經濟部中央標準局員工消費合作社印褽 A7 B7 五、發明説明（1 ) 桉術領域 本發明主要是爲有關於進行固態型（solid)印刷基板或 福性（flexible)基板或未熟化層（green sheet等的材料加工 的雷射加工方法，是爲進行高品質盲孔（Blind Via Hole,稱 爲BVH>或穿孔（through hole稱爲TE〇的形成加工之所需 的雷射加工方法之相關技術。 按櫥背昼 第la圖爲表示在兩面形成菱銅箔2的絕緣層3所構 成的包銅基板CS，上作盲孔（Via hole)VH加工的習知加工 方法之圖。第lb圈爲表示在相同的包銅基板CS上進行穿 孔（through hole)TH加工的習知加工方法之圖。此習知之 加工方法，例如爲記載於特開平4-3676、特開平5-18478 或特開平5-37756,是在包銅基板CS以蝕刻形成孔洞4的 狀態下，照射以較該孔洞4爲大之直徑的雷射射束1。此 方法之特徵係爲具有以較蝕刻直徑爲大的射束直徑來進行 加工的特點。根掸此方法，則盲孔或穿孔的孔徑是由蝕刻 孔涓4來決定。 第2a圖爲表示僅在背面具有銅箔2的絕緣層3所構 成的絕緣基板IS上，進行盲孔VH加工的習知加工方法之 圖，第2b圖爲表示在相同的絕緣基板IS上進行穿孔TH 加工的習知加工方法之圖•這些方法係爲由於因近年來積 合（Built up>法之基板的積層技術的發展而被使用，是爲在 娩緣基板IS上進行肓孔或穿孔加工，並隨後作全面性的電 截而形成型樣（patteriO的一棰方法，此方法則是以雷射射 (請先閲讀背面之注^^項再填寫本頁) V裝·Employees ’Cooperative Cooperative A7 B7 of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) Eucalyptus Field The present invention is mainly related to the implementation of solid printed substrates or flexible substrates or uncured layers (green). Laser processing methods for processing materials such as sheets are related to laser processing methods required for forming high-quality blind via holes (called BVH > or through holes (through holes called TE)). Figure 1a is a diagram showing a conventional processing method of a copper-clad substrate CS composed of an insulating layer 3 with diamond copper foil 2 formed on both sides, and a blind hole (Via hole) VH processing. Circle lb It is a diagram showing a conventional processing method for performing through-hole TH processing on the same copper-clad substrate CS. This conventional processing method is described in, for example, JP-A-4-3676, JP-A-5-18478, or JP-A-Hei 5-37756, in the state where the hole 4 is formed by etching the copper-clad substrate CS, the laser beam 1 having a diameter larger than the hole 4 is irradiated. This method is characterized by having a larger diameter than the etching diameter. Beam diameter According to this method, the hole diameter of the blind hole or perforation is determined by the etching hole 4. Figure 2a shows the blind hole on the insulating substrate IS composed of the insulating layer 3 with the copper foil 2 on the back surface. Figure 2 shows a conventional processing method for VH processing. Figure 2b shows a conventional processing method for performing TH processing on the same insulating substrate IS. These methods are due to the accumulated (Built up > The development of the substrate lamination technology is used to form a pattern (a method of patteriO) for countersinking or perforation processing on the substrate IS, followed by a comprehensive electrical cut. She She (Please read the note ^^ on the back before filling this page) V Pack ·
W 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） 1 39820 經濟部中央榡準局貝工消资合作社印製 A7 B7 五、發明説明（2 ) 束1的直徑來決定孔徑。 使用雷射以作爲印刷基板的加工，除了前述之肓孔或 穿孔之外，更有類似於盲孔之形態的更大面積的除去加工 等•一般來說，以雷射所作的加工，係大部份爲自單面惻 來作加工。 此外，在雷射加工的情形中，因爲是非接觸性的加工， 故不需如嫌孔加工般的使用擋板，通常是對被加工物的加 工對象面直接以雷射照射》 以第la匾及第lb圖所示的方法來進行加工之際，在 雷射射束1爲低次模式之狀態下，當射束1和蝕刻孔洞4 的位置關係如發生錯開時，即有在加工孔洞的傾斜度上發 生如第3a圖及第3b圖的偏位情形，如此之偏位由於關係 著形成電镀的不良，而不受歎迎。 而且如此之加工方法，由於開口徑是受到銅箔的限制， 加工時所產生的樹脂的氣化熱不易散除，經內層銅箔2反 射的雷射射束亦進而經表面銅箔2的反射，則如第4圖所 示般的，加工孔涓的壁面爲較蝕刻孔徑會有鼓起的傾向存 在。特別是在最近逐年增加的薄型絕緣層的基板的盲孔加 工中，此傾向最爲明顯 絶緣基板IS在經雷射進行直接盲孔或穿孔加工之後， 即實施電镀。因此，相較於包銅基板CS，其剝離強度較爲 低劣》這是由於包銅基板CS爲將銅箔2作貼合時採沖床 的作業處理，故銅箔2與絕緣層3爲緊密接合者•因此在 加工後經蝕刻處理而形成型樣時，型樣和铯緣層3的拉張 ------^--Ί.,·裝------訂----- - W1 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家梂準（CNS ) A4規格（210X297公釐） 2 39820 經濟部中央標準局員工消费合作社印製 A7 B7_ 五、發明説明（3 ) 強度高。若不克服此點，則難以使用絕緣基板IS。 基板的構成有著各種型態，有時候在基板背面與加工 植之間產生出間隙·而由於如此之間隙或基板自身的穿孔 TH的存在，碳化物即牢固附著於基板背面，而妨害電镀處 理· 而且，於雷射的特性，在営由軍面作穿孔TH加工時， 即形成傾斜，相較於雷射入射側的孔徑，出射側的孔徑較 小，故將基板稹層時，穿孔上有發生段差的問題。 而且在對被加工物的加工對象面直接照射雷射時，依 視情況，表面的孔洞形狀會有變形。而當表面的孔洞形狀 變形，則在電鍍後，應力僅集中於某特定的部份，而有自 此部份發生破斷的可能性存在。 本發明之掲示 本發明之雷射加工方法係爲在具備有絕緣層和該絕緣 層上設置有銅層的基板，以雷射射束來進行開孔加工的雷 射加工方法當中，是爲藉由蝕刻處理以選擇性的除去基板 上應開孔之位置上的銅層，在銅層上形成較絕緣層上應開 孔的孔徑爲大的直徑的蝕刻孔洞而使絕緣層蕗出，再對自 蝕刻孔洞露出的絕緣層上，照射對應於應開孔的直徑的雷 射射束，用以在絕緣層上進行開孔的一種雷射加工法•根 據此方法，其加工特性是和對絕緣基板作雷射加工的情形 相等，且能獲得型樣的剝離強度是和包銅基板相等者》 又，本發明係爲在對被加工物照射雷射射束而在被加 工物進行開孔加工的加工方法當中，爲具有對被加工物的 -—-> ------p--1'裝------訂-----Ί卞 . /1.-. (請先閲讀背面之注意事項再填寫本頁) 本紙法又度適用中國國家標準（CNS ) A4規格（210X297公釐） 3 39820 經濟部中央標準局貝工消费合作社印製 A7 B7 五、發明説明（4 ) 開孔位置上，自被加工物的兩面，照射雷射射束之特徴的 雷射加工方法· 另，本發明係爲在對被加工物照射雷射射束而除去被 加工物之材料之加工方法當中，爲具有對被加工物的兩個 面的除去加工位置所相對應之位置，照射雷射射束而自被 加工物淸除緣於除去加工所產生的異物之特徵的雷射加工 方法。 且，本發明係爲在對被加工物照射雷射射束而除去被 加工物的材料之加工方法當中，爲具有對被加工物的兩個 面的除去加工位置所相對應之位置，同時或錯開時間照射 雷射射束之特徵的雷射加工方法》 進而，本發明係爲在對被加工物照射雷射射束而除去 被加工物的材料之加工方法當中，爲具有被加工物的除去 加工位置所相對應之位置，經由後續工序而密著可剝離的 薄膜層或板材，且對除去加工位置照射雷射射束，而在去 除薄膜層後進行被加工物的材料之除去加工爲特徵的雷射 加工方法》 醣面之鮪翬說职 第la圖爲表示在包飼基板上進行盲孔加工的習知加 工方法· 第lb圖爲表示在包銅基板上進行穿孔加工的習知加 工方法》 第2a圖爲表示在絕緣基板上進行肓孔加工的習知加 工方法· ------,---if 裝------訂----- (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 4 39820 經濟部中央標準局負工消费合作社印製 A7 B7 五、發明説明（5 ) 第2b豳爲表示在絕緣基板上進行穿孔加工的習知加 工方法· 第3a圖爲在使用習知加工法形成盲孔於包銅基板上 時蝕刻孔桐舆射束位置有偏差時的加工壁面之形狀的模式 豳- 第3b圈爲在使用習知加工法形成穿孔於包銅基板上 時蝕刻孔洞與射束位置有偏差時的加工壁面之形狀的模式 國。 第4圖爲在使用習知加工法形成肓孔於包銅基板上時 加工孔洞壁面鼓起時的加工壁面之形狀的模式圖。 第5a圖爲表示依據本發明之加工方法所形成的盲孔 的模式圖。 第5b圖爲表示依據本發明之加工方法所形成的穿孔 的模式圖。 第6圖爲表示加工孔涓壁面之形狀的評價方法之圖。 第7a圖爲表示習知加工方法所加工的孔洞彤狀的測 定結果的曲線圖》 笫7b圖爲表示本發明之加工方法所加工的孔洞形狀 的測定結果的曲線圖· 笫8®爲表示形成保護膜於基板背面而加工的方法的 槪念圖· 第9 Η爲表示對基板表背面照射雷射而對表面加工時 防止除去物質附著背面之方法的槪念圖》 第10a圖爲表示依不同加工方法於基板背面的附著物 ------------JC 裝------、灯-----!τ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐〉 5 39820 經濟部中央標準局貝工消费合作社印聚 A7 _ B7五、發明説明（6) 的釐差之比較的曲線圖。 第10b圖爲使用於第10a豳的比較試驗的試驗材料的 平面圖- 第11圖爲表示單面加工和兩面加工的穿孔加工時的 表背的孔徑之比較的曲線圖。 笫12圖爲複數照射時之基板表面的孔徑之變化過程 的槪念圖》 第13圖爲貼有薄膜，抑制複數照射時之基板表面的 孔徑變化之機構的槪念圖》 第14圖爲表示薄膜之有無的表面孔洞之真圓度參差 之比較的曲線圖。 第15圖爲表示微細孔加工時的薄膜厚度和基板表面 之孔徑鼷係的曲線圃。 本發昍夕啬佳官施形菔 (實施例1) 第5a画爲表示本發明之加工方法所形成之盲孔VH之 模式圖。笫5b麵爲表示本發明之加工方法所形成之穿孔TH 之模式圖。由這些圖中即可理解，本發明之加工方法，係 爲對絕緣層3的兩面具有銅箔2的包銅基板CS，作成較最 後所需的加工孔徑稍大的蝕刻孔洞4，並透過該蝕刻孔洞 4而對絕緣層3以較蝕刻孔洞4爲小之直徑的雷射射束來 作孔洞加工，在絕緣層3上進行较蝕刻孔洞4爲小之直徑 的加工孔洞5的加工處理之技術•根據此方法，其加工性 係和對絕緣基板IS作雷射加工的情形相等，並且型樣的剝 (請先閱讀背面之注意事項再填寫本頁) tW The size of this paper applies Chinese National Standard (CNS) A4 (2 丨 0X297 mm) 1 39820 Printed by A7 B7, Shellfish Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of the invention (2) The diameter of bundle 1 is determined Aperture. In addition to the above-mentioned countersinking or perforation, the laser is used for the processing of printed substrates. In addition to the large-area removal processing similar to the form of blind holes, etc. • Generally, the processing by laser is large. Some of them are processed from single-sided concrete. In addition, in the case of laser processing, because it is non-contact processing, there is no need to use a baffle like suspected hole processing. Usually, the processing object surface of the processed object is directly irradiated with laser. When the laser beam 1 is in the low-order mode and the positional relationship between the beam 1 and the etching hole 4 is staggered, there is a possibility that the hole is being processed. The deviation occurs as shown in Figures 3a and 3b on the inclination. Such a deviation is not welcomed because it is related to the formation of poor plating. Moreover, in this processing method, since the opening diameter is limited by the copper foil, the vaporization heat of the resin generated during processing is not easily dissipated, and the laser beam reflected by the inner layer copper foil 2 also passes through the surface copper foil 2. As shown in FIG. 4, the reflection tends to bulge on the wall surface of the processed hole as compared with the etched hole diameter. Especially in the blind hole processing of the thin insulating layer substrate which has been increasing year by year, this tendency is most obvious. The insulating substrate IS is electroplated after being directly blind holed or perforated by laser. Therefore, compared with the copper-clad substrate CS, its peeling strength is relatively low. This is because the copper-clad substrate CS is a processing operation of a punch press when the copper foil 2 is bonded, so the copper foil 2 and the insulating layer 3 are tightly bonded. • Therefore, when the pattern is formed by etching after processing, the pattern and the stretching of the cesium edge layer 3 -------- ^-Ί., · 装 -------- order ---- --W1 (Please read the notes on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 2 39820 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7_ V. Description of the invention (3) High strength. If this is not overcome, it will be difficult to use the insulating substrate IS. The structure of the substrate has various types, and sometimes a gap is generated between the back surface of the substrate and the processing plant. Due to such a gap or the existence of the hole TH in the substrate itself, carbides firmly adhere to the back surface of the substrate, which hinders the plating process. · Furthermore, due to the characteristics of the laser, when the TH is processed through the military surface, the hole is inclined. Compared with the aperture on the incident side of the laser, the aperture on the exit side is smaller. There is a problem that a step difference occurs. In addition, when the laser beam is directly irradiated on the processing target surface of the workpiece, the shape of the hole on the surface may be deformed depending on the situation. When the shape of the hole on the surface is deformed, after plating, the stress is concentrated only on a specific part, and there is a possibility of breakage from this part. According to the present invention, the laser processing method of the present invention is a laser processing method in which a substrate is provided with an insulating layer and a copper layer is provided on the insulating layer, and a laser beam is used to perform hole processing. The copper layer on the substrate should be selectively removed by the etching process, and an etching hole having a larger diameter than the hole that should be opened on the insulating layer is formed on the copper layer to scoop out the insulating layer. A laser processing method for irradiating a laser beam corresponding to the diameter of a hole to be irradiated on an insulating layer exposed from an etched hole. According to this method, its processing characteristics The case where the substrate is subjected to laser processing is the same, and the peel strength of the pattern that can be obtained is equal to that of the copper-clad substrate. Also, the present invention is to perform a hole-cutting process on the workpiece in order to irradiate the workpiece with a laser beam. Among the processing methods, there is ----- > ------ p--1'packing --- ordering --- Ί 卞. /1.-. (Please read the precautions on the back before filling out this page) This paper method is also applicable to China National Standard (CNS) A4 specifications 210X297 mm) 3 39820 Printed by A7 B7, Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of the invention (4) At the position of the hole, from both sides of the workpiece, the special laser processing method is irradiated with the laser beam In addition, in the present invention, in the processing method of irradiating the workpiece with a laser beam to remove the material of the workpiece, the present invention has a position corresponding to a removal processing position on both sides of the workpiece, and irradiates A laser processing method for removing a laser beam from a workpiece to remove foreign matter generated during processing. In addition, the present invention is a processing method for irradiating a workpiece with a laser beam to remove the material of the workpiece, and is a position corresponding to a removal processing position on both sides of the workpiece, or simultaneously Laser processing method for irradiating laser beams with staggered time characteristics "Furthermore, the present invention relates to a processing method for removing material of a workpiece by irradiating the laser beam to the workpiece to remove the workpiece. The position corresponding to the processing position is characterized in that a peelable film layer or sheet is adhered through a subsequent process, a laser beam is irradiated to the removal processing position, and the material of the workpiece is removed after the film layer is removed. "Laser processing method" of sugar noodles. Figure la shows a conventional processing method for blind hole processing on a feed substrate. Figure lb shows a conventional processing for perforation processing on a copper-clad substrate. Method "Figure 2a shows a conventional processing method for countersinking on an insulating substrate. ------, --- if mounting ------ order ----- (please read first (Notes on the back then fill out this page) Paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) 4 39820 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (5) Part 2b 豳 indicates that the insulating substrate is perforated. The conventional processing method · Figure 3a shows the pattern of the shape of the processing wall surface when the position of the beam of the etching hole is deviated when the blind hole is formed on the copper-clad substrate using the conventional processing method.-Circle 3b is in use A conventional processing method is used to form a pattern of a shape of a wall surface to be processed when an etching hole is deviated from a beam position when perforated on a copper-clad substrate. Fig. 4 is a schematic view of the shape of the processed wall surface when the wall surface of the processing hole is bulged when a counterbore is formed on a copper-clad substrate by a conventional processing method. Fig. 5a is a schematic view showing a blind hole formed by the processing method of the present invention. Fig. 5b is a schematic view showing a perforation formed by the processing method of the present invention. Fig. 6 is a diagram showing an evaluation method of the shape of the wall surface of the machining hole. Fig. 7a is a graph showing the measurement result of the hole shape processed by the conventional processing method. "笫 7b is a graph showing the measurement result of the hole shape processed by the processing method of the present invention. A schematic diagram of a method for processing a protective film on the back surface of a substrate. Fig. 9: A schematic diagram showing a method of irradiating a surface of the substrate with a laser to prevent the removal of substances from adhering to the back surface during surface processing. Processing method attachments on the back of the substrate ------------ JC mounting ------, lamp -----! Τ (Please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 × 297 mm) 5 39820 Printed Poly A7 _ B7 printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Fig. 10b is a plan view of the test material used in the comparison test of Fig. 10a 第-Fig. 11 is a graph showing the comparison of the hole diameters of the front and back surfaces during the single-side processing and the double-side perforation processing. Of the pore diameter of the substrate surface Figure 13 is a diagram of a mechanism with a film attached to suppress the change in the pore diameter of the substrate surface during multiple irradiations. Figure 14 is a graph showing the comparison of the roundness variation of the surface holes of the film. Fig. 15 is a graph showing the relationship between the thickness of the film and the pore diameter of the substrate surface during micro-hole processing. The present invention is shown in Fig. 5 (Example 1). Fig. 5a is a drawing showing the processing method of the present invention. Schematic diagram of the blind hole VH. 笫 5b is a schematic diagram showing the perforation TH formed by the processing method of the present invention. From these figures, it can be understood that the processing method of the present invention is provided on both sides of the insulating layer 3. The copper-clad substrate CS of the copper foil 2 is made into an etching hole 4 having a larger processing aperture than the last required, and the insulating layer 3 is passed through the etching hole 4 with a laser beam having a diameter smaller than that of the etching hole 4. As a hole processing technology, the processing of processing holes 5 with a smaller diameter than the etching holes 4 on the insulating layer 3 is performed. According to this method, the processability is equivalent to that of the laser processing of the insulating substrate IS, and Pattern stripping Matters to read the back of the note and then fill in this page) t
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A 本紙張尺度適州中國國家標準（CNS ) A4規格（210X297公釐） 6 39820 經濟部中央標準局貝工消费合作社印製 A7 ______B7___ 五、發明説明（7 ) 離強度亦能獲得與包銅基板CS同等的數値- 在笫6圖係爲表示以習知方法對於包銅基板CS的蝕 刻孔桐4，照射以較該孔洞爲大直徑的射束來加工絕緣層 3之情形，以及在絕緣層3進行較蝕刻孔洞4爲小之孔徑 加工之情形作比較的評價方法•孔洞壁面之彤狀的品質比 較是如第6圖所示，是以在表面部的孔徑和在加工孔洞之 深度方向的中間部的孔徑之兩者的差L的測定爲依據來進 行比較。 若測定値L之値爲負，則表示孔洞壁面爲硏钵狀的傾 斜形狀，其電鍍附著性亦佳。反之若爲正，則在孔洞的中 間部的孔洞鼓起而壁面凹進，其電鍍附著性亦低劣》而L=0 時，孔洞是爲直線。由此特點考量，可判定出測定値爲負 時是爲良品，爲正時是爲不良品。 第7a圖爲表示依撺第6圖所示之方法來測定習知之 加工方法所加工的孔洞形狀之結果的曲線圖》第7b圖爲 表示依據第6圖的方法之本發明之加工方法所加工的孔洞 形狀之測定結果的曲線圖。於這些曲線圖中，縱軸係爲表 面部的孔徑和加工孔洞中間部的孔徑之兩者的差L(mm)， 横軸係爲雷射照射發射數（次），就各種能量密度（mj/mm2) 之有關變化的表示·又，被加工材料係爲以環氧（epoxy)系 樹脂的絕緣層tO. 1mm來作張貼銅的處理·相對於習知例 的蝕刻孔徑9〇.lmm,以φΟ.3mm的照射射束徑所加工之習 知技術，本發明則是對触刻孔徑0.3mm，而以φΟ.1mm的照 射射束來加工》 -----K--Ί-lc^—-----訂------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適Λ中國國家標準（CNS ) Λ4規格（210X297公釐） 7 39820 經满部中央標準局負工消f合作社印掣 A7 _B7__ 五、發明説明（8 ) 能量密度高而雷射照射發射數愈多第6圖的測定値L 則有愈大的傾向》但在習知加工方法中，L之値有顯示爲 正値之情形（孔洞壁面往外側鼓起〉，然而根據本發明之方 法，即使L之値最大也只是0而已，故沒有孔涓壁面往外 側鼓起的情形。 (實施例2> 由於基板具有各種不同之構成，故有時候在基板背面 和加工槿桌之問會有間隙，而由於像如此之間隙及穿孔的 存在，在基板表面的雷射加工所發生的碳化物等的除去物 質，侵入基板背面而牢固地附著，形成妨礙電鍍的一種狀 態。 如第8圖所示，緣於穿孔TH的存在或其他理由，在 基板IS的背面和加工槿桌（未圖示）之間產生了間隙（未圖 示）的基板IS中，在作其他加工（圖中的情形雖是盲孔BVH， 但穿孔TH加工亦同）時所發生的除去物質等的異物7，即 通過穿孔TH或其他的間隙而附著於基板IS的背面。而 爲了防止此情形，傳統上是如第8圈所示，預先在基板IS 的背面的銅箔2的上面，形成膠片或薄膜等的保護膜8以 防止異物7的附著•但是，此方法則必須要有黏貼膠片8 的工序，且在下個工序前亦必須剝離腠片8，故工序作業 數增多而造成效率不佳。 根據本發明之方法，首先如第9圖之左半部所示，先 在基板IS的表面照射雷射射束1來進行加工。此時，如該 圖所示般地，除去物質的異物7爲通過穿孔TH而附著於 -----裝------訂------.—.Φ*· (請先閲讀背面之注f項再填寫本頁) 本紙张尺度適州中國國家標準（CNS ) Λ4規格（21〇X 297公釐〉 8 39820 經濟部中央標隼局貝工消费合作社印^ A7 B7 _ 五、發明説明（9 ) 背面的銅箔2上”接著，如第9圖之右半部所示般地，反 轉該異物7所附著的基板IS而霣出背面，再次照射雷射射 束1而除去附著物7· 爲了確認本發明所達成的功效，對有關第9圖所示的 本發明之兩面照射方法所加工的基板，和第8圖所示之使 用保護膜8的方法所加工的基板，以及在無保護膜8自軍 一面進行一般加工的基板等各個加工後的附著異物7的量， 進行檢查，其結果示於第l〇a圖，而所使用之試驗材料示 於第10b圖。而爲了檢查附著量，如第10b圖所示，對單 一面貼合著20mni><5 mm的銅箔2的基板3(樹脂爲聚醯亞 胺poly imide，厚度50# m)自樹脂側在正方形9所示的範圍 內進行lOmmXlOmm的加工•而爲了能容易顯示出樹脂材 料的異物7的向四遇侵入的效果，基板IS是不緊密著於加 工植桌（未圖示）上，而固定於槿桌上10mm的位置。附著 物7的量爲以佔有単位面稹的附著物7的面積來作依據。 由第l〇a圖可知，在表面加工後，經對背面進行雷射的照 射處理，即顯著地減低附著量。又，附著量的測定對貼有 保護膜8之基板是在撕掉保護膜8之後來测定》 (實施形態3) 此外，由於雷射的特性，當自基板的軍一面進行穿孔 加工時，穿孔的內壁面即形成爲傾斜狀，較之射束射出側 的孔徑射束入射俩的孔徑爲小，在將基板稹層時，穿孔的 內壁面即成段差而有對電鍍之連績性或附著性有不良影響 的問題》 -----rI------訂------—Ί (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS > Λ4規格（210X297公釐） 9 39820 M濟部中央標準局負Jr消费合作社印製 A7 B7 五、發明説明（10) 根據本發明，藉由自基板兩面進行雷射照射以形成穿 孔的處理，而能達成穿孔的表面孔徑和背面孔徑爲大致相 等之狀i · 第11圖爲有關於僅自單一面加工之情形和將單一面 加工後的基板反轉而自兩面加工的情形下的穿洞加工的表 面孔徑舆背面孔徑之比較結果之曲線顯示》被加工材料係 爲FR-4板（厚度t = 200#m>·加工條件則都是以相當於1 脈衡的能量爲4mj,且頻率爲40HZ·照射發射次數則在軍 一面的場合是爲投入10發射數，而兩面的場合是爲分別 自各個面，各投入5發射數”由第11圖的曲線即明示出，自 單一面所作的照射加工中，表面孔徑爲約120/zm時背面孔 徑則約60i/m，而相對於背面孔徑是約表面孔徑的50%之 情形，在自兩面所作的照射加工的場合中，表面孔徑是約 100#m,而背面孔徑亦約100/zm的倩形，背面孔徑是大致 和表面孔徑爲相同孔徑（約100%)。 (實施形態4) 於實施形態2及3當中，爲說明了能對基板IS的兩而 照射雷射射束1而反轉基板，但亦能自基板IS的兩面側， 同時地或賦以時間差來進行雷射射束1的照射•而依嫌此 方法，較之於反轉基板IS的場合是能大:幅地縮短時間·例 如，寅施形態3所示之穿洞TH加工中，當在加工1〇,〇〇〇 個孔洞時，以計電流掃描器（gaWanoscanver)來確定孔洞位 置需費時2.0ms，故開孔10,000個孔洞之確定位置所需時 問爲（10,000-1>Χ 2.0/1000 = 19.998秒•而自軍一面對各孔 -----^--------IT----- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標绛（CNS ) Λ4規格（2Ϊ0Χ297公釐） 10 39820 經满部中央標準局負工消#合作社印^ A7 B7 五、發明説明（11 ) 洞以40HZ作10次照射發射，則須（l〇-l)/4〇X10,〇〇〇+19. 998 = 2269.998秒-此値係爲以反轉基板is的方法，並不計 算反轉命間所必須的最低加工時間·故實際上是必須要有 更長的時間*另一方面，在作兩面同時加工的情形時，在 不需要反轉時間的狀態下，只要分別對単一面照射5次發 射所須的照射即可，故爲2269.998/2=1134.998秒，即加工 所須之時藺只要一半即可完成》 (寅施形態5) 對被加工物的加工對象面直接照射雷射時，視當時之 條件，表面的孔洞形狀會變形。例如，以一般雷射進行印 刷基板的開孔加工時係照射複數的發射次數，而特別是在 碳酸氣雷射的情形時，爲了縮短加工時間，大多使用計電 流掃描器。此種裝置因係髙速操作，故易產生振動，在以 雷射射束所作之對基板的開孔加工作業中，如第12圖所 示，即使是些微的振動，亦是形成第12圖左半部所示之第 一次的發射，和右半部所示之第2次的發射之間的射束之 位置的偏離原因，而表面的加工孔洞之形狀的變形的同時， 亦產生了第一次發射所作的孔洞，和第2次發射所作的孔 洞之間的偏離•當表面的加工孔洞變形之際，電鍍後應力 即集中於某部份，而由此部份即可能發生破裂斷開· 第13圖爲表示本發明之加工方法·亦即，在加工基 板3的表面上，貼有可吸收雷射能量的薄膜狀的聚乙稀等 的榭脂薄膜12，而由該處上面照射以雷射射束1來進行開 孔加工。如此之在表面上貼有樹脂薄膜12的狀態下進行 -----1--Ί.ί{^------訂-----I 線ι·~ (請先閲讀背面之注$項再填寫本頁) 本紙張尺度適用中國國家標锋(CNS>A4規格（210X29*7公釐） 11 39820 經濟部中央標隼历負工消费合作社印紫 A7 B7 五、發明説明（12) 加工之際，即如第13圖的左半部所示和右半部所示般地， 承受振動等的位置偏離的影響則僅是薄膜12而已，實際 上對基被的絕緣層3的加工孔洞並不造成問題。 如此之作業下，對無貼有薄膜12的基板和貼有薄膜12 的基板之進行孔洞加工時，所測定的表面孔徑的真圓度的 參差的結杲，示於第14圖之曲線。被加工材料爲環氧樹 脂（epoxy,厚度Ι50μ«〇構成，作φΙΟΟμιη的孔洞加工》加 工條件係1脈衡軍位的能量爲2mj，頻率爲10ΗΖ作2次發 射的照射》真圓度爲短徑/長徑X 1〇〇，測定則是對無貼有 薄膜的基板在加工的隨後及貼有薄膜的基板在撕掉薄膜後 的各25個孔洞，進行測定。由第14圖明顯的呈獻出，貼 有薄膜12的基板的孔洞的真圓度爲高，且偏離亦少。 此外，如實施形態3所示，以雷射射束1自基板IS的 軍一面進行孔洞加工時，孔洞的內壁面是爲傾斜狀，而傾 斜的前端部其孔徑是變小》因此，搭配此加工現象而來的 孔徑變小及貼有薄膜12的基板IS的孔洞的真圓度爲高的 兩種倩況，則可達成真圓度高的微細孔洞的加工。第15 画之曲線爲表示薄膜12的厚度與基板IS表面的孔徑之關 係*被加工材料爲環氧樹脂厚度30 #πι之基板12·加工條 件爲1脈衡單位的能量是lmj·頻率10ΗΖ，薄膜12的表 面的孔徑是作成Ρ80#πι。此外，發射次數係爲能達及於內 層鎇箔爲止的加工而配合著薄膜12的厚度來作各種變化。 即如該曲線所顯示，具有薄膜12變厚則基板表面的孔徑 變小的傾向** (婧先閲讀背面之注意事項再填寫本頁) 、1Τ 本紙張尺度適州中國國家標準（CNS ) Λ4規格（210X 297公釐） 12 39820 A7 B7 五、發明説明（13) 產業卜.的利用可能 本發明之雷射加工方法，係爲在俱備有絕緣層和在該 絕緣層土裝設有¥層的基板上，藉由雷射射束來進行開孔 加工的雷射加工方法當中，將位於應作基板上開孔之位置 上的銅層，以蝕刻作選择性的除去，而在铜層上形成較應 開孔於絕緣層上的孔洞爲大之直徑的蝕刻孔洞，而雳出絕 緣層，再自蝕刻孔洞，照射對應於應開孔於第出的絕緣屏 之孔铜的直徑之雷射射束，以在絕緣層上進行開孔的雷射 加工方法》根據此方法，其加工特性爲和對絕緣基板作雷 射加工的情形相等，且能獲得其型樣的剝離強度爲和包銅 基板同等之値》 此外，本發明係爲在對被加工物照射雷射射束而對被 加工物進行開孔加工的加工方法當中，爲具有被加工物的 兩面對被加工物的開孔加工的位置，照射雷射射束之特徵 的雷射加工方法。因此，能抑制穿孔加工時的傾斜度的發 生，可作接近於直線的孔洞加工。 經濟部中央橾準局負工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 此外，本發明係爲在對被加工物照射雷射射束而除去 被加工物之材料的加工方法當中，爲具有對被加工物的兩 面的除去加工位置所相對應的位置，照射雷射射束> 而自 被加工物淸除因除去加工所產生的異物，之特徵的雷射加工 方法。而根據此方法，能抑制後續工程中之不良發生率· 並且，本發明係爲在對被加工物照射雷射射束而除去 被加工物的材料的加工方法當中，爲具有對被加工物的兩 面的除去加工位置所相對應的位置，同時或錯開時間照射 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 13 39820 A7 B7 五、發明説明（14) 雷射射束之特徴的雷射加工方法。如此方法，由於是自被 加工物的表背兩個方向，同時或以稍許時間差來作加工， 故能進行高品質且加工時間爲短的加工作業** 而且，本發明係爲在對被加工物照射雷射射束而除去 被加工物的材料之加工方法當中，爲具有在被加工物的除 去加工位置所相對應的位置上，經往後績工序的作業而密 著有可剝離的薄膜層或板材，在對除去加工位置照射雷射 射束而於去除薄膜層之後，進行被加工物的材料之除去加 工爲特徵的雷射加工方法。如此之方法，由於是在被加工 物的表面密著有薄膜的狀態下進行加工，故能抑制加工對 象面上的孔洞形狀的偏差，而且能在基板上形成細微的孔 洞- (請先閱讀背面之注意事項再填寫本頁) 訂A This paper size is suitable for China National Standards (CNS) A4 specifications (210X297 mm) 6 39820 Printed by Shelley Consumer Cooperative, Central Standards Bureau of the Ministry of Economic Affairs A7 ______B7___ V. Description of the invention (7) The strength of the copper plate can also be obtained The equivalent number of CS-Figure 6 shows the case where the etching layer 4 of the copper-clad substrate CS is etched by a conventional method, and the insulating layer 3 is processed with a beam having a larger diameter than the hole. An evaluation method for comparing the case where the pore size of the etched hole 4 is smaller than that of the etched hole 4. The comparison of the quality of the hole wall surface is shown in FIG. A comparison is made based on the measurement of the difference L between the two pore diameters in the middle portion. If the measurement of 値 L is negative, it means that the wall surface of the hole has a slanted bowl-like shape, and its plating adhesion is also good. On the contrary, if it is positive, the hole in the middle of the hole bulges and the wall surface is recessed, and its plating adhesion is also low. ”When L = 0, the hole is straight. Based on this characteristic consideration, it can be judged that when the measurement is negative, it is good and when it is positive, it is bad. Fig. 7a is a graph showing the results of measuring the hole shape processed by the conventional processing method according to the method shown in Fig. 6 ". Fig. 7b is a view illustrating the processing method of the present invention according to the method of Fig. 6 Graph of the measurement results of the hole shape. In these graphs, the vertical axis is the difference L (mm) between the hole diameter at the surface and the hole diameter at the middle of the processed hole, and the horizontal axis is the number of laser irradiation emissions (times). For various energy densities (mj / mm2) Representation of changes related to the material to be processed is an epoxy resin-based insulating layer tO. 1mm for copper post processing. Compared to the conventional etching hole diameter of 9.1mm, With the conventional technology of processing with a beam diameter of φ0.3mm, the present invention processes the engraved aperture of 0.3mm, and processes with a beam of φ0.1mm "----- K--Ί-lc ^ —----- Order ------- (Please read the notes on the back before filling this page) The paper size is suitable for Λ Chinese National Standard (CNS) Λ4 specification (210X297 mm) 7 39820 The Central Bureau of Standards of the People ’s Republic of China ’s Ministry of Work and Industry Cooperative Cooperative Association A7 _B7__ V. Description of the Invention (8) The higher the energy density and the more the number of laser radiation emissions, the greater the tendency of the determination of L in Figure 6 ”, but in the conventional processing In the method, the ridge of L may be displayed as a positive ridge (the wall surface of the hole bulges outward). However, according to the method of the present invention, even if the ridge of L is the largest, Only 0, so there is no case where the wall surface of the hole swells outward. (Embodiment 2 > Because the substrate has various structures, there may be a gap between the back of the substrate and the processing table, and because of the gap like this The existence of perforations and the removal of carbides and other substances generated by laser processing on the surface of the substrate penetrate the back of the substrate and adhere firmly, forming a state that prevents plating. As shown in Figure 8, the existence of perforations TH For other reasons, in the substrate IS where a gap (not shown) is created between the back of the substrate IS and the processing table (not shown), other processing is performed (although the hole in the figure is a blind hole BVH, but it is perforated) The same applies to TH processing.) The foreign matter 7 that is removed during the removal of substances, etc., is attached to the back of the substrate IS by perforating TH or other gaps. In order to prevent this, it is traditionally shown in circle 8 in advance On top of the copper foil 2 on the back of the substrate IS, a protective film 8 such as a film or film is formed to prevent the adhesion of foreign objects 7. However, this method requires a process of sticking the film 8 and must be performed before the next process. Since the cymbal 8 is peeled off, the number of process operations increases and the efficiency is not good. According to the method of the present invention, as shown in the left half of FIG. 9, the surface of the substrate IS is first irradiated with the laser beam 1 for processing. At this time, as shown in the figure, the foreign matter 7 from which matter has been removed is attached to the through-hole TH by attaching ---------------------. Φ * · (Please Read the note f on the back before filling in this page) The paper size is the state standard of China (CNS) Λ4 specification (21 × X 297 mm) 8 39820 Printed by the Bayer Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^ A7 B7 _ 5. Description of the invention (9) On the copper foil 2 on the back side "Next, as shown in the right half of Fig. 9, the substrate IS to which the foreign matter 7 is attached is inverted to scoop out the back side, and the laser beam is irradiated again. 1 to remove the attached matter 7 · In order to confirm the effect achieved by the present invention, the substrate processed by the two-sided irradiation method of the present invention shown in FIG. 9 and the method using the protective film 8 shown in FIG. 8 are processed And the amount of foreign matter 7 adhered to each substrate after being processed, such as a substrate which is normally processed on the unprotected film 8 side, and the like. Zha, which results are shown in FIG. L〇a, the material used in the test are shown in FIG. 10b. In order to check the amount of adhesion, as shown in FIG. 10b, a substrate 3 (resin is polyimide, thickness 50 # m) with a copper foil 2 of 20 mm < 5 mm bonded to a single side is from the resin side. The processing of 10mm × 10mm is performed within the range shown by the square 9. In order to easily show the effect of the foreign material 7 of the resin material invading, the substrate IS is not closely attached to the processing planting table (not shown), and It is fixed at a position of 10mm on the hibiscus table. The amount of the attachment 7 is based on the area of the attachment 7 occupying the niche. It can be seen from Fig. 10a that after the surface processing, the back surface is subjected to laser irradiation treatment, that is, the adhesion amount is significantly reduced. In addition, the measurement of the amount of adhesion is measured on the substrate to which the protective film 8 is attached after the protective film 8 is removed. (Embodiment 3) In addition, due to the characteristics of the laser, when a perforation process is performed from the military side of the substrate, perforation is performed. The inner wall surface is formed into an inclined shape, which is smaller than the aperture of the beam exit side. The beam entrance diameter is smaller. When the substrate is layered, the perforated inner wall surface becomes stepped and has continuous performance or adhesion to plating. Issues with adverse effects on sexuality "----- rI ------ Order -------- Ί (Please read the precautions on the back before filling out this page) This paper size applies Chinese national standards ( CNS > Λ4 specification (210X297 mm) 9 39820 M Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and printed by Jr Consumer Cooperative A7 B7 V. Description of the invention (10) According to the present invention, laser irradiation is performed from both sides of the substrate to form a perforated The surface pore diameter and the back pore diameter that can be perforated are approximately the same i. Figure 11 shows the case where only one surface is processed and the case where the substrate after the single surface processing is inverted and processed on both surfaces. The ratio of the surface aperture to the back aperture The curve of the result shows that the material being processed is FR-4 (thickness t = 200 # m >. The processing conditions are 4mj with an energy equivalent to 1 pulse balance, and the frequency is 40HZ. In the case of one side, the number of shots is 10, and in the case of two sides, the number of shots is 5 from each side. The curve in Figure 11 clearly shows that in the irradiation process from a single side, the surface aperture is At about 120 / zm, the back hole diameter is about 60i / m, and the back hole diameter is about 50% of the surface hole diameter. In the case of irradiation processing from both sides, the surface hole diameter is about 100 # m, and the back hole diameter is about 100 # m. It is also the shape of about 100 / zm, and the back hole diameter is approximately the same as the surface hole diameter (about 100%). (Embodiment 4) In Embodiments 2 and 3, in order to explain that two substrates IS can be irradiated with lightning. The beam 1 is used to invert the substrate, but it is also possible to irradiate the laser beam 1 from both sides of the substrate IS at the same time or with a time difference. Compared with the case of inverting the substrate IS, this method is considered. Can be large: shorten the time greatly · For example, the hole TH shown in Yin Shi Pattern 3 In processing, when processing 10,000 holes, it takes 2.0ms to determine the position of the hole with a current scanner (gaWanoscanver), so the time required to determine the position of 10,000 holes is (10,000- 1 > χ 2.0 / 1000 = 19.998 seconds • And ZI Jun faced the holes ----- ^ -------- IT ----- (Please read the precautions on the back before filling this page) This paper scale is applicable to China National Standard (CNS) Λ4 specification (2Ϊ0 × 297 mm) 10 39820 After the Ministry of Standards and Technology of the People ’s Republic of China ’s Ministry of Standards and Industry #Cooperative Press ^ A7 B7 V. Description of the invention (11) The hole is fired 10 times at 40HZ , You have to (10-l) / 40 × 10, 00 ++ 19. 998 = 2269.998 seconds-this is a method of reversing the substrate is, does not calculate the minimum processing time necessary for reversal life · In fact, it is necessary to have a longer time. * On the other hand, in the case of simultaneous processing on both sides, in the state where the reversal time is not required, as long as the irradiation on the side of the thorium is required for 5 times of emission, Yes, so it is 2269.98 / 2 = 1134.998 seconds, which is the time required for processing. It can be completed in half. (Yin Shi Form 5) For the workpiece Direct irradiation of the laser processing target surface, depending on the time conditions, the surface shape of the holes may be deformed. For example, a common laser is used to perform a hole punching process on a printed circuit board. In the case of a carbon dioxide gas laser, in order to reduce the processing time, a galvano scanner is often used in order to shorten the processing time. This device is operated at high speed, so it is easy to generate vibration. As shown in Fig. 12, even a slight vibration is used to form a hole in the substrate. The reason for the deviation of the beam position between the first shot shown in the left half and the second shot shown in the right half is caused by the deformation of the shape of the processing hole on the surface. The deviation between the hole made in the first shot and the hole made in the second shot • When the surface processing hole is deformed, the stress after plating is concentrated in a certain part, and the part may break. Fig. 13 shows the processing method of the present invention. That is, on the surface of the processing substrate 3, a thin film 12 such as a polyethylene film capable of absorbing laser energy is affixed. The laser beam 1 is irradiated to perform the drilling process. This is done in a state where the resin film 12 is stuck on the surface ----- 1--Ί.ί {^ ------ Order ----- I line ι · ~ (Please read the Note: Please fill in this page before filling in this page.) This paper size applies to China National Standards (CNS > A4 size (210X29 * 7mm) 11 39820 Central Standards of the Ministry of Economic Affairs, Lianyungang, Consumer Cooperatives, Purple A7 B7, V. Description of the invention (12 ) During processing, that is, as shown in the left half and right half of FIG. 13, the influence of the positional deviation due to vibration and the like is only the thin film 12. Actually, it affects the insulating layer 3 of the substrate. The processing of holes does not cause a problem. In this way, when the hole processing is performed on the substrate without the thin film 12 and the substrate with the thin film 12, the result of the measured roundness of the surface roundness varies, as shown in FIG. The curve in Fig. 14. The material to be processed is epoxy resin (thickness of 150μ «0, for hole processing of φ100μιη). The processing conditions are 1 pulse and the military position of the energy is 2mj, the frequency is 10 为 Z for 2 shots. 》 The true roundness is the short diameter / long diameter X 100, and the measurement is performed on the substrate without film after processing and The substrate with the film was measured at 25 holes each after the film was torn off. It is apparent from FIG. 14 that the roundness of the hole of the substrate with the film 12 is high and the deviation is small. In addition, if As shown in Embodiment 3, when the laser beam 1 is used to perform hole processing from the military side of the substrate IS, the inner wall surface of the hole is inclined, and the diameter of the inclined front end portion is reduced. Therefore, with this processing phenomenon, In the two cases where the hole diameter becomes smaller and the true roundness of the hole of the substrate IS with the thin film 12 is high, the processing of fine holes with high true roundness can be achieved. The curve drawn in Figure 15 shows the thin film 12 The relationship between the thickness and the pore diameter on the substrate IS surface * The material to be processed is epoxy resin with a thickness of 30 # π for the substrate 12 · Processing conditions are 1 pulse unit energy is lmj · frequency 10ΗZ, and the pore diameter on the surface of the film 12 is made as P80 # In addition, the number of shots is varied in accordance with the thickness of the thin film 12 in order to achieve processing up to the inner foil. In other words, as the curve shows, the thicker the thin film 12, the smaller the aperture on the substrate surface. Tendency ** (Jing first read Note on the back page, please fill in this page again), 1T The paper size is the Chinese National Standard (CNS) Λ4 specification (210X 297 mm) 12 39820 A7 B7 V. Description of the invention (13) The use of the industry may The laser processing method is a laser processing method in which a hole is processed by a laser beam on a substrate provided with an insulating layer and a layer provided with ¥ layers in the insulating layer. The copper layer at the position of the hole on the substrate is selectively removed by etching, and an etching hole having a larger diameter than the hole opened in the insulating layer is formed on the copper layer, and the insulating layer is pulled out. Then, the hole is etched from the hole, and a laser beam corresponding to the diameter of the copper of the insulating screen which is to be opened is irradiated to perform the laser processing method of opening on the insulating layer. It is equivalent to the case of laser processing an insulating substrate, and the peel strength of the pattern is equivalent to that of a copper-clad substrate. In addition, the present invention is to process a processed object by irradiating a laser beam to the processed object. Processing method Among them, the laser processing method has the characteristics of irradiating a laser beam at the positions where the two sides of the processed object face the hole to be processed. Therefore, it is possible to suppress the occurrence of inclination during perforation processing, and it is possible to perform hole processing close to a straight line. Printed by the Central Consumers Association of the Ministry of Economic Affairs and Consumer Cooperatives (please read the precautions on the back before filling out this page). In addition, the present invention is a process for removing the material of the processed object by irradiating the processed object with a laser beam. Among the methods, a laser processing method having a feature of irradiating a laser beam at a position corresponding to a removal processing position on both sides of the processing object, and removing a foreign object generated by the processing from the processing object. . According to this method, the incidence of defects in subsequent processes can be suppressed. Furthermore, the present invention relates to a method for processing a material to be irradiated with a laser beam to remove the material to be processed. The positions corresponding to the processing positions on both sides are removed, and the paper size is irradiated at the same time or staggered. The Chinese paper standard (CNS) A4 (210X297 mm) is applicable. 13 39820 A7 B7 V. Description of the invention (14) Features of laser beam Laser processing method. In this way, since it is processed from the front and back of the workpiece at the same time or with a slight time difference, high-quality and short processing time can be performed ** Moreover, the present invention is aimed at processing In the processing method of irradiating a laser beam with a material to remove a material to be processed, a peelable film is adhered to a position corresponding to the processing position for removing the processed object through a subsequent process operation. A laser processing method characterized in that a layer or a plate is irradiated with a laser beam to a removal processing position and then a thin film layer is removed, and then the material of the workpiece is removed and processed. In this way, since the processing is performed with a thin film on the surface of the object to be processed, variations in the shape of the holes on the surface of the object to be processed can be suppressed, and fine holes can be formed in the substrate-(Please read the back first (Please fill in this page again)
L 經濟部中央標準局员工消贽合作社印裝 本紙張尺度朗巾家料（CNS )从祕（21()>;297公着） 14 39820L Printed by the staff of the Central Standards Bureau of the Ministry of Economic Affairs, printed by the cooperative. The paper size of the household towels (CNS) is from the secret (21 () >; 297) 14 39820