TW429553B - Nitride semiconductor device and a method of growing nitride semiconductor crystal - Google Patents

Nitride semiconductor device and a method of growing nitride semiconductor crystal

Info

Publication number
TW429553B
TW429553B TW088119726A TW88119726A TW429553B TW 429553 B TW429553 B TW 429553B TW 088119726 A TW088119726 A TW 088119726A TW 88119726 A TW88119726 A TW 88119726A TW 429553 B TW429553 B TW 429553B
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
semiconductor device
growing
based compound
substrate
Prior art date
Application number
TW088119726A
Other languages
Chinese (zh)
Inventor
Jong-Hak Won
Myeong-Seok Oh
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Application granted granted Critical
Publication of TW429553B publication Critical patent/TW429553B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

This nitride semiconductor device includes a BN based compound buffer layer between a substrate and a nitride crystalline layer. The buffer layer causes the high crystallization of the crystalline layer by preventing the mismatch of the lattice. By the small difference between a BN and sapphire, the difference of the lattice constant between the BN based compound and a sapphire substrate is also small. As result, the BN based compound between the substrate and the nitride crystalline layer is able to prevent the mismatch of the lattice.
TW088119726A 1998-12-22 1999-11-11 Nitride semiconductor device and a method of growing nitride semiconductor crystal TW429553B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980057119A KR20000041281A (en) 1998-12-22 1998-12-22 Nitride system semiconductor device and method for growing semiconductor crystal

Publications (1)

Publication Number Publication Date
TW429553B true TW429553B (en) 2001-04-11

Family

ID=19564520

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088119726A TW429553B (en) 1998-12-22 1999-11-11 Nitride semiconductor device and a method of growing nitride semiconductor crystal

Country Status (3)

Country Link
JP (1) JP2000188260A (en)
KR (1) KR20000041281A (en)
TW (1) TW429553B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100684928B1 (en) * 2000-07-07 2007-02-20 학교법인연세대학교 Compound semiconductor device including diffusion blocking layer of network structure and Method of manufacturing the same
JP2004247412A (en) * 2003-02-12 2004-09-02 Yamaha Corp Semiconductor multilayer structure, its fabricating method, and semiconductor device having that structure
KR100448352B1 (en) 2003-11-28 2004-09-10 삼성전기주식회사 Method for fabricating GaN-based nitride layer
JP2005210084A (en) * 2003-12-22 2005-08-04 Ngk Insulators Ltd Epitaxial substrate, semiconductor laminate structure, dislocation reduction method, and substrate for epitaxial formation
JP4535935B2 (en) * 2005-05-19 2010-09-01 日本電信電話株式会社 Nitride semiconductor thin film and manufacturing method thereof
KR100713031B1 (en) * 2005-12-30 2007-05-02 서울옵토디바이스주식회사 Gallium nitride-based compound semiconductor
JP5249721B2 (en) * 2008-11-06 2013-07-31 浜松ホトニクス株式会社 Silicon light emitting device
CN103733308B (en) * 2011-09-05 2016-08-17 日本电信电话株式会社 Nitride semiconductor structure with and preparation method thereof
JP6909191B2 (en) * 2018-09-27 2021-07-28 信越化学工業株式会社 Laminates, semiconductor devices and methods for manufacturing laminates
US20220285578A1 (en) * 2021-03-08 2022-09-08 Samsung Electronics Co., Ltd. Light-emitting diode and display device including the same
CN113628954A (en) * 2021-06-17 2021-11-09 中国电子科技集团公司第十三研究所 Preparation method of GaN-based material on SiC substrate and semiconductor device

Also Published As

Publication number Publication date
JP2000188260A (en) 2000-07-04
KR20000041281A (en) 2000-07-15

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees