TW365029B - Dry processing gas - Google Patents

Dry processing gas

Info

Publication number
TW365029B
TW365029B TW085111457A TW85111457A TW365029B TW 365029 B TW365029 B TW 365029B TW 085111457 A TW085111457 A TW 085111457A TW 85111457 A TW85111457 A TW 85111457A TW 365029 B TW365029 B TW 365029B
Authority
TW
Taiwan
Prior art keywords
gas
etching process
dry
processing gas
dry processing
Prior art date
Application number
TW085111457A
Other languages
Chinese (zh)
Inventor
Akira Iwamori
Shohei Nozaki
Shin Fukuda
Yasutoshi Nakajima
Nobuhiro Fukuda
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Application granted granted Critical
Publication of TW365029B publication Critical patent/TW365029B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Abstract

The invention provides a dry processing gas which has the CF3I elements. The gas can be used for high speed anisotropic dry etching process on conductive oxide, such as ITO. And, the gas can be used for dry-cleaning process for those contaminated apparatus by the dry etching process or vacuum evaporative plating method. The invention also prevents the bottom etching which happened in the wet-etching process and achieves the high speed etching process which is impossible by the system with reduction gas additive in the HI gas.
TW085111457A 1995-09-28 1996-09-19 Dry processing gas TW365029B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25117995 1995-09-28
JP18725996 1996-07-17

Publications (1)

Publication Number Publication Date
TW365029B true TW365029B (en) 1999-07-21

Family

ID=26504245

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111457A TW365029B (en) 1995-09-28 1996-09-19 Dry processing gas

Country Status (4)

Country Link
KR (1) KR100376233B1 (en)
CN (1) CN1157860A (en)
SG (1) SG63666A1 (en)
TW (1) TW365029B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180093798A (en) * 2017-02-13 2018-08-22 램 리써치 코포레이션 Method to create air gaps
KR102392968B1 (en) 2019-03-28 2022-05-03 한양대학교 산학협력단 Chamber cleaning method using plasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123142A (en) * 1984-11-20 1986-06-11 Matsushita Electric Ind Co Ltd Dry etching method
DE3717358A1 (en) * 1987-05-22 1988-12-08 Kali Chemie Ag METHOD FOR PRODUCING CF (DOWN ARROW) 3 (DOWN ARROW) I
TW224492B (en) * 1991-12-13 1994-06-01 Tokyo Electron Co Ltd

Also Published As

Publication number Publication date
KR100376233B1 (en) 2003-06-12
CN1157860A (en) 1997-08-27
KR970018175A (en) 1997-04-30
SG63666A1 (en) 1999-03-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees