A7A7
發明説明（ 經濟部中央標準局員工消費合作社印製 本發明係關於-種單面處理圓盤形物件例如乾式钱刻 ^曰曰圓之m裝置，該物件有—層存在於兩侧之層例如 氧化物層僅由單面去除。 本發明又係關於一種可執行本發明方法之物件。 已知濕式蝕刻裝置，使用該裝置圓盤形物件特別矽 圓以液態蝕刻介質處理而蝕刻去除圓盤形物件上存在的 層’例如矽晶圓之氧化物層。. 也已知使用氣態形式蝕刻介質蝕刻晶圓之方法及裝i (乾式餘刻）。例如石夕晶圓之氧化物層經由以氟化氫溶解於 氮氣（HF蒸氣）處理晶圓去除。 由DE 35 22 465 A已知於蝕刻攻擊之前使用去離子水 冲洗石夕BB圓可保護於底側以液態钱刻介質處理的石夕晶圓。 DE 35 22 465 A也述及環隙，但此環隙係由圓盤形元件與 支撐元件之晶圓侧端的幾何尺寸決定。已知裝置中，晶圓 經由對支撐元件分別施加負壓牢固固定。 本發明之目的係針對一種方法及執行該方法之裝置， 其可確保作用於圓盤形物件單面的處理不會作用於不欲處 理的物件另一侧，或不會以未經控制的方式如此進行。 根據本發明，此種目的可以具有申請專利範圍第 所述特點之方法達成。 本發明又係關於一種裝置，其較佳用於實施本發明 方法且具有裝置之申請專利範圍主項所述特點。 本發明方法及本發明裝置之較佳及優異構造構成附 曰曰 置 1項 之 屬 (請先閱讀背面乏注意事項再填寫本頁) -----^丨勢裝------'玎--- ___- 表紙張尺度適用中剛家標隼（CNS ) A4規格（210X297讀）-5 - Λ7 B7 經濟部t央標準局員工消費合作社印製 五、發明説明（2 項的目的。 丨卞例如矽晶圓表 面吹送氣態惰性介質，故氣態處理介質可靠的防止r矿 控制方式作用於不欲處理的圓盤形物件表 例如超出緣 區。 本發明方法及本發明裝置之其它細節及特點由後Μ 明參照附圖將顯然易明。附圖中：第i圖為顯示適人實施 本發明方法之裝置之示意軸向..剖面圖； —一一 口—一Κ圖顯..正固持圓 盤形物件之板益視IL及及顿|㈣—個具體例: 雖然後文係參照於石夕晶圓上钱刻去除氧化物說明，但 本發明非僅限於此種樣本用途。但此種用途為較佳。 第1圖顯示之裝置包含一個下端開放殼體1，附有一個 蓋壁2及側壁3例如設計為鈐形。殼體以方有個聯接件*供 供應氣態處理介質例如乾式兹刻介質（例如敦化氫溶解於 氮氣）至由殼體1封住的處理腔室5。待處理物件物如石夕晶 圓之固持板7以可卸式連結至蓋形殼體1側壁3之自由緣6。 /固持本7具有凹部9，其中供應氣態介質的管1〇結束於 待去除之層’例如待於石夕晶圓去除之氧化物層不具有任何 兹刻作用，亦即就此方面而言為情性。例如此種氣體可為 氮氣。 根據本發明裝置之具體例（未顯示）中，該裝置適合同 夺處里數個圓盤形物件8，此處可於金屬板7設置若干凹部 各個凹。9結合一根官！ 〇 ,經此管氣態惰性介供 本紙張尺度適用中 (請先閱讀背面之注意事項再填寫本頁) 裝---- 訂------ Λ7 B7 五、發明説明（3 ) 至凹部9。 數根較佳四根鎖U於固持板7向上突起包圍凹部9及包 圍固持板7之待處理圓盤形物件8將放置區。凹部區9外侧 及銷11外侧及第1及2圖所示具體例中，設置若干抽取口 η 包圍凹部9供去除經由管i 〇供應的氣態钱刻介質及氣態惰 丨w貝b第2圖所不的抽取口 12例如可具有孤形開缝外 形。第1及2圖所示具體例，較佳用於圓盤形物件8之面對 固持板7該側i 3將完全保護不受處理介f作用的情況。 第3及4圖所示根據本發明裝置之具體例，特別可用於 圓盤形物件8面對固持板7該側緣區將以控制方式暴露於處 理介質作用的情況。例如當使用第3及4圖所示具體例時， 底側13緣區界定的氧化物層可藉银刻由石夕晶圓去除。第3 及4圖所示具體例與第⑴圖之區別為，抽取⑽係設置 於固持板7由圓盤形物件8邊緣疊置該區。 經濟部中央標準局員工消費合作社印m 使用裝置時，待處理物件8例如石夕晶圓之表面Μ絲毫 也未接觸處理介質例如n2+ HF(_若使用第⑷圖之具 體例）或僅於界定的緣區内部接觸，如此不會祕刻或不 會以未經控制方式钱刻，待處理物件面向下置於固持板7 之凹部9區，凹部設置於固持板有鎖u向上突起之該區内 部。 若氣態惰性氣體例如氮氣經管1〇吹送至固持板7之凹 部9，則物件8緣14經由吹送氣態介質由凹部9緣15，亦即 由固持板7上側略微升高，因而形成環㈣，及懸吊於固 本紙張尺度適用中國國冬標準（CNS ) A4規格（21〇χ297公| ) Α7 Β7 五、發明説明（4 ) 經濟部卡央棣準局員工消費合作社印製DESCRIPTION OF THE INVENTION (Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economics. The present invention relates to a single-sided processing of a disc-shaped object such as a dry money engraving device, which has a layer that exists on both sides of the layer, such as The oxide layer is only removed on one side. The invention is also related to an object that can perform the method of the invention. A wet etching device is known, using which a disk-shaped object, especially a silicon wafer, is treated with a liquid etching medium to remove the disk by etching. Layers such as the oxide layer of a silicon wafer on a shaped object. A method and a method for dry etching of a wafer using a gaseous etching medium are also known. Hydrogen fluoride is dissolved in nitrogen (HF vapor) to process wafer removal. It is known from DE 35 22 465 A that the stone BB circle was washed with deionized water before the etching attack. It can protect the stone XI wafer processed with liquid money engraving medium on the bottom side. DE 35 22 465 A also refers to the ring gap, but this ring gap is determined by the geometry of the wafer-side end of the disc-shaped element and the supporting element. In known devices, the wafer is negatively applied to the supporting element. The object of the present invention is directed to a method and a device for performing the method, which can ensure that the treatment applied to one side of a disc-shaped object will not affect the other side of an object that is not intended to be processed, or will not The control mode is carried out in this way. According to the present invention, such an object can be achieved by a method having the characteristics described in the scope of patent application. The present invention is also related to a device which is preferably used to implement the method of the present invention and has the patent application scope of the device Features described in the main item. The method of the present invention and the structure of the device of the present invention are excellent and excellent. Attached is a genus (please read the note on the back before filling this page) ----- ^ 丨------ '玎 --- ___- The paper size is applicable to Zhonggang Standard 隼 (CNS) A4 specification (read 210X297) -5-Λ7 B7 Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Explanation (The purpose of item 2.) For example, if a gaseous inert medium is blown on the surface of a silicon wafer, the gaseous processing medium reliably prevents the ore control method from acting on a disc-shaped object table that is not to be processed, such as beyond the marginal area. Other details and features of the device of the present invention will be apparent from the following description with reference to the drawings. In the drawings: Figure i is a schematic axial cross-sectional view showing a device suitable for implementing the method of the present invention. —One K-picture .. The plate is holding the disc-shaped object Yi Yi IL and 顿 | ㈣ — a specific example: Although the following is referred to the description of the oxide engraving on the Shi Xi wafer to remove oxides, the present invention is not It is limited to this sample use only. However, this use is better. The device shown in Fig. 1 includes an open lower housing 1 with a cover wall 2 and a side wall 3, for example, designed in a 钤 shape. The coupling piece * supplies a gaseous processing medium such as a dry etching medium (for example, hydrogenated hydrogen is dissolved in nitrogen) to the processing chamber 5 enclosed by the casing 1. The object to be processed is, for example, Shi Xijing, the circular holding plate 7 is detachably connected to the free edge 6 of the side wall 3 of the lid-shaped casing 1. / Holder 7 has a recess 9 in which the tube 10 supplying the gaseous medium ends in the layer to be removed, for example, the oxide layer to be removed on the Shixi wafer does not have any immediate effect, that is to say, it is in this respect. Sex. This gas may be, for example, nitrogen. According to a specific example (not shown) of the device according to the present invention, the device is suitable for capturing a plurality of disc-shaped objects 8 in the same place. Here, a plurality of recesses may be provided on the metal plate 7 and each recess. 9 combine one officer! 〇The gaseous inertness of this tube is used for the standard application of this paper (please read the precautions on the back before filling this page). ---- Order ------ Λ7 B7 V. Description of the invention (3) to the recess 9. A plurality of preferably four locks U project upward from the holding plate 7 to surround the recessed portion 9 and the disc-shaped object 8 surrounding the holding plate 7 to be placed. In the specific example shown in the outside of the recessed area 9 and the pin 11 and in Figures 1 and 2, a plurality of extraction openings η are provided to surround the recessed portion 9 for removing the gaseous money engraving medium and gaseous inertia supplied through the tube i 0. Figure 2 The extraction opening 12 may have, for example, an open-shaped slotted shape. The specific examples shown in FIGS. 1 and 2 are preferably used when the side i 3 of the disc-shaped object 8 facing the holding plate 7 will be completely protected from the action of the processing medium f. The specific examples of the device according to the present invention shown in Figs. 3 and 4 are particularly applicable when the disc-shaped object 8 faces the holding plate 7 and the side edge region will be exposed to the processing medium in a controlled manner. For example, when the specific examples shown in FIGS. 3 and 4 are used, the oxide layer defined by the bottom 13 edge region can be removed from the Shi Xi wafer by silver engraving. The specific examples shown in FIGS. 3 and 4 are different from those in FIG. 1 in that the extraction coils are arranged on the holding plate 7 and the area is superposed by the edge of the disc-shaped object 8. Employees of the Central Standards Bureau of the Ministry of Economic Affairs, the Consumer Cooperative Cooperative, used the device, and the objects 8 to be processed, such as the surface of Shi Xiwa, did not touch the processing medium such as n2 + HF (_if the specific example in the figure) is used or only defined The inner edge of the holding plate is in contact so that it will not be engraved or carved in an uncontrolled manner. The object to be processed is placed face down in the recessed area 9 of the holding plate 7, and the recess is provided in the area of the holding plate with the lock u protruding upward. internal. If a gaseous inert gas such as nitrogen is blown through the tube 10 to the recessed portion 9 of the holding plate 7, the edge 14 of the object 8 is raised from the edge 15 of the recessed portion 9 by blowing the gaseous medium, that is, slightly raised from the upper side of the holding plate 7, thereby forming a ring. Hanging on the solid paper scale Applicable to China National Winter Standard (CNS) A4 specification (21〇χ297 公 |) Α7 Β7 V. Description of the invention (4) Printed by the Employees' Cooperatives of the Card Central Bureau of the Ministry of Economic Affairs
持板7上方的圓盤形物件8之底侧13以氣態惰性介質沖洗。 氣態蝕刻介質例如N2 + HF經連結至蓋形殼體1的管4引進 ，使物件8之遠離固持板7該側2〇被蝕刻，例如蝕刻去除設 置於矽晶圓上的氧化物層。 因氣態惰性介質經由介於由固持板7略微升高的物件8 與固持板7頂側21間的喷嘴狀環隙16流出，故可確保氣態 蝕刻介質絲毫也不會到達物件8底側〗3 (特別使用第丨及2圖 之具體例％)’或氣態蝕刻介質僅作用於圓盤形物件8面對 固持板7該侧13之仔細界定緣（特別使用第3及4圖之具體例） ’故可以界定方式進行蝕刻。 ‘ 於喷嘴狀環隙16該區，環隙於向上方向由物件8之緣14 及於向下方向由凹部9之緣15倡限於固持板7,當惰性氣體 經環隙16流出時產生柏謹力（Be_⑴)效應，故無需其它 努力’圓盤形物件8可保持被惰性氣體吹離固持板7,即使 懸吊於固持板上亦如此。 蝕刻物件8頂側20之氣態兹刻介質及沖洗物件8底側η 之氣態惰性介質經由設置於固持板7凹部9周圍的抽取口η 由處理腔室5排放。 一旦银刻過程完成，處理腔室5以惰性氣態介質例如 純氮沖洗’ __板7由蓋形殼體丨移出，例如直上方放 置另-個待處理物件8的另一片固持板7移進蓋形殼體！内 定位，而可進行另一次蝕刻過程。 總結而言，本發明之較佳具體例說明如 (請先閣讀背面-之注意事項再填寫本頁) .ΙΓ裝------訂—: 本紙張尺度適用中國國家標準 I n - -I II ί I , I _ . 〇 — A7 —-------------B7 五、發明説明（5 ) 供於乾式蝕刻法單面蝕刻矽晶圓8，提供一種裝置， 其係由待#财晶圓8之蓋形殼體丨及搭接於殼體的固持板 7組成。蓋形殼體1及搭接於殼體的固持板7包圍一個處理 腔室5 ’腔室内引進具有蝕刻作用的氣態介質例如氮與氟 化氫混合物。固持板7中有個凹部9，環繞凹部設置矽晶圓 8及固持銷11及抽取口12俾由處理腔室5去除氣體。待處理 石夕晶圓8以其待餘刻面20向上置㈣持板7上，對於待藉钱 刻去除該層呈惰性的氣態介質引進固持板7之凹部9。結果 石夕晶圓8由固持板7凹部9邊緣15升高，因此形成一個環隙μ ，由此間隙，氣態介質可介於固持板7與矽晶圓8間流出。 吹廷入處理腔室5的蝕刻介質沖洗矽晶圓面對固持板7之表 面，無法到達矽晶圓8面對固持板7之表面13，或無法以非 控制之方式如此進行，原因為經由矽晶圓與固持板7間之 裱隙16送出的情性氣體也可防止矽晶圓8緣區之下方蝕刻 或僅於經界定的緣區進行。 (請先閱讀背面之注意事項再填寫本頁j ·.装--------訂---.. 經濟部中央標準局員工消費合作社印製 準 標 一家 -國 一國 I中 用 i適 張 ^ I本 A7 經濟部中央標準局員工消費合作社印製 396448 五、發明説明（6 ) 元件標號對照 1.. .殼體 2.. .蓋壁 3.. .侧壁 4.. .聯接件 5.. .處理腔室 6.. .自由緣 7.. .固持板 8…物件 9. ··凹部 10. ··管 11.. .銷 12.. .抽取開口 13.. .底侧 14.. .緣 15.. .緣. 16.. .環隙 20.. .側 本紙張尺度適用中國國家標準（CNS ) A4規格（2I0X297公釐）_ (讀先閱讀背面.之注意事項再填寫本頁)The bottom side 13 of the disc-shaped object 8 above the holding plate 7 is rinsed with a gaseous inert medium. A gaseous etching medium such as N2 + HF is introduced through the tube 4 connected to the lid-shaped housing 1, so that the side 20 of the object 8 away from the holding plate 7 is etched, such as by etching to remove the oxide layer provided on the silicon wafer. Since the gaseous inert medium flows out through the nozzle-shaped annular gap 16 between the object 8 slightly raised from the holding plate 7 and the top side 21 of the holding plate 7, it can be ensured that the gaseous etching medium will not reach the bottom side of the object 8 at all. 3 (Special examples in Figs. 丨 and 2 are used in particular.) Or gaseous etching media only act on the carefully defined edges of the disc-shaped object 8 facing the side 13 of the holding plate 7 (specific examples in Figs. 3 and 4 are used) 'Therefore, etching can be defined in a defined manner. '' In the area of the nozzle-shaped annular gap 16, the annular gap is limited by the edge 14 of the object 8 in the upward direction and the edge 15 of the recess 9 in the downward direction. It is limited to the holding plate 7. The force (Be_⑴) effect, so no additional effort is needed. The disc-shaped object 8 can be kept blown away from the holding plate 7 by an inert gas, even when suspended from the holding plate. The gaseous etching medium on the top side 20 of the etching object 8 and the gaseous inert medium on the bottom side η of the washing object 8 are discharged from the processing chamber 5 through the extraction port η provided around the recess 9 of the holding plate 7. Once the silver engraving process is completed, the processing chamber 5 is flushed with an inert gaseous medium such as pure nitrogen. The __plate 7 is removed from the lid-shaped housing, for example, another holding plate 7 is placed directly above another to-be-processed object 8 and moved into Cover-shaped housing! Positioning, and another etching process can be performed. In summary, the preferred specific examples of the present invention are described as follows (please read the precautions on the back-then fill in this page). ΙΓ 装 ———— 订 —: This paper size applies the Chinese national standard I n- -I II ί I, I _. 〇— A7 —------------- B7 V. Description of the invention (5) For dry etching single-sided etching of silicon wafer 8 to provide a device It is composed of a cover-shaped case 丨 of the to-be-finished wafer 8 and a holding plate 7 overlapped with the case. A cover-shaped case 1 and a holding plate 7 overlapping the case surround a processing chamber 5 '. A gaseous medium having an etching effect such as a mixture of nitrogen and hydrogen fluoride is introduced into the chamber. The holding plate 7 has a recessed portion 9, and a silicon wafer 8, a holding pin 11 and an extraction port 12 俾 are disposed around the recessed portion to remove gas from the processing chamber 5. The to-be-processed Shi Xi wafer 8 is placed on the holding plate 7 with its remaining facet 20 upward, and the recessed portion 9 of the holding plate 7 is introduced for the money to be borrowed to remove the layer of inert gaseous medium. As a result, the Shi Xi wafer 8 is raised from the edge 15 of the recessed portion 9 of the holding plate 7, thereby forming an annular gap μ. From this gap, a gaseous medium can flow between the holding plate 7 and the silicon wafer 8. The etching medium blown into the processing chamber 5 flushes the surface of the silicon wafer facing the holding plate 7, cannot reach the surface 13 of the silicon wafer 8 facing the holding plate 7, or cannot do so in an uncontrolled manner, because The emotional gas sent by the mounting gap 16 between the silicon wafer and the holding plate 7 can also prevent the etching under the edge region of the silicon wafer 8 or only in the defined edge region. (Please read the precautions on the back before filling in this page. J .. Install -------- Order --- .. Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. i ^ ^ I this A7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 396448 V. Description of the invention (6) Comparison of component numbers 1.... Housing 2.... Cover wall 3.... Couplings 5.... Processing chamber 6.. Free edge 7.... Holder 8................... Side 14 ... Edge 15 ... Edge 16 ... Ring gap 20 ... The paper size of this side applies the Chinese National Standard (CNS) A4 specification (2I0X297 mm) _ (Read first, read the back. Note (Fill in this page again)