Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec CorpfiledCriticalNec Corp
Application grantedgrantedCritical
Publication of TW359012BpublicationCriticalpatent/TW359012B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
Method of making a semiconductor device, including the following steps: forming an electrode on the first conductive substrate; passing the second conductive first dopant through the electrode and into the substrate, for making the first well having the second conductivity, having the first well the entire lower part of the electrode; and having the electrode as mask, for feeding of the second dopant of the third conduction into the first substrate, for making the second well in the first well.
TW086105033A1996-04-251997-04-18Method of making a semiconductor device having complementary metal oxide semiconductor (CMOS) transistors
TW359012B
(en)