A7 B? 五、發明説明（1) 【發明所雇之技術領域】 本發明係關於利用上拉法（Pulling method或稱Cz-ochralski method)來製造半導體、電介質材料、磁性體 等各種結晶材料時之裝置以及方法。 【先前技術】 關於半導體、電介質材料、磁性體等各種結晶材料， 近年來係有例如：矽、化合物半導體或者以鈮酸鋰等爲首 的氧化物單結晶正被研究開發中，可作爲髙度功能性材料 ，在於電子或者光《技術領域中，正在不斷地實用化當中 ，也愈發唐於重要的功能角色。 以往這些結晶材料係廣泛地利用上拉法（簡稱C Z法 )來製作棒狀單結晶。 一般而言，利用道種上拉法進行結晶成長的話，除了 原本包含在於原料中的成份之外，用來收容該結晶成長用 原料的坩鍋例如：石英坩鍋的構成成份（例如氧成份）也 會混入到所製得的結晶之中。 混入到這種結晶中的不純物的量，會因爲"上拉時的 結晶的迴轉數"、“坩鍋的迴轉數（旋轉速度）”、“原 料熔融液中的溫度分佈”等因素而受到影響•道是因爲結 晶的迴轉數會影響熔融液中的對流，坩鍋的迴轉數會影響 熔融液中的對流及熔融液中的氧氣濃度本身，原料熔融液 中的溫度分佈會影響熔融液中的對流所造成的·因此，藉 由控制這些影響因素係可就不純物濃度進行某些程度的調 本紙張尺度適用中國國家標準（CNS )八4規格（210X29D>^ ) (誚尤閲讀背而之注意事項再^寫本頁) -装. 訂 經漪部中央標準局負工消費合作社印製 -4 _ 經濟部中央橾準局貝工消費合作社印製 Λ7 _____B7五、發明説明（） 2 整。 但是，要控制原料熔融液中的對流較爲困難，如果僅 就上述因素進行控制的話，仍嫌不足•因此，爲了要控制 原料熔融液中的對流，乃有人開發出：在於上拉法的過程 中，對於用以孕育該單結晶之結晶成長用熔融液施加磁場 ，再將單結晶予以上拉之方法（以下簡稱MCZ法）。 利用道種方法所製造的單結晶，較之傅統的上拉法（ 以下簡稱CZ法）的單結晶，除了可更大範圃且更佳良好 精度地控制結晶中的不純物的濃度（例如氧的澳度）之外 ,更可以改善“發生渦流狀缺陷”或“發生結晶成長斑紋 ”等不良現象。這是因爲像矽這種原料熔融液係具有導電 性，藉由施加磁場可以提髙熔融液的實效粘度，可抑制熔 融液中的熱對流之緣故· 另一方面，以半導髖爲首的裝置元件，因爲不斷地髙 精度化、高集成化等因索，對於單結晶材料的要求也有愈 來愈嚴格之趨勢•即使就結晶中的不純物濃度例如半導體 矽單晶中的氧成份而言，因其澳度以及分佈狀態的不同， 將對於所製得的半導體元件的特性造成很大的影響*亦即 ，氧濃度太高的話，會產生結晶缺陷或氧的析出物，將對 半導髖元件的特性造成各種不良影響•然而，如果讓這些 結晶缺陷、氧析出物發生在半導體元件的活性領域以外的 話，反而會具有"可作爲專門吸收重金屬不純物之吸收部 ”的作用，而可以提昇半導體元件的特性（極限吸氣作用 ;intrinsic gettering) ·因此，即使氧濃度太低也無 請 先 聞 面 之 注A7 B? 5. Description of the invention (1) [Technical field employed by the invention] The present invention relates to the use of the Pulling method (Cz-ochralski method) to manufacture various crystalline materials such as semiconductors, dielectric materials, and magnetic materials. Device and method. [Prior technology] Regarding various crystalline materials such as semiconductors, dielectric materials, and magnetic materials, in recent years, there are, for example, silicon, compound semiconductors, or oxide single crystals such as lithium niobate, which are currently being researched and developed, and can be used as a substrate. Functional materials, in the field of electronics or light, are constantly being put into practical use, and they are becoming more and more important in important functional roles. In the past, these crystal materials have been widely used to produce rod-shaped single crystals by a pull-up method (abbreviated as CZ method). Generally speaking, if crystal growth is carried out by the pull-up method, in addition to the components originally contained in the raw material, the crucible used to contain the raw material for crystal growth, such as the constituents of a quartz crucible (such as the oxygen component) It will also be mixed into the obtained crystals. The amount of impurities that are mixed into such crystals depends on factors such as "the number of crystal revolutions during pull-up", "the number of revolutions of the crucible (rotation speed)", "temperature distribution in the molten raw material", and other factors. Affected • The reason is that the number of crystal rotations affects the convection in the melt. The number of revolutions in the crucible affects the convection in the melt and the oxygen concentration in the melt itself. The temperature distribution in the melt of the raw material affects the melt. Caused by convection in the medium. Therefore, by controlling these influencing factors, it is possible to adjust the impurity concentration to some extent. The paper size is applicable to China National Standard (CNS) 8-4 specification (210X29D > ^). (Notes on this page again ^ write this page)-Packing. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Consumers' Cooperatives-4 _ Printed by the Central Consumers' Bureau of the Ministry of Economic Affairs, printed by the Shellfish Consumers' Cooperatives . However, it is difficult to control the convection in the raw material melt. It is still insufficient if only the above factors are controlled. Therefore, in order to control the convection in the raw material melt, some people have developed: it is the process of the pull-up method. In the method, a method for applying a magnetic field to a crystal growth melt for incubating the single crystal, and then pulling up the single crystal (hereinafter referred to as the MCZ method). Compared with the single crystal produced by the conventional pull-up method (hereinafter referred to as the CZ method), the single crystal produced by this method can control the concentration of impurities (such as oxygen) in the crystal with a larger range and better accuracy. In addition, it can also improve the bad phenomena such as "the occurrence of vortex-like defects" or "the occurrence of crystalline growth spots". This is because a raw material melt such as silicon is electrically conductive. The effective viscosity of the melt can be increased by applying a magnetic field, and thermal convection in the melt can be suppressed. On the other hand, semiconducting hips Because of the increasing demand for precision and high integration of device elements, the requirements for single-crystal materials are becoming more and more strict. Even with the concentration of impurities in crystals, such as the oxygen content of semiconductor silicon single crystals, Due to the difference in degree and distribution, it will have a great impact on the characteristics of the semiconductor device produced. * That is, if the oxygen concentration is too high, crystal defects or oxygen precipitates will be generated, which will affect the semiconducting hips. Device characteristics cause various adverse effects. However, if these crystal defects and oxygen precipitates occur outside the active area of a semiconductor device, they will have the function of " can be used as an absorption part that specifically absorbs heavy metal impurities, "and can be improved. Characteristics of semiconductor devices (intrinsic gettering) · Therefore, even if the oxygen concentration is too low, please read it first Note
I 頁 訂 線 本紙張尺度適用中國國家梯準（CNS ) A4規格（2丨0X297公釐） 5 A7 B7 五、發明説明（3) 法提昇裝置元件之特性· 因此，各種結晶材料乃係根據該目的裝置（元件）的 不同，而被要求具有不多不少之逋置的目的不純物，所以 可容許的濃度之規格也明顯地變的很窄•如果想要達成道 種髙精密地控制結晶中的不純物濃度且符合規格的話，單 僅使用上述MCZ法的話，就目前的現況而言，仍無法回 應道種高度的要求· 【發明所欲解決之課題】 本發明係有鑑於道種問題點而進行開發完成的，其目 的在於提供：不僅可利用MC Z法進行控制對流，亦可髙 精度地控制其他方面的因素，亦即收容原料熔融液的坩鍋 之迴轉數（旋轉速度）之裝置，以及更髙精度地控制所育 成的結晶中的不純物濃度· 【用以解決課題之手段】 經濟部中央標準局負工消费合作社印製 本發明的要旨，係就具備有：供收容原料熔融液的坩 鍋、及從上述熔融液將結晶上拉之機構、及令上述坩鍋旋 轉之機構之利用上拉法作業之結晶製造裝置，其特撤爲： 在於令上述坩鍋旋轉之機構中使用變速裝置•此外，亦針 對於具備有：供收容原料熔融液的坩鍋、及從上述熔融液 將結晶上拉之機構、及對於上述原料熔融液施加預定方向 的靜磁場之機構、及令上述坩鍋旋轉之機構之利用上拉法 作業之結晶製造裝置，其特撤爲：在於令上述坩鍋旋轉之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -6 - 經濟部中央標準局貝工消費合作社印裝 A7 B7 1 I·1 !__， mw.w^ m^<m· ι ι ill ' ι !!! ι '..t-,-m ·~'^ ···· 五、發明説明（4) 機構中使用變速裝置•此外，邇有使用這些結晶製造裝置 將上述坩鍋的旋轉精度控制在小於±0 . 0 2 r pm之方 法；以及將上述坩鍋的旋轉精度控制保持在小於 土0 . 0 2 r pm的狀態下製造結晶之方法· 以下，試舉出利用MCZ法從矽熔融液來製造半導體 矽單晶之情況來詳細敘述本發明，然而本發明並不僅只侷 限於這些敘述情況· 利用CZ法、MCZ法製造矽單晶時，一般係使用石 英坩鍋作爲收容原料之坩鍋•因此，石英的構成成份之一 的氧成份就會混入到成長出來的結晶中，而必須髙精密度 地控制這種氧濃度。 根據本發明人等的調査得知：即使利用MCZ法進行控 制矽熔融液中的對流，矽結晶中的氧濃度，在於結晶間、 製造裝置間仍有很大的偏差分佈•亦即，本發明人等先將 所施加的磁場保持於一定，且將其他可影響原料熔融液中 的溫度分佈之因索也保持於一定，然後只改變坩鍋迴轉數 並進行測試的結果，獲得如第3圖所示的結果。 根據此一結果，本發明人等即推測出下列事項： (1) 熔融液中的對流受到抑制之MCZ法中，影響氧 漉度的變動之主要因數係由坩鍋迴轉數所支配，因此，只 要坩鍋迴轉數稍許的變動或誤差，就會大幅地影響氧濃度 〇 (2) 因爲氧澳度的分佈偏差，在於坩鍋的低迴轉 數領域時較大，所以推測是用來令坩鍋轉動的馬達的旋轉 本紙張尺度適用中國國家榡準（CNS ) Λ4規格（210χ2^Τϋ1 (誚先閲讀背面之注意事項再4/&本頁) — 衣 、1Τ -7 - 經满部中央標準局員工消費合作社印策 A7 ΙΠ 五、發明説明（5) 精度上存有問題· 換言之，對於原料熔融液施加水平磁場的MCZ法中 ，熔融液中的對流受到抑制，所以製造出來的矽單晶的氧 濃度受到坩鍋的迴轉速度所左右*因此，只要坩鍋迴轉速 度的些微誤差、變動都會大爲影響氧濃度•因此，在 M C Z法中有特別髙精度地控制坩鍋迴轉數的必要。 是以，本發明人等首先發現到在於今後的CZ法、尤 其是MCZ法中，如果使用傅統的結晶裝置中的坩鍋旋轉 機構的話，其精度並不足，於是便著手於提髙其迴轉精度 乃至於完成本發明· 傳統的CZ法、MCZ法的結晶製造裝置中所使用的 供以轉動坩鍋的機構並不具變速裝置，只利用一個伺服馬 達來進行控制對於其所設定的最高迴轉數爲止的整個領域 的所有轉速•因此，傅統的CZ法、MCZ法的結晶製造 裝置中，通常其最髙的坩鍋迴轉數爲2 0〜5 0 r pm, 一般的伺服馬達即可充分地控制之緣故· 但是，通常馬達的迴轉精度係取決於對於最髙轉數的 精度，轉數愈高其精度愈佳，轉數低的話，精度變差•換 言之，通常馬達的迴轉精度係以相對於最髙迴轉數的迴轉 誤差（±%)來表示，由這種迴轉誤差所計算出來的迴轉 變動（土 rpm)係存在於整個迴轉速度領域•因此，可以 認爲坩鍋迴轉精度与迴榑變動X減速比，而在於迴轉數較 低的領域的精度較差* 因此，便想到：如果要在所需的坩鍋迴轉數整個領域 本紙張尺度適用中國國家標车（CNS ) /\4圯枋（) (誚先閲讀背而之注意事項再^?r本頁) "I Page Alignment This paper size is applicable to China National Standard (CNS) A4 specification (2 丨 0X297mm) 5 A7 B7 V. Description of the invention (3) Method to improve the characteristics of device components · Therefore, various crystalline materials are based on The target device (element) is different, and it is required to have no more or less target impurities. Therefore, the allowable concentration specification is also significantly narrowed. • If you want to achieve precise control of crystals, If the concentration of impurities is within the specified range and the above-mentioned MCZ method is used, the current state of affairs cannot respond to the high requirements of the road. [Questions to be solved by the invention] The present invention is based on the problems of the road. The development is completed, and its purpose is to provide a device that can not only use the MC Z method to control convection, but also accurately control other factors, that is, the number of revolutions (rotational speed) of the crucible containing the raw material melt. And more precisely control the concentration of impurities in the bred crystals. [Method to solve the problem] Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The gist of the present invention includes a crucible for containing a molten material of the raw material, a mechanism for pulling crystals from the molten liquid, and a crystal manufacturing apparatus using a pull-up method for rotating the crucible. The special removal is as follows: a gear shifting device is used in the mechanism for rotating the crucible; in addition, it is also provided with a crucible for storing the molten material of the raw material, a mechanism for pulling crystals from the molten liquid, and The mechanism for applying the static magnetic field of the raw material molten liquid in a predetermined direction, and the crystal manufacturing device using the pull-up operation for the mechanism that rotates the crucible, the special removal is that the paper size for rotating the crucible applies the Chinese national standard (CNS) A4 specifications (210X297 mm) -6-Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 1 I · 1! __, mw.w ^ m ^ < m · ι ι ill 'ι !! ι '..t-,-m · ~' ^ ···· V. Description of the invention (4) Gear shifting device is used in the mechanism • In addition, these crystal manufacturing devices are used to control the accuracy of the crucible's rotation to less than ± 0. 0 2 r pm; and The method for manufacturing crystals under the control of the crucible's rotation accuracy is kept below 0. 0 2 r pm. · The present invention will be described in detail below by using the MCZ method to produce a semiconductor silicon single crystal from a silicon melt. However, the present invention is not limited to these narratives. When silicon single crystals are manufactured by the CZ method or the MCZ method, a quartz crucible is generally used as a crucible containing the raw materials. Therefore, the oxygen component of one of the constituent components of quartz is It will be mixed into the growing crystal, and this oxygen concentration must be controlled precisely. According to the investigation by the inventors, even if the convection in the silicon melt is controlled by the MCZ method, the oxygen concentration in the silicon crystals still has a large deviation distribution between the crystals and the manufacturing equipment. That is, the present invention People and others first kept the applied magnetic field constant, and also kept other factors that could affect the temperature distribution in the raw material melt, and then only changed the number of crucible rotations and tested the results, as shown in Figure 3 Results shown. Based on this result, the present inventors have speculated the following: (1) In the MCZ method in which convection in the melt is suppressed, the main factor affecting the change in the oxygen density is governed by the number of revolutions of the crucible. Therefore, A slight change or error in the number of revolutions of the crucible will greatly affect the oxygen concentration. (2) Because the deviation of the distribution of oxygen degrees is large in the field of low revolutions of the crucible, it is presumed to make the crucible The rotation of the rotating motor This paper size is applicable to China National Standards (CNS) Λ4 specifications (210x2 ^ Τϋ1 (read the precautions on the back first and then 4 / & this page) — clothing, 1T -7-full standard Employees' Cooperative of the Bureau of Printing Co., Ltd. A7 ΙΠ 5. Explanation of the invention (5) There is a problem with accuracy · In other words, in the MCZ method in which a horizontal magnetic field is applied to the raw melt, the convection in the melt is suppressed, so the silicon single crystal produced The oxygen concentration of the crucible is controlled by the rotation speed of the crucible. Therefore, as long as a slight error or fluctuation in the crucible rotation speed greatly affects the oxygen concentration, therefore, the MCZ method has a particularly precise control of the crucible. Therefore, the inventors first found out that in the future CZ method, especially the MCZ method, if the crucible rotation mechanism in the Futong crystallizer is used, the accuracy is not sufficient, so they proceed. In order to improve the rotation accuracy, even the present invention is completed. The mechanism for rotating the crucible used in the traditional CZ method and MCZ method crystal manufacturing equipment does not have a speed change device. It only uses a servo motor to control the All rotation speeds in the entire field up to the set maximum number of revolutions. Therefore, in the crystal manufacturing equipment of CZ method and MCZ method of Fu Tong, the maximum number of crucible rotations is usually 20 to 50 r pm. The reason that the motor can be fully controlled. However, the rotation accuracy of the motor generally depends on the accuracy of the maximum number of revolutions. The higher the number of revolutions, the better the accuracy. If the number of revolutions is low, the accuracy is worse. In other words, the motor The rotation accuracy is expressed by the rotation error (±%) relative to the maximum number of rotations. The rotation variation (soil rpm) calculated from this rotation error exists in the entire rotation speed Domain • Therefore, it can be considered that the crucible rotation accuracy and the fluctuation X reduction ratio are poor, and the accuracy is lower in the area with a lower number of revolutions * Therefore, I thought: Standards apply to China National Standard Vehicle (CNS) / \ 4 圯 枋 () (诮 read the precautions before reading ^? R this page) "
、1T -8 - 經消部中央標率局貝工消費合作社印裝 Μ Β7 五、發明説明（6 ) 均提髙其迴轉精度的話，使用變速裝置進行馬達/坩鍋軸 之間的減速比之切換，以分割迴轉領域來進行控制之方法 將會很有效* 此處所稱的“變速裝置”係指：可對於具一定迴轉數 的原軸（此處係馬達）與從動軸（此處係坩鍋的轉軸）之 間的齒輪等的嚙合進行適當地切換，而可獏得許多種類的 從動軸迴轉數的裝置而言•在本發明中係藉由將這種變速 裝置與伺服馬達組合在一起，而製作成可在所使用的坩鍋 迴轉數的整個領域均能夠進行髙精度控制者•亦即，若想 要提髙坩鍋迴轉數的精度的話，雖然是需要加大馬達/坩 鍋軸之間的減速比，但是藉由將坩鍋迴轉數分割成許多個 領域的話，即可將各領域中的坩鍋的最髙迴轉數抑制成低 速以達成加大減速比之目的。而且，其他的迴轉速度領域 也可以控制，可利用變速裝置所具有的離合器或者滑動齒 輪等來進行切換減速比· 【發明之實施形態】 其次，佐以圔面說明本發明的實施形態。 第2圇係顯示使用本發明之MCZ法的結晶製造裝置的 概略圖•第2圖中，1代表供收容矽熔融液2之石英坩鍋 ,這種坩鍋係可隨著其中心軸3進行轉動·坩鍋的迴轉係 經由伺服馬達4所駆動，且被控制其迴轉速度•在於坩鍋 1的外周係配置著一個例如由石墨所製作的圓筒狀的加熱 器5。並在此加熱器5的外側可因應需要而配設有圓筒狀 本紙張尺度適用中國國家標隼（CNS ) A4ML枯（2丨OX29D>^ ) ---------d— > r (請先閲讀背面之注意事項再w'ric?本頁)、 1T -8-Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Printed by the Bayer Consumer Cooperative Cooperative B Ⅴ 5. Description of the invention (6) If the turning accuracy is improved, the speed reduction ratio between the motor / crucible shaft is used The method of switching and controlling by dividing the area of rotation will be very effective. * The "speed changing device" referred to here refers to: the original shaft (here the motor) and the driven shaft (here the system The gears and other gears of the crucible can be appropriately switched to engage with each other, and many types of driven shaft revolutions can be obtained. • In the present invention, this type of transmission is combined with a servo motor. Together, and it is made to be able to control the accuracy of the crucible revolutions in the entire field of use. That is, if you want to improve the accuracy of the crucible revolutions, it is necessary to increase the motor / crucible. The reduction ratio between the pot shafts, but by dividing the number of revolutions of the crucible into many fields, the maximum number of revolutions of the crucible in each field can be suppressed to a low speed to achieve the purpose of increasing the reduction ratio. In addition, other turning speed fields can be controlled, and the reduction ratio can be switched using a clutch or a sliding gear included in the transmission. [Embodiment of the Invention] Next, an embodiment of the present invention will be described with reference to the following description. The second line is a schematic view of a crystal manufacturing apparatus using the MCZ method of the present invention. In the second figure, 1 represents a quartz crucible for containing a silicon melt 2. The crucible can be carried out along its central axis 3. The rotation and rotation of the crucible is controlled by a servo motor 4 and its rotation speed is controlled. A cylindrical heater 5 made of, for example, graphite is arranged on the outer periphery of the crucible 1. On the outside of this heater 5 can be equipped with a cylindrical paper size according to the requirements of the Chinese national standard (CNS) A4ML dry (2 丨 OX29D > ^) --------- d- > r (Please read the notes on the back before w'ric? This page)
、1T -9 - 經濟部中央標準局貝工消费合作社印製 A 7 B7 五、發明説明（7 ) 的隔熱材料（省略其圖示）。並且在處理室6的外側配置 有由永久磁鐵或電磁鐵所製作的磁場產生裝置7 · 8係代 表單結晶的矽晶種，該單結晶乃被上拉驅動機構9沿著其 中心軸一面旋轉一面上拉•而矽單晶10就是利用道種 MC Z法所製造的· 在於利用這種MCZ法進行製造結晶時，本發明中特 別需要髙精度地控制坩鍋的迴轉速度•因此，例如第1圖 所示般地在於伺服馬達4與坩鍋轉軸3之間導入變速裝置 〇 第1圖中，首先伺服馬達4與減速機A嚙合，減速機 A、減速機B (減速機B的输入側）、雙重離合器F係利 用時規齒輪C、 D、 E以時規皮帶I連結在一起·減速機 B(的输出側）與雙重離合器F係利用齒輪G、 Η互相嚙 合在一起•此處，所謂的“雙重離合器F"係將2個離合 器機構裝在一個單元內所構成的，其中的一個系統係使用 於連結齒輪Η與滑輪J,另外一個系統係使用於連結時規 齒輪Ε與滑輪J·到底要令哪一方作動？係可藉由切換該 離合器而進行選擇·並且因爲滑輪J與滑輪Κ互相連結在 一起，所以整個裝置係製作成：可將坩鍋軸3的迴轉速度 分成兩個階段來進行控制。 例如：伺服馬達4的最大迴轉數設定爲3 0 0 0 r pm,減速機Α的減速比設定爲1/75,減速機Β的 減速比設定爲1/10的話，時規齒輪E係以最大轉速 4 0 r pm進行迴轉，齒輪Η係以最大轉速4 r pm進行 本纸張尺度適用中國國家標準（CNS ) 梢（2)0Χ297公穿） (請先閲讀背面之注意事項再％本頁)1T -9-Printed by Shellfish Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs A 7 B7 V. Insulation (7) of the invention description (omitted). A magnetic field generating device 7 · 8 made of a permanent magnet or an electromagnet is arranged on the outside of the processing chamber 6 and represents a single crystal silicon seed crystal, which is rotated by the pull-up driving mechanism 9 along its central axis. One-sided pulling • The silicon single crystal 10 is manufactured by the Dow MC Z method. When the MCZ method is used to manufacture crystals, the present invention requires particularly precise control of the crucible rotation speed. Therefore, for example, the first 1 As shown in the figure, the speed change device is introduced between the servo motor 4 and the crucible rotating shaft 3. In the first figure, the servo motor 4 is meshed with the reducer A, and the reducer A and the reducer B (the input side of the reducer B) ） 、 Double clutch F system is connected by timing belt C, D, E with timing belt I. Reducer B (output side) and double clutch F system are engaged by gears G and Η. Here, The so-called "dual clutch F " is composed of two clutch mechanisms installed in one unit. One system is used to connect the gear Η and the pulley J, and the other system is used to connect the time gauge gear E and the pulley J. · To Which side should be activated? It can be selected by switching the clutch. And because the pulley J and the pulley K are connected to each other, the whole device is made as follows: the rotation speed of the crucible shaft 3 can be divided into two stages For example: the maximum number of revolutions of servo motor 4 is set to 3 0 0 0 r pm, the reduction ratio of reducer A is set to 1/75, and the reduction ratio of reducer B is set to 1/10, the timing gear E series is rotated at a maximum speed of 4 r pm, gears are rotated at a maximum speed of 4 r pm. The paper size is applicable to Chinese National Standards (CNS). Tips (2) 0 × 297. (Please read the precautions on the back first) (% Of this page)
*1T -10 - A7 A7 經濟部中央標準局負工消f合作社印製 ____ 五、發明説明（8) 迴轉•根據雙重離合器F,可將齒輪Η或時規齒輪E的其 中一方與滑輪J相結合，而得以將滑輪J控制成以最大迴 轉數4 r pm或者4 0 r pm來進行轉動· 因此，想要在坩鍋迴轉的低速領域來進行拉單晶時， 可以將滑輪J與時規齒輪Η結合，想要在坩鍋迴轉的髙速 領域來進行拉單晶時，可以將滑輪J與時規齒輪Ε結合， 而分別在於坩鍋的高低迴轉領域，進行更髙精度地控制坩 鍋之迴轉。 此外，本發明係不限定於上述實施形態，當然也可以 進行各種變形或置換· 例如：在上述實施形態中雖然係利用雙重離合器來將 坩鍋迴轉領域剌分成兩個階段進行控制，當然也可將其劃 分成三個階段、四個階段或者更多階段，以資進行極爲細 微的控制，而且關於齒輪的切換方法，除了使用離合器之 外，也可以利用滑動齒輪、背齒輪、擺動連桿齒輪等· 又，至於馬達也不侷限於只有一個，亦可將複數個馬 達與變速裝置組合在一起· 進而，本發明也不侷限於利用MCZ法來製造矽單晶 的情況，當然也可適用於通常的CZ法，而且亦可適用於 矽以外的半導體、化合物半導體、氧化物單結晶等拉單晶 之情況。 【實施例】 以下，顯示本發明之實施例· 本纸張尺度適用中國國家標準（CNS ) Λ4規格（210Χ?<ί7公筇） -- I - - - - - I !— - - ! n J^· ^^1 I —^1 —— ml τ» -* ("先閲讀背面之注意事項再^、"本頁) -11 - 經滴部中央標準局貝工消費合作社印裝 A7 ___H7 _____ 五、發明説明（9) (實施例1 ) 在於上拉法（Pulling method或簡稱C z method) 中所採用的1 8”石英坩鍋內充填入6 0 k g的多結晶， 再利用該多結晶原料製造直徑6英吋矽單晶之製造裝置中 ，如果使用第2圖所示的不具變速裝置之傅統的坩鍋迴轉 機構的裝置的情況（比較例）時，與使用具有第1豳所示 般的本發明的變速裝置之坩鍋迴轉機構的裝置的情況（實 施例）時，分別對於兩者之一般被認爲具較大誤差的低速 領域時的坩鍋旋轉，進行實際測定其迴轉精度之結果，將 其結果顯示於第4圖* 由第4圖可知，根據本發明的裝置，可明顯地改善坩 鍋的迴轉精度，即使在於坩鍋迴轉的低速領域，其精度仍 然可被控制在於±0 . 02 r pm以下·柑對地，傳統的 裝置則僅有±0·1rpm以下的精度，其精度不佳· (實施例2 ) 在於MC Z法中採用：具有運用如第1圖所示的本發 明相關的變速裝置的坩鍋迴轉機構之結晶製造裝置，在 18”石英坩鍋內充填入6 0kg的多結晶，再對於該多 結晶原料一面施加2 5 0 0髙斯的磁場，一面製造直徑6 英时砂單晶，並且針對於谢鍋迴轉速度與結晶中的氧浪度 之關係進行調査•其結果如第5圖所示•兹由第5圖的結 果可知，使用本發明的裝置的話，即使在於租鍋迴轉的低 本纸張尺度適用中國國家摞準（CNS ) Λ4%梠（210x297公梦~)' -12 - -'. I - -1 - 1-. -----1 —II « ! .-1"- - _ . I Ϊ--1 . 丁 4 、-0 * - (誚先閱讀背而之注意事項再^^?本頁) ___ B7 五、發明説明（l〇) 速領域，仍然可以髙精度地控制結晶中的氧濃度· 【發明之效果】 根據本發明，係可在CZ法、MCZ法的結晶製造裝 置中，髙精度地控制供以收容原料熔融液的坩鍋之迴轉速 度·因此，使用此裝置來製造結晶的話，可有效地抑制由 於坩鍋的迴轉精度不足所引起的單結晶中的不純物澳度之 分佈偏差、變動等情形•因此，可以獏得含有所要求的不 純物量（不會過置或不足）之單結晶，所以對於提高由道 種單結晶所製作的各種裝置元件的特性具有貢獻· 【圖面之簡單說明】 第1圇係顯示本發明所設計的裝置之一例的概略圖· 第2圖係MC Z法的結晶製造裝置的概略圖· 第3圖係顯示傅統裝置中的坩鍋迴轉速度與結晶中的 氧濃度之關係· 第4圖係顯示實際測定坩鍋的迴轉精度的結果· 經漓部中央標率局員工消費合作社印製 第5圖係顯示本發明中的坩鍋迴轉速度與結晶中的氧 濃度之關係。 【圖號說明】 1 :坩鍋 2 :原料熔融液 3:钳鍋轉軸 本纸張尺度適用中國國家標準（CNS ) Λ4規梠（210X297公f ) 一 -13 - A7 137 五、發明説明（11) 4 :伺服馬達 5 :加熱器 6 :處理室 7:磁場產生裝置 8 :單結晶晶種 9 :上拉驅動裝置 1 0 :成長結晶 A、B :減速機 C、D、E :時規齒輪 F :雙重離合器 G、Η :齒輪 I :時規皮帶 J、Κ :滑輪 ^^^1 il^m. tut ^^^^1 nn :*Λ^· ^^^^1 ^^^^1 11^1^11 一 n "--° V m (誚先閲讀背面之注意事項再^¾本頁) 經满部中央標準局負工消費合作社印裝 本紙張尺度適用中國國家標準（CNS ) Λ4規梠（210χ?^7·:Μ_ί; -14 -* 1T -10-A7 A7 Printed by the Ministry of Economic Affairs, Central Standards Bureau, Consumers Cooperative ____ V. Description of the invention (8) Swivel • According to the dual clutch F, one of the gear Η or the timing gear E can be connected to the pulley J In combination, the pulley J can be controlled to rotate at a maximum number of revolutions of 4 r pm or 40 r pm. Therefore, if you want to pull a single crystal in the low-speed area of the crucible rotation, you can set the pulley J with the time The combination of gauges and gears is used. When you want to pull a single crystal in the high speed range of the crucible rotation, you can combine the pulley J with the time gauge gear E, and they are in the high and low rotation areas of the crucible for more precise control of the crucible. Turn of the pot. In addition, the present invention is not limited to the above-mentioned embodiment, and of course, various modifications or replacements are possible. For example, in the above-mentioned embodiment, although the double clutch is used to control the crucible turning area into two stages, it is of course possible to control It is divided into three stages, four stages, or more for extremely fine control, and the gear switching method can use sliding gears, back gears, and swing link gears in addition to clutches. Etc. Also, the motor is not limited to only one, and a plurality of motors may be combined with the transmission. Furthermore, the present invention is not limited to the case of manufacturing a silicon single crystal by the MCZ method, and of course, it can be applied to The ordinary CZ method can also be applied to the case of pulling single crystals such as semiconductors other than silicon, compound semiconductors, and oxide single crystals. [Examples] The following shows examples of the present invention. · The paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210 ×? ≪ ί7).-I-----I! —--! N J ^ · ^^ 1 I — ^ 1 —— ml τ »-* (" Read the precautions on the back before ^, " this page) -11-Printed by Abercrombie Consumer Cooperative of the Central Bureau of Standards, Didi Ministry, A7 ___H7 _____ V. Description of the invention (9) (Example 1) The 1 8 "quartz crucible used in the pull-up method (Cz method) is filled with 60 kg of polycrystals, and the In a 6-inch-diameter silicon single crystal production device using polycrystalline raw materials, when using a conventional crucible turning mechanism without a speed changer as shown in Fig. 2 (comparative example), it is the same as using the first In the case of the apparatus (example) of the crucible turning mechanism of the transmission according to the present invention as shown in the figure, the actual measurement is performed for the crucible rotation in the low-speed region where both are generally considered to have a large error. The result of the turning accuracy is shown in Figure 4 * As can be seen from Figure 4, according to this Ming device can obviously improve the accuracy of crucible rotation. Even in the low-speed area of crucible rotation, its accuracy can still be controlled within ± 0. 02 r pm. · On the ground, the traditional device is only ± 0. · Accuracy below 1 rpm, which is not good. (Embodiment 2) The MC Z method is adopted: a crystal manufacturing apparatus having a crucible turning mechanism using a shifting device according to the present invention as shown in Fig. 1, at 18 The quartz crucible is filled with 60 kg of polycrystals, and a magnetic field of 2 500 髙 s is applied to the polycrystalline raw material to produce a single crystal of 6-hour-diameter sand. Investigate the relationship between the oxygen range of the oxygen • The results are shown in Figure 5 • From the results in Figure 5, it can be seen from the results of Figure 5 that the use of the device of the present invention applies the Chinese national standard even for the low paper size of the revolving pot. (CNS) Λ4% 梠 （210x297 公 梦 ~) '-12--'. I--1-1-. ----- 1 —II «! .-1 "--_. I Ϊ--1 Ding4, -0 *-(诮 read the precautions before ^^? This page) ___ B7 V. Description of the invention (l〇) Speed field, However, the oxygen concentration in the crystal can be controlled with high accuracy. [Effect of the invention] According to the present invention, the rotation of the crucible for containing the molten material in the raw material can be accurately controlled in the crystal manufacturing apparatus of the CZ method and the MCZ method. Speed · Therefore, when using this device to manufacture crystals, it is possible to effectively suppress the distribution deviation and variation of impurities in single crystals due to insufficient rotation accuracy of the crucible. Therefore, it can contain the required Single crystals with an impure amount (not excessive or insufficient) contribute to improving the characteristics of various device elements made from single crystals. [Simplified description of the drawing] The first line shows the design of the present invention A schematic diagram of an example of the device. Fig. 2 is a schematic diagram of a crystal production device of the MC Z method. Fig. 3 is a diagram showing the relationship between the crucible rotation speed in a conventional system and the oxygen concentration in the crystal. Fig. 4 shows Results of the actual measurement of the crucible's turning accuracy. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Lithology. Figure 5 shows the crucible turning speed and oxygen in the crystal of the present invention. Degree of relationship. [Illustration of drawing number] 1: Crucible 2: Melt of raw material 3: Rotary shaft of clamp pot The paper size is applicable to Chinese National Standard (CNS) Λ4 Regulations (210X297 male f) -13-A7 137 V. Description of Invention (11 ) 4: Servo motor 5: Heater 6: Processing chamber 7: Magnetic field generator 8: Single crystal seed 9: Pull-up drive device 10: Growth crystal A, B: Reducer C, D, E: Timing gear F: Double clutch G, Η: Gear I: Timing belt J, Κ: Pulley ^^^ 1 il ^ m. Tut ^^^^ 1 nn: * Λ ^ · ^^^^ 1 ^^^^ 1 11 ^ 1 ^ 11 -1 n "-° V m (诮 Please read the precautions on the back before ^ ¾ this page) The paper size printed by the Central Bureau of Standards and Consumer Cooperatives applies the Chinese National Standard (CNS) Λ4 Regulations (210χ? ^ 7 ·: Μ_ί; -14-