TW436900B - Local penetrating proton beam transmutation doping method for silicon - Google Patents

Abstract

Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of protons is described. A key feature of the invention is that the protons are required to have an energy of at least 4 MeV to overcome the Coulomb barrier. When this is done, transmutationally formed phosphorus in concentrations as high as 10<SP>16</SP> atoms per cc. are formed from proton beams having a dosage as low as 10<SP>19</SP> protons per square cm, therefore the required ion doping time is very short. As a byproduct of the process, sulfur is also formed in a practical concentration range of about 10<SP>13</SP> atoms per cc. This is readily removed by annealing at temperatures of the order of 700 DEG C. Because of the high energy of the protons, several silicon wafers may be processed simultaneously. As expected, the additional phosphorus is uniformly deposited throughout the passage of the proton. Masks, either freestanding or contact, may also be used in order to limit the transmuted regions to the particular desired areas.

Description

435900 本案已向 國（地區）申請專利 申請曰期 案號 主張優先權 無 有關微生物已寄存於 寄存曰期 寄存號碼 無 4369 0 Q_ _ 五、發明說明（1) ~ 本發明是有關於一種半導體換雜製程，且特別是有關 於使用質子束以達到該目的。發明背景： 一般而言’在微電子電路之製造中，將雜質摻雜在石夕 晶圓内通常係利用兩種簡易、摻雜深度卻相當淺的雜質、，支 入法中之一種來實行，亦即化學擴散和離子佈植。然而' 有時較深或甚至穿透晶圓之垂直雜質摻雜是需要的。例 如’在製造具有低啟動電阻（on res i stance)並保持高崩 潰（breakdown)電壓之智慧電力電子1C裝置、或高功率金 氧半場效應電晶體（M0SEFT)或者IGBT(絕緣閘極雙载子電 晶體）以及在MEMS(微機電系統）應用上。 一用以達成上述深度之摻雜方法是中子質化掺雜法 (neuron transmutation doping，NTD) °NTD 製程的依據 如下：矽原子之原子數為14 ’然其原子量僅約為28，此是 因為矽並不全是由S i28同位素所構成，其中s丨29同位素之濃 度約為4· 7原子百分比，且Si33同位素之濃度約為&amp; }原子 百分比。當一矽單晶被熱中子轟擊時，S i3〇將會轉變成鱗 P31 (原子量1 5 )。由於想要的最終磷濃度遠低於原先s丨抑的 含量’故控制轟擊天然矽的中子數量便可將所希望濃度的 磷雜質被摻雜於矽内。此磷摻雜物在退火之後將會成為一 額外電子提供者，並均勻地分佈在矽晶格内（假設中子通 量涵蓋整個矽晶）。 雖然，NTD技術已經被成功地應用於數個例子中（參閱 Takasu et al· · us Patent ⑽ 4 91〇，156),然此技術 在半導體製程上則有許多限制與短處，包括：（丨）中子束435900 This case has been filed with a country (region) for a patent application. The date of the application claims priority. No related microorganisms have been deposited in the deposit date. No. 4369 0 Q_ _ V. Description of the invention (1) ~ This invention relates to a semiconductor replacement Hybrid processes, and in particular, the use of proton beams for this purpose. BACKGROUND OF THE INVENTION: Generally speaking, in the manufacture of microelectronic circuits, doping impurities in Shi Xi wafers is usually performed by using one of two simple, but shallow, doping depth impurities. , That is, chemical diffusion and ion implantation. However, sometimes deeper or even penetrating vertical impurity doping is needed. For example, 'In the manufacture of smart power electronic 1C devices with low on resistance and high breakdown voltage, or high power metal-oxide-semiconductor half field effect transistors (M0SEFT) or IGBT (Insulated Gate Bipolar Transistors) and in MEMS (microelectromechanical systems) applications. One doping method used to achieve the above depth is the neutron transmutation doping (NTD) ° The basis of the NTD process is as follows: the number of silicon atoms is 14 ', but its atomic weight is only about 28, which is Because silicon is not all composed of Si 28 isotopes, the concentration of Si 29 isotopes is about 4.7 atomic percent, and the concentration of Si33 isotopes is about &amp;} atomic percent. When a silicon single crystal is bombarded by thermal neutrons, S i30 will be transformed into scale P31 (atomic weight 15). Since the desired final phosphorus concentration is much lower than the original content, so controlling the number of neutrons that bombarded natural silicon can dope the desired concentration of phosphorus impurities into the silicon. This phosphorus dopant becomes an additional electron provider after annealing and is evenly distributed in the silicon lattice (assuming that the neutron flux covers the entire silicon crystal). Although NTD technology has been successfully applied to several examples (see Takasu et al · · US Patent ⑽ 4 91〇, 156), this technology has many limitations and disadvantages in semiconductor manufacturing processes, including: (丨) Neutron beam

436300 五、發明說明（2) ' - 不易聚集成一濃縮束，（ii)此中子束會造成四周的儀 輻射性，且（1 i i )中子束在實際上能取得之最高通量約D為' l〇14/cm2 .sec，相對的—趣離子束可具有約1〇ls〜 l〇]7/cm2 之通量。例如’以下將詳細的描述利用f離 子來作質化摻雜’可造成與謂相同的最後目標（亦即深 度’甚至晶圓穿it，垂直和均勾的n_型捧雜），但卻沒有 如上所述NTD之缺點。我們將此製程命名為&quot;離子質化換 (ITD)”。 … 在施行導致本發明之研究工作前，有關質子在矽晶上 誘導ITD的可能性並未受到太大的注意。尤其，相關的機 制和核反應截面以及側反應的詳細資訊均嚴重缺乏而無法 被實際使用。我們也無法在習知技藝中找到關於質子之質 化摻雜的有用資訊。在一些較令人感興趣的參考文獻中， 其教導了使用習知的摻雜法以及質子轟擊來造成晶格損 害’進而獲得高電阻抗（high resistivity)區域。該些例 子包括 Anthony 等人（U.S. Patent N0. 4,539,743 )、 Capasso 等人（U.S. Patent Ν0·4, 597, 165)的文獻。以下 將敘述的是質子引起的ITD側反應會產生些許的硫原子。 使用硫化合物作為主要的載體（majority carrier)元件曾 由 Barron 等人（U.S. Patent NO. 5, 760, 462)所探討，其 建議硫確實能被有益的使用’然而在本發明的情形裡，任 何的副產物硫至少極可能造成與之接觸的含鐵儀器的傷 害。一個去除這副產物硫的方法也被包含成為本發明的一 部份。436300 V. Description of the invention (2) '-It is not easy to gather into a concentrated beam, (ii) This neutron beam will cause radiation around the instrument, and (1 ii) the highest flux that the neutron beam can actually obtain is about D For '1014 / cm2.sec, the opposite-interest ion beam may have a flux of about 10ls ~ 10] 7 / cm2. For example, 'the following will describe in detail the use of f ions for qualitative doping' can cause the same final goal (that is, depth 'or even wafer through it, vertical and uniform n_-type impurities), but it There are no disadvantages of NTD as described above. We have named this process &quot; Ion Mass Conversion (ITD) .... Before the research work leading to the present invention was carried out, the possibility of protons inducing ITD on silicon crystals had not received much attention. In particular, related Detailed information on the mechanism and cross section of nuclear reactions and side reactions are severely lacking for practical use. Nor can we find useful information about protonated doping in conventional techniques. In some of the more interesting references It teaches the use of conventional doping methods and proton bombardment to cause lattice damage to obtain high resistivity regions. Examples include Anthony et al. (US Patent No. 4,539,743), Capasso et al. (US Patent No. 4, 597, 165). The following will describe that the ITD side reaction caused by protons will generate some sulfur atoms. The use of sulfur compounds as the major carrier element has been proposed by Barron et al. ( US Patent No. 5, 760, 462), which suggests that sulfur can indeed be used beneficially. However, in the case of the present invention, any by-products At least very likely to cause harm in contact with iron-containing equipment injury. A pair product sulfur removal process is also included into a part of the invention.

436900 —---- 五、發明說明（3) 發明概要： 本發明之-特徵是可在控制狀況了， 子提供者（donors)的濃度。 夕日日宁的包 本發明之另一特徵是可拉 位素質化成磷的數量。 9 $擊，增加上述矽同 本發明之另-特徵是該項製程技術可以經濟有效地， 且可與目前用以製造矽積體電路之現有技術相結合。 這些特徵均可藉由質子束森擊石夕晶圓而達成。本發明 之一關鍵特徵是質子的能量需至少為仙“，以克服矽晶令 之庫偷障礙。當完成本發明之步驟，將有高達 l〇16at〇niS/CC的質化磷被一僅約為1〇ls質子/cm2的質子劑量 形成’由於質子束之通量可以非常高’因此所需要的時間 將遠比使用NTD製程短暫。作為一反應副產物，硫也被形 成而有濃度約為1013atoms/cc之譜，不過其可在8〇〇 °C的退火處理下被輕易地去除。因為質子的高能量，故可 同時處理數片晶圓。其將使得這些額外摻雜的鱗雜質均勾 地落於整個晶圓厚度。另外’不管是非接觸式或接觸式罩 幕’均可被用來選定此ITD質化摻雜區域。 &gt; 圖式之簡單說明： 第1圖顯示的是一迴旋加速器示意圖’其顯示—由其 射出的質子束穿透一疊晶圓° ' 第2圖顯示的是磷濃度對質子束f luence的函數圖。436900 —---- V. Description of the invention (3) Summary of the invention: The feature of the present invention is that the conditions can be controlled, the concentration of sub-donors. Xi Rining's package Another feature of the present invention is the amount of pullable qualitative phosphorus. Adding the above silicon is another feature of the present invention. The process technology can be cost-effective and can be combined with the existing technology currently used to manufacture silicon integrated circuits. These characteristics can be achieved by the proton beam hitting the stone eve wafer. One of the key features of the present invention is that the energy of the protons needs to be at least centimeters "in order to overcome the silo stealing barrier caused by the silicon crystals. When the steps of the present invention are completed, up to 1016atOniS / CC of the quality phosphorous is eliminated by A proton dose of about 10 ls protons / cm2 forms 'because the flux of the proton beam can be very high', so the time required will be much shorter than using the NTD process. As a reaction by-product, sulfur is also formed with a concentration of about It has a spectrum of 1013 atoms / cc, but it can be easily removed under an annealing treatment at 800 ° C. Due to the high energy of protons, several wafers can be processed at the same time. It will make these extra doped scale impurities All of them fall on the entire wafer thickness. In addition, 'whether non-contact or contact mask' can be used to select this ITD quality doped region. &Gt; Brief description of the diagram: Figure 1 shows the A schematic diagram of a cyclotron 'its display-the proton beam emitted by it penetrates a stack of wafers' Figure 2 shows a graph of the phosphorus concentration as a function of the proton beam fluence.

第6頁 436900' 五、發明說明（4) 第3圖顯示的是硫濃度對質子束f nee的函數圖。 第4圖顯示的是矽中的磷和硫之固態溶解度對溫度的 函數。 第5圖顯示的是矽中的磷和硫擴散係數對溫度的函數 圊。 第6圖顯示的是當高能量質子轟擊天然矽時所發生的 主要核反應。 較佳實施例的說明： 作者認為質子IT D之所以並未於早期即被廣泛的應用 於羊導體領域的一個可能理由是因為大多數的離子佈植機 的上限僅達於400keV的低轟擊量’故質化的效應便小至可 忽略不計。 然而’假使質子的能望；增加到超過4 M e V ^則將會因為 庫儉障礙被克服而發生新的一組如第6圖所示之核反應。 簡而言之就是所謂的（P, 7)反應，其中因為氫離子的撞擊 而產生轉變，並且放出射線。反應式^顯示的是8丨28轉 變成Ρ29，後者在半衰期約4秒之情形下後衰變為Si2g。不過 過程I，有些暫時存在的…也會在質子轟擊下被轉變 其在半衰期約1秒的情況下，又衰變成ρ3〇，接著 再於5农期約2.5分衰變成Si3Q(不具輻射性的穩定核）。 °，然顯示在質子轟擊下’si&quot;被轉變成p ’ 哀’月2· 5分鐘衰變為Si3。。在質子轟擊下， 任何還未农變為Si\p30將會轉變為spi，然後衰變為穩Page 6 436900 'V. Description of the invention (4) Figure 3 shows the sulfur concentration as a function of the proton beam f nee. Figure 4 shows the solid solubility of phosphorus and sulfur in silicon as a function of temperature. Figure 5 shows the phosphorus and sulfur diffusion coefficients in silicon as a function of temperature. Figure 6 shows the main nuclear reactions that occur when high-energy protons bombard natural silicon. Explanation of preferred embodiments: The author believes that one possible reason why the proton IT D was not widely used in the field of sheep conductors early is because the upper limit of most ion implanters is only a low bombardment amount of 400keV. 'The qualitative effect is so small that it is negligible. However, if the proton potential is increased; an increase to more than 4 M e V ^ will cause a new set of nuclear reactions as shown in Figure 6 because the thrifty obstacle is overcome. In short, it is the so-called (P, 7) reaction, in which a transformation occurs due to the impact of hydrogen ions, and radiation is emitted. The reaction formula ^ shows that the transition from 8 to 28 becomes P29, and the latter decays to Si2g with a half-life of about 4 seconds. However, in process I, some temporarily existed ... will also be transformed under proton bombardment. In the case of a half-life of about 1 second, it decays to ρ30, and then decays into Si3Q (non-radiative) at about 2.5 minutes in the 5th agricultural period. Stable nuclear). °, then it shows that under the bombardment of protons, "si" is transformed into p ", and it decays into Si3 in 2.5 minutes. . Under proton bombardment, any undeveloped Si \ p30 will be converted to spi, and then decay to stable

436900 五、發明說明（5) ~—--- 定的—t不具輻射性的穩定椋）。此反應可提供一些p(磷） 摻雜雜質，但是其數量也會因為P3D未被質子撞擊而衰變， 而有減少的可能性。 &quot; 透過質子轟擊而產生的主要N_型摻雜源可歸結於第6 圖=方程式3，在此反應中，Si3。是直接被轉變成非^性 的产;然而’-些P31也可透過質子轟擊而被轉變成非輻射 性的S 。因此，於各種因素中，首要取決於Si3〇和ρι對於 質子的相對質子捕捉戴面，一平衡狀態將可達到。於其 中’在=給定的質子轟擊劑量下，pm的產生量可以被決定 施行本實驗前，能引起由質子誘導的iTD反應之最小 旎量係由推算的一個質子和一個矽原子核做接觸所需要施 加的功而得出約為4MeV，此亦經後來的實驗證實。 為了產生一超過此最小能量的可靠質子束，一傳統的 迴旋加速器被發現可有效和經濟地達到目的。如第1圖所 示，加速器1射出質子束2，該質子束具有的能量約為5〜 30MeV ’且較佳地是約〗〇〜1 5MeV。來自加速器的一般電流 大小約為ΙΟιηΑ〜1mA ’相當於一具有ι〇ΐ4〜1〇16質子/cnj2的 質子束，且典型的施加劑量約為10”〜1〇ls質子/cm2。 在此能量範圍下’質子束的穿透深度約為3〇//m〜 5min。這使得同時以質子束轟擊數片矽晶圓成為可能。一 疊此類晶圓乃顯示於第1圖之標號3。 由於一般的質子束寬度約為2 c m，因此必須透過晶圓 的移動使得質子束可掃過整個晶圓表面。 在使用具上能量與通量的質子作照射約5〜1 〇 〇分鐘436900 V. Description of the invention (5) ~ ----fixed-t does not have radiation stability (椋). This reaction can provide some p (phosphorus) doped impurities, but its amount will also be reduced because P3D is not decayed by the proton impact. &quot; The main N-type doping source produced by proton bombardment can be attributed to Figure 6 = Equation 3, in this reaction, Si3. Are directly converted into non-linear properties; however, some P31 can also be converted into non-radiative S by proton bombardment. Therefore, among various factors, the first depends on the relative proton-capturing surface of Si3O and ρ for protons, and an equilibrium state can be achieved. In which 'at a given dose of proton bombardment, the amount of pm produced can be determined. Before performing this experiment, the minimum amount of iTD that can cause a proton-induced iTD reaction is calculated by contacting a proton with a silicon nucleus. The work required requires approximately 4 MeV, which was also confirmed by subsequent experiments. In order to produce a reliable proton beam exceeding this minimum energy, a conventional cyclotron was found to be effective and economical. As shown in Fig. 1, the accelerator 1 emits a proton beam 2, which has an energy of about 5 to 30 MeV 'and preferably about 0 to 15 MeV. The magnitude of the general current from the accelerator is about 10 μηα ～ 1mA ', which is equivalent to a proton beam with ι〇ΐ4 ～ 1016 protons / cnj2, and the typical applied dose is about 10 ”~ 10 ls protons / cm2. Here the energy In the range, the penetration depth of the proton beam is about 30 // m ~ 5min. This makes it possible to bombard several silicon wafers with a proton beam at the same time. A stack of such wafers is shown at 3 in Figure 1. Since the general proton beam width is about 2 cm, it must be moved through the wafer so that the proton beam can be swept across the entire wafer surface. The protons with energy and flux are used for irradiation for about 5 to 1000 minutes.

436900 五、發明說明（6) 後，由檢查晶圓的電阻和变別可以確定由此所增加的電子 提供者（electron donor)數目。第2圖顯示的是P31原子之 濃度相對於以具3 0 M e V能量的質子束所作之總照射劑量的 函數關係圖形。如圖所示，磷的濃度是與質子束劑量成線 性。 在此可發現，施以一定量的質子使矽轉變成磷的量比 施以中子所轉變量來約大了 1 0倍，這是個很大的差別，也 是在此類應用中，質子遠比中子佔優勢的原因之一。此 外，我們也發現不像中子束，高通量的質子束是實際上較 容易達到的，而且質子束還可以磁場或電場的方式作引導 操控。 如上所述，一種質子束轟擊矽的副產物是一定量的 S32 ’故我們推測經過許多核反應而轉變形成的硫之濃度 乃為質子束照射劑量的函數，此結果乃顯示第3圖，其中 可發現即使在實用上之最高劑量下’硫原子的濃度並不會 超過 1.8x l〇13atoms/CC。 幸運地，硫原子在矽中的溶解度是低的，特別是當與 構原子比較時。如第4圖所示，靖的最大溶解度（西線41) 在約1000 °C乃些微超過l〇21atoms/cc ’而在約1300。〇時， 硫濃度僅達到約3xl016atoms/cc的最高值（曲線42)。此 外’硫在矽中具有最高的擴散係數’再次同樣的特別是當 與磷原子比較時，此結果可參閱第5圖。硫在矽中的擴散 係數在1000 °C時約為10-8cm2/ sec(曲線52)，而碟在石夕中的 擴散係數在1〇〇〇。〇僅約為l〇14cin2/sec(曲線51)=436900 V. Description of the invention (6) After checking the resistance and variation of the wafer, the increased number of electron donors can be determined. Figure 2 shows a graph of the concentration of the P31 atom as a function of the total irradiation dose with a proton beam with an energy of 30 M e V. As shown, the phosphorus concentration is linear with the proton beam dose. It can be found here that the amount of silicon converted to phosphorus by applying a certain amount of protons is about 10 times larger than the variable transferred by neutrons. This is a big difference. It is also in this kind of application that protons are far away. One of the reasons why neutrons are dominant. In addition, we also find that unlike neutron beams, high-flux proton beams are actually easier to reach, and proton beams can also be guided and manipulated by means of magnetic or electric fields. As mentioned above, a by-product of a proton beam bombarding silicon is a certain amount of S32 '. So we speculate that the concentration of sulfur formed through many nuclear reactions is a function of the proton beam irradiation dose. This result is shown in Figure 3, where It was found that even at the highest practical dose, the concentration of sulfur atoms does not exceed 1.8 × 10 13 atoms / CC. Fortunately, the solubility of sulfur atoms in silicon is low, especially when compared to conformational atoms. As shown in Figure 4, Jing's maximum solubility (western line 41) was slightly above 1021 atoms / cc 'at about 1000 ° C and about 1300. At 0, the sulfur concentration reached only the highest value of about 3 × 1016 atoms / cc (curve 42). In addition, 'sulfur has the highest diffusion coefficient in silicon' again, especially when compared with phosphorus atoms. This result can be seen in Figure 5. The diffusion coefficient of sulfur in silicon is about 10-8 cm2 / sec (curve 52) at 1000 ° C, and the diffusion coefficient of the dish in Shixi is 1,000. 〇 Only about 1014cin2 / sec (curve 51) =

^3β9〇〇 五 '發明說明（7) ~ ' --- 因為上述磷和硫於矽中之此二物理性質差異，由質子 義擊所產生之負產物硫之去除便很容易完成。在去除疏 前’必須要先清洗晶圓的表面，其目的乃在排除晶圓表面 之污染物’使其免於在其後之退火過程中溢出。清洗步驟 可利用下列步驟完成： 首先’晶圓乃先以去離子水（deionized water)、;中洗9 〜5分鐘，然後再浸泡在溫度75〜8 0 °c且含氨水和雙氧水 之混合溶液内’為時1 〇〜1 5分鐘。其次’利用稀釋的氫氣 酸蝕刻1 0〜1 5秒’然後再次浸泡在溫度7 5〜8 0 °c且含氨水 和雙氧水之混合溶液内，為時1 0〜1 5分鐘。最後，再以去 離子水沖洗2〜5分鐘，然後在溫度20〜3 (TC的氮氣環境中 乾燥5〜1 0分鐘。 一但晶圓已經清洗過’硫將可在溫度7 〇 〇〜9 0 〇 °c的真 空環境下以退火30〜60分鐘被去除。此外，儘管不是絕對 必要’硫的去除效率可因在真空中添加鐵或鐵合金等硫之 吸取劑而有效地被提昇。該些硫吸取劑可被作為網狀包住 矽晶圓=做完硫之去除步驟後’殘留硫之濃度據推測乃低 於1 012atoms/cc相對地，硫的濃度則保留在退火前的丨〇ie atoms/cc 。 當開始進行如上所述之製程後，石夕的導電性質將可以 不同的方式作改變： 從P型轉變成P-型； 從P型轉變成N型； 從N型轉變成N+型；以及^ 3β9〇〇 5 Description of the invention (7) ~ '--- Because of the difference between the above two physical properties of phosphorus and sulfur in silicon, the removal of the negative product sulfur produced by proton attack can be easily completed. The surface of the wafer must be cleaned before the thinning is removed, the purpose of which is to remove contaminants from the surface of the wafer 'so that it will not overflow during subsequent annealing. The cleaning step can be completed using the following steps: First, the wafer is first deionized water, and then washed for 9 to 5 minutes, and then immersed in a mixed solution containing ammonia and hydrogen peroxide at a temperature of 75 to 80 ° C. Within 'last 10 to 15 minutes. Next, ‘etch with a diluted hydrogen acid for 10 to 15 seconds’ and then immerse it again in a mixed solution containing ammonia and hydrogen peroxide at a temperature of 75 to 80 ° C for 10 to 15 minutes. Finally, rinse with deionized water for 2 ~ 5 minutes, and then dry in a nitrogen environment at a temperature of 20 ~ 3 (TC for 5 ~ 10 minutes. Once the wafer has been cleaned, the sulfur will be available at a temperature of 〇OO ～ 9 It is removed by annealing for 30 to 60 minutes under a vacuum environment of 0 ° C. In addition, although it is not absolutely necessary, the efficiency of sulfur removal can be effectively improved by adding a sulfur absorbent such as iron or iron alloy in a vacuum. These The sulfur absorbent can be used as a net to enclose the silicon wafer = After the sulfur removal step is completed, the concentration of residual sulfur is presumed to be lower than 1 012 atoms / cc. In contrast, the sulfur concentration remains at the level before annealing. atoms / cc After starting the process described above, Shi Xi's conductive properties can be changed in different ways: from P-type to P-type; from P-type to N-type; from N-type to N + Type; and

第10頁 ^36900Page 10 ^ 36900

五、發明說明（8) 從P型轉變成N+型。 為了充分利用這項新能力來控制穿過整個晶圓厚度之 電子提供者（electron donors)之濃度’質子束的區域選 擇性轟擊係以罩幕來達成。此罩幕有兩種形式，其中之'_ 是由鋁、銅、金或鎳-鐵合金材料構成之獨立近接式罩幕 (proximity masks) ’其係由厚度〇 5〜2_之金屬箱所形 成’一般置於距離晶圓表面50〜1000 處。 第一種形式的罩幕則是由銘、銅、金或鎳-鐵合金材 料構成之接觸式罩幕（contact masks)，此罩幕的厚声約 為2〜10/zm ’允許線寬之解析度在〇_5〜2.0#m間（對&amp;於在 矽中的摻雜深度為10〜20弘m之間）。 、 我們注意到近接式罩幕令同時處理數片晶圓成為可 能。其係先將數個罩幕對準，而後再於其間***晶圓，使 不失其對準性。 阳’ 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，所作之各種更動與潤飾均落在本發明之範圍 内，因此本發明之專利保護範圍當視後附之申請專利範圍 所界定者為準。V. Description of the invention (8) Transition from P-type to N + -type. In order to take full advantage of this new ability to control the concentration of electron donors across the thickness of the wafer's area of proton beams, selective bombardment is achieved with a mask. There are two forms of this mask. Among them, '_ is an independent proximity masks made of aluminum, copper, gold or nickel-iron alloy material.' It is formed by a metal box with a thickness of 5 ~ 2_. 'Generally placed 50 ~ 1000 away from the wafer surface. The first type of mask is contact masks made of Ming, copper, gold or nickel-iron alloy materials. The thick sound of this mask is about 2 ~ 10 / zm. The degree is between 0_5 ~ 2.0 # m (the doping depth in silicon is between 10 ~ 20nm). We noticed that the proximity mask made it possible to process several wafers at the same time. It first aligns several masks, and then inserts a wafer between them, so as not to lose its alignment. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make all modifications and retouchings without departing from the spirit and scope of the present invention. Within the scope of the invention, the patent protection scope of the present invention shall be determined by the scope of the attached patent application scope.

第11頁Page 11

Claims (1)

| 4369 〇0 坡. 六、申請專利翻 —二:二— 1· 一種摻雜具第一導電型的矽之製程，其步驟包括： 將具有一個能量和一個劑量之質子束導入矽晶内，將 矽轉變成一具第二種導電型； 清洗該碎；以及 曰由ίίί下使矽進行退火’以之使由S3°轉變成的磷在矽 曰日中具-电性，並且將轉變的硫去除。 2-如申諳專利範圍第1項所述之製程s 能量約為5〜30MeV = '、中違貝丁的 3.如申請專利範圍1項所述之製程，立由 劑量刳俨〜^〜广“⑽以^。 …^子束之 火牛請專利㈣第1項戶斤述之製程1中該石夕的退 ^二驟更包括在溫度700〜90 0的條件下加熱約3〇〜6〇分 、5 *如申請專利範圍第！項所述之製程 之濃度介於1(p〜i(p/cc。 導 1如申請專利範圍第1項所述之製程 7型為P型，而第二種導電犁為P -型。 導雷别如申請專利範圍第1項所述之製程 /為P型，而第二種導電梨為N型。 壤雷刑如申請專利範圍第1項所述之製裎 -“二為Ν1ί，而第二種導電塑為Μ型。 其中該轉變磷 其中該第一種 其中該第一種 其中該第一種 暮電刑如申請專利範圍第1項所述之製裎s其中該第 “ &lt;為？型，而笛-德蔞雷琐為N+型。 種 =為？型，而第二種導電塑 ^ 如由請專利範圍第1項所述之製程4369 〇0 Slope. 6. Applying for a patent translation—two: two—1. A process for doping silicon with a first conductivity type includes the steps of: introducing a proton beam with an energy and a dose into the silicon crystal, Convert silicon to a second conductivity type; clean the chip; and anneal the silicon by 'lower' so that the phosphorus converted from S3 ° is -electrical in silicon and will transform the sulfur Remove. 2- The process s described in item 1 of the scope of the patent application has an energy of about 5 ~ 30 MeV = ', and the violent bedding. 3. The process described in the first scope of the patent application, the dose is 刳 俨 ~ ^ ~ Cantonese ^. ^ ^ Zishu's fire ox please patent ㈣ The first step of the process described in the first household of the process described in the first step of the retreat of the stone ^ ^ two steps include heating at a temperature of 700 ~ 900 0 conditions about 30 ~ ~ 60 points, 5 * The concentration of the process described in item 1 of the scope of patent application is between 1 (p ~ i (p / cc). Guide 1 The process 7 described in item 1 of the scope of patent application is type P, The second type of conductive plough is P-type. The process of conducting lightning is as described in item 1 of the scope of patent application / type P, and the second type of conductive plough is N-type. The said system-"the second is N1ί, and the second conductive plastic is M type. Wherein the converted phosphorus of which the first type of which the first type of which the first type of electric power penalty as described in the scope of patent application No. 1 The system described in the above is where the "&lt; is a? Type, and the flute-de 蒌 Leizuo is an N + type. The species = is the? Type, and the second conductive plastic is as described in item 1 of the patentable scope Process -~428〇.τ£ρ 第12買 其中該矽之最 ο Ο 六、申請專利範圍 大厚度介於30 /zm〜5mm。-~ 428〇.τ £ ρ The 12th purchase Among which the most of the silicon ο 〇 6, patent application scope Large thickness between 30 / zm ~ 5mm. 11.如申請專利範圍第1項所述之製程，其中該轉變硫 之去除更包括在真空内，置放一種選自鐵或鐵合金構成之 族雜的疏吸收劑。 1 2. —種將磷摻雜於一具表面之矽積體電路上之選擇 區域之製程，其步驟包括： 提供一具能量的質子源； 透過一軍幕，將該質子束導向一尚夫製作電子元件之 積體電路表面，為時一段時間； 清洗該尚未製作電子元件之積體電路表面；以及 在真空下使該尚未製作電子元件之積體電路進行退 火，進而將轉變的硫去除。11. The process according to item 1 of the scope of patent application, wherein the removal of the converted sulfur further includes placing a heterogeneous absorbing agent selected from the group consisting of iron or iron alloy in a vacuum. 1 2. —A process for doping phosphorous into a selected area on a silicon integrated circuit with a surface, the steps include: providing a source of protons with energy; directing the beam of protons through a military curtain to a Shangfu production electron The surface of the integrated circuit of the component is for a period of time; cleaning the surface of the integrated circuit of the yet-to-be-produced electronic component; and annealing the integrated circuit of the yet-to-be-produced electronic component under vacuum to remove the converted sulfur. 1 3.如申請專利範圍第1 2項所述之製程，其中質子束 導入該尚未製作電子元件之積體電路之時間约為5〜100分 鐘c i 4.如申請專利範圍第丨2項所述之製程，其士該質子 之能量約為5〜3 0 M e V &quot; 1 5.如申請專利範圍第1 2項所述之製程，其中該質子 束之劑量約為1〇17〜l〇19protons/cm2。 1 6 .如申請專利範圍第1 2項所述之製程，其中該清理 積體電路表面之步驟更包括： 以去離子水沖洗2〜5分鐘； 浸潰於溫度75〜80 °C之氨水和雙氧水構成之混合溶液 中為時10〜15分鐘；1 3. The process described in item 12 of the scope of patent application, wherein the time for the proton beam to be introduced into the integrated circuit of the electronic component that has not yet been produced is about 5 to 100 minutes ci 4. As described in item 2 of the scope of patent application In the manufacturing process, the energy of the proton is about 5 ~ 3 0 M e V &quot; 1 5. The manufacturing process as described in item 12 of the scope of patent application, wherein the dose of the proton beam is about 1017 ~ 10. 19protons / cm2. 16. The process according to item 12 of the scope of patent application, wherein the step of cleaning the surface of the integrated circuit further comprises: rinsing with deionized water for 2 to 5 minutes; immersing in ammonia water at a temperature of 75 to 80 ° C and 10 ~ 15 minutes in a mixed solution of hydrogen peroxide; 0412-4280-EFl.ptd 第13頁 43S900 六、申請專利範圍 以稀氫氟酸蝕刻1 〇〜1 5秒； 再次浸潰於溫度75〜80 °c之氨水和雙氧水構成之混合 溶液中為時10〜15分鐘； 再次以去離子水沖洗2〜5分鐘；以及 在溫度2 0〜3 0 t的氮氣環境中乾燥約5〜1 0分鐘。 17.如申請專利範圍第12項所述之製程，其中該尚未 元成之積體電路的退火步驟更包括在溫度7〇0〜90〇〇c的條 件下加熱約30〜60分鐘。 18.如申請專利範圍第12項所述之製程，其中該經退 、活化之電子提供者離子濃度介於1〇15〜l〇16/cc。 β 一19、如申請專利範圍第12項所述之製程，其中該罩幕 接觸式罩幕’其材料是選自銘、鋼、金和鎳-鐵合 攝成之族群。 •如申請專利範圍第12項所述之製程，其中該罩幕 =可獨立分開的近接式罩幕，其材料是選自鋁、銅、 〜、〜鐵合金所構成之族群。 是~. 金和0412-4280-EFl.ptd Page 13 43S900 6. The scope of the patent application is to etch with dilute hydrofluoric acid for 10 to 15 seconds; immerse it again in a mixed solution of ammonia and hydrogen peroxide at a temperature of 75 to 80 ° C for the time being 10 to 15 minutes; rinse again with deionized water for 2 to 5 minutes; and dry in a nitrogen environment at a temperature of 20 to 30 t for about 5 to 10 minutes. 17. The process according to item 12 of the scope of the patent application, wherein the annealing step of the integrated circuit that has not yet been formed further comprises heating at a temperature of 700 to 90 ° c for about 30 to 60 minutes. 18. The process according to item 12 of the scope of patent application, wherein the deactivated and activated electron donor ion concentration is between 1015 and 1016 / cc. β-19. The process as described in item 12 of the scope of patent application, wherein the material of the contact screen ’is selected from the group consisting of Ming, steel, gold, and nickel-iron. • The process according to item 12 of the scope of the patent application, wherein the screen = an independently detachable proximity screen, the material of which is selected from the group consisting of aluminum, copper, ~, ~ iron alloy. Yes ~. Jinhe