TW432403B - Chip-type high-precision low-resistance device and its fabricating method - Google Patents

Abstract

This invention is about chip-type high-precision low-resistance device and its fabricating method. After the roll of alloy metal wire material with extremely low temperature coefficient of resistance is rolled to form thin plate shape or the roll of alloy metal plate material with extremely low temperature coefficient of resistance is directly used, the pressing process is used to form the outlook of device. Then, the insulating coating is fabricated to cover the electrode so as to form the device.

Description

-3_ 五、發明說明（1) 《發明之範圍》 本發明是有關一種晶片型高精度低阻元件及其製作方 法，尤其是有關一種具有極低電阻溫度係數之晶片型高精 度低阻元件及其製作方法者。 《發明之背景》 為了因應個人電腦中所使用的中央處理器（CPU)快速 發展，及中央處理器的種種需求，如更快的運算速度、較 低的工作電壓、更高的工作電流、及更高的電源品質；提 供給CPU的電源已由與其他電源共用一個電源供應器的整 合模式中*分離出一個個別的模組，而此一模組中控制電 源轉換的工作頻率則亦越來越高，所以為了穩定度的考 量，電源轉換的控制方式已漸漸由電壓控制模式轉換為電 流控制模式。 上述的轉變不僅是在個人電腦上，事實上在整個電子 工業的電源控制需求上，電流控制模式已逐漸成為主流。 既然是電流控制模式，那麼電流感測元件必然不可或缺， 而低阻元件則是電流感測元件中被使用得最廣泛的一種。 而為了控制上的精度，所使用的低阻電流感測元件的 阻值誤差必須越小越好，亦即精度愈高，同時當有大電流 流經低阻電流感測元件時會產生高熱，所以低阻元件須考 慮功率散熱問題，而且低阻元件的溫度係數必須越低越 好，以降低因溫升而造成的阻值偏差，維持感測精度。 基於上述目的及需求，本發明人乃以機械衝壓製程加 工方式及相關電性調整製程，發明出本發明之晶片型高精-3_ V. Description of the Invention (1) "Scope of Invention" The present invention relates to a wafer-type high-precision low-resistance element and a manufacturing method thereof, particularly to a wafer-type high-precision low-resistance element having an extremely low temperature coefficient of resistance and Its production method. "Background of the Invention" In order to respond to the rapid development of the central processing unit (CPU) used in personal computers and various requirements of the central processing unit, such as faster computing speed, lower operating voltage, higher operating current, and Higher power quality; the power provided to the CPU has been separated from an individual module in the integration mode of sharing a power supply with other power sources *, and the operating frequency of this module to control power conversion is also increasing The higher, so for the sake of stability considerations, the control mode of power conversion has gradually changed from voltage control mode to current control mode. The above-mentioned change is not only on personal computers, but in fact, the power control needs of the entire electronics industry, the current control mode has gradually become mainstream. Since it is a current control mode, a current sensing element is indispensable, and a low resistance element is one of the most widely used current sensing elements. In order to control the accuracy, the resistance error of the low-resistance current sensing element used must be as small as possible, that is, the higher the accuracy, and high heat will be generated when a large current flows through the low-resistance current sensing element. Therefore, the low-resistance component must consider the power dissipation problem, and the temperature coefficient of the low-resistance component must be as low as possible to reduce the resistance deviation caused by temperature rise and maintain the sensing accuracy. Based on the above objectives and requirements, the inventor has invented the wafer-type high-precision of the present invention by a mechanical stamping process and a related electrical adjustment process.

第4頁 _! P4 32 4 Ο 3 五、發明說明（2) ,度低阻元件及可一貫化之製作方法 阻溫度係數、良好散熱功能的—^ ，以符合高精度、低電 量生產。 而求’同時可以用低成本大 <習知技藝之說明> 目月_ί已十分廣泛地應用在各種 。 測元件有如下數種： 電’原產。。之低阻電流感 1. 如第1Α圖、第1Β圖與第lc 上的鋼箔1 0 1作特殊佈線，得&丨你 不’直接將機板1 〇 〇 是成本極低；但是阻值誤差大\低最阻„元件特性者β其優點 數幾乎即為銅的電阻溫度俜&，：嚴重的是其電阻溫度係 2. 如課 '第:高達數千一。。。 者’使用的接合方式為合金金屬嗥採用合·金金屬線 接，優點是成本適中且電阻插於機板聊而鲜 π 扫《 ΐίΐ扞#俨垃沾拉人度係數可降至50ppM/°C以 L ΐ:ί狀況控制不易，-般而言阻值 用可變電阻加以調整。威格的％纟，控制線路需另外 3. 如第3謂與第胸所示，採用薄膜製程的晶月型低 阻電流感測7L件，其係於機板3 0 〇，依次被覆導體層3 〇 i， 3 0 2， 3 0 3 ’ 3 0 4而彳于者，其優點是其阻值誤差藉由雷射修 整可控制到1 %以内，修整後的電阻膜保護層採用高導熱材 料，所以晶片尺寸較小；但因晶片結構特性問題，電阻溫 度係數僅可達到2 5 0ppM/°C左右，同時價格成本高。 4.如第4A圖、第4B圖與第4C圖所示’採用厚膜製程的 晶片型低阻電流感測元件’其亦係於機板4 0 0上依次被覆Page 4 _! P4 32 4 Ο 3 V. Explanation of the invention (2), low-resistance components and consistent manufacturing methods-Temperature coefficient of resistance, good heat dissipation function-^, in order to meet high-precision, low-power production. And seeking 'at the same time can be used at low cost < Explanation of the know-how > Muyue_ί has been widely used in various. There are several types of measuring elements: Electricity 'origin. . Low-resistance current sense 1. As shown in Figure 1A, Figure 1B, and the steel foil 1 0 1 on the lc for special wiring, you will get & 丨 You don't directly connect the machine board 1 00 is very low cost; but the resistance The value error is large \ lowest resistance. The characteristics of the element β is almost the resistance temperature of copper 俜 &, the serious thing is that its resistance temperature is 2. For example, the first chapter: up to several thousand ... The bonding method used is alloy metal, using a gold metal wire connection, the advantage is that the cost is moderate, and the resistance is inserted in the board to chat and fresh π Scan "ΐίΐ 俨 # 俨 ラ 拉 The pull factor can be reduced to 50ppM / ° C to L ΐ: It is not easy to control the condition.-Generally, the resistance value is adjusted by a variable resistor. Wieg's% 纟, the control circuit needs another 3. As shown in the third and third figures, the crystal moon type using a thin film process 7L low-resistance current sensing, which is connected to the machine board 300, and is sequentially covered with the conductor layer 300i, 3002, 3 0 3 '3 0 4 and has the advantage that its resistance error is caused by Laser trimming can be controlled to within 1%. The trimmed resistive film protective layer uses high thermal conductivity material, so the wafer size is small; The problem is that the temperature coefficient of resistance can only reach about 250ppM / ° C, and the price and cost are high. 4.As shown in Figure 4A, Figure 4B, and Figure 4C, wafer-type low-resistance current sensing using a thick film process Element 'which is also covered in turn on the board 4 0 0

τ »4 324 0 3 五、發明說明（3) 電阻材料4 0 1，保護層4 0 2，導體層4 0 3者，其阻值可藉雷 射修整控制在1%以下：電阻溫度係數可達到1 OOppM/ °C以 下；但保護層材料導熱較差，所以晶片尺寸較大，使用成 本極向。 《發明之目的》 有鑑於習見低阻電流感測技藝之上述缺點，本發明即 旨在提供一種高精度、低電阻溫度係數及良好散熱結構之 晶片型高精度低阻元件及其製作方法，其乃為一種低使用 成本之低阻電流感測元件，如此，可以利用低成本量產並 將元件使用於性能需求較高的設施，提高設備的精度。 至於本發明之詳細製作過程，其他目的與功效，則參 照下列依附圖所作之說明，即可得到完全的了解，附圖 者： 《圖示之簡單說明》 第1圖為習見機板銅，箔佈線之低阻元件示意圖，其中 第1'4圖為平面圖，第1B圖為橫截面圖，第1C圖為縱截面 圖； 第2圖為習見合金金屬線之低阻元件及其使用方式示 意圖，其中第2A圖為平面圖，第2B圖為橫載面圖，第2C圖 為縱截面圖； 第3圖為習見薄膜式晶片型低阻元件之示意圖，其中 第3A圖為平面圖，第3B圖為橫戴面圖，第3C圖為縱戴面 圖； 第4圖為習見厚膜式晶片型低阻元件之示意圊，其中τ »4 324 0 3 V. Description of the invention (3) Resistive material 401, protective layer 402, and conductive layer 403. The resistance value can be controlled by laser trimming below 1%: the temperature coefficient of resistance can be It is below 1 OOppM / ° C; however, the material of the protective layer has poor thermal conductivity, so the size of the wafer is large, and the use cost is extremely high. "Object of the Invention" In view of the above-mentioned shortcomings of the conventional low-resistance current sensing technology, the present invention aims to provide a wafer-type high-precision low-resistance component with high accuracy, low resistance temperature coefficient and good heat dissipation structure, and a manufacturing method thereof. It is a low-resistance current sensing element with low use cost. In this way, it can use low-cost mass production and use the element in facilities with higher performance requirements to improve the accuracy of the device. As for the detailed production process of the present invention, and other purposes and effects, you can get a complete understanding with reference to the following description made with reference to the drawings. Schematic diagram of low-resistance components for wiring. Figure 1'4 is a plan view, Figure 1B is a cross-sectional view, and Figure 1C is a longitudinal sectional view. Figure 2 is a schematic diagram of low-resistance components and their use methods of conventional alloy metal wires. Among them, FIG. 2A is a plan view, FIG. 2B is a cross-sectional view, and FIG. 2C is a longitudinal sectional view. FIG. 3 is a schematic diagram of a conventional thin film wafer type low-resistance element, in which FIG. 3A is a plan view and FIG. 3B is a plan view. A cross-sectional view, FIG. 3C is a vertical cross-sectional view; FIG. 4 is a schematic diagram of a conventional thick-film wafer type low-resistance device, where

r rd32^3-：— 五、發明說明（4) 第4A圖為平面圖，第4B圖為橫戴面圖，第4C圖為縱載面 圖； 第5圖為薄膜式晶片型低阻元件TCR計算尺寸說明圖 第6圖為本發明之晶片型高精度低阻元件圖，其中第 6A圖為平面圖，第6B圖為橫裁面圖，第6C圖為縱裁面圖 第7 A〜7J圖為本發明製作方法之製程圖； 《圖示中元件名稱與符號對照》 基板 101 120 140 銅箔 保護層 阻值修整區 2 :電阻層 2 0 1 :合金金屬線 3 :導體層 301, 302, 303, 4 :保護層 1 00 :機板 1 1 1、1 1 2 :絕緣覆蓋 131 ' 132 ：電極結構 1 5 0 :絕緣被覆 2 0 0 :機板 3 0 0 :機板 304 :導體層 400 :機板 401 電 阻 材料 402 保 護 層 403 導 體 層 5 ： 保 護 層 6 ： 介 面 層 7 : 低 TCR合金金屬材料 9 0 :散熱片 【較佳具體實施例之詳細描述r rd32 ^ 3-:-5. Description of the invention (4) Figure 4A is a plan view, Figure 4B is a cross-sectional view, Figure 4C is a longitudinal load view, and Figure 5 is a thin-film wafer type low-resistance element TCR Calculated size illustration Figure 6 is a wafer-type high-precision low-resistance element diagram of the present invention, where Figure 6A is a plan view, Figure 6B is a cross-sectional view, and Figure 6C is a longitudinal-cut view. Figures 7 A to 7J This is the process drawing of the production method of the present invention; "Comparison of component names and symbols in the illustration" Substrate 101 120 140 Copper foil protective layer resistance trimming area 2: resistance layer 2 0 1: alloy metal wire 3: conductor layer 301, 302, 303, 4: Protective layer 1 00: Machine board 1 1 1, 1 1 2: Insulation cover 131 '132: Electrode structure 1 50: Insulation coating 2 0 0: Machine board 3 0 0: Machine board 304: Conductor layer 400 : Machine board 401 Resistive material 402 Protective layer 403 Conductor layer 5: Protective layer 6: Interface layer 7: Low TCR alloy metal material 9 0: Heat sink [Detailed description of the preferred embodiment

’ rd32厶Ο 3_ 五、發明說明（5) 第1圖至第4圖之習見技術，其詳細結構與缺點已詳述 如上，此處不再重複敛述。 本發明之元晶片型高精度低阻元件之新結構的詳細内 容敘述如下： 1.不管是厚膜或薄膜製程的電阻膜，膜本身（TCR)電 阻溫度係數均極低，甚至可低至5 OppM/ °C以下；所以晶片 型低阻元件的電阻溫度係數幾乎完全受到晶片本身接腳結 構導體的電阻溫度係數影響。以習見的薄膜晶片低阻元件 為例（請參第5圖）： 電極寬度7. 5mm二7500#m，估計單邊電極導體長度 800/zm以銅的電阻率1.72"Ω . cm為計算基準，導體厚度 為T以m ’則導體電阻為’Rd32 厶 Ο 3_ V. Description of the invention (5) The conventional technologies of Figures 1 to 4 have been described in detail. The details of the new structure of the high precision low-resistance element of the wafer type of the present invention are described as follows: 1. Whether it is a thick film or a thin film resistive film, the temperature coefficient of the film (TCR) resistance is extremely low, even as low as 5 OppM / ° C or less; so the temperature coefficient of resistance of the chip-type low-resistance element is almost completely affected by the temperature coefficient of resistance of the structure conductor of the chip itself. Take the conventional thin-film wafer low-resistance element as an example (see Figure 5): The electrode width is 7. 5mm and 7500 # m, and the estimated length of the unilateral electrode conductor is 800 / zm. The resistivity of copper is 1.72 " Ω.cm. As a reference, the conductor thickness is T and the conductor resistance is m.

Rc = ρ β/Α=[(1·72" Ω · 104#m. 800//m)/ (7500^m· Τμπι)3χ2-0.003669Ω/Τ=3.669 m Ω /T 若 T=17/zm，則 Rc(17) = 0.216mQ (17/zm 相當 0.5 o z銅箔） 若 T=35#m，則 Rc(35) = 0.105inn (35ym 相當 1.0 o z銅箔） 若 T=70#in，則 Rc(70)二 0.052πιΩ (7〇em 相當 2.0 o z銅箱） 再以 Rc(17) = 0. 216πιΩ TCR Rc = 3 0 0 0 ppM/°C 及 Rc( 1 7 ) = 4. 784πιΩRc = ρ β / Α = [(1 · 72 " Ω · 104 # m. 800 // m) / (7500 ^ m · Τμπι) 3χ2-0.003669Ω / T = 3.669 m Ω / T if T = 17 / zm , Then Rc (17) = 0.216mQ (17 / zm is equivalent to 0.5 oz copper foil) If T = 35 # m, then Rc (35) = 0.105inn (35ym is equivalent to 1.0 oz copper foil) If T = 70 # in, then Rc (70) = 0.052πιΩ (7〇em is equivalent to a 2.0 oz copper box) and then Rc (17) = 0.216πΩΩ TCR Rc = 3 0 0 0 ppM / ° C and Rc (1 7) = 4. 784πιΩ

TCR.RL=50 ppM/°C 計算整體 TCR 4. 7 84m Ω X 50 ppM/t： x 100〇C = 0.02392ιηΩTCR.RL = 50 ppM / ° C Calculate the overall TCR 4. 7 84m Ω X 50 ppM / t: x 100〇C = 0.02392ιηΩ

Μάδ η 3_____ 五、發明說明（6) 'Μάδ η 3_____ 5. Description of the invention (6) ''

〇.2l6mQ x 3000ppM/°C x 100 °C — 〇.〇648mQ 因 TCR 之阻值變化為 0. 02392 + 0. 0648 = 〇. 〇8872ιηΩ 综合後，整體 TCR 為0·08872ιπΩ/(5ιηΩχΐ〇(Γ(：) = l77ppM/〇C 由於如第2圊所示，習知技藝例2中之合金金屬線本身 即具有極低之電阻溫度係數特性’故本發明採取以具極低 TCR之合金金屬為晶片元件本體之方式，將導體電阻降至 最低，進而達成低電阻溫度係數的特性。 2, 基於上述之原則’本發明乃藉由機械衝壓製程加工 方式製作元件本體，並經適當組合製程之後，以阻值修整 製程配合適當量測，製作出高精度的低阻元件。 3. 完整敘述：茲參照第6圖及第7圖逐條說明本發明之 製程。 3. 1本發明之晶片型低阻電流感測元件本體7使用具 有極低TCR之合金金屬，本身即具有良好散熱能力，同時 成為元件電性阻值之主要構成。 3. 2若採用圓形線材（如第7 A1圖），則先經滚壓製程 將材料形成元件所需之方形本體（如第7A2圖），若採方形 板材（如第7 B圖）則可直接用為元件本體。 3.3以衝壓模具的精確尺寸’衝製出元件所需的寬尺 寸，並以之為後續製程所需之結構要求。（如第7 c 1圖與第 7C2 圖）。 3. 4於電極區部位作絕緣覆蓋11 1、；[丨2，例如，以勝 帶作元件電極區正、反雙面貼附。（如第7D1圊與第7D2圖〇216mQ x 3000ppM / ° C x 100 ° C — 〇〇〇648mQ The resistance change due to TCR is 0.202392 + 0.0648 = 〇8872ιηΩ After synthesis, the overall TCR is 0.008872ιπΩ / (5ιηΩχΐ〇 ( Γ (:) = l77ppM / 〇C As shown in the second paragraph, the alloy metal wire in the conventional technique example 2 has extremely low resistance temperature coefficient characteristics. Therefore, the present invention adopts an alloy metal with extremely low TCR It is a method of chip component body, which reduces the resistance of the conductor to the lowest, and thus achieves the characteristics of low resistance temperature coefficient. 2. Based on the above principles, the present invention uses a mechanical stamping process to make the component body, and after proper combination of the manufacturing process With the resistance trimming process combined with appropriate measurement, a high-precision low-resistance component is produced. 3. Complete description: The process of the present invention will be described one by one with reference to FIGS. 6 and 7. 3.1 The wafer type of the present invention The low-resistance current sensing element body 7 uses an alloy metal with extremely low TCR, which itself has good heat dissipation ability and becomes the main component of the electrical resistance value of the element. 3.2 If a round wire is used (as shown in Figure 7 A1) , Then first roll In the pressing process, the material is formed into a square body (such as Fig. 7A2) required for the component. If a square plate (such as Fig. 7B) is used, it can be directly used as the component body. The required wide size, and the structural requirements required for subsequent processes (such as Figures 7 c 1 and 7C2). 3. 4 Insulation covering the electrode area 11 1; [丨 2, for example, The tape is used as the front and back sides of the component electrode area. (Figures 7D1 圊 and 7D2)

^4 324 0 3 五、發明說明（7) 所示）。 3. 5將元件本體電阻構成區四面以絕緣被覆，形成後 續電極電鍍t程之保護層120。（如第7E1圖與第7E2圖所 示）。 3. 6將電極區部位絕緣去除，如以膠帶貼附為例，將 膠帶剝離即可。（如第7F 1圖與第7F 2圖所示）。 3. 7將電極電鍍以製作電極結構1 3 1、1 3 2，建立元件 於使用時之銲接介面，同時降低電極區之整體電阻。（如 第7G1圖與第7G2圖所示）。 3. 8藉著測試與修整元件阻值及阻值，將元件阻值精 度調整至所需誤差值之内，此時，元件之表面有一阻值修 整區140。（如第7H1圖與第7H2圖所示）。 3. 9阻值修整區以絕緣塗佈而將修整後之元件本體暴 露區重新再加以絕緣被覆15 0。（如第7 11圖與第7 I 2圖所 示）。 3. 1 0元件衝壓成形製程將完成上述製程的帶狀相連 元件衝壓成單顆晶片形元件。（如第7 J 1圖與第7 J 2圖所 示）。 4. 藉由以上的元件及製作方法，製程可以完全相連一 貫化，生產無人化同時高精度、低TCR、散熱結構佳。 《本發明之實施》 本發明之晶片型高精度低阻元件及其製作方法並可以 作出以下的變化與應用： 1.變化使用合金金屬原材料的物理特性如體電阻率，^ 4 324 0 3 V. Explanation of the invention (7)). 3.5 The four sides of the component body resistance forming area are covered with insulation to form a protective layer 120 for subsequent electrode plating processes. (As shown in Figures 7E1 and 7E2). 3.6 Remove the insulation from the electrode area. For example, if the tape is attached, peel off the tape. (As shown in Figure 7F 1 and Figure 7F 2). 3.7 Electroplating the electrodes to produce electrode structures 1 3 1, 1 2 2 to establish the soldering interface of the component during use, while reducing the overall resistance of the electrode area. (As shown in Figure 7G1 and Figure 7G2). 3.8 By testing and trimming the component resistance and resistance value, the component resistance value accuracy is adjusted to the required error value. At this time, the component surface has a resistance value modification area 140. (As shown in Figure 7H1 and Figure 7H2). 3.9 The resistance trimming area is coated with insulation, and the exposed area of the trimmed component body is covered with insulation again. (As shown in Figures 7 11 and 7 I 2). 3. 10 The component press forming process punches the strip-shaped connected components that complete the above process into a single wafer-shaped component. (As shown in Figures 7 J 1 and 7 J 2). 4. With the above components and manufacturing methods, the manufacturing process can be completely connected and consistent, unmanned production, high precision, low TCR, and good heat dissipation structure. "Implementation of the present invention" The wafer-type high-precision low-resistance element of the present invention and the manufacturing method thereof can make the following changes and applications: 1. Change the physical characteristics such as the volume resistivity of alloy metal raw materials,

第10頁 Ρζί /1 η 3_:_ 五、發明說明（8) 即可令相同長寬尺寸的元件具有不同的功率規格。 2.變化合金金屬材料之使用與製程參數與治具即可製 作各種外觀尺寸與阻值之元件。 《發明之功效》 依本發明之製作方法所製作之晶片型低阻元件，具有 以下所述的功能及效果： 1. 較先前技術所製作的習知產品，製程上不用以批次 生產而能完全相連貫且無人化生產，可有效降低生產成 本。 2. 以極低TCR之合金金屬為元件本體，元件TCR就是合 金金屬TCR，此特性極優於既有之晶片型元件。 3. 以合金金屬為本體散熱能力極其優異。 4. 阻值維持應具有的高精度。 由於本發明所具有的改良特性以及所具有的功效，誠 為高精度低阻元件的革命性改進，確實具備實用性與新穎 性，合於專利法的發明專利，懇請賜予專利，實為德便。 需陳明者，以上所述為本發明的較佳具體實施例，對 於熟悉此項技藝之人士而言，任何對於本發明所作之些許 改變，若未脫離本發明之精神時，應該在本發明之申請專 利範圍之内，謹先陳明。Page 10 Ρζί / 1 η 3 _: _ 5. Description of the invention (8) The components with the same length and width can have different power specifications. 2. Varying the use of alloy metal materials and process parameters and fixtures can produce components with various appearance sizes and resistance values. "Effects of the Invention" The wafer-type low-resistance element manufactured according to the manufacturing method of the present invention has the following functions and effects: 1. Compared with the conventional products manufactured by the prior art, the production process can be performed without batch production. Fully coherent and unmanned production can effectively reduce production costs. 2. The alloy body with extremely low TCR is used as the component body. The component TCR is the alloy metal TCR, which is superior to existing wafer-type components. 3. The alloy metal has excellent heat dissipation ability. 4. The resistance value should have high accuracy. Due to the improved characteristics and efficacy of the present invention, it is a revolutionary improvement of high-precision low-resistance components. It does have practicality and novelty. It is an invention patent that complies with the patent law. . For those who need to know, the above is a preferred embodiment of the present invention. For those familiar with this technology, any changes made to the present invention should be in the present invention without departing from the spirit of the present invention. Within the scope of the patent application, I would like to present it first.

Claims (1)

P4 324 Q 3_ 六、申請專利範圍 1. —種晶片型高精度低阻元件之製作方法，包括下列 步驟： 以電阻溫度係數（T C R)極低之合金金屬作為基材； 利用具有精確尺寸的衝壓模具，衝製出元件所需尺寸 之基板； 於電極區部位作絕緣覆蓋； 將元件本體電阻構成區四面以絕緣被覆； 將電極區部位絕緣去除； 將電極電鍍以製作電極結構，建立元件於使用時之銲 接介面，同時降低電極區之整體電阻； 藉著測試與修整元件阻值及阻值，將元件阻值精度調 整至所需誤差值之内； 阻值修整區以絕緣塗佈而將修整後之元件本體暴露區 重新再加以絕緣被覆： 元件衝壓成形製程將完成上述製程的帶狀相連元件衝 壓成單顆晶片形元件4 2. 如申請專利範圍第1項之晶片型高精度低阻元件之 製作方法，其中，基材為圓形金屬線材滾壓而得者。 3. 如申請專利範圍第1項之晶片型高精度低阻元件之 製作方法，其中，基材為方形金屬板材者。 4. 如申請專利範圍第1項之晶片型高精度低阻元件之 製作方法，其中，電極區部位之絕緣覆蓋係以膠帶作元件 電極區之雙面貼附者。 5. 如申請專利範圍第4項之晶片型高精度低阻元件之P4 324 Q 3_ VI. Scope of Patent Application 1. — A method for manufacturing wafer-type high-precision low-resistance components, including the following steps: Using alloy metal with extremely low temperature coefficient of resistance (TCR) as the substrate; using stamping with precise dimensions A mold is used to punch a substrate of the required size for the component; the electrode area is covered with insulation; the four sides of the component resistance forming area of the component are covered with insulation; the electrode area is insulated and removed; the electrode is plated to make the electrode structure, and the component is used. The soldering interface at the same time, while reducing the overall resistance of the electrode area; by testing and trimming the component resistance and resistance value, the component resistance value accuracy is adjusted to the required error value; the resistance trimming area is insulated and coated to trim The exposed area of the component body is then covered with insulation again: The component press forming process punches the strip-shaped connected components that have completed the above process into a single wafer-shaped component 4 2. The wafer-type high-precision low-resistance component such as the first item in the scope of patent application In the manufacturing method, the base material is obtained by rolling a circular metal wire. 3. For the manufacturing method of the wafer-type high-precision low-resistance element according to the first patent application scope, wherein the base material is a square metal plate. 4. For the manufacturing method of the wafer-type high-precision low-resistance element according to the item 1 of the patent application scope, in which the insulating covering of the electrode area is made of tape on both sides of the element electrode area. 5. As for the chip type high precision and low resistance component in the scope of patent application No. 4 第12頁Page 12 第13頁Page 13