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Application filed by United Microelctronics CorpfiledCriticalUnited Microelctronics Corp
Priority to TW085108917ApriorityCriticalpatent/TW352475B/en
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Publication of TW352475BpublicationCriticalpatent/TW352475B/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Electrodes Of Semiconductors
(AREA)
Abstract
A method for manufacturing field effect transistor gate electrode and link includes: to form a field oxide layer on the surface of the silicon semiconductor transistor as to isolate the field effect transistor; to create a gate oxide layer; to form the polysilicon, metallic silicon and non-grain silicon; using photolithography and etching to etch the polysilicon and metallic silicon to form "polysilicon/metallic silicon/non-grain silicon" laminate structure; a formation of polysilicon/metallic silicon/non-grain silicon" laminate structure.
TW085108917A1996-07-221996-07-22A method to prevent peeling from polysilicon/tungsten silicide structure
TW352475B
(en)