TW439197B - Electronic coating having low dielectric constant - Google Patents
Electronic coating having low dielectric constant Download PDFInfo
- Publication number
- TW439197B TW439197B TW087108339A TW87108339A TW439197B TW 439197 B TW439197 B TW 439197B TW 087108339 A TW087108339 A TW 087108339A TW 87108339 A TW87108339 A TW 87108339A TW 439197 B TW439197 B TW 439197B
- Authority
- TW
- Taiwan
- Prior art keywords
- coating
- substrate
- resin
- coatings
- heated
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 114
- 239000011248 coating agent Substances 0.000 title claims abstract description 78
- 239000011347 resin Substances 0.000 claims abstract description 58
- 229920005989 resin Polymers 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 238000001723 curing Methods 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- -1 nitrogen nitride Chemical class 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000007654 immersion Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000005524 ceramic coating Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 239000005360 phosphosilicate glass Substances 0.000 claims description 4
- 235000015170 shellfish Nutrition 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000013007 heat curing Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 2
- 230000002411 adverse Effects 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002847 impedance measurement Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 241000277331 Salmonidae Species 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 244000005700 microbiome Species 0.000 claims 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005903 acid hydrolysis reaction Methods 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DUFGEJIQSSMEIU-UHFFFAOYSA-N [N].[Si]=O Chemical compound [N].[Si]=O DUFGEJIQSSMEIU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000005219 trimethyl ethers Chemical class 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
4 3 91 9 7 ^ Α7 Β7 經濟部中央標準局貝工消費合作社印製 五'發明説明(,) 本發明係一種製作有介電常數(DK)低於2.9,較隹2.5至 2-8的氫發倍半氧烷(H_樹脂)塗料之方法。此等塗料適用 於製造半導體裝置如中間層介電塗層。 Η -樹脂作旋塗材料然後固化用作中間層介電塗層為技術 上所知。在已知的熱處理與固化條件(即在每三系列加熱板 保持1分鐘後在氮氛爐内1小時)下獲致DK 2 9_3 〇。 有DIC 2_9-3.0的固化材料適作〇 25微米及較大裝置。但 較小裝置結構(即〇 1 3-〇_ 1 8微米)必須較低介電常數。曾經 建議幾種方法固化Η_樹脂以產生較低介電常數。不過此等 方法常需困難且昂貴處理以製造低D Κ塗料。舉例美國專 利5,441,765發表一種由η-樹脂製造塗料之方法’其‘中固 化塗層有DK 2.8至4,5。’765透露的方法包括塗敷Η_樹脂 於裝置上;將已塗覆的裝置加熱充分時間產生含si_〇的陶 瓷塗層後暴露含Si-Ο的陶瓷塗層於含氫氣的退火氛圍。 美國專利5,547,703亦申請一種製造低DK塗料的方法。 包括塗敷H-樹脂於電子基體上;在氨與濕氣中加熱;然後 在無水氨内加熱’最後在氧中加熱使塗層退火。此法所製 塗層之DK據報告在2.42與4.92間。 知.已發現當Η -樹脂在控制條件(加熱速率、溫度、時間 及環境)下固化時易產生介電常數低的塗層。 因此本發明之一目的在提供—種方法由Η_樹脂製造介電 常數2.5至2,8的不溶性塗料。- 吾人用以製造此等低D Κ塗層之方法包括(a )將一含η -树脂的組合物塗敷於基體上形成基體上之膜;及(Β )於2〇〇 -4- 本紙張尺度適用中國國家榡準(CNS ) Α4規格(21〇>< 297公釐) (請先閱讀背面之注意事項再填寫本頁)
A7 B7 2 經濟部中央標準局負工消费合作社印裝 4391 97 五、發明説明( 成D K 恤度加熱基體其中基體以一速度加熱充分時間製 係1二it介8電之常不^性M。此處所用DK(介電常數) H_樹脂包括由HSi(〇HM〇R)y〇Z/2單位組成 ^虱洛7<,烷樹脂,其中每R獨立係有機基或取代的有機 2 原子結合於料形成能水解的取代基;㈣至 :心甲0、, 2 ; Z=1 i 3 ;而X + y + Z = 3。R #例包括烷基 二 、丙及丁基;芳基如苯基;及晞烴基諸如烯两 友乙P, 土。此等樹脂可係本質上完全縮合的,n 為/或更大或其等可係僅部分水解者(如含若干 或部刀.唯„ (即含多少、si_〇H)者。雖非由結構代表,此等 樹月:亦可含少數(例如1〇%以下)其上有隨意〇至2氫原子 附著I石夕原子或少數由於多種因素在其形成或處理作用 附著的SiC鍵等。 H-树足結構無特定限制,可係一般稱作梯型、籠式或 其混合物者。以上氫秒倍半氧貌樹脂及其製法為技術上所 知。例如美國專利3,M5,272表現製造本質上完全縮合的 H-樹知(其中可含高達1〇〇_3〇〇 ppm矽烷醇),用法含在水 合苯績酸水解介質内水解三氣秒甲貌,然後用水或硫酸水 溶液清洗所得樹脂。同樣,美國專利5s〇1〇il59說明—種 万法包括在水合芳磺酸水解介質中水解氫化矽烷類生成樹 脂後接觸一中和劑。 - 其他氫化矽氧烷諸如美國專利_ 4,999,397及〗〇,丨印所 述者,由烷氧基或醯氧基矽烷在酸性醇型水解介質内水解 -5 本紙張尺度適用中國國家標準(CNS) A4規格(210x297公楚) (請先聞讀背面之注意事項再填湾本頁j
經濟部中央標準局貝工消費合作社印袋 ----'_______ B7 五、發明説明(3 ) 產生’在 JP-As 59-178749, 60-86017 及 63-107122 中所 述’或任何其他類似氫化梦氧燒,均可在此作用e 本發明一較佳具體例内亦可用以上Η -樹脂之特別分子量 邵分。美國專利5,063,267及5,4丨6,19〇等指示此等部分及 其製法。一較佳部分所含材料中至少75%的聚合型物類有 多數平均分子量1200或更大,更佳部分含材料内至少75〇/〇 的聚合型物類有數均分子量在Uoo與1〇〇 〇〇〇之間。 吾人樹脂亦可含其他成份祇要此等成份不干擾塗層之 i整或升高最後塗層之介電常數。已知添加劑包括觸媒諸 如舶、姥或銅觸媒提高該樹脂固化的速度與/或程度如美國 專利4’822,697中說明。陶瓷氧化物先質亦可與h_樹脂組 合使用。此處適用的陶瓷氧化物先質包括各種金屬如鋁、 鈦、錯、鈕 '鈮及/或釩之化合物以及各種非金屬諸如硼或 鱗之化合物等可溶於溶液内、水解並隨後於較低溫熱解生 成陶瓷氧化物者。此處合用的陶瓷氧化物先質經詳述並衍 生自美國專利 4,808,653,5S008,320 及 5,290,394 等-Η -樹脂乃為一典型溶劑分散液塗敷於基體。適宜溶劑包 括能溶解該樹脂生成均勻液態混合物而不影響所得塗層之 任何用劑或用劑混合物。此等溶劑包括醇類如乙醇或異丙 醇;芳烴如苯或曱苯;烷類如正庚烷,十二碳烷或壬烷; 酮類如甲基異丁基甲酮;酯類;二醇醚類及矽氧烷類如線 型二甲基多矽氧烷類(例如六甲基乙矽氧烷,八甲基丙矽氧 烷及其等混合物)或環狀二甲基多矽氧烷類。溶劑含量足夠 溶解Η -樹脂至塗敷所須濃度。典型、溶劑含量為20 — 99重 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇x297公瘦)
(請先閱讀背面之注意事項再填寫本頁J 訂
A 43S1 97 < Α7 Β7 經濟部令央標準局員工消费合作社印製 五、發明説明(4 ) 量百分比,較佳50-95重量百分比,以該樹脂與溶劑之總重 量為基礎。 樹脂之特別塗敷法包括旋塗塗覆,沉浸塗覆,喷霧塗 覆,流動塗敷及網印之類。較佳塗敷法為自轉塗覆。用溶 劑時任由溶劑自基體上Η -樹脂膜沈積所得的塗覆基體中蒸 發。可用任何蒸鍍措施,諸如曝露於周圍環境之簡單風 乾’在固化過程初段期間運用真空或溫熱(<2〇〇它)。須注 意用旋塗塗覆時儘量,減少以外知乾燥法而自轉驅出溶劑。 塗敷基體後於20CTC至55CTC溫度以一速度加熱充分時間 產生不溶性塗層並固化至有DK 2.5至2 8之不溶塗層。所 謂11不溶性塗層”意謂本質上不溶於自其中沈積形成該膜的 溶劑或如述在此用以塗敷Η -樹脂之任何溶劑。塗層較佳於 150C至500C之溫度加熱9塗層有厚度約15至25微米時 最好於200°C至400°C之溫度。塗層厚度低於i」微米時最 好加熱至溫度280°C至3 80。〇。 此處可用任何加熱方法,諸如使用對流烤箱,快速熱處 理,加熱板及輻射或微波能。所用方法必須能以足夠速度 加熱基體所須溫度產生有DK 2.5至2.8之不溶塗層。 Η -樹脂塗覆的基體加熱至固化溫度之速度(即斜坡上升 速率)獲得DK 2.5至2.8之不溶塗層極其重量。舉例,若樹 脂塗覆的基體太慢加熱至要求溫度則將無法得到本發明塗 層。因為許多因素如基體大小、-氣體流速、塗層厚度及加 熱方法均將影響加熱速度’不可能指定—量化加熱速度。 但吾人塗層之該速度常高過每分鐘2〇。匚。 本紙張尺度適用中國國家標隼(CNS ) Α4規格(210Χ297公釐) (請先閲讀背面之注意事項再填寫本頁)
經濟部中央標準局員工消費合作社印製 4 3: 號專利申請案 中文說明書修正頁(9〇年3月) 五、發明説明(5 ) 業界技術者將能根據加熱H-樹脂塗覆基體用條件與工具 決定適宜加熱速度。例如曾發現較薄塗層·必須以較快速 度,比較厚塗層加熱至所須溫度。較大基體比較小基體要 求較高設定溫度以保持相同加熱速度.較熱氮氣流幫助升高 加熱速度並降低塗層的DK » 塗層加熱固化的持續時間須視加熱期間的環境,加熱所達 溫度(即浸潰溫度),加熱之速度與H-樹脂膜之厚度而定。 在固化環境中浸潰溫度較高及/或氧濃度較高時熱化時間可 較短。塗層典型加熱1秒至2小時,較佳自5秒至3 0分 鐘。 Η -樹脂塗覆基體在其大加熱的環境正常為惰性環境諸如 氮,氬及氦,或含氧環境如空氣。氧無論其來源係空氣、 過氧化物、臭氧等宜於Η-樹脂塗覆的基體在450°C以下溫 度固化時存在環境中。
較佳H-樹脂塗覆的基體在含氮環境内於280°C與500°C間 溫度加熱製成有DK 2.5至2.8的不溶塗層。已轉化的塗層 的介電常數由金屬-絕緣器-半導體(MIS)電容器上完成DK測 量決定《製作MIS電容器係將0.15 μιη之鋁電極沈積於塗覆 有不溶性塗料薄膜的低電阻率(ρ^Ο.025Ω cm)晶片上。利用 掩蔽罩具作成直徑範圍3至1 0 m m之鋁電極點《用一 Hewlett-Packard™ 4194A阻抗分析儀橫越相同直徑的電極 點在0.1-1000 KHz之頻率範圍間作阻抗測量。配合阻抗數 據於一系列RLC模型,由其算出相當平行電容及DK。由 於阻抗以越過面點電極表現特徵,用二次介電厚度作D K -8- 本紙張尺度適用中國國家標準(CNS ) A4規格(210><297公釐) (請先閲讀背面之注意事項再填寫本頁)
A7 B7 五、發明説明(6 ) 測量。 (請先閱讀背面之注意事項再填寫本頁) 理論上當以充分速度加熱足夠時期時Η -樹脂於固化期間 遭受體積膨脹而無不利化學變化。此自由體積意外地在固 化的塗層内產生引起D Κ降低。此處解釋塗層膨脹係受固 化溫度、時間、加熱速度及該樹脂固化環境等影響。 此處所產不溶性塗層有2.5至2.8之D Κ,較佳2,5至 2.75,更佳 2.5 至 2.7 = 此處所產生不溶性,塗層可在任何基體上製造。不過,塗 層特別適用於電子基體。”電子基體"意義包括矽基裝置及 砷化鎵基裝置,計畫用於製造半導體组件包括焦平面陣 列、光電子裝置、光伏打電池、光學裝置、電晶體類裝 置、3 - D裝置、矽在絕緣體上裝置及超晶格裝置等。 電子基體能裸露(即無鈍化作用)或者基體能有初步鈍 化。此項初步純化能係陶瓷塗層如二氧化妙、氮化梦、碳 化矽、氧氮化矽、氧碳化矽、磷矽玻璃(PSG)、硼磷矽玻璃 (BPSG)及其他。初步鈍化塗層及其製法為業界技術熟練者 所知。 經濟部中央標準局員工消費合作社印製 此處所製塗料可塗敷於晶片然後運用任何敷金屬法。塗 料亦可實施於敷金屬法上作中階或中層介電或者塗料可應 用作上面鈍化作用塗層以完備製作裝置。 如有需要,可再在不溶性塗層外使用附加塗料。舉例, 此等能包括Si02塗料、含矽塗料、含碳化矽塗料、含氮化 矽塗料、含矽氧氮塗料、含-珍氮碳塗料與/或由非晶 SiC:H、金剛石及氮化矽之沈積作用(即CVD、PECVD等) -9 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X:297公釐} ί 43 91 97 Α7 Β7 經濟部中央標準局員工消費合作社印装 五、發明説明( 製造的金剛石類塗料。此等塗料之實用方法為技術上所 知’在例如美國專利4,756,977及5,〇n,7〇6内更詳說明。 塗敷附加塗料之方法並不重要,此項塗料經任何化學蒸 汽沈積法塗敷,諸如熱化學蒸汽沈積(TCVD)、光化學蒸汽 沈積、電漿加強化學蒸汽沈積(PECVD)、電子迴旋加速共 振(ECR)及噴射蒸汽沈積等。亦實用物理蒸汽沈積法諸如 藏鍍或雷子束蒸發鍍。此等方法包含隨意添加熱或電漿式 能量於蒸發物類引起所需反應或者集中能量在一固態物質 試樣上使其沈積。附加塗層之塗敷法並不嚴限。 因此’技術熟鰊者能由以下所提實例更深瞭解並認知此 處指出之發明。 以下實例中折射係數係用AXIC TygerTM薄膜分析儀 測得。 實例1 根據美國專利3,615,272製備一含18重量百分比H-樹脂 (HSl〇3/2)〇之氫矽倍半氧烷樹脂(H-樹脂),有9,800與 13,900間之多數平均分子量。溶解該樹脂於甲基異丁基甲 酮中1用一 HeadwayTM旋塗塗覆器以2000 rpm在10.2 cm (4 1•寸)直徑試樣晶片上塗覆2〇秒鐘。 用一控制環境的雙室爐固化晶片上塗層。爐室能用情氣 (氮)沖洗並保持環境於低氧濃度。裝載及卸料晶片之室保 持比用一金屬間壁分開的另一室溫度低得多(<2〇〇)。預 熱高溫室至固化溫度。進入高溫室的氮於固化溫度預熱, 而低溫室内氮未經預熱。自轉塗覆的晶片裝入低溫室後兩 -ιο 本紙張尺度適用中國國家標準(CNS ) Α4規格(210 X 29?公釐) j ^ 、*'策 訂 (請先聞讀背面之注意事項再填寫本頁) 9 3 4 9
A 五'發明説明(8 ) 室以氮流沖洗。氧濃度達0.5%程度(典型於關門後須3 0-4 0秒)時轉移晶片至次一高溫固化室中。留置晶片於固化 室内歷2分鐘同時不斷偵監氧濃度顯示少於0. 1%。將晶片 移回裝/卸室並冷却至200°C以下後取出至空氣。 晶片上Η -樹脂塗層於各種溫度(見表1)加熱。晶體上全 部塗層固化2分鐘(總時間包括加熱時間)。結果列入表 1。相信在較低溫(350°C至39(TC)固化的塗層因加熱速度不 適當不產生低DK塗.層。 . 表1 :氫矽倍半氧烷樹脂塗覆的晶片之氮固化結果 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標窣局uac工消費合作杜印製 晶片# 溫度CC) 厚度⑻ 折射係數 DK(測得的) 1 350 4596 1.386 __ 2 350 4682 1.394 3 360 4759 1.394 4 360 4657 1.391 — 5 370 4669 1.386 一 6 370 4683 1.388 __ 7 380 4676 1.385 醫 8 380 4706 1.385 一 9 390 4715 1.373 — 10 390 4720 1.385 — 11 400 4719 1.370 2.81 12 400 4606 1.375 2.76 13 410 4662 . 1.369 2.67 14 410 4645 1.371 2.72 15 420 4657' 1-366 2.69 16 420 4764 1.373 2.69 -11 - 本紙張足度適用中國國家標準(CNS ) A4規格(210X 297公釐) 4 3 91 97 ' A7 B7 五、發明説明(9 ) 晶片# 溫度(°C) 厚度(人) 折射係數 DK(測得的) 17 430 4821 1.355 2.69 18 430 4884 1.351 2.70 19 440 4885 1.352 2.65 20 440 4891 1.357 2.69 21 450 4971 1.354 2.60 22 450 4877 1.363 2.59 23 460 4987 1.354 2.60 24 460 5059 1.353 2.68 25 470 ' 4905 1.358 2.63 26 470 4823 1.368 2.55 27 480 4965 1.352 2.59 28 480 4969 1.347 2.61 29 490 4843 1.348 2.64 30 490 4979 1.351 2.67 1 A= 0: 1 nm f例2 (讀先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 根據美國專利3,615,272製備含40重量百分比樹脂 (HSi03/2)n有數平均分子量9,800與13,900間之Η-樹脂組 合物,溶解於低黏度多二甲基矽氧烷(3 0份六甲基乙矽氧 烷:70份八甲基丙矽氧烷)中,塗覆於102. cm(4")直徑晶 片上.。全部有1.6 μπι塗層的晶片用一 Headway™旋塗塗覆 機於3000 rpm經4 0秒鐘製得。全部有2.2 μιη塗層的晶片 用一 HeadwayTM自轉塗覆機以2000 rpm經40秒鐘製得。 如上說明所製晶片上Η -樹脂塗層隨後在加熱板上於空氣 環境内以各種溫度固化(見表2 )。結果列入表2。 Η-樹脂塗層之1 MHz時DK及632.8 nm時折射係數(RI) -12- 本紙張尺度適用中國國家標隼(CNS ) A4規格(2!0X297公釐) 4391 97 A7 B7 五、發明説明(10 ) 間的關係結構如下:DK=l+4.43 (RI-l) + 0.95 (RI-1)2。用此 測量折射率即能輕易預測介電常數。 經濟部中央標準局員工消費合作社印製 表2 :氫矽倍半氧烷樹脂塗覆的晶片之空氣固化結果 晶片 溫度(°C) 厚度(A) 固化時間(分) 折射係數 DK(預測的) 1 230 22703 1 1.410 2.98 2 230 21575 2 1.411 2.98 3 230 23828 4 1.396 2.90 4 250 23395 1 1.400 2.92 5 250 22752 2 1.340 2.62 6 250 23465 -4 1.360 2.72 7 270 22170 1 1.132 2.47 8 270 23130 2 1.320 2.51 9 270 23430 4 1.303 2.43 10 290 22760 1 1.337 2.60 11 290 23670 2 1.305 2.44 12 230 16032 1 1.326 2.55 13 230 16150 2 1.342 2.63 14 230 14764 4 1.359 2.71 15 250 16058 1 1.307 2.45 16 250 16106 2 1.300 2.41 17 250 16033 4 1.305 2.44 18 270 16579 1 1.321 2.52 19 270 16569 2 1.317 2.50 20 270 16411 4 1.297 2.40 21 290 16662 1 1.301 2.42 22 290 16609 2 1.303 2.43 23 290 16374 4 1.302 2.42 24 310 16523 1 1.296 2.39 25 310 16676 2 1.302 2.42 26 310 16712 4 1.294 2.38 27 330 16539 1 1.305 2.44 -13 - 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨〇X297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 ..泉 4 3 91 97 ^ A7 B7 五、發明説明(h) 晶片 溫度(。。) 厚度(A) 固化時間(分) 折射係數 DK(預測的) 28 330 16604 2 1.293 ^ 2.38 29 330 16412 4 1.289 2.36 1 Λ=0.1 nm 會例3 本例中根據實例1方法製備在晶片上的二Η -樹脂塗層。 第一塗層在爐内固化而第二塗層在加熱板上固化。二塗層 均在氮環境中於350°C固化3 0分鐘。結果列入表3。 表3 :塗層厚度之比較結果-· (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印象 本例證明晶片太小對固化與D K之影響。由結果可見, 較太晶片須要較高凝固溫度以得與較小晶片在較低凝固溫 度之相同加熱速度1^ 晶片大小 在氮流烤箱内固化2分鐘 厚度⑷ 折射係數 DK(預期) 4" 450〇C . 5649 1.348 2.66 4" 460〇C - 6444 1.343 2.63 8" 460〇C . 4901 1.385 2.85 8" 490〇C . .7064 1.346 2.65 1" = 2.54 cm lA=0.1 nm 實例5 -14 ~ 厚度 折射係數 DK(測得) 加熱速度 爐中固化 5222 A 1.381 2.87 〜2〇t:/分 加熱板上固化 7523 A 1.360 2.72 〜20〇C/秒 1 A=0.1 nm 實例4 本紙乐尺度適用中國國家標準(CNS ) A4规格(210X297公釐) A7 4 3 91 9"7 " B7 五、發明説明(12) 本例證明熱氮流對固化與D K之影響。 曰t!r m η 在氮流烤箱内固化2分鐘 厚度⑻ 折射係數 DK(預期) wl 450°C.氮流 ®350°C 4862 1.348 2.66 w2 450°C.氮流@300°C 4903 1.351 2.67 lA=0.1 nm ---------f.i取-- (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -15- 本紙張尺度適用中國國家標準(CNS ) A4規格(2I0X297公釐)
Claims (1)
- 43 91 97 b|89.^28 六、申請專利範圍 經濟部中央標準局貝工消費合作社印製 修 1. 一種製造塗層之方法,包括在基體上塗敷一種含氳矽倍 半氧燒樹脂的組合物在該基體上作成一膜,然後以每分 鐘至少2 0 °C之速率將膜於2 〇 〇 加熱至5 5 〇 t並加熱充分 時間以產生介電常數2.5至2.8之不溶性塗層D 2. 根據申請專利範圍第丨項之方法,其中膜加熱時期為1秒 至2小時。 3. 根據申請專利範圍第丨項之方法,其中組合物亦含一種 溶劑。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (讀先聞讀背而之注意事項存填寫本筲)修正 公告本 申請曰期 81^ ^ 案 號 87108339 類 别 L ^Vn(^ (以上各搁由本各填註) A4 C4 43919?⑼年3月修正頁) 經濟部智慧財產局員工消費合作社印製 11 專利説明書 、,名稱 中,文 具低介電常數之電子塗層 新型 英 文 ELECTRONIC COATNGS HAVING LOW DIELECTRIC CONSTANT 姓 名 1. 鐘京華 2. 劉悠芳 3. 劉惠強 4. 泉登庫瑪莎海 -、發明Λ 創作 國 籍 1.韓國 2.中國大陸3.中華民國4.美國 住、居所 1. 美國密西根州密蘭市崔爾梧德圓環4707號 2. 美國密西根州北密蘭市夏塞特路6〇〇〇號 3. 美國密西根州密蘭市鱒魚大道5808號 4_美國密西根州西布魯恩田市史普林布魯克法院3271號 姓 名 (名稱) 美商道康寧公司 國 藉 美國 三、申請人 住、居所 (事務所) 美國密西根州密蘭市 代表人 姓 名 羅勃L.麥克勒 1 - 裝. 訂 線 43 9197修正 (由本局填寫)6 6 A B 本案已向: 國(地區)申請專利,申請曰期: 案號: ,□有□無主張優先權 美國 1997年10月31曰08/962,500 0^□無主張優先權 有關微生物已寄存於: ,寄存日期: ,寄存號碼: ------ -----裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁各欄) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)經濟部中央標準局員工消費合作社印製 4 3: 號專利申請案 中文說明書修正頁(9〇年3月) 五、發明説明(5 ) 業界技術者將能根據加熱H-樹脂塗覆基體用條件與工具 決定適宜加熱速度。例如曾發現較薄塗層·必須以較快速 度,比較厚塗層加熱至所須溫度。較大基體比較小基體要 求較高設定溫度以保持相同加熱速度.較熱氮氣流幫助升高 加熱速度並降低塗層的DK » 塗層加熱固化的持續時間須視加熱期間的環境,加熱所達 溫度(即浸潰溫度),加熱之速度與H-樹脂膜之厚度而定。 在固化環境中浸潰溫度較高及/或氧濃度較高時熱化時間可 較短。塗層典型加熱1秒至2小時,較佳自5秒至3 0分 鐘。 Η -樹脂塗覆基體在其大加熱的環境正常為惰性環境諸如 氮,氬及氦,或含氧環境如空氣。氧無論其來源係空氣、 過氧化物、臭氧等宜於Η-樹脂塗覆的基體在450°C以下溫 度固化時存在環境中。 較佳H-樹脂塗覆的基體在含氮環境内於280°C與500°C間 溫度加熱製成有DK 2.5至2.8的不溶塗層。已轉化的塗層 的介電常數由金屬-絕緣器-半導體(MIS)電容器上完成DK測 量決定《製作MIS電容器係將0.15 μιη之鋁電極沈積於塗覆 有不溶性塗料薄膜的低電阻率(ρ^Ο.025Ω cm)晶片上。利用 掩蔽罩具作成直徑範圍3至1 0 m m之鋁電極點《用一 Hewlett-Packard™ 4194A阻抗分析儀橫越相同直徑的電極 點在0.1-1000 KHz之頻率範圍間作阻抗測量。配合阻抗數 據於一系列RLC模型,由其算出相當平行電容及DK。由 於阻抗以越過面點電極表現特徵,用二次介電厚度作D K -8- 本紙張尺度適用中國國家標準(CNS ) A4規格(210><297公釐) (請先閲讀背面之注意事項再填寫本頁)A7 B7 五、發明説明(6 ) 測量。 (請先閱讀背面之注意事項再填寫本頁) 理論上當以充分速度加熱足夠時期時Η -樹脂於固化期間 遭受體積膨脹而無不利化學變化。此自由體積意外地在固 化的塗層内產生引起D Κ降低。此處解釋塗層膨脹係受固 化溫度、時間、加熱速度及該樹脂固化環境等影響。 此處所產不溶性塗層有2.5至2.8之D Κ,較佳2,5至 2.75,更佳 2.5 至 2.7 = 此處所產生不溶性,塗層可在任何基體上製造。不過,塗 層特別適用於電子基體。”電子基體"意義包括矽基裝置及 砷化鎵基裝置,計畫用於製造半導體组件包括焦平面陣 列、光電子裝置、光伏打電池、光學裝置、電晶體類裝 置、3 - D裝置、矽在絕緣體上裝置及超晶格裝置等。 電子基體能裸露(即無鈍化作用)或者基體能有初步鈍 化。此項初步純化能係陶瓷塗層如二氧化妙、氮化梦、碳 化矽、氧氮化矽、氧碳化矽、磷矽玻璃(PSG)、硼磷矽玻璃 (BPSG)及其他。初步鈍化塗層及其製法為業界技術熟練者 所知。 經濟部中央標準局員工消費合作社印製 此處所製塗料可塗敷於晶片然後運用任何敷金屬法。塗 料亦可實施於敷金屬法上作中階或中層介電或者塗料可應 用作上面鈍化作用塗層以完備製作裝置。 如有需要,可再在不溶性塗層外使用附加塗料。舉例, 此等能包括Si02塗料、含矽塗料、含碳化矽塗料、含氮化 矽塗料、含矽氧氮塗料、含-珍氮碳塗料與/或由非晶 SiC:H、金剛石及氮化矽之沈積作用(即CVD、PECVD等) -9 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X:297公釐} /10 9^97 --- 第_83i9f專利申請* 如七的佟i 中文說明書修正頁(90年3月) 四 本發明係在電子基體上製造有介觉常數(dk) 2.5至2 8的不 溶性塗層之方法。方法包括在基體上塗敷一種含氫妙倍半 氡嫁樹脂的組合物形成基體上的膜;於細。cwwc溫度加 熱基體,其中基體加熱速度及時間足以產生有2.5至2·8介電 常數之不溶解塗層。 (請先閲讀背面之注意事項再填寫本頁各攔) 裝· 英文發明摘要(發明之名稱 ELECTRONIC COATNGS HAVING LOW ) DIELECTRIC CONSTANT 訂 經濟部智慧財產局員工消費合作社印製 This invention is a method for producing insoluble coatings having a dielectric constant (Dk) of 2.5 to .2.8 on electronic substrates. The method comprises applying a composition comprising hydrogen silsesguioxane resin onto a substrate to form a film on the substrate; and heating the substrate at a temperature of 200°C. to 550°C. wherein the substrate is heated at a rate and for a time sufficient to produce an insoluble coating having a dielectric constant; of 2.5 to 2.8. -2 本紙張尺度適用中國國家標準(CNS ) Α4規格(2i〇X 297公釐) 43 91 97 b|89.^28 六、申請專利範圍 經濟部中央標準局貝工消費合作社印製 修 1. 一種製造塗層之方法,包括在基體上塗敷一種含氳矽倍 半氧燒樹脂的組合物在該基體上作成一膜,然後以每分 鐘至少2 0 °C之速率將膜於2 〇 〇 加熱至5 5 〇 t並加熱充分 時間以產生介電常數2.5至2.8之不溶性塗層D 2. 根據申請專利範圍第丨項之方法,其中膜加熱時期為1秒 至2小時。 3. 根據申請專利範圍第丨項之方法,其中組合物亦含一種 溶劑。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (讀先聞讀背而之注意事項存填寫本筲)
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JP (1) | JPH11145130A (zh) |
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US8779281B2 (en) | 2010-10-25 | 2014-07-15 | Au Optronics Corporation | Solar cell |
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US6110534A (en) * | 1992-08-01 | 2000-08-29 | Tadahiro Ohmi | Method and apparatus for modifying surface material |
US6875687B1 (en) | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
EP1094506A3 (en) * | 1999-10-18 | 2004-03-03 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
US6599846B2 (en) * | 1999-12-28 | 2003-07-29 | Catalysts & Chemicals Industries Co., Ltd. | Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film |
WO2002003442A1 (en) | 2000-06-30 | 2002-01-10 | Tokyo Electron Limited | Fabrication process of a semiconductor device |
US6780499B2 (en) * | 2001-05-03 | 2004-08-24 | International Business Machines Corporation | Ordered two-phase dielectric film, and semiconductor device containing the same |
AU2003252352A1 (en) * | 2002-07-30 | 2004-02-16 | Tokyo Electron Limited | Method for forming insulating layer |
US6897163B2 (en) * | 2003-01-31 | 2005-05-24 | Applied Materials, Inc. | Method for depositing a low dielectric constant film |
JP2005161168A (ja) * | 2003-12-01 | 2005-06-23 | Tokyo Ohka Kogyo Co Ltd | 被膜形成方法 |
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US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
US5707681A (en) * | 1997-02-07 | 1998-01-13 | Dow Corning Corporation | Method of producing coatings on electronic substrates |
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1998
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