | the surface, the respective i associated with the holding of the photomask table and the substrate table 丨 6, and the subsequent bending of the scanning table Information on the unevenness of the mask and the surface of the photosensitive substrate 12 caused by unevenness is given. However, in this embodiment, the photomask π and the photosensitive substrate 12 are obtained based on the positions in the Z direction of each of the mask 11 and the photosensitive substrate. The relative distance in the Z direction is set as the surface data. Furthermore, it is assumed that the photomask Π is an ideal plane, and all the projections and depressions including the surface of the photomask 丨 are treated as being located on the photosensitive substrate 12. The surface data is stored in a memory device (not shown). Next, the operation of the scanning exposure apparatus will be described with reference to the figure showing the outline of the processing shown in FIG. First, after the scanning table is moved to the predetermined substrate transfer position at the end of the + χ direction, the photosensitive substrate 12 is moved to the substrate table 16 of the scanning table (ST1) = the photomask π has been moved in and held at Photomask workbench for scanning workbench. Then, the scanning table starts to move in the χ direction in which the preliminary scanning should be performed. The photomask 1 1 and the photosensitive substrate 12 are moved synchronously with respect to the projection optical system 1 3

第15頁Page 15

446829 五、發明說明（13) 動此時，3又利用圖上未示之遮蔽器遮蔽照明光學系1 4之 照明光。 … ’、 在該預備掃描中’偵測在光罩1丨及感光基板丨2之\ _ γ 平面内之相對姿勢（X、Y位置）（ST2)。具體而言，對準用 顯微鏡1 5被移至既定之偵測位置，當感光基板i 2之對準用 記號12a、12b位於視野區域18a、18c之位置時，利用對準 用顯微鏡1 5偵測感光基板1 2之對準用記號i 2 a、1 2 b和與其 對應之在光罩11上所形成之對準周記號之相對性位置^ ’ 差’接著’當感光基板12之對準用記號i2c、12d位於視野 區域1 8a、1 8c之位置時，利用對準用顯微鏡丨5偵測感光基 板12之對準用記號丨2C ' 12d和對應之在光罩n上所形成之 對準用記號之相對性位置偏差。 又，在該預備掃描中和該處理（S T 2 )同時偵測光罩11 及感光基板12之Z方向之相對距離（Z位置）（ST3)。具體而 言’藉著依據各焦點感測器20對於光罩11及感光基板12之 焦點信號按照既定之間距抽取光罩11及感光基板丨2在z方 向之位置，將和棋盤格狀所規定之既定之座標X及座標γ對 應之光罩11及感光基板12在Z方向之相對距離作為表面資 料儲存於記憶裝置。該表面資料在X方向之取樣位置在圖2 以十字線及十字虛線表示。此外，感光基板12上在X方向 之取樣數愈多精度愈高，但是考慮信號處理或計算處理所 需時間等之關係後適當的決定。 若掃描工作台移至一 X方向之既定之端部折回位置為 | 止’利用感光基板12及光罩工作台所配備之圖上未示之位 ！446829 V. Description of the invention (13) At this time, 3 uses a masker not shown in the figure to block the illumination light of the illumination optical system 14. ... ', in this preliminary scan,' the relative attitude (X, Y position) in the \ _ γ plane of the mask 1 丨 and the photosensitive substrate 丨 2 is detected (ST2). Specifically, the alignment microscope 15 is moved to a predetermined detection position. When the alignment marks 12a and 12b of the photosensitive substrate i 2 are located at the positions of the field of view 18a and 18c, the photosensitive substrate 15 is used to detect the photosensitive substrate. The relative positions of the alignment marks i 2 a, 1 2 b of 1 2 and the corresponding alignment marks formed on the photomask 11 corresponding to them ^ 'Poor' and then 'When the alignment marks i2c, 12d of the photosensitive substrate 12 When located in the field of view 18a, 18c, use the alignment microscope 丨 5 to detect the alignment mark of the photosensitive substrate 12 丨 2C '12d and the relative position deviation of the corresponding alignment mark formed on the photomask n . In the preliminary scan, the relative distance (Z position) in the Z direction of the photomask 11 and the photosensitive substrate 12 is detected simultaneously with the process (S T 2) (ST3). Specifically, by extracting the positions of the photomask 11 and the photosensitive substrate 2 in the z direction according to the predetermined distance between the focus signals of the focus sensor 20 and the photomask 11 and the photosensitive substrate 12 according to the predetermined distance, the checkerboard shape The relative distances in the Z direction between the photomask 11 and the photosensitive substrate 12 corresponding to the predetermined coordinates X and γ are stored in the memory device as surface data. The sampling position of the surface data in the X direction is shown in FIG. 2 by a cross line and a dotted cross line. In addition, the more the number of samples in the X direction on the photosensitive substrate 12, the higher the accuracy, but it is appropriately determined in consideration of the relationship between the time required for signal processing or calculation processing. If the scanning table is moved to a predetermined end folding position in the X direction, it is | only ′ Use the position not shown in the figure equipped with the photosensitive substrate 12 and the photomask table!

第16頁 446329 五、發明說明（14) 置修正機構在X-Y平面内移動、轉動光罩η及感光基板12 之某一方或雙方等，令光罩Η和感光基板12之姿勢彼此對 準成光罩11之各對準用記號和感光基板丨2之和該對準用記 號對應之對準用記號1 2a〜1 2d之相對的位置偏差變成最小 (ST4)。 又’依據記憶裝置所儲存之作為在χ-γ平面内之離散 位置之Z方向之相對距離之集合之表面資料，使用最小平 方法等近似方法計算近似曲面（ST 5 )。 然後’計算水平控制量（ST6)。即，依據各投影光學 系13之焦點距離之資料（預先求得），計算成像位置調整裝 置31之第1光學元件32在處於既定之起始位置之狀態之理 論上之成像位置後’依據該理論上之成像位置和在ST5所 算出之近似曲面，計算在γ方向之焦點誤差（投影光學系i 3 之戎成像位置和該近似曲面之間之在Z方向之距離）變成最 小之基板工作台16之繞X軸之轉動量（ΘΧ)及在z方向之移 動量後’將其設為對於調整基板工作台i 6之姿勢之線性致 動器1 7之水平控制量。此外，在對於基板工作台1 6之繞γ 軸之轉動也進行修正控制之情況，一樣的計算該轉動量 (0y)，也將其包括在内設為對於線性致動器17之水平控 制量。按照掃描工作台在x方向之進給量（移動量）每隔既 定之進給量計算該水平控制量。 接&著’計算利用在ST6所算出之水平控制量修正了在 S T 5所算岀之近似曲面之新的近似曲面後，依據該新的近 似曲面及該理論上之成像位置再計算殘留之焦點誤差，將Page 16 446329 V. Description of the invention (14) The correction mechanism is moved in the XY plane, and one or both of the photomask η and the photosensitive substrate 12 are rotated, so that the positions of the photomask Η and the photosensitive substrate 12 are aligned with each other into light. The relative positional deviations of the alignment marks of the cover 11 and the photosensitive substrates 2 and the alignment marks corresponding to the alignment marks 12a to 12d are minimized (ST4). According to the surface data stored in the memory device as a set of relative distances in the Z direction in discrete positions in the χ-γ plane, an approximate surface (ST 5) is calculated using an approximation method such as a least square method. Then, the horizontal control amount is calculated (ST6). That is, based on the data of the focal distance of each projection optical system 13 (preliminarily obtained), after calculating the theoretical imaging position of the first optical element 32 of the imaging position adjustment device 31 in a state of a predetermined starting position, The theoretical imaging position and the approximate surface calculated in ST5 are used to calculate the focus error in the γ direction (the distance between the imaging position of the projection optical system i 3 and the approximate surface in the Z direction) which becomes the smallest. The amount of rotation (Θχ) around the X-axis and the amount of movement in the z-direction after 16 is set to the horizontal control amount of the linear actuator 17 for adjusting the posture of the substrate table i 6. In addition, in the case where the rotation of the substrate table 16 about the γ axis is also corrected, the rotation amount (0y) is calculated in the same way, and it is also included as the horizontal control amount for the linear actuator 17 . The horizontal control amount is calculated according to the feed amount (movement amount) of the scanning table in the x direction every predetermined feed amount. Following & the 'calculation uses the horizontal control amount calculated in ST6 to correct the new approximate surface of the approximate surface calculated in ST5, and then calculates the residual based on the new approximate surface and the theoretical imaging position. Focus error

446329 五、發明說明as) * ----- (ΙτΙΓ。差叹為對於成像位置調整裝置31之成像位置控制量 算出這些控制量後’解除照明光學系14之光闕對於照 —:之遮斷’而且藉著移動掃描卫作台開始正式掃描。藉 著伴隨該掃招工作a >教| 之移動’依據和該掃描工作台在X方 °之位置對應之水平控制量令線性致動器1 7適當的動作而 調整水平’而且依據成像位置控制量令成像位置調整裝置 之線性致動器35動作’令第1光學元件32相對於第2光學 凡件33移動，調整整體上之板厚，在令各投影光學系以之 成像位置各自和感光基板12之表面大致—致下對於感光基 板12曝光（ST8)。因而’感光基板12之感光材料選擇性感 光，逐次投影轉印光罩U之圖案之成像。若對於該感光基 板12之圖案之轉印形成完了，更換別的感光基板重複一 樣之動作。 若利用本實施例之掃描型投影曝光裝置，如圖7A所 不’在正式掃描中藉著依照水平控制量控制對於基板工 作台16之線性致動器17而調整水平，使在感光基板12之表 面之各位置之焦點誤差平均上變小。而且，如圖7 B所示， 再藉著依照成像位置控制量控制對於各投影光學系i 3各自 設置之成像位置調整裝置3丨，變更調投射光學系本身之成 像位置’使利用該水平調整仍殘留之焦點誤差個別的變 小。此外’在圖7 A ’二點鏈線所示的係調整成像位置之前 之各投影光學系1 3之整體上之成像面；在圖7B，二點鏈線 所示的係調整成像位置之後之各投影光學系1 3之各自之個446329 V. Description of the invention as) * ----- (ΙτΙΓ. The difference is that after calculating these control amounts for the imaging position control amounts of the imaging position adjustment device 31, the light of the illumination optical system 14 is lifted to the photo-: And start scanning formally by moving the scanning platform. By moving along with the scanning task a > teaching | moving, the linear control actuates according to the horizontal control amount corresponding to the position of the scanning platform at X square °. The actuator 17 adjusts the level appropriately, and the linear actuator 35 of the imaging position adjustment device is actuated according to the imaging position control amount. The first optical element 32 is moved relative to the second optical element 33, and the overall plate is adjusted. It is so thick that the imaging position of each projection optical system and the surface of the photosensitive substrate 12 are approximately equal to each other so that the photosensitive substrate 12 is exposed (ST8). Therefore, the photosensitive material of the photosensitive substrate 12 is selectively photosensitive, and the transfer mask is sequentially projected. Imaging of the pattern of U. If the transfer of the pattern of the photosensitive substrate 12 is completed, repeat the same operation by replacing another photosensitive substrate. If the scanning projection exposure device of this embodiment is used, FIG. 7A adjusts the level by controlling the linear actuator 17 for the substrate table 16 in accordance with the level control amount in the formal scanning, so that the focus error at each position on the surface of the photosensitive substrate 12 becomes smaller on average. As shown in FIG. 7B, by controlling the imaging position adjustment device 3 provided for each projection optical system i 3 according to the imaging position control amount, the imaging position of the projection projection optical system itself is changed, so that the horizontal adjustment is still used. The remaining focus error becomes smaller individually. In addition, the imaging surface of each of the projection optical systems 1 3 before the adjustment of the imaging position shown in the two-point chain line in FIG. 7A; the two-point chain line in FIG. 7B The illustrated systems are each of the projection optical systems 13 after adjusting the imaging position.

第18頁 446 R2 9 五、發明說明（16) 別的成像面。 藉此消除光罩11及感光基板12之表面之凹凸等所引起 之焦點誤友，變成可在感光基板12之全區域以接近最佳焦 點之狀態進行曝光處理，可製造高精度且可靠性高之液晶 顯不裝置等微電子裝置。 此外’纟本實施例，使得依照關於光罩n及感光基板 12在Z方向之相對距離之表面資料進行該水平調整及成像 位置之調整，但是可使得只依照對於光罩i】之表面資料或 只依照對於感光基板i 2之表面資料調整。&，使得藉著合 對於感光基板1 2之線性致動器i 7動作進行用 # 焦點誤差之水平調整，但是可使得藉著令對於光;致 動II動作調整，或者使得對於兩方調整也可。'一 又’在本實施例之成像位置調整襄置31，因使得第2 門2L第？學元件33利用空氣轴承以非接觸狀態 可高精度微調各投影光學系13之成像 :置，因係非接觸’老化也少’可進行長期穩定之調 在對於成像位置調整裝置31之第i 學元件33之非接觸袭置±，在上述實^予70件32和第2先 之吸力和正μ之斥力之組合例f用了利用負f 塵之吸力和磁力之斥力之組合的也的 '利罔負 a . . ,, m ^ ^ j 又，由利闬磁力之 吸力和-樣利用磁力之斥力組合而 述之正壓或負壓、磁力等和重力、 此外將上 矛不垔刀剠用彈簧之偏壓力等適Page 18 446 R2 9 V. Description of the invention (16) Other imaging surface. This eliminates the misunderstanding of the focus caused by the unevenness of the surface of the photomask 11 and the photosensitive substrate 12, and it becomes possible to perform exposure processing in the entire region of the photosensitive substrate 12 in a state close to the best focus, which can produce high precision and high reliability. Microelectronic devices such as liquid crystal display devices. In addition, in this embodiment, the level adjustment and the imaging position adjustment are performed according to the surface data on the relative distance between the photomask n and the photosensitive substrate 12 in the Z direction, but the surface data or Adjust only according to the surface data of the photosensitive substrate i 2. & The level adjustment of the #focus error is performed with the linear actuator i 7 of the photosensitive substrate 12 in combination, but it can be adjusted with the action on the light; also may. '一 又' In the imaging position adjustment of this embodiment, the home position 31 is adjusted, so that the second door 2L is the first? The imaging element 33 can fine-tune the imaging of each projection optical system 13 in a non-contact state with an air bearing in a non-contact state. It can be adjusted in a long-term and stable manner because it is non-contact and has less aging. The non-contact impact of the element 33 is described in the above example. The combination of 70 and 32 and the first and the repulsive force of the positive μ is used in the above example f, which uses a combination of negative f dust attraction and magnetic repulsion.罔 negative a.. ,, m ^ ^ j In addition, the combination of positive and negative pressure, magnetic force, and gravity is described by the combination of magnetic attraction and repulsive force of magnetic force. Bias

第19頁 446829 五、發明說明（】7) - --—— 當的Μ合的也可。 又，若設置令成像位置調整裳置31整體傾斜之驅動機 構，可令各投影光學系13之投影位置位移。例如，利用感 光基板12之伸縮等調整各投影光學系13之投影倍率時，梯 形之視野區域18^和}8(1之重疊量就變化=因而，藉著利用 圖上未示之驅動機構令成像位置調整裝置31整體傾二'，可 調整梯形之視野區域18a和丨8(1之重疊量。於是，若利周本 實施例，因利兩成像位置調整裝置31可調整各投=光學^ 之光軸方向及和光軸方向正交之γ方向之成像位置，可 簡化投影光學系1 3之構造。 此外’上述之實施例係為 的，不是為了限定本發明而記 公開之各元件也包括屬於本發 變更或同等物》 了易於理解本發明而記載 载的。因此，在上述實施例 明之技術範圍之所有的設計 例如’在上述之實施例’說明了在構造上利用掃描工 乍I成一Ϊ移動光罩11和感光基板12，並將本發明應用於 ，得利用等倍投影曝光之掃描型投影曝光裝置之情況，但 疋也可應闬於在令光罩和感光基板在同方向或逆向各自 立同步移動下曝光之掃描型投影曝光裝置，對於投影方法 也未限定為等倍投影’係'縮小投影或放大投影的也可& 又’本發明之成像位置調整裝置不僅掃描型之曝光裝置， 也可應用於靜止型曝光裝置（例如步進機）。 此外，在本實施例之曝光裝置在曝光用照明光上可 用自水銀燈發生之g射線（波長436nm)或i射線（波長 446 82 9 五、發明說明（18) 365nm)、KrF受激準分子雷射（波長248nm)、ArF受激準分 子雷射（波長193nm)、F2雷射（波長I57nm)、Ar2雷射（波長 1 2 6 n m)以及金屬蒸氣雷射或γ a G雷射等高諧波。又，用例 如摻雜了铒（或餌和釔雙方）之光纖放大器放大自j)FB半導 體雷射或光纖雷射激發之紅外區或可見光區之單一波長雷 射後，而且使用非線性光學結晶將波長變換成紫外光之高 諧波也可。Page 19 446829 V. Description of the invention () 7)---- When the M is acceptable. In addition, if a driving mechanism is provided for tilting the imaging position adjustment dress 31 as a whole, the projection position of each projection optical system 13 can be shifted. For example, when the projection magnification of each projection optical system 13 is adjusted by using the expansion and contraction of the photosensitive substrate 12, the overlap amount of the trapezoidal field-of-view areas 18 ^ and} 8 (1 will change =. The imaging position adjustment device 31 is tilted as a whole, and can adjust the overlapping amount of the trapezoidal field-of-view areas 18a and 8 (1. Therefore, in this embodiment, due to the two imaging position adjustment devices 31, each projection can be adjusted = optical ^ The imaging position of the optical axis direction and the γ direction orthogonal to the optical axis direction can simplify the structure of the projection optical system 13. In addition, the above-mentioned embodiments are for the purpose of not limiting the present invention, and each element disclosed also includes It is a change or equivalent of the present invention, and it is easy to understand the present invention. Therefore, all the designs in the technical scope described in the above-mentioned embodiment, such as 'in the above-mentioned embodiment', describe the use of scanning technology in the structure. Ϊ Moving the photomask 11 and the photosensitive substrate 12 and applying the present invention to the case of a scanning type projection exposure device that uses equal-magnification projection exposure, but it can also be applied to the photomask and the photosensitive substrate. The scanning projection exposure device that exposes the plates in the same direction or in the opposite direction and moves synchronously. The projection method is not limited to equal magnification projection. It is also possible to reduce or enlarge the projection & and also to adjust the imaging position of the present invention. The device is not only a scanning type exposure device but also a stationary type exposure device (such as a stepper). In addition, the exposure device in this embodiment can use g-rays (wavelength 436 nm) generated from a mercury lamp on the exposure illumination light or i-ray (wavelength 446 82 9 V. Description of the invention (18) 365nm), KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F2 laser (wavelength I57nm), Ar2 Lasers (wavelength 12 6 nm) and high-harmonics such as metal vapor lasers or γ a G lasers. Amplified by j) FB semiconductor lasers using fiber amplifiers doped with europium (or both bait and yttrium) After a single-wavelength laser in the infrared or visible light region excited by a laser or fiber laser, and using a non-linear optical crystal to convert the wavelength into high harmonics of ultraviolet light, it is also possible.

在利用本實施例之曝光裝置製造之半導體裝置上例如 包括液晶顯示元件或電漿顯示器等液晶顯示裝置、半導如 元件、薄膜磁頭以及攝影元件（CCD)等。這種半導體裝置 經由裝置之功能·性能設計步驟、依照該設計步驟製作光 罩之步驟' 製作玻璃板或電晶體等基板之步驟、使用該曝 光裝置將光罩之圖案轉印至基板之步驟、裝置組立步，u (包括切割製程、接合製程、封裝製程）以及檢查步驟等製 造。 此外’本實施例之曝光裝置藉著將由多片透鏡構成$ 照明光學系1 4、具有成像位置調整裝置3丨之多組投影光学 系13裝入曝光裝置本體後進行光學調整，而且將由複数機 械零件構成之掃描工作台裝在曝光裝置本體後速接配線或 配管’再進行總調整（電氣調整、動作球認等）可製造。此 外，曝光裝置之製造最好在溫度及潔淨度等受到管理之無 塵室進行2 原封不動的引用包括說明書、申請專利範圍、圖面以 及摘要之在1998年9月25日提出之日本特許出願第The semiconductor device manufactured by using the exposure device of this embodiment includes, for example, a liquid crystal display device such as a liquid crystal display element or a plasma display, a semiconductor such as an element, a thin film magnetic head, and a photographing element (CCD). This type of semiconductor device passes the function and performance design steps of the device, a step of making a photomask according to the design step, a step of making a substrate such as a glass plate or a transistor, a step of transferring a pattern of a photomask to a substrate using the exposure device, The device assembly step, u (including cutting process, bonding process, packaging process) and inspection steps and other manufacturing. In addition, the exposure device of this embodiment is configured by a plurality of lenses. The illumination optical system 1 4 and a plurality of sets of projection optical systems 13 with imaging position adjustment devices 3 丨 are incorporated into the exposure device body for optical adjustment. The scanning table composed of parts is installed on the main body of the exposure device and quickly connected to the wiring or piping, and then the overall adjustment (electric adjustment, action ball recognition, etc.) can be manufactured. In addition, it is best to manufacture the exposure device in a clean room under temperature and cleanliness management. 2 Intact citations include instructions, patent application scope, drawings, and abstracts. Japanese franchise made on September 25, 1998 First

第21頁 446829 五、發明說明（19) 1 0-27 1 270號之全部之公開内容，記裁於本説明書 18d 1 2〜感光基板 1 2d〜對準用記號 1 3a、1 3b〜部分光學系 16〜基板工作台 基板之X、Y位置 ST4〜對準光罩.基板之X、γ位置 ST5-計真近似曲面 ST6〜計算水平控制量 ST7〜計算成像位置控制量 ST 8〜曝光 符號說明： 11〜光罩 12a 、 12b 、 12c 、 1 3〜投影光學系 1 4〜照明光學系 1 7〜線性致動器 18a 、 18b 、 18c 、 1 9、2 0〜感測器 22、23〜透鏡成分 2 3 a〜反射面 31〜調整裝置 32a、33a〜入射面 32c、33c〜正壓措 34 ~複數導輥 36〜線圈彈簧 P〜正壓供給源 ST卜載入基板 ST2、ST3〜偵測光罩 18e~視野區域 2卜直角稜鏡 22a~接合面 24〜直角稜鏡 32、33〜光學元件 32b、33b〜射出面 32d、33d〜負壓槽 3 5〜線性致動器 37~偵測感測器 V〜負壓供給源Page 21 446829 V. Description of the invention (19) 1 0-27 1 270 The full disclosure content is recorded in this manual 18d 1 2 ~ photosensitive substrate 12 2d ~ alignment mark 1 3a, 1 3b ~ part of optical 16 ~ substrate X, Y position ST4 of substrate table substrate, alignment mask. X, γ position ST5 of substrate, approximate approximate surface ST6, calculated horizontal control amount ST7, calculated imaging position control amount ST 8, exposure symbol description : 11 ~ masks 12a, 12b, 12c, 1 3 ~ projection optics 1 4 ~ illumination optics 1 7 ~ linear actuators 18a, 18b, 18c, 19, 2 0 ~ sensor 22, 23 ~ lens Component 2 3a ~ Reflecting surface 31 ~ Adjustment devices 32a, 33a ~ Incident surfaces 32c, 33c ~ Positive pressure measure 34 ~ Multiple guide roller 36 ~ Coil spring P ~ Positive pressure supply source ST, Load substrate ST2, ST3 ~ Detection Mask 18e ~ Viewing area 2 Right angle 稜鏡 22a ~ Joint surface 24 ~ Right angle 稜鏡 32,33 ~ Optical element 32b, 33b ~ Ejection surface 32d, 33d ~ Negative pressure groove 3 5 ~ Linear actuator 37 ~ Detection Sensor V ~ negative pressure supply source

第22頁Page 22

Claims (1)

4 4 6 8 2 9 六、申請專利範圍 | 1. 一種成像位置調整裝置，調整光學系之成像位置，| 該成像位置調整裝置包括： 第1及第2光學元件，具有相向之傾斜面並透射既定波 長之光； 非接觸裝置，以非接觸令該相向之傾斜面相向，以及 移動裝置，沿著和該光學系之光軸交叉之方向令該第 | 1光學元件及第2光學元件相對移動。 I 2. 如申請專利範圍第i項之成像位置調整裝置，其中 i 該第1及第2光學元件各自係楔形之玻璃板。 3. 如申請專利範圍第1項或第2項之成像位置調整裝 置，其中該非接觸裝置包括非接觸型軸承。 | 4. 如申請專利範圍第3項之成像位置調整裝置，其中 該非接觸型軸承係氣體軸承。 5 ·如申請專利範圍第1項之成像位置調整裝置，其中 具備驅動機構，相對於該光學系之光軸成一體的驅動該第 1光學元件及第2光學元件。 6. 如申請專利範圍第1項之成像位置調整裝置，其中 該移動裝置沿著和該光軸大致正交之方向驅動該第1光學 j 元件及第2光學元件。 I 7. —種曝光裝置，利罔投影光學系將圖案曝光於基 : 板，該曝光裝置包括： 第1及第2光學元件，配設於投影光學系内而且具有相 向之傾斜面並透射既定波長之光；以及 丨 移動裝置，沿著和該投影光學系之光軸交叉之方向令! \4 4 6 8 2 9 VI. Patent Application Range | 1. An imaging position adjustment device that adjusts the imaging position of the optical system, | The imaging position adjustment device includes: first and second optical elements, which have opposite inclined surfaces and transmit Light of a predetermined wavelength; a non-contact device that makes the opposite inclined surface face to each other with a non-contact, and a moving device that relatively moves the first optical element and the second optical element in a direction crossing the optical axis of the optical system . I 2. The imaging position adjusting device according to item i of the patent application range, wherein i each of the first and second optical elements is a wedge-shaped glass plate. 3. If the imaging position adjustment device of item 1 or item 2 of the patent application scope, wherein the non-contact device includes a non-contact bearing. | 4. The imaging position adjustment device according to item 3 of the patent application, wherein the non-contact bearing is a gas bearing. 5. The imaging position adjustment device according to item 1 of the patent application scope, which includes a driving mechanism for integrally driving the first optical element and the second optical element with respect to the optical axis of the optical system. 6. The imaging position adjustment device according to item 1 of the scope of patent application, wherein the moving device drives the first optical j element and the second optical element in a direction substantially orthogonal to the optical axis. I 7. —An exposure device that exposes a pattern to a substrate: a projection optical system. The exposure device includes: first and second optical elements, which are arranged in the projection optical system and have opposite inclined surfaces and transmit a predetermined light. Wavelength of light; and 丨 mobile device, along the direction that intersects the optical axis of the projection optics order! \ 第23頁 446829 六、申請專利範圍 該第1光學元件及第2光學元件相對移動。 8. 如申請專利範圍第7項之曝光裝置=其中具備以非 接觸令該相向之傾斜面相向之非接觸裝置。 9. 如申請專利範圍第7項之曝光裝置 > 其中該第i及第 2光學元件各自係楔形之玻璃板。 1 0.如申請專利範圍第8項之曝光裝置，其中該非接觸 裝置包括非接觸型軸承。 Π .如申請專利範圍第1 0項之曝光裝置，其中該非接 觸型軸承係氣體軸承。 1 2.如申請專利範圍第7項之曝光裝置*其中具僙驅動 機構，相對於該光學系之光軸成一體的驅動該第1光學元 件及第2光學元件。 13.如申請專利範圍第7項之曝光裝置，其中該移動裝 置沿著和該光轴大致正交之方向驅動該第1光學元件及第2 光學元件。 1 4.如申請專利範圍第7項之曝光裝置，其中具備保持 具有該圖案之光罩之光罩工作台。 1 5.如申請專利範圍第1 4項之曝光裝置，其中具備偵 測關於對於該光軸方向之該基板和該光罩之相對距離之資 訊之偵測裝置。 | 1 6.如申請專利範圍第1 5項之曝光裝置，其中該移動 | 裝置依照該偵測裝置之偵測結果令該第1光學元件和該第2 光學元件相對移動。 1 7.如申請專利範圍第7項之曝光裝置，其中該曝光裝Page 23 446829 6. Scope of patent application The first optical element and the second optical element move relatively. 8. If the exposure device in the scope of patent application No. 7 = there is a non-contact device which makes the facing inclined surface face to face with non-contact. 9. The exposure device according to item 7 of the patent application > wherein each of the i-th and second optical elements is a wedge-shaped glass plate. 10. The exposure device according to item 8 of the patent application, wherein the non-contact device comprises a non-contact bearing. Π. The exposure device according to item 10 of the patent application scope, wherein the non-contact bearing is a gas bearing. 1 2. The exposure device according to item 7 of the scope of patent application * which includes a driving mechanism that drives the first optical element and the second optical element integrally with respect to the optical axis of the optical system. 13. The exposure device according to item 7 of the patent application, wherein the moving device drives the first optical element and the second optical element in a direction substantially orthogonal to the optical axis. 1 4. The exposure apparatus according to item 7 of the scope of patent application, which includes a mask table for holding a mask having the pattern. 1 5. The exposure device according to item 14 of the scope of patent application, which includes a detection device that detects information about the relative distance between the substrate and the photomask in the direction of the optical axis. 1 6. The exposure device according to item 15 of the patent application scope, wherein the moving | device moves the first optical element and the second optical element relative to each other according to the detection result of the detecting device. 1 7. The exposure device according to item 7 of the scope of patent application, wherein the exposure device 第24頁 446 82 9 六、申請專利範圍 置係在令該基板移動之間將該圖案曝光之掃描型曝光裝 置。 1 8,如申請專利範圍第7項之曝光裝置，其中該曝光裝 置具備多組該投影光學系。 1 9.如申請專利範圍第1 8項之曝光裝置，其中將該第1 投影光學系及第2投影光學系配設成該多組投影光學系之 中第1投影光學系之投影區域之一部分和第2投影光學系之 投影區域之一部分重疊。 2 0. —種成像位置調整方法，調整光學系之成像位 置’該成像位置調整方法包括： 將具有相向之傾斜面並透射既定波長之光之第1及第2 | 光學元件配設於該光學系之步驟；以及 以非接觸令該第1光學元件及該第2光學元件沿著該傾 斜面移動之步驟。 i 2 1.如申請專利範圍第2 0項之成像位置調整方法，其 | 中包括相對於該光學系之光轴成一體的驅動該第1光學元 件及該第2光學元件之步驟。 2 2.如申請專利範圍第2 0項之成像位置調整方法，其 中該既定波長之光入射之該第1光學元件之入射面和該既 定波長之光射出之該第2光學元件之射出面係大致平行。 ： ! 2 3. —種曝光方法，利用投影光學系將圖案曝光於基 板，該曝光方法包括： 將具有相向之傾斜面並透射既定波長之光之第丨及第2 ! 光學元件配設於該投影光學系内之步驟；以及Page 24 446 82 9 6. Scope of patent application The scanner is a scanning exposure device that exposes the pattern between moving the substrate. 18. The exposure device according to item 7 of the patent application scope, wherein the exposure device is provided with a plurality of sets of the projection optical system. 19. The exposure device according to item 18 of the scope of patent application, wherein the first projection optical system and the second projection optical system are configured as a part of the projection area of the first projection optical system among the plurality of sets of projection optical systems. It partially overlaps with one of the projection areas of the second projection optical system. 2 0. — An imaging position adjustment method, adjusting the imaging position of the optical system 'The imaging position adjustment method includes: arranging the first and second | optical elements having opposite inclined surfaces and transmitting light of a predetermined wavelength; And a step of moving the first optical element and the second optical element along the inclined surface in a non-contact manner. i 2 1. The imaging position adjustment method according to item 20 of the patent application scope, which includes the step of driving the first optical element and the second optical element integrally with respect to the optical axis of the optical system. 2 2. The imaging position adjustment method according to item 20 of the scope of patent application, wherein the incident surface of the first optical element where the light of a predetermined wavelength enters and the exit surface of the second optical element where the light of the predetermined wavelength exits are Roughly parallel. : 2 3. An exposure method that uses a projection optical system to expose a pattern to a substrate. The exposure method includes: arranging the first and second optical elements having opposite inclined surfaces and transmitting light of a predetermined wavelength. The steps in the projection optics; and 第25頁 4 46 82 9 六、申請專利範圍 令該第1光學元件及該第2光學元件沿著和投影光學系 之光轴交叉之方向移動之步驟。 2 4.如申請專利範圍第23項之曝光方法，其中該第1光 學元件及該第2光學元件以非接觸進行該相對移動。 2 5.如申請專利範圍第2 3項之曝光方法，其中該曝光 之光入射之該第1光學元件之入射面和該曝光之光射出之 該第2光學元件之射出面係大致平行。 2 6.如申請專利範圍第2 3項之曝光方法，其中包括相 對於該光學系之光軸成一體的驅動該第1光學元件及該第2 光學元件之步驟。 2 7.如申請專利範圍第23項之曝光方法，其中包括在 令該基板移動之間將該圖案曝光之步驟。 2 8.如申請專利範圍第23項之曝光方法，其中包括將 該圖案之一部分重疊後曝光於該基板之步驟。 2 9. —種基板，使用如申請專利範圍第2 3項之曝光方 法將該圖案曝光。Page 25 4 46 82 9 VI. Scope of patent application The step of moving the first optical element and the second optical element in a direction crossing the optical axis of the projection optical system. 2 4. The exposure method according to item 23 of the scope of patent application, wherein the first optical element and the second optical element perform the relative movement in a non-contact manner. 2 5. The exposure method according to item 23 of the scope of patent application, wherein the incident surface of the first optical element where the exposed light enters and the exit surface of the second optical element where the exposed light exits are substantially parallel. 2 6. The exposure method according to item 23 of the scope of patent application, including the step of driving the first optical element and the second optical element integrally with respect to the optical axis of the optical system. 2 7. The exposure method according to item 23 of the patent application scope, including the step of exposing the pattern between moving the substrate. 2 8. The exposure method according to item 23 of the scope of patent application, which includes the step of exposing a part of the pattern to the substrate and exposing it on the substrate. 2 9. A substrate, the pattern is exposed using the exposure method as described in item 23 of the patent application. 第26頁Page 26
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