TW444210B - Electric conduction heating mechanism and electrostatic chuck using this electric conductive heating mechanism - Google Patents

Abstract

The present invention is about a kind of electric-conduction heating mechanism and the electrostatic chuck used by this electric-conduction heating mechanism. The characteristic of this invention is to eliminate the drawbacks of frangibility and being softened at high temperature for the electric-conduction heating mechanism formed on the ceramic insulating substrate. On the surface of insulating nitride series or carbide series ceramic substrate, micro-organization obtained from the melted/fused structure of the resistive heating material coating film, which is formed by silicide monomer organization, mixed organization of silicide and Si, or the Si monomer organization, is adopted. In addition, in order to provide an electrostatic chuck, which can quickly and precisely control the temperature of an object to be processed such as a semiconductor substrate that is electrostatically attracted, the structure having the electrostatically attracting mechanism at the bottom surface of the electrode, which is formed by the attracting mechanism ceramics as well as the ceramic bottom surface and is combined to a heating mechanism where a cooling mechanism is combined to the bottom surface of the heating mechanism, is adopted. The heating mechanism has the electric insulation characteristics, in which the electro-thermal material film that can be fused to ceramics is held between two ceramic substrate materials having the same or similar linear expansion factor. The film is used as the sintered or melted/fused structure with these two substrate materials.

Description

4 44 21 Ο Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明（ί ) 技術領域 本發明涉及導電發熱體，更詳細地說，它是渉及在陶 瓷絕緣基材的表面上，抵抗發熱材料的被膜溶融融著之 構造的導電發熱體. 又，本發明渉及靜電夾具的構造，更詳綑地說，它是 渉及能急速，精密控制靜電吸著之半導體基板等被處理 材溫度的靜電夾具的構造. 技術背景 在導電發熱體的領域上，如習知，對於導熱馊良好的 陶瓷扳而言，假如把加熱回路加熱，則可得到溫度變化 不均的小面狀發熱體.此種陶瓷加熱器須具有以下的特 性： ① 回路與陶瓷的密著強度要高. ② 加熱回路的材質須有良好的抗氧化性，且可於高溫下 使用. ③ 須高發熱密度的加熱器，屝力P熱叵路的詛抗要高.且 最重要的是可以低成本製造大型品. 但，就目前靣言，僅有以π兩種類型： (1) 預先於燒結過之陶瓷板加熱的電熱金屬回路型. 犹型是把白金，白金合金，或銀等之貴金羼的粉末與玻 瑪混合而成之糊狀物燒結成回路樣之構造.其缺點爲： ①僅限於陶瓷面的加熱型（單靣加熱）.即因被邡熱 過之回路面會裸露出來，故恷民途之分，此部汾有絕緣 _4_ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） ——--------*裝-- (請先閱讀背面之注意事項再填寫本頁) -a f 444 2 1 Ο Α7 Β7 λ 五、發明説明（ 之必要. ②電熱回路的密著強度有易產生微剝落的缺點. @最高使用溫度受限於使用在黏合劑之玻璃融點，僅 介於4〇0〜500 t；之間；無法使闬於超過1000 t：以上之高 溫. (2 ) 陶瓷燒結時與電熱回路一起加熱型.此型爲於陶 瓷印刷電路板，利用如鎢等之髙融點金屬粉末糊印刷成 回路樣，進而於印刷回路蓋上印刷電路扳，加壓並一起 燒結而成之搆造.最終的構圖爲於陶瓷板甲內藏電熱回 路（雙面加熱），電熱回路的雙面爲陶瓷板. (1)的缺點，亦即，雖解除電熱回路剝落的缺點， Φ相反地，因必須以陶瓷包裹回路，無法形成回路至胃 端部，以致有周端部溫度下降的缺點，難以得到均勻的$ 度分佈. ② 薄的卒板狀的物體加熱時會產生變形：爲得到無變形 的物體須加壓燒結.以此方法，於陶瓷加熱時存在著變、形 的根本問題.很難得到無變影的大型尺寸的東西. 次元形狀体也是不可能.因模具的須要，以少量品來說# 成本變得極高. ③ 電熱金屬僅限於在陶瓷燒成溫度時不會溶解的鎢，妄目 等之高融點金屬鎢與鉬有易被氧化的缺點，對包$胃 熱回路的陶瓷來說，被要求做到無缺陷及完全機密性.# 大氣中高溫長時間使甩時會有問題.另外，鎢，錯等$ 有電阻小，發热密度亦小的問題.對海瓷加熱器而言胃 ---------裝------訂------4 (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印製 I ΑΛΑ 2 1 Ο Α7 _____Β7 _ 五、發明説明（\ ) 以上的問題. 另一方面，代表二矽化鉬（MoSi2)的矽化物，因極具 抗氧化性，故常被用於大氣中及高溫下能導電發熱的材 料.這些矽化场發熱體最大的缺點是非常的脆弱.因此 脆弱性之故，通常雖可與玻璃粉末混合，與擁有某種程 度的強度的板或棒燒結來加以使用，因玻璃被用來當作 粘合劑，在耐熱性上也有問題·又s矽化物具有在高溫 下會軟化的性買，因而發热體有垂下變形的問題， 另外，在靜電夾盤的分野方面，半導體的等離子加工， 若集積度變高，則更要求極細化及嚴格的精度. 雖然爲了達成等離子加工的極細化，高精度化的目的， 等離子處理溫度成爲極重要的因素，但以現狀設備而言， 爲：ί處理政晶圓的過昇溫防止，僅於冷卻（腐飽處理）， 成膜處理（CVD)上，事寊上是設定在比設定溫度稍泜，放 任處理中的自然昇溫. 經濟部中央樣準局員工消費合作社印裝 I IH I I n 1111 ^ (請先w讀背面之注^^項再填寫本頁) 現實上雖有上述的狀況，本業者並非沒理解到溫度管 理的重要性，而是以經濟的速度，能管理溫度的機構並 不存在.若以實驗室的無幌於生產性，雖可做到精密的 溫度管理，但因在現狀的生產線上，例如因應處理薄暌 的枋質，於各薄膜上，在不使生產性下降的情況，且快 速地處理改變對膜質最適當的溫度旳，能快速且精密控 制的機搆並不存在， 爲解決此問題，因應現實的處理速度，須有能迅速地 調節溫度的機構.即在不降低速度的情浣下，須有能迅 _ 6 本紙張尺度適用中國國家梯準（CNS > Α4規格（2Ϊ0Χ 297公釐）" --- 444 2 1 Ο 經濟部中央標準局員工消費合作社印聚 Α7 Β7 五、發明説明（+ ) 速且連續地調節溫度的機構. 又，在等離子處理以外，爲提升裝置的運轉率，對設 定的溫度快速加熱或加熱後迅速冷郤的要求也多. 在此也需要能迅速且連續地調節溫度的機構. 另夕V，於真空處理的情況，對非處理物表面己付著的 濕氣，爲了玦速達到所定的真空度，最好先把非處理物 如熱，但在現實上並無快速地僅葑非處理物SD熱旳方法. 本發明鑑於相關之狀況：其目的如\ : ①使用預先燒結好的陶瓷爲基材，因應目的，能適用電 熱回路的單面或雙面加熱. ®不必加壓就能解法上述陶瓷燒成時扭®的問題. ®回路與陶瓷的密著強度高. Φ具優良的抗氧化性且可使甩於大氣中高溫. Φ能以低成本製造大型品及三次元夥跃體. ®高阻抗，高瓦特密度的加熱器亦钯可能的新構造的導 電發熱體當作提供方法. 又，在吸著固定半導體基板及其他被處理物的同時， 對所定溫度，使其急速加熱或急速胃降溫，提供能迅速 地精密調節設定溫度的，新構造的靜電夾盤. 發明說明 有關導電發熱體的上述間題，可依以t的方法夾解決. 即本發明的導電發熱體，是以於電氣絕緣性的氮化物系 或炭化饬系陶瓷基紂表面上，徽組織是矽化物，或矽化 _τ_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印装 Α7 Β7 五、發明説明（？） 物與Si的混在組織，或由Si單體組織變成阻抗發熱材料 的被膜由融著的搆造所變爲特徵. 又，本發明的導電發熱體，是以於電氣絕緣性的陶瓷 基材的表面上，含有〇.5%Si以上的活性金屬，旦微組織 是矽化物覃體組織.或矽化物與St约混在組織，或由單 體組織變成阻抗發熱材料的被膜由融著的構造所變爲特 徵· 在上述導電發熱體的構成，以陶瓷基材爲氮化鋁系， 抗發熱材料的微組織爲矽化物與Si混合的組織構成爲 佳-4 44 21 〇 Α7 Β7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Description of the Invention (Technical Field) The present invention relates to a conductive heating element. In more detail, it is applied to the surface of a ceramic insulating substrate. A conductive heating element having a structure in which the film of the heat-resistant material is fused. In addition, the structure of the present invention and the electrostatic fixture, in more detail, it is a semiconductor substrate, etc. that can rapidly and precisely control electrostatic adsorption. Structure of the electrostatic fixture at the material temperature. Technical background In the field of conductive heating elements, as is known, for ceramic plates with good thermal conductivity, if the heating circuit is heated, small surface heat generation with uneven temperature changes can be obtained. This ceramic heater must have the following characteristics: ① The adhesion strength between the circuit and the ceramic must be high. ② The material of the heating circuit must have good oxidation resistance and can be used at high temperatures. ③ High heating density heating Device, the pressure resistance of the thermal circuit is higher. And the most important thing is that large-scale products can be manufactured at low cost. However, at present, there are only two types of π: (1) in advance The electrothermal metal circuit type heated by the finished ceramic plate. Still type is a sintered paste made of platinum, platinum alloy, or silver and other precious gold tin powder and plexiglass into a circuit-like structure. Its disadvantages are: ： ①The heating type is limited to the ceramic surface (single heating). That is, the circuit surface that has been heated will be exposed. Therefore, this section has insulation. _4_ This paper standard is applicable to Chinese national standards ( CNS) Α4 specifications (210 × 297 mm) ------------ * equipment-(Please read the precautions on the back before filling out this page) -af 444 2 1 〇 Α7 Β7 λ 5. Description of the invention ( Necessity. ② The adhesion strength of the electric heating circuit has the disadvantage of being prone to micro-peeling. @The maximum use temperature is limited by the melting point of the glass used in the adhesive, which is only between 400 ~ 500 t; Above 1000 t: above the high temperature. (2) The ceramic is heated together with the electric heating circuit during sintering. This type is printed on the ceramic printed circuit board by using a metal powder paste such as tungsten to form a circuit, and then printed. The circuit cover is covered with a printed circuit board, pressurized and sintered together. The composition of the electric heating circuit is built in the ceramic plate armor (double-sided heating), and the two sides of the electric heating circuit are ceramic plates. (1) Disadvantage, that is, although the defect of peeling off the electric heating circuit is lifted, Φ Conversely, it is necessary to use The ceramic wrap circuit cannot form a circuit to the stomach end, which has the disadvantage that the temperature at the peripheral end decreases, and it is difficult to obtain a uniform $ degree distribution. ② A thin plate-shaped object will deform when heated: In order to obtain an object without deformation Pressure sintering is required. In this method, there is a fundamental problem of deformation and deformation when the ceramic is heated. It is difficult to obtain large-size objects without changes. Dimensional shapes are also impossible. Due to the requirements of the mold, a small amount of products is required. Said # The cost becomes extremely high. ③ The electrothermal metal is limited to tungsten that does not dissolve at the ceramic firing temperature. The high melting point metal tungsten and molybdenum have the disadvantage of being easily oxidized. For ceramics, it is required to be defect-free and completely confidential. # High temperature in the atmosphere will cause problems when it is thrown for a long time. In addition, tungsten, etc. $ has a small resistance and a small heating density. For sea porcelain Stomach in terms of heater ----- Order ------ 4 (Please read the notes on the back before filling out this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, I ΑΛΑ 2 1 Ο Α7 _____ Β7 _ V. Description of the invention (\) The above problems. On the other hand, silicides that represent molybdenum disilicide (MoSi2), because they are highly resistant to oxidation, are often used for materials that can conduct heat in the atmosphere and at high temperatures. These silicide field heaters are the largest The disadvantage is that it is very fragile. Because of its fragility, it can usually be mixed with glass powder and sintered with a plate or rod that has a certain degree of strength. Because glass is used as an adhesive, it is resistant to heat There is also a problem in terms of properties. Also, the silicide has the property of softening at high temperatures, so the heating element has the problem of vertical deformation. In addition, in the field of electrostatic chucks, if the plasma processing of semiconductors becomes high, It is even more demanding for extreme refinement and strict precision. Although the plasma processing temperature has become an extremely important factor in order to achieve the miniaturization and high precision of plasma processing, as far as the current equipment is concerned, it is: Rise Temperature prevention is only for cooling (saturation treatment) and film formation treatment (CVD). It is set at a slightly higher temperature than the set temperature, allowing natural heating during processing. Printed by the Consumer Cooperative of the Central Procurement Bureau of the Ministry of Economic Affairs I IH II n 1111 ^ (please read the note ^^ on the back before filling out this page) In reality, despite the above situation, the industry is not failing to understand the importance of temperature management, but at an economical speed, it can There is no mechanism to manage the temperature. If the laboratory is not used for productivity, although precise temperature management can be achieved, it is on the current production line, for example, it is used to process thin plutonium, on each film, In the case of not reducing productivity, and quickly processing and changing the most suitable temperature for film quality, there is no mechanism that can quickly and precisely control. In order to solve this problem, it must be adjusted quickly according to the actual processing speed. The mechanism of temperature. That is, without speed reduction, there must be a speed of 6 _ 6 This paper size is applicable to the Chinese national standard (CNS > Α4 size (2Ϊ0χ 297 mm) " --- 444 2 1 〇 Economy Central Bureau of Standards Industrial and consumer cooperatives printed poly Α7 Β7 V. Description of the invention (+) A mechanism that adjusts temperature continuously and rapidly. In addition to plasma processing, in order to improve the operating rate of the device, the set temperature is rapidly heated or rapidly cooled after heating. There are many requirements. Here, a mechanism that can adjust the temperature quickly and continuously is also needed. In addition, in the case of vacuum processing, the moisture that has been applied to the surface of non-processed objects, in order to quickly reach a predetermined vacuum degree, the most Fortunately, the non-processed material is hot, but in reality, there is no quick method to only heat the non-processed material SD. In view of the related situation, the present invention has the following objectives: \ ① Use pre-sintered ceramics as the substrate, Depending on the purpose, one- or two-sided heating of the electric heating circuit can be applied. ® The above-mentioned problem of torsion during firing of ceramics can be solved without pressing. ® High adhesion strength between circuit and ceramics. Φ has excellent oxidation resistance and It can be thrown at high temperature in the atmosphere. Φ can manufacture large-scale products and three-dimensional jumpers at low cost. ® High-impedance, high-watt-density heaters are also available as new methods of conductive heating elements with palladium. Also, Sucking While setting the semiconductor substrate and other objects to be processed, it can rapidly heat or cool the stomach at a predetermined temperature, and provide a newly constructed electrostatic chuck that can quickly and precisely adjust the set temperature. DESCRIPTION OF THE INVENTION The problem can be solved according to the method of t. That is, the conductive heating element of the present invention is a nitride-based or carbonized samarium-based ceramic substrate on the surface of electrical insulation. The emblem structure is silicide, or silicidation. Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Α7 Β7 5. Description of the invention (? ) The mixed structure of the material and Si, or the coating changed from the Si single structure to the resistance heating material is characterized by the fused structure. The conductive heating element of the present invention is an electrically insulating ceramic substrate. On the surface, active metals containing more than 0.5% Si are contained, and the microstructure is silicide and tandem structure. Silicide and St are mixed in the tissue, or the coating that turns from a single tissue into a resistive heating material is formed by a fusion structure. Features changed: In the structure of the above-mentioned conductive heating element, it is preferable that the ceramic substrate is an aluminum nitride system, and the microstructure of the heat-resistant material is a structure in which silicide and Si are mixed.

It匕外，以陶瓷基轲爲炭化矽素系，抗發熱衬料的徽絚 織爲矽化物與Si混合的組織構成爲佳， 又，在上述電氣絕綠性的陶瓷基材表面上，於含有 0. 5%以上的活愷金屬構造，陶瓷基轲爲氧化物系構成爲 佳. 又，以上述氣化物系陶瓷爲氧化纟s糸，阻f/i發熱材料 的微組織爲矽化物組織的構成爲佳. 有關靜電夾具的上述問題，依以下構造旳靜電夾具夾 解決.即，本發明的靜電夾具爲： 1. 由具介電體陶瓷與該陶瓷的底靣所形成的電極之靜電 吸著機構的底面結合加熱機搆的構造.該盅熱機構在電 氣絕緣性上f於線膨脹係數相罔或近假的雨枚陶瓷基材 之間，夾著對該陶瓷有融著性的電熱材料膜.該膜是以 與該二校基材溶顳融著的構造爲特黴 8 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------裝------訂 (請先閱讀背面之注意事項再填寫本頁) Λ44 2 1 Ο Α7 Β7 五、發明説明（& ) 2. 具介電體陶瓷與該陶瓷的底面m形成的電極之靜電吸 著機構的底面結台加熱機構.形成由該加熱機構的底面 與冷卻機構結合之構造，該加熱機構在電氣絕綠性上， 於線膨脹係數項同或近似的兩枚陶瓷基材之間，夾著對 該陶瓷有融著性的電熱材料膜，該膜是以與該二枚基材 溶融融著的構造爲特徵. 於上述構成 3. 上述介電體陶瓷與加熱機構的兩枚陶瓷基紂是以氮 化鋁系爲特徵. 並且， 4 .上述電熱贫料，能搆成微組織爲矽化物與矽的混在 組織之金屬. 圖面簡單說明 圖1爲本發明的導電發熱體實施之一形態說明圖. 圖2爲本發明的導電發熱體其他實施形態說明圖. 圊3爲本發明的導電發熱體更進一步其他實施形態 說 明讀1 . 經濟部中央標隼局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 圖4爲本發明的導電發熱體實施例說明圖. 圖5爲本發玥的導電發熱體融著金屬如熱回路之一 例表示圖. 圖6爲圖5之A-A斷面圖. S 7爲圖6之構造的製造工程之一例表示圖. g 8爲5Π熱叵路短路防止構造說明圖. 9 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 444 2 1 Ο Α7 Β7 五、發明説明（9 ) 圖9爲陶瓷端面封止構造說明圖. 圖1〇爲加熱回路的端夫與端子接續構造說明圖. 圖11爲加熱回路的端末與端子接續構造說明S. 圖12爲坑熱E路的端末與導線接續構造說明圖. 圖1 3爲本發明的導電發熱體實施例說明圖. 圖1 4爲本發钥的導電發熱體實施例說明圖. 圖15爲實施例說明圖 圖1 6爲實施例說明圖 圖1 7爲本發明的靜電夾具基本構造說明圖（介電體陶 瓷爲澆結體）. 圖18爲志發明的靜電夾具基本構造說明圖（介電體陶 瓷爲成膜形成）. 圖19爲本發明的靜電夾具基本構造說明圖（圖17的 構造與冷卻機構桥接合而成之物）. 圖20爲本發明的靜電夾具基本構造說明圖（圖18的 構造與冷郤機構所接合而成. 圖2 1爲介電體陶瓷爲燒結體的場合的電極構造說明 圖. 經濟部中央標準局員工消費合作社印製 (請先聞讀背面之注意事項再填寫本頁) 圖22爲介電體陶瓷爲燒結體的場合的電極樽造說明 圖. 圖23爲介電體陶瓷爲燒結體的場合的電極構造說明 圖· 圖24爲本發明的靜電夾具基本構造說明圖. 圖2 5爲本發男的靜電夾具基本構造說明圖. 10 本紙張尺度適用中國國家標準（CNS } A4規格（210X297公釐） 444210 A7 B7 五、發明説明（父） 圖26爲本發明的靜電夾具基本構造說明圖 發明實施的最佳形態 首先，說明有關本發明的導電發熱體. 含電氣絕緣性的氮化物系.炭化物系陶瓷的代表物氮 化鋁陶瓷.氮化矽素陶瓷，炭化矽素陶瓷.t發明的電 氣絕緣性的氮化物系及炭化物系陶瓷，爲包含這些的氮 化鋁陶瓷，氮化矽索陶瓷，炭化矽素陶瓷簞酱，及這些 與其他氮化物，炭化物，硼化物，氧化物陶瓷複合而成 的陶瓷. 在這些氮化物及炭化物之中，由於氮化鋁，炭化矽素， 及這些複合陶瓷具有良好的導熱性，最能適闬於當作導 電發熱體的基材. 若用二枚陶瓷作基材，於二枚陶瓷之間挾著抗發熱 材料得的膜，使二枚陶瓷的雙面融著的構造的，所謂的 雙面加熱型的導電發熱體的場合，二枚陶瓷未必要相同， 钽最好選定線膨脹係數近似的陶瓷. 經濟部中央樣準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁)In addition to It, it is better to use ceramic-based silicon as the carbonized silicon-based material, and the heat-resistant lining of the textile material is preferably composed of silicide and Si. The structure of the electrically insulating green ceramic substrate is Contains more than 0.5% of the active Kai metal structure, the ceramic base is preferably an oxide-based composition. In addition, the above-mentioned gaseous ceramics are made of osmium oxide, and the microstructure of the f / i heating material is a silicide structure. The above-mentioned problems related to the electrostatic clamp are solved according to the following structure 旳 electrostatic clamp clamp. That is, the electrostatic clamp of the present invention is: 1. The static electricity of the electrode formed by the dielectric ceramic and the bottom plate of the ceramic The bottom surface of the suction mechanism is combined with the structure of the heating mechanism. The heat insulation mechanism of the cup is electrically insulated between the linear expansion coefficients or the pseudo-rain glass ceramic substrates, and sandwiches the electrothermal heat that is fused to the ceramic. Material film. The film is a special mold with a structure that melts with the substrate of the second school. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). ------ Order (Please read the precautions on the back before filling this page) Λ44 2 1 Ο Α7 Β7 V. Explanation of the invention 2. The bottom surface of the electrostatic adsorption mechanism with an electrode formed by the dielectric ceramic and the bottom surface m of the ceramic is a heating mechanism. A structure combining the bottom surface of the heating mechanism and the cooling mechanism is formed. In terms of electrical insulation, the heating mechanism is sandwiched between two ceramic substrates having the same or similar linear expansion coefficient term as an electrothermal material film having adhesiveness to the ceramic. The substrate is characterized by a fused structure. In the above structure 3. The two ceramic bases of the dielectric ceramic and the heating mechanism are characterized by an aluminum nitride system. Furthermore, the above-mentioned electrothermal lean material can constitute The microstructure is a metal with a mixed structure of silicide and silicon. Brief description of the drawing Figure 1 is an explanatory diagram of an embodiment of the conductive heating element of the present invention. Figure 2 is an explanatory diagram of another embodiment of the conductive heating element of the present invention. 圊 3 This is the conductive heating element of the present invention. Further explanation of other embodiments. Read 1. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Figure 4 shows the implementation of the conductive heating element of the present invention. example Illustrative diagram. Fig. 5 is an example diagram of a conductive heat-generating body fused with a metal such as a thermal circuit. Fig. 6 is an AA sectional view of Fig. 5. S 7 is an example of a manufacturing process of the structure of Fig. 6. g 8 is an explanatory diagram of the structure of 5Π thermal loop short circuit prevention. 9 This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 444 2 1 〇 Α7 Β7 V. Description of the invention (9) Figure 9 is ceramic An illustration of the sealing structure of the end face. Fig. 10 is an explanatory diagram of the terminal structure of the heating circuit and the terminal connection structure. Fig. 11 is an explanation of the terminal structure of the heating circuit and the terminal connection structure. Illustrative diagram. Fig. 13 is an explanatory diagram of an embodiment of the conductive heating element of the present invention. Fig. 14 is an explanatory diagram of an embodiment of the conductive heating element of the issuing key. Fig. 15 is an explanatory diagram of the embodiment. Fig. 16 is an explanatory diagram of the embodiment. 1 7 is an illustration of the basic structure of the electrostatic fixture of the present invention (the dielectric ceramic is a cast body). FIG. 18 is an illustration of the basic structure of the electrostatic fixture of the invention (the dielectric ceramic is formed into a film). FIG. 19 is this Explanatory diagram of the basic structure of the electrostatic clamp of the invention (the structure and cooler of Fig. 17 Figure 20 shows the basic structure of the electrostatic clamp of the present invention (the structure of Figure 18 and the cooling mechanism are joined. Figure 21 shows the electrode structure when the dielectric ceramic is a sintered body. Illustration. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). Figure 22 is an illustration of the electrode bottle when the dielectric ceramic is a sintered body. Illustration of the electrode structure when the electric ceramic is a sintered body. Fig. 24 is an illustration of the basic structure of the electrostatic fixture of the present invention. Fig. 2 5 is an illustration of the basic structure of the electrostatic fixture of the man. (CNS) A4 specification (210X297 mm) 444210 A7 B7 V. Description of the invention (father) Figure 26 illustrates the basic structure of the electrostatic fixture of the present invention. The best form of the invention is first explained about the conductive heating element of the present invention. Including Electrically insulating nitride-based. Representative of carbide-based ceramics. Aluminum nitride ceramics. Silicon nitride ceramics, siliconized ceramics. Electrically insulating nitride-based and carbide-based ceramics invented by Contains these aluminum nitride ceramics, silicon nitride ceramics, silicon carbide ceramic sauce, and these ceramics combined with other nitrides, carbides, borides, oxide ceramics. Among these nitrides and carbides Because aluminum nitride, silicon carbide, and these composite ceramics have good thermal conductivity, they are most suitable as substrates for conductive heating elements. If two ceramics are used as the substrate, between the two ceramics: A film made of an anti-heating material that has two ceramics fused on both sides. In the case of a so-called double-sided heating type conductive heating element, the two ceramics are not necessarily the same. Tantalum is preferably selected with an approximate linear expansion coefficient. Ceramics. Printed by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page)

Si與所有固溶體作成的元素，Mfe除Ge之外.Si幾乎 可與大部份的金屬作成矽化物， 若X爲Si與矽化物所作成的元素，因X-Si合金的Si的 變化而導致微組織的基本變化如 φ若Si慢慢增加，於某組成之處肜成最初的矽化物.祀 此組成當作Si(l).於Si<Si(l)的區域，變戚X金屬的基體 與X金屬的矽化物相之混在組織或Si多少固溶於X金屬 1 1 本紙張尺度適用中國國家操準（CNS ) A4規格（210X297公釐） 444 2 1 Ο Α7 Β7 五、發明説明（？） 的基體與X金鬮的矽化物相之混在組織. ©苔由Si( 1)增加Si，則所組成的矽化物便陸續的岀現. 由超過某組成Si(2)之處呈現矽化物與Si的混合共晶.Si 爲最富矽化物的X元素，Si(2)爲最富矽化物旳Si.在Si(l) S Si i Si(2)的區域，此區域爲一種或二種以上矽化物的混 在組織. ③ 超過Si(2)未滿Si(100%)之間 Si (2) < Si < Si (100%) 此區域爲Si與矽化物的混在組織. ④ 於Si = 1 00%時，成爲Si的多結晶絚織. 在此，於上述x-si的二冗系即使添加第第4，第5··. 等元素，組織這種東西的基本架構，即對基體存在著矽 化物的基本架構不會改變.即第3，第4，第5·_.等元素固 溶爲基體，固溶成矽化物而彤成複矽化物，或形成其他 的化合物結晶或分離成基體，至少矽化物（或複矽化物） 不會由基體消滅. 又，本發明「矽化物」的表現爲使闬含本來的砂化物與 複矽化物的總稱. 經濟部中央標準局員工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁} ①的一部份（S i 5 % )，及0，③，④的組成範圍爲氮 化物系與炭化物系陶瓷的浸潤溶融融著. 以導電發熱體來說，可使用1的融著組成（Si^5%)，及 ②，③，④的組成範圍.特別是以②，③，®的組成範圍最 爲適當. ®，③，④的钽成爲對於上述電氣絕緣倥的氮化物系與 12 ___ 本紙張尺度適用中國國家標準（CNS ) A4规格（2丨0 X 297公釐） 經濟部中央標準局員工消費合作社印繁 444210 A7 ___B7____ 五、發明説明（β ) 炭化物系陶瓷有融著性，加上， 1.在線膨脹係數爲4〜8 x 10-6 (特別是③，④的組成範 爲4〜6 X 1 0-6)，因應需要，因調整微組織中矽化物的量 而能調整線膨脹係數，及能與基材的陶瓷整合，抑制在 .融著界面的熱應力使變極小，安定至高溫，對發熱體的 剝落防止極爲有效.又，③，®的組成範圍，因融點也低， 有能降低融著溫度的優點.旦矽化物爲高溫（約1 〇〇〇t以 上），軟化，就發熱體而言，雖有變形的缺點，但因融著 陶瓷可防止變形，且因於融著界面受到應力緩和之故， 缺點郜成爲有利的性質.即，以较化杨或含矽化物耝織 的金屬作爲髙溫使闬的加熟器爲目的，作爲融著陶瓷的 被膜極爲恰當. 2·於大氣φ及高溫下（1 〇〇〇 r以上），具優良的抗氧化性. 考憲到使m於大氣中及高溫下的場合，比起①的區 域，②，③，④的組成範圍更具優良的抗氧化性，且， 3.因阻抗大，可減少阻抗回路的長度，可得每單位面積 瓦特密度大的加熱器. 因以上的理由，以導電發熱體而言，相較於①的區 域，以0)，③，④的組成範圍·特別是③，④的組成範圍 爲佳. 因①的區域熱膨脹係數大且m抗小，爲了使熱應力 減小電阻增大，有必要削薄被膜的厚度.被膜厚度以低 於20μηι爲佳，最好低於I Ομηι以下.若融著膜超過2〇μηι 則易剝離. 13 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） " ' ----------^------’玎------^ (請先閲讀背面之注^項再填寫本頁) 444 2 10 經濟部中央標準局員工消費合作社印繁 A7 B7 五、發明説明（"） 上述的X-Si合金的X元素爲Cr、Mo、W、Fe、Μι ' Co、B、P及活性金屬 Pt、Pd、Rh、ir、Cu、Ag 及因 應目的而可選擇其他的矽化物形成元素等.又，這些元 素因應目的需要，亦可適當混合一種或二種來使用‘若 添加二種以上的元素，則有微組織矽化物的微細化效 果. 若添加量爲上述®，Φ形成微組織的範圍，即砂化物生 成範圍，形成矽化物興S i的範圍，則可適當選擇，担最 理想的範圍爲③的微組織範圍，即矽化物與S 1混合的組 成範圍.③的範圍因調整微組織中矽化物的量，而可適當 調整線膨脹係數及阻抗，旦因融點低，在低溫下亦可融 著陶瓷，此亦是有利之點. 由以上可知，在這些元素當中最爲理想的乃是活性金 屬. 又，除了上述元素之外，若不改變微組織範圍的話， 苏可添加其他元素.如因應目的需要，可適當添加固溶 於S 1使其阻抗下降的元素，或侵入矽化物中以改變砂 化物特性（阻抗，線膨脹係數，融點等）的元素. 於製造不純半導體上，爲製作P型半導體與N聖半導 體，通常在贵純度的S i上添力Π極微量（p p m〜p p b單位量） 的3價，5價的金龎以減泜阻抗，這對本發明面言序是有 效，相當於前者的場合.即，依於構成微組織一部份的 Si中，使含微量的3價，5價元素，其改變阻抗的方法對於 本發明的融著謨阻抗的調節法恧言苏有效.又，其他就 _ 14 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公嫠） 裝------訂------外 (請先閱讀背面之注項再填寫本頁) * 444210 A7 B7 五、發明説明（ 降低阻抗方法而言，使用含微量冗素（Fe、p、A1、c等） 的Si原料素材的鑄造用S丨原料亦有效又，於高純度J 原料添力峨的B、A1、？等3價，5價的原料或其他〒 素以調龍抗，當赫有效H p —起與㈣量固 溶亦可同時形成矽化物.Si and all solid solution elements, Mfe except Ge. Si can be silicide with most metals, if X is an element made of Si and silicide, due to the change of Si in X-Si alloy The basic changes in the microstructure such as φ if Si slowly increases will form the original silicide at a certain composition. This composition is treated as Si (l). In the area of Si < Si (l), it becomes X The matrix of the metal and the silicide phase of the X metal are mixed in the structure or the Si is more or less solid-dissolved in the X metal 1 1 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 444 2 1 〇 Α7 Β7 V. Invention It shows that the matrix of (?) Is mixed with the silicide phase of X gold tincture. © Moss is added by Si (1), and the silicide formed is gradually emerging. From the place where the composition of Si (2) exceeds It is a mixed eutectic of silicide and Si. Si is the most silicide-rich X element, and Si (2) is the most silicide-rich Si. In the region of Si (l) S Si i Si (2), this region is Mixed structure of one or more silicides. ③ Between Si (2) and less than Si (100%) Si (2) < Si < Si (100%) This area is a mixed structure of Si and silicide . ④ When Si = 100%, it becomes a polycrystalline weave of Si. Here, even if the 4th and 5th ... elements are added to the above-mentioned two-redundant system of x-si, the basic structure of such things is organized, That is, the basic structure of the silicide on the matrix will not change. That is, the 3rd, 4th, 5th _. And other elements are solid-dissolved into the matrix, solid-dissolved into silicides and complexed into silicides, or other compounds. Crystallization or separation into a matrix, at least the silicide (or complex silicide) will not be eliminated by the matrix. In addition, the "silicide" of the present invention is a general term for sands and complex silicides. The central standard of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperative (please read the precautions on the back before filling out this page) ① A part (S i 5%), and 0, ③, ④ The composition range is the infiltration of nitride-based and carbide-based ceramics Melting and melting. For a conductive heating element, a melting composition of 1 (Si ^ 5%) and a composition range of ②, ③, ④ can be used. In particular, the composition range of ②, ③, ® is most suitable. ®, ③, ④ Tantalum becomes a nitride system for the above-mentioned electrical insulation 倥 and 12 ___ this paper size In accordance with Chinese National Standard (CNS) A4 (2 丨 0 X 297 mm) Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, Yinfan 444210 A7 ___B7____ 5. Description of the Invention (β) Carbide-based ceramics have melting properties, plus, 1 The coefficient of linear expansion is 4 ~ 8 x 10-6 (especially ③, the composition range of ④ is 4 ~ 6 X 1 0-6), and the coefficient of linear expansion can be adjusted by adjusting the amount of silicide in the microstructure as needed. It can be integrated with the ceramics of the substrate to suppress the thermal stress at the fusion interface. It is extremely stable and stable to high temperatures. It is extremely effective in preventing the exfoliation of the heating element. Also, ③, the composition range of ® is also low because of the low melting point. It has the advantage of reducing the melting temperature. Once the silicide is at a high temperature (about 1000t or more), it softens. Although the heating element has the disadvantage of deformation, it can be prevented from being deformed by melting the ceramic. Because the melting interface is relieved by stress, the disadvantage is that it is a favorable property. That is, it is used as a heating device for the temperature increase of the tartar or silicide-containing metal as a heating device, and it is extremely useful as a coating for ceramics. Appropriate. 2. At atmospheric φ and high temperature (1000 Above), it has excellent oxidation resistance. According to the constitution, when m is in the air and at high temperature, compared with the area of ①, the composition range of ②, ③, and ④ is more excellent, and 3. Due to the large impedance, the length of the impedance loop can be reduced, and a heater with a high watt density per unit area can be obtained. For the above reasons, compared with the area of ①, the conductive heating element is 0), ③, ④ Composition range · Especially the composition range of ③ and ④ is better. Because the region ① has a large coefficient of thermal expansion and a small m resistance, it is necessary to reduce the thickness of the film in order to reduce the thermal stress and increase the resistance. The thickness of the film must be less than 20 μηι It is better to be below I Ομηι. If the fusion film exceeds 20μηι, it is easy to peel off. 13 This paper size applies the Chinese National Standard (CNS) Α4 specification (210 × 297 mm) " '------ ---- ^ ------ '玎 ------ ^ (Please read the note ^ on the back before filling this page) 444 2 10 Employee Consumer Cooperatives, Central Standard Bureau, Ministry of Economic Affairs, India A7 B7 5 &Description; The X element of the above-mentioned X-Si alloy is Cr, Mo, W, Fe, M ′ Co, B, P and active gold Pt, Pd, Rh, ir, Cu, Ag, and other silicide-forming elements can be selected according to the purpose. Also, these elements can be appropriately mixed with one or two kinds according to the purpose. 'If two or more kinds are added Element, it has the effect of miniaturizing the microstructure silicide. If the added amount is the above ®, the range of Φ formation microstructure, that is, the range of sand formation and the range of formation of silicide and Si, can be appropriately selected, and it is the most ideal. The range of the microstructure is ③, that is, the composition range of the silicide and S 1 mixture. The range of ③ can adjust the linear expansion coefficient and impedance appropriately because the amount of silicide in the microstructure is adjusted. Ceramics can also be melted at low temperatures, which is also an advantage. From the above, it can be seen that the most ideal of these elements is an active metal. In addition to the above elements, if the microstructure range is not changed, Su Ke Add other elements. If necessary according to the purpose, you can add elements that solidly dissolve in S 1 to reduce its resistance, or invade the silicide to change the characteristics of the sand (impedance, linear expansion coefficient, melting point, etc.). Element. For the manufacture of impure semiconductors, in order to make P-type semiconductors and N-semiconductors, Si is usually added to the precious Si with a very small amount of trivalent (ppm ~ ppb unit quantity). Impedance, which is effective for the face-to-face sequence of the present invention, is equivalent to the former case. That is, depending on the amount of trivalent and pentavalent elements contained in the Si constituting a part of the microstructure, the method of changing the impedance is to the present invention. The method of adjusting the impedance of the molybdenum is effective, and the others are _ 14 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 cm). (Please read the note on the back before filling this page) * 444210 A7 B7 V. Description of the invention (for the method of reducing impedance, the casting of Si raw materials containing trace amounts of redundant elements (Fe, p, A1, c, etc.) It is also effective to use S 丨 raw materials. Adding B, A1, and Lie to high-purity J raw materials? Equivalent to 3-valent, 5-valent raw materials or other halogens to adjust dragon resistance, when the effective H p-together with the amount of solid solution can also form silicide at the same time.

Si雖龙是阻抗極高之半導體，但园诈爲不純㈣微量 原元素，㈤顯地改善矽的導電性之故』本發明而言， 上述含有微置元素的si反而相當適當.又·有侵人矽办 物中以改變其砂化物特彳生（眼線膨脹係數，融_) 的好例爲侵入MoSi2之中（Μ〇Μ13)，形成s“複矽化物的 鋁的場合此場合MoSi2的融點δ 2〇6〇降爲〗8〇〇 t .Although Si is a semiconductor with extremely high resistance, it is an impure element that is a trace element, which significantly improves the conductivity of silicon. "In the present invention, the above-mentioned si containing micro-elements is quite suitable. A good example of the invasion of silicon substrates is to change the characteristics of their sandy compounds (eyeliner expansion coefficient, melting). This is the case of intrusion into MoSi2 (MOM13) to form "silicon" aluminum. The point δ 2600 is reduced to 〖800t.

Ge爲與Si同性質的元素，無法與si作成矽化物，因可 >Λ成有的比例作成全率固溶體，故可因應目的及甬途之 需要而適當添加.用以當作融點及阻抗的冗索亦有效. 活性金屬爲使陶瓷潤濕，捉進擴散的元素，本發明把 v、Nb、Ta、Ti、Zr、Hf、Υ、Mn、Ca、Mg、希 i類兀素及以活性金屬來表現. 經濟部中央標率局—工消費合作社印裝 --------威-- {請先閱讀背面之注意事項再填寫本頁} 若Si添加活性金屬，則明鑛地促進溼潤、且使溼·淘角 變小其結果削薄融著膜的厚度而能薄膜免，在增加阻 抗上有顯著的效果，且提昇融著強度- 對潤淫性旳改善两言，雖說從添加微置0.1%的程度就 0」看出效果，爲得到實用的效果最好添加0.5%以上.Ge is an element of the same nature as Si, and cannot be formed into silicide with si. Because it can be made into a full-rate solid solution, it can be appropriately added according to the purpose and the needs of the future. Point and impedance redundancies are also effective. Active metals are used to wet ceramics and capture diffused elements. In the present invention, v, Nb, Ta, Ti, Zr, Hf, erbium, Mn, Ca, Mg, and Greek metals are used. Expressed with active metals. Central Standards Bureau of the Ministry of Economic Affairs—printed by the Industrial and Consumer Cooperatives —---- Wei— {Please read the precautions on the back before filling this page} If Si is added with active metals, Then the open ore field promotes moistening and reduces the wet and scour angle. As a result, the thickness of the fused film can be reduced, which can reduce the thickness of the film. It has a significant effect on increasing the impedance and enhances the fused strength. Although it is 0 from the degree of adding 0.1%, it is best to add 0.5% or more in order to obtain a practical effect.

Si -活生金屬的二元合金場合，若活.性金屬的量增加， 則Si的量會相對地減少·若考慮到大氣中坑氧化性段場 15 本紙張尺度適用中國國家標準（CNS >从祕（210x297 f 444 2 1 0 A7 _______B7_ 五、發明説明（〇 ) 合，Si至少要3%以上，最佳爲添加③的範圍，即矽化 物範圍以上. 又，Si-Ti合金的場合，8 4%附近生成Ti3 Si組成的矽化物. 在Ti : 46%生成TiSi2的矽化物.若Ti未滿46%，即si 超過54%，則出現Tisi2與si的共晶.因此，①的區域爲 题域爲0.5%以上未滿46%的範圍.因此，若考慮到Si-Ti 二合金在大氣中抗氧化的場合，Ti的上限約Μ %·又，若 添加第3，第4…等元素，當然其上限値亦隨之改變.又， 當然亦可招si與Cr等之抗氧化.丨生付予元素互相置換. 於Si.與活性金屬共存的組合，一般西言，融著前述氮 化物，碳化物以外，及氧化物陶瓷，故能選擇氧化物陶 瓷爲基材. 氧化物陶瓷的種類，因應融著金屬的線膨脹係數，可 選擇適當的線膨脹係數而加以整合.可由線膨脹係數約 爲3〜9 X 1 0-6範圍的氧化物中選擇適當的種類_ 經濟部中央標隼局員工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) 使用氧化鋁系，氧化銷系，氧化鉻系等爲基材時（融 著金屬的組成以②的矽化物組成爲最佳.因砂化物的線 膨脹係數約分佈於5〜9 xlO-6的範圍，故可由其cp選擇與 基材陶瓷近似的東西，及計畫線膨脹係數的整合. 於融著層，主要是由於陧抗等的調整，因應需要，可 於融著材料上適當混合不溶解的陶瓷發熱體（SiC，Zr02等） 或其他絕緣陶瓷粉末，纖維，或對融著金屬有難溶解性 的，鋁高融點矽化物，题化物等金屬間化合物發熱體的 16 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） t 444 2 1 Ο A7 _ B7 五、發明説明（Λ ) 粉末，纖維，或高融點金屬粉未，纖維等.或是亦可祀融 著材料當作粘合劑，結合這些發熱體的粉末，纖維，並 同時融著於陶瓷基材. 融著材料亦可作焊接材料；可將陶瓷基材與陶瓷，金 脣，金肩化合物發熱阻抗體的箔，板，線接合來使用. 妬使用金屬箔時，挾著W、Mo等的金屬箔於二枚陶瓷， 若以全面的銲材包裹而力Π以銲接，則可同時解決W、Mo 的抗氧化性問題· 融著於陶瓷基材融著膜的厚度越薄越好.因若越薄則 阻抗變大之故，有使發熱回路縮短的镊點.又，因融著 界面的熟應力變小t故可高溫，長時間使用.融著膜的 厚度大致以數μι^500μπι的範圍爲佳· 本發明的阻抗發熱膜可適用於一枚陶瓷基材的單面而 融著的單面融著型，或於二枚陶瓷之間挾著雙面陶瓷而 融著的雙面融著型· 對雙面融著型而言，在回路與回路的空隙中，會有溶 融金屬滲透及短路的情況發生. 經濟部中央標準局員工消費合作社印策 I I [ ^ (請先閲讀背面之注意事項再填寫本頁) 針對犹問題，回路與叵路之閭若将二枚陶瓷之空隙隔 開，使其大於融著金屬膜的厚度·則有防止短路的效 果· 具體而言，於融著前在固路與回路之間，可預先形成 溝槽，再重合，融著即可. 阻抗發熱膜的融著爲將按所定組成分調整的金屬箔塗 著於陶瓷融著面或貼著於囡路模型· Μ如以加熱，溶酿， 17 本紙張尺度適用中國國家標準（CNS > Α4規格（210x297公釐） 經濟部中央標準局員工消費合作社印製 444 2 1 Ο Α7 Β7 五、發明説明（5 ) 融著.又，亦可於融著面以溶射、噴射、PVD、CVD等方 法預先成膜融著金屬的膜s使其可加熱，溶融.融著. 又，可預先成膜一部份的成分·其储的元素則塗著粉末， 站著金屬箔而溶融，融著.融著時的氣氛以真空，還原， 不活性爲佳 於阻抗發熱膜融著於陶瓷基材單面的單靣融著型與挾 著二枚陶瓷而融著的雙面融著型方面，就阻抗發熱膜厚 度的均一性，平坦性（及均一融著性而言，以雙面融著 型爲佳. 又，於單面融著型方面，若陶瓷基材與阻抗發熱膜的線 膨脹係數不同時，會發生融著後之陶瓷有些變形.另外， 若將線膨脹係數相同或近似的二枚陶瓷挾著而融著時， 其特徵爲郞使阻抗發熱膜與陶瓷基材的線膨脹係數有些 不同，亦不會發生融著後之陶瓷變形或加熱時變骹，若 就均一加熱及溫度分布均一性的觀點而言，以雙面融著 構造的爲佳. 又，因雙面融著構造其發熱回路外之露m部份僅相當 於融著膜的厚度，故對於酎觸及抗氧化μ言爲極適當之 構造.而且.相當於融著膜厚度的露出部份可由外部， 以溶膠-凝膠法覆蓋陶瓷膜，以無機接著劑塡補空隙，用 玻璃邡以封著，或以融著金屬將陶瓷基材周圍加以封土 來保護. 融著溫度至少爲融液出現的溫度，即必須達到固相線 以上的溫度，最佳爲液相溫度以上. _18_ 本紙張尺度適用中國國家標準（CNS ) Α4規格（2[0Χ297公釐） --------d------IT------^ (請先閲讀背面之注意事項再填寫本頁) 444210 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（4 ) 若以融著金屬的Si原料而言，可適當地選擇使闬從4 導體用的S 1到在金屬鑄物上甩於成份調整的S i . 於禱物运途上，含F e、C、P、A 1寺之徽量兀素，因 lit等微量元素可提昇Si旳導電注.故對本發明相當有效 又，添加當作半導體使甩的不純物的SH:P型生導體.N 型半導體）亦it本發明相當有效. 圖靣說明 圖係本發明的單面融著構造實施形態的說明圍. Si係說明於管狀的陶瓷基材表面全靣上，融著矽化物， 矽化物+S 1 t或S i膜的構造.圖2係說明於陶瓷圓棒之螺 旋狀物上，融著矽化物，矽化物+Si ,或S!膜的構造. 圖3係說明於板狀的陶瓷基材上，使融著成回路模型的 構造. 如圖1，1係由氮化鋁，氮化矽素，氧化鋁，氧化鉻等 之陶瓷管所形成之基材.2係融著於基材的矽化物，矽化 物十S 1，或S 1的融著層. 融著看的兩端洚以機械的或冶金的手段與連結外部電 源的導體相連接. 圖2係於圓棒的基材上形成螺旋狀的融著謨之例.而 圖3係於板狀基材上形成配線匣路模型的融著膜之例. 以上這些模型的形成.可用融著金屬的粉末塗布於模型 狀而融著的方法，亦可暫時垴形成全面的融著膜，藉由 老化及鼓風等之涂去in二去除不要之部汾西b成m要之 19 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0 X 297公釐） I-------Ί------1T------i (請先閲讀背面之注意事項再填寫本頁) 444210 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（d ) 模型. ® 5~ 1 6係說明本發明的雙面融著構造;乙實施形態，圖 5係表示融著金屬的邡熱回路之一例，其實際之構造係 將如熱Ξ路挾於二坆陶瓷基材而融著於陶瓷雙面的構· 造. 圖6係龀加熱回路挾於二枚陶瓷基材的搆造之A-A斷面 圖.圖7係表示圖6之構造的製造工程之一例.圖S係說 明防止加熱回路短路之構造. 如圖6 ,融著金屬的加熱回路3係挟於二枚的陶瓷基材 4，5之間而融著，當融著金屣爲加熱回路時，其苏玢演 接合二坆陶瓷之焊材的角色. 以下係回路形成的方法： ①於二枚陶瓷的一面或雙面，在回路模型上塗布調整過 之融著金屬組成的金屬粉末，重合二枚的陶瓷砬加熱， 溶解而加以融著，或 ®於二枚陶瓷的一面或雙面上，將融著金靥膜覆蓋於回 路模型，重合二枚的陶瓷竝抝熱，溶解而加以_著.融 著金屬膜係以噴射、PVD、CVD等方法形成. 3係Φ與®的折衷方法，卸使芾成膜與粉末塗布的雙面， 描繪回路模型，力0熱，溶解而抝以融著.或s ④於各啕瓷的接合靣預先使金屬融著並夥成融著膜，此 膜以珠粒噴擊等方法除去加工而形成回路模型.將被彩 成的二枚模型位置對好，重合，加熱，再溶融而接合二 20 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0 X 297公釐） —I— I - —^1 ^^1 1 --11 —^^1 I— i—- (請先閱讀背面之注意事項再填寫本頁) Α7 Β7 444 2 1 Ο 五、發明説明（,i?) 枚陶瓷. 如圖1_7，於各陶瓷的接合面預先將金屬融著而形成融 著膜，此膜亦可使m在以珠粒噴擊及荖化等方法除去加 工而喪成回路模型後，重合，抝熱（視需要加壓力π熱）， 於融點以下的溫度燒結的方法. 如圖6，7的構造，在二枚陶瓷挾著加熱回路的構造裡， 將融著金屬橫间浸透時.會發生回路短路的情形.若金 屬膜越厚越容易造成短路. 對於短路的情形，如圖S所示，可於回路與回路間之 空隙影成溝7,並使陶瓷板之空隙如寛. 將二枚陶瓷挟著加熱回路而融著時，二枚陶瓷之間留 下相當於融著金屬的加熱回路的厚度般的空隙. 若有空隙，依用途而發生異物混入，造成固路短路. 錯面空隙的封止上苏形成重要的問題. 端面封止係將陶瓷端面的周圍如圖9，以融著金屬帶 包圍形成封閉回路S，藉由使此封閉回路8融著於陶瓷的 雙靣，赤是有效的封土方法. 融著封止封閱回路S满與·融著力Π熱回路同時進行，力G 熱回路的融著金屬可融著相同的金_ .或使吊與加熱回 路的融著金屬相同條俘的可融著枋料. 又，就其他的封止方法而言，可含浸，固化陶瓷接著 劑，或融著玻璃.In the case of a binary alloy of Si-living metal, if the amount of active metal increases, the amount of Si will be relatively reduced. If the pit oxidizing segment field in the atmosphere is taken into account 15 Chinese paper standards (CNS & gt From the secret (210x297 f 444 2 1 0 A7 _______B7_ V. Description of the invention (Si), Si must be at least 3%, and the most preferred is the range of addition ③, that is above the silicide range. In addition, the occasion of Si-Ti alloy A silicide of Ti3 Si is formed near 84%. A silicide of TiSi2 is formed at Ti: 46%. If Ti is less than 46%, that is, si exceeds 54%, a eutectic of Tisi2 and si appears. Therefore, ① The area is the range of 0.5% to 46%. Therefore, if the oxidation resistance of the Si-Ti secondary alloy in the atmosphere is considered, the upper limit of Ti is about M%. Moreover, if the third, fourth ... And other elements, of course, its upper limit 値 also changes accordingly. And, of course, it can also recruit si and Cr and other antioxidants. 丨 raw and paid elements exchange with each other. In Si. The combination of coexistence with active metals, generally speaking, fusion The aforementioned nitrides, carbides, and oxide ceramics, so oxide ceramics can be selected as the substrate. Oxide ceramics Kinds can be integrated according to the linear expansion coefficient of the molten metal, and an appropriate linear expansion coefficient can be selected and integrated. The appropriate type can be selected from oxides with a linear expansion coefficient of about 3 to 9 X 1 0-6 _ Ministry of Economy Central Standard Printed by the SAE Consumer Cooperative (please read the precautions on the back before filling out this page) When using alumina, oxidized pins, chrome oxide, etc. as the base material (The composition of the fused metal is the silicide composition of ② as The best. Because the linear expansion coefficient of the sandy material is distributed in the range of 5 ~ 9 xlO-6, the cp can choose something similar to the substrate ceramic and plan the integration of the linear expansion coefficient. In the fusion layer, the main Due to the adjustment of resistance, etc., it is possible to properly mix insoluble ceramic heating elements (SiC, Zr02, etc.) or other insulating ceramic powders, fibers, or hardly soluble metals, such as aluminum. 16 paper sizes of high melting point silicides, interfering compounds, and other intermetallic compound heating elements. Applicable to China National Standard (CNS) A4 (210X297 mm) t 444 2 1 〇 A7 _ B7 V. Description of the invention (Λ) Powder, fiber Or high melting point metal powder, fiber, etc. Or you can melt the material as a binder, combine the powder and fiber of these heating elements, and melt on the ceramic substrate at the same time. The melted material can also be used for welding. Material; ceramic substrate and ceramic, gold lip, gold shoulder compound heating resistor foil, plate, wire bonding can be used. When using metal foil, hold metal foils such as W and Mo on two ceramics, if Wrapped in a comprehensive welding material and welded together can solve the oxidation resistance of W and Mo at the same time. The thinner the thickness of the film fused to the ceramic substrate, the better. Because the thinner the resistance, the larger the resistance. Therefore, there are tweezers points for shortening the heating circuit. In addition, since the ripening stress of the fusion interface is reduced, it can be used at high temperatures for a long time. The thickness of the fusion film is preferably in the range of several μιη 500 μπι. The resistance heating film can be applied to a single-sided fusion type with one side of a ceramic substrate, or a double-sided fusion type with two-sided ceramics fused between two ceramics. In terms of shape, in the gap between the circuit and the circuit, molten metal penetrates and short circuit occurs. Health. Policy II of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs [^ (Please read the precautions on the back before filling out this page) To solve the problem, if the circuit and the path of Kushiro separate the gap between the two ceramics, make it If the thickness is greater than the thickness of the fused metal film, it has the effect of preventing short circuit. Specifically, before the fused circuit, a groove can be formed in advance between the fixed circuit and the circuit, and then it can be overlapped and fused. In order to apply the metal foil adjusted to the predetermined composition on the ceramic fusion surface or on the Kushiro model · If heating and melting, 17 paper sizes are applicable to Chinese national standards (CNS > Α4 size (210x297) (Mm) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 444 2 1 〇 Α7 Β7 V. Description of the invention (5) Fusion. In addition, it can also be pre-formed on the fusion surface by dissolution, spraying, PVD, CVD, etc. The metal film s can be heated, melted, and fused. In addition, some of the components that can be formed in advance can be coated with powder, and the metal foil is standing and melted and fused. When fused Atmosphere with vacuum, reduction, inactivity is better than impedance With respect to the single-sided fusion type in which the thermal film is fused on one side of the ceramic substrate and the double-sided fusion type in which two ceramics are fused, the uniformity and flatness of the thickness of the resistance heating film (and uniform fusion) In terms of double-sided fusion type, and in the single-sided fusion type, if the linear expansion coefficient of the ceramic substrate and the resistance heating film is different, some deformation of the ceramic after fusion occurs. In addition, if When two ceramics with the same or similar linear expansion coefficient are fused and fused, the characteristic is that the linear expansion coefficient of the resistance heating film and the ceramic substrate are slightly different, and no deformation or heating of the ceramic after fused occurs. However, from the viewpoint of uniform heating and temperature distribution uniformity, it is better to use a double-sided fusion structure. Also, the double-sided fusion structure only exposes the m part of the heating circuit, which is equivalent to the fusion film. Thickness, it is a very suitable structure for contacting oxidation resistance μ. Moreover, the exposed part corresponding to the thickness of the melted film can be covered by a sol-gel method from the outside, and the gap is filled with an inorganic adhesive. Seal with glass or seal with molten metal Sealing soil is used to protect the porcelain substrate. The melting temperature is at least the temperature at which the melt appears, that is, the temperature above the solid phase line, and the temperature above the liquid phase is the best. _18_ This paper size applies Chinese National Standard (CNS) Α4 Specifications (2 [0 × 297mm) -------- d ------ IT ------ ^ (Please read the precautions on the back before filling this page) 444210 A7 B7 Central Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Bureau of Standards V. Description of the invention (4) In the case of Si material with metal melting, it is possible to appropriately select 闬 from S 1 for 4 conductors to S for metal adjustment on the composition adjustment i. On the way of prayer, containing Fe, C, P, and A 1 temple elements, because trace elements such as lit can improve the conductivity of Si 旳. Therefore, it is quite effective for the present invention. Impurities of SH: P-type bioconductors. N-type semiconductors) are also very effective in the present invention. Figure 靣 The illustration is a description of the single-sided fusion structure embodiment of the present invention. The Si system is described on the surface of a tubular ceramic substrate On the whole surface, the structure of silicide, silicide + S 1 t or Si film is illustrated. Figure 2 illustrates the screw of ceramic round rod On the object, the structure of the silicide, silicide + Si, or S! Film is shown. Figure 3 illustrates the structure of a plate-shaped ceramic substrate, which fuses into a circuit model. As shown in Figure 1, 1 Substrate formed by ceramic tubes such as aluminum nitride, silicon nitride, aluminum oxide, chromium oxide, etc. 2 is a silicide fused to the substrate, silicide ten S 1, or an adhesion layer of S 1. The two ends of the watch are connected mechanically or metallurgically to the conductor connected to the external power source. Figure 2 is an example of a fused spiral formed on the base of a round rod. Figure 3 is a plate-shaped base. An example of a fusion film forming a wiring box circuit model on a material. The formation of these models can be coated with a metal powder on a mold and fused, or it can be temporarily formed into a comprehensive fused film by aging. And blasts, etc., in the second part, the unnecessary part, the fenxi b, and the required 19, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0 X 297 mm) I ------- Ί ------ 1T ------ i (Please read the notes on the back before filling out this page) 444210 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description d) Model. ® 5 ~ 16 series illustrate the double-sided fusion structure of the present invention; Embodiment B, Fig. 5 shows an example of a metal-clad thermal circuit. The actual structure will be like the thermal circuit. The structure and construction of two ceramic substrates fused on both sides of the ceramic. Figure 6 AA cross-sectional view of the structure of a heating circuit and two ceramic substrates. Figure 7 shows the manufacturing process of the structure of Figure 6. An example. Figure S illustrates the structure to prevent the short circuit of the heating circuit. As shown in Figure 6, the heating circuit 3 fused with metal is fused between two ceramic substrates 4, 5 and it is heated when fused with metal. During the circuit, Su plays the role of a welding material that joins the two ceramics. The following is the method of forming the circuit: ①Apply the adjusted metal powder on the circuit model to one or both sides of the circuit. , The two ceramics that are superposed are heated, dissolved and melted, or ® is on one or both sides of the two ceramics, and the molten gold film is covered on the circuit model. The two ceramics that are superimposed are heated and dissolved. _ 着. Melting metal film is formed by spraying, PVD, CVD, etc. 3 series of Φ and ® The method is to remove the double-sided film and powder coating on both sides, and draw a circuit model. The force is 0 heat, dissolved and melted, or s. ④ At the joint of each porcelain, the metal is melted and melted in advance. The film is formed by removing the processing by bead spraying and other methods to form a loop model. The two models that have been colored are aligned, overlapped, heated, and re-melted to join the two 20 paper standards applicable to Chinese National Standards (CNS) A4 specifications (2 丨 0 X 297 mm) —I— I-— ^ 1 ^^ 1 1 --11 — ^^ 1 I— i—- (Please read the precautions on the back before filling this page) Α7 Β7 444 2 1 〇 5. Description of the invention (, i?) Ceramics. As shown in Figure 1_7, the metal is pre-melted on the joint surface of each ceramic to form a fusion film. This film can also make m Methods such as incubation remove the processing and form a circuit model, and then overlap, heat up (press π heat if necessary), and sinter at a temperature below the melting point. The structure shown in Figures 6 and 7 is held on two ceramics. In the structure of the heating circuit, when the molten metal is penetrated across the circuit, a circuit short circuit may occur. The thicker the metal film, the more likely it is to cause short circuits. In the case of a short circuit, as shown in Figure S, a gap 7 can be formed in the gap between the circuit and the circuit, and the gap of the ceramic plate is like a 寛. When two ceramics are held by the heating circuit and fused, two Ceramics are left with a thickness equivalent to the thickness of the heating circuit in which the metal is melted. If there is a gap, foreign matter may mix in depending on the application, causing a short circuit in the solid circuit. Sealing the upper surface of the interstitial gap forms an important problem. The stop system surrounds the end face of the ceramic as shown in FIG. 9 to form a closed circuit S surrounded by a metal band. By making this closed circuit 8 fused to the ceramic double ring, red is an effective method of sealing soil. The full circuit S and the fusion force Π thermal circuit are performed at the same time, and the fusion metal of the force G thermal circuit can be fused with the same gold _. Or the fusion metal of the suspension metal and the heating circuit can be fused with the same material. As far as other sealing methods are concerned, it can be impregnated, cured ceramic adhesive, or melted glass.

[圖9的說钥] _21_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) —II I - - - i n n^i - < 士ί/ I- - - - 11 X» -W3 、τ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 444 2 1 Ο Α7 Β7____ 五、發明説明（β ) 圖9係表示，於二枚陶瓷旳一面或雙面的加熱回路龄 成面上，將加熱回路的融著金屬如圖般塗著，同時，在 金屬封閉回路&上，塗著與加熱回路的融著金屬可融著 相同的金屬，或使用與5G熱叵路的屘著金屬相同條件的 可融著材料，重合逆同時加熱，融著的構造.因加熱画 路與封閉回路8被掩蓋於陶瓷中，無法由表面看出，故 以虛線表示.加熱回路與封閉回路係互相絕緣. 加熱回路的末端與外部電源的連接係如以下有效之連 接構造.①所使用的陶瓷基材係與線膨脹係數近似的金 屬端子焊接，該金屬端子係連接於導線.圖1 〇Π之構 々比 S. * 經濟部中央標率局員工消費合作社印裝 1^1 m ^^1 nf ^^1 n ^^1 (請先聞讀背面之注意事項再填寫本頁) 圖10係回路未端直接與金屬端子焊接之構造，圖11係 回路末端拉至陶瓷基材的外表面而加以焊接之構造.即， 於陶瓷基材的一邊穿兩個孔（單相場台）及三個孔（三相 場合）作回路拉出用，沿著孔內鍍上融著金屬，將回路 拉至外面，於拉出之處加以焊接.亦可將與拉m用的孔 的線膨脹係數近似的金屬（Mo、W等）導線直接***，導 線與孔旳空隙可以焊材塡入，直接與回路末端焊接.或 將孔改爲細孔徑並塡入融著金屬，焊接上導線而與外部 導通. 單面融著構造係於回路末端，將陶瓷基材與線膨脹係 數近似的帶狀金屬端子焊接，亦可將帶狀端子與外部導 線以電氣方式連接.又，如圖i 2 ,可事先將陶瓷小片9 接合於SC熱回路上面，將導線9***4、片9的孔，並加以 ___22 本紙張尺度適用中國國家標準（CNS ) 規格（210X297公釐) ^ 444 2 1 Ο A7 B7 五、發明説明（) 焊接固定. 焊接係使用融著金屬而形成回路時，可同時將端子焊 接. 或於g路形成後，抗氧化性佳的高溫焊，如使用Ni焊等 加以焊接. 若陶瓷基材係氮化銘系陶瓷，氮化较素系陶瓷，碳化 矽素系陶瓷時，端子材料以於Mo、W、或氮化鋁系陶瓷， 氮化矽素系陶瓷，碳化矽素系陶瓷的多孔體含浸融著金 屬而作成的複合材料等的端子亦可金屬端子與導綠， 除了中實材料，亦可適當地選用綁線，重疊箔，或織布 狀等物. 以下說明有關本發明的靜電夾具 本發明的加熱機構係使用絕緣的，於線膨脹係數相同 的或近似的二枚陶瓷基紂之間，挾著對陶瓷有融著性的 電熱材料的膜，並加以溶融融著的構造的陶瓷加熱器所 恶成. 作爲溶融融著的電熱合金以Si基合金爲佳· 經濟部中央標準局員工消費合作社印裝 n —^ϋ ^^^1 _ - ^^1 ^^^1 *又 ^^1 二 i ^^1 TJT (請先閲讀背面之注意事項再嗔寫本頁) 作s i與全部固溶體的元素除Ge之外，s 1幾乎可舆所有 的金屬作成矽化物. 假設\爲〗1與矽化物所作成的元素，則因x-s!合金的 S 1的變化而導致微組織基本的變化，如以下·所示： ①當S 1漸漸增加時，於某組成之處形成最初的矽化物. 將此組成當作S 1 ( 1 ),在s i <S i ( 1 )的區域裡，係X金屬的 23 本紙張尺度適用中國國家標準（CNS > A4規格（210 X 297公釐） 444 2 1 Ο Α7 ____Β7 五、發明説明（rl ) 矩陣與X金屬的矽化物相之混在組織，或S i多少固溶的 X金阑的矩陣與X金屬的矽化物相之混在組織所形成. ② 若由S i ( 1 )進一步增加S 1，則組成的矽化物會依序的 出現，由超過某組成S i ( 2 )之處，矽化物與S 1的混在的 共晶會出現.S i ( 1 )係X元素的最豐富的矽化物，S i ( 2 ) 係S 1的最豐富的矽化物.S i ( 1 ) sS 1 iS 1 ( 2 )的區域裡，此 區域係一種或二種以上矽化物的混在組織. ③ 在大於S】（2 )小於S i ( 1 〇〇%)之間 St(2)<Si<Si(100%) 此區域係S i與矽化物的混在組織. ⑨S i = 1 00%時，係形成s i的多結晶組織. 此處，上述X-Si的二元系中，即使添加第3，第4,第 5 ...等元素，組織本身的基本架構，亦即矽化物存在於 矩陣中的這種架構不變.亦卸第3 ,第4 ,第5 ...等元素 固溶於矩陣，或固溶於矽化物而形成複矽化物，或形成 其他的化合物並晶出或析出於矩陣，至少矽化物 < 或複 矽化物）不會自矩陣中消失. 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 又，本發明所使甩的「矽化物」的表現，本來就包含矽 化物與複矽化物的總稱. 以電熱合金而言，②，③的組成範圍，尤其是以3的組成 範圍最適當. 以陶瓷基材而言，在③的組成範圍中，以氮化鋁系及 氮化矽素系陶瓷爲最適當，尤其是以氮化鋁系陶瓷爲鳗 適當·在®的組成範圍中，以氧化鋁系陶瓷爲最適當. 24 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐） f 444 2 1 Ο A7 B7 五、發明説明（，） 因©的S 1里體組織的阻抗過大，並不適合作電熱合 金. ®的組或係對氮化鋁系陶瓷有融著性，再加上線膨脹 係數爲4~7 X 1(TS，因藉調整矽化物的置，可將線膨脹係 數與氮化鋁系陶瓷整合，因此，可使融著界面的熱應力 變爲極小，融著膜可於高溫下安定使用.又因融點也低. 具有可降低融著溫度的優點.又，藉由調整矩陣中的矽 化钧的量，亦可調整阻抗. ②的組成係由於線膨脹係數爲7~S X ICT6,使與氧化鋁 陶瓷基材的線膨脹係數近似，故可使芾氧化鋁系的陶瓷 作基材. ②，③兩者在大氣中及高溫< 1 000 °c以上）下均有良好的 抗氧化性. Φ兩者，尤其是③，因其脰抗大，可縮短阻抗回路 的長度，故可得到每單位面稹的瓦特密度大的加熱器， 以電熱合金而言，選擇②，③，尤其是③係基於以上的 理由. 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁} 以融著電熱合金的基材商言，之所以選擇氮化鋁系， 氮化矽素系，氧化鋁系，乃是基於Ο)，0)各線膨脹係數與 氧化鋁，氮化鋁，氮化矽素近似，而可使融著界面的熱 應力變爲極小之故， 以上述_S!-X合金的X元素而言，可侥目的選擇適當 的Cr、Mo、W ' Fe、Ni、Co、B、P等活惶金屬，及 其他矽化物髟成的元素等·又，這些元素可依目的，適 25 本紙張尺度適用中國國家榇準（CNS ) A4規格（210X297公釐） 444 2 1 Ο Α7 87 五、發明説明（/) 當的混合一種或二種以上的元素來使甩. 這些金屬之中，特別是以活性金屬爲佳. 活性金藹係針對陶瓷，促進潤Μ，擴散的元素，本發 明係以 V、Nb、Ta ' Τι 、Zr、Hf、1 ' Μη、Ca - Mg、 希土類元素及鋁等，作爲活性金屬來表現. 若於Si中添加活倥金驕，則可顯著地促進潤濕，且使 潤濕角變小.結果，可使融著的融著膜平滑化，平坦化 及薄膜化，並可得到均一且阻抗大的被膜，提昇融著強 度· 潤濕姓的改善，雖由添加0 . 1 %程度約微量即可看岀效 果，爲得到寅用上的效果，最好添加0.5$以上. 在Si_X合金裡t}(爲Τι時，®的區域爲：0%<Ti<4 6%, 0 趵區域爲：46¾ (TiSi〇i-Tis75% (TisSu). ©的區域的矽化麴爲：TiSn,係Si+TiSu的微組織. X爲Zr時，③的區域爲：0%<Ti<40%s ②的區域爲：40¾ (ZrS")i:Tis93% (ZpSi) 3的區域的砂化物爲：Z r S i 2 , ·係S i + Z r S 1 ;的微經織. 經濟部中央標準局員工消f合作社印裝 1· I «^^1 m. —^1· ^^^1 1^1 β 4 ^^^1 ^^^1 ^^^1 ^^^1 ^^^1 1^1 J3. Tfl (請先閱讀背面之注意事項再填寫本頁) 最哇的範圍係，於Si - Τι合金，Ti : 10〜25%、於Si - Zr 合金，Zr:10〜30%.又.任何一個皆是重量％. 太發玥的靜電夾具的吸著機構部底面，係與上述陶瓷 抝熱器接合爲一體，可將吸著的半導體基板等被處理物 快速地加熱.又，藉由加熱機構的底面更進一步的與冷 卻機構接合爲一體，亦附加冷卻機能，因加熱、冷部的 餌吊，可精密的控制溫度. 26 本紙張尺度適用中國國家標準（CNS ) A4規格（2I〇X 297公釐） f 444 2 1 Ο A7 B7 體的結合 五、發明説明（珙 將靜電吸著機構與加熱機構、冷卻饑擒結合爲—體時， 冷郤機構-加熱機構，靜電吸著機構的噸陳= … ‘ 爲必要條件. 當順序相反，即加熱機構-冷部機擒.靜電吸著機構時 於加熱機構與靜電吸著機構之間加\冷卻機構^會使冷 卻機構冷媒循環路的空隙部份形成斬熟騎，由於=熱機 構阻止對靜電吸著機構的熱移動，基板加熱時會造成 昇溫速度變慢的問題·即，在實際的颳埋上t由於您溫 —高溫、高溫—低溫的溫度變化時間/系充全的時間損失 此時間損失將導致生產性的降低·由於順序相反_加熱 時的時間損失變大，導致生產性明顯的降低， 靜電吸著機構、如熱機構、冷卻馈構的「 的表現如以下所含的意思： © 冶金接合的結合 相當於靜電唆著機構與陶瓷邡熱器、冷卻機構焊接 的場合. @ 膜的積層的結合 藉由溶射、PVD、CVD、噴射等的成膜處理，使積屬 膜逆緊密地與基材結合的場合.具體上.相當於藉囱在 誘電體陶瓷上成膜而形成的場合.即，於陶瓷加熱器上-使電極金屬形成膜，在&之上，誘電體陶瓷更進一步形 成膜的場合，或於陶瓷力Π熱器上接合電極金屬板，並於 此板上，使誘電體陶瓷上形成膜的場合. ® 燒結或燒成的結合 金屬-金屬係冶金接合的領域，衙金屬-陶瓷 '陶瓷- 27 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ! I— I , n H 訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印装 444 2 1 Ο Α7 Β7 五、發明説明（A ) 陶瓷的組合係不屬於冶金接合領域的燒結或燒成的結 合.[Speaking key of Figure 9] _21_ This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) —II I---inn ^ i-< 士 ί / I----11 X »-W3 , Τ (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 444 2 1 〇 Α7 Β7 ____ 5. Description of the invention (β) Figure 9 shows that one ceramic or one ceramic On both sides of the heating circuit, coat the fused metal of the heating circuit as shown in the figure. At the same time, on the metal closed circuit &, apply the same metal as the fused metal of the heating circuit, or It uses the same fusing material as the 5G hot-rolled metal. It is superimposed and simultaneously heated and melted. The heating circuit and the closed circuit 8 are covered in ceramics, which cannot be seen from the surface. The dotted line indicates that the heating circuit and the closed circuit are insulated from each other. The connection between the end of the heating circuit and the external power supply is as follows. ① The ceramic substrate used is welded to a metal terminal with a similar linear expansion coefficient. The metal terminal It is connected to the wire. Figure 1 Structure of Π S. * Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 1 ^ 1 m ^^ 1 nf ^^ 1 n ^^ 1 (Please read the precautions on the back before filling out this page) Figure 10 It is a structure in which the end of the circuit is directly welded to the metal terminal. Figure 11 is a structure in which the end of the circuit is pulled to the outer surface of the ceramic substrate and welded. That is, two holes (single-phase field stage) and three Each hole (three-phase occasion) is used for drawing the circuit. The metal is plated with molten metal along the hole, and the circuit is pulled to the outside, and welded at the place where it is pulled out. The coefficient of linear expansion of the hole for drawing m can also be used. Similar metal (Mo, W, etc.) wires are directly inserted, and the gap between the wires and holes can be penetrated by welding material and directly welded to the end of the circuit. Or the hole is changed to a small diameter and inserted into the molten metal, and the wire is welded to the outside Continuity. The single-sided fusion structure is tied to the end of the circuit. The ceramic substrate is welded to a strip-shaped metal terminal with a similar linear expansion coefficient. The strip-shaped terminal can also be electrically connected to the external conductor. Also, as shown in Figure i 2, Bond the small ceramic piece 9 to the SC thermal circuit in advance, insert the wire 9 into the Holes and ___22 This paper size applies the Chinese National Standard (CNS) specifications (210X297 mm) ^ 444 2 1 〇 A7 B7 V. Description of the invention () Welding and fixing. Welding system can be used when forming a circuit with molten metal. At the same time, solder the terminals. Or after the g-channel is formed, high temperature soldering with good oxidation resistance, such as Ni welding, etc. If the ceramic substrate is nitrided ceramic, nitrided ceramic, silicon carbide In the case of ceramics, terminals such as Mo, W, or aluminum nitride-based ceramics, silicon nitride-based ceramics, and silicon carbide-based ceramics are impregnated with a composite material made by impregnating a metal with a porous material. Green guide, in addition to solid materials, you can also choose tie wire, overlapping foil, or woven fabrics. The following describes the electrostatic fixture of the present invention. The heating mechanism of the present invention is insulated and has the same linear expansion coefficient. Or between two ceramic substrates, a ceramic heater with a melting ceramic film is melted, and a ceramic heater with a molten structure is formed. The molten electrothermal alloy is Si-based. Better alloy Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs n — ^ ϋ ^^^ 1 _-^^ 1 ^^^ 1 * Again ^^ 1 Two i ^^ 1 TJT (Please read the notes on the back before copying Page) Si and all solid solution elements except Ge, s 1 can be used as silicide for almost all metals. Assume that \ 1 is an element made with silicide, because of S 1 of xs! Alloy The change results in the basic changes in the microstructure, as shown below: ① When S 1 gradually increases, an initial silicide is formed at a certain composition. Consider this composition as S 1 (1), and at si < S In the area of i (1), 23 paper sizes of X metal are applicable to Chinese national standards (CNS > A4 size (210 X 297 mm)) 444 2 1 〇 Α7 ____ Β7 V. Description of the invention (rl) Matrix and X metal The silicide phase is mixed in the structure, or the solid solution of the Si gold matrix and the X metal silicide phase is formed in the structure. ② If Si is further increased by S 1 (1), the composition is silicified. Substances will appear in order. From the point that exceeds a certain composition S i (2), the mixed eutectic of silicide and S 1 will appear. S i (1) is the most abundant element of X. Si (2) is the most abundant silicide of S 1. In the area of S i (1) sS 1 iS 1 (2), this area is a mixed tissue of one or more silicides. ③ Between S> (2) and S i (100%), St (2) < Si < Si (100%) This region is a mixed structure of S i and silicide. ⑨S i = 100% This system forms a polycrystalline structure of si. Here, in the above binary system of X-Si, even if elements 3, 4, 5, ... are added, the basic structure of the structure itself, that is, the silicide is present in This structure in the matrix is unchanged. The third, fourth, fifth, and other elements are also dissolved in the matrix, or dissolved in the silicide to form a complex silicide, or to form other compounds and crystallize or As a result of the matrix, at least silicide < or complex silicide) will not disappear from the matrix. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). The performance of "silicide" was originally a general term that includes silicide and complex silicide. For electrothermal alloys, the composition range of ② and ③, especially the composition of 3. The range is the most appropriate. For ceramic substrates, in the composition range of ③, aluminum nitride and silicon nitride ceramics are the most suitable, and aluminum nitride ceramics are particularly suitable. Within the scope, alumina-based ceramics are the most appropriate. 24 This paper size applies the Chinese national standard (CNS > A4 size (210X297 mm) f 444 2 1 〇 A7 B7 V. Description of the invention (,) Because of S 1 The resistance of the inner body is too large, and it is not suitable for electrothermal alloys. The group or series has the melting property to aluminum nitride ceramics, and the linear expansion coefficient is 4 ~ 7 X 1 (TS, because the silicide is adjusted by adjusting The linear expansion coefficient can be integrated with aluminum nitride-based ceramics. Therefore, the thermal stress at the fusion interface can be minimized, and the fusion film can be used stably at high temperatures. It also has a low melting point. It can reduce fusion The advantage of temperature. Also, the impedance can be adjusted by adjusting the amount of silicide in the matrix. ② The composition is because the linear expansion coefficient is 7 ~ SX ICT6, which makes it similar to the linear expansion coefficient of alumina ceramic substrate, so芾 Alumina-based ceramics can be used as the substrate. ②, ③ Both in the atmosphere High temperature < 1 000 ° c and above) have good oxidation resistance. Φ Both, especially ③, because of their high resistance, can shorten the length of the impedance loop, so can get a large Watt density per unit area. For electric heaters, the choice of ②, ③, and especially ③ is based on the above reasons. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) for integration Commercial quotes for the base material of electrothermal alloys. The reason why aluminum nitride, silicon nitride, and alumina are selected is based on 0), 0). Each linear expansion coefficient is similar to alumina, aluminum nitride, and silicon nitride. Therefore, the thermal stress at the fusion interface can be minimized. With regard to the X element of the _S! -X alloy, appropriate Cr, Mo, W 'Fe, Ni, Co, B, and Active metals such as P, and other elements formed by silicide, etc., and these elements can be adapted to 25 paper sizes according to the purpose of the Chinese National Standard (CNS) A4 (210X297 mm) 444 2 1 〇 Α7 87 Fifth, the description of the invention (/) When mixing one or more elements to make throw. Among these metals, active metals are particularly preferred. Active gold is an element that promotes moisturizing and diffusion for ceramics. The present invention uses V, Nb, Ta 'Ti, Zr, Hf, 1' Mη, Ca- Mg, Greek elements, and aluminum are expressed as active metals. Adding active gold arrogant to Si can significantly promote wetting and reduce the wetting angle. As a result, the fusion film can be fused Smooth, flat, and thin film, and can obtain a uniform and high-resistance coating, improve the fusion strength, and improve the wetting name. Although the effect can be seen by adding about 0.1%, it can be used for a small amount. The effect is best to add more than 0.5 $. In the Si_X alloy t} (for Ti, the area of ® is: 0% < Ti < 4 6%, 0 趵 area: 46¾ (TiSi〇i-Tis75% (TisSu). The silicium hafnium in the area of © is: TiSn, which is the microstructure of Si + TiSu. When X is Zr, the area of ③ is: 0% < Ti < 40% s ②The area of ② is: 40¾ (ZrS " ) i: The sands in the region of Tis93% (ZpSi) 3 are: Z r S i 2, · Department of S i + Z r S 1; Micro warp knitting. I «^^ 1 m . ^ 1 · ^^^ 1 1 ^ 1 β 4 ^^^ 1 ^^^ 1 ^^^ 1 ^^^ 1 ^^^ 1 1 ^ 1 J3. Tfl (Please read the notes on the back before filling (This page) The most wow range is for Si-Ti alloy, Ti: 10 ~ 25%, for Si-Zr alloy, Zr: 10 ~ 30%. And again, any one is weight%. Too much static electricity fixture The bottom surface of the suction mechanism part is integrated with the ceramic heater, which can quickly heat the processed object such as the semiconductor substrate being sucked. The bottom surface of the heating mechanism is further integrated with the cooling mechanism. It also has a cooling function, which can precisely control the temperature due to the bait hanging of the heating and cooling parts. 26 This paper size applies the Chinese National Standard (CNS) A4 specification (2I〇X 297 mm) f 444 2 1 〇 A7 B7 body V. Description of the invention (珙 When the electrostatic adsorption mechanism is combined with the heating mechanism and the cooling mechanism as a body, the cooling mechanism-heating mechanism and the electrostatic adsorption mechanism are ton =… 'is a necessary condition. When the order is reversed That is, the heating mechanism-the cold section machine. When the electrostatic adsorption mechanism is added between the heating mechanism and the electrostatic adsorption mechanism \ cooling mechanism ^ will make the cooling mechanism The gap part of the medium circulation path is formed. Since the thermal mechanism prevents the thermal movement of the electrostatic adsorption mechanism, the problem of slowing down the heating rate when the substrate is heated, that is, in the actual scraping process, due to your temperature —High temperature, high temperature—Low temperature change time / full time loss. This time loss will lead to a decrease in productivity. • Due to the reverse order_ The time loss during heating will increase, resulting in a significant decrease in productivity. Electrostatic adsorption mechanism The performance of the "such as thermal mechanism and cooling feed structure" means the following meaning: © The combination of metallurgical bonding is equivalent to the case where the electrostatic holding mechanism is welded with the ceramic heater and the cooling mechanism. @ When filming treatments such as solvent injection, PVD, CVD, spraying, etc., make the product film inversely and tightly bonded to the substrate. Specifically, it is equivalent to the case where the film is formed on the ceramic of the electrophoretic body. On the heater-where the electrode metal is formed into a film. On top of & where the electrolyzer ceramic is further formed into a film, or the electrode metal plate is bonded to the ceramic force heater, and the plate is electromotive. Where films are formed on ceramics. ® Sintered or fired metal-metallic metallurgical joints, 衙 metal-ceramics' ceramics-27 This paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm)! I—I, nH (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 444 2 1 〇 Α7 Β7 V. Description of the Invention (A) The combination of ceramics does not belong to metallurgy A combination of sintering or firing in the joining field.

[靜電吸著機構部] 本發明的靜電吸著機構部冏所謂的靜電夾具的靜電吸 著機構部. 靜電發著機構部係誘電體陶瓷，與含於此陶瓷背靣所 形成的靜霉誘導電極構造，作爲主要部的構造體的總稱. 即，單極方式的靜電夾具，係誘電體陶瓷與此陶瓷背面 所形成的靜電誘導電極合倂的構造體作爲主要部份，而 雯極方式係誘電雔陶瓷，與此陶瓷背面所形成的靜電誘 導電極及於此電極背面以絕緣板打底的搆造體作爲主要 部份的吸著機構部. 誘電體陶瓷係誘電體陶瓷的燒結體或誘電體陶瓷的膜， 以溶射而形成的誘電髅陶瓷被膜，或以噴射、CVD等薄 膜處理方式而形成者，或以其他成膜處理方式而形成者， 經濟部中央標準局員工消費合作社印繁 (請先閱讀背面之注意事項再填寫本頁) 以上方式皆圮任意選擇.此處的誘電體陶瓷並非僅限於 誘電率特別高的陶瓷.鑑於通常的絕緣陶瓷，若將其厚 度變薄則有吸著力增強的現象，故本發明所有的誘電率 不高的，通常的絕緣體陶瓷亦全部包含於& ”誘電體陶 瓷」的範圍，絕緣體陶瓷係包含於鈦酸氧化鋁、鈦酸鋇 等高誘電率陶瓷、氮化矽素、氮化鉬、氧化鋁、藍寶石、 碳化矽素、成膜成彩的鑽石、CBN等範圍. 又，爲消除接合時的歪斜，誘電體陶瓷的材質最好要 _28_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 444 2 1 Ο Α7 Β7 經濟部中央標準局貝工消費合作社印製 五、發明説明（^) 用與陶瓷加熱器相同的陶瓷，或選擇線膨脹係數相同或 近似者.即，陶瓷加熱器係氮化鋁系的場合。最好選擇 相同的氮化鋁系的陶瓷，或線膨脹係數相同或近似者. 又，使用誘電率不高旳，通常旳絕緣體陶瓷作爲誘電體 陶瓷時f例如使周氮化鋁作爲誘電體陶瓷時），爲提高誘 電率而添加高誘電率陶瓷的成份亦有效果. 雖然於靜電吸著機構部背面結合邡熱機構（陶瓷抝熱 器），在雙極的場合，加熱機構，即陶瓷加熱器亦可代用 爲靜電吸著機構部背面的絕緣體. 又，於吸著機構部背面結合如熱機構（陶瓷加熱器）時， 爲達到結合面應力緩衝的目的，亦有***異種Μ料層的 場合.本發明的靜電吸著機構部亦包含***層的部份之 總稱.[Electrostatic adsorption mechanism part] The electrostatic adsorption mechanism part of the present invention is a so-called electrostatic clamping mechanism part of an electrostatic clamp. The electrostatic generation mechanism part is an electromotive ceramic, and the static mold induction formed by containing the ceramic backing The electrode structure is the general name of the structure of the main part. That is, the unipolar electrostatic fixture is a structure in which the electrostatic induction electrode formed on the back of the ceramic ceramic and the ceramic is the main part. Electromotive ceramics, electrostatic induction electrodes formed on the back surface of this ceramic, and an adsorption mechanism part mainly composed of a structure with an insulating plate as a base on the back of the electrode. The body ceramic film is formed by solvent injection, or formed by spraying, CVD and other thin film processing methods, or formed by other film forming processing methods. (Please read the notes on the back before filling in this page.) All of the above methods can be selected arbitrarily. The ceramics of the electromotive body here are not limited to ceramics with a particularly high electromotive rate. If the thickness of conventional insulating ceramics is reduced, the absorption force will increase. Therefore, all the dielectrics of the present invention are not high. The general ceramics are also included in the & "electrical ceramics" range. It is included in the range of high-attractivity ceramics such as alumina titanate and barium titanate, silicon nitride, molybdenum nitride, alumina, sapphire, silicon carbide, film-forming diamond, and CBN. Distortion during joining, the material of the ceramic should preferably be _28_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 444 2 1 〇 Α7 Β7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Fifth, the description of the invention (^) Use the same ceramic as the ceramic heater, or choose the same or similar linear expansion coefficient. That is, when the ceramic heater is aluminum nitride. It is best to choose the same aluminum nitride-based ceramics, or the same or similar linear expansion coefficient. In addition, the dielectric constant is not high. Generally, when ceramic insulators are used as electrical ceramics, for example, peripheral aluminum nitride is used as electrical ceramics. )), The addition of high-inductivity ceramic components to increase the induction rate is also effective. Although the heating mechanism (ceramic heater) is combined on the back of the electrostatic attraction mechanism, in the case of bipolar, the heating mechanism, that is, ceramic heating The device can also be used as an insulator on the back of the electrostatic sorption mechanism. When a thermal mechanism (ceramic heater) is combined on the back of the sorption mechanism, for the purpose of buffering the stress on the bonding surface, there is also a different type of M material layer inserted. Occasion. The electrostatic sorption mechanism of the present invention also includes a general term for the part of the insertion layer.

[冷部機搆] 於基材上安裝冷媒循環路，並使裡面的液體、氣體循 澴而作冷卻. 循環路係於基材上作溝加工或埋入管路、將分隔板捲 成旋渦狀、於兩端面接合肓板而形成旋渦狀的循環路、 內藏管路的構造以鑄造金屬、溶接、陶瓷燒結體形成等 種種方法Μ形成. 肜成循環路基材的材料，係採用任何導熱性良好的金 屬、陶瓷、或金屬陶瓷的複合材料等.特別是金屬/陶姿 複合玆料，因藉S改變其比倒可自在的調節線膨脹係數， 29 I 裝 訂 外 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 444210 A7 B7 五、發明説明（>Ί ) 故有利於接合部殘留應力的減輕.又，當陶瓷如熱器與 冷卻機構接合時，爲達到殘留應力緩和的目的s其有效 方法可***異種材料;t而接合. 實施例 以實施例說明本發明. 實施例1 (雙面融著型） 陶瓷基材：使用氮化鋁、氮化矽素、碳化矽素、氧化鋁4 種基材.使用阻抗爲I 〇 Μ Ω . c m的氮化矽素. 基枝尺寸：1 〇 X 3 0 X 0.6 m ra的板. 融著金屬：於上述陶瓷基材（氮化鋁、氮化矽素' 碳化矽 素、氧化鋁）的上面4如圖1 3所示t於寬2mm ,長22ram 的下述組成（表1 )調合的金屬粉末與聚乙烯醇的乙醇溶 液混合成謬糊跋並將其塗葙後，與如圖14 .所示的兩篛開 孔（Φ 1mm)的陶瓷基材重合，乾燥後，加熱溶融如圖15加 以融著.孔間的距離爲20mm. S!的原料係使用將半導體基板搗碎而作成的粉末，與 純度 99.999%(A1 ' Mg、Ca、Na 芸 Ippm)的粉末.搏出 導體基板搗碎衙作成的粉末爲B塗布的P型Si. B塗布的P型Si的阻抗爲0.0〜O.i Ω * cm.使用P型Si 的試料以^ P型Si」表示t未表示的試料係使用純度 99 . 999%的粉末， 加熱氣氛爲真空（5 X ΚΓ 5 To r r )及氬.融著金屬的微組 織洚選擇形成上述②、Φ的微緹織範圍，即矽化物生 30 本紙張尺度適用中國國家標準（CNS ) A4規格（2I0X297公釐） ---------ά------.玎------i (請先閲讀背面之注意事項再填寫本頁) Α7 Β7 444 2 1 Ο 五、發明説明（d ) 成範圍、形成矽化物與S !混在組織的範圍、S 1單體耝織 的3個組成成份. 經濟部中央標準局員工消費合作社印製 [表1] 號碼粉末組成基核融著溫度(°c)微組織 摸厚(// ΙΠ) 1 Si ALN 1460 Si 多結晶 趙抗：80(〇)?型51(：6塗布）氬氣氛 100 u m 2 Si-25%Ti ALN 陪抗：8.5(Ω) 1400 Si+矽化物 50 ji m 3 Si-5_ ALN 阻抗：2,0(Ω) 1520 矽化物 10 μ m 4 Si-25%Cr SiC 阻抗：8‘0<Ω) 1550 Si+矽化物 45 μ ττι 5 Si-lCMo SiC 組抗：2.0ίΩ) 1460 Si+矽化物 60 // ra 6 Si-37%Hf ALN 阻抗：6.0( Ω) 1400 Si+矽化物 55 /ζ ιώ 7 Si-20%Zr ALN 阻抗：7.0( Ω) 1480 Si +矽化物 60 β ΐϋ 8 Si-18Ti SiN 阻抗：2·0(Ω) 1430 Si+矽化物 60 β m 號碼粉末組成 基材融著溫度(t：)膜厚(yra) 9 Si-6%Nb-4%Fe 阻抗：16.0( Ω) SiC 14S0 徵組織：Si+矽化物 20 // m 10 Si-lS%Nb~12%Ni 阻抗：13.0( Ω) SiC 1500 微組織：Si+矽化物 30 // m 11 Si-15%Ta 阻抗：5,0ίΩ) ALN 1450 微繼^ SU網匕物 ΊΟ β m 12 Si-10W 瞧：7.0( Ω) SiC 14S0 微規織：Si+矽化物 60 β γϊι 13 Si-15Ti-10%Zr 阻抗：7·0ίΩ) .4LN 1450 微組織：Si +矽化物 50 β m 14 Si-15%Y 阻抗：5.0( Ω) SiC 1480 微組織：S1+矽化锪 60 μ m 31 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^^1 II - I- n^— ^^1 —II ^^1 n^i ^^1 HE 瞧 XT U3 、T (請先閱讀背面之注意事項再填寫本頁) 444 2 1 Ο Α7 五、發明説明（/丨） 15 S 卜 5【i、5%Ni 組抗：11.0( SiC 1450 微組織：Si+矽丨匕锪 30以m 16 Si-lO^Co 阻抗：15.0( Ώ) 氣氛：氬氣氛 ALN 1450 微組織：S!+矽化物 20 β m 17 Si-5%Ti 阻抗：Ι.δ(Ω) AWi 1550 微組織：S1+矽化物 10 μ m 1S (MosAl) 阻抗：16.0(Ω) 風3¾ :通氣夙 Ab〇3 1900 微組織：複矽化物 10 μ m 基样 :ALN爲氮化 ;鋁 s i C碳化矽素-S ί N爲氮化矽素 AhCh爲髙純度氧化鋁 氣氛爲第1 , 1 8係氬氣氛，其他則係真空氣氛.阻抗係由 圖15的2個孔***阻抗測定用電極而定. 實施例2 (加熱試驗） 將實施例1的試料印加交流電壓而進行加熱測試.在5 分鐘內加熱至500 5C爲止，並放冷至常溫.如Ibb重複1 00 次，任何試料皆無剝落及破裂之情形. 經濟部中央標準局員工消費合作社印黎 (請先聞讀背面之注意事項再填寫本頁) 接著係融著金屬的抗氧化性試驗.將實施例I的試料 以1 000 t：加熱5小時.而且，看不到因融著薄膜的氧化 所導致的阻抗變化. 實施例3 (被膜的均一融著性比較） 比較關於在單面的陶瓷基紂融著5Π熱固路（單面融著 32 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 經濟部中央標隼局員工消費合作社印製 Α7 _ Β7 五、發明説明（Μ ) 構造），與於兩枚基板間挾著加熱回路並將其融著於雙 面的陶瓷的構造（雙面融著構造）的被膜厚度均勻性（凹 凸、平坦性）' 寬度的均勻倥、表面悭狀· 陶瓷基材：氮化鋁基材的尺寸爲1 〇〇 X 1 〇〇 ?[ 0,6mm旳板 融著金_ :選擇2個滴濕性不同的融著金屬，選擇高純 度 SU99.999%)' St-25%,並加以比較· 將Si粉末（粒度325篩孔以工）與聚乙烯醇的乙醇溶液 混合成膠糊狀，並將其印刷於上述氮化鋁基材的表面， 如圖16的回路模型.回路的寬爲i〇ram，回路與回路的間 隔爲5 ΙΒ Π1 . 單面融著試料係將單面印刷之浚的試料乾燥後，於真 空中（5 X 1 0·5 Το Γ Γ)加熱並加以融著. 雙面融著試料係印刷之後，並將相同的陶瓷板的位置 調整使重合.乾燥後，於真空中（5 X 1CT5 Το ί· 1_)加熱並加 以融著， 高純度S!的試料係於} 450 t加熱並加以融著.Si -2 5%Τι的試料係於I 400 _t加熱竝抝以融著.[Cold part mechanism] Install a refrigerant circulation path on the base material and allow the liquid and gas inside to circulate for cooling. The circulation path is grooved or buried in the pipeline on the base material, and the partition plate is rolled into a vortex shape.肓 The cylindrical circulation path is formed by joining the cymbals at both ends. The built-in pipeline structure is formed by various methods such as casting metal, welding, and ceramic sintered body formation. The material of the base material of the circulation path is any thermal conductivity. Good metal, ceramic, or cermet composite materials, especially metal / ceramic composite materials, because it can be adjusted by S to adjust the linear expansion coefficient freely, 29 I binding outside (please read the first Note: Please fill in this page again.) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Residual stress reduction. Also, when ceramics such as heaters and cooling mechanisms are joined, in order to achieve the purpose of residual stress relaxation, its effective method can be inserted into different materials; t and joined. Example to Example Explain the invention. Example 1 (Double-sided fusion type) Ceramic substrate: 4 kinds of substrates are used: aluminum nitride, silicon nitride, silicon carbide, and alumina. Nitrogen with an impedance of 100 Ω.cm is used. Silicone. Base size: 1 〇 3 0 X 0.6 m ra plate. Fused metal: on the above ceramic substrate (aluminum nitride, silicon nitride 'silicon carbide, aluminum oxide) 4 such as The metal powder blended with the following composition (Table 1) with a width of 2 mm and a length of 22 ram shown in Figure 13 is mixed with a solution of polyvinyl alcohol in ethanol to make a mess, and it is shown in Figure 14. The two ceramic substrates with holes (Φ 1mm) are overlapped. After drying, they are melted by heating and melting as shown in Figure 15. The distance between the holes is 20mm. S! The raw material is a powder made by crushing a semiconductor substrate. The powder with a purity of 99.999% (A1 'Mg, Ca, Na Yun 1ppm). The powder made by smashing the conductor substrate is B-coated P-Si. The impedance of B-coated P-Si is 0.0 ~ Oi Ω * cm. Samples using P-type Si ^ P-type Si "means t. Samples not shown are powders with a purity of 99.999%, the heating atmosphere is vacuum (5 X ΚΓ 5 To rr) and argon. The metal microstructure 金属 is selected to form the micro-texture range of ② and Φ above, that is, silicide produces 30 paper sizes that are applicable to China National Standard (CNS) A4 specifications (2I0X297 mm) --------- ά ------. 玎 ------ i (Please read the precautions on the back before filling out this page) Α7 Β7 444 2 1 〇 V. Description of the invention (d) Formation of range, formation of silicide and S! Mixed in the scope of the organization, the three components of the S 1 unit are woven. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs [Table 1] Number powder composition base core fusion temperature (° c) microstructure thickness (// ΙΠ) 1 Si ALN 1460 Si polycrystalline Zhao Zhao: 80 (〇)? Type 51 (: 6 coating) argon atmosphere 100 um 2 Si-25% Ti ALN Accompanying resistance: 8.5 (Ω) 1400 Si + silicide 50 ji m 3 Si-5_ ALN impedance: 2,0 (Ω) 1520 silicide 10 μm 4 Si-25% Cr SiC impedance: 8'0 < Ω) 1550 Si + silicide 45 μ ττι 5 Si-lCMo SiC impedance: 2.0ίΩ ) 1460 Si + silicide 60 // ra 6 Si-37% Hf ALN impedance: 6.0 (Ω) 1400 Si + silicide 55 / ζ ι FREE 7 Si-20% Zr ALN impedance: 7.0 (Ω) 1480 Si + silicide 60 β ΐϋ 8 Si-18Ti SiN Impedance: 2 · 0 (Ω) 1 430 Si + silicide 60 β m number powder composition base material melting temperature (t :) film thickness (yra) 9 Si-6% Nb-4% Fe impedance: 16.0 (Ω) SiC 14S0 characteristic structure: Si + silicide 20 / / m 10 Si-lS% Nb ~ 12% Ni Impedance: 13.0 (Ω) SiC 1500 Microstructure: Si + silicide 30 // m 11 Si-15% Ta Impedance: 5,0ίΩ) ALN 1450 micro relay ^ SU net dagger Ί〇 β m 12 Si-10W Look: 7.0 (Ω) SiC 14S0 Microstructure: Si + silicide 60 β γϊι 13 Si-15Ti-10% Zr Impedance: 7.0 · Ω) .4LN 1450 Microstructure: Si + silicide 50 β m 14 Si-15% Y Impedance: 5.0 (Ω) SiC 1480 Microstructure: S1 + Si silicide 60 μ m 31 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ^^ 1 II-I -n ^ — ^^ 1 —II ^^ 1 n ^ i ^^ 1 HE Look at XT U3, T (Please read the precautions on the back before filling this page) 444 2 1 〇 Α7 V. Description of the invention (/ 丨) 15 S BU 5 [i, 5% Ni impedance: 11.0 (SiC 1450 microstructure: Si + silicon) 30 to m 16 Si-lO ^ Co impedance: 15.0 (() atmosphere: argon atmosphere ALN 1450 microstructure: S ! + Silicide 20 β m 17 Si-5% Ti Impedance: I.δ (Ω) AWi 1550 Microstructure: S1 + silicon Compound 10 μm 1S (MosAl) Impedance: 16.0 (Ω) Wind 3¾: Ventilation 夙 Ab〇3 1900 Microstructure: Complex silicide 10 μm Base sample: ALN is nitride; aluminum si C silicon carbide-S ί N For silicon nitride, AhCh, ytterbium-purity alumina atmosphere, the first, 18 series of argon atmosphere, and the others are vacuum atmosphere. The impedance is determined by inserting the impedance measurement electrode through the two holes in Fig. 15. Example 2 (Heating Test) The sample of Example 1 was subjected to a heating test by applying AC voltage. It was heated to 500 5C within 5 minutes and allowed to cool to room temperature. If Ibb was repeated 100 times, no sample was peeled and cracked. Ministry of Economic Affairs Central Standards Bureau's Consumer Cooperatives, India Li (please read the precautions on the back before filling out this page) and then test the oxidation resistance of the metal. The sample of Example I was heated at 1 000 t: 5 hours. No change in impedance due to oxidation of the fused film is observed. Example 3 (Comparison of Uniform Adhesion of Coatings) Comparison of 5Π Thermal Fixation on a Single-Side Ceramic Substrate (32 Papers on One Side) Standards apply to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumers' Cooperative of the Central Bureau of Standards of Ministry of Economic Affairs A7 _ Β7 V. Description of the invention (M) structure), and a structure in which a heating circuit is sandwiched between two substrates and it is fused to double-sided ceramics Film thickness uniformity (concave and convexity, flatness) 'Uniform width 悭, surface 悭 shape · Ceramic substrate: The size of the aluminum nitride substrate is 1 〇 × 1 〇〇? [0.6 mm Fused gold_: Select 2 fused metals with different dripping wetness, choose high purity SU99.999%) 'St-25%, and compare them · Si powder (size 325 sieve to work) and polyvinyl alcohol The ethanol solution was mixed into a paste and printed on the surface of the above aluminum nitride substrate, as shown in the circuit model of Fig. 16. The width of the circuit was i〇ram, and the distance between the circuit and the circuit was 5 ΙΒ Π1. One side The fusion sample is dried on one side of the printed sample, and then heated and fused in a vacuum (5 X 1 0 · 5 Τ Γ Γ). After the double-sided fusion sample is printed, the same ceramic plate is printed. Adjust the position to make it overlap. After drying, heat in a vacuum (5 X 1CT5 Τ · 1_) and melt it. Of S! Based on the sample} 450 t and be heated for fusion .Si -2 5% Τι sample based on I 400 _t and heated to melt the bend.

[結果] [單面融著試料] 高純度Si的試料變爲***旦凹凸的被膜.又，回路模 型的寛比當初印刷後的寬爲窄.[Results] [Single-side fusion sample] The sample of high-purity Si turned into a film with raised densities. Furthermore, the loop size of the loop model was narrower than the original width after printing.

Si-25%Tt的試料形戎幾乎無凹凸的平坦被膜，且回路 模翌的寬比當初S後的寬大致相同. ___33 本紙張又度適用中國國家樣準（CNS ) A4規格（210X297公釐) —^-1T^ (請先閲讀背面之注意事項再填寫本頁) 444 2 1 0 經濟部中央標準局負工消費合作社印策 A7 B7 五、發明説明（V) 單面融著試料因融著金屬潤濕性的不同而造成被膜平 坦度、凹凸程度的不同.The sample shape of Si-25% Tt is a flat film with almost no unevenness, and the width of the loop mold is roughly the same as the width after S. ___33 This paper is again applicable to China National Standard (CNS) A4 (210X297 mm) ) — ^-1T ^ (Please read the precautions on the back before filling out this page) 444 2 1 0 Printing policy A7 B7 by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economy Due to the different wettability of the metal, the flatness and unevenness of the coating are different.

[雙面融著試料] 另一方面，挾著二枚陶瓷面融著的雙面融著試料，係 由於高純度Si的試料與Si-25 %T!的試料同時挾於陶瓷板 的雙面，故形成完全融著，平坦且無任何凹凸起伏的被 膜.又，回路模型的寬比當初印刷後的寬大致相同而融 著. 即使雙面融著試料的融著金屬的潤濕性不同，亦可融 著成平坦且無任何凹凸起伏的被膜. 雙面融著型可確認被膜的平坦性，即厚度的均一往' 回路寬的均一性方面，均比單面融著型爲佳. 實施例4 (融著構造舆加熱時變形量試驗） 陶瓷基材：氮化鋁 基材尺寸：1 Ο X 11 Ο X 0.6mm的板 融著金靥：Si-25%Ti[Double-sided fused sample] On the other hand, two ceramic-sided double-sided fused samples are held together because the high-purity Si sample and the Si-25% T! Sample are simultaneously held on both sides of the ceramic plate. Therefore, it forms a completely fused, flat, film without any unevenness. Also, the width ratio of the loop model after printing is approximately the same and fused. Even if the double-sided fused sample has different wettability of the fused metal, It can also be fused into a flat film without any unevenness. The double-sided fusion type can confirm the flatness of the film, that is, the thickness is uniform. The uniformity of the circuit width is better than the single-sided fusion type. Implementation Example 4 (Test for deformation amount during fusion structure heating) Ceramic substrate: Aluminum nitride substrate Size: 1 〇 X 11 〇 X 0.6mm plate fused gold: Si-25% Ti

Si 直料：99 .999%純度（Al，M2、Ca、Na S ippm) 上述組成所調合的金靥粉末與聚乙烯醇的乙醇溶液混 合成膠糊狀，並將其全面塗布於上述陶瓷板（下板）的單 面，乾燥後，於兩端穿開直徑Ιιγι»的孔的相同的陶瓷板 ί上板）並加以重合，於真空中（5 X 10_5Torr)以1 400 °C 加熱溶融，並融著二枚的陶瓷. 又，爲了比較起見，亦作成於上述陶瓷板的單面全面 塗布，乾燥後，於雨端穿開直徑I mm的孔的相同的陶瓷 34 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^^1 1 - - - - - —^^1 ^^^1 n —^1 (請先閱讀背面之注意事項再填寫本X ) 訂 f 444 2 1 〇 A7 _B7_____ 五、發明説明（R ) 板（上板）並如以重合，於真空中（.5 X 1(Τ:Τ〇ΓΓ)以MOO t加熱溶融，並加以融著的跫面融著試料.Si straight material: 99.999% purity (Al, M2, Ca, Na S ippm) The gold tincture powder blended with the above composition is mixed with a solution of polyvinyl alcohol in ethanol to form a paste, and the whole is coated on the ceramic plate (Lower plate) on one side, after drying, pierce the same ceramic plate with holes with a diameter of ιιι »at both ends and overlap them, heat and melt in a vacuum (5 X 10_5Torr) at 1 400 ° C, Two ceramics are fused together. For comparison, the same ceramics are also coated on one side of the ceramic plate. After drying, the same ceramics are punched through the holes with a diameter of 1 mm at the rain end. This paper is suitable for China. National Standard (CNS) A4 specification (210X297 mm) ^^ 1 1------^^ 1 ^^^ 1 n-^ 1 (Please read the notes on the back before filling in this X) Order f 444 2 1 〇A7 _B7_____ 5. Description of the invention (R) The plate (upper plate) is superimposed and fused in a vacuum (.5 X 1 (Τ: Τ〇ΓΓ) with MOO t. Try the sample.

[結果] 將2種的試料（雙®融著、星靣融著試料）融著後，於_ 端印加交流電，在500 °C下昇溫5分鐘· 此時，軍面融著試輯發生2 X 10-4m的彎曲，而雙面融 著型幾乎皆無彎齒. 實施例5 陶瓷基材：使用氮化鋁、碳化矽素、氮化矽素3種基材.使 用阻抗爲1 0: Ω · cm的氮化矽素. 基材尺寸：10 X 30 X 0.6mm的板. 融著金屬：於上述陶瓷基材的單面上，如圖4所示，於 寬2mm,長22mni的下述組成（表2)調合的金屬粉末與聚乙 烯醇的乙醇溶液混合成膠糊狀並將其極薄迪塗苟，乾燥 後，將其加熱融溶逆使融著. S i的原料係使用將半導體基板搗碎而作成的粉末，與 純度99 . 999%的粉末.將半導體基板搗碎而作成的粉末 爲B塗布的p型Si. 經濟部中央標準局員工消費合作社印製 ^^1 I. -I I - -1 ^^^1 I— ^^^1 ^n· _ J^i Τ» U3 、-fl (請先閱讀背面之注意事項再填寫本頁) B塗布的p型阻抗爲0.0〜0.1Ω · cm.使用卩型。 的試料以r P型S1 表示，未表示的試料係使甬純度 99 .999%的粉末. 加熱氣氛爲真空（5 X 10·5 Tor r)及氬， 融著金屬的微組織係選擇彩成上述②、3:、④的微組織 範圍，節矽化饬生成範圍、彤成矽化物與Si混在組織的 35 各紙張尺度適用中國國家標準（CNS ) A4規格（2丨OX297公釐） ρ 444 2 1 Ο A7 B7 五、發明説明（A) 經濟部中央標準局員工消費合作社印製 範圍' S i單體組織的3個組成.阻抗係以20龍長的距離 而測定. [表2] 號碼粉末組成基紂融著溫度(t)微組織 mm( μ. m) 1 Si ALN 1460 Si 多結晶 阻抗：200( Ω) P型Si (B塗相）氬氣氛 50 μ. m Si-25%Ti ALN 阻抗：7.0( Ω) 1400 Si +矽化較 ί 5Q β m 3 Si-50%Ti ALN 阻抗：1‘5(Ω) 1520 矽化物 Μ氣氛 20 μ m 號碼粉末組成 基材融著溫度(°C) 膜厚（/i m) 4 Si-25^Cr-l%Ti 阻抗：10.0( Ω) ALN 1550 微組織：Si+矽化物 AO μ m 5 Si-l(Mo-0.5%Ti 阻抗：7.5( Ω) SiN 1460 徽組織：Si+矽化物 50 Ai ra 6 Si-37%Hf 阻抗：6.0( Ω) ALN 14⑻ 微組織：Si+矽化物 70 n rii 7 S卜2齡 阻抗：8.0( Ω) ALN 1480 微組織：Si+矽化物 60 m 8 Si-15Ta 阻抗：6.0( Ω) ALN 1450 微組織：S1+矽化物 50 μ. ra 9 S 卜 iO%V 阻抗：6.0( Ω) SiC 1480 微組織：Si+矽化物 SO μ m 10 Si-I5%Ti-10%Zr 阻抗：8.0(Ω) ALN 1450 微組織：Si+矽化物 70 ^ ra 11 Si-· 阻抗：6·0(Ω) SiN I4S0 微組織：Si+矽化物 40 β ra 12 S 卜置r-5%Ni 阻抗：_7.0(Ω) SiC 1450 微組織：S1+矽化物 50 β ra 13 S卜縦〇 阻抗：6.0( Ω) ALN 1450 微組織：1+矽化物 60 μ m fer1 基紂：ALN爲氮化鋁、Si C爲碳化矽素、SiN爲氮化矽素 36 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） ----------^------tr------义 (請先閲讀背面之注意事項再填寫本頁) 444210 A7 B7 五、發明説明（叫） 氣氛除第1 , 3，1 ?爲氬氣氛外t其餘皆爲真空· 阻抗係以20mm長的距離而Μ定. 實施例6 (邡熱試驗） 將實施例5的試料印加交流電逆進行加熱試驗· 加熱5分鐘至500 °C ,再將其放冷至常溫.如此重複 1 00次，任何試料皆無剝落及破裂之情形. 接著進行融著金屬的抗氧化性試驗.將實施例5的試 料以1000 t加熱5小時. 而且，看不到因融著薄膜的氧化所導致的剝落及阻抗 變化. 實施例7 陶瓷基ίί :氯化錯 基材尺寸：10 X 25 X 0·6μ的板. 融著金屬：於上述陶瓷基材板（下板）的單面上，在寬 2mm,長2 2rora的範圍噴射ΊΊ0.5 y m及更進一步在Ή上噴 射 S i 4 μ m . 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項存填寫本萸) 妃圖1 4所示，在兩端開直徑1 nrn孔（孔間距離：20mm ) 的相同陶瓷板（上板）的單面上，亦在寬2關，長22mm的 範圍噴射ΊΊ0.5// ra及更進一步在Tii：噴射Si4/z ra. 重合噴射面，於真空中（5 x lO lorr)以1 400 t t/3熱 溶融，如圖1 5所示，融著二枚陶瓷 [結杲] ___37_ 本張尺度適ϋ國國家標準（CNS〉A4規格（210X297公釐) f 444 2 1 Ο A7 B7 五、發明説明（4) 由融著試料的直徑1 mm的孔***電極端子以Μ定阻抗. 其結果爲1 Ο Ω . 接著進行加熱試驗 加熱5分鐘至500 t，再將其放冷至常溫.如lit重複 i00次，結果二枚陶瓷皆看不到剝落及破裂之情形. 接著以1 000 t加熱U)小時進行抗氧化試驗. 二枚陶瓷皆看不到剝落及破裂之情形，而且，融著被 膜亦看不到阻抗的變化. 接著，以圖面說明靜電夾具的實施例. 本發明基本上可分爲匹大構造. 其中之一係誘電體陶瓷形成燒結體的構造 < 圖1 7 ),另 一係誘電體的成膜手法，例如以溶射、CVD、PVD、噴射 及其陆成膜手法而影成的構造（圖1S),其他則係關於加 熱機構接合於冷卻機構的構造（圖19, 20).圖17〜20係 這些狀況的說明圖， 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 圖1 7係靜電吸著機構部的謗電體陶瓷彤成燒結體，圖 1S係靜電吸著機構部的誘電體陶瓷B成成膜者，圖19係 圍17的構造接合於冷部璣構的構造，圖20係圖18的構 造接合於冷卻機構的構造. 誘電體陶瓷係燒結體時，電極的形成方法可分二種構 ΐϋϊΐ 1 一種爲如 2 1所示；將陶瓷與電極燒結爲一體的構造 電極係被包裏於陶瓷之中·另一種爲如S 22所示，蔣燒 結體焊接於邡熱器，焊接層係兼有電極的搆造. 38 本紙張尺度適用中國國家標率（CNS ) Α4規格（210 X 297公釐） 444210 A7 B7 五、發明説明（4 ) 在圖21構造的場合，亦可將陶瓷加熱器的電熟· 接融著於誘電體啕瓷的單面.即如圖2 3所示，加熟器車 面的陶瓷珂以誘電體陶瓷的單面代用之· 以下同寅施例說明 實施例S (構造：圖24的構造） 靜電吸著機構部：使用氮化鋁圓板（厚度φ 5 0 X 0.2mm ；) 加熱機構 ：使用2枚的Φ50Χ11的氮化鋁板及電 熱合金爲SUTiSi:的微組織合金合金）. 於二枚氮化鋁板（①5 0 X i t )的單面，一一的將s i -2 5%T i合金的粉末印剩在電熱回路筷型上.假澆結後將 二枚重音，並於真空中以1430 t溶融融著之電熱合金 膜的厚度爲1〇〇 # [接合] 靜電吸著機構部的氮化鋁板與加熱器的接合，亦與電 熟合金使用相同的S i - 25%T i合金.接合係與加熱器的接 合同時進行. 經濟部中央標準局員工消费合作社印製 使用接合金屬作爲電極{垔極）. ί試驗] 靜電吸著：於電極與矽片之間©加7〇OV的直流電，將 誘電體陶瓷表面的2吋的矽片吸著起來. 加熱：由常溫（2 0 t )開始加熱，將加熱器導電，於较 片的表面可在6 0秒內加熱至7 〇 〇 DC . f呆持：控 S卩熱器5Π熱之on - OFF ,可使政片的表面溫 ____39 -- 本紙張尺度適用中國國家標準（CNS > A4規^ΤΤΓ〇><297公瘦j - 444 2 1 Ο Α7 Β7 五、發明説明（4 ) 度保持在700 t. ± 5 aC範圍. 由此可確認到本發明可將矽片急速加熱且保持均一 .注. 實施例9 (構造：圖2 5的搆造） 實施例8的構造接合冷卻機搆的構造. 靜電吸著機構部、陶瓷加熱器係與實施例S相同的方法 製造.電熱合金使用Si-20%Zr合金.於真空中以1 430 °C 接合.電極係利用接合金屬層作爲單極. 冷卻機構的構造：係將寬1 〇mm、厚0 , 5mm的鎢帶捲繞 成旋渦狀並將其挾於二枚的Φ 50 X It的圓扳之間，於端 面將二枚鎢的圓扳與銀焊接的搆造.冷郤係用水冷及空 冷.[Result] After melting two kinds of samples (double® fusion and star fusion fusion samples), AC power was applied to the _ terminal and the temperature was raised at 500 ° C for 5 minutes. At this time, the military fusion test series 2 X 10-4m is curved, but the double-sided fusion type has almost no curved teeth. Example 5 Ceramic substrate: 3 kinds of substrates such as aluminum nitride, silicon carbide, and silicon nitride are used. The impedance is 1 0: Ω · Silicon nitride in cm. Substrate size: 10 X 30 X 0.6mm plate. Fused metal: on one side of the above ceramic substrate, as shown in Figure 4, on the following 2mm wide and 22mni long Composition (Table 2) The blended metal powder is mixed with a solution of polyvinyl alcohol in ethanol to form a paste and it is extremely thin. After drying, it is heated and melted to make it melt. S i's raw material is used. Powder made by mashing semiconductor substrates and powder with a purity of 99.999%. Powder made by mashing semiconductor substrates is B-coated p-type Si. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^^ 1 I. -II--1 ^^^ 1 I— ^^^ 1 ^ n · _ J ^ i Τ »U3 、 -fl (Please read the precautions on the back before filling this page) B-coated p-type impedance is 0.0 ~ 0.1Ω · c m. Use 卩 type. The sample is represented by r P type S1. The sample that is not shown is a powder with a purity of 99.999%. The heating atmosphere is vacuum (5 X 10 · 5 Tor r) and argon. The microstructure of the metal is selected. The microstructure range of the above ②, 3 :, and ④, the range of silicon silicide generation, the formation of silicide and Si mixed with 35 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (2 丨 OX297 mm) ρ 444 2 1 〇 A7 B7 V. Description of the invention (A) The three components of the single consumer organization printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The impedance is measured at a distance of 20 long. [Table 2] Number powder Composition base melting temperature (t) microstructure mm (μ. M) 1 Si ALN 1460 Si polycrystalline impedance: 200 (Ω) P-type Si (B coating phase) argon atmosphere 50 μ. M Si-25% Ti ALN Impedance: 7.0 (Ω) 1400 Si + silicified than 5Q β m 3 Si-50% Ti ALN Impedance: 1'5 (Ω) 1520 Silicide M atmosphere 20 μm No. powder composition substrate melting temperature (° C) Film thickness (/ im) 4 Si-25 ^ Cr-l% Ti Impedance: 10.0 (Ω) ALN 1550 Microstructure: Si + silicide AO μ m 5 Si-l (Mo-0.5% Ti Impedance: 7.5 (Ω) SiN 146 0 Microstructure: Si + silicide 50 Ai ra 6 Si-37% Hf Impedance: 6.0 (Ω) ALN 14⑻ Microstructure: Si + silicide 70 n rii 7 S 2nd age impedance: 8.0 (Ω) ALN 1480 Microstructure: Si + Silicide 60 m 8 Si-15Ta Impedance: 6.0 (Ω) ALN 1450 Microstructure: S1 + silicide 50 μ. Ra 9 S i iO% V Impedance: 6.0 (Ω) SiC 1480 Microstructure: Si + silicide SO μ m 10 Si-I5% Ti-10% Zr Impedance: 8.0 (Ω) ALN 1450 Microstructure: Si + silicide 70 ^ ra 11 Si- · Impedance: 6.0 · (Ω) SiN I4S0 Microstructure: Si + silicide 40 β ra 12 S BU set r-5% Ni impedance: _7.0 (Ω) SiC 1450 microstructure: S1 + silicide 50 β ra 13 S BU impedance: 6.0 (Ω) ALN 1450 microstructure: 1+ silicide 60 μ m fer1 base: ALN is aluminum nitride, Si C is silicon carbide, SiN is silicon nitride 36 This paper is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) ------- --- ^ ------ tr ------ meaning (please read the notes on the back before filling this page) 444210 A7 B7 V. Description of the invention (called) Atmosphere except the first, 3, 1? Outside the argon atmosphere, the rest are vacuum. The impedance is at a distance of 20mm. And M. Example 6 (Hot heat test) The sample of Example 5 was subjected to a heating test with an alternating current inversion. Heating was performed for 5 minutes to 500 ° C, and then it was allowed to cool to normal temperature. This was repeated 100 times without any sample. Cases of peeling and cracking. Next, the oxidation resistance test of the fused metal was performed. The sample of Example 5 was heated at 1000 t for 5 hours. In addition, the peeling and resistance changes due to oxidation of the fused film were not observed. Implementation Example 7 Ceramic substrate: Chlorinated substrate size: 10 X 25 X 0 · 6μ plate. Fused metal: on one side of the above ceramic substrate plate (lower plate), 2 mm wide and 2 2 rora long The range sprays ΊΊ0.5 ym and further sprays S i 4 μm on Ή. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back and fill in this 先). One side of the same ceramic plate (upper plate) with 1 nrn diameter holes (distance between holes: 20mm) at both ends is also sprayed in the range of 2 wide and 22mm long ΊΊ0.5 // ra and further on Tii: Spray Si4 / z ra. Overlap spray surface, melt in vacuum (5 x lO lorr) at 1 400 tt / 3 As shown in Figure 15, two ceramics are [fused] ___37_ The size of this sheet is in accordance with the national standards of China (CNS> A4 specification (210X297 mm) f 444 2 1 〇 A7 B7 V. Description of the invention (4) by Insert a hole with a diameter of 1 mm in the sample and insert the electrode terminal to set the impedance. The result is 10 Ω. The heating test is then performed for 5 minutes to 500 t, and then it is allowed to cool to normal temperature. If the lit is repeated i00 times, the result is No peeling or cracking was seen on the two ceramics. Then the oxidation test was performed with 1 000 t heating U) hours. No peeling and cracking was seen on the two ceramics, and no impedance was seen when the film was fused. Next, the embodiment of the electrostatic clamp will be described with drawings. The present invention can basically be divided into a large structure. One of them is a structure in which a ceramic body forms a sintered body < FIG. 17), and the other is an electrical body. Film-forming methods, such as the structure formed by dissolution, CVD, PVD, spraying, and land film-forming methods (Figure 1S), and the other is the structure of the heating mechanism connected to the cooling mechanism (Figures 19, 20). 17 ~ 20 are explanatory diagrams of these situations. Printed by Sakusha (please read the precautions on the back before filling out this page) Figure 1 7 is a sintered ceramic body of the electrostatic absorbing mechanism, and Figure 1S is a ceramic body B of the electrostatic absorbing mechanism In film formation, the structure of FIG. 19 and the structure of the periphery 17 are joined to the structure of the cold section, and the structure of FIG. 20 and the structure of FIG. 18 are joined to the structure of the cooling mechanism. Structure ΐϋϊΐ 1 is shown in 2 1; the structure electrode system which sinters the ceramic and the electrode is integrated in the ceramic. The other is shown in S 22, the sintered body of Jiang is welded to an autoclave and the welding layer It has a structure with electrodes. 38 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 444210 A7 B7 V. Description of the invention (4) In the case of the structure shown in Figure 21, ceramics can also be used. The electric heating of the heater is connected to the single side of the porcelain of the electric induction body. That is, as shown in Fig. 23, the ceramic of the electric car surface is replaced by the single side of the electric induction ceramic. Example S (Structure: Structure of FIG. 24) Electrostatic Adsorption Mechanism: Using Aluminum Nitride Round (Thickness φ 5 0 X 0.2mm;) Heating mechanism: 2 pieces of Φ50 × 11 aluminum nitride plate and microstructure alloy alloy of SUTiSi: are used for electric heating alloy. On one side of two aluminum nitride plates (① 5 0 it) The si -2 5% Ti alloy powder is printed on the chopsticks of the electric heating circuit one by one. After the fake pouring, the two accents are melted and the thickness of the electrothermal alloy film melted at 1430 t in a vacuum is 1〇〇 # [Joining] The joint of the aluminum nitride plate and the heater of the electrostatic absorbing mechanism is also the same Si-25% Ti alloy as the electro-cure alloy. The joining system and the joining of the heater are performed simultaneously. Economy Printed by the Consumers' Cooperative of the Ministry of Standards and Standards of the People's Republic of China using bonding metal as the electrode {垔 极). Ί Test] Electrostatic absorption: Add a DC current of 70 volts between the electrode and the silicon wafer. The silicon wafer is sucked up. Heating: Start heating at normal temperature (20 t), the heater is conductive, and the surface of the wafer can be heated to 70 DC in 60 seconds. 5Π 热 之 on-OFF, can make the surface temperature of the political film ____39-This paper size applies Chinese national standards (C NS > A4 regulations ^ ΤΤΓ〇 > < 297 male thin j-444 2 1 〇 Α7 Β7 5. The description of the invention (4) is kept in the range of 700 t. ± 5 aC. It can be confirmed that the present invention can The silicon wafer is rapidly heated and kept uniform. Note. Example 9 (Structure: Structure of Figure 25) The structure of Example 8 joins the structure of the cooling mechanism. The electrostatic absorbing mechanism part and the ceramic heater are the same as those of Example S. The method is to manufacture. The electrothermal alloy uses Si-20% Zr alloy. It is bonded at 1 430 ° C in vacuum. The electrode system uses a bonding metal layer as a unipolar electrode. The structure of the cooling mechanism: the system is 10 mm wide and 0, 5 mm thick. The tungsten strip is wound into a vortex shape and pinched between two Φ 50 X It circle plates, and the two tungsten circle plates are welded with silver on the end face. The cooling system is water-cooled and air-cooled.

[接合冷郤機構] 氮化鋁加熱器與冷卻機構係以含T 1的銀焊料直接焊 接. 焊接時，爲達到氮化鋁加熱器與鎢的冶郤機構之間的 應力緩衝目的，將50%W-50%氮化鋁（體積％)的複合燒結 體的圍板Φ 50 X lmni挾在&間#接合之， 經濟部中央標準局員工消費合作社印製 (請先鬩讀背面之注意事項再填寫本頁) [試驗] 靜電毁著：於電極與矽片之間印加700V的直流電，將 誘電體陶瓷表面的2吋的矽片吸著起夾. 加熱：由0t開始加熱.將加熱器導電；於矽片的表 面可在2 5秒內加熱超過1 0 0 t . 冷卻：關掉盅熱器浚諾始進行芯冷.较片表面可在25 40 本紙張尺度適用中國國家梯準（CNS ) Α4規格（210Χ297公釐） 444210 A7 B7 五、發明説明（θ) 秒內冷卻至1 5 V . 保持：加熱器加熱與水冷同時倂用，可使矽片的表面 溫度保持在5〇 r二it範圍. 由此可確認到本發明可將矽片急速昇降溫且保持溫度 的均一毪. 實施例1 0 (構造：圖26的構造） 靜電啜著機構部：使用鎢電極膜於陶瓷的內部同時燒 成的氮化鋁圓板（厚度Φ 50 X CL2mm). 加熱機構：於上述電極膜內藏氮化鋁·板裏面（非吸 著側）的氮化鋁面®刷電熱合金（S i - 1 5%T 1合金）的電熱 回路，接著在印刷面上與氮化鋁扳{ Φ 50 X 1 ΐ )重合，於 真空_以1430 t溶融，並將電極膜内藏氮化鋁圓扳與氮 化鋁板融著.電熱合金膜的厚度約丨00 // m . 冷街機構的構造：於氧化鋁板（厚度Φ 50 X 2 5難）的罝 面，作旋渦狀的冷媒循環用溝的加工，並使甩由內部接 氧化鋁板（厚度Φ 5ϋ X 5nm)而焊接（氧化鋁焊接）的構造 的冷郤套管.[Joint cooling mechanism] The aluminum nitride heater and the cooling mechanism are directly welded with T 1 silver solder. During welding, to achieve the purpose of stress buffering between the aluminum nitride heater and the tungsten smelting mechanism, 50 % W-50% aluminum nitride (volume%) composite sintered body Φ 50 X lmni 挟 joint between &# Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the note on the back first) Please fill in this page again) [Experiment] Electrostatic destruction: 700V DC is printed between the electrode and the silicon wafer, and the 2-inch silicon wafer on the surface of the ceramic of the electromotive body is sucked and clamped. Heating: heating starts from 0t. Heating The device is electrically conductive; the surface of the silicon wafer can be heated for more than 100 t within 25 seconds. Cooling: Turn off the cup heater and start the core cooling. The surface of the wafer can be used at 25 40 This paper size is applicable to Chinese national standards (CNS) A4 specification (210 × 297 mm) 444210 A7 B7 V. Description of the invention (θ) Cool down to 15 V within seconds. Hold: Heater heating and water cooling can be used at the same time, which can keep the surface temperature of the silicon wafer at 50. r two it range. From this, it can be confirmed that the present invention can rapidly raise and lower the temperature of the silicon wafer and maintain the temperature. Example 10 (Structure: Structure of Figure 26) Electrostatic clamping mechanism part: Aluminum nitride circular plate (thickness Φ 50 X CL2mm) fired simultaneously inside the ceramic using tungsten electrode film. Heating mechanism: An electric heating circuit of an aluminum nitride surface® brushed electric heating alloy (S i-1 5% T 1 alloy) on the aluminum nitride and plate (non-adsorption side) is embedded in the electrode film, and then the printed surface is nitrided. The aluminum plate {Φ 50 X 1 ΐ) overlaps, melts in vacuum_ at 1430 t, and fuses the aluminum nitride circle plate embedded in the electrode film with the aluminum nitride plate. The thickness of the electrothermal alloy film is about 丨 00 // m. Cold The structure of the street mechanism: the surface of the alumina plate (thickness Φ 50 X 2 5) is processed as a vortex refrigerant circulation groove, and the aluminum oxide plate (thickness Φ 5ϋ X 5nm) is connected to the inside and welded ( Alumina welding) structured cooling jacket.

[接合冷郤機構] 經濟部中央標準局員工消費合作社印製 - ^^^1 —^n nn - 1 - 11 ^^^1 ml ^1J (請先閱讀背面之注意事項再填寫本頁) 爲達到氮化鋁加熱器與冷卻機構之間應力緩衝的目約： 浃著Mo板，氮化鋁加熱器與Mo、Mo與冷笛機·同時以 錮焊錫焊接.[Joint cooling mechanism] Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs-^^^ 1 — ^ n nn-1-11 ^^^ 1 ml ^ 1J (Please read the precautions on the back before filling this page) as To achieve the purpose of stress buffering between the aluminum nitride heater and the cooling mechanism: Hold the Mo plate, the aluminum nitride heater and Mo, Mo and the cold flute machine. At the same time, solder with 锢 solder.

[試驗] 靜電吸著：於電極與矽片之間印加700V的直流電，將 誘電體陶瓷表面的2对的矽片吸著起來. 41 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^ 444 2 1 Ο Α7 Β7 五、發明説明（1 ) 如熱：甶o°c開始加熱，將加熱器導電；於矽片的表 面可在25秒內加熱至loo t . 冷卻：關掉力U熱器後開始於鋁套管進行艰循環.矽片 表面可在50秒內冷卻至15 °C , 保持：加熱器加熱與水冷同時供用，可使矽Θ的表面 溫度保持在50 t 土 1 SC範圍. 虫此可確認到本發明可將矽片急速昇降溫且保持溫度 的均一性. 如以上所詳述，本發明的導電發熱體係因利用矽化 物、Si、或矽化物與S!釣混在組織的電熱材料膜，與陶 瓷基柯融著的複合構造的電熱材料，故可改良電熱村料 的脆弱性及高溫軟化的缺點，並由於薄膜化而有良好的 邡熱器被膜的密著強度、敵剝落性、在大氣中的抗氧化 性、耐急加熱及高溫邡熱、蹰久性，亦有構造簡單旦製 造成本泜的優點，在產業上乃是極有意義的發明. 經濟部中央標率局員工消費合作社印衆 (請先閱讀背面之注意事項再填寫本頁) X .本發明的靜電夾具係擁有能在極短的溫度週期. 使半導體基板表靣昇降溫的特徵，且可預期對於生產性 旳提昇、等離子及成膜處埕等旳品質提昇方面的莫大貢 獻. 42_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 4 44 2 1 0 a? ΐ 玉 _BZ_$ 泰？吟仏 五、發明說明（和） -———___ —- 【元件符號說明】 1 陶瓷基材 2 融著層 3 加熱回路 4 陶瓷基材 5 陶瓷基材 6 融著膜 7 溝 8 封閉回路 9 陶瓷小片 . 扣衣--------訂-------:!片 (請先閱讀背面之注意事項昇填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標单（CNS)A4規格（210 X 297公釐）[Experiment] Electrostatic adsorption: 700V direct current is printed between the electrode and the silicon wafer, and two pairs of silicon wafers on the surface of the ceramic ceramic are attracted. 41 This paper size applies Chinese National Standard (CNS) A4 specification (210X297) (Centimeter) ^ 444 2 1 〇 Α7 Β7 V. Description of the invention (1) If the heat: 甶 o ° c starts heating, the heater is conductive; the surface of the silicon wafer can be heated to loot within 25 seconds. Cooling: turn off After the U heater was started, the aluminum tube was subjected to a difficult cycle. The surface of the silicon wafer can be cooled to 15 ° C in 50 seconds. Keep: The heater is heated and water cooled at the same time, which can keep the surface temperature of silicon Θ at 50 t soil. 1 SC range. It can be confirmed that the present invention can rapidly raise and lower the temperature of the silicon wafer and maintain the uniformity of the temperature. As described above, the conductive heating system of the present invention uses silicide, Si, or silicide and S! The electric heating material film mixed in the tissue, and the electric heating material with a composite structure fused with ceramics, can improve the fragility of electric heating materials and the disadvantages of high temperature softening, and because of the thin film, it has a good heat sink film density. Strength, exfoliation, It has the advantages of oxidation resistance, rapid heating resistance, high-temperature heat resistance, and long-term durability. It also has the advantages of simple structure and manufacturing cost. It is a very meaningful invention in the industry. Read the notes on the back and fill in this page) X. The electrostatic fixture of the present invention has the characteristics of being able to heat and cool the surface of the semiconductor substrate in a very short temperature cycle, and it is expected that productivity, plasma, and film formation can be improved. Great contribution to the improvement of quality. 42_ This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297mm) 4 44 2 1 0 a? Ϊ́ 玉 _BZ_ $ Thai? Yin Yin 5. Description of the invention (and) -————___ —- [Explanation of the symbol of the component] 1 Ceramic substrate 2 Fusion layer 3 Heating circuit 4 Ceramic substrate 5 Ceramic substrate 6 Fusion film 7 Groove 8 Closed circuit 9 Ceramic pieces. Buttons -------- Order ------- :! (please read the precautions on the back and fill in this page first) Printed on paper scale Applicable to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

444 2 1 〇 • ..-111 I 11 丄1---------至公告本 A8 B8 C8 D8 六、申請專利範圍 的氮 物單 3斤影 2 , 陶瓷 織係 的阻 3 . 其中 微組 4 . 其中 的微 經濟部中央揉準局貝工消費合作社中策 一種導電發熱體裝置，其特徴爲具備：於絕緣性 化物系或碳化物系陶瓷基材的表靣s微組織係矽化 體組織、矽化物與S!的混在組織、或由Si單體組織 成的祖抗發熱材料旳被膜，m融著的搆造. 一種導電發熱體裝置，其特徵爲具備：絕緣馇的 基材表面係含有0 . 5%以.π的活倥金屬，而且，微耝 W化物單體組織或虫矽化物與Si的混在組織所影成 抗發熱轲料的被膜，珩融著的_造， 範圍第1或2項所述之導電發熱體裝置 ,工述㈤S #係氮化鋁系陶瓷，證沆發熱紂料的 織係^1¾¾ Si的混在铠織. 依範圍第1或2項所述之導電發熱體裝置， ，上述ΗΜ'Μ材係氮化矽素系陶瓷，阻抗發熱柯料 組織係與s!的混在組織. 範圍第1或2項所述之導電發熱體裝置， 村係碳化矽素系陶瓷，阻抗發熱材料 (請先閲讀背面之注意事項再填寫本頁)444 2 1 〇 • ..- 111 I 11 丄 1 --------- to the announcement A8 B8 C8 D8 VI. Patent application scope of nitrogen compound 3 Jin Ying2, ceramic weaving resistance 3. Among them, the micro group 4. Among them, the Ministry of Microeconomics, the Central Bureau of Standards, Kazumi Shell Cooperative Consumer Cooperative Co., Ltd. is a conductive heating element device, which is characterized in that it is provided with: a microstructure system on an insulating or carbide ceramic substrate A silicide structure, a mixed structure of silicide and S !, or an ancestral heat-resistant material consisting of a single Si material, a coating, and a m-fused structure. A conductive heating element device, which is characterized by: The surface of the material contains 0.5% of active metal, and the microstructure of a single compound or a mixed structure of worm silicide and Si forms a heat-resistant coating, which is melted. ， The conductive heating device described in the first or second range of the scope, the work description ㈤S # series aluminum nitride-based ceramics, the 沆 system of the heating material ^ 1¾¾ Si mixed in armor weaving. According to the first or second range of the institute The conductive heating element device described above is a mixture of the above-mentioned TIM'M material-based silicon nitride-based ceramics, resistance heating material structure, and s! In the organization. Scope of the conductive heating device described in item 1 or 2, village-based silicon carbide ceramic, resistance heating material (please read the precautions on the back before filling this page) 依 ，上述 組織係矽化物與S i的混在組織. 依€ 範圍第2項所述之導電發熱體裝置. ，上述P 材係氧化物系陶瓷\ 依^範圍第6項所述之導電發熱體裝置， ，上述氧化物系陶瓷係氧化鋁陶瓷，阻抗發熱Ιί料 粗織係矽化物組織. S. 一種靜電夾具裝置，其特徵爲：具備誘電體陶瓷 與該陶瓷的底面m髟成的電極之靜電吸著機搆底面，結 其干 的微 6 . 其CP 7 . 其中 的微 本紙張尺度逋用中國國家揉车（CNS ) A4规格（2!0X297公釐） 其中，上述 化鋁系陶瓷i 11 篏範圍第10項所述之靜電夾II裝置， 其中，上述電熱材料爲微組織係矽化物與S!.的混在組織 的金屬. 444 2 1 Ο Α8 Β8 C8 D8 申請專利範圍 合加熱機構的構造，該加熱機構係絕緣性，在線膨脹係 數相同或近似的二枚陶瓷基材之間，挾著與該陶瓷有融 著性的電熱材料膜，該膜係與該二枚基材溶融融著的構 J-B. · 9. 一種半導體基板的靜電夾具裝置.其特徵爲：具 備誘電體陶瓷與該陶瓷的底面所形成的電極之靜電吸著 機構底面，結合加熱機構，在加熱機構旳底面結合冷卻 機構的構造，該如熱機構係絕緣性，在線膨脹係數相同 或近似的二枚陶瓷基材之閭.挟著與該陶瓷有融著性的 電熱材料膜，該膜係與該二枚基枋溶融融著的構造. 1 0 .依範圍第S或9項所述之靜電夾具裝置， b陶瓷與加熱機搆的二枚陶瓷基材係氮 校1 丨訂^ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標率（CNS ) A4規格（210 X 297公釐）According to the above, the above-mentioned structure is a mixed structure of silicide and Si. The conductive heating element device according to the second item of the € range. The conductive material of the P-based oxide ceramics according to the sixth item of the ^ range. A device, wherein the above-mentioned oxide-based ceramic-based alumina ceramic has a resistance to heat generation and a coarse-grained silicide structure. S. An electrostatic fixture device characterized by comprising an electrode formed by an electrolyzer ceramic and a bottom surface m of the ceramic The electrostatic absorption mechanism bottom surface, and its dried micro 6. CP 7. The micro paper size is in Chinese National Rolling Mill (CNS) A4 size (2! 0X297 mm) Among which, the above-mentioned aluminum-based ceramics i 11静电 The electrostatic clamp II device according to item 10 of the scope, wherein the above-mentioned electrothermal material is a metal of microstructure type silicide and S !. mixed metal. 444 2 1 〇 Α8 Β8 C8 D8 Patent application scope and structure of heating mechanism The heating mechanism is insulating, and between two ceramic substrates having the same or similar linear expansion coefficient, there is an electrothermal material film that is fused with the ceramic, and the film is fused with the two substrates. JB. 9. An electrostatic clamping device for a semiconductor substrate, characterized in that: the bottom surface of an electrostatic attraction mechanism provided with an electrode formed by an electrolyzer ceramic and the bottom surface of the ceramic is combined with a heating mechanism, and a structure of a cooling mechanism is coupled to the bottom surface of the heating mechanism. The mechanism is one of two ceramic substrates with insulating properties and the same or similar coefficient of linear expansion. It holds a film of electrothermal material that is fused to the ceramic, and the film is fused to the two substrates. 1 0. According to the electrostatic fixture device described in the item S or 9 of the scope, b. The two ceramic substrates of the ceramic and heating mechanism are nitrogen calibration 1 丨 Order ^ (Please read the precautions on the back before filling this page) Central of the Ministry of Economic Affairs Standards Bureau employee consumer cooperatives print this paper to apply China National Standards (CNS) A4 specifications (210 X 297 mm)