TW428122B - The integrated phase-shift and binary photomask and the manufacturing method of the same - Google Patents

The integrated phase-shift and binary photomask and the manufacturing method of the same

Info

Publication number
TW428122B
TW428122B TW88117377A TW88117377A TW428122B TW 428122 B TW428122 B TW 428122B TW 88117377 A TW88117377 A TW 88117377A TW 88117377 A TW88117377 A TW 88117377A TW 428122 B TW428122 B TW 428122B
Authority
TW
Taiwan
Prior art keywords
shift
opening
blocking layer
manufacturing
same
Prior art date
Application number
TW88117377A
Other languages
Chinese (zh)
Inventor
Jian-Jau Huang
Wei-Je Huang
Jiun-Yuan Wu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88117377A priority Critical patent/TW428122B/en
Application granted granted Critical
Publication of TW428122B publication Critical patent/TW428122B/en

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Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

An integrated phase-shift and binary photomask and the manufacturing method of the same, wherein a transparent substrate is first provided, then form the phase shift layer and the blocking layer on the substrate sequentially. Then define the blocking layer and the phase shift layer to form a plurality of first openings and second openings for exposing the surface of the transparent substrate. Finally define the blocking layer so that the blocking layer only surrounds the circumference of the first opening. The area of the aforementioned first opening is larger than the predefined minimum area, and the area of the second opening is less than the predefined minimum area. The photomask is thereby manufactured wherein the circumference of the first opening is covered with the blocking layer, and the portion other than the first and the second opening is covered with a phase-shift layer.
TW88117377A 1999-10-08 1999-10-08 The integrated phase-shift and binary photomask and the manufacturing method of the same TW428122B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88117377A TW428122B (en) 1999-10-08 1999-10-08 The integrated phase-shift and binary photomask and the manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88117377A TW428122B (en) 1999-10-08 1999-10-08 The integrated phase-shift and binary photomask and the manufacturing method of the same

Publications (1)

Publication Number Publication Date
TW428122B true TW428122B (en) 2001-04-01

Family

ID=21642562

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88117377A TW428122B (en) 1999-10-08 1999-10-08 The integrated phase-shift and binary photomask and the manufacturing method of the same

Country Status (1)

Country Link
TW (1) TW428122B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6767675B2 (en) 2001-11-19 2004-07-27 Renesas Technology Corp. Mask and method of manufacturing the same
CN107092160A (en) * 2017-04-25 2017-08-25 友达光电股份有限公司 Photomask, corresponding spacer structure and liquid crystal panel using same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6767675B2 (en) 2001-11-19 2004-07-27 Renesas Technology Corp. Mask and method of manufacturing the same
CN107092160A (en) * 2017-04-25 2017-08-25 友达光电股份有限公司 Photomask, corresponding spacer structure and liquid crystal panel using same
TWI704411B (en) * 2017-04-25 2020-09-11 友達光電股份有限公司 Photo mask, corresponding spacer structure and liquid crystal panel using the same
CN107092160B (en) * 2017-04-25 2021-10-01 友达光电股份有限公司 Photomask, method for forming spacer structure and method for forming liquid crystal panel

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