TW442954B

TW442954B - Layout structure for promoting integration

Info

Publication number: TW442954B
Application number: TW89100922A
Authority: TW
Inventors: Jia-Jang Shiu; Jr-Shr Yang
Original assignee: Prolific Technology Inc
Priority date: 2000-01-20
Filing date: 2000-01-20
Publication date: 2001-06-23

Abstract

This invention is about a kind of layout structure for promoting integration. The layout structure includes an active region, gate pattern, source pattern and drain pattern. The active region includes plural gate regions, plural source regions and plural drain regions. Gate pattern is located on the gate region. Source pattern and drain pattern are located on the source region and the drain region, respectively, both the source pattern and the drain pattern are composed of plural conducting layers, which include the first conducting layer and at least one layer of the second conducting layer. The second conducting layer has a rectangular shape, in which part of its area covers the top of active region.

Description

"v 4429 5 A A7 ____ B7______ 五、發明說明（） 5 -1發明頜域： (請閱讀背面之注意事項再填寫本頁) 本發明與一種佈局結構有關，特別是與一種提昇集積度之佈局結構有關。 5-2發明背景：金氡半場效電晶體（MOSFET)，簡稱為MOS電晶體，其被廣泛應用於積體電路之中，此元件具有一閘極、一源極以及一汲極。當需要大電流時，通常是將數個電晶體並聯，以形成一個如第一围（a)所示的多重指狀（multi· finger) MOS 元件= 在積體電路佈局（layout)的設計規則（design rule) 中，每_金屬層的最大耐流度（可耐受電流的程度）是一項必須考慮的因素，若流經此金屬層的電流密度超過此設計規則所允許的最大耐流度時，此金屬層就可能會被燒斷而使元件因斷路而失效。經濟部智慧財產局貝工消费合作社印製每一金屬層的最大耐流度與金屬廣本身的材質特性有關，且正比於垂直電流方向的寬度，亦即寬度越大’可对受電流的程度就越大。但是為達最小面積之佈局結構’通常金屬層的究度僅設計成設計規則（design rule )所允許的最小線寬。在最小線宽時，若所需的電流密度超過單一金屬層的最大耐流度時，就必須層疊多層的金屬層’並且藉本紙張尺度適用中®國家標旱<CNS)A4规格<210 « 297公釐） A7 442954 B7_ 五、發明說明（）由接觸窗使這些層叠的金屬層形成電性連結（並聯），使其以共同承受流經其上的電流。然而，在習知技術中，層疊多層的金屬層以共同承受流經其上的電流密度時，並無法達到最佳的佈局結構，因為每一層疊之金屬層的形狀均相同且完全重疊，所以其集積度（integration )無法有效提昇，在參閱第一圖（a)-(c) 以及以下之說明之後，將可更進一步了解其原委。第一圖（a)係一多重指狀MOS元件的習知佈局結構，此多重指狀MOS元件係由數個MOS電晶體並聯所形成的，以提供一大電流/，此並聯係指此數個MOS電晶體的源極及汲極皆各自相互連接。如該圖所示，此多重指狀 MOS 元件具有一主動區域5 '數個閘極區域1 0、數個源極區域 2 0以及數個汲極區域3 0，因為此多重指狀Μ 0 S元件係由數個 MOS電晶體並聯所構成的，所以這些源極區域20 必須形成電性連結，例如藉由源極圊案4 0將此數個源極區域2 0形成電性速結；同理，此數個汲極區域3 0亦以汲極連結導線6 0形成電性連結。請參閱第一圖（b)>該圖係說明第一圖（a)中源極圖案40 的佈局結構•此源極圓案40係由兩層金屬層所構成，例如源極圖案之第一層51以及源極圖案之第二層52,構成方式係先形成源極圖案之第一層 5 1，接著再形成源極圖案之第二層52於源極圖案之第一層51上，而且源極圖案本紙張尺度適用中困a家標準（CNS)A4规格（210 * 297公釐） -------—I !^* I I I — I — 訂 ' (請七閱讀"-面之生意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4429 5 4 A7 _B7_ 五、發明說明（） (請先閱讀"-面之注意事項再填寫本頁) 之第一層51與源極圖案之第二層52之間再以接觸窗或是插塞7 0形成電性連結。此源極圖案之第一層5 1與第二層52完全相同且重疊，所以圖中僅顯示源極圖案之第一層 5 1，並以包含括號之圖號 5 2標示源極圖案之第二層 5 2。其中，此源極圖案之第一層5 1為一多重指狀結構，包含複數個指狀部份5 1 a，以及一個用以連結此複數個指狀部份5 1 a的連結部份5 I b ;同樣地，源極圊案之第二層 5 2為亦一多重指狀結構，包含複數個指狀部份5 2 a，以及一個用以連結此複數個指狀部份5 2 a的連結部份5 2 b 請參閱第一圖（c)，用以連結第一圊（a)中數個汲極區域 30的汲極圖案60亦是由兩層金屬層所構成，例如汲極圖案之第一層61以及汲極圊案之第二層62，構成方式亦為先形成汲極圖案之第一層 61，接著再形成汲極圊案之第二層62於此汲極圖案之第一層61上，而且汲極圖案之第二層62與汲極图案之第一層61之間再以接觸窗或是插塞70形成電性連結。此汲極圖案之第一層61以及汲極圖案之第二層62完全相同且重疊。其中，汲極圖案之第一層6 1為一多重指狀結構，其包含複數個指狀部份6 1 a，以及一個用以連結此複數個指狀部份 6 1 a的連結部份經濟部智慧財產局員工消费合作社印製 6 1 b ;同樣地；汲極围案之第二層 62亦為一多重指狀結構，其包含複數個指狀部份6 2 a，以及一個用以連結此複數個指狀部份62a的連結部份62b。請參閱第一圖（a)，上述源極®案40形成於主動區域5 本紙張尺度適用中a國家梂準（CNS)A4蚬格（210 X 297公釐） .4429 5 4 A7 __B7_五、發明說明（）之源極20上：同樣地，汲極圖案60形成於主動區域5 之汲極3 0上，並且閘極1 0係位於相鄰之源極2 0以及汲極3 0之間，以搆成一具有源極2 0、汲極3 0以及閘極1 0 元件。接下來，將說明習知技術所需的佈局面積，請參閱第一圖（a)，若已知源極圖案之第一層以及汲極圖案之第一層的最大耐流度均為 A(mA/ ym)，且源極圖案之第二層以及没極園案之第二層的最大耐流度均為B(mA/ #m)，則源極圖案40或是汲極®案60的最小線寬妒可依下列（1)或（2) 式計算：" v 4429 5 A A7 ____ B7______ 5. Description of the invention () 5 -1 Inventive jaw area: (Please read the notes on the back and fill out this page) The present invention is related to a layout structure, especially to improve the integration degree The layout structure is related. 5-2 Background of the Invention: Gold halves half field effect transistors (MOSFETs), referred to as MOS transistors, are widely used in integrated circuits. This element has a gate, a source, and a drain. When a large current is required, usually several transistors are connected in parallel to form a multi-finger MOS device as shown in the first circle (a) = design rules for the layout of the integrated circuit (Design rule), the maximum current resistance of each metal layer (the degree of current resistance) is a factor that must be considered, if the current density flowing through this metal layer exceeds the maximum current resistance allowed by this design rule When this temperature is exceeded, the metal layer may be burned and the component may fail due to an open circuit. The maximum current resistance of each metal layer printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is related to the material characteristics of the metal, and is proportional to the width in the vertical current direction, that is, the greater the width, the degree of current can be received. The bigger. However, in order to achieve a layout structure with a minimum area, the investigation of the metal layer is usually designed only to the minimum line width allowed by the design rule. At the minimum line width, if the required current density exceeds the maximum current resistance of a single metal layer, multiple metal layers must be laminated 'and this paper is applicable in the national standard Drought < CNS) A4 Specification < 210 «297 mm) A7 442954 B7_ 5. Description of the invention () The laminated metal layers are electrically connected (parallel) by a contact window, so that they can jointly withstand the current flowing through them. However, in the conventional technology, when a plurality of metal layers are stacked to bear the current density flowing therethrough, the optimal layout structure cannot be achieved, because the shape of each stacked metal layer is the same and completely overlaps, so Its integration cannot be effectively improved. After referring to the first diagrams (a)-(c) and the following descriptions, you will learn more about its origin. The first figure (a) is a conventional layout structure of a multi-finger MOS device. The multi-finger MOS device is formed by connecting a plurality of MOS transistors in parallel to provide a large current /. The source and drain of several MOS transistors are connected to each other. As shown in the figure, the multi-finger MOS device has an active region 5 ′, several gate regions 10, several source regions 20, and several drain regions 30, because the multi-finger MOS 0S The device is composed of several MOS transistors connected in parallel, so these source regions 20 must be electrically connected. For example, the source region 20 is used to form an electrical quick junction by the source scheme 40; the same In principle, the plurality of drain regions 30 are also electrically connected by drain connection wires 60. Please refer to the first figure (b) > This figure illustrates the layout structure of the source pattern 40 in the first figure (a). The source circle 40 is composed of two metal layers, such as the first of the source pattern. The first layer 51 and the second layer 52 of the source pattern are formed by first forming the first layer 51 of the source pattern, and then forming the second layer 52 of the source pattern on the first layer 51 of the source pattern. And the source pattern of this paper is applicable to a standard (CNS) A4 specification (210 * 297 mm) --------- I! ^ * III — I — Order '(please read seven "- Please fill in this page for the business matters above) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4429 5 4 A7 _B7_ V. Description of the invention () (Please read " -Notes above before filling in this page) Level 1 An electrical connection is formed between 51 and the second layer 52 of the source pattern by a contact window or a plug 70. The first layer 51 and the second layer 52 of the source pattern are completely identical and overlap, so only the first layer 51 of the source pattern is shown in the figure, and the number 5 2 of the source pattern is indicated by the bracket number 5 2 Second floor 5 2. Wherein, the first layer 51 of the source pattern is a multi-finger structure, including a plurality of finger portions 5 1 a, and a connecting portion for connecting the plurality of finger portions 5 1 a. 5 I b; Similarly, the second layer 5 2 of the source case is also a multi-finger structure, including a plurality of finger parts 5 2 a, and a finger part 5 for connecting the plurality of finger parts 5 The connection part of 2 a 5 2 b Please refer to the first figure (c). The drain pattern 60 used to connect several drain regions 30 in the first 圊 (a) is also composed of two metal layers, for example The first layer 61 of the drain pattern and the second layer 62 of the drain pattern are also formed by first forming the first layer 61 of the drain pattern, and then forming the second layer 62 of the drain pattern. The first layer 61 of the pattern is electrically connected between the second layer 62 of the drain pattern and the first layer 61 of the drain pattern by a contact window or a plug 70. The first layer 61 of the drain pattern and the second layer 62 of the drain pattern are identical and overlap. The first layer 6 1 of the drain electrode pattern is a multi-finger structure, which includes a plurality of finger portions 6 1 a, and a connecting portion for connecting the plurality of finger portions 6 1 a. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 1 b; Similarly, the second layer 62 of the Djiji case is also a multi-finger structure, which includes a plurality of finger portions 6 2 a, and one A connecting portion 62b connecting the plurality of finger portions 62a is provided. Please refer to the first picture (a). The above-mentioned Source® Case 40 is formed in the active area. 5 This paper size is applicable to the National Standard (CNS) A4 grid (210 X 297 mm). 4429 5 4 A7 __B7_F 2. The source electrode 20 of the invention description: Similarly, the drain pattern 60 is formed on the drain electrode 30 of the active region 5, and the gate electrode 10 is located on the adjacent source electrode 20 and the drain electrode 30. In order to form a device with a source 20, a drain 30 and a gate 10. Next, the layout area required by the conventional technology will be described. Please refer to the first figure (a). If the first layer of the source pattern and the first layer of the drain pattern are known, the maximum current resistance is A ( mA / ym), and the maximum current resistance of the second layer of the source pattern and the second layer of the electrode pattern is B (mA / # m), then the source pattern 40 or the drain® case 60 The minimum line width jealousy can be calculated according to the following formula (1) or (2):

(A + B)F (1) --------------)裝--- <請it;閱讀#.面之注意事項再填寫本頁) W = I I (A + B) (2) 另外，若已知此多重指狀MOS元件之主動區域5的寬度為Γ，且長度為i，則根據（2)式，可求得此多重指狀 MOS元件的最小佈局面積（d)如下列（3)式：(A + B) F (1) --------------) Install --- < Please it; read the note on #. And then fill out this page) W = II (A + B) (2) In addition, if the width of the active region 5 of the multi-finger MOS device is Γ and the length is i, the minimum layout of the multi-finger MOS device can be obtained according to formula (2). The area (d) is as follows (3):

A = {2W+T) L (3) 訂---------線，經濟部智慧財產局員Η消費合作社印製亦即A = {2W + T) L (3) Order --------- line, printed by a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by a consumer cooperative, that is,

+ T+ T

L (4) 本紙張尺度適用中a國家標準（CNS)A4规格（210x297公« ) Η' 4 429 5 4 Α7 __ S7__ 五、發明說明（）由（4)式可知，上述的佈局面積d主要是由主動區域5 的面積、源極圖案40的面積以及汲極圖案60的面積所構成的，其中源極圖案40以及汲極圖案60會佔用很多的佈局面積，而使集積度無法有效提昇。在不更動元件特性的情況下，欲提昇集積度並無法以縮小主動區域5的方法來減少此佈局面積，因為此多重指狀Μ Ο S元件的特性是由主動區域5的寬度Γ以及長度乙所決定；另外，在不改變製程條件的情形下，此時可改變的便是減少源極圖案 4 0 的面積以及汲極圖案60的面積。 5-3發明目的及概述：鑒於上述的發明背景申，習知技術在層疊多層的金屬層，並將其並聯以共同承受流經其上的電流密度時，金屬層會佔用很多的佈局面積，連帶地，將使集積度無法有效提昇《因此，本發明在此提出一種佈局結構，可以以較小的佈局面積承受相同的最大電流；或是說，在相同的元件面積下，可以承受更大的電流（電流密度）。如此，採用本發明之佈局結搆的積體電路，其集積度將可以顯著地提昇。本發明之概述如下：一種提昇集積度之佈局結構|包含主動區域、閘極圖案、源極圖案以及汲極圖案》該主動區域包含複數個閘極區域、複數個源極區域以及複數個汲本紙張尺度適用中國國家標準<CNS)A4規格（210*297公釐> ---------------. (請知閱讀f.面之ii意事項再填寫本頁) 訂---------線' 經濟部智慧財產局員工消費合作杜印製 ^ A7 _B7_ 五、發明說明（）極區域。其中，閘極圖案，位於該閘極區域上。源極圊案是由複數層的導電層所搆成，包含一源極圖案之第一層以及至少一層源極圖案之第一層。其中源極圖案之第一層係位於此數導電層的最底層，並且為一多重指狀結構，此多重指狀結構包含指狀部份以及連結部份，此指狀部份形成於源極區域上。此外，值得注意的是，源極圖案之第二層 (形成於源極圖案之第一層上以及再更上層之導電層 (形成於源極圖案之第二層上）並非多重指狀結構，而是為一矩形，此矩形有部份面積係覆蓋於主動區域之上。同樣地，汲極圖案亦是由複數層的導電層所構成，包含一汲極圖案之第一層以及至少一層汲極圖案之第一層。其中，汲極圖案之第一層係位於此數導電層的最底層’並且為一多重指狀結構，此多重指狀結構包含指狀部份以及連結部份，此指狀部份形成於汲極區域上。此外，值得注意的是，汲極圖案之第二層（形成於汲極圖案之第一層上），以及再更上層之導電層（形成於汲極圖案之第二層上）並非多重指狀結構，而是為一矩形，此矩形有部份面積係覆蓋於主動區域之上。 S-4圖式簡單說明：本發明的較佳實施例將於往後之說明文字中辅以下列圖形做更詳細的闡述：本紙張疋度適用中國國家標準（CNS)A4規格（210 X 297公；g ) ---------丨丨丨)裝· (請先閱讀—面之注意事項再填寫本頁) 訂--------線· 經濟部智慧財產局員工消費合作社印製L (4) This paper size is applicable to a national standard (CNS) A4 specification (210x297 male «) Η '4 429 5 4 Α7 __ S7__ V. Description of the invention () According to formula (4), the above-mentioned layout area d is mainly It is composed of the area of the active region 5, the area of the source pattern 40, and the area of the drain pattern 60. The source pattern 40 and the drain pattern 60 occupy a lot of layout area, so that the degree of integration cannot be effectively improved. Without changing the characteristics of the element, it is not possible to reduce the layout area by reducing the active area 5 in order to improve the accumulation degree, because the characteristics of the multi-finger MEMS device are the width Γ and the length B of the active area 5. In addition, without changing the process conditions, what can be changed at this time is to reduce the area of the source pattern 40 and the area of the drain pattern 60. 5-3 Purpose and Summary of the Invention: In view of the above background of the invention, when the conventional technology stacks multiple metal layers and connects them in parallel to bear the current density flowing through them, the metal layers occupy a lot of layout area. Together, it will make it impossible to effectively improve the degree of integration. Therefore, the present invention proposes a layout structure that can withstand the same maximum current with a smaller layout area; or, under the same component area, it can withstand larger Current (current density). In this way, the integration degree of the integrated circuit using the layout structure of the present invention can be significantly improved. The outline of the present invention is as follows: a layout structure for improving the accumulation degree | including an active region, a gate pattern, a source pattern, and a drain pattern '' The active region includes a plurality of gate regions, a plurality of source regions, and a plurality of drain books The paper size applies the Chinese national standard < CNS) A4 specification (210 * 297 mm >). (Page) Order --------- line 'Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ A7 _B7_ V. Description of the invention () Gate area, where the gate pattern is located on the gate area. The source pattern is composed of a plurality of conductive layers, including a first layer of a source pattern and at least one first layer of the source pattern. The first layer of the source pattern is located on the conductive layers. The bottom layer is a multi-finger structure. The multi-finger structure includes a finger part and a connection part, and the finger part is formed on the source region. In addition, it is worth noting that the source pattern The second layer (formed on the first layer of the source pattern and further above the conductive layer (formed on On the second layer of the source pattern) is not a multi-finger structure, but a rectangle, and part of the rectangle covers the active area. Similarly, the drain pattern is also composed of a plurality of conductive layers. The structure includes a first layer of a drain pattern and at least one first layer of a drain pattern. The first layer of the drain pattern is located at the bottom of the conductive layers and has a multi-finger structure. The multiple finger structure includes a finger portion and a connecting portion, and the finger portion is formed on the drain region. In addition, it is worth noting that the second layer of the drain pattern (formed on the first layer of the drain pattern) Layer), and the upper conductive layer (formed on the second layer of the drain pattern) is not a multi-finger structure, but a rectangle, and part of this rectangle covers the active area. S -4 Schematic illustration: The preferred embodiment of the present invention will be described in more detail in the following explanatory texts with the following figures: This paper is suitable for the Chinese National Standard (CNS) A4 specification (210 X 297 mm) G) --------- 丨丨丨) installed · (Please read—Notes above before filling out this page) Order -------- Line Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明（）第一圖（a)係一多重指狀 MOS元件的習知佈局結構此多重指狀Μ 0 S元件係由數個Μ O S電晶體並聯而成》第一圖（b)係第一圖（a)之習知佈局結構的源極圖案，此源極圊案係由數層的完全相同的導電圖案所層疊而成的。第一囷（c)係第一圖（a)之習知佈局結構的没極圖案，此汲極圊案係由數層的完全相同的導電圖案所層疊而成的。第二圖（a)係本發明之實施例中的主動區域，該主動區域上具有數個閘極。第二® (b)係本發明之源極圖案之第一層，係為一多重指狀結構。第二圖（c)係汲極圈案之第一層形成於主動區域上之佈局結構。第二圖（d)係本發明之汲極圖案之第一層，係為一多重指狀結搆。請先」閲讀背. 面之意事項再填本頁訂線經濟部智慧3¾產局員工消費合作社印製第二圖（e)係汲極圇案之第一層以及汲極圊案之第層形成於主動區域上之佈局結構》第三圖（a)係汲極圖案之第二層以及汲極圖案之'第二本紙張尺度適用中國國家標準（CNS>A4现格（210 * 297公釐） ,4A29 5 4 a7 B7五、發明説明（）層的佈局結構。第三圖（b)係本發明之佈局結構。第四圈（a)係本發明之第二實施例中源極圖案之第一層與源極圖案之第一層的圈案，其具有一鋸齒邊。第四圈（b)係本發明之第二實施例的佈局結構。圈號對照說明： (請先閱讀背面之注意事項再填寫本頁) U. 經濟部智惡財產局員工消費合作社印製 5主動區域 20源極區域 3 0汲極區域 50主動區域 70第二接觸窗 2 00源極區域 3 00汲極區域 510源極圖案之第一層 5 1 0 b源極連結部份 6 0 0汲極圖案 610a汲極指狀部份 620汲極圖案之第二層 720源極圖案之第二層 1 0閘極區域 25第一接觸窗 40源極圖案 60汲極圖案 1 0 0閘極區域 250第一接觸窗 500源極圊案 5 1 0a源極指狀部份 5 20源極圖案之第二層 610汲極圖案之第一層 6 1 0 b汲極連結部份 700第二接觸窗 820汲極圖案之第二層訂本纸張尺度逍用中國國家揉率（CNS ) A4规格（2丨0X297公釐） 4429 5 4 A7 B7 經濟部智慧財產局員工消費合作社印製五、發明説明（） 5-5發明詳細說明：在本發明的佈局結構中，源極圖案以及汲極圊案是由複數層的導電層所構成，由主動區域往上數依序為第一導電層、第二導電層…，其中第二導電層以及其以上之導電層有部份面積係重疊於主動區域之上（習知技術並無如此的設計），因此在相同的電流下，面積可以較習知技術大幅地縮小；或者是說，在相同的元件面積下，耐受電流的程度可以較習知技術大幅地增加。至於更詳細的實施例則說明如下。第一實方包例本發明之佈局結構的第一實施例以第二圖（e)所示的多重指狀（multi-finger) MOS元件說明之。如圖所示，此多重指狀MOS元件具有一主動區域50、數個閘極區域 100、數個源極區域200以及數個汲極區域300，其中每一個閘極區域100均位於一源_極區域200與一；及極區域 300之間。因為此多重指狀MOS元件在電路結構上係由複數個MOS電晶體所並聯而成的，所以此複數個源極區域2 00必須藉由導線將其連結，例如可藉由源極連結導線 510將其相互連結以形成一源極圈案500，並且此源極圖案500是由複數層導電層所層疊而成，例如是由兩層導電層所層4而成。 (請先_閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家榡率（CNS > A4规格（210X297公羹） A7 B7 五、發明説明（）同樣地，此複數個汲極區域3 〇〇也須藉由及極連結導線6 1 0將其相互連結以形成—汲極圖案6〇0，並且此沒極圖案600係由複數層導電層所層疊而成，例如是由兩層導電層所層疊而成。仍請參閱第二圓（e)，此源極圖案500係由複數層導電層所層疊而成的，例如”源極圊案之第一層”5丨〇、”源極圖案之第二層’’5 2 0…源極圖案之第0層”等等，依此類推。同樣地，此汲極圈案600亦是由複數層導電層所層疊而成的，例如”汲極圖案之第一層”6丨〇、”汲極阈案之第二層”620 ··.’’?及極圖案之第]1層’’等等，依此類推。請參閱第二圓（a) ’ 一主動區域50，其長度及寬度分別約為i與Γ’並且此主動區域5〇具有一第一長緣5〇a以及一第二長緣50b。數個作為閘極電極的閘極導電圖案丨⑽，橫跨於此主動區域50之上* 經濟部智楚財產局負工消貧合作社印製請參閱第二圓（b)，一源極圖案之第一層51〇,為一多重指狀结構’其包含複數個源極指狀部份5丨〇a以及—個源極連結部份5 1 Ob。其中·每一個源極指狀部份5 1 〇a的外觀均成長條狀，由於此源極指狀部份510a在佈局結搆上係橫跨於主動區域〈未顯示〉之上以作為源極電極，所以其縱向長度至少大於主動區域的寬度Γ。此外，每個源極指狀部份5 1 0a的一端均藉由源極連結部份5〖Ob的連结而形成一整肢圖案°此源極速結部份5 1 0 b的外觀亦成一長條狀- 本紙張尺度逋用中國國家梯摩· < CNS } A4洗格（210X 297公釐} 442954 A7 B7 經濟部智慧財產局員工消费合作社印製五、發明説明（）其長度、寬度分別約為I與妒，並且此源極連結部份5 1 〇 b 具有一 ’’最長外緣”，該最長外緣係指其未與源極指狀部份 5 I 0 a連結之較長外緣。請參閱第二圖（c)，此源接圖案之第一層51〇形成於上述主動區域50之上，其中’源極指狀部份5i〇a形成於主動區域50之源極區域200上，並藉由至少一個第一接觸窗 250與源極區域200形成電性連結以作為源極電極。請參閱第二圖（d)，一汲極圖案之第一層61〇，為一多重指狀結構，其包含複數個汲極指狀部份6丨〇a以及一個汲極連結部份610b»其中，每一個汲極指狀部份61〇a的外觀均成長條狀’由於此沒極指狀部份6l〇a在佈局結構上係橫跨於主動區域（未顯示〉之上以作為及極電極，所以其縱向長度至少大於主動區域的寬度Γ (如第二圖（a)所示）。此外，每個汲極指狀部份6丨0a的一端均藉由汲極連結部份 610b的連結而形成一整體圖案β此汲極連結部份6i〇b的外觀亦成一長條狀，其長度、宽度分別約為與並且，此汲極連結部份6 1 Ob具有一 ”最長外緣，，，該最長外緣係指其未與汲極指狀部份610a連結的較長外緣。請參閱第二ffl(e)，此汲極圖案之第一層610形成於上述主動區域50之上，其中，汲極指狀部份6丨0a形成於主動區域50之汲極區域300上，並藉由至少一個第一接觸窗 250與汲極區域300形成電性連結以作為汲極電極。並且冬紙張尺度遑用肀繭國家檫準（CNS ) A4规樁（210X2.97公羡） {請先W讀背面之注意事項再填寫本頁) .訂 YY· * I I ff 4429 5 4 經濟部智慧財產局員工消費合作社印製 A7 B7__ --------*五、發明説明（）閘極導電圖案1 〇〇係位於相鄰的源極指狀部份5 10a與及極指狀部份6 1 0 a之間，以構成一具有源極、閘極以及汲極之 MOS元件<*此外，該汲極指狀部份6 1 〇a以至少一個第一接觸窗2 5 0與主動區域形成電性連結。並立，源極指狀部份 5 1 0a的末端與汲極連結部份6 1 0b保持一間距S而未接觸’ 此間距S係等於或大於設計規則中，同一平面中〈由同一道光罩所形成之〉兩相鄰導電層間的最小距離。同樣地：汲極指狀部份6 1 0a的末端亦與源極連結部份5 1 0b保持同樣的間距S而未接觸》請參閱第三圖（a)，該圖係同時顯示源極圖案之第二層 520以及汲極圖案之第二層620 ·其_值得注意的是，源極圖案之第二層520並非如習知技術般為多重指狀，而是為 —矩形，並且具有第一長緣520a以及第二長緣520b >兩者係位於矩形之相反兩側；同樣地，汲極圖案之第二層620, 亦為一矩形，並且具有第一長緣620a以及第二長緣620b，兩者係位於矩形之相反兩侧，並且苐二長緣6 20b相鄰於第二長緣520b。此源極囫案之第二層520的第二長緣520b 以及汲極圖案之第二層620的第二長緣620b係保持一間距 S而未接觸，此間距S係等於或大於設計規則中，同一平面中〈由同一道光箪所形成之〉兩相鄰導電層間的最小距離，請參閲第三圈（b)，至少一層的源極圖案之第二層 5 20，形成於如第二圈（e)所示的主動區域50以及源極圖本纸»尺度遑用中_麵家榇準（CNS ) ΜΛΙ格（HOX297公釐） (請先閱讀背面之注意事項再填寫本頁) .-4 訂嗖y·V. Description of the invention () The first picture (a) is a conventional layout structure of a multi-finger MOS device. This multi-finger M 0 S device is formed by connecting a plurality of M OS transistors in parallel. ) Is the source pattern of the conventional layout structure of the first figure (a), and the source pattern is formed by stacking several layers of identical conductive patterns. The first frame (c) is a non-polar pattern of the conventional layout structure of the first frame (a), and the drain frame is formed by stacking several layers of identical conductive patterns. The second figure (a) is an active area in the embodiment of the present invention, and the active area has a plurality of gates. The second (b) is the first layer of the source pattern of the present invention, which is a multi-finger structure. The second figure (c) is the layout structure where the first layer of the drain circle is formed on the active area. The second figure (d) is the first layer of the drain pattern of the present invention, which is a multi-finger structure. Please read the back first. Fill in the above meanings and then fill out this page. The Ministry of Economic Affairs, the Ministry of Wisdom 3¾ Printed by the Consumer Cooperative of the Production Bureau. The second picture (e) is the first layer of the drain case and the second layer of the drain case. The layout structure formed on the active area "The third figure (a) is the second layer of the drain pattern and the second paper size of the drain pattern is applicable to the Chinese national standard (CNS > A4 now standard (210 * 297 mm) ), 4A29 5 4 a7 B7 V. Description of the layout structure of the () layer. The third figure (b) is the layout structure of the present invention. The fourth circle (a) is the source pattern in the second embodiment of the present invention. The circle of the first layer and the first layer of the source pattern has a sawtooth edge. The fourth circle (b) is the layout structure of the second embodiment of the present invention. Comparison of circle numbers: (Please read the Note: Please fill in this page again.) U. Printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs 5 Active area 20 Source area 3 0 Drain area 50 Active area 70 Second contact window 2 00 Source area 3 00 Drain area First layer of 510 source pattern 5 1 0 b Source connection part 6 0 0 Drain pattern 6 10a Drain finger part 620 Drain pattern second layer 720 Source pattern second layer 1 0 Gate region 25 First contact window 40 Source pattern 60 Drain pattern 1 0 0 Gate region 250 First Contact window 500 source case 5 1 0a source finger portion 5 20 second layer of source pattern 610 first layer of drain pattern 6 1 0 b drain connection portion 700 second contact window 820 drain The second layer of the design of the paper is used in the paper size of the Chinese National Standard (CNS) A4 (2 丨 0297mm) 4429 5 4 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -5 Detailed description of the invention: In the layout structure of the present invention, the source pattern and the drain pattern are composed of a plurality of conductive layers, and the first conductive layer and the second conductive layer are sequentially numbered upward from the active area. …, Part of the area of the second conductive layer and above is overlapped on the active area (the conventional technology does not have such a design), so the area can be much larger than the conventional technology under the same current Reduction; or, in the same component area, The degree can be greatly increased compared with the conventional technology. As for the more detailed embodiment, it is explained as follows. First practical package example The first embodiment of the layout structure of the present invention is shown in the second figure (e) with multiple fingers ( Multi-finger) MOS device is illustrated. As shown in the figure, the multi-finger MOS device has an active region 50, a plurality of gate regions 100, a plurality of source regions 200, and a plurality of drain regions 300, each of which The gate regions 100 are all located between a source-pole region 200 and one; and a pole region 300. Because the multi-finger MOS device is formed by connecting a plurality of MOS transistors in parallel in the circuit structure, the plurality of source regions 2000 must be connected by wires, for example, the source can be connected to the wire 510. They are connected to each other to form a source pattern 500, and the source pattern 500 is formed by stacking a plurality of conductive layers, such as layer 4 formed by two conductive layers. (Please read the notes on the back before filling this page) This paper size is applicable to China's national standard (CNS > A4 size (210X297 cm) A7 B7 V. Description of the invention () Similarly, this plurality of drain regions 3 00 must also be connected to each other by the pole connecting wire 6 1 0 to form a drain pattern 600, and the electrode pattern 600 is formed by stacking a plurality of conductive layers, for example, two layers The conductive layer is stacked. Still referring to the second circle (e), the source pattern 500 is formed by stacking a plurality of conductive layers, for example, "the first layer of the source case" 5 丨〇, " The second layer of the source pattern "5 2 0 ... the 0th layer of the source pattern" and so on. Similarly, the drain circle 600 is also formed by stacking a plurality of conductive layers. For example, "the first layer of the drain pattern" 6 丨〇, "the second layer of the drain threshold" 620 · · "? And the first layer of the drain pattern", and so on. See also The second circle (a) 'is an active area 50 having a length and a width of approximately i and Γ', respectively, and the active area 50 has a first long edge 5 a and a second long edge 50b. Several gate conductive patterns serving as gate electrodes span across the active area 50. * Printed by the Ministry of Economic Affairs, the Intellectual Property Bureau of Chu Chu, see the second work Circle (b), the first layer 51 of a source pattern is a multi-finger structure, which includes a plurality of source finger portions 5a and a source connection portion 5 1 Ob. Among them, the appearance of each of the source finger portions 5 1 〇a has a long stripe shape, because the source finger portions 510a span the active area (not shown) as the source electrode in the layout structure. Electrode, so its longitudinal length is at least greater than the width Γ of the active region. In addition, one end of each source finger portion 5 1 0a forms a whole limb pattern by the connection of the source connection portion 5 [Ob] ° The appearance of this source extremely fast knot part 5 1 0 b is also a long strip-this paper size uses China National Timo < CNS} A4 wash grid (210X 297 mm) 442954 A7 B7 employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative V. Description of the invention () Its length and width are about I and jealousy respectively, and this source is connected The portion 5 1 〇b has a "longest outer edge", which refers to the longer outer edge which is not connected to the source finger portion 5 I 0 a. Please refer to the second figure (c). A first layer 51 of the source connection pattern is formed on the active region 50, and a 'source finger portion 5ioa is formed on the source region 200 of the active region 50, and at least one first contact window is formed. 250 is electrically connected to the source region 200 as a source electrode. Please refer to the second figure (d). The first layer 61 of a drain pattern is a multi-finger structure including a plurality of drain electrodes. The finger part 6 丨〇a and a drain connection part 610b »Among them, the appearance of each drain finger part 61〇a has a long stripe shape. The structure spans the active area (not shown) as the anode electrode, so its longitudinal length is at least greater than the width Γ of the active area (as shown in the second figure (a)). In addition, one end of each of the drain finger portions 6 丨 0a forms an overall pattern by the connection of the drain connection portion 610b. The appearance of this drain connection portion 6i0b also has a long shape. The length and the width are respectively about and. The drain connection portion 6 1 Ob has a “longest outer edge”, and the longest outer edge refers to a longer outer edge that is not connected to the drain finger portion 610a. Please refer to the second ffl (e). The first layer 610 of the drain pattern is formed on the active region 50. The drain finger portion 6 丨 0a is formed on the drain region 300 of the active region 50. The at least one first contact window 250 is used to form an electrical connection with the drain region 300 to serve as a drain electrode. And the winter paper scale uses the National Cocoon Standard (CNS) A4 gauge (210X2.97 public envy) { Please read the precautions on the back before filling out this page). Order YY · * II ff 4429 5 4 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7__ -------- * V. Description of Invention () The gate conductive pattern 100 is located between the adjacent source finger portion 5 10a and the pole finger portion 6 1 0 a to constitute MOS device with source, gate, and drain < * In addition, the finger portion 6 1 0a is electrically connected to the active region with at least one first contact window 2 50. Parallel, source The end of the finger part 5 1 0a and the drain connection part 6 1 0b maintain a distance S without contacting it. This distance S is equal to or greater than the design rule, "formed by the same mask" in the same plane. The minimum distance between adjacent conductive layers. Similarly: the end of the drain finger portion 6 1 0a also maintains the same distance S without contact with the source connection portion 5 1 0b. Please refer to the third figure (a), The figure shows the second layer 520 of the source pattern and the second layer 620 of the drain pattern at the same time. It is worth noting that the second layer 520 of the source pattern is not multi-finger like conventional techniques, and Is-rectangular, and has a first long edge 520a and a second long edge 520b > both are on opposite sides of the rectangle; similarly, the second layer 620 of the drain pattern is also a rectangle and has a first A long edge 620a and a second long edge 620b, both of which are located on opposite sides of the rectangle, and The two long edges 6 20b are adjacent to the second long edge 520b. The second long edge 520b of the second layer 520 of the source case and the second long edge 620b of the second layer 620 of the drain pattern maintain a distance S Without contact, the distance S is equal to or greater than the minimum distance between two adjacent conductive layers in the same plane (formed by the same light beam) in the design rule. Please refer to the third circle (b), the source of at least one layer The second layer 5 20 of the polar pattern is formed in the active area 50 as shown in the second circle (e) and the source map paper. The scale is in use_ 面家榇准 (CNS) ΜΛΙ 格 (HOX297 mm) (Please read the notes on the back before filling out this page) .-4 Order y ·

^ In —II 經濟部智蒽財產局員工消費合作社印製 ,4 2 9 5 4 A? __ B7_五、發明説明（) 案之第一層510上。其中，該源極圖案之第二層520的第一長緣5 2 0 a與上述源極連結導線5丨0 b的”最長外緣”切齊’該最長外緣係指源極連結導線 5丨0 b未與指狀部份 510a相連的較長外緣，並且該源極圖案之第二層520的第二長緣520b約位於該主動區域50之一半寬度處（如圖中所示之T/2處）。換句話說，此主動區域50約有一半的面積（上半部）係被源極圖案之第二層520所覆蓋，並且此面積約為1772。仍請參閱第三圖（1>)，同樣地，該；及極圖案之第二層 620的第一長緣620a與上述汲極圖案之第二層610的，’最長外緣’’切齊，並且該汲極圖案之第二層620的第二長緣 620b約位於該主動區域50之一半寬度處（如圖中所示之 T/2處）。換句話說’此主動區域50約有一半的面積（下半部）係被汲極圖案之第二層620所覆蓋，並且此面積約為 Z772。仍請參閱第三® (b)，值得注意的是，該源極圖案之第二層520的第二長緣520b與汲極圖案之第二層620的第二長緣620b保持一距離而未接觸*此間距S係等於或大於設計規則中，同一平面中〈由同一道光罩所形成之〉兩相鄰導電層的間的最小距離。在此實施例當中，主動區域5 0的寬度Γ約為8 0 a m，而最小金屬間距約為〇. 8 # m，約為100 比1，所以此最小金眉間距相較於主動區域5 0的寬度Γ而言甚小’可以忽略不計。此外，藉由至少一個第二接觸窗 {請先閱讀背面之注意事項再填寫本頁) 本紙張尺度遑用中國礪家樣率（CNS >从规格（2丨OX297公漦） 4429 5 4 A7 B7 五、發明说明（） 700，源極圊案之第二層520與源極圖案之第一層5丨〇可形成電性連结11同樣地，藉由至少一個第二接觸窗7〇〇，j及極圖案之第一層620與没極圖案之第一層61〇可形成電性連結。以下說明將說明藉由本發明之佈局結構所能節省之佈局面積，仍請參閱第三（b)圖，並以源極圖案為例若已知源極圖案之第一層510以及源極圖案之第二層52〇的最大耐流度分別為A(mA/ym)以及B(mA/ym)，源極圖案之第二層520的宽度約為i (妒+ 7V2 )，並且由第二（b)圖可知源極圖案之第一層510的寬度約為£妒。當有一大電流I 流經其上，則诛極圊案500的最小線寬酽’可依下列（5)、（6) 式計算： I = AW+B(fT,+ r/2) (5) !: ^ 丨 i (請先聞讀背&·之注意事項再填寫本頁) -訂 W'^ In —II Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 4 2 9 5 4 A? __ B7_ V. Description of Invention () on the first layer 510 of the case. Wherein, the first long edge 5 2 0 a of the second layer 520 of the source pattern is aligned with the “longest outer edge” of the source connecting wire 5 丨 0 b. The longest outer edge refers to the source connecting wire 5丨 0 b is the longer outer edge that is not connected to the finger portion 510a, and the second long edge 520b of the second layer 520 of the source pattern is located at about one and a half width of the active area 50 (as shown in the figure) T / 2). In other words, about half of the area (top half) of the active area 50 is covered by the second layer 520 of the source pattern, and this area is about 1772. Still referring to the third figure (1>), similarly, the first long edge 620a of the second layer 620 of the pole pattern is aligned with the 'longest outer edge' of the second layer 610 of the drain pattern described above. And, the second long edge 620b of the second layer 620 of the drain pattern is located at about one and a half width of the active region 50 (as shown at T / 2 in the figure). In other words, 'about half of the area (lower half) of this active area 50 is covered by the second layer 620 of the drain pattern, and this area is about Z772. Still referring to the third (b), it is worth noting that the second long edge 520b of the second layer 520 of the source pattern is kept at a distance from the second long edge 620b of the second layer 620 of the drain pattern. Contact * This distance S is equal to or greater than the minimum distance between two adjacent conductive layers in the same plane (formed by the same mask) in the design rule. In this embodiment, the width Γ of the active area 50 is about 80 am, and the minimum metal spacing is about 0.8 #m, which is about 100 to 1. Therefore, this minimum golden eyebrow spacing is compared to the active area 50. The width Γ is very small 'negligible'. In addition, with at least one second contact window {Please read the precautions on the back before filling this page) This paper size is based on the Chinese sample rate (CNS > from the specification (2 丨 OX297) 297 4429 5 4 A7 B7 V. Description of the invention 700), the second layer 520 of the source case and the first layer 5 of the source pattern 5 can form an electrical connection 11. Similarly, at least one second contact window 7〇〇 The first layer 620 of the polar pattern and the first layer 610 of the polar pattern can form an electrical connection. The following description will explain the layout area that can be saved by the layout structure of the present invention, please refer to the third (b ), And take the source pattern as an example. If the first layer 510 of the source pattern and the second layer 52 of the source pattern are known, the maximum current resistance is A (mA / ym) and B (mA / ym). ), The width of the second layer 520 of the source pattern is approximately i (jealousy + 7V2), and the width of the first layer 510 of the source pattern is approximately jealous from the second (b) diagram. When there is a large current I Flowing over it, the minimum line width 诛 of the case 500 can be calculated according to the following formulas (5) and (6): I = AW + B (fT, + r / 2) (5)!: ^ 丨i (please Wen read back & · the precautions to fill out this page) - Order W '

TB YTB Y

A + B ⑹ 因此，相較於習知技術，本發明可減少之寬度計算如下列（7)式或（8)式：經濟部智慧財產局員工消費合作社印» W-W'A + B ⑹ Therefore, compared to the conventional technology, the width of the invention can be reduced as shown in the following formula (7) or (8): Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs» W-W '

A + BA + B

f J_TB\ ~Ύ A + B (7) 15f J_TB \ ~ Ύ A + B (7) 15

-II 本紙張尺度遑用中鷗_家樑率（CNS ) Α4規格< 2丨〇χ297公漦} 4429 5 4 A7 _B7_ 五、發明說明（）亦即，-II Medium gull used in this paper scale_Home beam ratio (CNS) Α4 specification < 2 丨〇χ297 公漦} 4429 5 4 A7 _B7_ V. Description of the invention () That is,

TB w(8)TB w (8)

A + B 另外，若已知此多重指狀Μ O S元件之主動區域5 0的寬度為Γ，且長度為L，則根據（7)式或（8)式，可求得本發明相較於習知技術所減少的佈局面積'，其計算如下列 (9)式所示： (TR \ A-A'=L —=-] (9) 其中J為習知技術所用的佈局面積（如前所述），而為本發明之佈局面積。因此，使用本發明之佈局結構的確可以有效地減少所需的佈局面積，亦即使用本發明可以有效地增進積體電路之集積度。本發明之佈局結構並不侷限於兩層之導電層，亦適用於使用兩層以上之導電層，在導電層為η層（η為兩層以上）的第二實施例中，源極圖案之第一層如上所述，為一 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製份第部如狀C 指份個部數結複連含的包份其部，狀構指結個狀數指複重此多結及以連。以用示個所性圖之電極案成源圖形一極域層源區三於勤主與窗觸接個 - J1 少第形至之矩由案為藉圖均份極則部源層狀而 η 指；第中結之其連案第由之。案同圖相極全源完、且層並 6 本紙張尺度適用_困國家標準（CNS)A4规格（210 * 297公* ) • . 4429 b 4 A? B7 經濟部智慧財產局員工消費合作社印製五、發明説明（）第二層的佈局圖案與第一實施例相同，因此不再予以賛述。同樣地，汲極圖案之第一層如上所述，為一多重指狀結構，其包含複數個指狀部份，以及一個用以連結此複數個指狀部份的連結部份。其卡指狀部份藉由至少一個接觸窗與主動區域形成電性連結；而汲極圖案之第二層、汲極圖案之第三層...汲極圖案之第η層則均為矩形，並且完全相同。由於汲極圊案之第二層的佈局圖案與第一實施例相同，因此亦不予以贅述。然而值得注意的是，雖然在本發明中，源極圖案之第二層以及汲極圖案之第二層有部份重疊於主動區域之上，但是使用本發明之佈局結構並不需要增加額外的製程步驟以隔離此第二導電層及主動區域，因為在形成主動區域之後，必定會形成一絕緣層t蓋於主動區域之上，然後再形成導電層於其上，因此，此絕緣層即可使源極圖案之第二層以及汲極圖案之第二層與主動區域產生隔離，而不需要增加額外的製程步驟。第二實施例然而*第一實施例之佈局®案之設計固然可節省大量面積，但若是製程有所偏移，則在T/2處很容易發生電流崩毁點而使源極圖案或是汲極圖案燒毀。更詳細地說，對 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度遍用中《國家樣率（CNS > A4规格（2丨0X297公釐）經濟部智慧財產局員工消贫合作社印製 4 429 5 4 A7 B7五、發明説明（）於如第三圖（b)所示之第一實施例而言，其源極圖案之第一層5 1 0及汲極圖案之第一層6 1 0的t段部份只能承受每個MO S電晶體的一半電流*故容易因為臨界電流而在T/2 處燒毁。為此，本發明在此第二實施例中，將第一實施例所示之"源極圊案之第二層5 2 0"與"汲極圖案之第二層 62 Ο M作一修改，該修改將”源極圖案之第二層 5 2 0 "與”汲極圖案之第二層 620”由原本的矩形改變成：如第四圖（a)所示之源極圖案之第二層720及汲極圊案之第二層820，其中特別的是，源極圖案之第二層 720與與汲極圊案之第二層 820分別具有一鋸齒狀邊緣720b及820b，並且該鋸齒狀邊緣之尖端部份至少必須涵蓋指狀部份的一半長度處 (T/2處），以源極圖案之第二層720為例，其鋸齒狀邊緣 7 2 0 b的尖端部份即位於源極指狀部份5 1 0 a之"大於T / 2 處” ’以便涵蓋該源極指狀部份5 1 Oa的一半長度（172)處。其中，該鋸齒狀邊緣720b、8 20b係指源極圖案之第二層 720與汲極圖案之第二層820相鄰的邊緣。除了上述的修改之外，第一實施例與第二實施例的其餘部份係完全相同的，並且第一實施例與第二實施例中相同的圖號亦表示相同之元件。於是，當源、極電流流經原本的崩毀點時，由於該崩毀點係被鋸齒狀邊緣7 2 0 b的尖端部份所涵蓋，因此源極圖案之第一層5 1 0與源極圖案之第二層720便可藉由電流分享 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度逍用中國國家棣率（CNS ) A4说格（210X297公漦）：VP9 5 4 at __B7_ 五、發明説明（）而避免崩毀點的燒毀。同樣地，當汲極電流流經原本的崩毀點時，由於該崩毀點係被鋸齒狀邊緣8 2 0 b的尖端部份所涵蓋，因此汲極圖案之第一層610與汲極圖案之第二層 8 2 0便可藉由電流分享而避免崩毀點的燒毀。值得注意的是，在本發明中，若源極圊案之第二層與汲極®案之第二層不只一層時，該鋸齒狀邊緣並佈局並不限於使用在其中的一層，亦即具有該鋸齒狀邊緣的導電層是可視需要決定的。以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍内。 (請先閲讀背面之注意事項再填寫本頁) -s 經濟部智慧財產局員工消費合作社印製本纸張尺度逍用t國«家樑準（CNS > A4規•格（210X297公釐}A + B In addition, if it is known that the active region 50 of the multi-finger M OS element has a width Γ and a length L, then according to formula (7) or (8), the present invention can be compared with The layout area reduced by the conventional technique is calculated as shown in the following formula (9): (TR \ A-A '= L — =-] (9) where J is the layout area used by the conventional technique (as before (Described above), and is the layout area of the present invention. Therefore, using the layout structure of the present invention can indeed effectively reduce the required layout area, that is, the use of the present invention can effectively improve the integration degree of integrated circuits. The layout structure is not limited to two conductive layers, and is also suitable for using two or more conductive layers. In the second embodiment where the conductive layer is an η layer (η is two or more layers), the first layer of the source pattern As mentioned above, for the first (please read the notes on the back before filling out this page), the Ministry of Economic Affairs, Intellectual Property Bureau, Employees' Cooperative Cooperative Printed Sections of the Ministry of Economic Affairs, etc. The figure refers to the number of knots, the number of duplicates, and the connection. The electrode pattern is the source pattern. The source region of the polar domain layer is in contact with the window.-The moment of the shape of J1 is from the case where the source is layered and the η refers to the uniform pole. This case is the first. The case is completely complete with the same picture, and the paper size is 6 layers. _ National Standard (CNS) A4 specification (210 * 297 public *) •. 4429 b 4 A? B7 Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives. 5. Description of the Invention () The layout pattern of the second layer is the same as the first embodiment, so it will not be described again. Similarly, the first layer of the drain pattern is as described above. The multi-finger structure includes a plurality of finger portions and a connecting portion for connecting the plurality of finger portions. The card finger portion forms electrical properties with the active region through at least one contact window The second layer of the drain pattern, the third layer of the drain pattern ... the nth layer of the drain pattern are all rectangular and exactly the same. Because the layout pattern of the second layer of the drain pattern and The first embodiment is the same, so it will not be described in detail. Although the second layer of the source pattern and the second layer of the drain pattern partially overlap the active region in the present invention, using the layout structure of the present invention does not need to add additional process steps to isolate this. The second conductive layer and the active region, because after the active region is formed, an insulating layer t must be formed over the active region, and then a conductive layer is formed thereon. Therefore, this insulating layer can make the source pattern The second layer and the second layer of the drain pattern are isolated from the active area, without the need to add additional process steps. Second Embodiment However * The layout of the first embodiment of the Layout® design can save a lot of area, but if If the process is offset, the current collapse point at T / 2 is prone to burn the source pattern or the drain pattern. In more detail, yes (please read the precautions on the back before filling this page) This paper is commonly used in the paper "National Sample Rate (CNS > A4 Specification (2 丨 0X297 mm)) Poverty Alleviation for Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 4 429 5 4 A7 B7 V. Description of the invention () For the first embodiment shown in the third figure (b), the first layer 5 1 0 of the source pattern and the first layer of the drain pattern The t-segment portion of a layer of 6 10 can only bear half the current of each MOS transistor *, so it is easy to burn at T / 2 due to the critical current. For this reason, in the second embodiment of the present invention, The second layer 5 2 0 " of the source pattern shown in the first embodiment and the second layer 62 ΟM of the drain pattern are modified, and the modification will be "the second layer of the source pattern 5 2 0 " The second layer 620 of the drain pattern is changed from the original rectangle to: the second layer 720 of the source pattern as shown in the fourth figure (a) and the second layer of the drain pattern 820, in particular, the second layer 720 of the source pattern and the second layer 820 of the drain pattern have a jagged edge 720b and 820b, respectively, and the jagged shape The tip of the edge must cover at least half the length of the finger (T / 2). Taking the second layer 720 of the source pattern as an example, the tip of the jagged edge 7 2 0 b is located at the source. The polar finger 5 1 0 a " is greater than T / 2 "so as to cover half the length (172) of the source finger 5 1 Oa. Among them, the jagged edges 720b, 8 20b are Refers to the edge adjacent to the second layer 720 of the source pattern and the second layer 820 of the drain pattern. Except for the modification described above, the rest of the first embodiment is exactly the same as the rest of the second embodiment, and In one embodiment, the same drawing numbers as in the second embodiment also indicate the same elements. Therefore, when the source and electrode currents flow through the original collapse point, the collapse point is caused by the jagged edge 7 2 0 b. The tip part is covered, so the first layer 5 1 0 of the source pattern and the second layer 720 of the source pattern can be shared by current (please read the precautions on the back before filling this page) China's national rate (CNS) A4 grid (210X297): VP9 5 4 at __B7_ V. Description of the invention () Avoid burnout of the collapse point. Similarly, when the drain current flows through the original collapse point, the collapse point is covered by the tip portion of the jagged edge 8 2 0 b. One layer 610 and the second layer 8 2 0 of the drain pattern can avoid burnout of the collapse point by current sharing. It is worth noting that in the present invention, if the second layer of the source electrode and the drain electrode When the second layer of the ® case is more than one layer, the parallel arrangement of the jagged edges is not limited to the layer used in it, that is, the conductive layer with the jagged edges can be determined as needed. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application. (Please read the notes on the back before filling out this page) -s Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy

Claims

4Α29 5 4 Α8 Β8 C8 D8 六、申請專利範圍經濟部智慧財產局員工消費合作社印製 1. 一種提昇集積度之佈局结構，至少包含：主動區域，該主動區域包含複數個閘極區域、複數個源極區域以及複數個汲極區域；閘極圖案，位於該閘極區域上；源極圊案*該源極圖案更包含：源極圖案之第一層，為一多重指狀結構，數個源極指狀部份以及一個源極連結部份，每一該狀部份的一端均藉由源極連结部份的連結而形成圖案，其中該源極指狀部份位於該源極區域上，並極連結部份具有一最長外緣；至少一層源極圈案之第二層，形成於該源之第一層以及該主動區域上，該源極圖案之第二層形’並且具有第一長緣以及第二長緣，該第一長緣二長緣分別位於矩形之相反兩惻，其中該源極圖案層的第一長緣與該源極連結導線的最長外緣切齊，源極®案之第二層的第二長緣約位於該主動區域寬度處* 汲極圖案，該汲極圖案更包含·· 汲極00案之第一層，為一多重指狀結構，包含複數個汲極指狀部份以及一個汲極連結部份，每一該汲極指狀部份的一端均藉由汲極連結部份的連結而形成一整體圖案’其中該汲極指狀部份位於該汲極區域上，並且該汲極連結部份具有一最長外緣：至少一層汲極圖案之第二層，形成於該汲極圖案包含複源極指一整體且該源極圖案為一矩以及第之第二並且該之—半请先閲一讀背 ιέ- 之注意事項 -S-填頁訂 20 本紙張尺度逍用中»躪家樣率（CNS〉A4*L格（210X297公釐） A8 B8 C8 D8 4420 5 4 AA99S A 々、申請專利範圍之第一層以及該主動區域上，該汲極圖案之第二層為一矩形，並且具有第一長緣以及第二長緣，該第一長緣以及第二長緣分別位於矩形之相反兩側，其中該汲極圖案之第二層的第一長緣與該汲極連結導線的最長外緣切齊，並且該及極圊案之第二層的第二長緣約位於該主動區域之一半寬度處。 2. 如申請專利範圍第1項之結構，其中上述主動區域的上半部面積係被上述源極囷案之第二層所覆蓋。 3. 如申請專利範圍第1項之結構，其中上述主動區域的下半部面積係被上述汲極圊案之第二層所覆蓋。 (請先M-讀背*-之注意事項再填寫本頁)4Α29 5 4 Α8 Β8 C8 D8 6. Application for Patent Scope Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. A layout structure to improve the integration degree, including at least: the active area, the active area contains multiple gate areas, multiple A source region and a plurality of drain regions; a gate pattern located on the gate region; a source pattern * the source pattern further includes: a first layer of the source pattern, which is a multi-finger structure; A source finger portion and a source connection portion, one end of each of the shape portions is formed by the connection of the source connection portion, wherein the source finger portion is located at the source electrode On the region, the pole connecting part has a longest outer edge; at least one second layer of the source circle is formed on the first layer of the source and the second layer of the source pattern on the active region; and The first long edge and the second long edge are respectively located on opposite sides of the rectangle, wherein the first long edge of the source pattern layer is aligned with the longest outer edge of the source connecting wire. The second layer of the Source® case The second long edge is located approximately at the width of the active region. * The drain pattern further includes the first layer of the drain 00 case, which is a multi-finger structure including a plurality of drain fingers. And a drain connection part, one end of each of the drain finger parts forms an overall pattern by the connection of the drain connection part, wherein the drain finger part is located on the drain region, And the drain connection part has a longest outer edge: at least one second layer of the drain pattern formed on the drain pattern including a complex source finger as a whole and the source pattern is a moment and the second and This—half, please read it first- Note-S-Folding and ordering 20 paper sizes in use »Family sample rate (CNS> A4 * L grid (210X297mm) A8 B8 C8 D8 4420 5 4 AA99S A 々. On the first layer of the patent application range and the active area, the second layer of the drain pattern is rectangular and has a first long edge and a second long edge. The two long edges are located on opposite sides of the rectangle, respectively, where the The first long edge of the second layer of the pole pattern is aligned with the longest outer edge of the drain connection wire, and the second long edge of the second layer of the sum electrode is located at about one and a half width of the active area. . For the structure of the first scope of the patent application, the upper half of the active area is covered by the second layer of the source case. 3. For the structure of the first scope of the patent application, the above active area The lower half of the area is covered by the second layer of the aforementioned drain case. (Please read the M-Reading *-Note before filling out this page)

少至由藉。份結 p. fepc 狀性指電極成源形述域上區其源構述結上之與項窗 1觸第接圍一範利專請中如第個訂如藉份。部結狀連指性極電汲成述形上域中區其極，波構述結上之與項窗 RM* 1 0 第接一圍範利個專一請少申至由第線-ί 經濟部智慧財產局員工消贫合作社印製專至結請由連申藉性 *0層電 6 一成第形之層第圍範第個 - 少案二圖第極之源案述圖上極中源其述 ’上構與結窗之觸項接本紙張尺度遑用中家鏢率（CNS ) A4A格（210X297公釐） 442954 經濟部智慧財產局員工消費合作社印製 A8 B8 CS D8々、申請專利範圍 7.如申請專利範圍第1項之結構，其中上述汲極圖案之第一層藉由至少一個第二接觸窗與上述汲極圖案之第二層形成電性連結。 8 -如申請專利範圍第1項之結構，其中上述源極連結部份之最長外緣係指該源極連結部份未與源極指狀部份連結之較長外緣》 9.如申請專利範圍第1項之結構，其中上述汲極連結部份之最長外緣係指該源極連結部份未與源極指狀部份連結之較長外緣。 I 0.如_請專利範圍第1項之結搆，其中上述源極指狀部份係成長條狀》 II .如申請專利範圍第1項之結構，其中上述汲極指狀部份係成長條狀。 1 2.如申請專利範圍第1項之結構，其中上述源極指狀部份的縱向長度大於上述主動區域的宽度。 1 3 ·如申請專利範圍第1項之結構，其令上述汲極指狀部份的縱向長度大於上述主動區域的寬度。 1 4.如申請專利範圍第1項之佈局結構，其中上述源極 (請先1讀背面之注意事項再填寫本頁) 22 本紙張尺度逋用中_«家檬率（0阳）八4洗格（2丨0父297公釐） 442954 A8 C8 D8 經濟部智慧財產局員工消贫合作社印製六、申請專利範圍圖案之第二層的第二長緣以及汲極圖案之第二層的第二長緣係為相鄰，並且保持一間距而未接觸，該間距係等於或大於設計規則中，同一平面t兩相鄰導電層間的最小距離。 1 5 .如申請專利範圍第1 4項之佈局結構，其中上述同一平面中兩相鄰導電層係指由同一道光罩所形成之導電層。 1 6 · —種提昇集積度之佈局結構，至少包含：主動區域，該主動區域包含複數個閘極區域、複數個源極區域以及複數個汲極區域；閘極圖案，位於該閘極區域上；源極®案，該源極圖案更包含：源極圖案之第一層，為一多重指狀結構，包含複數個源極指狀部份以及一個源極連結部份，每一該源極指狀部份的一端均藉由源極連結部份的連結而形成一整體圖案’其中該源極指狀部份位於該源極區域上，並且該源極連結部份具有一最長外緣；至少一層源極圖案之第二層，形成於該源極圊案之第一層以及該主動區域上，該源極圖案之第二層具有一長緣以及一鋸齒狀邊緣，該長緣以及該鋸齒狀邊緣分別位於相反兩側’其中該源極圖案之第二層的長緣與該源極連結導線的最長外緣切齊，並且該源極圖案之第二層的鋸齒狀邊緣涵蓋該源極指狀部份之縱向長度的_半處： 23 本紙張尺度遑用中矚β家檬率（CNS > A4規格（210 X 297公釐） (請先閱讀背而之注意事項再填寫本覓) 訂 ♦" ~ (/* m 4 429 5 4 A8 B8 C8 D8 1申請專利範圍汲極圊案，該汲極圖案更包含：汲極圖案之第一層，為一多重指狀結構，包含複數個汲極指狀部份以及一個汲極連結部份，每一該汲極指狀部份的一端均藉由汲極連結部份的連結而形成一整體圖索，其令該汲極指狀部份位於該汲極區域上，並且該汲極連結部份具有一最長外緣；至少一層汲極圖案之第二層，形成於該汲極圖案之第一層以及該主動區域上，該汲極圖案之第二層具有一長緣以及一鋸齒狀邊緣，該長緣以及鋸齒狀邊緣分別位於矩形之相反兩側，其中該汲極圖案之第二層的長該汲極連结導線的最長外緣切齊，並且該汲極圖案之第、的鋸齒狀邊緣涵蓋該汲極指狀部份之縱向長度的一半；^ 並且，該源極圖案之第二層的鋸齒狀邊緣與汲極圖、之第二層的鋸齒狀邊緣係為相鄰。Borrow as little as. Concluding p. Fepc-likeness refers to the fact that the electrode is in the source form, the upper part of the field, and the source structure of the structure is the same as the item window. 1 Touch the contact area. The knot-like phalanx pole electricity draws into the poles in the upper region of the shape, and the sum window RM * 1 0 on the wave structure of the knot. Please apply less to the first line from the first line -ί Economy The Intellectual Property Bureau of the Ministry of Intellectual Property Bureau printed the special issue to the end of the cooperation, please apply for borrowing * 0 layer electricity 6 into a layer of the first layer of the first range-the rare case of the second figure, the source of the pole The source touches the contact between the upper structure and the window. This paper uses the Chinese house dart rate (CNS) grid A4A (210X297 mm) 442954 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 CS D8. Patent scope 7. The structure according to item 1 of the patent scope, wherein the first layer of the drain pattern is electrically connected to the second layer of the drain pattern through at least one second contact window. 8-For the structure of item 1 of the scope of patent application, in which the longest outer edge of the source connection part refers to the longer outer edge of the source connection part that is not connected to the source finger part. The structure of item 1 of the patent scope, wherein the longest outer edge of the drain-connected portion refers to the longer outer edge of the source-connected portion that is not connected to the finger-shaped portion of the source. I 0. If the structure of item 1 of the patent scope, where the above-mentioned source finger portion is a long strip II. If the structure of item 1 of the patent scope, where the drain finger portion is a long strip shape. 1 2. The structure according to item 1 of the scope of patent application, wherein the longitudinal length of the source finger portion is greater than the width of the active region. 1 3 · If the structure of item 1 of the scope of patent application is adopted, the longitudinal length of the drain-finger portion is greater than the width of the active area. 1 4. The layout structure of item 1 in the scope of patent application, where the above source (please read the precautions on the back before filling out this page) 22 This paper is in use _ «Home Lemon Rate (0 Yang) 8 4 Xiege (2 丨 0 father 297 mm) 442954 A8 C8 D8 Printed by the Anti-Poverty Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The second long edge of the second layer of the patent application pattern and the second layer of the drain electrode pattern The second long edge is adjacent and maintains a distance without contact. The distance is equal to or greater than the minimum distance between two adjacent conductive layers on the same plane t in the design rule. 15. The layout structure according to item 14 of the scope of patent application, wherein the two adjacent conductive layers in the above-mentioned plane refer to the conductive layers formed by the same photomask. 1 6 · —A layout structure for increasing the integration degree, including at least: an active region, the active region including a plurality of gate regions, a plurality of source regions, and a plurality of drain regions; a gate pattern located on the gate region ; Source® case, the source pattern further includes: the first layer of the source pattern is a multi-finger structure, including a plurality of source finger portions and a source connection portion, each of the source One end of the polar finger portion forms a whole pattern by the connection of the source connection portion, wherein the source finger portion is located on the source region, and the source connection portion has a longest outer edge. ; At least one second layer of the source pattern is formed on the first layer of the source pattern and the active area, the second layer of the source pattern has a long edge and a jagged edge, the long edge and The jagged edges are respectively located on opposite sides, wherein the long edge of the second layer of the source pattern is aligned with the longest outer edge of the source connecting wire, and the jagged edge of the second layer of the source pattern covers the Longitudinal of source finger The _half of the length: 23 This paper size is used in the attention of β family lemon rate (CNS > A4 size (210 X 297 mm) (please read the precautions before filling in this search) Order ♦ " ~ (/ * m 4 429 5 4 A8 B8 C8 D8 1 patent application scope of the drain electrode, the drain pattern further includes: the first layer of the drain pattern is a multi-finger structure, including a plurality of drain fingers And a drain connection portion, one end of each of the drain finger portions forms a whole picture by the connection of the drain connection portion, and the drain finger portion is located at the On the drain region, and the drain connection portion has a longest outer edge; at least one second layer of the drain pattern is formed on the first layer of the drain pattern and on the active region, the first of the drain pattern The second layer has a long edge and a jagged edge, and the long edge and the jagged edge are respectively located on opposite sides of the rectangle, wherein the longest outer edge of the second layer of the drain pattern that is long and the drain connecting wire is aligned And the jagged edge of the drain pattern covers the drain finger Half of the longitudinal length; ^ and, FIG jagged edges and drain of the second layer of the source pattern of the serrated edge of the second layer adjacent lines.

(請先蚱讀背岛之注意事項再填寫本頁) 訂經濟部智慧財產局員工消費合作社印製 17.如申請專利範圍第16項之結構，其中上述主動區域的上半部面積係被上述源極園案之第二層所覆蓋。 1 8.如申請專利範圍第1 6項之結構，其中上述主動區域的下半部面積係被上述汲極圊案之第二層所覆蓋》 I 9.如申請專利範圍第1 6項之結構，其中上述源極指狀部份藉由至少一個第一接觸窗與上述源極區域形成電性連結0 24 ^紙張尺度逋用tB·家樣率（CNS > A4規《格（210X297公釐）線" 4429 5 4 經濟部智慧財產局員工消贫合作社印製 A7 B7_五、發明説明（） 2 0 ,如申請專利範圍第1 6項之結構|其中上述汲極指狀部份藉由至少一個第一接觸窗與上述汲極區域形成電性連結。 2 1.如申請專利範圍第1 6項之結構，其中上述源極圖案之第一層藉由至少一個第二接觸窗與上述源極圖案之第二層形成電性連結。 2 2 ·如申請專利範圍第1 6項之結構，其中上述汲極圖案之第一層藉由至少一個第二接觸窗與上述汲極圖案之第二層形成電性連結。 2 3 .如申請專利範圍第丨6項之結構，其中上述源極連結部份之最長外緣係指該源極連結部份未與源極指狀部份連結之較長外緣》 24.如申請專利範圍第16項之結構，其中上述没極連結部份之最長外緣係指該源極連結部份未與源極指狀部份連结之較長外緣。 2 5 .如申請專利範圍第1 6項之結構，其中上述源極指狀部份係成長條狀。 2 6.如申請專利範圍第1 6項之結構，其中上述汲極指狀部份係成長條狀。 (請先•閱讀背ώ·之注意事項再填寫本頁) 25 本紙張尺度遍用中國國家橾準（CNS > Α4規格（210X297公釐） 442954 A7 B7 五、發明説明（） 2 7.如申請專利範圍第1 6項之結構，其中上述源極指狀部份的縱向長度大於上述主動區域的寬度。 2 8 .如申請專利範圍第1 6項之結構，其中上述汲極指狀部份的縱向長度大於上述主動區域的寬度。 2 9 .如申請專利範圍第1 6項之佈局結構，其中上述源極圖案之第二層的鋸齒狀邊緣以及汲極圖案之第二層的鋸齒狀邊緣保持一間距而未接觸，該間距係等於或大於設計規則中，同一平面中兩相鄰導電層間的最小距離。 30.如申請專利範圍第29項之佈局結構，其十上述同一平面中兩相鄰導電層係指由同一道光罩所形成之導電廣。 (請先閱讀背面之注意事項再填寫本頁) 訂經濟部智慧財產局員工消費合作杜印製 26 本紙張尺度逋用中a國家揉率（CNS ) A4*ttt· ( 210X297公羞）(Please read the precautions for the back of the island before you fill out this page.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 17. If you apply for the structure of item 16 of the patent scope, the upper area of the above active area is covered by the above. Covered by the second floor of the Yuanyuan case. 1 8. Structure according to item 16 of the scope of patent application, in which the area of the lower half of the above active area is covered by the second layer of the aforementioned drain case. I 9. Structure according to item 16 of the scope of patent application Wherein, the source finger portion is electrically connected to the source region through at least one first contact window. 0 24 ^ Paper size: tB · Family sample rate (CNS > A4 rule "Grid (210X297 mm) ） Line 4429 5 4 A7 B7 printed by the Anti-Poverty Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () 2 0, such as the structure of the 16th scope of the patent application. The at least one first contact window is electrically connected to the drain region. 2 1. The structure according to item 16 of the patent application scope, wherein the first layer of the source pattern is connected to the above through at least one second contact window. The second layer of the source pattern forms an electrical connection. 2 2 · The structure of item 16 in the scope of the patent application, wherein the first layer of the drain pattern is connected to the first layer of the drain pattern through at least one second contact window. The two layers form an electrical connection. 2 3. The structure of item 丨 6, wherein the longest outer edge of the source connection part refers to the longer outer edge of the source connection part that is not connected to the finger part of the source. The structure, in which the longest outer edge of the non-polar connection part refers to the longer outer edge of the source connection part that is not connected to the finger part of the source. 2 5. The structure, in which the above-mentioned source finger portion is a long strip. 2 6. According to the structure of the patent application scope item 16, the above-mentioned drain electrode portion is a long strip. (Please read the back first. Note: Please fill in this page again.) 25 The standard of this paper is Chinese national standard (CNS > A4 size (210X297mm) 442954 A7 B7. 5. Description of invention () 2) The structure, wherein the longitudinal length of the source finger portion is greater than the width of the active region. 2 8. The structure of item 16 in the patent application scope, wherein the longitudinal length of the drain finger portion is greater than that of the active region. Width 2 9. Layout structure as in item 16 of the scope of patent application , Where the jagged edge of the second layer of the source pattern and the jagged edge of the second layer of the drain pattern maintain a gap without contact, the gap is equal to or greater than the design rule, two adjacent conductive in the same plane The minimum distance between the layers. 30. For the layout structure of item 29 in the scope of patent application, the two adjacent conductive layers in the same plane mentioned above refer to the conductive layer formed by the same mask. (Please read the precautions on the back first (Fill in this page) Order the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, and print 26 copies of this paper standard. The country's rubbing rate (CNS) A4 * ttt · (210X297 public shame)