TW381363B - Organic lasers - Google Patents
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經濟部中央標準局員工消費合作社印製 A7Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7
BT 五、發明説明（1 ) 發明領域 本發明涉及的是發光裝置，更明確地説，是關於包含有 機物質的雷射也爷赴裝置。 货景資訊 最近一些發表的文章報告出一些現象例如超級發冷光裝 置以及聚合有機發光體例如共軛聚合物中的放大自然性發 射光，（德斯勒（N. Tessler)—等人於1996年，，自然（Natur^ 期刊382,695發表的文章、海德（F Hide) 一一等人於1996年二 ll^lgcience)"期刊273，1833發表的文章，兩暑皆併入本文 的參考文獻）。這些發光體中利用的材料是由一個聚合體 溶液或其化學前身的旋轉塗佈岛成。光學泵激、有機雷射 染料的受激發射、無化學變化的應用、旋轉塗佈的聚合物 或凝膠在下列的文章中已經有説明：（荷姆斯（R E Hermes) 一等人於1993年1應用物理簡訊（Appl phvs T etn" 63>87” 中的報告、魏斯（Μ. N. Weiss)—等人於i 9 9 6年"應用物多玺 農直1_1 69,3653中的報告、科茲尼克（H. K〇geinik) —等人於 1971年物理簡訊” 18，152中的報告、卡凡（M_ Canva) 一等人於1995年二應用光學（Appl· Ont·)"]4 中的邾令·， 每一篇皆列入本文中的參考文獻）。 然而’與其它的電致發光物質比較起來，旋轉塗佈的聚 合物材料不涉.顯現出很好的厚度均勻性、得到材料高純度 的能力，、運作Φ今、以及和其它彳泰統漆導體製程整合的容 易程度。在利用於平面顯示器^的有機發光裝置（〇LEDs)領 域中，例如，小分子的OLEDs目前可提供比它們的旋轉塗 佈、類似聚合物幾倍的運作哥命，’（羅斯鸯（L· j. R〇thberg), , -·· -4- (锖先鬩讀背面之注意事項再填寫本頁) ¥BT V. Description of the Invention (1) Field of the Invention The present invention relates to a light-emitting device, and more specifically, to a laser device including an organic substance. Some recent articles published by Cargo Info reported phenomena such as super-luminescence devices and amplified natural light emission in polymeric organic light-emitting bodies such as conjugated polymers, (N. Tessler), et al., 1996 , Nature (article published in Natur ^ journal 382,695, article published by F Hide et al. (1996, ll ^ lgcience) " journal 273,1833, both references are incorporated in this article). The materials used in these luminaries are made of spin-coated islands of a polymer solution or its chemical precursor. Optical pumping, stimulated emission of organic laser dyes, applications without chemical changes, spin-coated polymers or gels have been described in the following articles: (RE Hermes et al. 1993 Year 1 Applied Physics Newsletter (Report in Appl phvs T etn " 63 > 87 ", Weiss (M.N. Weiss)-et al. I 9 9 6 " Application Material Duo Xi Nong Zhi 1_1 69,3653 Report by H. Kogeinik — Physics Newsletter by 1971, et al., 18,152, M. Canva, First Class by Appl. Ont, 1995 "] 4, each of which is included in the reference of this article). However, compared with other electroluminescent substances, spin-coated polymer materials are not involved. It shows very good Thickness uniformity, ability to obtain high purity of the material, ease of operation, integration with other Thai Thai paint conductor manufacturing processes. In the field of organic light emitting devices (〇LEDs) used in flat panel displays, for example, small Molecular OLEDs currently provide Several times operates brother lives, '(Ross mandarin duck (L · j R〇thberg),, - Note ·-4- (POH first Eris read the back of this page and then fill in) ¥
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五 發明説明（ A7 ΒΤ 經濟部中央標準局員工消费合作社印製 I 等人於 1996 年11 : 3 i74 的又章“有機電致發光的現狀與展望，，；格林漢匸 ^eenham)—等人於1995 年 、刊49 · 1中的文章二去輛聚合物的半導體物理膝作μ有 明，兩者皆併入本文的參考文獻)。 Ρ 最近，在小分子量有機本導體薄膜與做爲有機半導體雷 射(—OSLs )的聚,合體上/產生的雷射主動與受激發射已引起 大家的興趣。有機物質的低成本以及和其它光電裝置整合 成OSLs並長晶成爲類似及非磊晶薄膜的能力；使得它可以 應用在很多方面。有機半導體成爲〇SL的功能在光學與電 =万面的特質，對於溫度的敏感度比傳統非有機雷射二極 體更穩定。例如，最近已發表的小分子量有機半導體眞空 沉積薄膜形成的板狀波導結構内光學泵激產生的雷射主動 (例如寇茲洛夫（V.G. Kozlov) —等人於97年五月在馬里蘭 州之巴爾的摩，美國光學學會（〇pt· s〇c. Am.)舉行的雷射 與光電研討會CLEO，CPD-18中所發表的報告，併入本發 明的參考文獻）。這些有機半導體雷射（〇SLs)的輸出功 率、差分量子效率、以及發射波長在溫度改變時，比傳統 的非有機雷射二極鳟顯現出更穩定的狀態。有機雷射結構 結合有機半導體本踅上的優點例如低滷本、類似與非磊晶 生長（如：佛利斯特（S.R. F〇rrest) —等人於1 994年，1物理評 論（Phys. Rev.)11 B,49，1 1309中的説明，在此做爲本文的參 考文獻），以及容易與其它光電裝置整合在一起的好處， 對於未來的研定形成一股很強的推動力。目前，一個令人 感到興趣的0SI；結構發展是對於〇;SL的特，件需求例如很窄 本纸張尺度適用中國國家標準（CNS ) A4規格（210X：297公釐） (請先閱讀背面之注意事項再資寫本頁) J1 f — I— I n n I - II ^v'-衣·_I - .丁 、一so 五 發明説明（ A7 Br 經濟部中央標準局員工消费合作社印製 岣發射頻寬、可利用之最小量主動有機物皙、 長的簡化與電子泵激。 Ml!月概述 本發明説明-個雷射裝置，它包含因系激產生雷射主動 的有機材料，因此產生雷射光。此發明包含較佳實例特定 結構的光學與電子式泵激以及有機雷射物質。與旋韓塗你 t聚合材料比較起來，本發明使用的有機材料提供的 f艮舟的厚度均勻度、相當高的材料純度'、以及很容易輿 傳統的製程整合在-起。此外，本發明的雷翁裝置提供二 個明顯的轸出功率艮値、-明確的雷射光走、諧振腔模 態、以及狹窄的光譜線。 - 本發明包含_個雷射，它包含—個鏡面層以及在鏡面声 上面的一層主動有機物質。這個主動有機物質受泵激起雷 射王動而產生雷射光。鏡面層至少反射—部份由 有機物質產生的雷射光。 } 一方面，本發明涉及—種光學泵激雷射，它包含—個光 學果激能量來源以泵激主動有機物質。 另一方面，本發明涉及—種電子式泵激雷射，其中主動 2機物質是一個電致發光物質，且配置在—對電極之間。 當電流通過兩個電極之間時，主動有機物質因而受2泵 激0 垦_式簡要説明 , Ϊ · - 圖1説明的裝置是根據本發一明的一個雷射裝置佳 例。 氏貝 圖2説明的裝置是根據本發明.的一個f射裝置較佳實 及調整波 --Γ -------- -- {請先閲讀背面之注意事項再填荈本頁)Fifth invention description (printed by A7 ΒΤ printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, et al., 1996, 11: 3, i74, and chapter "Current Situation and Prospects of Organic Electroluminescence ,; Greenham 匸 eenham)-et al. In 1995, the article 2 of the journal 49 · 1 described the physical physics of semiconductors for polymers (the two are incorporated herein by reference). Recently, small-molecular-weight organic conductor films and organic semiconductors have been used. The convergence of laser (-OSLs), active / stimulated laser emission on / combined has attracted everyone's interest. The low cost of organic substances and integration with other optoelectronic devices into OSLs and growing into similar and non-epitaxial films The ability to make it can be applied in many ways. Organic semiconductors have become a feature of 〇SL in terms of optical and electrical properties, and their sensitivity to temperature is more stable than traditional non-organic laser diodes. For example, recently published Laser pumping generated by optical pumping in a slab waveguide structure formed by a thin molecular weight organic semiconductor hollow-deposited thin film (eg, VG Kozlov — et al., May 1997 in Mali (Reports published in CLEO, CPD-18, Laser and Optoelectronic Symposium held by the American Optics Society (〇pt · soc. Am.), Baltimore, Lanzhou, incorporated in the references of the present invention.) These organic semiconductor mines The output power, differential quantum efficiency, and emission wavelength of radiation (〇SLs) show a more stable state than traditional non-organic laser diode trout when the temperature is changed. The organic laser structure combines the advantages of organic semiconductors. For example, low halogen, similar and non-epitaxial growth (such as: SR Forrest) — et al., 1 994, 1 Phys. Rev. 11 B, 49, 1 1309 Note, here as a reference for this article), and the advantages of easy integration with other optoelectronic devices, forming a strong driving force for future research. At present, an interesting 0SI; structural development It is a special requirement for 〇; SL. For example, the paper size is very narrow. The Chinese paper standard (CNS) A4 (210X: 297 mm) is applicable. (Please read the precautions on the back before writing this page.) J1 f — I— I nn I-II ^ v'-clothing _I-. Ding, Yi So Five Inventions (A7 Br Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, printed emission bandwidth, the minimum amount of active organic matter available, long simplification and electronic pumping. Ml! Monthly Overview Description of the Invention-A laser device that contains laser-active organic materials that generate laser light as a result of laser excitation. This invention includes optical and electronic pumping and organic laser substances with specific structures in preferred embodiments. In comparison with coating polymer materials, the organic materials used in the present invention provide thickness uniformity, relatively high material purity, and easy integration with traditional manufacturing processes. In addition, the Leon device of the present invention provides two distinct extraction powers,-explicit laser light travel, resonant cavity mode, and narrow spectral lines. -The present invention contains lasers which contain a specular layer and a layer of active organic matter above the specular sound. This active organic substance is stimulated by the pump to generate laser light. The specular layer reflects at least-part of the laser light generated by organic matter. } In one aspect, the present invention relates to an optical pump laser, which includes a source of optical fruit laser energy to pump active organic matter. In another aspect, the present invention relates to an electronic pump laser, in which the active substance is an electroluminescent substance and is disposed between the counter electrodes. When an electric current is passed between two electrodes, the active organic substance is thus pumped by 2 pumps. Brief description, Ϊ ·-The device illustrated in Figure 1 is a good example of a laser device according to the present invention. The device illustrated in Figure 2 is according to the present invention. A f-radiation device is better implemented and adjusted. --Γ ---------(Please read the precautions on the back before filling this page)
•II β--------^--- -6 本紙張碰適财麵家 A7 Br 五、發明説明（4 例。 圖3是本發明中—倘妨4 量密度之間的圖示説明。’自’峰値輸出功率與泵激能 圖4 (圖3中的插圖）説明發 性，它是薄膜表面之正交平面^、:車又佳貫例的發射偏極 的函數。 千面與偏光鏡平面兩者之間角度 圖5A與5B説明的是太恭a , 佳實例。 "$ 一個電子泵激雷射裝置之較 面：説明一個根據本發明較佳實例的雷射*振腔結構截 截=明—個根據本發明較择實例的光學系激雷射裝置 圖8Α至8G説明的县η 疋DCM、鋁化三（8_羥基喹 琳）（Alq3)CBP、DCM2、若 右廿明-6G(rhodamine-6G)、香豆素 -47(C〇umarin-47)、以及perylene各別的化學式。 圖9説明一個根據未典日日+ ' 抑 毛月車父佳貫例的可調式光學泵激雷 射截面圖。 圖1 0説H自根據本發明較佳實例的電子泵激雷射截面 圖0 .圖11説明—個根據本發明較佳實例的Φ層式、多顏色電 子果激雷射截面圖。 圖1 2説@個根據本發明較佳實例的可調式電子系激雷 射截面圖。 圖13説明-個根據本發明較佳實例的波導縮小結構截面 圖。 . 本紙張尺度適用中國國家標準（ (請先閲讀背面之注意事項再填离本頁) 袈· 訂 經濟部中央標準局員工消费合作社印製 五、發明説明（5 ) A7 B7- 經濟部中央標準局負工消費合作社印製 圖14況明一個根據本發明較佳實例的光學泵激 發射光譜。 衣二圖1 5説明一個根姑太政很據本發明OVCSEL較佳實例之基板垂直方向内的自然發射光譜。_ 1 6説明個根據本發明〇vcSEL較佳實例中 發能階時的發射光譜。圖1 7説明一個根據本發明〇vcsel較佳實例中田射主動門P艮激感爲函數的高解析發射光譜。 拉圖1 8説明一個根據本發明〇vcsel較佳實钿中」爾过 夏依接近雷射王動門限値之輸-人泵激能量而定的關係。詳細説明 - 本發明-個光學泵激雷射裝置1〇〇的較佳實例顯示於圖工 中。此雷射裝置100包含一個第一鏡面〇機材料U2。第-鏡面層11〇是一面"鏡子"，它可;;反^ 少一部份從有機材料層112發射出來的光。例如，很多應 用於本發明録中的鏡面層是用來傳輸具有較適合特性的雷射光例如波長、方向、頻寬、亮度、以及其它類似的特 性，而反射的是不具適合特性的光線。本發明利用的鏡面層包含的，例如玻璃基板、石英 '藍寶石或塑膠、拋光的鱗化銦層、分佈的布拉格反射器 '金屬鏡面與其它類似的 物質。 本發明應用的有，機材料是"有.主動的"，其中它們由適當 的万法泵激引發雷射主動，例如光學或電子能量，進而產 生雷射光。主動有機物質包含主體物與摻雜質，它們以任 何適當的技術沉積在第一鏡面層n〇上，第—鏡面層ιι〇也 在高激 以接近 輸出能 (，請先閲讀背面之注意事項再填寫本頁) 、τ• II β -------- ^ --- -6 This paper is suitable for financial professionals A7 Br 5. Explanation of the invention (4 examples. Figure 3 is the graph of the present invention—if possible 4 The output power and pumping energy of the 'self' peak are shown in Fig. 4 (inset in Fig. 3), which is a function of the emission polarization of the orthogonal plane ^ :: on the film surface. Figures 5A and 5B illustrate the angle between the two planes and the plane of the polarizer. Figure 5A and 5B are a good example. &Quot; $ Comparison of an electronic pump laser device: a laser according to a preferred embodiment of the present invention * Vibration cavity structure cut-off = Ming—An optical system laser device according to a comparative example of the present invention. County 说明 DCM, aluminized tris (8_hydroxyquinine) (Alq3) CBP, DCM2 , Rhodamine-6G, rhodamine-6G, Coumarin-47, and perylene. Figure 9 illustrates a formula based on the undecided date + '' A cross-sectional view of a conventional adjustable optical pump laser. Fig. 10 is a cross-sectional view of H from an electronic pump laser according to a preferred embodiment of the present invention. Fig. 11 illustrates a Φ according to a preferred embodiment of the present invention. Cross-section view of a multi-color, electronic fruit laser. Figure 12 illustrates a cross-sectional view of a tunable electronic system laser according to a preferred embodiment of the present invention. Figure 13 illustrates a reduced waveguide structure according to a preferred embodiment of the present invention. Sectional drawing .. This paper size applies to Chinese national standards ((Please read the notes on the back before filling out this page) 袈 · Order printed by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (5) A7 B7- Economy Printed in Figure 14 of the Ministry of Standards and Industry's Consumer Cooperatives illustrates an optical pumped emission spectrum according to a preferred embodiment of the present invention. Figure 2 Figure 15 illustrates a substrate vertical according to the preferred embodiment of the present invention OVCSEL substrate vertical Natural emission spectrum in the direction. _ 16 illustrates the emission spectrum at the energy level in the preferred embodiment of the vcSEL according to the present invention. FIG. 17 illustrates the field-excitation active gate Pugen excitement in the preferred embodiment of the vcsel according to the present invention. Is a high-resolution emission spectrum of the function. Latu 18 illustrates a preferred embodiment of the vcsel according to the present invention. The Kuo Xia depends on the input-pump energy relationship near the laser king moving threshold. Detailed description -A preferred example of an optical pump laser device 100 of the present invention is shown in the drawing. The laser device 100 includes a first mirror surface U2. The first-mirror layer 11 is a mirror. " It can reflect at least a portion of the light emitted from the organic material layer 112. For example, many mirror layers used in the present invention are used to transmit laser light with suitable characteristics such as wavelength and direction , Bandwidth, brightness, and other similar characteristics, while reflecting light that does not have suitable characteristics. The mirror layer used in the present invention includes, for example, a glass substrate, quartz 'sapphire or plastic, polished scaled indium layer, distributed Bragg reflector' metal mirror, and other similar substances. The present invention is applicable to organic materials such as "active." Wherein, they are activated by appropriate pumping, such as optical or electronic energy, to generate laser light. Active organic substances include a host and a dopant, which are deposited on the first mirror layer n0 by any appropriate technique, and the first mirror layer is also highly excited to approach the output energy (please read the precautions on the back first) Fill out this page again), τ
I -8- 本紙张尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 經濟部中央標準局貝工消費合作社印^ A7I -8- This paper size applies to China National Standard (CNS) A4 (210X 297 mm) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ A7
BT 五、發明説明（6 ) 可任意事先鍍上一個包敷層〗丨丨，其包含的物質具有的折 射係數比有機物質層112的折射係數小。當鍍層n2受到一 個光源例如氮雷射i 18的光學泵激能量泵激時，雷射裝置 100產生一個預定顏色的雷射光束116。 錄層111與112具有任何適當的厚度。以實例方法說明， 圖1較佳實例中的鍍層Hi與112個別大約是2微米（μηι)與 120微米。包敷層lu選擇的厚度最好是可以提供鍍層 對於不透明的第一鏡面層110形成光學隔絕_+。一鍍層112的厚 度可適當選擇以提供均勻泵激以及讓鍍層作-爲包敷層^ ^ 與周圍環境之間的光學波導的功能最佳化。例如，當鍍層 112包含CBP時，120毫微米（nni)的厚度可以導致大约6〇% 的泵激能量吸收以及在485毫微米時大約59%的波導局限因 子。爲了進一步促進鍍層112的波導功能，包敷層lu的折 射係數比鍍層112的折射係數小，因此可以在垂直於裝置 的方向上增加鍍層112内部的光學限制。例如，當包含cBp 的鍍層112做爲主體有機材料時（nq』），包敷層lu包含^ 氧化梦（Si〇2)(折射率"n"約爲L5)。包敷層1丨丨也可以;需 要，例如，第一鏡面層110是爲了讓雷射發射通過時，$ 以不需要包敷層1 1 1。然而，圖1説明的較佳實例中，雷射 是經由鍍層112的側面113發射出去的，所以最好具有包敷 層111。此外，鍍層112最好包含兩個反射面113與114且^ 相平行，因此可Θ在鍍層112中成一個光學諧振器。 錄層111與112以'適當的技術直積在第一鏡面層i 1〇上， 例如各別的電漿增強化學蒸氣沉積與眞空熱氣化E法。鍍層 U 2内的摻雜質濃度通常是質量上少於丨〇 %，但也可以低^ -9- 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公漦） (讀先聞讀背面之注意事項再填寫本頁) 策 參 經濟部中央標準局員工消费合作社印製 A7 -—--—-^______£7* 五、發明説明（7) ~~ ~—~ ?1%乙通常最好的方法是主體物與摻雜質材料以各別 的質量比100 : 1利用共同熱氣化法沉積鍍層丨12。 ' 本發明的雷射裝置是生長在任何有機層112附著的鏡面 印上，且其折射率⑻最好比有機層材料低。可接受的 層材料包含塑膠、玻璃與鍍上二氧化矽的矽。較佳的第— 鏡面層材料是拋光的碍化銦。根據本發明之裝置的血刑長 度是5ππη，雖然更短的裝置例如長度〇.5mm也是有$能 的。 光學平滑性的形成，對於鍍層112相對邊吣陡峭小平面 1Β與1 Η而f是眞空沉積薄膜自然的優點。小平面⑴與 114的形狀與下層第一鏡面層11〇(或如果有利用的話，； 疋包敷層111)相對的小平面—樣。如此，帛—鏡面層加 的侧邊最好是平滑的且相互平行。7%的小平面反射率是 由鍍層112的眞空沉積得到的.，它足夠提供所需的光學回 ^光干回杈也可以由其它結構得到，例如位於有機薄朦 光學泵激區域下方的光柵以形成一個分佈的回授結構。由 鍍層112的眞空沉積而形成小平面！ 13與} 14的另一種方 法，疋鍍層112可以用適當的方法沉積在第一鏡面層 11〇(或包敷層111，如果有利用的話），再切割其組合體以 形成平滑、陡峭的小平面。 本發明任何光學泵激較佳實例例如裝置i 〇〇是利用一個 光源泵激’此$赛的光可以被.鍍層U2的主體材料分子吸 收。例如，裝置100利用氮雷敖118做爲光學泵激源，而氮 雷射118以50赫茲（HZ)重複產生波長337毫微米、5〇〇微微秒 (psec)的脈衝。如圖！所示，泵激光束利用透鏡例如圓柱狀， -10- 本纸張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公楚） --^-------ii 袈—------17------1----------J_______ (請先閲讀背面之注意事項再填寫本頁} A7 ΒΓ 經濟部中央標準局員工消費合作社印製 五、發明説明（8) 透鏡117聚焦成爲條狀光束115至與小平面113、114正交的 薄膜平面上。條狀光束115的寬度可以是任何適當的大 =，例如100微米。泵激光束波導於鍍層112中，因此產生 雷射光束116,並從裝置100的小平面113及/或114發射出 來。此外，經過一個增益引導效應，有機層112發光部份 115的折射係數會比非發光部份的折射係數高，因此在垂 直方向的光學模態提供局限功能。 .圖2説明一個根據本發明的光學泵激雷射較佳實例，其 中它不需要在艘層112上形成條狀層。本較佳實例中，包 覆層ill在有機材料層112沉積的第一鏡面層11〇上形成一 個突起部份。本較佳實例中，光學模態因而局限在與^ 万向。鍍層111與112的寬度最好夠窄以便於只支一 向光學模態（例如，微米）。主動有機層ιΐ2的厚度應 大約等於裝置受料激時，.主.體材料對光束波長之吸收係 數::：Γ如果—個反射層(未顯示)配置在鍍層⑴與第 聚激時’主體材料對光束波長之吸收慨的倒數 馬了保護圖2史的雷射裝置’它視情況可以鍍上—声折 係數比比鍍層112低的透明物質（未顯示）。 3 縫能量密度對裝置刚之峰値輸出功率的相關性實例 出V從這種相關性中，雷射主動的門限値可以 月楚也看出來’晴3中每—個線段落在_性上符驗量 測値’兩條線段落的斜率岐差分量子: 1=主有動門限値之下)至1。物 上）而，有—點必需注意的，·，量測到#差分量子效應 -11 - 木纸張尺度顧悄目家辟(CNsTa4^^ ( 210^¾- (請先閱讀背面之注意事項再填寫本頁) ---(\裝------訂------------->---；------- Ά7 ΒΓ 五、發明説明（9 ) •嶎的叙：：度的低估’因爲光學泵激增益波導裝置内的 =王動區域只是受录激物質中的—小 份，能量都損失在非雷射主動區，在大於"焦耳： =、(Γ:2)(未顯示出)的激態能階時，差分量子效應降 7/。’相對的峰値輸出功率會超以瓦㈤。 睡:」圖3^·的插圖)説明裝置⑽的發射強度通過偏光鏡 不奴、X正交於薄膜表面的平面與偏光鏡平面之間夾角爲 有的係，、。發射是線性偏極，就如同雷射光發射所具 m : 5測到的偏極角是15分貝(dB) ’澡然有-點必 出的：始測結果會受量測:裝置限制。由實驗量測點書 出的貫線遵循sin2()，其中〇爲偏光鏡角度。 一 ^了上述討論的光學i激較佳實例外，本發 i 激有機半導體雷射較佳實例。這種較佳實例利用 ⑽料’當它受到電流激發時會發射光線。 圖^説明本發明中電子泵激雷射裝置較佳實例的截視 主叙ί ·包含—第—電極31、—個底部包敷層32、一 機材料層33、-個頂部包敷層34與一個第二電極 光們，序沉積在第—鏡面層3G上面。主動層33内的 係:。'私度視一些因子而定例如&敷層3 2與3 4的折射 ㈣^有機材料層33包含任何適合的有機電致發光材料， -的~、任一個包敷層32、34中包含-個電洞導 ^ ，例如氟化鎂（M§F2)捧戽10%的TPD。另一個包敷 子導電材料，例如AIq3或氟化鎂掺雜蝴3。對於 匕敷層32、34而1：，氟化鎂可以由，酴鹵金屬代替例 ~7/¥------訂------/ki (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消费合作社印製 12BT V. Description of the invention (6) Any coating layer may be plated in advance arbitrarily, and the substance contained therein has a refractive index smaller than that of the organic substance layer 112. When the plating layer n2 is pumped by an optical pumping energy of a light source such as a nitrogen laser i 18, the laser device 100 generates a laser beam 116 of a predetermined color. The recording layers 111 and 112 have any appropriate thickness. By way of example, the plating layers Hi and 112 in the preferred example of FIG. 1 are approximately 2 micrometers (μηι) and 120 micrometers, respectively. The thickness of the cladding layer lu is preferably such that it can provide a plating layer to form an optical isolation for the first opaque mirror layer 110. The thickness of a plating layer 112 can be appropriately selected to provide uniform pumping and optimize the function of the optical waveguide as a cladding layer and the surrounding optical waveguide. For example, when the coating 112 includes CBP, a thickness of 120 nanometers (nni) can result in approximately 60% pump energy absorption and approximately 59% waveguide confinement factor at 485 nanometers. In order to further promote the waveguide function of the plated layer 112, the refractive index of the cladding layer lu is smaller than the refractive index of the plated layer 112, so the optical limitation inside the plated layer 112 can be increased in a direction perpendicular to the device. For example, when the plating layer 112 containing cBp is used as the host organic material (nq), the coating layer lu contains ^ oxide dream (Si〇2) (refractive index " n " is about L5). The coating layer 1 is also possible; it is required, for example, when the first mirror layer 110 is for laser emission to pass, the coating layer 1 1 1 is not required. However, in the preferred example illustrated in FIG. 1, the laser is emitted through the side surface 113 of the plating layer 112, so it is preferable to have the coating layer 111. In addition, the plating layer 112 preferably includes two reflective surfaces 113 and 114 parallel to each other, so Θ can be an optical resonator in the plating layer 112. The recording layers 111 and 112 are directly deposited on the first mirror surface layer i 10 by an appropriate technique, such as a plasma-enhanced chemical vapor deposition and a hollow thermal gasification E method. The dopant concentration in the coating U 2 is usually less than 丨 0% by mass, but it can also be low ^ -9- This paper size applies the Chinese National Standard (CMS) A4 specification (210X297 cm) (read first and read the back Please fill in this page before printing) A7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs of the People's Republic of China Printed A7 ------------- ^ ______ £ 7 * V. Description of the invention (7) ~~ ~ — ~? 1% B usually the most A good method is to deposit the coating by a common thermal vaporization method with a mass ratio of 100: 1 between the host and the dopant material. '' The laser device of the present invention is grown on a mirror print to which any organic layer 112 is attached, and its refractive index ⑻ is preferably lower than that of the organic layer material. Acceptable layer materials include plastic, glass, and silicon dioxide-coated silicon. The preferred first-mirror layer material is polished indium halide. The length of the blood penalty of the device according to the present invention is 5ππη, although shorter devices such as 0.5 mm in length are also possible. The formation of optical smoothness is a natural advantage of the hollow-deposited thin film with respect to the steep edge facets 1B and 1 of the plating layer 112 relative to the edges. The shape of the facets ⑴ and 114 is the same as that of the facet opposite to the lower first mirror layer 11 (or, if applicable, the 疋 coating layer 111). As such, the sides of the 帛 -mirror layer are preferably smooth and parallel to each other. The facet reflectance of 7% is obtained by hollow deposition of the coating 112. It is sufficient to provide the required optical back light. The dry back can also be obtained from other structures, such as a grating located under the organic thin optical pumping area. To form a distributed feedback structure. Facets are formed by hollow deposition of the plating layer 112! 13 and} 14, another method, the hafnium plating layer 112 may be deposited on the first mirror layer 11 (or the coating layer 111, if applicable) by an appropriate method, and then the combination is cut to form a smooth, steep small flat. Any preferred embodiment of the optical pumping of the present invention, such as the device i 00, is pumped with a light source. The light of this race can be absorbed by the host material molecules of the coating U2. For example, the device 100 uses a nitrogen laser 118 as an optical pumping source, and the nitrogen laser 118 repeatedly generates a pulse with a wavelength of 337 nanometers and 500 picoseconds (psec) at 50 hertz (HZ). As shown! As shown, the pump laser beam uses a lens such as a cylindrical shape. -10- This paper size applies to the Chinese National Standard (CNS) A4 specification (2 丨 0X297).-^ ------- ii 袈 ---- ---- 17 ------ 1 ---------- J_______ (Please read the precautions on the back before filling out this page} A7 ΒΓ Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Description of the invention (8) The lens 117 is focused into a stripe beam 115 to a film plane orthogonal to the facets 113, 114. The width of the stripe beam 115 may be any suitable large =, for example, 100 micrometers. The pump laser beam waveguide is In the coating layer 112, a laser beam 116 is generated and emitted from the facets 113 and / or 114 of the device 100. In addition, the refractive index of the light-emitting portion 115 of the organic layer 112 is higher than that of the non-light-emitting portion through a gain-guiding effect. Has a high refractive index, and therefore provides limited functionality in the vertical optical mode. Figure 2 illustrates a preferred example of an optical pump laser according to the present invention, in which it does not need to form a stripe layer on the ship layer 112. This In a preferred example, the cladding layer ill is on the first mirror layer 11 deposited on the organic material layer 112. Into a protruding portion. In this preferred example, the optical mode is therefore limited to omnidirectional. The width of the plating layers 111 and 112 is preferably narrow enough to support only one-way optical mode (for example, micron). Active organic layer The thickness of ιΐ2 should be approximately equal to the absorption coefficient of the beam wavelength of the main body material when the device is excited. :: Γ If a reflective layer (not shown) is disposed on the coating layer and the polycondensation, the main body material on the beam The reciprocal of the absorption of the wavelength protects the laser device of Fig. 2 'It can be plated as appropriate-a transparent substance (not shown) with a lower acoustic refraction than that of the coating 112. 3 The energy density of the slit is output to the peak of the device An example of the correlation of power is V. From this correlation, the laser active threshold 値 can also be seen from Yuechu. Every line segment in Qingqing 3 is in line with the test of the two line segments. Slope-differential quantum: 1 = below the main moving threshold 値) to 1. On the matter), there are-points that must be noted, ·, measured #differential quantum effect -11-wooden paper scale Gu Qingmujiapi (CNsTa4 ^^ (210 ^ ¾- (Please read the precautions on the back first (Fill in this page again) --- (\ install ------ order ------------- >---; ------- Ά7 ΒΓ 5. Description of the invention (9) • The description of 叙: The degree of underestimation 'because the = King motion region in the optically pumped gain waveguide device is only in the excited material — a small part, and the energy is lost in the non-laser active region, which is greater than " Joules: =, (Γ: 2) (not shown) when the excited state energy level, the differential quantum effect is reduced by 7 /. 'The relative peak 値 output power will be in excess of watts. Sleep: "Figure 3 ^ · 的Inset) shows that the emission intensity of the device ⑽ passes through the polarizer, X is orthogonal to the plane of the film, and the angle between the plane of the polarizer is a system,.. The emission is linearly polarized, just like the laser light emission has m : The measured depolarization angle is 5 decibels (dB). 'There must be a point in the shower: the initial measurement result will be limited by the measurement: device. The line drawn from the experimental measurement point follows sin2 (), Where 0 is the polarizer angle. In addition to the preferred examples of the optical i-laser discussed above, the present example of the i-laser organic semiconductor laser is a better example. This preferred example utilizes the material 'it will emit light when it is excited by a current. Figure ^ illustrates the electronic pumping in the present invention A main section of a laser device with a preferred embodiment is described. Includes a first electrode 31, a bottom coating layer 32, a machine material layer 33, a top coating layer 34 and a second electrode. Deposited on the first-mirror layer 3G. The system in the active layer 33: 'Private depends on some factors such as the refractive index of & coatings 3 2 and 3 4 ^ The organic material layer 33 contains any suitable organic electro Luminescent materials,-~, any of the coating layers 32, 34 contains a hole conduction ^, for example, magnesium fluoride (M§F2) holds 10% TPD. Another coating material, such as AIq3 Or magnesium fluoride doped with butterfly 3. For the cladding layers 32, 34 and 1 :, magnesium fluoride can be replaced by hafnium metal ~ 7 / ¥ ------ Order ------ / ki (Please read the precautions on the back before filling out this page) Printed by the Staff Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs 12
經濟部中央標準局員工消費合作社印裝 五、發明説明（ 如氟化經、氟化卸'鐵化抑或一種透明、低折射 導電性的有機材料。在電流通過電極3丨與3 5時，泰^ =洞注入主動層33 ’此時能量導電主體材料轉送：材 料而發光。 修貝材 一個光學諧振器由裝置3〇〇的邊緣形成，也就 Μ^Μ2。至少電極31與35其中一個會在乂方向形成=狀 万位。電子系激的主動材料部份會在光學增益上改變 此形成一個橫向波導（也就是增益波導效應_^。 在圖5&中説明的電子泵激雷射裝置，主動層3 3的折射伟 數最好比包敷層32與34的折-射係數高，這樣可以確保大 邵份的模態與增益層重疊。包激層32與34的折射係數實 際上最好是一樣以提供鍍層33内最佳化的光學限制。— 包敷層3 2與3 4的厚度實際上應夠厚以避免電極3 1與3 ^ 上的光學模態吸收’並允許有._效的電流注人。對於單—模 態運作，主動層33的厚度實際上應該科雷射波長除以主 動層折射係數的兩倍。對於更多的模態，主動層Μ的厚度 應隨之增加。 鍍層33内的-光學限制也因此形成.，例如，藉由鍍層33 的光學漂白而形成其内部的波導。利用這個技術，一旦主 動層33已經沉積，—個光罩部份蓋住主動層，且主動 層在充滿氧氣環境下曝光於強烈的1；乂光。主動層门沒有 被光罩蓋到的部份因而被漂白；而降低折射係數。主動層 33被光罩蓋到的部份保持原I，具有較高的折射係數，因 此形成内部的光學限制。 另-種實例，光學限制可以藉由第—鏡戸層或底部包敷 ^.1-----ί ! (請先閲讀背面之注意事項再敗寫本頁) 訂-- ---- 13-Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (such as fluorinated fluoride, fluorinated iron, or a transparent, low-refractive conductive organic material. When current passes through the electrodes 3 丨 and 35, Thai ^ = Hole-injection active layer 33 'At this time, the conductive body material is transferred: the material emits light. An optical resonator is formed by the edge of the device 300, that is, M ^ M2. At least one of the electrodes 31 and 35 will Formed in the 乂 direction. The active material part of the electronic system will change the optical gain to form a lateral waveguide (that is, the gain waveguide effect_ ^. The electronic pump laser device illustrated in Figure 5 & The refractive index of the active layer 33 is preferably higher than the refractive index of the cladding layers 32 and 34, so as to ensure that the mode of Da Shaofen overlaps with the gain layer. The refractive indices of the cladding layers 32 and 34 are actually It is best to provide the same optical constraints within the plating layer 33.-The thicknesses of the cladding layers 3 2 and 3 4 should actually be thick enough to avoid optical modal absorption on the electrodes 3 1 and 3 ′ and allow for ._Effective current injection. For single-mode In operation, the thickness of the active layer 33 should actually be the laser wavelength divided by twice the refractive index of the active layer. For more modalities, the thickness of the active layer M should increase accordingly. The optical limits within the plating layer 33 are therefore also Formation. For example, the internal waveguide is formed by optical bleaching of the plating layer 33. With this technique, once the active layer 33 has been deposited, a photomask partially covers the active layer, and the active layer is exposed in an oxygen-filled environment. In the strong 1; light. The part of the active layer door not covered by the photomask is bleached; and the refractive index is reduced. The part of the active layer 33 covered by the photomask maintains the original I and has a high refractive index. Therefore, an internal optical limitation is formed. Another example, the optical limitation can be applied by the first mirror layer or the bottom ^ .1 ----- ί! (Please read the precautions on the back before losing this page ) Order----- 13-
‘A7 BT 五、發明説明（11 層的圖樣化而產生係數波導。例如，光與白 . 底部包敷層32以形成主動層33下方―：：數調：：：： 的布拉格反射器（distributed Bragg refleet_。 J〈刀布 -個光學諸振器可視情況在2方向上形成例 中’頂部與第—電極也做爲光學鏡面，或是，二：：： 透光的，尚反射率鏡面可加在整個結構的兩邊。結】= 最大光學模態應於空間上與光學鏡層的位置匹配。。、 光學模態的波長應該與摻雜材料的增益光譜重疊。 ’ 圖Sb進一步説明一個根據本發明 ^ = 佳實例。本較佳實例巾，第一-電極^ = f田射裳置較 -個連接表面。此外，—個絕缘#”7::二：:吉構以提供 個側邊，且-個沉積在絕緣體上的連接W從第極 延伸至第一鏡面層30的表面上。 本發明包含有资垂結表面發射雷射（◦ vcsel)結」棒.，至 中雷射諧振腔是用來產生一個清楚的輸出功率門限値、2 個明確的雷射光束、譜振腔模態 '以及門限値之上有产小 於1的發射光譜線。縱使是在包含主動區域小則毫微ς 為振=，這些薄膜的高増益也足夠產生雷射主動，因此 可以讓雷射運作時所需要的主動有機材料更少。 經濟部中央標準局貝工消費合作社印製 I--I:--¢11 (請先閱讀背面之注立$頃再资寫本頁) <s. 圖6況明—個根據本發明較佳實例的雷射锴振腔構造截 面圖。=構造中，主動有機材料層1110配置在第一鏡面層 1111與第二鏡面層之間而形成一個厚度t的諧振腔。鍍^ 1110内的有機材料，受到光學4電子方法的泵激而"主動 ^來” 在其内起雷射主動，因此產生雷射光。每-個 第人第鏡面層、1112反射一部份嫜層1110產生的, -14 經濟部中央標準局員工消費合作社印製 Α7 ΒΤ 五、發明説明（12 ) 光線，以致於只有相干性光線通過鍍層1Ul、m2，因此 具有所求之波長與特質的雷射以很窄的頻寬產生。每一個 弟一與第一鏡面層1111、1112最好反射至少9〇%艘層111〇 受泵激產生的光線，較佳的狀況是反射95%，最佳的狀沉 是反射98%’通過第一與第二鏡面層丨丨丨丨、1112的光線通 量實際上是相等的，如圖6所示。例如，如果第二鏡面層 1112反射的的光線百分比例比第一鏡面層i i i丨反射的多， 這時候，通過的光線會最先通過第一鏡面漘丨丨〗丨，而其限 制條件是第一與第二鏡面層的吸收特性是_樣的。 圖7説明一個根據本發明較崔實例之光學聚激〇vcsEL結 構1200。一個第一鏡面層U11 '一個主動有機材料層111〇 與一個第二鏡面層1丨丨2配置在一個實質透明的基板ln j 3 上，主動有機材料層1110受到一個入射的光學泵激能量 1115泵激，光學泵激能量源（未顯示）是任何一種很強的光 源例如一個氮雷射。 ; 第一與第二鏡面層丨i丨丨、丨丨12可以是任何適合的反射材 料或結構。第一鏡面層丨n丨一個較佳的結構是分布的布拉 格反射器（DBIi)介電性鏡面叠層。DBR鏡面已是商業化的 產品’它包含/4個厚介電層’且代表DBR鏡面反射局限帶 的波長。DBR鏡面因此具有控制0VcsEL輸出光譜的功 能’進一步使得輸出的光譜線寬度變窄。Dbr鏡面典型的 特徵具，有的反暫库叛過"％，第二鏡面丨丨U最好是一個 DBR鏡面或合金一如銀、白金一、鋁、鋁鎂合金、或是它們 的合成物。金屬鏡面通常具有的反射率超過9〇%，但是吸 收的光線量比DBR鏡面吸收的還多。當第二鏡面丨丨包含 -15- 本紙倀尺度通州〒圏國家標隼（CNS ) Μ規 (請先閱讀背面之注意事項再填寫本頁) 、-°'A7 BT V. Description of the invention (11 layers are patterned to produce a coefficient waveguide. For example, light and white. Bottom cladding layer 32 to form the active layer 33 below the ― :: number tone :::: Bragg reflector (distributed Bragg refleet_. J <Blade cloth-an optical vibrator may be formed in 2 directions depending on the situation. The top and first electrodes are also used as optical mirrors, or, two :: transmissive, reflective mirrors may be used. Add on both sides of the entire structure. The knot = the maximum optical mode should be spatially matched to the position of the optical mirror layer. The wavelength of the optical mode should overlap the gain spectrum of the doped material. 'Figure Sb further illustrates a basis The present invention ^ = a good example. In this preferred example, the first electrode ^ = ffield shooter is placed on a connecting surface. In addition, an insulation # "7 :: 二 :: jigo to provide a side And, a connection W deposited on the insulator extends from the first pole to the surface of the first mirror layer 30. The present invention includes a rod-shaped surface emitting laser (vcsel) junction rod, to the mid-laser resonance The cavity is used to produce a clear output power threshold. , 2 clear laser beams, spectral cavity modalities', and thresholds have emission spectral lines with a yield of less than 1. Even when the active region is small, femto is vibrated =, the high benefits of these films are also It is enough to generate laser initiative, so it can make less active organic materials needed for laser operation. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, I--I:-¢ 11 (Please read the note on the back first (Writing this page to write this page) < s. Figure 6 illustrates a cross-sectional view of a laser chirped cavity structure according to a preferred embodiment of the present invention. = In the structure, an active organic material layer 1110 is disposed on the first mirror layer 1111 And a second mirror layer to form a resonant cavity with a thickness of t. The organic material in the plated 1110 is pumped by the optical 4-electronic method " active ^ 来 " The light is generated by each of the first layer of the mirror layer and 1112 reflecting a part of the plutonium layer 1110. -14 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ΒΤ 5. Description of the invention (12) Only the coherence The light passes through the coating 1Ul, m2, so it has the desired wave Lasers with special characteristics are generated with a very narrow bandwidth. Each of the first and first mirror layers 1111 and 1112 should preferably reflect at least 90% of the light generated by the pump layer 111. The best condition is to reflect 95 %, The best shape is reflected by 98%. The light fluxes passing through the first and second specular layers 丨 丨 丨 丨, 1112 are actually equal, as shown in Figure 6. For example, if the second specular layer 1112 The percentage of reflected light is more than that of the first specular layer iii 丨. At this time, the passing light will pass through the first specular surface first. The limitation is that the first and second specular layers absorb the light. The characteristics are _like. FIG. 7 illustrates an optical poly-optic vcsEL structure 1200 according to a more exemplary embodiment of the present invention. A first specular layer U11 ', an active organic material layer 111 and a second specular layer 1 丨 丨 2 are disposed on a substantially transparent substrate ln j 3, and the active organic material layer 1110 is subjected to an incident optical pumping energy 1115 Pumping, an optical pumping energy source (not shown) is any strong light source such as a nitrogen laser. The first and second mirror layers 丨 i 丨 丨, 丨 丨 12 can be any suitable reflective material or structure. The first mirror layer 丨 n 丨 A preferred structure is a distributed Bragg reflector (DBIi) dielectric mirror stack. The DBR mirror is already a commercial product ‘it contains / 4 thick dielectric layers’ and represents the wavelength of the limited reflection band of the DBR mirror. The DBR mirror surface therefore has the function of controlling the output spectrum of 0 VcsEL 'to further narrow the width of the output spectral line. The typical characteristics of Dbr mirror surface, some anti-temporary library rebels "%, the second mirror surface 丨 U is preferably a DBR mirror surface or alloy such as silver, platinum, aluminum, aluminum-magnesium alloy, or a combination of them Thing. Metal mirrors usually have a reflectivity of more than 90%, but absorb more light than DBR mirrors. When the second mirror surface 丨 丨 contains -15- standard Tongzhou 通 National Standard (CNS) Μ regulations (please read the precautions on the back before filling this page),-°
經濟部中央榇準局員工消费合作社印製 一個金屬時，OVCSEL結構1200最好台本y 1IH以降低鏡層⑴〇與鏡層1112之間有：二固有機緩衝層 機材料的驟冷。圖7説明的較佳實 界面内有 二二比第一鏡面層⑴1的還大，因 田射光1116疋從弟一鏡面層““發射出來〇, 基板1113是任何適合的透明基板例如石英、_、 =、或輯。基板1113局限的材料對於 ^When a metal is printed by the Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs, the OVCSEL structure 1200 is best to reduce the mirror layer ⑴0 and the mirror layer 1112. There are two intrinsic machine buffer layers: quenching of machine materials. In the preferred solid interface illustrated in FIG. 7, 22 is larger than that of the first mirror layer ⑴1, because the field emission light 1116 疋 is emitted from the first mirror layer ″, and the substrate 1113 is any suitable transparent substrate such as quartz, _ , =, Or series. Substrate 1113 limited material for ^
與鍍層⑽產生的雷射光波長必需是透明=子泵·激月匕I 在本發明所有的較佳實例中，主動有㈣科皎含 :輿掾雜材料分子。分給鍍層:111〇的聚激能量由主體二 ，吸收並措由偶極_偶極傳送以非輕射方法傳送到： =为子。爲了形&這種能量轉移，主體材料的發射光譜必 私輿摻雜材科的奴队兀〗背重ϋ種形成的有效’”彿斯特 (F0rster)"能量轉移只需要;低$度的接雜m，且進—步 降低了雷^^動門限破，；增加」:雷孙^，以及延長運作春 命。本發明利用的主體材料係由任何可以提供很灯的電 傳輸以及可以經由彿斯特能量轉移把能量轉移到摻雜材料 或捕穫載子的材料中選出的。此外，能量轉移至摻雜材 的速率必需比王體材料中非輻射再結合速率快。本發明 用的接雜材料是任何與主體：摻質系、统㈣明區域具有相 同發冷光（雷射主動）光譜範園的高效率發冷光分子。本發 明中做爲主動气機材料的主體.：摻質系統實例以及其〜^ 相關的雷射主動‘徵在表〗〗）中有説明。一些化學材 料的化予式諸如DCM(俄亥俄州，戴頓的伊斯頓公司 (Exciton lnc. 0f Dayt〇n，〇hi〇)、a%、CBp、DCM2(俄亥俄 16- 本紙張尺度朝巾The wavelength of the laser light generated with the coating layer must be transparent = sub-pump · moon-eating dagger I. In all the preferred embodiments of the present invention, the active material has a molecule: Divided to the coating: 111 □ of poly-excited energy is absorbed by the main body 2 and transmitted by the dipole_dipole transmission in a non-light-emitting method to: = as the son. In order to shape & this kind of energy transfer, the emission spectrum of the host material must be private, and the material of the doped material family must be effective. "F0rster" " Energy transfer only needs; low $ The degree of coupling is m, and the step-by-step reduction of the thundering threshold is increased; the increase is "thundering", and the operation life is extended. The host material utilized in the present invention is selected from any material that can provide very lamp-like electrical transmission and that can transfer energy to doped materials or trapped carriers via Foster Energy Transfer. In addition, the rate of energy transfer to the dopant material must be faster than the non-radiative recombination rate in royal materials. The dopant material used in the present invention is any high-efficiency luminescent light molecule that has the same luminescent (laser active) spectral range as the main body: the dopant system and the Tongming area. In the present invention, it is the main body of active gas turbine materials: an example of a dopant system and its related laser active 'signs' are listed in the table)). Chemical formulas of some chemical materials such as DCM (Exciton lnc. 0f Dayton, Ohio, Dayton, Ohio), a%, CBp, DCM2 (Ohio, 16- this paper-size paper towels)
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摻雜質雷射主動波雷射主動門 長（毫微米） 運作壽命 (泵激雷射 脈衝數）Doped Laser Active Wave Laser Active Gate Length (nm) Operating Life (Pump Laser Pulses)
】素：镇的伊斯頓公司）、若丹明-6G(rh。—^价香】 Su: Town's Easton Company), Rhodamine-6G (rh .— ^ valentine
中。太盆（c〇Umann-47) '以及Perylene各別説明於圖8A-8G 例“，明利用的有機材料以任何適當的技術沉積而成， W如眞空熱氣化法。 asBa==ss的主動有機材料實例 主體 - 本發月包含6々較佳貫例，其雷射备光是可以調整至特定 的波長。圖9説明一個根據本發明較佳實例之光學泵激、 可'周式OVCSEL 1250實例。本實例中，主動有機材料層 1110的厚度t單純地從構造的左邊丄】17往右邊⑴8漸漸改 ，。f另-種較倬實例中，鍍廣111〇的厚度以逐步方式改 又而彳于到不連續鈞發射波長。一藉著改變〇vcsel諧振腔的 厚度，由於鍍層1110内雷射主動材料很寬的增益光譜，發 射波長可以調整變化至5〇毫微米或更多。這種厚度的變化in. Taipan (c〇Umann-47) and Perylene are illustrated in Figures 8A-8G, respectively. "The organic materials used are deposited by any suitable technique, such as the air thermal gasification method. AsBa == ss initiative Organic Material Example Body-This month contains a 6々preferred example whose laser preparation light can be adjusted to a specific wavelength. Figure 9 illustrates an optically pumpable, 'circumferential OVCSEL 1250' according to a preferred example of the present invention Example. In this example, the thickness t of the active organic material layer 1110 is simply changed from the left side of the structure 1717 to the right side ⑴8. In another example, the thickness of the plating layer 11110 is changed in a stepwise manner. However, due to the discontinuous emission wavelength. By changing the thickness of the 0vcsel cavity, the emission wavelength can be adjusted to 50 nm or more due to the wide gain spectrum of the laser active material in the coating 1110. This Variation in thickness
I -17- 本紙張尺度適用中國國家標準（CNS )八4規格（2丨〇><297公釐） --；-------户 、裝—----^--訂 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製I -17- This paper size is applicable to China National Standard (CNS) 8-4 specification (2 丨 〇 > < 297 mm)-; --- --- Household, installed ------ ^- Order (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs
A 7 BT 五、發明説明（15) 可以利用某些技術形成，例如，在生長鍵層ΐιι〇時利用滑 動的隆光罩罩著基板。另—種可行性是，相對於泵激光束 源傾斜基板而有效地改變厚度。可調式㈣肌由篆激光 束1115泵激，它在點乂0激發主動有機材料鍍層，點χ〇與 右邊緣1118距離d。雷射發射1116波長是諧振腔厚度t與鍍 層1110内有機材料之折射係數的函數。藉由改變點x〇的位 置OVCSEL結構1250不同的部份會受到泵激光束1115的 激發^而產生不同的發射1116波長。改變相改變χ〇的检 置可藉由一些方法達到，例如移動〇vcsel楱造以％的位 置、移動泵激光束⑴5的位置-或角度、或同時進行兩者。 下面實例説明此方法的結果，本發明者藉著改㈣層mo 的厚度從430毫微米改至5⑽毫微米而改變本發明光學裝激 Alq3 雷射的發射波長，從598毫微米至咖毫微米。 _説明-個根據本發明較佳實例之電子錢〇vcsel =1300。第-鏡面層1U1、—層主動有機材料⑴（包 田^ 1110a、lll〇b、i110c)以及第二鏡面層ιιΐ2配置在 -個貫質上的透明基板1113。如果第一與第二鏡面層 :⑴二m不能做爲電極，或是，如果它需要分隔的電 f H極1120配£在第—鏡面層lum主動有機材料 :L11〇(間，且第：電極1121配置在主動有機材料層1110 二鏡面層1112之間。本較佳實例中，鍵層ιιι〇中的有 機材料是-種電致發光體，所以當電流通過時，它受到泵 生雷射光。就本技藝中尤知的-點，鍍層1110中的 有機材枓（以及本發明中的其它電子$激較佳實例）通常包 含二個副層：—個電洞傳輸層（"HTL") lHpa、—個發射層 請 先 閱 讀 背 之 注 意. 事 項 再 裝 訂 經濟部中央標準局員工消费合作社印製 "18- 經濟部中央標準局員工消费合作社印製 Ά7 ΒΓ 五、發明説明（16) ("EL") 1110b、以及一個電子傳輸層（"ETL") 1110c。第一 與第二電極1120、1121(圖1 〇中顯的較佳實例，第一與第 二電極個別是陽極與陰極）實際上對鍍層111 〇b發射的光線 是透明的，且最好包含氧化錫銦或任何其它透明的導體。 本發明的一個較佳實例中，多重電子泵激OVCSEL結構 是安置在一個疊層裝置1350中以發射各種不同顏色的雷射 光，如圖11所示。疊層裝置1350包含圖10説明的構造， 但也包含一値第三鏡面層I211、一個第三嘴極丨22〇、第 '二 主動有機材料的副層12 10 a、121 0 b、與12 10 c (個別對應於 HTL、EL、ETL層）、與一個第四鏡面層ι212，如圖i }所 示。如OVCSEL構造1300所示/，如果各別的鏡面層構造 1111、1112、1211、與1212不能做爲電極，或是，如果它 需要與鏡面構造分開的電極，電極丨120、1121、1220、 1221才需要配置到疊層裝置·1350中。雖然，只有兩個 OVCSEL構造顯示在疊層裝置1350中，本發明包含的較佳 實例中，三個或更多的0VCSEL構造是堆疊在單一結構 中。OVCSEL結構的疊層促進了多重顏色的雷射主動，每 —個顏色從個別的OVCSEL，獨自或相結合發射出來。 本發明包含的電子泵激OVCSELs可調整至特定波長。圖 1 2説明一個根據本發明較佳實例的可調式〇VCSELs 1351。如已描述過的光學泵激可調式ovcsel 1250， OVCSE^ 1351的雷射光發射波長可藉著改變〇VCSEL諧振 腔的厚度t而碉整。t的變化是油控制第二電極1121與第二 鏡面層1112之間的距離t 1而改變。t 1距離的變化是藉著控 制第二鏡面層1112朝著或遠離第:‘二電極,μ 2丨的移動而改 , / -19- 尽紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公廢 (請先閱讀背面之注意事項再填寫本頁) • n^n —m f^n· —^n flu fm 条 、-°A 7 BT V. Description of the invention (15) It can be formed by using some technologies, for example, the substrate is covered with a sliding hood when the key layer is grown. Another possibility is to effectively change the thickness by tilting the substrate with respect to the pump laser beam source. The adjustable diaphragm muscle is pumped by a holmium laser beam 1115, which excites an active organic material coating at point 乂 0, a distance d from point χ0 to the right edge 1118. The laser emission 1116 wavelength is a function of the cavity thickness t and the refractive index of the organic material in the coating 1110. By changing the position of the point x0, different parts of the OVCSEL structure 1250 will be excited by the pump laser beam 1115 ^, resulting in different emission 1116 wavelengths. The detection of the phase change χ0 can be achieved by some methods, such as moving the position of vcsel to the% position, moving the position of the pump laser beam ⑴5-or the angle, or both. The following example illustrates the results of this method. The inventors changed the emission wavelength of the optically excited Alq3 laser of the present invention by changing the thickness of the layer mo from 430 nm to 5 nm, from 598 nm to ca nm . _Explanation- An electronic money according to a preferred embodiment of the present invention vcsel = 1300. The first-mirror layer 1U1, the first layer of active organic material 包 (Baotian ^ 1110a, ll10b, i110c) and the second mirror layer ι2 are arranged on a transparent substrate 1113. If the first and second mirror layers: ⑴2m cannot be used as electrodes, or if it requires a separated electric fH electrode of 1120, in the first-mirror layer lum active organic material: L11〇 (and: The electrode 1121 is disposed between the active organic material layer 1110 and the two mirror layers 1112. In this preferred example, the organic material in the bond layer is a kind of electroluminescence, so when the current passes, it is subjected to pumped laser light As far as is known in the art, the organic material in the plating layer 1110 (and other preferred examples of electron excitation in the present invention) usually includes two secondary layers: a hole transport layer (" HTL " ) lHpa, please read the note of the launch layer first. Matters are then bound to be printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs " 18- printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of EconomicsΆ7 ΒΓ 5. Invention Description (" EL ") 1110b, and an electron transport layer (" ETL ") 1110c. The first and second electrodes 1120, 1121 (the preferred examples shown in Figure 10), the first and second electrodes are anodes individually And cathode) actually The light emitted by 111 〇b is transparent and preferably contains indium tin oxide or any other transparent conductor. In a preferred embodiment of the present invention, a multiple electron pumped OVCSEL structure is disposed in a stacked device 1350 to emit Laser light of various colors is shown in Fig. 11. The laminating device 1350 includes the structure illustrated in Fig. 10, but also includes a third mirror layer I211, a third nozzle electrode 22o, and a second active organic material. Sub-layers 12 10 a, 121 0 b, and 12 10 c (individually corresponding to HTL, EL, ETL layers), and a fourth mirror layer ι212, as shown in Figure i}. As shown in the OVCSEL structure 1300 /, If the respective mirror layer structures 1111, 1112, 1211, and 1212 cannot be used as electrodes, or if it requires an electrode separate from the mirror structure, the electrodes 120, 1121, 1220, and 1221 need to be configured in a laminated device. 1350. Although only two OVCSEL structures are shown in the stacking device 1350, in the preferred embodiment included in the present invention, three or more 0VCSEL structures are stacked in a single structure. The stacking of OVCSEL structures promotes multiple Laser master Each color is emitted from an individual OVCSEL, alone or in combination. The electronically pumped OVCSELs included in the present invention can be adjusted to a specific wavelength. Figure 12 illustrates a tunable 0VCSELs 1351 according to a preferred embodiment of the present invention. The optical pumping tunable ovcsel 1250, OVCSE ^ 1351 laser light emission wavelength has been described, and can be adjusted by changing the thickness t of the VCSEL resonator. The change in t is a change in the distance t 1 between the oil control second electrode 1121 and the second mirror layer 1112. The change in the distance at t 1 is changed by controlling the movement of the second mirror layer 1112 toward or away from the second: 'second electrode, μ 2 丨, / -19- as far as the paper size is applicable, the Chinese National Standard (CNS) Α4 specification (210X297 Public waste (please read the precautions on the back before filling this page) • n ^ n —mf ^ n · — ^ n flu fm,-°
BT 五、發明説明（17 ) 臭；1或疋’反之亦然。光學透鏡1130配置在第二電極1121 與第一鏡面層1 1 12之間以防止t丨改變時不會失去控制鍍層 1110b發射出的雷射光。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再沒寫本頁) 所有本發明的較佳實例視情況可在有機層周圍包含波導 與包敷層以減少有機層内最小的波導損失。例如，在電致 發光裝置中利用金屬電極時，厚度15〇毫微米的有機層内 部的波導光學損失通常高達1〇〇〇公分q或更高。如圖13所 不疋構造1400就是用來降低這種損失至最卄，構造14〇〇包 皮導層1161與1162直接靠在有機層111〇，呈包敷層116〇 與1163個別直接靠在波導層u q與丨162上。如本技藝所知 的與先則説明過的，如果鍍層111〇包含一個電致發光材 料’ i可以包含多重副層（也就是，HTL、肌、ETL鍍 ，）。波導層116·1、1162是高度透明以使光學損失降至最 )且其特徵是尚折射係數。包敷層1160、1163也是透明 的但具有的折射係數比波導層丨丨61、11Μ低。包敷層 1160、1163通常比波導層U61、1162具更高的導電度，所 以包放層1160、1163其中一個主要的功能是導通電流。結 =1400可以降低有機層111〇中發射光的光學限制，因此光 千損失可以降低至1〇cm-i或更低。結構視情況而定可 乂利用本發明中任何光學或電子泵激較佳實例。例如，利 用本發明之光學泵激較佳實例1200時，構造1400可以由圖 二中<•王動有機、材料層丨丨1〇代替。同樣地，利用本發明之 书子系激較佳實13〇〇時，樣造14〇〇可以由鍍層lli〇c、 1U〇b、與1110c代替，以致於構造1400夾置於電極1120與 1121之間。利用電子泵激較佳實例時，，波導與包敷層 -20- 本紙張尺度適(ΤΓ〇-χ297^7 Λ 7 -------Br五、發明説明（18 ) 經濟部中央標準局負工消費合作社印製 60 1161 1162、1163必需具夠強的導電性以便從電極 U20、1121提供電荷載子至導電層111〇。然而，波導層 1161、1162的導電性最好比包敷層i J 6〇、工工的導電性 小，而包敷層U60、1163的導電性比周圍電極ιΐ2〇、ιΐ2ι 的導電性小。波導與包敷層！ ！ 6 〇、1 i 61、116 2、i 16 3使用 的材料最好是氧化锡銦，其折射係數、導電性與透明度可 因含氧量的改變而改變。 本發明可參考下列非限定的實例而進一步説明。 實例 1 ~~^) 如圖1之個雷射裝置可由下述的方法製造而成。A 與DCM(分子it例大約是5G ·· 1) ：_起在高眞空度（5χι〇·7托耳 (Ton·))蒸鍍於玻璃薄片上。形成厚度3〇〇〇毫微米的 Alq3/DC職層i 12具有折射係數⑷i 7，它與玻璃(n=i 4)形 成-個平板波導，而包敷層在_邊且空氣㈣)在另一邊。 這個平板波導結合鍍層112的折射平面113與114而形成二 個光學諧振腔。 一個具有337毫微米波長、5〇〇微微秒（psec)脈衝的氮雷 射118以5 0赫兹（Hz)的重複速率被利用來產生光學泵激光 束。光學模的橫向限制由光學泵激光束引發 形成。明亮的紅色雷射光束可以很清楚地從； 到，輸出光束的繞射可觀察到是很微弱。輸出雷射光束包 含一些縱向模釋^它以正交於裝置表面的方向發散出來。 在泵激能量200pJ/cm2時，於輪出平面的紅色雷射發射峰 値強度是1 〇8W/cm2(相對大於30W時的量測峰値）。在很多 小時的運作之後（相對於至少106徊雷射脈衝），沒有發現， -21- 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） (讀先閱讀背面之注意事項再填寫本頁) 、'裝.BT V. Invention Description (17) Stink; 1 or 疋 'and vice versa. The optical lens 1130 is disposed between the second electrode 1121 and the first mirror layer 1 1 12 to prevent the laser light emitted from the control plating layer 1110b from being lost when t is changed. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before writing this page) All the preferred examples of the present invention may include waveguides and coatings around the organic layer to reduce the minimum in the organic layer Waveguide loss. For example, when a metal electrode is used in an electroluminescent device, the waveguide optical loss inside the organic layer having a thickness of 150 nm is usually as high as 1000 cm q or higher. As shown in Fig. 13, the structure 1400 is used to reduce this loss to the maximum. The structure 1400 foreskin guide layers 1161 and 1162 directly rest on the organic layer 111o, and the cladding layers 116o and 1163 directly rest on the waveguide. Layers uq and 162. As is known and explained in the art, if the plating layer 1110 contains one electroluminescent material'i, it may contain multiple sub-layers (i.e., HTL, muscle, ETL plating, etc.). The waveguide layers 116 · 1, 1162 are highly transparent to minimize optical losses and are characterized by a high refractive index. The cladding layers 1160 and 1163 are also transparent but have a refractive index lower than that of the waveguide layers 61 and 11M. The cladding layers 1160 and 1163 generally have higher conductivity than the waveguide layers U61 and 1162. Therefore, one of the main functions of the cladding layers 1160 and 1163 is to conduct current. The junction = 1400 can reduce the optical limitation of the emitted light in the organic layer 111, so the light loss can be reduced to 10 cm-i or lower. Depending on the situation, any optical or electronic pumping preferred embodiment of the present invention can be utilized. For example, when the optical pumping example 1200 of the present invention is used, the structure 1400 can be replaced by < • Wang Dong organic, material layer 1 10 in FIG. 2. Similarly, when the book system of the present invention is used to excel 1300, the prototype 1400 can be replaced by the plating layers 11ic, 1U0b, and 1110c, so that the structure 1400 is sandwiched between the electrodes 1120 and 1121. between. When the best example of electronic pumping is used, the waveguide and the coating layer are -20- this paper is of suitable size (ΤΓ〇-χ297 ^ 7 Λ 7 ------- Br V. Description of the invention (18) Central standard of the Ministry of Economic Affairs Printed by the Office of Consumer Cooperatives 60 1161 1162, 1163 must be sufficiently conductive to provide charge carriers from the electrodes U20, 1121 to the conductive layer 111. However, the conductivity of the waveguide layers 1161, 1162 is better than the coating The layer i J 6〇, the conductivity of the workers is small, and the cladding layers U60, 1163 are less conductive than the surrounding electrodes ιΐ20, ιΐ2ι. The waveguide and the cladding layer! 6 〇, 1 i 61, 116 2. The material used for i 16 3 is preferably indium tin oxide. Its refractive index, conductivity, and transparency can be changed due to changes in oxygen content. The present invention can be further explained with reference to the following non-limiting examples. Example 1 ~~ ^) The laser device shown in FIG. 1 can be manufactured by the following method. A and DCM (molecular it is approximately 5G ·· 1): vapor-deposited on a glass sheet at a high vacuum (5 × 7 · 7 Torn). The Alq3 / DC layer i 12 with a thickness of 3,000 nanometers has a refractive index ⑷i 7, which forms a slab waveguide with glass (n = i 4), and the cladding layer is on the side and the air is on the other side. Aside. This slab waveguide combines the refractive planes 113 and 114 of the plated layer 112 to form two optical resonant cavities. A nitrogen laser 118 with a wavelength of 337 nanometers and a 500 picosecond (psec) pulse was used at a repetition rate of 50 hertz (Hz) to generate an optical pump laser beam. The lateral confinement of the optical mode is induced by the optical pump laser beam. The bright red laser beam can be clearly seen; the diffraction of the output beam can be observed to be very weak. The output laser beam contains some longitudinal modes, which diverge in a direction orthogonal to the surface of the device. At a pumping energy of 200 pJ / cm2, the intensity of the red laser emission peak 値 in the wheel-out plane is 108 watts / cm2 (the measured peak 値 when it is greater than 30W). After many hours of operation (compared to at least 106 laser pulses), it was not found that -21- This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297 mm) (read the precautions on the back before filling (This page), 'install.
、1T ,<-v A7 ΒΓ 五、發明説明（19), 1T, < -v A7 ΒΓ 5. Description of the invention (19)
AlqVDCM薄膜的退化。這種現象顯示Aiq3/DCM薄膜具有 高度的光化學穩定性’且適合利用在電子泵激有機雷射 上0 實例2 一個雷射以眞空沉積一 12〇毫微米厚之有機薄膜包含 perylene摻雜的CBP到抛光之磷化銦第—鏡面層（1〇〇)結^ 表面上。第一鏡面層以電漿增強化學蒸氣沉積法先鍍丄: 層2微米厚之二氧化矽。雷射受―個具有337毫微米波長、 500微微秒（psec)脈衝的氮雷射118以5〇赫茲(Hz)的重複速 率光學泵激。泵激光束被聚焦在有機薄膜上寬5〇微米的區 域以形成增益區域。 / 圖1 4説明光學泵激雷射在泵激能量低於（4毫微焦耳〕且 剛好在門限値（5毫微焦耳）之上時的邊緣發射光譜' 雷射 主動剛好出現在波長485毫微米的光譜窄學（最大値一半之 ，，度（FWHM) 2毫微米）。圖14中的插圖是雷射輸出脈衝 能量以泵激脈衝能量爲函數的關係圖，它清楚地顯示出泵 激脈衝能量5毫微焦耳的雷射主動門限値（它相對於能量密 度5pJ/cm2)。此外，這種雷射顯現出超過1〇5個雷射脈衝的 運作壽命。 經濟部中央標準局員工消費合作社印製 (讀先閱讀背面之注意事項再填寫本頁) 實例3 一個雷射以眞空沉積一有機薄膜包含香豆素_47摻雜的 CBP到华光之磷化|銦第一鏡面層（⑺㈨結晶表面上。第一鏡 面層以璉漿增強化學蒸氣沉.積^法先鍍上一層2微米厚之二 氧化矽。雷射受一個具有337毫微米波長、5〇〇微微秒（pec) 脈衝的氮雷射118以50赫茲（Hz)沾重複速率光學泵激。泵 -22-Degradation of AlqVDCM film. This phenomenon shows that the Aiq3 / DCM film has a high degree of photochemical stability and is suitable for use in an electronically pumped organic laser. Example 2 A laser is deposited in the air to form a 120 nm organic film containing perylene doped. CBP onto the polished surface of the first mirror layer (100) of indium phosphide. The first mirror layer is first plated with plasma enhanced chemical vapor deposition: a layer of 2 micron thick silicon dioxide. The laser is optically pumped with a nitrogen laser 118 having a wavelength of 337 nanometers and a pulse of 500 picoseconds (psec) at a repetition rate of 50 hertz (Hz). The pump laser beam is focused on a 50 micron wide area on the organic film to form a gain area. / Figure 1 4 illustrates the edge emission spectrum of an optical pump laser when the pump energy is lower than (4 nanojoules) and just above the threshold 値 (5 nanojoules). The laser active occurs just at the wavelength of 485 nanometers. Micron spectral narrowness (maximum half of the degree, degree (FWHM) 2 nm). The inset in Figure 14 is a plot of laser output pulse energy as a function of pump pulse energy, which clearly shows the pumping Laser active threshold 値 with a pulse energy of 5 nanojoules (it is 5pJ / cm2 relative to the energy density). In addition, this laser shows an operating life of more than 105 laser pulses. Staff consumption of the Central Bureau of Standards, Ministry of Economic Affairs Printed by a cooperative (read the precautions on the back and then fill out this page) Example 3 A laser deposits an organic thin film containing coumarin_47-doped CBP to the phosphorescence of Huaguang | Indium first mirror layer ( ⑺㈨ On the crystal surface. The first mirror layer is reinforced with chemical vapor deposition. The method first deposits a layer of silicon dioxide with a thickness of 2 micrometers. The laser is exposed to a wavelength of 337 nanometers and 500 picoseconds (pec). Pulsed nitrogen laser 118 weighed at 50 hertz (Hz) Complex rate optical pumping. Pump -22-
經濟部中央標準局員工消費合作社印製 A 7 -------- _ ΒΓ 五、發明説明(20 ) 激光東被聚焦在有機薄膜上寬50微米的區域以形成增益區 域0 此光子泵激田射產生的雷射波長大約是455毫微米，且 雷射主動門限値是叫W。此外，這種雷射顯現出雷射 脈衝103級數的運作壽命。 實例4 個田射以眞空沉積一有機薄膜包含香豆素-30摻雜的 CBP到拋光之磷化銦第_鏡面層(1〇㈨結晶表面上。第—鏡 =層以私；!：増強化學蒸氣沉積法先鍍上一層2微米厚之二 氧化碎。雷射受—個具有337毫微米波長、5〇〇微微秒(ρ㈣ 脈衝的氮雷射118以50赫茲（Hz)的重複速率光學泵激。泵 激光束被聚焦在有機薄膜上寬5 0微米的區域以形成增益區 域。 此光學栗激雷射產生的雷射.波長大約是5 10毫微米，且 田射主動門限値是丨3 pJ/cm2。此外，這種雷射顯現出雷射 脈衝102級數的運作壽命。 實例5 一個雷射以眞空沉積一有機薄膜包含DCM2摻雜的Alq3 到抛光之磷化銦第一鏡面層（1〇〇)結晶表面上。第一鏡面層 以电增強化學蒸氣沉積法先鍵上一層2微米厚之二氧化 石夕。雷射受—個具有337毫微米波長、500微微秒（psec)脈 衝的氮芦射118#f 〇赫茲（Hz)的.重複速率光學泵激。 此光學泵激雷‘產生的雷射__波長大約是670毫微米，且 运射主動門限値是2.5μJ/cm2。此外，這種雷射顯現出超過 106個雷射脈衝的運作壽命，以发大約3 0.%的差分量子效， -23- 本紙張尺财(格（21()><297公楚） 1_,Μ------Γ.裝-------訂---II---,ϋ. (請先閲讀背面之注意事項再填寫本f) 經濟部中央標準局員工消費合作社印製 kl ΒΓ 五、發明説明（21 ) 應。 實例6 一個雷射以眞空沉積一有機薄膜包含DCM摻雜的Alq3到 抛光之磷化銦第一鏡面層（1〇〇)結晶表面上。第一鏡面層以 電漿增強化學蒸氣沉積法先鍍上一層2微米厚之二氧化 矽。雷射焚一個具有337毫微米波長、5〇〇微微秒（pse幻脈 衝的氮雷射118以5 0赫茲（Hz)的重複速率光學泵激。 此光學泵激雷射產生的雷射波長大约是15〇毫微米，且 雷射主動門限値是3pj/cm2。此外，這種雷&顯現出超過 106個雷射脈衝的運作壽命，以及大約3〇%的差分量子效 應。 - 實例7 —. 如圖7中説明的較佳實例，一個〇VCSEL 12〇〇的形成包 含一個摻雜DCM雷射染料的銘化三（8 _羥基喹啉）（Alq))主 動層1110。主動層1110的厚度是5〇〇毫微米。鍍層111〇才 DCM雷射染料的重量濃度是3%。主動層111〇是以熱蒸鍍 .方法在5 X 10.7拖耳下沉積在第一鏡面層〖丨1 1 (本實例中它是 一個DBR鏡面）_上。緩衝層1114包含八193且沉積覆蓋在主動 層mo上，而一個銀鏡面層1112沉積在緩衝層1114上。缓 衝層1114與DBR鏡面層1111各別的厚度是2〇毫微米與2〇〇 毫微米。DBR鏡面層1111對於600毫微米至700毫微米之範 圍的反，射率大於,99%，而銀鏡面的反射率計算出約爲 91%。 -一 OVCSEL 1200受一個500微微秒（psec)脈衝的氮雷射"8 (337毫微米）以50赫茲（Hz)的重複速率光學.系激。泵激光束 • ·· -24- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） . I —〆 X-- j (請先閲讀背面之注意事項再填寫本頁) 、-0· ,4Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A 7 -------- _ ΒΓ V. Description of the invention (20) The laser is focused on a 50 micron wide area on the organic film to form a gain area. 0 This photon pump The laser wavelength generated by the laser is about 455 nm, and the laser active threshold 値 is called W. In addition, this laser shows the operational life of 103 series of laser pulses. Example 4 An organic thin film was deposited in the field by a thin film containing coumarin-30 doped CBP onto a polished indium phosphide mirror layer (10㈨ on the surface of the crystal. The first mirror = layer Yi private;!: Strong The chemical vapor deposition method is first coated with a layer of 2 micron thick dioxide. The laser is subjected to a laser with a wavelength of 337 nanometers, 500 picoseconds (ρ㈣ pulsed nitrogen laser 118) at a repetition rate of 50 hertz (Hz). Pumping. The pump laser beam is focused on a 50 micron wide area on the organic film to form a gain region. The laser generated by this optical pump laser. The wavelength is about 5 10 nm, and the field emission active threshold is 丨3 pJ / cm2. In addition, this laser shows the operating life of a series of 102 laser pulses. Example 5 A laser deposits an organic thin film containing Alq3 doped with DCM2 to a first mirror layer of polished indium phosphide (100) on the crystal surface. The first mirror layer is first bonded with a layer of 2 micron thick dioxide by electro-enhanced chemical vapor deposition. Laser receiving—500 nanometers (psec) with a wavelength of 337 nanometers Pulsed nitrogen reed 118 # f 〇Hz (Hz). Repetition rate optical pump The wavelength of the laser generated by this optical pump laser is approximately 670 nanometers, and the active emission threshold 値 is 2.5 μJ / cm2. In addition, this laser shows an operating life of more than 106 laser pulses, In order to generate a differential quantum effect of about 30.%, -23- this paper rule (grid (21 () > < 297 Gongchu) 1_, Μ ------ Γ. 装 ----- --Order --- II ---, ϋ. (Please read the notes on the back before filling in this f) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs kl ΒΓ 5. Description of the invention (21) Example 6 A An organic thin film consisting of DCM-doped Alq3 is deposited by laser on the crystal surface of the polished first mirror layer (100) of indium phosphide. The first mirror layer is firstly coated with a plasma enhanced chemical vapor deposition method. 2 Micron-thick silicon dioxide. The laser burns a nitrogen laser 118 with a wavelength of 337 nanometers, 500 picoseconds (pse), and pumps optically at a repetition rate of 50 hertz (Hz). This optical pumped laser The laser generates a laser wavelength of about 150 nm and the laser active threshold 値 is 3 pj / cm2. In addition, this laser & shows more than 106 laser pulses. Operating life, and a differential quantum effect of approximately 30%.-Example 7-As shown in the preferred example illustrated in Fig. 7, the formation of a 0VCSEL 12O includes a doped III (8) doped with DCM laser dye. _Hydroxyquinoline) (Alq)) active layer 1110. The thickness of the active layer 1110 is 500 nanometers. The thickness of the plating layer 111 is only 3% by weight of the DCM laser dye. The active layer 111 is by thermal evaporation. The method was deposited on a first mirror layer [5 1 10.7 (it is a DBR mirror surface)] under a 5 X 10.7 drag. The buffer layer 1114 contains eight 193 and is deposited over the active layer mo, and a silver mirror layer 1112 is deposited on the buffer layer 1114. The respective thicknesses of the buffer layer 1114 and the DBR mirror layer 1111 are 20 nm and 2000 nm. The reflectance of the DBR mirror layer 1111 for a range of 600 nm to 700 nm is greater than 99%, while the reflectance of the silver mirror is calculated to be about 91%. -An OVCSEL 1200 is subjected to a 500 picosecond (psec) pulse of nitrogen laser "8 (337 nanometers) optically at a repetition rate of 50 hertz (Hz). Pump laser beam -24- This paper size is applicable to China National Standard (CNS) A4 (210X29 * 7mm). I —〆X-- j (Please read the precautions on the back before filling this page), -0 ·, 4
A7 B7^ 經濟部中央標準局員工消f合作社印製 五、發明説明（22) 對準入射經過職鏡^⑴並聚焦在有機 1〇〇微米的圓點上。在激發波長（也就是，337 =大/ 臟鏡面UU具有的穿透率大約是8〇%。此）争妨 1113包含石英，它對於特徵波長337毫微米 = 透明的0 激尤束疋 基板垂直方向的發射光譜(具15全角度收納圓錐形)利用 -個波長解析心埃⑷的電餘合裝彡機分析並光遂 圖形。爲了避免材科的退化，所有的量測都在乾氮氣環； 下進行。 - 圖工5説明0VCSEL 1200剛好低於雷射主動門限値的自铁 發射光譜。一個諧振腔模態出現在波長635毫微米的位 置二在<600毫微米與>700毫微米時，自然發射因dbr穿透 光譜的調制而過濾出來，進而形成寬摩的衛星波峰。相對 於能量ETH=300J/cm2之雷射主動門限値以上的光譜，完全 是由高增益、窄光譜雷射發射所主宰，就如圖16所示 圖1 7説明OVCSEL 1200在靠近雷射主動門限値時漸漸增 加I激發能階的高解析度發射光譜。它顯示出泵激能量與 光譜最大値一半的全寬度。門限値之下由微諧振腔藉著光 请過滤’從1 2埃寬度的自然發射波學轉移至門限値之上因 雷射發射產生的光譜線< 1埃的全寬度（受解析度限制），可 以很清楚看到。門限値之下的光譜波峰寬度是相關於微諧 振腔的声密度（彳敌,諧振腔膜態間隔與單一摸態線寬的比）， 並且因爲一些縱‘模態的存在洒更寬。門限値之上的模態 競爭局限雷射主動只出現一些縱向模態，導致發射線寬同 時縮小。圖1 7中左邊的插圖説明一個OVSpL具諧振腔厚度， -25 本紙故尺度適用中國國家榡準（CNS ) M規格（训幻97公潑）A7 B7 ^ Printed by the staff of the Central Bureau of Standards, Ministry of Economic Affairs, F. Cooperative. V. Description of the invention (22) Aiming at the incident lens and focusing on the organic dots of 100 microns. At the excitation wavelength (that is, 337 = large / dirty mirror UU has a transmittance of about 80%. This) contends that 1113 contains quartz, which has a characteristic wavelength of 337 nanometers = transparent 0, and the substrate is perpendicular to the substrate. The emission spectrum in the direction (with a 15-angle full-contained conical shape) was analyzed by a wavelength-resolved electro-acoustic combination device, and the image was smoothed. In order to avoid degradation of materials, all measurements were performed under a dry nitrogen ring. -Figure 5 illustrates the self-iron emission spectrum of 0VCSEL 1200 just below the laser active threshold 値. A resonant cavity mode appears at a position of 635 nm. At <600 nm and> 700 nm, the natural emission is filtered out due to the modulation of the dbr penetration spectrum, and then a broad-wave satellite peak is formed. Relative to the laser active threshold with energy ETH = 300J / cm2, the spectrum above 値 is completely dominated by high-gain, narrow-spectrum laser emission, as shown in Figure 16 and Figure 17. The OVCSEL 1200 is close to the laser active threshold. The high-resolution emission spectrum of the I-excitation level is gradually increased in time. It shows the full width of the pump energy and the largest half of the spectrum. Below the threshold 値, the micro-resonant cavity is filtered by light. 'Transfer from the natural emission wave with a width of 12 Angstroms to the spectrum above the threshold 因 due to laser emission. <1 Angstrom full width (limited by resolution ), You can see clearly. The spectral peak width below the threshold 値 is related to the acoustic density of the micro-resonant cavity (enemies, the ratio of the cavity film interval to the single-mode line width), and it is wider because of the existence of some longitudinal modal modes. Modes above the threshold 値 Competitively restricted laser active only appears in some longitudinal modes, which causes the emission line width to decrease at the same time. The illustration on the left in Figure 17 illustrates that an OVSpL has a cavity thickness. The original size of this paper applies to the Chinese National Standard (CNS) M specification.
(請先閏讀背面之注意事項再填寫本百C IW衣 —1 訂 ---------------^ 經濟部中央標準局負工消費合作社印製 Α7 Β?- 五、發明説明（23 ) 475毫微米時之寬大發射線（〇·4±0·1)。考量儀器解析度 (〇.2±0·1)，雷射主動線之高斯（Gaussian) FWHM經計算爲 (〇.2±0.1) 〇 圖1 8説明雷射輸出功率與輸入激發的相關性，它清楚地 顯現出系激能量密.度；ETH=300J/cm2時的門限値。這個門限 値比類似的邊緣發射有機半導體雷射的門限値高兩個級 數，結果在微諧振腔結構（500cm-1)中產生更高的光學損失 與更短的增益長度（5〇〇毫微米）。在ovcSELs中的門限値 時，Alqs : DCM材料增益估計約爲，它與砰化 鎵銦/砷化鎵量子井結構的内部增益大約相等。 本發明的雷射可以應用在很多不同的方面，包含 信、印刷、光學低階轉換、半導體電路蝕 埶 焊接、點焊）、光譜學、交通工具 仃、I測裝置、光學記憶裝置、顯示器' 掃瞄器、指示 器、遊戲機、娛樂系統與感應器。 本發明提供的有機雷射具有的特徵例如很有的 射、王動有機材料最少的使用量、以及容至調整波長心 :录激。本發曰月的垂直腔表面發射結構代 功的小分子量有機半導體微諧振腔 功率門限値的雷射主動實證、一個明確的雷：== 腔模態、以及高於門限値之小於1A的光；束那::； 悉本技藝者對於本文中盥 ， 二瓦、 可以引發出各種;ΓΠ认4 述（發明的較佳實例， U發出各種不同的改變， 之申請專利範圍的精神_域 —^都會包含在附加 -26- 本纸張尺度適用中國國家標準 (210X297公麓） (請先閲讀背面之注意事項再填寫本頁)(Please read the notes on the back first and then fill out this 100 C IW clothing — 1 order --------------- ^ Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Α7 Β?- V. Description of the invention (23) Wide emission line (0.4 · 0 · 1) at 475 nm. Considering the resolution of the instrument (0.2 · 0 · 1), the Gaussian FWHM of the laser active line Calculated as (0.2 ± 0.1) 〇 Figure 18 illustrates the correlation between laser output power and input excitation, which clearly shows the density of the excitation energy; the threshold ； at ETH = 300J / cm2. This threshold 値It is two orders higher than the threshold of similar edge-emitting organic semiconductor lasers, resulting in higher optical losses and shorter gain lengths (500 nm) in the microcavity structure (500 cm-1). At the threshold 値 in ovcSELs, the gain of the Alqs: DCM material is estimated to be approximately the same as the internal gain of the GaGa / GaAs quantum well structure. The laser of the present invention can be applied in many different aspects, including Letter, printing, optical low-order conversion, semiconductor circuit corrosion welding, spot welding), spectroscopy, transportation technology, I measurement It is set, an optical storage device, a display 'scanners, indicator, game consoles, entertainment systems and sensors. The organic laser provided by the present invention has characteristics such as high radiation, minimum usage of organic materials, and capacity to adjust the wavelength and the center of the laser. The active laser demonstration of the power threshold 値 of a small molecular weight organic semiconductor microresonator with a vertical cavity surface emission structure as described in this paper, a clear mine: == cavity mode, and light less than 1A above the threshold 値; Buna ::; I understand that the artist in this article, the two tiles, can lead to a variety of; ΓΠ recognized 4 (the preferred example of the invention, U issued a variety of different changes, the spirit of the scope of patent application _ domain — ^ It will be included in the appendix-26- This paper size applies the Chinese national standard (210X297 feet) (Please read the precautions on the back before filling this page)
Claims (1)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4606197P | 1997-05-09 | 1997-05-09 | |
| US08/859,468 US6111902A (en) | 1997-05-09 | 1997-05-19 | Organic semiconductor laser |
| US5317697P | 1997-07-18 | 1997-07-18 | |
| US09/010,594 US6160828A (en) | 1997-07-18 | 1998-01-22 | Organic vertical-cavity surface-emitting laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW381363B true TW381363B (en) | 2000-02-01 |
Family
ID=27486023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| TW87107163A TW381363B (en) | 1997-05-09 | 1998-05-08 | Organic lasers |
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| AU (1) | AU7477198A (en) |
| TW (1) | TW381363B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113376748A (en) * | 2021-06-17 | 2021-09-10 | 中国科学院半导体研究所 | Composite wave-splitting device of integrated silicon-based Bragg reflector and preparation method thereof |
-
1998
- 1998-05-08 TW TW87107163A patent/TW381363B/en not_active IP Right Cessation
- 1998-05-08 AU AU74771/98A patent/AU7477198A/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113376748A (en) * | 2021-06-17 | 2021-09-10 | 中国科学院半导体研究所 | Composite wave-splitting device of integrated silicon-based Bragg reflector and preparation method thereof |
| CN113376748B (en) * | 2021-06-17 | 2022-08-02 | 中国科学院半导体研究所 | Composite wave-splitting device of integrated silicon-based Bragg reflector and preparation method thereof |
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| AU7477198A (en) | 1998-11-27 |
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