TW444119B

TW444119B - Surface pattern unevenness detecting method and apparatus

Info

Publication number: TW444119B
Application number: TW87111572A
Authority: TW
Inventors: Shigeru Yamamoto
Original assignee: Odp Co Ltd
Priority date: 1997-04-23
Filing date: 1998-07-16
Publication date: 2001-07-01

Abstract

A surface pattern unevenness detecting method for inspecting pattern unevenness comprising the steps of: (a) irradiating a light onto a substrate on the surface of which a pattern is formed and; (b) observing a scattered light from edge portions of said pattern by means of a CCD line sensor having a sensitivity of at least 100 V/μJ/cm<SP>2</SP> near a peak quantum efficiency (700 nm), wherein the angle (θS) formed between a light receiving plane of said CCD line sensor and an optical axis of a lens system condensing the scattered light onto said light receiving plane is equal to, or larger than, the angle (θ) formed between said optical axis and said substrate, and is smaller than 90 DEG, i.e., 90 DEG > θS ≥ θ.

Description

^浐部中夾Α?^-ΛΆ工消价合作^·ι卬?i 444 1 19 A7 B7 五、發明说明（/ ) 發明背景本發明關於通常地使用行感測攝影機用於檢測表面圖式不均勻性之方法及裝置。更特別地，本發明關於表面圖式不均勻性檢測方式及裝置’其允許實際使用在液晶顯示器（液晶TFT基質）或多矽TFT基質之製造。當製造液晶顯示器（液晶TFT基質），例如應用光倉虫刻過程包括暴露基質的步驟是必須的，其基質包括玻璃支撐架、金屬（C〇層及藉由曝光單元所規劃影像之抗蝕層，而且隨後發展該曝光的抗蝕層，因此準備規劃的抗蝕圖式。在此點，視覺檢測藉由使用廣光源所實行檢查曝光單元之運轉是否正常。特別重要檢測項目之一是檢測由曝光單元.之異常聚焦所引起在抗蝕層之曝光不均勻性。習知技術中，自動地獲得在基質表面之抗蝕圖式的觀察影像是困難的。因此習知操作以決定暴露不均勻性程度藉由發射單色光在基質上而且視覺地觀察従抗蝕圖式之抗蝕邊緣的反射光β根據該操作，然而藉由手動運轉之功能檢測導致相當的分散，而且再者近來TFT基質朝向較大尺寸之傾向係使得執行視覺檢測困難的。因此增加對於曝光不均勻性檢測自動化之需求。在上述環境下，設法獲得在基質1之影像，其係如圖 1所顯示藉由二維CCD感測攝影機所檢測之靜止目標。在此組態中，藉由對角地配置在基質1末端之.二維CCt)感測攝影機10所獲得之影像藉由發射來自光源20之光線，其本纸张尺度適中囤國家榇準（CNS ) A4規格（2IOX297公釐） ---------^裝— (#先閱讀背面之注意事項再填路本頁} 、1Τ —ϋ 444 1 19 A 7 B7 五、發明説明（乂）對角地在基質i之另一端具有抗蝕圖式在表面經由菲涅爾透鏡21及白分散平板22在基質上。然而，因爲此組態允許只有窄角度範圍內曝光不均勻性之觀察，當滿足觀察係可能的對於基質影像1G之中心里分實質上相對於顯示器1〇〇之中心部分，充分聚焦在頂部及底部未端部分是不可獲得的。對於被檢測之較大尺寸基質1，因此觀察基質1之全部表面的不均勻性是不可能的。爲獲得對於全部螢幕之令人滿意的聚焦，可想像的方法是包括感測器攝影機10之影像形成平面，該攝影機具有聚焦系統Π及感測器12以一角度（（2)分開，以方向其中感測器12之接收平面離開被檢測的基質，如圖2所顯示。然而，這測量不可接受的因爲該顯示器100螢幕之頂端及底端的扭曲變較大，如圖3所顯示。發明摘要本發明具有目的提供一偵測被檢測物體之表面圖式不均勻性方法及裝置’接收光輻射線，較佳地藉由線感測器使用。本發明之另一目的係提供表面圖式不均勻性檢測方法及裝置’其有效地應用於檢測抗蝕圖式在液晶顯示器平板 C液晶TFT基質）之製造’允許不只檢測由曝光單元所引起之曝光不均勻性’而且檢測在抗蝕圖式之缺陷，而且進一步允許在多矽TFT基質製造之雷射退火的輻射不均勻性檢測。本紙张尺度適/ΙΪ中國國家標苹（CNS ) A4規格（210X297公釐） ^衣— (諳先閱讀背面之注意事項再填寫本頁) -*11 άτ, y 444 1 1 9 A7 B7 五、發明説明（4 ) 該先前目的可被達成藉由本發明之表面圖式不均檢測方法及裝置的使用β總之，本發明係關於用來檢鸯_ 式不均勻性之表面圖式不均勻性檢測方法藉由輻射光糠在具有形成圖式之基質，而且通過藉由CCD行感測器之檢猶j 觀察來自該圖式之邊緣部分的發散光線，該感測器具有$ 少100V/；cU/Cm2接近該峰値量子效率（7〇Onm)。例如， TDI (時域積分）式感測器係適合地可應用如前述線感鲫键〇在本發明中，介於前述CCD行感測器之光接收平面及集中散射光進入光接收平面之聚焦系統之光軸間之角度（ 0S)係等於，或大於介於光軸及基質間之角度（0)，而且大於 90° ，即 90° >0S 30。根據本發明之另一方面，提供表面式不均勻性檢測裝置包括對角地配置在基質側邊上而且以規定第一角度（經"部中夾^^^只^消於合作^印繁 )至基質之水平面發散一光線至基質上之光源’而且第一感測攝影機設備檢測圖式不均勻性藉由觀察該光線以第二角（θ2)至基質之水平面進入感測設備，掖散射在基質表面之圖式之邊緣部分，其中該前述第二角（Θ2)係大於第 —角度（〜），即。再者，本發明裝置可被提供第二感測攝影機設備’其檢測在基質表面圖式之缺陷藉由同軸向下照明使用’其藉由半透明反射鏡被配置鄰近該先前光源所製造° 本發明裝置中，該先前第一及第二攝影.機設備較佳地將有CCD行慼測器具有至少lOOV/jaJ/cm2接近峰値鼇子效 ___5 ____________" 本紙张尺度適/1] t國國家標準（CNS ) A4規格（2丨0X297公釐）^ 浐中中 Α? ^-ΛΆ 工消 valence cooperation ^ · ι 卬? I 444 1 19 A7 B7 V. Description of the invention (/) BACKGROUND OF THE INVENTION The present invention relates to the use of a line-sensing camera for detecting surface patterns. Method and device for non-uniformity. More specifically, the present invention relates to a surface pattern non-uniformity detection method and device 'which allows practical use in the manufacture of a liquid crystal display (liquid crystal TFT substrate) or a polysilicon TFT substrate. When manufacturing a liquid crystal display (liquid crystal TFT substrate), for example, the application of light worming process includes the steps of exposing the substrate. The substrate includes a glass support, a metal (C0 layer, and a resist layer of the image planned by the exposure unit). And then develop the exposed resist layer, so prepare a planned resist pattern. At this point, visual inspection is performed by using a wide light source to check whether the operation of the exposure unit is normal. One of the most important inspection items is the inspection by Exposure unevenness of the resist layer caused by the abnormal focus of the exposure unit. In the conventional technique, it is difficult to automatically obtain the observation image of the resist pattern on the surface of the substrate. Therefore, it is a conventional operation to determine the exposure unevenness. The degree of performance is based on this operation by emitting monochromatic light on the substrate and visually observing the reflected light of the resist edge of the 従 resist pattern. However, considerable functional dispersion has been caused by manual function detection, and more recently TFT The tendency of the substrate to face larger sizes makes it difficult to perform visual inspection. Therefore, there is an increased need for automated exposure unevenness detection. Under the above environment, try to obtain an image on the substrate 1, which is a stationary target detected by a two-dimensional CCD sensing camera as shown in Fig. 1. In this configuration, diagonally arranged at the end of the substrate 1 . Two-dimensional CCt) The image obtained by the sensing camera 10 emits light from the light source 20, the paper size of which is moderate, and the national standard (CNS) A4 specification (2IOX297 mm) --------- ^ 装 — (#Read the precautions on the back before filling this page}, 1T—ϋ 444 1 19 A 7 B7 V. Description of the invention (乂) There is a resist pattern diagonally on the other end of the substrate i. The Fresnel lens 21 and the white dispersion plate 22 are on the substrate. However, because this configuration allows observation of exposure unevenness within a narrow range of angles, when the observation system is possible, the center division of the substrate image 1G is substantially opposite. In the center portion of the display 100, it is not available to fully focus on the top and bottom end portions. For the larger-sized substrate 1 to be detected, it is impossible to observe the unevenness of the entire surface of the substrate 1. Get for all fireflies For satisfactory focusing, a conceivable method is to form a plane including the image of a sensor camera 10 having a focusing system Π and the sensors 12 separated at an angle ((2) and oriented toward the sensor 12 therein). The receiving plane leaves the substrate to be detected, as shown in Fig. 2. However, this measurement is unacceptable because the distortion at the top and bottom of the screen of the display 100 becomes larger, as shown in Fig. 3. SUMMARY OF THE INVENTION The present invention has the purpose to provide A method and device for detecting surface pattern non-uniformity of a detected object 'receiving light radiation, preferably used by a line sensor. Another object of the present invention is to provide a surface pattern non-uniformity detection method and The device 'which is effectively applied to the detection of resist patterns in the liquid crystal display panel C liquid crystal TFT substrate)' allows to detect not only the exposure unevenness caused by the exposure unit 'but also the defects in the resist pattern, and further Allows for radiation non-uniformity detection for laser annealing on polysilicon TFT substrates. The size of this paper is suitable for China National Standard Apple (CNS) A4 (210X297 mm) ^ — — (谙 Please read the notes on the back before filling this page)-* 11 άτ, y 444 1 1 9 A7 B7 V. Description of the invention (4) The previous object can be achieved by using the surface pattern unevenness detection method and device of the present invention. In short, the present invention relates to the detection of surface pattern unevenness for detecting pattern unevenness. Methods The substrate is formed by radiating light with a pattern, and the divergent light from the edge portion of the pattern is observed by inspection by a CCD line sensor. The sensor has a value of less than 100V /; cU / Cm2 is close to the peak 値 quantum efficiency (700 nm). For example, a TDI (time domain integration) type sensor is suitably applicable to the aforementioned linear sensing key. In the present invention, the light receiving plane between the aforementioned CCD line sensor and the concentrated scattered light enters the light receiving plane. The angle (0S) between the optical axes of the focusing system is equal to or greater than the angle (0) between the optical axis and the substrate, and is greater than 90 °, that is, 90 ° > 0S 30. According to another aspect of the present invention, a surface-type unevenness detection device is provided, which is arranged diagonally on the side of the substrate and at a prescribed first angle (by ^^^ 中只中消消合作 ^ 繁繁) The horizontal plane to the substrate emits a light to the light source on the substrate 'and the first sensing camera device detects the pattern non-uniformity by observing that the light enters the sensing device at a second angle (θ2) to the horizontal plane of the substrate, and the radon is scattered in the The edge portion of the pattern on the surface of the substrate, wherein the aforementioned second angle (Θ2) is larger than the first angle (~), that is ,. Furthermore, the device of the present invention can be provided with a second sensing camera device 'which detects defects on the surface of the substrate and is used by coaxial downward lighting' which is manufactured by a semi-transparent mirror disposed adjacent to the previous light source. In the device of the invention, the previous first and second cameras. Preferably, the camera device will have a CCD line detector with at least lOOV / jaJ / cm2 close to the peak effect. ___5 ____________ " The paper size is suitable / 1] t National Standard (CNS) A4 Specification (2 丨 0X297 mm)

7 7 A B 烀"-部中夾榀導^^.工消贤^作^卬鲈 444 1 1 9 五、發明説明（屮）率（nm)之靈敏性，或較佳地該（XJD行感測器是時域積分（TDI)形式感測器。而且在本發明之裝置，介於前述CCD行感測器之光接收'平面及集中散射光進入光接收平面之聚焦系統之光軸間之角度〔（9S)係等於，或大於介於光軸及基質間之角度（ 0 )而且大於 ’ 即 90° $ s g Θ。根據本發明裝置之實施例，該裝置具有形成的組態藉由附接一固定連桿至安裝基質之基質支撐基座，形成平行運動機構具有搖動連桿以固定連桿末端搖動當作支點，而且附接該第一感測器攝影機設備之感測器至可移動連桿，被提供相對於該平行運動機構之固定連桿。根據另一實施例’該裝置可形成藉由可搖動地附接一長及細支撐之末端至安裝基質之基質支撐基座，轉動地提供滑輪在長及細支撐之末端附接至基質支撐基座及另一末端，形成平行運動機構藉由以皮帶連接兩個滑輪，而且附接該第一感測器攝影機設備之感測器至在平行運動機構之另一末端的滑輪。圖式簡單說明圖1係檢測裝置之槪略組態圖式，該裝置說明使用二唯CCD感測器之習知影像獲取方法；圖2係當感測器傾斜時聚焦之說明圖；圖3係當感測器傾斜時監視器螢幕之說明圖；圖4係本發明之表面圖式不均勻性檢測方法之說明圖圖5係對於偵測傾斜物體之感測器影像獲取之說明圖中國國家標準-(CNS〉A4规格（2iOX297公釐） (請先閲讀背面之注意事項再填寫本頁)7 7 AB quot " -Guide in the middle ^^. 工消贤 ^ 作 ^ 卬 Sea bass 444 1 1 9 V. Description of the invention (屮) Sensitivity of the rate (nm), or better (XJD line The sensor is a sensor in the form of time domain integration (TDI). Moreover, in the device of the present invention, it is between the optical axis of the light receiving 'plane of the aforementioned CCD line sensor and the focusing axis of the focusing system where the scattered light enters the light receiving plane. The angle [(9S) is equal to or greater than the angle (0) between the optical axis and the substrate and is greater than '90 ° $ sg Θ. According to an embodiment of the device of the present invention, the device has a formed configuration by Attach a fixed link to the substrate support base of the mounting substrate to form a parallel motion mechanism with a rocking link to use the end of the fixed link as a fulcrum, and attach the sensor of the first sensor camera device to The moving link is provided with a fixed link relative to the parallel motion mechanism. According to another embodiment 'the device can form a substrate support base by swingably attaching a long and thinly supported end to the mounting substrate, Rotate the pulley to attach at the end of the long and thin support The substrate supports the base and the other end to form a parallel movement mechanism by connecting two pulleys with a belt, and attaching the sensor of the first sensor camera device to the pulley at the other end of the parallel movement mechanism. Brief description of the formula: Figure 1 is a schematic configuration diagram of a detection device, which illustrates a conventional image acquisition method using an Ericsson CCD sensor; Figure 2 is an illustration of focusing when the sensor is tilted; Figure 3 is An explanatory diagram of the monitor screen when the sensor is tilted; Figure 4 is an explanation of the surface pattern non-uniformity detection method of the present invention; Figure 5 is an explanation diagram of the sensor image acquisition for detecting a tilted object; Chinese National Standard -(CNS> A4 specification (2iOX297mm) (Please read the precautions on the back before filling this page)

4 44 1 19 經來'部中火ί.ί^-Λ-Μχ消*:分 ΐ i. pi. A7 B7 五、發明説明（r) r 圖6係當觀察經由感測器攝影機設備之傾斜物驗偵測說明監視器螢幕；圖7係說明TDI感測器之結構；圖8係點影像範圍之說明視圖，當觀察經由感_器攝影機設備之傾斜物體偵測；圖9係點影像範圍之說明視圖，當觀察經由慼測器攝影機設備之傾斜物體偵測，如上所見；圖10係說明形成在該感測器之位移的說明圖，當觀察經由感測器攝影機設備之傾斜物體偵測；圖11係免除不淸晰不均勻性以上/下方向在感測器表面之光學裝置的說明圖，當觀察經由感測器攝影機設備之傾斜物體偵測；圖12係免除不淸晰不均勻性之最佳光學裝置的說明圖，當觀察經由感測器攝影機設備之傾斜物體偵測；圖13係檢測裝置之槪略組態圖式，該裝置可同時地檢 .測曝光不均勻性及本發明之缺點；圖14係該感測器係由平行運動機構所支撐之實施例的說明圖式；而且圖15係該感測器係由平行運動機構所支撐之另一實施例的說明圖式。發明詳細描述本發明之表面圖式不均勻性檢測方法及裝置將參考圖式進一步詳細描述。本發明係可有效地應用於曝先不均句 ___7_ __ 本紙張X度適则7國國家標率（CNS)M規格<210X297公楚） ---------^裝------#------Vi. (諳先閱讀背面之注意事項再填窩本頁)4 44 1 19 Jing Lai 'Ministry of Fire ί ^ -Λ-Μχ 消 *: Divided i. Pi. A7 B7 V. Description of the invention (r) r Figure 6 shows the tilt of the camera equipment through the sensor Physical inspection description monitor screen; Figure 7 illustrates the structure of the TDI sensor; Figure 8 is an explanatory view of the point image range when observing the tilted object detection through the sensor camera device; Figure 9 is the point image range In the explanatory view, when observing the tilted object detection via the camera device of the sensor, as seen above; FIG. 10 is an explanatory diagram illustrating the displacement formed on the sensor, when observing the tilted object detection through the camera device of the sensor Figure 11 is an illustration of an optical device that is free from unclear unevenness on the sensor surface in the up / down direction when observing the detection of a tilted object through the sensor camera device; Figure 12 is free of unclear unevenness An illustration of the optimal optical device when viewing oblique object detection through a sensor camera device; Figure 13 is a schematic configuration diagram of the detection device, which can simultaneously detect exposure unevenness and Disadvantages of the present invention; Figure 14 shows this feeling The sensor is an explanatory diagram of an embodiment supported by a parallel motion mechanism; and FIG. 15 is an explanatory diagram of another embodiment of the sensor supported by a parallel motion mechanism. Detailed description of the invention The method and apparatus for detecting the unevenness of a surface pattern of the present invention will be described in further detail with reference to the drawings. The present invention can be effectively applied to the first uneven sentence ___7_ __ The paper X degree is appropriate and the national standard rate (CNS) M specifications of 7 countries < 210X297 public Chu) --------- ^ 装- ----- # ------ Vi. (谙 Read the precautions on the back before filling this page)

444 1 1 9 A7 __ B7________ 五、發明说明（& ) 性之檢測藉由曝光單元，例如液晶TFT基質之製造而且進一步，用於輻射不均勻性之檢測在雷射退火，當製造多矽 TFT基質。以下描述實施例將包括本發明應用之案例用於曝光不均勻性之檢測，其由曝光單元所引起，當液晶TFT 基質製造時。實施例1 首先，本發明之曝光不均勻性檢驗之原理參考圖4將描述。更明確地，根據本發明，當液晶TFT基質製造時，具有透過光蝕刻過程形成在表面之抗蝕圖式之基質1水平地被放置在檢驗裝置之基質支撐基座200。也就是，在光蝕刻過程中，一規劃影像藉由曝光單元被暴露於基質之抗蝕層，該基質包括玻璃支撐架，一金屬（Cr)層、及抗蝕層而且隨後該曝光層係被發展的，因此形成一規劃抗蝕圖式在基質表面上。該邊緣部分形狀以分散方式變化在聚焦錯誤之效果下由該抗蝕層下薄膜厚度不均句性或纏繞的微粒所引起。光源20係配置於基質1側邊上，該基質被放置在基質支撐基座200，具有透鏡光學系統11及感測器12之感測器攝影機設備10被配置於另側上方。該光源20以規劃第 —角度（00發射一光線至基質1之水平平扳。熟知廣角光源（線性光源）譬如線性日光燈之長及細光源係適合當作光源20 〇該光源20應該適當地被配置在基質之寬度方向，即在圖4以便從近至遠端延伸。雖然沒有特別限制在該先源20之波長’較佳地具有波長600至9〇〇nnj之範圍 ______ _______ 本紙張又度通Λ中由ij家標隼（CNS ) Α4規格（2]〇Χ297公釐厂 "一 ---------^装------1Τ------俸. (請先閲讀背面之注意事項再填寫本頁)444 1 1 9 A7 __ B7________ V. Description of the invention (&) Detection by exposure unit, such as the manufacture of liquid crystal TFT substrate and further, for the detection of radiation non-uniformity in laser annealing, when manufacturing polysilicon TFT Matrix. The following description of the embodiment will include a case including the application of the present invention for the detection of exposure unevenness, which is caused by an exposure unit when a liquid crystal TFT substrate is manufactured. Example 1 First, the principle of the exposure unevenness test of the present invention will be described with reference to FIG. 4. More specifically, according to the present invention, when the liquid crystal TFT substrate is manufactured, the substrate 1 having a resist pattern formed on the surface through a photo-etching process is horizontally placed on the substrate supporting base 200 of the inspection device. That is, during the photo-etching process, a planning image is exposed to a resist layer of a substrate by an exposure unit, the substrate including a glass support frame, a metal (Cr) layer, and a resist layer, and the exposure layer is subsequently It is developed, thus forming a planned resist pattern on the substrate surface. The shape of the edge portion changes in a dispersed manner and is caused by uneven thickness or entangled particles of the film under the resist under the effect of focusing error. The light source 20 is disposed on the side of the substrate 1, the substrate is placed on the substrate supporting base 200, and the sensor camera device 10 having the lens optical system 11 and the sensor 12 is disposed above the other side. The light source 20 emits a light at the planned first angle (00 to the level of the substrate 1. The well-known wide-angle light source (linear light source) such as the length of a linear fluorescent lamp and a thin light source are suitable as the light source 20. The light source 20 should be appropriately It is arranged in the width direction of the substrate, that is, in FIG. 4 so as to extend from near to far. Although the wavelength of the source 20 is not particularly limited, it preferably has a range of wavelengths from 600 to 900. Dutong Λ by the ij family standard (CNS) Α4 specifications (2) 〇297297 mills " a --------- ^ equipment ------ 1T ------ 俸. (Please read the notes on the back before filling this page)

.後是否Ϊ:更原實經濟部智慧財產局員工消費合作杜中贤 444 119 jf & 吖. A7 . __—____B7_——〜·‘- ; 五、發明說明（7 ) 關於以後描述之感測器攝影機設備10。CCD行感測器可使用當作感測器12。在先前組態中，當光線從光源被發射以第一角度（Θ, )至基質1表面之抗蝕圖式上，進入該抗蝕圖式之上表面形成平行該基質之水平平面之光源係以規劃角度被反射。在基質表面之不均与性壓力導致分散在抗蝕圖式之邊緣部分之不同方式。根據本發明，該組態係以至於感測器攝影機10觀察，不是由該抗蝕圖式之平坦表面部分直接地反射之光線’但是該散射光線已經以邊緣圖式所散射而且以第二角度（Θ2)進入感測器12。從收集該散射光之觀點，該第二角度（02)可小於第一角度（0,)。爲減小不淸晰不均勻性而且獲得令人滿意的影像，然而該第二角度（02) 將較佳地大於該第一角度（D 在本發明中，如上所述，檢測在邊緣部分之改變藉由只捕捉來自該抗蝕圖式之邊緣部分的散射光線由具有CCD 行感測器12之感測器攝影機設備1〇。然而，因爲該散射光係遠較直接散射光爲弱，期望使用，如行感測器12、時域積分（TDI)形式感測器具有至少1〇〇之高靈敏性，例如4〇OV//zJ/cm2接近峰値量子效率（ 700nm)。另一方面’該感測器攝影機設備10具有，例如Tm 感測器通常係與聚焦系統Π及感測器12平行配置，如顯不方< 圖5 因此，虽f守到基質1之影像，檢查物體被配置對角地至感測器攝影機10而且以箭頭方向取代，模糊不均勻性發生在顯示於圖6之影像1G之末端1Ga及1Gb兩者 9 ^紙張足度適用_國國家標準（‘CNi)A4規格（210 X 297公髮) ——------ — Kill - - I-----^ ,r I I I I - I I) (請先閱讀背面之注意事項再填寫本頁).Whether it is later: Consumers 'cooperation with the Intellectual Property Bureau of the Ministry of Economic Affairs Du Zhongxian 444 119 jf & A. A7. ________ B7 _—— ~ ·'- Camera equipment 10. A CCD line sensor can be used as the sensor 12. In the previous configuration, when light was emitted from the light source at a first angle (Θ,) onto the resist pattern on the surface of substrate 1, the light source system that entered the upper surface of the resist pattern to form a horizontal plane parallel to the substrate Reflected at a planned angle. The unevenness and sexual pressure on the surface of the substrate result in different ways of being scattered on the edge portion of the resist pattern. According to the invention, the configuration is such that the sensor camera 10 observes the light, which is not directly reflected by the flat surface portion of the resist pattern, but the scattered light has been scattered by the edge pattern and at a second angle (Θ2) enters the sensor 12. From the viewpoint of collecting the scattered light, the second angle (02) may be smaller than the first angle (0,). In order to reduce the blur and non-uniformity and obtain a satisfactory image, however, the second angle (02) will preferably be larger than the first angle (D in the present invention, as described above, the It is changed by capturing only scattered light from the edge portion of the resist pattern by a sensor camera device 10 having a CCD line sensor 12. However, since the scattered light is much weaker than directly scattered light, it is desirable Use, such as line sensor 12, time-domain integral (TDI) form sensor has a high sensitivity of at least 100, such as 40OV // zJ / cm2 close to the peak 値 quantum efficiency (700nm). 'The sensor camera device 10 has, for example, a Tm sensor is usually arranged in parallel with the focusing system Π and the sensor 12, as shown in Fig. 5 Therefore, although f is stuck to the image of the substrate 1, check the object It is arranged diagonally to the sensor camera 10 and replaced with the direction of the arrow. Blur unevenness occurs at the end of the image 1G shown in Figure 6 at both 1Ga and 1Gb. 9 ^ Applicability of paper sufficiency_National Standard ('CNi) A4 specifications (210 X 297 public) ------------ Kill-- I ----- ^, r I I I I-I I) (Please read the notes on the back before filling this page)

444 1 1 9 A7 B7 經濟部智慧財產局員工消費合咋五、發明說明（f) 0 現今’這類模糊不均勻性及解析設備之原因以下將被描述。該TDI感測器12，其係一維行感測器，具有一範圍也以直角方向至用於收集光能量之感測器資料之感測方向。如顯示圖8，因此當感測器攝影機設備10被對角地配置至被檢查之基質’其係檢査之物體1，而且假如聚焦系統 11及感測器12被平行配置，至物體1之距離與介於該感測器12之上及下端間不相同，以至於聚焦在感測器中心導致於在上及下端之模糊不均勻性。模糊不均勻性之範圍係，當使用商業上可獲得F2.8-60nm透鏡當作聚焦系統11，在感測器U表面之點影像範圍涵蓋大約兩個圖彤元素假設 13/zm之感測器像素大小。假設’在圖8中，垂直寬度1.2mm之感測器，距離S 至物體1是600mm而且介於光軸及物體1之角度（Θ )爲 45 ° ，則介於聚焦系統及感測器光接收平板間距離將 66.7mm，而且因爲h< < S : dl=d2 = 5.4mm，而且 D=21mm，而且在感測器頂端及底端該點影像之範圍將如下所示：444 1 1 9 A7 B7 Consumption of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of invention (f) 0 Nowadays, the reason for such fuzzy inhomogeneity and analysis equipment will be described below. The TDI sensor 12, which is a one-dimensional line sensor, has a sensing direction ranging from a right-angle direction to a sensor data for collecting light energy. As shown in FIG. 8, when the sensor camera device 10 is arranged diagonally to the inspected substrate, it is the object 1 to be inspected, and if the focusing system 11 and the sensor 12 are arranged in parallel, the distance to the object 1 and The difference between the upper and lower ends of the sensor 12 is such that focusing on the center of the sensor results in fuzzy unevenness at the upper and lower ends. The range of blur heterogeneity is that when a commercially available F2.8-60nm lens is used as the focusing system 11, the image range of the point on the surface of the sensor U covers approximately two image elements, assuming 13 / zm of sensing Pixel size. Assuming 'in Figure 8, a sensor with a vertical width of 1.2mm, the distance S to object 1 is 600mm and the angle (Θ) between the optical axis and object 1 is 45 °, then it is between the focusing system and the sensor light The distance between the receiving plates will be 66.7mm, and because h < < S: dl = d2 = 5.4mm, and D = 21mm, and the image range of the point at the top and bottom of the sensor will be as follows:

21 +66.7X :0.021 (mm) 60_600 60*605.4. --21( β m) (請先聞讀背面之注§項再填寫本頁)21 + 66.7X: 0.021 (mm) 60_600 60 * 605.4. --21 (β m) (Please read the note § on the back before filling this page)

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 444119 A7 B7 五、發明説明（1 ) 當從對角位置射擊該物體i之影像’影像扭曲產生於感測器12之右及左端，而且可獲得通過垂直掃描之點影像對角地取代在感測器表面，如顯示於圖9及10。在橫方向之移動係用於大約18圖式元素，當使用顯示於圖8之聚焦系統。該對角移動之結果，該影像係幾乎模糊在該感測器之右及左側。藉由此現象所引起之模糊不均勻性之數量是大於上述焦距移動者。顯示於圖8之先前焦距移動可解決藉由包括與離開基質（物體）1方向成一角度（α )之感測器12 〇根據此方法，然而形成在感測器12之光接受平面上該物體1之影像的形狀扭曲變得較前述案例嚴重，導致模糊不均勻性在感測器12之右及左側較與聚焦系統11平行配置爲嚴重：在 α=15°案例中大約22圖式元素之數量。本發明較佳實施例中，因此該TDI感測器12係被配置以一方向與聚焦系統U平行之方向較平行物體1之角度大，而且一角度被設定爲模糊不均勻性之最小平衡位置，由於兩個上述原理被引起在該感側器12之頂端及底端與右端及左端。更明確地，介於前述CCD行感測器之光接收平面及集中散射光進入光接收平面之聚焦系統之光軸間角度（0S) 係等於，或大於介於光軸及基質間之角度（Θ)，而且大於 90° ，即 90° ><9S 2 。藉由採用上述組態，獲得令人滿意結果係可能的，甚至當使用商業上可獲得透鏡如上描述該聚焦系統Η，沒有 11 (诗先閱讀背面之注意事項再填筠本頁) 訂棒.— ,ϋ 本紙張尺度通/i〗十國國家標準（CNS ) Α4規格（210X297公釐） 444 119 A7 ___ B7 五、發明説明（（D) 藉由複雜的聚焦系統修正在感側器表面兩端之影像移動。實施例2 圖13說明本發明之另一實施例。根據本發明，檢測由曝'光單元所引起之曝光不均勻性當形成抗蝕圖式，而且進 —步精細地觀察該抗蝕圖式之形狀，及圖式上缺陷是可能的α 換言之，當曝光不均勻性觀察要求光源,20對角地發射光線，使用同軸向下照明在抗蝕圖式之形狀缺陷觀察是期待的。根據本實施例，因此如上述案例1參考圖4，如顯示於圖13，光源20充當線性形式日光燈係配置於該基質1 之側邊，而且第一感側器攝影機設備10Α具有聚焦系統 11Α及感測器Ι2Α係配置該另一測上方。該光源20以規劃角度（Θ!)發散光線至基質1之水平平面。該第一感側器攝影機設備10Α具有這類組態，不是直接地従該抗餽圖式之第一部分被反射，但是在邊緣部分被引起之散射光線及以第二角度（02)射入該感測器12被觀察，如案例1所描述。如上描述，第二角度（02)將較佳地係大於第一角度（Θ !)，即 <9 2> Θ i。在此實施例中，再者半透明反射鏡23被配置鄰近光源 20,而且第二感側器攝影機設備10B垂直地被配置在半透明反射鏡23上。該第二感側器攝影機設備10B可與第一感側器攝影機設備10A之相同方式被規劃：該設備包括聚焦系統UB及感測器12B，而且水平地掃描該物體1。遮 _ 12_ 本紙張尺度適中國國家標準（CNS ) A4規格（2I0X297公釐） ---------^裝------ΐτ------像 (請先閱讀背面之注意事項再填艿本頁) 444119 A7 B7 五、發明説明（丨i ) 光板25係配置在適當的位置。實施例3 根據本發明，如實施例1及2所描述，當檢測曝光不均勻性帶有感測器攝影機設備10具有行感測器12譬如 TDI感測器，觀察以第二角度（θθθΟ進入感測器攝影機設備1〇至水平平板之散射光係期望的。在該案例中，必 .須調整至感測器攝影機設備10之入射角θ2,依照物體之過程狀態。在該實施例中，如圖14所顯示，該感測器攝影機設備10被附接至平行運動機構，其運用平行四邊形之四連桿組所形成。更明確地，該平行運動機構具有短連桿L1 及L2與長連桿L3及L4，分別地互相相對。充當該短連桿 L1之固定連桿被固定至基質支撐基座200用於架設觀察之物體，即基質。該長連桿L3及L4之兩端，而且短可移動連桿L2係軸可搖動地附接至該搖動連桿L3及L4之另一端。該感測器攝影機設備10之感測器12係固定於前述可移動連桿L2之規劃位置。感測器12之光接受平板被配置在預定角度至基質支撐基座200之平面。甚至當平行運動機構搖動關於該固定連桿L1之軸向點，因此該可移動連桿 L2總是取代，當與固定連桿L1保持平行。結果，感測器 12之光接受平板取代，當總是維持相對基質支撐基座200 之平面的特定角度。感測器攝影機設備10之聚焦系統11 被附接，譬如至連桿L4。、藉由採用先前規劃，進入該感測器攝影機設備之入射 .13 ---------^ 裝-----------fei (請先閱讀背面之注意事項再填寫本頁) 經济部中央ir.ii-i.JM.T.消合作 u 本紙張尺度適用中國國家標準（CNS ) A4规格（2IOX297公釐）This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 444119 A7 B7 V. Description of the invention (1) When the image of the object i is shot from a diagonal position, the image distortion is generated in the sensor 12. Right and left ends, and point images obtained by vertical scanning can be diagonally replaced on the sensor surface, as shown in Figures 9 and 10. The horizontal movement is used for approximately 18 graphic elements when using the focusing system shown in FIG. As a result of the diagonal movement, the image is almost blurred to the right and left of the sensor. The amount of blur unevenness caused by this phenomenon is larger than the above-mentioned focal length shifter. The previous focal length movement shown in FIG. 8 can be solved by including the sensor 12 at an angle (α) to the direction away from the substrate (object) 1. According to this method, however, the object is formed on the light receiving plane of the sensor 12 The distortion of the shape of the image of 1 becomes more serious than the previous case, causing the blur unevenness to be more severe on the right and left sides of the sensor 12 than in parallel with the focusing system 11: In the case of α = 15 °, about 22 of the pattern elements Quantity. In the preferred embodiment of the present invention, therefore, the TDI sensor 12 is configured such that the direction parallel to the focusing system U is larger than the angle of the parallel object 1 and an angle is set to the minimum equilibrium position of the blur unevenness. Because of the above two principles, the top and bottom ends and the right and left ends of the side sensor 12 are caused. More specifically, the angle between the optical axes (0S) between the light receiving plane of the aforementioned CCD line sensor and the focusing system that concentrates scattered light into the light receiving plane is equal to or greater than the angle between the optical axis and the substrate ( Θ) and greater than 90 °, that is, 90 ° > < 9S 2. By adopting the above configuration, it is possible to obtain satisfactory results, even when using commercially available lenses as described above for the focusing system, no 11 (read the notes on the back of the poem before filling this page). —, Ϋ The standard of this paper is / i〗 Ten National Standards (CNS) A4 specification (210X297 mm) 444 119 A7 ___ B7 V. Description of the invention ((D) Correction of the two surfaces of the sensor by a complex focusing system Embodiment 2 FIG. 13 illustrates another embodiment of the present invention. According to the present invention, the detection of exposure unevenness caused by the exposure unit forms a resist pattern, and further observes in detail The shape of the resist pattern and the defects on the pattern are possible. In other words, when the observation of exposure unevenness requires a light source, which emits light diagonally, using coaxial downward illumination to observe the defects in the shape of the resist pattern is expected. According to this embodiment, as shown in the above case 1 with reference to FIG. 4, as shown in FIG. 13, the light source 20 functions as a linear fluorescent lamp and is disposed on the side of the substrate 1, and the first side sensor camera device 10A has The focusing system 11A and the sensor I2A are arranged above the other measurement. The light source 20 emits light at a planned angle (Θ!) To the horizontal plane of the substrate 1. The first side camera device 10A has such a configuration It is not directly that the first part of the anti-feedback pattern is reflected, but the scattered light caused at the edge part and incident on the sensor 12 at a second angle (02) are observed, as described in case 1. As above It is described that the second angle (02) is preferably larger than the first angle (Θ!), That is, < 9 2 > Θ i. In this embodiment, the translucent mirror 23 is further disposed adjacent to the light source 20, And the second side sensor camera device 10B is arranged vertically on the translucent mirror 23. The second side sensor camera device 10B can be planned in the same manner as the first side sensor camera device 10A: the device includes focusing System UB and sensor 12B, and horizontally scan the object 1. Cover _ 12_ This paper size is in accordance with China National Standard (CNS) A4 specification (2I0X297 mm) --------- ^ install --- --- ΐτ ------ Image (Please read the precautions on the back before filling this page) 4 44119 A7 B7 V. Description of the Invention (丨 i) The light plate 25 is arranged at an appropriate position. Embodiment 3 According to the present invention, as described in Embodiments 1 and 2, when the exposure unevenness is detected, the camera device 10 is equipped with a sensor. It is desirable to have a line sensor 12, such as a TDI sensor, to observe the scattered light entering the sensor camera device 10 to a horizontal flat plate at a second angle (θθθ0). In this case, it must be adjusted to the sensor The incident angle θ2 of the camera device 10 depends on the process state of the object. In this embodiment, as shown in FIG. 14, the sensor camera device 10 is attached to a parallel motion mechanism, which uses a parallelogram four-link set Formed. More specifically, the parallel motion mechanism has short links L1 and L2 and long links L3 and L4, which face each other, respectively. The fixed link serving as the short link L1 is fixed to the substrate supporting base 200 for setting up the observation object, that is, the substrate. Both ends of the long link L3 and L4 and the short movable link L2 are pivotably attached to the other ends of the rocking links L3 and L4. The sensor 12 of the sensor camera device 10 is fixed at the planned position of the aforementioned movable link L2. The light receiving plate of the sensor 12 is arranged at a predetermined angle to the plane of the substrate supporting base 200. Even when the parallel motion mechanism shakes about the axial point of the fixed link L1, the movable link L2 is always replaced when it remains parallel to the fixed link L1. As a result, the light of the sensor 12 is replaced by a flat plate, and a specific angle with respect to the plane of the substrate supporting base 200 is always maintained. The focusing system 11 of the sensor camera device 10 is attached, such as to the link L4. 1. By using the previous plan, enter the sensor camera device. 13 --------- ^ 装 ----------- fei (Please read the precautions on the back first (Fill in this page) Central Ministry of Economic Affairs ir.ii-i.JM.T. Consumer Cooperation u This paper size applies Chinese National Standard (CNS) A4 specification (2IOX297 mm)

鳑來‘部中Α^.^-^,-Μ Τ,消仆合 .PC A7 B7 444119 五、發明説明（/^) 角度（$2)可容易地承變，當維持最佳角度介於觀察物體 (基質）1及導至滿意影像之感測器12間。如另一選擇，基於纏繞中間連桿之平行運動機構如圖 15所顯示也可被運用。更明確地，該可應用組態係以至於滑輪32及33可轉動地被提供在長及細支撐31之兩側：滑輪32之一可轉動地被附接至基質支撐基座200及感測器 12被固定於另一滑輪33，而且兩者滑輪連接至非可延伸皮帶34譬如金屬皮帶。根據實施例，感測器12之光接受平面取代總是維持一定角度相對於基質支撐基座200之平面，甚至當該支撐31 係傾斜一規劃角度相對於該基質支撐基座200。感測器攝影機設備10之聚焦系統11被附接，譬如至長及細支撐Μ 〇也在實施例中，藉由運用先前組態，該入射角度（θ2 )進入感測器攝影機設備可容易地改變，當維持最佳角度介於觀察物體1及導至滿意影像之感測器12間。在上述實施例中，本發明已描述以相關曝光不均勻性之檢測，其由液晶顯示器（液晶TFT基質）製造之曝光單元所引起。本發明係有效地可應用對於檢測圖式不均勻性 ’透過圖式邊緣部分之觀察例如輻射不均与性在雷射退火 ’當多矽TFT基質製造時，即不均勻性被製造在雷射之輻射進入該矽薄膜，而且優點相同於上述者可獲得的。如上所述，本發明表面圖式不均勻性檢測方法及裝置具有一組態，其圖式不均勻性被觀察透過來自圖式邊緣之 ____ 14 ___ 本紙張尺度通用中國國家標準（CNS ) Α4規格（210Χ297公釐） --------V裝-----„-I1Τ------铼 ί (請先閱讀背面之注意事項再雄寫本頁)鳑来 '部中 A ^. ^-^,-Μ Τ, Xiaopuhe. PC A7 B7 444119 V. Description of the invention (/ ^) The angle ($ 2) can be easily changed. When the optimal angle is maintained between observations Object (matrix) 1 and 12 sensors leading to a satisfactory image. As another option, a parallel motion mechanism based on a wound intermediate link may be used as shown in FIG. 15. More specifically, the applicable configuration is such that the pulleys 32 and 33 are rotatably provided on both sides of the long and thin support 31: one of the pulleys 32 is rotatably attached to the substrate support base 200 and sensing The device 12 is fixed to another pulley 33, and both pulleys are connected to a non-extendable belt 34 such as a metal belt. According to the embodiment, the light receiving plane of the sensor 12 always maintains a certain angle relative to the plane of the substrate support base 200, even when the support 31 is tilted at a planned angle relative to the substrate support base 200. The focusing system 11 of the sensor camera device 10 is attached, such as the longest and finest support M0. Also in the embodiment, by using the previous configuration, the incident angle (θ2) can enter the sensor camera device easily. Change when maintaining the optimal angle between the observation object 1 and the sensor 12 leading to a satisfactory image. In the above embodiments, the present invention has been described in terms of detection of related exposure unevenness caused by an exposure unit made of a liquid crystal display (liquid crystal TFT substrate). The present invention is effectively applicable to the detection of pattern inhomogeneities through the observation of the edges of the pattern, such as radiation unevenness and anomalies in laser annealing. When polysilicon TFT substrates are manufactured, the inhomogeneities are manufactured in lasers. The radiation enters the silicon film, and the advantages are the same as those obtained above. As described above, the surface pattern non-uniformity detection method and device of the present invention have a configuration, and the pattern non-uniformity is observed through ____ 14 ___ from the edge of the pattern. This paper standard is generally Chinese National Standard (CNS) Α4. Specifications (210 × 297 mm) -------- V equipment ----- „-I1Τ ------ 铼 ί (Please read the precautions on the back before writing this page)

444119 B7 五 '發明說明（h) 射進入該矽薄膜，而且優點相同於上述者可獲得的-。如上所述，本發明表面圖式不均勻性檢測方法及裝霞具有一組態，其圖式不均勻性被觀察透過來自圖式邊緣之散射光之觀察藉由CCD行感測器具有至少100V/从J/cm2接近該峰値量子效率（7〇〇nm )藉發射光線進入具有形成在表面之圖式的基質。因此有效地檢查物體接受光輻射之表面圖式不均勻性是可能的，較佳地藉使用行感測器攝影機。較佳地，本發明是有效地應用於在液晶顯示器（液晶 TFT基質）製造之抗蝕圖式，允許不僅藉由曝光單元所引起之曝光不均勻性而且抗蝕圖式缺陷。進一步有效地可應用於檢測圖式不均勻性，當多矽TFT基質製造及類似物時〇元件符號 I i I n n n l n n I I I i - I I 〈靖先閱讀背面^注意事項再填寫本頁) 1 基質 10 感測攝影機 10A 第一感測器攝影機設備 10B 第二感測器攝影機設備 Π 聚焦系統 12 感測器 12A 感測器 12B 感測器 20 光源 21 菲涅爾透鏡 22 白分散平板 15 K紙張尺度適用中國國家標準（CNS)A4規格（2〗〇χ297公釐） --線· ig 444 1 19 A7 _；_B7 五、發明說明（ίΦ ) 經濟部智慧財^奇爾11々·^、*· 23 半透明反射鏡 25 遮光板 31 長及細支撐 32,33 滑輪 34 非可延伸皮帶 100 顯示器 200 基質支撐基座 16 (請先閱讀背面之注意事項再填寫本頁) 訂· --線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）444119 B7 V. Description of the invention (h) shot into the silicon film, and the advantages are the same as those obtained by the above-. As described above, the surface pattern non-uniformity detection method and device of the present invention have a configuration in which the pattern non-uniformity is observed through the observation of scattered light from the edge of the pattern. The CCD line sensor has at least 100V. Near the peak from J / cm2, the quantum efficiency (700 nm) enters the substrate with a pattern formed on the surface by emitting light. Therefore, it is possible to effectively check the surface pattern unevenness of the object receiving light radiation, and it is better to use a line sensor camera. Preferably, the present invention is effectively applied to a resist pattern manufactured in a liquid crystal display (liquid crystal TFT substrate), allowing not only exposure unevenness caused by the exposure unit but also resist pattern defects. It can be further effectively used to detect pattern inhomogeneity. When manufacturing polysilicon TFT substrates and the like, the component symbol I i I nnnlnn III i-II 〈Read the back of the document ^ Note before filling in this page) 1 Substrate 10 Sensor Camera 10A First Sensor Camera Device 10B Second Sensor Camera Device Π Focusing System 12 Sensor 12A Sensor 12B Sensor 20 Light Source 21 Fresnel Lens 22 White Dispersion Tablet 15 K Paper Size Applicable China National Standard (CNS) A4 specification (2〗〇297297 mm)-line · ig 444 1 19 A7 _; _B7 V. Description of the invention (ίΦ) Wisdom of the Ministry of Economic Affairs ^ 奇尔 11々 · ^, * · 23 Translucent mirror 25 Shading plate 31 Long and thin support 32, 33 Pulley 34 Non-extendable belt 100 Display 200 Matrix support base 16 (Please read the precautions on the back before filling this page) Standards apply to China National Standard (CNS) A4 (210 X 297 mm)

Claims

444119 AS B8 C8 D8 、申請專利範園 1·—観觀察圖式不均勻性之表面圖式不均句性檢測方法，其步驟包括： (a) 轄射〜光線至具有形成圖式之基質；及 0>)藉由具有至少100V//ajr/cm2的靈敏度的CCD行感測器’觀察來自該圖式之邊緣部分的發散光線，該光線具有該峰値量子效率（ 700nm)，其中介於CCD行感測器之光接收平面及集中散射光進入光接收平面之聚焦系統之光軸間之角度（0S)係等於，或大於介於光軸及基質間之角度（Θ ) ’而且大於90。，即90° >0S g 0。 2 «如申請專利範圍第1項所述之表面圖式不均句檢測方式’其中該CCD行感測器是時域積分（TDI)形式感測器。 3·—種表面圖式不均勻檢測方式包括： Ο) —光源係安裝在基質之側邊上，而且對於該基質水平面以規定第一角度（輻射光線進入該基質；及 (b) 第一感測攝影機設備係放置在基質的另一側，而且由該基質表面之圖式邊緣部分散射後，藉由感測器以第二角度（θ2)進入該基質的水平面的觀察光線以偵測圖式不均勻性，該第一感測攝影機設備具有CCD行感測器，該感測器具有至少100V/以J/cm2接近該峰値量子效率（ 700nm) > 其中介於CCD光接收平面及集中散射光進入光接收平面之聚焦系統之光軸間之角度（0S)係等於，或大於介於光軸及基質間之角度（02) ’該角度係介於該光軸及基質 7¾尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本買) 訂*!---------線. 444119 A8 B8 C8 D8 六如申請專利範圍第3項所述之表面圖式不均勻檢其中該CCD行感測器是時域積分（TDI)形式感如申請專利範圍第5項所述之表面圖式不均勻檢其中該CCD行感測器是時域積分（TDI)形式感申睛專利範圍且小於90。，即90。>esgi92，而且第二角度（& 係大於第一角度（Θ,)，即θ2>θ,=> 測裝4 .如申請專利範圍第3項所述之表面圖式不均勻檢缺ρ*，其中該裝置包栝第二感測器攝影機設備檢查圖式 =在基質表面，其藉由半透明反射鏡被配置鄰近光源所製造。測裝5 ,如申請專利範圍第4項所述之表面圖式不均勻檢具麾，其中該第二感測器攝影機設備具有CCD行感測器二有至} l〇〇v/#J/cm2接近峰値量子效率（7〇〇敏性。心 6 測裝置測器。 7 測裝® P器。 j 8 如申請專利範圍第3項至第7項任一·項所述之表面圖式不均勻檢測裝置，其中該固定連桿被附接至安裝基質之基質支撐基座；當形成支點時，具有搖動連桿的平行運動機構以固定連桿末端加以搖動；而且該第—感測器攝影機設備之感測器係附接至可移動連桿，該連桿係相對於平行運動機構之固定連桿。 9 _如申請專利範圍第3項至第7項任一項所述之表面圖式不均与檢測裝置，其中一長及細支撐之末端可搖動 Γ紙張尺度適用中規；^咖x挪公髮 ,.*·· mlllllf IN ^ * I I I I — I I · I — I t I I ^ -Γ (請先閲請背面之注意事項再填寫本頁)444119 AS B8 C8 D8, patent application Fanyuan 1 · 観 Surface pattern unevenness detection method for observing pattern non-uniformity, the steps include: (a) administering ~ light to a matrix with a pattern; And 0 >) with a CCD line sensor with a sensitivity of at least 100V // ajr / cm2 'observe the divergent light from the edge portion of the pattern, the light has the peak 値 quantum efficiency (700nm), which is between The angle (0S) between the light receiving plane of the CCD line sensor and the optical axis of the focusing system where the scattered light enters the light receiving plane is equal to or greater than the angle (Θ) between the optical axis and the substrate, and greater than 90 . , I.e. 90 ° > 0S g 0. 2 «Surface pattern uneven sentence detection method as described in item 1 of the scope of patent application ', wherein the CCD line sensor is a time-domain integral (TDI) form sensor. 3 · —A surface pattern unevenness detection method includes: 〇) —The light source is installed on the side of the substrate, and at a predetermined first angle to the horizontal plane of the substrate (radiated light enters the substrate; and (b) the first sense The camera equipment is placed on the other side of the substrate, and is scattered by the edge of the pattern on the surface of the substrate. Then, the sensor detects the pattern by observing the light entering the horizontal plane of the substrate at a second angle (θ2) by a sensor. Non-uniformity, the first sensing camera device has a CCD line sensor, the sensor has at least 100V / J / cm2 approaching the peak 値 quantum efficiency (700nm) > which lies between the CCD light receiving plane and the concentration The angle (0S) between the optical axis of the focusing system where the scattered light enters the light receiving plane is equal to or greater than the angle between the optical axis and the substrate (02) 'The angle is between the optical axis and the substrate. National Standard (CNS) A4 Specification (210 X 297 mm) (Please read the notes on the back before filling in this purchase) Order *! --------- line. 444119 A8 B8 C8 D8 Uneven surface pattern described in Scope Item 3 Check that the CCD line sensor is in the form of time domain integration (TDI). The surface pattern is uneven as described in item 5 of the scope of the patent application. Check that the CCD line sensor is in the form of time domain integration (TDI). The patent scope is less than 90 °, ie 90. > esgi92, and the second angle (& is greater than the first angle (Θ,), i.e. θ2 > θ, = > The surface pattern non-uniform inspection ρ * described in the above item, wherein the device includes a second sensor camera equipment inspection pattern = on the surface of the substrate, which is manufactured by using a semi-transparent mirror disposed adjacent to the light source. 5. The surface pattern non-uniformity inspection tool as described in item 4 of the scope of patent application, wherein the second sensor camera device has a CCD line sensor, and there are} l〇〇v / # J / cm2 approaching Peak 値 quantum efficiency (700-sensitivity. Heart 6 measuring device measuring device. 7 measuring device ® P device. J 8 The surface pattern as described in any of the patent application scope item 3 to item 7 is uneven A detection device in which the fixed link is attached to a substrate support base on which a substrate is mounted; when a fulcrum is formed, The parallel motion mechanism with a rocking link is rocked by the end of the fixed link; and the sensor of the first sensor camera device is attached to the movable link, and the link is fixed relative to the parallel motion mechanism 9 _ The surface pattern unevenness and detection device as described in any one of the items 3 to 7 of the scope of patent application, in which a long and thin supporting end can be shaken Γ paper scale is applicable to the standard; ^ coffee x Norwegian public hair, ..... mlllllf IN ^ * IIII — II · I — I t II ^ -Γ (Please read the notes on the back before filling this page)

六、_請專利範圍 (請先閱讀背面之沒意事項再填寫本頁) 地附接至安裝基質之基質支撐基座：滑輪係轉動地附接至在長及細支撐之末端附接至基質支撐基座及另一末端；平行運動機構係藉由以皮帶連接兩個滑輪加以形成；而且該第一感測器攝影機設備之感測器係附接至在平行運動機構之另一末端的滑輪。仁紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Sixth, please patent scope (please read the unintentional matter on the back before filling out this page). Attachment to the substrate support base of the installation substrate: the pulley is attached to the substrate at the end of the long and thin support. The support base and the other end; the parallel movement mechanism is formed by connecting two pulleys with a belt; and the sensor of the first sensor camera device is attached to the pulley at the other end of the parallel movement mechanism . Kernel paper size applies to China National Standard (CNS) A4 (210 X 297 mm)