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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A kind of manufacturing method for barrier which is first providing a silicon substrate with via; then, forming a titanium layer at the bottom and perimeter of the via and forming a titanium oxide layer on the titanium layer; applying nitrogen ion doping on the titanium layer; lastly, proceeding a thermal annealing process so as to convert part of the titanium layer doped with nitrogen ion to titanium nitride layer; the titanium nitride layer and the previously formed titanium nitride layer and the titanium layer to constitute the barrier layer.
TW085115911A1996-12-231996-12-23Manufacturing method for barrier
TW368729B
(en)
A method for introducing an impurity dopant into SiC, a semiconductor device formed by the method and using a highly doped amorphous layer as a source for dopant diffusion into SiC