五、發明説明（ 經濟部中央標準局員工消費合作社印製 本發明係關於一種鈣鈦瘺鈿故人_ 。更特定言之，本發強電㈣之新穎合成方法 電陶资㈣2Ta2〇”、：Bi—⑽相強介 (Sr Ba τ ^ Β 2Ta2〇9及二者之固溶體 x , ^) 2Ta2〇9(x=0至1)之方法。並人成方法#梭杆 二階段式反應—先杆將备办，h 成万法係抓仃 BiTao 先仃將虱化鉍與氧化鈕反應後，得到 製碳酸喊碳酸絲合進練燒反應，從而可 強介電喊_。經由本發明方法，可有效增加 =遗度，並製得次齡級陶聽體，有利於粉體進行燒 先前技術 j介電_具有特殊介電特性、I電特性、焦電特性及 喊光學轉’已减應用於各a子元件^近年來由 於半導體項急速發展，對記髓t求亦急遽昇高，強介 電陶瓷於記憶體之運用亦廣泛被重視。 強介電陶歸有~好極，则自發純與電場之停滯 現象（P-E hystexsis)，在製備成薄膜後，可做爲非揮發性 隨機讀取記憶體（N〇nv〇latile Rand()m Aeeess MemQfy， NvRAM);另外利用其高介電係數，可做爲動態随機讀取 記憶 8s_(r^ynamic Random Ac,cess Mepiory，DRAM)。 動態隨機讀取記憶體(DRAM)一個記憶元件中含一個M〇s Transistor及一個電容（1T1C結構），因對記憶體 容量之需求不斷劇增，超高集積度之Gbit級產品世代即將 來臨下，目芎採用Si〇2或ShlSU之薄膜化或立體結構構裝 4- 良紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先M讀背面之注意事項再填寫本頁) 裝. 1T- A7 B7 五、發明説明（2 ) 之方法，都無法滿足未來半導體業之需求。唯有採用具高 介電係之鐵電陶瓷薄膜，以提高電容量，並避免複雜化之 記億體結構設計。另外目前可隨機存取之非揮發性記憶體 以EEPROM爲主，以目前設計而言，讀寫功能所需工作 電壓較高，另外運作速度慢，且電子穿隧效應亦會造成介 電質破壞、影響其使用壽命。如由記憶體設計上改變上述 缺點相當不易，目前趨勢乃以強介電薄膜製成之記憶體， 取代原有設計。其構造類似DRAM，只是將傳統順電性薄 膜改爲強介電性薄膜，利用自發分極可受電場改變而扭轉 之特性，製作成單一工作電壓操作之隨機讀寫之非揮發性 i己憶體。 目前可運用於非揮發性随機讀取記憶體之強介電陶材料 可分爲二類：（1)锆鈦酸鉛Pb(Zr，Ti)〇3(簡稱PZT)及（2) .'銀’鋇級麵..氧…化-物乂SrxBa_v-_x)Bi2Td2.Q9(x=:〇 至 '、1)(簡稱 SBBT)。該二類陶瓷均爲重要材料。前者研究時間較早， 製輕技:術發展成熟。後者因具有優良抗疲勞性（反覆讀寫後 ! ' - ί ，仍可保持其分極之極化率）、漏電流小、及雜訊比‘之特 性，进年亦被廣泛受到重視。 經濟部中央標準局負工消費合作社印製 (請先閲讀背面之注意事項再填寫名頁) 一般製備陶瓷薄膜可分爲（l)CVD(化學氣相蒸著法）及 (2)PVD(物理氣相蒸著法）。後者包含一般濺鍍法、射頻 (radio frequency)賤鍍法、雷射激鍍法。以PVD法鍍膜 製程中，先需製備陶瓷粉體，成形燒結後，製備成靶材。 粉體之特性直接影響'靶材密度，其晶相純度亦影響鍍膜品 質，進一步影響記憶體元件之性能。因此粉體製備極微重 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7五、發明説明（3 ) 經濟部中央標準局員工消費合作社印製 要。一般傳統製備SBBT陶瓷粉體時，係將氧化鉍、氧化 钽、碳酸鳃及碳釀鋇各粉體混合，再施於高溫反應數小時 。如無法製備單相，則進行反覆研磨及高溫煆燒，需繁複 之製程處理。因其反應性差，反應速率慢；又因反應不完 全，無法製備單相。如再施以反覆研磨及高溫烺燒，促成 粉鳢晶粒急速成長，減少粉體表面積，造成其粉體不易燒 結之瓦1—，並且不利後續靶材製備程序。 _爲了解決上述粉體製備之問題，本發明係進行一系列研 究，提供二種迅速反應方法，可合成單相SrBi2Ta2〇9(簡 稱 SBT) 、 BaBhTa209(簡稱 BBT)及（SrxBai-x)Bi2Ta2O9(x = 0至1)(簡稱SBBT)(上述二者之固溶體）陶 瓷粉體。再者，本發明亦可提供次微米級SBT、BBT及 I .丨 1 SBBT電陶瓷粉體。 發明概述 本發明之目的係在於提供一種快速合成方法，合成單相 ·. ' 強介電陶瓷SBT、BBT友SBBT粉體。 爲達成上述目的，本發明提供一種合成純相（Srxiai. x)Bi2Ta2O9(x=0呈i)強介電陶瓷之方法，其特徵在於包 括下列二步驟： (1) 混合氧化鉍與氧化钽，並進行煆燒反應，以合成 BiTa04，其反應溫度在600 °C至1100 °C之間，較 佳爲700 °C至95OX：之間；及 (2) 將所合成之BiTa〇4與化學計量（stoichiometric)的 碳酸鳃及碳酸鋇混合，再進行煆燒反應，其反應溫 -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (请先閱讀背面之注意事項善填寫本買)V. Description of the invention (Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. This invention is about a perforated titanium fistula. _. More specifically, the novel synthetic method of this invention's strong electricity: electric ceramic materials 2Ta2 0 ",: Bi- ⑽ 相 强 介 (Sr Ba τ ^ Β 2Ta2009 and the solid solution x, ^) 2Ta2009 (x = 0 to 1). And the human-made method # Shuttle two-stage reaction-first The pole will be prepared, and the system will be seized by BiTao. First, after reacting the bismuth lice with the oxidation button, the carbonic acid and carbonic acid filaments will be mixed into the firing reaction, so that the dielectric can be strongly dielectricized. By the method of the present invention, Effective increase = loss, and the production of second-grade pottery auditory body, which is conducive to the burning of the powder. The prior art. Dielectric _ has special dielectric characteristics, I electrical characteristics, pyroelectric characteristics, and the optical conversion has been reduced. a Sub-element ^ In recent years, due to the rapid development of semiconductor items, the demand for memory t has also increased sharply, and the use of strong dielectric ceramics in memory has also been widely valued. Strong dielectric ceramics are owned by ~ excellent, then spontaneously pure and Electric field stagnation (PE hystexsis) can be used as non-volatile after being prepared into a thin film Machine Read Memory (N〇nv〇latile Rand () m Aeeess MemQfy, NvRAM); In addition, its high dielectric coefficient can be used as dynamic random read memory 8s_ (r ^ ynamic Random Ac, cess Mepiory, DRAM ). Dynamic random access memory (DRAM) A memory element contains a Mos Transistor and a capacitor (1T1C structure). Due to the increasing demand for memory capacity, the generation of ultra-integrated Gbit-level products is coming soon. Coming soon, the project uses Si02 or ShlSU to form a thin film or three-dimensional structure. 4- Good paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling in this Page). 1T- A7 B7 5. The method of invention description (2) will not meet the needs of the future semiconductor industry. Only ferroelectric ceramic films with high dielectric system can be used to increase the capacitance and avoid complications. The design of the billion-body structure. In addition, the currently non-volatile memory that can be randomly accessed is mainly EEPROM. According to the current design, the working voltage required for reading and writing is higher, the operation speed is slow, and the electron tunneling effect Will also cause The electrical quality is damaged, which affects its service life. It is not easy to change the above disadvantages in the design of the memory. The current trend is to replace the original design with a memory made of a strong dielectric film. Its structure is similar to DRAM, but it is a conventional paraelectric The non-volatile film is changed to a ferroelectric film, and the spontaneous polarization can be reversed by the change of the electric field to make a non-volatile memory that can be read and written randomly at a single operating voltage. The strong dielectric ceramic materials for reading memory can be divided into two categories: (1) lead zirconate titanate Pb (Zr, Ti) 〇3 (referred to as PZT) and (2). 'Silver' barium grade surface .. oxygen ... (SrxBa_v-_x) Bi2Td2.Q9 (x =: 0 to ', 1) (referred to as SBBT). Both types of ceramics are important materials. The former has been researched earlier, and the technology of light-weight technology has matured. The latter is widely valued for its excellent anti-fatigue properties (it can still maintain its polarization polarization after repeated reading and writing!), Low leakage current, and noise-to-noise ratio. Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperatives (please read the precautions on the back before filling in the name page) Generally prepared ceramic films can be divided into (l) CVD (chemical vapor deposition) and (2) PVD (physical Vapor phase evaporation method). The latter includes a general sputtering method, a radio frequency (radio frequency) base plating method, and a laser laser plating method. In the PVD coating process, a ceramic powder needs to be prepared first, and then formed into a target after forming and sintering. The characteristics of the powder directly affect the target density, and its crystal phase purity also affects the coating quality, further affecting the performance of the memory device. Therefore, the powder preparation is extremely light. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Description of the invention (3) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Generally, the traditional preparation of SBBT ceramic powders is to mix bismuth oxide, tantalum oxide, gill carbonate and carbonized barium powder, and then apply the reaction at high temperature for several hours. If single phase cannot be prepared, repeated grinding and high-temperature sintering are required, which requires complicated processing. Because of its poor reactivity, the reaction rate is slow; and because of the incomplete reaction, a single phase cannot be prepared. Repeated grinding and high-temperature sintering are used to promote the rapid growth of powder grains, reduce the surface area of the powder, make the powder difficult to sinter, and adversely affect the subsequent target preparation process. _ In order to solve the above problems in powder preparation, the present invention conducts a series of studies and provides two rapid reaction methods, which can synthesize single-phase SrBi2Ta2O9 (SBT for short), BaBhTa209 (BBT) and (SrxBai-x) Bi2Ta2O9 ( x = 0 to 1) (abbreviated SBBT) (solid solution of the above two) ceramic powder. Furthermore, the present invention can also provide sub-micron SBT, BBT, and I. 丨 1 SBBT electric ceramic powder. SUMMARY OF THE INVENTION The object of the present invention is to provide a rapid synthesis method for synthesizing single-phase ·. 'Strong dielectric ceramic SBT, BBT and SBBT powder. To achieve the above object, the present invention provides a method for synthesizing pure phase (Srxiai. X) Bi2Ta2O9 (x = 0 is i) strong dielectric ceramic, which is characterized by including the following two steps: (1) mixing bismuth oxide and tantalum oxide, A calcination reaction is performed to synthesize BiTa04, the reaction temperature is between 600 ° C and 1100 ° C, preferably between 700 ° C and 95OX :; and (2) the synthesized BiTa04 is stoichiometric (Stoichiometric) is mixed with gill carbonate and barium carbonate, and then the reaction is performed. The reaction temperature is -6- This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back first and fill in well. (This buy)
經濟部中央標準局員工消費合作杜印製 度在600 C至i200 »C之間，較佳爲7〇 °C之間。 策施態樣中’上述X値爲1。即，在步驟 彳用碳酸鳃進行嘏燒反應，即可得到純相 i>rBi2Ta209強介電陶资。 上本：明之另實施態樣中’上述：値爲0。即，在步驟 (2)中僅使甩碳酸顧推j 盘 敗蜎進行煆燒反應，即可得到純相The consumer cooperation agreement between the Central Bureau of Standards of the Ministry of Economic Affairs and the consumer printing system is between 600 C and i200 »C, preferably between 70 ° C. In the policy aspect, 'said X' is 1. That is, in step 嘏, the sintering reaction is performed with gill carbonate to obtain a pure phase i > rBi2Ta209 strong dielectric ceramic material. In the above text: In another embodiment of the Ming, ‘above: 値 is 0. That is, in step (2), the pure phase can be obtained only by removing the carbonic acid and pushing the j disk and performing the sintering reaction.
BaBi_‘2Ta2〇9強介電陶瓷。 本發明（万法所製得粉體之顯微結構均勻，且晶粒大小 於次微米級。 、圖式的簡單説明BaBi_‘2Ta2 09 strong dielectric ceramic. According to the present invention, the microstructure of the powder produced by Wanfa is uniform, and the grain size is sub-micron level.
I 圖1係實例1中氧化_氧化叙K90(KC假燒2小時後 ’再與碳㈣反應所得之加純相之X射賴射圖。 圖2係實勢!中'轉之浙純相乏掃描式❹顯微鏡圖 〇 「圖3 :係實例2 :中丨氧化鉍與氧化钽於900 X：煆燒2小時後 ’再於碳酸鎖反應所得之謝純相之X射線燒= 圖4係實例！中所得之BBT純相之掃描式電子顯微鏡圖 〇 圖5係實例3中氧化纽與氧化组於9〇〇假燒2小時後 ，再於碳酸锶及碳酸鋇反應所得之（Sr。5Ba。5)Bi2Ta2〇9 純相之X射線燒射圖。 圖6係實例3中所得之（Sr〇.5Ba〇 5)Bi2Ta2〇9純相之掃 描式電子顯微鏡圖。 -7 奉紙張尺度適用中國國家標準（CNS ) Μ規格（2丨0X297公釐） (请先閲讀背面之注意事項再填寫本頁) * —^ϋ ^Ν= — mi - — : 1-1 A7 B7五、發明説明（5 ) 經濟部中央標準局員工消費合作社印製 發明之詳細説明 本發明中新穎合成強介電陶瓷SBT、BBT及SBB^T粉 體之方法之特徵在於採二階段式反應。即，第一階段先將 氧化鉍與氧化钽混合反應合成BiTa04化合物後，再於第 二階段與碳酸鳃或碳酸鋇反應。 先前技術係將氧化鉍、氧化钽、碳酸鏢、碳酸鋇直接混 合而共同反應。但氧化钽易與碳酸鋇及碳酸勰反應，而形 成大量中間產物，該中間產物化學安定性高，另一方面又 不易#氧化鉍反應，所以一旦中間產物形成後，其後續反 應停滯，而造成反應速率低，反應不完全之問題。 爲避免傳統反應中會產生大量中間產物之問題，本發明 基本構想在於將氧化钽與氧化鈕先行反應成BiTa04，因 該仡合物中之钽原子己穩宋存在BiTa<)4蟲格中，直接避 免is原手輿總原子或鋇原子進杆反應產生申間相之問.題。 ·. / ' 因已減少中間相形成機會，可減少不必要乏反應步驟，故 可促進反應速率提高。另一方面因先鏗遜第一階段反應後 ，第二階段須混合之物種數減少，寸有效提高混合效率， 增加反應物之間擴散犮反應速率。 詳言之，本發明乏合成方法係於第一階段反應中，將氧 化鉍及氧化鉅混合進行煆燒反應，其煆燒溫度爲000 °C至 1100 °C之間，較佳爲700 °C至950 °C間。反應後製備得 BiTa04粉體。第二階段再將高活性之BiTa04粉體輿碳酸 鳃混合，於600 °C至1200 °C之間進行煆燒反應，較佳爲 700 °C至1100 °C之間，可迅速合成SBT單相粉體。如於 (請先閲讀背面之注意事項再填寫本1) -裝— ,11 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7五、發明説明（6 ) 經濟部中央標準局員工消費合作社印製 第二階段將BiTa04粉體與碳酸鋇混合，其反應條件同 SBT，則可迅速反應製得BBT单相粉體。如於第二階段將 BiTa04粉體同時與碳酸鳃及碳酸鋇混合，反應條件同 SBT，亦可迅速製備得SBBT單相粉體。因本發明方法之 反應速率快，不須提高反應溫度，亦不須延長反應時間以 提高反應物之轉化率。在低嘏燒溫度且快速反應條件下， 可控制所獲粉體不因過度煆燒而急底劇成長，故可製備得 SBT、BBT及SBBT次微米級之粉體，有利於粉體燒結 ，可運用於強介電陶瓷元件上。 茲以下列實例進一步説明本發明，唯单不意味本發明僅 侷限於砵等實施例所揭示之内容。 實例1 先將氧化鉍與氧化钽依莫耳比1 : 1之比例球磨混合， 將混合物乾燥後，於900 °C煆燒2小時，得到BiTa〇4純 湘粉體。再將BiTa04與碳酸鳃依莫耳比2 : 1之比例球 磨混合，其混合粉體乾燥後，加至900 °C卑即冷卻，進行 X線燒射分析，其結果圖示於圖1中。 如圖1所示，所得粉體爲SBT之純相，具有層狀鈣鈦礦 相之結構。本實施例證明利用先驅物BiTa04與碳酸鋇反 應，僅須加熱至900 °C，在不須於900 °C持溫處理之條件 下，即可迅速反應製得SBT純相。其粉體之電子顯微鏡照 片示於圖2。如圖2所示，所得粉體顯微結構均勻，且粒 徑爲次微米級。 實例2 (#先閲讀背面之注意事項再4寫本育) " _ 9 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 五、發明説明（7 A7 B7 依實例1步驟得到BiTa04粉體後，使Βίΐα〇4與碳酸鋇 依莫耳比2 : 1之比例球磨混合，其乾燥粉體於加熱至 900 C後急冷，進行X線繞射分析，其結果圖示於圖3中 經濟部中央標準局員工消費合作社印製 如圖3所示，所得粉體爲ΒΒΤ之純相，具有層狀鈣鈦礦 相結構。其粉體之電子顯微鏡照片示於圖4，如圖4所示 ’所得粉體爲次微米級，且粒徑分布均勻。本實施例證明 本發明利用先驅物BiTa04與碳酸鋇反應，僅須加熱至 900 °C即可迅速反應製得BBT純相，且製得次微米粒徑之 粉體。再將該粉體壓片成形，於100(TC燒結2小時，所得 密度爲8.43 g / cm3 ,爲理論密度之94 3 0/。，證明該粉 體具有馬燒結性。 比較實例 採用傳統製繪製備實'例2中之BBT粉體。將嘴酸鎖、氧 化叙、氧化短依化學計量球磨混合棱，將混合粉镇施以乾 燥。同樣將乾燥粉體加熱至900 eC急冷，，以X線繞射分析 後’卻發現並無法形成BBT之純相，試樣中有大量雜相產 生，包括氧化银及Ba.gThO!5 β與貪例i比較，可發現採· 取本發明乏兩階段式反應確實可増加反應速率，並於低反 應溫度及Μ時間反應條件下製備得單相粉體。 實例3依實例1步驟得到BiTa〇4粉體後，使BiTa04與碳酸總 及碳酸鋇依莫耳比4 : 1 : 1之比例球磨混合，其乾燥粉體加熱至900。(：後急冷，其粉體之X線繞射圖譜示於圖5 -10- 本紙張尺度適用中國國家檁维f ΓΝΟ Λ44ΙΙ故mnvicn八枝I Figure 1 is an X-ray ray map of the pure phase obtained by reacting with carbon thorium after 2 hours of KC (KC false firing in Example 1). Figure 2 is the real phase of the transformation in Zhejiang! Scanning microscope image: "Figure 3: Example 2: Medium bismuth oxide and tantalum oxide at 900 X: sintered for 2 hours, and then X-ray burning of Xie Chun phase obtained by the carbonic acid lock reaction = Figure 4 is an example! Scanning electron micrograph of the pure phase of BBT obtained in Figure 0. Figure 5 is a sample (Sr. 5Ba. 5) obtained by reacting oxidized button and oxidized group in Example 3 for 2 hours at 900, and then reacted with strontium carbonate and barium carbonate. ) X-ray pyrogram of the pure phase of Bi2Ta2009. Figure 6 is a scanning electron microscope image of the (Sr0.5Ba0 05) Bi2Ta2009 pure phase obtained in Example 3. -7 The paper standard applies to Chinese national standards (CNS) M specifications (2 丨 0X297 mm) (Please read the precautions on the back before filling out this page) * — ^ ϋ ^ Ν = — mi-—: 1-1 A7 B7 V. Invention Description (5) Economy Detailed description of the invention printed by the Ministry of Standards and Staff ’s Consumer Cooperatives. Features of the novel synthetic ferroelectric ceramic SBT, BBT and SBB ^ T powders in the present invention The two-stage reaction is adopted. That is, in the first stage, bismuth oxide and tantalum oxide are mixed to synthesize BiTa04 compounds, and then in the second stage, they are reacted with gill carbonate or barium carbonate. The previous technology used bismuth oxide, tantalum oxide, and carbonic acid. Dart and barium carbonate are directly mixed and react together. However, tantalum oxide easily reacts with barium carbonate and rhenium carbonate to form a large number of intermediate products. The intermediate products have high chemical stability and are not easy to react with #bismuth oxide, so once the intermediate products After the formation, the subsequent reactions stagnate, resulting in the problem of low reaction rate and incomplete reaction. In order to avoid the problem that a large number of intermediate products will be generated in the traditional reaction, the basic idea of the present invention is to first react tantalum oxide and oxidation button to BiTa04, because The tantalum atom in the adduct has been stable in the BiTa <) 4 worm lattice, which directly avoids the problem of the interphase between the isomers of the original hands or the barium atoms. · / / Because it has been reduced Opportunities for the formation of mesophases can reduce unnecessary and exhaustive reaction steps, so it can promote the increase of the reaction rate. On the other hand, after the first-stage reaction, the second-stage reaction The number of species that need to be mixed is reduced, which effectively improves the mixing efficiency and increases the reaction rate of the diffusive plutonium between the reactants. In particular, the lack of synthesis method of the present invention involves mixing bismuth oxide and oxidized giant in the first stage of the reaction for sintering. In the reaction, the calcination temperature is between 000 ° C and 1100 ° C, preferably between 700 ° C and 950 ° C. BiTa04 powder is prepared after the reaction. In the second stage, the highly active BiTa04 powder is carbonated. The gills are mixed, and the simmering reaction is performed between 600 ° C and 1200 ° C, preferably between 700 ° C and 1100 ° C, and SBT single-phase powder can be quickly synthesized. For example, (please read the notes on the back before filling in this 1) -Package-, 11 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Description of invention (6) Central standard of Ministry of Economic Affairs In the second phase of printing by the Bureau ’s consumer cooperative, BiTa04 powder was mixed with barium carbonate, and the reaction conditions were the same as those of SBT, and the BBT single-phase powder could be quickly reacted. If BiTa04 powder is mixed with gill carbonate and barium carbonate at the same time in the second stage, the reaction conditions are the same as SBT, and SBBT single-phase powder can also be prepared quickly. Because the method of the present invention has a fast reaction rate, it is not necessary to increase the reaction temperature, nor to extend the reaction time to increase the conversion rate of the reactants. Under low sintering temperature and fast reaction conditions, the powder obtained can be controlled not to grow rapidly due to excessive sintering, so SBT, BBT and SBBT submicron-level powders can be prepared, which is conducive to powder sintering. Can be used on ferroelectric ceramic components. The following examples further illustrate the present invention, but it does not mean that the present invention is limited to the content disclosed in the embodiments. Example 1 First, bismuth oxide was mixed with tantalum oxide by a molar ratio of 1: 1, and the mixture was dried and then calcined at 900 ° C for 2 hours to obtain BiTa04 pure Xiang powder. Then, BiTa04 was mixed with a carbonate gill carbonate with a molar ratio of 2: 1, and the mixed powder was dried, then cooled to 900 ° C, and then subjected to X-ray burning analysis. The results are shown in FIG. 1. As shown in Fig. 1, the obtained powder is a pure phase of SBT and has a layered perovskite phase structure. This example demonstrates that using the precursor BiTa04 to react with barium carbonate, it only needs to be heated to 900 ° C, and can be quickly reacted to obtain pure SBT phase without the need of holding at 900 ° C. An electron microscope photograph of the powder is shown in FIG. 2. As shown in Fig. 2, the microstructure of the obtained powder was uniform, and the particle diameter was in the sub-micron order. Example 2 (#Read the precautions on the back and then write the textbook) " _ 9-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 5. The description of the invention (7 A7 B7 is obtained according to the steps of Example 1 After BiTa04 powder, Βίΐα〇4 was mixed with barium carbonate with a molar ratio of 2: 1. The dried powder was heated to 900 C and then quenched, and X-ray diffraction analysis was performed. The results are shown in Figure 3. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs as shown in Figure 3, the resulting powder is a pure phase of BT with a layered perovskite phase structure. The electron microscope photograph of the powder is shown in Figure 4, as shown in Figure 4 The 'obtained powder is submicron grade and has a uniform particle size distribution. This example demonstrates that the present invention uses the precursor BiTa04 to react with barium carbonate, and only needs to be heated to 900 ° C to quickly react to obtain a pure BBT phase, and A powder with a sub-micron particle size was obtained. The powder was then pressed into a tablet and sintered at 100 ° C for 2 hours to obtain a density of 8.43 g / cm3, which is 94 3 0 /. Of the theoretical density, which proves that the powder has Horse sinterability. Comparative example using traditional drawing prepared in Example 2 BBT powder. The mouth is acid-locked, oxidized, and oxidized by a stoichiometric ball milling mixed edge, and the mixed powder is dried. The dried powder is also heated to 900 eC, quenched, and analyzed by X-ray diffraction. It was found that the pure phase of BBT could not be formed, and a large number of heterogeneous phases were generated in the sample, including silver oxide and Ba.gThO! 5 β. Compared with the case i, it can be found that the two-phase reaction of the present invention can indeed add reaction. Rate, and a single-phase powder was prepared under low reaction temperature and M time reaction conditions. Example 3 After obtaining BiTa04 powder according to the procedure of Example 1, the ratio of BiTa04 to carbonic acid and barium carbonate was 4: 1: 1 ratio ball milling and mixing, the dry powder is heated to 900. (: After quenching, the X-ray diffraction pattern of the powder is shown in Figure 5 -10- This paper scale is applicable to the Chinese national dimension f ΓΝΟ Λ44ΙΙ therefore mnvicn eight branches
-7 -I (请先閲讀背面之注意事項再填寫本頁) ▼裝· ---訂--1 五 、發明説明（ A7 B7 中。 、如圖5所示，所得粉體爲（Sr〇 5Ba〇 5)Bi2Ta2〇〇 9之單相 屯，。其粉體之電子顯微鏡照片示於圖6。如圖6所示， 所得粉體具均句顯微結構，且爲次微米級。本實施例證明 本發明可迅速合成SBBT單相且爲次微米級之粉體。 麻明之方法與特徵，經上述實例説明將更爲明顯。理 ，任料獅本發明精㈣爲之修«改變， 白屬本發明意圖保護者。 (t先Η讀背面之注意事項鼻填寫本育) .裝- 經濟部中央標準局員工消費合作社印製 -11 - 本紙張尺度適用中國國家標準（CNS ) Α4规格（2丨〇><297公釐）-7 -I (Please read the precautions on the back before filling out this page) ▼ Installation · --- Order--1 V. Description of the invention (A7 B7.) As shown in Figure 5, the resulting powder is (Sr〇 5Ba〇5) Single phase of Bi2Ta2009. The electron micrograph of the powder is shown in Figure 6. As shown in Figure 6, the obtained powder has a uniform microstructure and is sub-micron level. This implementation The example shows that the present invention can quickly synthesize SBBT single-phase and sub-micron powder. The method and characteristics of Ma Ming will be more apparent through the above examples. Reason, the essence of the invention is to modify the «change, white It is intended to protect the present invention. (T read the precautions on the back and fill in this education first.) Equipment-Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs-11-This paper size applies to China National Standard (CNS) Α4 specifications ( 2 丨 〇 > < 297 mm)