經濟部中央標準局員工消費合作社印製 4〇i61〇 A7 -_______B7_ 五、發明説明（i ) 本發明係有關於製造半導體元件之一種裝置與方法， 更詳细言之，是關於一種氧化裝置與一種使用該裝置以在 半導體晶圓上形成所需厚度之氧化物薄膜的方法。 第1圖是繪示一種用Μ形成習知半導體元件內之一氧 化物薄膜之方法的一幅流程圖。生長相當於欲在晶圓上形 成之一層氧化物薄膜之預定厚度的一層氧化物薄膜所需的 時間，是由步驟S 10決定，且步驟S11中，在氧化裝置内Μ 預設時間生長氧化物薄膜；而在晶圓上所生長的氧化物薄 膜之厚度是在步驟S12中使用氧化物薄膜厚度測量裝置來 測量，然後在步驟S 13中將測得的厚度與預定厚度作比較 •若在步驟S13中發現尚未達到預定厚度，則計算生長更 多氧化物薄膜所需之時間，再重覆步驟S1Q〜S12，直到 量測厚度等於預定厚度為止。 在上述形成氧化物薄膜之該傳統製程中，由於氧化裝 置本身的條件差異，使每一批次的氧化物薄膜厚度不同。 當氧化物薄膜未達到預定厚度時，必須用人工計算氧化物 薄膜的生長時間，Κ便生長所需厚度的氧化物薄膜。 而且，計算氧化物薄膜生長時間的方法可能不同，Κ 致每次的計算结果並不一致，更且每批次的结果皆必須加 Κ確認及記錄。 因此，本發明之目的即在提供一種氧化裝置*用以減 少用人工計算氧化物薄膜生長時間所造成於一批次所生長 氧化物薄膜厚度的差異。 本發明之另一目的在提供一種使用該氧化裝置Μ形成 氧化物薄膜之方法。. 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） -4 - I 裝^^ ^ ^訂 冰 (請先聞讀背面之注意事項再填寫本頁) 401610 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（2) 為完成本發明之上述第一目的，其提供一用Μ彤成半 導體元件的氧化物薄膜之裝置，其包含有：控制裝置，供 根據從操作員終端機輸入之預定厚度及測量在先前之氧化 製程中所生長氧化物薄膜的厚度，計算生長所要厚度的氧 化物薄膜所需之時間，並輸出生長該氧化物薄膜所需之時 間；氧化物薄膜生長裝置，用以接受從該控制裝置所輸出 之需求時間並Κ該所需之時間生長氧化物薄膜；Μ及氧化 物薄膜厚度測量裝置，用Μ測量在該氧化物薄膜生長裝置 中生長之氧化物薄膜的厚度，且將測得之厚度輸入給該控 制裝置。 為完成本發明之上述第二目的，其提供一用以形成半 導體元件的氧化物薄膜的方法，其包含下列步驟：a)輸入 一欲形成的氧化物薄膜之一預定厚度至一控制裝置内，及 Μ該控制装置計算生長相當於該預定厚度之一氧化物薄膜 所需之時間；b)輸入該所需時間給一個氧化物薄膜生長裝 置，然後Μ該時間生長氧化物薄膜；c)在一個氧化物薄膜 測量裝置中測量已生長的氧化物薄膜厚度，然後將測得的 厚度輸入該控制裝置；d)比較該預定厚度與該测得之厚度 *且在該控制裝置中計算生長相當於該預定厚度與該測量 得之厚度間之差異的氧化物薄膜所需之時間；及e)將步驟 d)中所計算之氧化物薄膜的生長時間輸入給該氧化物薄膜 生長裝置，然後重複步驟b)起的諸步驟直到該預定厚度相 等於所測得之厚度為止。 依據本發明的裝置及使用它形成氧化物薄膜之一方法 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ---------裝— « r (請先閱讀背面之注意事項再填寫本頁) 訂 401610 經濟部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（3) ，生長相當於所欲生長氧化物薄膜厚度預定厚度的該氧化 物薄膜所需之生長時間係被自動計算出來，因而簡化製程 及減小氧化物薄膜厚度的差異；因此，關於製程的可靠度 即增加且產品可更一致地生產。 本發明之上述目的及優點將藉由參照附圖對較佳實施 例所作的詳细說明而更加明顯*其中： 第1圖係為繪示用Μ形成傳統半導體元件中之一個氧 化物薄膜之一方法的流程圖； 第2圖係依據本發明用Μ形成半導體元件之一個氧化 物薄膜之一裝置的方塊圖；Μ及 第3圖係為繪示用Μ使用第2圖的該裝置形成一半等 體元件之一個氧化物薄膜之一方法的流程圖。 請參閲第2圖，標號3及標號4分別為氧化物薄膜生長 裝置及氧化物薄膜厚度测量裝置。 標號5係指一控制裝置，其包括用Μ儲存、比較及計 算資料之一主電腦、及一終端機2。 當無論是要生長在晶圓上的氧化物薄膜之預定厚度或 已生長在晶圓上的氧化物薄膜之被則得厚度，經由終端機 2被輸入給主要電腦1時，主電腦1計算氧化物薄膜生長至 預定厚度所需之生長時間，或在預定厚度較測得厚度時， 計算生長出相當於預定厚度與测得厚度間之差異之氧化物 薄膜所需的時間，然後將計算出的時間輸出終端機2。 生長一個氧化物薄膜所需的時間是依在該氧化物薄膜 生長裝置中重覆進行的氧化製程所獲得之氧化物薄膜生長 本纸張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） --------^---裝------： (請先閱讀背面之注意事項再填寫本頁) 訂 A7 B7 五、發明説明（4 ) 速率的儲存資科來決定*而氧化物薄膜生長裝置3從控制 裝置5接受生長所要厚度的氧化物薄膜所需之預定時間， 然後Μ該預定時間生長氧化物薄膜；隨後，氧化物薄膜厚 度測量裝置4測量氧化物簿膜的厚度，並將測得的厚度回 授給控制裝置5的主電腦1。 請參閱第3圖*用Μ生長相當於欲在晶圓上長成之氧 化物薄膜預定厚度的一個氧化物薄膜所需之時間，是在步 驟AS101中使用控制裝置5所決定，且在步驟S1Q2M該預定 時間在氧化物薄膜生長裝置3中生長氧化物薄膜；其次， 氧化物薄膜厚度測量裝置4在步驟S10 3中測量在氧化製程 中生長於晶圓上的氧化物薄膜之厚度，然後控制裝置比較 測得厚度與該預定厚度，此時，在步驟S1Q4中，控制裝置 5判定是否已經達到預定厚度，若預定厚度較測得厚度為 厚時，則重覆步驟S101〜S103。 儲存在控制裝置中用Μ計算生長氧化物薄膜所需時間 之公式如下： t=(t/ R) +lt' (1-R)] (1) ----1--.---装---i--—IT (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 t2，=t2- (皿叫,rr) (2) (皿叫2_r> (3) 本纸張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 401610 Α7 Β7 i、發明説明（5 ) 經濟部中央標準局員工消費合作社印裂 其中t是下次生長氧化物薄膜所需的時間，tl是目前這 批次的生長持續時間，ta是上一批次的生長持續時間， TOXwga及TOXav3,2是分別在伙及1；2期間生長的氧化物之 平均厚度，T是預定厚度，而61及62分別是在^及“期間 之氧化物生長速率。 其中，TOX^.i及TOXavg,2是將最大及最小之測得值 丟掉之討算值；而且*當最大資料與最小資料間的差值大 於一個預定的差距值S(s= T的χυ時，平均值T〇xavg l及 TOXavg,2即被此差距值取代；當氧化物薄膜之測得厚度的 改變很大且在使用Μ上公式計算生長氧化物薄膜之時間時 ，有可能發生製程的錯誤，因此*操作員會在幾次重覆製 程後預先決定該差距值。 依據本發明之氧化裝置及形成氧化物薄膜的方法，生 長出相當於所欲生長氧化物薄膜之預定厚度的氧化物薄膜 所需之時間，是利用具有氧化物薄膜生長裝置、氧化物薄 膜厚度測量裝置及控制裝置之該氧化裝置予Μ自動計算； 因此，操作得Μ簡化且每批次之氧化物薄膜厚度變化減至 最小，因而加強製程的可靠度且可生產更一至的產品。 應知，本發明並不限於所繪示的實施例，而热習該項 技術者可在本發明的範圍內施Μ許多變化及修改。 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ 297公釐） —---^—----^裝-- (請先閱讀背面之注意事項再填寫本頁) 訂 401610 A7 B7 五、發明説明（6 ) 元件標號對照 1 ....主電腦 2 ....操作員終端機 3 ....氧化物薄膜生長裝置 4 ....氧化物薄膜測量裝置 5 ....控制裝置 S10-13、101-103____步驟 I ^ 批衣— (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局負工消費合作社印製 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 4〇i61〇A7 -_______ B7_ V. Description of the Invention (i) The present invention relates to a device and method for manufacturing semiconductor components, and more specifically, to an oxidation device and A method for using the device to form an oxide film of a desired thickness on a semiconductor wafer. FIG. 1 is a flowchart showing a method for forming an oxide thin film in a conventional semiconductor element by using M. FIG. The time required to grow an oxide film of a predetermined thickness corresponding to the formation of an oxide film on the wafer is determined in step S10, and in step S11, the oxide is grown in the oxidation device for a preset time The thickness of the oxide film grown on the wafer is measured in step S12 using an oxide film thickness measuring device, and then the measured thickness is compared with a predetermined thickness in step S13. If it is found in S13 that the predetermined thickness has not been reached, the time required to grow more oxide thin films is calculated, and steps S1Q to S12 are repeated until the measured thickness is equal to the predetermined thickness. In this conventional process for forming an oxide thin film, the thickness of the oxide thin film is different for each batch due to the difference in the conditions of the oxidation device itself. When the oxide film does not reach a predetermined thickness, it is necessary to manually calculate the growth time of the oxide film, and K will grow the oxide film of a desired thickness. In addition, the method of calculating the oxide film growth time may be different. The results of each calculation are not consistent, and the results of each batch must be confirmed and recorded. Therefore, an object of the present invention is to provide an oxidizing device * for reducing the difference in thickness of oxide films grown in a batch due to the artificial calculation of the oxide film growth time. Another object of the present invention is to provide a method for forming an oxide film using the oxidation device M. . This paper size applies to Chinese National Standard (CNS) A4 specification (210 × 297 mm) -4-I Packing ^^ ^ ^ Ordering ice (please read the precautions on the back before filling this page) 401610 Central Bureau of Standards, Ministry of Economic Affairs Printed by employees' consumer cooperatives A7 B7 V. Description of the invention (2) In order to accomplish the above-mentioned first object of the present invention, it provides a device for forming an oxide film of a semiconductor element by using a semiconductor device, which includes: a control device for The operator inputs the predetermined thickness and measures the thickness of the oxide film grown in the previous oxidation process, calculates the time required to grow the oxide film of the desired thickness, and outputs the time required to grow the oxide film; Material film growth device for receiving the required time output from the control device and growing the oxide film at the required time; M and oxide film thickness measuring device for measuring growth in the oxide film growth device with M The thickness of the oxide film, and the measured thickness is input to the control device. In order to achieve the second object of the present invention, it provides a method for forming an oxide film of a semiconductor element, which includes the following steps: a) inputting a predetermined thickness of an oxide film to be formed into a control device, And the control device calculates the time required to grow an oxide film corresponding to the predetermined thickness; b) inputs the required time to an oxide film growth device, and then grows the oxide film at the time; c) The oxide film measurement device measures the thickness of the grown oxide film, and then inputs the measured thickness into the control device; d) compares the predetermined thickness with the measured thickness * and calculates growth in the control device equivalent to the The time required for the oxide film having the difference between the predetermined thickness and the measured thickness; and e) inputting the growth time of the oxide film calculated in step d) to the oxide film growth device, and then repeating step b ) Until the predetermined thickness is equal to the measured thickness. The device according to the present invention and a method for forming an oxide film using the same The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) --------- installation— «r (please first Read the notes on the reverse side and fill in this page) Order 401610 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (3) The growth of the oxide film is equivalent to the desired thickness of the oxide film. The required growth time is automatically calculated, thereby simplifying the process and reducing the difference in thickness of the oxide film; therefore, the reliability of the process is increased and the product can be produced more consistently. The above-mentioned objects and advantages of the present invention will be more apparent through detailed description of the preferred embodiments with reference to the drawings. * Among them: FIG. 1 is a diagram showing one of the oxide films formed in a conventional semiconductor element by using M. Method flow chart; FIG. 2 is a block diagram of a device for forming an oxide thin film of a semiconductor element by using M according to the present invention; M and FIG. 3 are diagrams showing the formation of half using M using the device of FIG. 2 etc. Flowchart of one method of an oxide thin film for a bulk element. Referring to Fig. 2, reference numerals 3 and 4 denote an oxide film growth device and an oxide film thickness measurement device, respectively. Reference numeral 5 refers to a control device including a host computer for storing, comparing, and calculating data with M, and a terminal 2. When either the predetermined thickness of the oxide film to be grown on the wafer or the thickness of the oxide film that has been grown on the wafer is input to the main computer 1 via the terminal 2, the main computer 1 calculates the oxidation The growth time required for the film to grow to a predetermined thickness, or when the predetermined thickness is greater than the measured thickness, calculate the time required to grow an oxide film equivalent to the difference between the predetermined thickness and the measured thickness, and then calculate the calculated Time output terminal 2. The time required to grow an oxide film is based on the oxide film growth obtained by the repeated oxidation process in the oxide film growth device. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). ) -------- ^ --- install ------: (Please read the notes on the back before filling out this page) Order A7 B7 V. Description of the invention (4) The rate of storage resources It is determined that the oxide film growth device 3 receives from the control device 5 a predetermined time required to grow an oxide film of a desired thickness, and then grows the oxide film at the predetermined time; subsequently, the oxide film thickness measuring device 4 measures the oxide book The thickness of the film is fed back to the host computer 1 of the control device 5. Please refer to Figure 3 * The time required to grow an oxide film with a predetermined thickness of the oxide film to be grown on the wafer with M is determined by using the control device 5 in step AS101, and in step S1Q2M The oxide film is grown in the oxide film growth device 3 at the predetermined time; secondly, the oxide film thickness measuring device 4 measures the thickness of the oxide film grown on the wafer in the oxidation process in step S103, and then controls the device The measured thickness is compared with the predetermined thickness. At this time, in step S1Q4, the control device 5 determines whether the predetermined thickness has been reached. If the predetermined thickness is thicker than the measured thickness, the steps S101 to S103 are repeated. The formula used to calculate the time required to grow the oxide film stored in the control device is as follows: t = (t / R) + lt '(1-R)] (1) ---- 1 --.---- load --- i --- IT (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs t2, = t2- (皿 called, rr) (2) (皿 called 2_r > (3) This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 401610 Α7 Β7 i. Description of the invention (5) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs where t is the next growth oxidation The time required for the thin film, tl is the growth duration of the current batch, ta is the growth duration of the previous batch, TOXwga and TOXav3, 2 are the average thickness of the oxides grown during the period of 1 and 2; 2 , T is the predetermined thickness, and 61 and 62 are the oxide growth rates during ^ and ", respectively. Among them, TOX ^ .i and TOXavg, 2 are the calculated values of discarding the maximum and minimum measured values; and * When the difference between the largest data and the smallest data is greater than a predetermined gap S (s = χυ of T, the average values T0xavg l and TOXavg, 2 are replaced by the gap value When the measured thickness of the oxide film changes greatly and the time for growing the oxide film is calculated using the formula on M, a process error may occur, so the operator will determine the gap in advance after repeating the process several times According to the oxidation device and the method for forming an oxide film of the present invention, the time required to grow an oxide film having a predetermined thickness corresponding to the desired oxide film is to use the oxide film growth device and the oxide film. The oxidizing device of the thickness measuring device and the control device is automatically calculated by M; therefore, the operation is simplified and the thickness variation of the oxide film in each batch is minimized, thereby enhancing the reliability of the process and producing more uniform products. It is known that the present invention is not limited to the illustrated embodiments, but those skilled in the art can make many changes and modifications within the scope of the present invention. This paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210 × 297) Mm) ———- ^ —---- ^ equipment-- (Please read the notes on the back before filling in this page) Order 401610 A7 B7 V. Description of the invention (6) Yuan Reference number comparison 1 ... host computer 2 ... operator terminal 3 ... oxide film growth device 4 ... oxide film measurement device 5 ... control device S10-13, 101 -103 ____ Step I ^ Approved — (Please read the precautions on the back before filling out this page) Order printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297). %)