TW375809B - Method to produce a conductive connection between at least two areas of a first conductive type - Google Patents

Method to produce a conductive connection between at least two areas of a first conductive type

Info

Publication number
TW375809B
TW375809B TW087104534A TW87104534A TW375809B TW 375809 B TW375809 B TW 375809B TW 087104534 A TW087104534 A TW 087104534A TW 87104534 A TW87104534 A TW 87104534A TW 375809 B TW375809 B TW 375809B
Authority
TW
Taiwan
Prior art keywords
areas
conductive
produce
conductive connection
conductive type
Prior art date
Application number
TW087104534A
Other languages
English (en)
Inventor
Lars-Peter Heineck
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW375809B publication Critical patent/TW375809B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
TW087104534A 1997-04-04 1998-03-26 Method to produce a conductive connection between at least two areas of a first conductive type TW375809B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19713961A DE19713961C2 (de) 1997-04-04 1997-04-04 Verfahren zur Erzeugung einer leitenden Verbindung zwischen zumindest zwei Gebieten eines ersten Leitfähigkeitstyps

Publications (1)

Publication Number Publication Date
TW375809B true TW375809B (en) 1999-12-01

Family

ID=7825459

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087104534A TW375809B (en) 1997-04-04 1998-03-26 Method to produce a conductive connection between at least two areas of a first conductive type

Country Status (6)

Country Link
US (1) US5998254A (zh)
EP (1) EP0869551B1 (zh)
JP (1) JPH1145886A (zh)
KR (1) KR19980081061A (zh)
DE (1) DE19713961C2 (zh)
TW (1) TW375809B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000307084A (ja) 1999-04-23 2000-11-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
KR100632575B1 (ko) * 2000-06-22 2006-10-09 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
US6369419B1 (en) * 2000-06-23 2002-04-09 International Business Machines Corporation Self-aligned near surface strap for high density trench DRAMS
JP2006093635A (ja) * 2004-09-27 2006-04-06 Toshiba Corp 半導体装置およびその製造方法
US20090088530A1 (en) * 2007-09-28 2009-04-02 Bodiford Billy Ray Novel polymer compound and uses thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833094A (en) * 1986-10-17 1989-05-23 International Business Machines Corporation Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
US5185294A (en) * 1991-11-22 1993-02-09 International Business Machines Corporation Boron out-diffused surface strap process
US5545581A (en) * 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
US6252267B1 (en) * 1994-12-28 2001-06-26 International Business Machines Corporation Five square folded-bitline DRAM cell
US5677219A (en) * 1994-12-29 1997-10-14 Siemens Aktiengesellschaft Process for fabricating a DRAM trench capacitor
EP0821409A3 (en) * 1996-07-23 2004-09-08 International Business Machines Corporation Collar etch method for DRAM cell

Also Published As

Publication number Publication date
DE19713961C2 (de) 1999-05-06
EP0869551A2 (de) 1998-10-07
EP0869551B1 (de) 2002-01-02
US5998254A (en) 1999-12-07
JPH1145886A (ja) 1999-02-16
EP0869551A3 (de) 1999-07-21
KR19980081061A (ko) 1998-11-25
DE19713961A1 (de) 1998-10-08

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees