TW377444B - Control gate driver circuit for a non-volatile memory and memory using same - Google Patents
Control gate driver circuit for a non-volatile memory and memory using sameInfo
- Publication number
- TW377444B TW377444B TW086112145A TW86112145A TW377444B TW 377444 B TW377444 B TW 377444B TW 086112145 A TW086112145 A TW 086112145A TW 86112145 A TW86112145 A TW 86112145A TW 377444 B TW377444 B TW 377444B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- input terminal
- regulated
- memory
- charge pump
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Landscapes
- Read Only Memory (AREA)
- Dram (AREA)
Abstract
A charge pump is provided in this invention, comprising: a voltage reference generating circuit having at least one output terminal for providing a corresponding reference voltage; (1) a first regulated voltage doubling charge pump stage having a voltage input terminal connected to a power supply voltage terminal, a reference input terminal coupled to said voltage reference generating circuit for receiving a first reference voltage, and a voltage output terminal for providing a first regulated voltage; and a first capacitor used to double a voltage at said voltage input terminal to provide said first regulated voltage; and (2) a second regulated voltage doubling charge pump stage having a voltage input terminal connected to said voltage output terminal of said first regulated voltage doubling charge pump stage, a reference input terminal coupled to said voltage reference generating circuit for receiving a second reference voltage, and an output terminal for providing a second regulated voltage, and having a second capacitor used to double a voltage at said voltage input terminal to provide said first regulated voltage; where the said first capacitor is formed using a thinner oxide than said second capacitor, thereby saving circuit area.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/703,174 US5721704A (en) | 1996-08-23 | 1996-08-23 | Control gate driver circuit for a non-volatile memory and memory using same |
US08/703,173 US5740109A (en) | 1996-08-23 | 1996-08-23 | Non-linear charge pump |
Publications (1)
Publication Number | Publication Date |
---|---|
TW377444B true TW377444B (en) | 1999-12-21 |
Family
ID=27107089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086112145A TW377444B (en) | 1996-08-23 | 1997-08-23 | Control gate driver circuit for a non-volatile memory and memory using same |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3827418B2 (en) |
KR (1) | KR100518096B1 (en) |
TW (1) | TW377444B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI737535B (en) * | 2020-11-06 | 2021-08-21 | 力晶積成電子製造股份有限公司 | Semiconductor device and manufacturing method of the same |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7548484B2 (en) | 2005-09-29 | 2009-06-16 | Hynix Semiconductor Inc. | Semiconductor memory device having column decoder |
KR100727441B1 (en) * | 2005-09-29 | 2007-06-13 | 주식회사 하이닉스반도체 | Column decoder |
KR102076991B1 (en) * | 2012-12-28 | 2020-02-13 | 주식회사 실리콘웍스 | Charge pump apparatus |
-
1997
- 1997-08-19 JP JP23775697A patent/JP3827418B2/en not_active Expired - Fee Related
- 1997-08-22 KR KR1019970040116A patent/KR100518096B1/en not_active IP Right Cessation
- 1997-08-23 TW TW086112145A patent/TW377444B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI737535B (en) * | 2020-11-06 | 2021-08-21 | 力晶積成電子製造股份有限公司 | Semiconductor device and manufacturing method of the same |
Also Published As
Publication number | Publication date |
---|---|
JPH1083692A (en) | 1998-03-31 |
KR100518096B1 (en) | 2005-12-06 |
JP3827418B2 (en) | 2006-09-27 |
KR19980018899A (en) | 1998-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |