TW430995B - Method for fabricating thin film transistor - Google Patents

Method for fabricating thin film transistor

Info

Publication number
TW430995B
TW430995B TW088105893A TW88105893A TW430995B TW 430995 B TW430995 B TW 430995B TW 088105893 A TW088105893 A TW 088105893A TW 88105893 A TW88105893 A TW 88105893A TW 430995 B TW430995 B TW 430995B
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
gate electrode
fabricating thin
silicon oxide
Prior art date
Application number
TW088105893A
Other languages
Chinese (zh)
Inventor
Woo-Young So
Original Assignee
Samsung Display Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Devices Co Ltd filed Critical Samsung Display Devices Co Ltd
Application granted granted Critical
Publication of TW430995B publication Critical patent/TW430995B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

The present invention relates to a method for fabricating thin film transistor, wherein the gate electrode is formed by metal or polysilicon, a silicon oxide film is formed around the gate electrode by thermal annealing. The silicon oxide film is used to form the offset region. The thin film transistor fabricated based on the method of the present invention has a gate electrode with low resistivity and the substrate won't be deformed, so that the reliability of the liquid crystal display device is enhanced.
TW088105893A 1998-05-19 1999-04-14 Method for fabricating thin film transistor TW430995B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980017944A KR100271491B1 (en) 1998-05-19 1998-05-19 Method of manufacturing thin film transistor

Publications (1)

Publication Number Publication Date
TW430995B true TW430995B (en) 2001-04-21

Family

ID=19537476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088105893A TW430995B (en) 1998-05-19 1999-04-14 Method for fabricating thin film transistor

Country Status (4)

Country Link
US (1) US6218220B1 (en)
JP (1) JP4149609B2 (en)
KR (1) KR100271491B1 (en)
TW (1) TW430995B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414868B (en) * 2005-12-28 2013-11-11 Samsung Display Co Ltd Display panel, thin film transistor substrate, and method of manufacturing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437474B1 (en) * 2001-04-04 2004-06-23 삼성에스디아이 주식회사 Dual channel TFT and Method for Fabricating the same
US7288444B2 (en) * 2001-04-04 2007-10-30 Samsung Sdi Co., Ltd. Thin film transistor and method of manufacturing the same
JP4638115B2 (en) * 2002-07-05 2011-02-23 シャープ株式会社 Method for manufacturing thin film transistor device
KR101026808B1 (en) 2004-04-30 2011-04-04 삼성전자주식회사 Manufacturing method for thin film transistor array panel
KR102442615B1 (en) * 2015-07-09 2022-09-14 삼성디스플레이 주식회사 Method of fabricating thin film transistor substrate
US10871048B2 (en) * 2017-11-08 2020-12-22 Geodynamics, Inc. Controlled bypass plug and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2779289B2 (en) * 1992-05-11 1998-07-23 シャープ株式会社 Method for manufacturing thin film transistor
KR940010384A (en) * 1992-10-23 1994-05-26 이헌조 Method of manufacturing thin film transistor
US5830787A (en) * 1993-03-18 1998-11-03 Lg Semicon Co., Ltd. Method for fabricating a thin film transistor
KR950012702A (en) * 1993-10-21 1995-05-16 이헌조 Method of manufacturing thin film transistor
KR0124626B1 (en) * 1994-02-01 1997-12-11 문정환 Thin filem transistor manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414868B (en) * 2005-12-28 2013-11-11 Samsung Display Co Ltd Display panel, thin film transistor substrate, and method of manufacturing the same
US8647928B2 (en) 2005-12-28 2014-02-11 Samsung Display Co., Ltd. Method for manufacturing thin film transistor and liquid crystal by treating a surface layer
US8785934B2 (en) 2005-12-28 2014-07-22 Samsung Display Co., Ltd. Thin film transistor substrate for display panel

Also Published As

Publication number Publication date
JP4149609B2 (en) 2008-09-10
US6218220B1 (en) 2001-04-17
JPH11340474A (en) 1999-12-10
KR100271491B1 (en) 2000-11-15
KR19990085497A (en) 1999-12-06

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees