五、發明說明（l) 發明之領祕. °特別地，本發明係關於 '絕緣與分離的方法與裝 本發明係關於電子裝置之封裝 積體電路（ic)裝置封裝的電性 置。V. Description of the invention (l) The secrets of the invention. ° In particular, the invention relates to the method and device of insulation and separation. The invention relates to the packaging of electronic devices.
發明之背I 藉由晶ϋ之塑膠模製的半導體及1(：裝置封裝係為此項技 術所熟知的。典型地，封裝包含一模製塑膠覆蓋物，將lc 裝置保護在其巾。從封裝所延伸的互連可允許裝置與外部 電路之間的連接《現在’微型化可藉由將封裝尺寸縮小到 接近晶片尺寸’允許模製小到3mm \3[1]111的晶片尺寸封裝 (CSP )。為了增加封裝效率，封裝科術的潮流最近已傾 向於晶j陣列晶片尺寸封裝，其中一陣列之晶片被一起模 製在一單一模型空腔中。以平板陣列所生產的csp封裝範 例有QFN ( Quad F 1 at Non- 1 ead ’四邊扁平無引線）及晶 片陣列BGA❶然後，在被送至測試及較高層級封裝之前， 個別的封裝可被分離。 傳統的分離方法有：衝壓、壓印或鋸開。對於具有多重 晶片嵌於相同材料層的新型封裝而言，例如晶片陣列 CSP，無法使用衝壓及壓印。習知的鋸開技術亦無法提供 滿意的結果’其原因如下。鋸開過程中所產生的熱量，必 須要使用冷卻劑。典型係使用水當作冷卻劑，因為水亦可 作為導電體，用以除去鋸開過程中所產生的靜電。然而， 此種滿式方法會增加隨後使用時的裝置故障機會，而降低 封裝的可罪度。鑛開過程的機械應力會增加分層的風險。The back of the invention I The semiconductor and 1 (: device package are molded by a crystal of plastic are well known in the art. Typically, the package includes a molded plastic cover to protect the lc device in its towel. From The extended interconnect of the package allows the connection between the device and external circuits. "Now miniaturization can reduce the package size to close to the chip size" allows molding of chip size packages as small as 3mm \ 3 [1] 111 ( CSP). In order to increase packaging efficiency, the trend of packaging science has recently shifted to crystal array array size packaging, in which an array of wafers are molded together in a single model cavity. A csp packaging example produced with a flat array There are QFN (Quad F 1 at Non- 1 ead ') and chip array BGA. Then, individual packages can be separated before being sent to test and higher level packaging. Traditional separation methods are: stamping, Embossing or sawing. For new packages with multiple wafers embedded in the same material layer, such as the chip array CSP, stamping and embossing cannot be used. Conventional sawing techniques cannot provide satisfaction. The result is as follows. The heat generated during sawing must use a coolant. Typically, water is used as a coolant, because water can also be used as a conductor to remove static electricity generated during sawing. However, this full-scale method will increase the chance of device failure during subsequent use and reduce the guilt of the package. The mechanical stress of the mining process will increase the risk of delamination.
89102247.ptd 第4頁 五、發明說明（2) 對於需要切割銅層的封裝而言，例如QFN，毛逢^參著的 粒子會使得難以製造出令人滿意的分離產品，而且也會導 致鋸手韵高磨損率Q封裝的固持變得越來越困難。因此， 需要提供一種可減輕上述問題的丨C裝置之分離方法及裝 置。 發明之概述 因此，一方面，本發明提供一種1(：封裝之分離裝置，特 別是用於具有多層有機及金屬材料的封裝。該裝置使用一 種不會導致毛散粒子產4的冷式的、清潔的、及乾 燥的過程。 在另一方面，本發明提供一種切割I c封裝平板的新穎方 法’不需分離達到電性絕緣。這可允許在封裝仍處於 部分切割平板形式的時候進行測試，實質上減輕小型csp 封裝的處理困難。 本裝置及方法使用雷射切及技術。切除是在短雷射脈衝 下使基板材料被轉換成電漿的情成，而該短雷射脈 衝m提時間並不足以發.生顯著65埶！透。流量被控 制，且使用高速多重掃瞄。 在較佳具體例中，雷射光束的流量係小於約】00J/cm2， 使用雷射之波長低於55Onm，而光束的脈衝寬度保持在約 1 0 0-5 0 0ns之間。在工件上的光束點直徑被妥善控制於約 10-300 /im的範圍。執行多重掃瞄，使得每—掃猫可達到 一特定深度的切割。對於封裝的電性絕緣（亦即，基板的 銅層被斷開），可利用相同的多重掃瞄技術來達成控制深89102247.ptd Page 4 V. Description of the invention (2) For packages that need to cut the copper layer, such as QFN, the particles of Mao Feng ^ make it difficult to produce a satisfactory separation product, and it will also cause sawing It is becoming more and more difficult to hold Q-packages with high wear rate Q packages. Therefore, there is a need to provide a separation method and device for a C device that can alleviate the above problems. SUMMARY OF THE INVENTION Accordingly, in one aspect, the present invention provides a 1 (:) packaging separation device, particularly for packaging having multiple layers of organic and metallic materials. The device uses a cold-type, Clean and dry process. In another aspect, the present invention provides a novel method of cutting I c package plates' without separation to achieve electrical insulation. This allows testing while the package is still in the form of a partially cut plate, It substantially reduces the processing difficulty of small csp packages. The device and method use laser cutting and technology. Removal is the result of converting the substrate material into a plasma under a short laser pulse, and the short laser pulse m increases the time It is not enough to generate significant 65 埶! Transparent. The flow rate is controlled, and high-speed multiple scanning is used. In a preferred embodiment, the laser beam flow rate is less than about 00J / cm2, and the wavelength of the laser is lower than 55Onm, and the pulse width of the beam is maintained between about 100-500ns. The beam spot diameter on the workpiece is properly controlled in the range of about 10-300 / im. Multiple scanning is performed so that each —Sweep cat can reach a specific depth of cut. For the electrical insulation of the package (that is, the copper layer of the substrate is broken), the same multiple scanning technology can be used to achieve the controlled depth.
S9102247.ptd 第 5 頁 43 91 07 五、發明說明（3) ' 度切。'J。然後’虽仍處於部分切創平板形沐：的B字候__,___ 緣的封裝可進行測試。測試完^，較伕盏接由 重複雷射切除過程的方式，但相較於電性隔離步驟，其使 用增加次數的掃猫。 古較佳具體例中之裝置包括··一雷射產生器，用於產生一 尚頻且低脈衝能量的雷射光束，一光學系統，用於將該雷 射光束傳送至指定位置，以及一搬送系統， 置搬送到指定位置。 、將m 發明之說明 本發明之裝置及方法可允許清潔的、冷式的及乾 裝置之分離。本發明使用雷射能量以連績地切除一 裝置之平板上的各種基板材料層，並產生極微小的 在本發明中，雪射切除谗定義為：藉由雷射光束，S9102247.ptd Page 5 43 91 07 V. Description of the invention (3) 'Degree cut. 'J. Then, ‘although it ’s still in a partially cut flat-shaped shape: B-shaped __, ___ edge of the package can be tested. After the test ^, the method of repeating the laser ablation process was compared with that of 伕 伕, but it used an increased number of sweeping cats compared to the electrical isolation step. The device in the ancient preferred embodiment includes a laser generator for generating a laser beam of high frequency and low pulse energy, an optical system for transmitting the laser beam to a specified position, and a Transfer system, transfer to designated location. Explanation of the invention The apparatus and method of the present invention allow the separation of clean, cold and dry equipment. In the present invention, laser energy is used to successively cut off various substrate material layers on a flat plate of a device, and generate extremely small. In the present invention, snow removal is defined as: by the laser beam,
光束點尺寸（直徑） 燥的1C 模製1C 熱量。 將模製 種類。 之特性 餘料轉換成電漿及其他由光致分解所產生的揮發性 t!顯不一雙重頻率Q開關短波長Nd: YAG雷射光束 力..範例：·1 %#本發明可致使基板的切除Beam spot size (diameter) Dry 1C Molded 1C heat. Will be molded. The characteristics of the residual material are converted into plasma and other volatile t generated by photodecomposition. It shows a dual-frequency Q-switched short-wavelength Nd: YAG laser beam force. Example: · 1% # The present invention can cause a substrate Resection
89102247.ptd 第6頁 4 3 91 0 7 五、發明說明（4) 1 、通常，根據表I所顯示的條件，晶片陣列cps封裝的控制 深度電性絕緣可利用2_8次低能量（例如約2瓦）掃瞄所達 ，，視深度及欲切割的材料而定。對完全分離而言，可執 行1 0 - 2 0次掃瞒。在更加具體例中，脈衝寬度係小於 30 0ns ’脈衝能量為〇. w〇mj/532njn “重複率為 10-5 0让1^，光束點為2〇-2〇〇;^111，而流量大於5】/(：]112。 作為範例 ’一CABGA (chip-array bal 1 grid array，晶片陣列球柵陣列）封裝，具有一厚度〇. imm之銅 層封裝於一環氧有機金屬中之深度〇.Imm處，其可以光束 點直徑為30 之雷射光束掃瞄3_8次而被斷開。頻率為 ΙΟΚΗζΜ ’脈衝能量為02mJ，而脈衝寬度為】〇〇ns。 抑圖1顯示一雷射切割裝置之範例’其中藉由利用一掃描 器26及適當的光學部件28，而將一雙重頻率Q開關㈣： 雷射20之光束導向一平台24上的1(：裝置（未示）之平板 22、。=電腦控制系統30控制一控制器32，其依序控制平台 24並經由觸發器34觸發雷射，以使得雷射光束被導向至嵌 =ic ^置之間的邊界。一視察系統25連結至控制系統及平 口 ，設置用來控制切割路徑。沒有設置水冷卻系統，因此 整個過程是乾燥的。 圖2顯示用於切割一丨c裝置之平板之裝置的特定範例細 f圖。在此裝置中，其中嵌有IC裝置42之平板5〇被一搬送 系統搬送至一固持站4 〇。例如，固持站可為一平台及導 軌’或者一具有真空抽氣出口的平台。來自一雷射產生器 44的雷射光束被導入至一掃描器或檢流計46中，其將光束89102247.ptd Page 6 4 3 91 0 7 V. Description of the invention (4) 1. Normally, according to the conditions shown in Table I, the controlled depth electrical insulation of the chip array cps package can use 2-8 times of low energy (for example about 2 (Watts), depending on the depth and material to be cut. For complete separation, 10 to 20 sweeps can be performed. In a more specific example, the pulse width is less than 300ns. The pulse energy is 0.50mj / 532njn. "The repetition rate is 10-50. Let 1 ^, the beam spot is 20-2. 00; ^ 111, and the flow rate. Greater than 5] / (:] 112. As an example 'a CABGA (chip-array bal 1 grid array, chip array ball grid array) package, a copper layer having a thickness of 0.1 mm is packaged in a depth of an epoxy organic metal 〇.Imm, it can be cut off 3 to 8 times with a laser beam with a beam spot diameter of 30. The frequency is 10KΗζM 'The pulse energy is 02mJ, and the pulse width is] 〇ns. Figure 1 shows a laser Example of a cutting device 'in which a dual-frequency Q switch is used by using a scanner 26 and appropriate optical components 28: The beam of the laser 20 is directed to a plate 1 (device (not shown) on a platform 24) 22. The == computer control system 30 controls a controller 32, which sequentially controls the platform 24 and triggers the laser via a trigger 34 so that the laser beam is directed to the boundary between the embedded device and the control device. An inspection system 25 is connected to the control system and flat mouth, and is set to control the cutting path. The water cooling system is installed, so the whole process is dry. Fig. 2 shows a detailed example of a specific example of a device for cutting a plate of a c device. In this device, the plate 50 in which the IC device 42 is embedded is The transfer system is transferred to a holding station 40. For example, the holding station may be a platform and a guide rail 'or a platform with a vacuum extraction outlet. A laser beam from a laser generator 44 is directed to a scanner or inspection station. In the flow meter 46,
五、發明說明（5) 導向至1C裝置之間的邊界。平板5〇的精確定位係藉由視察 對齊系統4 7所控制。掃描器可經由程式設計，使雷射光束 沿特定切割路徑執行控制深度切割或貫穿切割。控制深度 切割可允許平板被切割直到邊界處的導電層被切斷，但不 兄全切斷整個塑膠模製材料。這允許個別丨c封裝可彼此電 性絕緣’同時實質上維持呈一陣列。然後，電性絕緣的【c 裝置可以部分切開的平板而被送至進行測試。測試完後， 切割過程可被重複，但以較高次數的掃瞄確保丨c封裝的完 全分離。在此具體例中，設置一排氣口 5 2以吸除封裝材料 切除所產生的分解煙霧。亦可選擇性地設置一空氣風箱 (未示）’用以吹除所形成的離子化煙霧D 圖3顯示本發明之第三具體例，其中雷射產生器π位於 旁邊。在此具體例中，設置一光束擴張器58以放大光束點 直徑，而一系列的鏡子60用來將聚焦的光束導向至χ_γ掃 描器或檢流計62上。然後，在視察對齊系統63的引導下， 掃描is將光束導向1C封裝之間的平板邊界上。 雖然本發明已特別參照圖1至3、並以特定範例切割晶片 陣列CSP封裝加以說明，應暸解圖式僅供例示說明/而不 應被視為本發明之限制。此外，很清楚地，本發明之方法 及裝置在許多需要切割模製材料的應用中都具有效用。熟 習此項技術者所做之變化及修改均不背離本發明之精神及 範圍。 [元件編號之說明] 20 雷射5. Description of the invention (5) Guide to the boundary between 1C devices. The precise positioning of the plate 50 is controlled by the inspection alignment system 47. The scanner can be programmed to make the laser beam perform a controlled depth cut or a through cut along a specific cutting path. Controlling deep cutting allows the plate to be cut until the conductive layer at the border is cut, but not the entire plastic molding material. This allows individual c-packages to be electrically isolated from each other 'while substantially maintaining an array. The electrically insulated [c-device can then be partially cut open and sent to a test. After testing, the cutting process can be repeated, but a higher number of scans ensure complete separation of the c package. In this specific example, an exhaust port 5 2 is provided to absorb decomposed fumes generated by cutting off the packaging material. An air bellows (not shown) may be optionally provided to blow off the formed ionized smoke D. Fig. 3 shows a third specific example of the present invention, in which the laser generator π is located beside. In this specific example, a beam expander 58 is provided to enlarge the beam spot diameter, and a series of mirrors 60 are used to direct the focused beam to a χ_γ scanner or galvanometer 62. Then, under the guidance of the inspection alignment system 63, the scan is directed to the plate boundary between the 1C packages. Although the present invention has been described with particular reference to FIGS. 1 to 3 and the wafer array CSP package is cut with specific examples, it should be understood that the drawings are for illustration only and should not be considered as a limitation of the present invention. In addition, it is clear that the method and apparatus of the present invention are useful in many applications requiring cutting of molding materials. Changes and modifications made by those skilled in the art will not depart from the spirit and scope of the present invention. [Explanation of component number] 20 Laser
_2247_ 第 8 頁 五、發明說明（6) 22 平板 24 平台 25 視察系統 26 掃描器 28 光學部件 30 電腦控制系統 32 控制器 34 觸發器 4 0 固持站 42 1C裝置 44 雷射產生器 4 6 檢流計 47 視察對齊系統 50 平板 52 排氣口 56 雷射產生器 58 光束擴張器 60 鏡子 6 2 檢流計 63 視察對齊系統_2247_ Page 8 V. Description of the invention (6) 22 Flat plate 24 Platform 25 Inspection system 26 Scanner 28 Optical component 30 Computer control system 32 Controller 34 Trigger 4 0 Holding station 42 1C device 44 Laser generator 4 6 Current detection Meter 47 Inspection alignment system 50 Plate 52 Exhaust port 56 Laser generator 58 Beam expander 60 Mirror 6 2 Galvanometer 63 Inspection alignment system
89102247.ptd 第9頁 圖式簡單說明 圖1係為本發明之一雷射切割裝置的示意圖。 圖2係為本發明之另一雷射切割裝置的示意圖。 圖3係為顯示本發明之一雷射切割裝置中之雷射光束路 徑的示意圖。89102247.ptd page 9 Brief description of drawings Figure 1 is a schematic diagram of a laser cutting device according to the present invention. FIG. 2 is a schematic diagram of another laser cutting device according to the present invention. Fig. 3 is a schematic view showing a laser beam path in a laser cutting device according to the present invention.
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