Α7 Α7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（1 ) 技術領域： 本發明主要是指—種真空系統’更特別地說就是一種 與半導體製造設備結合的低溫泵真空系統。 背景技術 低溫泵常與半導體製造設備共用。比如說’在一種物 理蒸氣沉澱（PVD)系統中’低溫栗可將處理室內壓力 降至1 0托左右。該低溫泵須在不引進大量污染物於處理 室內的情形下完成工作。 如圖1所示，習知的低溫泵1 〇是利用一閘閥組合 1 6與如PVD等處理室1 4的開口 1 2接合。低溫泵也 可用來將其他形式之半導體製造設備的室體予以減壓。而 低溫泵1 0通常含有圓柱形的外殼1 8與入口 2 0及環繞 入口的凸緣2 2。 該低溫泉1 0有一入口導管2 4與排氣導管2 6。入 口導管2 4的開口位於低溫泵1 0的室體2 8上，並通常 附有一關斷閥3 0。排氣導管2 6的開口同樣在室體2 8 上’並經由一關斷閥3 4與機械泵3 2連接。入口導管 2 4可將清淨氣體（如氬氣等）引入室體2 8內》而排氣 導管2 6與泵3 2可將室體2 8內的氣體抽出。 在低溫泵1 0的室體2 8內有一些V形板3 6 a ， 36b ，36c ，與36d»該V形板可將流入室體28 內的空氣分散，並含有一 8 0。K的冷凝陣列或稱爲 ” 8 0 ° K陣列"。至於8 0。K陣列的功能將隨後再述 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — — — — — 1 I — — I*Λν·! — — !— 訂---I (請先閱讀背面之注意事項再填寫本頁) 4 A7 A7 Β7 -4θ€ί08 五、發明說明（2 ) 。同樣在低溫泵1 〇之室體2 8內的有數個倒置的杯形板 37。這些倒置的杯形板含有一”15° K的陣列"，其 也將隨後再述。該15。 K與80。 K陣列皆被一80 ° K的圓柱形輻射遮壁39所包圍，而15。 κ的陣列是 由一冷頭汽缸4 1所支撐。該冷頭汽缸4 1可在入口 4.3α 處注入高壓的氦氣，並將氦氣從出口 4 3 b處排出。當 冷頭汽缸4 1充入高躔氦氣時，可將該1 5。K陣列冷卻 至15° K左右，並將支撐於冷頭汽缸4 1與15° K 陣列37之上的80° K陣列冷卻至80° K左右。也就 是說，該1 5° K的陣列冷卻至氦氣的液態溫度附近，而 8 0 ° K的陣列則冷卻至氮氣的液態溫度附近》 如前所述，低溫泵1 0通常含有一 1 5° K陣列與一 80° K陣列。該15° K的陣列通常是一種底端附有活 性炭的倒置杯形板，並利用冷頭汽缸4 1將其超冷至1 5 。K左右，使得活性炭能經由一化學吸收過程泵送一些重 量輕的氣體，如氦氣，氫氣與氖氣等。而80° K行列通 常是一種同心金屬V形板的型式，比如V形板3 6 a — 3 6 d，其可經由一化學吸收過程來泵送較重的氣體，比 如氮氣，氧氣，一氧化碳，二氧化碳等氣體。 —種新的或是再生的低溫泵是相當有效率的’並可提 供約1 0托之超高純度真空。而低溫泵1 〇最高可達的真 空水準是受限於其泵送氫氣（H2)的能力。低溫泵1 0 的15° K陣列泵送氫氣的速度非常地緩慢’使氫氣本身 成爲處理室1 4內半導體晶片上的一薄膜層。這大部分是 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — — — — —------&!11#11---— II «^ . -~ 、 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（3 ) 因爲氫氣須在1 5 ° K陣列之倒置杯3 7底側的活性炭上 形成迴旋的路徑，結果使得活性炭表面與處理室1 4之間 有著非常低的傳導效果。這種無法有效率地泵送氫氣的結 果對PVD機器來說特別嚴重，因爲氫氣會”噴吐"在薄 膜層上而降低了薄膜層的品質》 氫氣將從室體14的不銹鋼牆中流出並經由水分解於 如鋁等新沉澱之金屬薄膜而得以連續地生成於處理室14 內。因爲該15° K陣列無法有效地移除此氫氣，所以 很快地就飽和而需予以”再生"。同樣地，當8 Ο ° K行 列充滿較重氣體並飽和時，其也需予以再生。這通常須使 冷頭汽缸4 1停止運作，而使低溫泵1 0降到室溫（大約 是2 5°C左右）。當室溫時，被15° K陣列與80 ° K陣列所吸收的氣體將釋放於室體28內並利用幫浦 3 2將其從室體內抽出。一種如超高純度（UHP )氬氣 等清淨氣體也可當再生過程時釋放於室體2 8內，以增加 室體2 8內的壓力，及促進幫浦3 2內的熱傳效果以加速 該再生過程_。 該低溫泵10通常利用一閘閥組合16而與處理室 1 4的凸緣3 8接合。習知科技的熟知者已對閘閥組合的 構造與使用非常地了解，所以不在此贅述。然而，典型的 閘閥組合1 6含有一個具有流孔4 2的閥體4 0 ，其可與 處理室1 4的開口 1 2以及低溫泵1 0的入口 2 0對齊。 該閥體4 0可附有適當的凸緣以維持低溫泵1 0與處理室 1 4之接合處的氣密性。該閘閥組合1 6含有一閘閥4 4 本紙張尺度適用中國國家標準（CNS>A4規格（210 /297公釐） -------— — — — — ^ i I----I ^- — — — — — 1 — , I I (請先閱讀背面之注意事項再填寫本頁) -6 - ^ w U — 〇 ^ Α7 ____Β7____ 五、發明說明（4 ) (請先閱讀背面之注意事項再填寫本頁) 與一閘閥移除機構4 6 ，其可將閘閥4 4從圖示中"開" 的位置移動到如44’所示關閉的位置。當閘閥44位於 關閉位置4 4’時，一密封圈4 8可防止氣體與其他物質 在處理室1 2與低溫泵1 0的室體2 8間流動。 因爲在PVD噴吐過程中，內含有氫氣與氬氣等其他 氣體的低溫泵1 0將快速地飽和，所以低溫泵需時常予以 再生。比如說，一個與P VD機器接合的低溫泵就必須偶 而地予以再生。這是相當昂貴的過程，因爲半導體製造設 備必須"離線"，因而減慢或停止了該半導體製造過程。 已知有一種非蒸發式吸收（N E G )泵用來與低溫泵 接合以嚐試解決上述問題。比如由J . Briesacher等人 在1 9 9 0年的超淨技術期刊中所發表的"半導體製造設 備的非蒸發式吸收泵"。然而如隨後所述，此種組合的幫 浦是不切實際的。 如習知科技知熟知者所知，吸收泵所使用的”吸收材 料”含有對特殊氣體有化學親和性的金屬合金。比如，一 金屬合金含有70%的锆，24. 6%的釩，5. 4%的 經濟部智慧財產局員工消費合作社印製 鐵，其對稀有氣體外的其他氣體皆具有強大的親和性。這 些”吸收"材料因而可用來快速地將氫氣"泵送”過化學 吸收過程。 當理論上欲將低溫泵與吸收泵組合時，習知科技所提 出的解答便顯得不太理想。比如說，吸收泵可與低溫栗結 合，如圖1所示將吸收泵置於低溫泵1 0與機械泵3 2的 旁邊。然而，如此將因爲半導體製造設備周圍的空間無法 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -7 - uU6162 A7 B7 五、發明說明（5 ) 容納組合式的低溫泵與吸收泵，以及相關的支撐硬體而產 生了 "成形因子"的問題。 另一解決之法是將吸收泵的活性元素置於低溫泵的室 體內。然而，此種形式也將因爲吸收泵與低溫泵的操作與 再生循環無法配合而變得不切實際。比如說，吸收泵的活 性元素以在室溫下操作最佳，而低溫泵的活性元素則須在 低溫環境中操作，比如15° K與80° K。此外，因爲 低溫泵元件需時常予以再生，所以吸收泵元件也需同時予 以再生。這是一個大問題，因爲如果吸收泵元件需再生十 次的話，低溫泵需予以再生數百次之譜。這將導致昂貴吸 收材料的快速損耗》另外，如果吸收材料在低溫泵的活性 元素再生之前便從低溫泵組合中移除的話，該低溫泵組合 也必須從設備中以極爲費時與可能造成系統污染的程序予 以移除及更換。 在美國專利號碼5 ，3 5 7，7 6 0 中，Higham提 出一種低溫泵/吸收泵的組合，其爲一種整合式的兩階段 幫浦形式。該第一階段幫浦爲具有泵室體與安裝於擴散器 上之低溫陣列的一種低溫泵，以將真空室內的主要氣體予 以低溫冷凝。而第二階段幫浦則於室溫下操作並含有一個 以上的吸收泵，其主要功能爲移除氫氣分子。該第一與第 二幫浦階段是"一體地"安裝於單一殼體內。因此，吸收 泵的活性元件將如前所述地位於低溫泵的室體內。 ‘ 該Higham幫浦也同樣有上述的問題，就是其低溫泵 元件與吸收泵元件需暴露於相同的熱力與大氣環境中。因 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I---!.权·----ί — 訂·--------線， (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 406162 五、發明說明（6 ) (靖先«讀背面之注意事項再填窝本頁) 爲低溫泵元件在低溫環境下操作，而吸收泵則是在室溫附 近操作，所以吸收泵元件與低溫泵元件之間需予以熱隔絕 以降低熱傳導效果。而熱傳導也會因爲吸收材料置於幫浦 的底部而降低。值得注意的是，該High am幫浦並未使用 1 5° K的陣列，也因此無法泵送氖氣或氦氣》之所以不 使用15° K陣列的理由是爲了消除積體電路製造過程中 ，陣列中的碳原子可能造成的污染。同樣的，爲低溫泵元 件需更頻繁地予以再生，所以吸收泵元件的再生次數也比 前述位於相同泵室體的情形來得頻繁。特別地說，吸收再 生所需的高溫（比如大於4 5 0 C )將會不可逆地損壞低 溫泵元件，特別是指典型使用的銦墊圈。此外，高溫也會 毀損低溫泵的冷凝系統。 因此習知科技並無法提出一個能符合半導體製造設備 之成形因子要求的組合式低溫泵/吸收泵，該因子可輕易 地使用與維護，並可指出低溫泵元件與吸收泵元件兩者的 特殊操作與再生問題。 經濟部智慧財產局員工消費合作社印製 發明描述 低溫泵常與半導體製造設備共用。比如說’在一種物 理蒸氣沉澱（P VD )系統中，低溫泵可將處理室內壓力 降至1 0托左右。該低溫泵須在不引進大量污染物於處理 室內的情形下完成工作。 如圖1所示，習知的低溫泵1 0是利用一閘閥組合 1 6與如PVD等處理室1 4的開口 1 2接合。低溫泵也 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 406162 B7 五、發明說明（7 ) 可用來將其他形式之半導體製造設備的室體予以減壓》而 低溫泵1 0通常含有圓柱形的外殼1 8與入口 2 0及環繞 入口的凸緣2 2。 該低溫泵1 0有一入口導管24與排氣導管26。入 口導管2 4的開口位於低溫泵1 〇的室體2 8上，並通常 附有一關斷閥3 0。排氣導管2 6的開口同樣在室體2 8 上，並經由一關斷閥3 4與機械泵3 2連接。入口導管 2 4可將清淨氣體（如氬氣等）引入室體2 8內。而排氣 導管2 6與泵3 2可將室體2 8內的氣體抽出。 在低溫泵1 0的室體2 8內有一些V形板3 6 a ， 36b，36c ，與36d。該V形板可將流入室體28 內的空氣分散，並含有一80° K的冷凝陣列或稱爲 ”80° K陣列"。至於8 0 ° K陣列的功能將隨後再述 。同樣在低溫泵1 0之室體2 8內的有數個倒置的杯形板 37。這些倒置的杯形板含有一 "15° K的陣列”，其 也將隨後再述。該15° K與80° K陣列皆被一 80 。K的圓柱形輻射遮壁39所包圍，而15° K的陣列是 由一冷頭汽缸41所支撐。該冷頭汽缸41可在入口 4 3 a處注入高壓的氦氣，並將氦氣從出口 4 3 b處排出 。當冷頭汽缸4 1充入高壓氦氣時，可將該1 5° K陣列 冷卻至15° K左右，並將支撐於冷頭汽缸41與15° K陣列37之上的80° K陣列冷卻至80° K左右。也 就是說，該15° K的陣列冷卻至氦氣的液態溫度附近， 而80° K的陣列則冷卻至氮氣的液態溫度附近。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) ¾--------，訂—Μ------線. 經濟部智慧財產局員工消費合作社印製 -10 - 406162 A7 B7 五、發明說明（8 ) 如前所述，低溫泵10通常含有一15° K陣列與一 80° K陣列。該15° K的陣列通常是一種底端附有活 性炭的倒置杯形板，並利用冷頭汽缸4 1將其超冷至1 5 4 Κ左右，使得活性炭能經由一化學吸收過程泵送一些重 量輕的氣體，如氦氣，氫氣與氖氣等。而80° Κ陣列通 常是一種同心金屬V形板的型式，比如V形板3 6 a — 3 6 d，其可經由一化學吸收過程來泵送較重的氣體，比 如氮氣，氧氣，一氧化碳，二氧化碳等氣體。 一種新的或是再生的低溫泵是相當有效率的，並可提 供約1 0托之超高純度真空。而低溫泵1 0最高可達的真 空水準是受限於其泵送氫氣（H2)的能力。低溫泵1 0 的15° K陣列泵送氫氣的速度非常地緩慢，使氫氣本身 成爲處理室1 4內半導體晶片上的一薄膜層。這大部分是 因爲氫氣須在1 5° K陣列之倒置杯3 7底側的活性炭上 形成迴旋的路徑，結果使得活性炭表面與處理室1 4之間 有著非常低的傳導效果。這種無法有效率地泵送氫氣的結 果對PVD機器來說特別嚴重，因爲氫氣會"噴吐”在薄 膜層上而降低了薄膜層的品質。 氫氣將從室體14的不銹鋼牆中流出並經由水分解於 如鋁等新沉澱之金屬薄膜而得以連續地生成於處理室14 內。因爲該15° K陣列無法有效地移除此氫氣，所以很 快地就飽和而需予以"再生”。同樣地，當8 0 ° K陣列 充滿較重氣體並飽和時，其也需予以再生。這通常須使冷 頭汽缸4 1停止運作，而使低溫泵1 0降到室溫（大約是 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I----------— 訂- ---I----I (請先閲讀t面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -11 一 ^06162 A7 B7 經濟部智慧財產局員工消費合作钍印製 五、發明說明（9 ) 25C左右）。當室溫時，被15° K陣列與80。 K陣 列所吸收的氣體將釋放於室體2 8內並利用幫浦3 2將其 從室體內抽出。一種如超高純度（UHP )氬氣等清淨氣 體也可當再生過程時釋放於室體2 8內，以增加室體2 8 內的壓力，及促進幫浦3 2內的熱傳效果以加速該再生過 程。 該低溫泵10通常利用一閘閥組合16而與處理室 1 4的凸緣3 8接合。習知科技的熟知者已對閘閥組合的 構造與使用非常地了解，所以不在此贅述。然而，典型的 閘閥組合1 6含有一個具有流孔4 2的閥體4 0，其可與 處理室1 4的開口 1 2以及低溫泵1 0的入口 2對齊。該 閥體4 0可附有適當的凸緣以維持低溫泵1 〇與處理室 1 4之接合處的氣密性。該閘閥組合1 6含有一閘閥4 4 與一閘閥移除機構4 6 ，其可將閘閥4 4從圖示中"開" 的位置移動到如44’所示關閉的位置。當閘閥44位於 關閉位置44’時，一密封圈48可防止氣體與其他物質 在處理室1 2與低溫泵1 〇的室體2 8間流動。 因爲在PVD噴吐過程中，內含有氫氣與氬氣等其他 氣體的低溫泵1 0將快速地飽和，所以低溫泵需時常予以 再生。比如說，一個與P VD機器接合的低溫泵就必須偶 而地予以再生。這是相當昂貴的過程，因爲半導體製造設 備必須"離線"，因而減慢或停止了該半導體製造過程。 已知有一種非蒸發式吸收（N E G )泵用來與低溫泵 接合以嚐試解決上述問題。比如由 J . Br iesacher等人 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (靖先閲讀背面之注意事項再填寫本頁》 裝 « n n I— -----訂-------線 -12 - 經濟部智慧財產局員工消費合作社印製 406162 A7 --—__ B7 五、發明說明（10 ) 在1 9 9 0年的超淨技術期刊中所發表的”半導體製造 設備的非蒸發式吸收泵”。然而如隨後所述，此種組合的 幫浦是不切實際的。 如習知科技知熟知者所知，吸收泵所使用的”吸收材 料"含有對特殊氣體有化學親和性的金屬合金。比如，一 金屬合金含有70%的鉻，24. 6%的釩，5_ 4%的 鐵’其對稀有氣體外的其他氣體皆具有強大的親和性。這 些π吸收M材料因而可用來快速地將氫氣”泵送”過化學 吸收過程。 當理論上欲將低溫泵與吸收泵組合時，習知科技所提 出的解答便顯得不太理想。比如說，吸收泵可與低溫泵結 合’如圖1所示將吸收泵置於低溫泵1 0與機械泵3 2的 旁邊。然而，如此將因爲半導體製造設備周圍的空間無法 容納組合式的低溫泉與吸收泵，以及相關的支撐硬體而產 生了”成形因子"的問題。 另一解決之法是將吸收泵的活性元素置於低溫泵的室 體內。然而，此種形式也將因爲吸收泵與低溫泵的操作與 再生循環無法配合而變得不切實際。比如說，吸收泵的活 性元素以在室溫下操作最佳，而低溫泵的活性元素則須在 低溫環境中操作，比如15° K與80° K。此外，因爲 低溫泵元件需時常予以再生，所以吸收泵元件也需同時予 以再生。這是一個大問題’因爲如果吸收栗兀件需再生十 次的話，低溫泵需予以再生數百次之譜。這將導致昂貴吸 收材料的快速損耗。另外’如果吸收材料在低溫泵的活性 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） I — — — — — — — ---I ! I — -117 I-------^ » <請先閱讀背面之注意事項再填寫本頁) -13 - 經濟部智慧財產局員工消費合作社印製 __406162 b7__ 五、發明說明（11 ) 元素再生之前便從低溫泵組合中移除的話，該低溫栗組合 也必須從設備中以極爲費時與可能造成系統污染的程序予 以移除及更換。 在美國專利號碼5 ，3 5 7 ，7 6 0中，Higham提 出一種低溫泵/吸收泵的組合，其爲一種整合式的兩階段 幫浦形式。該第一階段幫浦爲具有泵室體與安裝於擴散器 上之低溫陣列的一種低溫泵，以將真空室內的主要氣體予 以低溫冷凝。而第二階段幫浦則於室溫下操作並含有一個 以上的吸收泵’其主要功能爲移除氫氣分子。該第一與第 二幫浦階段是"一體地11安裝於單一殼體內。因此，吸收 泵的活性元件將如前所述地位於低溫泵的室體內。 該Higham幫浦也同樣有上述的問題，就是其低溫泵 元件與吸收泵元件需暴露於相同的熱力與大氣環境中。因 爲低溫泵元件在低溫環境下操作，而吸收泵則是在室溫附 近操作，所以吸收泵元件與低溫泵元件之間需予以熱隔絕 以降低熱傳導效果。而熱傳導也會因爲吸收材料置於幫浦 的底部而降低。值得注意的是，該Higham幫浦並未使用 15° K的陣列，也因此無法泵送氖氣或氦氣。之所以不 使用15° K陣列的理由是爲了消除積體電路製造過程中 ，行列中的碳原子可能造成的污染。同樣的’爲低溫泵元 件需更頻繁地予以再生，所以吸收泵元件的再生次數也比 前述位於相同泵室體的情形來得頻繁。特別地說’吸收再 生所需的高溫（比如大於4 5 0 C )將會不可逆地損壞低 溫泵元件，特別是指典型使用的銦墊圈。此外’高溫也會 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------裝·----!·訂1·'1!---線 I (請先閲讀背面之注意事項再填寫本頁) -14 - 經濟部智慧財產局員工消費合作社印製 ____ 406162 B7 五、發明說明（l2 ) 毀損低溫泵的冷凝系統。 因此習知科技並無法提出一個能符合半導體製造設備 之成形因子要求的組合式低溫泵/吸收泵，該因子可輕易 地使用與維護，並可指出低溫泵元件與吸收泵元件兩者的 特殊操作與再生問題。 本發明的最佳模型 如圖1所示爲敘述於本發明之背景章節之先前的低溫 泵與閘閥組合。而本發明的低溫泵/吸收泵組合將以圖2 及後續圖片說明。 如圖2所示之本發明的低溫泵/吸收泵組合，包含有 一低溫泵5 2部分與一吸收泵5 4部分。該組合泵5 0最 好能藉由一閘閥組合6 0與一通往處理室的單一，共同開 口 5 8的凸緣5 6相結合，但也可以將吸收泵部分5 4的 凸緣6 2直接地與開口 5 8的凸緣5 6接合。當然，在組 合泵5 0 ，閘閥6 9與凸緣5 6之間應有適當的墊圈（未 示出）以確保組裝件間的氣密效果。爲說明清楚起見，圖 中之組合泵5 0 ，閘閥組合6 0與處理室的開口 5 8爲分 離的狀態，而操作時會有適當的扣件（未示出）將該三種 元件接合。 低溫泵部分5 2最好能含有一由不銹鋼或鋁等適當材 質所作成的圓柱殼6 4。該殼6 4含有圓柱側牆6 6與圓 形底板6 8 »由側牆6 6與底板6 8可圍成一低溫泵室 67。低溫泵室67內有一些V形板70a ’ 70b ， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公嫠） — — — — — — — — — — — I— - — — ml— « — — — — — — I— — (請先閲讀背面之注意事項再填寫本頁) -15 - 406162 A7 ___________B7___ 五、發明說明（) 70c ，與7〇d等’其中含有與習知科技相同的8〇 。K陣列。而圖中也有一些倒杯形物體72含有15。 K 的陣列。有一冷頭汽缸7 3可支撐並冷卻該1 5。κ與 8 0 K之付列。該冷頭汽缸7 3有一氮氣入口 7 5 a與 一氦氣出口 7 5 b。如前所述，一圓形的8 〇。κ輻射罩 防護77包圍著該15° K與80° K陣列。低溫栗部分 5 2有一入口 7 6當操作時可與處理室的開口 5 8連通。 低溫泵部分5 2與吸收泵部分5 4之間最好能有一隔 熱物質7 8將兩者隔離。該隔熱物質最好也是圓形並且與 低溫泵部分5 2的A軸同心》 該吸收泵部分5 4最好也是圓形，並且包含一內牆部 分8 0，一外牆部分8 2，前述的凸緣6 2可構成外牆部 分8 2的上緣，以及一環形的底板8 4。其材質同樣爲不 銹鋼或金屬鋁。在內牆部分8 0與外牆部分8 2之間有一 "殼"7 9體頂端，可打開並形成吸收泵的入口 86，當 操作時可與處理室的相同開口 5 8連通。如此需使組合泵 5 0的直徑約與舊有之低溫泵的直徑相同才行。換句話說 ，組合泵5 0的"形成因子”最好能與舊有的低溫泵約略 相同。當然，如果空間夠的話，"形成因子"的些許變化 也是可以接受的。 吸收泵部分54的牆壁80 ，82 ，與84以圓柱環 形型式圍成一殼內7 9的室體8 8。此室體8 8內有一些 活性元素9 0a，90b，與9 0c存在。將於隨後詳述 的是，這些活性元件9 0 a _ 9 0 c最好能含有附加於元 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) ^_丨！ •訂--------線 經濟部智慧財產局員工消費合作社印製 _ 16 - 經濟部智慧財產局員工消費合作社印製 A7 406162 B7 _ 五、發明說明（14 ) 件表面之吸收物質的波浪狀支撐條。適當的吸收材料如義 大利的 SAES GETTERS ’ Inc.，〇f Lainate，其將於隨後 詳述。 一機械泵會與低溫泵5 2的室體6 7及吸收泵5 4的 室體8 8接合。更進一步說，一個附有閥9 6的導管9 4 可連接室體6 7與泵9 2的”T"形接頭9 8，而導管 1 0 0則是利用閥1 0 2將室體8 8及” Τπ型接頭9 8 連接。如氬氣等超高純度（UHP )的氣源1 〇 4可與室 體6 7及8 8連接。更進一步說，其中一導管1〇 6經由 一閥1 0 7而連接吸收泵5 4的室體8 8與氣源1 〇 4的 "Τ"型接頭10 8，而另一導管110則是連接室體 6 7與"Τ "型接頭1 0 8。 圖3是沿圖2之3 — 3剖面的視圖。由圖2與圖3可 知，低溫泵部分5 2，吸收泵部分5 4，與絕緣材料7 8 都是圓柱型。如圖3 ，凸緣6 2上有許多螺栓孔1 1 4可 裝入螺栓（未示出）而與另一凸緣接合。波浪狀的活性吸 收元件9 0 a構成一環狀並貼附於殼7 9的外牆上8 2。 吸收筒斷面的實例已描述於期刊Journal of Ultraclean Tech-nology之文件"半導體處理設備所使用之非蒸發式 吸收泵"，該文爲本專利的參考文獻。該絕熱材料78位 於低溫泵5 2與吸收泵5 4之間。此絕熱材料可先預製並 裝入低溫泵5 2與吸收泵5 4之間’或是可以射出成型方 式將海綿狀絕熱材料注入低溫泵5 2的外牆與吸收泵5 4 的內牆之間。波浪板7 0 a — 7 0 d位於低溫泵5 2之內 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先《讀背面之注意事項再填寫本頁) 袭--------.訂---：------線 406162 A7 -----B7_______ 五、發明說明（I5 ) 0 圖3 a所示之圖爲圖2中3 a圓圈所圍區域的詳細圖 。活性元素9 0 b所含的支撐條1 1 6附有吸收材料的顆 粒1 1 8。該支撐條1 1 6最好是波浪狀以增加表面積。 此領域的熟知者可知道一種適當的吸收材料1 1 8爲SAES Getters Inc.，Lainate義大利的產品，是附加於支撐 條1 1 6的理想材料》 圖4 a與圖4 b爲本發明之閘閥組合的兩種閘閥元件 。圖4 a的閘閥1 2 0有一單密封圏1 2 2與吸收泵的法 蘭62相齧合。該密封圈可爲一種”〇"形環。如此，該 密封圈1 2 2可將兩室體6 7，8 8與外界完全隔離。然 而，兩室體6 7，8 8間仍然有空氣流通，如箭頭G所示 。閘閥1 2 2可靠近及遠離凸緣面6 2 ’如箭頭1 2 6所 示，也可以橫向移動，如箭頭1 2 8所示。箭頭1 2 6與 1 2 8的移動方向可利用閘閥組合6 〇中的自動化機構（ 未示出）予以控制。 圖4b中，閘閥1 3 0附有兩個密封圏1 3 2與 1 34。該密封圈最好都能是形環。0形環1 32 的直徑較大，約等於吸收泵的外徑並與吸收栗的凸緣6 2 齧合。Ο形環1 3 4的直徑較小，約等於低溫菜5 2的直 徑並與低溫泵之側牆頂端相齧合。同樣的’兩0形胃 1 32與1 34將室體67，88與外界1 24隔離。而 在此例中，室體6 7與8 8之間被〇形環1 3 4所隔離° 因有0形環的存在，使得當閘閥1 3 〇位於途中關閉位置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先Μ讀背面之注意事項再填寫本頁) 裝--------訂---：-----線 經濟部智慧財產局員工消費合作社印製 -18 - 400162 A7 B7 五、發明說明（is ) 時’室體6 7，8 8間將無任何空氣流通。該閘閥1 3 0 可如箭頭1 2 6方向靠近或逮離凸緣6 2 ，也可依箭頭 1 2 8作側向移動。 圖5 a所示爲吸收元件的第一種實施例。在此實施例 中，牆體8 2’被縮短，而吸收板1 4 0則位於室體 88’內。吸收板最好是矩形且邊長爲〇. 5至1英吋之 間，而相鄰板的間隔約爲0.1”左右並由一適當的安裝 組合（未7K出）所支撑◊該板最好是由SAES Getters， SpA of Lainate，Italy的多孔性材吸收材料所製成。該 多孔性的吸收材質將隨後詳述。一種如石英燈1 4 2等輻 射熱源可用來加熱吸收板1 4 0以作再生之用。再生過程 是由一反射器1 4 4所輔助完成（比如一個拋光，彎曲的 不銹鋼板）。 如圖5 b所示爲吸收材料的第二種實施例。在該實施 例中，牆體82” ，與吸收板146都位於室體88"內 。吸收板約爲正方形’且其邊長最好在0. 5 - 1. 0 " 之間。同樣的，它們之間最好能有0 . 0 5至0 . 2 5英 吋的間隔，而且以〇 . 1 "最佳。然而在此例中，該板 1 4 6被一加熱桿1 4 8所支撐。該加熱桿可因而支撐並 固定吸收板，而且也可作爲再生過程的加熱器之用。該加 熱桿1 4 8最好是一種電阻式的加熱器" 較佳的系統操作 爲操作本發明之低溫泵/吸收泵組合，有時需開啓閘 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝--------.訂i:-------線 經濟部智慧財產局員工消費合作社印製 -19 - 406162 五、發明說明（17 ) 閥120 (圖4a)或閘閥130 (圖4b)。可首先將 閘閥1 2 0沿著箭頭1 2 6方向從吸收泵5 4的凸緣面 6 2移開，然後再將閛閥1 2 0向右朝箭頭1 2 8的方向 從低溫泵入口 7 6與吸收泵入口 8 6處移開。本領域的熟 練者對於此種將閘閥1 2 0或1 3 0從閘閥組合內移除的 機構亦相當熟悉。 ~旦閘閥1 2 0或1 3 0開啓後，低溫泵的入口7 6 與吸收泵的入口 8 6兩者皆與處理室的開口 5 8直接連通 。這可使低溫泵6 4與具有強化氫氣泵送功能的吸收泵 54兩者能正常地操作》當正常操作下，閥96，102 ，107，與11 2都是關閉狀態。 第一再生方法 下列第一再生方法將參考圖2，3，3a ，與4a。 因爲低溫泵5 2的再生次數比吸收泵5 4還頻繁，所以先 討論低溫泵的再生。如前所述，本發明的主要優點是低溫 泵5 2與吸收泵5 4可分離予以再生，使得吸收部分5 4 不因過度頻繁的再生而耗盡其能力。 爲再生該低溫泵5 2，閘閥1 2 0須如圖4 a的關閉 狀態。而閥1 02與閥1 1 2也要關閉》首先打開閥 1 0 7以使超高純度的氬氣流入室體8 8中並越過側牆 6 6的上緣而進入另一室體6 7中，如圖4 a的箭頭G所 示。然後打開閥9 6並驅動泵9 2以抽出室體6 7內的空 氣。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (諳先閱讀背面之注意事項再填寫本頁) '裝· 11111·訂·'!11 •線 I. 經濟部智慧財產局員工消費合作社印製 -20 - 406162 A7 ____B7_______ 五、發明說明（is ) 讓氬氣從室體8 8流入室體6 7內有三個主要目的。 首先，氣體流動可防止讓低溫泵的活性元素於再生時產生 的氣體流入室體8 8內並污染吸收泵5 4的活性元素。其 次，超高純度的氬氣可提供室體6 7內額外的壓力，使得 機械泵9 2的運作更有效率。這對於防止污染物從泵9 2 倒流入室體6 7的現象特別有用，比如可發生於室體6 7 內壓力太低時。第三，該額外的氣體可幫助低溫元件的熱 傳效果，以加速該元件的再生過程。 室體6 7內的溫度可上升至室溫左右，如此使得該氣 體被低溫泵的活性元素，比如1 5 ° K與8 Ο ° K陣列， 所吸收，否則的話室體6 7內的氣體會被泵9 2所抽完。 另可提供一種加熱機構（未示出）以加快加熱過程。當再 生循環結束時，所有的閥96，102，107，與 1 1 2都會關閉並將閘閥1 2 0移除，與前述者相同。 吸收泵5 4的再生步驟事先將閘閥元件1 2 0關閉。 打開閥1 0 7以讓氬氣流入吸收泵中，而低溫泵則作爲攫 取來自吸收泵之氬氣的幫浦之用。然後，超高純度的氬氣 可從室體8 8流入室體6 7內，如圖4 a的箭頭方向G所 示。該低溫泵5 2最好是維持在低溫的狀態’而活性材料 9 0 a — 9 0 c可用如電阻線圈1 3 6等加熱至約3 0 0 C左右。 再圖5 a與5 b的兩種實施例中，吸收板是用石英燈 1 4 2或加熱桿1 4 8分別予以加熱’而不用電阻線圈 1 3 6。位於低溫泵5 2與吸收泵5 4之間的絕緣材料 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) .------I i I I! ί 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 406162 at ___B7_____ 五、發明說明（19 ) 7 8可使兩者之間熱隔離’也可防止氬氣從室體6 7到流 回室體8 8中。當完成吸收泵之活性材料9 0 a — 9 0 c 的再生循環之後’閥96 ’ 102 ’ 107，與1 12都 會關閉，幫浦9 2停止運轉，並開啓閘閥1 2 0以開始組 合泵5 0的操作。 值得注意的是，每當吸收泵利用第一方法予以再生時 ，該低溫泵亦須加以再生’因爲低溫泵是泵送氬氣（與其 他由吸收泵的再生過程所釋放的氣體等）以從吸收泵流出 。然而，這不是問題，因爲低溫泵比典型吸收泵可再生更 多次，而且因爲幫浦組合中的吸收泵只須偶而地予以再生 〇 另外，低溫泵也可與吸收泵同時再生。這可先將低溫 泵的冷凍裝置關閉，使其加溫，並開啓閥9 6以及驅動幫 浦9 2以從低溫泵6 7中抽出從吸收泵室體8 8流入低溫 泵室體6 7的氬氣。這是一種較佳的方法，因爲低溫泵若 作爲洗淨吸收泵氣體之幫浦的話，將會很快地飽和。另外 ，全部再生時間也因此法而縮短。 第二再生方法 第二再生方法參考圖2，3 ，3a與4b。同樣的， 首先要探討的是低溫泵5 2的再生過程，然後再討論吸收 泵5 4的再生。 低溫泵5 2的再生過程要先將閘閥元件1 3 0關閉， 如圖4b所示。當關閉時’ 〇形環1 34可防止室體67 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝--------訂-------線 (請先閲讀背面之注意事項再填寫本頁) -22 - 經濟部智慧財產局員工消費合作社印製 406;16沙7 _ ___B7______ 五、發明說明（2〇 ) 與8 8間的氣體流動。低溫泵5 2之室體6 7內的溫度可 上升至室溫（利用適當的加熱機構）1因而可釋放任何被 活性元素所吸收的氣體。將閥1 〇 2與1 0 7關閉’開啓 閥9 6並驅動幫浦9 2。該釋放的氣體會被幫浦9 2抽完 。閥1 1 2可微開以使超高純度的氬氣流入室體6 7內以 促進幫浦9 2的操作，如前所述。 吸收泵5 4的第二種再生方法是先將閘閥元件1 3 0 關閉，如圖4b所示。將閥112與96關閉，開啓閥 1 0 2並驅動幫浦9 2。活性元素9 0 a - 9 O c可使用 如電阻線圏1 3 6等（或是如圖5 a的石英燈，或圖5 b 的加熱桿）加熱至約3 0 0 C以再生該活性元素。閥 1 0 7可打開以使超高純度的氬氣流入室體8 8內而輔助 幫浦9 2的操作。 應注意的是’上述再生該組合泵5 0的第一與第二方 法中’低溫泵5 2的室體6 7與吸收泵5 4的室體8 8至 少有兩種隔離的方法。首先，兩室體6 了與8 8可使用如 圖4a的氣流G，或是如圖4b的密封圈等予以隔離。此 種形式的隔離可防止當其他室體之活性元素再生時，該室 體之活性元素不致有污染現象產生。第二種隔離方式是採 取熱隔離’其主要是由隔熱材料7 8所提供。其他的隔熱 方式’比如一空氣溝’一真空溝，或是如水套等冷卻機構 〇 較佳的吸收材料 本紙張尺度通用中關家標準規格⑽x 297 ^--- (請先閱讀背面之注意事項再填寫本頁) 裝--------：訂i:-------破 -23 - ^06^62 B7 五、發明說明（21 ) 如前所述，本發明之吸收泵所使用的較佳吸收材料爲 —種來自 SAES Getters ，SpA of Lainate，義大利的多 孔性吸收材料。簡言之，製作此多孔吸收材料的方法是先 提供一種粒徑小於7 0 μ m的金屬吸收材料粉粒混合物； 而其中至少一種吸收合金的粒徑小於4 0 /zni。混合物中 也含有一種在常溫爲固態的有機成分，可在3 0 0 C時可 完全蒸發使得當混合物燒結時，不會在金屬吸收元件或是 吸收合金的晶粒上留下任何殘留物。此外，該有機粉粒的 粒徑分布應使得粒徑小於5 0 //m的含量超過總重的一半 ，而其餘的晶粒大小應介於5 0 em與1 5 0 pm之間。 接著該粉粒混合物將承受小於1 0 0 0 k: g/cm2的壓 力以形成一壓縮的粉粒混合物。該壓縮的粉粒混合物可在 溫度9 0 0 C與1 2 0 0 C之間並以5至6 0分鐘的時間 予以燒結。當燒結時，有機成分將從壓縮的粉粒混合物中 完全蒸發而不會在金屬吸收元件與吸收合金的晶粒上留下 殘留物，所以會在吸收材料內形成或大或小的孔隙。 在一實施例中，金屬吸收元件與吸收合金總量的重量 比在1 : 10與10 : 1之間。而在另一實施例中，重量 比則介於1 : 3與3 : 1之間。另一實施例中，粉粒混合 物中約含有4 0 %重量的有機成分。在某些實施例中，吸 收合金中含有鉻或鈦的雙重或三重合金。某一特殊實施例 中，吸收合金是一種锆-釩-鐵的三合金，其重量比爲锆 70%-釩24. 6%-鐵5. 4%’而金屬吸收材料爲 锆。而另一特殊實施例中，第二種吸收合金含有極強的氫 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (靖先閲讀背面之注意事項再填寫本頁) .裝--------.tri:-------線！ 經濟部智慧財產局員工消费合作社印製 -24 - 經濟部智慧財產局員工消費合作社印製 iO&iQ2 _- _ B7___ 五、發明說明（22 ) 氣吸收能力》另一實施例中，第二合金爲鉻-鋁合金，更 進一步說，該合金的的重量比爲锆8 4% —鋁1 6% » 該吸收材料最好能形成一種適合本發明之吸收泵用的 吸收物體。在一實施例中，該吸收體含有一平板，也可作 成一小球狀，一薄片或是碟片。該平板最好能將多孔狀的 粉粒吸收材料壓縮成固體形式》 低溫/吸收泵的較佳應.用 本發明之低溫與吸收組合泵的較佳應用是用在積體電 路上。更進一步說，本發明的低溫/吸收泵是製造半導體 晶片設備的一部份，如前述之P VD設備，以顯著地改善 積體電路的製作過程。 依本發明的積體電路製造過程是將一個組合式低溫/ 吸收泵安裝於一個以上的半導體積體電路製造設備內。於 是此半導體製造設備可結合該低溫/吸收泵而成爲製造積 體電路的主要步驟之一，比如在P VD機器或是離子注入 機器中處理半導體的晶片，兩者都對些微氫氣的污染敏感 。因爲本發明的低溫/吸收泵與標準低溫泵有同等形式且 能以相同方式操作，所以也能用在標準的積體電路製造程 序中，而得到更好的效果。此低溫/吸收泵的再生方式與 前述者相同。 雖然已描述了一些較佳實施例，而當本領域的熟知者 讀完此規範與圖示之後可輕易地將本發明作出很多變化， 修正與排列組合。此外，這裡的名詞術語只做說明清楚之 本7紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） <請先閲讀背面之注意事項再填寫本頁) 裝 -----:訂 ί.------- -25 - 經濟部智慧財產局員工消費合作社印製 406^62 _____B7___ 五、發明說明（23 ) 用，並無侷限之意。所以下列的申請專利範圍包含了所有 的變化，修正，排列組合與相似情形而不離開本發明的精 神與範圍。 圖示之簡述 圖1是舊有的低溫泵組合藉一閘閥組合與處理室接合 的斷面圖。 圖2是本發明之低溫/吸收泵組合的斷面圖。 圖3是圖2之低溫/吸收泵組合沿著3 - 3斷面的視 圖。 圖3 a是吸收泵中小部份活性元素的側視圖。 圖4 a是本發明之閘閥組合中之閘閥元件的第一個實 施例。 圖4 b是本發明第二實施例之閘閥組合中之閘閥元件 的第二種形式。 圖5 a是本發明之低溫/吸收泵組合之吸收元件中的 第一個實施例。 圖5 b是本發明之低溫/吸收泵組合之吸收元件中的 第二個實施例。 元件對照表 10 低溫泵 12-58 開口 14’28，67，88，88’ -88" 處理室 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------^--------1^-------^ (請先閲讀背面之注意事項再填寫本頁) 40616^ B7 五、發明說明（2〇 經濟部智慧財產局員工消費合作社印製 1 6 ，6 0 閘 閥 組 合 1 8 圓 柱 形 外 殼 2 0 ，4 3 a ， 7 5 a 2 2 ，3 8 ， 5 6 > 6 2 4 ，2 6 » 9 4 > 1 3 0 ，3 4 關 斷 閥 3 2 ，9 2 機 械 泵 3 6 a — 3 6 d > 7 0 3 7 ，7 2 > 7 4 杯 3 9 ，7 7 輻 射 罩 4 0 閘 閥 組 合 閥 體 4 1 ，7 3 冷 頭 汽 缸 4 2 流 孔 4 3 b ， 7 5 b 出 P 4 4 ，1 2 0 > 1 3 0 4 6 閘 閥 移 除 機 構 4 8 ，1 2 2 1 1 3 2 5 0 組 合 泵 5 2 低 溫 泵 5 4 吸 收 泵 部 份 6 9 ，9 6 j 1 0 2 6 6 側 牆 6 8 ，8 4 底 牆 7 8 絕 熱 材 料 7 6，8 6 入口 凸緣 0-110-106 入口導管 -7 0 d V形板 板陣列 閘閥 134 密封圈 0 7-112 閥 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------I--------訂.1^-------線 (請先閱讀背面之注意事項再填寫本頁) 4G6：I62 A7 __B7 五、發明說明（25 ) 7 9 殼 8 0 內牆部份 82，82’ 外牆部份 90a — 90c，116 支撐帶 98-108 接頭 104 超高純度氣源 114 螺栓孔 118 吸收材料 12 4 外界環境 13 6 電阻線圈 140，146 吸收板 144 反射器 148 加熱桿 (請先閱讀背面之注意事項再填寫本頁) --------訂-------------線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -28 -Α7 Α7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the Invention (1) Technical Field: The present invention mainly refers to a vacuum system ', more specifically, a cryopump vacuum system combined with semiconductor manufacturing equipment. BACKGROUND ART A cryopump is often shared with semiconductor manufacturing equipment. For example, 'in a physical vapor deposition (PVD) system' a low temperature pump can reduce the pressure in the processing chamber to about 10 Torr. The cryopump must be completed without introducing a large amount of pollutants into the treatment chamber. As shown in FIG. 1, a conventional cryopump 10 is connected to an opening 12 of a processing chamber 14 such as a PVD by a gate valve combination 16. The cryopump can also be used to decompress the chamber of other types of semiconductor manufacturing equipment. The cryopump 10 usually includes a cylindrical casing 18, an inlet 20, and a flange 22 surrounding the inlet. The low hot spring 10 has an inlet duct 24 and an exhaust duct 26. The opening of the inlet duct 24 is located in the chamber body 28 of the cryopump 10, and is usually provided with a shut-off valve 30. The opening of the exhaust duct 26 is also on the chamber body 8 'and is connected to the mechanical pump 32 via a shutoff valve 34. The inlet duct 2 4 can introduce clean gas (such as argon gas) into the chamber body 28, and the exhaust duct 26 and the pump 32 can extract the gas in the chamber body 28. In the chamber body 2 8 of the cryopump 10, there are some V-shaped plates 36a, 36b, 36c, and 36d. The V-shaped plate can disperse the air flowing into the chamber body 28 and contain 80. K's condensing array is also called "80 ° K array". As for 80 °, the function of the K array will be described later. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) — — — — — 1 I — — I * Λν ·! — —! — Order --- I (Please read the notes on the back before filling out this page) 4 A7 A7 Β7 -4θ € ί 08 V. Description of the invention (2). The same There are several inverted cup plates 37 in the chamber body 28 of the cryopump 100. These inverted cup plates contain a "15 ° K array", which will also be described later. The 15. K and 80. The K array is surrounded by a cylindrical radiation shielding wall 39, and 15 at 80 ° K. The κ array is supported by a cold head cylinder 41. The cold head cylinder 41 can inject high pressure helium gas at the inlet 4.3α and discharge the helium gas from the outlet 4 3b. When the cold head cylinder 41 is filled with high krypton helium, it can be 15. The K array is cooled to about 15 ° K, and the 80 ° K array supported on the cold head cylinders 41 and 15 ° K array 37 is cooled to about 80 ° K. That is, the 15 ° K array is cooled to near the liquid temperature of helium, while the 80 ° K array is cooled to near the liquid temperature of nitrogen. As mentioned earlier, cryopump 10 usually contains a 15 ° K array with an 80 ° K array. The 15 ° K array is usually an inverted cup plate with activated carbon attached to its bottom end and is supercooled to 15 by a cold head cylinder 41. Around K, the activated carbon can pump some light gas such as helium, hydrogen and neon through a chemical absorption process. The 80 ° K column is usually a type of concentric metal V-shaped plate, such as V-shaped plate 3 6 a-3 6 d, which can pump heavier gases, such as nitrogen, oxygen, carbon monoxide, through a chemical absorption process. Carbon dioxide and other gases. A new or regenerative cryopump is quite efficient 'and can provide an ultra-high purity vacuum of about 10 Torr. The highest vacuum level that cryogenic pumps can reach is limited by their ability to pump hydrogen (H2). The 15 ° K array of the cryopump 10 is pumping hydrogen very slowly, so that the hydrogen itself becomes a thin film layer on the semiconductor wafer in the processing chamber 14. Most of this is the size of this paper applicable to China National Standard (CNS) A4 (210 X 297 mm) — — — — —------ &! 11 # 11 ---— II «^.- ~, (Please read the notes on the back before filling out this page) Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Ministry of Economics and Intellectual Property Bureau Printed by the Employees ’Cooperatives A7 Β7 V. Description of the invention ° The K-shaped inverted cup 3 7 forms a convoluted path on the activated carbon on the bottom side, resulting in a very low conduction effect between the activated carbon surface and the processing chamber 14. This inability to efficiently pump hydrogen results in a serious problem for PVD machines, because hydrogen "spits" on the film layer and reduces the quality of the film layer. "The hydrogen will flow out of the stainless steel wall of the chamber body 14 and It is continuously generated in the processing chamber 14 through the decomposition of water on newly precipitated metal films such as aluminum. Because the 15 ° K array cannot effectively remove this hydrogen, it is saturated quickly and needs to be "regenerated" . Similarly, when the 80 ° K array is filled with heavier gases and is saturated, it also needs to be regenerated. This usually requires stopping the cold head cylinder 41 and lowering the cryopump 10 to room temperature (approximately 25 ° C). At room temperature, the gas absorbed by the 15 ° K array and the 80 ° K array will be released into the chamber body 28 and pumped out of the chamber body using pump 32. A clean gas such as ultra-high purity (UHP) argon can also be released into the chamber body 28 during the regeneration process to increase the pressure in the chamber body 28 and promote the heat transfer effect in the pump 32 to accelerate The regeneration process_. The cryopump 10 is usually engaged with a flange 38 of a processing chamber 14 by a gate valve combination 16. Those skilled in the art know the structure and use of the gate valve combination very well, so I won't go into details here. However, a typical gate valve assembly 16 contains a valve body 40 having a flow hole 42 which can be aligned with the opening 12 of the processing chamber 14 and the inlet 20 of the cryopump 10. The valve body 40 may be provided with appropriate flanges to maintain the airtightness of the joint between the cryopump 10 and the processing chamber 14. The gate valve combination 16 contains a gate valve 4 4 The paper size is applicable to Chinese national standards (CNS > A4 specification (210/297 mm) --------- — — — — ^ i I ---- I ^ -— — — — — 1 —, II (Please read the notes on the back before filling out this page) -6-^ w U — 〇7 Α7 ____ Β7 ____ 5. Description of the invention (4) (Please read the notes on the back before (Fill in this page) and a gate valve removal mechanism 4 6, which can move the gate valve 4 4 from the "open" position in the illustration to a closed position as shown at 44 '. When the gate valve 44 is in the closed position 4 4' At this time, a sealing ring 4 8 can prevent gas and other substances from flowing between the processing chamber 12 and the chamber 28 of the cryopump 10. Because during the PVD ejection process, the cryopump contains hydrogen and argon and other gases 10 will quickly saturate, so cryopumps need to be regenerated from time to time. For example, a cryopump connected to a P VD machine must be regenerated occasionally. This is a fairly expensive process because semiconductor manufacturing equipment must be "offline" ;, Thus slowing down or stopping the semiconductor manufacturing process. A non-evaporative absorption (NEG) pump is used in conjunction with a cryopump to try to solve the above problems. For example, the "Non-Semiconductor Manufacturing Equipment" published by J. Briesacher et al. Evaporative absorption pumps. However, as will be described later, such combined pumps are impractical. As known to those skilled in the art, the "absorbent materials" used in absorption pumps contain chemicals that are chemically resistant to specific gases. Affinity metal alloy. For example, a metal alloy contains 70% of zirconium, 24.6% of vanadium, and 5.4% of the printed iron produced by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It has a strong affinity. These "absorption" materials can therefore be used to quickly pump hydrogen "through the chemical absorption process. When theoretically it is desired to combine a cryopump with an absorption pump, the solution proposed by the conventional technology is It is not ideal. For example, the absorption pump can be combined with the low temperature pump, as shown in Figure 1, the absorption pump is placed next to the cryopump 10 and the mechanical pump 32. However, this will be because of the surrounding semiconductor manufacturing equipment. Space is not available This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -7-uU6162 A7 B7 V. Description of the invention (5) Accommodating combined cryopumps and absorption pumps, and related supporting hardware The problem of "forming factor" has arisen. Another solution is to place the active elements of the absorption pump in the chamber of the cryopump. However, this form will also be due to the operation and regeneration cycle of the absorption pump and cryopump. Uncooperative makes it impractical. For example, the active elements of the absorption pump are best operated at room temperature, while the active elements of the cryopump must be operated at low temperature, such as 15 ° K and 80 ° K. In addition, since the cryopump element needs to be regenerated from time to time, the absorption pump element also needs to be regenerated at the same time. This is a big problem because if the absorption pump element needs to be regenerated ten times, the cryopump must be regenerated hundreds of times. This will result in the rapid loss of expensive absorbent materials. In addition, if the absorbent material is removed from the cryopump assembly before the active elements of the cryopump are regenerated, the cryopump assembly must also be extremely time consuming and potentially contaminated from the equipment. Procedures are removed and replaced. In U.S. Patent No. 5,357,760, Higham proposed a cryopump / absorption pump combination, which is an integrated two-stage pump form. This first-stage pump is a cryopump with a pump chamber body and a cryogenic array mounted on a diffuser to condense the main gas in the vacuum chamber at low temperature. The second-stage pump operates at room temperature and contains more than one absorption pump, whose main function is to remove hydrogen molecules. The first and second pump stages are " integrated " mounted in a single housing. Therefore, the active element of the absorption pump will be located in the chamber of the cryopump as described above. ‘The Higham pump also has the above problem, that is, its cryopump element and absorption pump element need to be exposed to the same thermal and atmospheric environment. Because this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I I --- !. Right · ---- ί — Order · -------- line, (Please Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 406162 V. Description of the invention (6) It operates under the environment, and the absorption pump is operated near room temperature, so the thermal insulation between the absorption pump element and the cryopump element is needed to reduce the heat conduction effect. Heat transfer is also reduced because the absorbent material is placed on the bottom of the pump. It is worth noting that this High am pump does not use a 15 ° K array and therefore cannot pump neon or helium. The reason why the 15 ° K array is not used is to eliminate the integrated circuit manufacturing process. Pollution caused by carbon atoms in the array. Similarly, the cryopump element needs to be regenerated more frequently, so the number of regenerations of the absorption pump element is more frequent than in the case of the same pump chamber. In particular, the high temperatures required for absorption regeneration (eg greater than 450 ° C) will irreversibly damage low temperature pump components, especially the indium gaskets typically used. In addition, high temperatures can damage the cryopump's condensation system. Therefore, conventional technology cannot propose a combined cryopump / absorption pump that can meet the forming factor requirements of semiconductor manufacturing equipment. This factor can be easily used and maintained, and can point out the special operations of both cryopump elements and absorption pump elements. And regeneration issues. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Description of the invention Cryo pumps are often shared with semiconductor manufacturing equipment. For example, in a physical vapor deposition (PVD) system, a cryopump can reduce the pressure in the processing chamber to about 10 Torr. The cryopump must be completed without introducing a large amount of pollutants into the treatment chamber. As shown in FIG. 1, the conventional cryopump 10 is connected to an opening 12 of a processing chamber 14 such as a PVD by a gate valve combination 16. The cryogenic pump is also applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) on this paper scale. A7 406162 B7 V. Description of the invention (7) It can be used to decompress the chamber of other types of semiconductor manufacturing equipment. The pump 10 usually contains a cylindrical housing 18 with an inlet 20 and a flange 22 surrounding the inlet. The cryopump 10 has an inlet duct 24 and an exhaust duct 26. The opening of the inlet duct 24 is located in the chamber body 28 of the cryopump 10, and is usually provided with a shut-off valve 30. The opening of the exhaust duct 26 is also in the chamber body 2 8 and is connected to the mechanical pump 32 via a shutoff valve 34. The inlet duct 24 can introduce a clean gas (such as argon) into the chamber body 28. The exhaust duct 26 and the pump 32 can extract the gas in the chamber body 28. There are some V-shaped plates 36a, 36b, 36c, and 36d in the chamber body 28 of the cryopump 10. The V-shaped plate can disperse the air flowing into the chamber body 28 and contains a condensation array of 80 ° K or "80 ° K array". The function of the 80 ° K array will be described later. Also in There are several inverted cup plates 37 in the chamber body 28 of the cryopump 10. These inverted cup plates contain an array of "15 ° K", which will be described later. The 15 ° K and 80 ° K arrays are both 80 °. K is surrounded by a cylindrical radiation shielding wall 39, and a 15 ° K array is supported by a cold head cylinder 41. The cold head cylinder 41 can inject high-pressure helium gas at the inlet 4 3 a and discharge the helium gas from the outlet 4 3 b. When the cold head cylinder 41 is filled with high-pressure helium, the 15 ° K array can be cooled to about 15 ° K, and the 80 ° K array supported on the cold head cylinder 41 and the 15 ° K array 37 is cooled. To about 80 ° K. That is, the 15 ° K array is cooled to near the liquid temperature of helium, and the 80 ° K array is cooled to near the liquid temperature of nitrogen. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) ¾ --------, order -M ----- -Line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -10-406162 A7 B7 V. Description of the Invention (8) As mentioned earlier, the cryopump 10 usually contains a 15 ° K array and an 80 ° K array. The 15 ° K array is usually an inverted cup plate with activated carbon attached to the bottom end, and it is super-cooled to about 15 4 K by a cold head cylinder 41, so that the activated carbon can pump some weight through a chemical absorption process Light gases such as helium, hydrogen and neon. The 80 ° K array is usually a type of concentric metal V-shaped plate, such as V-shaped plate 3 6 a-3 6 d, which can pump a heavier gas, such as nitrogen, oxygen, carbon monoxide, through a chemical absorption process. Carbon dioxide and other gases. A new or regenerative cryopump is quite efficient and can provide ultra-high purity vacuum of about 10 Torr. The highest vacuum level of cryogenic pump 10 is limited by its ability to pump hydrogen (H2). The 15 ° K array of the cryopump 10 pumps hydrogen very slowly, making the hydrogen itself a thin film layer on the semiconductor wafer in the processing chamber 14. This is mostly because hydrogen must form a convoluted path on the activated carbon at the bottom of the inverted cup 37 of the 15 ° K array, resulting in a very low conduction effect between the activated carbon surface and the processing chamber 14. This inefficiency of pumping hydrogen gas is particularly serious for PVD machines, because hydrogen gas " spits " on the film layer and reduces the quality of the film layer. Hydrogen will flow out of the stainless steel wall of the chamber body 14 and It is continuously generated in the processing chamber 14 through the decomposition of water on newly precipitated metal films such as aluminum. Because the 15 ° K array cannot effectively remove this hydrogen, it is saturated quickly and needs to be "regenerated" . Similarly, when the 80 ° K array is filled with heavier gases and saturated, it also needs to be regenerated. This usually requires stopping the cold head cylinder 41 and lowering the cryopump 10 to room temperature (approximately this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I ----- -----— Order- --- I ---- I (Please read the precautions on t before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -11 一 ^ 06162 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperation print (5, invention description (9) about 25C). When room temperature, the array is 15 ° K with 80 °. The gas absorbed by the K array will be released in the chamber body 28 and extracted by the pump 32. A clean gas such as ultra-high purity (UHP) argon can also be released into the chamber body 28 during the regeneration process to increase the pressure in the chamber body 2 8 and promote the heat transfer effect in the pump 32 to accelerate The regeneration process. The cryopump 10 is usually engaged with a flange 38 of a processing chamber 14 by a gate valve combination 16. Those skilled in the art know the structure and use of the gate valve combination very well, so I won't go into details here. However, a typical gate valve assembly 16 contains a valve body 40 having a flow hole 42, which can be aligned with the opening 12 of the processing chamber 14 and the inlet 2 of the cryopump 10. The valve body 40 may be provided with appropriate flanges to maintain the airtightness of the joint between the cryopump 10 and the processing chamber 14. The gate valve assembly 16 includes a gate valve 4 4 and a gate valve removing mechanism 4 6, which can move the gate valve 4 4 from the "open" position in the figure to a closed position as shown in 44 '. When the gate valve 44 is in the closed position 44 ', a seal ring 48 prevents gas and other substances from flowing between the processing chamber 12 and the chamber body 28 of the cryopump 10. Because during the PVD discharge process, the cryopump 10, which contains hydrogen and other gases such as argon, will rapidly saturate, the cryopump needs to be regenerated frequently. For example, a cryopump connected to a P VD machine must be occasionally regenerated. This is a fairly expensive process because semiconductor manufacturing equipment must be " offline ", which slows or stops the semiconductor manufacturing process. A non-evaporative absorption (N E G) pump is known to be used in conjunction with a cryopump in an attempt to solve the above problems. For example, by J. Briesacher et al. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Jing first read the precautions on the back before filling in this page.) «Nn I------ Order ------- Line-12-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 406162 A7 ---__ B7 V. Description of the Invention (10) Published in the Ultra Clean Technology Journal of 1990 "Non-evaporative absorption pumps for semiconductor manufacturing equipment." However, as described later, such combined pumps are impractical. As known to those skilled in the art, "absorbing materials" used in absorption pumps Contains metal alloys that have chemical affinity for special gases. For example, a metal alloy contains 70% chromium, 24.6% vanadium, and 5-4% iron. It has a strong affinity for gases other than rare gases. These π-absorbing M materials can therefore be used to quickly "pump" hydrogen through a chemical absorption process. When theoretically it is desired to combine a cryogenic pump with an absorption pump, the solution proposed by the known technology is not ideal. For example Say, absorption pump can be combined with cryopump 'as shown in Figure 1 The absorption pump is shown next to the cryopump 10 and the mechanical pump 32. However, this will occur because the space around the semiconductor manufacturing equipment cannot accommodate the combined low-temperature spring and absorption pump, and the related supporting hardware "Formation factor" problem. Another solution is to place the active element of the absorption pump in the chamber of the cryopump. However, this form will also change because the operation and regeneration cycle of the absorption pump and cryopump cannot be coordinated. It is impractical. For example, the active elements of the absorption pump are best operated at room temperature, while the active elements of the cryopump must be operated in a low temperature environment, such as 15 ° K and 80 ° K. In addition, because the cryopump The components need to be regenerated from time to time, so the absorption pump components also need to be regenerated at the same time. This is a big problem 'because if the absorption pump needs to be regenerated ten times, the cryopump must be regenerated hundreds of times. This will cause expensive absorption Rapid material loss. In addition, if the absorbent material is active in a cryopump, the paper size applies the Chinese National Standard (CNS) A4 (210 x 297 mm) I — — - - - - --- I I -! -117 I ------- ^ » < Please read the notes on the back before filling this page) -13-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs __406162 b7__ V. Description of the Invention (11) If the element is removed from the cryopump assembly before regeneration, The low temperature chestnut combination must also be removed and replaced from the equipment with extremely time consuming and potentially polluting systems. In U.S. Patent Nos. 5,357,760, Higham proposed a cryopump / absorption pump combination, which is an integrated two-stage pump form. This first-stage pump is a cryopump with a pump chamber body and a cryogenic array mounted on a diffuser to condense the main gas in the vacuum chamber at low temperature. The second stage pump is operated at room temperature and contains more than one absorption pump ', whose main function is to remove hydrogen molecules. The first and second pump stages are integrally mounted in a single housing. Therefore, the active element of the absorption pump will be located in the chamber of the cryopump as described above. The Higham pump also has the above problem, that is, its cryopump element and absorption pump element need to be exposed to the same heat and atmospheric environment. Because the cryopump element is operated in a low temperature environment, and the absorption pump is operated near room temperature, thermal insulation between the absorption pump element and the cryopump element is required to reduce the effect of heat conduction. Heat transfer is also reduced because the absorbent material is placed on the bottom of the pump. It is worth noting that this Higham pump does not use a 15 ° K array and therefore cannot pump neon or helium. The reason why the 15 ° K array is not used is to eliminate the possible pollution caused by the carbon atoms in the ranks during the fabrication of integrated circuits. The same is that the cryopump element needs to be regenerated more frequently, so the number of regenerations of the absorption pump element is more frequent than in the case of the same pump chamber. In particular, the high temperature (such as greater than 450 ° C.) required for absorption regeneration will irreversibly damage low temperature pump components, especially the indium gaskets typically used. In addition, 'high temperature will also apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) to this paper size. -------- Installation · ----! · Order 1 ·' 1! --- line I (Please read the precautions on the back before filling this page) -14-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs __406162 B7 V. Description of the Invention (l2) Damage to the condensation system of the cryopump. Therefore, conventional technology cannot propose a combined cryopump / absorption pump that can meet the forming factor requirements of semiconductor manufacturing equipment. This factor can be easily used and maintained, and can point out the special operations of both cryopump elements and absorption pump elements. And regeneration issues. The best model of the present invention Figure 1 shows the previous cryopump and gate valve combination described in the background section of the present invention. The cryopump / absorption pump combination of the present invention will be illustrated with FIG. 2 and subsequent pictures. The cryopump / absorption pump combination of the present invention shown in FIG. 2 includes a cryopump 52 and a absorbing pump 54. The combination pump 50 is preferably combined with a single, common opening 5 8 flange 5 6 through a gate valve combination 60, but the flange 6 2 of the absorption pump portion 54 can also be combined. It directly engages the flange 5 6 of the opening 5 8. Of course, there should be a proper gasket (not shown) between the combined pump 50, the gate valve 69 and the flange 56 to ensure the air-tight effect between the assemblies. For the sake of clarity, the combination pump 50, gate valve combination 60 and opening 58 of the processing chamber are separated from each other in the figure, and appropriate fasteners (not shown) are used to join the three components during operation. The cryopump section 5 2 preferably contains a cylindrical case 64 made of a suitable material such as stainless steel or aluminum. The casing 64 includes a cylindrical side wall 6 6 and a circular bottom plate 6 8. A cryopump chamber 67 can be enclosed by the side wall 6 6 and the bottom plate 6 8. There are some V-shaped plates 70a '70b in the cryopump chamber 67. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 cm) — — — — — — — — — — — — — — — — ml — «— — — — — — — I— — (Please read the notes on the back before filling this page) -15-406162 A7 ___________B7___ V. Description of the invention () 70c, 70d, etc. 'It contains and knows technology The same 80. K array. In the figure, there are some inverted cup-shaped objects 72 containing 15. K's array. A cold head cylinder 7 3 can support and cool the 15. κ and 80 K are listed. The cold head cylinder 7 3 has a nitrogen inlet 7 5 a and a helium outlet 7 5 b. As mentioned earlier, a round 80. A κ radiant shield 77 surrounds the 15 ° K and 80 ° K arrays. The low temperature chestnut part 5 2 has an inlet 7 6 which can communicate with the opening 5 8 of the processing chamber during operation. The cryopump portion 5 2 and the absorption pump portion 54 can preferably be separated by a heat-insulating substance 7 8. The insulation material is also preferably circular and concentric with the A-axis of the cryopump portion 52. The absorption pump portion 54 is also preferably circular and includes an inner wall portion 80 and an outer wall portion 82. The flange 62 can form the upper edge of the outer wall portion 82, and an annular bottom plate 84. It is also made of stainless steel or metallic aluminum. Between the inner wall portion 80 and the outer wall portion 8 2 there is a "shell" 7 9 top of the body, which can be opened and forms the inlet 86 of the absorption pump, and can communicate with the same opening 5 8 of the processing chamber when in operation. It is necessary to make the diameter of the combined pump 50 about the same as that of the old cryopump. In other words, the "formation factor" of the combined pump 50 is preferably about the same as the old cryogenic pump. Of course, if there is enough space, some changes in the "formation factor" are acceptable. Absorption pump part The walls 80, 82, and 84 of 54 enclose a chamber 8 8 in a shell 7 9 in a cylindrical ring shape. This chamber 8 8 contains some active elements 9 0a, 90b, and 9 0c. Details will be described later. It is stated that these active elements 9 0 a _ 9 0 c should preferably be attached to the original paper size and apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the precautions on the back before filling in (This page) ^ _ 丨! • Order -------- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs _ 16-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 406162 B7 _ V. Description of the invention ( 14) Wavy support strips of absorbent material on the surface of the piece. Suitable absorbent materials are, for example, SAES GETTERS 'Inc., Italy Lafate, which will be detailed later. A mechanical pump and a cryopump 5 2 chamber body 6 7 and the chamber 8 8 of the absorption pump 5 4 are connected. Furthermore, A conduit 9 4 with a valve 9 6 can be connected to the "T " connector 9 8 of the chamber body 6 7 and the pump 9 2, while the duct 1 0 0 uses the valve 102 to connect the chamber body 8 8 and" Tπ " The connector 9 8 is connected. An ultra-high purity (UHP) gas source 104 such as argon can be connected to the chambers 67 and 88. Furthermore, one of the pipes 106 is connected via a valve 107 The chamber body 8 8 of the absorption pump 54 is connected to the " T " type connector 10 8 of the air source 104, and the other pipe 110 is connected to the chamber body 6 7 and the " T " type connector 1 0 8. Fig. 3 is a view taken along the section 3-3 of Fig. 2. From Fig. 2 and Fig. 3, it can be seen that the cryopump part 5 2, the absorption pump part 5 4 and the insulating material 7 8 are all cylindrical. As shown in Fig. 3, the flange 6 There are many bolt holes in 1 1 1 4 can be fitted with a bolt (not shown) to engage with another flange. The wavy active absorbing element 9 0 a forms a ring and is attached to the outer wall of the shell 7 9 8 2. An example of the cross section of the absorber has been described in the document of the Journal of Ultraclean Tech-nology " Non-evaporative absorption pump used in semiconductor processing equipment ", which is a reference of this patent. The material 78 is located between the cryopump 5 2 and the absorption pump 54. This heat insulating material can be prefabricated and filled between the cryopump 5 2 and the absorption pump 54, or the sponge-like thermal insulation material can be injected into the cryopump by injection molding. 5 2 between the outer wall and the inner wall of the absorption pump 5 4. The wave plate 7 0 a — 7 0 d is located within the cryopump 5 2 This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page) --------. Order ---: ------ line 406162 A7 ----- B7_______ V. Description of the invention (I5) 0 The picture shown in Figure 3a is shown in Figure 2 3a Detailed illustration of the area enclosed by the circle. The support element 1 0 6 contained in the active element 9 0 b is provided with particles 1 1 8 of an absorbent material. The support bar 1 1 6 is preferably wavy to increase the surface area. Those skilled in the art will know that a suitable absorbent material 1 1 8 is a product of SAES Getters Inc., Lainate Italy, and is an ideal material attached to the support bar 1 1 6 "Figure 4a and Figure 4b are the invention Two types of gate valve elements. The gate valve 120 of Fig. 4a has a single seal 圏 1 2 2 which is engaged with the flange 62 of the absorption pump. The sealing ring may be a "0" ring. In this way, the sealing ring 1 2 2 can completely isolate the two chambers 67, 88 from the outside world. However, there is still air between the two chambers 67, 88. Circulation, as shown by arrow G. The gate valve 1 2 2 can be moved toward and away from the flange surface 6 2 ′ as shown by arrow 1 2 6 or it can be moved laterally, as shown by arrow 1 2 8. Arrows 1 2 6 and 1 2 The movement direction of 8 can be controlled by the automatic mechanism (not shown) in the gate valve combination 60. In Fig. 4b, the gate valve 130 has two seals 1 32 and 1 34. The seal ring is preferably both It is a ring. The diameter of the 0 ring 1 32 is larger, which is approximately equal to the outer diameter of the absorption pump and meshes with the flange 6 2 of the absorption pump. The diameter of the 0 ring 1 3 4 is smaller, which is approximately equal to the low temperature dish 5 2 Diameter and mesh with the top of the side wall of the cryopump. The same 'two 0-shaped stomachs 1 32 and 1 34 isolate the chambers 67, 88 from the outside 1 24. In this example, the chambers 6 7 and 8 The 8 is separated by 0-ring 1 3 4 ° Because of the existence of 0-ring, when the gate valve 1 30 is in the closed position on the way, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male) Li) (Please read the precautions on the back before filling out this page) Packing -------- Ordering ---: ----- Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -18-400162 A7 B7 5. In the description of the invention (is), there will be no air circulation between the chambers 6, 7, 8 and 8. The gate valve 1 3 0 can approach or get away from the flange 6 2 in the direction of the arrow 1 2 6 or can also follow the arrow 1 2 8 for lateral movement. Figure 5a shows the first embodiment of the absorbing element. In this embodiment, the wall 8 2 'is shortened, and the absorption plate 1 40 is located inside the chamber 88'. The absorption plate is preferably rectangular with a side length of 0.5 to 1 inch, and the spacing between adjacent plates is about 0.1 "and is supported by a suitable mounting combination (not 7K out). Fortunately, it is made of porous absorbent material from SAES Getters, SpA of Lainate, Italy. The porous absorbing material will be described in detail later. A radiant heat source such as a quartz lamp 14 2 can be used to heat the absorption plate 1 40 for regeneration. The regeneration process is assisted by a reflector 1 4 4 (such as a polished, curved stainless steel plate). Figure 5b shows a second embodiment of the absorbing material. In this embodiment, the wall 82 "and the absorbing plate 146 are both located inside the chamber 88". The absorbing plate is approximately square and its side length is preferably between 0.5 and 1. 0. The same It is best to have a spacing of 0.05 to 0.25 inches between them, and the best is 0.1 ". However, in this example, the plate 1 4 6 is heated by a heating rod 1 4 8 The heating rod can thus support and fix the absorption plate, and can also be used as a heater in the regeneration process. The heating rod 1 4 8 is preferably a resistance heater " preferred system operation is operation The cryogenic pump / absorption pump combination of the present invention sometimes needs to be turned on. The paper size is applicable to the Chinese national standard (CNS > A4 specification (210 X 297 mm). (Please read the precautions on the back before filling this page). -------. Order i: ------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-19-406162 V. Description of the invention (17) Valve 120 (Figure 4a) or Gate valve 130 ( Figure 4b). The gate valve 1 2 0 can be removed from the flange surface 6 2 of the absorption pump 5 4 in the direction of the arrow 1 2 6 first, and then the valve 1 2 0 is directed to the right of the arrow 1 2 8 Move away from the cryopump inlet 76 and the absorption pump inlet 86. Those skilled in the art are also familiar with such a mechanism for removing the gate valve 120 or 130 from the gate valve assembly. ~ Dan gate valve 1 After 20 or 1 3 0 is turned on, both the inlet 7 6 of the cryopump and the inlet 8 6 of the absorption pump are in direct communication with the opening 5 8 of the processing chamber. This allows the cryopump 64 and the pump with enhanced hydrogen pumping function. Both absorption pumps 54 can operate normally. When under normal operation, valves 96, 102, 107, and 112 are closed. First regeneration method The following first regeneration method will refer to Figs. 2, 3, 3a, and 4a. Since the number of regenerations of the cryopump 5 2 is more frequent than that of the absorption pump 54, the regeneration of the cryopump is discussed first. As mentioned before, the main advantage of the present invention is that the cryopump 5 2 and the absorption pump 54 can be regenerated separately. So that the absorbing part 5 4 does not run out of its capacity due to excessively frequent regeneration. In order to regenerate the cryopump 5 2, the gate valve 1 2 0 must be closed as shown in FIG. 4 a. The valves 102 and 1 12 must also be closed. 》 First open the valve 10 7 so that the ultra-high purity argon gas flows into the chamber body 8 8 and crosses the side wall 6 6 The upper edge enters another chamber body 6 7 as shown by the arrow G in Fig. 4 a. Then open the valve 9 6 and drive the pump 9 2 to extract the air in the chamber body 6 7. The paper size applies the Chinese national standard ( CNS) A4 size (210 X 297 mm) (谙 Please read the precautions on the back before filling out this page) 'Packing · 11111 · Order ·'! 11 • Line I. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives -20 -406162 A7 ____B7_______ V. Description of the Invention (is) There are three main purposes for allowing argon to flow from the chamber body 8 8 into the chamber body 6 7. First, the gas flow prevents the gas generated during the regeneration of the active elements of the cryopump from flowing into the chamber body 8 8 and pollutes the active elements of the absorption pump 54. Secondly, the ultra-high purity argon can provide additional pressure in the chamber body 67, making the mechanical pump 92 operating more efficiently. This is particularly useful for preventing the backflow of contaminants from the pump 9 2 into the chamber body 6 7, which can occur, for example, when the pressure inside the chamber body 6 7 is too low. Third, this additional gas can help the heat transfer effect of the low temperature component to accelerate the regeneration process of the component. The temperature in the chamber body 6 7 can rise to about room temperature, so that the gas is absorbed by the active elements of the cryopump, such as an array of 15 ° K and 80 ° K, otherwise the gas in the chamber body 6 7 will be absorbed. Completed by pump 92. A heating mechanism (not shown) may also be provided to speed up the heating process. At the end of the regeneration cycle, all valves 96, 102, 107, and 1 1 2 will be closed and the gate valve 1 2 0 will be removed, as before. The regeneration step of the absorption pump 54 closes the gate valve element 120 in advance. The valve 107 was opened to allow the argon gas to flow into the absorption pump, and the cryopump was used as a pump to pump argon from the absorption pump. Then, ultra-high purity argon gas can flow from the chamber body 8 8 into the chamber body 67, as shown by the arrow direction G in Fig. 4a. The cryopump 5 2 is preferably maintained at a low temperature state, and the active materials 9 0 a-9 0 c can be heated to about 3 0 C by, for example, resistance coils 1 3 6 and the like. In the two embodiments of Figs. 5a and 5b, the absorption plate is heated by a quartz lamp 1 2 2 or a heating rod 1 4 8 'instead of a resistance coil 1 3 6. Insulating material located between the cryopump 5 2 and the absorption pump 5 4 The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) .-- ---- I i II! Ί Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 406162 at ___B7_____ V. Description of the invention (19) 7 8 can thermally isolate the two ' It is also possible to prevent the argon gas from flowing back into the chamber body 88 from the chamber body 67. After the regeneration cycle of the active material 9 0 a-9 0 c of the absorption pump is completed, the 'valve 96' 102 '107 and 1 12 will be closed, the pump 9 2 will stop running, and the gate valve 1 2 0 will be opened to start the combined pump 5 0 operation. It is worth noting that whenever the absorption pump is regenerated using the first method, the cryopump must also be regenerated 'because the cryopump pumps argon (and other gases released by the regeneration process of the absorption pump, etc.) from Absorption pump flows out. However, this is not a problem, because cryopumps can be regenerated more times than typical absorption pumps, and because the absorption pumps in the pump assembly need to be regenerated occasionally. In addition, cryopumps can also be regenerated simultaneously with absorption pumps. This can be done by first turning off the cryopump refrigerating unit to warm it up, and opening the valve 9 6 and driving the pump 9 2 to withdraw from the cryopump 6 7 into the cryopump compartment 6 7 Argon. This is a better method because the cryopump will quickly saturate if it is used as a pump to clean the absorption pump gas. In addition, the total reproduction time is shortened by this method. Second regeneration method Refer to Figs. 2, 3, 3a and 4b for the second regeneration method. Similarly, the regeneration process of the cryopump 52 is first discussed, and then the regeneration of the absorption pump 54 is discussed. The regeneration process of the cryopump 52 needs to close the gate valve element 130 first, as shown in FIG. 4b. When closed, the '〇-ring 1 34 prevents the chamber body 67. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------ installation ---- ---- Order ------- line (please read the precautions on the back before filling this page) -22-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 406; 16 Sha 7 _ _B7______ V. Description of the invention (20) Gas flow between 8.8 and 8.8. The temperature in the chamber body 6 7 of the cryopump 5 2 can be raised to room temperature (using a suitable heating mechanism) 1 and thus any gas absorbed by the active element can be released. The valves 102 and 107 are closed 'to open the valve 96 and drive the pump 92. The released gas will be exhausted by pump 92. The valve 1 1 2 can be slightly opened to allow ultra-high-purity argon gas to flow into the chamber body 67 to facilitate the operation of the pump 92, as described above. The second regeneration method of the absorption pump 54 is to first close the gate valve element 130, as shown in FIG. 4b. Close valves 112 and 96, open valve 102 and drive pump 92. The active element 9 0 a-9 O c can be heated to approximately 3 0 0 C using a resistance wire such as 1 3 6 (or a quartz lamp as shown in Fig. 5 a or a heating rod as shown in Fig. 5 b) to regenerate the active element. . The valve 107 can be opened to allow ultra-high purity argon gas to flow into the chamber body 8 8 to assist the operation of the pump 92. It should be noted that there are at least two methods of isolating the chamber body 6 7 of the cryopump 5 2 and the chamber body 8 8 of the absorption pump 54 in the first and second methods of regenerating the combined pump 50. First, the two chambers 6 and 8 can be isolated using the airflow G as shown in Fig. 4a or the seal ring as shown in Fig. 4b. This form of isolation prevents the active elements of other chambers from being contaminated when they are regenerated. The second isolation method is thermal isolation, which is mainly provided by a thermal insulation material 78. Other heat insulation methods, such as an air groove, a vacuum groove, or a cooling mechanism such as a water jacket. Better absorption material. The paper size is generally Zhongguanjia standard specifications. Please fill in this page for the items) Packing --------: Order i: ------- Broken -23-^ 06 ^ 62 B7 V. Description of the invention (21) As mentioned above, the invention The preferred absorption material used by the absorption pump is a porous absorption material from SAES Getters, SpA of Lainate, Italy. In short, the method of making the porous absorbent material is to first provide a metal absorbent powder mixture with a particle size of less than 70 μm; and the particle size of at least one of the absorbent alloys is less than 40 / zni. The mixture also contains an organic component that is solid at room temperature and can be completely evaporated at 300 ° C so that when the mixture is sintered, it does not leave any residue on the grains of the metal absorbing element or the absorbing alloy. In addition, the particle size distribution of the organic powder particles should be such that the content of the particle diameter is less than 50 / m and more than half of the total weight, and the remaining grain size should be between 50 em and 150 pm. The powder mixture will then withstand a pressure of less than 1000 k: g / cm2 to form a compressed powder mixture. The compressed powder mixture can be sintered at a temperature between 900 ° C. and 12 ° C. for 5 to 60 minutes. When sintered, the organic components will completely evaporate from the compressed powder mixture without leaving residues on the grains of the metal absorbing element and the absorbing alloy, so large or small pores will be formed in the absorbing material. In one embodiment, the weight ratio of the metal absorbing element to the total amount of the absorbing alloy is between 1:10 and 10: 1. In another embodiment, the weight ratio is between 1: 3 and 3: 1. In another embodiment, the powder mixture contains about 40% by weight of organic ingredients. In some embodiments, the absorption alloy contains a double or triple alloy of chromium or titanium. In a particular embodiment, the absorbing alloy is a zirconium-vanadium-iron triple alloy with a weight ratio of zirconium 70% -vanadium 24.6% -iron 5.4% 'and the metal absorbing material is zirconium. In another special embodiment, the second type of absorption alloy contains extremely strong hydrogen. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) (Jing first read the precautions on the back before filling this page) .Install --------. Tri: ------- line! Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-24-Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs iO & iQ2 _- _ B7___ V. Description of the Invention (22) Gas Absorptive Capacity In another embodiment, the second alloy It is a chromium-aluminum alloy. Furthermore, the weight ratio of the alloy is zirconium 8 4%-aluminum 1 6% »The absorption material preferably forms an absorption object suitable for the absorption pump of the present invention. In one embodiment, the absorbent body includes a flat plate, which can also be formed into a small sphere, a sheet or a disc. The flat plate is preferably capable of compressing the porous powder absorbing material into a solid form. The application of the low temperature / absorption pump is preferred. The preferred application of the combined low temperature and absorption pump of the present invention is used in integrated circuits. Furthermore, the cryogenic / absorption pump of the present invention is a part of the semiconductor wafer manufacturing equipment, such as the aforementioned P VD equipment, to significantly improve the manufacturing process of integrated circuits. The integrated circuit manufacturing process according to the present invention is to install a combined low temperature / absorption pump in more than one semiconductor integrated circuit manufacturing equipment. Therefore, this semiconductor manufacturing equipment can be combined with the low temperature / absorption pump to become one of the main steps for manufacturing integrated circuits, such as processing semiconductor wafers in a P VD machine or an ion implantation machine, both of which are sensitive to some slight hydrogen pollution. Since the cryopump / absorption pump of the present invention has the same form as the standard cryopump and can be operated in the same way, it can also be used in a standard integrated circuit manufacturing process, and a better effect can be obtained. This cryogenic / absorption pump is regenerated in the same manner as described above. Although some preferred embodiments have been described, many skilled in the art can easily make many changes, modifications, and permutations of the present invention after reading this specification and illustration. In addition, the terminology used here is only for clarity. The 7 paper sizes are applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). < Please read the notes on the back before filling out this page.) --------: Order. -25-Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 406 ^ 62 _____B7___ V. Invention description (23) is not intended to be limited. Therefore, the following patent application scope includes all changes, corrections, permutations and similar situations without departing from the spirit and scope of the present invention. Brief Description of the Figures Figure 1 is a cross-sectional view of a conventional cryopump unit combined with a processing chamber by a gate valve unit. Fig. 2 is a sectional view of the cryogenic / absorption pump combination of the present invention. Fig. 3 is a view of the cryogenic / absorption pump combination of Fig. 2 along a section 3-3; Figure 3a is a side view of a small portion of the active elements in the absorption pump. Figure 4a is a first embodiment of a gate valve element in a gate valve assembly of the present invention. Fig. 4b is a second form of the gate valve element in the gate valve assembly of the second embodiment of the present invention. Fig. 5a is a first embodiment of the absorption element of the cryogenic / absorption pump combination of the present invention. Fig. 5b is a second embodiment of the absorption element of the cryogenic / absorption pump combination of the present invention. Component comparison table 10 Cryogenic pump 12-58 opening 14'28, 67, 88, 88 '-88 " Processing chamber The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------ ------- ^ -------- 1 ^ ------- ^ (Please read the notes on the back before filling out this page) 40616 ^ B7 V. Description of the invention (2〇 Economy Printed by the Intellectual Property Bureau of the Ministry of Consumers' Cooperatives 16 6, 60 Gate valve combinations 1 8 Cylindrical housing 20, 4 3 a, 7 5 a 2 2, 3 8, 5 6 > 6 2 4, 2 6 »9 4 > 1 3 0, 3 4 shut-off valve 3 2, 9 2 mechanical pump 3 6 a — 3 6 d > 7 0 3 7, 7 2 > 7 4 cup 3 9, 7 7 radome 4 0 gate valve combination Valve body 4 1, 7 3 Cold head cylinder 4 2 Orifice 4 3 b, 7 5 b Out P 4 4, 1 2 0 > 1 3 0 4 6 Gate valve removal mechanism 4 8, 1 2 2 1 1 3 2 5 0 Combined pump 5 2 Cryogenic pump 5 4 Absorption pump part 6 9 ， 9 6 j 1 0 2 6 6 Side wall 6 8 ， 8 4 Bottom wall 7 8 Insulation material 7 6, 8 6 Inlet flange 0-110- 106 Inlet Duct-7 0 d V-shaped Plate Array Gate valve 134 Sealing ring 0 7-112 The size of this paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ I -------- Order .1 ^ ------- line (please read the notes on the back before filling this page) 4G6: I62 A7 __B7 V. Description of the invention (25) 7 9 Shell 8 0 Inner wall part 82, 82 'outside Wall part 90a — 90c, 116 Support belt 98-108 Connector 104 Ultra-high purity air source 114 Bolt hole 118 Absorbent material 12 4 External environment 13 6 Resistance coil 140, 146 Absorptive plate 144 Reflector 148 Heating rod (please read the back first (Please note this page before filling in this page) -------- Order ------------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. ) A4 size (210 X 297 mm) -28-