TW381320B - Method for improving the alignment of semiconductor processes - Google Patents

Method for improving the alignment of semiconductor processes Download PDF

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Publication number
TW381320B
TW381320B TW087115885A TW87115885A TW381320B TW 381320 B TW381320 B TW 381320B TW 087115885 A TW087115885 A TW 087115885A TW 87115885 A TW87115885 A TW 87115885A TW 381320 B TW381320 B TW 381320B
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Taiwan
Prior art keywords
alignment
layer
forming
semiconductor substrate
polycrystalline silicon
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TW087115885A
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Chinese (zh)
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Jia-Jen Chen
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United Microelectronics Corp
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Priority to TW087115885A priority Critical patent/TW381320B/en
Priority to US09/189,119 priority patent/US6346456B2/en
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Publication of TW381320B publication Critical patent/TW381320B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A kind of method for improving the alignment of semiconductor processes which has the following steps: firstly, providing a semiconductor substrate including a field region and an alignment line in which the alignment line further includes an alignment mark; forming shallow trench isolation structure on the field region and alignment mark; filling an isolation layer in each shallow trench isolation structure; partly or wholly removing the filled isolation object in the shallow trench isolation structure; forming a gate oxide on whole surface of semiconductor substrate; then, forming a polycide layer on the gate oxide; defining the polycide layer to form a polycide line.

Description

^^73twf.doc/008^^ 73twf.doc / 008

五、發明説明（I ) 本發明是有關於一種改善半導體製程中，對準 (Alignment)的方法，且特別是有關於一種在元件之淺溝渠 隔離（Shallow Trench Isolation, STI)的結構形成後，部分或 全部去除在對準標記上，的STI塡塞(Filling)，以增加對準 檩記（Alignment Mark)之階梯高度（Step Height)的方法。 積體電路（Integrated Circuits，1C)在我們的日常生活當 中，幾乎可以說已達到無所不在的地步。然而，積體電路 製作的流程非常的複雜，基本上’約需經過數百個不同的 步驟，耗時約一、兩個月的時間才得以完成。而積體電路 工業，基本上是由1C設計、晶圓製造、晶圓測試及晶圓封 裝等四大主要枝幹體系，所組合而成的高科技產業。因此， 積體電路工業不但是一項先端科技的產業，也是一項需要 龐大資金以便能維持其繼續發展的高風險性產業。 以晶圓製造而言，又包括氧化、擴散、沈積、圖案及 倉虫刻等多項製程。又以晶片圖案的形成而言，晶片在進行 表面光阻的曝光時，其所需要的工具除了有光源以外，最 重要的，還有用來提供線路圖案，以便執行圖案轉移的光 罩。 經满部中央標準局負工消费合作社印製 (請先閱讀背面之注意事項再楨寫本頁) -=11 以一般製作元件的製程爲例，通常一個產品所需要的 微影曝光步驟，依其複雜性的不同’約在1 0至1 8次左右。 因此半導體的製作，在每一次執行光阻的曝光之前，必_ 做好各層間的對準，否則不當的圖案轉移，將導致整個晶 片的報廢。 傳統的曝光製程中，使用一種包括對準標記的光罩配 本氏張尺度適用中標♦ ( Μ ) A微格（21()χ297公箱） 2773twf.doc/008 2773twf.doc/008 經濟部中央標準局員工消費合作杜印製 五、發明説明（>) 置圖，相對此一光罩，在欲形成半導體元件之晶圓上，亦 必需包括與光罩相對應的對準標記。在傳統的對準系統 中，對準標記的階梯高度提供一散射場（Scattering Site)或 繞射邊緣(Diffraction Edge)，在進行對準步驟時，通常使 用一黃光，例如，一波長約爲633nm之氮-氖雷射(He-Ne Laser)，作爲光源，對整個晶圓照射，利用投射在對準標記 上的光所產生的繞射圖形（Diffraction Pattern)，反射至一對 準感應器（Alignment Sensor)，例如，一黑暗區（Dark Field)，明亮區（Bright Field)，或第1階繞射干涉儀對準系 統(First Order Diffraction Interferometer Alignment System)。然而，如果晶圓上的對準標記之階梯高度不夠， 例如，小於200A，所產生之繞射現象不夠明顯，使得對準 信號（Alignment Signal)太微弱’或雜訊比率（Noise Ratio) 太大，而無法由對準感應器偵測到任適當的對準信號，造 成對準錯誤。 在傳統超大型積體電路（Ultra Large Semiconductor Integration, ULSI)中，STI爲其中之一標準製造流程。而在 STI製程中，氧化層利用之化學機械硏磨法（Chemical-Mechanical Polishing，CMP)進行平坦化之硏磨過程，造成 隔離區域之表面與場區域(Field Region)的表面之間的階梯 高度近乎於零。如以上所述’如果對準線上之對準標記的 階梯高度不足’則會導致對準誤差 參考第la圖至第li圖，一種傳統的ST1製程如圖所‘ 示。如第la圖所示，提供一半導體基底1〇〇，在此半導體 (請先閱讀背而之注意事項再填寫本頁 V衣.V. Description of the Invention (I) The present invention relates to a method for improving alignment in a semiconductor process, and in particular, to a method for forming a shallow trench isolation (STI) structure after a device is formed. A method of partially or completely removing STI filling on the alignment mark to increase the step height of the alignment mark. Integrated circuits (1C) are almost ubiquitous in our daily lives. However, the integrated circuit manufacturing process is very complicated. Basically, it takes about hundreds of different steps and takes about one or two months to complete. The integrated circuit industry is basically a high-tech industry composed of four major branches: 1C design, wafer manufacturing, wafer testing, and wafer packaging. Therefore, the integrated circuit industry is not only an advanced technology industry, but also a high-risk industry that requires huge capital to maintain its continued development. In terms of wafer manufacturing, it also includes multiple processes such as oxidation, diffusion, deposition, patterning, and engraving. In terms of the formation of the wafer pattern, in addition to the light source, the most important tool required for the surface photoresist exposure of the wafer is a photomask for providing a circuit pattern to perform pattern transfer. Printed by the Central Bureau of Standards and Consumers ’Cooperatives (please read the precautions on the back before writing this page)-= 11 Take the general process of making components as an example, usually the lithographic exposure steps required for a product, The difference in complexity is about 10 to 18 times. Therefore, in the fabrication of semiconductors, the alignment between the layers must be done before each exposure of the photoresist, otherwise improper pattern transfer will cause the entire wafer to be scrapped. In the traditional exposure process, a mask including an alignment mark is used to match the Bentley's scale. The winning bid is ♦ (Μ) A microgrid (21 () x 297 boxes) 2773twf.doc / 008 2773twf.doc / 008 Central Standard of the Ministry of Economic Affairs Printed by Du Bureau's consumer cooperation. 5. Description of the invention. For this photomask, the alignment mark corresponding to the photomask must also be included on the wafer on which the semiconductor element is to be formed. In the conventional alignment system, the step height of the alignment mark provides a scattering site or a diffraction edge. During the alignment step, a yellow light is usually used. For example, a wavelength of about He-Ne Laser at 633nm is used as a light source to irradiate the entire wafer, and uses a diffraction pattern generated by the light projected on the alignment mark to reflect it to an alignment sensor (Alignment Sensor), for example, a dark field, a bright field, or a First Order Diffraction Interferometer Alignment System. However, if the step height of the alignment mark on the wafer is not enough, for example, less than 200A, the diffraction phenomenon generated is not obvious enough, so that the alignment signal is too weak or the noise ratio is too large. , And any proper alignment signal cannot be detected by the alignment sensor, causing an alignment error. In traditional Ultra Large Semiconductor Integration (ULSI), STI is one of the standard manufacturing processes. In the STI process, the oxide layer is subjected to a planarization honing process by chemical-mechanical polishing (CMP), resulting in a step height between the surface of the isolation region and the surface of the field region. Nearly zero. As described above, 'if the step height of the alignment mark on the alignment line is insufficient', an alignment error will be caused. Referring to FIG. 1 to FIG. 1, a conventional ST1 process is shown in FIG. As shown in Figure la, provide a semiconductor substrate 100, here the semiconductor (please read the precautions before filling in this page V-shirt.

,1T 本紙張尺度適用中國國家標率（CNS)Λ4現格（210x 297公处） 2 773 tw f.doc/008 五、發明説明（々） 基底H)G ± ’誠-&化層（未删巾腳）及一厚約 1.5kA之氮化矽層102。 參考第、lb圖’ _心在氮化雜上—光阻層ι〇4， 以覆盖住半導體基底100之主動區域1〇1，並定義出STI 的圖形。接著，利用軸刻去除未被光阻層104覆麵氮化 砂層1〇2以及魏化層，_露出部分的半基底。然 後再移除部分曝露的半導體基底100，形成一如第lc圖所 示之溝渠結構，其中，溝渠深度大約爲4k人。 在第ld圖中’去除光阻層104，並在半導體基底100 表面’沈積形成一絕緣層106,例如一厚約ιοοοΑ氧化層， 此絕緣層106並塡塞了整個溝渠結構。然後，再於溫度約 爲1000°C的條件’進行回火(Anneai)約30分鐘。 接著，請參考第1 e圖，利用化學機械硏磨法 (Chemical-Mechanical Polishing，CMP)，對整個半導體基底 100進行平坦化硏磨，並以氮化矽層102爲硏磨終止層， 使硏磨過程進行至曝露出氮化矽層1〇2爲止。 經濟部中央標準局Μ工消費合作社印製 (請先間讀背而之注意事項再填寫本頁) 然後，如第if圖所示，將半導體基底100表面上之氮 化砂層102剝除後，再利用氟化氫(HF)溶液，去除墊氧化 層（未於圖顯示）。而在去除墊氧化層的同時’在溝渠結構 中所塡塞之絕緣層106A的表面部分，亦同時被移除。而 得如第lg所示之STI結構。然後，再對半導體基底1〇〇上 的主動區域101進行通道離子植入1〇8 ° 請參考第lh圖，在通道形成之後’在整個半導體基底 100上，形成一閘氧化層110。然後，參考第1i圖，在閘 本紙張尺度適用中國國家摞準（CNS ) Λ4規格（210Χ29?公趙） 27 7 3 twf. doc/〇〇 8 M -, 1T This paper scale is applicable to China National Standards (CNS) Λ4 now (210x 297) 2 773 tw f.doc / 008 V. Description of the invention (々) Base H) G ± 'Cheng- & Chemical Layer ( Feet are not deleted) and a silicon nitride layer 102 with a thickness of about 1.5 kA. Referring to FIG. 1b, the core is on the nitride—the photoresist layer ι04, so as to cover the active area 101 of the semiconductor substrate 100, and define the STI pattern. Next, the shaft-etching is used to remove the nitrided sand layer 102 and the weird layer that are not covered with the photoresist layer 104, and to expose the semi-substrate. Then, a part of the exposed semiconductor substrate 100 is removed to form a trench structure as shown in FIG. 1c, wherein the trench depth is about 4k people. In FIG. 1d, the photoresist layer 104 is removed, and an insulating layer 106, for example, a thick oxide layer is deposited on the surface of the semiconductor substrate 100, and the insulating layer 106 blocks the entire trench structure. Then, annealing was performed at a temperature of about 1000 ° C for about 30 minutes. Next, referring to FIG. 1e, the entire semiconductor substrate 100 is planarized and honed by using chemical-mechanical polishing (CMP), and the silicon nitride layer 102 is used as a honing stop layer to make honing. The grinding process is performed until the silicon nitride layer 102 is exposed. Printed by the Central Standards Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives (please read the precautions before filling out this page). Then, as shown in the figure below, after removing the nitrided sand layer 102 on the surface of the semiconductor substrate 100, The hydrogen fluoride (HF) solution is used to remove the pad oxide layer (not shown in the figure). At the same time as the pad oxide layer is removed, the surface portion of the insulating layer 106A that is blocked in the trench structure is also removed at the same time. Thus, the STI structure shown in Fig. 1g is obtained. Then, channel ion implantation is performed on the active region 101 on the semiconductor substrate 100. Referring to FIG. 1h, after the channel is formed, a gate oxide layer 110 is formed on the entire semiconductor substrate 100. Then, referring to Figure 1i, the Chinese paper standard (CNS) Λ4 specification (210 × 29? Male Zhao) is applied to the paper size of the brake paper 27 7 3 twf. Doc / 〇〇 8 M-

' - . . n __ m* " ·" - .. .··、一··— - 圓圓. -- , J 五、發明説明（広） 氧化層11 〇上形成一複晶砂層112，再利傳統的回火，微 影蝕刻製程，定義出複晶矽線。 如以上所述’在對複晶矽層H2進行微影製程時，利 用在對準線上之對準標記進行曝光對準’然而’在此一傳 統的製程中，由於對準標記上STI中所塡塞的絕緣層106A 表面，至主動區域101表面之高度差’亦即階梯高度’近 乎於零。因此，造成曝光對準的誤差。 因此，本發明的主要目的就是在提供一種改善半導體 製程對準的方法，在淺溝渠絕緣結構形成之後’依實際所 需，淸除部分或全部溝渠絕緣結構中的塡塞絕緣物’使對 準線上之對準標記的階梯高度增加’因而提高對準的精確 度，使得產品的良率提高。 經濟部中央標準局貝工消费合作社印製 ,衣-- I (請先閱讀背面之注意事^再填寫本頁) 爲達成本發明之上述和其他目的’提供一種改善半導 體製程曝光對準的方法，首先，提供一半導體基底’包括 一場區域及一對準線，而對準線上又包括了一對準標記。 在場區域及對準標記上，形成淺溝渠絕緣結構’且在淺溝 渠絕緣結構中，塡塞有一絕緣層。全部或部分去除在對準 標記上，淺溝渠絕緣結構中所塡塞的絕緣物。在整個半導 體基底表面形成一閘氧化層，然後’在閘氧化層上形成一 複晶砂層。定義複晶砂層，以形成一複晶砂線。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例’並配合所附圖式’作詳 細說明如下： 圖式之簡單說明： 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公处） 2773twf.doc/008 Λ 1Γ 經濟部中央標隼局員工消費合作社印製 五、發明説明（t) 第la圖至第li圖繪示出傳統的STI製造方法；以及 第2a圖至第2e圖繪示出基於本發明，一較佳實施例 中，在對準線上之對準標記的STI製造方法。 圖式中標示之簡單說明： 100 :半導體基底 - 101:主動區 102 :氮矽層 10 4 :光阻層 106/106A :絕緣層 108 :通道離子植入 110 :閘氧化層 112 :複晶矽層 210 :閘氧化層 212 :複晶矽層 實施例 請參照第2a圖至第2f圖，其中，依照本發明一較佳 實施例，在晶圓的對準線上之對準標記，所形成之STI結 構。首先，參考第2a圖，利用上述傳統之製程，在一半導 體基底100上，依序先形成一墊氧化層及一厚約1.5kA之 氮化矽層102。然後，利用光罩上光阻，定義出半導體基 底100上之主動區101及溝渠圖形。接著，利用蝕刻法去 除未被光阻層覆蓋之氮化矽層102，以曝露出部分的半導 體基底100表面，再利用氟化氫爲蝕刻劑，移除部分表面* 曝露的半導體基底100，以形成一深度約爲4kA之溝渠結 ---n I - - In --11 - - I - - I! - t ,^ml m - I...... I TJ 3 、-° (誚先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) Λ4規掊（210Χ29?公；^ ) 2773twf.doc/008 一 ΙΓ 五、發明説明（έ ) ~~ 構。在整個半導體基底100表面，形成一絕緣層1〇6，例 如，一氧化層，並將溝渠結構塡塞。 參考第2b圖，利用化學機械硏磨法，以氮化砂層1〇2 爲硏磨終止層’對絕緣層106進行平坦化，直到曝露出氮 化矽層102表面。 - 參考第2c圖’蝕刻剝除氮化砂層。再利用氟化氮 ί谷液作爲餓刻劑’以浸入（Dip)法去除塾氧化層約2〇秒。 需注意的是’在去除墊氧化層的同時，塡塞在溝渠內部的 絕緣層表面亦同時被鈾去一部分。接著，再針對對準線 (Scribe Line)上之對準標記(Alignment Mark)中所形成之淺 溝渠絕緣結構，將溝渠中所塡塞的絕緣層l〇6A部分或全 部移除。以提高此對準標記之階梯高度。結果，形成如第 2d圖所示之結構。接著，再對半導體基底丨〇〇之主動區域 1〇1，進行通道離子植入。 經濟部中央標隼局員Η消費合作枉印製 ---------，衣-- (請先閱讀背面之注意事項再填寫本頁) 然後，參考第2e圖，在整個半導體基底1〇〇上，形成 一閘氧化層210 ’再於閘氧化層210上，形成一複晶矽層 212。接著，利用傳統的微影蝕刻製程，形成所需之複晶矽 線。如以上所述，形成複晶矽線的微影蝕刻過程中，利用 對準標記來作曝光對準’在本發明中，由於對準標記上所 形成之溝渠深度，由部分或全部移除溝渠塡塞之絕緣層而 增加’因而增加了其階梯高度。使得對準的精確度增加， 而改善了產品的良率。 雖然本發明已以較佳實施例揭露如上，然其並非用以‘ 限定本發明’任何熟習此技藝者，在不脫離本發明之精神 ______ 8 本紙張尺度適用中國國家標準（CNS ) /\4坭格（210x7^^·] ' — ----- 27 73twf.doc/008 ___— 五、發明説明（’7) 和範圍內，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印繁 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210X297公犮） 9'-.. n __ m * " · "-... · 、 一 ·· ——-Round.-, J V. Description of the Invention (広) A complex crystal sand layer 112 is formed on the oxide layer 11 〇 Then, the traditional tempering and lithography process are used to define the polycrystalline silicon line. As described above, "in the lithography process of the polycrystalline silicon layer H2, the exposure alignment is performed by using the alignment mark on the alignment line." However, in this conventional process, the The height difference 'ie the step height' from the surface of the congested insulating layer 106A to the surface of the active region 101 is almost zero. Therefore, an error in exposure alignment is caused. Therefore, the main purpose of the present invention is to provide a method for improving the alignment of a semiconductor process. After the formation of the shallow trench insulation structure, 'remove the congestion insulators in some or all of the trench insulation structure according to actual needs' for alignment The step height of the alignment mark on the line is increased, thus improving the accuracy of the alignment and improving the yield of the product. Printed by Shelley Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs, I-Please read the notes on the back ^ before filling this page) To achieve the above and other purposes of the invention, 'provide a method to improve the exposure alignment of semiconductor processes First, a semiconductor substrate is provided including a field region and an alignment line, and the alignment line includes an alignment mark. A shallow trench insulation structure is formed on the field region and the alignment mark, and in the shallow trench insulation structure, an insulation layer is plugged. Remove all or part of the insulation stuck in the shallow trench insulation structure on the alignment mark. A gate oxide layer is formed on the entire surface of the semiconductor substrate, and then a polycrystalline sand layer is formed on the gate oxide layer. A polycrystalline sand layer is defined to form a polycrystalline sand line. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a detailed description is given below with a preferred embodiment 'in conjunction with the accompanying drawings' as follows: Brief description of the drawings: This paper scale Applicable to China National Standard (CNS) Λ4 specification (210X297 public office) 2773twf.doc / 008 Λ 1Γ Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (t) Figures la to li show the tradition 2a to 2e show the STI manufacturing method of the alignment mark on the alignment line in a preferred embodiment based on the present invention. Brief descriptions marked in the figure: 100: semiconductor substrate-101: active area 102: silicon nitride layer 10 4: photoresist layer 106 / 106A: insulating layer 108: channel ion implantation 110: gate oxide layer 112: polycrystalline silicon Layer 210: gate oxide layer 212: polycrystalline silicon layer For an embodiment, please refer to FIGS. 2a to 2f. In accordance with a preferred embodiment of the present invention, an alignment mark formed on an alignment line of a wafer is formed. STI structure. First, referring to FIG. 2a, using the above-mentioned conventional process, a pad oxide layer and a silicon nitride layer 102 having a thickness of about 1.5 kA are formed on a half of the semiconductor substrate 100 in this order. Then, the photoresist on the photomask is used to define the active area 101 and the trench pattern on the semiconductor substrate 100. Next, the silicon nitride layer 102 not covered by the photoresist layer is removed by an etching method to expose a part of the surface of the semiconductor substrate 100, and then hydrogen fluoride is used as an etchant to remove part of the exposed semiconductor substrate 100 to form a semiconductor substrate 100. Trench junctions with a depth of about 4kA --- n I--In --11--I--I!-T, ^ ml m-I ... I TJ 3 、-° (阅读 Read the back first Please pay attention to this page before filling in this page) This paper size applies Chinese National Standards (CNS) Λ4 Regulations (210 × 29? Public; ^) 2773twf.doc / 008 Ⅰ Γ Description of the invention (（) ~~ structure. On the entire surface of the semiconductor substrate 100, an insulating layer 106 is formed, for example, an oxide layer, and the trench structure is blocked. Referring to Fig. 2b, the insulating layer 106 is planarized by using a chemical mechanical honing method with the nitrided sand layer 102 as a honing stop layer 'until the surface of the silicon nitride layer 102 is exposed. -Refer to Figure 2c 'to remove the nitrided sand layer by etching. Nitrogen fluoride is used as a starving etcher 'to remove the samarium oxide layer by the dip method for about 20 seconds. It should be noted that while removing the pad oxide layer, the surface of the insulation layer that is plugged inside the trench is also partially removed by uranium. Next, for the shallow trench insulation structure formed in the alignment mark on the Scribe Line, the insulating layer 106A partially or completely removed in the trench is removed. To increase the step height of this alignment mark. As a result, the structure shown in Fig. 2d is formed. Next, channel active ion implantation is performed on the active area 101 of the semiconductor substrate 100. Member of the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperation, Printing ---------, Clothing-(Please read the precautions on the back before filling out this page) Then, refer to Figure 2e. On the gate oxide layer 210, a gate oxide layer 210 is formed, and then on the gate oxide layer 210, a polycrystalline silicon layer 212 is formed. Next, the conventional lithography process is used to form the required polycrystalline silicon lines. As described above, during the lithographic etching process for forming a polycrystalline silicon line, alignment marks are used for exposure alignment. In the present invention, due to the depth of the trenches formed on the alignment marks, the trenches are partially or completely removed. Congestion of the insulating layer increases, thus increasing its step height. This increases the accuracy of the alignment and improves the yield of the product. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to 'limit the present invention'. Any person skilled in the art will not deviate from the spirit of the present invention. ______ 8 This paper size applies the Chinese National Standard (CNS) / \ 4 坭 格 （210x7 ^^ ·] '— ----- 27 73twf.doc / 008 ___ — V. The description of the invention (' 7) and the scope of the invention can be modified and retouched, so the protection of the present invention The scope shall be determined by the scope of the attached patent application. (Please read the notes on the back before filling out this page.) Set the paper size of the printed papers of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs to apply Chinese National Standards (CNS) Specifications (210X297 males) 9

Claims (1)

經濟部中央標準局員工消費合作社印裝 A8 2773twt.doc/008 33 C8 D8 六、申請專利範圍 1.一種改善半導體製程對準的方法，包括： 提供一半導體基底，該半導體基底上包括一場區域及 一對準線，而該些對準線上包括了一對準標記； 形成複數個淺溝渠絕緣結構於該場區域及該對準標記 上，且每一個該些淺溝渠絕緣結構中，塡塞有一絕緣層； 以及 全部或部分去除在該對準標記上之該些淺溝渠絕緣結 構中，所塡塞的該絕緣物。 2. 如申請專利範圍第1項所^之方法，其中該絕緣物 包括一氧化層。 3. 如申請專利範圍第1項所述之¥，.其中在該些對準 標記之絕緣物被去除之後，又包括： 形成一複晶矽線於該半導體基底上。 Jy 4. 如申請專利範圍第3項所述之$，其中該複晶矽線 的形成包括： ' ' i 在整個該半導體基底表面形成一閘氧化層； 在該閘氧化層上形成一複晶矽層；以及 定義該複晶矽層，以形成該複晶矽線。 5. —種改善半導體製程曝光對準的方法，包括： 提供一半導體基底，該半導體基底上包括一場區域及 一對準線，而該對準線上包括了一對準標記； 形成複數個淺溝渠絕緣結構於該場區域及該對準標記 .. ； 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家梂準（CNS ) A4規格（2丨0〆297公釐） A8 2773twf.d〇c/008 B8 C8 D8 六、申請專利範圍 上，且每一個該些淺溝渠絕緣結構中，塡塞有一絕緣層； X· \ 全部或部分去除在該/¾¾準標記上之該些淺溝渠絕緣 ·. ，. 結構中，所塡塞的該絕緣物？:Λ 形成一複晶矽線於該半導;體基底上。 、、」 6. 如申請專利範圍第5項所述之方法，其中該絕緣物 包括一氧化層。 7. 如申請專利範圍第5項所述之方法，其中該複晶矽 線的形成，包括： 在整個該半導體基底表面形成一閘氧化層； 在該閘氧化層上形成一複晶矽層；以及 定義該複晶砂層，以形成該複晶砂線。 ----^--J---^------1T-------.ii (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 2773twt.doc / 008 33 C8 D8 VI. Patent Application Scope 1. A method for improving semiconductor process alignment, including: providing a semiconductor substrate including a field area and An alignment line, and the alignment lines include an alignment mark; forming a plurality of shallow trench insulation structures on the field area and the alignment mark, and in each of the shallow trench insulation structures, a plug is formed An insulation layer; and the insulation stuffed in the shallow trench insulation structures on the alignment mark is completely or partially removed. 2. The method as described in item 1 of the patent application, wherein the insulator includes an oxide layer. 3. As described in item 1 of the scope of patent application, wherein after the insulators of the alignment marks are removed, it further comprises: forming a polycrystalline silicon line on the semiconductor substrate. Jy 4. As described in item 3 of the scope of the patent application, wherein the formation of the polycrystalline silicon wire includes: '' i forming a gate oxide layer on the entire surface of the semiconductor substrate; forming a compound crystal on the gate oxide layer A silicon layer; and defining the polycrystalline silicon layer to form the polycrystalline silicon line. 5. A method for improving exposure alignment in a semiconductor process, including: providing a semiconductor substrate including a field region and an alignment line, and the alignment line includes an alignment mark; forming a plurality of shallow trenches Insulation structure in the field area and the alignment mark ..; gutter (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specification (2 丨 0〆297 mm) ) A8 2773twf.d〇c / 008 B8 C8 D8 6. In the scope of patent application, and in each of these shallow trench insulation structures, there is an insulation layer; X · \ Remove all or part of the / ¾¾ standard mark Which of the shallow trench insulations .., the insulation in the structure? : Λ forms a polycrystalline silicon wire on the semiconductor substrate. "..." 6. The method as described in item 5 of the scope of the patent application, wherein the insulator includes an oxide layer. 7. The method according to item 5 of the scope of patent application, wherein the forming of the polycrystalline silicon line comprises: forming a gate oxide layer on the entire surface of the semiconductor substrate; forming a polycrystalline silicon layer on the gate oxide layer; And defining the polycrystalline sand layer to form the polycrystalline sand line. ---- ^-J --- ^ ------ 1T -------. Ii (Please read the notes on the back before filling out this page) Staff Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs The printed paper size is applicable to China National Standard (CNS) A4 (210X297 mm)
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US6562691B2 (en) * 2001-03-06 2003-05-13 Macronix International Co., Ltd. Method for forming protrusive alignment-mark
JP3665275B2 (en) * 2001-05-28 2005-06-29 沖電気工業株式会社 Method for forming alignment mark
US6774452B1 (en) 2002-12-17 2004-08-10 Cypress Semiconductor Corporation Semiconductor structure having alignment marks with shallow trench isolation
US8237297B2 (en) * 2010-04-06 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for providing alignment mark for high-k metal gate process
KR102057030B1 (en) * 2013-08-09 2019-12-18 삼성전자 주식회사 Semiconductor device and method of fabricating the same

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