TW374177B - High speed semiconductor memory device - Google Patents

High speed semiconductor memory device

Info

Publication number
TW374177B
TW374177B TW087106889A TW87106889A TW374177B TW 374177 B TW374177 B TW 374177B TW 087106889 A TW087106889 A TW 087106889A TW 87106889 A TW87106889 A TW 87106889A TW 374177 B TW374177 B TW 374177B
Authority
TW
Taiwan
Prior art keywords
memory device
high speed
semiconductor memory
writing
speed semiconductor
Prior art date
Application number
TW087106889A
Other languages
English (en)
Inventor
Kook-Hwan Kwon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW374177B publication Critical patent/TW374177B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
TW087106889A 1997-05-24 1998-05-05 High speed semiconductor memory device TW374177B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970020508A KR100268430B1 (ko) 1997-05-24 1997-05-24 반도체메모리장치

Publications (1)

Publication Number Publication Date
TW374177B true TW374177B (en) 1999-11-11

Family

ID=19506997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087106889A TW374177B (en) 1997-05-24 1998-05-05 High speed semiconductor memory device

Country Status (4)

Country Link
US (1) US6067264A (zh)
JP (1) JPH10334667A (zh)
KR (1) KR100268430B1 (zh)
TW (1) TW374177B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000030436A (ja) * 1998-07-09 2000-01-28 Fujitsu Ltd 半導体装置
US6226220B1 (en) * 1999-09-16 2001-05-01 Nec Corporation Semiconductor memory device
US6252819B1 (en) * 2000-05-01 2001-06-26 Sandcraft, Inc. Reduced line select decoder for a memory array
US6909639B2 (en) * 2003-04-22 2005-06-21 Nexflash Technologies, Inc. Nonvolatile memory having bit line discharge, and method of operation thereof
US7095255B2 (en) * 2004-06-29 2006-08-22 Intel Corporation Ultra-drowsy circuit
KR101799482B1 (ko) * 2010-12-29 2017-11-20 삼성전자주식회사 기입 어시스트 회로를 포함하는 정적 메모리 장치
US9230637B1 (en) * 2014-09-09 2016-01-05 Globalfoundries Inc. SRAM circuit with increased write margin
US10255967B1 (en) * 2017-11-28 2019-04-09 Micron Technology, Inc. Power reduction technique during write bursts
KR20210005425A (ko) 2019-07-05 2021-01-14 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 라이트 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510584A (en) * 1982-12-29 1985-04-09 Mostek Corporation MOS Random access memory cell with nonvolatile storage
JPS60151898A (ja) * 1984-01-18 1985-08-09 Nec Corp 不揮発性ランダムアクセスメモリセル
JPS62102499A (ja) * 1985-10-28 1987-05-12 Nec Corp メモリ回路
US5761123A (en) * 1995-06-13 1998-06-02 Samsung Electronics, Co., Ltd. Sense amplifier circuit of a nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JPH10334667A (ja) 1998-12-18
KR100268430B1 (ko) 2000-11-01
US6067264A (en) 2000-05-23
KR19980084662A (ko) 1998-12-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees