TW370707B - Method for forming planarized trench isolation structure - Google Patents

Method for forming planarized trench isolation structure

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Publication number
TW370707B
TW370707B TW087109355A TW87109355A TW370707B TW 370707 B TW370707 B TW 370707B TW 087109355 A TW087109355 A TW 087109355A TW 87109355 A TW87109355 A TW 87109355A TW 370707 B TW370707 B TW 370707B
Authority
TW
Taiwan
Prior art keywords
layer
forming
substrate material
insulation layer
stack
Prior art date
Application number
TW087109355A
Other languages
Chinese (zh)
Inventor
Shye-Lin Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087109355A priority Critical patent/TW370707B/en
Application granted granted Critical
Publication of TW370707B publication Critical patent/TW370707B/en

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Abstract

The method of the present invention includes following procedures: first of all, forming a liner layer on a substrate material; and forming a first stack layer on the liner layer; then forming a second stack layer on the first stack layer; and defining an opening extending to the substrate material; then removing part of the substrate material to form an upper-part trench using the second stack layer as a mask; and forming a side-wall structure on the side-wall of the opening; removing part of the substrate material to form a lower-part trench using the side-wall structure as a mask; then removing the side-wall structure and the second stack layer; and forming a first insulation layer on the surface inside the trench; forming a second insulation layer on the first insulation layer and the first stack layer; and forming a semiconductor layer on the second insulation layer; then oxidizing part of the semiconductor layer to form a third insulation layer; and forming a capping layer on the third insulation layer; last of all, performing a planarization process for the substrate material, thus obtaining a planarized deep-shallow trench isolation structure.
TW087109355A 1998-06-12 1998-06-12 Method for forming planarized trench isolation structure TW370707B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087109355A TW370707B (en) 1998-06-12 1998-06-12 Method for forming planarized trench isolation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087109355A TW370707B (en) 1998-06-12 1998-06-12 Method for forming planarized trench isolation structure

Publications (1)

Publication Number Publication Date
TW370707B true TW370707B (en) 1999-09-21

Family

ID=57941512

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087109355A TW370707B (en) 1998-06-12 1998-06-12 Method for forming planarized trench isolation structure

Country Status (1)

Country Link
TW (1) TW370707B (en)

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