TW390032B

TW390032B - Photoelectric conversion apparatus and X-ray image pickup apparatus

Info

Publication number: TW390032B
Application number: TW85111748A
Authority: TW
Inventors: Eiichi Takami; Tadao Endo; Akira Funakoshi; Noriyuki Kaifu; Isao Kobayashi
Original assignee: Canon Kk
Priority date: 1996-03-05
Filing date: 1996-09-25
Publication date: 2000-05-11

Abstract

A photoelectric conversion apparatus comprises a plurality of substrates. Each of the substrates has a plurality of photoelectric conversion elements on a rear surface thereof on a base. A light-absorbing member is privoded on at least one of a front surface and end faces of the substrate.

Description

第85U1748號專利申請案中文說明書修正頁 A7 B7 民國87年6月1 五、發明説明（） 13 要具有引導電子至透明m棰2 6之特性和防止電洞注入i 厝2 4之特性•缺少任一特性會導致光電流之降低•或在無入射光之幫流（暗電流）中之產生或增加，如此導致 S/N比之下降•此暗電流本身視爲雜訊，並包括構爲衝擊雜訊之振盪，亦即，量子雜訊•即使此種暗電流由值測單元1 2移去，伴隨暗電流而來之置子雜訊亦無法降低· 一般而言，爲了改善上述之特性，用於i曆24和η層2 5 之形成條件和在形成這些層之後之退火條件必需是較佳的 •雖然介於電子和電洞間之關係和上述之關係相反，但是，另一個注入防止册之Ρ層2 3需要具有和上述相同的特性，用於Ρ層23之相關條件亦必需是較佳化•通常，用於 η靥之最佳條件和用於ρ層之最佳條件不同，且相當難以同時滿足兩層之最佳條件•亦即*在單一光學感應器中之兩部份上所誓之注入防止層雖以形成具有高S/N比之光學感應器•此亦適用於在圖5 Β中之肖特基型感應器· 經濟部中央橾準局貝工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) 圖5 Β中之肖特基型感應器使用肖特基屏蔽靥當成一注入防止層·此屠使用在工作功能中介於下電捶2 2和i 層2 4間之差異•因此，用於下電捶2 2之材料釁限，且介面之局部位準會顯著的影響肖特基屏蔽層之特性•如此相當難以滿足用於層之條件•亦有研究指出在介於"^電極 2 2和i層2 4間形成具有約1 Ο 0 A厚之薄矽或金屬氧化物或氮化物膜以改善肖特基屏蔽潘之特性•此種構造使用隧道效應以引導竃洞至下電極2 2，和改善防止電子注入i靥2 4之效果•此種構造亦使用在工作功能中之差異本紙張尺度逍用中國國家橾準（CNS ) A4規格（210X297公釐） ! A7 B7 經濟部中央樣準局貝工消费合作社印製五、發明説明（！）發明背景發明領域本發明係關於一種光，轉換裝置和一X射線影像拾取裝置，且更特別而言，係關於一種光電轉換裝置，其中具有多數光電轉換元件之多數基底乃安排以相關於~大區域執行讀取操作，和使用該光電轉換裝置之X射線影像拾取裝置· 相關習知技藝 q 在習知技藝中，，使用一降低光學系二c- C D型感應器之讀取系統已使用以讀取在一X射線影/像拾取裝置中之例如資訊之影像。以最近在使用非晶半導髖且由氫化非晶矽所典型化的 (以下視爲a — S i )之光電轉換半導體材料之發展而言，在所謂的接觸型感應器中已有顯著的進步，其藉由形成具有多數之光電轉換元件之光電轉換單元在一大的基底上而得，且可以1 X之放大率讀取一基底源。 a _ S i不只可使用當成光電轉換半導體材料以用於光電轉換單元，且亦可使用於薄膜場效電晶體（以下視爲 TFT)之半導體材料。因此已有許多研究致力於形成一訊號處理單元在一大區域基底上，和一光電轉換元件一起 •此外，由於用於光電轉換元件之光電轉換半導體層可共同的使用當成用於T F T之半導體層，這些層可在相同的 v 時間形成。 (請先閲讀背面之注 :寫本頁) .裝. ,/L· 本纸張尺度逍用中國國家揉準（CNS ) A4规格（210X297公釐） A7 卜‘―，正 B7_ I 補亦▲ 五、發明説明（) 14 ，且因此，用於下電極2 2之材料亦有所限制。再者，由於此構造使用相反的性質，亦即，藉由除道效應防止電子之注入和電洞之移動，因此•氧化或氮化膜受限至具有約 1 Ο 0A之厚度之非常薄的膜•再者，由於難以控制厚度和膜之品質，生產率會降低· 在兩部份上需要注入防止層會導致低的生產率和高的成本，其理由如下•有蓥於上述之特性，此兩注入防止層非常重要•因此，如果在一或兩厝中由灰塵等產生缺陷時，則無法獲得窬用於光學感應器之良好特性· 經濟部中央標準局貝工消费合作社印聚 (請先閲讀背面之注f項再填寫本頁) 以下參考圖6說明第二個理由。圖6爲以薄半導體靥製成之場效電晶體（TFT)之層構造。TFT有時使用當成形成光電轉換裝置之控制單元之一部份。在圚6中，和圓5 A和5 B中相同的部份以相同的參考數字表示* TFT包括一閘絕緣膜2 7和一上電極6 0 ·以下順序的說明形成TFT之方法•下電極22當成一閘電極（G) ，一閘絕緣膜27，一 i屠24，一 η曆25 ·和上電極 6 0當成源和汲極（S和D )，乃顒序的形成在一絕緣基底21上·上電極60受蝕刻以形成源和汲極·而後，η 層2 5受蝕刻以形成一通道部份· TFT之特性可由介於閘絕緣膜2 7和i層2 4間之介面之狀態而輕易的嚷響。一般而言*爲了避免介面之污染，這些餍連績的沉積在相同的真空中。此種層結構在形成習和光學感應器在和T F T形成所在之相同基底上會引起一些問題，如此導致成本之增加和本紙眛尺度適用中國國家標车（CNS ) A4规格（210X297公釐> -17 - A7 ___B7___ 五、發明説明（2 ) 在形成例如電容之電容元件在相同基底時，如果相對電極互相絕緣*則可在其間形成一半導體層。如此可使構成光電轉換元件和/或T F T之膜之沉積順序和構成電容元件之膜之沉稹順序相同。結果，用以形成元件之相關型式之膜可在相同處理中同時形成。因此，可提供一種光電轉換裝置，其具有高的S/N 比和較低的成本，且具有大面積，大效能和良好的特性。有一些研究亦致力於應用具有以矩陣型式安排在大面稹基底之光電轉換元件之光電轉換裝置至X射線影像拾取裝置之光吸收裝置。經濟部中央櫺率局貝工消费合作社印氧由於光電轉換裝置具有大的面積和大的光吸收表面，在製造處理中其變的相當難以完全的移除微小的灰塵（在基底上，在非晶矽層之沉稹處理中，由薄膜沉稹裝置之壁所剝離之灰塵：在處理步驟中，在空氣中浮動之灰塵；和當沉稹一金屬層等，附著至一基底之異物等）。因此，面積之增加會導致接線失敗發生之可能性，如在一基底內之接線靥之短電路和一開路，和在例如光電轉換元件之相關元件中之錯誤。因此，當面積增加時，生產率降低。結果，光電轉換裝置之成本會增加β 爲了解決此種問題，藉由安排多數之光電轉換單元可製造大面積光電轉換裝置。如果多數之光電轉換單元以此方式安排，每個基底之面積會降低·結果*生產率增加，且每個基底之成本亦可降低。 ^紙張尺度適用中國國家梯準（匚阳）八4规格（210><297公釐） ~ " -5 - A7 B7 幻Η负l〇修正補充, 五、發·明（18) 磷光物形成在每個鼷索上•當X射_入射在麵素上時* X 射線由磷光物（c s I )轉換成光（由虛線箭頭所表示），且光入射在光電轉換元件上•以此方式，磷光物當成一光轉換器以接收具有給定波長之光和發射具有不同波長之光· 以下參照圖8至1 0說明光電轉換裝置之操作，圖 1 0爲圖8中之裝置之操作之時間圓。經濟部中央標準局員工消費合作社印家 (讀先閲讀背面之注意事項再填寫本頁)85U1748 Patent Application Chinese Specification Correction Page A7 B7 June 87, Republic of China 1. Description of Invention () 13 Must have the property of guiding electrons to transparent m 棰 2 6 and the feature of preventing hole injection i i2 4 • Lack Either characteristic causes a reduction in photocurrent. • It is generated or increased in the flux (dark current) without incident light. This results in a decrease in the S / N ratio. • The dark current itself is considered as noise and includes Oscillation of impact noise, that is, quantum noise • Even if this dark current is removed by the value measuring unit 12, the sub-noise accompanying the dark current cannot be reduced. Generally speaking, in order to improve the above characteristics The formation conditions for i calendar 24 and η layer 2 5 and the annealing conditions after forming these layers must be better. • Although the relationship between electrons and holes is opposite to the above relationship, another injection The P layer 2 3 of the prevention book needs to have the same characteristics as above, and the relevant conditions for the P layer 23 must also be optimized. • Generally, the optimal conditions for η 靥 and the optimal conditions for ρ layer are different. , And it is quite difficult to satisfy both Optimal conditions • That is, * the injection prevention layer pledged on two parts of a single optical sensor to form an optical sensor with a high S / N ratio. This also applies to SCHOTT in Figure 5B. Basic type sensor · Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative (please read the precautions on the back before filling out this page) Figure 5 The Schottky type sensor in Β uses a Schottky shield as an injection Preventive layer · The use of this device in the work function is between the difference between power down 2 2 and i layer 2 4 • Therefore, the material used for power down 2 22 and the local level of the interface will significantly affect Xiao Characteristics of the special base shield layer • It is so difficult to meet the conditions for the layer • Some studies have pointed out that a thin silicon or metal oxide with a thickness of about 100 A is formed between the ^ electrode 2 2 and the i layer 2 4 Materials or nitride films to improve the characteristics of the Schottky shielding pan. This structure uses a tunneling effect to guide the hole to the lower electrode 2 2 and improve the effect of preventing electron injection i 2 24. This structure is also used in work. Differences in function This paper standard is not used in China National Standard (CNS) A4 specification (210X297mm)! A7 B7 Printed by the Shell Specimen Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs V. Description of the Invention (!) BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a light, conversion device and an X-ray image pickup device, and more In particular, it relates to a photoelectric conversion device in which most substrates having most photoelectric conversion elements are arranged to perform reading operations in a large area, and an X-ray image pickup device using the photoelectric conversion device. q In the conventional art, a reading system using a lowering optical system and a c-CD type sensor has been used to read an image such as information in an X-ray imaging / image pickup device. With regard to the recent development of photoelectric conversion semiconductor materials using amorphous semiconductors and typified by hydrogenated amorphous silicon (hereinafter referred to as a-S i), there have been significant advances in so-called contact sensors. Progress, which is obtained by forming a photoelectric conversion unit with a large number of photoelectric conversion elements on a large substrate, and can read a substrate source at a magnification of 1X. a_S i can be used not only as a photoelectric conversion semiconductor material for a photoelectric conversion unit, but also as a semiconductor material for a thin film field effect transistor (hereinafter referred to as a TFT). Therefore, many studies have been devoted to forming a signal processing unit on a large area substrate together with a photoelectric conversion element. In addition, since the photoelectric conversion semiconductor layer used for the photoelectric conversion element can be commonly used as the semiconductor layer for the TFT These layers can be formed at the same v time. (Please read the note on the back: write this page first.). Loading., / L · This paper size is in accordance with Chinese National Standards (CNS) A4 specifications (210X297 mm) A7 Bu '-, B7_ I supplement also ▲ V. Description of the invention () 14, and therefore, the material used for the lower electrode 22 is also limited. Furthermore, since this structure uses the opposite property, that is, the injection of electrons and the movement of holes are prevented by the channel removal effect, the oxide or nitride film is limited to a very thin film having a thickness of about 100 A Film • Furthermore, it is difficult to control the thickness and the quality of the film, and the productivity will be reduced. The need to inject a protective layer on both parts will result in low productivity and high cost. The reasons are as follows. The injection prevention layer is very important. Therefore, if a defect is caused by dust or the like in one or two frames, the good characteristics of the optical sensor cannot be obtained. (Note f on the back is to be completed on this page.) The second reason will be explained below with reference to FIG. 6. FIG. 6 is a layer structure of a field effect transistor (TFT) made of a thin semiconductor semiconductor. TFTs are sometimes used as part of a control unit forming a photoelectric conversion device. In 圚 6, the same parts as in circles 5 A and 5 B are denoted by the same reference numerals. * TFT includes a gate insulating film 27 and an upper electrode 6 0. The following sequence describes the method of forming a TFT. Lower electrode. 22 as a gate electrode (G), a gate insulating film 27, a gate 24, a η calendar 25, and an upper electrode 60 as a source and a drain (S and D), which are sequentially formed on an insulating substrate 21 The upper electrode 60 is etched to form a source and a drain electrode. Then, the η layer 25 is etched to form a channel portion. The characteristics of the TFT can be determined by the interface between the gate insulating film 27 and the i layer 24. The state sounded easily. In general * In order to avoid contamination of the interface, these successive results are deposited in the same vacuum. This layer structure will cause some problems in the formation of Xi and optical sensors on the same substrate as the TFT, which will lead to an increase in cost and the paper size applicable to the Chinese National Standard Car (CNS) A4 specification (210X297 mm > -17-A7 ___B7___ V. Description of the Invention (2) When forming a capacitive element such as a capacitor on the same substrate, if the opposite electrodes are insulated from each other *, a semiconductor layer can be formed therebetween. This can constitute a photoelectric conversion element and / or a TFT The deposition order of the film is the same as the deposition order of the film constituting the capacitor element. As a result, the relevant types of films used to form the element can be formed simultaneously in the same process. Therefore, a photoelectric conversion device having a high S / N ratio and lower cost, and has large area, large efficiency and good characteristics. Some researches are also dedicated to the application of photoelectric conversion devices with photoelectric conversion elements arranged in a matrix pattern on a large area substrate to X-ray images The light absorption device of the pick-up device. The Central Printing Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed oxygen because the photoelectric conversion device has a large Product and large light absorption surface, it becomes quite difficult to completely remove tiny dust in the manufacturing process (on the substrate, in the process of sinking the amorphous silicon layer, it is peeled off by the wall of the film sinking device Dust: Dust floating in the air during the processing step; and when a metal layer etc. sinks, foreign matter attached to a substrate, etc.) Therefore, an increase in area may lead to the possibility of wiring failure, such as a substrate The short circuit and an open circuit inside the wiring, and errors in related components such as photoelectric conversion elements. Therefore, as the area increases, productivity decreases. As a result, the cost of the photoelectric conversion device increases β In order to solve such problems, A large-area photoelectric conversion device can be manufactured by arranging a large number of photoelectric conversion units. If a large number of photoelectric conversion units are arranged in this way, the area of each substrate will decrease, and as a result, productivity will increase, and the cost of each substrate may also be reduced. ^ Paper size is applicable to China National Ladder Standard (Liyang) 8-4 specification (210 > < 297mm) ~ " -5-A7 B7 Magical minus 10 amendment correction, Fa Ming (18) Phosphors are formed on each cable. • When X-rays are incident on the nuclei * X-rays are converted from phosphors (cs I) into light (represented by dotted arrows), and the light Incident on the photoelectric conversion element • In this way, the phosphor acts as a light converter to receive light having a given wavelength and emit light having a different wavelength. The operation of the photoelectric conversion device is described below with reference to FIGS. 8 to 10, FIG. 1 0 is the time circle of the operation of the device in Figure 8. Yin Jia, an employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (read the precautions on the back before filling this page)

首先，高位準訊號由移位暫存器SR1和SR2應用以控制線gl至g3和sgl至sg3·結果，轉換 TFT ΤΙ 1至T 33和開關Ml至M3啓動，且所有光電轉換元件S 1 1至S 3 3之D電極設定至GND電位 (因爲積體偵測器Amp之输入端設定至GND電位）· 同時，更新控制電路RF输出一髙位準訊號以啓動開關 SWg。結果，光電轉換元件SI 1至S33之G «極由更新電·源供應器V g設定至一正電位•而後，所有的光電轉換元件S 1 1至S 3 3設定在更新模式中以用於更新· 當更新控制電路R F输出一低位準訊號以啓動開關SW s ，所有光電轉換元件S 1 1至S 3 3之G電極由讀電源供應器V s設定至一負電位•結果，所有的光電轉換元件S 1 1至S 3 3皆設定在光電轉換模式中。同時，電喀C 1 1至C33初始化。在此狀態中，移位暫存器SR1和 SR2應用低位準訊號至控制線g 1至g 3和s g 1至 sg3 *結果，用於轉換T. FT Til至T33之開關 Ml至M3關閉，且以D C分置視之所有光電轉換元件S 本紙張尺度適用中國國家標半（CNS ) A4規格（210X297公漦） -21 - A7 B7 經濟部中央橾準局負工消费合作社印装五、發明説明< 3 ) 以此種安排 9 即使多數之基底之 — 變成有缺陷 t 亦僅需更換此缺陷基底即可 0 如此可達成成本之進一步降低 0 在某些例中 » 亦可達成在_ 護成本上之降低〇在上述多數之基底二維的安排之光電轉換裝置中 9 欲接收之光 ( 例如 9 在 X 射線影像拾取裝置之例中，當來白 X 射線源之 X 射線入射時由一磷發射之光 )入射在光電轉換元件基底 > 且由下表面或一端面部份反射，以進入光電轉換元件之光吸收部份蠡如此會引起在光學特性上之損壞 9 例如 > 在光電轉換裝置中之解析度之降低· 發明概要本發明之巨的乃在改善光學特性例如，大面稹光電轉換裝置之解析度其乃由結合多數光電轉換元件基底而形成藉以解決由例如來白磷層所發射之光受到接收之問題 0 該光線由非光電轉換單元之部份如光電轉換元件之下表面和結合基底之端部份所反射並吸收〇爲了達成上述之巨的 » 依照本發明 9 於此提供 — 種具有多數基底之光電轉換裝置 > 每個基底具有多數之光電轉換元件在一基礎之上表面上 9 該光電轉換裝置在基底之至少一下表面或端表面上包含一光吸收構件 Ο 此外 t 依照本發明 » 於此提供一種 X 射線影像拾取裝置包含含有多數基底之光電轉換機構 9 每個基底具有多數之光電轉換元件在一基礎之上表面上 > 和一光吸收 J/Ut 俩件在基底之至少一下表面或端面上， X 射線照射機構用以照本纸張尺度逋用肀國國家揉率（CNS ) A4規格（210X297公釐） A7 _ _B7_ 五、發明説明（，） 4 射X射線，和一光轉換器用以接收X射線並產生具有不同波長之光。再者，在上述之裝置中，該基底具有一光電轉換元件，其藉由叠層一第一電極層* 一絕緣曆* —光電轉換半導體層，用以禁止第一導電型之載子之注入之一半導體層，和一第二電極層而形成；First, the high-level signals are applied by the shift registers SR1 and SR2 to control the lines gl to g3 and sgl to sg3. As a result, the switching TFTs T 1 to T 33 and the switches M1 to M3 are activated, and all the photoelectric conversion elements S 1 1 The D electrode to S 3 3 is set to the GND potential (because the input terminal of the integrated detector Amp is set to the GND potential). At the same time, the control circuit RF output updates a level signal to activate the switch SWg. As a result, the G «poles of the photoelectric conversion elements SI 1 to S33 are set to a positive potential by the refresh power supply source V g · Then, all the photoelectric conversion elements S 1 1 to S 3 3 are set in the refresh mode for Update · When the update control circuit RF outputs a low level signal to activate the switch SW s, the G electrodes of all the photoelectric conversion elements S 1 1 to S 3 3 are set to a negative potential by the read power supply V s. As a result, all the photoelectric The conversion elements S 1 1 to S 3 3 are all set in the photoelectric conversion mode. At the same time, the electric carriages C 1 1 to C33 are initialized. In this state, the shift registers SR1 and SR2 apply the low level signals to the control lines g 1 to g 3 and sg 1 to sg3 * result, the switches M1 to M3 for switching T. FT Til to T33 are closed, and All photoelectric conversion elements viewed by DC separation S This paper size is applicable to China National Standard Half (CNS) A4 specifications (210X297 gong) -21-A7 B7 Printed by the Central Consumers' Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. V. Description of the invention < 3) With this arrangement 9 even if most of the substrates—become defective t, only the defective substrates need to be replaced. 0 This can achieve a further reduction in costs. 0 In some cases, it can also achieve protection costs. In the majority of the above-mentioned two-dimensionally arranged photoelectric conversion devices, 9 light to be received (for example, 9 in the example of an X-ray image pickup device, when X-rays from a white X-ray source are incident, a phosphorous Light emitted) is incident on the substrate of the photoelectric conversion element > In order to enter the light absorbing part of the photoelectric conversion element, it will cause damage to the optical characteristics. 9 For example, the resolution of the photoelectric conversion device will be reduced. Summary of the invention The great thing of the present invention is to improve the optical characteristics. For example, The resolution of the large-faced photoelectric conversion device is formed by combining the substrates of most photoelectric conversion elements to solve the problem of receiving light emitted by, for example, a white phosphorous layer. The lower surface and the end portion of the combined substrate are reflected and absorbed. In order to achieve the above-mentioned huge »according to the present invention 9 is provided here-a photoelectric conversion device having a plurality of substrates > each substrate has a majority of photoelectric conversion elements A base on the surface 9 The photoelectric conversion device covers at least the lower surface or the end surface of the substrate A light absorbing member 0 In addition, according to the present invention there is provided an X-ray image pickup device including a photoelectric conversion mechanism including a plurality of substrates 9 each substrate having a plurality of photoelectric conversion elements on a base surface > and a light Absorb J / Ut on at least the lower surface or end surface of the substrate. The X-ray irradiation mechanism is based on the size of the paper and uses the national kneading rate (CNS) A4 specification (210X297 mm) A7 _ _B7_ V. Invention Explanation (,) 4 X-rays, and a light converter to receive X-rays and generate light with different wavelengths. Furthermore, in the above-mentioned device, the substrate has a photoelectric conversion element, and by laminating a first electrode layer * an insulating calendar * -a photoelectric conversion semiconductor layer, it is used to prohibit the injection of carriers of the first conductivity type. A semiconductor layer and a second electrode layer;

光電轉換機構，用以應用一電場至該光電榑換元件，以一方向，其中由訊號光所產生入射在光電轉換半導體靥上之第一導電型載子可受到保持，和與第一導電型不同之第二導電型之載子受引導向著第二電極餍；訂更新機構，用以應用一電場至該光電轉換元件，以一方向，其中，第一導電型之載子由光電轉換半導體層引導向著第二電極層；和The photoelectric conversion mechanism is used to apply an electric field to the photoelectric conversion element in a direction in which the first conductive type carrier generated by the signal light and incident on the photoelectric conversion semiconductor can be held, and the first conductive type Different carriers of the second conductivity type are guided toward the second electrode; and an update mechanism is used to apply an electric field to the photoelectric conversion element in one direction, wherein the carriers of the first conductivity type are formed by the photoelectric conversion semiconductor layer Guided towards the second electrode layer; and

Of 一訊號偵測單元，用以在由該光電轉換機構執行一光電轉換操作時，偵測儲存在光電轉換半導體層中之第一導電型之載子或引導至第二層之第二導電型載子。經濟部中央橾準扃貝工消费合作社印裝圖式簡單說明圖1爲依照本發明之一較佳實施例之光電轉換裝置之 —平面圖：圖2爲沿圖1之2 — 2線所截取之截面圖；圖3爲用以形成在本發明中使用之光1收構件之裝S 之示意.晒二圖4 A至4 C爲用以形成在本發明中使用之光吸收搆本紙張尺度逋用中國國家橾率（CNS ) A4规格（210X297公釐） 7 A7 __B7___ 五、發明説明丨5) 件之方法之示意圓；圖5 A至5 C爲用以說明光亀轉換元件之示意圖[ 圖6爲另一光電轉換元件之截面圖7爲在一 W絕緣HP上之T丨T之生產率、之相依性之圖；圖β爲本發明之光電轉換裝置之電路圖；圖*9 Α和9 Β爲本發明中使用之光電轉換元件之構造之示意圖；圖10爲本發明之光電轉換裝置之驅動時間之時間腼 » 圖1 1爲依照本發明之一實施例之光電轉換裝置之平面圖；圖12爲依照本發明之另一資施例之光電轉換裝置之平面圚；圓1 3爲本發明之X射線影、像拾取裝置之示意園; 圖1 4A和1 4B爲依照本發明之另一實施例之光電轉換裝置之圖；圖1 5A和1 5 B爲依照本發明之另一實施例之光電轉換裝置之圖；圓1 6爲依照本發明之另一實施·例之光電轉換裝置之國，圖1 7爲圓1 6之光電轉換袭置之截面圖.； .圖1 8爲依照本發明之另一實施例之光電韆名裝置& 平面圈；本紙張尺度遍用中國國家揉準（CNS ) A4規格（210X297公釐）請先聞Of a signal detection unit for detecting a carrier of a first conductivity type stored in a photoelectric conversion semiconductor layer or a second conductivity type guided to a second layer when a photoelectric conversion operation is performed by the photoelectric conversion mechanism Carrier. Brief description of the printed drawings of the central government's Zhunyang Beigong Consumer Cooperative. Figure 1 is a plan view of a photoelectric conversion device according to a preferred embodiment of the present invention. Figure 2 is a view taken along line 2-2 of Figure 1 Sectional view; Figure 3 is a schematic view of a device S used to form a light-receiving member used in the present invention. Figures 2A to 4C are used to form a light-absorbing structure paper sheet used in the present invention. Using China's National Standard (CNS) A4 specification (210X297 mm) 7 A7 __B7___ V. Description of the invention 丨 5) Schematic circle of the method; Figures 5 A to 5 C are schematic diagrams used to explain optical conversion elements [Figure 6 is a cross-section of another photoelectric conversion element. FIG. 7 is a graph of productivity and dependence of T 丨 T on a W-insulated HP. FIG. Β is a circuit diagram of the photoelectric conversion device of the present invention. FIG. * 9 Α and 9 Β FIG. 10 is a schematic diagram of a structure of a photoelectric conversion element used in the present invention; FIG. 10 is a driving time of the photoelectric conversion device of the present invention; FIG. 11 is a plan view of a photoelectric conversion device according to an embodiment of the present invention; Photoelectricity according to another embodiment of the present invention The plane 圚 of the changing device; Circle 13 is a schematic circle of the X-ray imaging and image pickup device of the present invention; Figures 14A and 14B are diagrams of a photoelectric conversion device according to another embodiment of the present invention; Figures 15A and 1 5B is a diagram of a photoelectric conversion device according to another embodiment of the present invention; circle 16 is a country of photoelectric conversion devices according to another embodiment of the present invention, and FIG. 17 is a photoelectric conversion device of circle 16 Sectional view of the installation. Figure 18 is a photonics device according to another embodiment of the present invention & flat circle; This paper is commonly used in China National Standard (CNS) A4 size (210X297 mm). smell

Si 之注‘Si Note ‘

訂經濟部中央揉準局負工消费合作社印掣 8 A7 B7 弄、發明説明（6 ) 圖1 9爲圈1 8之光電囀換裝置之截面圖；圖2 0爲本發明之光電轉換裝置之製造方法之步驟® i 鲁圓2 1爲依照本發明之另—费'德"例之光電、膊換裝置？：平面圖； t 圖2 2爲本發明之光雪轉換裝^置之圈；匾2 3爲本發明中使用之訊跋座_理方法之流程画；圖2 4爲本發明中使用之-訊號良理方法之流程; 圖2 5爲在光電轉換裝置之基1上_之資料安排之0，· . 人圓2 6爲本發明之X射線偵測光-電轤換裝-置之截面圖 :和 »2 7爲依照本發明之另一實施®L之光，重轉_換裝置之^ 平面圖較佳資施例之詳細說明圖1爲依照本發明之一較佳實施例之光電轉換裝置之示意平面圖。圖2爲沿圖1之線2_2所截取之橫截面圖 —光電轉換元件陣列1具有多數之基底1 一 1，1 一 2，1 一 3，和1一 4。每個基底具有一群光電轉換元件在其表面上。一基礎2支撐基底1 一 1，1 — 2，1一3和1 一 4 〇四個基底1 一 1至1 - 4以黏著劑3固定和結合至基本紙張尺度適用中國國家梯準（CNS ) A4規格（210 X 297公釐） n (請先閲讀背面之f意事頁) 經濟部中央橾準局貝工消费合作社印装 A7 ____B7__ 五、發明説明（7 ) 礎2。在本發明中，黏劑3當成遮光構件或防止反射構件二例如來自基底（1 一 1至1 — 4 )之入射光由黏著劑 \ 3吸收在前基底表面側。如此可防止光由前基底表面所反射，和入射在後基底表面側上之光電轉換元件群上（未顯示）。此功能爲一防止反射功能· 此外，黏著劑3用以吸收入射光，以使來自裝置之側表面（端面）之入射光避免通過黏著劑3，和到達在後基底表面側上之光電轉換元件群•相似的，黏著劑3吸收由基礎2之前表面來之入射光，以避免在基礎2之後表面側上之光經由黏著劑3而到達在後基底表面上之光電轉換元件群。此功能即爲一遮光功能。爲了達成上述之防止反射和遮光功能，黏著劑3由吸光材料構成，其可吸收由光電轉換元件所接收之光。本發光吸收材料無需吸收所有波長之光線，而僅需吸收嘗ULAJi換元件接收且光學轉換時會變成雜訊分量之光分量》經濟部中央樣準局工消費合作社印装例如，在用於X射線影像拾取裝置之光電轉換裝置中 ’如果光吸收材料可吸收由當成光縳梅器之磷所發射之光時，即已足夠。其係說明如下· 因此，本發明中使用之光吸收材料可爲一黑色材料或顏色互補於由光電轉換元件所接收之光之顔色之材料· 在上例中，黏著劑當成光吸收材料。但是，黏著劑之功能和光吸收材料之功能可互柑分離。就本發明中使用之本紙張尺度適用中國B家揉準（CNS > A4規格（210X297公釐） -10 - A7 B7 五、發明説明（8 ) 光吸收構件之材料而言，可利用如金屬氧化物之無機,材料或例如樹脂之有機材料。以有機材料製成光吸_構件之形成方法包括使用一染料以對一樹脂直接著色之方法，和適當的混合一樹脂和一光吸收顏料之方法。就通常最容易實施之方法而言，最好使用適當的混合一樹脂和顔料以獲得所需之色調之方法。Order of the Central Government Bureau of the Ministry of Economic Affairs of the Central Government Bureau of Work and Consumer Cooperatives 8 A7 B7, Invention Description (6) Figure 19 is a cross-sectional view of the photoelectric conversion device of circle 18; Figure 20 is the photoelectric conversion device of the present invention Steps of the manufacturing method ® i Luyuan 2 1 is another photoelectric device according to the present invention—Fei'de " example? : Plan view; t Figure 2 2 is the circle of the light-snow conversion device of the present invention; plaque 23 is the flow chart of the method of the post-processing method used in the present invention; Figure 2 4 is the signal used in the present invention-signal The flow of the rational method; Figure 2 5 is the 0 of the data arrangement on the base 1 of the photoelectric conversion device.. Renyuan 26 is a cross-sectional view of the X-ray detection light-electricity conversion equipment of the present invention. : And »2 7 is a light emitting, retransmission_change device according to another implementation of the present invention. ^ A detailed illustration of a preferred embodiment of a plan view. Figure 1 is a photoelectric conversion device according to a preferred embodiment of the present invention. The schematic plan view. Figure 2 is a cross-sectional view taken along line 2_2 of Figure 1-the photoelectric conversion element array 1 has a plurality of substrates 1-1, 1-2, 1-3, and 1-4. Each substrate has a group of photoelectric conversion elements on its surface. 1 foundation 2 supporting substrates 1-1, 1-2, 1-3 and 1-4 4 four substrates 1-1 to 1-4 fixed and bonded to the basic paper scale with adhesive 3 Applicable to China National Standards (CNS) A4 specifications (210 X 297 mm) n (Please read the f fact sheet on the back) Printed on the A7 __B7__ by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (7) Basics 2. In the present invention, the adhesive 3 serves as a light-shielding member or an anti-reflection member 2. For example, incident light from the substrate (1-1 to 1-4) is absorbed by the adhesive \ 3 on the front substrate surface side. This prevents light from being reflected from the front substrate surface and incident on the photoelectric conversion element group on the rear substrate surface side (not shown). This function is an anti-reflection function. In addition, the adhesive 3 is used to absorb incident light, so that the incident light from the side surface (end surface) of the device can avoid passing through the adhesive 3 and reach the photoelectric conversion element on the rear substrate surface side. Group • Similarly, the adhesive 3 absorbs the incident light from the front surface of the foundation 2 to prevent the light on the surface side after the foundation 2 from reaching the photoelectric conversion element group on the rear substrate surface via the adhesive 3. This function is a shading function. In order to achieve the above-mentioned anti-reflection and light-shielding functions, the adhesive 3 is composed of a light-absorbing material, which can absorb light received by the photoelectric conversion element. This luminous absorbing material does not need to absorb light of all wavelengths, but only absorbs light components that are received by the ULAJi transducer and become optical components when optically converted. "Printed by the Central Procurement Bureau of the Ministry of Economic Affairs. In the photoelectric conversion device of the radiographic image pickup device, it is sufficient if the light absorbing material can absorb the light emitted by the phosphor which is used as a photo-binding device. The description is as follows. Therefore, the light absorbing material used in the present invention may be a black material or a material whose color is complementary to the color of the light received by the photoelectric conversion element. In the above example, the adhesive is used as the light absorbing material. However, the function of the adhesive and the function of the light absorbing material can be separated from each other. As for the paper size used in the present invention, it is applicable to Chinese B homes (CNS > A4 size (210X297mm) -10-A7 B7 V. Description of the invention (8) For the material of the light absorbing member, such as metal Inorganic materials, materials of oxides, or organic materials such as resins. A method for forming a light-absorbing member made of an organic material includes a method of using a dye to directly color a resin, and an appropriate mixture of a resin and a light-absorbing pigment. Method: As for the method which is usually easiest to implement, it is best to use a method of appropriately mixing a resin and a pigment to obtain a desired hue.

訂關於所使用顔料之型式，可使用下列之有機顔料：硝基著色劑，偶氮顔料.，陰丹士林，硫靛（.thioindigo perynone)，梵，二囉暸，睡DY陡，駄花青，異氣，奎諾联睛基顔料（qu i nophtha.l one-based pigments)等。亦可使用下述之無機顔料：礙黑，鉻黃，鎘黃，三葉草（cl over mill-ion)(橘色），紅氧化鐵，朱紅氧北物，紅鉛，鉻紅，礦紫等，鈷藍，鈷綠，鉻氧化物（綠色），綠陡（viridian)(綠色）等4 依照磷之振盪波長，藉由適當的選擇上述之顏料，即可形成具有所需色調之光吸收構件或黑色光吸收構件。經濟部中央揉準局員工消费合作社印製就本發明中使用於光吸收構件之樹脂而言，可使用一環氧樹脂，丙烯酸樹脂，和矽酮樹脂· 就環氧樹脂而言，可使用BAE環氧樹脂當成雙酚A 和氯甲代氧丙環之冷凝物，其實際上最常使用。此外，就含有此種樹脂當成主要成份之樹脂而言*可使用下列之樹脂：雙酚F，其同系物，鹵代樹脂，藉由將一環氧群導入聚醇，二聚酸，三聚酸，或含有氯甲代氧丙環之酚醛清漆樹脂中而得之樹脂，藉由將環氧群導入具有過氧化物之聚本紙張尺度適用中_因家標率（CNS ) A4规格（210X297公釐） A7 _ . B7_ 五、發明説明丨9 ) 烯烴而得之樹脂，和稱爲環脂族環氧樹脂之環氧樹脂。. B A E環氧樹脂之用途已伴隨著相關於每個硬化劑之硬化物質物性而充份的研究，琴此關於B A E環氧樹脂已具有充份的資料。且因此此種材料可安全的使用。關於硬化劑方面，可使用下述之硬化劑之一以獲得具有適於一塗覆步驟特性之一環氧樹脂：二乙撐三胺，η -氨基乙基哌嗪，苄基甲胺，甲苯二胺，二胺基二苯基甲烷，二胺基二苯基乙烷，聚醢胺樹脂，二氨基氡，三氟化硼 •單乙基胺，甲基咪唑，酞酸酐，六氫酞酸酐，甲基那地 (raye’hylnadic)酸酐，苯均四酸酐，可瑞納地（chloren- dic)酸酐‘等。 • * 就丙烯酸樹脂而言，已知具有不同聚合型式之三種樹脂：由單體或漿之塊聚合而得之鋳入聚合物，由懸浮聚合而得之粒狀樹脂，和使用一抽出器相關於由懸浮聚合而形成之粉末而得之粒狀樹脂。可選擇和使用這些樹脂中最適合用於一塗覆步驟之樹脂。經濟部中夬棟率局貝工作杜印«. 就矽酮樹脂而言，可使用利用三氯矽烷和二氯矽烷之甲基矽酮樹脂，酚基矽酮樹脂，和矽酮醇醇樹脂·依照所選擇之塗覆方法可選擇和使用適當的樹脂· 就本發明中用以安排光吸收構件在預定位置之方法而言，可使用濺鍍法，真空沉積法，CVD法等•在這些方法中，—無機光吸收層在一基底上就形成有機光吸收層之方法而言，可使用一旋轉塗覆本紙張尺度埴用中國國家樣準（CNS ) A4規格（210X297公釐) -12 - A7 B7 經濟部中夹標準局貝工消费合作社印製五、發明説明（ 10) 法 9 屏幕塗層法 » 網版印刷法 > 或例如偏置印刷之轉換方法 9 或使用散佈器之一塗覆方法等 • 以下詳細說明測鍍法 « \ 圖 3 爲以濺鍍法形成含有金屬氧化物在基底 1 0 2 之刖和側表面上之模形成裝置之圖〇如圖 3 所示 9 室含有 — 加熱器 2 0 1以加熱基底 1 0 2 9 一保持器 2 0 2 以保持基底 1 0 2 9 和一靶 ( T a 2 〇 3 ) 1 0 5 當成光吸收層 3 0 1 設置在基底 1 0 2 之前和側表面 0 設定保持器 2 0 2 以使光電轉換元件表面 1 0 1 之相對表面面對靶 1 0 5 9 室以泵吸室至約 1 X 1 0 -β Τ 0 r r之真空〇在此真空下 > 填入 A Γ 氣體至室中至 5 m T 0 R R 0 而後 t 加熱器 2 0 1 充能以加熱基底 1 0 2 並由一電源供 rrfag if思器 P W akg 應用一高頻電壓以引起在靶 1 0 5 和基底 1 0 2 間之輝光放電藉以在基底 1 0 2 之目丨J 和側 ( 端面 ) 表面上形成光吸收層 3 0 1 0 以下參考圖 4 A 和 4 C 說明本發明中使用之光吸收靥之塗覆方法和印刷方法〇在此例中 ♦ 光吸收層形成在 — 玻璃基底之前和側表面上 • 圖 4 A 顯示如何使用在塗覆方法中之噴霧器 2 0 3 以將 —. 黑色樹脂 1 0 6 m 用至玻璃基底 1 0 2 之前和側表面圚 4 B 爲如何使用一刷子 2 0 4 以將黑色樹脂 1 0 6 應用至玻璃基底 1 0 2 之前和側表面 • 請先閲讀背 Λ 之注意一 h 頁訂本紙張又度遢用中國國家揉準（CNS ) A4规格（210X297公釐） -13 - 五、發明説明（ 11 A7 B7 經濟部中央標率局負工消费合作社印装圖4 C爲如何使用一網版印刷板2 0 5以將黑色樹脂 1 0 6應用至基底1 〇 2之前表面。結合多數玻璃基底至了共同基礎之方法包括藉由上述之—方法，即，測鍍法，印刷法，如塗覆法，在玻璃基底之前和側表面形成一光吸收層之後，結合多數之基底至含有黏著劑之基礎之方法。如果光吸收餍亦當成一黏著劑時’可使用下述之方法。在此方法中，在光吸收黏著劑應用至基礎之後表面後，多數之基底安裝在基礎上，且黏著劑硬化β 以下說明本發明之光電轉換元件之構造g 圖5 A至5 C爲給定之光學感應器之構^謝讽5 A至 5 C爲習知光學感應器之構造。圖5<至5 南種光學感應器之層構造。圖5 C爲共同對這些典型驅動方法。圖5 A和5 B之感應器爲光二極體型光學感應器。在圖5A中之感應器爲P I N型。圖5 B之感應器爲肖特基型。在圖5A中之感應器包括一絕緣基底21，一下電極22，一 p型半導體層（P層）23，一本質半導體層 (i層）24，一 η型半導體層（ri層）25)，和一透明髦極2 6 ·除了 Ρ層2 3外，在圖5 Β中之感應器具有和圖5 Α中之感應器相同的構件。在圖5 Β之肖特基型感應器中，選擇適當的材料以用於一下電極2 2 ,以形成一肖特基屏蔽，因此*不會有電子由下電極22注入i層 2 4。圖5 C中的構造包括一光學感應器1 0當成表示上述光學感應器之符號，一電源供應器1 1，和例如電流放請先閲背 A 之注— h 裝訂本纸張尺度適用中國國家梯準（CNS ) A4规格（210X297公釐） -14 - _B7_ 五、發明説明丨12) 經濟部中央揉準局貝工消费合作社印装大器之偵測單元1 2 ·在光學感應器1 0中以* C#表示之方向相當於在圖5A和5 B中之透明電極2 6側，其中以表示之方向相關岭下電極2 2側。電源供應器 1 1設定成應用一正電壓至相關於側之、C#側》以下簡單說明此種構造之操作。當光由在圖5 A和5 B之箭頭所示之方向入射，並到達i層2 4時，光受到吸收以產生電子和電洞。由於電場由電源供應器1 1應用至 i層24，電子通過* C'側，亦即，η層25，並移動至透明電極26，而電洞移動至'A#側，亦即，下電極 22。亦即，光電流入光學感應器10中。當沒有光入射時，在i層24中不會產生電子或電洞。此外，η層25 當成一電洞注流入防止層，和在圖5 Α之Ρ I Ν型感應器中之P層2 3和在圖5 B之肖特基型感應器中之肖特基層當成電子注入防止層。因此，在透明電極2 6中之電洞和在下電極2 2中之電子無法移動，且因此無電流流動。因此，依照入射光之存在與否而發生電流之改變。如果此改變由圖5 C之偵測單元1 2所偵測時，則此構造操作當成一光學感應器。但是，藉由使用上述習知光學感應器時，則相當難以低成本製造具有髙S/N比之光電轉換裝置。其論據之理由如下。第一個理由爲在圖5A中之ΡIN型感應器和在圖5 B中之肖特基型感應器在兩部份皆需要注入防止層。在圖 5 A之Ρ I N型感應器中，當成注入防止層之η層2 5需本紙張尺度通用中國國家標率（CNS ) Α4規格（210X297公釐） -15 - 第85U1748號專利申請案中文說明書修正頁 A7 B7 民國87年6月1 五、發明説明（） 13 要具有引導電子至透明m棰2 6之特性和防止電洞注入i 厝2 4之特性•缺少任一特性會導致光電流之降低•或在無入射光之幫流（暗電流）中之產生或增加，如此導致 S/N比之下降•此暗電流本身視爲雜訊，並包括構爲衝擊雜訊之振盪，亦即，量子雜訊•即使此種暗電流由值測單元1 2移去，伴隨暗電流而來之置子雜訊亦無法降低· 一般而言，爲了改善上述之特性，用於i曆24和η層2 5 之形成條件和在形成這些層之後之退火條件必需是較佳的 •雖然介於電子和電洞間之關係和上述之關係相反，但是，另一個注入防止册之Ρ層2 3需要具有和上述相同的特性，用於Ρ層23之相關條件亦必需是較佳化•通常，用於 η靥之最佳條件和用於ρ層之最佳條件不同，且相當難以同時滿足兩層之最佳條件•亦即*在單一光學感應器中之兩部份上所誓之注入防止層雖以形成具有高S/N比之光學感應器•此亦適用於在圖5 Β中之肖特基型感應器· 經濟部中央橾準局貝工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) 圖5 Β中之肖特基型感應器使用肖特基屏蔽靥當成一注入防止層·此屠使用在工作功能中介於下電捶2 2和i 層2 4間之差異•因此，用於下電捶2 2之材料釁限，且介面之局部位準會顯著的影響肖特基屏蔽層之特性•如此相當難以滿足用於層之條件•亦有研究指出在介於"^電極 2 2和i層2 4間形成具有約1 Ο 0 A厚之薄矽或金屬氧化物或氮化物膜以改善肖特基屏蔽潘之特性•此種構造使用隧道效應以引導竃洞至下電極2 2，和改善防止電子注入i靥2 4之效果•此種構造亦使用在工作功能中之差異本紙張尺度逍用中國國家橾準（CNS ) A4規格（210X297公釐） ! A7 卜‘―，正 B7_ I 補亦▲ 五、發明説明（) 14 ，且因此，用於下電極2 2之材料亦有所限制。再者，由於此構造使用相反的性質，亦即，藉由除道效應防止電子之注入和電洞之移動，因此•氧化或氮化膜受限至具有約 1 Ο 0A之厚度之非常薄的膜•再者，由於難以控制厚度和膜之品質，生產率會降低· 在兩部份上需要注入防止層會導致低的生產率和高的成本，其理由如下•有蓥於上述之特性，此兩注入防止層非常重要•因此，如果在一或兩厝中由灰塵等產生缺陷時，則無法獲得窬用於光學感應器之良好特性· 經濟部中央標準局貝工消费合作社印聚 (請先閲讀背面之注f項再填寫本頁) 以下參考圖6說明第二個理由。圖6爲以薄半導體靥製成之場效電晶體（TFT)之層構造。TFT有時使用當成形成光電轉換裝置之控制單元之一部份。在圚6中，和圓5 A和5 B中相同的部份以相同的參考數字表示* TFT包括一閘絕緣膜2 7和一上電極6 0 ·以下順序的說明形成TFT之方法•下電極22當成一閘電極（G) ，一閘絕緣膜27，一 i屠24，一 η曆25 ·和上電極 6 0當成源和汲極（S和D )，乃顒序的形成在一絕緣基底21上·上電極60受蝕刻以形成源和汲極·而後，η 層2 5受蝕刻以形成一通道部份· TFT之特性可由介於閘絕緣膜2 7和i層2 4間之介面之狀態而輕易的嚷響。一般而言*爲了避免介面之污染，這些餍連績的沉積在相同的真空中。此種層結構在形成習和光學感應器在和T F T形成所在之相同基底上會引起一些問題，如此導致成本之增加和本紙眛尺度適用中國國家標车（CNS ) A4规格（210X297公釐> -17 - 經濟部中央揉準局真工消费合作社印装 A7 B7 五、發明説明（15) 特性之破壤*此乃因爲在圓5 A和5 B中之習知感應器之層構造和TFT之層構造不同。更特別而言，在圖5A中之P I N型感應器具有電f/p層/ i層/η靥/電極構造，和在圖5 Β中之肖特基型感應器具有電極/ i層/η 靥/電極構造。和此相反的是，TFT具有電極/絕緣層 / i層/η層/電極構造。亦即，這些構造無法形成在相同的處理中。複雜之處理會導致生產率之下降和成本之上升。爲了共用i靥/η層，需要蝕刻處理以用於閘絕緣膜 27或ρ層23。因此，當成注入防止厝之ρ層23 (其爲上述光學感應器之一重要層）和i層2 4無法形成在相同真空中，或介於閘絕緣膜2 7 (其對於TFT相當重要 )和i層2 4間之介面在蝕刻閘絕緣膜時會受到污染，如此導致在特性上之破壊和在S/N比上之降低。有鑒於所形成之層之順序，此種構造，亦即具有氧化For the type of pigments used, the following organic pigments can be used: nitro colorants, azo pigments, indanthrene, thioindigo perynone, brahman, diazepam, sleeping DY steep, sedge flower Green, different air, quinophth.l one-based pigments, etc. The following inorganic pigments can also be used: black, chrome yellow, cadmium yellow, cl over mill-ion (orange), red iron oxide, vermilion oxide, red lead, chrome red, mineral purple, etc. Cobalt Blue, Cobalt Green, Chromium Oxide (Green), Viridian (Green), etc. 4 According to the oscillation wavelength of phosphorus, by appropriately selecting the above pigments, a light absorbing member with a desired hue or Black light absorbing member. Printed by the Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs For the resin used in the light absorbing member in the present invention, an epoxy resin, an acrylic resin, and a silicone resin can be used. For an epoxy resin, BAE can be used Epoxy resins act as a condensate of bisphenol A and chloromethoxypropane, which is actually the most commonly used. In addition, for resins containing this resin as the main component, the following resins can be used: bisphenol F, its homologues, halogenated resins, by introducing an epoxy group into a polyol, a dimer acid, and a trimer Acid, or resin obtained from novolac resin containing chloromethoxetane, by introducing epoxy group into polymer paper with peroxides. Applicable to standard papers _ due to the family standard rate (CNS) A4 specification (210X297 Mm) A7 _. B7_ V. Description of the invention 丨 9) Resin derived from olefin, and epoxy resin called cycloaliphatic epoxy resin. The use of B A E epoxy resin has been accompanied by sufficient research on the physical properties of the hardening material of each hardener. Qin here has sufficient information on B A E epoxy resin. And therefore this material can be used safely. Regarding the hardener, one of the following hardeners can be used to obtain an epoxy resin having characteristics suitable for a coating step: diethylenetriamine, n-aminoethylpiperazine, benzylmethylamine, toluene Diamine, diaminodiphenylmethane, diaminodiphenylethane, polyamidoamine resin, diaminofluorene, boron trifluoride • monoethylamine, methylimidazole, phthalic anhydride, hexahydrophthalic anhydride , Methyle (hyenadic) anhydride, pyromellitic anhydride, chloren-dic (anhydride), etc. • * As far as acrylic resins are concerned, there are three types of resins with different polymerization types: entrapped polymers obtained by polymerizing monomers or slugs, granular resins obtained by suspension polymerization, and the use of an extractor. A granular resin obtained from a powder formed by suspension polymerization. One of these resins can be selected and used which is most suitable for a coating step. In the Ministry of Economic Affairs, the Ministry of Economic Affairs and the Ministry of Economic Affairs of the People's Republic of China are responsible for the work. «For silicone resins, methyl silicone resins using trichlorosilane and dichlorosilane, phenolic silicone resins, and silicone alcohol resins can be used. An appropriate resin can be selected and used in accordance with the coating method selected. For the method for arranging the light absorbing member in a predetermined position in the present invention, a sputtering method, a vacuum deposition method, a CVD method, etc. can be used. Medium—Inorganic light absorbing layer on a substrate. For the method of forming an organic light absorbing layer, a spin coating of this paper can be used, using China National Standard (CNS) A4 specification (210X297 mm) -12- A7 B7 Printed by the Shell Standard Consumer Cooperative of the Ministry of Economic Affairs of the People's Republic of China. 5. Description of the invention (10) Method 9 Screen coating method »Screen printing method> Or conversion method 9 such as offset printing or using one of the spreaders Coating methods, etc. • The plating method is described in detail below. Figure 3 shows the formation of a metal oxide containing substrate on the substrate 1 2 by sputtering. A diagram of the mold forming device on the surface. As shown in FIG. 3, the 9-chamber contains-a heater 2 0 1 to heat the substrate 1 0 2 9 a holder 2 0 2 to hold the substrate 1 0 2 9 and a target (T a 2 〇3) 1 0 5 as the light absorbing layer 3 0 1 is placed before the substrate 1 2 and the side surface 0 is set to the holder 2 0 2 so that the opposite surface of the photoelectric conversion element surface 1 0 1 faces the target 1 0 5 9 chamber Pump the chamber to a vacuum of about 1 X 1 0 -β Τ 0 rr. Under this vacuum, fill A Γ gas into the chamber to 5 m T 0 RR 0 and then the heater 2 0 1 is charged to heat The substrate 1 0 2 is supplied by a power source rrfag if the thinker PW akg applies a high-frequency voltage to cause a glow discharge between the target 105 and the substrate 10 2 to cause the target 102 and the side (end face of the substrate 102). ) A light absorbing layer is formed on the surface 3 0 1 0 The coating of the light absorbing chirp used in the present invention is described below with reference to FIGS. 4A and 4C. Method and printing method 〇 In this example ♦ A light absorbing layer is formed before and on the side surface of the glass substrate. Fig. 4A shows how to use the sprayer 2 0 3 in the coating method to apply-. Black resin 1 0 6 m Used before the glass substrate 1 0 2 and the side surface 圚 4 B is how to use a brush 2 0 4 to apply the black resin 1 0 6 to the glass substrate 1 0 2 before and the side surface • Please read the note of the back Λ first. The bound pages of the paper again use the Chinese National Standard (CNS) A4 specification (210X297 mm) -13-V. Description of the invention (11 A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Work Cooperative, Figure 4C A screen printing plate 2 0 5 was used to apply the black resin 10 6 to the front surface of the substrate 1 2. The method of combining most glass substrates to a common basis includes, by the methods described above, namely, a plating method, a printing method, such as a coating method, combining a majority of substrates before and after forming a light absorbing layer on the glass substrate and side surfaces. To the foundation containing the adhesive. If the light-absorbing fluorene is also used as an adhesive ', the following method can be used. In this method, after the light-absorbing adhesive is applied to the surface of the foundation, most of the substrate is mounted on the foundation, and the adhesive is hardened. Β The structure of the photoelectric conversion element of the present invention will be described below. G 5A to 5C are given Structure of Optical Sensors ^ Xie Wei 5 A to 5 C are the structures of conventional optical sensors. Fig. 5 < to 5 layer structure of the South optical sensor. Figure 5C shows these typical driving methods in common. The sensors in Figures 5 A and 5 B are photodiode-type optical sensors. The sensor in FIG. 5A is a P I N type. The sensor in Figure 5B is a Schottky type. The inductor in FIG. 5A includes an insulating substrate 21, a lower electrode 22, a p-type semiconductor layer (P layer) 23, an intrinsic semiconductor layer (i layer) 24, and an n-type semiconductor layer (ri layer) 25), And a transparent pole 2 6 · Except for the P layer 2 3, the sensor in Fig. 5B has the same components as the sensor in Fig. 5A. In the Schottky type sensor of FIG. 5B, an appropriate material is selected for the lower electrode 2 2 to form a Schottky shield, so * no electrons are injected into the i-layer 2 4 from the lower electrode 22. The structure in FIG. 5C includes an optical sensor 10 as a symbol representing the above-mentioned optical sensor, a power supply 11, and, for example, current reading, please read the note of back A—h binding This paper size is applicable to China Ladder standard (CNS) A4 specification (210X297 mm) -14-_B7_ V. Description of the invention 丨 12) Detection unit of the printed device of the Central Bureau of the Ministry of Economic Affairs of the Bayer Consumer Cooperative 1 2 · In the optical sensor 1 0 The direction indicated by * C # in the middle corresponds to the transparent electrode 26 side in Figs. 5A and 5B, and the direction indicated by the direction corresponds to the side of the lower electrode 22. The power supply 11 is set to apply a positive voltage to the relevant side, the C # side. The operation of this structure is briefly explained below. When light is incident from the directions shown by the arrows in Figs. 5A and 5B and reaches the i-layer 24, the light is absorbed to generate electrons and holes. Since the electric field is applied from the power supply 11 to the i-layer 24, the electrons pass through the * C 'side, that is, the n-layer 25, and move to the transparent electrode 26, and the hole moves to the' A # side, that is, the lower electrode 22 . That is, the photoelectric flows into the optical sensor 10. When no light is incident, no electrons or holes are generated in the i-layer 24. In addition, the η layer 25 serves as a hole injection prevention layer, and the P layer 23 in the PI and N type sensors in FIG. 5A and the Schottky layer in the Schottky type sensors in FIG. 5B. Electron injection prevention layer. Therefore, the holes in the transparent electrode 26 and the electrons in the lower electrode 22 cannot move, and therefore no current flows. Therefore, a change in current occurs depending on the presence or absence of incident light. If the change is detected by the detection unit 12 in Fig. 5C, the construction operation is regarded as an optical sensor. However, when the conventional optical sensor is used, it is quite difficult to manufacture a photoelectric conversion device having a 髙 S / N ratio at low cost. The rationale for this argument is as follows. The first reason is that the PIN-type sensor in FIG. 5A and the Schottky-type sensor in FIG. 5B require injection prevention layers in both parts. In the P IN type sensor of Figure 5A, the η layer as the injection prevention layer 2 5 is required to be the standard of the paper. The standard is China National Standards (CNS) A4 (210X297 mm). -15-85U1748 Patent Application Chinese Correction page of the manual A7 B7 June 87, Republic of China 5. Description of the invention (13) It must have the property of guiding electrons to transparent m 棰 2 6 and the feature of preventing hole injection into i 厝 2 4 • The absence of any feature will cause photocurrent Decrease or increase or decrease in the incident current (dark current), which causes the S / N ratio to decrease. This dark current itself is considered as noise and includes oscillations that constitute shock noise. That is, quantum noise • Even if this dark current is removed by the value measurement unit 12, the sub-noise accompanying the dark current cannot be reduced. Generally speaking, in order to improve the above characteristics, it is used for i calendar 24 and The formation conditions of the η layer 2 5 and the annealing conditions after the formation of these layers must be better. • Although the relationship between the electrons and the holes is opposite to the above relationship, another P layer 2 of the injection prevention book 2 3 Need to have the same characteristics as above for The relevant conditions for layer 23 must also be optimized. • In general, the optimal conditions for η 靥 and the optimal conditions for ρ layer are different, and it is quite difficult to satisfy the optimal conditions for both layers at the same time. Although the injection prevention layer on the two parts of the optical sensor is used to form an optical sensor with a high S / N ratio, this also applies to the Schottky type sensor in Figure 5B. Central Ministry of Economic Affairs 经济Printed by the Quasi-Beige Consumer Cooperative (please read the precautions on the back before filling out this page) Figure 5 The Schottky type sensor in Β uses a Schottky shield, which acts as an injection prevention layer The difference between power down 捶 2 2 and i layer 2 4 • Therefore, the material used for power down 捶 2 2 and the local level of the interface will significantly affect the characteristics of the Schottky shielding layer. • So equivalent Difficult to meet the conditions for the layer • Some studies have pointed out that a thin silicon or metal oxide or nitride film with a thickness of about 100 A is formed between the " ^ electrode 2 2 and the i layer 2 4 to improve the Schott Characteristics of the base shield Pan • This construction uses a tunnel effect to guide the cavity to the lower electrode 2 2, and the effect of improving the prevention of electron injection i 靥 2 4 • This structure is also used in the difference in work function The paper size is in accordance with China National Standards (CNS) A4 specifications (210X297 mm)! A7 Bu '― ,, Positive B7_ I complement also ▲ V. Description of the invention () 14, and therefore, the material used for the lower electrode 2 2 is also limited. Furthermore, since this structure uses the opposite property, that is, the injection of electrons and the movement of holes are prevented by the channel removal effect, the oxide or nitride film is limited to a very thin film having a thickness of about 100 A Film • Furthermore, it is difficult to control the thickness and the quality of the film, and the productivity will be reduced. The need to inject a protective layer on both parts will result in low productivity and high cost. The reasons are as follows. The injection prevention layer is very important. Therefore, if a defect is caused by dust or the like in one or two frames, the good characteristics of the optical sensor cannot be obtained. (Note f on the back is to be completed on this page.) The second reason will be explained below with reference to FIG. 6. FIG. 6 is a layer structure of a field effect transistor (TFT) made of a thin semiconductor semiconductor. TFTs are sometimes used as part of a control unit forming a photoelectric conversion device. In 圚 6, the same parts as in circles 5 A and 5 B are denoted by the same reference numerals. * TFT includes a gate insulating film 27 and an upper electrode 6 0. The following sequence describes the method of forming a TFT. Lower electrode. 22 as a gate electrode (G), a gate insulating film 27, a gate 24, a η calendar 25, and an upper electrode 60 as a source and a drain (S and D), which are sequentially formed on an insulating substrate 21 The upper electrode 60 is etched to form a source and a drain electrode. Then, the η layer 25 is etched to form a channel portion. The characteristics of the TFT can be determined by the interface between the gate insulating film 27 and the i layer 24. The state sounded easily. In general * In order to avoid contamination of the interface, these successive results are deposited in the same vacuum. This layer structure will cause some problems in the formation of Xi and optical sensors on the same substrate as the TFT, which will lead to an increase in cost and the paper size applicable to the Chinese National Standard Car (CNS) A4 specification (210X297 mm > -17-A7 B7 printed by Real Consumer Cooperatives of the Central Bureau of the Ministry of Economic Affairs V. Description of the invention (15) The characteristics are broken * This is because of the layer structure and TFT of the conventional sensors in circles 5 A and 5 B The layer structure is different. More specifically, the PIN type sensor in FIG. 5A has an electrical f / p layer / i layer / η 靥 / electrode structure, and the Schottky type sensor in FIG. 5B has electrodes. / i layer / η 靥 / electrode structure. In contrast, a TFT has an electrode / insulating layer / i layer / η layer / electrode structure. That is, these structures cannot be formed in the same process. Complicated processes can cause Decrease in productivity and increase in cost. In order to share the i 靥 / η layer, an etching process is required for the gate insulating film 27 or the ρ layer 23. Therefore, the ρ layer 23 (which is one of the above-mentioned optical sensors) is implanted to prevent 厝Important layer) and i layer 2 4 cannot be formed in the same vacuum, or The interface between the gate insulating film 27 (which is very important for the TFT) and the i-layer 24 is contaminated when the gate insulating film is etched, which leads to a deterioration in characteristics and a reduction in the S / N ratio. The order of the layers formed, this structure, which has oxidation

或氮化膜形成在下電極2 2和i層2 4間以改善在圔5 B 中之肖特基型感應器之特性，乃和圖6中之構造相同。但是，如上所述，氧化或氮化膜需要具有約1 0 0A之厚度，且因此難以使用其當成一閘絕緣膜。圖7爲藉由實驗在相關於閘絕緣膜之T F T之生產率上所獲得之結果。在閘絕緣膜之厚度爲1 Ο Ο 0A之下，生產率陡峭的下降。在 8 Ο 0A之厚度上，生產率約3 0%。厚度爲5 Ο 0A時，生產率爲0 % ·厚度爲2 5 0A時，甚至TFT之操作亦無法偵測•此種資料清楚的顯示相當難以使用光學感應器之氧化或氮化膜之除道效應當成T F T之閘絕緣膜（其本纸法尺度適用中國國家標準（CNS ) A4规格（210X297公釐） ~_~ -18 - (請先閲讀背面之注意事項再3本頁)Or a nitride film is formed between the lower electrode 22 and the i-layer 24 to improve the characteristics of the Schottky-type inductor in 圔 5B, which is the same structure as that in FIG. However, as described above, the oxide or nitride film needs to have a thickness of about 100 A, and therefore it is difficult to use it as a gate insulating film. Fig. 7 is a result obtained by experiments on the productivity of T F T related to the gate insulating film. When the thickness of the gate insulating film is below 100 Å, the productivity drops sharply. With a thickness of 8 0 0A, the productivity is about 30%. When the thickness is 5 0 0A, the productivity is 0%. When the thickness is 2 0 0A, even the operation of the TFT cannot be detected. This kind of data clearly shows that it is very difficult to use the optical sensor's oxidation or nitride film to remove the channel. Used as TFT's gate insulation film (the size of the paper method is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ _ ~ -18-(Please read the precautions on the back and then 3 pages)

訂 A7 B7 經濟部中央樣率局負工消费合作社印裝五、發明説明（ 16) 需要隔離電子和電洞 ) 9 此外 9 雖然未顯示 f 具有良好特性和小 1: 漏電流之電容元件 ( 以下稱爲電容 ) » 其爲需用以獏得電荷或電流之稹分值之元件，如同習知之光學感應器之構造 > 難以以相同的構造形成· 由於電容欲儲存電尙在兩電極之間，因此 m 要用以防止電子和電洞之移動之層當成介於電極間之中介層〇但是，習知的光學感應器只使用介於電極間之一半導體厝〇因此，相當難以獲得具有良好特性之中介層，其爲熱穩定且具有小的漏電流 0 如果一 T F T 和 — 電容 ( 其爲光電轉換裝置之重要元件 ) 在處理和特性上展現不良的匹配時需要許多複雜之步驟以形成具有許多 — 維或二維光學感應 Act% 器之一光學系統並設計成循序的偵測光學訊號 0 因此生產率非常低如此導致以低成本形成髙效能且多功能裝置時非常嚴重之問題〇下述之光電轉換裝置可解決上述之問題 > 且適於使用在本發明中〇圖 1 1 爲在本發明中使用之光電轉換裝置之整體構造之電路圖〇圖9 A 爲相關於光電轉換裝置之 — 圖素之構成元件之平面圖· 匾 9 B 爲沿圖 9 A 之線 9 B — 9 B 而截取之截面圖〇參考圖 8，此裝置包括光電轉換元件 S 1 1 至 S3 3 0 每個元件之下和上電極側分別指示爲 % G 歸和 % D " 0 該裝置亦包括儲存電容 C 1 1 至 C 3 3 轉換 T F T 1 1 訂本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐）Order A7 B7 Printed by the Central Sample Rate Office of the Ministry of Economic Affairs of the Consumers Cooperative Cooperative V. Invention Description (16) Need to isolate electrons and holes) 9 In addition 9 Although f is not shown with good characteristics and small 1: Capacitor element with leakage current (below (Referred to as a capacitor) »It is a component that needs to obtain the value of the charge or current, like the structure of a conventional optical sensor > It is difficult to form it with the same structure. Since the capacitor wants to store electricity between two electrodes Therefore, m should be used as a layer to prevent the movement of electrons and holes as an interposer between the electrodes. However, the conventional optical sensor uses only a semiconductor interposed between the electrodes. Therefore, it is quite difficult to obtain Characteristics of the interposer, which is thermally stable and has a small leakage current. If a TFT and a capacitor (which is an important element of a photoelectric conversion device) are being processed When showing poor matching with characteristics, many complicated steps are required to form an optical system with many one-dimensional or two-dimensional optical sensing Act% devices and designed to sequentially detect optical signals. Therefore, the productivity is very low, which leads to low cost. A very serious problem when forming a high-efficiency and multifunctional device. The following photoelectric conversion device can solve the above problems and is suitable for use in the present invention. Figure 1 1 is the entire photoelectric conversion device used in the present invention. Circuit diagram of the structure. Figure 9A is a plan view of the components of the photoelectric conversion device—pixels. The plaque 9B is a cross-sectional view taken along the line 9B-9B of FIG. 9A. Referring to FIG. 8, this device Including photoelectric conversion elements S 1 1 to S3 3 0 The lower and upper electrode sides of each element are indicated as% G and% D " 0 Means also includes storage capacitor 11 C A4 size conversion to C 3 3 T F T 1 1 under this sheet with scales Bu Chinese National Standard (CNS) (210X297 mm)

-19 - 五、發明説明（ 17 A7 B7-19-V. Description of Invention (17 A7 B7

至T 3 3，一讀取電源供應器V 和一更新電源供應器經濟部中央揉準局貝工消费合作社印笨To T 3 3, one reads the power supply V and one updates the power supply.

Vg ·這些電源供應器分別經由開關SWs和SWg而連接至所有光電轉換元件S 1 1至S 3 1之G電極。開關 SWs經由一反向器連接至一更新控制電路RF，且開關 SWg直接連接至更新控制電路RF·開關SWg受控制以在更新間段中保持ON · —圔素由一光電轉換元件，一電容和一T F T構成·來自每個圖素之訊號输出經由一訊號線SIG連接至一偵測稹體電路IC。在由本發明人先前提出之光電轉換裝置中，全部九個圖素分成三塊，來自每塊之三個圖素之输出同時經由每個訊號線SIG傅送，且該输出由偵測稹髖電路I C循序的轉換成输出（ Vout)。在每塊中之三個圖素安排在水平方向，且三個塊循序的安排在垂直方向，藉以二維的安排圇素。包合在圖8中之虛線內之部份形成在具有大區域之單一絕緣基底上•圓9 A爲相關於上述部份之第一圚素之部份之平面圖。圖9B爲沿圖9A之線9 B — 9B所截取之截面圖。此構造包括光電轉換元件S 1 1 ，TFT， T11 ，電容C11，和訊號線SIG。在由申請人先前所提出之光竜轉換裝置中，電容C 1 1和光電轉換元件S 1 1並不互相隔離，且電容C 1 1藉由增加光電轉換元件 S 1 1之電極之區域而形成。由於在此實施例中之每個光電轉換和每個電容具有相同的層構造，可使用此種形成處。此即由本申請人先前所提出之光電轉換裝置之特性。此外，被動氮化矽膜（S i N)和例如碘化絶（C s I )之 (請先閎讀背面之ii-*r事項 --裝-- 再f 訂本纸張尺度埴用中國國家揉準（CNS ) A4规格（210X297公釐） -20 - A7 B7 幻Η负l〇修正補充, 五、發·明（18) 磷光物形成在每個鼷索上•當X射_入射在麵素上時* X 射線由磷光物（c s I )轉換成光（由虛線箭頭所表示），且光入射在光電轉換元件上•以此方式，磷光物當成一光轉換器以接收具有給定波長之光和發射具有不同波長之光· 以下參照圖8至1 0說明光電轉換裝置之操作，圖 1 0爲圖8中之裝置之操作之時間圓。經濟部中央標準局員工消費合作社印家 (讀先閲讀背面之注意事項再填寫本頁)Vg · These power supplies are connected to the G electrodes of all the photoelectric conversion elements S 1 1 to S 3 1 via switches SWs and SWg, respectively. The switch SWs is connected to an update control circuit RF via an inverter, and the switch SWg is directly connected to the update control circuit RF. The switch SWg is controlled to remain ON during the update interval. The element is a photoelectric conversion element, a capacitor Composition with a TFT. The signal output from each pixel is connected to a detection circuit IC through a signal line SIG. In the photoelectric conversion device previously proposed by the present inventor, all nine pixels are divided into three blocks, and the output of the three pixels from each block is simultaneously transmitted through each signal line SIG, and the output is detected by the hip circuit The IC sequentially converts to an output (Vout). The three pixels in each block are arranged horizontally, and the three blocks are sequentially arranged in the vertical direction, so that the pixels are arranged in two dimensions. The part enclosed in the dotted line in Fig. 8 is formed on a single insulating substrate with a large area. The circle 9 A is a plan view of the part of the first element related to the above part. Fig. 9B is a cross-sectional view taken along line 9B-9B of Fig. 9A. This structure includes a photoelectric conversion element S 1 1, a TFT, T11, a capacitor C11, and a signal line SIG. In the optical-to-electrical conversion device previously proposed by the applicant, the capacitor C 1 1 and the photoelectric conversion element S 1 1 are not isolated from each other, and the capacitor C 1 1 is formed by increasing the area of the electrode of the photoelectric conversion element S 1 1 . Since each photoelectric conversion and each capacitor in this embodiment has the same layer structure, this formation can be used. This is the characteristic of the photoelectric conversion device previously proposed by the applicant. In addition, passive silicon nitride film (S i N) and, for example, iodized (C s I) (please read the ii- * r matters on the back first-installation-and then f). National Standard (CNS) A4 (210X297 mm) -20-A7 B7 Phantom Negative 10 Correction Supplement, V. Fat (18) Phosphors are formed on each cable • When X-ray_incidence on When it is on a surface * X-rays are converted into light by the phosphor (cs I) (represented by the dotted arrow), and the light is incident on the photoelectric conversion element. In this way, the phosphor acts as a light converter to receive Wavelength of light and emission of light with different wavelengths · The operation of the photoelectric conversion device will be described below with reference to FIGS. 8 to 10, and FIG. 10 is a time circle of the operation of the device in FIG. (Read the precautions on the back before filling this page)

首先，高位準訊號由移位暫存器SR1和SR2應用以控制線gl至g3和sgl至sg3·結果，轉換 TFT ΤΙ 1至T 33和開關Ml至M3啓動，且所有光電轉換元件S 1 1至S 3 3之D電極設定至GND電位 (因爲積體偵測器Amp之输入端設定至GND電位）· 同時，更新控制電路RF输出一髙位準訊號以啓動開關 SWg。結果，光電轉換元件SI 1至S33之G «極由更新電·源供應器V g設定至一正電位•而後，所有的光電轉換元件S 1 1至S 3 3設定在更新模式中以用於更新· 當更新控制電路R F输出一低位準訊號以啓動開關SW s ，所有光電轉換元件S 1 1至S 3 3之G電極由讀電源供應器V s設定至一負電位•結果，所有的光電轉換元件S 1 1至S 3 3皆設定在光電轉換模式中。同時，電喀C 1 1至C33初始化。在此狀態中，移位暫存器SR1和 SR2應用低位準訊號至控制線g 1至g 3和s g 1至 sg3 *結果，用於轉換T. FT Til至T33之開關 Ml至M3關閉，且以D C分置視之所有光電轉換元件S 本紙張尺度適用中國國家標半（CNS ) A4規格（210X297公漦） -21 - 經濟部中央樣準局Λ工消费合作杜印氧 A7 _B7_五、發明説明（19) 1 1至S 3 3之D電極設定在打開狀態•但是，D電極之電位由電容Cl 1至C33所保持•但是，此時，由於沒有X.射線入射，光並未入射在任何光電轉換元件S 1 1至 S 3 3上。因此，無光電流流動•當X射線以脈衡之型式發射，並橫過欲入射在磷光物C s I上之人體時，X射線轉換成光。此光入射在每個光電轉換元件S 1 1至S 3 3 上。此光含有人體等之內部構造之資訊。由光所產生之光電流在X射線入射後，如同電荷的儲存在電容C 1 1至C 3 3中並保持著。而後，移位暫存器SR1應用一高位準控制脈衝至控制線gl，且移位暫存器SR2應用控制脈衝至控制線s 1至s 3。結果，資料vl至v3經由轉換 TFT T11至T33之開關Ml至M3而循序的输出 •相似的，在移位暫存器SR1和SR2之控制下，其它之光學訊號循序的输出•以此方法，可獲得人體之內部構造之二維資料v 1至v 9。藉由上述之操作，可獲得靜止之影像。但是，當獲得一移動影像時，可重覆上述之操作〇在光電轉換裝置中，光電轉換元件之G電極共同的連接，且控制線受控制而經由開關SWg和SWs而設定爲更新電源供應器V g之電位和讀取電源供應器V s之電位 •因此，所有的光電轉換元件可一次切換成更新模式或光電轉換模式•因此，以每個圖素一 TF T而無需複雜控制即可獲得光學输出· 在此裝置中，九個圖素二維的安排成3 X 3矩陣，且請先閱背 ib 之注-First, the high-level signals are applied by the shift registers SR1 and SR2 to control the lines gl to g3 and sgl to sg3. As a result, the switching TFTs T 1 to T 33 and the switches M1 to M3 are activated, and all the photoelectric conversion elements S 1 1 The D electrode to S 3 3 is set to the GND potential (because the input terminal of the integrated detector Amp is set to the GND potential). At the same time, the control circuit RF output updates a level signal to activate the switch SWg. As a result, the G «poles of the photoelectric conversion elements SI 1 to S33 are set to a positive potential by the refresh power supply source V g · Then, all the photoelectric conversion elements S 1 1 to S 3 3 are set in the refresh mode for Update · When the update control circuit RF outputs a low level signal to activate the switch SW s, the G electrodes of all the photoelectric conversion elements S 1 1 to S 3 3 are set to a negative potential by the read power supply V s. As a result, all the photoelectric The conversion elements S 1 1 to S 3 3 are all set in the photoelectric conversion mode. At the same time, the electric carriages C 1 1 to C33 are initialized. In this state, the shift registers SR1 and SR2 apply the low level signals to the control lines g 1 to g 3 and sg 1 to sg3 * result, the switches M1 to M3 for switching T. FT Til to T33 are closed, and All photoelectric conversion elements viewed by DC separation S This paper size is applicable to China National Standard Half (CNS) A4 specifications (210X297 cm) -21-Central Samples Bureau of the Ministry of Economic Affairs Λ Industrial Consumption Cooperation Du Yin oxygen A7 _B7_ Description of the invention (19) The D electrodes of 1 1 to S 3 3 are set to the open state. However, the potential of the D electrode is maintained by the capacitors Cl 1 to C33. However, at this time, no X. ray is incident, and light is not incident. On any of the photoelectric conversion elements S 1 1 to S 3 3. Therefore, no photocurrent flows. • When X-rays are emitted in a pulse-balanced manner and traverse a human body to be incident on the phosphor C s I, the X-rays are converted into light. This light is incident on each of the photoelectric conversion elements S 1 1 to S 3 3. This light contains information about the internal structure of the human body and the like. The photocurrent generated by the light is stored in the capacitors C 1 1 to C 3 3 as electric charges after the X-rays are incident, and is held. Then, the shift register SR1 applies a high-level control pulse to the control line gl, and the shift register SR2 applies the control pulse to the control lines s1 to s3. As a result, the data v1 to v3 are sequentially output through the switches M1 to M3 of the switching TFTs T11 to T33. Similarly, under the control of the shift registers SR1 and SR2, other optical signals are output sequentially. In this way, Two-dimensional data v 1 to v 9 of the internal structure of the human body can be obtained. Through the above operations, a still image can be obtained. However, when a moving image is obtained, the above operations can be repeated. In the photoelectric conversion device, the G electrodes of the photoelectric conversion element are commonly connected, and the control line is controlled to be set to update the power supply via the switches SWg and SWs. The potential of V g and the potential of reading power supply V s • Therefore, all photoelectric conversion elements can be switched to update mode or photoelectric conversion mode at one time • Therefore, one TF T per pixel can be obtained without complicated control Optical output · In this device, nine pixels are arranged two-dimensionally into a 3 X 3 matrix, and please read the note of ib-

II

訂本纸張尺度適用中國國家揉率（CNS ) A4规格（210X297公釐） -22 - A7 B7 經濟部中央橾準局負工消费合作社印装- 五、發明説明< ‘ 20 ) 三個圖素資料同時轉換和输出三次* 但是 9 本發明並不受限於此 0 如果 2 0 0 0 X 2 0 0 0函素二維的安排以使每 1 \ m m 2安排有5 X 5圖素，則可獲得4 3 c m X 4 0 C m X 射線偵測器。如果此偵測器和 X 射線產生器結合‘ 9 而非與 X 射線膜結合 I 以構成 X射線裝置時 » 此裝置可 ’使用於 X 射線胸部檢査和胸部癌症檢査 « 由裝置而來之输出可即時的顯示在一 C R T 上〇此外 > 此输出亦可轉換成數位寳料且依照本發明 9 可使用一電腦以執行資料之影像處理 » 以將其轉換成 — 输出〇再者此資料亦可儲存在磁光碟中且亦可即時的檢索以往之影像偵測器之靈敏 1 度高於膜之 m 敏度，因此 9 可獲得在人體上幾乎無效果之弱 X 射線之清晰影像。圖 1 1 和 1 2爲具有 2 0 0 0X 2 0 0 0 圖素之偵測器之構造之平面圖。當形成具有 2 0 0 0 2 0 0 0之偵測器時包含在圖8中之虛線內之部份中之元件數目可在垂直和水平方向增加。但是在此例中需要 2 0 0 0 控制線亦即線g 1至 S 2 0 0 0和 2 0 0 0 訊號線 S I G 亦即，線s i S 1 至 S i g 2 0 0 0 0 此外，移位暫存器 S R 1和偵測積體電路 I C 需要執行 2 0 0 0 訊號之控制 / 處理，且，因此 » 該裝置之尺寸會增加。如果此種處理使用一晶片元件執行時 9 —· 晶片之尺寸會變成非常大 • 如此導致在生產率和成本等上之缺點 0 有蓥於前述之說明 » 2 0 0 0個移位暫存器 SR 1 可分割成 2 0個晶片 ( S R 1 — HSR 1 — 2 0 )* 每個皆包括 1 0 0 個訂本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）The size of the paper is applicable to China's national rubbing rate (CNS) A4 specification (210X297 mm) -22-A7 B7 Printed by the Consumers 'Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs-V. Description of the invention <' 20) Three drawings The element data is converted and output three times at the same time * But the invention is not limited to this. If 2 0 0 0 X 2 0 0 0, the two-dimensional arrangement of the elements is such that there are 5 X 5 pixels per 1 mm 2 arrangement. You get a 4 3 cm X 4 0 C m X-ray detector. If this detector and X-ray generator are combined with '9 instead of X-ray film to form an X-ray device »This device can be used for X-ray chest examinations and chest cancer examinations« The output from the device can be Real-time display on a CRT. In addition, this output can also be converted into digital treasures and according to the invention 9 a computer can be used to perform the image processing of the data »to convert it to-output. O this data can also be Stored in a magneto-optical disc and can also retrieve the sensitivity of previous image detectors in real time 1 degree higher than the m sensitivity of the film, so 9 can obtain clear images of weak X-rays that have almost no effect on the human body. Figures 11 and 12 are plan views of the structure of a detector with 20000x2000 pixels. When forming a detector with 20000 2 0 0 0, the number of components included in the part enclosed by the dotted line in FIG. 8 can be increased in the vertical and horizontal directions. However, in this example, the 2 0 0 0 control line is needed, that is, lines g 1 to S 2 0 0 0 and 2 0 0 0. The signal line SIG is also the line si S 1 to S ig 2 0 0 0 0. In addition, the shift The register SR 1 and the detection integrated circuit IC need to perform 2 0 0 0 signal control / processing, and, therefore, the size of the device will increase. If this process is performed using a wafer element 9 — · the size of the wafer will become very large • this results in disadvantages in productivity and cost, etc. 0 due to the foregoing description »2 0 0 0 shift register SR 1 Dividable into 20 wafers (SR 1 — HSR 1 — 2 0) * Each includes 100 pieces of paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm)

-23 - A7 B7 經濟部中央揉率局貝工消费合作社印簟五、發明説明〔21 ) 移位暫存器 0 相似的 9 2 0 0 0 個偵測 m 體電路亦可分割成 2 0 個晶片 ( I C 1 至 I C 2 0 ) 9 每個包括 1 0 0個處理電路。參考圖 1 1 9 2 0 個晶片 ( S R 1 — 1 至 S R 1 — 2 0 ) 安裝在下側 ( D ) 9 而 1 0 0 控制線或 1 0 0 訊號線以接線結合連接至每個晶片 0 參考圖 1 1 其中 ( 省略連接至外部單元之說明 9 且省略開關 S W g 9 S W S 和 S W X ，霣源供 trig 應器 V S 1 t V S 2 和 R F 之說明 0 雖然由稹體電路 I C 1 至 I C 2 0 可獲得 2 0 個输出 ( V 0 U t ) 這些输出亦可經由 —開關等結合成一输出，或 2 0 個输出亦可直接的输出以受到平行的處理〇光電轉換元件形成在四個基底 1 一 1 1 - 2 1 一 3 和 1 -4 上 0 此四個基底而後結合在 — 共同基礎 2 上 9 圖 12 顯示另一構造 0 參考圖1 2 1 0 晶片 ( S R 1 一 1 至S R 1 — 1 0 ) 可安裝在左側 ( L ) 1 0 晶片 ( S R 1 - 1 1 至 S R 1 — 2 0 )安裝在右側 ( R ) > 1 0 晶片（ I C 1 至 I C 1 0 ) 安裝在上側 ( L ) » 和 1 0 晶片（ I C 1 1 至 I C 2 0 )安裝在下側 ( D ) •在此構造中，由於相關的線以 1 0 0 0 單元分佈在上 9 下，左 9 右側（ U 9 D L 和 R ) 9 在每側上之線之密度降低且在每側上之接線結合密度亦降低 » 如此導致生產率之增加 9 這些線分佈以使線 g 1 » g 3 $ S 5 … … « ♦ ♦ g 1 9 9 9 分佈在左側 ( L ) > 和線 8 2 > g 4 • g 6… « · · g 2 0 0 0 分佈在右側 ( R ) ，亦即 9 偶數控制線分佈本纸韻用中國國家揉御障（則嘯> A7 B7 22 五、發明説明（在左側（L)，和奇數控制線分佈在右側（R) ·以此種分佈，由於相關的線接線且以相等間隔安排，不會發生密度之不規則性。結果，可進一步增加生產率。如果剩餘的線以和上述相同的方式分佈在上側（L )和下側（D )時，亦是充足夠•依照另一實施例，雖然未顯示，線g 1至 glOO，g201 至 gOO ......... gl801 至-23-A7 B7 Seal of the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. 5. Description of the invention [21] Shift register 0 Similar 9 2 0 0 0 Detect m The body circuit can also be divided into 20 The chips (IC 1 to IC 2 0) 9 each include 100 processing circuits. Refer to Figure 1 1 9 2 0 chips (SR 1 — 1 to SR 1 — 2 0) are mounted on the lower side (D) 9 and 1 0 0 control lines or 1 0 0 signal lines are connected to each chip by wiring bonding 0 Reference Figure 1 1 Among them (omitting the description 9 connected to the external unit and omitting the switches SW g 9 SWS and SWX, the source is for the description of the trig responder VS 1 t VS 2 and RF 0. Although it is composed of the IC 1 to IC 2 0 20 outputs (V 0 U t) can be obtained. These outputs can also be combined into an output through a switch, etc., or 20 outputs can also be directly output for parallel processing. The photoelectric conversion element is formed on four substrates. 1 1-2 1 on 3 and 1-4 0 These four substrates are then combined on — common base 2 on 9 FIG. 12 shows another configuration 0 Refer to FIG. 1 2 1 0 wafer (SR 1-1 to SR 1 — 1 0) Can be mounted on the left (L) 1 0 chip (SR 1-1 1 to SR 1 — 2 0) can be mounted on the right (R) > 1 0 chip (IC 1 to IC 1 0) are mounted on the upper side (L) »and 10 chips (IC 1 1 to IC 2 0) are mounted on the lower side (D) • In this configuration, since the related wires are distributed in 1 0 0 0 units Up 9 down, left 9 right (U 9 DL and R) 9 The density of the wires on each side is reduced and the bonding density of the wires on each side is also reduced »This results in an increase in productivity 9 These lines are distributed to make the line g 1 »G 3 $ S 5…« ♦ ♦ g 1 9 9 9 is distributed on the left (L) > and line 8 2 > g 4 • g 6… «· · g 2 0 0 0 is distributed on the right (R) , That is, 9 even-numbered control lines distributed in this paper rhyme are used by the Chinese state to prevent obstacles (then Xiao >> A7 B7 22 V. Description of the invention (on the left (L), and odd-numbered control lines on the right (R).) Distribution, because the related wires are wired and arranged at equal intervals, density irregularities do not occur. As a result, productivity can be further increased. It is also sufficient if the remaining lines are distributed on the upper side (L) and the lower side (D) in the same manner as described above. According to another embodiment, although not shown, the lines g 1 to glOO, g201 to gOO .. ....... gl801 to

gl900分佈在左側（L)，且線glOl至gr200 ，g301 至 g400 .......... gl901 至 g2000 訂分佈在右側（R)。亦即，連績的控制線分佈至每個晶片，且此種線群乃交替的分佈在右和左側（R和L)。以此種分佈，可在一晶片中允許連績的控制，且驅動時間亦可輕易的設定，因此可使用簡單且廉價的電路·在上側（L )和下側（D )之線之分佈亦以和上述相同方式的執行，因此可執行連績的處理，且可使用一廉價的電路。在此裝置中，光電轉換元件形成在四個基底1 一 1 * 1 一 2 * 1 一 3和1 _4上，且此四個基底可結合在一共同基底2上〇經濟部中央棣準局貝工消费合作社印装在由虛線所包圔之電路形成在每個基底上後，藉由安裝晶片在四個基底上或安裝四個電路板1一1至1-4和晶片在基礎2上時，可獲得如圖11和1 2所示之構造。替代的，晶片亦可安裝在一彈性板上，且該板亦可結合至包含在虛線內之電路板。如上所述，包括許多圓素且具有大面積之光電轉換裝置無法以使用習知感應器之複雜步驟製造。但是，在製造本紙張尺度適用中國國家標準（CNS > A4规格（210X297公釐） -25 - A7 B7 經濟部中央揉準赁工消费合作社印装五、發明説明、23 ) 如圖 8 和 1 0 所示之光電轉換裝置之步驟中相關的元件在同時由共同膜形成 0 因此 » 步騄之數巨較少 y 且只需簡單的步驟〇因此 > 可達成高生產率 » 且可製造大面稹 1 高效能之光電轉換裝置 • 此外 » 由於電容和光電轉換元件可在相同的元件內形成 * 元件之數巨可實質的減少 --- 半 0 如此可達成生產率之進一步增加〇依照上述之光電轉換裝置 » 每個光電轉換元件可僅以 . 注入防止層偵測入射光之量〇因此 » 於此可提供一種低成本光電轉換裝置其可利於製造方法之最佳化允許生產率之增加 > 降低製造成本和具有髙的 S / N 比〇此外 > 由於不使用隧道效應或 η 特基屏蔽以用於第一電極層 / 絕緣層 / 光電轉換半導體餍電極材料可任意的選擇且因此在控制絕緣層之厚度等之白由度相當高〇再者例如薄膜場效電晶體 ( Τ F Τ ) 之開關元件和 / 或電容元件展現了良好的匹配性並具有相同的膜構造〇因此這些膜可同時形成當成共同膜 0 此外光電轉換膜和 T F T 之 £ 要膜可在相同的真空中形成藉以實現在低成本下具有高 S / Ν 比之光電轉換裝置〇再者由於每個電容具有絕緣層當成中介層因此可提供一種高效能光電轉換裝置其可输出以多數具有簡單構造之光電轉換元件而得之光學資訊之片之稹分值〇因此可提供低成本 » 大面積 > 髙效能傳真裝置和 X 射線裝置其具有良好之特性〇圖 1 3 爲用以說明包括本發明上述之光電轉換裝置本紙張尺度逋用中國國家揉準（CNS ) A4規格（210X297公釐） -26 - A7 B7 24 五、發明説明（磷光物，和X射線源之X射線影像拾取裝置之實施例之示意圖，和使用光電轉換裝置用以轉換經由人體透射之X射線成爲影像訊號。此裝置包括X射線源3 1，一目標3 2，一柵格3 3 用以移去來自目標3 2之散射光，磷光物3 4，一基礎 3 5，和本發明之光電轉換裝置3 6。gl900 is distributed on the left (L), and lines glOl to gr200, g301 to g400 ......... gl901 to g2000 are distributed on the right (R). That is, the control lines of successive performances are distributed to each chip, and such line groups are alternately distributed on the right and left (R and L). With this distribution, continuous performance can be controlled in one chip, and the driving time can be easily set. Therefore, a simple and inexpensive circuit can be used. The distribution of the lines on the upper side (L) and the lower side (D) is also The execution is performed in the same manner as described above, so that successive processing can be performed, and an inexpensive circuit can be used. In this device, the photoelectric conversion elements are formed on four substrates 1-1 * 1-2 * 1-3 and 1-4, and these four substrates can be combined on a common substrate 2. When the industrial and consumer cooperatives are printed on the circuit enclosed by the dotted line and formed on each substrate, by mounting a chip on four substrates or mounting four circuit boards 1 to 1 to 1-4 and a chip on a base 2 The structure shown in Figs. 11 and 12 can be obtained. Alternatively, the chip may be mounted on a flexible board, and the board may be bonded to a circuit board enclosed in a dotted line. As described above, a photoelectric conversion device including a large number of elements and having a large area cannot be manufactured in a complicated step using a conventional sensor. However, the national paper standard (CNS > A4 size (210X297 mm)) applies to the manufacturing of this paper. -25-A7 B7 Printed by the Central Ministry of Economic Affairs and the Consumer Rental Cooperative, Co., Ltd. 5. Description of the invention, 23) Figures 8 and 1 The related elements in the steps of the photoelectric conversion device shown by 0 are formed by a common film at the same time. Therefore, the number of steps is very small and only simple steps are required. Therefore, high productivity can be achieved, and large surfaces can be manufactured.稹 1 High-efficiency photoelectric conversion device • In addition »Because capacitors and photoelectric conversion elements can be formed in the same element * The number of elements can be reduced substantially --- half 0 This can achieve a further increase in productivity. According to the above-mentioned photoelectricity Conversion device »Each photoelectric conversion element can only detect the amount of incident light with the .injection prevention layer. Therefore» Here, a low-cost photoelectric conversion device can be provided, which can help the manufacturer The optimization of the method allows an increase in productivity > reducing manufacturing costs and having an S / N ratio of 髙 In addition > Since no tunneling effect or η-teg shield is used for the first electrode layer / insulating layer / photoelectric conversion semiconductor餍 The electrode material can be arbitrarily selected and therefore the degree of whiteness in controlling the thickness of the insulating layer is quite high. Furthermore, for example, the switching element and / or the capacitor element of the thin film field effect transistor (TFFT) exhibit good matching properties. And have the same film structure. Therefore, these films can be simultaneously formed as a common film. In addition, the photoelectric conversion film and the TFT should be formed in the same vacuum to realize a photoelectric conversion device with a high S / N ratio at low cost. 〇 Furthermore, since each capacitor has an insulating layer as an interposer, it can provide a high-performance photoelectric conversion device whose output can be The score of the optical information sheet obtained from the photoelectric conversion element with a simple structure. Therefore, it can provide low cost. »Large area> High performance facsimile device and X-ray device have good characteristics. Figure 1 3 is used to explain Including the above-mentioned photoelectric conversion device of the present invention, the paper size is in accordance with China National Standards (CNS) A4 (210X297 mm) -26-A7 B7 24 V. Description of the invention (Phosphors and X-ray image pickup of X-ray sources A schematic diagram of an embodiment of the device, and the use of a photoelectric conversion device to convert X-rays transmitted through the human body into an image signal. The device includes an X-ray source 31, a target 3 2, a grid 3 3 for removing scattered light from the target 32, a phosphor 3 4, a base 3 5, and the photoelectric conversion device 3 6 of the present invention. .

由X射線源3 1發出之X射線照射在目標3 2上，且透射之X射線由一感應器單元所接收。來自目標3 2之散射光以柵格移去。訂由感應器單元接收之透射X射線由磷光物所吸收，並轉換成可見光。此可見光由光電轉換裝置所接收當成一影像訊號，並由外部訊號處理單元（未顯示）處理。在此例中，以本發明之光電轉換裝置，入射在光電轉換裝置之基 g上之光由在基底之前和/或端面上之光吸收層所吸收，藉以防止解晰度和類似理奐之隆征》結里，和使用習知光電轉換t置之例比A，可獲得具有高解晰度之X射線影像經濟部中央橾準局WC工消费合作社印«. 〔第一實施例〕圖14A爲依照本發明之第一實施例之光電轉換裝置之說明圖。X-rays emitted from the X-ray source 31 are irradiated on the target 32, and transmitted X-rays are received by a sensor unit. The scattered light from target 32 is removed in a grid. The transmitted X-rays received by the sensor unit are absorbed by the phosphor and converted into visible light. This visible light is received by the photoelectric conversion device as an image signal and processed by an external signal processing unit (not shown). In this example, with the photoelectric conversion device of the present invention, the light incident on the substrate g of the photoelectric conversion device is absorbed by a light absorbing layer in front of the substrate and / or on the end face, thereby preventing resolution and the like. In the "Long Zheng", compared with the example of using the conventional photoelectric conversion, the ratio A can be obtained with a high resolution X-ray imaging. Printed by the WC Industry Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs «. [First Embodiment] Figure 14A is An illustration of a photoelectric conversion device according to a first embodiment of the present invention.

安裝有光電轉換元件4之玻璃基底1乃結合至一基礎 2如下所述。如圈1 4 B所示，黑色黏著劑3在結合玻璃基底1之位置上（四個位置）應用至基底2。如圖1 4A 本紙珉尺度逋用中國國家揉準（CNS > A4規格（210X297公釐） -27 - A7 ___B7 _ 五、發明説明（25 ) 所示，相對於安裝有光電轉換元件4之表面之每個玻璃基底之相對表面設置在黏著劑3上· 在此實施例中，當成光吸收層之黑色黏著劑3只形成在每個基底1之下表面上•當由基底1之端面入射之外來的光可忽略時，此種構造特別有效。〔第二實施例〕圖1 5 A爲依照本發明之第二實施例之裝置之說明圖〇安裝有光電轉換元件4之玻璃基底1乃結合至一基底 2如下所述。如圖1 5 B所示.，使用散佈器以應用一黏著劑3至欲結合玻璃基底1之基礎2之位置上。如圖1 5 A 所示，相對於形成光電轉換元件4之表面之每個玻璃基底之相對表面設置在黏著劑3上。一光吸收層5在結合至基礎2之前，形成在每個玻璃基底1之前和側表面上。由於光吸收層5形成在基底1之端面上，此裝置可防止外界的光線入射至基底1之端面上。〔第三實施例〕圖16爲依照本發明之第三實施例之光電轉換裝置之整體構造之平面圖’圖17爲裝置之橫截面構造之截面圖〇參考圚1 6和1 7，安裝有光電轉換元件之四個基底本紙佚尺度逍用肀國國家橾準（CNS > A4規格（2丨0><297公釐）The glass substrate 1 on which the photoelectric conversion element 4 is mounted is bonded to a base 2 as described below. As shown by circle 1 4 B, the black adhesive 3 is applied to the substrate 2 at the position (four positions) where the glass substrate 1 is bonded. As shown in Figure 1 4A, the size of the paper is in accordance with the Chinese national standard (CNS > A4 size (210X297 mm) -27-A7 ___B7 _ V. The description of the invention (25), as opposed to the surface on which the photoelectric conversion element 4 is installed The opposite surface of each glass substrate is provided on the adhesive 3. In this embodiment, the black adhesive 3 as a light absorbing layer is formed only on the lower surface of each substrate 1. When incident from the end surface of the substrate 1 This structure is particularly effective when external light is negligible. [Second Embodiment] FIG. 15A is an illustration of a device according to a second embodiment of the present invention. A glass substrate 1 on which a photoelectric conversion element 4 is mounted is combined. To a substrate 2 is described below. As shown in Figure 1 5B, a spreader is used to apply an adhesive 3 to the position of the base 2 to which the glass substrate 1 is to be bonded. As shown in Figure 1 5 A, relative to the formation The opposite surface of each glass substrate on the surface of the photoelectric conversion element 4 is provided on the adhesive 3. A light absorbing layer 5 is formed before and on the side surfaces of each glass substrate 1 before being bonded to the base 2. Because the light absorbing layer 5 is formed on the end face of the substrate 1, The device can prevent external light from incident on the end face of the substrate 1. [Third Embodiment] Fig. 16 is a plan view of the overall structure of a photoelectric conversion device according to a third embodiment of the present invention. Cross-section view 〇Refer to 616 and ， 17, four base papers on which photoelectric conversion elements are installed. Dimensions and standards (CNS > A4 specifications (2 丨 0 > < 297 mm)

請先· 聞讀背面 S 項Please read the S item on the back first

訂經濟部中央標準局貝工消费合作社印笨 -28 _ A7 B7 經濟部中央揉準局胃工消费合作社印製五、發明説明丨 :26) 1 一 1 » 1 — 2 9 1 一 3 和1 - 4 乃結合至欲互相分離之 —· 基礎 2 9 藉以獲得大的光電轉換裝置〇藉由形成光電轉換元仵和薄膜場效電晶體而可得一光電轉換裝置 1 9 該光電轉換元件和該薄膜場效電晶體以a — S i 使用一光電轉換半導體材料而形成在具有大面稹之基底上 9 而該光電轉換裝置1當成所謂的接觸型感應器以經由一對 —. 光學系統用以讀取一資訊源 •在此基底上，多數之元件以等間隔 ΙΤΠ 二維的安排，且一光電轉換半導體層和一 T F T 半導體層亦以相同的方式形成〇如圖 1 6 和 1 7 所示，光電轉換元件形成在四個基底上 9 且四個基底以黏著劑 3結合在互相分離之基礎2上· — 磷光層 4 形成在光電轉換基底之後表面上* 以此方法，可獲得大面積光電轉換裝置。 — 防止反射 ( 光吸收層）5用以吸收光分量，且具有波長大約等於由磷光層 4 發射而來之光之波長，以使不會反射光分置亦即吸收具有預定波長之光以控制欲反射之光之波長乃形成在基底之前表面和端表面上，且在結合至基礎之基底間之空間中。以此構造，可改善光電轉換裝置之解晰度等光學特性 0 如果由磷光層發射出之光的尖峰波長爲5 4 0 n m，防止反射膜只用以吸收具有大約等於 5 4 0η m波長之光分量 9 以使不會反射該光分量。形成該防止反射膜可改善光電轉換裝置之例如解晰度之光學特性 « 此種防止反射膜可利用一轉換或印刷方法或以一刷子訂本纸張尺度逋用中國國家橾準（CNS ) A4规格（210X297公釐）Ordered by the Central Standards Bureau of the Ministry of Economic Affairs of the Shellfish Consumer Cooperatives Co., Ltd. -28 _ A7 B7 Printed by the Central Laboratories of the Ministry of Economic Affairs of the Gasoline Consumer Cooperatives. 5. Description of the invention 丨: 26) 1 1 »1 — 2 9 1 1 3 and 1 -4 is to be combined to separate from each other.-Foundation 2 9 to obtain a large photoelectric conversion device. 0 By forming a photoelectric conversion element and a thin film field effect transistor, a photoelectric conversion device can be obtained. 1 9 The photoelectric conversion element and the The thin film field-effect transistor is formed on a substrate having a large surface area using a photoelectric conversion semiconductor material a-S i. The photoelectric conversion device 1 serves as a so-called contact type sensor through a pair of optical systems. Read a source of information • On this substrate, most of the elements are two-dimensionally arranged at equal intervals ΓΠ, and a photoelectric conversion semiconductor layer and a TFT semiconductor layer are also formed in the same way. As shown in Figures 16 and 17 , Photoelectric conversion elements are formed on four substrates 9 and four Adhesion to the substrate binding agent 3 on the basis of the mutual phase separation 2. - phosphor layer 4 is formed after the surface of the substrate in this way * the photoelectric conversion, can obtain a large area photoelectric conversion device. — Anti-reflection (light absorbing layer) 5 is used to absorb light components and has a wavelength approximately equal to the wavelength of the light emitted from the phosphorescent layer 4 so that the reflected light is not separated, that is, light with a predetermined wavelength is absorbed for control The wavelength of the light to be reflected is formed on the front and end surfaces of the substrate, and in the space between the substrates bonded to the foundation. With this structure, the optical characteristics such as the resolution of the photoelectric conversion device can be improved. If the peak wavelength of the light emitted by the phosphorescent layer is 5 40 nm, the anti-reflection film is only used to absorb light having a wavelength of approximately 5 4 0 η m. Light component 9 so that it is not reflected. The formation of the anti-reflection film can improve the optical characteristics of the photoelectric conversion device, such as resolution. «This anti-reflection film can be converted by a conversion method or a printing method, or a paper can be ordered with a brush. China National Standards (CNS) A4 Specifications (210X297 mm)

-29 - A7 B7 經濟部中央樣準局貝工消费合作社印装五、發明説明（27) 藉由應用例如環氧或丙烯酸基材料之聚合物材料形成〇如上所述 9 依照此實施例 9 在具有大面積層之光電轉換裝置中，其中多數之光 m 轉換裝置基底 ( 其上以相等間隔二維的安排多數之元件 ) 和 — 光電轉換半導體層以及 —. T F T 半導體層同時形成 » 乃結合至欲互相分離之基礎用以吸收波長大約等於由磷光層發出之光之波長以使不會反射該光之分量之用以吸收光分量之防止反射膜乃形成以避免除了用於光電轉換單元外 9 來白磷光層之光由光電轉換基底之前表面和端部份不規則的反射 9 藉以防止不規則的反射和改善光電轉換裝置之例如解晰度等光學特性〇 C 第四實施例圖 1 8爲本發明之光電轉換裝置之較佳實施例之示意平面圖 9 圖1 9 爲 rgt 圖 18 之橫截面構造之示意截面圖〇參考圖1 8 和 1 9，該裝置包括光電轉換單元 1 光電轉換單元之基底 1 —1 1 — 2 > 1 — 3 和 1 — 4 基底上以矩陣型式安排光電轉換元件 ( 未顯示 ) > 一基礎 2 » — 黏著劑3 用以接合光電轉換單元至基礎 2 磷光層 4 1 和 -- 光吸收層 5 9 使用典型的以非晶矽之非晶半導體材料之光電轉換元件當成光電轉換半導體層乃形成在光電轉換單元 1 之基底 1 一 1 } 1 - 2 > 1 -3 和 1 — 4 上 0 用以由光電轉換單元 1 输出讀取訊號至 —外部單元之薄膜場效電晶體最好形成在基底 1 - 1 » 1 -2 9 1 一 3 和 1 — 4 上〇較佳的是訂本紙張尺度適用中國國家梂準（CNS > A4说格（210X297公釐）-29-A7 B7 Printing by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperative, V. Description of the Invention (27) Formed by applying polymer materials such as epoxy or acrylic based materials. 9 As described above, according to this embodiment 9 in In a photoelectric conversion device having a large-area layer, the majority of the light-m conversion device substrates (the majority of the elements are arranged two-dimensionally at equal intervals) and-the photoelectric conversion semiconductor layer and-. TFT semiconductor layer are formed simultaneously »are combined to The basis to be separated from each other is used to absorb a wavelength approximately equal to the wavelength of the light emitted by the phosphorescent layer so that a reflection preventing film for absorbing the light component that does not reflect the component of the light is formed to avoid the exception of being used for the photoelectric conversion unit 9 The light from the white phosphorescent layer is reflected irregularly on the front and end portions of the photoelectric conversion substrate 9 to prevent irregular reflection and improve the photoelectric conversion device. Optical characteristics such as resolution, etc. Fourth Embodiment FIG. 18 is a schematic plan view of a preferred embodiment of the photoelectric conversion device of the present invention 9 FIG. 19 is a schematic cross-sectional view of the cross-sectional structure of rgt FIG. 18 Reference Figures 1 8 and 19, the device includes a photoelectric conversion unit 1 substrates of the photoelectric conversion unit 1 — 1 1 — 2 > 1 — 3 and 1 — 4 arranged in a matrix pattern on the substrate (not shown) > Basic 2 »— Adhesive 3 Used to bond the photoelectric conversion unit to the basic 2 Phosphorescent layer 4 1 and-Light absorbing layer 5 9 A photoelectric conversion element using a typical amorphous semiconductor material of amorphous silicon is used as the photoelectric conversion semiconductor layer. 1-1} formed on the substrate 1 of the photoelectric conversion unit 1} 1-2 > 1 -3 and 1-4 are used to output a read signal from the photoelectric conversion unit 1 to a thin film field effect transistor of an external unit The body is best formed on the base 1-1 »1-2 9 1-3 and 1-4 〇 The better is that the paper size of the paper applies the Chinese national standard (CNS > A4 format (210X297 mm)

-30 - A7 B7 經濟部中央搮準扃貝工消费合作社印氧五、發明説明< 28) 9 多數之光電轉換元件以等間隔二維的安排以和薄膜場效電晶體結合〇如圖 1 8 所示 f 在光零轉換裝置中 9 四個光電轉換單元 1 在垂直和水平方向安排成 2 X 2 矩陣 9 並以黏著劑 3 固定在基礎 2 〇光電轉換單元 1 猶需始終以黏著劑 3固定至基雄妮 2 〇但是由於黏著劑 3 之使用使光電轉換單元 1 在它們固定後較不易受到移動之影響 9 最好使用黏著劑 3 Ο 值得注意的是黏著劑 3 Inr. 撕需 rrh：應用至介於基礎 2 和光電轉換單元 1 之間之所有位置 0 黏著劑 3 可以任何的方式 rrte 思用只要光電轉換單元恒久的固定至基礎 2 0 磷光層 4 最好形成在接近在光電轉換單元上之光電轉換元件附近 0 藉由形成此層接近或與光電轉換元件接觸 > 當成資訊源用以發出欲由光電轉換元件所接收之光之來白磷光層之光可利用 1 X 放大讀取 0 用以吸收由磷光層 4 發射之光之光吸收層 5 乃形成在基底 1 — 1 至 1 — 4 之端表面和 / 或前表面 P 在基底 1 一 1 至 1 — 4 之端表面上之光吸收層 5之形成可防止入射至基底或由 ▲凌· 刖表面反射之光或直接入射在端表面之光由端表面反射和再度入射在光電轉換元件上，或降低入射之光之置〇亦即光吸收層可抑制在光電轉換元件上接近光電轉換單元之基底 1 — 1 至 1 — 4 之端面之外界光之入射，藉以增加 S / N 比〇在基底 1 — 1 至 1 — 4 之前表面上之光吸收層 5之形訂本紙張尺度適用中國國家棣準（CNS ) A4规格（21〇X297公釐）-30-A7 B7 Printed by the Central Ministry of Economic Affairs, Zhuhai Mining Consumer Cooperative, V. Invention Description < 28) 9 Most of the photoelectric conversion elements are arranged at equal intervals and two-dimensionally to combine with thin film field effect transistors. The f shown in 8 is in the light-zero conversion device. 9 The four photoelectric conversion units 1 are arranged in a 2 X 2 matrix in the vertical and horizontal directions and fixed to the base 2 with an adhesive 3 〇 The photoelectric conversion unit 1 always needs an adhesive 3 It is fixed to Kisungni 2 〇 However, the use of the adhesive 3 makes the photoelectric conversion units 1 less susceptible to movement after they are fixed 9 It is best to use the adhesive 3 〇 It is worth noting that the adhesive 3 Inr. Tear rrh: Application To all positions between the base 2 and the photoelectric conversion unit 1 0 adhesive 3 can be used in any way rrte as long as the photoelectric conversion unit is permanently fixed to the base 2 0 phosphorescent layer 4 It is formed near the photoelectric conversion element on the photoelectric conversion unit. By forming this layer, it is close to or in contact with the photoelectric conversion element. As a source of information, it is used to emit the white phosphorescent layer of light to be received by the photoelectric conversion element. Light can be read with 1 X magnification. 0 A light absorbing layer 5 for absorbing light emitted by the phosphorescent layer 4 is formed on the end surface and / or front surface P of the substrate 1-1 to 1-4 on the substrate 1-1 to The formation of the light absorbing layer 5 on the end surface of 1-4 can prevent the light incident on the substrate or reflected by the ▲ 凌 ·· surface or the light directly incident on the end surface from being reflected by the end surface and incident on the photoelectric conversion element again. Or reduce the position of the incident light. That is, the light absorption layer can suppress the entrance of light outside the end faces of the substrate 1-1 to 1-4 near the photoelectric conversion unit on the photoelectric conversion element. In order to increase the S / N ratio, the shape of the light-absorbing layer 5 on the surface before the substrate 1-1 to 1-4 is revised. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm).

-31 - A7 B7_*__ 五、發明説明（29) ‘ 成可避免進入基底之光由前表面所反射’或降低反射之光之量。在光電轉換元件上之外界光之入射可藉由上述之功能而抑制，且因此，可達成S/Ν之增加和實質解晰度之增加。在本發明中之光吸收層之吸收波長特性依照磷光層4 之振盪波長而設定。更特別而言，光吸收層乃設定以吸收具有和磷光層4之振盪波長之主尖峰波長相同之波長之光分置，或吸收具有接近如所需之尖峰振盪波長之波長之光分置。一般而言，光吸收層設計成具有互補於由磷光層4 發出之光之顏色之顔色。此外，光吸收靨之顏色最好設定如下。首先，鱗光層 4之振盪波長之主尖峰波長位在色晶圖上。一直線通過在色晶圖上表示白色之白點W。透射互補波長對之光分量之光吸收構件最好使用根據磷光層4之振盪波長》-31-A7 B7 _ * __ V. Description of the invention (29) ‘to prevent the light entering the substrate from being reflected by the front surface’ or reduce the amount of reflected light. The incidence of external light on the photoelectric conversion element can be suppressed by the above function, and therefore, an increase in S / N and an increase in substantial resolution can be achieved. The absorption wavelength characteristic of the light absorbing layer in the present invention is set in accordance with the oscillation wavelength of the phosphorescent layer 4. More specifically, the light absorption layer is set to absorb light distribution having the same wavelength as the main peak wavelength of the oscillation wavelength of the phosphorescent layer 4, or to absorb light distribution having a wavelength close to the desired peak oscillation wavelength. In general, the light absorbing layer is designed to have a color complementary to the color of the light emitted from the phosphorescent layer 4. In addition, the color of the light-absorbing light is preferably set as follows. First, the main peak wavelength of the oscillating wavelength of the scale layer 4 is located on the color crystal map. A straight line passes through the white point W on the crystal chart. The light absorbing member that transmits the light component of the complementary wavelength is preferably based on the oscillation wavelength of the phosphorescent layer 4 "

經濟部中央樣率局負工消费合作杜印«L 如果由磷光餍4發射之光之振盪波長之主尖峰波長爲 5 4 Omm時，最好使用用以吸收具有大約等於5 4 0 mm之光分量，包括具有等於5 4 0mm之波長之光分量之光吸收構件。更特別而言，最好使用用以吸收紅，藍和紫紅之光吸收壙件。關於用以著色一光吸收構件之著色材料而言，最好使用在X射線之照射下不易分解且可展現長時間穩定性之材料· 最好使用一旋轉塗覆法，一展幕塗曆法，一螢幕印刷本纸張又度適用中國國家棣準（CNS ) A4規格（210X297公釐） A7 B7 五、發明説明（） 30 (請先閲讀背面之at項再法，例如偏置印刷之轉換方法，或使用一噴霧器之塗覆方法以應用一光吸收構件至基底之端面或前表面。替代的，可以下述方式應用一光吸收構件。當成一光吸收構件之— 樹脂乃以旋轉塗覆法，屏幕塗層法，螢幕印刷法，轉換法，或使用噴霧器之方法應用至基礎板。而後，光電轉換單元安排在基礎板上。結果，光吸收構件應用至光電轉換單元之基底之前表面或端部份上。如果應用至基礎板之樹脂層具有充份的厚度時，當光電轉換單元壓抵基礎板時，樹脂會流經基底間。結果，光吸收構件可應用至基底之端部份•當光電轉換單元由基礎板移去時，光吸收構件可應用至基底之前表面和端表面。訂在此例中，如果基礎板使用當成一基礎，且使用一黏著劑和上述著色材料之混合物當成一樹脂時，樹脂層可共同使用當成一光吸收層和一黏著劑。當光吸收構件只應用至基底之端表面時，在光電轉換單元固定在一基礎上後，可使用一噴霧器以將當成光吸收構件之樹脂注入介於基底間之空間。鍾濟部中夬揉準局負工消费合作社印装〔第五實施例〕圔21爲依照本發明之第五實施例之光電轉換裝置之全部構造之平面圖。圖2 1中之光電轉換裝置之特徵在於形成在四個基底上之光電轉換裝置100，200，300和400以相當於一光電轉換元件之空間而互相間隔的結合，以構成— 本紙張尺度適用中國國家橾準（CNS ) A4规格（210X297公釐） -33 - A7 ____B7__ 五、發明説明（31) 大的光電轉換裝置。在光電轉換裝置100上，1 00 0x1 000光電轉換元件安排和連接至控制線g 1至g 1 0 0 0和訊號線 s i gl至s i glOOO，亦即，全部2000條線。每1 0 0個移位暫存器SR1乃整合成一晶片。全部1 0 個移位暫存器晶片SR1 — 1至SR1 — 1 〇乃安排在一基底1 00上，且連接至控制線g 1至glOOO。每1 0 0個偵測稹體電路亦整合成一晶片。全部1 0 個積體電路晶片I C 1至I C 1 0 0乃安排在基底10 0 上，並連接至訊號線s i gl至s i 1 000，光電轉換裝置200，300和400具有和基底10 0相同的構造。亦即，100x100光電轉換元件安排在每個基底上，並連接至1 0 0 0控制線和1 0 0 0訊號線。此外， 10個移位暫存器晶片和10個偵測積體電路晶片乃安排在每個基底上。在柑關基底上之移位暫存器晶片和偵測積體電路晶片可以是相同或不同的。再者，四個光電轉換裝置可同時掃描。在此例中，掃描時間可縮短至約1/4。經濟部中央揉率局貝工消费合作社印氧如圖2 1所示，光電轉換元件形成在四個基底上，且四個光電轉換裝置基底結合成些微的互相隔離，藉以形成一大面積光電轉換裝置。以此方法，每個基底之良率會增加，且同時，可降低由於缺點而導致每個基底之金錢損失。更特別而言，如果在圖21所示之大面積光電轉換裝置中之光電轉換元件之面稹等於形成在大面稹基底上之光電轉換裝置中之光電轉換元件時*在圓2 1中，在相關基底本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） -34 - A7 B7Du Yin 负 L, the Consumer Samples Cooperative Work of the Central Sample Rate Bureau of the Ministry of Economic Affairs, if the main peak wavelength of the oscillation wavelength of the light emitted by the phosphorescent osmium 4 is 5 4 Omm, it is best to use to absorb light with a wavelength equal to approximately 5 4 0 The component includes a light absorbing member having a light component having a wavelength equal to 540 mm. More particularly, it is preferable to use a light absorbing member for absorbing red, blue, and magenta. As a coloring material for coloring a light absorbing member, it is preferable to use a material that is not easily decomposed under X-ray irradiation and can exhibit long-term stability. It is best to use a spin coating method and a curtain coating calendar method. A screen printed paper is also applicable to China National Standards (CNS) A4 specifications (210X297 mm) A7 B7 V. Description of the invention () 30 (Please read the at method on the back, such as the conversion method of offset printing Or use a sprayer coating method to apply a light absorbing member to the end face or front surface of the substrate. Alternatively, a light absorbing member can be applied in the following way. As a light absorbing member — the resin is spin-coated , The screen coating method, the screen printing method, the conversion method, or the method using a sprayer are applied to the base plate. Then, the photoelectric conversion unit is arranged on the base plate. As a result, the light absorbing member is applied to the front surface or end of the substrate of the photoelectric conversion unit. In part, if the resin layer applied to the base plate has a sufficient thickness, when the photoelectric conversion unit is pressed against the base plate, the resin will flow between the substrates. Result The light absorbing member can be applied to the end portion of the substrate. When the photoelectric conversion unit is removed from the base plate, the light absorbing member can be applied to the front surface and the end surface of the substrate. In this example, if the base plate is used as a foundation, And when a mixture of an adhesive and the above-mentioned coloring material is used as a resin, the resin layer can be used together as a light absorbing layer and an adhesive. When the light absorbing member is applied only to the end surface of the substrate, the photoelectric conversion unit is fixed at After a foundation, a sprayer can be used to inject the resin used as the light absorbing member into the space between the substrates. Printed by Zhongji Department of the Central Bureau of the Zhuanzhou Bureau of Work and Consumer Cooperative [Fifth Embodiment] 圔 21 is in accordance with this A plan view of the entire structure of the photoelectric conversion device of the fifth embodiment of the invention. The photoelectric conversion device in FIG. 2 is characterized in that the photoelectric conversion devices 100, 200, 300, and 400 formed on four substrates are equivalent to one photoelectric conversion The components are spaced and spaced together to form — this paper size applies to China National Standard (CNS) A4 (210X297 mm) -33-A7 ____B7__ 5. Description of the invention (31) Large photoelectric conversion device. On the photoelectric conversion device 100, 1 0 0x1 000 photoelectric conversion elements are arranged and connected to the control lines g 1 to g 1 0 0 0 and the signal lines si gl to si glOOO. That is, all 2000 lines. Each 100 shift register SR1 is integrated into one chip. All 10 shift register chips SR1 — 1 to SR1 — 1 0 are arranged on a base 100 It is connected to the control lines g 1 to gl 1000. Each 100 detection circuit is also integrated into a chip. All 10 integrated circuit chips IC 1 to IC 100 are arranged on the substrate 100. And connected to the signal lines si gl to si 1 000, the photoelectric conversion devices 200, 300, and 400 have the same structure as the substrate 100. That is, a 100x100 photoelectric conversion element is arranged on each substrate and is connected to a 1000 control line and a 1000 signal line. In addition, 10 shift register chips and 10 detection integrated circuit chips are arranged on each substrate. The shift register chip and the detection integrated circuit chip on the base can be the same or different. Furthermore, four photoelectric conversion devices can be scanned simultaneously. In this example, the scan time can be shortened to about 1/4. As shown in Fig. 21, the photoelectric conversion element is formed on four substrates, and the four photoelectric conversion device substrates are combined to be slightly isolated from each other, thereby forming a large area of photoelectric conversion. Device. In this way, the yield of each substrate is increased, and at the same time, the monetary loss of each substrate due to defects can be reduced. More specifically, if the face of the photoelectric conversion element in the large-area photoelectric conversion device shown in FIG. 21 is equal to the photoelectric conversion element in the photoelectric conversion device formed on the large-area substrate, in circle 21, The relevant paper size of this paper applies Chinese National Standard (CNS) A4 (210X297 mm) -34-A7 B7

經濟部中央樣率局負工消费合作社印II 五、發明説明（32) 內之所有控制和訊號線之全部長度約爲形成在一大面積基底之光電轉換裝置中之所有控制和訊航線之全部長度之約 1 / 4 〇在此種光電轉換裝置中，當控制和訊號線經歷短電路或開電路時，來自連接至這些線之光電轉換元件之所有输出訊號變成不正確· 因此，不能使用光電轉換裝置。上述之錯誤幾乎和所有控制和訊號線之全部長度成比例的發生因此全降低良率。在圖2 1中，根據每個裝置之基底之接線錯誤之良率四倍高於許多光電轉換元件形成在一大面稹基底上之光電轉換裝置之良率。此外，當一裝置因爲在豳2 1 中之一缺陷基底而無法使用時，由於金錢損失之量幾乎和基底之面稹成比例，在圖 2 1 所示之裝置之例中，金錢損失之置約爲所有光電轉換元件形成在一大面稹基底之光電轉換裝置之例之 1 / 4 » 如果介於基底之空間設定爲相當於如圖2 1 所示之光電轉換元件之1 .5 圖素或更小之值時，由鄰近光電轉換元件而來之输出訊號之平均值可使用當成來自介於未形成有光電轉換元件之元件間之部份之資料。因此，可使用簡單的資料校正方法，且此時，可獲得相當正確的資料。圖 2 2爲圖 2 1 之中央部份之放大值· 圖 2 2爲結合有四個基底之中央部份。以下說明可正確的校正來自必需呈現在中央部份之一元件之資料和使用所得資料之方法〇請先閲背面之項本紙張尺度逍用中國國家標準（CNS ) A4规格（210X297公釐） -35 - A7 B7 五、發明説明（33) 來自圖2 2中之中央元件之資料無法藉由使用來自相鄰（右和左）元件之資料插值。相似的，來自上和下元件之資料亦無法使用。圓2 2中，在位置P X 4上之資料和在位置P X 5上之資料可使用由相關相鄰元件而來之資料之平均值而得。在位置P X 1上之資料可使用在位置P X 4和P X 5上之資料之平均值而插值。相似的，在位置P X 2和p X 3上之資料可藉由平均來自相關的上和下元件之資料而插值。 —般而言，除了使用來自左和右元件或來自上和下元件之資料之平均值之方法外，資料亦可使用各種方法插值 •例如，下述之方法是已知的：使用來自全部八個元件，亦即，上/下，左，右，右上方，左上方，右下方，和左下方元件之資料之平均值之方法；使用上述八個資料之一些資料之方法；和使用上述資料之幾何平均之方法。經濟部中央揉準局負工消费合作社印氧以下參考圖2 3之流程圖說明此種資料插值之一序列操作。此種序列操作可藉由下述之流程圖表示：二維影像输入步驟S TP 1—記憶儲存步驟STP 2 —影像處理（插值）步驟STP3 —記憶儲存步驟STP4 —二維影像輸出步驟STP5。以下參考圚2 4 (其中顯示用於影像處理（插值）之流程圖和圖25(其概略的顯示在光電轉換裝置之基底上之資料安排）詳細說明此方法之實施例。假設3 (垂直）X3 (水平）光電轉換元件形成在每個基底110，210，310和410上，且相關的基本纸張尺度適用中國國家梯率（CNS ) A4洗格（210X297公釐）一 36 _ A7 B7 34 五、發明説明（底由相當於一光電轉換元件之空間所互相間隔。在此例中，所需資料之數且爲（3+1+3)X(3+1+3)= 49。如圖25所示，相關的資料視爲DAT (1 ，1) ，D A T ( 2 ，1 ) ， · · · · · · · · · 2) ......... DAT ( D A T ( 7 ，7 )Printed by the Central Sample Rate Bureau of the Ministry of Economic Affairs, Consumer Cooperatives II. The total length of all control and signal lines in (32) is about the total length of all the control and signal lines in the photoelectric conversion device formed on a large area substrate. In this type of photoelectric conversion device, when the control and signal lines experience short circuits or open circuits, all output signals from the photoelectric conversion elements connected to these lines become incorrect. Therefore, photoelectric conversion cannot be used. Device. The above errors occur almost in proportion to the entire length of all control and signal lines, so the yield is reduced. In Fig. 21, the yield rate of the wiring error based on the base of each device is four times higher than the yield rate of the photoelectric conversion device formed on a large surface of many photovoltaic conversion elements. In addition, when a device cannot be used because of a defective substrate in 豳 2 1, the amount of money lost is almost proportional to the surface of the substrate. In the example of the device shown in FIG. 2, the amount of money lost About one-fourth of an example of a photoelectric conversion device in which all photoelectric conversion elements are formed on a large surface. If the space between the substrates is set to be equivalent to 1.5 pixels of the photoelectric conversion element shown in FIG. 2 1 When the value is smaller or smaller, the average value of the output signals from the neighboring photoelectric conversion elements can be used as the data from the part between the elements where the photoelectric conversion elements are not formed. Therefore, a simple data correction method can be used, and at this time, fairly correct data can be obtained. Figure 22 shows the magnification of the central part of Figure 21. Figure 22 shows the central part combined with the four bases. The following instructions can correctly correct the information from one of the components that must be presented in the central part and the method of using the obtained data. Please read the items on the back first. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm)- 35-A7 B7 V. Description of the invention (33) The data from the central component in Figure 2 2 cannot be interpolated by using the data from adjacent (right and left) components. Similarly, data from the upper and lower components cannot be used. In circle 22, the data at the position P X 4 and the data at the position P X 5 can be obtained by using the average value of the data from related neighboring components. The data at position P X 1 can be interpolated using the average of the data at positions P X 4 and P X 5. Similarly, the data at positions P X 2 and p X 3 can be interpolated by averaging the data from the relevant upper and lower components. -In general, in addition to the method of averaging the data from the left and right components or from the top and bottom components, the data can also be interpolated using various methods. For example, the following method is known: use from all eight Components, that is, a method of averaging the data of the top / bottom, left, right, top right, top left, bottom right, and bottom left components; a method of using some of the above eight data; and using the above data Method of geometric averaging. The Central Government of the Ministry of Economic Affairs of the Central Bureau of Work, Consumer Cooperatives, Printing Oxygen The following describes a sequence of such data interpolation with reference to the flowchart in Figure 23. This sequence of operations can be represented by the following flowchart: two-dimensional image input step S TP 1-memory storage step STP 2-image processing (interpolation) step STP3-memory storage step STP4-two-dimensional image output step STP5. The following describes the embodiment of this method in detail with reference to 圚 2 4 (which shows a flowchart for image processing (interpolation) and FIG. 25 (which outlines the arrangement of data displayed on the substrate of the photoelectric conversion device). Hypothesis 3 (vertical) X3 (horizontal) photoelectric conversion elements are formed on each of the substrates 110, 210, 310, and 410, and the relevant basic paper sizes are applicable to China's National Slope (CNS) A4 wash case (210X297 mm)-36 _ A7 B7 34 V. Description of the invention (The base is spaced from each other by a space equivalent to a photoelectric conversion element. In this example, the number of required data is (3 + 1 + 3) X (3 + 1 + 3) = 49. As shown in Figure 25, the relevant data are regarded as DAT (1, 1), DAT (2, 1), ... · DAT (DAT (7, 7)

7 ) ，D A T7), D A T

在圖2 3之流程圈中之歩驟STP 2中，來自光電轉換元件之資料输入至記憶中·在此例中，由於在DAT ( m，4)和DAT (4，η)上未產生資料，因此設定空狀態（Ρ )。以下說明圖2 4中之影像處理（插值）。訂經濟部中央揉率局貝工消费合作社印装首先，決定是否要在相關基底間之資料插值。如果無需對此資料插值，則此資料保持在空狀態（V) ·如果需要插值，則檢査現有之資料是否爲欲插值之資料。在此例中，如果m夫4或η夫4，則此資料並非欲插值之資料。在此例中•使用由光電轉換元件所獲得且输入至記憶之資料，假設此資料爲欲插值之資料。在此例中，如果m== 4 ，則再输入在相關於欲插值之資料之上和下位置上之資料之平均值，當成欲插值之資料至記憶。如果n = 4，則再输入在相關於欲插值之資料之左和右位置上之資料之平均值，當成欲插值之資料，至記憶（圚2 3之步驟STP 4 )。在此例中，如果m=4且n=4，亦即，現有資料爲在四基底之中央之DAT (4，4)，由於沒有資料在記憶中之上，下，左和右位置，在右上，左上，右下，左下位置上之四資料之平均值乃輪入至記憶中· 本紙浪尺度逋用中國國家標率（CNS ) A4規格（210XW7公釐） -37 - 經濟部中央橾準局貝工消费合作社印— A7 B7 五、發明説明（） 35 以此方式，藉由使用相關於所需資料之左，右，上，下位置上之資料之平均值，可輕易的執行插值。圖2 6爲沿圖2 2之2 6 — 2 6線所截取之截面圖。參考圖2 6，四個基底結合至一大玻璃基底8 0或銅片 8 0。介於四個基底間之空間充填以黑色樹脂9 0當成光吸收構件，以防止由於來自磷光層之光之散射而導致之串音。如圖9 A和9 B所示，第一至第五實施例之光電轉換裝置，包含： —光電轉換元件，其藉由叠層一第一電極層2，一絕緣層7，一光電轉換半導體靥4，用以禁止第一導電型之載子之注入之一半導體層5，和一第二電極靥而形成；光電轉換機構，用以應用一電場至該光電轉換元件，以一方向，其中由訊號光所產生入射在光電轉換半導體層上之第一導電型載子可受到保持，和與第一導電型不同之第二導電型之載子受引導向著第二電極層；更新機構，用以應用一電場至該光電轉換元件，以一方向，其中，第一導電型之載子由光電轉換半導體層引導向著第二電極層；和一訊號偵測單元，用以在由該光電轉換機構執行一光電轉換操作時，偵測儲存在光電轉換半導體層中之第一導電型之載子或引導至第二層之第二導電型載子· 〔第六實施例〕本紙張尺度逋用中國國家橾率（CNS ) A4現格（210X297公釐） (請先閱讀背面之項再¥本頁)In step STP 2 in the flow circle of Fig. 23, the data from the photoelectric conversion element is input into the memory. In this example, no data is generated on DAT (m, 4) and DAT (4, η). Therefore, the empty state (P) is set. The image processing (interpolation) in Fig. 24 will be described below. Order printing by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives First, decide whether to interpolate data between related substrates. If there is no need to interpolate this data, this data will remain empty (V). If interpolation is required, check if the existing data is the data to be interpolated. In this example, if m husband 4 or n husband 4, this data is not the data to be interpolated. In this example • Use the data obtained from the photoelectric conversion element and input to the memory, assuming this data is the data to be interpolated. In this example, if m == 4, then the average value of the data above and below the relevant data to be interpolated is input as the data to be interpolated to the memory. If n = 4, then input the average value of the data in the left and right positions related to the data to be interpolated, and use it as the data to be interpolated to the memory (step STP 4 of 323). In this example, if m = 4 and n = 4, that is, the existing data is DAT (4,4) in the center of the four bases, because there is no data in memory above, below, left, and right, in The average of the four data at the upper right, upper left, lower right, and lower left positions is rotated into memory. The paper wave scale uses the Chinese National Standard (CNS) A4 specification (210XW7 mm) -37-Central Bureau of Standards, Ministry of Economic Affairs Printed by Pui Gong Consumer Cooperative — A7 B7 5. Invention Description (35) In this way, interpolation can be easily performed by using the average of the data on the left, right, up, and down positions related to the required data. Fig. 26 is a sectional view taken along line 2 6-2 6 in Fig. 22. Referring to FIG. 26, four substrates are bonded to a large glass substrate 80 or a copper sheet 80. The space between the four substrates is filled with black resin 90 as a light absorbing member to prevent crosstalk caused by the scattering of light from the phosphorescent layer. As shown in FIGS. 9A and 9B, the photoelectric conversion devices of the first to fifth embodiments include: — a photoelectric conversion element, which is formed by laminating a first electrode layer 2, an insulating layer 7, and a photoelectric conversion semiconductor;靥 4, which is formed by a semiconductor layer 5, which prohibits the implantation of carriers of the first conductivity type, and a second electrode 靥; a photoelectric conversion mechanism, which is used to apply an electric field to the photoelectric conversion element in a direction, where The first conductive type carrier generated by the signal light and incident on the photoelectric conversion semiconductor layer can be held, and the second conductive type carrier different from the first conductive type can be guided toward the second electrode layer; An electric field is applied to the photoelectric conversion element, in a direction, in which the carriers of the first conductivity type are guided by the photoelectric conversion semiconductor layer toward the second electrode layer; and a signal detection unit is used for the photoelectric conversion mechanism. When a photoelectric conversion operation is performed, a carrier of the first conductivity type stored in the photoelectric conversion semiconductor layer or a carrier of the second conductivity type guided to the second layer is detected. [Sixth Embodiment] This paper size is not applicable China National Rate (CNS) A4 now (210X297 mm) (Please read the item on the back before ¥ this page)

訂 -38 - 五、發明説明（ 36 A7 B7 經濟部中央橾準扃貝工消费合作社印製圚2 7爲依照本發明之第六實施例之光電轉換裝置之全部構造之平面圚· 如圖2 7所示之光電轉換裝置之特徵在於四個光電轉換裝置每個皆具有和光電轉換裝置1 0 〇相同的構造；四個光電轉換裝置之每個在相同平面上旋轉90° ;和該四個裝置以相當於光電轉換元件之一個圖素之空間互柑分離的結合，以形成一大的光電轉換裝置· 在光鼋轉換裝置100上，1000x1000光電轉換元件安排和連接至控制線g 1至g 1 0 0 0和訊號線 S i gl至s i glOOO，亦即，全部2000條線。每1 0 0個移位暫存器S R 1乃整合成一晶片。全部1 0 個移位暫存器晶片SR1 — 1至SR1 — 1 〇乃安排在一基底1 0 0上，且連接至控制線g 1至g 1 000。每10 0個偵測稹體電路亦整合成一晶片。全部1 0 個積體電路晶片I C 1至I C 1 0 0乃安排在基底1 0 0 上，並連接至訊號線s i gl至s i 1 000。在相關基底上之移位暫存器晶片和偵測稹體電路晶片可以是互相相同的。再者，四個光電轉換裝置可同時掃描。在此例中，掃描時間可縮短至約1/4。如圖2 7所示，光電轉換元件和具有相同圖樣之線乃形成在四個基底上，相同的移位暫存器和相同的偵測積體電路乃安裝在四個基底上，四個基底之每一個皆旋轉 90° ，且基底些微互相分開的結合，藉以形成大面積光電轉換裝置。以此種構造，可顯著的降低零件之數目。此請先聞讀背面之---38-V. Description of the invention (36 A7 B7 Printed by the Central Ministry of Economic Affairs, Zhuhai Cooperative Consumers Cooperative) 2 7 is a plane of the entire structure of the photoelectric conversion device according to the sixth embodiment of the present invention. The photoelectric conversion device shown in 7 is characterized in that each of the four photoelectric conversion devices has the same structure as the photoelectric conversion device 100; each of the four photoelectric conversion devices rotates 90 ° on the same plane; and the four The device is combined with a space equivalent to one pixel of the photoelectric conversion element to form a large photoelectric conversion device. On the optical conversion device 100, 1000x1000 photoelectric conversion elements are arranged and connected to the control lines g 1 to g. 1 0 0 0 and signal lines S i gl to si glOOO, that is, all 2,000 lines. Every 100 shift registers SR 1 are integrated into one chip. All 10 shift register chips SR1 — 1 to SR1 — 10 are arranged on a substrate 100 and connected to the control lines g 1 to g 1 000. Every 100 detection carcass circuits are also integrated into a chip. All 10 integrated circuits The chips IC 1 to IC 1 0 0 are arranged on the substrate 1 0 0 And connected to the signal line si gl to si 1 000. The shift register chip and the detection circuit chip on the relevant substrate can be the same as each other. In addition, four photoelectric conversion devices can be scanned simultaneously. In this example, the scanning time can be shortened to about 1/4. As shown in Figure 27, the photoelectric conversion elements and lines with the same pattern are formed on four substrates, the same shift register and the same detection The integrated circuit is mounted on four substrates, each of which is rotated 90 °, and the substrates are slightly separated from each other to form a large-area photoelectric conversion device. With this structure, the number of parts can be significantly reduced. .Please read the back-

I ft 訂本紙张尺度適用中國國家揉準（CNS > A4规格（210X297公釐） -39 - A7 __ B7_. _ 五、發明説明（37) 外，藉由使用一種型式之裝置即可執行檢視步驟。結果，檢視步驟可有效的執行，且因此可達成生產量之增加。雖然未顯示，另一大面稹光電轉換裝置亦可根據和圖 2 7所示之光電轉換裝置相同的概念，以下述之方式形成。兩組光電轉換元件和具有相同圖樣之線形成在四個基底之每一基底上，兩基底旋轉180° ，且基底互相分離的結合，藉以形成大面積光電轉換裝置。以此構造，可降低零件之數目，且藉由使用兩種型式之裝置即可執行檢視步驟。此檢視步驟可有效的執行，且因此，可達成生產1:之增加。此外，亦可降低大面稹光電轉換裝置之成本。如果安裝在四個基底上之移位暫存器和偵測積體電路· 設計成在兩方向驅動時，所有四個光電轉換裝置可在相同方向掃描。結果，用以處理由所有光電轉換元件讀取之訊因此，大面積光電轉換裝置可以低成本製造。在第五和第六實施例之光電轉換裝置中，光吸收構件最好應用至每個基底之至少前表面或端面上。此外，如圓2 6所示，磷光層可形成在光電轉換元件上，以形成X射線影像拾取裝置· 如上所述，依照本發明，在製造大面積光電轉換裝置中，可增加每個基底之良率，並可降低由於缺陷而導致每個基底之金錢損失量，藉以有效的降低大面積光電轉換裝置之成本· 此外，依照此實施例，藉由設定介於結合基底間之空本紙張尺度速用中國國家梂率（CNS ) A4規格（210X297公釐） (請先聞讀背面·意事項Η 裝-- π寫本頁) ,ίτ 經濟部中央揉準扃貝工消费合作社印It -40 - A7 B7 五、發明説明（38) 間爲相當於光電轉換元件之1.5圖素之值時，在未形成光電轉換元件之每個部份上之資料最小，藉此可便於在未形成光電轉換元件之部份上之資料插值，並獏得相當正確的資料· 再者，依照此實施例，在製造大面稹光電轉換裝置時，可有效的改善檢視步驟，且因此，可達成在生產量上之增加和左零件數目上之降低。結果，可進一步降低大面稹光電轉換裝置之成本· 再者，依照此實施例，在大面稹光電榑換裝置中，所有的光電轉換元件在相同方向掃描，因此，可利用簡單的裝置以高速執行訊號處理。結果，可達成光電轉換裝置之成本之降低和效能之改善。 (請先閱讀背面"·注t項再本頁) —ϋ m . 項再^:本 -訂經濟部中央橾準局貝工消费合作社印裂本紙張尺度適用中國國家棣準（CNS ) A4规格（210X297公釐） -41 -The paper size of the I ft book is applicable to the Chinese national standard (CNS > A4 size (210X297 mm) -39-A7 __ B7_. _ V. Description of the invention (37) In addition, the inspection can be performed by using a type of device As a result, the inspection step can be effectively performed, and thus an increase in throughput can be achieved. Although not shown, the other large-scale photoelectric conversion device can also be based on the same concept as the photoelectric conversion device shown in FIG. Two groups of photoelectric conversion elements and lines with the same pattern are formed on each of the four substrates. The two substrates are rotated by 180 ° and the substrates are separated from each other to form a large-area photoelectric conversion device. The structure can reduce the number of parts, and the inspection step can be performed by using two types of devices. This inspection step can be effectively performed, and therefore, an increase of 1: can be achieved. In addition, the large area can be reduced. The cost of the photoelectric conversion device. If the shift register and the detection integrated circuit mounted on the four substrates are designed to drive in two directions, all four photoelectric conversion devices It can be scanned in the same direction. As a result, it is used to process information read by all photoelectric conversion elements. Therefore, a large-area photoelectric conversion device can be manufactured at low cost. In the photoelectric conversion devices of the fifth and sixth embodiments, the light absorbing member is the most It can be applied to at least the front surface or the end surface of each substrate. In addition, as shown by circle 26, a phosphorescent layer can be formed on the photoelectric conversion element to form an X-ray image pickup device. As described above, according to the present invention, In manufacturing a large-area photoelectric conversion device, the yield of each substrate can be increased, and the amount of money lost per substrate due to defects can be reduced, thereby effectively reducing the cost of the large-area photoelectric conversion device. In addition, according to this embodiment , By setting the size of the empty paper between the base and the fast-moving Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the back · intentions first to install-π write this page), ίτ Printed by the Central Government of the Ministry of Economic Affairs of the Shellfish Consumer Cooperative Co., Ltd. It -40-A7 B7 V. Description of the invention (38) When the value of 1.5 pixels is equivalent to the photoelectric conversion element, the photoelectricity is not formed. The data on each part of the switching element is the smallest, which can facilitate the data interpolation on the part where the photoelectric conversion element is not formed, and obtain fairly accurate data. Furthermore, according to this embodiment, the large area is manufactured.稹 The photoelectric conversion device can effectively improve the inspection steps, and therefore, it can achieve an increase in production volume and a reduction in the number of left parts. As a result, the cost of a large-sized photoelectric conversion device can be further reduced. Furthermore, according to In this embodiment, all photoelectric conversion elements are scanned in the same direction in a large-faced photoelectric conversion device, so a simple device can be used to perform signal processing at high speed. As a result, the cost reduction and performance of the photoelectric conversion device can be achieved (Please read the back " note t item on this page first) -ϋ m. Item again ^: this-book printed by the Central Bureau of Standards of the Ministry of Economy CNS) A4 size (210X297 mm) -41-

Claims

B8 C8 D8 b：j£l補充 Λ諳委8¾¾.示，本案妗後是否變更原實質内容經濟部中央揉準局貝工消費合作社印策六、申請專利範圍第851 1 1748號專利申請案中文申請專利範園修正本民國87年6月修正 1 . 一種光電轉換裝置，包含： (a )多數透明基底，毎個透明基底具有多數光電轉換元件在前表面上； (b ) —基礎構件用以支持該透明基底在前表面上：和 (c )光吸收構件設置在毎個透明基底之筷表面和該基礎構件之前表面間，和在毎個透明基底之端面上· 2 .如申請專利範園第1項之裝置，其中該光吸收梅件由當入射時，可降低該光電轉換構件之可吸收光材料所構成· 3 .如申請專利範圔第1項之裝置，其中該光吸收構件爲黑色材料或主要互補於欲由光電榑換元件所接收之光之顔色之顔色之材料· 4 .如申請專利範圔第1項之裝罝，其中該光吸收構件爲樹脂· '»· 5 ·如申請專利範園第1項之裝置•其中該光吸收構件爲一無機材料· - 6 .如申請専利範圍第1項之裝置，其中孩光吸收構件爲一金羼氧化物· 7 . ^申請專利範圔第1項之裝置，其中該光吸收構件爲以一染料或顔料著色之樹脂· 本紙張尺度適用中國國家橾率（CNS ) A4规格（2丨0X297公釐） (請先Μ讀背面之注意事項再填寫本頁) ------^------------------ B8 C8 D8 b：j£l補充 Λ諳委8¾¾.示，本案妗後是否變更原實質内容經濟部中央揉準局貝工消費合作社印策六、申請專利範圍第851 1 1748號專利申請案中文申請專利範園修正本民國87年6月修正 1 . 一種光電轉換裝置，包含： (a )多數透明基底，毎個透明基底具有多數光電轉換元件在前表面上； (b ) —基礎構件用以支持該透明基底在前表面上：和 (c )光吸收構件設置在毎個透明基底之筷表面和該基礎構件之前表面間，和在毎個透明基底之端面上· 2 .如申請專利範園第1項之裝置，其中該光吸收梅件由當入射時，可降低該光電轉換構件之可吸收光材料所構成· 3 .如申請專利範圔第1項之裝置，其中該光吸收構件爲黑色材料或主要互補於欲由光電榑換元件所接收之光之顔色之顔色之材料· 4 .如申請專利範圔第1項之裝罝，其中該光吸收構件爲樹脂· '»· 5 ·如申請專利範園第1項之裝置•其中該光吸收構件爲一無機材料· - 6 .如申請専利範圍第1項之裝置，其中孩光吸收構件爲一金羼氧化物· 7 . ^申請專利範圔第1項之裝置，其中該光吸收構件爲以一染料或顔料著色之樹脂· 本紙張尺度適用中國國家橾率（CNS ) A4规格（2丨0X297公釐） (請先Μ讀背面之注意事項再填寫本頁) ------^------------------ 經濟部中央標準局貝工消费合作社印製 A8 B8 C8 D8 六、申請專利範固 8 _如申請專利範_第1項之裝置，其中該光吸收構件爲選自由一環氧樹脂，一丙烯酸樹脂，和一矽酮樹脂所組成之群中之一樹脂· 9 .如申請專利範圔第1項之裝置，其中賅光吸收構件具有黏著功能· 1 0 .如申請專利範圓第1項之裝置·其中該光吸收構件爲設置在介於該基底間之空間中· 1 1 .如申請專利範園第1項之裝置，其中介於基底間之空間小於相關於該光電轉換元件之1.5圖索之值· 1 2 .如申請專利範困第1項之裝置，進一步包含一光電轉換器· 1 3 ·如申請專利範困第1 2項之裝置，其中該光轉換器爲磷？ 1 4 ·如申請專利範圔第12項之裝置，其中該光轉換器爲對所有基底之一共同靥· 1 5 ·如申請專利範園第1 2項之裝置，其中賅光轉換器提供用於毎個基底· 1 6 .如申請專利範園第1項之裝置，其中該基底爲一透明基底· 1 7 .如申請專利範圍第1項之裝置，其中該_礎爲一透明基礎· 1 8 .如申請專利範困第1項之裝置，其中該名礎具有大於多數基底之面稹和之面稂· 1 9 . 一種X射線影像拾取裝罝，包含：本紙張尺度逋用中國國家標準（CNS ) A4規格（2丨Ο X 297公釐） II -t----Q! (請先《讀背面之注f項再填寫本頁) 訂 -卞：，經濟部中央梂準局負工消费合作社印製 A8 B8 C8 D8__ 六、申請專利範固 (a)光電轉換機構，包括（i )多數透明基底•每個透明基底具有多數光電轉換元件在前表面上：（i i ) 一基礎構件用以支持賅透明基底在前表面上；和（i i i )光吸收構件設置在毎個透明基底之後表面和賅基礎構件之前表面間，和在每個透明基底之端面上·· (b ) X射線照射機構用以照射X射線：和 ( (c ) 一光轉換器用以接收又射線並產生具有不同波長之光· 2 0 .如申請專利範困第1 9項之裝置，其中該光吸收構件由當光入射時，可降低該光m轉換構件之可吸收材料所構成· 2 1 .如申請專利範園第1 9項之裝置，其中該光吸收構件爲黑色材料或主要互補於欲由光m轉換元件所接收之光之顔色之顏色之材料· 2 2 .如申請專利範園第1 9項之裝置，其中該光吸收構件爲樹脂· 2 3 .如申請專利範園第1 9項之裝置，其中賅光吸收構件爲一無機材料· 2 4 ·如申請專利範國第1 9項之裝置，其中賅光吸收構無爲一金屬氧化物· ^ 2 5 .如申請專利範園第1 9項之裝置，·其中該光吸收構件爲以一染^或顔料著色之樹脂· 2 6 .如申請專利範園第1 9項之裝置，其中該光吸收構件爲選自由一環氧樹脂，一丨丙烯酸樹脂，和—砂酮樹本紙張尺度適用中國國家橾準（CNS )八4洗格（2丨Ο X 297公釐） (請先Η讀背面之注$項再填寫本頁) (!· 訂經濟部中央橾率局負工消费合作社印*. A8 B8 C8 D8 六、申請專利範圍脂所組成之群中之一樹脂· 2 7 .如申請專利範困第1 9項之裝置，其中該光吸收構件具有黏著功能· 2 8 .如申請專利範園第1 9項之裝置，其中該光吸收構件爲設置在介於該基底間之空間中· 2 9 .如申請專利範園第1 9項之裝置，其中介於基底間之空間小於相關於該光電轉換元件之1.5圃索之值〇 3 0 .如申請專利範圖第1 9項之裝置，其中該光轉換器爲磷· 3 1 .如申請專利範園第1 9項之裝置•其中該光轉換器爲對所有基底之一共同層· 3 2 .如申請專利範面第1 9項之裝置，其中該光轉換器提供用於每個基底· 3 3 .如申請專利範園第1 9項之裝置•其中該基底爲一透明基底· 3 4 .如申請專利範困第1 9項之裝S ·其中該基碓爲一透明基礎· 3 5 .如申請專利範面第1 9項之裝置*其中賅基礎具有大於多數基底之面稹和之面稹· 3 6 ·如申請專利範团第1項之裝置，其·中該光吸收屠乃是由涵鍍法形成之一金屬氧化物· 3 7. ·如申請專利範園第1項之裝置，其中該光吸收靥爲應用一印刷方法和一塗覆方法之一黑色樹脂· 本紙張尺度逋用中國國家揲準（CNS ) A4规格（2丨0X297公釐） (请先《讀背面之注$項再樓寫本頁) 0. 订 SS _ _ 六、申請專利範固 3 8 ·如申請專利範園第1項之裝置，進一步包含一插值機檐用以在使用來自左和右光電轉換卞件之输出訊號而未形成光電轉換元件之空間中之一部份上插值資料· 3 9 .如申請專利範園第1項之裝置，其中具有和該基底相同構造之全部四個基底二維的在垂直和水平方向安排成2x2矩陣，並結合，而毎個基底可旋轉90· · 4 0 .如申請專利範園第1項之裝置，其-中產部四個基底，每個基底上面二維昀安裝光電轉換元件，乃二維的在垂直和水平方向結合成2 X 2矩陣，而具/有相同構造且互相不相鄰之四個結合基底之兩個基底互相相關的在一平面上旋轉180° ，該四個基底在相同方向掃描· 4 1 .如申請專利範团第1項之裝置，其中該基底包含： —光電轉換元件，其藉由叠層一第一電極餍•一絕緣層，一光電轉換半導«層*用以禁止第一導電型之載子之注入之一半導髏厝，和一第二《極層而形成；經濟部中央標準局貝工消费合作社印装 (请先Μ讀背面之注^•項再4寫本筲) 光電轉換機構，用以應用一電場至該光電轉換元件，以一方向，其中由訊號光所產生入射在光電轉、換f導體層上之第一導m型載子可受到保持，和與第一導重翟不同之第二導電型之載子受引導向著第二電極層； _—· 更新機構，用以應用一電場至賅光電轉換元件*以一方向，其中，第一導電型之載子由光m轉換半導體層引導向著第二電極靥：和了訊號偵測單元·用以在由該光電轉換機辨執行一光本紙張尺度逋用中國國家揉率（CNS > A4规格（210X297公釐) 經濟部中央標率局貝工消费合作社印*. _____^_ 六、申請專利範圍電轉換操作時•偵測儲存在光電轉搀半導髖層中之第一導電型之載子或引導至第二靥之第二導m型載子· 4 2 .如申請專利範園第1 9項之裝置，其中該光吸收層乃是由濺鍍法形成之一金屬氣化物· 4 3 ·如申請專利範圔第1 9項之裝置，其中該光吸收層爲應用一印刷方法和一塗覆方法之一黑色樹脂· 4 4 .如申請專利範圃第1 9項之裝置•進一步包含一插值機構用以在使用來自左和右光電轉換元件之输出訊號而未形成光電轉換元件之空間中之一部份上插值資料· 45 ·如申請專利範園第1 9項之裝置*其中具有和該基底相同構造之全部四個基底二維的盡垂直和水平方向安排成2 X 2矩陣，並結合•麗每個基底可旋轉9 Οβ · 4 6 .如申請專利範圔第1 9項之裝置，其中全部四個基底*每個基底上面二維的安裝光電轉換元件*乃二維的在垂直和水平方向結合成2 X 2矩陣，而具有相同構造且互相不相鄰之四個結合基底之兩個基底互相相關的在一平面上旋轉180β ，該四個基底在相同方向掃描· 4 7 ·如申請專利範園第1 9項之裝置，其中該基底包含：一光電轉換元件，其藉由叠層一第一霉極層* ^絕緣層，一光電轉換半導髏層，用以禁止第一導電型之載子之注入之一半導體層，和一第二m極層而形成j 光m轉換機構•用以應用一電場至該光電轉換元件，以一方向，其中由訊號光所產生入射在光電轉換半導髖曆本紙張尺度適用中國國家揉準（CNS ) A4規《格（210X297公釐） {請先S讀背面之注f項再填寫本頁) α· 訂 A8 B8 C8 D8 ____ 六、申請專利範圍上之第一導電型載子可受到保持，和與第一導電型不同之第二導電型之載子受引導向著第二電極餍：更新機構，用以應用一電場至該光m轉換元件，以一方向，其中，第一導電型之載子由光電轉換半導體層引導向著第二電極層：和 —訊號偵測單元，用以在由該光電轉換機構執行一光電轉換操作時，偵測儲存在光電轉換半導體層中之第一導電型之載子或引導至第二餍之第二導電型載子· (請先閱讀背面之注^^項再填寫本貰) 經濟部中央橾準局貞工消费合作社印装本紙張尺度適用中國國家揉準（CNS ) A4規格（2丨0X 297公釐）B8 C8 D8 b: j £ l supplemented Λ 谙 Committee 8¾¾. Indicate whether the original substance of the case will be changed in the future. The policy of the Central Government Bureau of the Ministry of Economy of the People's Republic of China, Shellfish Consumer Cooperative Co., Ltd. 6. The scope of patent application No. 851 1 1748 Chinese patent application Application for Patent Amendment Amendment June 1987 Amendment 1. A photoelectric conversion device comprising: (a) a majority of transparent substrates, each of which has a majority of photoelectric conversion elements on the front surface; (b) — a base member for Support the transparent substrate on the front surface: and (c) the light absorbing member is provided between the surface of the chopsticks of the transparent substrate and the front surface of the base member, and on the end surface of the transparent substrate. The device of item 1, wherein the light absorbing plum is made of an absorbable material that can reduce the photoelectric conversion member when incident. 3. The device of item 1 of the patent application, wherein the light absorbing member is Black material or material mainly complementary to the color of the light to be received by the photoelectric conversion element. 4. The decoration according to item 1 of the patent application, wherein the light absorbing member is resin · '»· 5 · If the device of the patent application park No. 1 is applied. · The light absorbing member is an inorganic material ·-6. If the device of the patent scope is applied, the light absorbing member is a gold oxide. 7. ^ Apparatus No. 1 of Patent Application 圔, where the light absorbing member is a resin colored with a dye or pigment · This paper size is applicable to China National Standard (CNS) A4 specification (2 丨 0X297 mm) (Please read the notes on the back before filling this page) ------ ^ ------------------ B8 C8 D8 b: j £ l Committee 8¾¾. Indicate whether the original substance of the case will be changed in the future. The policy of the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, India, Policy 6, Patent Application No. 851 1 1748, Chinese Patent Application, Patent Garden Amendment, June 87, Republic of China Amendment 1. A photoelectric conversion device comprising: (a) a plurality of transparent substrates, each transparent substrate having a plurality of photoelectric conversion elements on a front surface; (b)-a base member for supporting the transparent substrate on the front surface: and ( c) The light absorbing member is arranged on the surface of a chopstick with a transparent base and the foundation Between the front surface of the component and on the end surface of a transparent substrate. 2. The device according to item 1 of the patent application park, wherein the light absorbing plum is made of a light absorbing material that can reduce the photoelectric conversion component when incident. Composition 3. The device according to item 1 of the patent application, wherein the light absorbing member is a black material or a material mainly complementary to the color of the light to be received by the photoelectric conversion element. 4. If a patent is applied The decoration of the first item of the fan, where the light absorbing member is a resin · "» · 5 · Such as the device of the patent application of the first item of the fan garden · where the light absorbing member is an inorganic material ·-6. The device of item 1, wherein the light absorbing member is a gold oxide. 7. The device of item 1 of the patent application 1, wherein the light absorbing member is a resin colored with a dye or a pigment. China National Standard (CNS) A4 specification (2 丨 0X297 mm) (Please read the precautions on the back before filling this page) ------ ^ ------------- ----- Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Apply for patent Fangu 8 _ As in the patent application_ item 1, the light absorbing member is a resin selected from the group consisting of an epoxy resin, an acrylic resin, and a silicone resin. 9. The device according to item 1 of the patent application, wherein the light absorbing member has an adhesive function. 1 0. The device according to item 1 of the patent application, wherein the light absorbing member is disposed between the substrates. In the space · 1 1. The device according to item 1 of the patent application park, wherein the space between the substrates is smaller than the value of 1.5 maps related to the photoelectric conversion element · 1 2. The device further includes a photoelectric converter. The device according to item 12 of the patent application, wherein the optical converter is phosphorous. 1 4 · The device according to item 12 of the patent application, in which the optical converter is common to all of the substrates. 1 5 · The device in item 12 of the patent application, in which the optical converter is provided. On a substrate · 16. The device according to item 1 of the patent application park, where the substrate is a transparent substrate · 1 7. The device according to item 1 of the patent application, where the base is a transparent base · 1 8. The device according to item 1 of the patent application, wherein the base has a face larger than that of most substrates. 1 9. An X-ray image pickup device, including: This paper is in accordance with Chinese national standards (CNS) A4 specification (2 丨〇 X 297 mm) II -t ---- Q! (Please read the note f on the back before filling out this page) Order- 卞: The Central Ministry of Economic Affairs Printed by the Industrial and Consumer Cooperatives A8 B8 C8 D8__ VI. Patent Application Fangu (a) Photoelectric conversion mechanism, including (i) most transparent substrates • Each transparent substrate has most photoelectric conversion elements on the front surface: (ii) a basic component To support a transparent substrate on the front surface; and (iii) light absorption The components are arranged between the rear surface of a transparent substrate and the front surface of a base member, and on the end surface of each transparent substrate. (B) The X-ray irradiation mechanism is used to irradiate X-rays: and ((c) for an optical converter In order to receive the rays and generate light with different wavelengths, such as the device of item 19 of the patent application, the light absorbing member is made of an absorbable material that can reduce the light m conversion member when light is incident. Composition · 2 1. The device according to item 19 of the patent application park, wherein the light absorbing member is a black material or a material mainly complementary to the color of the light to be received by the light-m conversion element. 2 2. The device of the patent application No. 19, wherein the light absorbing member is a resin · 2 3. The device of the patent application No. 19, where the light absorption member is an inorganic material · 2 4 · If the patent is applied for Fan Guo's device of item 19, in which the light absorption structure is a metal oxide. ^ 25. For the device of patent application Fan Yuan item 19, in which the light absorption member is a coloring device with a dye or pigment. Resin · 2 6. Such as patent application The device according to item 19, wherein the light absorbing member is selected from the group consisting of an epoxy resin, an acrylic resin, and a sandone tree. The paper size is applicable to China National Standards (CNS) 8 4 wash grid (2 丨〇 X 297 mm) (Please read the note on the back of the page before filling in this page) (! · Ordered by the Central Government's Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives of the Labor Union *. A8 B8 C8 D8 VI. Patent Application Group One of the resins. 27. The device according to item 19 of the patent application, wherein the light absorbing member has an adhesive function. 2 8. The device, item 19 of the patent application, wherein the light absorbing member is Set in the space between the substrates · 29. For the device of the patent application No. 19, wherein the space between the substrates is less than the value of 1.5 corresponding to the photoelectric conversion element. For example, the device of patent application No. 19, wherein the light converter is phosphorous · 3 1. For device of patent application No. 19, where the light converter is a common layer for all substrates · 3 2. The device according to item 19 of the patent application, wherein the optical converter provides For each substrate · 3 3. Such as the device of the patent application Fanyuan item 19 · Wherein the substrate is a transparent substrate · 3 4. If the application of the patent application No. 19 item S · where the base is A transparent foundation · 35. If the device of the patent application scope item 19 * Among them, the 具有 foundation has a larger surface than the majority of the base surface 稹 · 3 6 · If the device of the patent application category item 1, its · The light absorption film is a metal oxide formed by a culvert plating method. 3. The device of item 1 in the patent application park, wherein the light absorption film is one of a printing method and a coating method. Black resin · This paper uses China National Standard (CNS) A4 size (2 丨 0X297 mm) (please read the note on the back and write this page first) 0. Order SS _ _ 6. Apply for a patent Fan Gu 3 8 · If the device of the patent application Fan Yuan No. 1 further includes an interpolation eaves to use the output signals from the left and right photoelectric conversion files without forming a part of the space of the photoelectric conversion element Up-interpolation data · 3 9. If the device of the patent application for the first item, which has and All four substrates with the same structure are arranged in a 2x2 matrix in the vertical and horizontal directions in two dimensions and combined, and one substrate can be rotated 90 ·· 40. If the device of the patent application for the first item is used, its- There are four substrates, and the photoelectric conversion elements are installed two-dimensionally on each substrate, which are two-dimensionally combined into a 2 X 2 matrix in the vertical and horizontal directions, and the four combined substrates with the same structure and not adjacent to each other. The two substrates are rotated 180 ° on a plane in relation to each other, and the four substrates are scanned in the same direction. 4 1. The device according to item 1 of the patent application group, wherein the substrate includes:-a photoelectric conversion element, A first electrode 餍 an insulating layer, a photoelectric conversion semiconductor «layer * to prevent the implantation of a carrier of the first conductivity type, and a second" polar layer "are formed; Ministry of Economic Affairs Printed by the Central Standards Bureau Shellfish Consumer Cooperative (please read the note ^ • item on the back and then write 4) Photoelectric conversion mechanism for applying an electric field to the photoelectric conversion element in one direction, which is generated by signal light Incident photoelectric conversion The first conductive m-type carrier on the f conductor layer can be held, and the second conductive type carrier that is different from the first conductive weight is guided to the second electrode layer; _- · update mechanism for application An electric field to the 赅 photoelectric conversion element * in one direction, in which the carriers of the first conductivity type are guided by the light m conversion semiconductor layer toward the second electrode 靥: and the signal detection unit is used to identify the Implementation of the Chinese paper kneading rate (CNS > A4 size (210X297 mm) of the paper size standard) Printed by the Shell Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs *. _____ ^ _ VI. Measure the first conductive type carrier stored in the photoelectric transconductor semiconducting hip layer or the second conductive m-type carrier guided to the second transconductor. 4 2. Such as the device of the patent application No. 19, where The light absorbing layer is a metal vapor formed by a sputtering method. The device according to item 19 of the patent application, wherein the light absorbing layer is black using a printing method and a coating method. Resin · 4 4. Device such as patent application No. 19 • One step includes an interpolation mechanism for interpolating data on a part of the space that does not form a photoelectric conversion element using the output signals from the left and right photoelectric conversion elements. · 45 · Such as the device of the patent application park No. 19 * Among them, all four substrates having the same structure as the substrate are arranged in a 2 X 2 matrix in a vertical and horizontal direction in a two-dimensional manner, and are combined. • Each substrate can be rotated 9 Ο β · 4 6. Item of the device, in which all four substrates * two-dimensionally mounted photoelectric conversion elements on each substrate * are two-dimensionally combined into a 2 X 2 matrix in the vertical and horizontal directions, and the four have the same structure and are not adjacent to each other The two substrates combined with the substrate are rotated 180β on a plane in relation to each other. The four substrates are scanned in the same direction. 4 7 The device according to item 19 of the patent application park, wherein the substrate includes: a photoelectric conversion element, It is formed by stacking a first mold layer * ^ insulating layer, a photoelectric conversion semiconductor layer, a semiconductor layer for prohibiting the carrier of the first conductivity type, and a second m-pole layer. j light m Change mechanism • Used to apply an electric field to the photoelectric conversion element in one direction, in which the light generated by the signal light is incident on the photoelectric conversion semiconducting hip calendar. The paper dimensions are applicable to the Chinese National Standard (CNS) A4 Regulation "Grid (210X297) (%) {Please read Note f on the back of the page before filling in this page) α · Order A8 B8 C8 D8 ____ VI. The first conductivity type carrier in the scope of patent application can be maintained, which is different from the first conductivity type The carrier of the second conductivity type is guided toward the second electrode 餍: a renewing mechanism for applying an electric field to the optical m conversion element in one direction, wherein the carrier of the first conductivity type is guided toward the photoelectric conversion semiconductor layer toward Second electrode layer: and—a signal detection unit, configured to detect a carrier of the first conductivity type stored in the photoelectric conversion semiconductor layer or guide it to the second electrode when a photoelectric conversion operation is performed by the photoelectric conversion mechanism. The second conductive type carrier (Please read the note ^^ on the back before filling in this card) The paper size of the printed paper is applicable to the Chinese National Standard (CNS) A4 specification (2)丨 0X 297 mm)